CN102409300B - Oxide ceramic sputtering target and preparation method thereof and used brazing alloy - Google Patents
Oxide ceramic sputtering target and preparation method thereof and used brazing alloy Download PDFInfo
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Abstract
An oxide ceramic sputtering target and a preparation method thereof and a used brazing alloy. A ternary brazing alloy which adopts Sn as a main component and contains specific amounts of Zn and In is used as a connecting material for connecting a ceramic target material with a Cu or Cu alloy back plate; an extremely-thin silver transition layer is prefired on a connecting surface of the ceramic target material at a medium temperature; the connection of the ceramic target material with the Cu or Cu alloy back plate is performed; the invention can realize production with low cost and high efficiency, improve the wetability of the brazing alloy, improve the connection performance of the target material and the back plate, and provide a sputtering target which can realize stable sputtering. The method for manufacturing the oxide ceramic sputtering target of the invention effectively realizes the connection of the target material with the back plate, and improves the connecting strength of the target; the shear strength of the connection is up to about 20 MPa; during vacuum sputtering, higher target power density can be borne; and the target power density is up to 8.2 W/cm2.
Description
Technical field
The present invention relates to preparation method and the sputter ceramic target of magnetron sputtering target.Be specifically related to use and contain the brazing alloy of Sn, Zn, In, and the sputtering target that adopts this solder solder alloy preparation, and the preparation method of this sputtering target.
Background technology
At present, magnetron sputtering technique has become the conventional means that the industrialization plated film prepares various function films and device.
Sputter coating is because the splash effect of energetic ion bombardment target, the atom (or atomic group or molecule) of target surface is overflowed after, deposit to suprabasil process.
In sputter procedure, the target load-bearing can ion bombardment absorb energy, and its temperature can raise gradually.Be to reduce the temperature rise of target, usually, target and copper and alloy backboard thereof are linked together, by the temperature rise of cooling backboard with the reduction target.
In the preparation of transparent conductive film, adopt the manufacturability of oxidesintering ceramic target sputter coating more superior than adopting metallic target reactive sputtering plated film.
Target can connect by heat-resisting electroconductive resin glue or low melting point brazing alloy with being connected of copper backboard, and wherein the most commonly used is the method for pure In or Sn-In alloy brazed.Open flat 7-48667 as JP spy.
But, with the method for pure In or Sn-In alloy brazed, have and can't satisfy the transparent conducting glass maximization and require the big area of target, the problem of high thicknessization.The conference of target area because self warpage peel off from backboard; The increase of target thickness makes its thermal resistance become big, under the working condition of big target power output density, produces heat build-up and can make low-melting pure In or Sn-In alloy brazed bonding strength not enough, causes target to peel off.In addition, adopt the content of rare metal In all greater than more than 55%, exist the cost problem of higher.
At the problems referred to above, CN 1880492A proposes to adopt the Sn-Zn alloy to connect target and backboard as solder, and still, this method only is suitable for connecting the target that constitutes with metal or alloy.For ceramic target, because the coordinate bond of stupalith mainly contains two kinds of ionic linkage and covalent linkage, all highly stable, the metal institute that is difficult to be melted is wetting; In addition, the Zn in the Sn-Zn alloy is easy to oxidized, thereby the wettability of alloy is descended.
Wettability requirement when being connected with backboard for improving target can be adopted the method for on the joint face of target sputter or evaporation Cu or Ni-Cu alloy film.But this method is more expensive because of film-forming apparatus, causes the production cost height, and there is the low problem of production efficiency in complex process simultaneously.
Summary of the invention
The objective of the invention is to provide a kind of oxide ceramics sputtering target and preparation method thereof; Another object of the present invention provides the brazing alloy that contains Sn, Zn and In that adopts in the oxide ceramics sputtering target manufacturing processed; The 3rd purpose of the present invention provides a kind of structure of oxide ceramics sputtering target.
The object of the present invention is achieved like this:
A kind of oxide ceramics sputtering target brazing alloy, the brazing alloy that be used for to connect target and Cu or Cu alloy backboard consists of: by weight percentage: Zn 3 ~ 8.5%, and In 4 ~ 8%, and rest part is Sn and the impurity that can't remove.
