KR20180089607A - Method of manufacturing mask for deposition - Google Patents

Abstract

The present invention relates to a method for manufacturing a mask for deposition with improved precision of a deposition pattern, comprising: a step of forming a mask base material on a first electrode via electroplating; a step of arranging the first electrode and the mask base material in a laser processing device; a step of forming a mask for deposition having the deposition pattern by laser processing the mask base material; and a step of separating the mask for deposition from the first electrode.

Description

METHOD OF MANUFACTURING MASK FOR DEPOSITION [0002]

The present invention relates to a method for manufacturing an evaporation mask.

The display device may include a liquid crystal display (LCD), an organic light emitting diode (OLED) display, a plasma display panel (PDP), and an electrophoretic display display).

Among these organic light emitting display devices, display characteristics such as a contrast ratio and a response time are excellent, and a flexible display is easily realized, which is attracting attention as an ideal next generation display.

In general, an organic light emitting display has a structure in which a cathode and an anode are surrounded by a plurality of thin films made of an organic material on a substrate. When a voltage is applied to the cathode and the anode, a current is caused to flow in the organic thin film . That is, the organic molecules are excited by the current injection, and then return to the ground state to emit extra energy into the light. As described above, in order to form an organic light emitting display device including a plurality of organic thin films, it is important to deposit an organic thin film with uniform thickness throughout the substrate.

The organic thin film can be formed by a deposition process using an evaporation mask. Generally, the vapor deposition mask has a vapor deposition pattern including a plurality of openings. In recent years, in response to the increase in the resolution of the display device, the pattern of vapor deposition is gradually becoming finer. Accordingly, studies have been made on a manufacturing method of a vapor deposition mask capable of improving the accuracy of the vapor deposition pattern.

An object of the present invention is to provide a method of manufacturing a vapor deposition mask capable of improving the accuracy of a vapor deposition pattern.

According to another aspect of the present invention, there is provided a method of manufacturing a deposition mask, including: forming a mask base material on a first electrode by electroplating; Disposing a first electrode and a mask base material in a laser processing apparatus; Laser processing the mask base material to form an evaporation mask having an evaporation pattern; And separating the deposition mask from the first electrode.

The method further comprises the step of cleaning the first electrode and the mask base material after the step of forming the mask base material on the first electrode.

In the step of cleaning the first electrode and the mask base material, a spray method of spraying the cleaning liquid onto the first electrode and the mask base material or a dip method of immersing the first electrode and the mask base material into the cleaning liquid is applied.

In the step of arranging the first electrode and the mask base material in the laser processing apparatus, the first electrode and the mask base material are mounted on the stage.

The stage is made of glass.

The stage further includes an electrostatic chuck for attracting the first electrode and the mask base material.

The laser processing apparatus includes a laser oscillating section for oscillating laser light; A splitter for splitting the oscillated laser beam into a plurality of laser beams; And a scanner for adjusting the irradiation position of the laser beam.

The laser beam is irradiated in a direction perpendicular to the mask base material.

The first electrode is made of any one of stainless steel (SUS), invar alloy, nickel (Ni), cobalt (Co), nickel alloy, nickel-cobalt alloy and iron (Fe) alloy.

The mask base material is composed of 30% or more and 50% or less of nickel (Ni), and 50% or more and 70% or less of iron (Fe).

The mask base material further includes at least one of cobalt (Co), copper (Cu), and carbon (C).

The thickness of the vapor deposition mask is 0.1 탆 to 50 탆.

The method of manufacturing a vapor deposition mask according to the present invention can improve the accuracy of the vapor deposition pattern.

1 is an exploded perspective view showing an evaporation mask assembly according to an embodiment of the present invention.
2A to 2C are views illustrating a method of manufacturing a deposition mask according to an embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a deposition mask according to an embodiment of the present invention.
4 is a view illustrating a method of manufacturing a deposition mask according to another embodiment of the present invention.
5 is an exploded perspective view illustrating a deposition mask assembly according to another embodiment of the present invention.
6 is a cross-sectional view illustrating a deposition process of a display device using an evaporation mask assembly according to an embodiment of the present invention.
FIG. 7 is a cross-sectional view illustrating an organic light emitting diode display manufactured using an evaporation mask assembly according to an embodiment of the present invention. Referring to FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Thus, in some embodiments, well known process steps, well known device structures, and well-known techniques are not specifically described to avoid an undesirable interpretation of the present invention. Like reference numerals refer to like elements throughout the specification.

