CN114381686A

CN114381686A - Vapor deposition mask unit and method for manufacturing same

Info

Publication number: CN114381686A
Application number: CN202111177130.9A
Authority: CN
Inventors: 松本优子
Original assignee: Japan Display Inc
Current assignee: Japan Display Inc
Priority date: 2020-10-20
Filing date: 2021-10-09
Publication date: 2022-04-22
Also published as: KR20220052271A; JP2022067159A

Abstract

The invention provides a vapor deposition mask unit and a method for manufacturing the same, and aims to provide a vapor deposition mask unit provided with a plurality of precisely arranged openings and a method for manufacturing the same. The vapor deposition mask unit includes a 1 st metal layer, a 2 nd metal layer, and a frame on the 1 st metal layer. The 1 st metal layer has a plurality of 1 st openings. The 2 nd metal layer is positioned on the 1 st metal layer, is in contact with the 1 st metal layer and is provided with a plurality of 2 nd openings. The frame is located on the 1 st metal layer. A portion of the frame extends in a region between two adjacent 1 st openings and between two adjacent 2 nd openings, overlapping the 1 st metal layer in the region. At least one of the plurality of 1 st openings overlaps one of the plurality of 2 nd openings.

Description

Vapor deposition mask unit and method for manufacturing same

Technical Field

One embodiment of the present invention relates to a vapor deposition mask unit and a method for manufacturing the same.

Background

A semiconductor element such as a display element or a memory element is a structure in which thin films made of various materials such as an insulator, a semiconductor, and a conductor are stacked on an insulating substrate or a semiconductor substrate, and these thin films are appropriately patterned and connected to each other to develop a function as a semiconductor element. As one of the methods for forming a thin film, a vacuum deposition method can be mentioned. In this method, a material is heated under high vacuum to sublimate or evaporate the material (hereinafter, sublimation and evaporation are collectively referred to as vaporization) to generate vapor of the material. In this case, a vapor deposition mask is used to selectively deposit a material in a region where a thin film is formed (hereinafter, referred to as a vapor deposition region). The vapor deposition mask has a plurality of openings through which the vapor of the material passes, and vapor deposition is performed in a state in which the openings overlap with the vapor deposition region, whereby the vapor of the material can be selectively cured and deposited in the vapor deposition region (see patent document 1).

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open publication No. 2017-210633

Disclosure of Invention

Problems to be solved by the invention

An object of one embodiment of the present invention is to provide a vapor deposition mask unit and a method for manufacturing the same. For example, an object of one embodiment of the present invention is to provide a vapor deposition mask unit provided with a plurality of precisely arranged openings, and a method for manufacturing the same.

Means for solving the problems

One embodiment of the present invention is a vapor deposition mask unit. The vapor deposition mask unit includes a 1 st metal layer, a 2 nd metal layer, and a frame on the 1 st metal layer. The 1 st metal layer has a plurality of 1 st openings. The 2 nd metal layer is positioned on the 1 st metal layer, is in contact with the 1 st metal layer and is provided with a plurality of 2 nd openings. The frame is located on the 1 st metal layer. A portion of the frame extends in a region between two adjacent 1 st openings and between two adjacent 2 nd openings, overlapping the 1 st metal layer in the region. At least one of the plurality of 1 st openings overlaps one of the plurality of 2 nd openings.

One embodiment of the present invention is a method for manufacturing a vapor deposition mask unit. The manufacturing method comprises the following steps: a step of forming a 1 st metal layer on a support substrate; a step of disposing a frame on the 1 st metal layer; a step of forming a 2 nd metal layer having a plurality of 2 nd openings on the 1 st metal layer; a step of peeling the support substrate from the 1 st metal layer; and a step of forming a plurality of 1 st openings in the 1 st metal layer by irradiating the 1 st metal layer with laser light from the side opposite to the 2 nd metal layer. The plurality of 1 st openings are formed such that at least one of the plurality of 1 st openings overlaps one of the plurality of 2 nd openings.

Drawings

Fig. 1A is a schematic top view of a vapor deposition device to which a vapor deposition mask unit according to an embodiment of the present invention can be applied.

Fig. 1B is a schematic side view of a vapor deposition device to which a vapor deposition mask unit according to an embodiment of the present invention can be applied.

