KR20220052271A - Deposition mask unit and manufacturing method of the same - Google Patents

Abstract

The present invention is to provide a deposition mask unit having a plurality of precisely arranged openings and a manufacturing method thereof. The deposition mask unit includes a first metal layer, a second metal layer, and a frame on the first metal layer. The first metal layer includes a plurality of first openings. The second metal layer is located on the first metal layer, is in contact with the first metal layer, and has a plurality of second openings. The frame is located on the first metal layer. A part of the frame elongates a region between two adjacent first openings and between two adjacent second openings, and overlaps with the first metal layer in the region. At least one of the plurality of first openings overlaps with one of the plurality of second openings.

Description

DEPOSITION MASK UNIT AND MANUFACTURING METHOD OF THE SAME

One of the embodiments of the present invention relates to a deposition mask unit and a method for manufacturing the same.

A semiconductor element such as a display element or a memory element is a structure in which thin films made of various materials such as insulators, semiconductors, and conductors are laminated on an insulating substrate or semiconductor substrate, and these thin films are appropriately patterned and connected to a semiconductor element function as a A vacuum deposition method is mentioned as one of the methods of forming a thin film. In this method, the material is sublimed or evaporated (hereinafter, sublimation and evaporation are generally referred to as vaporization) by heating the material under a high vacuum to generate vapor of the material. At this time, a deposition mask is used to selectively deposit a material on a region (hereinafter, referred to as a deposition region) for forming a thin film. The vapor deposition mask has a plurality of openings for allowing the vapor of the material to pass through, and by performing vapor deposition in a state where the openings and the vapor deposition regions are overlapped, the vapor of the material can be selectively solidified and deposited on the vapor deposition region (Patent Document). see 1).

Japanese Patent Laid-Open No. 2017-210633

One of the embodiments of the present invention is to provide a vapor deposition mask unit and a method for manufacturing the same. For example, one of the embodiments of the present invention makes it a subject to provide a vapor deposition mask unit having a plurality of precisely arranged openings and a method for manufacturing the same.

One of the embodiments of the present invention is a deposition mask unit. This deposition mask unit includes a first metal layer, a second metal layer, and a frame on the first metal layer. The first metal layer has a plurality of first openings. The second metal layer is located on the first metal layer, is in contact with the first metal layer, and has a plurality of second openings. The frame is positioned on the first metal layer. A part of a frame extends|stretches the area|region between between two adjacent 1st openings and between two adjacent 2nd openings, and overlaps with a 1st metal layer in this area|region. At least one of the plurality of first openings overlaps one of the plurality of second openings.

One of the embodiments of the present invention is a method for manufacturing a deposition mask unit. This manufacturing method comprises: forming a first metal layer on a support substrate; disposing a frame on the first metal layer; forming a second metal layer having a plurality of second openings on the first metal layer; This includes peeling the support substrate from the metal layer and forming a plurality of first openings in the first metal layer by irradiating the first metal layer with a laser beam from the opposite side to the second metal layer. The formation of the plurality of first openings is performed so that at least one of the plurality of first openings overlaps with one of the plurality of second openings.

1A is a schematic top view of a vapor deposition apparatus to which a vapor deposition mask unit according to one embodiment of the present invention is applicable;
Fig. 1B is a schematic side view of a vapor deposition apparatus to which a vapor deposition mask unit according to one embodiment of the present invention is applicable.
Fig. 2 is a schematic top view of a deposition mask unit according to one embodiment of the present invention.
3 is a schematic top view of a deposition mask unit according to one embodiment of the present invention.
Fig. 4A is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
Fig. 4B is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
5A is a schematic top view of a deposition mask unit according to one embodiment of the present invention.
5B is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
Fig. 5C is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
6A is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
6B is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
7A is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
Fig. 7B is a schematic cross-sectional view of a deposition mask unit according to one embodiment of the present invention.
Fig. 8A is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 8B is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 8C is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 9A is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 9B is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 9C is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 10A is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 10B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 10C is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.
11A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
11B is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.
11C is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
12A is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.
12B is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, each embodiment of this invention is demonstrated, referring drawings etc. However, this invention can be implemented in various aspects in the range which does not deviate from the summary, and is limited to the description of embodiment illustrated below, and is not interpreted.

