CN109136848B - Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method - Google Patents
Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method Download PDFInfo
- Publication number
- CN109136848B CN109136848B CN201810785085.7A CN201810785085A CN109136848B CN 109136848 B CN109136848 B CN 109136848B CN 201810785085 A CN201810785085 A CN 201810785085A CN 109136848 B CN109136848 B CN 109136848B
- Authority
- CN
- China
- Prior art keywords
- aluminum nitride
- nitride ceramic
- ceramic plate
- metal
- silver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a method for connecting an aluminum nitride ceramic plate and metal based on a PVD (physical vapor deposition) deposition method, which comprises the following steps: firstly, forming a titanium film on the surface of an aluminum nitride ceramic plate by a PVD (physical vapor deposition) deposition method, then depositing a silver tin layer with a certain thickness, then attaching the film-coated surface of the aluminum nitride ceramic plate and a metal plate (block) plated with a copper film by using a clamping mould, applying a certain pressure, and finally placing the aluminum nitride ceramic plate and the metal plate (block) into a vacuum annealing furnace for heating and heat preservation, so that the high-strength connection of the aluminum nitride ceramic plate and the metal can be realized. The invention simplifies the traditional ceramic metal connecting method process while obtaining high welding strength of the aluminum nitride ceramic plate and metal, avoids the problem of joint surface air tightness caused by oxide combination in a direct copper-clad method, and also improves the heat conduction and heat dissipation performance of the substrate.
Description
Technical Field
The invention belongs to the field of ceramic metallization, and particularly relates to a method for connecting an aluminum nitride ceramic plate and metal based on a PVD (physical vapor deposition) deposition method.
Background
The heat dissipation problem of high power, high density and highly integrated electronic devices seriously affects the service efficiency and service life of the devices, and is a main problem restricting the development of the devices. The aluminum nitride (AlN) ceramic has good heat-conducting property (the heat-conducting coefficient can reach 150-300W/m.K), high mechanical strength, no toxicity and other excellent properties, and is an ideal substrate material for packaging new-generation electronic devices.
However, the aluminum nitride ceramic is difficult to be effectively connected with an electronic chip or a metal copper heat sink due to strong covalent bonds, so that the use of the aluminum nitride ceramic as a packaging substrate is limited. The current general technique is to connect aluminum nitride ceramics and metals by direct copper bonding (DBC) method. The direct copper-coating method realizes the connection of aluminum nitride ceramics and copper by generating a CuAlO2 intermediate product at a certain temperature by oxidizing cuprous oxide (Cu2O) on the surface of copper and aluminum oxide (Al2O3) on the surface of aluminum nitride. But the ceramic substrate has low reaction capability with metal, poor wettability causes low connection strength, the thermal conductivity of the intermediate product of CuAlO2 is extremely low, the overall thermal conductivity is seriously reduced, and meanwhile, the air tightness of device packaging is also reduced due to the introduction of a large amount of oxygen.
Still another conventional technique addresses the bonding of aluminum nitride ceramics and copper by introducing an intermediate layer of oxide. But the thermal conductivity of the oxide intermediate layer is very low, and the performance of the aluminum nitride ceramic substrate is greatly reduced. And non-oxide eutectic alloy powder containing active metal, which is obtained through solid-phase reaction synthesis, is placed between the aluminum nitride ceramic and the copper, and then the aluminum nitride ceramic and the copper are directly combined through high-temperature treatment. The process of this method is cumbersome and requires high temperature treatment. The method is characterized in that a reaction area of NiCr and aluminum nitride ceramic is only one or two atomic layers thick, and oxygen plays an important role in combination, so that the method is only effective for connecting a thinner copper layer, and the heat conducting property of the aluminum nitride ceramic plate can be reduced.
Disclosure of Invention
The present invention aims to provide a method for joining an aluminum nitride ceramic plate and a metal based on a PVD deposition method, so as to solve the above problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for connecting an aluminum nitride ceramic plate and metal based on a PVD (physical vapor deposition) deposition method comprises the following steps:
and 4, attaching the aluminum nitride ceramic plate to the metal plated with the copper film, heating in a vacuum annealing furnace and preserving heat to complete the connection of the aluminum nitride ceramic plate and the metal.
