CN112192085A - Composite solder preformed sheet and preparation method and packaging method thereof - Google Patents
Composite solder preformed sheet and preparation method and packaging method thereof Download PDFInfo
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- CN112192085A CN112192085A CN202011097281.9A CN202011097281A CN112192085A CN 112192085 A CN112192085 A CN 112192085A CN 202011097281 A CN202011097281 A CN 202011097281A CN 112192085 A CN112192085 A CN 112192085A
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 106
- 239000002131 composite material Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 98
- 229910052709 silver Inorganic materials 0.000 claims abstract description 87
- 239000004332 silver Substances 0.000 claims abstract description 87
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 12
- 238000007731 hot pressing Methods 0.000 claims description 12
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 10
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 238000010288 cold spraying Methods 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000003466 welding Methods 0.000 abstract description 19
- 229910000765 intermetallic Inorganic materials 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 9
- 230000032683 aging Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910017692 Ag3Sn Inorganic materials 0.000 description 1
- 229910018082 Cu3Sn Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/40—Making wire or rods for soldering or welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The invention provides a composite solder preformed sheet, a preparation method and a packaging method thereof. By adopting the technical scheme of the invention, the composite solder preformed sheet can effectively improve the compatibility of the interface of the sintered silver and the heterogeneous substrate, realize the connection of the sintered silver solder and different metal substrates or ceramic substrates, and can generate an intermetallic compound or glassy barrier layer through the interface, inhibit the diffusion of substrate elements, enhance the reliability of a sintered welding spot, improve the interface connection performance of the sintered silver material and different metal or ceramic interfaces, and realize the rapid preparation of a low-temperature interconnection high-temperature service welding spot.
Description
Technical Field
The invention belongs to the technical field of electronic materials, and particularly relates to a composite solder preformed sheet, a preparation method and a packaging method thereof.
Background
At present, power semiconductor devices are widely applied to the field of power electronics, and can realize functions of electric energy conversion, signal control and the like of power equipment. Because the power semiconductor chip is in service and needs to work under high frequency and high current density, the power semiconductor chip can generate a large amount of heat. In order to ensure reliable operation of the chip, heat dissipation by means of highly heat-dissipating connecting materials is required. In addition, in order to reduce thermal stress after soldering and improve device reliability, low temperature connection is also one of the requirements of chip packaging.
Nano silver solder, such as nano silver paste and nano silver film, is currently the most promising interconnect material for power semiconductor chips. The nano silver can be sintered at a lower temperature due to the higher surface energy of the nano silver to form a welding spot structure, and has excellent heat conduction and electrical conductivity and mechanical strength. However, due to the influence of the sintering mechanism, the surface of the substrate material often needs to be plated with silver to ensure the bonding performance of the sintered solder joint. For aluminum substrates such as ceramic substrates, the problem of interface oxidation and poor bonding force exists in nano-silver sintering. For the substrate with the metalized surfaces of copper and gold, the problems of high interface diffusion rate and interface performance degradation exist in the nano-silver sintering. Therefore, it is necessary to develop a new sintering interconnection material, which improves the compatibility between the sintering material and the interface of the heterogeneous substrate, and improves the reliability of the interconnection pad and the process compatibility of the sintering material.
Disclosure of Invention
Aiming at the technical problems, the invention discloses a composite solder preformed sheet, a preparation method and a packaging method thereof, which can improve the compatibility of sintered silver and a heterogeneous substrate interface and improve the reliability of a sintered welding spot.
In contrast, the technical scheme adopted by the invention is as follows:
the composite solder preform sheet comprises a substrate, wherein the substrate is a presintered silver film, one or two surfaces of the substrate are provided with solder layers, and the solder of the solder layers is low-temperature tin-based solder or high-temperature glass frit. For gold, silver, copper or nickel surface metalized substrates, tin-based solders are selected, and for aluminum substrates or ceramic substrates, glass frit solders are selected.