In order to make the description more clear, the drawings are sometimes shown schematically about the width, thickness, shape, etc. of each part compared to the actual aspect, but they are only examples and do not limit the interpretation of the present invention. In this specification and each drawing, the same code|symbol is attached|subjected to the element provided with the function similar to that demonstrated with respect to the previous drawing, and overlapping description may be abbreviate|omitted.

In the present specification and claims, in expressing the aspect of arranging another structure on a certain structure, if it is simply expressed as "on", unless otherwise specified, another structure is placed immediately above it so as to be in contact with a certain structure. It shall include both the case of arrangement|positioning and the case of arrange|positioning another structure above a certain structure with another structure further interposed.

Hereinafter, the expression "that a certain structure is exposed from another structure" means an aspect in which a part of a certain structure is not covered by another structure, and the part not covered by other structures is further exposed by another structure Covering is also included.

Hereinafter, the vapor deposition mask unit 100 which concerns on one Embodiment of this invention and its manufacturing method are demonstrated.

1. Deposition apparatus

The deposition mask unit 100 may be used to selectively form a film in a deposition region when a metal, an organic compound, an inorganic compound, or a mixture thereof is formed by a deposition method. 1A and 1B show a schematic top view and a side view of a typical vapor deposition apparatus used in film formation by vapor deposition. A vapor deposition apparatus is comprised from the some chamber which has various functions. One of the chambers is the deposition chamber 150 shown in FIG. 1A, and the deposition chamber 150 is partitioned from an adjacent chamber by a load lock door 152, and the inside is in a high vacuum decompression state or nitrogen or argon. It is configured to remain filled with an inert gas. Accordingly, a decompression device, a gas intake/exhaust mechanism, and the like (not shown) are connected to the deposition chamber 150 .

The deposition chamber 150 provides a space in which an object to be formed, such as a substrate, can be accommodated. In the example shown in FIGS. 1A and 1B , the deposition source 154 is disposed under the substrate 170 , and the deposition source 154 is filled with a material to be deposited. In the deposition source 154, the material is heated and vaporized, and when the vapor of the material reaches the surface of the substrate 170 through the opening (to be described later) of the deposition mask unit 100, it cools and solidifies, and the material is deposited A film of material is applied on the substrate 170 (on the lower surface of the substrate 170 in FIG. 1B ). In the example shown in Fig. 1A, an evaporation source 154 (also referred to as a linear source) having a substantially linear shape and arranged along one side of the substrate 170 is provided, but the evaporation source 154 is optional. It is possible to have a shape of , and may be a deposition source 154, a so-called point source, such as overlapping the center of gravity of the substrate 170 . In the case of the point source, the relative positions of the substrate 170 and the deposition source 154 are fixed, and a mechanism for rotating the substrate 170 may be provided.

When the linear source type deposition source 154 is used, the deposition chamber 150 is configured such that the substrate 170 and the deposition source 154 move relatively. In FIG. 1A , an example in which the deposition source 154 is fixed and the substrate 170 moves thereon is illustrated. As shown in FIG. 1B , in the deposition chamber 150 , a holder 160 for holding the substrate 170 and the deposition mask unit 100 , and a moving mechanism 158 for moving the holder 160 . , a shutter 156 and the like are provided. The positional relationship between the substrate 170 and the deposition mask unit 100 is maintained by the holder 160 , and the substrate 170 and the deposition mask unit 100 are moved to the deposition source 154 by the moving mechanism 158 . can be moved on the The shutter 156 is provided on the evaporation source 154 in order to shield the vapor of the material or to allow it to reach the substrate 170 , and opening and closing is controlled by a control device (not shown). Although not shown, the deposition chamber 150 is provided with a sensor for monitoring the deposition rate of the material, an anti-adhesion plate for preventing contamination by the material, and a pressure gauge for monitoring the pressure in the deposition chamber 150 .