Fig. 2 is a schematic top view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 3 is a schematic top view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 4A is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 4B is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 5A is a schematic top view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 5B is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 5C is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 6A is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 6B is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 7A is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 7B is a schematic cross-sectional view of a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 8A is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 8B is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 8C is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 9A is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 9B is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 9C is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 9D is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 10A is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 10B is a schematic cross-sectional view illustrating a method of manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 10C is a schematic cross-sectional view illustrating a method of manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 11A is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 11B is a schematic cross-sectional view illustrating a method of manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 11C is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 11D is a schematic cross-sectional view illustrating a method of manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 12A is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Fig. 12B is a schematic cross-sectional view illustrating a method of manufacturing a vapor deposition mask unit according to an embodiment of the present invention.

Description of the reference numerals

100: vapor deposition mask unit

110: vapor deposition mask

112: 1 st metal layer

112 a: opening No. 1

113: step difference

114: 2 nd metal layer

114 a: opening No. 2

120: frame structure

120 a: outer frame

120 b: inner frame

122: adhesive layer

130: peeling layer

140: supporting substrate

142: resist mask

144: magnet

150: evaporation chamber

152: load lock door

154: evaporation source

156: shield plate

158: moving mechanism

160: holding member

170: substrate

Detailed Description

Embodiments of the present invention will be described below with reference to the drawings and the like. However, the present invention can be carried out in various ways without departing from the scope of the present invention, and should not be construed as being limited to the description of the embodiments illustrated below.

The drawings are for clarity of explanation, and therefore, the width, thickness, shape, and the like of each part may be schematically shown as compared with the actual embodiment. In the present specification and the drawings, the same reference numerals are given to elements having the same functions as those described with reference to the illustrated drawings, and redundant description is omitted.

In the present specification and claims, when it is expressed that another structure is disposed on one structure, the case where only "… … is referred to includes both the case where another structure is disposed directly above one structure so as to be in contact with the one structure and the case where another structure is disposed above the one structure with another structure interposed therebetween, unless otherwise specified.

Hereinafter, the expression "one structure is exposed from another structure" means that a part of one structure is not covered with another structure, and includes a case where a part not covered with the other structure is covered with another structure.

A vapor deposition mask unit 100 according to an embodiment of the present invention and a method for manufacturing the same will be described below.

1. Evaporation plating device

The vapor deposition mask unit 100 can be used to selectively form a film in a vapor deposition region when forming a film of a metal, an organic compound, an inorganic compound, or a mixture thereof by a vapor deposition method. Fig. 1A and 1B show schematic top and side views of a typical vapor deposition device used in forming a film by vapor deposition. The vapor deposition device is composed of a plurality of chambers having various functions. One chamber is a vapor deposition chamber 150 shown in fig. 1A, and the vapor deposition chamber 150 is partitioned from the adjacent chambers by a load lock door 152 and configured to maintain a state in which the inside is depressurized in a high vacuum or filled with an inert gas such as nitrogen or argon. Therefore, a decompression device, a gas suction/discharge mechanism, and the like, which are not shown, are connected to the vapor deposition chamber 150.

The vapor deposition chamber 150 provides a space capable of accommodating a film formation object such as a substrate. In the example shown in fig. 1A and 1B, the vapor deposition source 154 is disposed below the substrate 170, and the vapor deposition source 154 is filled with a vapor deposition material. The material is heated and vaporized by the vapor deposition source 154, and when vapor of the material reaches the surface of the substrate 170 through an opening (described later) of the vapor deposition mask unit 100, the vapor is cooled and solidified, and the material is deposited to form a film of the material on the substrate 170 (on the lower surface of the substrate 170 in fig. 1B). In the example shown in fig. 1A, the vapor deposition source 154 (also referred to as a line source) having a substantially linear shape and arranged along one side of the substrate 170 is provided, but the vapor deposition source 154 may have any shape, and may be a vapor deposition source 154 called a point source so as to overlap the center of gravity of the substrate 170. In the case of a point source, the substrate 170 and the evaporation source 154 may be fixed in position relative to each other, or a mechanism for rotating the substrate 170 may be provided.

