WO2021044718A1

WO2021044718A1 - Vapor deposition mask

Info

Publication number: WO2021044718A1
Application number: PCT/JP2020/025998
Authority: WO
Inventors: 松本　優子
Original assignee: 株式会社ジャパンディスプレイ
Priority date: 2019-09-03
Filing date: 2020-07-02
Publication date: 2021-03-11
Also published as: CN114269962A; JP2021038436A

Abstract

A vapor deposition mask that includes a mask part that has a plurality of openings and a first film thickness and a holding part that has a second film thickness that is greater than the first film thickness. The holding part may be formed from a portion of the mask part and a frame part that is provided so as to overlap said portion of the mask part. Said portion of the mask part may include a section that corresponds to the outer circumference of the mask part or may include a section that crosses between the plurality of openings from a first edge of the mask part to a second edge that is opposite the first edge.

Description

Vapor deposition mask

One embodiment of the present invention relates to a vapor deposition mask.

The light emitting display device can display an image by individually controlling the light emitting elements provided for each pixel. For example, an organic EL display device that uses an organic EL element as a light emitting element is known. The organic EL element has a layer containing an organic EL material (hereinafter, referred to as “organic EL layer”) between the anode electrode and the cathode electrode. The organic EL layer includes a functional layer such as a light emitting layer, an electron injection layer, and a hole injection layer. The organic EL element can emit light in various wavelength colors by selecting the organic material constituting the functional layer.

The vacuum deposition method is used to form a thin film of an organic EL device made of a low molecular weight compound. In the vacuum vapor deposition method, a thin film is formed by heating the vaporized material with a heater to sublimate it under vacuum and depositing (depositing) the sublimated vaporized material on the surface of the substrate. At this time, a high-definition thin film pattern can be formed by using a mask (deposited mask) having a large number of fine opening patterns.

The vapor deposition mask is divided into a fine metal mask (FMM) that forms an opening pattern by etching and an electrofine forming mask (EFM) that forms an opening pattern using a technique called electroforming. For example, Patent Document 1 discloses a method in which a mask portion having a high-definition opening pattern is formed by electroforming, and the formed mask portion is fixed to the frame body portion by electroforming.

JP-A-2017-210633

The vapor deposition mask described in Patent Document 1 has a problem that the manufacturing cost is high because the structure is complicated and a large number of steps are required for manufacturing. Further, since the structure is such that the frame portion and the mask portion prepared separately are connected, there are variations in the positioning accuracy and the stress generated in the plane. Therefore, the vapor deposition mask described in Patent Document 1 also has a problem that the accuracy of the vapor deposition position in the mask portion (hereinafter referred to as “positional accuracy”) is low. Furthermore, in order to manufacture many organic EL display devices with one thin-film mask, if the width of the frame portion is narrowed or the number of the frame portions is reduced, the strength of the mask portion is lowered and the warp due to stress is increased. There is also a problem.

One object of the present invention is to provide a vapor-deposited mask having improved position accuracy of the mask portion.

One object of the present invention is to provide a vapor-deposited mask having improved strength of the mask portion.

One embodiment of the present invention aims to provide a lightweight vapor deposition mask.

One embodiment of the present invention aims to reduce the manufacturing cost of a thin-film deposition mask.

The vapor deposition mask in one embodiment of the present invention includes a mask portion having a plurality of openings and having a first film thickness, and a holding portion having a second film thickness thicker than the first film thickness.

The vapor-deposited mask according to the embodiment of the present invention includes a mask portion composed of a metal layer having a plurality of openings, a frame portion composed of an n-layer metal layer, and a part of the mask portion (n + 1). ) Includes a retainer composed of a metal layer.

In the method for manufacturing a vapor-deposited mask according to an embodiment of the present invention, an insulating layer is formed on a substrate by forming a mask portion having a plurality of openings, covering the plurality of openings, and exposing a portion corresponding to the outer periphery of the mask portion. This includes forming a frame portion on a portion corresponding to the outer periphery of the mask portion, removing the insulating layer, and peeling the mask portion from the substrate.

It is a top view of the vapor deposition chamber in the 1st Embodiment of this invention. It is a side view of the vapor deposition chamber in 1st Embodiment of this invention. It is sectional drawing of the vapor deposition source in 1st Embodiment of this invention. It is a top view of the vapor deposition mask in the 1st Embodiment of this invention. It is sectional drawing of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 1st Embodiment of this invention. It is a top view of the vapor deposition mask in the 2nd Embodiment of this invention. It is sectional drawing of the vapor deposition mask in 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask in 3rd Embodiment of this invention. It is sectional drawing of the vapor deposition mask in 4th Embodiment of this invention.