A kind of oxide ceramics sputtering target is provided with the burning infiltration silver layer in oxide ceramics target one side, and backsheet layer is connected with the oxide ceramics target by brazing alloy layer and burning infiltration silver layer.
Described oxide ceramics target is the oxidesintering ceramic target.
Described oxidesintering ceramic target is selected AZO target or ITO target for use.
A kind of preparation method of oxide ceramics sputtering target may further comprise the steps:
S1: prepare oxide ceramics target, Cu or Cu alloy backboard and the described Sn-Zn-In brazing alloy of claim 1;
S2: the joint face at the oxide ceramics target is coated with conductive silver paste, the burning infiltration silver layer;
S3: the target through pre-burning infiltration silver layer, by with an organic solvent waiting cleaning and degreasing, be heated the above temperature of fusing point of brazing alloy then, coat the brazing alloy of molten state, formation solder layer at its joint face;
Simultaneously, backboard is carried out degreasing too, and be heated to the above temperature of brazing alloy fusing point; And also can on the joint face of backboard, coat the brazing alloy of molten state;
S4: target and backboard are carried out soldering, and with the joint face relative combination of target with backboard, exerting pressure makes it welding;
S5: the cooling sputter target assemblies, sputtering target is cleared up, finish the preparation of oxide ceramics sputtering target.
In the S2 step, temperature control is at 500-550 ℃ during the burning infiltration silver layer.
In the S3 step, through the target of pre-burning infiltration silver layer, coat the brazing alloy of molten state at its joint face, form solder layer; And on the joint face of backboard, what adopt when coating the brazing alloy of molten state is dip coating or spread coating.
The articulamentum thickness that burning infiltration silver layer and solder layer constitute is between 0.1-2mm, between the preferred 0.1-1mm.
Adopt pressure between 0.001-0.1MPa when target and backboard apply welding in step S4.
The gauge control of the pre-burning infiltration silver layer of the joint face of ceramic target is in 50 ~ 200 μ m.
Oxide ceramics sputtering target provided by the invention, to be that the three component system brazing alloy of the Zn that contains certain content of main component and In is as being connected the be connected material of ceramic target with Cu or Cu alloy backboard with Sn, the pre-burning infiltration silver-colored transition layer as thin as a wafer of temperature in the ceramic target joint face, the enforcement ceramic target is connected with Cu or Cu alloy backboard, can low-cost, high efficiency production, improve solder wetting, improve the switching performance of target and copper backboard, realize stablizing the sputtering target of sputter.The method of manufacturing oxide ceramics sputtering target of the present invention has realized being connected of target and backboard effectively, has improved the strength of joint of target, and the slip resistance of connection reaches about 20MPa.When carrying out vacuum sputtering, can bear bigger target power output density target power output density and can reach 8.2W/cm
2
Description of drawings
The invention will be further described below in conjunction with drawings and Examples.
Fig. 1 is the technological temperature graphic representation of the pre-burning infiltration silver layer of target of the present invention.
Fig. 2 is the embodiment schema of the method for welding of target of the present invention and backboard.
Fig. 3 to Fig. 4 target of the present invention and backboard carry out the enforcement synoptic diagram of soldering.
Fig. 5 is the target material structure figure that the present invention obtains.
Embodiment
One, oxide ceramics sputtering target brazing alloy:
Brazing alloy of the present invention is the material that is connected that be used for to connect target and Cu or Cu alloy backboard when sputtering target is made, and by percentage to the quality: Zn content is that 3 ~ 8.5%, In content is 4 ~ 8%, and rest part is Sn and the impurity that can't remove.The described impurity that can't remove refers in the alloy contained that can't remove, trace, other element except Zn, In, Sn.Be that brazing alloy of the present invention is actually with Sn, Zn and In formation.
