CN111876728A - Preparation method of gold-tin alloy film - Google Patents
Preparation method of gold-tin alloy film Download PDFInfo
- Publication number
- CN111876728A CN111876728A CN202010737990.2A CN202010737990A CN111876728A CN 111876728 A CN111876728 A CN 111876728A CN 202010737990 A CN202010737990 A CN 202010737990A CN 111876728 A CN111876728 A CN 111876728A
- Authority
- CN
- China
- Prior art keywords
- gold
- tin
- layer
- film
- tin alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5893—Mixing of deposited material
Abstract
The invention relates to a preparation process of a multilayer gold-tin alloy film for eutectic welding, which is characterized in that the thickness of a film layer is calculated according to theory, a multilayer structure simple substance film is formed by combining a magnetron sputtering mode, and the gold-tin alloy film with complete gold-tin alloying and uniform components is prepared by a rapid post-annealing treatment process. The gold-tin alloy film is prepared by taking simple substance metal as a raw material, so that the process is effectively simplified; the preparation method of magnetron sputtering is adopted, the defects of a chemical method and a vacuum evaporation method are avoided, the gold-tin laminated film with controllable components and thickness, complex pattern and flexible position can be prepared, the process stability is good, and the method is suitable for mass production; the alloying area of the thin film layer can be effectively adjusted through layer number adjustment and thermal annealing treatment, and the thin film layer with uniform alloying is obtained; the RTP rapid thermal annealing treatment is adopted, so that the annealing time is greatly shortened, and the production efficiency is effectively improved; the ratio of the gold to the tin alloy can be controlled to be 80: 20-70: 30, and the method is suitable for eutectic welding.
Description
Technical Field
The invention relates to a preparation method of a gold-tin alloy film, in particular to a preparation process of a gold-tin alloy film which has a multi-layer structure and can be used for eutectic welding and has adjustable components, belongs to the technical field of microelectronic technology and semiconductor packaging, and is mainly applied to high-reliability packaging of products such as a film circuit, a ceramic heat sink, a single-layer capacitor and the like.
Background
Compared with the traditional welding and packaging process, the Au-Sn eutectic solder has the advantages of excellent physical properties, such as high strength of a welding head, moderate welding temperature, good wetting property, no need of soldering flux, corrosion resistance and the like, and is widely applied to the semiconductor welding process with high requirements on heat dissipation and reliability. In recent years, attention has been paid to the fields of radio frequency, optical communication, MEMS, and the like. Among them, the traditional way of presetting the gold-tin alloy sheet is no longer applicable to products such as thin film circuits, ceramic heat sinks, single-layer capacitors and the like. On one hand, the thickness of the preset gold-tin alloy sheet is not less than 25 μm at the thinnest, which far exceeds the requirement of a welding functional layer (2-5 μm) in the product, and the automation degree is low, thereby improving the cost; on the other hand, the pattern requirement of the welding position of the product is complex, the position is flexible, the precision is high, and the preset gold-tin alloy sheet cannot be met. Therefore, the gold-tin alloy layer with controllable components and thickness prepared by adopting the thin film process is an important process method for obtaining high-reliability welding of the products.
At present, the methods for preparing the gold-tin alloy film mainly comprise electroplating and vacuum plating. The electroplating process is complex, the parameter control requirement is extremely high, the uniformity of the film-forming thickness and components is poor, the process controllability is poor, and the industrial production is not facilitated. Compared with an electroplating method, the vacuum coating method has a more controllable process, high film forming stability and environmental protection, and mainly comprises an evaporation method and a magnetron sputtering method. The former has the defects of low utilization rate of evaporation materials, low thickness control precision and the like, and is not widely used in industrial production. The latter is suitable for mass production with higher control precision and better repeatability. For the heat treatment process after coating, a tube furnace with longer treatment time is conventionally adopted.