When the vapor deposition source 154 of the line source type is used, the vapor deposition chamber 150 is configured such that the substrate 170 and the vapor deposition source 154 are moved relatively. In fig. 1A, an example is illustrated in which the evaporation source 154 is fixed and the substrate 170 is moved thereon. As shown in fig. 1B, the vapor deposition chamber 150 is further provided with a holder 160 for holding the substrate 170 and the vapor deposition mask unit 100, a moving mechanism 158 for moving the holder 160, a shutter 156, and the like. The positional relationship between the substrate 170 and the vapor deposition mask unit 100 can be maintained by the holder 160, and the substrate 170 and the vapor deposition mask unit 100 can be moved on the vapor deposition source 154 by the moving mechanism 158. The shutter 156 is provided on the vapor deposition source 154 to shield or allow the vapor of the material to reach the substrate 170, and is controlled to open and close by a control device, not shown. Although not shown, the vapor deposition chamber 150 is provided with a sensor for monitoring the vapor deposition rate of the material, a shield plate for preventing contamination of the material, a pressure gauge for monitoring the pressure in the vapor deposition chamber 150, and the like.

2. Vapor deposition mask unit

Fig. 2 is a schematic top view of the vapor deposition mask unit 100, fig. 3 is an enlarged view of a part of fig. 2, and fig. 4A and 4B are schematic cross-sectional views taken along a chain line a-a 'in fig. 2 and a chain line B-B' in fig. 3. As shown in these drawings, the vapor deposition mask unit 100 includes, as a basic structure, a vapor deposition mask 110 and a frame 120 provided on the vapor deposition mask 110. The vapor deposition mask 110 includes a 1 st metal layer 112 and a 2 nd metal layer 114 (fig. 4A and 4B) located on the 1 st metal layer 112 and contacting the 1 st metal layer 112.

2-1, metal layer 1

The 1 st metal layer 112 has a plurality of openings (hereinafter, referred to as 1 st openings) 112 a. The 1 st opening 112a is an opening that determines a vapor deposition region, and a material passing through the 1 st opening 112a is cured and deposited on a film formation object such as a substrate, thereby forming a thin film of the material. The thickness of the 1 st metal layer 112 is appropriately selected from the range of, for example, 0.5 μm to 10 μm, 1 μm to 5 μm, or 1 μm to 3 μm. The 1 st metal layer 112 contains a metal selected from nickel and zero-valent metals such as iron, cobalt, copper, titanium, and chromium, or an alloy containing at least one of these metals. The 1 st metal layer 112 may further contain carbon. The 1 st metal layer 112 may have a single-layer structure or may be formed of a plurality of layers including different materials. For example, the 1 st metal layer 112 may have a laminated structure of a layer containing titanium and a layer containing nickel.

2-2. 2 nd metal layer

The 2 nd metal layer 114 also has a plurality of openings (hereinafter, referred to as 2 nd openings) 114 a. In the example shown in fig. 3 to 4B, one 1 st opening 112a is provided for one 2 nd opening 114a, and the 1 st opening 112a and the 2 nd opening 114a are arranged so that the one 1 st opening 112a and the one 2 nd opening 114a overlap with each other. The area of the 1 st opening 112a may be smaller than the area of the 2 nd opening 114a, and the area of each of the 1 st openings 112a may be smaller than the area of any of the 2 nd openings 114 a. Thus, a 2 nd opening 114a surrounds at least one or all of the sides that make up a 1 st opening 112 a. In other words, the 1 st opening 112a entirely overlaps the 2 nd opening 114 a. Therefore, a part of the 1 st metal layer 112 is exposed from the 2 nd opening 114a, and a step 113 is present between the 1 st metal layer 112 and the 2 nd metal layer 114 (fig. 4B).

The number of the 1 st openings 112a and the 2 nd openings 114a is not necessarily the same, and may be larger than the former. For example, as shown in a schematic top view of the vapor deposition mask unit 100 shown in fig. 5A and schematic cross-sectional views (fig. 5B and 5C) along the dashed lines C-C 'and D-D' in fig. 5A, a plurality of 1 st openings 112a may be provided for one 2 nd opening 114a, and the 1 st opening 112a and the 2 nd opening 114a may be arranged such that the one 2 nd opening 114a overlaps the plurality of 1 st openings 112 a. The number of the 1 st openings 112a overlapping with one 2 nd opening 114a may be 2 or 4 or more.