Further, in step 2, when the titanium transition layer is deposited, the background vacuum degree of the magnetron sputtering chamber is 1 × 10- 4Pa～3×10-4Pa, sputtering argon with the purity of 99.99 percent in the sputtering gas, the air pressure of 0.3Pa to 0.5Pa, sputtering the titanium target with the purity of 99.99 percent for 15min to 25min by adopting the power of a direct current power supply of 150W, then adding the negative bias of a substrate to minus 50V to minus 100V, heating the substrate to 100 ℃ to 400 ℃, and depositing 80nm to 120nm to complete the deposition preparation of the titanium transition layer.
Further, in the step 3, when the silver-tin film solder layer is deposited by magnetron sputtering, argon with the purity of 99.99 percent is introduced, the gas flow is 20 sccm-40 sccm, the gas pressure is 0.3 Pa-0.5 Pa, the silver-tin target adopts the direct-current power supply power of 130W-160W, the negative bias voltage of the substrate is-60V-100V, and the preparation of the silver-tin solder layer is completed after deposition for 80 min-100 min.
Further, in the step 4, the aluminum nitride ceramic plate is attached to the metal plated with the copper film through the clamping die, the pressure applied by the clamping die when the aluminum nitride ceramic plate is attached to the metal is 1MPa to 3MPa, the air pressure of a chamber of the vacuum annealing furnace before heating is below 5 x 10 < -4 > Pa, the heating temperature is 370 ℃ to 400 ℃, the heat preservation time is 10min to 15min, and the aluminum nitride ceramic plate and the metal are connected after the temperature of the chamber is lower than 40 ℃ and the loading force is removed.
Further, the cleaning of the aluminum nitride ceramic plate in the step 1 is as follows: soaking in absolute ethyl alcohol, sequentially carrying out ultrasonic treatment in acetone and absolute ethyl alcohol for 10-15 min, drying, and cleaning in a magnetron sputtering chamber by using radio frequency plasma for 20-30 min.
Further, in step 3, the solder layer is a tin-silver based lead-free solder capable of wetting the metal.
Further, in step 4, a copper film is deposited on the surface of the metal substrate by PVD.
Compared with the prior art, the invention has the following technical effects:
the invention overcomes the defects that the connection strength of the aluminum nitride ceramic plate and metal is generally lower, the heat-conducting property is seriously reduced, the process is complex, high-temperature treatment is required, the energy consumption is large and the like. The main body is as follows:
firstly, a titanium film and a silver-tin film are deposited by physical vapor deposition and are heated and connected in a common vacuum annealing furnace, the steps are universal in equipment, mature in process, simple in control condition, strong in process compatibility and free of pollution in the whole process, and the same effect can be achieved on the existing universal magnetron sputtering coating equipment and the vacuum annealing furnace.
And secondly, the titanium layer is used as a transition layer, the substrate is heated at low temperature during deposition, certain metallurgical bonding of the titanium film and the aluminum nitride ceramic plate can be realized without subsequent heat treatment, the bonding strength is improved, and because oxygen is not introduced, the heat-conducting property of the aluminum nitride ceramic plate is not reduced, and the heat-conducting property of the metalized ceramic plate is improved. Meanwhile, the titanium transition layer and the silver-tin solder layer are introduced, so that the thermal expansion mismatching degree of aluminum nitride and copper is reduced, and the cracking condition caused by thermal stress is reduced.
Thirdly, because the silver-tin solder is deposited on the surface of the metallized aluminum nitride ceramic substrate in a magnetron sputtering mode, the size precision of connection is high, the material consumption is controllable, and the overflow phenomenon of the solder after welding is less. Furthermore, other metallic materials than copper, which can be wetted by silver tin, can also be connected.
