CN103188877B - The method that the quick high flexibility of a kind of ceramic circuit-board makes - Google Patents
The method that the quick high flexibility of a kind of ceramic circuit-board makes Download PDFInfo
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Abstract
The method that the quick high flexibility of a kind of ceramic circuit-board makes, comprise and laser is radiated at ceramic matrix surface, there is more than fracture threshold value in the chemical bond that control laser energy density reaches containing the compound of active ion, make ceramic matrix surface that chemical reaction occur and separate out active material as chemical plating catalysis source, the active material that reaction generates and matrix are enhanced primary treatment, wherein, for different ceramic materials, according to the chemical bond energy of ceramic material composition, select different lasing light emitters, by controlling Laser output average power, pulse repetition frequency, sweep speed, defocusing amount and trace interval and scanning pass, control laser energy and reach ceramic modified threshold value, ceramic matrix after laser modified is positioned over plating in chemical plating fluid, forms the coat of metal.By laser surface modification pottery, make metal conducting layer and matrix form enhanced primary treatment, greatly improve the adhesion of wiring board, its heat conductivility and electrical property also promote all to some extent.
Description
Technical field
The present invention relates to wiring board and make field, particularly relate to the method that the quick high flexibility of a kind of ceramic circuit-board makes.
Background technology
Along with integrated to height, the microminiaturized fast development of electronic technology, wire and the electronic devices and components of wiring board are more and more intensive, and its heat dissipation problem is more and more outstanding.Ceramic material has high-termal conductivity, good electrical property, and be ideal heat radiation and the encapsulating material of large scale integrated circuit of new generation, semiconductor module circuit and high power device, thus ceramic circuit-board obtains extensive concern and develops rapidly.Compared with traditional printed wiring board, ceramic circuit-board obviously has many advantages: excellent thermal conductivity, resistance to chemical attack, the superior electrical property such as the large and dielectric loss of insulation resistance is little, excellent high frequency, the mechanical strength be suitable for, is widely used in, in the products such as high density hybrid circuit, microwave power device, semiconductor power device, power electronic device, optoelectronic component, semiconductor refrigerating, having good development prospect.
The main production method of current ceramic circuit-board is still traditional chemical etching process, first ceramic substrate forms ceramic copper-clad plate by modes such as Copper Foil high temperature Direct Bonding, vacuum splashing and plating, vacuum pressing-combinings in inert gas, then circuit carries out to ceramic copper-clad plate shaping, plate, numerically controlled data collection and digital control hole drilling, cleaning, oven dry, hole metallization to be drawn through data encasement, light, pad pasting, exposure, development, etching, tin-lead alloy plating, move back film, corrosion ... etc. multiple flow process.
Such as: CN 102170755A discloses the production technology of ceramic mobile phone circuit board, its multilayer circuit board complex manufacturing technology, operation is many, pottery boring, oil removing, microetch, pickling, washing, dries, electroplating ventilating hole, overlay film, exposure, development, etching, takes off multiple flow processs such as film.Utility model CN 202127547 U discloses the profile of ceramic interconnect high-density circuit board, does not provide concrete manufacturing process.
CN201210198793.3 discloses a kind of preparation method of ceramic circuit board, adopt laser engraving, the effect produced is mainly ceramic matrix alligatoring, increases the collective ability of metal level and matrix, and mentions the physicochemical change making the generation of ceramic matrix surface certain.Which type of chemical change the not open ceramic matrix surface that specifically should make of the document produces, and does not also disclose the means and condition that realize producing chemical change.
Existing line plate manufacture craft more and more can not meet the demand for development of circuit board, is embodied in that manufacturing process is many, speed is slow, precision is low, error is large, energy consumption is large, waste is large, environmental pollution is serious.In addition, the greatest weakness of existing technique is also that flexibility degree is very low, needs to prepare mask plate in advance, reduces the efficiency of preparation, also make circuit board cost increase.
Summary of the invention
The object of this invention is to provide the method that the quick high flexibility of a kind of ceramic circuit-board makes, make high accuracy high density ceramic wiring board, the operation solving traditional ceramics circuit board manufacturing process is many, long flow path, low precision, the flexible weak point such as low.
