JPH04349690A - Circuit board - Google Patents
Circuit boardInfo
- Publication number
- JPH04349690A JPH04349690A JP12140591A JP12140591A JPH04349690A JP H04349690 A JPH04349690 A JP H04349690A JP 12140591 A JP12140591 A JP 12140591A JP 12140591 A JP12140591 A JP 12140591A JP H04349690 A JPH04349690 A JP H04349690A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- circuit
- circuit conductor
- insulating substrate
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 87
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000011247 coating layer Substances 0.000 claims abstract description 17
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 16
- 239000010937 tungsten Substances 0.000 claims abstract description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011572 manganese Substances 0.000 claims abstract description 14
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 14
- 239000011733 molybdenum Substances 0.000 claims abstract description 14
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 13
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 239000010410 layer Substances 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 11
- -1 etc. Chemical compound 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- 229910017052 cobalt Inorganic materials 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000012777 electrically insulating material Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910020816 Sn Pb Inorganic materials 0.000 description 2
- 229910020922 Sn-Pb Inorganic materials 0.000 description 2
- 229910008783 Sn—Pb Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910018565 CuAl Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は混成集積回路装置等に使
用される回路基板に関し、より詳細には内部にタングス
テン（Ｗ） 、モリブデン（Ｍｏ）、マンガン（Ｍｎ）
等の高融点金属から成る配線導体を、外表面に銅（Ｃｕ
）から成る回路導体を有する回路基板の改良に関するも
のである。[Field of Industrial Application] The present invention relates to a circuit board used in a hybrid integrated circuit device, etc., and more specifically, the present invention relates to a circuit board that is used in a hybrid integrated circuit device, etc.
The wiring conductor is made of high melting point metal such as copper (Cu) on the outer surface.
) This invention relates to an improvement of a circuit board having a circuit conductor consisting of:
【０００２】0002
【従来の技術】従来、半導体素子等の能動部品や抵抗器
、コンデンサ等の受動部品を多数搭載し、所定の電子回
路を構成するようになした混成集積回路装置は、通常、
内部にタングステン、モリブデン、マンガン等の高融点
金属から成る配線導体を埋設した絶縁基体の外表面に銅
から成る回路導体をその一部が前記配線導体と接続する
ようにして被着させた構造の回路基板を準備し、次に前
記回路基板の表面に半導体素子やコンデンサ、抵抗器等
を載置させるとともに各々の電極端子を前記回路導体に
半田（Ｓｎ−Ｐｂ合金） 等を介し接合させることによ
って形成されている。2. Description of the Related Art Conventionally, hybrid integrated circuit devices, which are equipped with a large number of active parts such as semiconductor elements and passive parts such as resistors and capacitors to form a predetermined electronic circuit, are usually
It has a structure in which a circuit conductor made of copper is adhered to the outer surface of an insulating substrate in which a wiring conductor made of a high-melting point metal such as tungsten, molybdenum, or manganese is embedded so that a part of it is connected to the wiring conductor. By preparing a circuit board, then placing semiconductor elements, capacitors, resistors, etc. on the surface of the circuit board, and joining each electrode terminal to the circuit conductor via solder (Sn-Pb alloy), etc. It is formed.
【０００３】尚、かかる従来の混成集積回路装置等に使
用される回路基板は一般にセラミックスの積層技術及び
スクリーン印刷等の厚膜技術を採用することによって製
作されており、具体的には以下の方法によって製作され
る。[0003] The circuit boards used in such conventional hybrid integrated circuit devices are generally manufactured by employing ceramic lamination technology and thick film technology such as screen printing. Specifically, the following method is used. Produced by.
【０００４】即ち、■まず、アルミナ（Ａｌ ２ Ｏ
３ ） 、シリカ（ＳｉＯ２ ） 、マグネシア（Ｍｇ
Ｏ） 、カルシア（ＣａＯ） 等の電気絶縁性に優れた
セラミックス原料粉末に有機溶剤、溶媒を添加混合して
複数枚のセラミック生シートを得るとともに該各セラミ
ック生シートの上下面にタングステン、モリブデン、マ
ンガン等の高融点金属粉末から成る導電ペーストを従来
周知のスクリーン印刷等の厚膜手法を採用することによ
って所定パターンに印刷塗布する。That is, ■First, alumina (Al 2 O
3), silica (SiO2), magnesia (Mg
A plurality of raw ceramic sheets are obtained by adding and mixing an organic solvent and a solvent to a ceramic raw material powder with excellent electrical insulation properties such as O), calcia (CaO), etc., and tungsten, molybdenum, A conductive paste made of powder of a high melting point metal such as manganese is printed and coated in a predetermined pattern by employing a conventional thick film technique such as screen printing.