The Zn amount that contains in this brazing alloy is at the hypoeutectic composition range of Sn-Zn alloy, the fusing point of scolder is suitably raise (the Sn-Zn eutectic melting point is 199 ℃), and can reduce the reaction of the Cu among the Sn and backboard in the welding alloy, significantly reduce the corrosion of Cu or Cu alloy backboard.Zn content in this welding alloy will make the fusing point rising of alloy bigger if surpass above-mentioned lower value, be unfavorable for the manufacturability of soldering; On the other hand, Zn content in this welding alloy then generates the oxide compound of Zn easily if surpass above-mentioned higher limit, and brazing manufacturability descends, and influences the bonding strength of target.
The In amount that contains in this brazing alloy is at above-mentioned specified range, thus the fusing point of reduction scolder that can be suitable, the wettability of increase scolder, the bonding strength of raising sputtering target.In content in this welding alloy is not remarkable to the increase of the wettability of alloy if surpass above-mentioned lower value, and the sputtering target bonding strength improves not obvious; On the other hand, In content in this welding alloy then can make the fusing point decline of scolder excessive if surpass above-mentioned higher limit, and the solid solubility of Zn in the Sn base reduced, and generates the oxide compound of Zn easily, and brazing manufacturability descends, and influences the bonding strength of target.
The fusing point of above-mentioned brazing alloy is preferably 200 ~ 220 ℃.When alloy melting point surpasses 220 ℃, the oxidation of brazing alloy and backboard aggravation, the manufacturability of soldering descends, and the bonding strength of sputtering target has the danger of reduction, thereby can influence production efficiency and yield rate.
When brazing alloy of the present invention is manufactured the above-mentioned content of mentioned component, can use means such as existing method is measured, added, stirring, mixing, heating, fusion, cooling to obtain, its manufacture method is not had particular restriction.
Two, the method for burning infiltration silver layer:
At the pre-burning infiltration silver layer of the joint face of ceramic target, make target joint face pre-metallization among the present invention, increase brazing alloy to the wettability of target joint face, can improve the bonding strength of sputtering target.
Among the present invention at the pre-burning infiltration silver layer of the joint face of ceramic target, warm conductive silver paste in the employing, the burning infiltration temperature is controlled at 500-550 ℃, avoids too high temperature to make the interior tissue of target sintered compact and composition profiles that disadvantageous transformation take place.
Joint face at ceramic target among the present invention is coated with conductive silver paste, can adopt methods such as known brushing, dipping, silk screen printing, treat that silver slurry dries after, carry out silver ink firing, the strict control of silver ink firing technological temperature as shown in Figure 1.
Thickness at the pre-burning infiltration silver layer of the joint face of ceramic target among the present invention is preferentially controlled in 50 ~ 200 μ m.The joint face silver thickness is if surpass above-mentioned upper lower limit value, and the bonding strength of sputtering target has the danger of reduction.
Three, the manufacture method of sputtering target:
Sputtering target of the present invention is to adopt usual method, by the formed solder articulamentum of brazing alloy of the present invention, connects the ceramic target of pre-burning silver layer and Cu or Cu alloy backboard and obtains.
In the case, spendable target is preferentially adopted the oxide ceramics target, for example: AZO, ITO etc.Material to spendable backboard preferentially adopts the high Cu of thermal conductivity or Cu alloy.
And self shape of these targets and backboard there is no particular restriction, as long as its joint face is substantial parallel.Be to improve the bonding strength of sputtering target, can be as required the joint face of target and backboard be carried out roughening treatment.
Target through pre-burning infiltration silver layer, by with an organic solvent waiting cleaning and degreasing, be heated the above temperature of fusing point of brazing alloy then, coat the brazing alloy of molten state at its joint face with dip coating, spread coating, form solder layer, simultaneously, backboard is carried out degreasing too, and be heated to the above temperature of brazing alloy fusing point.Then, again with the joint face relative combination of target with backboard, exerting pressure makes it welding, makes sputtering target.During pressurization, to the no particular restriction of pressure size, be generally 0.001 ~ 0.1MPa and get final product.If need, before implementing welding, also available dip coating, spread coating are coated the brazing alloy of molten state to the backboard joint face.
