CN103188877A - Quick high-flexibility manufacturing method for ceramic circuit board - Google Patents
Quick high-flexibility manufacturing method for ceramic circuit board Download PDFInfo
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Abstract
A quick high-flexibility manufacturing method for a ceramic circuit board comprises the following steps: irradiating laser on the surface of a ceramic matrix, and controlling the energy density of the laser to reach above the fracture threshold of the chemical bond of the compound containing active ions, so that chemical reaction occurs on the surface of the ceramic matrix, an active substance is separated out to serve as a chemical plating catalytic source, and the active substrate generated by the reaction and the matrix form chemical metallurgical bonding, wherein different laser sources are selected aiming at different ceramic materials according to the chemical bond energy of the ceramic material components, and the laser energy is controlled to reach the ceramic modified threshold by controlling the average power of laser output, pulse repetition frequency, scanning speed, defocusing amount, space between scanning line and scanning times; and the ceramic matrix modified by the laser is placed into a chemical plating solution to perform plating to form a metal coating. The surface of the ceramic is modified by the laser, so that a metal conductive layer and the matrix form chemical metallurgical bonding, the bonding force of the circuit board is greatly increased, and the heat-conducting property and the electric property are improved.
Description
Technical field
The present invention relates to wiring board and make the field, relate in particular to the method that the quick high flexibility of a kind of ceramic wiring board is made.
Background technology
Along with electronic technology to integrated, the microminiaturized fast development of height, lead and the electronic devices and components of wiring board are more and more intensive, its heat dissipation problem is more and more outstanding.Ceramic material has high-termal conductivity, and good electrical property be ideal heat radiation and the encapsulating material of large scale integrated circuit of new generation, semiconductor module circuit and high power device, thereby ceramic wiring board obtains extensive concern and develops rapidly.Compare with traditional printed wiring board, the pottery wiring board obviously has many advantages: good thermal conductivity, resistance to chemical attack, superior electrical property such as the big and dielectric loss of insulation resistance is little, excellent high frequency, the mechanical strength that is suitable for is widely used in high density and mixes in the products such as circuit, microwave power device, semiconductor power device, power electronic device, optoelectronic component, semiconductor refrigerating, has bright development prospect.
The main production method of present ceramic wiring board still is the traditional chemical etching process, at first ceramic substrate forms ceramic copper-clad plate by modes such as Copper Foil high temperature Direct Bonding, vacuum splashing and plating, vacuum pressing-combinings in inert gas, then ceramic copper-clad plate is carried out the circuit moulding, to draw plate, numerically controlled data collection and digital control hole drilling, cleaning, oven dry, hole metallization through data preparation, light, pad pasting, exposure, development, etching, tin-lead alloy plating, move back film, corrosion ... etc. a plurality of flow processs.
For example: CN 102170755A discloses the production technology of ceramic mobile phone wiring board, its multilayer circuit board complex manufacturing technology, and operation is many, pottery boring, oil removing, microetch, pickling, washing, oven dry, electroplating ventilating hole, overlay film, exposure is developed, and a plurality of flow processs such as film are taken off in etching.Utility model CN 202127547 U disclose the profile of ceramic interconnect high-density circuit board, do not provide concrete technology manufacture method.
CN201210198793.3 discloses a kind of preparation method of ceramic circuit board, adopt laser engraving, the effect that produces is mainly the ceramic matrix alligatoring, increases the collective ability of metal level and matrix, and mentions and make the ceramic matrix surface produce the certain physics chemical variation.Which type of chemical change the not open ceramic matrix surface that specifically should make of the document produces, and does not also disclose means and the condition that realizes producing chemical change.
Existing line plate manufacture craft more and more can not satisfy the demand for development of circuit board, is embodied in that manufacturing process is many, speed is slow, precision is low, error is big, energy consumption is big, waste is big, environmental pollution is serious etc.In addition, the greatest weakness of existing technology is that also the flexibility degree is very low, needs the prepared beforehand mask plate, has reduced the efficient of preparation, and the circuit board cost is risen.