The thickness of the 2 nd metal layer 114 may be the same as or greater than that of the 1 st metal layer 112, and may be appropriately selected from the range of, for example, 5 μm to 200 μm, 5 μm to 100 μm, or 10 μm to 100 μm. By forming the 2 nd metal layer 114 to have a thickness much larger than that of the 1 st metal layer 112, warpage of the 1 st metal layer 112 and a change in the position of the 1 st opening 112a due to the warpage can be prevented, and the 1 st opening 112a can be disposed more precisely in the vapor deposition region. The 2 nd metal layer 114 may also contain a metal selected from nickel, zero-valent metals such as iron, cobalt, copper, titanium, and chromium, or an alloy containing at least one of these metals, and may further contain carbon. The composition of metal level 1 layer 112 and metal level 2 layer 114 may be the same or different.

2-3. frame

As shown in fig. 4A and 4B, the frame 120 is provided so as to be in contact with the 2 nd metal layer 114, and thereby the vapor deposition mask 110 is fixed to the frame 120. The frame 120 has a function of providing strength for preventing the vapor deposition mask 110 from being deformed, and the frame 120 maintains the shape of the vapor deposition mask 110, thereby preventing the vapor deposition mask 110 from being warped and preventing the position of the 1 st opening 112a and the 2 nd opening 114a from being changed due to the warping. This allows the 1 st opening 112a and the 2 nd opening 114a to be precisely arranged so as to overlap the vapor deposition region. The frame 120 also contains a zero valent metal as the metal selected from the group consisting of nickel, iron, cobalt, chromium, manganese, and the like. For example, the frame 120 may be an alloy containing iron and chromium, an alloy containing iron, nickel, and manganese, or an alloy containing carbon. The thickness of the frame 120 may be larger than the 1 st metal layer 112 and the 2 nd metal layer 114, and may be appropriately selected from a range of 0.5mm to 1cm or less, or 1mm to 5mm or less, for example.

As shown in fig. 2, the frame 120 includes an outer frame 120a surrounding all of the 1 st opening 112a and the 2 nd opening 114 a. The outer frame 120a is disposed along the outer periphery of the vapor deposition mask 110 (fig. 4A).

The frame 120 may include an inner frame 120b (see fig. 2) integrated with the outer frame 120a as an arbitrary structure. The inner frame 120B as a part of the frame 120 is provided in such a manner as to extend in the regions between the adjacent 1 st openings 112a and between the adjacent 2 nd openings 114a (fig. 4B). The inner frame 120b is surrounded by the outer frame 120a, and divides the region surrounded by the outer frame 120a into a plurality of regions (windows). With this structure, the strength of the outer frame 120a is increased, which contributes to prevention of deformation of the vapor deposition mask unit 100. In the case of vapor deposition on a large substrate, the length of one side of the outer frame 120a may exceed 3 m. Therefore, the arrangement of the inner frame 120b can effectively prevent the vapor deposition mask unit 100 from warping, and the 1 st opening 112a and the 2 nd opening 114a can be precisely arranged in the vapor deposition region on the large-sized substrate.

As shown in fig. 4A and 4B, the frame 120 may be provided so as to overlap with the 1 st metal layer 112 and the 2 nd metal layer 114. That is, the frame 120 may be disposed such that the 2 nd metal layer 114 is sandwiched between the 1 st metal layer 112 and the frame 120. In this case, the entire bottom surface of the inner frame 120b may overlap the 1 st metal layer 112 and the 2 nd metal layer 114.

Alternatively, as shown in fig. 6A and 6B, the frame 120 may be connected to the 1 st metal layer 112. In this case, the frame 120 may be disposed so that the entire bottom surface of the inner frame 120b overlaps the 1 st metal layer 112. The 2 nd metal layer 114 is provided so as to contact the upper surface of the 1 st metal layer 112 and the side surface of the frame 120. In other words, the bottom surface and the side surface of the frame 120 are respectively in contact with the 1 st metal layer 112 and the 2 nd metal layer 114.

Alternatively, as shown in fig. 7A and 7B, an adhesive layer 122 may be provided between the frame 120 and the 1 st metal layer 112 so as to be in contact therewith. The adhesive layer 122 may contain, for example, a photocurable or thermosetting acrylic adhesive, an epoxy adhesive, or the like. In this case, the frame 120 may be disposed so that the entire bottom surface of the inner frame 120b overlaps the 1 st metal layer 112. The 2 nd metal layer 114 is provided so as to contact the upper surface of the 1 st metal layer 112 and the side surface of the frame 120. The side surface of the adhesive layer 122 may be in contact with the 2 nd metal layer 114, so that the adhesive layer 122 is sealed by the 1 st metal layer 112, the 2 nd metal layer 114, and the frame 120, and the adhesive layer 122 is not exposed to the outside. The adhesive layer 122 is sealed, and it is possible to prevent the adhesive layer 122 from being swollen by a cleaning liquid such as an organic solvent or water when the vapor deposition mask unit 100 is cleaned by the cleaning liquid, and thus, the volume change and the decrease in the adhesive force due to the swelling can be prevented. Therefore, the shape of the vapor deposition mask unit 100 and the arrangement of the 1 st opening 112a and the 2 nd opening 114a can be prevented from changing. In addition, since the adhesive layer 122 can be prevented from dissolving, contamination of the vapor deposition mask unit 100 can be prevented.