By adopting the technical scheme, the compatibility of the sintered silver and the interface of the heterogeneous substrate is effectively improved by arranging the solder layer, and in the welding process, an intermetallic compound or a glassy barrier layer is generated on the interface, so that the diffusion of substrate elements is inhibited, and the reliability of the sintered welding spot is enhanced.
As a further improvement of the invention, the thickness of the pre-sintered silver film is 20-200 μm, the silver content is more than 95%, and the porosity is 50-90%.
As a further improvement of the present invention, the solder layer is formed on the surface of the substrate by cold spraying, vapor deposition, or sputtering.
As a further improvement of the invention, the thickness of the solder layer is 5 μm to 50 μm.
As a further improvement of the invention, the low-temperature tin-based solder is tin, tin-silver-copper solder, tin-silver solder, tin-copper solder or tin-zinc solder.
As a further improvement of the invention, the high temperature frit comprises V2O5、ZrO2One or a mixture of more of ZnO, BaO and BiO.
The invention also discloses a preparation method of the composite solder preformed sheet, which is characterized by comprising the following steps:
step S1, preparing silver paste;
step S2, heating the silver paste to obtain a pre-sintered silver film;
step S3, a solder layer is prepared on the silver thin film.
As a further improvement of the invention, the silver paste comprises silver particles and an organic carrier, and the solid content in the silver paste is 50-80 wt%; the silver particles comprise at least one of flake silver, spherical silver, rod silver and wire-bound silver. Further, the silver particles include plate-like silver powder having a larger specific surface energy and a larger sintering driving force. Furthermore, the solid content of the silver paste is 60wt%, so that the printing property and the flatness can be better ensured.
As a further improvement of the invention, in step S2, the pre-sintered silver film is prepared by baking silver paste at a low temperature of 150-200 ℃. Further, the baking temperature was 180 ℃. The low temperature can lead to poor strength after film forming, which is not beneficial to the preparation of subsequent solder layers, and the high temperature can lead to poor sintering driving force of the silver film, so that sintering interconnection can not be carried out.
As a further improvement of the present invention, in step S3, a solder layer is deposited on the silver thin film by cold spraying, evaporation or sputtering. According to different use purposes, single-sided or double-sided deposition can be carried out; the solder is tin-based solder or glass frit. The tin-based solder is selected for a gold, silver, copper or nickel surface metalized substrate, and the glass frit solder is selected for an aluminum substrate or a ceramic substrate.
The invention also discloses a packaging method, which comprises the following steps:
step S10, placing the composite solder preformed sheet on the surface of the lower substrate; the composite solder preform sheet is the composite solder preform sheet as described in any one of the above; for a gold, silver, copper or nickel surface metallization substrate, adopting a composite solder preformed sheet with a solder layer of low-temperature tin-based solder; for an aluminum substrate or a ceramic substrate, a composite solder preformed sheet with a solder layer made of glass material solder is adopted;
step S20, surface-mounting the chip on the composite solder preformed sheet in a hot-pressing and surface-mounting manner to form a stacked structure;
step S30, performing hot-press sintering on the stacked structure.
As a further improvement of the invention, in step S20, the temperature of the hot-pressed patch is 100-150 ℃, the pressure is 0.1-2MPa, and the time is 10-30S; further preferably, the temperature of the hot-pressed patch is 120 ℃, the pressure is 1MPa, and the time is 20 s.
As a further improvement of the invention, in step S30, the temperature of the hot-pressing sintering is 230-300 ℃, the pressure is 1-20MPa, and the time is 1-10 min. Furthermore, the temperature of hot-pressing sintering is 250 ℃, the pressure is 10MPa, and the time is 10min for preparing the preformed sheet of the tin-based solder layer. And for the pre-formed sheet for preparing the glass material solder layer, the hot-pressing sintering process is carried out at the temperature of 350 ℃, the pressure of 20MPa and the time of 10 min.
As a further improvement of the present invention, the lower substrate may be a metal, such as: copper substrates, aluminum substrates, or substrates with metallized surfaces, including but not limited to nickel, nickel gold, nickel silver, nickel palladium gold, etc.; ceramic substrates such as alumina, aluminum nitride, silicon nitride, and the like.
