JP2738600B2 - Circuit board - Google Patents

Circuit board

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Publication number
JP2738600B2
JP2738600B2 JP3121405A JP12140591A JP2738600B2 JP 2738600 B2 JP2738600 B2 JP 2738600B2 JP 3121405 A JP3121405 A JP 3121405A JP 12140591 A JP12140591 A JP 12140591A JP 2738600 B2 JP2738600 B2 JP 2738600B2
Authority
JP
Japan
Prior art keywords
conductor
circuit
circuit conductor
tungsten
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3121405A
Other languages
Japanese (ja)
Other versions
JPH04349690A (en
Inventor
憲一 合原
総一 小畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP3121405A priority Critical patent/JP2738600B2/en
Publication of JPH04349690A publication Critical patent/JPH04349690A/en
Application granted granted Critical
Publication of JP2738600B2 publication Critical patent/JP2738600B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は混成集積回路装置等に使
用される回路基板に関し、より詳細には内部にタングス
テン(W) 、モリブデン(Mo)、マンガン(Mn)等の高融点金
属から成る配線導体を、外表面に銅(Cu)から成る回路導
体を有する回路基板の改良に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a circuit board used for a hybrid integrated circuit device or the like, and more particularly, to a circuit board made of a high melting point metal such as tungsten (W), molybdenum (Mo), and manganese (Mn). The present invention relates to an improvement of a circuit board having a wiring conductor having a circuit conductor made of copper (Cu) on an outer surface.

【0002】[0002]

【従来の技術】従来、半導体素子等の能動部品や抵抗
器、コンデンサ等の受動部品を多数搭載し、所定の電子
回路を構成するようになした混成集積回路装置は、通
常、内部にタングステン、モリブデン、マンガン等の高
融点金属から成る配線導体を埋設した絶縁基体の外表面
に銅から成る回路導体をその一部が前記配線導体と接続
するようにして被着させた構造の回路基板を準備し、次
に前記回路基板の表面に半導体素子やコンデンサ、抵抗
器等を載置させるとともに各々の電極端子を前記回路導
体に半田(Sn-Pb合金) 等を介し接合させることによって
形成されている。
2. Description of the Related Art Conventionally, a hybrid integrated circuit device in which a plurality of active parts such as semiconductor elements and passive parts such as resistors and capacitors are mounted to form a predetermined electronic circuit is usually provided with tungsten, Prepare a circuit board having a structure in which a circuit conductor made of copper is attached to the outer surface of an insulating base in which a wiring conductor made of a high melting point metal such as molybdenum or manganese is embedded so that a part of the circuit conductor is connected to the wiring conductor. Then, a semiconductor element, a capacitor, a resistor, and the like are mounted on the surface of the circuit board, and each electrode terminal is joined to the circuit conductor via solder (Sn-Pb alloy) or the like. .

【0003】尚、かかる従来の混成集積回路装置等に使
用される回路基板は一般にセラミックスの積層技術及び
スクリーン印刷等の厚膜技術を採用することによって製
作されており、具体的には以下の方法によって製作され
る。
A circuit board used in such a conventional hybrid integrated circuit device is generally manufactured by employing a ceramic laminating technique and a thick film technique such as screen printing. Produced by

【0004】即ち、まず、アルミナ(Al 2 O 3 ) 、シ
リカ(SiO2 ) 、マグネシア(MgO) 、カルシア(CaO) 等の
電気絶縁性に優れたセラミックス原料粉末に有機溶剤、
溶媒を添加混合して複数枚のセラミック生シートを得る
とともに該各セラミック生シートの上下面にタングステ
ン、モリブデン、マンガン等の高融点金属粉末から成る
導電ペーストを従来周知のスクリーン印刷等の厚膜手法
を採用することによって所定パターンに印刷塗布する。
[0004] First, an organic solvent is added to a ceramic raw material powder such as alumina (Al 2 O 3 ), silica (SiO 2 ), magnesia (MgO), and calcia (CaO) which has excellent electrical insulation properties.
A solvent is added and mixed to obtain a plurality of ceramic raw sheets, and a conductive paste made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like is formed on the upper and lower surfaces of each ceramic raw sheet by a conventionally known thick film method such as screen printing. Is applied in a predetermined pattern by printing.