And copper is plated on the surface of the metal, so that various types of metal can be connected, the solder does not need to be replaced due to metal change, and the process adaptability is high.
Drawings
FIG. 1 is a process flow chart of the method for joining aluminum nitride ceramic plate and metal based on PVD deposition method of the invention.
FIG. 2 is a schematic view showing the structure of the aluminum nitride ceramic plate according to the present invention after bonding with metal:
in the figure: the aluminum nitride ceramic plate comprises an aluminum nitride ceramic plate 1, a titanium coating layer 2, a silver tin coating layer 3, a copper layer 4 and a metal plate 5.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
referring to fig. 1, a method for connecting an aluminum nitride ceramic plate and a metal based on a PVD deposition method includes the following steps:
and 4, attaching the aluminum nitride ceramic plate and the metal plated with the copper film by using a clamping die, heating in a vacuum annealing furnace and preserving heat to complete the connection of the aluminum nitride ceramic plate and the metal.
The cleaning of the aluminum nitride ceramic plate in the step 1 comprises the following steps: soaking in absolute ethyl alcohol, sequentially carrying out ultrasonic treatment in acetone and absolute ethyl alcohol for 10-15 min, drying, and cleaning by using radio frequency plasma in a magnetron sputtering chamber for 20-30 min;
when the titanium film is prepared in the step 2, the background vacuum degree of the magnetron sputtering chamber is 1 multiplied by 10-4～3×10-4Pa, sputtering argon with the purity of 99.99 percent, airflow of 20 sccm-40 sccm, air pressure of 0.3 Pa-0.5 Pa, sputtering the titanium target with the purity of 99.99 percent for 15 min-25 min by adopting the power of a direct current power supply of 120W-150W, then adding negative bias of-50V-100V to the substrate, heating the substrate to 100-400 ℃, depositing 80 nm-120 nm, and then completing the preparation of the titanium transition layer;
and 3, when the silver-tin coating is deposited in the step 3, sputtering gas is argon with the purity of 99.99%, the gas flow is 20-40 sccm, the gas pressure is 0.3-0.5 Pa, the silver-tin target is sputtered for 10min by adopting the power of a direct current power supply of 130-160W, then negative bias voltage (-60) - (-100) V is applied to the substrate, and the silver-tin coating is deposited for 80-100 min to finish the preparation of the silver-tin coating.
And 4, when the aluminum nitride ceramic plate is connected with the metal in the step 4, firstly, polishing the machined copper surface until the surface roughness is less than 2.00 mu m, then depositing a 10 mu m Cu film on the surface of the copper surface by PVD (physical vapor deposition), then, fitting the film coating surface of the aluminum nitride ceramic plate and the metal copper plating surface into a clamping mold, applying the pressure of 1-2 MPa, placing the clamping mold into a vacuum annealing furnace, starting to heat to 370-400 ℃ when the vacuum degree of the furnace chamber is less than 5 x 10 < -4 > Pa, keeping the temperature for 10-15 min, taking out the aluminum nitride ceramic plate after the furnace temperature is less than 40 ℃, removing the loading force, and completing the connection of the aluminum nitride ceramic plate and the metal.
Example 1:
as shown in fig. 1, the method for joining an aluminum nitride ceramic plate and a metal based on the PVD deposition method includes the steps of:
and 2, shielding the aluminum nitride ceramic substrate by using a chamber sample baffle, introducing argon with the purity of 99.99%, flowing 20sccm, adjusting the air pressure in the chamber to be 0.3Pa, performing plasma cleaning on the surface of a titanium target with the purity of 99.99% by adopting the power of a direct current power supply of 130W, cleaning for 15min, then adding base negative bias of-50V, then opening the titanium target baffle sample baffle, starting sputtering deposition, and closing the sample baffle and the titanium target baffle after depositing for 80nm to finish the preparation of the titanium transition layer.