In conclusion, the magnetron sputtering method and the rapid annealing (RTP) treatment different from the conventional method are adopted, so that the controllability of the components and the thickness and the precision of the alloy film can be effectively improved, the uniform alloying of the film layer is ensured, meanwhile, the process repeatability is good, the cost performance is high, and the method is suitable for the preparation and the batch production of the gold-tin alloy film for eutectic welding.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the preparation method of the gold-tin alloy film, and the gold-tin alloy film prepared by the method has the advantages of adjustable components, good adhesive force, uniform thickness, accurate control and capability of meeting the eutectic welding requirement.
In order to achieve the purpose, the invention adopts the technical scheme that: a preparation method of a gold-tin alloy film comprises the following steps:
(1) designing the simple substance gold-tin alloy thin film layer: calculating the thickness ratio of the simple substance gold layer and the tin layer according to a mass density formula M ═ rho V and the gold-tin ratio of the gold-tin alloy film; determining the total thickness of the simple substance gold layer and the tin layer according to the thickness of the gold-tin alloy film, and then determining the thickness of each layer of the simple substance gold layer and the tin layer according to the number of layers of the gold-tin alloy film;
(2) processing the ceramic substrate;
(3) adopting magnetron direct current sputtering to plate simple substance gold layers and tin layers on the ceramic substrate alternately to obtain a film with a laminated structure;
(4) and (4) carrying out thermal annealing treatment on the film with the laminated structure obtained in the step (3) by adopting rapid annealing, and cooling along with the furnace to obtain the gold-tin alloy film.
The technical problem to be solved in the application is that the alloying of the gold-tin film is uniform, through the design of a multilayer structure simple substance film material, a multilayer structure gold-tin film is prepared on different substrates by adopting magnetron sputtering equipment, the gold-tin films with different compositions are prepared, then annealing treatment is carried out by adopting a heat treatment process, and the prepared gold-tin alloy film has controllable components and thickness, is uniform in film alloying and is suitable for batch production.
The invention relates to a preparation process of a multilayer gold-tin alloy film for eutectic welding, which is characterized in that the thickness of a film layer is calculated according to theory, a multilayer structure simple substance (gold and tin) film is formed by combining a magnetron sputtering mode, and then the gold-tin alloy film with complete gold-tin alloying and uniform components is prepared by a rapid post-annealing treatment process.
The innovation of the application is as follows: 1. the elemental metal film with a multilayer structure is adopted, so that the component segregation of the sputtering of the alloy target is avoided; 2. the magnetron sputtering process which is efficient, high in film forming stability and environment-friendly is adopted as the film preparation method; 3. the rapid thermal annealing treatment is adopted, so that the post-annealing process time can be effectively prolonged; 4. the alloy film with the weight ratio of gold to tin of 80:20 is actually prepared and can be used for gold-tin welding.
As a preferred embodiment of the preparation method of the present invention, in the step (1), the number of layers of the gold-tin alloy thin film is not less than 5, and the elemental gold layer is an outermost layer and the number of layers is one layer more than that of the elemental tin layer.
The thickness of each layer can be equally divided according to the area of the film layer needing alloying, and the film layer thickness can also be divided according to different density degrees.
As a preferred embodiment of the preparation method of the present invention, in the step (2), the ceramic substrate is an alumina ceramic sheet.
As a preferred embodiment of the preparation method of the present invention, in the step (2), the treatment operation is: and ultrasonically cleaning the ceramic substrate for 10-30 min by sequentially adopting acetone, pure water and ethanol, and then drying at the drying temperature of not less than 100 ℃ for not less than 1 h.
As a preferred embodiment of the preparation method of the present invention, in the step (3), a mask is used to block an area that is not to be covered with a thin film before plating.
As a preferred embodiment of the preparation method of the present invention, the mask shielding is mechanical mask shielding or photomask shielding.
Mechanical masking is the direct attachment of a mechanical mask to an alumina ceramic substrate.
As a preferable embodiment of the preparation method of the present invention, in the step (3), the outermost layer of the stacked structure thin film is an elemental gold layer. In order to prevent oxidation, the outermost layer of the stacked-structure thin film, i.e., the outermost layer away from the substrate, should be an elemental gold layer.