Hereinafter, embodiments of the present invention will be described with reference to drawings and the like. However, the present invention can be implemented in various aspects without departing from the gist thereof, and is not construed as being limited to the description contents of the embodiments illustrated below. The drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual embodiment in order to clarify the explanation, but this is merely an example and the interpretation of the present invention is limited. It's not something to do. In this specification and each drawing, elements having the same functions as those described with respect to the existing drawings may be designated by the same reference numerals and duplicate description may be omitted.

When a plurality of films are formed by etching or irradiating a certain film with light, the plurality of films may have different functions or roles. In this case, since the plurality of films are films formed by the same process, they have the same layer structure and are composed of the same material. In the present specification, a plurality of films thus formed by the same process are treated as films existing in the same layer.

In the present specification and claims, when expressing an embodiment in which another structure is arranged on one structure, when the term "above" is simply used, the structure is specified unless otherwise specified. When another structure is placed directly above the structure so as to be in contact with the body, and when another structure is placed above one structure via another structure. Defined to include both.

"Also, in the present specification," α includes A, B or C "," α includes any of A, B and C ", and" α is selected from the group consisting of A, B and C. Unless otherwise specified, the expression "including one" does not exclude the case where α includes a plurality of combinations of A to C. Furthermore, these expressions do not exclude cases where α contains other elements.

<First Embodiment>
[Structure of thin-film deposition apparatus 10]
The configuration of the vapor deposition apparatus 10 according to the embodiment of the present invention will be described with reference to FIGS. 1 to 3. The vapor deposition apparatus 10 includes a plurality of chambers having various functions. The example shown below is an example showing one vapor deposition chamber 100 out of a plurality of chambers.

FIG. 1 is a top view of the vapor deposition chamber 100 according to the first embodiment of the present invention. FIG. 2 is a side view of the vapor deposition chamber 100 according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of the vapor deposition source 112 according to the first embodiment of the present invention.

As shown in FIG. 1, the vapor deposition chamber 100 is partitioned from an adjacent chamber by a load lock door 102. The vapor deposition chamber 100 can maintain the inside of the vapor deposition chamber 100 in a highly vacuum depressurized state or in a state of being filled with an inert gas such as nitrogen or argon. Therefore, a decompression device (not shown), a gas intake / exhaust mechanism, and the like are connected to the vapor deposition chamber 100.

The thin-film deposition chamber 100 has a structure capable of accommodating an object on which a thin-film deposition film is formed. Hereinafter, an example in which a plate-shaped substrate to be vapor-deposited 104 is used as the object will be described. As shown in FIGS. 1 and 2, the vapor deposition source 112 is arranged below the substrate to be vapor-deposited 104. The thin-film deposition source 112 has a substantially rectangular shape and is arranged along one side of the substrate to be vapor-deposited 104. Such a vapor deposition source 112 is called a linear source type vapor deposition source. When a linear source type vapor deposition source 112 is used, the vapor deposition chamber 100 has a configuration in which the substrate to be deposited 104 moves relative to the thin film deposition source 112. Although FIG. 1 shows an example in which the vapor deposition source 112 is fixed and the vapor deposition source 104 moves on the vapor deposition source 112, the thin film deposition source 104 may be fixed and the vapor deposition source 112 may move.

The vapor deposition source 112 is filled with a material to be vapor-deposited (hereinafter referred to as "deposited material"). The thin-film deposition source 112 has a heating unit 122 (see FIG. 3 described later) for heating the vapor-deposited material. When the vapor-deposited material is heated by the heating unit 122 of the thin-film deposition source 112, the heated vapor-deposited material is vaporized (sublimated) and becomes steam, which goes from the thin-film deposition source 112 to the substrate 104 to be vapor-deposited. When the vapor of the vapor-deposited material reaches the surface of the film-deposited substrate 104, the vapor is cooled and solidified, and the vapor-deposited material is deposited on the surface of the film-deposited substrate 104. In this way, a thin film of the vapor-deposited material is formed on the film-deposited substrate 104 (in FIG. 2, on the surface of the film-deposited substrate 104 facing the vapor deposition source 112).