【０００５】■次に前記各セラミック生シートを積層し
、積層体を得るとともにこれを約１５００℃の温度で焼
成し、内部及び表面にタングステン、モリブデン、マン
ガン等の高融点金属から成る配線導体を有する絶縁基体
を得る。[0005]Next, the above-mentioned green ceramic sheets are laminated to obtain a laminate, which is fired at a temperature of approximately 1500°C, and wiring conductors made of high-melting point metals such as tungsten, molybdenum, and manganese are formed inside and on the surface. Obtain an insulating substrate having the following properties.
【０００６】■そして最後に前記絶縁基体の外表面に、
銅（Ｃｕ）粉末に有機溶剤、溶媒を添加混合して得た銅
ペーストを従来周知のスクリーン印刷法によりその一部
が前記配線導体と接続するようにして塗布させ、しかる
後、これを中性雰囲気（ 窒素雰囲気） 中、約９００
℃の温度で焼成し、絶縁基体を形成するアルミナ（Ａ
ｌ ２ Ｏ ３ ） と銅（Ｃｕ）とを反応させ、絶縁
基体と銅粉末との界面にアルミン酸銅（ＣｕＡｌ ２
Ｏ ３ ） の化合物を析出させることによって銅粉末
から成る回路導体を絶縁基体上に強固に被着し、これに
よって製品としての回路基板となる。[0006] Finally, on the outer surface of the insulating base,
A copper paste obtained by adding and mixing an organic solvent and a solvent to copper (Cu) powder is applied by a conventionally well-known screen printing method so that a part of it is connected to the wiring conductor, and then this is neutralized. Atmosphere (nitrogen atmosphere): approx. 900
Alumina (A
L 2 O 3 ) and copper (Cu) are reacted to form copper aluminate (CuAl 2
By precipitating a compound of O 3 ), a circuit conductor made of copper powder is firmly adhered to an insulating substrate, thereby forming a circuit board as a product.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、この従
来の回路基板は回路導体を絶縁基体上に強固に被着させ
るために回路導体と絶縁基体との界面にアルミン酸銅と
いう化合物を析出させており、該アルミン酸銅は錫（Ｓ
ｎ）の拡散により解離（ 化合物の結合が切れ、各々の
成分に分離すること） し易い。そのためこの回路基板
の回路導体に半導体素子やコンデンサ、抵抗器等の電極
端子を半田（Ｓｎ−Ｐｂ合金） を介して接合させ混成
集積回路装置となした場合、該混成集積回路装置に作動
時の熱（ 約１５０ ℃） が印加されるとコンデンサ
等の電極端子を回路導体に接合する半田の錫が回路導体
と絶縁基体の界面にあるアルミン酸銅に拡散していき、
その結果、回路導体を絶縁基体に強固に被着させるアル
ミン酸銅が解離され、回路導体の被着強度が大きく劣化
して回路基板としての、また混成集積回路装置としての
信頼性が大きく低下するという欠点を有していた。[Problem to be Solved by the Invention] However, in this conventional circuit board, a compound called copper aluminate is deposited at the interface between the circuit conductor and the insulating base in order to firmly adhere the circuit conductor to the insulating base. , the copper aluminate is tin (S
It is easy to dissociate (break the bond of a compound and separate it into its respective components) due to the diffusion of n). Therefore, when a hybrid integrated circuit device is formed by bonding electrode terminals of semiconductor elements, capacitors, resistors, etc. to the circuit conductors of this circuit board via solder (Sn-Pb alloy), the hybrid integrated circuit device When heat (approximately 150 degrees Celsius) is applied, the tin of the solder that connects the electrode terminals of capacitors and other devices to the circuit conductor diffuses into the copper aluminate at the interface between the circuit conductor and the insulating substrate.
As a result, the copper aluminate that firmly adheres the circuit conductor to the insulating substrate is dissociated, and the adhesion strength of the circuit conductor is significantly deteriorated, resulting in a significant decrease in reliability as a circuit board and as a hybrid integrated circuit device. It had the following drawback.