The method that the quick high flexibility of ceramic circuit-board of the present invention makes, comprises following making step:
One, forming ceramic matrix: described ceramic matrix is the chemical composition containing active ion in material composition, interrupts its chemical bond by laser photon energy, chemical reaction generates active material.Ceramic matrix is curing molding by modes such as high temperature/low temperature co-fired, curtain coating and injection mouldings, can do slabbing, bulk etc. various needed for three-dimensional shape structure.Ceramic matrix forms corresponding composite ceramics etc. after comprising the pottery being respectively the high heat dispersions such as highly purified aluminium nitride, aluminium oxide, zirconia, carborundum, titanium oxide, iron oxide and the compound optionally adding active ion.
Two, laser modified ceramic surface, or hole together with at surface laser: Laser Focusing is radiated at ceramic surface, control laser energy density and reach more than ceramic modified threshold value, make ceramic surface generation chemical reaction, open the associative key of the compound of active ion, the corresponding active material such as direct generation metal simple-substance, as chemical plating catalysis source.After laser surface modification; define metal simple-substance isoreactivity material and be attached to surface; there is electric conductivity; but its conductive capability is very weak, then carry out the 3rd stepization plating formation plain conductor and protective layer etc., strengthen its electric conductivity; when the thickness of modified layer increases; its electric conductivity strengthens, then can without the need to carrying out chemical plating, directly as wire.As reduced precipitating metal aluminium in laser modified aluminium nitride and aluminium oxide.By there is chemical reaction, active material and matrix form enhanced primary treatment, improve the adhesion between coating and matrix.For different ceramic materials, according to the chemical bond energy of ceramic material composition, select different lasing light emitters, by controlling the parameter such as Laser output average power, pulse repetition frequency, sweep speed, defocusing amount and trace interval and scanning pass, controlling laser energy and reaching ceramic modified threshold value.
Preferably, while laser drill, also make also modification to occur at the bottom of hole wall and hole.
Lasing light emitter is mainly the lasing light emitter that centre wavelength is 157-1064nm wave band, particularly preferably with centre wavelength be ultraviolet (355 nm, 266 nm, 248nm) or green glow 532nm, pulse duration is ps pulsed laser and ns pulsed laser source and the ultra-short pulse laser source of short wavelength's high-peak powers such as nanosecond, psec, femtosecond.Because Ultra-Violet Laser wavelength is short, photon energy is large, and more easily realize interrupting chemical bond, the energy density threshold needed for modification is less, and preferred ultraviolet band laser carries out ceramic modified.
As above, laser drill can adopt the pulsed laser source of high-output power, high pulse repetition frequency, carries out rapid drilling.Aluminium nitride or aluminium oxide ceramics boring, during as adopted centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, drilling parameter should be: when Laser output average power is 8-10W, pulse repetition frequency 80-150kHz, sweep speed is 30-150mm/s, adopt the mode focused on to carry out hole (now defocusing amount is 0), and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole.While laser drill, also occur laser modified at the bottom of the hole wall of ceramic material and hole.During as adopted centre wavelength ultraviolet 248nm excimer pulsed laser source, drilling parameter should be: when Laser output average power is 10-12W, pulse repetition frequency 60-120kHz, sweep speed is 30-120mm/s, the mode focused on is adopted to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole; During as adopted centre wavelength ultraviolet 266nm picosecond pulse laser source, drilling parameter should be: when Laser output average power is 4-5W, pulse repetition frequency 200-400kHz, sweep speed is 50-100mm/s, the mode focused on is adopted to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole; During as adopted centre wavelength green glow 532nm pulsed laser source, drilling parameter should be: when Laser output average power is 15-20W, pulse repetition frequency 60-100kHz, sweep speed is 80-200mm/s, the mode focused on is adopted to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole.