The solder articulamentum of the sputtering target that obtains as mentioned above considers to reduce internal stress, improves bonding strength, and its thickness should be preferably 0.1 ~ 1mm usually below 2mm.
Below in conjunction with accompanying drawing concrete implementation step of the present invention is done necessary explanation.
With reference to figure 2, the manufacturing of a kind of sputtering target of the invention process comprises the steps:
Step S1 provides oxide ceramics target, Cu or Cu alloy backboard and Sn-Zn-In brazing alloy.As shown in Figure 3, self shape of target and backboard there is no particular restriction, as long as its joint face is substantial parallel.Spendable target is preferentially adopted the oxide ceramics target, for example: AZO, ITO etc.Material to spendable backboard preferentially adopts the high Cu of thermal conductivity or Cu alloy.
Step S2, the joint face of oxide ceramics target is coated with conductive silver paste, and middle temperature 500-550 ℃, the burning infiltration silver layer, as shown in Figure 4.
Step S3, the target through pre-burning infiltration silver layer by with an organic solvent waiting cleaning and degreasing, is heated the above temperature of fusing point of brazing alloy then, coats the brazing alloy of molten state, formation solder layer with dip coating, spread coating at its joint face; Simultaneously, backboard is carried out degreasing too, and be heated to the above temperature of brazing alloy fusing point; And also can on the joint face of backboard, adopt aforesaid method to coat the brazing alloy of molten state.
Step S4 carries out soldering to target and backboard, and with the joint face relative combination of target with backboard, exerting pressure makes it welding, as shown in Figure 5.
Step S5, the cooling sputter target assemblies is cleared up sputtering target.
Below will carry out more specific description according to the present invention of embodiment, but the present invention is not limited to following embodiment.
Embodiment one
Be of a size of the AZO ceramic target of 120mm * 100mm * 10mm, the target relative density is 99%, to the 100# sand papering of target joint face, carries out cleaning and degreasing, oven dry again.Then, brush conductive silver paste at the target joint face, oven dry back 550 ℃ of burning infiltration silver layers in the burning infiltration stove, burning infiltration technology such as Fig. 1, silver thickness is controlled about 100 μ m.
Then, after the target of these pre-burning infiltration silver layers cleared up, heat at hot-plate, remain on 260 ℃.Cu or Cu alloy backboard heat equally and remain on 260 ℃.
With raw material Sn(purity 99.99%), Zn(purity 99.99%), In(purity 99.99%) modulated Sn-Zn-In ternary brazing alloy, brazing alloy be wherein Sn, Zn and In with the score alloy composition thing of other Sn:87.5, Zn:6.5, In:6 of quality percentage.
With the brazing alloy heating and melting, adopt spread coating to be coated on equably on the target joint face.At backboard the nickel wire of diameter 0.5mm is set, again target is combined with backboard, make solder layer thickness adjust to 0.5mm.It is naturally cooled to room temperature and obtains target.
The target that obtains like this is arranged in the vacuum sputtering device, is vacuumizing the back and under the situation of input argon gas or oxygen, strengthening sputtering power, target power output density is at 8.2W/cm
2Condition under, carried out sputter 30 minutes, do not find situations such as this sputtering target ftractures, peels off.
Adopt above-mentioned processing method preparation to press and cut sample, carry out shearing test, record the slip resistance average out to 20.5MPa of connection.
Embodiment two
Be of a size of the AZO ceramic target of 120mm * 100mm * 10mm, the target relative density is 95%, to the 100# sand papering of target joint face, carries out cleaning and degreasing, oven dry again.Then, brush conductive silver paste at the target joint face, oven dry back 540 ℃ of burning infiltration silver layers in the burning infiltration stove, burning infiltration technology such as Fig. 1, silver thickness is controlled about 150 μ m.
Then, after the target of these pre-burning infiltration silver layers cleared up, heat at hot-plate, remain on 260 ℃.Cu or Cu alloy backboard heat equally and remain on 260 ℃.
