CN104392935A - Metallization method of power device module encapsulation-used ceramic substrate - Google Patents
Metallization method of power device module encapsulation-used ceramic substrate Download PDFInfo
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- CN104392935A CN104392935A CN201410626826.9A CN201410626826A CN104392935A CN 104392935 A CN104392935 A CN 104392935A CN 201410626826 A CN201410626826 A CN 201410626826A CN 104392935 A CN104392935 A CN 104392935A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 120
- 239000000758 substrate Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000001465 metallisation Methods 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 55
- 238000007747 plating Methods 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 230000008719 thickening Effects 0.000 claims abstract description 20
- 239000011241 protective layer Substances 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 25
- 239000010949 copper Substances 0.000 claims description 25
- 238000004806 packaging method and process Methods 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 12
- 238000002309 gasification Methods 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000012670 alkaline solution Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- XLSMFKSTNGKWQX-UHFFFAOYSA-N hydroxyacetone Chemical compound CC(=O)CO XLSMFKSTNGKWQX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a metallization method of a power device module encapsulation-used ceramic substrate. The metallization method comprises the following steps that: a ceramic substrate to be processed is cleaned, and impurities and dirt on the surface of the ceramic substrate are removed; a mask is manufactured on the surface of the ceramic substrate, wherein the mask will not be decomposed and gasified under the irradiation of laser; a circuit layer is formed on the ceramic substrate, and the laser is utilized to directly write a required circuit pattern on the ceramic substrate coated with the mask, and therefore, a circuit can be directly written out by the laser; metal film layer plating is performed: the ceramic substrate with the mask, on which the laser directly writes out the circuit, is plated with a metal film layer; the mask is removed, so that the metal film layer formed on the mask can be stripped from the ceramic substrate; a metal thickening layer is plated on the circuit layer; and a metal protective layer is plated on the metal thickening layer, so that metallization processing of the ceramic substrate can be completed. According to the metallization method of the invention, the circuit can be directly written out on the ceramic substrate with the mask through the laser. The metallization method has the advantages of high precision, fast speed and high repeatability, and can be implemented on non-planar three-dimensional ceramic, and can assist in reducing process cost, and is more environmentally friendly.
Description
Technical field
the present invention relates to power device, module (comprising LED and laser) encapsulation field, particularly relate to high thermal conductivity coefficient ceramic packaging substrate metallizing art.Especially a kind of method for metallising of conducting channel obtaining high-fineness, stable physical property on ceramic substrate.
Background technology
Along with improving constantly of electronics and photoelectric power device power and integrated level, the heat dissipation problem of power device and module is more outstanding, how effectively the heat that device and module distribute to be derived in time that to dissipate be the new challenge bringing encapsulation field.The plurality of advantages such as ceramic substrate material is good with its excellent thermal conductivity, air-tightness, good insulating, high frequency characteristics outstanding, chemical stability is good, thermal stability is strong, are widely used in the fields such as great power LED/LD, power electronic, Electronic Packaging, mixing microelectronics and multi-chip module.Ceramic surface metallization is the important step of ceramic packaging application, high-quality metallized ceramic substrate should have high heat conductance and large current load ability, the harsh environments of high temperature, high pressure, high wearing and tearing and deep-etching can be suitable for, to meet the application requirement that power device and module package are applied to various occasion.
The metallized method of current ceramic base plate surface is numerous, sums up and out mainly contains following several large class:
1, thick film (containing low temperature co-fired method LTTC and high temperature co-firing method HTTC).Thick film metallization technology generally adopts paste containing frit or red ink paste used for seals, and ceramic substrate forms sealing-in metal level, conductor (wiring) and resistance etc. by silk screen printing, forms braze metal layer, circuit and lead contact etc. through sintering.Thick film ink is generally the metal dust of 1 ~ 5 μm by granularity, add the glass binder of a few percent, mixing through ball milling forms to add organic carrier (comprising organic solvent, thickener and surfactant etc.) again, thick film ink not only will have low resistance, and will have good bond strength with substrate.Thick film advantage is that technique is simple, and can make multilayer circuit, be suitable for automation and Multi-varieties and Small-batch Production, the disposable input of equipment is little.Its shortcoming is that the existence of glassy phase considerably increases thermal resistance.Bond strength is still not high enough, and particularly high temperature bond intensity is low, and temperature influence is large.