Summary of the invention
The purpose of this invention is to provide the method that the quick high flexibility of a kind of ceramic wiring board is made, make high accuracy high density ceramic wiring board, weak point such as the operation that solves traditional ceramics wiring board manufacture craft is many, long flow path, low precision, flexibility are low.
The method that the quick high flexibility of ceramic wiring board of the present invention is made comprises following making step:
One, forming ceramic matrix: described ceramic matrix is the compound composition that contains active ion in the material composition, can interrupt its chemical bond by the laser photon energy, and chemical reaction generates active material.Curing molding can be done various required three-dimensional shape structures such as slabbing, bulk to ceramic matrix by mode such as high temperature/low temperature co-fired, curtain coating and injection moulding.Ceramic matrix forms corresponding composite ceramics etc. after comprising the pottery of high heat dispersions such as being respectively highly purified aluminium nitride, aluminium oxide, zirconia, carborundum, titanium oxide, iron oxide and optionally adding the compound of active ion.
Two, laser modified ceramic surface, or together with holing at surface laser: laser focuses on and is radiated at ceramic surface, the control laser energy density reaches more than the ceramic modified threshold value, make ceramic surface generation chemical reaction, open the associative key of the compound of active ion, directly generate corresponding active materials such as metal simple-substance, as chemical plating catalysis source.Through behind the laser surface modification; form metal simple-substance isoreactivity material and be attached to the surface; had electric conductivity; but its conductive capability is very weak, carries out the 3rd stepization plating again and forms plain conductor and protective layer etc., strengthens its electric conductivity; thickness increase when modified layer; its electric conductivity strengthens, and then can need not to carry out chemical plating, directly as lead.As reduction precipitating metal aluminium in laser modified aluminium nitride and aluminium oxide.By chemical reaction takes place, active material forms chemical metallurgy with matrix and is combined, and improves the adhesion between coating and matrix.At different ceramic materials, chemical bond energy according to the ceramic material composition, select different lasing light emitters, by control laser output average power, pulse repetition frequency, sweep speed, defocusing amount and parameters such as trace interval and scanning pass, the control laser energy reaches ceramic modified threshold value.
Preferably, in laser drill, modification also takes place at the bottom of also making hole wall and blind hole hole.
Lasing light emitter is mainly the lasing light emitter that centre wavelength is the 157-1064nm wave band, is that ultraviolet (355 nm, 266 nm, 248nm) or green glow 532nm, pulse duration are ps pulsed laser and ns pulsed laser source and the ultra-short pulse laser source of short wavelength's high-peak powers such as nanosecond, psec, femtosecond with centre wavelength especially preferably.Because the Ultra-Violet Laser wavelength is short, photon energy is big, and easier realization interrupts chemical bond, and the required energy density threshold of modification is littler, and preferred ultraviolet band laser carries out ceramic modified.
As above, laser drill can adopt the pulsed laser source of high-output power, high pulse repetition frequency, carries out rapid drilling.Aluminium nitride or aluminium oxide ceramics boring, as when adopting centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, drilling parameter should be: when laser output average power is 8-10W, pulse repetition frequency 80-150kHz, sweep speed is 30-150mm/s, adopt the mode that focuses on to hole (this moment, defocusing amount was 0), and focal height descends along with drilling depth, multipass is up to drilling or reaching the required degree of depth of blind hole.In laser drill, also take place laser modified at the bottom of the hole wall of ceramic material and the blind hole hole.As when adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, drilling parameter should be: when laser output average power is 10-12W, pulse repetition frequency 60-120kHz, sweep speed is 30-120mm/s, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, and multipass is up to drilling or reaching the required degree of depth of blind hole; As when adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, drilling parameter should be: when laser output average power is 4-5W, pulse repetition frequency 200-400kHz, sweep speed is 50-100mm/s, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, and multipass is up to drilling or reaching the required degree of depth of blind hole; As when adopting centre wavelength green glow 532nm pulsed laser source, drilling parameter should be: when laser output average power is 15-20W, pulse repetition frequency 60-100kHz, sweep speed is 80-200mm/s, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, and multipass is up to drilling or reaching the required degree of depth of blind hole.