When vapor deposition is performed using the vapor deposition mask unit 100, the vapor deposition mask unit 100 and a film formation target are arranged so that the vapor deposition region overlaps the 1 st opening 112 a. The vapor deposition mask unit 100 is arranged such that the 1 st metal layer 112 is closer to a film formation target than the 2 nd metal layer 114. The vapor of the material sequentially passes through the 2 nd opening 114a and the 1 st opening 112a, and the material is deposited on the evaporation region. When deposition is performed on each of a plurality of pixels provided in a display region of a display device by evaporation, the vapor deposition mask unit 100 is disposed so that a plurality of 1 st openings 112a overlap with pixel electrodes of the display device. As described later, the 1 st opening 112a of the vapor deposition mask 110 can be precisely provided at a position corresponding to a target vapor deposition region. Therefore, even when a plurality of vapor deposition regions are arranged at very small intervals, film formation can be selectively performed on the vapor deposition regions. This contributes to an improvement in the production yield of electronic devices produced by a vapor deposition process such as an organic electroluminescence display device, and can reduce the production cost of the electronic devices.

3. Method for manufacturing vapor deposition mask unit

An example of a method for manufacturing the vapor deposition mask unit 100 will be described with reference to fig. 8A to 12B. These drawings are schematic cross-sectional views of the vapor deposition mask unit 100, and correspond to fig. 4B.

3-1 formation of vapor deposition mask

First, the 1 st metal layer 112 is formed on the insulating support substrate 140 (fig. 8A). Examples of the insulating support substrate 140 include a glass substrate, a quartz substrate, a plastic substrate made of polyimide, polyamide, polycarbonate, or polyester fibers such as polyethylene terephthalate. A material having high transmittance to laser light described later is preferably used. The 1 st metal layer 112 is formed on the entire surface or substantially the entire surface of the support substrate 140 by a sputtering method, a Chemical Vapor Deposition (CVD) method, a plating method (electrolytic plating method, electroless plating method), or the like without forming a resist mask on the support substrate 140. When the electrolytic plating method is used, a seed layer containing a metal such as titanium, nickel, chromium, copper, or gold, or an alloy thereof may be formed by a sputtering method or a CVD method, and then the 1 st metal layer 112 may be formed by supplying electricity to the seed layer in a plating solution. As the plating solution, an aqueous electrolyte solution containing a nickel salt such as nickel sulfate or nickel chloride can be used.

Thereafter, a 2 nd metal layer 114 is formed. One example of the method for forming the 2 nd metal layer 114 includes a step of forming a resist mask 142 in a region (non-opening portion) other than the region where the 2 nd opening 114a is formed (fig. 8B), then supplying power to the 1 st metal layer 112 in a plating solution, and growing the 2 nd metal layer 114 by an electrolytic plating method (fig. 8C). The resist mask 142 may be formed by applying a photosensitive resist by ordinary photolithography, and by performing curing and development through exposure to a photomask. The resist mask 142 is exposed through a photomask, for example, by applying a negative resist to the 1 st metal layer 112 and selectively exposing the region where the 2 nd opening 114a is formed. Alternatively, the peeling layer 130 is coated with a positive resist, and exposure is performed through a photomask so that the non-opening portions are selectively exposed. After that, development is performed to obtain a patterned resist mask 142. The resist may be a liquid or a film-like photoresist called a resist film. In addition, the thickness of the resist mask 142 is preferably larger than the thickness of the 2 nd metal layer 114.

After the growth of the 2 nd metal layer 114 is completed, the resist mask 142 is removed by etching or/and ashing using a stripping liquid. Thereby, the 2 nd metal layer 114 having a plurality of 2 nd openings 114a is formed (fig. 8C). Although not shown, a metal layer without a pattern may be formed on metal layer 1 112 by sputtering, CVD, or the like, and patterned by photolithography to form metal layer 2 114.