And 3, still keeping the air pressure of the chamber at 0.3Pa, carrying out plasma cleaning on the surface of the silver-tin target by adopting the power of a direct current power supply of 150W, cleaning for 10min, then adding a negative bias voltage of a substrate to-70V, then opening a sample baffle of the titanium target baffle, starting sputtering deposition, stopping sputtering for 20min after 20min every time when the silver-tin is a eutectic material with a low melting point and then sputtering, closing the sample baffle and the titanium target baffle after 80min of deposition, taking out the sample after the temperature of the chamber is reduced to the room temperature, and finishing the aluminum nitride surface coating process.
And 4, cleaning the cut metal in an acetone solution for 10min by using 50Hz ultrasonic waves, cleaning the cut metal in absolute ethyl alcohol for 10min by using 50Hz ultrasonic waves, drying the cut metal by using a blower, polishing the cut metal on sand paper until the surface roughness is less than 2 mu m, depositing a 10 mu m Cu film on the surface of the cut metal by using PVD (physical vapor deposition), attaching the coating surface of the aluminum nitride ceramic plate and the copper plating surface of the metal into a clamping mould, applying 1MPa of pressure to the mould, putting the mould into a vacuum annealing furnace, starting heating when the air pressure in the furnace chamber is less than 5 multiplied by 10 < -4 > Pa, heating to 370 ℃, preserving the temperature for 10min, breaking the vacuum after the temperature of the furnace chamber is less than 40 ℃, taking out a sample, and removing the loading force to complete the connection of the aluminum nitride ceramic plate and the metal.
Example 2:
as shown in fig. 1, the method for joining an aluminum nitride ceramic plate and a metal based on the PVD deposition method includes the steps of:
and 2, shielding the aluminum nitride ceramic substrate by using a chamber sample baffle, introducing argon with the purity of 99.99%, flowing 30sccm, adjusting the air pressure in the chamber to be 0.3Pa, performing plasma cleaning on the surface of a titanium target with the purity of 99.99% by adopting the power of a direct current power supply of 150W, cleaning for 20min, then adding a base negative bias of-70V, then opening the titanium target baffle sample baffle, starting sputtering deposition, and closing the sample baffle and the titanium target baffle after 100nm deposition to finish the preparation of the titanium transition layer.
And 3, still keeping the air pressure of the chamber at 0.3Pa, carrying out plasma cleaning on the surface of the silver-tin target by adopting the power of a direct-current power supply of 150W, cleaning for 10min, then adding a negative bias voltage of a substrate to 80V, then opening a sample baffle of the titanium target baffle, starting sputtering deposition, stopping sputtering for 20min after 20min every time when the silver-tin is a eutectic material with a low melting point and then sputtering, closing the sample baffle and the titanium target baffle after 90min of deposition, taking out the sample after the temperature of the chamber is reduced to the room temperature, and finishing the aluminum nitride surface coating process.
And 4, cleaning the cut metal in an acetone solution for 10min by using 50Hz ultrasonic waves, cleaning the cut metal in absolute ethyl alcohol for 10min by using 50Hz ultrasonic waves, drying the cut metal by using a blower, polishing the cut metal after being polished on abrasive paper until the surface roughness is less than 2 mu m, depositing a 10 mu m Cu film on the surface of the cut metal by using PVD (physical vapor deposition), attaching the coating surface of the aluminum nitride ceramic plate and the copper plating surface of the metal into a clamping mould, applying 2MPa pressure to the mould, then placing the mould into a vacuum annealing furnace, starting heating when the air pressure in the furnace chamber is less than 5 multiplied by 10 < -4 > Pa, heating to 380 ℃, keeping the temperature for 10min, breaking the vacuum after the temperature of the furnace chamber is less than 40 ℃, taking out a sample, and removing the loading force to complete the connection of the aluminum nitride ceramic plate and the.