Compared with the prior art, the invention has the beneficial effects that:
firstly, by adopting the technical scheme of the invention, the composite solder preformed sheet can effectively improve the compatibility of the interface of the sintered silver and the heterogeneous substrate, realize the connection of the sintered silver solder and different metal substrates or ceramic substrates, and can generate an intermetallic compound or glassy state barrier layer through the interface, inhibit the diffusion of substrate elements, enhance the reliability of a sintered solder joint, improve the interface connection performance of the sintered silver material and different metal or ceramic interfaces, and realize the rapid preparation of a low-temperature interconnection high-temperature service solder joint.
Secondly, the technical scheme of the invention provides the packaging process of the composite solder preformed sheet, which avoids the complex steps of printing, substrate surface metallization and the like in the traditional silver paste application process, simplifies the silver sintering process and improves the process compatibility.
Detailed Description
Preferred embodiments of the present invention are described in further detail below.
Example 1
A composite solder preform sheet is prepared by the following steps:
(1) obtaining a silver paste by mixing silver flakes of micron size with an organic vehicle, wherein the silver solids content is 60 wt%; and printing the silver paste, and baking at 180 ℃ to obtain a pre-sintered silver film, wherein the thickness of the silver film is 80 microns.
(2) And depositing the tin-silver-copper solder on one surface of the silver film by using a cold spraying method, wherein the deposition thickness is 20 mu m, and thus obtaining the composite solder preformed sheet.
The prepared composite solder preform is adopted to carry out a packaging test, and the method comprises the following steps:
(1) and placing the composite solder preform on a copper substrate, wherein one side of the deposited tin-silver-copper solder is in contact with a copper interface, and attaching the chip surface to the preform at the temperature of 120 ℃, the pressure of 1MPa and the time of 30 s.
(2) And carrying out hot-pressing sintering on the stacked structure of the chip, the preformed sheet and the substrate, wherein the sintering temperature is 250 ℃, the pressure is 10MPa, and the time is 10 min.
Ultrasonic scanning is carried out on the sintered product, no interface peeling is found, and the interface welding rate is measured to be 99.5%; through an X-ray test, the porosity of the welding spot is 0.8%, and almost no obvious defect exists; the shear strength of the packaging structure is 80MPa, and the shear strength of 62MPa can be still maintained after aging for 500h at 250 ℃, because the tin-silver-copper solder at the interface is melted and the interface bonding force of sintered silver is enhanced, and meanwhile, a continuous intermetallic compound barrier layer of Cu3Sn and Ag3Sn is generated, so that the diffusion of copper and oxygen are effectively inhibited in the aging process, and the high-temperature reliability of a welding spot is ensured.
Example 2
A composite solder preform sheet is prepared by the following steps:
(1) obtaining a silver paste by mixing a spherical silver powder and an organic vehicle, wherein the silver solid content is 70 wt%; and printing the silver paste, and baking at 150 ℃ to obtain a pre-sintered silver film, wherein the thickness of the silver film is 100 mu m.
(2) And depositing the tin-silver-copper solder on one surface of the silver film by using a cold spraying method, wherein the deposition thickness is 10 mu m, and thus obtaining the composite solder preformed sheet.
The prepared composite solder preform is adopted to carry out a packaging test, and the method comprises the following steps:
(1) and placing the composite solder preformed sheet on a nickel substrate, wherein one side of the tin-silver-copper solder deposited is in contact with a nickel interface, and attaching the surface of the chip to the preformed sheet at the temperature of 100 ℃, the pressure of 2MPa and the time of 20 s.
(2) And carrying out hot-pressing sintering on the chip, the preformed sheet and the substrate stacking structure, wherein the sintering temperature is 230 ℃, the pressure is 20MPa, and the time is 5 min.