【０００８】[0008]
【課題を解決すための手段】本発明はタングステン、モ
リブデン、マンガンの少なくとも１種から成る配線導体
を設けた絶縁基体の外表面に、銅から成る回路導体をそ
の一部が前記配線導体と接続するようにして被着させた
回路基板おいて、前記回路導体の外表面にニッケル、鉄
、マンガンの少なくとも１種を主成分とする被覆層を層
着させたことを特徴とするものである。[Means for Solving the Problems] The present invention provides a circuit conductor made of copper, a part of which is connected to the wiring conductor, on the outer surface of an insulating substrate provided with a wiring conductor made of at least one of tungsten, molybdenum, and manganese. The circuit board thus coated is characterized in that a coating layer containing at least one of nickel, iron, and manganese as a main component is deposited on the outer surface of the circuit conductor.
【０００９】[0009]
【実施例】次に本発明を添付図面に基づき詳細に説明す
る。図１は本発明の回路基板を説明するための一部拡大
断面図であり、１ は電気絶縁性の材料から成る絶縁基
体である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained in detail with reference to the accompanying drawings. FIG. 1 is a partially enlarged sectional view for explaining the circuit board of the present invention, and 1 is an insulating base made of an electrically insulating material.
【００１０】前記絶縁基体１ は、例えばアルミナセラ
ミックス等の電気絶縁材料から成り、アルミナ（Ａｌ
２ Ｏ ３ ） 、シリカ（ＳｉＯ２ ） 、マグネシ
ア（ＭｇＯ） 、カルシア（ＣａＯ） 等のセラミック
ス原料粉末に有機溶剤、溶媒を添加混合して泥漿状とな
すとともにこれをドクターブレード法を採用することに
よってセラミック生シートを得、しかる後、前記セラミ
ック生シートに適当な穴あけ加工を施すとともに複数枚
積層し、還元雰囲気中、約１５００℃の温度で焼成する
ことによって製作される。The insulating substrate 1 is made of an electrically insulating material such as alumina ceramics, and is made of an electrically insulating material such as alumina ceramics.
2 O 3 ), silica (SiO2), magnesia (MgO), calcia (CaO), and other ceramic raw material powders are mixed with organic solvents to form a slurry, which is then processed into ceramics using a doctor blade method. A raw ceramic sheet is obtained, and then a plurality of ceramic raw sheets are laminated together with appropriate perforations, and then fired at a temperature of about 1500° C. in a reducing atmosphere.
【００１１】また前記絶縁基体１ にはその内部から上
面に導出する配線導体２ が設けてあり、該配線導体２
はタングステン、モリブデン、マンガンの少なくとも
１ 種より形成されている。Further, the insulating substrate 1 is provided with a wiring conductor 2 leading out from the inside thereof to the upper surface, and the wiring conductor 2
is made of at least one of tungsten, molybdenum, and manganese.
【００１２】前記配線導体２ はタングテン、モリブデ
ン、マンガンの粉末に有機溶剤、溶媒を添加混合して導
体ペーストを作り、該導体ペーストを前記セラミック生
シートの上下面にスクリーン印刷等により所定パターン
に印刷塗布させておくことによって絶縁基体１ の内部
及び表面に被着形成される。The wiring conductor 2 is made by adding and mixing an organic solvent and a solvent to powders of tungsten, molybdenum, and manganese to make a conductor paste, and printing the conductor paste in a predetermined pattern on the upper and lower surfaces of the green ceramic sheet by screen printing or the like. By applying it, it is deposited on the inside and surface of the insulating substrate 1.
【００１３】また前記配線導体２ の露出外表面を含む
絶縁基体１ 表面には銅（Ｃｕ）から成る回路導体３
が被着されており、該回路導体３ には半導体素子等の
能動部品や抵抗器、コンデンサ等の受動部品の各電極端
子が接続される。Further, a circuit conductor 3 made of copper (Cu) is provided on the surface of the insulating base 1 including the exposed outer surface of the wiring conductor 2.
is attached to the circuit conductor 3, and electrode terminals of active parts such as semiconductor elements and passive parts such as resistors and capacitors are connected to the circuit conductor 3.