During laser surface modification, the control energy density reaches more than the modification threshold value, realizes the high-frequency high-velocity scanning, the accelerated surface modification, and chemical reaction is produced active material.Aluminium nitride or aluminium oxide ceramics modification, during preferably as employing centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, when laser output average power is 4-10W, pulse repetition frequency is 50-400kHz, sweep speed is 500-5000mm/s, adopt the mode that focuses on to scan (this moment, defocusing amount was 0), hot spot can reach 20 μ m, minimum feature can reach the spot size size, and the big zone of big live width adopts line dense arrangement scan mode to carry out, and trace interval is the 0.01-0.04mm/ bar, also can adopt the mode of out of focus, different defocusing amounts are used the more high-power big zone modification fast of carrying out in conjunction with corresponding trace interval, and the scanning pass is 1-10 time.Aluminium nitride or aluminium oxide ceramics modification, as when adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, when laser output average power is 6-12W, pulse repetition frequency is 50-200kHz, sweep speed is 400-4000mm/s, adopt the mode that focuses on to scan, hot spot can reach 50 μ m, and minimum feature can reach the spot size size; The big zone of big live width adopts line dense arrangement scan mode to carry out, trace interval is the 0.025-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval, use the high-power big zone modification fast of carrying out, the scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, as when adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, when laser output average power is 2-5W, pulse repetition frequency is 100-1000kHz, sweep speed is 200-3000mm/s, adopt the mode that focuses on to scan, hot spot can reach 10 μ m, and minimum feature can reach the spot size size; The big zone of big live width adopts line dense arrangement scan mode to carry out, trace interval is the 0.005-0.02mm/ bar, also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval, use the high-power big zone modification fast of carrying out, the scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, as when adopting centre wavelength green glow 532nm pulsed laser source, when laser output average power is 12-20W, pulse repetition frequency is 60-300kHz, sweep speed is 300-4500mm/s, adopt the mode that focuses on to scan, hot spot can reach 25 μ m, and minimum feature can reach the spot size size; The big zone of big live width adopts line dense arrangement scan mode to carry out, trace interval is the 0.01-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval, use the high-power big zone modification fast of carrying out, the scanning pass is 1-10 time.
Three, chemical plating forms metal carbonyl conducting layer: on the ceramic matrix after laser drill and the modification, modification area generation active particle is taking place, active particle can promote copper ion generation reduction reaction in the chemical bronze plating liquid, generate the copper particle deposition on ceramic matrix, combining closely between atom wraps the active particle surface and is connected to each other the copper coating that forms one deck densification, thereby forms ground floor coating fast in the laser irradiation area territory.Thicken copper coating at first coating, carry out nickel plating at thickening copper then and form protective layer.Adopt similar chemical plating process can carry out copper facing, nickel plating, silver-plated, gold-plated etc., form various metal levels.Chemical plating can form the single coat of metal by one or many, also can use the formation composite coating by various metal-plated process integrations.For example after the laser activation zone of ceramic matrix forms copper coating, also can form other coats of metal in the plating of proceeding of copper coating.Under the preferable case, in order to prevent the copper coating oxidation on ceramic matrix surface, can proceed one deck chemical nickel plating, form one deck nickel coating on the copper coating surface, the metal level on the ceramic matrix surface that obtains has the Cu-Ni structure from the inside to surface.More preferably under the situation, by craft of gilding, make the metal level on ceramic matrix surface have the Cu-Ni-Au structure from the inside to surface at the Cu-Ni layer on surface of metal.
