JP2014125671A - Vapor deposition mask, and manufacturing method of the same - Google Patents

Vapor deposition mask, and manufacturing method of the same Download PDF

Info

Publication number
JP2014125671A
JP2014125671A JP2012284936A JP2012284936A JP2014125671A JP 2014125671 A JP2014125671 A JP 2014125671A JP 2012284936 A JP2012284936 A JP 2012284936A JP 2012284936 A JP2012284936 A JP 2012284936A JP 2014125671 A JP2014125671 A JP 2014125671A
Authority
JP
Japan
Prior art keywords
hole
opening pattern
dummy
vapor deposition
magnetic metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012284936A
Other languages
Japanese (ja)
Other versions
JP5976527B2 (en
Inventor
Michinobu Mizumura
通伸 水村
Shuji Kudo
修二 工藤
Katsuya Obata
勝也 小幡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
V Technology Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd, V Technology Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2012284936A priority Critical patent/JP5976527B2/en
Publication of JP2014125671A publication Critical patent/JP2014125671A/en
Application granted granted Critical
Publication of JP5976527B2 publication Critical patent/JP5976527B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

PROBLEM TO BE SOLVED: To provide a vapor deposition mask improved in an opening pattern shape and location accuracy.SOLUTION: A vapor deposition mask includes: a resin film 2 in which an opening pattern 6 with the same dimensions as that of a thin film pattern to be deposited on a substrate is formed; and a thin-plate type magnetic metal member 1 through which a through hole 4 is provided, of which size includes the opening pattern 6. The vapor deposition mask has a structure in which the resin film 2 and the thin-plate type film 2 contact tightly. A dummy through hole 5 is provided in a region of the magnetic metal member 1, other than the an evaporation effective region which includes the through hole 4. A dummy opening pattern 7 is provided to control deformation of the opening pattern 6 and the through hole 4, the deformation being caused by difference in thermal expansion between the film 2 and the magnetic metal member 1.

Description

本発明は、開口パターンを設けた樹脂製フィルムを薄板状の磁性金属部材で支持する構造の蒸着マスクに関し、特に開口パターンの形状及び位置精度を向上し得る蒸着マスク及びその製造方法に係るものである。   The present invention relates to a vapor deposition mask having a structure in which a resin film provided with an opening pattern is supported by a thin plate-shaped magnetic metal member, and particularly relates to a vapor deposition mask capable of improving the shape and positional accuracy of the opening pattern and a method for manufacturing the same. is there.

従来の蒸着マスクは、金属板に形成された貫通する複数の開口パターンと、該複数の開口パターンの各々の周りのマスク本体部と、該マスク本体部の周囲に位置するマスク本体部の厚さより大なる厚さを有する周縁部とを備えたものとなっていた(例えば、特許文献1参照)。   A conventional vapor deposition mask has a plurality of opening patterns formed on a metal plate, a mask main body around each of the plurality of opening patterns, and a thickness of the mask main body located around the mask main body. And a peripheral portion having a large thickness (see, for example, Patent Document 1).

特開2001−237072号公報JP 2001-237072 A

しかし、このような従来の蒸着マスクは、金属板をエッチング処理して該金属板に貫通する複数の開口パターンを形成しているので、高精細な開口パターンを精度よく形成することができなかった。特に、一辺の長さが数10cm以上の大面積の例えば有機EL表示パネル用の蒸着マスクの場合、エッチングむらの発生によりマスク全面の開口パターンを均一に形成することができなかった。   However, since such a conventional vapor deposition mask forms a plurality of opening patterns penetrating through the metal plate by etching the metal plate, a high-definition opening pattern cannot be accurately formed. . In particular, in the case of a deposition mask for, for example, an organic EL display panel having a large area with a side length of several tens of centimeters or more, an opening pattern on the entire mask surface cannot be formed uniformly due to the occurrence of etching unevenness.

そこで、出願人は、基板に蒸着される薄膜パターンに対応して該薄膜パターンと形状寸法の同じ開口パターンを形成した樹脂製のフィルムと、開口パターンを内包する貫通孔を形成した薄板状の磁性金属部材とを密接させた構造の複合型の蒸着マスクを提案している。   In view of this, the applicant applied a thin film-like magnetic film having a resin film in which an opening pattern having the same shape and dimension as the thin film pattern deposited on the substrate and a through hole containing the opening pattern were formed. A composite deposition mask having a structure in which a metal member is in close contact is proposed.

上記複合型の蒸着マスクは、厚みが10μm〜30μm程度の薄い樹脂製フィルムに開口パターンをレーザ加工して形成するものであり、高精細な開口パターンを精度よく形成することができると共に、上述のような大面積の蒸着マスクもマスク全面に亘って均一に開口パターンを形成することができるという特長を有している。   The composite deposition mask is formed by laser-processing an opening pattern on a thin resin film having a thickness of about 10 μm to 30 μm, and can form a high-definition opening pattern with high accuracy, as described above. Such a large-area vapor deposition mask has a feature that an opening pattern can be formed uniformly over the entire mask.

しかしながら、上記複合型の蒸着マスクにおいては、例えばインバー又はインバー合金のような熱膨張係数の小さい磁性金属部材と樹脂製フィルムのような比較的熱膨張係数の大きい部材とを室温以上で密接させた後に、開口パターンをレーザ加工すると両部材間の熱膨張の差により開口パターン及び貫通孔が変形することがあった。   However, in the composite deposition mask, a magnetic metal member having a small thermal expansion coefficient such as Invar or Invar alloy and a member having a relatively large thermal expansion coefficient such as a resin film are brought into close contact with each other at room temperature or higher. Later, when the aperture pattern was laser processed, the aperture pattern and the through hole were sometimes deformed due to the difference in thermal expansion between the two members.

そこで、本発明は、このような問題点に対処し、開口パターンの形状及び位置精度を向上し得る蒸着マスク及びその製造方法を提供することを目的とする。   SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a vapor deposition mask capable of addressing such problems and improving the shape and position accuracy of an opening pattern and a method for manufacturing the same.