【0005】次に前記各セラミック生シートを積層
し、積層体を得るとともにこれを約1500℃の温度で焼成
し、内部及び表面にタングステン、モリブデン、マンガ
ン等の高融点金属から成る配線導体を有する絶縁基体を
得る。
Next, the respective ceramic green sheets are laminated to obtain a laminate, which is fired at a temperature of about 1500 ° C., and has a wiring conductor made of a refractory metal such as tungsten, molybdenum, manganese or the like inside and on the surface. Obtain an insulating substrate.

【0006】そして最後に前記絶縁基体の外表面に、
銅(Cu)粉末に有機溶剤、溶媒を添加混合して得た銅ペー
ストを従来周知のスクリーン印刷法によりその一部が前
記配線導体と接続するようにして塗布させ、しかる後、
これを中性雰囲気( 窒素雰囲気) 中、約900 ℃の温度で
焼成し、絶縁基体を形成するアルミナ(Al 2 O 3 ) と銅
(Cu)とを反応させ、絶縁基体と銅粉末との界面にアルミ
ン酸銅(CuAl 2 O 3 ) の化合物を析出させることによっ
て銅粉末から成る回路導体を絶縁基体上に強固に被着
し、これによって製品としての回路基板となる。
Finally, on the outer surface of the insulating substrate,
A copper paste obtained by adding and mixing an organic solvent and a solvent to copper (Cu) powder is partially partially
It is applied so as to be connected to the wiring conductor, and after that,
This is fired in a neutral atmosphere (nitrogen atmosphere) at a temperature of about 900 ° C to form alumina (Al 2 O 3 ) and copper to form an insulating substrate.
(Cu), and a circuit conductor composed of copper powder is firmly adhered to the insulating substrate by depositing a compound of copper aluminate (CuAl 2 O 3 ) at the interface between the insulating substrate and the copper powder, This results in a circuit board as a product.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、この従
来の回路基板は回路導体を絶縁基体上に強固に被着させ
るために回路導体と絶縁基体との界面にアルミン酸銅と
いう化合物を析出させており、該アルミン酸銅は錫(Sn)
の拡散により解離( 化合物の結合が切れ、各々の成分に
分離すること) し易い。そのためこの回路基板の回路導
体に半導体素子やコンデンサ、抵抗器等の電極端子を半
田(Sn-Pb合金) を介して接合させ混成集積回路装置とな
した場合、該混成集積回路装置に作動時の熱( 約150
℃) が印加されるとコンデンサ等の電極端子を回路導体
に接合する半田の錫が回路導体と絶縁基体の界面にある
アルミン酸銅に拡散していき、その結果、回路導体を絶
縁基体に強固に被着させるアルミン酸銅が解離され、回
路導体の被着強度が大きく劣化して回路基板としての、
また混成集積回路装置としての信頼性が大きく低下する
という欠点を有していた。
However, in this conventional circuit board, a compound called copper aluminate is deposited on the interface between the circuit conductor and the insulating substrate in order to firmly adhere the circuit conductor on the insulating substrate. , The copper aluminate is tin (Sn)
Is easily dissociated (the bond of the compound is broken and separated into each component). For this reason, when an electrode terminal of a semiconductor element, a capacitor, a resistor, or the like is joined to the circuit conductor of the circuit board via solder (Sn-Pb alloy) to form a hybrid integrated circuit device, the hybrid integrated circuit device operates during operation. Heat (about 150
(° C) is applied, the tin of the solder that joins the electrode terminals of the capacitor and the like to the circuit conductor diffuses into the copper aluminate at the interface between the circuit conductor and the insulating substrate, and as a result, the circuit conductor is firmly attached to the insulating substrate. The copper aluminate to be adhered to the substrate is dissociated, and the adhesion strength of the circuit conductor is greatly degraded.
In addition, there is a disadvantage that the reliability of the hybrid integrated circuit device is greatly reduced.

【0008】[0008]