2. Deposition mask unit

2 is a schematic diagram of a top surface of the deposition mask unit 100, an enlarged view of a part of FIG. 2 is shown in FIG. 3, and a schematic diagram of a cross-section taken along the chain line A-A' of FIG. 2 and the chain line B-B' of FIG. 3, respectively 4A and 4B. As shown in these drawings, the deposition mask unit 100 includes, as a basic configuration, a deposition mask 110 and a frame 120 provided on the deposition mask 110 . The deposition mask 110 includes a first metal layer 112 and a second metal layer 114 positioned on the first metal layer 112 and in contact with the first metal layer 112 ( FIGS. 4A and 4B ).

2-1. first metal layer

The first metal layer 112 has a plurality of openings (hereinafter, first openings) 112a. The first opening 112a is an opening that determines a deposition area, and the material passing through the first opening 112a is solidified and deposited on a film-forming object such as a substrate, whereby a thin film of material is formed. The thickness of the 1st metal layer 112 is suitably selected from the range of 0.5 micrometer or more and 10 micrometers or less, 1 micrometer or more and 5 micrometers or less, or 1 micrometer or more and 3 micrometers or less, for example. The first metal layer 112 includes a metal selected from zero-valent metals such as nickel, iron, cobalt, copper, titanium, and chromium, or an alloy containing at least one of these metals. The first metal layer 112 may further contain carbon. The first metal layer 112 may have a single-layer structure or may be constituted by a plurality of layers containing different materials. For example, the first metal layer 112 may have a laminated structure of a layer containing titanium and a layer containing nickel.

2-2. second metal layer

The second metal layer 114 also has a plurality of openings (hereinafter, second openings) 114a. 3 to 4B, one first opening 112a is provided with respect to one second opening 114a, and one first opening 112a and one second opening 114a are provided. The first opening 112a and the second opening 114a are disposed so that they overlap each other. The area of the 1st opening 112a may be smaller than the area of the 2nd opening 114a, and each area of the some 1st opening 112a may be smaller than any area of the 2nd opening 114a. Accordingly, the one second opening 114a surrounds at least one or all sides constituting the at least one first opening 112a. In other words, the entirety of the first opening 112a overlaps the second opening 114a. For this reason, a part of the first metal layer 112 is exposed through the second opening 114a, and a step 113 exists between the first metal layer 112 and the second metal layer 114 ( FIG. 4B ).

The number of the first openings 112a and the second openings 114a is not necessarily the same, and the former may be larger than the latter. For example, as shown in the schematic diagram of the top surface of the deposition mask unit 100 shown in FIG. 5A and the schematic diagram of the cross section along the dashed lines C-C' and D-D' in FIG. 5A ( FIGS. 5B and 5C ), one A plurality of first openings 112a are provided with respect to the second openings 114a of You may arrange|position the opening 114a. Two or more may be sufficient as the number of 1st opening 112a which overlaps with one 2nd opening 114a.

The thickness of the second metal layer 114 may be the same as or greater than the thickness of the first metal layer 112, for example, 5 μm or more and 200 μm or less, 5 μm or more and 100 μm or less, or 10 μm or more and 100 μm or less. What is necessary is just to select suitably from the range. By forming the second metal layer 114 to a thickness greater than that of the first metal layer 112 , warpage of the first metal layer 112 or a change in the position of the first opening 112a resulting therefrom is prevented, and the deposition region is more precisely A first opening 112a may be disposed thereon. The second metal layer 114 also includes a metal selected from zero-valent metals such as nickel, iron, cobalt, copper, titanium, and chromium, or an alloy containing at least one of these metals, and may further include carbon. The composition of the first metal layer 112 and the second metal layer 114 may be the same or different.