As shown in FIG. 2, the vapor deposition chamber 100 includes a holder 108 for holding the vapor deposition substrate 104 and the vapor deposition mask 300, a moving mechanism 110 for moving the holder 108, and a shutter 114 for shielding the upper surface of the vapor deposition source 112. Further prepare. The holder 108 maintains the positional relationship between the substrate 104 to be vapor-deposited and the thin-film mask 300. The moving mechanism 110 moves the substrate 104 to be vapor-deposited and the thin-film mask 300 on the thin-film deposition source 112. The shutter 114 is rotatably provided above the vapor deposition source 112. By rotating the shutter 114 on the thin-film deposition source 112, it is possible to control the release of the thin-film deposition material by the thin-film deposition source 112. For example, by moving the shutter 114 to a position where it does not overlap with the thin-film deposition source 112, the vapor of the vapor-deposited material reaches the substrate 104 to be deposited without being shielded by the shutter 114. On the contrary, when the shutter 114 moves to a position where it overlaps with the vapor deposition source 112, the vapor of the vapor deposition material is shielded by the shutter 114 and does not reach the vapor deposition substrate 104. The opening and closing of the shutter 114 can be controlled by a control device (not shown).

In the examples shown in FIGS. 1 and 2, the linear source type vapor deposition source 112 is shown, but the vapor deposition source 112 is not limited to this example and can have any shape. For example, the shape of the thin-film deposition source 112 may be a so-called point source type in which the material used for vapor deposition is selectively arranged at or near the center of gravity of the substrate 104 to be vapor-deposited. In the case of the point source type, the relative positions of the vapor deposition substrate 104 and the vapor deposition source 112 are fixed, and a mechanism for rotating the vapor deposition substrate 104 is provided in the vapor deposition chamber 100. Further, in the examples shown in FIGS. 1 and 2, a horizontal thin-film deposition apparatus in which the substrate is arranged so that the main surface of the substrate is parallel to the horizontal plane is shown, but the main surface of the substrate is perpendicular to the horizontal plane. It may be a vertical vapor deposition apparatus in which the substrate is arranged as described above.

FIG. 3 is a cross-sectional view of the vapor deposition source 112 according to the first embodiment of the present invention. The thin-film deposition source 112 includes a storage container 120, a heating unit 122, a thin-film deposition holder 124, a mesh-shaped metal plate 128, and a pair of guide plates 132.

The storage container 120 is a member that holds the vapor-deposited material. As the storage container 120, a member such as a crucible can be used. The storage container 120 is removably held inside the heating unit 122. The storage container 120 can contain, for example, metals such as tungsten, tantalum, molybdenum, titanium, and nickel, or alloys composed of these metals. The storage container 120 may contain an inorganic insulator such as aluminum oxide, boron nitride, or dilyconium oxide.

The heating unit 122 is removably held inside the vapor deposition holder 124. The heating unit 122 heats the storage container 120 by a resistance heating method. Specifically, the heating unit 122 has a heater 126. By energizing the heater 126, the heating unit 122 is heated, and the vaporized material in the storage container 120 is heated and vaporized. The vaporized vaporized material is discharged from the opening 130 of the storage container 120 to the outside of the storage container 120. The mesh-shaped metal plate 128 arranged so as to cover the opening 130 suppresses the suddenly boiled vapor deposition material from being discharged to the outside of the storage container 120. The heating unit 122 and the vapor deposition holder 124 can contain the same materials as the storage container 120.

The pair of guide plates 132 are provided above the vapor deposition source 112. At least a part of the guide plate 132 is tilted with respect to the side surface or the vertical direction of the storage container 120. The angle at which the vapor of the vapor-deposited material spreads (hereinafter referred to as "injection angle") is controlled by the inclination of the guide plate 132, and the directivity can be given to the flight direction of the vapor. The injection angle is determined by the angle θe formed by the two guide plates 132. The angle θe is appropriately adjusted depending on the size of the film-deposited substrate 104, the distance between the vapor deposition source 112 and the film-deposited substrate 104, and the like. The angle θe is, for example, 40 ° or more and 80 ° or less (preferably 50 ° or more and 70 ° or less). In this embodiment, the angle θe is 60 °. The surfaces formed by the inclined surface of the guide plate 132 are called

critical surfaces

160a and 160b. The vapor of the material flies in a space sandwiched between the

critical surfaces

160a and 160b. Although not shown, when the vapor deposition source 112 is a point source type, the guide plate 132 is provided in a conical shape.

The vapor deposition material can be selected from various materials and may be either an organic compound or an inorganic compound. As the organic compound, for example, a luminescent material or a carrier transporting material can be used. As the inorganic compound, a metal, an alloy, a metal oxide, or the like can be used. A plurality of materials may be filled in one storage container 120 so that the plurality of materials are mixed when vaporized. Although not shown, a plurality of thin-film deposition sources may be used so that different thin-film deposition materials can be deposited at the same time.