3-2. configuration and fixation of the frame

Thereafter, as shown in fig. 9A, the frame 120 is disposed. The frame 120 is disposed so as to contact the 2 nd metal layer 114 and so as to extend from the region between the adjacent 2 nd openings 114a with the inner frame 120 b. Then, the support substrate 140 side irradiates the 1 st metal layer 112 with laser light (see an arrow in fig. 9A). Specifically, the region where the inner frame 120b overlaps the 1 st metal layer 112 is irradiated with laser light through the support substrate 140. The type of laser light is not limited, and laser light oscillated from a laser such as a YAG laser, a fiber laser, a semiconductor laser, a carbon dioxide laser, a helium-neon laser, an excimer laser, or an argon laser can be used. The beam shape of the laser beam is not limited, and may have a two-dimensional shape such as a dot shape, a linear shape, or a circle or a quadrangle. The 2 nd metal layer 114 and the frame 120 are welded (laser welded) by heat applied by the laser, and are fixed to each other.

Next, the support substrate 140 is peeled off from the 1 st metal layer 112 (fig. 9B). The support substrate 140 may be peeled off physically or chemically. In the latter case, a glass substrate may be used as the supporting substrate 140, a resist such as polyimide having high resistance to hydrofluoric acid may be used to protect the 1 st metal layer 112, the 2 nd metal layer 114, and the frame 120, and hydrofluoric acid may be used to dissolve the supporting substrate 140.

3-3. formation of opening No. 1

Then, the 1 st metal layer 112 is irradiated with laser light to form a 1 st opening 112a (fig. 9B). Specifically, the 1 st metal layer 112 is irradiated with laser light from the side opposite to the 2 nd metal layer 114, and a part of the 1 st metal layer 112 is removed by the energy of the laser light (laser ablation). The type of laser light is not limited, and laser light oscillated from a laser such as a YAG laser, a fiber laser, a semiconductor laser, a carbon dioxide laser, a helium-neon laser, an excimer laser, or an argon laser can be used. As described above, the 1 st metal layer 112 is formed to have a relatively small film thickness. Therefore, a part of the 1 st metal layer 112 can be removed quickly by irradiation with laser light, and the 1 st opening 112a can be formed (fig. 9C). Laser ablation may be performed by irradiating a desired region of the 1 st metal layer 112 with laser light from one or more laser emitting holes and sequentially moving the irradiated portion (fig. 9C and 9D).

3-4 other methods of manufacturing vapor deposition mask Unit

The method of manufacturing the vapor deposition mask unit 100 is not limited to the above method. For example, a metal substrate containing copper, a metal such as aluminum, titanium, iron, nickel, cobalt, chromium, molybdenum, or manganese, or an alloy containing a metal selected from these metals can be used as the support substrate 140. In this case, as shown in fig. 10A, it is preferable to form the peeling layer 130 on the support substrate 140. The peeling layer 130 is a functional layer for promoting peeling of the vapor deposition mask unit 100 formed on the support substrate 140 from the support substrate 140, and for example, a metal thin film of nickel, molybdenum, tungsten, or the like can be used. The release layer 130 may be formed to have a thickness of 20 μm to 200 μm or less, or 40 μm to 150 μm by, for example, a plating method, a sputtering method, or a CVD method.

Next, the 1 st metal layer 112 is formed on the entire surface or substantially the entire surface of the supporting substrate 140 by sputtering, CVD, plating, or the like without forming a resist mask on the supporting substrate 140 (fig. 10B). When the electrolytic plating method is used, the peeling layer 130 can be used as a seed layer, and the 1 st metal layer 112 can be formed by supplying electricity to the peeling layer 130 in a plating solution. In the case where the peeling layer 130 is not used, the 1 st metal layer 112 may also be formed by supplying power to the supporting substrate 140.

Then, a frame 120 is disposed on the 1 st metal layer 112. The frame 120 is disposed so as to be in contact with the 1 st metal layer 112. In this case, the magnet 144 may be disposed under the support substrate 140. The magnet 144 can generate a magnetic force to stabilize the position of the frame 120 (fig. 10C).