2-3. frame

4A and 4B , the frame 120 is provided to be in contact with the second metal layer 114 , whereby the deposition mask 110 is fixed to the frame 120 . The frame 120 has a function of imparting strength so that the deposition mask 110 is not deformed, the shape of the deposition mask 110 is maintained by the frame 120 , and the deposition mask 110 is bent or caused by it. A change in the position of the first opening 112a or the second opening 114a is prevented. Thereby, the 1st opening 112a or the 2nd opening 114a can be precisely arrange|positioned so that it may overlap with a deposition area|region. The frame 120 also includes a zero-valent metal, and the metal is selected from nickel, iron, cobalt, chromium, manganese, and the like. For example, the frame 120 may be an alloy containing iron and chromium, an alloy containing iron, nickel, and manganese, or carbon may be contained in the alloy. The thickness of the frame 120 may be larger than the first metal layer 112 or the second metal layer 114, and is appropriately selected from, for example, 0.5 mm or more and 1 cm or less, or 1 mm or more and 5 mm or less.

As shown in FIG. 2 , the frame 120 has an outer frame 120a surrounding all of the first openings 112a or the second openings 114a. The outer frame 120a is disposed along the outer periphery of the deposition mask 110 ( FIG. 4A ).

As an optional configuration, the frame 120 may include an inner frame 120b integrated with the outer frame 120a (see Fig. 2). The inner frame 120b, which is a part of the frame 120, is provided to extend a region between the adjacent first openings 112a and between the adjacent second openings 114a (FIG. 4B). The inner frame 120b is surrounded by the outer frame 120a, and the area surrounded by the outer frame 120a is divided into a plurality of areas (windows). The strength of the outer frame 120a is increased by this structure, which contributes to the prevention of deformation of the deposition mask unit 100 . When vapor deposition is performed on a large substrate, the length of one side of the outer frame 120a may exceed 3 m. For this reason, by providing the inner frame 120b, bending of the deposition mask unit 100 is effectively prevented, so that the first opening 112a or the second opening 114a can be precisely arranged on the deposition area on the large substrate. there is.

4A and 4B , the frame 120 may be provided to overlap the first metal layer 112 and the second metal layer 114 . That is, the frame 120 may be disposed such that the second metal layer 114 is sandwiched between the first metal layer 112 and the frame 120 . In this case, the entire bottom surface of the inner frame 120b may overlap the first metal layer 112 or the second metal layer 114 .

Alternatively, as shown in FIGS. 6A and 6B , the frame 120 may be in contact with the first metal layer 112 . Also in this case, the frame 120 may be arranged so that the entire bottom surface of the inner frame 120b overlaps the first metal layer 112 . The second metal layer 114 is provided to be in contact with the upper surface of the first metal layer 112 and the side surface of the frame 120 . In other words, the bottom and side surfaces of the frame 120 are in contact with the first metal layer 112 and the second metal layer 114 , respectively.

Alternatively, as shown in FIGS. 7A and 7B , an adhesive layer 122 in contact with the frame 120 and the first metal layer 112 may be provided between the frame 120 and the first metal layer 112 . The adhesive layer 122 may include, for example, a photocurable or thermosetting acrylic adhesive or an epoxy adhesive. Also in this case, the frame 120 may be disposed such that the entire bottom surface of the inner frame 120b overlaps the first metal layer 112 . In addition, the second metal layer 114 is provided to be in contact with the upper surface of the first metal layer 112 and the side surface of the frame 120 . The side surface of the adhesive layer 122 may be in contact with the second metal layer 114 , whereby the adhesive layer 122 is sealed by the first metal layer 112 , the second metal layer 114 and the frame 120 , and the adhesive layer A structure in which (122) is not exposed to the outside can be obtained. When the adhesive layer 122 is sealed, when the deposition mask unit 100 is cleaned with a cleaning solution such as an organic solvent or water, swelling of the adhesive layer 122 is prevented by the cleaning solution, thereby reducing the volume change accompanying the swelling and adhesive strength. does not cause degradation Accordingly, it is possible to prevent a change in the shape of the deposition mask unit 100 or the arrangement of the first opening 112a and the second opening 114a. In addition, since dissolution of the adhesive layer 122 can be prevented, contamination of the deposition mask unit 100 can be prevented.