Ultrasonic scanning is carried out on the sintered product, no interface peeling is found, and the interface welding rate is measured to be 98.4%; through an X-ray test, the porosity of the welding spot is 1.5%, and almost no obvious defect exists; the shear strength of the packaging structure is 54MPa, and after aging at 250 ℃ for 500h, the shear strength of 48MPa can still be maintained, because the tin-silver-copper brazing filler metal at the interface reacts with nickel to generate a nickel-tin intermetallic compound, the bonding force is enhanced, and the intermetallic compound barrier layer effectively avoids the oxidation of nickel in the aging process, so that the high-temperature reliability of a welding spot is ensured.
Example 3
A composite solder preform sheet is prepared by the following steps:
(1) obtaining a silver paste by mixing a flake silver powder and an organic vehicle, wherein the silver solid content is 50 wt%; and printing the silver paste, and baking at 200 ℃ to obtain a pre-sintered silver film, wherein the thickness of the silver film is 200 mu m.
(2) Performing glass material deposition on one side of the silver film by using a cold spraying method, wherein the glass material is ZnO, BaO or Bi2O3，B2O3And (3) melting at high temperature, quenching to form glassy state powder, and depositing to a thickness of 50 mu m to obtain the composite solder preformed sheet.
The prepared composite solder preform is adopted to carry out a packaging test, and the method comprises the following steps:
(1) and placing the composite solder preformed sheet on an alumina substrate, wherein one side of the deposited glass material is in contact with an alumina interface, and attaching the surface of the chip to the preformed sheet at the temperature of 150 ℃ and under the pressure of 0.1MPa for 10 s.
(2) And carrying out hot-pressing sintering on the chip, the preformed sheet and the substrate stacking structure, wherein the sintering temperature is 380 ℃, the pressure is 20MPa, and the time is 10 min.
Carrying out ultrasonic scanning on the sintered product, and measuring that the interface welding rate is 99% without finding interface peeling; through an X-ray test, the porosity of the welding spot is 1.6%, and almost no obvious defect exists; the shear strength of the packaging structure is 44MPa, and after aging at 250 ℃ for 500h, the shear strength of 39MPa can still be maintained, because the glass material at the interface reacts with the aluminum oxide and part of fine grains are separated out at the interface, the interface bonding force is enhanced.
Comparative example 1
A preformed sheet prepared by the steps of:
obtaining a silver paste by mixing silver flakes of micron size with an organic vehicle, wherein the silver solids content is 60 wt%; and printing the silver paste, and baking at 180 ℃ to obtain a pre-sintered silver film, wherein the thickness of the silver film is 80 mu m, and the obtained pre-sintered silver film is used as a pre-formed sheet.
The preformed sheet prepared by the method is used for carrying out a packaging test, and the method comprises the following steps:
(1) and (3) placing the preformed sheet on a copper substrate, and attaching the surface of the chip to the preformed sheet at the temperature of 120 ℃, under the pressure of 1MPa and for 30 s.
(2) And carrying out hot-pressing sintering on the chip, the preformed sheet and the substrate stacked structure, wherein the sintering temperature is 250 ℃, the pressure is 10MPa, and the time is 10 min.
Through ultrasonic scanning, an unwelded area appears on the interface, and the interface welding rate is 65%; the porosity of the welding spot is 33.9% through an X-ray test; the shear strength of the packaging structure is 18MPa, and after aging at 250 ℃ for 500h, the solder joint is stripped at the copper interface, because the copper interface generates violent oxidation reaction in the hot-pressing sintering process, and the generated oxide hinders the sintering of the silver film and the copper interface. In the subsequent high-temperature aging process, the oxide at the interface continues to grow, and finally, the interface bonding fails under the action of thermal stress, so that the welding spot is peeled off.
Comparative example 2
A composite solder preform sheet is prepared by the following steps:
(1) obtaining a silver paste by mixing a flake silver powder and an organic vehicle, wherein the silver solid content is 50 wt%; and printing the silver paste, and baking at 200 ℃ to obtain a pre-sintered silver film, wherein the thickness of the silver film is 200 mu m.
(2) And depositing the tin-silver-copper solder on one surface of the silver film by using a cold spraying method, wherein the deposition thickness is 10 mu m, and thus obtaining the composite solder preformed sheet.
