CN110060973B - Nano metal film module preparation method and substrate preparation method thereof - Google Patents
Nano metal film module preparation method and substrate preparation method thereof Download PDFInfo
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- CN110060973B CN110060973B CN201910331324.6A CN201910331324A CN110060973B CN 110060973 B CN110060973 B CN 110060973B CN 201910331324 A CN201910331324 A CN 201910331324A CN 110060973 B CN110060973 B CN 110060973B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
Abstract
The invention provides a method for preparing a nano metal film module and a method for preparing a substrate thereof, wherein the nano metal film module comprises a nano metal auxiliary connecting module and a substrate, and the nano metal auxiliary connecting module comprises first metal particles and second metal particles; the preparation steps comprise: step 1: preparing metal slurry by adopting micron-sized metal particles or micron/nano-sized mixed metal particles; step 2: printing the metal paste on a non-adhesive substrate to form a thick film to be dried; and step 3: a thick film preform is formed by drying. The invention can customize and update the prefabricated member from the prefabricated member manufacturer according to the requirement, avoids the waste generated by a new silk screen, and has the technical effects of improving the thermal stability, the heat dissipation efficiency, the bonding strength and the packaging reliability.
Description
Technical Field
The invention relates to the field of chip packaging interconnection, in particular to a preparation technology of a composite substrate.
Background
In the field of semiconductors such as power electronics and photoelectric communication, extreme conditions such as high voltage, large current, high switching rate and high operating temperature are often carried by semiconductor devices during operation, and with continuous refreshing of operating voltage and current records of power devices and continuous reduction of chip sizes in recent years, the power density borne by the whole power device is rapidly increased, which provides a new challenge for each part of chip packaging. As a part in direct contact with the chip, the substrate (substrate) serves various functions such as mechanical support, conductive interconnection, heat dissipation management, and prevention of breakdown, and its development is closely related to the chip performance. The traditional flexible substrate or metal substrate can not meet the high performance requirement of the wide bandgap semiconductor; compared with metal-ceramic substrates, metal-ceramic substrates (metal-ceramic substrates) have good thermal conductivity, high insulation, low thermal expansion coefficient and high mechanical strength, and are key materials of power electronics. The copper-clad ceramic substrate (copper-ceramic substrate) is widely applied to the power electronic industry due to the combination of the characteristics of high electrical conductivity, high thermal conductivity and low cost of copper, the advantages of high dielectric coefficient, high fracture toughness and the like of ceramic.
The mainstream schemes for preparing the metal ceramic substrate mainly comprise: direct copper clad process (DCB or DBC) and Active Metal Brazing (AMB). The DCB process realizes the connection of metal ceramics by utilizing the eutectic reaction of copper and aluminum oxide at low oxygen concentration (less than 5ppm) and 1065 ℃ or so to form eutectic phase at the interface. The DCB process is relatively simple, but has the defects that the process temperature is too high, and copper and aluminum oxide have larger difference of thermal expansion coefficients, so that the metal ceramic interface has the risk of generating larger thermal stress and causing cracks in the preparation process and the use process; meanwhile, the thermal conductivity, bending strength and fracture toughness of the aluminum oxide material are relatively poor, so that the aluminum oxide material is not suitable for application in future automobile electronics, electric locomotives and smart grids. The AMB process utilizes reactive metal solders to solder metals and ceramics together under vacuum or protective atmosphere conditions. The process improves the strength of the cermet joining layer and makes it possible to weld copper and silicon nitride ceramics with higher performance by using a titanium-containing brazing material. However, the AMB active solder is very susceptible to oxidation, making vacuum conditions indispensable, thus limiting its application in mass production.
The metal-ceramic substrate, as a part directly contacting with the power chip, has multiple functions of mechanical support, conductive interconnection, heat dissipation management, breakdown prevention and the like, thereby directly affecting the performance and the service life of the device. The copper-clad ceramic substrate (copper-ceramic substrate) is widely applied to the power electronic industry due to the combination of the characteristics of high electrical conductivity, high thermal conductivity and low cost of copper, and the advantages of high dielectric coefficient, high fracture toughness and the like of ceramic. Among them, the process of preparing a cermet substrate using a thick copper technique (thick film) is widely used due to its features such as simplicity in operation, flexibility in design, and material saving.
Prior art is a patent application with patent publication No. US2005/0051253A, which discloses a ceramic substrate directly coated with several metallic conductive coatings. Ceramic paste is printed between these metal coatings to fill the gaps between the metal conductive coatings. Prior art two is patent application publication No. US2004/0163555a, which discloses a ceramic substrate having a metal conductive coating, wherein a ceramic slurry is additionally used to fill gaps between circuits formed by the metal conductive coating. The corresponding ceramic slurry is prepared by mixing ceramic powder with an organic carrier. Prior art three is patent application with patent publication No. EP3419390a1, which discloses a bonding process using conductive copper paste as a connection layer between a copper foil and a ceramic, wherein glass or the like is used as a bonding auxiliary additive. During the baking process, the organic additives and the solvent will volatilize, so that the copper paste forms a compact copper layer. Wherein the copper particles in the copper paste have D50Particle size of 0.1 to 20 um. During sintering, the glass additive will reach the metal-ceramic interface by diffusion or flow, etc., and wet the two surfaces, thereby forming a bond. By the process, the reliability of the thermal cycle is improved by more than ten times.