With raw material Sn(purity 99.99%), Zn(purity 99.99%), In(purity 99.99%) modulated Sn-Zn-In ternary brazing alloy, brazing alloy be wherein Sn, Zn and In with the score alloy composite of other Sn:87, Zn:6, In:7 of quality percentage.
With the brazing alloy heating and melting, adopt spread coating to be coated on equably on the target joint face.At backboard the nickel wire of diameter 0.5mm is set, again target is combined with backboard, make solder layer thickness adjust to 0.5mm.It is naturally cooled to room temperature and obtains target.
The target that obtains like this is arranged in the vacuum sputtering device, is vacuumizing the back and under the situation of input argon gas or oxygen, strengthening sputtering power, target power output density is at 8.2W/cm
2Condition under, situations such as this sputtering target ftractures, peels off are not found in sputter 30 minutes.
Adopt above-mentioned processing method preparation to press and cut sample, carry out shearing test, record the slip resistance average out to 20.0MPa of connection.
Embodiment three
Be of a size of the AZO ceramic target of 120mm * 100mm * 10mm, the target relative density is 99%, to the 300# sand papering of target joint face, carries out cleaning and degreasing, oven dry again.Then, silk screen printing conductive silver paste on the target joint face, oven dry back 530 ℃ of burning infiltration silver layers in the burning infiltration stove, burning infiltration technology such as Fig. 1, silver thickness is controlled about 60 μ m.
Then, after the target of these pre-burning infiltration silver layers cleared up, heat at hot-plate, remain on 260 ℃.Cu or Cu alloy backboard heat equally and remain on 260 ℃.
With raw material Sn(purity 99.99%), Zn(purity 99.99%), In(purity 99.99%) modulated Sn-Zn-In ternary brazing alloy, brazing alloy be wherein Sn, Zn and In with the score alloy composition thing of other Sn:87.5, Zn:4.5, In:8 of quality percentage.
With the brazing alloy heating and melting, adopt the method for coating to be coated on equably on the target joint face.At backboard the nickel wire of diameter 0.5mm is set, again target is combined with backboard, make solder layer thickness adjust to 0.5mm.It is naturally cooled to room temperature and obtains target.
The target that obtains like this is arranged in the vacuum sputtering device, is vacuumizing the back and under the situation of input argon gas or oxygen, strengthening sputtering power, target power output density is at 8.2W/cm
2Condition under, carried out sputter 30 minutes, do not find situations such as this sputtering target ftractures, peels off.
Adopt above-mentioned processing method preparation to press and cut sample, carry out shearing test, record the slip resistance average out to 20.3MPa of connection.
Embodiment four
Be of a size of the AZO ceramic target of 120mm * 100mm * 10mm, the target relative density is 95%, to the 100# sand papering of target joint face, carries out cleaning and degreasing, oven dry again.Then, brush conductive silver paste at the target joint face, oven dry back 500 ℃ of burning infiltration silver layers in the burning infiltration stove, burning infiltration technology such as Fig. 1, silver thickness is controlled about 100 μ m.
Then, after the target of these pre-burning infiltration silver layers cleared up, heat at hot-plate, remain on 260 ℃.Cu or Cu alloy backboard heat equally and remain on 260 ℃.
With raw material Sn(purity 99.99%), Zn(purity 99.99%), In(purity 99.99%) modulated Sn-Zn-In ternary brazing alloy, brazing alloy be wherein Sn, Zn and In with quality percentage score other Sn:88, Zn:8.5, In:4.
With the brazing alloy heating and melting, adopt spread coating to be coated on equably on the target joint face.At backboard the nickel wire of diameter 0.5mm is set, again target is combined with backboard, make solder layer thickness adjust to 0.5mm.It is naturally cooled to room temperature and obtains target.
The target that obtains like this is arranged in the vacuum sputtering device, is vacuumizing the back and under the situation of input argon gas or oxygen, strengthening sputtering power, target power output density is at 8.2W/cm
2Condition under, carried out sputter 30 minutes, do not find situations such as this sputtering target ftractures, peels off.