Useful technique effect of the present invention:
By the laser direct-writing technology ceramic matrix is holed and surface modification, the control laser energy reaches more than the chemical bond generation fracture threshold value of pottery during modification, make it composite reactive material such as chemical reaction precipitating metal simple substance take place as chemical plating catalysis source, the active material that reaction generates is that chemical metallurgy is combined with matrix, is conducive to improve the binding ability of conducting wire and matrix; In conjunction with chemical plating process selectivity depositing metal layers in active region on ceramic matrix, coating and active material are the tight chemical metallurgical binding of atom level again.Form circuitous pattern by laser modified and two steps of chemical plating directly quick high flexibility ground, be combined for the atom level chemical metallurgy with ceramic matrix in its conducting wire, its adhesion has had significantly enhancing than simple physical alligatoring combination, and its heat conductivility and electrical property also all promote to some extent.
Description of drawings
Fig. 1 is the schematic diagram with laser modified ceramic surface;
Fig. 2 is unmodified aluminium nitride ceramics surface topography;
Fig. 3 is the aluminium nitride ceramics surface topography after laser modified by the embodiment of the invention;
Fig. 4 is the surface topography map behind the electroless copper.
Embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated.Should be emphasized that following explanation only is exemplary, rather than in order to limit the scope of the invention and to use.
See also Fig. 1, in some embodiments, a kind of quick high flexibility manufacture method of ceramic wiring board may further comprise the steps:
1, forming ceramic matrix: described ceramic matrix is the compound composition that contains active ion in the material composition, by modes such as high temperature/low temperature co-fired, curtain coating and injection mouldings and curing molding is made required geometrical form.Ceramic matrix forms corresponding composite ceramics etc. after comprising the pottery of high heat dispersions such as being respectively highly purified aluminium nitride, aluminium oxide, zirconia, carborundum, titanium oxide, iron oxide and optionally adding the compound of active ion.Form plate shape substrates as highly purified aluminium nitride ceramics, 96% aluminium oxide ceramics curtain coating.
2, laser modified ceramic surface and laser drill: different according to material composition, select different lasing light emitters, laser LASER is radiated at ceramic surface, by control laser output average power, pulse repetition frequency, sweep speed, defocusing amount and parameters such as trace interval and scanning pass, the control laser energy reaches more than the modification threshold value, make ceramic surface generation chemical reaction, directly generate corresponding active materials such as metal simple-substance, as chemical plating catalysis source.The metal level that chemical reaction generates has had electric conductivity.Preferential selective focus mode is carried out focus energy density height, the easier modification threshold value that reaches.Lasing light emitter is mainly the lasing light emitter that centre wavelength is the 157-1064nm wave band, is that ultraviolet (355 nm, 266 nm, 248nm) or green glow 532nm, pulse duration are ps pulsed laser and ns pulsed laser source and the ultra-short pulse laser source of short wavelength's high-peak powers such as nanosecond, psec, femtosecond with centre wavelength preferably.
Laser drill can adopt the pulsed laser source of high-output power, high pulse repetition frequency, carries out rapid drilling.Aluminium nitride or aluminium oxide ceramics boring, as when adopting centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, drilling parameter should be: when laser output average power is 8-10W, pulse repetition frequency 80-150kHz, sweep speed is 30-150mm/s, adopt the mode that focuses on to hole (this moment, defocusing amount was 0), and focal height descends along with drilling depth, multipass is up to drilling or reaching the required degree of depth of blind hole.In laser drill, also take place laser modified at the bottom of the hole wall of ceramic material and the blind hole hole.As when adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, drilling parameter should be: when laser output average power is 10-12W, pulse repetition frequency 60-120kHz, sweep speed is 30-120mm/s, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, and multipass is up to drilling or reaching the required degree of depth of blind hole; As when adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, drilling parameter should be: when laser output average power is 4-5W, pulse repetition frequency 200-400kHz, sweep speed is 50-100mm/s, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, and multipass is up to drilling or reaching the required degree of depth of blind hole; As when adopting centre wavelength green glow 532nm pulsed laser source, drilling parameter should be: when laser output average power is 15-20W, pulse repetition frequency 60-100kHz, sweep speed is 80-200mm/s, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, and multipass is up to drilling or reaching the required degree of depth of blind hole.
