KR20210114337A - Method for manufacturing deposition mask unit - Google Patents

Abstract

The present invention is to provide a method for efficiently, in high yield or at low cost, manufacturing a deposition mask unit. The method comprises: forming a deposition mask having a plurality of first openings on a support substrate; forming a first resist mask covering the plurality of first openings; forming a second resist mask having a second opening on the first resist mask such that the first resist mask is exposed through the second opening; arranging a support frame having a window on the support substrate so that the window overlaps the plurality of first openings; and forming a contact portion for fixing the deposition mask and the support frame by using a plating method.

Description

Method of manufacturing deposition mask unit {METHOD FOR MANUFACTURING DEPOSITION MASK UNIT}

One of the embodiments of the present invention relates to a method of manufacturing a deposition mask unit.

A liquid crystal display device and an organic electroluminescence display are mentioned as an example of a flat panel type display device. These display devices are structures in which thin films made of various materials, such as insulators, semiconductors, and conductors, are laminated on a substrate, and these thin films are appropriately patterned and connected to exhibit functions as a display device.

The method of forming a thin film is classified broadly into a gas phase method, a liquid phase method, and a solid phase method. The vapor phase method is classified into a physical vapor phase method and a chemical vapor phase method, and a vapor deposition method is known as a representative example of the former. Among the vapor deposition methods, the most convenient method is vacuum vapor deposition, heating the material under high vacuum to sublimate or evaporate the material (hereinafter, sublimation and evaporation are generally referred to as vaporization) to generate vapor of the material, and this vapor is the target area A thin film of material can be obtained by solidifying and depositing in (hereinafter, vapor deposition region). At this time, in order to selectively form a thin film in the deposition region and not deposit material in other regions (hereinafter, non-evaporated regions), a mask for physically shielding the non-evaporated region is used (see Patent Documents 1 and 2). ). The mask is called a vapor deposition mask or the like.

Japanese Patent Laid-Open No. 2009-87840 Japanese Patent Laid-Open No. 2013-209710

One of the embodiments of the present invention is to provide a method for manufacturing a deposition mask unit as one of the problems. For example, one of the problems of one embodiment of the present invention is to provide a method for efficiently manufacturing a vapor deposition mask unit at a high yield or at a low cost.

One of the embodiments of the present invention is a method for manufacturing a vapor deposition mask unit. The method includes: forming a deposition mask having a plurality of first openings on a support substrate; forming a first resist mask covering the plurality of first openings; forming a second resist mask having a second opening; 1 forming a resist mask on the first resist mask so that the first resist mask is exposed from the second opening, disposing a support frame having a window on the support substrate so that the window overlaps the plurality of first openings, and a deposition mask and the support frame It includes forming a connection portion for fixing the metal using a plating method.

One of the embodiments of the present invention is a method for manufacturing a vapor deposition mask unit. This method comprises: forming a deposition mask having a plurality of first openings on a support substrate; forming a resist mask on the deposition mask; a thin film region overlapping the resist mask with the plurality of first openings; processing into an enclosing thick film region, disposing a support frame having a window on a support substrate so that the window overlaps the thin film region and the thick film region, and forming a connection portion for fixing the deposition mask and the support frame using a plating method include that

One of the embodiments of the present invention is a method for manufacturing a vapor deposition mask unit. This method comprises forming on a support substrate a plurality of deposition masks each having a plurality of first openings, a plurality of first resist masks respectively corresponding to the plurality of deposition masks, and a plurality of first resist masks respectively corresponding to the plurality of deposition masks. forming to cover the first opening, a plurality of second resist masks each corresponding to a plurality of first resist masks, each having a second opening, each corresponding to the corresponding first resist mask being exposed from the second opening Forming on the first resist mask, a support frame having a plurality of windows corresponding to the plurality of first resist masks and the plurality of second resist masks overlapping the first resist mask and the second resist mask respectively corresponding to the windows and arranging on a supporting substrate in such a manner as to form a connecting portion for fixing the plurality of deposition masks and the supporting frame by using a plating method.

1A is a schematic top view of a deposition apparatus to which a deposition mask unit manufactured by the method according to one of the embodiments of the present invention is applicable;
1B is a schematic side view of a deposition apparatus to which a deposition mask unit manufactured by the method according to one of the embodiments of the present invention is applicable;
Fig. 2 is a schematic top view of a deposition mask unit manufactured by the method according to one of the embodiments of the present invention.
3 is a schematic cross-sectional view of a deposition mask unit manufactured by the method according to one of the embodiments of the present invention.
Fig. 4A is a schematic cross-sectional view of a deposition mask unit manufactured by the method according to one of the embodiments of the present invention.
4B is a schematic cross-sectional view of a deposition mask unit manufactured by the method according to one of the embodiments of the present invention.
5A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 5B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 5C is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 6A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 6B is a schematic cross-sectional view and a top view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 7A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 7B is a schematic top view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 8 is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 9A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 9B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 9C is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 10A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 10B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 11 is a schematic top view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
12A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
12B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
12C is a schematic cross-sectional view showing a method for manufacturing a deposition mask unit according to one embodiment of the present invention.
13A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
13B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
13C is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 14A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 14B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 15A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 15B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 16A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 16B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention.
Fig. 17A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 17B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 18A is a schematic cross-sectional view showing a method for manufacturing a conventional deposition mask unit;
Fig. 18B is a schematic cross-sectional view showing a method for manufacturing a conventional deposition mask unit;
19A is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;
Fig. 19B is a schematic cross-sectional view showing a method of manufacturing a deposition mask unit according to one embodiment of the present invention;