Adopt above-mentioned processing method preparation to press and cut sample, carry out shearing test, record the slip resistance average out to 19.8MPa of connection.
Embodiment five
Be of a size of the ITO ceramic target of 120mm * 100mm * 10mm, the target relative density is 99%, to the 200# sand papering of target joint face, carries out cleaning and degreasing, oven dry again.Then, brush conductive silver paste at the target joint face, oven dry back 520 ℃ of burning infiltration silver layers in the burning infiltration stove, burning infiltration technology such as Fig. 1, silver thickness is controlled about 100 μ m.
Then, after the target of these pre-burning infiltration silver layers cleared up, heat at hot-plate, remain on 260 ℃.Cu or Cu alloy backboard heat equally and remain on 260 ℃.
With raw material Sn(purity 99.99%), Zn(purity 99.99%), In(purity 99.99%) modulated Sn-Zn-In ternary brazing alloy, brazing alloy be wherein Sn, Zn and In with the score alloy composition thing of other Sn:88, Zn:6, In:6 of quality percentage.
With the brazing alloy heating and melting, adopt the method for coating to be coated on equably on the target joint face.At backboard the nickel wire of diameter 0.5mm is set, again target is combined with backboard, make solder layer thickness adjust to 0.5mm.After placing the pressurization of 3kg scheelite on it, it is naturally cooled to room temperature and obtains target.
The target that obtains like this is arranged in the vacuum sputtering device, is vacuumizing the back and under the situation of input argon gas or oxygen, strengthening sputtering power, target power output density is at 8.2W/cm
2Condition under, carried out sputter 30 minutes, do not find situations such as this sputtering target ftractures, peels off.
Adopt above-mentioned processing method preparation to press and cut sample, carry out shearing test, record the slip resistance average out to 20.5MPa of connection.
Comparative example one
Be of a size of the AZO ceramic target of 120mm * 100mm * 10mm, the target relative density is 95%, to the 100# sand papering of target joint face, carries out cleaning and degreasing, oven dry again.Then, brush conductive silver paste at the target joint face, oven dry back 540 ℃ of burning infiltration silver layers in the burning infiltration stove, burning infiltration technology such as Fig. 1, silver thickness is controlled about 100 μ m.
Then, after the target of these pre-burning infiltration silver layers cleared up, heat at hot-plate, remain on 190 ℃.Cu or Cu alloy backboard heat equally and remain on 190 ℃.
With raw material Sn(purity 99.99%), In(purity 99.99%) modulated Sn-In binary brazing alloy, brazing alloy is that the mass ratio of wherein Sn/In is 45/55 alloy composition thing.
With the brazing alloy heating and melting, adopt spread coating to be coated on equably on the target joint face.At backboard the nickel wire of diameter 0.5mm is set, again target is combined with backboard, make solder layer thickness adjust to 0.5mm.It is naturally cooled to room temperature and obtains target.
The target that obtains like this is arranged in the vacuum sputtering device, is vacuumizing the back and under the situation of input argon gas or oxygen, strengthening sputtering power, maximum target power output density is at 4.2W/cm
2Condition under, situations such as peeling off appears in this sputtering target are found in sputter 30 minutes.
Adopt above-mentioned processing method preparation to press and cut sample, carry out shearing test, record the slip resistance average out to 9.8MPa of connection.
Though the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
The method of manufacturing oxide ceramics sputtering target of the present invention has realized being connected of target and backboard effectively, has improved the strength of joint of target.When carrying out vacuum sputtering, can bear bigger target power output density.
Four, resulting oxide ceramics sputtering target
Be provided with burning infiltration silver layer 11 in oxide ceramics target 10 1 sides, backsheet layer 20 is connected with oxide ceramics target 10 by brazing alloy layer 30 and burning infiltration silver layer 11.
Though the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
The method of manufacturing oxide ceramics sputtering target of the present invention has realized being connected of target and backboard effectively, has improved the strength of joint of target.When carrying out vacuum sputtering, can bear bigger target power output density.