During laser surface modification, the control energy density reaches more than the modification threshold value, realizes the high-frequency high-velocity scanning, the accelerated surface modification, and chemical reaction is produced active material.Aluminium nitride or aluminium oxide ceramics modification, during preferably as employing centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, when laser output average power is 4-10W, pulse repetition frequency is 50-400kHz, sweep speed is 500-5000mm/s, adopt the mode that focuses on to scan (this moment, defocusing amount was 0), hot spot can reach 20 μ m, and minimum feature can reach the spot size size; The big zone of big live width adopts line dense arrangement scan mode to carry out, trace interval is the 0.01-0.04mm/ bar, also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval, use the more high-power big zone modification fast of carrying out, the scanning pass is 1-10 time.Aluminium nitride or aluminium oxide ceramics modification, as when adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, when laser output average power is 6-12W, pulse repetition frequency is 50-200kHz, sweep speed is 400-4000mm/s, adopt the mode that focuses on to scan, hot spot can reach 50 μ m, and minimum feature can reach the spot size size; The big zone of big live width adopts line dense arrangement scan mode to carry out, trace interval is the 0.025-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval, use the high-power big zone modification fast of carrying out, the scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, as when adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, when laser output average power is 2-5W, pulse repetition frequency is 100-1000kHz, sweep speed is 200-3000mm/s, adopt the mode that focuses on to scan, hot spot can reach 10 μ m, and minimum feature can reach the spot size size; The big zone of big live width adopts line dense arrangement scan mode to carry out, trace interval is the 0.005-0.02mm/ bar, also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval, use the high-power big zone modification fast of carrying out, the scanning pass is 1-10 time.Aluminium oxide or aluminium nitride ceramics modification, as when adopting centre wavelength green glow 532nm pulsed laser source, when laser output average power is 12-20W, pulse repetition frequency is 60-300kHz, sweep speed is 300-4500mm/s, adopt the mode that focuses on to scan, hot spot can reach 25 μ m, and minimum feature can reach the spot size size; The big zone of big live width adopts line dense arrangement scan mode to carry out, trace interval is the 0.01-0.10mm/ bar, also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval, use the high-power big zone modification fast of carrying out, the scanning pass is 1-10 time.
3, chemical plating forms metal level: will be positioned over plating in the chemical plating fluid through the ceramic matrix after laser drill and the modification, and carry out copper facing, nickel plating, silver-plated, gold-plated etc. at the generation modification area, and form various metal levels.By relevant parameters such as adjustmentization plating liquor component ratio and temperature, make the coating even compact.The coat of metal can be single coating, also can form composite deposite by the multiple coat of metal, as forming Cu-Ni layer or Cu-Ni-Au layer on the ceramic matrix surface.Chemical deposit is in the metal level of Cu-Ni or Cu-Ni-Au structure, and the Cu layer thickness is 0.1-50 μ m, is preferably 4-20 μ m; The Ni layer thickness is 0.1-50 μ m, is preferably 2-8 μ m; The thickness of Au layer is 0.01-10 μ m, is preferably 0.01-2 μ m.Wherein, the chemical bronze plating liquid that adopts, chemical nickel-plating liquid and gold plating liquid be the highly active various plating baths in employing plating field all.For example the copper plating bath composition of described chemical bronze plating liquid is: CuSO45H2O 16g/L, EDTA2Na 21g/L, sodium potassium tartrate tetrahydrate 16g/L, formaldehyde 5.0g/L, potassium ferrocyanide 70mg/L, α, α ' bipyridine 8mg/L, PEG-1000 1g/L, temperature 40-50 ℃, pH value 12-13; Chemical nickel plating also can adopt nickel-plating liquid of the prior art, and for example it consists of: nickelous sulfate 28g/L, and sodium hypophosphite 24g/L, sodium acetate 17g/L, malic acid 2g/L, temperature 82-88 ℃, the pH value is 4.4-4.8.
