CN112512221A - Preparation method of metal conductor-coated ceramic circuit substrate - Google Patents
Preparation method of metal conductor-coated ceramic circuit substrate Download PDFInfo
- Publication number
- CN112512221A CN112512221A CN202011352684.3A CN202011352684A CN112512221A CN 112512221 A CN112512221 A CN 112512221A CN 202011352684 A CN202011352684 A CN 202011352684A CN 112512221 A CN112512221 A CN 112512221A
- Authority
- CN
- China
- Prior art keywords
- metal film
- substrate
- metal
- metal conductor
- ceramic substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a preparation method of a metal conductor-coated ceramic circuit substrate, which comprises the following steps: s1: etching a desired circuit pattern on the ceramic substrate using a laser beam; s2: carrying out multi-layer metal chemical coating; s3: and carrying out one-time hydrogen peroxide sintering reaction. The metal conductor-coated ceramic circuit substrate prepared by the invention has the characteristics of high bonding strength, good conductivity, high substrate strength, excellent quality and the like.
Description
Technical Field
The invention relates to the technical field of electronic ceramic materials, in particular to a preparation method of a metal conductor-coated ceramic circuit substrate.
Background
The existing aluminum nitride-silicon nitride ceramic substrate coated metal conductor (copper, gold, silver, nickel, etc.) circuit has two main methods: active metal brazing ceramic substrate (AlN or Si) by (AMB indirect metal conductor copper, nickel and the like) method3N4) The solder is prepared by using a small amount of active elements (usually, transition group elements such as: titanium, zirconium, etc.), and a small amount of glass phase in the ceramic substrate are sintered to react to obtain a transition intermediate layer, and then the transition intermediate layer is coated with conductor copper (or other large metals) to be sintered and adhered; a. a thin film method: the metal film is prepared by PVD methods such as ion plating, vacuum evaporation and sputtering coating. These methods are large in equipment investment and difficult to produce on a large scale. b. A thick film method: is prepared through preparing thick-film paste, silk-screen printing on ceramic substrate to form conductor or resistor, and sinteringAnd (4) forming a circuit. The method has insufficient bonding strength and is greatly affected by temperature control. c. Chemical coating method: the metal ions in the solution are reduced on the surface of the ceramic substrate with catalytic activity by utilizing a reducing agent to form a metal coating. This method has a drawback that the bonding strength is not high. The other method (DBC direct copper coating method) is to prepare a ceramic substrate (AlN or Si)3N4Etc.) is subjected to thermal (oxidation) treatment and then bonded and sintered with a conductor copper oxide layer (or other metals) through the oxide layer. The main drawback is the low reliability.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a preparation method of a metal conductor-coated ceramic circuit substrate, which has the advantages of high bonding strength, good conductivity, high substrate strength and excellent quality.
In order to solve the technical problems, the invention adopts the following technical scheme: the preparation method of the metal conductor-coated ceramic circuit substrate comprises the following steps:
s1: etching a desired circuit pattern on the ceramic substrate using a laser beam;
s2: carrying out multi-layer metal chemical coating;
s3: and carrying out one-time hydrogen peroxide sintering reaction.
Preferably, before the laser beam engraving the circuit pattern in step S1, the method further comprises the steps of: a. selecting an aluminum nitride and silicon nitride ceramic substrate; b. degreasing the selected ceramic substrate, ultrasonically cleaning and drying; c. selecting a laser engraving machine with thermal effect.
Preferably, the laser beam patterning comprises the following specific steps: a. adjusting the size of the laser beam port to achieve the width of the circuit path; b. adjusting power and speed by using a test piece; c. setting a reasonable program control program for engraving circuit patterns; d. the ceramic substrate of the device is automatically carved into a required circuit diagram board.
Preferably, the specific steps of performing the multilayer metal electroless plating comprise: a. soaking the ceramic substrate etched by the laser in a hydrochloric acid solution with the concentration of 20% for 3 minutes, taking out the ceramic substrate, washing the ceramic substrate in tap water, and then performing ultrasonic decontamination and cleaning in deionized water with the temperature of 50 ℃; b. soaking the cleaned ceramic substrate in an activating solution for 1-3 minutes; c. chemically plating a first metal film in the prepared bottom layer chemical plating solution; d. chemically plating a second metal film on the first metal film; e. chemically plating a third metal film on the second metal film; f. and after the chemical plating, carrying out ultrasonic cleaning and drying.
Preferably, the first metal film comprises Ti or Fe, and the thickness of the first metal film is 0.8-1.8 um.
Preferably, the second metal film comprises Ag or Ni and has a thickness of 0.5-1.5 um.
Preferably, the third metal film comprises Cu or Pt or Au, and the thickness is 2.5-8.5 um.