EMBODIMENT OF THE INVENTION Hereinafter, each embodiment of this invention is demonstrated, referring drawings etc. However, this invention can be implemented in various aspects in the range which does not deviate from the summary, and is not interpreted limited to the description of embodiment illustrated below.

In order to make the description clearer, the drawings may be schematically expressed with respect to the width, thickness, shape, etc. of each part compared to the actual aspect, but it is merely an example and does not limit the interpretation of the present invention. In this specification and each drawing, the same code|symbol is attached|subjected to the element provided with the function similar to that demonstrated with respect to the previously mentioned drawing, and overlapping description may be abbreviate|omitted.

In the present specification and claims, in expressing the aspect of arranging another structure on a certain structure, if it is simply expressed as "on", unless otherwise specified, another structure is placed directly on top of the structure so as to be in contact with a certain structure. It shall include both the case of arrangement|positioning and the case of arrange|positioning another structure with another structure interposed above a certain structure.

Hereinafter, the expression "that a certain structure is exposed from another structure" means a mode in which a part of a certain structure is not covered by another structure, and the part not covered by this other structure is not covered by another structure Covering is also included.

Hereinafter, the manufacturing method of the vapor deposition mask unit 100 which concerns on one Embodiment of this invention is demonstrated.

1. Deposition apparatus

The deposition mask unit 100 manufactured by the present manufacturing method is used to selectively form a film on a target deposition area when a film containing an organic compound, an inorganic compound, or an organic compound and an inorganic compound is formed by the deposition method. Can be used. 1A and 1B, a schematic top view and a side view of a typical vapor deposition apparatus used in film formation by vapor deposition are shown. The deposition apparatus is composed of a plurality of chambers having various functions. One of the chambers is a deposition chamber 160 shown in FIG. 1A, and the deposition chamber 160 is partitioned from an adjacent chamber and a load lock door 162, and the inside is in a high vacuum decompression state, or nitrogen or argon or the like. It is configured to remain filled with an inert gas. Accordingly, a decompression device, a gas intake/exhaust mechanism, and the like (not shown) are connected to the deposition chamber 160 .

The deposition chamber 160 provides a space in which an object on which a film, such as a substrate, is formed can be accommodated. In the example shown in FIGS. 1A and 1B , the deposition source 164 is disposed under the substrate 180 , and the deposition source 164 is filled with a material to be deposited. In the deposition source 164, the material is heated and vaporized, and when the vapor of the material reaches the surface of the substrate 180 through the opening 102a (to be described later) of the deposition mask unit 100, it is cooled and solidified, and the material It is deposited to provide a film of material on the substrate 180 (on the underside of the substrate 180 in FIG. 1B ). In the example shown in Fig. 1A, an evaporation source 164 (also referred to as a linear source) having a substantially rectangular shape and disposed along one side of the substrate 180 is provided. It is possible to have a shape of , and may be a deposition source 164, a so-called point source, overlapping the center of gravity of the substrate 180 . In the case of the point source, the relative positions of the substrate 180 and the deposition source 164 are fixed, and a mechanism for rotating the substrate 180 may be provided.

When the linear source type deposition source 164 is used, the deposition chamber 160 is configured such that the substrate 180 and the deposition source 164 move relatively. In FIG. 1A , an example in which the deposition source 164 is fixed and the substrate 180 moves thereon is illustrated. As shown in FIG. 1B , in the deposition chamber 160 , a holder 170 for holding the substrate 180 and the deposition mask unit 100 and a moving mechanism 168 for moving the holder 170 are additionally included. , a shutter 166 and the like are provided. The positional relationship between the substrate 180 and the deposition mask unit 100 is maintained by the holder 170 , and the substrate 180 and the deposition mask unit 100 are moved to the deposition source 164 by the moving mechanism 168 . Prizes can be moved. The shutter 166 is provided on the evaporation source 164 to shield the vapor of the material or to allow the substrate 180 to reach, and opening and closing is controlled by a control device not shown. Although not shown, the deposition chamber 160 includes a sensor for monitoring the deposition rate of the material, a deposition preventing plate for preventing contamination by the material, and a pressure gauge for monitoring the pressure in the deposition chamber 160 .