When vapor deposition is performed using the deposition mask unit 100 , the deposition mask unit 100 and the film formation object are arranged so that the deposition region and the first opening 112a overlap. The deposition mask unit 100 is arranged so that the first metal layer 112 is closer to the film formation target than the second metal layer 114 . The vapor of the material sequentially passes through the second opening 114a and the first opening 112a, and the material deposits on the deposition area. When a film is formed on each of a plurality of pixels provided in the display area of the display device by deposition, the deposition mask unit 100 is disposed such that the plurality of first openings 112a overlap the pixel electrodes of the display device. As will be described later, the first opening 112a of the deposition mask 110 can be precisely provided at a position corresponding to a target deposition region. For this reason, even when a plurality of deposition regions are arranged at very small intervals, it is possible to selectively form a film on the deposition regions. This contributes to the improvement of the manufacturing yield of the electronic device manufactured through vapor deposition processes, such as an organic electroluminescent display apparatus, and makes it possible to reduce the manufacturing cost of an electronic device.

3. Manufacturing method of deposition mask unit

An example of the manufacturing method of the deposition mask unit 100 is demonstrated using FIG. 8A to FIG. 12B. These drawings are schematic cross-sectional views of the deposition mask unit 100, and correspond to FIG. 4B.

3-1. Formation of the deposition mask

First, a first metal layer 112 is formed on the insulating support substrate 140 ( FIG. 8A ). Examples of the insulating support substrate 140 include a glass substrate, a quartz substrate, or a plastic substrate made of polyester such as polyimide, polyamide, polycarbonate, or polyethylene terephthalate. Preferably, a material having a high transmittance to laser light, which will be described later, is used. Without forming a resist mask on the support substrate 140, the first metal layer 112 is applied to the entire surface or almost the entire surface of the support substrate 140 by a sputtering method, a chemical vapor deposition (CVD) method, or a plating method (electrolytic plating method, The first metal layer 112 is formed using an electroless plating method or the like. In the case of using the electrolytic plating method, a seed layer containing a metal such as titanium, nickel, chromium, copper, gold, or an alloy thereof, or the like is formed by using a sputtering method or a CVD method, and then the seed layer in the plating solution. You may form the 1st metal layer 112 by electric power feeding to. As the plating solution, an aqueous electrolyte solution containing a nickel salt such as nickel sulfate or nickel chloride can be used.

After that, the second metal layer 114 is formed. As an example of a method for forming the second metal layer 114, the resist mask 142 is formed in a region (non-opening) other than the region where the second opening 114a is formed (FIG. 8B), and thereafter, the second metal layer 114 is formed in a plating solution. It includes supplying electric power to the first metal layer 112 and growing the second metal layer 114 by an electrolytic plating method (FIG. 8C). The resist mask 142 may be formed by application of a photosensitive resist performed by general photolithography, curing by exposure through a photomask, and development. The resist mask 142 is exposed through a photomask so that, for example, a negative type resist is applied on the first metal layer 112 and a region forming the second opening 114a is selectively exposed. . Alternatively, a positive resist is applied on the release layer 130, and exposure is performed through a photomask so that the non-opening portion is selectively exposed. Thereafter, development is performed to obtain a patterned resist mask 142 . A liquid may be sufficient as a resist, and the film-form photoresist called a resist film may be used for it. In addition, the thickness of the resist mask 142 is preferably larger than the thickness of the second metal layer 114 .

After the growth of the second metal layer 114 is completed, the resist mask 142 is removed by etching with a stripper and/or ashing. Thereby, the second metal layer 114 having the plurality of second openings 114a is formed (FIG. 8C). Although not shown, an unpatterned metal layer may be formed on the first metal layer 112 by sputtering or CVD, and the metal layer may be patterned by lithography to form the second metal layer 114 .