[Structure of thin-film mask 300]
FIG. 4 is a top view of the vapor deposition mask according to the first embodiment of the present invention. The thin-film mask 300 has a thin-film mask portion 310 and a frame portion 330 arranged so as to overlap a part of the mask portion 310.

A plurality of panel areas 315 are arranged in the mask unit 310. When the organic EL material is vapor-deposited, the substrate to be vapor-deposited is arranged so that the display area of the organic EL display device overlaps with each panel area 315. A plurality of openings 311 are provided in each panel area 315 according to the pixel pitch of the organic EL display device. The region of the mask portion 310 other than the opening 311 is referred to as a non-opening 312. The non-opening 312 is an area surrounding each opening 311. The non-opening 312 corresponds to a portion of each panel region 315 that shields the deposited material.

At the time of vapor deposition, the vapor deposition mask 300 and the vapor deposition mask 300 overlap so that the vapor deposition region (the region to be formed of the thin film) and the opening 311 in the substrate to be deposited 104 overlap with each other and the non-deposited region and the non-opening 312 in the substrate to be deposited 104 overlap. The substrate 104 to be vapor-deposited is aligned. When the vapor of the thin-film deposition material passes through the opening 311 and reaches the substrate 104 to be vapor-deposited, the thin-film deposition material is deposited in the thin-film deposition region to form a thin film.

The frame body portion 330 is provided so as to be overlapped with a part of the mask portion 310 (a portion corresponding to the outer circumference) so as to surround the plurality of panel areas 315 of the mask portion 310 in a plan view. The frame body portion 330 is composed of a metal layer having a film thickness thicker than that of the mask portion 310. That is, the vapor deposition mask 300 of the present embodiment has a configuration in which the mask portion 310 is held by a portion having a film thickness thicker than that of the mask portion 310 (holding portion 350 described later).

FIG. 5 is a cross-sectional view of the vapor deposition mask 300 according to the embodiment of the present invention. Specifically, the cross-sectional view shown in FIG. 5 shows a cross section along the AA'line of FIG. As shown in FIGS. 4 and 5, the frame body portion 330 is provided so as to overlap the portion corresponding to the outer circumference of the thin film-shaped mask portion 310. That is, in the vapor deposition mask 300 shown in FIG. 5, the region (holding portion 350) surrounded by the alternate long and short dash line is composed of a metal layer having a total film thickness of the mask portion 310 and the frame portion 330. Has been done. That is, by providing the frame body portion 330 on a part of the mask portion 310, the holding portion 350 functions as a frame for holding the mask portion 310.

In the above configuration, the mask portion 310 is composed of a thin-film plating layer. The film thickness d1 of the mask portion 310 is 5 μm or more and 10 μm or less. The frame body portion 330 is composed of a plating layer thicker than the mask portion 310. The film thickness d2 of the frame body portion 330 is 100 μm or more and 500 μm or less. Both the mask portion 310 and the frame portion 330 are plating layers (metal layers) formed by using a technique called electroforming.

In the present embodiment, invar is used as the metal material constituting the mask portion 310 and the frame body portion 330. The coefficient of thermal expansion of Invar is lower than that of nickel and the like, and is close to the coefficient of thermal expansion of glass. Therefore, by using Invar as the constituent material of the thin-film deposition mask 300, the deviation due to thermal expansion between the thin-film deposition mask and the substrate to be vapor-deposited (usually a glass substrate is used) during vapor deposition is reduced, and the position accuracy of the vapor deposition is improved. It has the advantage of improving. However, the present invention is not limited to this example, and any metal material that can form a thin film by electroforming may be used. Further, the mask portion 310 and the frame body portion 330 are not limited to the example of being made of the same metal material, and may be made of different metal materials.

As described above, the vapor deposition mask 300 of the present embodiment constitutes a holding portion by superimposing the frame body portion 330 on a part of the mask portion 310 (for example, the region corresponding to the outer circumference). Therefore, the mask portion 310 exists from each panel region 315 to the lower part of the frame body portion 330, and does not have a step below the frame body portion 330. Therefore, when the thin-film deposition mask 300 is brought into close contact with the thin-film deposition substrate 104 by a magnet or the like, the thin-film deposition mask 300 and the thin-film deposition substrate 104 can be stably adhered to each other, and the position accuracy of the thin-film deposition is improved. Further, when the substrate 104 to be deposited is peeled off from the vapor deposition mask 300, the vapor deposition mask 300 is less likely to be deformed, and the durability of the vapor deposition mask 300 is improved. Further, since the strength of the holding portion is stronger than that of the conventional thin-film deposition mask, the strength of the mask portion 310 is also improved. Further, since the film thickness of the frame body portion 330 can be made smaller than that of the conventional thin-film deposition mask, the weight of the entire vapor deposition mask 300 can be reduced.