上記目的を達成するために、第1の発明による蒸着マスクは、基板に蒸着される薄膜パターンに対応して該薄膜パターンと形状寸法の同じ開口パターンを形成した樹脂製のフィルムと、前記開口パターンを内包する大きさの貫通孔を形成した薄板状の磁性金属部材とを密接させた構造の蒸着マスクであって、前記貫通孔を内包する蒸着有効領域外の前記磁性金属部材の部分にダミー貫通孔を設け、該ダミー貫通孔内の前記フィルムに、前記フィルムと前記磁性金属部材との間の熱膨張の差により発生する前記開口パターン及び前記貫通孔の変形を制御するためのダミー開口パターンを設けたものである。   In order to achieve the above object, a vapor deposition mask according to a first aspect of the present invention comprises a resin film in which an opening pattern having the same shape and dimension as a thin film pattern deposited on a substrate is formed, and the opening pattern A vapor deposition mask having a structure in which a thin plate-like magnetic metal member having a through-hole having a size to enclose a thin film is in close contact with the magnetic metal member outside the vapor deposition effective region enclosing the through-hole. A hole is provided, and the opening in the dummy through hole is provided with a dummy opening pattern for controlling the opening pattern generated by the difference in thermal expansion between the film and the magnetic metal member and the deformation of the through hole. It is provided.

また、第2の発明による蒸着マスクの製造方法は、基板に蒸着される薄膜パターンに対応して該薄膜パターンと形状寸法の同じ開口パターンを形成した樹脂製のフィルムと、前記開口パターンを内包する大きさの貫通孔を形成した薄板状の磁性金属部材とを密接させた構造の蒸着マスクの製造方法であって、蒸着のための有効領域内に貫通孔を設け、前記有効領域外にダミー貫通孔を設けた薄板状の磁性金属部材の一面に樹脂性のフィルムを密接させた構造のマスク用部材を形成する第1段階と、前記貫通孔内の前記フィルムを貫通させて前記開口パターンを形成する第2段階と、前記ダミー貫通孔内の前記フィルムを貫通させて前記ダミー開口パターンを形成する第3段階と、含むものである。   According to a second aspect of the present invention, there is provided a vapor deposition mask manufacturing method including a resin film formed with an opening pattern having the same shape and dimension as a thin film pattern deposited on a substrate, and the opening pattern. A method of manufacturing a vapor deposition mask having a structure in which a thin plate-like magnetic metal member having a through-hole of a size is in close contact, wherein a through-hole is provided in an effective area for vapor deposition, and dummy penetration is performed outside the effective area A first step of forming a mask member having a structure in which a resinous film is in close contact with one surface of a thin plate-like magnetic metal member provided with a hole, and the opening pattern is formed by penetrating the film in the through hole And a third step of forming the dummy opening pattern by penetrating the film in the dummy through hole.

本発明によれば、蒸着の有効領域外にダミー開口パターンを形成することにより、磁性金属部材とフィルムとの熱膨張差に基づく開口パターン及び貫通孔の変形を制御することができる。したがって、開口パターンの形状及び位置精度を向上することができる。   According to the present invention, it is possible to control the deformation of the opening pattern and the through hole based on the difference in thermal expansion between the magnetic metal member and the film by forming the dummy opening pattern outside the effective area of vapor deposition. Therefore, the shape and position accuracy of the opening pattern can be improved.

本発明による蒸着マスクの実施形態を示す図であり、(a)は平面図、(b)は(a)のO−O線断面矢視図である。It is a figure which shows embodiment of the vapor deposition mask by this invention, (a) is a top view, (b) is the OO line cross-sectional view of (a). 本発明による蒸着マスクの製造方法を説明するフローチャートである。It is a flowchart explaining the manufacturing method of the vapor deposition mask by this invention. 本発明による蒸着マスクの製造方法におけるマスク用部材の形成段階を断面で示す工程図である。It is process drawing which shows the formation step of the member for masks in the manufacturing method of the vapor deposition mask by this invention in a cross section. 本発明による蒸着マスクの製造方法におけるフレーム接合段階を断面で示す工程図である。It is process drawing which shows the flame | frame joining step in the manufacturing method of the vapor deposition mask by this invention in a cross section. 本発明による蒸着マスクの製造方法における開口パターン形成段階を断面で示す工程図である。It is process drawing which shows the opening pattern formation step in the manufacturing method of the vapor deposition mask by this invention in a cross section. 本発明による蒸着マスクの製造方法におけるダミー開口パターン形成段階を断面で示す工程図である。It is process drawing which shows the dummy opening pattern formation stage in the manufacturing method of the vapor deposition mask by this invention in a cross section. 本発明による蒸着マスクの製造方法における開口パターン及び貫通孔の変形制御について示す説明図である。It is explanatory drawing shown about the deformation | transformation control of the opening pattern and through-hole in the manufacturing method of the vapor deposition mask by this invention.

以下、本発明の実施形態を添付図面に基づいて詳細に説明する。図1は本発明による蒸着マスクの実施形態を示す図であり、(a)は平面図、(b)は(a)のO−O線断面矢視図である。この蒸着マスクは、開口パターンを設けた樹脂製フィルムを薄板状の磁性金属部材で支持する構造を有するもので、磁性金属部材1と、樹脂製フィルム2と、フレーム3とを備えて構成されている。   Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. 1A and 1B are views showing an embodiment of a vapor deposition mask according to the present invention, in which FIG. 1A is a plan view and FIG. 1B is a cross-sectional view taken along line OO in FIG. This vapor deposition mask has a structure in which a resin film provided with an opening pattern is supported by a thin magnetic metal member, and includes a magnetic metal member 1, a resin film 2, and a frame 3. Yes.