2, direct copper method (DBC).Direct copper technology utilizes directly being applied by copper containing oxygen eutectic liquid of copper to be connected on pottery, its general principle is exactly between copper and pottery, introduce appropriate oxygen element before deposited termination process or in process, in about 1070 DEG C scopes, copper and oxygen form Cu-O eutectic liquid, DBC technology utilizes this eutectic liquid to generate compound phase with ceramic substrate generation chemical reaction on the one hand, infiltrates the combination that Copper Foil realizes ceramic substrate and copper coin on the other hand.DBC substrate does not use adhesive in preparation process, thus good heat conductivity, and intensity is high, and insulating properties is strong, can obtain very thick metal electrode.But DBC requires very harsh to technological temperature precision, if the temperature of production technology is stable not, will certainly cause the phenomenon that yield is on the low side.And though DBC prepares metallic circuit with lithography process, but because its technological ability limits, the lower limit of metal copper foil thickness is about about 150um, this makes the resolution upper limit of its metallic circuit also be only about 150 (with depth-to-width ratio 1:1 for standard), is difficult to be competent at concerning DBC method for metallising fine circuitry
3, direct copper plating method (DPC).First ceramic substrate is done pretreatment cleaning in DPC technology disclosed in patent CN101460014A, film specialized fabrication technology-vacuum coating mode sputter on ceramic substrate is utilized to be incorporated into copper metal composite layer, then completed circuit with the photoresistance of yellow light lithography make by multiple exposure, development, etching, striping technique, the last thickness increasing circuit again in plating/electroless deposition mode, after photoresistance removes, namely complete metal line make, its technique bond material and film process technology, its product is the ceramic heat-dissipating substrate in recent years the most generally used.But its process complexity higher (tens of roads technique), require higher to technology integration ability, this make to stride into DPC industry and can the technical threshold of steady production and disposable apparatus to drop into threshold all relatively high.
4. laser processing method for metallising.Laser processing method for metallising wiring precision is high, and efficiency is high, favorable repeatability, and can avoid the steps such as the graphical circuit of photoetching development.Patent CN203261570U discloses one and directly obtain active layer by laser processing on three-dimensional pottery, then thickeies metallic circuit by plating or chemical plating method.The method obtains metallized ceramic by less processing step.Its shortcoming is that on pottery, directly plate obtained metallic circuit by electroplating chemical relative with ceramic substrate adhesiveness poor, is difficult to meet high power device module package demand.
Patent CN103094126A discloses the preparation method of the trickle three-dimensional conducting wire of a kind of ceramic components.First at ceramic surface vacuum splashing and plating layer of metal film, then utilize laser to remove selectively metalized portion, adopt plating thickening technology afterwards.The method cost is low, wiring precision is high, can realize stereo circuit.But some pottery such as aluminum nitride ceramic substrate of high thermal conductivity coefficient can form one deck aluminum metal layer in the inswept region of laser in laser processing procedure, very difficult realization is removed selectively.The method can not realize circuit that is completely discrete, that be not namely interconnected and thicken, and needs to use the inadequate environmental protection of chemical etch step.Therefore, be necessary to develop that practicality is stronger, applicability is wider, process complexity and the lower ceramic substrate method for metallising of cost.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method for metallising of power device module ceramic substrate for packaging, by laying mask on ceramic substrate, then utilize laser direct-writing circuit, precision be high, speed is fast, favorable repeatability and can realizing on nonplanar ceramic substrate.
In order to solve the problems of the technologies described above, the present invention takes following technical scheme:
A method for metallising for power device module ceramic substrate for packaging, comprises the following steps:
Clean ceramic substrate to be processed, remove impurity and the dirt of this ceramic base plate surface;
Make mask at ceramic base plate surface, this mask is meeting decomposition gasification under laser irradiation;
Laser direct-writing circuit, ceramic substrate forms circuit layer, utilizes laser directly to write out required circuitous pattern on the ceramic substrate being covered with mask;
Plating rete, plating rete on the band mask ceramic substrate writing out circuit at laser straight;
Removing mask, makes the metallic diaphragm formed on mask peel off mutually with ceramic substrate;
Plating thickening layer on circuit layer;
Plating protective layer on metal thickening layer, completes the metallization process of ceramic substrate.
Described plating thickening layer thickeies or chemical plating thickening for carrying out plating in electro-plating roller.
The metal material that described metal thickening layer is selected is copper and/or nickel.
The metal material that described coat of metal is selected is silver or golden.
Described mask is formed by the photosensitive-ink or photoresist being sprayed on ceramic base plate surface.