【課題を解決するための手段】本発明はタングステン、
モリブデン、マンガンの少なくとも1種から成る配線導
体を設けた絶縁基体の外表面に、銅から成る回路導体を
その一部が前記配線導体と接続するようにして被着させ
た回路基板において、前記配線導体と前記回路導体との
接合面にニッケル、コバルトの少なくとも1種とタング
ステン、モリブデンの少なくとも1種とホウ素との合金
を主成分とする金属から成る中間金属層を介在させると
ともに、前記回路導体の外表面にニッケル、鉄、マンガ
ンの少なくとも1種を主成分とし、タングステンを2.0
乃至10.0重量%含有する被覆層を層着させたことを特徴
とするものである。
SUMMARY OF THE INVENTION The present invention is directed to tungsten,
In a circuit board, a circuit conductor made of copper is adhered on an outer surface of an insulating base provided with a wiring conductor made of at least one of molybdenum and manganese so that a part of the circuit conductor is connected to the wiring conductor. An intermediate metal layer made of a metal mainly containing an alloy of at least one of nickel, cobalt, tungsten, and at least one of molybdenum and boron is interposed on a joint surface between the conductor and the circuit conductor. The outer surface contains at least one of nickel, iron, and manganese as main components, and tungsten is 2.0
A coating layer containing from about 10.0% by weight to about 10.0% by weight.

【0009】[0009]

【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図1は本発明の回路基板を説明するための一部拡大
断面図であり、1 は電気絶縁性の材料から成る絶縁基体
である。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 is a partially enlarged sectional view for explaining a circuit board of the present invention, and 1 is an insulating base made of an electrically insulating material.

【0010】前記絶縁基体1 は、例えばアルミナセラミ
ックス等の電気絶縁材料から成り、アルミナ(Al 2 O
3 ) 、シリカ(SiO2 ) 、マグネシア(MgO) 、カルシア
(CaO) 等のセラミックス原料粉末に有機溶剤、溶媒を添
加混合して泥漿状となすとともにこれをドクターブレー
ド法を採用することによってセラミック生シートを得、
しかる後、前記セラミック生シートに適当な穴あけ加工
を施すとともに複数枚積層し、還元雰囲気中、約1500℃
の温度で焼成することによって製作される。
The insulating substrate 1 is made of, for example, an electrically insulating material such as alumina ceramics, and is made of alumina (Al 2 O).
3 ), silica (SiO 2 ), magnesia (MgO), calcia
An organic solvent is added to a ceramic raw material powder such as (CaO), a solvent is added and mixed to form a slurry, and a ceramic raw sheet is obtained by employing a doctor blade method,
Thereafter, the ceramic green sheet is subjected to an appropriate drilling process and a plurality of the sheets are laminated, and in a reducing atmosphere, about 1500 ° C.
It is manufactured by firing at a temperature of

【0011】また前記絶縁基体1 にはその内部から上面
に導出する配線導体2 が設けてあり、該配線導体2 はタ
ングステン、モリブデン、マンガンの少なくとも1 種よ
り形成されている。
The insulating substrate 1 is provided with a wiring conductor 2 extending from the inside to the upper surface, and the wiring conductor 2 is formed of at least one of tungsten, molybdenum, and manganese.

【0012】前記配線導体2 はタングテン、モリブデ
ン、マンガンの粉末に有機溶剤、溶媒を添加混合して導
体ペーストを作り、該導体ペーストを前記セラミック生
シートの上下面にスクリーン印刷等により所定パターン
に印刷塗布させておくことによって絶縁基体1 の内部及
び表面に被着形成される。
The wiring conductor 2 is prepared by adding and mixing an organic solvent and a solvent to powder of tungsten, molybdenum, and manganese to form a conductor paste, and printing the conductor paste on the upper and lower surfaces of the ceramic green sheet in a predetermined pattern by screen printing or the like. By being applied, it is adhered to the inside and the surface of the insulating base 1.

【0013】また前記配線導体2 の露出外表面を含む絶
縁基体1 表面には銅(Cu)から成る回路導体3 が被着され
ており、該回路導体3 には半導体素子等の能動部品や抵
抗器、コンデンサ等の受動部品の各電極端子が接続され
る。
A circuit conductor 3 made of copper (Cu) is adhered to the surface of the insulating base 1 including the exposed outer surface of the wiring conductor 2, and the circuit conductor 3 is provided with an active component such as a semiconductor element or a resistor. Each electrode terminal of a passive component such as a container or a capacitor is connected.

【0014】前記回路導体3 は銅の粉末に有機溶剤、溶
媒を添加混合して銅ペーストを作り、該銅ペーストをそ
の一部が配線導体2 と接続するようにして絶縁基体1 の
外表面に印刷塗布し、しかる後、これを中性雰囲気中、
約900 ℃の温度で焼成し、絶縁基体1 を形成するアルミ
ナと銅とを反応させ、絶縁基体1 と銅粉末との界面にア
ルミン酸銅の化合物を析出させることによって絶縁基体
1 の外表面に被着される。
The circuit conductor 3 is formed by adding an organic solvent and a solvent to copper powder to form a copper paste, and applying the copper paste to the outer surface of the insulating base 1 so that a part of the copper paste is connected to the wiring conductor 2. Print and apply, and then, in a neutral atmosphere,
By sintering at a temperature of about 900 ° C., the alumina and copper forming the insulating substrate 1 react with each other, and a copper aluminate compound is precipitated at the interface between the insulating substrate 1 and the copper powder, thereby forming an insulating substrate.
1 Deposited on the outer surface.