[Manufacturing method of thin-film mask 300]
A method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention will be described with reference to FIGS. 6 to 13. 6 to 13 are cross-sectional views showing a method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a step of forming the conductive release layer 430 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. As shown in FIG. 6, the release layer 430 is formed on substantially the entire surface of the substrate 410. As the substrate 410, a substrate having high flatness is preferable, and a glass substrate is particularly preferable. In this case, the thickness of the substrate 410 may be 0.5 mm or more and 1 mm or less. The material of the release layer 430 includes metal oxide materials such as ITO (indium tin oxide) and IZO (indium zinc oxide), or Al (aluminum), Mo (molybdenum), Ti (titanium), and Cu (copper). ), Cr (chromium) and other conductive materials containing metals are preferred. When the mask portion 310 is formed by electrolytic plating, the thickness of the release layer 430 is preferably a thickness capable of imparting sufficient conductivity so that the plating layer can be grown. For example, in the case of ITO, the thickness of the release layer 430 is preferably 50 nm or more and 500 nm or less.

FIG. 7 is a cross-sectional view showing a step of forming the first insulating layer 450 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. After applying the photosensitive resin material to substantially the entire surface of the substrate 410, the photosensitive resin material is patterned by photolithography and etching. As a result, the first insulating layer (resist layer) 450 for forming the mask portion 310 is formed on the release layer 430. The region forming the first insulating layer 450 corresponds to the region in which the plurality of openings 311 of the mask portion 310 shown in FIGS. 4 and 5 are arranged.

FIG. 8 is a cross-sectional view showing a step of forming the mask portion 310 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. In FIG. 8, a plating layer (metal layer) composed of inver is precipitated in a region where the first insulating layer 450 is not formed (above the exposed peeling layer 430) by an electrolytic plating method in which the peeling layer 430 is energized. , The mask portion 310 is formed. The film thickness of the mask portion 310 is preferably in the range of 5 μm or more and 10 μm or less. Although the example in which the mask portion 310 is formed by Invar is shown here, it is also possible to use other metal materials such as nickel or nickel alloy.

Further, in the present embodiment, an example in which electrolytic plating is performed using the conductive release layer 430 is shown, but the present invention is not limited to this example, and the mask portion 310 is not limited to this example, for example, by the electroless plating method without forming the release layer 430. It is also possible to form. Specifically, first, plating composed of Invar on the region where the first insulating layer 450 is formed (in this case, the region where the glass substrate 410 is exposed) and the first insulating layer 450 by an electroless plating method. Form a layer. Then, by removing the first insulating layer 450, the plating layer on the first insulating layer 450 is removed. By such a process called "lift-off", the mask portion 310 having a plurality of openings can be formed.

FIG. 9 is a cross-sectional view showing a step of forming the second insulating layer 470 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. After applying the photosensitive resin material to substantially the entire surface of the substrate 410, the photosensitive resin material is patterned by photolithography and etching. As a result, a second insulating layer (resist layer) 470 for forming the frame body portion 330 is formed on the mask portion 310. The region forming the second insulating layer 470 corresponds to the region inside the frame body portion 330 shown in FIGS. 4 and 5.

FIG. 10 is a cross-sectional view showing a step of forming the frame body portion 330 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. In FIG. 10, a plating layer (metal layer) composed of an inver is formed in a region (above the exposed mask portion 310) where the second insulating layer 470 is not formed by an electrolytic plating method in which the release layer 430 and the mask portion 310 are energized. ) Is precipitated to form the frame body portion 330. The film thickness of the frame portion 330 is preferably in the range of 100 μm or more and 500 μm or less. Although the example in which the frame body portion 330 is formed by Invar is shown here, it is also possible to use other metal materials such as nickel or nickel alloy. Further, in FIG. 10, the frame body portion 330 grows upward beyond the film thickness of the second insulating layer 470, but the growth of the frame body portion 330 proceeds so as to cover the second insulating layer 470. That is not desirable. Therefore, the film thickness of the second insulating layer 470 may be sufficiently thickened so that the frame body portion 330 grows along the side wall of the second insulating layer 470 to a desired film thickness.