【００１４】前記回路導体３ は銅の粉末に有機溶剤、
溶媒を添加混合して銅ペーストを作り、該銅ペーストを
その一部が配線導体２ と接続するようにして絶縁基体
１ の外表面に印刷塗布し、しかる後、これを中性雰囲
気中、約９００ ℃の温度で焼成し、絶縁基体１ を形
成するアルミナと銅とを反応させ、絶縁基体１ と銅粉
末との界面にアルミン酸銅の化合物を析出させることに
よって絶縁基体１ の外表面に被着される。The circuit conductor 3 is made of copper powder with an organic solvent,
A copper paste is prepared by adding and mixing a solvent, and the copper paste is printed and coated on the outer surface of the insulating substrate 1 so that a part of it is connected to the wiring conductor 2 , and then this is heated in a neutral atmosphere for about The outer surface of the insulating substrate 1 is coated by firing at a temperature of 900° C., causing the alumina forming the insulating substrate 1 to react with the copper, and depositing a copper aluminate compound at the interface between the insulating substrate 1 and the copper powder. It will be worn.
【００１５】尚、前記配線導体２ と回路導体３ との
接合面にニッケル（Ｎｉ）、コバルト（Ｃｏ）の少なく
とも１ 種とタングステン、モリブデンの少なくとも１
種とホウ素との合金を主成分とする金属から成る中間
金属層を被着形成しておくと、該中間金属層が配線導体
２ と回路導体３ との濡れ性（ 反応性） を大幅に
改善させ、配線導体２ と回路導体３ とを完全に密着
させて両者間の電気的導通を極めて優れたものとなすこ
とができる。Furthermore, at least one of nickel (Ni) and cobalt (Co) and at least one of tungsten and molybdenum are applied to the joint surface between the wiring conductor 2 and the circuit conductor 3.
By depositing an intermediate metal layer made of a metal whose main component is an alloy of seeds and boron, the intermediate metal layer significantly improves the wettability (reactivity) between the wiring conductor 2 and the circuit conductor 3. By doing so, the wiring conductor 2 and the circuit conductor 3 can be completely brought into close contact with each other, and the electrical continuity between them can be extremely excellent.
【００１６】また前記ニッケル、コバルトの少なくとも
１ 種とタングステン、モリブデンの少なくとも１ 種
とホウ素との合金を主成分とする金属から成る中間金属
層は、タングステン、モリブデンの合計重量がニッケル
、コバルトの合計重量１００ に対し２．０％未満とな
ると回路導体２ を構成する銅の一部が中間金属層内に
拡散し、配線導体２ に直接接触して配線導体２ と回
路導体３ との密着性が劣化してしまう傾向にあり、ま
たタングステン、モリブデンの合計重量がニッケル、コ
バルトの合計重量１００ に対し５０．０％ を越える
と中間金属層と回路導体３ との濡れ性（ 反応性）が
悪くなり、回路導体３ を配線導体２ に密着性良く
被着させることができなくなる傾向にあることから中間
金属層はタングステン、モリブデンの合計重量をニッケ
ル、コバルトの合計重量１００ に対し２．０ 乃至５
０．０％ の範囲としておくことが望ましい。[0016] Further, in the intermediate metal layer made of a metal mainly composed of an alloy of at least one of nickel and cobalt, at least one of tungsten and molybdenum, and boron, the total weight of tungsten and molybdenum is equal to the total weight of nickel and cobalt. If the amount is less than 2.0% based on the weight of 100%, part of the copper constituting the circuit conductor 2 will diffuse into the intermediate metal layer, come into direct contact with the wiring conductor 2, and deteriorate the adhesion between the wiring conductor 2 and the circuit conductor 3. If the total weight of tungsten and molybdenum exceeds 50.0% of the total weight of nickel and cobalt (100%), the wettability (reactivity) between the intermediate metal layer and the circuit conductor 3 will deteriorate. , it tends to become impossible to adhere the circuit conductor 3 to the wiring conductor 2 with good adhesion, so the intermediate metal layer should have a total weight of tungsten and molybdenum of 2.0 to 5 per 100 of the total weight of nickel and cobalt.
It is desirable to keep it in the range of 0.0%.