Preferably, the hydrogen peroxide sintering reaction comprises the following specific steps: a. selecting proper kiln furniture, and carrying out boat loading preparation on the ceramic substrate coated with the film; b. setting a temperature rise curve, rising the temperature at 5 degrees/minute before 300 degrees, then rising the temperature at 10 degrees/minute until 1150-1250 degrees, and preserving the temperature for 60 minutes; c. introducing dry hydrogen or nitrogen before 800 ℃, introducing wet hydrogen after 800 ℃ until high temperature is kept, cooling to 800 ℃, introducing wet hydrogen, and turning to introduce nitrogen to blow out; d. cooling to below 80 ℃, opening the furnace and taking out the parts.
Preferably, the activating solution is PdCl 2-SnCl 2.
Compared with the prior art, the invention has the advantages that: the metal conductor-coated ceramic circuit substrate prepared by the invention has the characteristics of high bonding strength, good conductivity, high substrate strength, excellent quality and the like.
Detailed Description
The present invention is further described in detail in the following specific examples, and it is obvious that the described examples are only a part of the examples of the present invention, but not all examples, and all other examples obtained by one of ordinary skill in the art without any inventive work based on the examples of the present invention belong to the protection scope of the present invention.
The preparation method of the metal conductor-coated ceramic circuit substrate of the embodiment comprises the following steps:
s1: etching a desired circuit pattern on the ceramic substrate using a laser beam;
s2: carrying out multi-layer metal chemical coating;
s3: and carrying out one-time hydrogen peroxide sintering reaction.
In this embodiment, the laser beam parameters are adjusted to obtain the required heat during the engraving process, so as to obtain a uniform oxide-oxide layer (which is a defect that the oxide layer is obtained only by a thermal [ oxidation ] treatment process in the DBC direct copper-coating method and is difficult to control) of the required ceramic substrate material at the engraving position, so that the subsequent sintering reaction with other metals to form compounds enhances the bonding force. Meanwhile, the circuit track of the needed rough surface can be obtained and adjusted after laser beam engraving, and preparation is made for omitting the process of roughening before subsequent chemical coating (in the chemical coating method, the chemical coating can be carried out only after the roughening process is carried out on the position needing to be coated on the ceramic substrate, so as to enhance the adhesive bonding force). Moreover, the ceramic substrate is not subjected to roughening treatment by a chemical method, so that the mechanical strength and the heat conducting property of the ceramic substrate are ensured.
In this embodiment, a plurality of metal electroless plating layers are formed to form one or more metal films of underlying metals (Ti, Fe, Mg, Zn, Cr, Al, Si, B, etc.), and the metal films are sintered to react with an oxide layer of a substrate to form a spinel-type compound. This forms a bonding transition layer and also greatly increases the bonding force. And one or more than two metal layers of complexing conductive metals (Ag, Pt, Ni, Cu, Au and the like) are chemically plated on the metal of the bottom layer, so that the metal layers can be well cooled and fused with each other, and can be well electrically and thermally conductive.
In this embodiment, electroless plating is melted between a plurality of metal films on a desired circuit pattern, and the melted body and an oxide layer on a ceramic substrate are reacted with each other to form a compound at an interface. The high-strength metal film-coated ceramic circuit substrate is obtained, and has good electric and thermal conductivity.
Wherein, before the laser beam engraving the circuit pattern in step S1, the method further comprises the steps of: a. selecting an aluminum nitride and silicon nitride ceramic substrate; b. deoiling the selected ceramic substrate for 3 minutes, ultrasonically cleaning for 15 minutes, and drying in an oven at 60 ℃; c. selecting a laser engraving machine with thermal effect.
The laser beam engraving circuit pattern comprises the following specific steps: a. adjusting the size of the laser beam port to achieve the width of the circuit path; b. adjusting power and speed by using a test piece to obtain the optimal thickness of an oxide layer within the range of 3-8 um, and simultaneously obtaining the roughness of the surface of a circuit path to be 0.8-1.2 um; c. setting a reasonable program control program for engraving circuit patterns; d. the ceramic substrate of the device is automatically carved into a required circuit diagram board.
The specific steps of carrying out the multilayer metal chemical plating comprise: a. soaking the ceramic substrate etched by the laser in a hydrochloric acid solution with the concentration of 20% for 3 minutes, taking out the ceramic substrate, washing the ceramic substrate in tap water, and then performing ultrasonic decontamination and cleaning in deionized water with the temperature of 50 ℃; b. soaking the cleaned ceramic substrate in an activating solution for 1-3 minutes; c. chemically plating a first metal film in the prepared bottom layer chemical plating solution; d. chemically plating a second metal film on the first metal film; e. chemically plating a third metal film on the second metal film; f. and after the chemical plating, carrying out ultrasonic cleaning and drying.