上記磁性金属部材1は、厚みが30μm〜50μm程度のニッケル、ニッケル合金、インバー又はインバー合金等の磁性金属材料からなる薄板(シート)状のものであり、例えば基板上に一定の配列ピッチでマトリクス状に並べて形成される複数の薄膜パターンの、例えば縦一列に並んだ複数の薄膜パターンを内包する大きさの複数の貫通孔4を、上記複数の薄膜パターンの横方向の配列ピッチと同じピッチで並べて設けている。なお、以下の説明においては、磁性金属部材1は、熱膨張係数が1×10−6/℃以下のインバー又はインバー合金の場合について述べる。 The magnetic metal member 1 is in the form of a thin plate (sheet) made of a magnetic metal material such as nickel, nickel alloy, invar or invar alloy having a thickness of about 30 μm to 50 μm. A plurality of through-holes 4 having a size including a plurality of thin film patterns arranged in a line, for example, a plurality of thin film patterns arranged in a line, are arranged at the same pitch as the horizontal arrangement pitch of the plurality of thin film patterns. It is provided side by side. In the following description, the case where the magnetic metal member 1 is an invar or an invar alloy having a thermal expansion coefficient of 1 × 10 −6 / ° C. or less will be described.

また、上記複数の貫通孔4を内包する蒸着の有効領域外の磁性金属部材1には、ダミー貫通孔5が設けられている。詳細には、上記ダミー貫通孔5は、上記複数の貫通孔4の並び方向の両側方に設けられている。この場合、磁性金属部材1に一定の配列ピッチで設けた複数の貫通孔4のうち、蒸着の有効領域外に位置する貫通孔4を上記ダミー貫通孔5としてもよい。   In addition, a dummy through hole 5 is provided in the magnetic metal member 1 outside the effective region of vapor deposition including the plurality of through holes 4. Specifically, the dummy through-holes 5 are provided on both sides in the arrangement direction of the plurality of through-holes 4. In this case, among the plurality of through holes 4 provided in the magnetic metal member 1 with a constant arrangement pitch, the through holes 4 located outside the effective region of vapor deposition may be used as the dummy through holes 5.

上記磁性金属部材1の一面に密接してフィルム2が設けられている。このフィルム2は、厚みが10μm〜30μm程度のポリイミドやポリエチレンテレフタレート(PET)等の可視光を透過する樹脂製のフィルムであり、上記磁性金属部材1の貫通孔4内にて薄膜パターンに対応した位置に該薄膜パターンと形状寸法の同じ貫通する開口パターン6が形成されている。また、上記ダミー貫通孔5内のフィルム2には、フィルム2と磁性金属部材1との間の熱膨張の差により発生する開口パターン6及び貫通孔4の変形を制御するための少なくとも一つのダミー開口パターン7が設けられている。なお、図1においては、一例としてダミー開口パターン7を一つ設けた場合について示している。また、複数の貫通孔4の並び方向(図1のX方向)と交差するY方向の開口パターン6の変形を制御すべく、Y方向の蒸着有効領域外にダミー開口パターン7をX方向に平行に設けてもよい。   A film 2 is provided in close contact with one surface of the magnetic metal member 1. This film 2 is a resin film that transmits visible light such as polyimide or polyethylene terephthalate (PET) having a thickness of about 10 μm to 30 μm, and corresponds to a thin film pattern in the through hole 4 of the magnetic metal member 1. An opening pattern 6 having the same shape and dimension as the thin film pattern is formed at the position. Further, the film 2 in the dummy through hole 5 has at least one dummy for controlling the deformation of the opening pattern 6 and the through hole 4 generated due to the difference in thermal expansion between the film 2 and the magnetic metal member 1. An opening pattern 7 is provided. FIG. 1 shows a case where one dummy opening pattern 7 is provided as an example. Further, in order to control the deformation of the opening pattern 6 in the Y direction that intersects the arrangement direction of the plurality of through holes 4 (the X direction in FIG. 1), the dummy opening pattern 7 is parallel to the X direction outside the effective deposition area in the Y direction. May be provided.

上記磁性金属部材1の周縁部に一端面3aを接合して、枠状のフレーム3が設けられている。このフレーム3は、磁性金属部材1を張架して支持するものであり、磁性金属部材1の複数の貫通孔4及びダミー貫通孔5を内包する大きさの開口8を設けたニッケル、ニッケル合金、インバー又はインバー合金等から形成されている。なお、フレーム3は、蒸着時の熱応力の発生を抑えて蒸着マスクの変形を防止するために、磁性金属部材1と同じ磁性材料で形成するのがよい。   A frame-like frame 3 is provided by joining one end surface 3 a to the peripheral edge of the magnetic metal member 1. The frame 3 supports the magnetic metal member 1 in a stretched manner, and is provided with nickel or a nickel alloy provided with openings 8 having a size including the plurality of through holes 4 and dummy through holes 5 of the magnetic metal member 1. , Invar or Invar alloy. The frame 3 is preferably formed of the same magnetic material as that of the magnetic metal member 1 in order to suppress the generation of thermal stress during vapor deposition and prevent deformation of the vapor deposition mask.

次に、このように構成された蒸着マスクの製造方法について説明する。
図2は本発明による蒸着マスクの製造方法を説明するフローチャートである。この蒸着マスクの製造方法は、樹脂性フィルム2の予め定められた位置に貫通する開口パターン6をレーザ加工して形成するもので、マスク用部材12を形成するステップS1と、フレーム3を接合するステップS2と、開口パターン6を形成するステップS3と、ダミー開口パターン7を形成するステップS4とを含んでいる。
Next, the manufacturing method of the vapor deposition mask comprised in this way is demonstrated.
FIG. 2 is a flowchart illustrating a method for manufacturing a vapor deposition mask according to the present invention. This vapor deposition mask manufacturing method is to form the opening pattern 6 penetrating through a predetermined position of the resinous film 2 by laser processing. The frame 3 is joined to the step S1 for forming the mask member 12. Step S2, Step S3 for forming the opening pattern 6 and Step S4 for forming the dummy opening pattern 7 are included.

上記ステップS1は、フィルム2の一面に開口パターン6を内包する大きさの貫通する貫通孔4及びダミー開口パターン7を内包する大きさのダミー貫通孔5を設けた磁性金属部材1を密接した構造のマスク用部材12を形成する工程である。以下、図3を参照して詳細に説明する。   The step S1 has a structure in which the magnetic metal member 1 provided with the through-hole 4 penetrating through the opening pattern 6 and the dummy through-hole 5 large enough to contain the dummy opening pattern 7 on one surface of the film 2 is in close contact. This is a step of forming the mask member 12. Hereinafter, this will be described in detail with reference to FIG.