2. Deposition mask unit

Fig. 2 is a schematic top view of the deposition mask unit 100, and Fig. 3 is a schematic cross-sectional view taken along a chain line A-A' in Fig. 2 . The deposition mask unit 100 has at least one or a plurality of deposition masks 102 . In the following description, an example in which one deposition mask unit 100 has a plurality of deposition masks 102 will be used.

Each deposition mask 102 includes a plurality of openings 102a penetrating the deposition mask 102 . In each deposition mask 102, a region other than the opening 102a is called a non-opening part. The non-opening portion surrounds the opening 102a. The deposition mask unit 100 also has a support frame 110 that is connected to the deposition mask 102 in the non-opening portion via the connection portion 120 . The connection part 120 surrounds the plurality of openings 102a and contacts the support frame 110 and the deposition mask 102 in the non-opening part.

During deposition, the deposition mask unit 100 and the substrate 180 are disposed so that the deposition region and the opening 102a overlap, and the non-evaporation region and the non-opening portion overlap, and the vapor of the material passes through the opening 102a, A material is deposited over the deposition area. There is no restriction on the arrangement of the plurality of openings 102a, but for example, when a film is formed on each of a plurality of pixels provided in a display area of a display device, the plurality of openings 102a are formed by the pixels on the substrate 180 . It is provided to overlap with the area to be provided. Accordingly, when a plurality of pixels are arranged in a matrix form, the plurality of openings 102a are also arranged in a matrix form. When a plurality of display devices are manufactured using one deposition mask unit 100 , display areas of the plurality of display devices are formed on a large substrate 180 called mother glass. In this case, the plurality of openings 102a are provided so as to form a plurality of opening groups 102b respectively corresponding to the plurality of display areas. The distance between adjacent opening groups 102b is larger than the distance between adjacent openings 102a in each opening group 102b.

The support frame 110 has at least one window 110a (FIG. 3). When the opening 102a is provided to form the plurality of opening groups 102b, the at least one window 110a may include the plurality of windows 110a. Each window 110a is provided to overlap the plurality of openings 102a of the deposition mask 102 . That is, the plurality of openings 102a are exposed from the support frame 110 through a certain window 110a. In other words, each opening group 102b is also exposed from the support frame 110 through a certain window 110a. A part of the support frame 110 is in contact with the connection part 120 between the adjacent opening groups 102b.

A schematic cross-sectional view of a region Ra sandwiched between adjacent windows 110a and an end region Rb of the deposition mask unit 100 is shown in FIGS. 4A and 4B , respectively. As shown in FIG. 4A , the support frame 110 does not directly contact the deposition mask 102 , but is connected to the deposition mask 102 through the connection part 120 . Although not shown, the support frame 110 may overlap a part of the deposition mask 102 . The same applies to the region Rb, and as shown in FIG. 4B , the support frame 110 does not directly contact the deposition mask 102 , but is connected to the deposition mask 102 via the connecting portion 120 . Also in this region Rb, the support frame 110 may overlap a part of the deposition mask 102 .

As shown in FIGS. 4A and 4B , it is preferable that the connection part 120 does not come into contact with the upper surface of the support frame 110 . In other words, the connecting portion 120 is preferably spaced apart from the upper surface of the support frame (110). Although a method of manufacturing the deposition mask unit 100 will be described later, the connection part 120 is spaced apart from the upper surface of the support frame 110 , so that the adjacent connection parts 120 are integrated through the support frame 110 to form the support frame 110 . It is possible to prevent deformation from occurring, and to stabilize the shape of the deposition mask unit 100 . In FIGS. 4A and 4B , the uppermost layer of the connection part 120 is located on the same plane as the upper surface of the support frame 110 , but the uppermost layer of the connection part 120 may be lower than the upper surface of the support frame 110 . That is, the uppermost layer of the connection part 120 may be located between the upper surface of the support frame 110 and the deposition mask 102 .

The deposition mask 102 or the connection part 120 includes a zero-valent metal such as nickel, copper, titanium, or chromium, and preferably includes nickel. The composition of the material of the deposition mask 102 and the connecting portion 120 may be the same as each other. The support frame 110 also includes a zero-valent metal, and the metal is selected from nickel, iron, cobalt, chromium, manganese, and the like. For example, the support frame 110 may be an alloy containing iron and chromium, an alloy of iron, nickel, or manganese, or carbon may be contained in the alloy.

3. Manufacturing method of deposition mask unit

An example of a method of manufacturing the deposition mask unit 100 will be described with reference to FIGS. 5A to 17B .