During described removing mask, ceramic substrate is put into alkaline solution.
Vacuum Deposition mode is preferably adopted during described plating rete.
The thickness of described metallic diaphragm is 0.5 ~ 2 micron.
The metal material that described metallic diaphragm is selected is the combination of titanium and nickel, or the combination of titanium and copper, or nickel, or copper.
The present invention compared with prior art has following beneficial effect:
1, the mode of laser direct-writing is adopted directly to write out circuit on the ceramic substrate being laid with mask, can the steps such as photoetching development be avoided, and obtain the very high circuitous pattern of fineness, decrease processing step, simplify processing step, reduce process costs.
2, in the process of laser direct-writing circuit, can be activated by the ceramic base plate surface of laser scanning, plating rete effectively can increase the adhesive bond strength of metal circuitry and ceramic substrate more after the activation, the wiring precision of the metallized ceramic substrate of acquisition is high, metal and ceramic adhesive bond strength strong.
3, thicken in plating in the step of electric circuit metal layer and select barrel plating or chemical plating process, metal circuitry can be thickeied on the circuit of completely discrete (not being communicated with completely), and the circuit layer surface uniform obtained is level and smooth.
4, adopt the ceramic material of high heat conduction as power device module base plate for packaging, perfect heat-dissipating, mechanical strength be high, chemical stability and thermal stability all good
In addition, method for metallising provided by the present invention can also be implemented at nonplanar three-dimensional ceramic surface.
Accompanying drawing explanation
Accompanying drawing 1 is flow process principle schematic of the present invention;
Accompanying drawing 2 is for being laid with the ceramic substrate cross-sectional view of mask;
Accompanying drawing 3 is the ceramic substrate cross-sectional view by laser direct-writing circuit;
Accompanying drawing 4 is the cross-sectional view after ceramic substrate plating rete;
Accompanying drawing 5 is that ceramic substrate is removed the cross-sectional view after mask;
Accompanying drawing 6 is the ceramic substrate cross-sectional view after plating thickening layer;
Accompanying drawing 7 is the ceramic substrate cross-sectional view that plating protective layer aft-loaded airfoil completes.
Embodiment
For the ease of the understanding of those skilled in the art, below in conjunction with accompanying drawing, progressive description explanation is done to the present invention.
As shown in Figure 1, present invention is disclosed a kind of method for metallising of power device module ceramic substrate for packaging, comprise the following steps:
Step 1, cleans ceramic substrate to be processed, removes impurity and the dirt of this ceramic base plate surface.Ceramic substrate has high thermal conductivity coefficient, and all types of ceramic substrates is all applicable.Dissimilar according to ceramic substrate, by the region scanned by ceramic substrate while laser scanning can be activated or be formed metal level.During cleaning, available acetone alcohol washes, then to be immersed in ultrasonic instrument ultrasonic cleaning 5 ~ 8 minutes with clear water, then ceramic substrate is dried up, to treat that next step carries out smoothly.Certainly, other solution can also be adopted to clean, can effectively the impurity of ceramic base plate surface and dirt be removed, concrete cleaning is common practise, no longer describes in detail at this.
Step 2, makes mask at ceramic base plate surface, and this mask can decomposition gasification under laser irradiation, and is easy to follow-up and removes.In the present embodiment, photosensitive-ink is selected to make mask, or or photoresist formation mask.Mask is formed in ceramic base plate surface spraying photosensitive-ink.Mask can be made up of a kind of material.In order to reach different application demands, mask also can be made up of the material that multilayer is different, and mask needs to guarantee be decomposed gasification under the irradiation of laser.The thickness of mask can be determined according to metal layer thickness required for circuit, generally all can make from one micron to some tens of pm.In addition, mask can be one deck, two-layer or more multi-layered, determines according to real needs, at this and indefinite.As shown in Figure 2, mask 20 is laid on the surface of ceramic substrate 10.