先ず、図3(a)に示すように、インバー又はインバー合金からなる厚みが30μm〜50μm程度の磁性金属材料の磁性金属シート9を、蒸着対象である基板の表面積に合わせて切り出し、該磁性金属シート9の一面9aに例えばポリイミド等の樹脂液を塗布し、これを200℃〜300℃程度の温度で硬化させて厚みが10μm〜30μm程度の可視光を透過するフィルム2を形成する。   First, as shown in FIG. 3A, a magnetic metal sheet 9 made of invar or an invar alloy and having a thickness of about 30 μm to 50 μm is cut out according to the surface area of the substrate to be deposited, and the magnetic metal A resin liquid such as polyimide is applied to one surface 9a of the sheet 9 and cured at a temperature of about 200 ° C. to 300 ° C. to form a film 2 that transmits visible light having a thickness of about 10 μm to 30 μm.

次いで、図3(b)に示すように、磁性金属シート9の他面9bにレジストを例えばスプレー塗布した後、これを乾燥させてレジストフィルムを形成し、次に、フォトマスクを使用してレジストフィルムを露光・現像し、後述のステップS3,4において形成される複数の開口パターン6及びダミー開口パターン7に対応した位置に該開口パターン6及びダミー開口パターン7を内包する大きさの複数の開口10を有するレジストマスク11を形成する。   Next, as shown in FIG. 3B, a resist is applied on the other surface 9b of the magnetic metal sheet 9, for example, by spraying, and then dried to form a resist film. Next, the resist is formed using a photomask. The film is exposed and developed, and a plurality of openings having a size including the opening pattern 6 and the dummy opening pattern 7 at positions corresponding to the plurality of opening patterns 6 and the dummy opening pattern 7 formed in steps S3 and S4 described later. A resist mask 11 having 10 is formed.

続いて、図3(c)に示すように、上記レジストマスク11を使用して磁性金属シート9をウェットエッチングし、レジストマスクの開口10に対応した部分の磁性金属シート9を除去して貫通孔4及びダミー貫通孔5を設けて磁性金属部材1を形成した後、レジストマスク11を例えば有機溶剤に溶解させて除去する。これにより、磁性金属部材1と樹脂製のフィルム2とを密接させたマスク用部材12が形成される。なお、磁性金属シート9をエッチングするためのエッチング液は、使用する磁性金属シート9の材料に応じて適宜選択され、公知の技術を適用することができる。   Subsequently, as shown in FIG. 3C, the magnetic metal sheet 9 is wet-etched using the resist mask 11 to remove the portion of the magnetic metal sheet 9 corresponding to the opening 10 of the resist mask. 4 and the dummy through hole 5 are provided to form the magnetic metal member 1, and then the resist mask 11 is removed by dissolving it in an organic solvent, for example. Thereby, the mask member 12 in which the magnetic metal member 1 and the resin film 2 are brought into close contact with each other is formed. The etching solution for etching the magnetic metal sheet 9 is appropriately selected according to the material of the magnetic metal sheet 9 to be used, and a known technique can be applied.

また、磁性金属シート9をエッチングして貫通孔4及びダミー貫通孔5を形成する際に、複数の貫通孔4の形成領域外の予め定められた位置に基板に予め設けられた基板側アライメントマークに対して位置合わせするための図示省略のマスク側アライメントマークを同時に形成してもよい。この場合、レジストマスク11を形成する際に、マスク側アライメントマークに対応した位置にアライメントマーク用の開口を設けるとよい。   Further, when the magnetic metal sheet 9 is etched to form the through holes 4 and the dummy through holes 5, a substrate-side alignment mark provided in advance on the substrate at a predetermined position outside the formation region of the plurality of through holes 4 A mask-side alignment mark (not shown) for alignment with the mask may be formed at the same time. In this case, when the resist mask 11 is formed, an alignment mark opening may be provided at a position corresponding to the mask side alignment mark.

上記ステップS2は、磁性金属部材1の複数の貫通孔4及びダミー貫通孔5を内包する大きさの開口8を設けたインバー又はインバー合金等からなる枠状のフレーム3の一端面3aにマスク用部材12を張架して、該フレーム3の一端面3aに磁性金属部材1の周縁部を接合する工程である。以下、図4を参照して詳細に説明する。   The above step S2 is used for masking one end surface 3a of the frame-like frame 3 made of invar or invar alloy provided with openings 8 having a size including the plurality of through holes 4 and dummy through holes 5 of the magnetic metal member 1. In this step, the member 12 is stretched and the peripheral edge portion of the magnetic metal member 1 is joined to the one end surface 3 a of the frame 3. Hereinafter, this will be described in detail with reference to FIG.

先ず、図4(a)に示すように、磁性金属部材1の周縁部に対応したフィルム2の部分に、例えばKrF248nmのエキシマレーザ、又はYAGレーザの第3高調波や第4高調波を使用して、波長が400nm以下のレーザ光Lを照射し、当該部分のフィルム2をアブレーションして除去する。   First, as shown in FIG. 4A, for example, a KrF 248 nm excimer laser or a third harmonic or a fourth harmonic of a YAG laser is used for the portion of the film 2 corresponding to the peripheral edge of the magnetic metal member 1. Then, the laser beam L having a wavelength of 400 nm or less is irradiated to ablate and remove the portion of the film 2.

次に、図4(b)に示すように、マスク用部材12を該マスク用部材12の面に平行な側方(矢印方向)にマスク用部材12が撓まない程度の大きさのテンションをかけた状態でフレーム3の上方に位置付ける。   Next, as shown in FIG. 4B, the mask member 12 is tensioned so as not to bend the mask member 12 in the side parallel to the surface of the mask member 12 (in the direction of the arrow). It is positioned above the frame 3 in the hung state.

さらに、図4(c)に示すように、マスク用部材12をその面に平行な側方にテンションをかけた状態でフレーム3の一端面3aに張架し、磁性金属部材1の周縁部とフレーム3とをスポット溶接する。   Further, as shown in FIG. 4 (c), the mask member 12 is stretched on one end surface 3a of the frame 3 in a state in which tension is applied in the side parallel to the surface, and the peripheral portion of the magnetic metal member 1 is Spot welding is performed on the frame 3.