As a preferred embodiment of the preparation method of the present invention, in the step (3), during the magnetron DC sputtering process, the background vacuum is not higher than 10-4Pa, the working pressure of 0.1-0.6 Pa, normal temperature, power of 50-150W, gold layer coating time of 10-150 sec, and tin layer coating time of 10-100 sec. Magnetron sputtering methods include, but are not limited to, DC, RF, co-sputtering.
In the step (4), annealing is performed under vacuum, wherein the annealing temperature is 260-320 ℃, the temperature rise time is 20-50 sec, and the heat preservation time is not less than 10 min.
In a preferred embodiment of the preparation method of the present invention, in the step (4), the weight ratio of gold to tin in the gold-tin alloy thin film is 80:20 to 70: 30.
The structure for equally dividing the thickness of the simple substance film layer can obtain a gold-tin film with uniform alloying, and when the weight ratio of gold to tin in the alloy film is controlled to be 80: 20-70: 30, the gold-tin film can be used for eutectic welding; the structure of the thickness of the simple substance film layer is split for different density degrees, so that the locally alloyed gold-tin film can be obtained, and the locally alloyed area can be arranged above, in the middle, below or at any specified position of the film layer.
Compared with the prior art, the invention has the beneficial effects that: the gold-tin alloy film is prepared by taking simple substance metal as a raw material, so that the process is effectively simplified; the preparation method adopts magnetron sputtering, avoids the defects of a chemical method and a vacuum evaporation method, can prepare the gold-tin laminated film with controllable components and thickness, complex pattern and flexible position, has good process stability and is suitable for mass production; the alloying area of the thin film layer can be effectively adjusted through layer number adjustment and thermal annealing treatment, and the thin film layer with uniform alloying is obtained; the RTP rapid thermal annealing treatment is adopted, so that the annealing time is greatly shortened, and the production efficiency is effectively improved; the ratio of the gold to the tin alloy can be controlled to be 80: 20-70: 30, and the method is suitable for eutectic welding.
Drawings
FIG. 1 is a structural diagram of a Au-Sn alloy thin film according to the present invention.
FIG. 2 is a scanning electron microscope photograph of a tin alloy thin film in example 1.
FIG. 3 is a cross-sectional view and a composition diagram of the Au-Sn alloy thin film after the rapid annealing in example 1.
FIG. 4 is a cross-sectional profile and composition diagram of the Au-Sn alloy thin film after the rapid annealing in example 2.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to the accompanying drawings and specific embodiments.
The structure of the gold-tin alloy film of the present invention is shown in FIG. 1.
Example 1
A preparation method of a gold-tin alloy film comprises the following steps:
(1) designing the simple substance gold-tin alloy thin film layer: ρ V is known from the mass density formula M ═ ρ VAu＝19.32g/cm3，ρSn＝7.28g/cm3Calculating and designing the thickness ratio T of the simple substance gold layer to the tin layerAu/TSn1.507; determining the total thickness T of the simple substance gold layer and the tin layer according to the thickness of the gold-tin alloy film of 2 mu mAu＝1.2μm、TSnThe thickness t of each simple substance gold layer and each tin layer is determined according to the number n of the gold-tin alloy thin film which is 0.8 mu m and 41Au＝TAu/21＝0.06μm，tSn＝TSn/20＝0.04μm；
(2) Treating the ceramic substrate: the ceramic substrate is an alumina ceramic wafer, and is dried after being ultrasonically cleaned for 10min by sequentially adopting acetone, pure water and ethanol, wherein the drying temperature is 120 ℃, and the drying time is 1 h;
(3) before coating, masking the region without film, and directly fixing the mechanical mask on the alumina ceramic by mechanical maskingOn a porcelain substrate; adopting magnetron direct current sputtering to plate simple substance gold layers and tin layers on the ceramic substrate alternately to obtain a laminated structure film, wherein the outermost layer of the laminated structure film is the simple substance gold layer; during the magnetron DC sputtering process, the background vacuum is 6.3E-4Pa, the working pressure is 0.4Pa, the normal temperature is 70W, the gold layer coating time is 100sec, and the tin layer coating time is 80 sec;
(4) carrying out thermal annealing treatment on the film with the laminated structure obtained in the step (3) by adopting rapid annealing, and cooling along with a furnace to obtain a gold-tin alloy film; annealing under a vacuum condition, wherein the annealing temperature is 260-320 ℃, the temperature rise time is 20sec, and the heat preservation time is 10 min.