During laser surface modification, control energy density and reach more than modification threshold value, realize high-frequency high-velocity scanning, accelerated surface modification, chemical reaction produces active material.Aluminium nitride or aluminium oxide ceramics modification, time preferably as employing centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, when Laser output average power is 4-10W, pulse repetition frequency is 50-400kHz, sweep speed is 500-5000mm/s, the mode focused on is adopted to carry out scanning (now defocusing amount is 0), hot spot can reach 20 μm, minimum feature can reach spot size size, large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.01-0.04mm/ bar, also the mode of out of focus can be adopted, different defocusing amount is in conjunction with corresponding trace interval, use and more high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.Aluminium nitride or aluminium oxide ceramics modification, during as adopted centre wavelength ultraviolet 248nm excimer pulsed laser source, when Laser output average power is 6-12W, pulse repetition frequency is 50-200kHz, sweep speed is 400-4000mm/s, adopt the mode focused on to scan, hot spot can reach 50 μm, and minimum feature can reach spot size size; Large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.025-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amount is in conjunction with corresponding trace interval, use and high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, during as adopted centre wavelength ultraviolet 266nm picosecond pulse laser source, when Laser output average power is 2-5W, pulse repetition frequency is 100-1000kHz, sweep speed is 200-3000mm/s, adopt the mode focused on to scan, hot spot can reach 10 μm, and minimum feature can reach spot size size; Large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.005-0.02mm/ bar, also can adopt the mode of out of focus, and different defocusing amount is in conjunction with corresponding trace interval, use and high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, during as adopted centre wavelength green glow 532nm pulsed laser source, when Laser output average power is 12-20W, pulse repetition frequency is 60-300kHz, sweep speed is 300-4500mm/s, adopt the mode focused on to scan, hot spot can reach 25 μm, and minimum feature can reach spot size size; Large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.01-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amount is in conjunction with corresponding trace interval, use and high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.
Three, chemical plating forms metal carbonyl conducting layer: in laser drill and modified ceramic matrix, active particle is produced at generation modification area, active particle can promote copper ion generation reduction reaction in chemical bronze plating liquid, generate copper particle deposition on ceramic matrix, combine closely between atom and wrap active particle surface and be connected to each other the copper coating forming one deck densification, thus form ground floor coating fast in laser-irradiated domain.First coating carries out thickening copper coating, then carries out nickel plating at thickening copper and form protective layer.Adopt similar chemical plating process can carry out copper facing, nickel plating, silver-plated, gold-plated etc., form various metal level.Chemical plating can be carried out forming the single coat of metal by one or many, also can form composite coating by various metal plating process conbined usage.Such as after the laser activation region of ceramic matrix forms copper coating, also on copper coating, proceeding plating can form other coats of metal.Under preferable case, in order to prevent the copper coating on ceramic matrix surface to be oxidized, can proceed one deck chemical nickel plating, form one deck nickel coating on copper coating surface, the metal level on the ceramic matrix surface obtained has Cu-Ni structure from the inside to surface.More preferably, in situation, at Cu-Ni layer on surface of metal by craft of gilding, the metal level on ceramic matrix surface is made to have Cu-Ni-Au structure from the inside to surface.
Advantageous Effects of the present invention:
By laser writing technology, ceramic matrix is holed and surface modification, control laser energy during modification and reach more than the chemical bond generation fracture threshold value of pottery, it is made active materials such as chemical reaction precipitating metal simple substance to occur as chemical plating catalysis source, the active material that reaction generates and matrix are enhanced primary treatment, are conducive to the binding ability improving conducting wire and matrix; Again in conjunction with chemical plating process selectivity depositing metal layers in active region on ceramic matrix, coating and active material are the tight enhanced primary treatment of atom level.Directly high flexibility circuitous pattern is formed fast by laser modified and chemical plating two step, its conducting wire and ceramic matrix are atom level enhanced primary treatment, its adhesion has had than simple physical alligatoring combination and has significantly strengthened, and its heat conductivility and electrical property also promote all to some extent.
Accompanying drawing explanation
Fig. 1 is the schematic diagram with laser modified ceramic surface;
Fig. 2 is unmodified aluminium nitride ceramics surface topography;
Fig. 3 be laser modified by the embodiment of the present invention after aluminium nitride ceramics surface topography;
Fig. 4 is the surface topography map after electroless copper.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated.It is emphasized that following explanation is only exemplary, instead of in order to limit the scope of the invention and apply.