In the drawings, the thicknesses are enlarged to clearly indicate layers and regions. Like parts are designated with like reference numerals throughout the specification. It will be understood that when an element such as a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the element directly over another element, Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. Also, when a portion of a layer, film, region, plate, or the like is referred to as being "below " another portion, it includes not only a case where it is" directly underneath "another portion but also another portion in between. Conversely, when a part is "directly underneath" another part, it means that there is no other part in the middle.

The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element. Thus, the exemplary term "below" can include both downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

The terms first, second, third, etc. in this specification may be used to describe various components, but such components are not limited by these terms. The terms are used for the purpose of distinguishing one element from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second or third component, and similarly, the second or third component may be alternately named.

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG.

1 is an exploded perspective view showing an evaporation mask assembly according to an embodiment of the present invention.

Referring to FIG. 1, an evaporation mask assembly 10 according to an embodiment of the present invention includes a growth mask 101 and a frame 102 for fixing the evaporation mask 101. Hereinafter, for convenience of description, the short side direction of the frame 102 is referred to as a first direction D1, the long side direction of the frame 102 is referred to as a second direction D2, the thickness direction of the frame 102 is referred to as a third direction D3 do.

The vapor deposition mask 101 includes a vapor deposition pattern PA. That is, the vapor deposition mask 101 has the vapor deposition pattern PA at a portion overlapping the opening region OP of the frame 102, which will be described later. The vapor deposition pattern PA may include a plurality of openings. The plurality of openings may be completely penetrated in the third direction D3, which is the thickness direction of each evaporation mask 101, and only a part of the openings may not be processed. The plurality of openings can be processed into various shapes such as a stripe shape and a dot shape according to a pattern of an organic thin film to be deposited on a display device.

The vapor deposition mask 101 may be made of any one of stainless steel (SUS), invar alloy, nickel (Ni), cobalt (Co), nickel alloy, nickel-cobalt alloy and iron (Fe) alloy. The vapor deposition mask 101 may have a thickness of about 0.1 占 퐉 to 50 占 퐉.

The frame 102 has an opening area OP at the center. For example, as shown in FIG. 1, the frame 102 may have a rectangular shape corresponding to a substrate to be an object to be deposited, and may have a rectangular opening area OP at its center so as to perform a deposition process of the substrate Lt; / RTI >

The vapor deposition mask 101 is disposed on the frame 102 in overlapping with the opening area OP. In detail, the vapor deposition mask 101 can be fixed on the frame 102 while being subjected to a tensile force in the first and second directions D1 and D2. For example, at least a part of the end of the vapor-deposition mask 101 may be fixed to the frame 102 by welding. At this time, the welding may be spot welding. The spot welding can minimize the deformation of the vapor deposition mask 101 during welding by welding a plurality of welding points. The welding point may, for example, be in the form of at least one column or zigzag.

Accordingly, the frame 102 can receive a compressive force which is a reaction of the tensile force. Further, when the evaporation mask 101 is welded and fixed, the frame 102 may be deformed by heat. Therefore, the frame 102 is made of a metal having high rigidity in order to minimize the compressive force acting on the frame 102 or the deformation due to heat.

Hereinafter, a method of manufacturing a vapor deposition mask according to an embodiment of the present invention will be described with reference to FIGS. 2A to 3. FIG.

FIGS. 2A to 2C are views illustrating a method of manufacturing a deposition mask according to an embodiment of the present invention, and FIG. 3 is a flowchart illustrating a method of manufacturing a deposition mask according to an embodiment of the present invention.

2A and FIG. 3, a mask base material 110 is formed by electroplating using an electroplating apparatus (S31). The electroplating apparatus includes a first electrode 130, a second electrode 140, an electrolyte 150, an electrolytic bath 160, and a power supply 170.

In detail, the first electrode 130, which is a cathode, and the second electrode 140, which is an anode, are arranged inside the electrolytic bath 160 at a predetermined interval. The first electrode 130 and the second electrode 140 are electrically connected to the power supply device 170 so that a current can flow between the first electrode 130 and the second electrode 140. The first and second electrodes 130 and 140 may be formed of any one of stainless steel (SUS), Invar alloy, Ni, cobalt, nickel alloy, nickel- It can be done in one.