【0015】尚、前記配線導体2 と回路導体3 との接合
面にニッケル(Ni)、コバルト(Co)の少なくとも1 種とタ
ングステン、モリブデンの少なくとも1 種とホウ素との
合金を主成分とする金属から成る中間金属層を被着形成
しておくと、該中間金属層が配線導体2 と回路導体3 と
の濡れ性( 反応性) を大幅に改善させ、配線導体2 と回
路導体3 とを完全に密着させて両者間の電気的導通を極
めて優れたものとなすことができる。
The bonding surface between the wiring conductor 2 and the circuit conductor 3 is made of a metal mainly composed of an alloy of at least one of nickel (Ni) and cobalt (Co) with tungsten and at least one of molybdenum and boron. When an intermediate metal layer made of is formed on the wiring conductor 2, the intermediate metal layer greatly improves the wettability (reactivity) between the wiring conductor 2 and the circuit conductor 3 and completely connects the wiring conductor 2 and the circuit conductor 3. And the electrical conduction between the two can be made extremely excellent.

【0016】また前記ニッケル、コバルトの少なくとも
1 種とタングステン、モリブデンの少なくとも1 種とホ
ウ素との合金を主成分とする金属から成る中間金属層
は、タングステン、モリブデンの合計重量がニッケル、
コバルトの合計重量100 に対し2.0%未満となると回路導
体2 を構成する銅の一部が中間金属層内に拡散し、配線
導体2 に直接接触して配線導体2 と回路導体3 との密着
性が劣化してしまう傾向にあり、またタングステン、モ
リブデンの合計重量がニッケル、コバルトの合計重量10
0 に対し50.0% を越えると中間金属層と回路導体3 との
濡れ性( 反応性)が悪くなり、回路導体3 を配線導体
2 に密着性良く被着させることができなくなる傾向にあ
ることから中間金属層はタングステン、モリブデンの合
計重量をニッケル、コバルトの合計重量100 に対し2.0
乃至50.0% の範囲としておくことが望ましい。
Further, at least one of the above nickel and cobalt
An intermediate metal layer made of a metal mainly containing an alloy of one kind with tungsten and at least one kind of molybdenum with boron has a total weight of tungsten and molybdenum of nickel,
If the total weight of cobalt is less than 2.0% of the total weight of 100, a part of the copper constituting the circuit conductor 2 diffuses into the intermediate metal layer and directly contacts the wiring conductor 2 to adhere to the wiring conductor 2 and the circuit conductor 3. And the total weight of tungsten and molybdenum is 10% of the total weight of nickel and cobalt.
If it exceeds 50.0% with respect to 0, the wettability (reactivity) between the intermediate metal layer and the circuit conductor 3 deteriorates, and the circuit conductor 3 is connected to the wiring conductor.
(2) Since the intermediate metal layer tends to be unable to adhere with good adhesion, the total weight of tungsten and molybdenum is 2.0
It is desirable to set the range to 50.0%.

【0017】更に前記中間金属層に含有されるホウ素は
その含有量が0.1 重量%未満であると中間金属層表面に
酸化膜が形成されて中間金属層と回路導体3 との密着性
が劣化する傾向にあり、また3.0 重量%を越えると中間
金属層が硬く、脆くなり、温度サイクル等の熱ストレス
が印加されるとクラックを発生して配線導体2 と回路導
体3 との電気的導通が悪くなる傾向にある。従って、中
間金属層に含有されるホウ素はその含有量を0.1 乃至3.
0 重量%の範囲としておくことが望ましい。
Further, when the content of boron contained in the intermediate metal layer is less than 0.1% by weight, an oxide film is formed on the surface of the intermediate metal layer, and the adhesion between the intermediate metal layer and the circuit conductor 3 is deteriorated. When the content exceeds 3.0% by weight, the intermediate metal layer becomes hard and brittle, and when heat stress such as temperature cycling is applied, cracks are generated, resulting in poor electrical conduction between the wiring conductor 2 and the circuit conductor 3. Tend to be. Therefore, the boron contained in the intermediate metal layer has a content of 0.1 to 3.
It is desirable to keep the range of 0% by weight.