Refer to Fig. 1, in some embodiments, a kind of quick high flexibility manufacture method of ceramic circuit-board comprises the following steps:
1, forming ceramic matrix: described ceramic matrix is containing the chemical composition of active ion in material composition, the curing molding by modes such as high temperature/low temperature co-fired, curtain coating and injection mouldings, makes required geometrical form.Ceramic matrix forms corresponding composite ceramics etc. after comprising the pottery being respectively the high heat dispersions such as highly purified aluminium nitride, aluminium oxide, zirconia, carborundum, titanium oxide, iron oxide and the compound optionally adding active ion.As highly purified aluminium nitride ceramics, 96% aluminium oxide ceramics curtain coating formed plate shape substrates.
2, laser modified ceramic surface and laser drill: different according to material composition, select different lasing light emitter, laser LASER is radiated at ceramic surface, by controlling the parameter such as Laser output average power, pulse repetition frequency, sweep speed, defocusing amount and trace interval and scanning pass, control laser energy and reach more than modification threshold value, make ceramic surface generation chemical reaction, directly generate the corresponding active materials such as metal simple-substance, as chemical plating catalysis source.The metal level that chemical reaction generates has electric conductivity.The prioritizing selection type of focusing is carried out, and focus energy density is high, more easily reaches modification threshold value.Lasing light emitter is mainly the lasing light emitter that centre wavelength is 157-1064nm wave band, preferably with centre wavelength be ultraviolet (355 nm, 266 nm, 248nm) or green glow 532nm, pulse duration is ps pulsed laser and ns pulsed laser source and the ultra-short pulse laser source of short wavelength's high-peak powers such as nanosecond, psec, femtosecond.
Laser drill can adopt the pulsed laser source of high-output power, high pulse repetition frequency, carries out rapid drilling.Aluminium nitride or aluminium oxide ceramics boring, during as adopted centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, drilling parameter should be: when Laser output average power is 8-10W, pulse repetition frequency 80-150kHz, sweep speed is 30-150mm/s, adopt the mode focused on to carry out hole (now defocusing amount is 0), and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole.While laser drill, also occur laser modified at the bottom of the hole wall of ceramic material and hole.During as adopted centre wavelength ultraviolet 248nm excimer pulsed laser source, drilling parameter should be: when Laser output average power is 10-12W, pulse repetition frequency 60-120kHz, sweep speed is 30-120mm/s, the mode focused on is adopted to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole; During as adopted centre wavelength ultraviolet 266nm picosecond pulse laser source, drilling parameter should be: when Laser output average power is 4-5W, pulse repetition frequency 200-400kHz, sweep speed is 50-100mm/s, the mode focused on is adopted to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole; During as adopted centre wavelength green glow 532nm pulsed laser source, drilling parameter should be: when Laser output average power is 15-20W, pulse repetition frequency 60-100kHz, sweep speed is 80-200mm/s, the mode focused on is adopted to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole.
During laser surface modification, control energy density and reach more than modification threshold value, realize high-frequency high-velocity scanning, accelerated surface modification, chemical reaction produces active material.Aluminium nitride or aluminium oxide ceramics modification, time preferably as employing centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, when Laser output average power is 4-10W, pulse repetition frequency is 50-400kHz, sweep speed is 500-5000mm/s, adopt the mode focused on to carry out scanning (now defocusing amount is 0), hot spot can reach 20 μm, and minimum feature can reach spot size size; Large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.01-0.04mm/ bar, also can adopt the mode of out of focus, and different defocusing amount is in conjunction with corresponding trace interval, use and more high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.Aluminium nitride or aluminium oxide ceramics modification, during as adopted centre wavelength ultraviolet 248nm excimer pulsed laser source, when Laser output average power is 6-12W, pulse repetition frequency is 50-200kHz, sweep speed is 400-4000mm/s, adopt the mode focused on to scan, hot spot can reach 50 μm, and minimum feature can reach spot size size; Large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.025-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amount is in conjunction with corresponding trace interval, use and high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, during as adopted centre wavelength ultraviolet 266nm picosecond pulse laser source, when Laser output average power is 2-5W, pulse repetition frequency is 100-1000kHz, sweep speed is 200-3000mm/s, adopt the mode focused on to scan, hot spot can reach 10 μm, and minimum feature can reach spot size size; Large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.005-0.02mm/ bar, also can adopt the mode of out of focus, and different defocusing amount is in conjunction with corresponding trace interval, use and high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, during as adopted centre wavelength green glow 532nm pulsed laser source, when Laser output average power is 12-20W, pulse repetition frequency is 60-300kHz, sweep speed is 300-4500mm/s, adopt the mode focused on to scan, hot spot can reach 25 μm, and minimum feature can reach spot size size; Large live width large regions adopts line dense arrangement scan mode to carry out, trace interval is 0.01-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amount is in conjunction with corresponding trace interval, use and high-powerly carry out the quick modification of large regions, scanning pass is 1-10 time.