The weight ratio of gold to tin in the gold-tin alloy film prepared in this example was 80.1: 19.9.
The scanning electron microscope image of the gold-tin alloy thin film prepared in this example is shown in fig. 2, and the cross-sectional morphology and composition diagram of the gold-tin alloy thin film after rapid annealing is shown in fig. 3. As can be seen from the graphs in FIGS. 2 to 3, the prepared film has the advantages of compact and flat surface, small roughness, good uniformity of the section of the film, complete alloying between Au and Sn and capability of ensuring that the alloy ratio of the surface and the section of the film is within the range of the design value. The layered magnetron sputtering method can prepare the compact, flat and uniformly alloyed gold-tin alloy film solder, and provides certain reference and guidance for the gold-tin alloy film solder in the semiconductor packaging technology.
Example 2
A preparation method of a gold-tin alloy film comprises the following steps:
(1) designing the simple substance gold-tin alloy thin film layer: ρ V is known from the mass density formula M ═ ρ VAu＝19.32g/cm3，ρSn＝7.28g/cm3And calculating to obtain the thickness ratio T of the simple substance gold layer and the tin layerAu/TSn1.507; determining the total thickness T of the simple substance gold layer and the tin layer according to the thickness of 1 mu m of the gold-tin alloy filmAu＝0.60μm、TSnThe thickness t of each simple substance gold layer and each tin layer is determined according to the number n of the gold-tin alloy thin film which is 0.40 mu m and 21Au＝TAu/11＝0.05μm，tSn＝TSn/10＝0.04μm；
(2) Treating the ceramic substrate: the ceramic substrate is an alumina ceramic wafer, and is dried after being ultrasonically cleaned for 10min by sequentially adopting acetone, pure water and ethanol, wherein the drying temperature is 120 ℃, and the drying time is 1.5 h;
(3) before coating, masking the area which does not need to be covered with a film, and directly fixing a mechanical mask on the alumina ceramic substrate by adopting mechanical masking; adopting magnetron direct current sputtering to plate simple substance gold layers and tin layers on the ceramic substrate alternately to obtain a laminated structure film, wherein the outermost layer of the laminated structure film is the simple substance gold layer; during the magnetron DC sputtering process, the background vacuum is 6.0E-4Pa, the working pressure is 0.4Pa, the normal temperature is high, the power is 70W, the gold layer coating time is 50sec, and the tin layer coating time is 40 sec;
(4) carrying out thermal annealing treatment on the film with the laminated structure obtained in the step (3) by adopting rapid annealing, and cooling along with a furnace to obtain a gold-tin alloy film; annealing under vacuum condition, wherein the annealing temperature is 320 ℃, the temperature rise time is 20sec, and the heat preservation time is 10 min.
The weight ratio of gold to tin in the gold-tin alloy film prepared in this example was 77.8: 22.2.
The cross-sectional morphology and the composition diagram of the gold-tin alloy thin film after the rapid annealing of the gold-tin alloy thin film prepared in the embodiment are shown in fig. 4. As can be seen from FIG. 4, the prepared thin film is dense and has good section uniformity, and an alloying thin film is formed between Au and Sn, so that the alloy ratio of the surface and the cross section of the thin film is within the design value range.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (10)
1. The preparation method of the gold-tin alloy film is characterized by comprising the following steps:
(1) designing the simple substance gold-tin alloy thin film layer: calculating the thickness ratio of the simple substance gold layer and the tin layer according to a mass density formula M ═ rho V and the gold-tin ratio of the gold-tin alloy film; determining the total thickness of the simple substance gold layer and the tin layer according to the thickness of the gold-tin alloy film, and then determining the thickness of each layer of the simple substance gold layer and the tin layer according to the number of layers of the gold-tin alloy film;
(2) processing the ceramic substrate;
(3) adopting magnetron direct current sputtering to plate simple substance gold layers and tin layers on the ceramic substrate alternately to obtain a film with a laminated structure;
(4) and (4) carrying out thermal annealing treatment on the film with the laminated structure obtained in the step (3) by adopting rapid annealing, and cooling along with the furnace to obtain the gold-tin alloy film.
2. The production method according to claim 1, wherein in the step (1), the number of layers of the gold-tin alloy thin film is not less than 5, and the elemental gold layer is the outermost layer and the number of layers is one more than that of the elemental tin layer.
3. The method according to claim 1, wherein in the step (2), the ceramic substrate is an alumina ceramic sheet.
4. The method according to claim 1, wherein in the step (2), the treatment operation is: and ultrasonically cleaning the ceramic substrate for 10-30 min by sequentially adopting acetone, pure water and ethanol, and then drying at the drying temperature of not less than 100 ℃ for not less than 1 h.
5. The method according to claim 1, wherein in the step (3), the area not covered with the thin film is masked before the coating.
6. The method of claim 5, wherein the mask is a mechanical mask or a photomask mask.
7. The production method according to claim 1, wherein in the step (3), the outermost layer of the thin film of the stacked structure is an elemental gold layer.
8. The method of claim 1, wherein in step (3), the background vacuum during magnetron DC sputtering is not higher than 10-4Pa, the working pressure of 0.1-0.6 Pa, normal temperature, power of 50-150W, gold layer coating time of 10-150 sec, and tin layer coating time of 10-100 sec.
9. The preparation method according to claim 1, wherein in the step (4), annealing is performed under vacuum, the annealing temperature is 260-320 ℃, the temperature rise time is 20-50 sec, and the heat preservation time is not less than 10 min.
10. The preparation method according to claim 1, wherein in the step (4), the weight ratio of gold to tin in the gold-tin alloy film is 80: 20-70: 30.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010737990.2A CN111876728A (en) | 2020-07-28 | 2020-07-28 | Preparation method of gold-tin alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010737990.2A CN111876728A (en) | 2020-07-28 | 2020-07-28 | Preparation method of gold-tin alloy film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111876728A true CN111876728A (en) | 2020-11-03 |
Family
ID=73201808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010737990.2A Pending CN111876728A (en) | 2020-07-28 | 2020-07-28 | Preparation method of gold-tin alloy film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111876728A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779501A (en) * | 2020-12-26 | 2021-05-11 | 广东工业大学 | Gold-tin alloy heat sink film, preparation method thereof, heat sink substrate and LED device |
| CN113394186A (en) * | 2021-06-11 | 2021-09-14 | 赛创电气（铜陵）有限公司 | Metal laminated structure, chip and manufacturing and welding methods thereof |
| CN114164402A (en) * | 2021-11-23 | 2022-03-11 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Metal mask preparation method for wafer wet etching process |