Step 3, laser direct-writing circuit, ceramic substrate forms circuit layer, utilizes the laser assembled directly to write out required circuitous pattern on the ceramic substrate being covered with mask.By subregion that laser-light write is crossed on ceramic substrate, the mask material gasification that can be decomposed is fallen, circuit is made to be written on ceramic substrate, and according to dissimilar ceramic substrate, the scanned ceramic substrate of Stimulated Light can be activated or directly be formed layer of metal conductive layer, is conducive to the adhesive force that the later stage thickeies circuit layer and ceramic substrate.Not by the region of laser scanning, then mask is still attached to ceramic base plate surface.As shown in Figure 3, the region that ceramic substrate 10 Stimulated Light is directly write, mask 20 is decomposed gasification, and at ceramic substrate 10 circuit forming surface layer 30, the mask in other regions is not because being subject to the scanning and irradiation of laser, then can not be decomposed gasification.When selecting laser, wavelength can be adopted to be the ultraviolet laser of 355nm, peak power 5W.Certainly, the wavelength of laser and power root are not limited to above cited parameter, wavelength from infrared to ultraviolet, peak power at 1W to tens of watts.
Step 4, plating rete, plating rete on the band mask ceramic substrate writing out circuit at laser straight.The mode of preferred employing Vacuum Deposition carries out the plating of metallic diaphragm, and as modes such as vacuum sputtering, vacuum evaporation, electron beam evaporations, the metal material that this metallic diaphragm is selected is the combination of titanium and nickel, titanium and the combination of copper, separately nickel or copper separately.The thickness of metallic diaphragm is between 0.5 ~ 2 micron, and as being 0.5 micron, or 1 micron, or 1.5 microns, or 2 microns, concrete thickness sets according to actual needs flexibly.Certainly, other metals also can also be adopted to carry out the plating of metallic diaphragm, above enumerating is not limit.In the present embodiment, by the nickel metal film layer of electron beam evaporation vacuum evaporation one deck 0.8 microns thickness on ceramic substrate.As shown in Figure 4, owing to being the plating surface of ceramic substrate 10 being carried out to metallic diaphragm, therefore on circuit layer 30, form metallic diaphragm 40, and be also formed with metallic diaphragm 40 on the mask 20 of gasification that is not decomposed.
Step 5, removing mask, makes the metallic diaphragm formed on mask peel off mutually with ceramic substrate.In the present embodiment, as shown in Figure 5, mask is preferably formed by photosensitive-ink, ceramic substrate 10 sprays photosensitive-ink and forms mask 20, ceramic substrate 10 is put into alkaline solution (as NaOH, acetone solvent) in, can be removed after the mask 20 formed by photosensitive-ink runs into alkaline solution, thus the metallic diaphragm 40 be plated in step 4 on mask 20 is come off from ceramic substrate 10 stripping, make the circuit layer 30 ceramic substrate 10 only staying metal-plated membrane layer 40, until mask 20 and on metallic diaphragm 40 remove completely after ceramic substrate put into clear water and cleans.It should be noted that, that more than enumerates elects the material of mask as photosensitive-ink, is not to limit.Except photosensitive-ink, if mask can also with such as described in step 2 can meet laser time be decomposed gasification material.When selecting other materials to form photosensitive-ink, now only need from prior art, select the corresponding solution that can dissolve this respective material, ensure that ceramic substrate is placed in corresponding solution and can remove mask smoothly, the metallic diaphragm on mask is peeled off mutually with ceramic substrate.Certainly, other also can also be adopted can be removed mask by means known in those skilled in the art, do not describe in detail one by one at this.
Step 6, plating thickening layer on circuit layer.Preferred employing copper or nickel, or the combination of copper and mickel.And adopt barrel plating mode to electroplate, ceramic substrate is put into the cylinder of rolling-plating equipment, thicken the above-mentioned circuit layer being coated with metallic diaphragm by the mode of plating.According to embody rule demand, the thickness of this metal thickening layer at several microns to some tens of pm.In the present embodiment, as shown in Figure 6, as a kind of preferred version, can select and first plate the mode that one deck copper plates one deck nickel again, the cylinder that the ceramic substrate 10 first step 5 obtained puts into rolling-plating equipment plates the layers of copper that thickness is 20 microns, the cylinder again this ceramic substrate being put into another rolling-plating equipment plates the nickel dam that thickness is 5 microns, thus forms metal thickening layer 50.The object done like this facilitates follow-uply to plate guard metal layer.Certainly, the concrete thickness of the nickel dam of the layers of copper of first plating and rear plating can also be other numerical value, and layers of copper is generally better more than 15 microns, and nickel dam is then better more than 2 microns.It should be noted that, above employing barrel plating is a kind of preferred version, is not to limit, such as, chemical plating mode can also be adopted to thicken, as combination or other metals of electroless copper, nickel or copper and mickel.The advantage of barrel plating processing can thicken metal on completely discrete circuit to obtain level and smooth circuit layer.