The electrolytic solution 150 is injected into the electrolytic bath 160. When a current flows through the first and second electrodes 130 and 140 immersed in the electrolyte solution 150, the mask base material 110, which is a metal thin film, is formed on the surface of the first electrode 130 which is a cathode.

The mask base material 110 may be made of any one of stainless steel (SUS), invar alloy, nickel (Ni), cobalt (Co), nickel alloy, nickel-cobalt alloy and iron (Fe) alloy. For example, the mask base material 110 according to an embodiment of the present invention may include 30% or more and 50% or less of nickel (Ni), and 50% or more and 70% or less of iron (Fe). The mask base material 110 may further include at least one of cobalt (Co), copper (Cu), and carbon (C). For example, the mask base material 110 may further include not more than 10% cobalt (Co).

The mask base material 110 may have a thickness of about 0.1 占 퐉 to 50 占 퐉. When the thickness of the mask base material 110 is larger than 50 占 퐉, the thickness of the deposition mask 101 becomes larger, so that the accuracy of the deposition can be reduced. Also, although not shown, a masking pattern may be formed in the edge region of the first electrode 130 before the electroplating, depending on the required size of the mask base material 110. At this time, the masking pattern may be a photoresist pattern.

2B and 3, the first electrode 130 and the mask base material 110 formed on the first electrode 130 are separated from the electroplating device, and the first electrode 130 and the mask base material 110, (Step S32). At this time, the mask base material 110 and the first electrode 130 are not separated from each other, but are integrally transferred and cleaned.

The first electrode 130 and the mask base material 110 may be cleaned by a spray method. That is, as shown in FIG. 2B, the first electrode 130 and the mask base material 110 can be cleaned through the cleaning liquid 190 injected from the cleaning nozzle 180. The first electrode 130 and the mask base material 110 may be formed by a dip method in which the first electrode 130 and the mask base material 110 are immersed in a container containing the cleaning liquid 190 ≪ / RTI > In addition, only one side of the mask base material 110 may be cleaned using a roller impregnated with the cleaning liquid 190. Also, depending on the manufacturing process conditions of the vapor deposition mask, the cleaning step may be omitted.

2C and FIG. 3, the first electrode 130 and the mask base material 110 are mounted on the stage 300 (S33), and the mask base material 110 is formed by using the laser processing apparatus 20. Next, The mask 101 is formed by laser processing (S34).

The stage 300 supports and fixes the first electrode 130 and the mask base material 110. At this time, the stage 300 may be made of glass.

The stage 300 may further include an electrostatic chuck 310 for attracting the first electrode 130 and the mask base material 110. The electrostatic chuck 310 attracts the first electrode 130 and the mask base material 110 to form the first electrode 130 and the mask base material 110 when the mask base material 110 is processed with the deposition pattern PA. So as not to move on the stage 300. The electrostatic chuck 310 according to an embodiment of the present invention is embedded in the stage 300 but is not limited thereto and the electrostatic chuck 310 may be disposed between the stage 300 and the first electrode 130 as a separate member.

The laser processing apparatus 20 includes a laser oscillating unit 210, a light splitting unit 220, and a scanner 230, as shown in FIG. 2C.

The laser oscillating unit 210 oscillates the laser beam L1 to the light splitting unit 220 in order to process the mask base material 110 on the deposition pattern PA.

The spectroscopic unit 220 spectroscopies the laser light L1 emitted from the laser oscillation unit 210 to a plurality of laser beams L2. The spectroscopic laser beam L2 is used to process the deposition pattern PA. At this time, the laser beam L2 may be irradiated in a direction perpendicular to the mask base material 110. [

The scanner 230 can adjust the irradiation position of the plurality of laser beams L2 passing through the light splitting unit 220. [ More specifically, when the laser beam L2 is irradiated on the mask base material 110 to process the deposition pattern PA, the mask base material 110 is fixed on the stage 300 using the electrostatic chuck 310 And the scanner 230 can move within a certain range. That is, by moving the movable scanner 230, a plurality of laser beams L2 can be precisely irradiated onto the mask base material 110, thereby finely processing the vapor deposition pattern PA .