Example one
1) ceramic material adopts 99% highly purified aluminium nitride ceramics, is made into ceramic substrate through The tape casting, and thickness is 0.1-2mm, and surface roughness Ra is 0.3-0.5 μ m, can reach 0.03 μ m through polishing back roughness.
2) adopt ultraviolet 355nm ps pulsed laser and ns pulsed laser to highly purified aluminium nitride ceramics boring and modification.Lasing light emitter adopts ultraviolet 355nm ps pulsed laser and ns pulsed laser, and maximum laser output average power is 10W, and pulse duration is 1-10ns, and pulse repetition frequency is 1-400kHz.
The preferred high power of laser drill, high pulse repetition frequency, high sweep speed is carried out, and as adopting laser output average power 10W, pulse repetition frequency is 100kHz, and sweep speed is 100mm/s, realizes rapid drilling, and hole wall is also realized laser modified simultaneously.
During laser surface modification, the control energy density is more than aluminium nitride ceramics modification threshold value.When laser output average power was 7.2W, pulse repetition frequency was 150kHz, and sweep speed is 1500mm/s, and the scanning pass is 1 time.Adopt the mode that focuses on to scan, hot spot can reach 20 μ m, and minimum feature can reach 1mil.The big zone of big live width adopts line dense arrangement scan mode to carry out, also can adopt the mode of out of focus, different defocusing amounts are in conjunction with corresponding trace interval, use the more high-power corresponding laser parameter of fast activating that carries out to change, the control laser energy is realized chemical modification more than the modification threshold value.
Behind laser surface modification, directly produce metallic aluminium at ceramic surface generation chemical reaction, had electric conductivity, because its very thin thickness, its resistance is very big, a little less than the electric conductivity, so adopting chemical plating is the catalysis source with the metallic aluminium, further forms the plain conductor of satisfactory electrical conductivity.
3) ceramic substrate after laser modified was immersed in the chemical bronze plating liquid 3 hours, form the copper coating behind the 12 μ m, immerse 10min in the chemical nickel liquid again, form the nickel dam of 3 μ m.Wherein, chemical copper liquid: CuSO45H2O 18g/L, EDTA2Na 22g/L, sodium potassium tartrate tetrahydrate 15g/L, formaldehyde 5.0g/L, potassium ferrocyanide 60mg/L, α ' bipyridine 8mg/L, PEG-1000 1g/L, plating temperature are 47 ℃, the pH value is 12.7; Chemical nickel-plating liquid: nickelous sulfate 26g/L, sodium hypophosphite 23g/L, sodium acetate 16g/L, malic acid 2g/L, plating temperature are 84 ℃, the pH value is 4.5; Formed fine and close Cu-Ni coating at modification area.
By above step, be implemented in quick high flexibility making double-sided wiring board on the aluminium nitride ceramic substrate, minimum feature can reach 1mil.
Example two
1) ceramic material is 96% aluminium oxide ceramics, is made into the 3 D stereo ceramic matrix through casting, and surface roughness Ra is 0.3-0.5 μ m.
2) adopting centre wavelength is that the 266nm picosecond pulse laser is holed and surface modification to aluminium oxide ceramics.It is the 266nm picosecond pulse laser that lasing light emitter adopts centre wavelength, and laser output average power is 5W to the maximum, and pulse duration is 1-10ps, and pulse repetition frequency is 100kHz-1MHz.