Example 3:
as shown in fig. 1, the method for joining an aluminum nitride ceramic plate and a metal based on the PVD deposition method includes the steps of:
and 2, shielding the aluminum nitride ceramic substrate by using a chamber sample baffle, introducing argon with the purity of 99.99%, flowing 30sccm, adjusting the air pressure in the chamber to be 0.3Pa, performing plasma cleaning on the surface of a titanium target with the purity of 99.99% by adopting the power of a direct current power supply of 150W, cleaning for 25min, then adding base negative bias of-100V, then opening the titanium target baffle sample baffle, starting sputtering deposition, and closing the sample baffle and the titanium target baffle after depositing for 120nm to finish the preparation of the titanium transition layer.
And 3, still keeping the air pressure of the chamber at 0.3Pa, carrying out plasma cleaning on the surface of the silver-tin target by adopting the power of a direct-current power supply of 160W, cleaning for 10min, then adding a negative bias voltage of a substrate to 80V, then opening a sample baffle of the titanium target baffle, starting sputtering deposition, stopping sputtering for 20min after 20min every time when the silver-tin is a eutectic material with a low melting point and then sputtering for 100min, closing the sample baffle and the titanium target baffle after the deposition, taking out the sample after the temperature of the chamber is reduced to the room temperature, and finishing the aluminum nitride surface coating process.
And 4, cleaning the cut metal in an acetone solution for 10min by using 50Hz ultrasonic waves, cleaning the cut metal in absolute ethyl alcohol for 10min by using 50Hz ultrasonic waves, drying the cut metal by using a blower, polishing the cut metal after being polished on abrasive paper until the surface roughness is less than 2 mu m, depositing a 10 mu m Cu film on the surface of the cut metal by using PVD (physical vapor deposition), attaching the coating surface of the aluminum nitride ceramic plate and the copper plating surface of the metal into a clamping mould, applying 2MPa pressure to the mould, then placing the mould into a vacuum annealing furnace, starting heating after the air pressure in the furnace chamber is less than 5 multiplied by 10 < -4 > Pa, heating to 400 ℃, keeping the temperature for 15min, breaking the vacuum after the temperature of the furnace chamber is less than 40 ℃, taking out a sample, and removing the loading force to complete the connection of the aluminum nitride ceramic plate and the.
Argon with a purity of 99.99% is a mixed gas of 99.999 vol% Ar2, 0.0005 vol% N2, 0.0002 vol% O2, 0.0002 vol% H2O, 0.0001 vol% H2; the titanium target having a purity of 99.99% was a titanium target containing 0.0017 wt% C, 0.0011 wt% Fe, 0.0008 wt% Cu,0.0006 wt% Ni, 99.9958 wt% Ti.
Claims (6)
1. A method for connecting an aluminum nitride ceramic plate and metal based on a PVD (physical vapor deposition) deposition method is characterized by comprising the following steps of:
step 1, cleaning an aluminum nitride ceramic substrate to be used;
step 2, depositing a titanium transition layer on the aluminum nitride ceramic plate by magnetron sputtering;
step 3, depositing a silver-tin solder layer with the thickness of 4-6 microns on the plated titanium transition layer;
step 4, one side of the titanium transition layer and the silver-tin solder layer is attached to the metal plated with the copper film, and the metal is heated and insulated in a vacuum annealing furnace to complete the connection of the aluminum nitride ceramic plate and the metal;
in step 2, when the titanium transition layer is deposited, the background vacuum degree of the magnetron sputtering chamber is 1 multiplied by 10-4Pa～3×10-4Pa, sputtering argon with the purity of 99.99 percent in the sputtering gas, the air pressure of 0.3Pa to 0.5Pa, sputtering the titanium target with the purity of 99.99 percent for 15 to 25min by adopting the power of a direct current power supply of 150W, then adding a substrate negative bias of-50 to-100V, heating the substrate to 100 to 400 ℃, and depositing 80 to 120nm to complete the deposition preparation of the titanium transition layer.