3-2. Placing and fixing the frame

Thereafter, as shown in Fig. 9A, the frame 120 is arranged. The frame 120 is disposed to contact the second metal layer 114 and to extend the region between the second openings 114a adjacent to the inner frame 120b. Thereafter, a laser beam is irradiated to the first metal layer 112 from the side of the support substrate 140 (refer to the arrow in FIG. 9A ). Specifically, a laser beam is irradiated to a region where the inner frame 120b and the first metal layer 112 overlap with the support substrate 140 interposed therebetween. There is no restriction|limiting in the kind of laser beam, The laser beam oscillated from lasers, such as a YAG laser, a fiber laser, a semiconductor laser, a carbon dioxide laser, a helium-neon laser, an excimer laser, and an argon laser, can be used. There is no restriction|limiting also in the beam shape of a laser beam, You may have a two-dimensional shape, such as a point shape, a linear shape, or a circle or a square shape. The second metal layer 114 and the frame 120 are welded (laser welding) to each other by heat applied by the laser beam, and fixed to each other.

Subsequently, the support substrate 140 is peeled from the first metal layer 112 ( FIG. 9B ). Peeling of the support substrate 140 may be performed physically or may be performed chemically. In the latter case, the first metal layer 112 , the second metal layer 114 , and the frame 120 are formed by using a glass substrate as the support substrate 140 and using a resist with high resistance to hydrofluoric acid such as polyimide. Protect and dissolve the support substrate 140 using hydrofluoric acid.

3-3. formation of the first opening

Thereafter, a laser beam is irradiated to the first metal layer 112 to form a first opening 112a (FIG. 9B). Specifically, a laser beam is irradiated to the first metal layer 112 from the opposite side to the second metal layer 114 , and a part of the first metal layer 112 is removed (laser ablation) by the energy of the laser beam. There is no restriction|limiting in the kind of laser beam, The laser beam oscillated from lasers, such as a YAG laser, a fiber laser, a semiconductor laser, a carbon dioxide laser, a helium neon laser, an excimer laser, and an argon laser, can be used. As described above, the first metal layer 112 is formed to have a relatively small film thickness. For this reason, a part of the 1st metal layer 112 is quickly removed by irradiation of a laser beam, and the 1st opening 112a can be formed (FIG. 9C). The laser ablation may be performed by irradiating a laser onto a desired area of the first metal layer 112 from one or more laser exit orifices, and sequentially moving the irradiation location ( FIGS. 9C and 9D ).

3-4. Another manufacturing method of the deposition mask unit

The manufacturing method of the deposition mask unit 100 is not limited to the above-described method. For example, as the support substrate 140 , a metal substrate including a metal such as copper, aluminum, titanium, iron, nickel, cobalt, chromium, molybdenum, manganese, or an alloy containing a metal selected from these may be used. In this case, as shown in FIG. 10A , it is preferable to form the release layer 130 on the support substrate 140 . The release layer 130 is a functional layer for promoting peeling of the deposition mask unit 100 formed on the support substrate 140 from the support substrate 140 , for example, a metal such as nickel, molybdenum, or tungsten. A thin film may be used. What is necessary is just to form the peeling layer 130 using the plating method, sputtering method, or CVD method so that it may become a thickness of 20 micrometers or more and 200 micrometers or less, or 40 micrometers or more and 150 micrometers or less, for example.

Subsequently, without forming a resist mask on the support substrate 140 , the first metal layer 112 is applied to the entire surface or almost the entire surface of the support substrate 140 using a sputtering method, a CVD method, a plating method, or the like. A metal layer 112 is formed (FIG. 10B). When the electrolytic plating method is used, the first metal layer 112 can be formed by using the release layer 130 as a seed layer and supplying power to the release layer 130 in a plating solution. When the release layer 130 is not used, the first metal layer 112 may be formed by supplying power to the support substrate 140 .

Thereafter, the frame 120 is disposed on the first metal layer 112 . The frame 120 is disposed to be in contact with the first metal layer 112 . At this time, the magnet 144 may be disposed under the support substrate 140 . The position of the frame 120 may be stabilized by the magnetic force of the magnet 144 ( FIG. 10c ).

Subsequently, the second metal layer 114 is formed. The method of forming the second metal layer 114 is the same as that described above, and the resist mask 142 is formed in the non-opening portion (FIG. 11A), and then, power is supplied to the first metal layer 112 in the plating solution, and the second It may include growing the metal layer 114 by an electrolytic plating method (FIG. 11B). The resist mask 142 may be formed by application of a photosensitive resist performed by general photolithography, curing by exposure through a photomask, and development. At this time, the resist mask 142 may also be formed on the frame 120 . Accordingly, the formation of the second metal layer 114 on the frame 120 is prevented.