Laser drill is, when laser output average power is 5W, and pulse repetition frequency 1MHz, sweep speed is 50mm/s, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, multipass is up to drilling or reaching the required degree of depth of blind hole.Picosecond laser is ultra-short pulse laser, and pulsewidth is short, and the peak energy height has very big advantage aspect boring, and the profile in hole is fine, and tapering is controlled.Equally, modification has also taken place in hole wall when boring.
During laser surface modification, the control energy density is more than aluminium oxide ceramics modification threshold value.When laser output average power is 4W, pulse repetition frequency is 800Hz, sweep speed is 600mm/s, the scanning pass is 1 time, adopts the mode that focuses on to scan, and hot spot can reach 10 μ m, minimum feature can reach 15 μ m, the big regional extent of big live width adopts line dense arrangement scan mode to carry out, and also can adopt the mode of out of focus, and different defocusing amounts are in conjunction with corresponding trace interval.
Behind laser surface modification, separated out metallic aluminium at ceramic surface, formed conductive layer, had electric conductivity, but its poorly conductive is that the catalysis source further forms the satisfactory electrical conductivity plain conductor with the metallic aluminium so adopt chemical plating.
3) immerse in the chemical bronze plating liquid 3 hours, form the copper coating behind the 12 μ m, immerse 10min in the chemical nickel liquid again, form the nickel dam of 3 μ m.Wherein, chemical copper liquid: CuSO45H2O 1g/L, EDTA2Na 21g/L, sodium potassium tartrate tetrahydrate 16g/L, formaldehyde 5.0g/L, potassium ferrocyanide 70mg/L, α ' bipyridine 8mg/L, PEG-1000 1g/L, plating temperature are 45 ℃, pH value 12.5; Chemical nickel-plating liquid: nickelous sulfate 28g/L, sodium hypophosphite 24g/L, sodium acetate 17g/L, malic acid 2g/L, plating temperature are 86 ℃, the pH value is 4.7.Formed fine and close Cu-Ni coating at modification area.
By above step, be implemented in quick high flexibility making double-sided wiring board on the alumina ceramic substrate, minimum feature reaches 15 μ m.
Consult the effect of Fig. 2-example shown in Figure 4, by the laser surface modification pottery, make metal conducting layer and matrix form chemical metallurgy and be combined, greatly improved the adhesion of wiring board, its heat conductivility and electrical property also all promote to some extent.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention does, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (8)
1. the method that the quick high flexibility of ceramic wiring board is made is characterized in that, may further comprise the steps:
Forming ceramic matrix, described ceramic matrix are the compound composition that contains active ion in the material composition;
Laser is radiated at the ceramic matrix surface, the chemical bond that the control laser energy density reaches the compound of active ion takes place more than the fracture threshold value, make the ceramic matrix surface that chemical reaction take place and separate out active material as chemical plating catalysis source, the active material that reaction generates is that chemical metallurgy is combined with matrix, wherein, at different ceramic materials, chemical bond energy according to the ceramic material composition, select different lasing light emitters, by control laser output average power, pulse repetition frequency, sweep speed, defocusing amount and trace interval and scanning pass, the control laser energy reaches ceramic modified threshold value;
To be positioned over plating in the chemical plating fluid through the ceramic matrix after laser modified, form the coat of metal.
2. the method for claim 1, it is characterized in that, comprise with described laser when ceramic matrix is implemented boring, to at the bottom of the hole wall in the hole of boring and the blind hole hole modification has taken place also, separate out active material as chemical plating catalysis source, the active material that reaction generates is that chemical metallurgy is combined with matrix.
3. method as claimed in claim 1 or 2, it is characterized in that, adopt lasing light emitter to comprise that centre wavelength is the lasing light emitter of 157-1064nm wave band, be preferably short wavelengths' such as centre wavelength green glow 532nm, ultraviolet 355 nm, ultraviolet 266 nm or ultraviolet 248nm nanosecond, psec or femtosecond pulse source.