3, chemical plating forms metal level: be positioned over plating in chemical plating fluid by through laser drill and modified ceramic matrix, carries out copper facing, nickel plating, silver-plated, gold-plated etc., form various metal level at generation modification area.By relevant parameters such as adjustmentization plating liquor component ratio and temperature, make coating even compact.The coat of metal can be single coating, also can form composite deposite by various metals coating, as formed Cu-Ni layer or Cu-Ni-Au layer on ceramic matrix surface.Chemical deposit is in the metal level of Cu-Ni or Cu-Ni-Au structure, and Cu layer thickness is 0.1-50 μm, is preferably 4-20 μm; Ni layer thickness is 0.1-50 μm, is preferably 2-8 μm; The thickness of Au layer is 0.01-10 μm, is preferably 0.01-2 μm.Wherein, the highly active various plating solution in the equal employing plating field of the chemical bronze plating liquid adopted, chemical nickel-plating liquid and gold plating liquid.The copper plating bath composition of such as described chemical bronze plating liquid is: CuSO45H2O 16g/L, EDTA2Na 21g/L, sodium potassium tartrate tetrahydrate 16g/L, formaldehyde 5.0g/L, potassium ferrocyanide 70mg/L, α, α ' bipyridine 8mg/L, PEG-1000 1g/L, temperature 40-50 DEG C, pH value 12-13; Chemical nickel plating also can adopt nickel-plating liquid of the prior art, and such as it consists of: nickelous sulfate 28g/L, sodium hypophosphite 24g/L, sodium acetate 17g/L, malic acid 2g/L, temperature 82-88 DEG C, and pH value is 4.4-4.8.
Example one
1) ceramic material adopts 99% highly purified aluminium nitride ceramics, is made into ceramic substrate through the tape casting, and thickness is 0.1-2mm, and surface roughness Ra is 0.3-0.5 μm, and after polishing, roughness can reach 0.03 μm.
2) adopt ultraviolet 355nm ps pulsed laser and ns pulsed laser to highly purified aluminium nitride ceramics boring and modification.Lasing light emitter adopts ultraviolet 355nm ps pulsed laser and ns pulsed laser, and it is 10W that maximum laser exports average power, and pulse duration is 1-10ns, and pulse repetition frequency is 1-400kHz.
The preferred high power of laser drill, high pulse repetition frequency, high sweep speed is carried out, and as adopted Laser output average power 10W, pulse repetition frequency is 100kHz, and sweep speed is 100mm/s, realizes rapid drilling, and hole wall also realizes laser modified simultaneously.
During laser surface modification, control energy density more than aluminium nitride ceramics modification threshold value.When Laser output average power is 7.2W, pulse repetition frequency is 150kHz, and sweep speed is 1500mm/s, and scanning pass is 1 time.Adopt the mode focused on to scan, hot spot can reach 20 μm, and minimum feature can reach 1mil.Large live width large regions adopts line dense arrangement scan mode to carry out, also the mode of out of focus can be adopted, different defocusing amount is in conjunction with corresponding trace interval, the more high-power corresponding laser parameter of fast activating that carries out is used to change, control laser energy more than modification threshold value, realize chemical modification.
After laser surface modification, directly produce metallic aluminium at ceramic surface generation chemical reaction, there is electric conductivity, due to its very thin thickness, its resistance is very large, and electric conductivity is weak, therefore adopt chemical plating to take metallic aluminium as catalysis source, form the plain conductor of satisfactory electrical conductivity further.