Further, although not shown, the laser processing apparatus 20 may further include an optical mirror. The optical mirror is disposed on the mask base material 110 so as to transmit a part of the laser beam L2 passing through the scanner 230 and reflect the other part of the laser beam L2. That is, the vapor deposition pattern PA can be precisely processed by selectively transmitting or reflecting the laser beam L2 irradiated toward the mask base material 110 by the optical mirror.

Thus, the mask base material 110 is laser-processed to form the evaporation mask 101 having the evaporation pattern PA. The mask base material 110 according to an embodiment of the present invention is laser processed in a state of being closely contacted with the first electrode 130 so that the foreign matter between the stage 300 and the mask base material 110, It is possible to prevent defective fabrication of the vapor deposition pattern PA due to the heat treatment.

When the deposition mask 101 including the deposition pattern PA is formed, the deposition mask 101 is separated from the first electrode 130 as shown in FIG. 3 (S35).

According to the method of manufacturing an evaporation deposition mask according to an embodiment of the present invention, precision of the evaporation deposition pattern PA can be improved by laser processing without separating the first electrode 130 and the mask base material 110.

Hereinafter, another embodiment of the present invention will be described with reference to FIG. The description of the same configuration as that of the embodiment of the present invention will be omitted for the convenience of explanation.

4 is a view illustrating a method of manufacturing a deposition mask according to another embodiment of the present invention.

4, another embodiment of the present invention differs from the first embodiment of the present invention in that a stage (300 in FIG. 2C) in which the first electrode 130 and the mask base material 110 are disposed during laser processing, Can be omitted.

In detail, the mask base material 110 is laser-processed in a state of being in close contact with the first electrode 130, so that the stage can be omitted. In other words, the first electrode 130 according to another embodiment of the present invention can serve as a stage for supporting and fixing the mask base material 110.

The first electrode 130 may be formed of any one of stainless steel (SUS), invar alloy, nickel (Ni), cobalt (Co), nickel alloy, nickel-cobalt alloy and iron (Fe) alloy. In contrast, the stage can generally be made of a glass material. Accordingly, the first electrode 130 made of a metal material has higher thermal conductivity than a general stage, and thermal deformation and oxidation of the mask base material 110 can be prevented during laser processing. Thus, the accuracy of the vapor deposition pattern PA can be improved.

Hereinafter, another embodiment of the present invention will be described with reference to FIG. The description of the same configuration as that of the embodiment of the present invention will be omitted for the convenience of explanation.

5 is an exploded perspective view illustrating a deposition mask assembly according to another embodiment of the present invention.

Referring to FIG. 5, another embodiment of the present invention is that the deposition mask assembly 11 may include a plurality of division masks. That is, the deposition mask 103 may be formed of a plurality of divided masks.

For example, a divided mask including the evaporation pattern PA can be formed by forming the mask base material 110 corresponding to the size of one divided mask and then laser-processing the same.

At this time, each divided mask is formed by laser processing in a state in which the mask base material 110 is in close contact with the first electrode 130, as in the embodiment of the present invention, can do. Thus, the accuracy of the vapor deposition pattern PA can be improved.

As the size of the display device becomes larger, the size of the vapor deposition mask assembly 11 is also increased. As a result, the bending and deflection phenomenon of the vapor deposition mask is largely generated. The deposition mask assembly 11 according to another embodiment of the present invention includes the deposition mask 103 formed of a plurality of divided masks to minimize the warping and sagging phenomenon, The problem that the uniformity is lowered can be prevented. Thus, the lifetime and reliability of the display device can be improved.

Hereinafter, referring to FIG. 6, a deposition process of a display device using the deposition mask assembly according to an embodiment of the present invention will be described in detail.

6 is a cross-sectional view illustrating a deposition process of a display device using an evaporation mask assembly according to an embodiment of the present invention.

6, a deposition process equipment according to an embodiment of the present invention includes an evaporation mask assembly 10, a fixing member 630, a magnet unit 620, an evaporation source 640, and a chamber 650 do.

The deposition mask assembly 10 includes a frame 102 and an evaporation mask 101 and is positioned at an upper portion within the chamber 650 to face the deposition source 640.