Step 7, plating protective layer on metal thickening layer, completes the metallization process of ceramic substrate.The material that this coat of metal adopts preferably adopts silver or gold.By metal thickening layer on the circuit layer of previous step 6 of the method for chemical plating plates the silver of one deck about 6 microns as surface protection metal level 60.This step also can adopt the mode of plating to carry out, and in order to meet higher requirement, can also substitute silver layer by plating or chemical plating layer of surface layer gold.As shown in Figure 7, plating protective layer 60 again on metal thickening layer 50, thus complete the metallization process to ceramic substrate.
By above step, this civilized method both in the enterprising row metalization processing of the ceramic substrate of plane, can also can be implemented at nonplanar three-dimensional ceramic surface.
Implemented by above method, method for metallising provided by the present invention has obvious advantage,
1, reproducible, processing step is simple and easy, cost is low.Eliminate the step such as photoetching, development, etching conventional in base plate for packaging metallization, not only reduce process cycle and cost, and more environmental protection.
2, adopt the ceramic material of high heat conduction as power device module base plate for packaging, perfect heat-dissipating, mechanical strength be high, chemical stability and thermal stability all good.
3, adopt the mode of laser direct-writing to avoid the steps such as photoetching development, and obtain the very high circuitous pattern of fineness; Ceramic substrate first can effectively be increased at plating rete by laser activation the adhesive bond strength of metal circuitry and ceramic substrate.
4, thicken in plating in the step of electric circuit metal layer and select barrel plating technique, metal circuitry can be thickeied on completely discrete circuit, and the circuit layer surface uniform obtained is level and smooth.
5, method for metallising provided by the present invention can also be implemented at nonplanar three-dimensional ceramic surface.
It should be noted that, the above is not limitation of the invention, and under the prerequisite not departing from creation design of the present invention, any apparent replacement is all within protection scope of the present invention.
Claims (9)
1. a method for metallising for power device module ceramic substrate for packaging, comprises the following steps:
Clean ceramic substrate to be processed, remove impurity and the dirt of this ceramic base plate surface;
Make mask at ceramic base plate surface, this mask is meeting decomposition gasification under laser irradiation;
Laser direct-writing circuit, ceramic substrate forms circuit layer, utilizes laser directly to write out required circuitous pattern on the ceramic substrate being covered with mask;
Plating rete, plating rete on the band mask ceramic substrate writing out circuit at laser straight;
Removing mask, makes the metallic diaphragm formed on mask peel off mutually with ceramic substrate;
Plating thickening layer on circuit layer;
Plating protective layer on metal thickening layer, completes the metallization process of ceramic substrate.
2. the method for metallising of power device module ceramic substrate for packaging according to claim 1, is characterized in that, described plating thickening layer thickeies or chemical plating thickening for carrying out plating in electro-plating roller.
3. the method for metallising of power device module ceramic substrate for packaging according to claim 2, is characterized in that, the metal material that described metal thickening layer is selected is copper and/or nickel.
4. the method for metallising of power device module ceramic substrate for packaging according to claim 3, is characterized in that, the metal material that described coat of metal is selected is silver or golden.
5. the method for metallising of the power device module ceramic substrate for packaging according to any one of Claims 1 to 4, is characterized in that, described mask is formed by the photosensitive-ink or photoresist being sprayed on ceramic base plate surface.
6. the method for metallising of power device module ceramic substrate for packaging according to claim 5, is characterized in that, during described removing mask, ceramic substrate is put into alkaline solution.
7. the method for metallising of power device module ceramic substrate for packaging according to claim 6, is characterized in that, preferably adopts Vacuum Deposition mode during described plating rete.
8. the method for metallising of power device module ceramic substrate for packaging according to claim 7, is characterized in that, the thickness of described metallic diaphragm is 0.5 ~ 2 micron.