上記ステップS3は、貫通孔4内の薄膜パターンに対応した位置のフィルム2の部分にレーザ光Lを照射して薄膜パターンと形状寸法の同じ開口パターン6を形成する工程である。以下、図5を参照して詳細に説明する。   Step S3 is a step of irradiating the portion of the film 2 at a position corresponding to the thin film pattern in the through hole 4 with the laser light L to form an opening pattern 6 having the same shape and dimension as the thin film pattern. Hereinafter, this will be described in detail with reference to FIG.

先ず、図5(a)に示すように、形成しようとする薄膜パターンに対応した位置にレーザ光Lの照射目標となる基準パターン13を形成した基準基板14の、該基準パターン13を形成した面13aとは反対側の平滑面14bの上方に、フィルム2側を下にしたマスク用部材12を位置付け、基準基板14に予め設けられた基板側アライメントマークとマスク用部材12に設けられたマスク側アライメントマークを使用してマスク用部材12を基準基板14に対してアライメントする。   First, as shown in FIG. 5A, the surface of the reference substrate 14 on which the reference pattern 13 that is the irradiation target of the laser beam L is formed at the position corresponding to the thin film pattern to be formed, on which the reference pattern 13 is formed. The mask member 12 with the film 2 side down is positioned above the smooth surface 14b opposite to 13a, and the mask side provided on the mask member 12 and the substrate side alignment mark provided in advance on the reference substrate 14 The mask member 12 is aligned with the reference substrate 14 using the alignment mark.

次いで、図5(b)に示すように、マスク用部材12のフィルム2を基準基板14の平滑面14bに密接させる。このとき、上記フィルム2と基準基板14の平滑面14bとの間に液膜を介在させて液膜のメニスカスを形成し、ラプラス圧力によって発生する吸着力によりフィルム2と基準基板14とを密着させてもよい。この場合、液膜の存在により、後の開口パターン6のレーザ加工工程において、開口パターン6の基準基板14側の縁部に切り残り(バリ)が発生するのを回避することができる。   Next, as shown in FIG. 5B, the film 2 of the mask member 12 is brought into close contact with the smooth surface 14 b of the reference substrate 14. At this time, a liquid film is formed between the film 2 and the smooth surface 14b of the reference substrate 14 to form a meniscus of the liquid film, and the film 2 and the reference substrate 14 are brought into close contact by the adsorption force generated by the Laplace pressure. May be. In this case, due to the presence of the liquid film, it is possible to avoid the occurrence of uncut (burrs) at the edge of the opening pattern 6 on the reference substrate 14 side in the subsequent laser processing step of the opening pattern 6.

続いて、図5(c)に示すように、基準基板14とレーザ照射装置とを基準基板14の面に平行な面内をXYの2次元方向に相対的にステップ移動しながら、基準基板14の基準パターン13を狙って、照射面積が薄膜パターンと同じになるように整形されたエネルギー密度が1J/cm〜20J/cmの、例えばKrF248nmのエキシマレーザ、又はYAGレーザの第3高調波や第4高調波のレーザ光Lを照射し、フィルム2をアブレーションして開口パターン6を形成する。この場合、開口パターン6は複数ショットのレーザ照射により行うとよい。 Subsequently, as shown in FIG. 5C, the reference substrate 14 and the laser irradiation apparatus are moved stepwise in the XY two-dimensional direction within a plane parallel to the surface of the reference substrate 14. aiming the reference pattern 13, the third harmonic of the irradiation area is the energy density which is formatted to be the same as the thin film pattern of 1J / cm 2 ~20J / cm 2 , for example excimer lasers KrF248nm or YAG laser, Or the fourth harmonic laser beam L is applied, and the film 2 is ablated to form the opening pattern 6. In this case, the opening pattern 6 may be performed by laser irradiation of a plurality of shots.

ここで、フィルム2、例えばポリイミドは、熱膨張係数が3〜5×10−5/℃であり、磁性金属部材1のインバー又はインバー合金の熱膨張係数に比べて1桁大きい。したがって、200℃〜300℃で硬化された後、室温まで冷却されたフィルム2には、上記熱膨張係数の差により、面に平行な方向に引張応力が働いている。この場合、マスク用部材12形成時には、フィルム2に働く引張応力が面内でバランスしているため、図7(a)に示すように貫通孔4及びダミー貫通孔5の形状及び位置は、設計値と略同じ状態に維持されている。 Here, the film 2, for example, polyimide, has a thermal expansion coefficient of 3 to 5 × 10 −5 / ° C., which is one digit larger than the thermal expansion coefficient of Invar or Invar alloy of the magnetic metal member 1. Accordingly, the film 2 cured at 200 ° C. to 300 ° C. and then cooled to room temperature is subjected to tensile stress in a direction parallel to the surface due to the difference in thermal expansion coefficient. In this case, since the tensile stress acting on the film 2 is balanced in the plane when the mask member 12 is formed, the shapes and positions of the through holes 4 and the dummy through holes 5 are designed as shown in FIG. It is kept in the same state as the value.

しかしながら、フィルム2に上記開口パターン6が形成されると、上記応力バランスが崩れてフィルム2は縮もうとする。特に、開口パターン6が形成されていない周辺領域のフィルム2の収縮量は大きく、中央部よりも周辺部の方が貫通孔4及び開口パターン6の変形量が大きくなる。例えば、図7(a)に示すように、Y方向に長いストライプ状の複数の貫通孔4をその長軸に平行に、X方向に並べて形成したマスク用部材12の場合、同図(b)に示すように上記変形量は、X方向の外寄りに位置する貫通孔4及び開口パターン6ほど大きくなる。   However, when the opening pattern 6 is formed in the film 2, the stress balance is lost and the film 2 tends to shrink. In particular, the shrinkage amount of the film 2 in the peripheral region where the opening pattern 6 is not formed is large, and the deformation amount of the through hole 4 and the opening pattern 6 is larger in the peripheral portion than in the central portion. For example, as shown in FIG. 7A, in the case of a mask member 12 in which a plurality of stripe-shaped through holes 4 elongated in the Y direction are arranged in parallel to the major axis in the X direction, FIG. As shown in FIG. 3, the amount of deformation increases as the through hole 4 and the opening pattern 6 are located outward in the X direction.