Wherein, the first layer of metal film comprises Ti or Fe, and the thickness is 0.8-1.8 um.
Wherein, the second layer of metal film comprises Ag or Ni, and the thickness is 0.5-1.5 um.
In this embodiment, the lower melting points of Ag and Ni play a role in fluxing and cooling.
Wherein the third metal film layer comprises Cu or Pt or Au, and the thickness is 2.5-8.5 um.
In this example, Cu, Pt, and Au are metals having good conductivity and not easily oxidized.
Wherein, the hydrogen-passing sintering reaction comprises the following specific steps: a. selecting proper kiln furniture, and carrying out boat loading preparation on the ceramic substrate coated with the film; b. setting a temperature rise curve, rising the temperature at 5 degrees/minute before 300 degrees, then rising the temperature at 10 degrees/minute until 1150-1250 degrees, and preserving the temperature for 60 minutes; c. introducing dry hydrogen or nitrogen before 800 ℃, introducing wet hydrogen after 800 ℃ until high temperature is kept, cooling to 800 ℃, introducing wet hydrogen, and turning to introduce nitrogen to blow out; d. cooling to below 80 ℃, opening the furnace and taking out the parts.
Wherein the activating solution is PdCl 2-SnCl 2.
The above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above-described examples. Modifications and variations that may occur to those skilled in the art without departing from the spirit and scope of the invention are to be considered as within the scope of the invention.
Claims (9)
1. A preparation method of a metal conductor-coated ceramic circuit substrate is characterized by comprising the following steps:
s1: etching a desired circuit pattern on the ceramic substrate using a laser beam;
s2: carrying out multi-layer metal chemical coating;
s3: and carrying out one-time hydrogen peroxide sintering reaction.
2. The method of manufacturing a metal conductor-clad ceramic circuit substrate as claimed in claim 1, wherein: before the step S1, the laser beam engraving circuit pattern further includes the steps of: a. selecting an aluminum nitride and silicon nitride ceramic substrate; b. degreasing the selected ceramic substrate, ultrasonically cleaning and drying; c. selecting a laser engraving machine with thermal effect.
3. The method of manufacturing a metal conductor-clad ceramic circuit substrate as set forth in claim 2, wherein: the laser beam circuit pattern engraving method specifically comprises the following steps: a. adjusting the size of the laser beam port to achieve the width of the circuit path; b. adjusting power and speed by using a test piece; c. setting a reasonable program control program for engraving circuit patterns; d. the ceramic substrate of the device is automatically carved into a required circuit diagram board.
4. The method of manufacturing a metal conductor-clad ceramic circuit substrate as set forth in claim 3, wherein: the specific steps for carrying out the multilayer metal electroless plating comprise: a. soaking the ceramic substrate etched by the laser in a hydrochloric acid solution with the concentration of 20% for 3 minutes, taking out the ceramic substrate, washing the ceramic substrate in tap water, and then performing ultrasonic decontamination and cleaning in deionized water with the temperature of 50 ℃; b. soaking the cleaned ceramic substrate in an activating solution for 1-3 minutes; c. chemically plating a first metal film in the prepared bottom layer chemical plating solution; d. chemically plating a second metal film on the first metal film; e. chemically plating a third metal film on the second metal film; f. and after the chemical plating, carrying out ultrasonic cleaning and drying.
5. The method of manufacturing a metal conductor-clad ceramic circuit substrate as claimed in claim 4, wherein: the first layer of metal film comprises Ti or Fe, and the thickness of the first layer of metal film is 0.8-1.8 um.
6. The method of manufacturing a metal conductor-clad ceramic circuit substrate as claimed in claim 4, wherein: the second layer of metal film comprises Ag or Ni, and the thickness of the second layer of metal film is 0.5-1.5 um.
7. The method of manufacturing a metal conductor-clad ceramic circuit substrate as claimed in claim 4, wherein: the third layer of metal film comprises Cu or Pt or Au, and the thickness of the third layer of metal film is 2.5-8.5 um.
8. The method of manufacturing a metal conductor-clad ceramic circuit substrate as claimed in claim 4, wherein: the hydrogen-passing sintering reaction comprises the following specific steps: a. selecting proper kiln furniture, and carrying out boat loading preparation on the ceramic substrate coated with the film; b. setting a temperature rise curve, rising the temperature at 5 degrees/minute before 300 degrees, then rising the temperature at 10 degrees/minute until 1150-1250 degrees, and preserving the temperature for 60 minutes; c. introducing dry hydrogen or nitrogen before 800 ℃, introducing wet hydrogen after 800 ℃ until high temperature is kept, cooling to 800 ℃, introducing wet hydrogen, and turning to introduce nitrogen to blow out; d. cooling to below 80 ℃, opening the furnace and taking out the parts.