The fixing member 630 supports the edge of the deposition mask assembly 10. The fixing member 630 is disposed outside the movement path of the organic material supplied from the evaporation source 640 to the substrate S. [

The magnet unit 620 is positioned opposite the evaporation mask assembly 10 with the substrate S being an evaporation object sandwiched therebetween. The vapor deposition mask 101 of the vapor deposition mask assembly 10 can be brought into close contact with the substrate S through the magnetic force from the magnet unit 620. [

The evaporation source 640 is positioned below the evaporation mask assembly 10 and supplies the organic material to the substrate S through the evaporation pattern PA of the evaporation mask 101. That is, the organic material is supplied toward the deposition surface of the substrate S positioned at the upper portion in the chamber 650.

The evaporation source 640 may be in the form of a crucible containing an organic material therein, and may be deposited on the substrate S by evaporating the organic material by heat. The deposition process equipment may further include a heater (not shown) for heating the organic material. A heater (not shown) is provided on both sides of the evaporation source 640 to heat the evaporation source 640 to heat and sublimate the organic substances contained in the evaporation source 640.

The chamber 650 provides a space through which the deposition process proceeds. The chamber 650 is connected to a vacuum pump (not shown) such as a TMP (Turbo Molecular Pump) to maintain the chamber 650 in a vacuum state during the deposition process. The chamber 650 may further include a blocking plate (not shown) arranged to surround the inner wall surface. The barrier plate prevents the organic material that is not deposited on the substrate S among the organic materials ejected from the deposition source 640 from being adsorbed on the inner wall surface of the chamber 650.

The substrate S is placed on the deposition mask assembly 10. The substrate S may be arranged to overlap the opening area OP of the deposition mask assembly 10. [ In addition, the substrate S may be spaced apart from the top of the deposition mask assembly 10 by a certain distance.

Although not shown, the deposition process equipment includes a thickness monitoring sensor for measuring the velocity of the evaporating organic material, a thickness controller for controlling the deposition source 640 according to the measured thickness, And a shutter that can block the evaporated organic material from the evaporator 640. The deposition process equipment may further include a aligner and a CCD camera disposed outside the chamber 650 for aligning the substrate S and the deposition mask assembly 10.

A process of depositing the deposition material on the deposition surface of the substrate S will be briefly described below.

First, the deposition mask assembly 10 is fixed to the fixing member 630, and the substrate S is disposed on the deposition mask 101.

Subsequently, an evaporation source 640 located in the lower portion of the chamber 650 ejects the organic material toward the deposition mask assembly 10. [ In detail, when power is applied to the heater connected to the evaporation source 640, the evaporation source 640 containing the organic substance is heated, thereby heating and sublimating the organic substance, . At this time, the inside of the chamber 650 is maintained at a high degree of vacuum and a high temperature.

When the organic material is sprayed, an organic material is deposited on the deposition surface of the substrate S by the deposition pattern PA formed on the deposition mask 101. By repeating this process, a multi-layered organic thin film can be formed on the substrate S.

Hereinafter, referring to FIG. 7, an organic light emitting diode display manufactured using an evaporation mask assembly according to an embodiment of the present invention will be described in detail.

FIG. 7 is a cross-sectional view illustrating an organic light emitting diode display manufactured using an evaporation mask assembly according to an embodiment of the present invention. Referring to FIG.

7, the OLED display 700 includes a base substrate 711, a barrier film 712, a semiconductor active layer 713, a gate insulating film 717, an interlayer insulating film 719, a source electrode 720, A drain electrode 721, a passivation film 722, a planarization film 723, a pixel defining layer 724, an organic light emitting diode OLED, and a sealing portion 740.

The base substrate 711 may be made of an insulating material having flexibility. For example, the base substrate 711 may be formed of a material such as polyimide (PI), polycarbonate (PC), polyethersulphone (PES), polyethylene terephthalate (PET), polyethylene naphthalate naphthalate (PEN), polyarylate (PAR), fiberglass reinforced plastic (FRP), and the like. Alternatively, the base substrate 711 may be a glass substrate. The base substrate 711 may be transparent, translucent, or opaque.

The barrier film 712 is disposed on the base substrate 711. The barrier film 712 may be arranged to cover the entire upper surface of the base substrate 711. The barrier film 712 may be formed of an inorganic film or an organic film. The barrier film 712 may be formed of a single film or may be formed of a multilayer film. For example, the barrier film 712 may be formed of an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), aluminum oxide (AlO), aluminum nitride (AlON) Polyimide, polyester, and the like.