4. method as claimed in claim 2, it is characterized in that, carry out modification to aluminium nitride or aluminium oxide ceramics laser drill with to hole wall, adopt the mode that focuses on to hole, and focal height descends along with drilling depth, multipass, up to drilling or reaching the required degree of depth of blind hole, process conditions are as follows:
When adopting centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, drilling parameter is: laser output average power is 8-10W, and pulse repetition frequency is 80-150kHz, and sweep speed is 30-150mm/s, perhaps
When adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, drilling parameter is: laser output average power is 10-12W, and pulse repetition frequency is 60-120kHz, and sweep speed is 30-120mm/s, perhaps
When adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, drilling parameter is: laser output average power is 4-5W, and pulse repetition frequency is 200-400kHz, and sweep speed is 50-100mm/s, perhaps
When adopting centre wavelength green glow 532nm pulsed laser source, drilling parameter is: when laser output average power was 15-20W, pulse repetition frequency was 60-100kHz, and sweep speed is 80-200mm/s.
5. as each described method of claim 1 to 4, it is characterized in that, adopt following parameter control laser that modification is carried out on the surface of aluminium nitride or aluminium oxide ceramics:
When adopting centre wavelength ultraviolet 355nm ps pulsed laser and ns pulsed laser source, when laser output average power was 4-10W, pulse repetition frequency was 50-400kHz, and sweep speed is 500-5000mm/s;
Adopt the mode that focuses on to scan, hot spot is low to moderate 20 μ m, minimum feature is low to moderate the spot size size, the scanning pass is 1-10 time, trace interval is the 0.01-0.04mm/ bar, or adopt the mode of out of focus to scan, and different defocusing amounts are carried out zone modification fast in conjunction with corresponding trace interval, and the scanning pass is 1-10 time.
6. as each described method of claim 1 to 4, it is characterized in that, adopt following parameter control laser that modification is carried out on the surface of aluminium nitride or aluminium oxide ceramics:
When adopting centre wavelength ultraviolet 248nm excimer pulsed laser source, when laser output average power was 6-12W, pulse repetition frequency was 50-200kHz, and sweep speed is 400-4000mm/s;
Adopt the mode that focuses on to scan, hot spot is low to moderate 50 μ m, minimum feature is low to moderate the spot size size, the scanning pass is 1-10 time, trace interval is the 0.025-0.10mm/ bar, or adopt the mode of out of focus to scan, and different defocusing amounts are carried out zone modification fast in conjunction with corresponding trace interval, and the scanning pass is 1-10 time.
7. as each described method of claim 1 to 4, it is characterized in that, adopt following parameter control laser that modification is carried out on the surface of aluminium oxide or aluminium nitride ceramics:
When adopting centre wavelength ultraviolet 266nm picosecond pulse laser source, when laser output average power was 2-5W, pulse repetition frequency was 100-1000kHz, and sweep speed is 200-3000mm/s;
Adopt the mode that focuses on to scan, hot spot is low to moderate 10 μ m, minimum feature is low to moderate the spot size size, the scanning pass is 1-10 time, trace interval is the 0.005-0.02mm/ bar, or adopt the mode of out of focus to scan, and different defocusing amounts are carried out zone modification fast in conjunction with corresponding trace interval, and the scanning pass is 1-10 time.
8. as each described method of claim 1 to 4, it is characterized in that, adopt following parameter control laser that modification is carried out on the surface of aluminium oxide or aluminium nitride ceramics:
When adopting centre wavelength green glow 532nm pulsed laser source, when laser output average power was 12-20W, pulse repetition frequency was 60-300kHz, and sweep speed is 300-4500mm/s;
Adopt the mode that focuses on to scan, hot spot is low to moderate 25 μ m, minimum feature is low to moderate the spot size size, the scanning pass is 1-10 time, trace interval is the 0.01-0.10mm/ bar, or adopt the mode of out of focus to scan, and different defocusing amounts are carried out zone modification fast in conjunction with corresponding trace interval, and the scanning pass is 1-10 time.
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