FIG. 11 is a cross-sectional view showing a step of removing the first insulating layer 450 and the second insulating layer 470 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. By removing the first insulating layer 450 and the second insulating layer 470, a part of the mask portion 310 is exposed inside the frame portion 330. Further, a plurality of openings 311 are formed in each panel area 315 of the mask portion 310. The release layer 430 is exposed inside the plurality of openings 311.

FIG. 12 is a cross-sectional view showing a step of cutting the mask portion 310 and the frame portion 330 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. In the present embodiment, first, the outer edges of the mask portion 310 and the frame portion 330 are cut by irradiation with laser light or the like. In the present embodiment, an example in which the mask portion 310 and the frame body portion 330 are selectively cut by adjusting the output of the laser beam is shown, but the release layer 430 may be cut together with the mask portion 310 and the frame body portion 330. .. As the laser, a carbon dioxide gas laser, a solid-state laser, an excimer laser or the like can be used.

FIG. 13 is a cross-sectional view showing a step of peeling the substrate 410 from the mask portion 310 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. In FIG. 13, the release layer 430 is removed using a solution. When, for example, ITO is used as the release layer 430, for example, oxalic acid can be used as the solution. In the release layer 430, the side surface of the release layer 430 and the portion exposed by the plurality of openings 311 of the mask portion 310 are preferentially dissolved, and the entire portion is gradually eroded by the solution and removed. As shown in FIG. 13, the mask portion 310 can be peeled from the substrate 410 by melting and disappearing the peeling layer 430.

The first insulating layer 450 and the second insulating layer 470 may be formed in the outer edge region of the substrate 410 in the steps shown in FIGS. 8 and 9. In this case, when the first insulating layer 450 is removed, the release layer 430 is exposed in the removed traces. With such a configuration, when the release layer 430 is brought into contact with the solution, the release layer 430 exposed in the outer edge region of the substrate 410 is preferentially dissolved. Therefore, the dissolution liquid easily enters between the substrate 410 and the mask portion 310, and the release layer 430 can be efficiently dissolved.

By removing the peeling layer 430 using the dissolution liquid, the mask portion 310 can be peeled from the substrate 410 while suppressing an unnecessary load. Further, by removing the peeling layer 430 so that the peeling layer 430 does not remain on the back surface of the mask portion 310 after peeling, it is possible to prevent the mask from being deformed due to the stress of the remaining film. Preventing such mask deformation contributes to improving the position accuracy of vapor deposition. However, the present invention is not limited to this example, and for example, when the substrate 410 is a glass substrate, the substrate 410 may be dissolved using a solution such as hydrofluoric acid while protecting the mask portion 310 with a protective layer.

As described above, in the method for manufacturing the vapor deposition mask 300 of the present embodiment, after the mask portion 310 is formed by the plating layer, the frame portion 330 is formed by a plating layer thicker than the mask portion 310 in a part thereof. As described above, according to the present embodiment, the vapor deposition mask 300 can be manufactured with a smaller number of steps than the conventional structure, so that the manufacturing cost of the vapor deposition mask 300 can be reduced. Further, since the frame body portion 330 is a plating layer having a thick film thickness, the structure is simple. Therefore, there is an advantage that the area that effectively functions as the mask portion 310 can be increased, and the number of display panels that can be processed at one time by the vapor deposition mask 300 can be increased. As a result, the manufacturing cost of each organic EL display device can be reduced.

<Second Embodiment>
The vapor deposition mask 300A according to the embodiment of the present invention will be described with reference to FIG. FIG. 14 is a plan view of the vapor deposition mask 300A according to the second embodiment of the present invention. FIG. 15 is a cross-sectional view of the vapor deposition mask 300A according to the second embodiment of the present invention. In this embodiment, since the configuration of the frame portion 330A is the same as that of the vapor deposition mask 300 of the first embodiment, detailed description thereof will be omitted using the same reference numerals as those of the first embodiment.

As shown in FIGS. 14 and 15, in the vapor deposition mask 300A, the frame body portion 330A is provided on the mask portion 310 in a grid pattern. That is, the holding portions 350 provided in a grid pattern hold the mask portion 310. A plurality of panel areas 315 are arranged in the mask portion 310. Each panel area 315 is provided with a plurality of openings 311 and non-openings 312.

As described above, in the vapor deposition mask 300A of the present embodiment, the frame body portion 330A is provided not only in the portion corresponding to the outer circumference of the mask portion 310 but also in other portions. For example, in the present embodiment, an example in which the frame body portion 330A is provided in a grid pattern is shown, but the present invention is not limited to this example, and the frame body portion 330A may be provided in a stripe shape in the vertical direction or the horizontal direction. .. That is, the frame body portion 330A may be provided so as to cross between the plurality of openings 311 from the first side of the mask portion 310 to the second side facing the first side.