そこで、本発明の蒸着マスクの製造方法においては、ダミー開口パターン7を形成するステップS4が実施される。
図6は上記ステップS4におけるダミー開口パターン7を形成する工程を示す説明図である。このステップS4においては、全ての開口パターン6の形成が終了すると、例えば同図(a)に示す左側のダミー貫通孔5内の予め定められた位置にダミー開口パターン7がレーザ加工される。その後、同図(b)に示すように、右側のダミー貫通孔5内の予め定められた位置にダミー開口パターン7がレーザ加工される。これにより、開口パターン6及び貫通孔4の上記変形が制御される。
Therefore, in the method for manufacturing a vapor deposition mask of the present invention, step S4 for forming the dummy opening pattern 7 is performed.
FIG. 6 is an explanatory diagram showing the process of forming the dummy opening pattern 7 in step S4. In step S4, when all the opening patterns 6 are formed, the dummy opening pattern 7 is laser processed at a predetermined position in the left dummy through hole 5 shown in FIG. Thereafter, as shown in FIG. 5B, the dummy opening pattern 7 is laser processed at a predetermined position in the right dummy through hole 5. Thereby, the said deformation | transformation of the opening pattern 6 and the through-hole 4 is controlled.

より詳細には、図7(c)に示すように、ダミー貫通孔5内のフィルム2にダミー貫通孔5の長軸に平行なストライプ状のダミー開口パターン7が形成される。これにより、マスク用部材12の蒸着に有効な中央領域は、その周辺領域に位置するフィルム2の縮もうとする力から解放され、上記中央領域に位置する複数の貫通孔4及び開口パターン6の変形が抑制される。したがって、上記のようなダミー開口パターン7の形成によって、貫通孔4及び開口パターン6の形状及び位置の調整が可能となる。この場合、ダミー開口パターン7の面積(ストライプの長さ)、位置及び個数の少なくとも一つを適宜制御することにより、上記変形を制御することができる。なお、ダミー開口パターン7の面積(ストライプの長さ)、位置及び個数は、実験により、又は理論解析により決定することができる。このようにして、図1に示す本発明による蒸着マスクが完成する。   More specifically, as shown in FIG. 7C, a stripe-shaped dummy opening pattern 7 parallel to the long axis of the dummy through hole 5 is formed in the film 2 in the dummy through hole 5. As a result, the central region effective for vapor deposition of the mask member 12 is released from the force of the film 2 located in the peripheral region, and the plurality of through-holes 4 and the opening pattern 6 located in the central region are released. Deformation is suppressed. Therefore, the formation and position of the through holes 4 and the opening patterns 6 can be adjusted by forming the dummy opening patterns 7 as described above. In this case, the deformation can be controlled by appropriately controlling at least one of the area (stripe length), position, and number of the dummy opening patterns 7. The area (stripe length), position, and number of the dummy opening patterns 7 can be determined by experiment or theoretical analysis. In this way, the vapor deposition mask according to the present invention shown in FIG. 1 is completed.

以上の説明においては、磁性金属部材1にフレーム3を接合してマスクを支持する場合について述べたが、フレーム3はなくてもよい。   In the above description, the case where the frame 3 is joined to the magnetic metal member 1 to support the mask has been described, but the frame 3 may be omitted.

また、以上の説明においては、単位の蒸着マスクについて述べたが、本発明はこれに限られず、大面積の基板に複数のパネルを多面付けして形成するための蒸着マスクにも適用することができる。この場合、基板上に多面付けされた各パネルに対応して本発明による単位の蒸着マスクを配置するとよい。   In the above description, the vapor deposition mask of the unit has been described. However, the present invention is not limited to this, and can be applied to a vapor deposition mask for forming a plurality of panels on a large area substrate. it can. In this case, it is preferable to arrange a vapor deposition mask of a unit according to the present invention corresponding to each panel multi-faced on the substrate.

1…磁性金属部材
2…フィルム
3…フレーム
4…貫通孔
5…ダミー貫通孔
6…開口パターン
7…ダミー開口パターン
DESCRIPTION OF SYMBOLS 1 ... Magnetic metal member 2 ... Film 3 ... Frame 4 ... Through-hole 5 ... Dummy through-hole 6 ... Opening pattern 7 ... Dummy opening pattern

Claims (8)