3) ceramic substrate after laser modified to be immersed in chemical bronze plating liquid 3 hours, the copper coating after forming 12 μm, then immerse 10min in chemical nickel liquid, form the nickel dam of 3 μm.Wherein, chemical copper liquid: CuSO45H2O 18g/L, EDTA2Na 22g/L, sodium potassium tartrate tetrahydrate 15g/L, formaldehyde 5.0g/L, potassium ferrocyanide 60mg/L, α ' bipyridine 8mg/L, PEG-1000 1g/L, plating temperature is 47 DEG C, and pH value is 12.7; Chemical nickel-plating liquid: nickelous sulfate 26g/L, sodium hypophosphite 23g/L, sodium acetate 16g/L, malic acid 2g/L, plating temperature is 84 DEG C, and pH value is 4.5; Fine and close Cu-Ni coating is defined at modification area.
By above step, realize quick high flexibility on aluminium nitride ceramic substrate and make double-sided wiring board, minimum feature can reach 1mil.
Example two
1) ceramic material is 96% aluminium oxide ceramics, is made into 3 D stereo ceramic matrix through casting, and surface roughness Ra is 0.3-0.5 μm.
2) centre wavelength is adopted to be that 266nm picosecond pulse laser is holed and surface modification to aluminium oxide ceramics.Lasing light emitter adopts centre wavelength to be 266nm picosecond pulse laser, and Laser output average power is 5W to the maximum, and pulse duration is 1-10ps, and pulse repetition frequency is 100kHz-1MHz.
Laser drill is, when Laser output average power is 5W, and pulse repetition frequency 1MHz, sweep speed is 50mm/s, adopt the mode focused on to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole.Picosecond laser is ultra-short pulse laser, and pulsewidth is short, and peak energy is high, has very large advantage in boring, and the profile in hole is fine, and tapering is controlled.Equally, hole wall also there occurs modification when holing.
During laser surface modification, control energy density more than aluminium oxide ceramics modification threshold value.When Laser output average power is 4W, pulse repetition frequency is 800Hz, sweep speed is 600mm/s, scanning pass is 1 time, and adopt the mode focused on to scan, hot spot can reach 10 μm, minimum feature can reach 15 μm, large live width large regions scope adopts line dense arrangement scan mode to carry out, and also can adopt the mode of out of focus, different defocusing amount is in conjunction with corresponding trace interval.
After laser surface modification, separate out metallic aluminium at ceramic surface, defined conductive layer, be provided with electric conductivity, but its poorly conductive, therefore adopt chemical plating to be that catalysis source forms satisfactory electrical conductivity plain conductor further with metallic aluminium.
3) to immerse in chemical bronze plating liquid 3 hours, the copper coating after forming 12 μm, then immerse 10min in chemical nickel liquid, form the nickel dam of 3 μm.Wherein, chemical copper liquid: CuSO45H2O 1g/L, EDTA2Na 21g/L, sodium potassium tartrate tetrahydrate 16g/L, formaldehyde 5.0g/L, potassium ferrocyanide 70mg/L, α ' bipyridine 8mg/L, PEG-1000 1g/L, plating temperature is 45 DEG C, pH value 12.5; Chemical nickel-plating liquid: nickelous sulfate 28g/L, sodium hypophosphite 24g/L, sodium acetate 17g/L, malic acid 2g/L, plating temperature is 86 DEG C, and pH value is 4.7.Fine and close Cu-Ni coating is defined at modification area.
By above step, realize quick high flexibility on alumina ceramic substrate and make double-sided wiring board, minimum feature reaches 15 μm.
Consult the effect of example shown in Fig. 2-Fig. 4, by laser surface modification pottery, make metal conducting layer and matrix form enhanced primary treatment, greatly improve the adhesion of wiring board, its heat conductivility and electrical property also promote all to some extent.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, some simple deduction or replace can also be made, all should be considered as belonging to protection scope of the present invention.