According to the present embodiment, the same effect as that of the thin-film deposition mask 300 of the first embodiment can be obtained, and the strength of the thin-film deposition mask 300A can be further improved.

<Third Embodiment>
A method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention will be described with reference to FIG. FIG. 16 is a cross-sectional view showing a method of manufacturing the vapor deposition mask 300 according to the third embodiment of the present invention. The present embodiment is the same as the method for manufacturing the vapor deposition mask 300 in the first embodiment except that the resin layer 420 is formed between the substrate 410 and the release layer 430, and therefore has the same reference numerals as those in the first embodiment. A detailed description will be omitted with reference to.

FIG. 16 is a cross-sectional view showing a step of peeling the mask portion 310 from the substrate 410 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. In the present embodiment, the resin layer 420 is formed before the release layer 430 is formed on the substrate 410. As the material of the resin layer 420, for example, a resin material such as a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluororesin, or a siloxane resin can be used. The film thickness of the resin layer 420 is preferably 0.5 μm or more and 2 μm or less.

As shown in FIG. 16, in the present embodiment, the resin layer 420 is irradiated with laser light from the back surface side of the substrate 410 (the side opposite to the surface on which the resin layer 420 is formed). The region of the resin layer 420 close to the substrate 410 absorbs the laser beam and deteriorates. Since the resin layer 420 altered in this way can be easily removed with the solution, the substrate 410 can be peeled off from the resin layer 420 by lift-off. After the substrate 410 is peeled off, the remaining resin layer 420 is etched and removed. The vapor deposition mask 300 can be obtained by removing the exposed release layer 430 using a solution after removing the resin layer 420.

As described above, according to the present embodiment, the release layer 430 can be removed after the substrate 410 is peeled off, so that the release layer 430 can be dissolved more efficiently.

<Fourth Embodiment>
The vapor deposition mask 300B according to the embodiment of the present invention will be described with reference to FIG. FIG. 17 is a cross-sectional view showing a vapor deposition mask 300B according to a fourth embodiment of the present invention. In the present embodiment, the frame body portion 330B is the same as the vapor deposition mask 300 in the first embodiment except that the frame body portion 330B has a structure in which a plurality of metal layers are laminated. The explanation will be omitted.

The frame body portion 330B of the present embodiment is provided with metal layers 330Ba to 330Be in order from the side closer to the mask portion 310. In the present embodiment, the metal layers 330Ba to 330Be are all composed of Invar, but the present invention is not limited to this example, and other metal materials such as nickel may be used. Further, the number of laminated metal layers is not limited to this example, and can be any number.

In the present embodiment, the stress generated in the frame body portion 330B is controlled by forming the frame body portion 330B using a plurality of metal layers 330Ba to 330Be. Specifically, the overall stress of the frame body portion 330B is controlled by laminating metal layers having different stresses, and the warp of the vapor deposition mask 300B due to the stress of the frame body portion 330B is reduced. ..

The stress of the metal layers 330Ba to 330Be can be controlled by various methods. For example, the film thickness of each of the metal layers 330Ba to 330Be may be changed to make the stress different, or the composition may be changed to make the stress different. When changing the composition, it is possible to change the composition of the metal layer, for example, by changing the electroplating conditions (for example, the composition of the electrolytic solution, the amount of current when energized, etc.). In the present embodiment, the plating conditions of Invar constituting the metal layer 330Ba, the metal layer 330Bc and the metal layer 330Be are different from the plating conditions of the Invar constituting the metal layer 330Bb and the metal layer 330Bd. That is, the frame body portion 330B of the present embodiment has a structure in which metal layers having different compositions are alternately laminated. However, not limited to this example, it is possible to appropriately determine under what plating conditions each metal layer 330Ba to 330Be is formed.

Further, in the present embodiment, an example in which the film thicknesses of the metal layers 330Ba to 330Be are the same is shown, but metal layers having different film thicknesses may be combined. Further, the frame body portion 330B may be formed by combining metal layers having various film thicknesses or compositions with the film thickness and the plating conditions as parameters. As described above, in the present embodiment, the frame body portion 330B is formed by laminating a plurality of metal layers 330Ba to 330Be, and the holding portion 350 is formed by superimposing the frame body portion 330B on the mask portion 310. Therefore, when the frame body portion 330B is composed of the n-layer metal layer, the holding portion 350 adds one metal layer (mask portion 310) to the n-layer metal layer to form the (n + 1) layer metal layer. Consists of.