2. The method for connecting an aluminum nitride ceramic plate and a metal based on the PVD deposition method as recited in claim 1, wherein in the step 3, when depositing the silver-tin film solder layer by magnetron sputtering, argon with a purity of 99.99% is introduced, the gas flow is 20sccm to 40sccm, the gas pressure is 0.3Pa to 0.5Pa, the silver-tin target is powered by a direct current power supply of 130W to 160W, the substrate negative bias is-60V to-100V, and the silver-tin solder layer is prepared by depositing for 80min to 100 min.
3. The method according to claim 1, wherein the aluminum nitride ceramic plate is bonded to the metal coated with the copper film by a clamping mold in step 4, the pressure applied by the clamping mold is 1MPa to 3MPa when the aluminum nitride ceramic plate is bonded to the metal, and the pressure in the chamber of the vacuum annealing furnace before heating is 5X 10- 4Heating at 370-400 deg.c below Pa for 10-15 min, taking out the aluminum nitride ceramic plate after the temperature in the cavity is lower than 40 deg.c and eliminating the loading force to complete the connection between the aluminum nitride ceramic plate and the metal.
4. The method for joining an aluminum nitride ceramic plate and a metal according to claim 1, wherein the cleaning of the aluminum nitride ceramic plate in step 1 is: soaking in absolute ethyl alcohol, sequentially carrying out ultrasonic treatment in acetone and absolute ethyl alcohol for 10-15 min, drying, and cleaning in a magnetron sputtering chamber by using radio frequency plasma for 20-30 min.
5. A method for joining an aluminum nitride ceramic plate and a metal according to claim 1, wherein in step 3, the solder layer is a tin-silver based lead-free solder capable of wetting the metal.
6. The method for joining an aluminum nitride ceramic plate and a metal according to claim 1, wherein in step 4, a copper film is deposited on the surface of the metal substrate by PVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810785085.7A CN109136848B (en) | 2018-07-17 | 2018-07-17 | Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810785085.7A CN109136848B (en) | 2018-07-17 | 2018-07-17 | Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109136848A CN109136848A (en) | 2019-01-04 |
| CN109136848B true CN109136848B (en) | 2020-04-28 |
Family
ID=64800880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810785085.7A Active CN109136848B (en) | 2018-07-17 | 2018-07-17 | Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109136848B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111848226B (en) * | 2019-04-24 | 2022-03-25 | 成都大学 | Nano metal layer ceramic substrate and manufacturing method thereof |
| CN110129617B (en) * | 2019-05-30 | 2020-03-31 | 西安交通大学 | Niobium-doped silver-tin film eutectic solder and preparation method thereof |
| CN110642644B (en) * | 2019-09-17 | 2022-04-26 | 昆山市柳鑫电子有限公司 | Aluminum nitride ceramic copper-clad plate and preparation method thereof |
| CN111192831B (en) * | 2020-03-05 | 2022-11-04 | 哈尔滨工业大学（威海） | Metallization method for high-thermal-conductivity silicon nitride ceramic substrate and packaging substrate thereof |
| CN111945124A (en) * | 2020-08-13 | 2020-11-17 | 气相科技(武汉)有限公司 | Preparation method of nonmetal/metal/nonmetal sandwich structure composite material |
| CN112366107B (en) * | 2020-11-11 | 2021-12-10 | 福达合金材料股份有限公司 | Preparation method of silver metal oxide sheet-shaped electrical contact |
| CN113751404A (en) * | 2021-08-26 | 2021-12-07 | 松山湖材料实验室 | Pretreatment mode for improving bonding force of metal and AlN ceramic and treated product |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103334080A (en) * | 2013-06-04 | 2013-10-02 | 上海大学 | Preparation method of metallization layer on surface of AIN film |
| CN103741141A (en) * | 2014-01-24 | 2014-04-23 | 浙江工业大学 | Method for metalizing aluminum nitride ceramic plate |
| CN106892685A (en) * | 2015-12-18 | 2017-06-27 | 北京有色金属研究总院 | A kind of ceramic metallization film and preparation method thereof |