【0018】また更に前記中間金属層はその厚みが0.1
μm 未満であると回路導体3 を形成する銅の一部が中間
金属層内を拡散し、配線導体2 に直接接触して配線導体
2 と回路導体3 の密着性が劣化する傾向にあり、また1
0.0μm を越えると中間金属層に内部応力によるクラッ
クが発生し、回路導体3 の一部が中間金属層のクラック
を介して配線導体2 に直接接触し、配線導体2 と回路導
体3 との密着性が劣化する傾向にあることから中間金属
層の厚みは0.1 乃至10.0μm の範囲としておくことが好
ましい。
Further, the intermediate metal layer has a thickness of 0.1
If it is less than μm, a part of the copper forming the circuit conductor 3 diffuses in the intermediate metal layer and directly contacts the wiring conductor 2 to form the wiring conductor.
The adhesion between 2 and the circuit conductor 3 tends to deteriorate.
If the thickness exceeds 0.0 μm, a crack occurs due to internal stress in the intermediate metal layer, and a part of the circuit conductor 3 directly contacts the wiring conductor 2 via the crack in the intermediate metal layer, and the wiring conductor 2 and the circuit conductor 3 adhere to each other. It is preferable that the thickness of the intermediate metal layer be in the range of 0.1 to 10.0 μm because the property tends to deteriorate.

【0019】前記絶縁基体1 の外表面に被着させた回路
導体3 は更にその外表面にニッケル(Ni)、鉄(Fe)、マン
ガン(Mn)の少なくとも1 種を主成分とする被覆層4 が従
来周知の電解めっき方法、或いは無電解めっき方法によ
って層着されており、該被覆層4 は回路導体3 に半導体
素子やコンデンサ等の電極端子を半田を介して接合させ
る際、回路導体3 と半田との濡れ性を改善し、回路導体
3 に半導体素子やコンデンサ等の電極端子を強固に接合
させる作用を為す。
The circuit conductor 3 adhered to the outer surface of the insulating base 1 further includes a coating layer 4 mainly composed of at least one of nickel (Ni), iron (Fe) and manganese (Mn) on the outer surface. Is coated by a conventionally known electrolytic plating method or an electroless plating method, and when the electrode terminal such as a semiconductor element or a capacitor is joined to the circuit conductor 3 via solder, the coating layer 4 Improves solder wettability and improves circuit conductors
The third function is to firmly join the electrode terminals of semiconductor elements and capacitors.

【0020】また前記被覆層4 は半田に含まれる錫の拡
散を有効に防止する作用を為し、回路導体3 に半導体素
子やコンデンサ等の電極端子を半田を介して接合させた
としても該半田が回路導体3 と絶縁基体1 との界面に拡
散することはなく半田に含まれる錫が回路導体3 を絶縁
基体1 に強固に被着させているアルミン酸銅を解離させ
ることもない。従って、回路導体3 は絶縁基体1 上に常
に強固に被着することとなる。
The coating layer 4 functions to effectively prevent the diffusion of tin contained in the solder. Even if electrode terminals such as a semiconductor element and a capacitor are connected to the circuit conductor 3 via solder, the coating layer 4 may be used. Does not diffuse to the interface between the circuit conductor 3 and the insulating base 1, and the tin contained in the solder does not dissociate the copper aluminate which firmly adheres the circuit conductor 3 to the insulating base 1. Therefore, the circuit conductor 3 is always firmly adhered on the insulating base 1.

【0021】尚、前記被覆層4 はニッケル、鉄、マンガ
ンの少なくとも1 種を主成分とする金属から成り、ニッ
ケル、鉄、マンガンにモリブデン、タングステン等の金
属を20.0重量%未満含有させてもよい。特にタングステ
ンを2.0 乃至10.0重量%含有させておくとニッケル、
鉄、マンガンの少なくとも1 種を主成分とする金属から
成る被覆層4 中への錫の拡散速度を著しく低下させ、回
路導体3 と絶縁基体1 との被着強度の低下を更に有効に
防止せしめることができる。従って、被覆層4 にはタン
グステンを2.0 乃至10.0重量%含有させておくことが好
ましい。
The coating layer 4 is made of a metal mainly containing at least one of nickel, iron and manganese, and may contain less than 20.0% by weight of a metal such as molybdenum or tungsten in nickel, iron or manganese. . Particularly, when tungsten is contained in an amount of 2.0 to 10.0% by weight, nickel,
The diffusion rate of tin into the coating layer 4 made of a metal containing at least one of iron and manganese as a main component is remarkably reduced, and the adhesion strength between the circuit conductor 3 and the insulating base 1 is more effectively prevented from lowering. be able to. Accordingly, it is preferable that the coating layer 4 contains 2.0 to 10.0% by weight of tungsten.