【００１７】更に前記中間金属層に含有されるホウ素は
その含有量が０．１ 重量％未満であると中間金属層表
面に酸化膜が形成されて中間金属層と回路導体３ との
密着性が劣化する傾向にあり、また３．０ 重量％を越
えると中間金属層が硬く、脆くなり、温度サイクル等の
熱ストレスが印加されるとクラックを発生して配線導体
２ と回路導体３ との電気的導通が悪くなる傾向にあ
る。従って、中間金属層に含有されるホウ素はその含有
量を０．１ 乃至３．０ 重量％の範囲としておくこと
が望ましい。Furthermore, if the boron content contained in the intermediate metal layer is less than 0.1% by weight, an oxide film will be formed on the surface of the intermediate metal layer and the adhesion between the intermediate metal layer and the circuit conductor 3 will deteriorate. If the content exceeds 3.0% by weight, the intermediate metal layer becomes hard and brittle, and cracks occur when thermal stress such as temperature cycling is applied, resulting in electrical connection between wiring conductor 2 and circuit conductor 3. communication tends to deteriorate. Therefore, it is desirable that the content of boron contained in the intermediate metal layer be in the range of 0.1 to 3.0% by weight.
【００１８】また更に前記中間金属層はその厚みが０．
１ μｍ 未満であると回路導体３ を形成する銅の一
部が中間金属層内を拡散し、配線導体２ に直接接触し
て配線導体２ と回路導体３ の密着性が劣化する傾向
にあり、また１０．０μｍ を越えると中間金属層に内
部応力によるクラックが発生し、回路導体３ の一部が
中間金属層のクラックを介して配線導体２ に直接接触
し、配線導体２ と回路導体３ との密着性が劣化する
傾向にあることから中間金属層の厚みは０．１ 乃至１
０．０μｍ の範囲としておくことが好ましい。Furthermore, the intermediate metal layer has a thickness of 0.
If the thickness is less than 1 μm, a portion of the copper forming the circuit conductor 3 will tend to diffuse into the intermediate metal layer and come into direct contact with the wiring conductor 2 , resulting in poor adhesion between the wiring conductor 2 and the circuit conductor 3 . Moreover, if it exceeds 10.0 μm, cracks will occur in the intermediate metal layer due to internal stress, and a part of the circuit conductor 3 will directly contact the wiring conductor 2 through the crack in the intermediate metal layer, causing the wiring conductor 2 and the circuit conductor 3 to Since the adhesion tends to deteriorate, the thickness of the intermediate metal layer should be 0.1 to 1.
It is preferable to keep it in the range of 0.0 μm.
【００１９】前記絶縁基体１ の外表面に被着させた回
路導体３ は更にその外表面にニッケル（Ｎｉ）、鉄（
Ｆｅ）、マンガン（Ｍｎ）の少なくとも１ 種を主成分
とする被覆層４ が従来周知の電解めっき方法、或いは
無電解めっき方法によって層着されており、該被覆層４
は回路導体３ に半導体素子やコンデンサ等の電極端
子を半田を介して接合させる際、回路導体３ と半田と
の濡れ性を改善し、回路導体３ に半導体素子やコンデ
ンサ等の電極端子を強固に接合させる作用を為す。The circuit conductor 3 adhered to the outer surface of the insulating substrate 1 is further coated with nickel (Ni), iron (
A coating layer 4 containing at least one of Fe) and manganese (Mn) as a main component is deposited by a conventionally well-known electrolytic plating method or an electroless plating method, and the coating layer 4
improves the wettability between the circuit conductor 3 and the solder when bonding the electrode terminals of a semiconductor element, capacitor, etc. to the circuit conductor 3 via solder, and strengthens the electrode terminals of the semiconductor element, capacitor, etc. to the circuit conductor 3. It has the effect of joining.
【００２０】また前記被覆層４ は半田に含まれる錫の
拡散を有効に防止する作用を為し、回路導体３ に半導
体素子やコンデンサ等の電極端子を半田を介して接合さ
せたとしても該半田が回路導体３ と絶縁基体１ との
界面に拡散することはなく半田に含まれる錫が回路導体
３ を絶縁基体１ に強固に被着させているアルミン酸
銅を解離させることもない。従って、回路導体３ は絶
縁基体１ 上に常に強固に被着することとなる。Furthermore, the coating layer 4 has the function of effectively preventing the diffusion of tin contained in the solder, so that even if an electrode terminal of a semiconductor element or a capacitor is bonded to the circuit conductor 3 through solder, the solder is not diffused into the interface between the circuit conductor 3 and the insulating substrate 1, and tin contained in the solder does not dissociate the copper aluminate that firmly adheres the circuit conductor 3 to the insulating substrate 1. Therefore, the circuit conductor 3 is always firmly adhered to the insulating substrate 1.