| CN107556060A (en) * | 2017-09-04 | 2018-01-09 | 福建华清电子材料科技有限公司 | The method of al nitride ceramic board metallization |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI364342B (en) * | 2008-12-03 | 2012-05-21 | Univ Nat Taiwan Science Tech | Whisker-free coating structure and method of fabricating the same |
| US20120177945A1 (en) * | 2009-05-22 | 2012-07-12 | National Taiwan University Of Science And Technology | Whisker-Free Coating Structure and Method for Fabricating the Same |
-
2018
- 2018-07-17 CN CN201810785085.7A patent/CN109136848B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103334080A (en) * | 2013-06-04 | 2013-10-02 | 上海大学 | Preparation method of metallization layer on surface of AIN film |
| CN103741141A (en) * | 2014-01-24 | 2014-04-23 | 浙江工业大学 | Method for metalizing aluminum nitride ceramic plate |
| CN106892685A (en) * | 2015-12-18 | 2017-06-27 | 北京有色金属研究总院 | A kind of ceramic metallization film and preparation method thereof |
| CN107556060A (en) * | 2017-09-04 | 2018-01-09 | 福建华清电子材料科技有限公司 | The method of al nitride ceramic board metallization |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109136848A (en) | 2019-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109136848B (en) | Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method | |
| CN109930125B (en) | Magnetron sputtering coating method for diamond-aluminum composite material | |
| CN110438444B (en) | Tungsten-plated diamond particles, tungsten plating method, application of tungsten-plated diamond particles as copper-based reinforcing phase and diamond/copper composite material obtained by tungsten-plated diamond particles | |
| CN108520855B (en) | Method for improving reliability of ceramic copper-clad plate by using nano silver paste | |
| CN103819214B (en) | AlN ceramic bonded copper substrate and preparation method thereof | |
| CN106892685B (en) | Ceramic metallized film and preparation method thereof | |
| CN108715997B (en) | Preparation method of diamond film-copper composite radiating fin | |
| CN102339758A (en) | Method for manufacturing copper-ceramic substrate by adopting low-temperature bonding | |
| CN105330340A (en) | Aluminum oxide ceramic metallization method used for brazing | |
| CN102409299B (en) | Preparation method of oxide ceramic sputtering target | |
| CN106944698A (en) | The SiC ceramic and the direct method for welding of SiC ceramic reinforced aluminum matrix composites ultrasonic cryogenic being modified based on thermal oxide surface | |
| CN114309596B (en) | Preparation method of high-heat-conductivity surface-metallized diamond/copper composite substrate | |
| CN102409300B (en) | Oxide ceramic sputtering target and preparation method thereof and used brazing alloy | |
| CN114478022B (en) | High-reliability aluminum nitride copper-clad ceramic substrate and preparation method thereof | |
| CN115626835A (en) | Manufacturing method of ceramic-based copper-clad plate and product thereof | |
| CN112981164A (en) | Preparation method of diamond reinforced metal matrix composite material with high reliability and high thermal conductivity | |
| CN114685178A (en) | Ceramic plate and metal film connecting method based on PVD (physical vapor deposition) deposition method | |
| CN113174575A (en) | Method for preparing AlN ceramic substrate by metallization and heat sink integration | |
| JP7000347B2 (en) | Heat dissipation parts for semiconductor devices | |
| CN112975032B (en) | Brazing method of silicon carbide ceramic | |
| CN113501725B (en) | Preparation method of aluminum-coated ceramic insulating lining plate | |
| CN105436643A (en) | Direct aluminum or aluminum alloy brazing method for aluminum oxide ceramics | |
| CN115466131A (en) | Method for metallizing surface of aluminum nitride ceramic | |
| CN112059174A (en) | Simple infiltration preparation method of low-expansion-coefficient diamond/metal composite material | |
| CN111848226B (en) | Nano metal layer ceramic substrate and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220601 Address after: 215000 second floor, building 3, Daxin Science Park, No. 8, Changting Road, high tech Zone, Suzhou, Jiangsu Patentee after: Suzhou Bozhi golden Diamond Technology Co.,Ltd. Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University |
|
| TR01 | Transfer of patent right |