The prepared composite solder preform is adopted to carry out a packaging test, and the method comprises the following steps:
(1) and placing the composite solder preformed sheet on an alumina substrate, wherein one side of the deposited tin-silver-copper solder is in contact with an alumina interface, and attaching the surface of the chip to the preformed sheet at the temperature of 150 ℃ and under the pressure of 0.1MPa for 10 s.
(2) And carrying out hot-pressing sintering on the chip, the preformed sheet and the substrate stacking structure, wherein the sintering temperature is 380 ℃, the pressure is 20MPa, and the time is 10 min.
Through ultrasonic scanning, the interface is almost completely stripped, and the welding rate is only 6%; through an X-ray test, the porosity of the welding spot is 80.2%; the shear strength of the packaging structure is 2 MPa. This is due to the poor solder wettability of the alumina surface, which results in the failure of the interface to form a metallurgical bond.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (10)
1. A composite solder preform sheet, characterized in that: the silver-based solder comprises a substrate, wherein the substrate is a pre-sintered silver film, one or two surfaces of the substrate are provided with solder layers, and the solder of the solder layers is low-temperature tin-based solder or high-temperature glass frit.
2. The composite solder preform of claim 1, wherein: the thickness of the pre-sintered silver film is 20-200 mu m, the silver content is more than 95%, and the porosity is 50-90%.
3. The composite solder preform of claim 1, wherein: the solder layer is formed on the surface of the substrate by cold spraying, evaporation or sputtering.
4. The composite solder preform of claim 3, wherein: the thickness of the solder layer is 5-50 μm.
5. The composite solder preform of claim 1, wherein: the low-temperature tin-based solder is tin, tin-silver-copper solder, tin-silver solder, tin-copper solder or tin-zinc solder; the high temperature frit comprises V2O5、ZrO2One or a mixture of more of ZnO, BaO and BiO.
6. The method for preparing the composite solder preform as claimed in any one of claims 1 to 5, characterized in that it comprises the steps of:
step S1, preparing silver paste;
step S2, heating the silver paste to obtain a pre-sintered silver film;
step S3, a solder layer is prepared on the silver thin film.
7. The method for producing a composite solder preform sheet according to claim 6, characterized in that: the silver paste comprises silver particles and an organic carrier, and the solid content of the silver paste is 50-80 wt%; the silver particles comprise at least one of flake silver, spherical silver, rod silver and wire-bound silver.
8. The method for producing a composite solder preform sheet according to claim 6, characterized in that: in the step S2, the pre-sintered silver film is prepared by baking silver paste at a low temperature of 150-; in step S3, a solder layer is deposited on the silver thin film by cold spraying, evaporation, or sputtering.
9. A method of packaging, comprising the steps of:
step S10, placing the composite solder preformed sheet on the surface of the lower substrate; the composite solder preform sheet is the composite solder preform sheet according to any one of claims 1 to 5; for a gold, silver, copper or nickel surface metallization substrate, adopting a composite solder preformed sheet with a solder layer of low-temperature tin-based solder; for an aluminum substrate or a ceramic substrate, a composite solder preformed sheet with a solder layer made of glass material solder is adopted;
step S20, surface-mounting the chip on the composite solder preformed sheet in a hot-pressing and surface-mounting manner to form a stacked structure;
step S30, performing hot-press sintering on the stacked structure.
10. The method of packaging of claim 9, wherein: in step S20, the temperature of the hot-pressed patch is 100-150 ℃, the pressure is 0.1-2MPa, and the time is 10-30S; in step S30, the temperature of hot pressing and sintering is 230-300 ℃, the pressure is 1-20MPa, and the time is 1-10 min.
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| CN117334655A (en) * | 2023-09-30 | 2024-01-02 | 江苏富乐华功率半导体研究院有限公司 | Low-porosity interface structure applying silver sintering soldering lug and preparation method |
| CN117334655B (en) * | 2023-09-30 | 2024-05-31 | 江苏富乐华功率半导体研究院有限公司 | Low-porosity interface structure applying silver sintering soldering lug and preparation method |
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