Next, a 2 nd metal layer 114 is formed. The method for forming the 2 nd metal layer 114 may include a step (fig. 11B) of forming a resist mask 142 in the non-opening portion (fig. 11A), supplying power to the 1 st metal layer 112 in the plating solution, and growing the 2 nd metal layer 114 by the electrolytic plating method, as in the above-described method. The resist mask 142 may be formed by coating a photosensitive resist by ordinary photolithography, curing by exposure through a photomask, and developing. At this time, the resist mask 142 may also be formed on the frame 120. Thereby preventing the 2 nd metal layer 114 from being formed on the frame 120.

After the growth of the 2 nd metal layer 114 is completed, the resist mask 142 is removed by etching or/and ashing using a stripping liquid. Thereby, the 2 nd metal layer 114 having a plurality of 2 nd openings 114a is formed (fig. 11B). Although not shown, a metal layer without a pattern may be formed on metal layer 1 112 by sputtering, CVD, or the like, and patterned by photolithography to form metal layer 2 114.

The process after this is the same as the process described above. That is, the support substrate 140 is peeled off from the 1 st metal layer 112, and then laser ablation is performed on the region where the 1 st opening 112a is formed (fig. 11C). Laser ablation may be performed by irradiating a desired region of the 1 st metal layer 112 with laser light from one or more laser emitting holes and sequentially moving the irradiated portion (fig. 11C). Through the above processes, the vapor deposition mask unit 100 having the structure shown in fig. 6A and 6B can be manufactured.

In the case of using the adhesive layer 122, a glass substrate, a quartz substrate, or a plastic substrate may be used as the supporting substrate 140, the 1 st metal layer 112 may be formed on the supporting substrate 140 (fig. 8A), the adhesive for forming the adhesive layer 122 may be applied to the 1 st metal layer 112, and the frame 120 may be provided thereon (fig. 12A). On the other hand, in the case of using a metal substrate as the supporting substrate 140, after the peeling layer 130 and the 1 st metal layer 112 are formed in this order on the supporting substrate 140 (fig. 10B), an adhesive may be applied to the 1 st metal layer 112, and the frame 120 may be provided thereon (fig. 12B). The subsequent processes are the same as those described above, and the formation of the resist mask 142, the formation of the 2 nd metal layer 114, the removal of the resist mask 142, the peeling of the support substrate 140 and the peeling layer 130, and the 1 st opening 112a are ablated with laser.

As described above, in the method for manufacturing the vapor deposition mask unit 100 according to the embodiment of the present invention, the support substrate 140 is peeled off from the vapor deposition mask unit 100 after the vapor deposition mask 110 is fixed to the frame 120 and before the 1 st opening 112a arranged so as to correspond to the vapor deposition region is formed. Since a physical force is applied to the vapor deposition mask 110 and the frame 120 when the support substrate 140 is peeled off, stress caused by deformation due to the applied force may remain in the vapor deposition mask unit 100 after peeling off, particularly in the vapor deposition mask 110. However, even if such a stress remains, since the 1 st opening 112a is formed by laser ablation after the deformation of the vapor deposition mask 110, the position (coordinate) thereof is not distorted, and the distortion is not changed by the remaining stress. Therefore, the vapor deposition mask unit 100 according to the embodiment of the present invention can be provided with the openings precisely arranged at the positions corresponding to the vapor deposition regions, which contributes to improvement of film formation accuracy in the vapor deposition process. This is advantageous compared to a step of peeling off the support substrate after forming the openings defining the vapor deposition region (the 1 st opening 112 in the vapor deposition mask unit 100). This is because, if the vapor deposition mask 100 is deformed or residual stress occurs due to peeling of the support substrate after formation of the openings, the positions of the openings change due to this, and the openings cannot be precisely arranged in the vapor deposition region.

The vapor deposition mask 110 of the vapor deposition mask unit 100 is a laminate of two metal layers (the 1 st metal layer 112 and the 2 nd metal layer 114), and the vapor deposition mask 110 does not contain an organic compound such as a resin. Therefore, it is possible to suppress the generation of foreign matter and defects due to the decomposition of the organic compound caused by the laser irradiation when the 1 st opening 112a is formed.

The above embodiments as embodiments of the present invention can be combined and implemented as appropriate as long as they do not contradict each other. Further, the embodiments in which the process is added, omitted, or the conditions are changed as appropriate by those skilled in the art based on the manufacturing method of each embodiment are also included in the scope of the present invention as long as the gist of the present invention is achieved.