【0022】また前記被覆層4 はその層厚が.01 μm 以
下であると被覆層4 が半田に含まれる錫の拡散を有効に
防止することができず、回路導体3 の絶縁基体1 に対す
る被着強度が劣化する傾向にあり、また12.0μm を越え
ると被覆層4 中にめっきの際の応力が大きく内在し、小
さな外力印加によっても被覆層4 が回路導体3 より剥離
してしまう傾向にあることから被覆層4 はその層厚を0.
1 乃至12.0μm の範囲としてくことが好ましい。
If the thickness of the coating layer 4 is less than 0.01 μm, the coating layer 4 cannot effectively prevent the diffusion of tin contained in the solder, and the coating of the circuit conductor 3 on the insulating base 1 cannot be prevented. When the thickness exceeds 12.0 μm, the stress at the time of plating is large in the coating layer 4 and the coating layer 4 tends to peel off from the circuit conductor 3 even when a small external force is applied. Therefore, the coating layer 4 has a thickness of 0.
It is preferable that the thickness be in the range of 1 to 12.0 μm.

【0023】更に前記被覆層4 の外表面に金(Au)から成
る層を0.1 乃至5.0 μm の層厚に層着させておくと被覆
層4 の酸化腐食を有効に防止するとともに半導体素子や
コンデンサ等の電極端子を回路導体3 により強固に接合
させることができる。従って、被覆層4 の外表面には更
に金から成る層を0.1 乃至5.0 μm の範囲に層着させて
おくことが好ましい。
Further, when a layer made of gold (Au) is applied on the outer surface of the coating layer 4 to a thickness of 0.1 to 5.0 μm, oxidation corrosion of the coating layer 4 can be effectively prevented, and a semiconductor element or a capacitor can be formed. And the like can be more firmly joined to the circuit conductor 3. Therefore, it is preferable to further coat a layer made of gold in the range of 0.1 to 5.0 μm on the outer surface of the coating layer 4.

【0024】かくしてこの回路基板はその表面に半導体
素子や抵抗器、コンデンサ等が載置され、該半導体素子
等を回路導体に半田を介し接合させることによって混成
集積回路装置となる。
Thus, the circuit board has a semiconductor element, a resistor, a capacitor, and the like mounted on the surface thereof, and the semiconductor element and the like are joined to circuit conductors via solder to form a hybrid integrated circuit device.

【0025】[0025]

【発明の効果】本発明の回路基板によれば、配線導体と
回路導体との接合面にニッケル、コバルトの少なくとも
1種とタングステン、モリブデンの少なくとも1種とホ
ウ素との合金を主成分とする金属から成る中間金属層が
介在されているとともに、回路導体の外表面にニッケ
ル、鉄、マンガンの少なくとも1種を主成分とする被覆
層が層着されていることから、配線導体と回路導体とを
完全に密着させて両者間の電気的導通を極めて優れたも
のとなすことができるとともに、回路導体に半導体素子
やコンデンサ等の電極端子を半田を介して接合させたと
しても該半田に含まれる錫が回路導体と絶縁基体との界
面に拡散することは一切なく、回路導体と絶縁基体との
界面に析出されたアルミン酸銅の解離を皆無として回路
導体を絶縁基体に常に強固に被着させることが可能とな
り、混成集積回路装置等に使用される回路基板として極
めて有用となる。
According to the circuit board of the present invention, a metal mainly composed of an alloy of at least one of nickel and cobalt and tungsten and at least one of molybdenum and boron is provided on the joint surface between the wiring conductor and the circuit conductor. And an intermediate metal layer consisting of at least one of nickel, iron and manganese is layered on the outer surface of the circuit conductor, so that the wiring conductor and the circuit conductor are separated from each other. The electrical connection between the two can be made extremely excellent by bringing them into close contact, and even if the electrode terminals of a semiconductor element or a capacitor are joined to the circuit conductor via solder, the tin contained in the solder is Does not diffuse to the interface between the circuit conductor and the insulating substrate, and the copper conductor deposited on the interface between the circuit conductor and the insulating substrate is free from dissociation, and the circuit conductor is always dispersed on the insulating substrate. It becomes possible to firmly adhered, is extremely useful as a circuit board for use in the hybrid integrated circuit device or the like.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明にかかる回路基板を説明するための一部
拡大断面図である。
FIG. 1 is a partially enlarged cross-sectional view for explaining a circuit board according to the present invention.