基板に蒸着される薄膜パターンに対応して該薄膜パターンと形状寸法の同じ開口パターンを形成した樹脂製のフィルムと、前記開口パターンを内包する大きさの貫通孔を形成した薄板状の磁性金属部材とを密接させた構造の蒸着マスクであって、
前記貫通孔を内包する蒸着有効領域外の前記磁性金属部材の部分にダミー貫通孔を設け、該ダミー貫通孔内の前記フィルムに、前記フィルムと前記磁性金属部材との間の熱膨張の差により発生する前記開口パターン及び前記貫通孔の変形を制御するためのダミー開口パターンを設けたことを特徴とする蒸着マスク。
A thin plate-like magnetic metal member having a resin film formed with an opening pattern having the same shape and dimension as the thin film pattern deposited on the substrate, and a through-hole having a size including the opening pattern Is a vapor deposition mask with a structure closely in contact with,
A dummy through hole is provided in a portion of the magnetic metal member outside the vapor deposition effective region including the through hole, and the film in the dummy through hole has a thermal expansion difference between the film and the magnetic metal member. A vapor deposition mask comprising a dummy opening pattern for controlling the generated opening pattern and deformation of the through hole.
前記磁性金属部材には、複数の前記貫通孔が並べて設けられており、該複数の貫通孔の並び方向の両側に前記ダミー貫通孔が設けられていることを特徴とする請求項1記載の蒸着マスク。   2. The vapor deposition according to claim 1, wherein the magnetic metal member is provided with a plurality of the through holes arranged side by side, and the dummy through holes are provided on both sides in the arrangement direction of the plurality of through holes. mask. 前記ダミー貫通孔内には、少なくとも一つの前記ダミー開口パターンが設けられていることを特徴とする請求項1又は2記載の蒸着マスク。   The vapor deposition mask according to claim 1, wherein at least one dummy opening pattern is provided in the dummy through hole. 前記貫通孔及び前記ダミー貫通孔を内包する大きさの開口を有する枠状のフレームの一端面に前記磁性金属部材を接合したことを特徴とする請求項1〜3のいずれか1項に記載の蒸着マスク。   4. The magnetic metal member according to claim 1, wherein the magnetic metal member is joined to one end surface of a frame-like frame having an opening having a size including the through hole and the dummy through hole. Deposition mask. 基板に蒸着される薄膜パターンに対応して該薄膜パターンと形状寸法の同じ開口パターンを形成した樹脂製のフィルムと、前記開口パターンを内包する大きさの貫通孔を形成した薄板状の磁性金属部材とを密接させた構造の蒸着マスクの製造方法であって、
蒸着のための有効領域内に貫通孔を設け、前記有効領域外にダミー貫通孔を設けた薄板状の磁性金属部材の一面に樹脂性のフィルムを密接させた構造のマスク用部材を形成する第1段階と、
前記貫通孔内の前記フィルムを貫通させて前記開口パターンを形成する第2段階と、
前記ダミー貫通孔内の前記フィルムを貫通させて前記ダミー開口パターンを形成する第3段階と、
含むことを特徴とする蒸着マスクの製造方法。
A thin plate-like magnetic metal member having a resin film formed with an opening pattern having the same shape and dimension as the thin film pattern deposited on the substrate, and a through-hole having a size including the opening pattern And a method of manufacturing a vapor deposition mask having a structure in close contact with
A mask member having a structure in which a through-hole is provided in an effective area for vapor deposition and a resinous film is in close contact with one surface of a thin plate-like magnetic metal member provided with a dummy through-hole outside the effective area is formed. One step,
A second step of forming the opening pattern by penetrating the film in the through hole;
A third step of forming the dummy opening pattern by penetrating the film in the dummy through hole;
A method of manufacturing a vapor deposition mask, comprising:
前記ダミー開口パターンの面積、個数及び位置の少なくともいずれか一つを制御して、前記フィルムと前記磁性金属部材との熱膨張の差により発生する前記開口パターン及び前記貫通孔の変形を制御することを特徴とする請求項5記載の蒸着マスクの製造方法。   Controlling at least one of the area, number, and position of the dummy opening pattern to control deformation of the opening pattern and the through hole caused by a difference in thermal expansion between the film and the magnetic metal member. The method of manufacturing a vapor deposition mask according to claim 5. 前記ダミー貫通孔は、前記磁性金属部材に並べて設けられた複数の前記貫通孔の並び方向の両側に設けられていることを特徴とする請求項5又は6記載の蒸着マスクの製造方法。   The method for manufacturing a vapor deposition mask according to claim 5 or 6, wherein the dummy through holes are provided on both sides in the arrangement direction of the plurality of through holes provided side by side on the magnetic metal member. 前記第1段階と前記第2段階との間に、前記貫通孔及び前記ダミー貫通孔を内包する大きさの開口を有する枠状のフレームの一端面に、前記マスク用部材の前記磁性金属部材を接合する段階を含むことを特徴とする請求項5〜7のいずれか1項に記載の蒸着マスクの製造方法。   Between the first stage and the second stage, the magnetic metal member of the mask member is disposed on one end surface of a frame-like frame having an opening having a size including the through hole and the dummy through hole. The method for manufacturing a vapor deposition mask according to any one of claims 5 to 7, further comprising a step of bonding.
JP2012284936A 2012-12-27 2012-12-27 Vapor deposition mask and manufacturing method thereof Active JP5976527B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012284936A JP5976527B2 (en) 2012-12-27 2012-12-27 Vapor deposition mask and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012284936A JP5976527B2 (en) 2012-12-27 2012-12-27 Vapor deposition mask and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2014125671A true JP2014125671A (en) 2014-07-07
JP5976527B2 JP5976527B2 (en) 2016-08-23

Family

ID=51405418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012284936A Active JP5976527B2 (en) 2012-12-27 2012-12-27 Vapor deposition mask and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP5976527B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105714247A (en) * 2016-04-01 2016-06-29 昆山允升吉光电科技有限公司 Mask plate assembly for evaporation of OLED
JP2016130348A (en) * 2015-01-14 2016-07-21 大日本印刷株式会社 Method of manufacturing vapor deposition mask and method of manufacturing organic semiconductor element
WO2018051443A1 (en) * 2016-09-14 2018-03-22 シャープ株式会社 Mask sheet, deposition mask, and display panel manufacturing method
KR20190013852A (en) 2016-05-26 2019-02-11 다이니폰 인사츠 가부시키가이샤 A deposition mask, a mask with a frame, a method of manufacturing an organic semiconductor device, and a method of manufacturing an organic EL display
CN109428012A (en) * 2017-09-04 2019-03-05 三星显示有限公司 Equipment for manufacturing display device
CN110234783A (en) * 2017-01-31 2019-09-13 堺显示器制品株式会社 Manufacturing method, the manufacturing method of deposition mask and organic semiconductor device of deposition mask
WO2019186629A1 (en) * 2018-03-26 2019-10-03 シャープ株式会社 Vapor deposition mask, vapor deposition mask set, vapor deposition mask manufacturing method, vapor deposition mask set manufacturing method, and display device manufacturing method
CN110592527A (en) * 2018-06-12 2019-12-20 三星显示有限公司 Deposition mask
JP2020056109A (en) * 2019-11-07 2020-04-09 大日本印刷株式会社 Vapor deposition mask and method for manufacturing vapor deposition mask
CN112030102A (en) * 2016-02-10 2020-12-04 鸿海精密工业股份有限公司 Method for manufacturing vapor deposition mask