3-1. Formation of the deposition mask

First, a resist mask 134 is formed on the support substrate 130 on which the release layer 132 is provided. The support substrate 130 is a substrate having a function of holding the deposition mask 102 or the support frame 110 when forming the deposition mask unit 100, and includes glass, quartz, plastic, copper, aluminum, titanium, Metals, such as iron, nickel, cobalt, chromium, molybdenum, manganese, or these alloys are included. When the deposition mask 102 contains an alloy, the alloy may be, for example, an alloy containing iron and chromium, an alloy of iron, nickel, and manganese, and carbon may be contained in the alloy. When a substrate made of glass, quartz, or plastic is used, the substrate on which a film of the above-described metal or alloy is formed may be used. As will be described later, the deposition mask 102 and the connecting portion 120 are formed using an electrolytic plating method or an electroless plating method (hereinafter, these are generally referred to as plating methods). When using the electrolytic plating method, it is preferable to use a metal substrate or an alloy substrate which can function as an electrode at the time of power feeding as the support substrate 130 . The peeling layer 132 is a functional layer for promoting peeling of the deposition mask unit 100 formed on the support substrate 130 from the support substrate, and for example, a thin metal film such as nickel, molybdenum, or tungsten may be used. can The release layer 132 may be formed by, for example, a plating method, a sputtering method, or a chemical vapor deposition (CVD) method so as to have a thickness of 20 µm or more and 200 µm or less, or 40 µm or more and 150 µm or less.

The resist mask 134 is provided in an island shape. That is, the plurality of openings 102a and the dummy pattern 106 to be described later are selectively formed in the region. For example, a negative photoresist is applied on the peeling layer 132 , and exposure is performed through a photomask so that the plurality of openings 102a and regions forming the dummy pattern 106 are selectively exposed. Alternatively, a positive photoresist is applied on the release layer 132, and exposure is performed through a photomask so that the non-opening portion is selectively exposed. Thereafter, development is performed to obtain a patterned resist mask 134 (FIG. 5A). In addition, it is preferable to form the resist mask 134 also on the outer edge of the peeling layer 132 so that the peeling layer 132 can be easily peeled off from the deposition mask unit 100 .

Next, a plating pattern is formed in an area not covered by the resist mask 134 using a plating method, and a deposition mask 102 is formed (FIG. 5B). Formation of a plating pattern may be performed in one step, and may be divided into several steps and may be performed. When carrying out in a plurality of steps, plating may be performed so that different metals are formed in different steps. In addition, plating may be performed so that the upper surface of the plating pattern may become lower than the upper surface of the resist mask 134, and may be performed so that it may become high. In the latter case, the upper surface of the plating pattern may be planarized by polishing the surface. Thereafter, the resist mask 134 is removed by etching with a stripper and/or ashing, thereby forming a deposition mask 102 having a plurality of openings 102a (Fig. 5C).

As shown in the schematic cross-sectional view of FIG. 6A , in the region Ra between the adjacent windows 110a, the dummy pattern (hereinafter, the first dummy pattern) 106-1 is peeled off at the same time as the deposition mask 102 is formed. It is formed on the layer 132 . A groove (hereinafter, referred to as a first groove) 104-1 is formed between the first dummy pattern 106-1 and the deposition mask 102, and the first dummy pattern 104-1 is formed by the first groove 104-1. 106-1) and the deposition mask 102 are spaced apart. For this reason, as shown in the schematic top view of FIG. 6B , one first dummy pattern 106 - 1 is provided so as to surround one deposition mask 102 . Since the first dummy pattern 106 - 1 and the deposition mask 102 are simultaneously formed, they may have the same composition and thickness.

The same applies to the region Rb at the end of the deposition mask unit 100, and as shown in FIG. 7A , a dummy pattern (hereinafter, a second dummy pattern) 106-2 is formed as a release layer at the same time as the deposition mask 102 is formed. (132) is formed on. A groove (hereinafter, referred to as a second groove) 104-2 is formed between the second dummy pattern 106 - 2 and the deposition mask 102 , and the second dummy pattern ( 106-2) and the deposition mask 102 are spaced apart. As shown in the schematic top view of FIG. 7B , the second dummy pattern 106 - 2 is provided to surround the plurality of deposition masks 102 . Since the second dummy pattern 106 - 2 and the deposition mask 102 are also formed at the same time, they may also have the same composition and thickness.

3-2. protection of the opening

As will be described later, the support frame 110 is disposed on the deposition mask 102 , and then the connection part 120 is formed by plating, whereby the deposition mask 102 and the support frame 110 are fixed to each other. Therefore, in order to prevent metal plating on the opening 102a when the connecting portion 120 is formed, a plurality of resist masks are used to protect the opening 102a.

Specifically, as shown in FIG. 8 , first, a film-like resist (hereinafter, a first resist film) 136 is disposed so as to cover the plurality of deposition masks 102 . The first resist film 136 includes all of the openings 102a of the plurality of deposition masks 102 and a dummy pattern ( 106).

Next, the first resist film 136 is exposed. The details of exposure in the region Ra will be described with reference to Figs. 9A to 9C. First, a first photomask 150 having a light blocking portion 150a and a light transmitting portion 150b is disposed on the support substrate 130 (refer to FIG. 9A ) on which the first resist film 136 is disposed. In the first photomask 150 , a portion of the first resist film 136 overlapping the opening 102a of the deposition mask 102 and a portion of the non-opening portion of the deposition mask 102 are exposed, and a first dummy The pattern 106 - 1 and the other part of the non-opening portion of the deposition mask 102 are disposed not to be exposed. That is, the light transmitting portion 150b overlaps the opening 102a of the deposition mask 102 and a portion of the non-opening portion, and the light blocking portion 150a overlaps the first dummy pattern 106 - 1 and another portion of the non-opening portion. placed (Fig. 9b).