The barrier film 712 serves to block oxygen and moisture, prevents diffusion of moisture or impurities through the base substrate 711, and provides a flat surface on the top of the base substrate 711. A thin film transistor (TFT) is formed on the barrier film 712. Thin film transistor (TFT) according to an embodiment of the present invention shows a top gate type thin film transistor (TFT), but the present invention is not limited thereto, and the thin film transistor (TFT) of another structure such as a bottom gate type (TFT).

A semiconductor active layer 713 is disposed on the barrier film 712. The semiconductor active layer 713 includes a source region 714, a drain region 715, and a channel region 716. A source region 714 and a drain region 715 are formed by doping the semiconductor active layer 713 with N type or P type impurity ions. The region between the source region 714 and the drain region 715 is a channel region 716 in which no impurity is doped.

The semiconductor active layer 713 may be made of polysilicon or amorphous silicon. In addition, the semiconductor active layer 713 may be formed of an oxide semiconductor. For example, the oxide semiconductor may be a 4, 12, 13, or 14 Group metal such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), cadmium (Cd), germanium (Ge) ≪ / RTI > elements and combinations thereof.

A gate insulating film 717 is disposed on the semiconductor active layer 713. The gate insulating film 717 may include an inorganic film such as silicon oxide, silicon nitride, or a metal oxide. The gate insulating film 717 may be a single layer or a multilayer structure.

A gate electrode 718 is disposed on the gate insulating film 717. The gate electrode 718 may include a single layer or a multi-layered film of Au, Ag, Cu, Ni, Pt, Pd, Al, Mo or Cr or an alloy such as Al: Nd or Mo: W.

An interlayer insulating film 719 is disposed on the gate electrode 718. The interlayer insulating film 719 may be made of an insulating material such as silicon oxide, silicon nitride, or the like. Further, the interlayer insulating film 719 may be formed of an insulating organic film.

A source electrode 720 and a drain electrode 721 are disposed on the interlayer insulating film 719. Particularly, a contact hole is formed in the gate insulating film 717 and the interlayer insulating film 719. The source region 714 and the source electrode 720 are electrically connected to each other through the contact hole. The source electrode 715 and the drain electrode 721 may be electrically connected.

A passivation film 722 is disposed on the source electrode 720 and the drain electrode 721. The passivation film 722 may be formed of an inorganic film such as silicon oxide or silicon nitride, or an organic film.

A planarization film 723 is disposed on the passivation film 722. The planarizing film 723 includes an organic film such as acryl, polyimide, or BCB (Benzocyclobutene).

An organic light emitting device OLED may be formed on the thin film transistor TFT. The organic light emitting diode OLED includes a pixel electrode 725, a common electrode 727 and an intermediate layer 726 interposed between the pixel electrode 725 and the common electrode 727.

The pixel electrode 725 is electrically connected to one of the source electrode 720 and the drain electrode 721 through the contact hole.

The pixel electrode 725 functions as an anode, and may be formed of various conductive materials. The pixel electrode 725 may be a transparent electrode or a reflective electrode. For example, when the pixel electrode 725 is a transparent electrode, the pixel electrode 725 may include ITO, IZO, ZnO, In ₂ O ₃ , and the like. When the pixel electrode 725 is a reflective electrode, the pixel electrode 725 is formed of a reflective film made of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, ITO, IZO, ZnO, In ₂ O ₃ and the like can be formed on the upper part.

A pixel defining layer (PDL) 624 is disposed on the planarization layer 723 to cover the edge of the pixel electrode 725. The pixel defining layer 724 defines the light emitting region of each sub-pixel by surrounding the edge of the pixel electrode 725.

The pixel defining layer 724 is made of an organic material or an inorganic material. For example, the pixel defining layer 724 may be formed of an organic material such as polyimide, polyamide, benzocyclobutene, acrylic resin, phenol resin or the like, or an inorganic material such as SiNx. The pixel defining layer 724 may be composed of a single film or may be composed of multiple films.

An intermediate layer 726 is disposed on the pixel electrode 725. The intermediate layer 726 may be disposed in the exposed region by etching a part of the pixel defining film 724. [ The intermediate layer 726 can be made by a deposition process.