【符号の説明】[Explanation of symbols]

1・・・絶縁基体 2・・・配線導体 3・・・回路導体 4・・・被覆層 DESCRIPTION OF SYMBOLS 1 ... Insulating base 2 ... Wiring conductor 3 ... Circuit conductor 4 ... Cover layer

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−127194(JP,A) 特開 昭63−144554(JP,A) 特開 昭61−236192(JP,A) 特開 昭59−117189(JP,A) 特開 昭63−110697(JP,A) 特公 昭63−42879(JP,B2) ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-61-127194 (JP, A) JP-A-63-144554 (JP, A) JP-A-61-236192 (JP, A) JP-A-59-127 117189 (JP, A) JP-A-63-110697 (JP, A) JP-B-63-42879 (JP, B2)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】タングステン、モリブデン、マンガンの少
なくとも1種から成る配線導体を設けた絶縁基体の外表
面に、銅から成る回路導体をその一部が前記配線導体と
接続するようにして被着させた回路基板おいて、前記
配線導体と前記回路導体との接合面にニッケル、コバル
トの少なくとも1種とタングステン、モリブデンの少な
くとも1種とホウ素との合金を主成分とする金属から成
る中間金属層を介在させるとともに、前記回路導体の外
表面にニッケル、鉄、マンガンの少なくとも1種を主成
分とし、タングステンを2.0 乃至10.0重量%含有する被
覆層を層着させたことを特徴とする回路基板。
1. A circuit conductor made of copper is adhered to an outer surface of an insulating substrate provided with a wiring conductor made of at least one of tungsten, molybdenum, and manganese so that a part of the circuit conductor is connected to the wiring conductor. circuit Oite on board, the
Nickel or cobalt is applied to the joint surface between the wiring conductor and the circuit conductor.
And at least one of tungsten and molybdenum
At least one alloy consisting of an alloy of boron and a metal
And a coating layer containing at least one of nickel, iron, and manganese as a main component and containing 2.0 to 10.0% by weight of tungsten on the outer surface of the circuit conductor. Circuit board.
JP3121405A 1991-05-27 1991-05-27 Circuit board Expired - Lifetime JP2738600B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3121405A JP2738600B2 (en) 1991-05-27 1991-05-27 Circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3121405A JP2738600B2 (en) 1991-05-27 1991-05-27 Circuit board

Publications (2)

Publication Number Publication Date
JPH04349690A JPH04349690A (en) 1992-12-04
JP2738600B2 true JP2738600B2 (en) 1998-04-08

Family

ID=14810364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3121405A Expired - Lifetime JP2738600B2 (en) 1991-05-27 1991-05-27 Circuit board

Country Status (1)

Country Link
JP (1) JP2738600B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3561240B2 (en) 2001-05-25 2004-09-02 京セラ株式会社 Manufacturing method of wiring board
US20110281136A1 (en) * 2010-05-14 2011-11-17 Jenq-Gong Duh Copper-manganese bonding structure for electronic packages

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117189A (en) * 1982-12-24 1984-07-06 株式会社日立製作所 Ceramic circuit board
JPS61127194A (en) * 1984-11-26 1986-06-14 京セラ株式会社 Ceramic wiring board
JPS61236192A (en) * 1985-04-12 1986-10-21 株式会社日立製作所 Electrode formation for ceramic substrate
JP2576471B2 (en) * 1986-08-11 1997-01-29 ブラザー工業株式会社 Printer paper holding device
US4751349A (en) * 1986-10-16 1988-06-14 International Business Machines Corporation Zirconium as an adhesion material in a multi-layer metallic structure
JPS63144554A (en) * 1986-12-09 1988-06-16 Tdk Corp Manufacture of thick-film hybrid integrated circuit substrate

Also Published As

Publication number Publication date
JPH04349690A (en) 1992-12-04

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