After the growth of the second metal layer 114 is completed, the resist mask 142 is removed by etching with a stripper and/or ashing. Thereby, the second metal layer 114 having the plurality of second openings 114a is formed (FIG. 11B). Although not shown, an unpatterned metal layer may be formed on the first metal layer 112 by sputtering or CVD, and the metal layer may be patterned by lithography to form the second metal layer 114 .

The subsequent process is the same as the process described above. That is, the support substrate 140 is peeled off from the first metal layer 112 , and thereafter, laser ablation is performed on the region where the first opening 112a is formed ( FIG. 11C ). The laser ablation may be performed by irradiating a laser to a desired area of the first metal layer 112 from one or more laser exit ports, and then sequentially moving the irradiation location ( FIGS. 11C and 11D ). Through the above process, the deposition mask unit 100 having the structure shown in Figs. 6A or 6B can be manufactured.

In addition, when the adhesive layer 122 is used, the first metal layer 112 is formed on the support substrate 140 using a glass substrate, a quartz substrate, or a plastic substrate as the support substrate 140 ( FIG. 8A ). , After that, an adhesive for providing the adhesive layer 122 is applied to the first metal layer 112 , and the frame 120 may be provided thereon ( FIG. 12A ). On the other hand, when a metal substrate is used as the support substrate 140 , the release layer 130 and the first metal layer 112 are sequentially formed on the support substrate 140 ( FIG. 10B ), and then an adhesive is applied to the first metal layer. What is necessary is just to apply to (112), and to provide the frame 120 on it (FIG. 12b). The subsequent process is the same as the process described above, and includes the formation of the resist mask 142 , the formation of the second metal layer 114 , the removal of the resist mask 142 , the peeling of the support substrate 140 and the release layer 130 , And the first opening 112a by laser ablation is performed.

As described above, in the method of manufacturing the deposition mask unit 100 according to one embodiment of the present invention, after fixing the deposition mask 110 and the frame 120 , the first opening ( Before forming 112a), the support substrate 140 is peeled off from the deposition mask unit 100 . Since a physical force is applied to the deposition mask 110 or the frame 120 when the support substrate 140 is peeled off, the deposition mask unit 100, particularly the deposition mask 110, is deformed by the applied force after peeling. Stresses caused by this may remain. However, even if this stress remains, since the first opening 112a is formed by laser ablation after deformation of the deposition mask 110, its position (coordinate) does not depend on the deformation at the time of peeling, but depends on the residual stress. does not change even by For this reason, the vapor deposition mask unit 100 which concerns on one embodiment of this invention can be equipped with the opening precisely arrange|positioned at the position corresponding to the vapor deposition area|region, and this contributes to the improvement of the film-forming precision in a vapor deposition process. do. This is advantageous compared with the process of peeling off the support substrate after forming the openings defining the deposition area (the first openings 112 in the deposition mask unit 100). This is because, when the deposition mask 100 is deformed or stress remains by peeling the support substrate after opening formation, the position of the opening changes due to this, and it becomes impossible to precisely arrange the opening on the deposition area. .

In addition, the deposition mask 110 of the deposition mask unit 100 is a laminate of two metal layers (the first metal layer 112 and the second metal layer 114 ), and the deposition mask 110 contains an organic material such as a resin. Compounds are not included. For this reason, generation|occurrence|production of the defect resulting from the foreign material which generate|occur|produces by decomposition|disassembly of the organic compound by laser irradiation at the time of forming the 1st opening 112a can also be suppressed.

Each embodiment described above as an embodiment of the present invention can be implemented in an appropriate combination as long as they do not contradict each other. In addition, it is also included in the scope of the present invention that a person skilled in the art appropriately adds, omits, or changes conditions based on the manufacturing method of each embodiment as long as the gist of the present invention is provided.