9. The method of manufacturing a metal conductor-clad ceramic circuit substrate as claimed in claim 4, wherein: the activating solution is PdCl 2-SnCl 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011352684.3A CN112512221B (en) | 2020-11-26 | 2020-11-26 | Preparation method of metal conductor-coated ceramic circuit substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011352684.3A CN112512221B (en) | 2020-11-26 | 2020-11-26 | Preparation method of metal conductor-coated ceramic circuit substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112512221A true CN112512221A (en) | 2021-03-16 |
| CN112512221B CN112512221B (en) | 2023-03-21 |
Family
ID=74966439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011352684.3A Active CN112512221B (en) | 2020-11-26 | 2020-11-26 | Preparation method of metal conductor-coated ceramic circuit substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112512221B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040035693A1 (en) * | 2002-08-26 | 2004-02-26 | Shao-Pin Ru | Method for removing voids in a ceramic substrate |
| CN104392935A (en) * | 2014-11-10 | 2015-03-04 | 北京大学东莞光电研究院 | Metallization method of power device module encapsulation-used ceramic substrate |
| CN108054106A (en) * | 2018-01-11 | 2018-05-18 | 北京大学东莞光电研究院 | A kind of method for preparing high heat dissipation ceramic package substrate |
| CN108658627A (en) * | 2018-06-01 | 2018-10-16 | 中国工程物理研究院流体物理研究所 | A kind of method for metallising of aluminium nitride ceramics |
-
2020
- 2020-11-26 CN CN202011352684.3A patent/CN112512221B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040035693A1 (en) * | 2002-08-26 | 2004-02-26 | Shao-Pin Ru | Method for removing voids in a ceramic substrate |
| CN104392935A (en) * | 2014-11-10 | 2015-03-04 | 北京大学东莞光电研究院 | Metallization method of power device module encapsulation-used ceramic substrate |
| CN108054106A (en) * | 2018-01-11 | 2018-05-18 | 北京大学东莞光电研究院 | A kind of method for preparing high heat dissipation ceramic package substrate |
| CN108658627A (en) * | 2018-06-01 | 2018-10-16 | 中国工程物理研究院流体物理研究所 | A kind of method for metallising of aluminium nitride ceramics |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112512221B (en) | 2023-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5058799A (en) | Metallized ceramic substrate and method therefor | |
| JP4811756B2 (en) | Method for manufacturing metal-ceramic bonding circuit board | |
| US9017563B2 (en) | Plating method of circuit substrate, production method of plated circuit substrate, and silver etching liquid | |
| CN104105353B (en) | A kind of manufacture method of high-precision ceramic circuit board | |
| JPS6133077B2 (en) | ||
| CN108054106B (en) | Method for preparing high-heat-dissipation ceramic packaging substrate | |
| JP2018145047A (en) | Method for producing metal/ceramic circuit board | |
| JP7512507B2 (en) | Ceramic copper-clad laminate and method for producing the same | |
| JP2001130986A (en) | Copper plated ceramic board, peltier element using the same and method for producing copper plated ceramic board | |
| CN109608221A (en) | A kind of preparation method of aluminium nitride ceramic copper-clad substrate | |
| RU2494492C1 (en) | Method to create conducting paths | |
| CN111876728A (en) | Preparation method of gold-tin alloy film | |
| US4964923A (en) | Method of forming a copper film on a ceramic body | |
| CN115557798A (en) | AlN ceramic copper-clad substrate with firmly combined copper layer and ceramic substrate and preparation method thereof | |
| CN108184312A (en) | A kind of double-side conduction ceramic circuit-board and preparation method thereof | |
| CN102762037B (en) | A kind of ceramic circuit board and manufacture method thereof | |
| CN112512221B (en) | Preparation method of metal conductor-coated ceramic circuit substrate | |
| WO2014084077A1 (en) | Ceramic copper-metallized wiring board and process for producing same | |
| JP2003218518A (en) | Manufacturing method for circuit board | |
| JP5643959B2 (en) | Method for manufacturing metal-ceramic bonding circuit board | |
| JP2007109858A (en) | Wiring board and method of manufacturing same | |
| CN113088289A (en) | Etching solution, application thereof and preparation method of high-bonding-strength metal layer on ceramic surface | |
| CN111885852A (en) | Preparation method of ceramic copper-clad plate | |
| JPH05160551A (en) | Method of manufacturing electronic part mounting aluminum nitride board | |
| KR102201500B1 (en) | Ceramic housing and plating method of ceramic material |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |