CN111302833A - Method for improving wettability of aluminum to alumina ceramic - Google Patents

Method for improving wettability of aluminum to alumina ceramic Download PDF

Info

Publication number
CN111302833A
CN111302833A CN202010262321.4A CN202010262321A CN111302833A CN 111302833 A CN111302833 A CN 111302833A CN 202010262321 A CN202010262321 A CN 202010262321A CN 111302833 A CN111302833 A CN 111302833A
Authority
CN
China
Prior art keywords
aluminum
ceramic
alumina ceramic
layer
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010262321.4A
Other languages
Chinese (zh)
Inventor
尚海龙
冉准
齐小犇
杜浩明
郭乐阳
马冰洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Dianji University
Original Assignee
Shanghai Dianji University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Dianji University filed Critical Shanghai Dianji University
Priority to CN202010262321.4A priority Critical patent/CN111302833A/en
Publication of CN111302833A publication Critical patent/CN111302833A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a method for improving the wettability of aluminum to alumina ceramic, which comprises the following steps: firstly, polishing the surface of the alumina ceramic, and then placing the alumina ceramic in a vacuum chamber; pre-pumping the back bottom air pressure of the vacuum chamber, and heating the alumina ceramic; after the temperature of the alumina ceramic is reduced to room temperature, argon is filled into the vacuum chamber, and the pressure is kept; when the aluminum oxide ceramic is subjected to magnetron sputtering, firstly, an aluminum target is adopted and controlled by a direct current cathode to obtain an aluminum layer; controlling the surface of the aluminum layer by a radio frequency cathode by adopting a copper target to obtain a copper layer, wherein the aluminum oxide ceramic substrate is not heated and is not applied with negative bias in the whole film deposition process; according to the invention, an aluminum/copper double-layer film is deposited on the surface of the alumina ceramic by a magnetron sputtering method, so that the wettability of aluminum or aluminum alloy to the alumina ceramic is improved; the method of the invention realizes the direct wetting of aluminum to the alumina ceramic, and the wetted interface does not have any reaction transition layer, and can obtain high interface strength, thereby improving the mechanical property of the composite material.

Description

Method for improving wettability of aluminum to alumina ceramic
Technical Field
The invention belongs to the technical field of ceramic processing and metal matrix composite materials, and particularly relates to a method for improving the wettability of aluminum to aluminum oxide ceramic.
Background
As a basic physical and chemical phenomenon, the wettability of molten metal to ceramic has important application in material preparation, and is always concerned about, the emergence of novel ceramic and the development of new technologies such as 3D printing of metal matrix composite materials inject new vitality for the research of wetting behavior.
Al/Al2O3Is a typical metal/ceramic system, in Al-based composite material and Al2O3Ceramic brazing, etc., with Al to Al2O3The wetting behavior of ceramics is one of the most important key issues and has been of widespread interest. However, it is difficult to obtain Al from Al bath because oxide film which is extremely difficult to remove is always present on the surface of Al bath2O3Direct contact of ceramics, so that Al is opposite to Al2O3The wetting of the ceramic is difficult to realize, and even if the oxide film on the surface of the Al liquid is removed by technical means, the Al liquid can not directly wet the Al at a lower melting temperature2O3A ceramic.
The prior art mainly improves Al by two means2O3The wettability of the ceramic is achieved by a reaction wetting method, namely, Al2O3Sintering or plating on ceramic surface with Al2O3Reactive metal layer (such as Mo, W, etc.), or adding active element (such as Mg, Ti, V, etc.) into Al liquid, or adopting other technical means to make Al liquid and Al liquid react2O3The ceramic reacts to achieve reaction wetting, e.g. Al/Al in the addition of the so-called "Mg" to Al/Al2O3Study on the influence of wettability [ AliSangghaleh, Mohammad Halali.Effect of magnesium addition on the wetting ofalumina by aluminium.Applied Surface Science,2009,255:8202–8206]Reporting that: mg is added to ensure that Al liquid and Al2O3The ceramic reacts to form a reaction transition layer and improve Al to Al2O3Wettability of the ceramic, at 950 ℃, the contact angle can be reduced from 105 ° for pure Al to 85 ° for Al-7 at.%. Secondly, the temperature is raised to ensure that Al and Al are mixed2O3The wetting state of ceramics changes from non-wetting to wetting, e.g. when Shen et Al is entitled "influencing Al pairs α -Al2O3Key factors in wettability "study paper [ Ping Shen, Hidetoshi Fujii, Taihei Matsumoto and Kiyoshi Nogi I. Critical factors after examination of The wetability of α -aluminum by mole aluminum. journal of The American Ceramic Society,2004,87(11): 2151-]Reported in (1): in the presence of Al/Al2O3In the system of composition, Al liquid is opposite to Al2O3The ceramic wetting angle is reduced from 110 deg. at 700 deg. to 85 deg. at 1050 deg..
However, there are two improvements of Al over Al2O3The ceramic wetting methods have disadvantages and drawbacks, both of which are described in Al and Al2O3The interface of the ceramic generates a brittle reaction transition layer, so that the interface bonding strength is reduced, and the various properties of the material can be greatly reduced no matter in the field of ceramic particle reinforced metal matrix composite materials or in the field of ceramic connection; the latter can realize the wetting only by greatly increasing the temperature, namely, the wetting can be realized only at the temperature of over 850 ℃, and the high temperature can cause the overburning of the aluminum liquid so as to reduce the performance of the material.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a method for improving the wettability of aluminum to alumina ceramic, namely, an aluminum/copper double-layer film is deposited on the surface of the alumina ceramic by a magnetron sputtering method, so that the direct wetting of aluminum to the alumina ceramic can be realized at a lower temperature.
In order to achieve the above purpose, the solution of the invention is as follows:
a method of improving the wettability of aluminum to an alumina ceramic, comprising the steps of:
(1) first, alumina (Al)2O3) Polishing the surface of the ceramic, and placing the ceramic in a vacuum chamber after ultrasonic treatment;
(2) pre-pumping the back pressure of the vacuum chamber to be lower than 4 x 10-4Pa, heating the alumina ceramic to 400 ℃ of 200 ℃ and preserving the heat for 10-30 min;
(3) after the temperature of the alumina ceramic is reduced to room temperature, filling argon into the vacuum chamber, and keeping the pressure at 0.3-0.6 Pa;
(4) when the aluminum oxide ceramic is subjected to magnetron sputtering, firstly, an aluminum (Al) target is adopted and controlled by a direct current cathode to obtain an aluminum layer; and controlling the surface of the aluminum layer by a radio frequency cathode by adopting a copper (Cu) target to obtain a copper layer, wherein the aluminum oxide ceramic substrate is not heated and is not applied with negative bias voltage in the whole film deposition process.
Further, in the step (1), the ultrasonic process is as follows: and ultrasonically cleaning the polished aluminum oxide ceramic in acetone and alcohol for 10-20 min.
Further, in the step (3), the purity of argon gas is 99.999%.
Further, in the step (4), the outer diameter of the aluminum target is 50-80mm, and the purity is 99.999%; the outer diameter of the copper target is 50-80mm, and the purity is 99.999%.
Further, in the step (4), the thickness of the aluminum layer is 0.2-2 μm, and the thickness of the copper layer is 10-100 nm.
Due to the adoption of the scheme, the invention has the beneficial effects that:
firstly, the invention uses the magnetron sputtering method to deposit Al2O3Al/Cu double-layer film is deposited on the surface of the ceramic, thereby improving Al or Al alloy to Al2O3Wettability of the ceramic.
Secondly, the method realizes the aim of Al-to-Al2O3The direct wetting of the ceramic, no reaction transition layer exists at the wetting interface, and high interface strength can be obtained, so that the mechanical properties such as strength, hardness, modulus and the like of the composite material are improved; in addition, Al can be completely wetted at a lower temperature of 680 DEG C2O3Ceramics ofThe wetting angle is less than 10.
Thirdly, the invention can improve the efficiency of industrial production and reduce the production cost.
Drawings
FIG. 1 shows Al without depositing an Al/Cu double-layer film (a) and an Al with depositing an Al/Cu double-layer film (b) according to the present invention2O3Ceramic wafer schematic.
FIG. 2 shows Al of the present invention2O3Comparative schematic diagram of wettability experiment of ceramic wafer, wherein a and c: al without Al/Cu double-layer film deposition2O3A ceramic plate; b and d: al deposited with Al/Cu double layer film2O3And (5) ceramic plates.
Detailed Description
The invention provides a method for improving the wettability of aluminum to alumina ceramic.
Specifically, the method for improving the wettability of aluminum on alumina ceramic comprises the following steps:
(1) al is first added before coating2O3Polishing the surface of the ceramic to reduce the surface roughness, then ultrasonically cleaning the surface of the ceramic in acetone and alcohol for 15min respectively, and then placing the surface of the ceramic in a vacuum chamber;
(2) before formal film coating, pre-pumping the back pressure of the vacuum chamber to be lower than 4 multiplied by 10-4Pa, and adding Al2O3Heating the ceramic to 400 ℃, and preserving the heat for 10min to remove impurities and gases adsorbed on the surface of the ceramic;
(3) to be Al2O3After the ceramic is cooled to room temperature, filling high-purity Ar (the purity is 99.999%) into the vacuum chamber, and keeping the pressure at 0.6 Pa;
(4) to Al2O3When the ceramic is subjected to magnetron sputtering, firstly, an Al target (the purity is 99.999%) with the outer diameter of 76mm is adopted and is controlled by a direct current cathode to obtain an Al layer; the surface of the Al layer is further controlled by a radio frequency cathode by adopting a Cu target (the purity is 99.999%) with the outer diameter of 76mm to obtain a Cu layer, and Al is deposited in the whole film deposition process2O3The ceramic substrate is not heated and is not negatively biased.
Wherein, in the step (4), in the Al/Cu double-layer film, the Al layer is the bottom layer of the double-layer film and has a thickness of 0.2-2 μm, the Cu layer is the surface layer of the double-layer film and has a thickness of 10-100nm, and the very thin Cu layers can prevent the Al film from being continuously oxidized. In the Al/Cu bilayer film, the surface layer metal is not limited to Cu as long as the surface layer metal and Al can react.
In particular to Al when high-energy sputtering Al particles generated by magnetron sputtering are directly deposited2O3The impact of the ceramic surface is sufficient to overcome the energy barrier, Al2O3The Al-O chemical bonds can be obtained only by the O atoms on the surface and the Al liquid at high temperature, and once the Al-O chemical bonds on the interfaces are formed, the Al-O chemical bonds can be maintained after the Al film is heated and melted, so that the Al liquid can wet the Al at the just-melting temperature2O3A ceramic.
The following description of the invention is made for Al2O3And (3) directly brazing the ceramic chip:
two pieces of Al are put together2O3A plane of a ceramic wafer (25X 0.8mm) was polished and cleaned, as shown in FIG. 1, with an Al2O3Plating an Al/Cu double-layer film coating on the polished ceramic surface of the ceramic chip by adopting a magnetron sputtering method, and plating another Al layer on the polished ceramic surface2O3The ceramic plates are not deposited with double-layer film, both ceramic plates are placed in a vacuum furnace, a cleaned small aluminum block with the size of 2 x 2mm is placed on the sample, and the sample is pre-evacuated to 10 DEG in the vacuum furnace-5And (3) after Pa, heating to 680 ℃, keeping the temperature for 10min, then cooling along with the furnace, and comparing the spreading effects of the molten small aluminum blocks on the two samples, wherein the wetting experiment is carried out by adopting a traditional seat drop method.
Example (b): in Al2O3Depositing an Al/Cu double-layer film on the ceramic surface, wherein the thickness of the Al layer is 1 mu m, the thickness of the Cu layer is 50nm, heating to 680 ℃, and keeping the temperature for 10min to ensure that Al liquid almost completely wets the Al2O3A ceramic sheet having a wetting angle of less than 10 °.
Comparative example: al without Al/Cu double-layer film deposition2O3Heating the ceramic to 680 deg.C, and keeping the temperature for 10min, wherein the Al liquid can not wet Al2O3Ceramic wafer, wetting angle 148 °.
FIG. 2 compares aluminumBlocked in two kinds of Al2O3Wetting behavior of the ceramic sheet after melt cooling. In FIG. 2a of the sample without Al/Cu bilayer film deposited, the molten aluminum mass had agglomerated into a spherical shape, and the contact measurement of FIG. 2c shows that Al vs. Al at this time2O3The ceramic contact angle was 148 deg., these results show that the Al liquid on the sample after melting from the aluminum block and film did not wet the Al2O3. However, Al deposited with Al/Cu bilayer film2O3The ceramic sample then behaves in a distinct manner, as can be seen from fig. 2b, the liquid after melting of the aluminum block has spread completely over the surface of the ceramic together with the deposited film. The contact angle measurements in FIG. 2d show that Al vs Al at this time2O3The contact angle of the ceramic is less than 10 deg., almost completely wetted. The comparison of the two figures fully demonstrates that Al2O3The Al-to-Al ratio can be greatly improved by depositing an Al/Cu double-layer film on the surface of the ceramic2O3Wettability of the ceramic.
As shown above, the method of magnetron sputtering is adopted to deposit Al on the surface of the substrate2O3The Al/Cu double-layer film deposited on the surface of the ceramic can obviously change Al to Al2O3Wettability of the ceramic, thereby realizing Al to Al2O3Wetting the ceramic; therefore, the wetting experiment of the invention adopts the traditional seat dripping method, and Al to Al can be obtained at 680 DEG C2O3Almost complete wetting of the ceramic, with a wetting angle of less than 10.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. It will be readily apparent to those skilled in the art that various modifications to these embodiments and the generic principles defined herein may be applied to other embodiments without the use of the inventive faculty. Therefore, the present invention is not limited to the above-described embodiments. Those skilled in the art should appreciate that many modifications and variations are possible in light of the above teaching without departing from the scope of the invention.

Claims (5)

1. A method for improving the wettability of aluminum to alumina ceramics is characterized in that: which comprises the following steps:
(1) firstly, polishing the surface of the alumina ceramic, and then placing the alumina ceramic in a vacuum chamber after ultrasonic treatment;
(2) pre-pumping the back pressure of the vacuum chamber to be lower than 4 x 10-4Pa, heating the alumina ceramic to 400 ℃ of 200 ℃ and preserving the heat for 10-30 min;
(3) after the temperature of the alumina ceramic is reduced to room temperature, filling argon into the vacuum chamber, and keeping the pressure at 0.3-0.6 Pa;
(4) when the aluminum oxide ceramic is subjected to magnetron sputtering, firstly, an aluminum target is adopted and controlled by a direct current cathode to obtain an aluminum layer; and controlling the surface of the aluminum layer by a radio frequency cathode by adopting a copper target to obtain a copper layer, wherein the aluminum oxide ceramic substrate is not heated and is not applied with negative bias in the whole film deposition process.
2. The method of claim 1, wherein: in the step (1), the ultrasonic process comprises the following steps: and ultrasonically cleaning the polished aluminum oxide ceramic in acetone and alcohol for 10-20 min.
3. The method of claim 1, wherein: in the step (3), the purity of the argon is 99.999%.
4. The method of claim 1, wherein: in the step (4), the outer diameter of the aluminum target is 50-80mm, and the purity is 99.999%; the outer diameter of the copper target is 50-80mm, and the purity is 99.999%.
5. The method of claim 1, wherein: in the step (4), the thickness of the aluminum layer is 0.2-2 μm, and the thickness of the copper layer is 10-100 nm.
CN202010262321.4A 2020-04-06 2020-04-06 Method for improving wettability of aluminum to alumina ceramic Pending CN111302833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010262321.4A CN111302833A (en) 2020-04-06 2020-04-06 Method for improving wettability of aluminum to alumina ceramic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010262321.4A CN111302833A (en) 2020-04-06 2020-04-06 Method for improving wettability of aluminum to alumina ceramic

Publications (1)

Publication Number Publication Date
CN111302833A true CN111302833A (en) 2020-06-19

Family

ID=71151986

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010262321.4A Pending CN111302833A (en) 2020-04-06 2020-04-06 Method for improving wettability of aluminum to alumina ceramic

Country Status (1)

Country Link
CN (1) CN111302833A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112410742A (en) * 2020-10-30 2021-02-26 东莞市烽元科技有限公司 In Al2O3Method for plating nano-scale copper film on surface of ceramic substrate by magnetron sputtering
CN113046677A (en) * 2021-03-12 2021-06-29 昆明理工大学 Flaky ceramic/aluminum alloy composite material and preparation method thereof
CN113233878A (en) * 2021-06-17 2021-08-10 广东省科学院新材料研究所 Alumina ceramic composite material and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
陈凡等: "不基于熔态润湿的Al/Al2O3直接钎焊", 《无机材料学报》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112410742A (en) * 2020-10-30 2021-02-26 东莞市烽元科技有限公司 In Al2O3Method for plating nano-scale copper film on surface of ceramic substrate by magnetron sputtering
CN113046677A (en) * 2021-03-12 2021-06-29 昆明理工大学 Flaky ceramic/aluminum alloy composite material and preparation method thereof
CN113046677B (en) * 2021-03-12 2023-05-26 昆明理工大学 Flaky ceramic/aluminum alloy composite material and preparation method thereof
CN113233878A (en) * 2021-06-17 2021-08-10 广东省科学院新材料研究所 Alumina ceramic composite material and preparation method thereof

Similar Documents

Publication Publication Date Title
CN111302833A (en) Method for improving wettability of aluminum to alumina ceramic
JP5968479B2 (en) Method for forming a sputtering target
US20080216602A1 (en) Coating process for manufacture or reprocessing of sputter targets and x-ray anodes
CN109930125B (en) Magnetron sputtering coating method for diamond-aluminum composite material
CN109136848B (en) Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method
CN111349901B (en) Preparation method of high-temperature-resistant alumina thick film coating for cutting tool
Song et al. Wetting behavior and brazing of titanium‐coated SiC ceramics using Sn0. 3Ag0. 7Cu filler
CN111876728A (en) Preparation method of gold-tin alloy film
CN102965619A (en) Preparation method of multi-metal doping hydrogen-free diamond carbon film
CN111455333B (en) Al-Cr-O film with Al-rich corundum structure and preparation method thereof
CN105436643A (en) Direct aluminum or aluminum alloy brazing method for aluminum oxide ceramics
CN102051497B (en) Preparation methods of gold and silver embedded target and film thereof
JP2012144767A (en) Composite member, heat radiation member, semiconductor device, and method of manufacturing composite member
CN110607510A (en) Method for preparing amorphous metal vanadium film by magnetron sputtering
CN111304617A (en) Al on ZrO at Low temperature2Direct wetting method for ceramics
JP2008057045A (en) Oxide sintered compact sputtering target
CN111848226B (en) Nano metal layer ceramic substrate and manufacturing method thereof
CN112941458B (en) Chromium modified titanium and titanium alloy in-situ self-generated Ti-Al-Si gradient coating and preparation method thereof
CN108588588A (en) The preparation method of metal/non-crystaline amorphous metal diffusion couple
JP4211558B2 (en) Sputtering target material, manufacturing method thereof, and manufacturing method of transparent conductive film using the same
WO2017020534A1 (en) Silver/aluminium alloy crystal oscillation plate coating process
JP2003100154A (en) Transparent conductive film, its manufacturing method and its application
EP2835269A1 (en) A precursor plate for the manufacture of an intaglio printing plate, a method of manufacturing the precursor plate and use of the precursor plate
TWI438295B (en) Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom
CN115595580B (en) Material for forming tantalum/tantalum-iron gradient layer on carbon steel surface and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20200619