Claims (9)
1. the preparation method of an oxide ceramics sputtering target is characterized in that: may further comprise the steps:
S1: prepare oxide ceramics target, Cu or Cu alloy backboard and brazing alloy;
S2: the joint face at the oxide ceramics target is coated with conductive silver paste, the burning infiltration silver layer;
S3: through the target of pre-burning infiltration silver layer, by cleaning and degreasing with an organic solvent, be heated the above temperature of fusing point of described brazing alloy then, coat the described brazing alloy of molten state at its joint face, form solder layer;
Simultaneously, backboard is carried out degreasing too, and be heated to the above temperature of described brazing alloy fusing point; Or on the joint face of backboard, coat the described brazing alloy of molten state;
S4: target and backboard are carried out soldering, and with the joint face relative combination of target with backboard, exerting pressure makes it welding;
S5: the cooling sputter target assemblies, sputtering target is cleared up, finish the preparation of oxide ceramics sputtering target;
Described brazing alloy is by weight percentage: Zn 3 ~ 8.5%, and In 4 ~ 8%, and rest part is Sn and the impurity that can't remove.
2. the preparation method of oxide ceramics sputtering target according to claim 1 is characterized in that: in the S2 step, temperature control is at 500-550 ℃ during the burning infiltration silver layer.
3. the preparation method of oxide ceramics sputtering target according to claim 1 is characterized in that: in the S3 step, through the target of pre-burning infiltration silver layer, coat the brazing alloy of molten state at its joint face, form solder layer; On the joint face of backboard, what adopt when coating the brazing alloy of molten state is dip coating or spread coating.
4. the preparation method of oxide ceramics sputtering target according to claim 1, it is characterized in that: the articulamentum thickness that burning infiltration silver layer and solder layer constitute is between 0.1-2mm.
5. the preparation method of oxide ceramics sputtering target according to claim 1 is characterized in that: adopt pressure between 0.001-0.1MPa when target and backboard apply welding in step S4.
6. the preparation method of oxide ceramics sputtering target according to claim 1, it is characterized in that: the gauge control of the pre-burning infiltration silver layer of the joint face of oxide ceramics target is at 50 ~ 200 μ m.
7. the preparation method of oxide ceramics sputtering target according to claim 1, it is characterized in that: resulting oxide ceramics target (10) one sides are provided with burning infiltration silver layer (11), and backsheet layer (20) is connected with oxide ceramics target (10) by brazing alloy layer (30) and burning infiltration silver layer (11).
8. the preparation method of oxide ceramics sputtering target according to claim 7 is characterized in that, it is characterized in that: described oxide ceramics target is the oxidesintering ceramic target.
9. the preparation method of oxide ceramics sputtering target according to claim 8, it is characterized in that: described oxidesintering ceramic target is selected AZO target or ITO target for use.
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| CN105436649B (en) * | 2014-08-27 | 2018-08-10 | 宁波江丰电子材料股份有限公司 | The production method of welding fixture and target material assembly |
| TWI612025B (en) * | 2015-09-23 | 2018-01-21 | 住華科技股份有限公司 | Solder for fabricating sputtering target and applying method thereof |
| CN107225336B (en) * | 2017-07-18 | 2019-07-30 | 中国工程物理研究院流体物理研究所 | A kind of welding method of ferrite and metal |
| JP2022038434A (en) * | 2020-08-26 | 2022-03-10 | 三菱マテリアル株式会社 | Sputtering target |
| CN113416913B (en) * | 2021-07-02 | 2023-05-09 | 河南东微电子材料有限公司 | Preparation method of alumina coating of magnesium oxide target backboard |
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| JPH07227690A (en) * | 1994-02-21 | 1995-08-29 | Asahi Glass Co Ltd | Solder alloy and target structural body |
| KR100785208B1 (en) * | 2005-06-15 | 2007-12-11 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Solder Alloy for Manufacturing Sputtering Target and Sputtering Target Using the same |
| CN101879640B (en) * | 2009-05-06 | 2012-07-25 | 光洋应用材料科技股份有限公司 | Ceramic sputtering target assembly and seaming method thereof |
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