Claims (5)
1. a method for the quick high flexibility making of ceramic circuit-board, is characterized in that, comprise the following steps:
Forming ceramic matrix, described ceramic matrix is the chemical composition containing active ion in material composition;
Laser is radiated at ceramic matrix surface, control laser energy density and reach more than the chemical bond generation fracture threshold value of the compound of active ion, make ceramic matrix surface that chemical reaction occur and separate out active material as chemical plating catalysis source, the active material that reaction generates and matrix are enhanced primary treatment, wherein, for different ceramic materials, according to the chemical bond energy of ceramic material composition, select different lasing light emitter, by controlling Laser output average power, pulse repetition frequency, sweep speed, defocusing amount and trace interval and scanning pass, control laser energy and reach ceramic modified threshold value,
Ceramic matrix after laser modified is positioned over plating in chemical plating fluid, forms the coat of metal;
Wherein adopt the one in following parameter combinations, control the modifying surface of laser to aluminium nitride or aluminium oxide ceramics:
When adopting centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, when Laser output average power is 4-10W, pulse repetition frequency is 50-400kHz, and sweep speed is 500-5000mm/s; The mode focused on is adopted to scan, hot spot is low to moderate 20 μm, minimum feature is low to moderate spot size size, scanning pass is 1-10 time, trace interval is 0.01-0.04mm/ bar, or adopting the mode of out of focus to scan, different defocusing amount carries out the quick modification in region in conjunction with corresponding trace interval, and scanning pass is 1-10 time;
When adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, when Laser output average power is 6-12W, pulse repetition frequency is 50-200kHz, and sweep speed is 400-4000mm/s; The mode focused on is adopted to scan, hot spot is low to moderate 50 μm, minimum feature is low to moderate spot size size, scanning pass is 1-10 time, trace interval is 0.025-0.10mm/ bar, or adopting the mode of out of focus to scan, different defocusing amount carries out the quick modification in region in conjunction with corresponding trace interval, and scanning pass is 1-10 time;
When adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, when Laser output average power is 2-5W, pulse repetition frequency is 100-1000kHz, and sweep speed is 200-3000mm/s; The mode focused on is adopted to scan, hot spot is low to moderate 10 μm, minimum feature is low to moderate spot size size, scanning pass is 1-10 time, trace interval is 0.005-0.02mm/ bar, or adopting the mode of out of focus to scan, different defocusing amount carries out the quick modification in region in conjunction with corresponding trace interval, and scanning pass is 1-10 time;
When adopting centre wavelength green glow 532nm pulsed laser source, when Laser output average power is 12-20W, pulse repetition frequency is 60-300kHz, and sweep speed is 300-4500mm/s; The mode focused on is adopted to scan, hot spot is low to moderate 25 μm, minimum feature is low to moderate spot size size, scanning pass is 1-10 time, trace interval is 0.01-0.10mm/ bar, or adopting the mode of out of focus to scan, different defocusing amount carries out the quick modification in region in conjunction with corresponding trace interval, and scanning pass is 1-10 time.
2. the method for claim 1, it is characterized in that, comprise with described laser while boring is implemented to ceramic matrix, also modification is there occurs at the bottom of the hole wall in bored hole and hole, separate out active material as chemical plating catalysis source, the active material that reaction generates and matrix are enhanced primary treatment.
3. method as claimed in claim 1 or 2, is characterized in that, adopts lasing light emitter to comprise the lasing light emitter that centre wavelength is 157-1064nm wave band.
4. method as claimed in claim 1 or 2, is characterized in that, nanosecond of wavelength green glow 532nm centered by described lasing light emitter, ultraviolet 355nm, ultraviolet 266nm or ultraviolet 248nm short wavelength, psec or femtosecond pulse source.
5. method as claimed in claim 2, it is characterized in that, to aluminium nitride or aluminium oxide ceramics laser drill with carry out modification to hole wall, the mode focused on is adopted to hole, and focal height declines along with drilling depth, multipass, until drill or reach the degree of depth needed for blind hole, process conditions are as follows:
When adopting centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, drilling parameter is: Laser output average power is 8-10W, and pulse repetition frequency is 80-150kHz, and sweep speed is 30-150mm/s, or
When adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, drilling parameter is: Laser output average power is 10-12W, and pulse repetition frequency is 60-120kHz, and sweep speed is 30-120mm/s, or
When adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, drilling parameter is: Laser output average power is 4-5W, and pulse repetition frequency is 200-400kHz, and sweep speed is 50-100mm/s, or
When adopting centre wavelength green glow 532nm pulsed laser source, drilling parameter is: when Laser output average power is 15-20W, and pulse repetition frequency is 60-100kHz, and sweep speed is 80-200mm/s.
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