The first resist film 136 is a negative resist, and includes a polymer or oligomer that is cured by light. The exposed portion 136a has greatly reduced solubility in a developer, and the exposed portion may remain after development, which will be described later. Meanwhile, the unexposed portion 136b is removed by development. The thickness of the first resist film 136 can be arbitrarily selected, for example, 20 µm or more and 100 µm or less, 30 µm or more and 100 µm or less, or 50 µm or more and 70 µm or less.

Next, before developing the first resist film 136 , a second resist film 138 is disposed on the exposed first resist film 136 ( FIG. 9C ). Subsequently, a second photomask 152 having a pattern different from that of the first photomask 150 is disposed on the second resist film 138 , and the first resist film ( 136) and the second resist film 138 are exposed. Here, the second photomask 152 is configured such that the light-transmitting portion 152b overlaps the exposed portion 136a of the first resist film 136 and overlaps a part of the non-opening portion of the deposition mask 102 described above. do. In addition, the light blocking portion 152a is provided so as to overlap the openings 102a of the plurality of deposition masks 102 , the first dummy pattern 106 - 1 , and other portions of the non-opening portions of the deposition masks 102 . However, the light-transmitting portion 152b may overlap a part of the plurality of openings 102a. Accordingly, in the second resist film 138 , the portion overlapping all or most of the opening 102a and the portion overlapping the first dummy pattern 106-1 become an unexposed portion, and the ratio of the deposition mask 102 is A portion overlapping a part of the opening is an exposure portion.

The second resist film 138 is also a negative resist, and contains a polymer or oligomer that is cured by light. The thickness of the second resist film 138 can also be arbitrarily selected, for example, 20 µm or more and 100 µm or less, 30 µm or more and 100 µm or less, or 50 µm or more and 70 µm or less.

Thereafter, the first resist film 136 and the second resist film 138 are simultaneously developed. Accordingly, the first resist film 136 and the second resist film 138 provide a plurality of first resist masks 144 and a plurality of second resist masks 146 , respectively. The plurality of first resist masks 144 each overlap a corresponding one deposition mask 102 and cover all of the openings 102a of the deposition mask 102 . However, none of the plurality of first resist masks 144 cover the first dummy pattern 106 - 1 . That is, the first dummy pattern 106 - 1 is exposed from the first resist mask 144 . On the other hand, the second resist mask 146 is provided so as to be in contact with the first resist mask 144 and to sandwich the first dummy pattern 106 - 1 exposed between two adjacent first resist masks 144 . do. When the second photomask 152 is disposed so that the light-transmitting portion 152b overlaps a portion of the plurality of openings 102a, the second resist mask 146 overlaps a portion of the plurality of openings 102a (Fig. 10b).

Therefore, when attention is paid to one deposition mask 102, as shown in the top schematic diagram of FIG. 11, the 1st resist mask 144 overlaps with the some opening 102a or the some opening group 102b. The second resist mask 146 has an opening 146a overlapping a plurality of openings 102a or a plurality of opening groups 102b, and the first resist mask 144 is exposed in the opening 146a ( see Fig. 10a). The first dummy pattern 106 - 1 surrounds the first resist mask 144 or the second resist mask 146 in a plan view, and is spaced apart therefrom through the first groove 104 - 1 . 10A, 10B, and 11 , a part of the deposition mask 102 is exposed from the first resist mask 144 and the second resist mask 146 . As will be described later, the support frame 110 and the deposition mask 102 are bonded to each other by forming the connection portion 120 on the exposed portion.

The exposure in the area|region Rb is demonstrated using cross-sectional schematic diagram of FIGS. 12A-12C. Also in this area|region Rb, the exposure of the 1st resist mask 144 and the 2nd resist mask 146 is performed using a different photomask similarly to the area|region Ra. That is, first, the first resist film 136 is exposed with the first photomask 150 interposed therebetween. In the first photomask 150 , the light transmitting portion 150b overlaps the opening 102a and a portion of the non-opening portion of the deposition mask 102 , and the light blocking portion 150a is deposited with the second dummy pattern 106 - 2 . It is configured to overlap another portion of the non-opening portion of the mask 102 (FIG. 12A).