【００２１】尚、前記被覆層４ はニッケル、鉄、マン
ガンの少なくとも１ 種を主成分とする金属から成り、
ニッケル、鉄、マンガンにモリブデン、タングステン等
の金属を２０．０重量％未満含有させてもよい。特にタ
ングステンを２．０ 乃至１０．０重量％含有させてお
くとニッケル、鉄、マンガンの少なくとも１ 種を主成
分とする金属から成る被覆層４ 中への錫の拡散速度を
著しく低下させ、回路導体３ と絶縁基体１ との被着
強度の低下を更に有効に防止せしめることができる。従
って、被覆層４ にはタングステンを２．０ 乃至１０
．０重量％含有させておくことが好ましい。The coating layer 4 is made of a metal whose main component is at least one of nickel, iron, and manganese,
Nickel, iron, and manganese may contain less than 20.0% by weight of metals such as molybdenum and tungsten. In particular, when tungsten is contained in an amount of 2.0 to 10.0% by weight, the diffusion rate of tin into the coating layer 4, which is made of a metal whose main component is at least one of nickel, iron, and manganese, is significantly reduced, and the circuit A decrease in adhesion strength between the conductor 3 and the insulating base 1 can be more effectively prevented. Therefore, the covering layer 4 contains 2.0 to 10 tungsten.
．． It is preferable to contain 0% by weight.
【００２２】また前記被覆層４ はその層厚が．０１
μｍ 以下であると被覆層４ が半田に含まれる錫の拡
散を有効に防止することができず、回路導体３ の絶縁
基体１ に対する被着強度が劣化する傾向にあり、また
１２．０μｍ を越えると被覆層４ 中にめっきの際の
応力が大きく内在し、小さな外力印加によっても被覆層
４ が回路導体３ より剥離してしまう傾向にあること
から被覆層４ はその層厚を０．１ 乃至１２．０μｍ
の範囲としてくことが好ましい。Further, the coating layer 4 has a thickness of . 01
If the thickness is less than 12.0 μm, the coating layer 4 will not be able to effectively prevent the diffusion of tin contained in the solder, and the adhesion strength of the circuit conductor 3 to the insulating substrate 1 will tend to deteriorate. The coating layer 4 has a large stress during plating, and the coating layer 4 tends to peel off from the circuit conductor 3 even when a small external force is applied. 12.0μm
It is preferable to keep it within the range of .
【００２３】更に前記被覆層４ の外表面に金（Ａｕ）
から成る層を０．１ 乃至５．０ μｍ の層厚に層着
させておくと被覆層４ の酸化腐食を有効に防止すると
ともに半導体素子やコンデンサ等の電極端子を回路導体
３ により強固に接合させることができる。従って、被
覆層４ の外表面には更に金から成る層を０．１ 乃至
５．０ μｍ の範囲に層着させておくことが好ましい
。Furthermore, gold (Au) is applied to the outer surface of the coating layer 4.
By depositing a layer with a thickness of 0.1 to 5.0 μm, oxidation corrosion of the coating layer 4 can be effectively prevented, and electrode terminals of semiconductor elements, capacitors, etc. can be more firmly bonded to the circuit conductor 3. can be done. Therefore, it is preferable to further coat the outer surface of the coating layer 4 with a gold layer having a thickness of 0.1 to 5.0 μm.
【００２４】かくしてこ回路基板はその表面に半導体素
子や抵抗器、コンデンサ等が載置され、該半導体素子等
を回路導体に半田を介し接合させることによって混成集
積回路装置となる。Thus, the circuit board has semiconductor elements, resistors, capacitors, etc. mounted on its surface, and becomes a hybrid integrated circuit device by joining the semiconductor elements to circuit conductors via solder.
【００２５】[0025]
【発明の効果】本発明の回路基板によれば、回路導体の
外表面にニッケル、鉄、マンガンの少なくとも１ 種を
主成分とする被覆層が層着されていることから回路導体
に半導体素子やコンデンサ等の電極端子を半田を介して
接合させたとしても該半田に含まれる錫が回路導体と絶
縁基体との界面に拡散することは一切なく、回路導体と
絶縁基体との界面に析出されたアルミン酸銅の解離を皆
無として回路導体を絶縁基体に常に強固に被着させるこ
とが可能となり、混成集積回路装置等に使用される回路
基板として極めて有用となる。Effects of the Invention According to the circuit board of the present invention, since the outer surface of the circuit conductor is coated with a coating layer containing at least one of nickel, iron, and manganese as a main component, it is possible to prevent the circuit conductor from containing semiconductor elements or the like. Even if electrode terminals of capacitors, etc. are bonded via solder, the tin contained in the solder never diffuses to the interface between the circuit conductor and the insulating substrate, and is deposited at the interface between the circuit conductor and the insulating substrate. Since there is no dissociation of copper aluminate, it becomes possible to always firmly adhere the circuit conductor to the insulating substrate, and it becomes extremely useful as a circuit board used in hybrid integrated circuit devices and the like.