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002060927A (en) * 2000-08-10 2002-02-28 Toray Ind Inc Mask for thin film pattern deposition
JP2004190057A (en) * 2002-12-09 2004-07-08 Nippon Filcon Co Ltd Mask for forming thin film pattern of lamination structure comprising patterned mask film and supporting body, and its manufacturing method
JP2004281339A (en) * 2003-03-19 2004-10-07 Tohoku Pioneer Corp Deposition mask, organic el panel, method for manufacturing organic el panel
JP2004296436A (en) * 2003-03-13 2004-10-21 Toray Ind Inc Organic electroluminescent device, and manufacturing method of the same
JP2005163111A (en) * 2003-12-02 2005-06-23 Sony Corp Vapor deposition mask, and its production method
JP2005519187A (en) * 2002-02-14 2005-06-30 スリーエム イノベイティブ プロパティズ カンパニー Circuit working aperture mask
JP2009041061A (en) * 2007-08-08 2009-02-26 Sony Corp Method for manufacturing mask for vapor deposition

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002060927A (en) * 2000-08-10 2002-02-28 Toray Ind Inc Mask for thin film pattern deposition
JP2005519187A (en) * 2002-02-14 2005-06-30 スリーエム イノベイティブ プロパティズ カンパニー Circuit working aperture mask
JP2004190057A (en) * 2002-12-09 2004-07-08 Nippon Filcon Co Ltd Mask for forming thin film pattern of lamination structure comprising patterned mask film and supporting body, and its manufacturing method
JP2004296436A (en) * 2003-03-13 2004-10-21 Toray Ind Inc Organic electroluminescent device, and manufacturing method of the same
JP2004281339A (en) * 2003-03-19 2004-10-07 Tohoku Pioneer Corp Deposition mask, organic el panel, method for manufacturing organic el panel
JP2005163111A (en) * 2003-12-02 2005-06-23 Sony Corp Vapor deposition mask, and its production method
JP2009041061A (en) * 2007-08-08 2009-02-26 Sony Corp Method for manufacturing mask for vapor deposition

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016130348A (en) * 2015-01-14 2016-07-21 大日本印刷株式会社 Method of manufacturing vapor deposition mask and method of manufacturing organic semiconductor element
CN112030102A (en) * 2016-02-10 2020-12-04 鸿海精密工业股份有限公司 Method for manufacturing vapor deposition mask
CN112030102B (en) * 2016-02-10 2022-12-06 鸿海精密工业股份有限公司 Method for manufacturing vapor deposition mask
CN105714247A (en) * 2016-04-01 2016-06-29 昆山允升吉光电科技有限公司 Mask plate assembly for evaporation of OLED
KR20190013852A (en) 2016-05-26 2019-02-11 다이니폰 인사츠 가부시키가이샤 A deposition mask, a mask with a frame, a method of manufacturing an organic semiconductor device, and a method of manufacturing an organic EL display
CN114959565A (en) * 2016-05-26 2022-08-30 大日本印刷株式会社 Vapor deposition mask, vapor deposition mask with frame, method for manufacturing organic semiconductor element, and method for manufacturing organic EL display
WO2018051443A1 (en) * 2016-09-14 2018-03-22 シャープ株式会社 Mask sheet, deposition mask, and display panel manufacturing method
CN110234783A (en) * 2017-01-31 2019-09-13 堺显示器制品株式会社 Manufacturing method, the manufacturing method of deposition mask and organic semiconductor device of deposition mask
CN110234783B (en) * 2017-01-31 2021-09-21 堺显示器制品株式会社 Vapor deposition mask, and method for manufacturing organic semiconductor element
CN109428012A (en) * 2017-09-04 2019-03-05 三星显示有限公司 Equipment for manufacturing display device
CN109428012B (en) * 2017-09-04 2023-07-18 三星显示有限公司 Apparatus for manufacturing display device
WO2019186629A1 (en) * 2018-03-26 2019-10-03 シャープ株式会社 Vapor deposition mask, vapor deposition mask set, vapor deposition mask manufacturing method, vapor deposition mask set manufacturing method, and display device manufacturing method
CN110592527A (en) * 2018-06-12 2019-12-20 三星显示有限公司 Deposition mask
CN110592527B (en) * 2018-06-12 2023-09-29 三星显示有限公司 Deposition mask
JP2020056109A (en) * 2019-11-07 2020-04-09 大日本印刷株式会社 Vapor deposition mask and method for manufacturing vapor deposition mask
JP7047828B2 (en) 2019-11-07 2022-04-05 大日本印刷株式会社 Vapor deposition mask and manufacturing method of vapor deposition mask

Also Published As

Publication number Publication date
JP5976527B2 (en) 2016-08-23

Similar Documents

Publication Publication Date Title
JP5976527B2 (en) Vapor deposition mask and manufacturing method thereof
JP6142386B2 (en) Manufacturing method of vapor deposition mask
KR102148970B1 (en) Deposition mask production method and laser processing apparatus
JP6142194B2 (en) Vapor deposition mask manufacturing method and vapor deposition mask
JP6510126B2 (en) Method of manufacturing vapor deposition mask, vapor deposition mask, and method of manufacturing organic semiconductor device
JP6078818B2 (en) Film-forming mask and film-forming mask manufacturing method
US10920311B2 (en) Deposition mask, method for manufacturing the same, and method for repairing the same
JP5958824B2 (en) Manufacturing method of vapor deposition mask
CN104532183B (en) The preparation method of high-precision mask plate
WO2015053250A1 (en) Film formation mask and production method therefor
JP6240960B2 (en) Method for manufacturing film formation mask and film formation mask
JP6163376B2 (en) Method for manufacturing film formation mask and film formation mask
JP2015151579A (en) Method for manufacturing vapor deposition mask device, vapor deposition mask with substrate, and laminate
JP2014091860A (en) Production method of vapor deposition mask
KR20240041800A (en) Mask assembly and manufacturing method for the same
JP2014101539A (en) Production method of vapor deposition mask
JP2019151936A (en) Method for manufacturing vapor deposition mask device, vapor deposition mask having substrate, and laminate

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150716

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160323

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160412

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160506

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160621

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160720

R150 Certificate of patent or registration of utility model

Ref document number: 5976527

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250