9. the method for metallising of power device module ceramic substrate for packaging according to claim 8, is characterized in that, the metal material that described metallic diaphragm is selected is the combination of titanium and nickel, or the combination of titanium and copper, or nickel, or copper.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105376933A (en) * | 2015-12-22 | 2016-03-02 | 乐健科技（珠海）有限公司 | Ceramic-based printed circuit board and manufacture method thereof, as well as LED module and manufacture method thereof |
| CN106793529A (en) * | 2016-12-07 | 2017-05-31 | 江苏华功第三代半导体产业技术研究院有限公司 | The preparation method and ceramic packaging substrate of a kind of ceramic packaging substrate |
| CN108257876A (en) * | 2018-01-11 | 2018-07-06 | 苏州久奥新材料有限公司 | A kind of active metal brazing nitride ceramics substrate and its graphic method |
| CN108374144A (en) * | 2017-01-31 | 2018-08-07 | 三星显示有限公司 | The manufacturing method of deposition mask |
| CN108598007A (en) * | 2018-01-16 | 2018-09-28 | 安徽省祁门县黄山电器有限责任公司 | A kind of method of aluminium oxide or aluminium nitride ceramic substrate surface metalation |
| CN110459668A (en) * | 2019-08-16 | 2019-11-15 | 国网河南省电力公司邓州市供电公司 | A kind of preparation method of power LED heat dissipating substrate |
| CN111163589A (en) * | 2020-01-10 | 2020-05-15 | 广州睿邦新材料科技有限公司 | Preparation method of ceramic-based three-dimensional circuit |
| CN111277240A (en) * | 2020-03-07 | 2020-06-12 | 中国电子科技集团公司第二十六研究所 | Film layer structure of film bulk acoustic wave filter and preparation method thereof |
| CN112512221A (en) * | 2020-11-26 | 2021-03-16 | 娄底市安地亚斯电子陶瓷有限公司 | Preparation method of metal conductor-coated ceramic circuit substrate |
| CN115500011A (en) * | 2022-11-03 | 2022-12-20 | 四川富乐华半导体科技有限公司 | Positioning method for DPC ceramic substrate processing |
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| CN105376933B (en) * | 2015-12-22 | 2018-01-19 | 乐健科技（珠海）有限公司 | Ceramic base printed circuit board and preparation method thereof, LED module and preparation method thereof |
| CN105376933A (en) * | 2015-12-22 | 2016-03-02 | 乐健科技（珠海）有限公司 | Ceramic-based printed circuit board and manufacture method thereof, as well as LED module and manufacture method thereof |
| CN106793529B (en) * | 2016-12-07 | 2020-01-31 | 江苏华功第三代半导体产业技术研究院有限公司 | manufacturing method of ceramic packaging substrate and ceramic packaging substrate |
| CN106793529A (en) * | 2016-12-07 | 2017-05-31 | 江苏华功第三代半导体产业技术研究院有限公司 | The preparation method and ceramic packaging substrate of a kind of ceramic packaging substrate |
| CN108374144A (en) * | 2017-01-31 | 2018-08-07 | 三星显示有限公司 | The manufacturing method of deposition mask |
| CN108257876A (en) * | 2018-01-11 | 2018-07-06 | 苏州久奥新材料有限公司 | A kind of active metal brazing nitride ceramics substrate and its graphic method |
| CN108598007A (en) * | 2018-01-16 | 2018-09-28 | 安徽省祁门县黄山电器有限责任公司 | A kind of method of aluminium oxide or aluminium nitride ceramic substrate surface metalation |
| CN110459668A (en) * | 2019-08-16 | 2019-11-15 | 国网河南省电力公司邓州市供电公司 | A kind of preparation method of power LED heat dissipating substrate |
| CN110459668B (en) * | 2019-08-16 | 2020-12-25 | 国网河南省电力公司邓州市供电公司 | Preparation method of high-power LED heat dissipation substrate |
| CN111163589A (en) * | 2020-01-10 | 2020-05-15 | 广州睿邦新材料科技有限公司 | Preparation method of ceramic-based three-dimensional circuit |
| CN111163589B (en) * | 2020-01-10 | 2021-09-28 | 广州睿邦新材料科技有限公司 | Preparation method of ceramic-based three-dimensional circuit |
| CN111277240A (en) * | 2020-03-07 | 2020-06-12 | 中国电子科技集团公司第二十六研究所 | Film layer structure of film bulk acoustic wave filter and preparation method thereof |
| CN111277240B (en) * | 2020-03-07 | 2022-05-03 | 中国电子科技集团公司第二十六研究所 | Film layer structure of film bulk acoustic wave filter and preparation method thereof |
| CN112512221A (en) * | 2020-11-26 | 2021-03-16 | 娄底市安地亚斯电子陶瓷有限公司 | Preparation method of metal conductor-coated ceramic circuit substrate |
| CN115500011A (en) * | 2022-11-03 | 2022-12-20 | 四川富乐华半导体科技有限公司 | Positioning method for DPC ceramic substrate processing |
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