As for the second photomask 152 used for exposure of the second resist film 138 , the light-transmitting portion 152b overlaps the exposure portion 136a of the first resist film 136 , and the deposition mask 102 . It is configured to overlap the part of the non-opening portion. In addition, the light blocking portion 152a is provided so as to overlap the openings 102a of the plurality of deposition masks 102 , the second dummy patterns 106 - 2 , and other portions of the non-opening portions of the deposition masks 102 . (Fig. 12b). However, the light-transmitting portion 152b may overlap a part of the plurality of openings 102a. Accordingly, the second resist film 138 has a portion overlapping all or most of the opening 102a , a portion overlapping the second dummy pattern 106 - 2 , and another portion overlapping the non-opening portion of the deposition mask 102 . A portion becomes an unexposed portion, and a portion overlapping with the portion of the second dummy pattern 106 - 2 becomes an exposed portion.

Therefore, by simultaneously developing the first resist film 136 and the second resist film 138 , as shown in FIG. 12C , the second dummy pattern 106 - 2 and the non-opening portion of the deposition mask 102 . Another portion is exposed from the first resist mask 144 and the second resist mask 146 . The first resist mask 144 covers the opening 102a and the portion of the non-opening portion of the deposition mask 102 . Meanwhile, the second resist mask 146 overlaps the first resist mask 144 and a portion of the non-opening portion of the deposition mask 102 . However, the second resist mask 146 may overlap a part of the opening 102a. As will be described later, a connection portion 120 is formed in a portion where the deposition mask 102 is exposed from the first resist mask 144 and the second resist mask 146, whereby the deposition mask 102 and the support frame ( 110) is joined.

Through the steps up to this point, the first resist mask 144 covering the entire opening 102a and the second resist mask 146 overlapping the part of the first resist mask 144 are formed.

3-3. Creation of support frame

The support frame 110 is formed by etching the metal plate 112 . Specifically, a resist 140 is formed on a metal plate 112 containing a metal or alloy containing nickel, iron, cobalt, chromium, manganese, or the like, and a photomask (hereinafter, referred to as a third photomask) 156 is formed. Exposure is interposed (FIG. 13A), and a resist mask 148 is formed by subsequent development (FIG. 13B). The resist 140 may be a liquid resist or a film resist. In addition, the resist 140 may be a negative type or a positive type may be sufficient as it. In the case of the negative type, as shown in Fig. 13A, the light-transmitting portion 156b overlaps the region where the support frame 110 is formed, and fills the region to be removed by etching, that is, the region where the window 110a is formed. The third photomask 156 may be designed and disposed so that the light portions 156a overlap. Thereafter, the support frame 110 is obtained by developing except for the area covered with the resist mask 148 (FIG. 13C). The resist mask 148 is then removed by stripper and/or ashing.

3-4. Arrangement of support frames and formation of joints

Next, the support frame 110 is disposed on the support substrate 130 . Specifically, the deposition mask 102 is disposed on the support substrate 130 with the release layer 132 interposed therebetween so as to overlap the first dummy pattern 106 - 1 and the second dummy pattern 106 - 2 . (Fig. 14a, Fig. 15a). That is, the support frame 110 is disposed such that one window 110a overlaps not only the plurality of openings 102a but also one first resist mask 144 and one second resist mask 146 . At this time, even if an adhesive 142 is provided on the support frame 110 and the support frame 110 is adhered to the first dummy pattern 106 - 1 and the second dummy pattern 106 - 2 with the adhesive 142 . do. As the adhesive 142 , for example, an acrylic adhesive or an epoxy adhesive may be used, or a resist film similar to that of the first resist film 136 or the second resist film 138 may be used. When a resist film is used, the thickness may be smaller than the thickness of the first resist film 136 or the second resist film 138 . Specifically, the thickness of the resist film as the adhesive 142 can be selected from the range of 1 µm or more and 20 µm or less, or 1 µm or more and 10 µm or less. When a resist film is used as an adhesive agent, the resist film does not need to be exposed in order to maintain adhesive force.

In addition, as an arbitrary structure, the protective film 149 may be formed on the upper surface of the support frame 110 (FIG. 14A, FIG. 15A). As the protective film 149 , a resist film similar to that of the first resist film 136 or the second resist film 138 may be used. In this case as well, the resist film may or may not be exposed. By forming the protective film 149 , when the connection part 120 is formed by subsequent plating, the connection part 120 is not formed on the upper surface of the support frame 110 , so that the adjacent deposition mask 102 is attached to the connection part 120 . It can be prevented from being directly connected by

Thereafter, the connection part 120 is formed using a plating method. The connecting portion 120 mainly grows from portions exposed from the first resist mask 144 and the second resist mask 146 among the non-opening portions of the support frame 110 and the deposition mask 102, and as a result, as shown in FIG. 14B and 15B , a connection portion 120 in contact with the upper surface of the non-opening portion of the deposition mask 102 and the side surface 110b constituting the window 110a of the support frame 110 is formed. Thereby, the deposition mask 102 and the support frame 110 are fixed.

Moreover, when plating is performed in the state of FIG. 15B, the plating layer 120a is formed simultaneously with the connection part 120 also on the left side of the support frame 110, ie, the outermost periphery. The plating layer 120a is not a problem in particular because it is located outside the substrate 180 in the deposition process using the deposition mask unit 100, but if necessary, the first resist mask 144 in the state of FIG. 15A Alternatively, the second resist mask 146 may be used to cover the outermost periphery, and the plating layer 120a may not be formed.

In this case, the connection part 120 is formed so as not to cover the upper surface of the second resist mask 146 . In this case, when the connection part 120 covers the upper surface of the second resist mask 146 , a defect occurs during subsequent removal of the first resist mask 144 and the second resist mask 146 with a stripper. because there is Specifically, when the first resist mask 144 and the second resist mask 146 are swelled by the stripper, their volume expands, thereby stressing the connecting portion 120 on the second resist mask 146 . This occurs, and as a result, the connection part 120 may be damaged. By forming the connection portion 120 so as not to cover the upper surface of the second resist mask 146 , this problem can be effectively suppressed.

3-5. Removal of support substrate and release layer

Thereafter, the first resist mask 144 and the second resist mask 146 are removed by etching using a stripper ( FIGS. 16A and 17A ). At this time, the protective layer 149 is also removed. In addition, the release layer 132 and the support substrate 130 are peeled off. By removing the adhesive 142 simultaneously with the peeling of the support substrate 130 and the release layer 132 or after the peeling of the support substrate 130 and the release layer 132, the adhesive 142 together with the first dummy pattern ( 106 - 1 ) and the second dummy pattern 106 - 2 are removed ( FIGS. 16B and 17B ).

Through the above process, the deposition mask unit 100 can be manufactured.

As described above, in this embodiment, the connection part 120 is formed so as not to cover the upper surface of the second resist mask 146 . For this reason, in order to secure a sufficient area for the connection part 120 to contact the support frame 110 and the deposition mask 102 and to fix the deposition mask 102 to the support frame 110 with sufficient bonding strength, first A sufficient thickness (for example, a total film thickness of 100 µm or more and 200 µm or less) is required for the first resist mask 144 and/or the second resist mask 146 .

However, when a single resist film having a large thickness is used to protect the opening 102a, the exposure time is increased, and sufficient exposure is not possible, and as a result, pinholes may occur in the resulting resist mask. . Alternatively, when two relatively small resist films (for example, the first resist film 136 and the second resist film 138) are laminated to protect the opening 102a, these resist films are applied with the same photomask. When exposed to , even if each resist film is individually exposed, both resist films inevitably cover all the openings 102a (FIG. 18A). As a result, in the process of removing the resist film after the connection portion 120 is formed, the peeling time increases and the life of the stripper decreases. This results in an increase in the manufacturing cost of the deposition mask unit 100 .

On the other hand, when a resist mask having a small film thickness is used to shorten the peeling time (for example, only the first resist mask 144 is used), an attempt is made to form the connection portion 120 in order to obtain sufficient bonding strength. On the other hand, although the contact area between the connection part 120 and the support frame 110 and the deposition mask 102 can be secured, a part of the connection part 120 is partially formed on the upper surface of the first resist mask 144 due to plating for a relatively long time. It is extended to (refer to the dotted line ellipse in FIG. 18B). As described above, the formation of such a connection part 120 causes a problem.

However, in one of the embodiments according to the present invention, as described above, two resist masks (the first resist mask 144 and the second resist mask 146 ) each having a relatively small thickness are provided for each deposition mask 102 . provided to protect the openings 102a of the , which are formed using different photomasks. Specifically, the opening 102a is protected by the first resist mask 144 , and the connecting portion 120 is connected to the first resist mask by the second resist mask 146 having a different shape from the first resist mask 144 . Growth on (144) or the second resist mask (146) is prevented. In addition, the second resist mask 146 does not overlap the opening 102a, or overlaps only a part thereof. For this reason, since the volume of the second resist mask 146 is very small compared to that of the first resist mask 144, these masks can be collectively removed in a short period of time, thereby increasing the manufacturing time and reducing the lifespan of the stripper. does not cause Therefore, by applying one of the embodiments of the present invention, the deposition mask unit can be manufactured efficiently, with high yield, or at low cost.

9A to 9C, the formation of the first resist mask 144 and the second resist mask 146 is performed by using the first resist film 136 and the second resist film 138, which are independent of each other, respectively. Although formed by a two-step exposure process, for example, as shown in Fig. 19A, a single resist film 190 having a large thickness may be formed by processing by exposure using a halftone mask. The thickness of the resist film 190 may be, for example, 100 µm or more and 200 µm or less, or 100 µm or more and 150 µm or less.

As the resist film 190, a positive resist film is used unlike the first resist film 136 and the second resist film 138 described above. The halftone mask 191 has an opening 191a, a light blocking portion 191b, and a halftone portion 191c. In the halftone mask 191 , the halftone portion 191c overlaps the plurality of openings 102a , the opening 191a overlaps the first dummy pattern 106 - 1 , and the light blocking portion 191b includes the first dummy pattern It may be formed and arranged to overlap the region between the opening 102a closest to the 106-1 and the first dummy pattern 106-1. By performing exposure through the halftone mask 191, in the resist film 190, the area|region which overlaps with the some opening part 191a is exposed from an upper surface to a lower surface. On the other hand, the area overlapping the light blocking portion 191b is left unexposed, and only the side close to the upper surface of the area overlapping the halftone portion 191c is partially exposed. Thereafter, the resist film 190 is developed, and as shown in FIG. 19B , a resist having a thin film region 194 overlapping with the plurality of openings 191a and a thick film region 196 surrounding the thin film region 194 . A mask 198 may be formed. Thereafter, it continues with the process described using FIG. 13A.

Each of the above-described embodiments as an embodiment of the present invention can be implemented in appropriate combination as long as they do not contradict each other. Moreover, based on the manufacturing method of each embodiment, addition, omission or condition change of a process by a person skilled in the art as appropriate is included in the scope of the present invention as long as the gist of the present invention is provided.

Even if it is other effect and effect different from the effect caused by the aspect of each embodiment mentioned above, what is clear from the description of this specification, or what can be predicted easily for a person skilled in the art, it is understood that it is naturally brought about by this invention. do.

100: deposition mask unit
102: deposition mask
102a: opening
102b: open mouth
104-1: first groove
104-2: second groove
106: dummy pattern
106-1: first dummy pattern
106-2: second dummy pattern
110: support frame
110a: window
110b: side
112: metal plate
120: connection part
120a: plating layer
130: support substrate
132: release layer
134: resist mask
136: first resist film
136a: exposure unit
136b: unexposed part
138: second resist film
140: resist
142: adhesive
144: first resist mask
146: second resist mask
146a: opening
148: resist mask
149: shield
150: first photomask
150a: light blocking unit
150b: light-transmitting part
152: second photomask
152a: light blocking unit
152b: light-transmitting part
156: third photomask
156a: light blocking unit
156b: light-transmitting part
160: deposition chamber
162: load lock door
164: evaporation source
166: shutter
168: moving mechanism
170: holder
180: substrate
190: resist film
191: Halftone Mask
191a: opening
191b: light blocking unit
191c: Halftone part
194: thin film region
196: thick curtain area
198: resist mask

Claims (16)

forming a deposition mask having a plurality of first openings on the support substrate;
forming a first resist mask covering the plurality of first openings;
forming a second resist mask having a second opening on the first resist mask such that the first resist mask is exposed from the second opening;
disposing a support frame having a window on the support substrate such that the window overlaps the plurality of first openings; and
and forming a connection portion for fixing the deposition mask and the support frame by using a plating method. The method of claim 1 , wherein the second resist mask is formed to cover a portion of the plurality of first openings. The method according to claim 1, wherein said forming of said connecting portion is performed such that said connecting portion is spaced apart from an upper surface of said second resist mask. The method according to claim 1, wherein an upper surface of the support frame is covered with a third resist mask such that the connection portion is spaced from the upper surface. The method of claim 1 , wherein the first resist mask and the second resist mask are formed using different photomasks. The method of claim 1 , wherein the first resist mask is formed by disposing a first resist film on the plurality of first openings, exposing the first resist film, and developing the exposed first resist film; ,
The second resist mask is formed by disposing a second resist film on the first resist film, exposing the second resist film, and developing the exposed second resist film;
wherein said developing of said first resist film and said second resist film is performed simultaneously. The method of claim 1 , further comprising forming, on the support substrate, a dummy pattern that surrounds the deposition mask and is spaced apart from the deposition mask simultaneously with the formation of the deposition mask. The method according to claim 7, wherein said disposition of said support frame is performed by adhering said support frame to said dummy pattern using a fourth resist film. The method of claim 8 , further comprising removing the fourth resist film and the dummy pattern. forming a deposition mask having a plurality of first openings on the support substrate;
forming a resist mask on the deposition mask;
processing the resist mask into a thin film region overlapping the plurality of first openings and a thick film region surrounding the thin film region;
disposing a supporting frame having a window on the supporting substrate such that the window overlaps the thin film region and the thick film region; and
and forming a connection portion for fixing the deposition mask and the support frame by using a plating method. 11. The method of claim 10, wherein the deposition mask is exposed between the support frame and the thick film region,
and the connection portion is formed in contact with the support frame and the exposed deposition mask. The manufacturing method according to claim 10, wherein the forming of the connecting portion is performed such that the connecting portion is spaced apart from an upper surface of the thick film region. The method of claim 10 , wherein the thin film region and the thick film region are formed using a halftone mask. The method of claim 10 , further comprising forming a dummy pattern on the support substrate that surrounds the deposition mask and is spaced apart from the deposition mask simultaneously with the formation of the deposition mask. The method according to claim 14, wherein said disposition of said support frame is performed by adhering said support frame to said dummy pattern using a resist film. 16. The method of claim 15, further comprising removing the resist film and the dummy pattern.

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