Even if there are other effects and effects different from the effects caused by the aspects of each embodiment described above, things that are clear from the description of the present specification, or things that can be easily predicted by those skilled in the art, are naturally caused by the present invention. is interpreted that

100: deposition mask unit, 110: deposition mask, 112: first metal layer, 112a: first opening, 113: step, 114: second metal layer, 114a: second opening, 120: frame, 120a: outer frame, 120b: Inner frame, 122: adhesive layer, 130: release layer, 140: support substrate, 142: resist mask, 144: magnet, 150: deposition chamber, 152: load lock door, 154: evaporation source, 156: shutter, 158: movement mechanism , 160: holder, 170: substrate

Claims (20)

a first metal layer having a plurality of first openings;
a second metal layer disposed on the first metal layer and in contact with the first metal layer and having a plurality of second openings; and
and a frame on the first metal layer;
A part of the frame extends a region between two adjacent first openings and two adjacent second openings, and overlaps with the first metal layer in the region;
at least one of the plurality of first openings overlaps with one of the plurality of second openings. The deposition mask unit according to claim 1, wherein the number of the plurality of first openings is equal to the number of the plurality of second openings. The deposition mask unit according to claim 2, wherein an area of each of the plurality of first openings is smaller than any area of the plurality of second openings. The deposition mask unit of claim 1 , wherein at least one of the plurality of second openings overlaps two or more of the first openings. The deposition mask unit of claim 1 , wherein the frame is positioned on the second metal layer and is in contact with the second metal layer. The deposition mask unit according to claim 5, wherein the frame overlaps the second metal layer in the region. The deposition mask unit of claim 5 , wherein the second metal layer is sandwiched between the first metal layer and the frame. The deposition mask unit of claim 1 , wherein the frame is in contact with the first metal layer. The deposition mask unit of claim 8 , wherein a bottom surface and a side surface of the frame are in contact with the first metal layer and the second metal layer, respectively. The deposition mask unit of claim 1 , further comprising an adhesive layer between the first metal layer and the frame. The deposition mask unit of claim 10 , wherein a bottom surface and a side surface of the frame are in contact with the adhesive layer and the second metal layer, respectively. forming a first metal layer on the support substrate;
disposing a frame on the first metal layer;
forming a second metal layer having a plurality of second openings on the first metal layer;
peeling the support substrate from the first metal layer, and
forming a plurality of first openings in the first metal layer by irradiating a laser beam with respect to the first metal layer from a side opposite to the second metal layer;
The method of manufacturing a deposition mask unit, wherein the formation of the plurality of first openings is performed such that at least one of the plurality of first openings overlaps with one of the plurality of second openings. The manufacturing method according to claim 12, wherein the laser beam irradiation to the first metal layer is performed so that each area of the plurality of first openings is smaller than any area of the plurality of second openings. The manufacturing method according to claim 12, wherein irradiation of the laser beam to the first metal layer is performed so that at least one of the plurality of second openings overlaps with two or more of the first openings. The method according to claim 12, wherein the formation of the second metal layer is performed so that the second metal layer is in contact with the first metal layer,
The method of claim 1, wherein the disposition of the frame is performed so that the frame is in contact with the second metal layer after the formation of the second metal layer. The manufacturing method according to claim 12, wherein said arrangement of said frame is performed so that said frame is in contact with said first metal layer before formation of said second metal layer. The manufacturing method according to claim 16, wherein the formation of the second metal layer is performed so that the second metal layer is in contact with a side surface of the frame and the first metal layer. 13. The method of claim 12, further comprising forming an adhesive layer in contact with the first metal layer on the first metal layer,
The arrangement of the frame is such that, after the formation of the adhesive layer, the adhesive layer is sandwiched by the first metal layer and the frame,
The second metal layer is formed so as to be in contact with a side surface of the frame and the first metal layer. The manufacturing method according to claim 12, wherein the formation of the first metal layer is performed by an electrolytic plating method. The manufacturing method according to claim 12, wherein the formation of the second metal layer is performed by an electrolytic plating method.

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