The intermediate layer 726 may be composed of a low molecular organic material or a high molecular organic material. The intermediate layer 726 may include an emissive layer (EML). The intermediate layer 726 includes an organic light emitting layer and a hole injecting layer (HIL), a hole transporting layer (HTL), an electron transporting layer (ETL) And an electron injection layer (EIL). In an embodiment of the present invention, the intermediate layer 726 includes an organic light emitting layer, and may further include various other functional layers.

A common electrode 727 is disposed on the intermediate layer 726. The common electrode 727 may be a transparent electrode.

The pixel electrodes 725 may be arranged in correspondence with the openings of the pixel defining layers 724. On the other hand, the common electrode 727 can be deposited on the front surface of the base substrate 711. Alternatively, the common electrode 727 may have a specific pattern instead of a frontal deposition. The pixel electrode 725 and the common electrode 727 may be stacked with their positions being opposite to each other.

On the other hand, the pixel electrode 725 and the common electrode 727 are insulated from each other by the intermediate layer 726. When a voltage is applied to the pixel electrode 725 and the common electrode 727, visible light is emitted from the intermediate layer 726 to realize an image that can be recognized by the user.

An encapsulation 740 is disposed on the organic light emitting diode OLED. The seal 740 protects the intermediate layer 726 and other thin films from external moisture, oxygen, and the like.

The sealing portion 740 may have a structure in which at least one organic film or inorganic film is stacked. For example, the sealing unit 740 is an epoxy, polyimide, polyethylene terephthalate, polycarbonate, polyethylene, and at least one organic layer (741, 642), such as polyacrylates, silicon oxide (SiO _2), Silicon Nitride nitride (SiNx), aluminum oxide (Al ₂ O _3), titanium oxide (TiO _2), zirconium oxide (ZrOx), zinc oxide (ZnO) at least one of the stacked inorganic film (743, 744, 745), such as Lt; / RTI >

The sealing portion 740 may have at least one organic film 741 and 742 and the inorganic film 743, 744, and 745 may have a structure of at least two layers. The uppermost layer 745 exposed to the outside of the sealing portion 740 may be formed of an inorganic film to prevent moisture permeation to the organic light emitting device.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You can understand that you can. It is therefore to be understood that the embodiments described above are illustrative in all aspects and not restrictive.

10: vapor deposition mask assembly 101: vapor deposition mask
102: frame 110: mask base material
130: first electrode 140: second electrode
20: laser processing device 210: laser oscillation part
220: spectroscopic section 230: scanner
300: stage 310: electrostatic chuck

Claims (12)

Electroplating to form a mask base material on the first electrode;
Disposing the first electrode and the mask base material in a laser processing apparatus;
Laser processing the mask base material to form an evaporation mask having an evaporation pattern; And
And separating the vapor deposition mask from the first electrode. The method according to claim 1,
Further comprising the step of cleaning the first electrode and the mask base material after the step of forming the mask base material on the first electrode. 3. The method of claim 2,
In the step of cleaning the first electrode and the mask base material,
A spray method in which a cleaning liquid is sprayed to the first electrode and the mask base material or a dip method in which the first electrode and the mask base material are immersed in a cleaning liquid is applied. The method according to claim 1,
Wherein the first electrode and the mask base material are mounted on a stage in the step of disposing the first electrode and the mask base material in a laser processing apparatus. 5. The method of claim 4,
Wherein the stage is made of glass. 5. The method of claim 4,
Wherein the stage further comprises an electrostatic chuck for adsorbing the first electrode and the mask base material. The method according to claim 1,
The laser processing apparatus includes:
A laser oscillation unit for oscillating laser light;
A splitter for splitting the oscillated laser beam into a plurality of laser beams; And
And a scanner for adjusting an irradiation position of the laser beam. 8. The method of claim 7,
Wherein the laser beam is irradiated in a direction perpendicular to the mask base material. The method according to claim 1,
Wherein the first electrode is made of any one of stainless steel (SUS), Invar alloy, nickel (Ni), cobalt (Co), nickel alloy, nickel-cobalt alloy and iron . The method according to claim 1,
Wherein the mask base material is composed of 30% or more and 50% or less of nickel (Ni), and 50% or more and 70% or less of iron (Fe). 11. The method of claim 10,
Wherein the mask base material further comprises at least one of cobalt (Co), copper (Cu), and carbon (C). The method according to claim 1,
Wherein the thickness of the vapor deposition mask is 0.1 占 퐉 to 50 占 퐉.

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