Even if the operation and effect is other than the operation and effect according to the embodiments described above, the operation and effect which is clear from the description of the present specification or which can be easily predicted by a person skilled in the art is naturally understood as the operation and effect according to the present invention.

Claims

1. An evaporation mask unit, comprising:

a 1 st metal layer having a plurality of 1 st openings;

a 2 nd metal layer located on the 1 st metal layer, contacting with the 1 st metal layer, and having a plurality of 2 nd openings; and

a frame on the 1 st metal layer,

a portion of the frame extends in a region between two adjacent 1 st openings and between two adjacent 2 nd openings, overlapping with the 1 st metal layer in the region,

at least one of the plurality of 1 st openings overlaps one of the plurality of 2 nd openings.

2. The vapor deposition mask unit according to claim 1, wherein:

the number of the plurality of 1 st openings is the same as the number of the plurality of 2 nd openings.

3. The vapor deposition mask unit according to claim 2, wherein:

the area of each of the plurality of 1 st openings is smaller than the area of any of the plurality of 2 nd openings.

4. The vapor deposition mask unit according to claim 1, wherein:

at least one of the plurality of 2 nd openings overlaps with two or more of the 1 st openings.

5. The vapor deposition mask unit according to claim 1, wherein:

the frame is located on the 2 nd metal layer and is in contact with the 2 nd metal layer.

6. The vapor deposition mask unit according to claim 5, wherein:

the frame overlaps the 2 nd metal layer in the region.

7. The vapor deposition mask unit according to claim 5, wherein:

the 2 nd metal layer is sandwiched by the 1 st metal layer and the frame.

8. The vapor deposition mask unit according to claim 1, wherein:

the frame is in contact with the 1 st metal layer.

9. The vapor deposition mask unit according to claim 8, wherein:

the bottom surface and the side surface of the frame are respectively contacted with the 1 st metal layer and the 2 nd metal layer.

10. The vapor deposition mask unit according to claim 1, wherein:

and an adhesive layer is also arranged between the 1 st metal layer and the frame.

11. The vapor deposition mask unit according to claim 10, wherein:

the bottom surface and the side surface of the frame are respectively contacted with the bonding layer and the No. 2 metal layer.

12. A method for manufacturing a vapor deposition mask unit, comprising:

a step of forming a 1 st metal layer on a support substrate;

disposing a frame on the 1 st metal layer;

a step of forming a 2 nd metal layer having a plurality of 2 nd openings on the 1 st metal layer;

a step of peeling the support substrate from the 1 st metal layer; and

a step of forming a plurality of 1 st openings in the 1 st metal layer by irradiating the 1 st metal layer with laser light from a side opposite to the 2 nd metal layer,

the plurality of 1 st openings are formed in such a manner that at least one of the plurality of 1 st openings overlaps one of the plurality of 2 nd openings.

13. The manufacturing method according to claim 12, wherein:

the laser beam is irradiated to the 1 st metal layer so that the area of each of the 1 st openings is smaller than the area of any of the 2 nd openings.

14. The manufacturing method according to claim 12, wherein:

the laser beam is irradiated to the 1 st metal layer so that at least one of the plurality of 2 nd openings overlaps with two or more of the 1 st openings.

15. The manufacturing method according to claim 12, wherein:

the formation of the 2 nd metal layer is performed so that the 2 nd metal layer is in contact with the 1 st metal layer,

the frame is disposed so that the frame is in contact with the 2 nd metal layer after the 2 nd metal layer is formed.

16. The manufacturing method according to claim 12, wherein:

the frame is disposed so as to be in contact with the 1 st metal layer before the 2 nd metal layer is formed.

17. The manufacturing method according to claim 16, wherein:

the 2 nd metal layer is formed so that the 2 nd metal layer is in contact with the 1 st metal layer and the side surface of the frame.

18. The manufacturing method according to claim 12, wherein:

further comprising the step of forming an adhesive layer on the 1 st metal layer in contact with the 1 st metal layer,

the frame is disposed so that the adhesive layer is sandwiched between the 1 st metal layer and the frame after the adhesive layer is formed,

the 2 nd metal layer is formed so as to be in contact with the 1 st metal layer and a side surface of the frame.

19. The manufacturing method according to claim 12, wherein:

the formation of the 1 st metal layer is performed by an electrolytic plating method.

20. The manufacturing method according to claim 12, wherein:

the formation of the 2 nd metal layer is performed by an electrolytic plating method.