| CN114497961A (en) * | 2021-12-15 | 2022-05-13 | 北京无线电测量研究所 | Preparation method of micro-strip circulator solder film layer |
| CN116288206A (en) * | 2023-03-21 | 2023-06-23 | 东莞市湃泊科技有限公司 | Method for preparing Au-Sn alloy solder by magnetron co-sputtering |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | Method of electroplating combined vacuum coating preparing Au-Sn alloy solder |
| CN102560371A (en) * | 2011-12-31 | 2012-07-11 | 广东风华高新科技股份有限公司 | Gold-stannum alloy film preparation technology |
| CN103170765A (en) * | 2013-03-05 | 2013-06-26 | 中国工程物理研究院应用电子学研究所 | Preparation method for gold-tin eutectic solder |
| CN104294218A (en) * | 2014-10-23 | 2015-01-21 | 中国科学院上海光学精密机械研究所 | Device and method for preparing Au-Sn film |
-
2020
- 2020-07-28 CN CN202010737990.2A patent/CN111876728A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101182642A (en) * | 2007-12-18 | 2008-05-21 | 长春理工大学 | Method of electroplating combined vacuum coating preparing Au-Sn alloy solder |
| CN102560371A (en) * | 2011-12-31 | 2012-07-11 | 广东风华高新科技股份有限公司 | Gold-stannum alloy film preparation technology |
| CN103170765A (en) * | 2013-03-05 | 2013-06-26 | 中国工程物理研究院应用电子学研究所 | Preparation method for gold-tin eutectic solder |
| CN104294218A (en) * | 2014-10-23 | 2015-01-21 | 中国科学院上海光学精密机械研究所 | Device and method for preparing Au-Sn film |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112779501A (en) * | 2020-12-26 | 2021-05-11 | 广东工业大学 | Gold-tin alloy heat sink film, preparation method thereof, heat sink substrate and LED device |
| CN113394186A (en) * | 2021-06-11 | 2021-09-14 | 赛创电气（铜陵）有限公司 | Metal laminated structure, chip and manufacturing and welding methods thereof |
| CN114164402A (en) * | 2021-11-23 | 2022-03-11 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Metal mask preparation method for wafer wet etching process |
| CN114497961A (en) * | 2021-12-15 | 2022-05-13 | 北京无线电测量研究所 | Preparation method of micro-strip circulator solder film layer |
| CN116288206A (en) * | 2023-03-21 | 2023-06-23 | 东莞市湃泊科技有限公司 | Method for preparing Au-Sn alloy solder by magnetron co-sputtering |
| CN116288206B (en) * | 2023-03-21 | 2024-03-12 | 东莞市湃泊科技有限公司 | Method for preparing Au-Sn alloy solder by magnetron co-sputtering |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111876728A (en) | Preparation method of gold-tin alloy film | |
| KR100885664B1 (en) | Method for manufacturing thick film using high rate and high density magnetron sputtering way | |
| CN108520855B (en) | Method for improving reliability of ceramic copper-clad plate by using nano silver paste | |
| CN105777210B (en) | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof | |
| EP2744310A1 (en) | Wiring substrate and method for manufacturing same and semiconductor device | |
| JPH0840789A (en) | Ceramic metallized substrate having smooth plating layer and its production | |
| RU2494492C1 (en) | Method to create conducting paths | |
| CN106958009A (en) | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof | |
| CN114478022B (en) | High-reliability aluminum nitride copper-clad ceramic substrate and preparation method thereof | |
| JPS6227393A (en) | Formation of copper film on ceramic substrate | |
| JP2023033313A (en) | Copper foil with carrier | |
| CN111302833A (en) | Method for improving wettability of aluminum to alumina ceramic | |
| CN113501725B (en) | Preparation method of aluminum-coated ceramic insulating lining plate | |
| TWI783190B (en) | laminated body | |
| CN105506624A (en) | Film plating method of aluminium nitride ceramic substrate | |
| US3791861A (en) | Method for producing thin film circuits on high purity alumina substrates | |
| JPH03179793A (en) | Surface structure of ceramic board and manufacture thereof | |
| JPH0690083A (en) | Manufacture of ceramic dbc substrate | |
| KR101961123B1 (en) | Ceramic metalizing substrate and manufacturing method thereof | |
| TWI612025B (en) | Solder for fabricating sputtering target and applying method thereof | |
| KR20110045953A (en) | Flexible cupper laminated film for a flexible circuit board and manufacturing method the same | |
| RU2405229C2 (en) | Solid-state device package | |
| CN111132466A (en) | Method for preventing metal ion migration on surface of PCB | |
| JP2003089883A (en) | Functional element and method of manufacturing the same | |
| KR102606192B1 (en) | Nickel alloy composition of copper adhesion layer for copper bonded nitride substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201103 |