Although the frame body portion 330B is composed of a plurality of metal layers 330Ba to 330Be in the present embodiment, the mask portion 310 may be composed of a plurality of metal layers. For example, both the mask portion 310 and the frame body portion 330B may be composed of a plurality of metal layers, or only one of them may be composed of a plurality of metal layers. In any case, the holding portion 350 is formed by superimposing the frame body portion 330B on the mask portion 310. Therefore, when the frame body portion 330B is composed of the n-layer metal layer and the mask portion 310 is composed of the m-layer metal layer, the holding portion 350 is composed of the (n + m) layer metal layer.

Each of the above-described embodiments of the present invention can be appropriately combined and implemented as long as they do not contradict each other. Based on the vapor deposition mask of each embodiment, those skilled in the art have appropriately added, deleted, or changed the design of components, or added, omitted, or changed the conditions of the process. As long as it is provided, it is included in the scope of the present invention.

Further, even if other effects different from the effects brought about by the above-described embodiments of the above-described embodiments, those that are clear from the description of the present specification or those that can be easily predicted by those skilled in the art are referred to. Naturally, it is understood that it is brought about by the present invention.

10 ... thin film deposition device, 100 ... thin film deposition chamber, 102 ... load lock door, 104 ... vapor deposition substrate, 108 ... holder, 110 ... moving mechanism, 112 ... thin film deposition source, 114 ... shutter, 120 ... storage container, 122 ... heating unit, 124 ... thin film holder, 126 ... heater, 128 ... metal plate, 130 ... opening, 132 ... guide plate, 160a, 160b ... critical plane, 300, 300A, 300B ... vapor deposition mask, 310 ... mask part, 310B ... frame body part 3,11 ... Opening, 312 ... Non-opening, 315 ... Panel area, 330, 330A, 330B ... Frame part, 330Ba to 330Be ... Metal layer, 350 ... Holding part, 410 ... Substrate, 420 ... Resin layer, 430 ... Peeling Layers, 450 ... 1st insulating layer (resist layer), 470 ... 2nd insulating layer (resist layer)

Claims

A mask portion having a plurality of openings and having a first film thickness,
A holding portion having a second film thickness thicker than the first film thickness,
Including vapor deposition mask.
The vapor deposition mask according to claim 1, wherein the holding portion is composed of a part of the mask portion and a frame portion provided so as to overlap the part of the mask portion.
A mask portion composed of a metal layer having a plurality of openings,
A holding portion composed of an (n + 1) layer metal layer including a frame portion composed of an n-layer metal layer and a part of the mask portion, and a holding portion composed of an (n + 1) layer metal layer.
Including vapor deposition mask.
The vapor deposition mask according to claim 2 or 3, wherein a part of the mask portion includes a portion corresponding to the outer periphery of the mask portion.
The vapor deposition mask according to claim 2 or 3, wherein a part of the mask portion includes a portion that crosses between the plurality of openings from a first side of the mask portion to a second side facing the first side.
The vapor deposition mask according to claim 2 or 3, wherein the frame portion has a laminated structure including a plurality of metal layers.
The vapor deposition mask according to claim 6, wherein the plurality of metal layers include metal layers having different film thicknesses from each other.
The vapor deposition mask according to claim 2 or 3, wherein the mask portion and the frame portion are composed of a metal layer including Invar.
A mask portion having a plurality of openings is formed on the substrate, and the mask portion is formed.
An insulating layer is formed to cover the plurality of openings and expose a portion corresponding to the outer periphery of the mask portion.
A frame body portion is formed on a portion corresponding to the outer circumference of the mask portion.
Remove the insulating layer and
A method for manufacturing a vapor-deposited mask, which comprises peeling the mask portion from the substrate.
The method for manufacturing a vapor-deposited mask according to claim 9, wherein the mask portion and the frame portion are formed by an electrolytic plating method.
The method for manufacturing a vapor-deposited mask according to claim 9, wherein the mask portion and the frame portion are formed by using a material containing Invar.
The method for manufacturing a vapor-deposited mask according to claim 9, which comprises forming a conductive release layer on the substrate before forming the mask portion.
The method for manufacturing a vapor deposition mask according to claim 12, wherein the conductive release layer is made of a conductive material containing a metal oxide.
The method for manufacturing a vapor-deposited mask according to claim 9, wherein the frame portion includes metal layers having different film thicknesses.
The method for manufacturing a vapor-deposited mask according to claim 9, wherein the frame portion includes a metal layer formed by an electrolytic plating method under different conditions.