【図１】本発明にかかる回路基板を説明するための一部
拡大断面図である。FIG. 1 is a partially enlarged sectional view for explaining a circuit board according to the present invention.
１・・・絶縁基体 ２・・・配線導体 ３・・・回路導体 ４・・・被覆層 1... Insulating base 2... Wiring conductor 3...Circuit conductor 4...Covering layer
Claims (1)
なくとも１種から成る配線導体を設けた絶縁基体の外表
面に、銅から成る回路導体をその一部が前記配線導体と
接続するようにして被着させた回路基板おいて、前記回
路導体の外表面にニッケル、鉄、マンガンの少なくとも
１種を主成分とする被覆層を層着させたことを特徴とす
る回路基板。1. A circuit conductor made of copper is adhered to the outer surface of an insulating substrate provided with a wiring conductor made of at least one of tungsten, molybdenum, and manganese, with a part of the circuit conductor being connected to the wiring conductor. 1. A circuit board characterized in that a coating layer containing at least one of nickel, iron, and manganese as a main component is deposited on the outer surface of the circuit conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3121405A JP2738600B2 (en) | 1991-05-27 | 1991-05-27 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3121405A JP2738600B2 (en) | 1991-05-27 | 1991-05-27 | Circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04349690A true JPH04349690A (en) | 1992-12-04 |
| JP2738600B2 JP2738600B2 (en) | 1998-04-08 |
Family
ID=14810364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3121405A Expired - Lifetime JP2738600B2 (en) | 1991-05-27 | 1991-05-27 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2738600B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841885B2 (en) * | 2001-05-25 | 2005-01-11 | Kyocera Corporation | Wiring substrate |
| US20110281136A1 (en) * | 2010-05-14 | 2011-11-17 | Jenq-Gong Duh | Copper-manganese bonding structure for electronic packages |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117189A (en) * | 1982-12-24 | 1984-07-06 | 株式会社日立製作所 | Ceramic circuit board |
| JPS61127194A (en) * | 1984-11-26 | 1986-06-14 | 京セラ株式会社 | Ceramic wiring board |
| JPS61236192A (en) * | 1985-04-12 | 1986-10-21 | 株式会社日立製作所 | Electrode formation for ceramic substrate |
| JPS6342879A (en) * | 1986-08-11 | 1988-02-24 | Brother Ind Ltd | Paper bail device for printer |
| JPS63110697A (en) * | 1986-10-16 | 1988-05-16 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | Multilayer metallic structure |
| JPS63144554A (en) * | 1986-12-09 | 1988-06-16 | Tdk Corp | Manufacture of thick-film hybrid integrated circuit substrate |
-
1991
- 1991-05-27 JP JP3121405A patent/JP2738600B2/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117189A (en) * | 1982-12-24 | 1984-07-06 | 株式会社日立製作所 | Ceramic circuit board |
| JPS61127194A (en) * | 1984-11-26 | 1986-06-14 | 京セラ株式会社 | Ceramic wiring board |
| JPS61236192A (en) * | 1985-04-12 | 1986-10-21 | 株式会社日立製作所 | Electrode formation for ceramic substrate |
| JPS6342879A (en) * | 1986-08-11 | 1988-02-24 | Brother Ind Ltd | Paper bail device for printer |
| JPS63110697A (en) * | 1986-10-16 | 1988-05-16 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | Multilayer metallic structure |
| JPS63144554A (en) * | 1986-12-09 | 1988-06-16 | Tdk Corp | Manufacture of thick-film hybrid integrated circuit substrate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6841885B2 (en) * | 2001-05-25 | 2005-01-11 | Kyocera Corporation | Wiring substrate |
| US7011862B2 (en) | 2001-05-25 | 2006-03-14 | Kyocera Corporation | Method for producing wiring substrate |
| US20110281136A1 (en) * | 2010-05-14 | 2011-11-17 | Jenq-Gong Duh | Copper-manganese bonding structure for electronic packages |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2738600B2 (en) | 1998-04-08 |
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