However, the copper-clad substrate preparation process is limited by the process, and the steps of printing, drying, baking and the like need to be continuously carried out; and a thick copper substrate preparation unit needs to continuously purchase a new printing screen to meet the requirement of updating the pattern design, and the old design screen generates unnecessary waste.
Disclosure of Invention
On one hand, the traditional copper-clad ceramic substrate preparation process is limited by the process, and the steps of printing, drying, baking and the like need to be continuously carried out; and a thick copper substrate preparation unit needs to continuously purchase a new printing screen to meet the requirement of updating the pattern design, and the old design screen generates unnecessary waste. In order to solve the above technical problems, the present invention provides a nanometal film module, comprising:
the nano-metal is connected with the module in an auxiliary way,
a substrate, a first electrode and a second electrode,
the nano metal auxiliary connection module comprises a first metal particle and a second metal particle, and the diameter of the first metal particle is different from that of the second metal particle.
Preferably, the diameter of the first metal particles is 0.1 um-100 μm; the diameter of the second metal particles is 0.5 nm-100 nm.
Preferably, the nano metal auxiliary connection module is a small block which is continuously or discontinuously and discretely arranged; the nano metal auxiliary connecting module has a single-layer, double-layer, three-layer or multi-layer structure.
Preferably, the thickness of the nano metal auxiliary connection module is as follows: 1 micron to 500 microns thick.
Preferably, the nanometal film module further comprises a connection auxiliary additive, an organic vehicle and a solvent.
Preferably, the first metal particles account for 45 wt.% to 95 wt.% of the auxiliary module material; the second metal particles occupy 5-55 wt% of the auxiliary layer material; the connection auxiliary additive accounts for 0.1-9.9 wt% of the auxiliary layer material.
Preferably, the first metal particles and the second metal particles are made of: the alloy comprises three groups of elements including aluminum and indium, four groups of elements including carbon, silicon, tin and lead, five groups of elements including phosphorus, bismuth and antimony, a first sub-group including copper, gold and silver, a fourth sub-group including titanium and zirconium, a sixth sub-group including manganese, tungsten and molybdenum, silver-palladium alloy, gold-palladium alloy, copper-silver-nickel alloy, silver-copper-titanium, silver-copper-indium, silver-copper-tin, aluminum-silicon-copper, aluminum-silicon, aluminum-copper and indium-tin;
the connection assistance additive includes: a glass or ceramic phase consisting of bismuth oxide, silicon oxide, aluminum oxide, calcium oxide, sodium oxide, cesium oxide, yttrium oxide, zinc oxide, magnesium oxide, boron oxide, titanium oxide; and/or comprises: silver, copper, titanium, tin, indium, lead.
Preferably, the first metal particles and the second metal particles have the shapes of: spherical, fibrous, snowflake, sheet, and/or linear shapes.
Preferably, the base material has weak adhesion or no adhesion at all with the nano metal auxiliary connection module.
A method of making a nanometal film module comprising:
step 1: preparing slurry of metal solder by adopting micron-sized metal particles or micron/nanometer-sized mixed metal particles;
step 2: printing the metal paste on a substrate to form a thick film;
and step 3: forming a thick film prefabricated part in a screen printing mode or a laser cutting mode;
and 4, step 4: and spraying or packaging the thick film prefabricated part in an anti-oxidation way.
Preferably, the configuration method in step 1 is as follows:
mixing the second metal particles into the first paste by adopting a mechanical mixing method; the mechanical mixing method is to prepare the metal slurry through magnetic stirring, vacuum defoaming and evaporation;
or, the kinetic energy is given to the second nano metal particles by utilizing an electric field, a magnetic field or air flow, the second nano metal particles are driven into the first paste body in a physical impact mode, and gaps among the first metal particles in the first paste body are filled to form the metal slurry mixed by the multi-size nano particles.
Preferably, the substrate is a carbonized glass, ceramic, metal, or organic polymeric substrate.
Preferably, the step 2 includes, by screen printing, the steps of:
step 2.1: designing a printing silk screen according to the shape and the size of the required discrete prefabricated member;
step 2.2: and printing the slurry on the substrate by a screen printing mode.
Preferably, the step 2 includes, by means of laser cutting:
screen printing the slurry onto the substrate;
the step 3 is as follows: and cutting the thick film prefabricated module in a laser cutting or forging mode.
Preferably, the screen is a screen printed with a non-specific area metal film.
Preferably, the metal paste of step 1 includes first metal particles, second metal particles, a connection auxiliary additive, an organic vehicle, and a solvent.
Preferably, the step 1 further comprises a metal paste pretreatment process, and the metal paste pretreatment process comprises:
and (4) treating the metal slurry by using a defoaming, stirring and grinding mode.
Preferably, the step 3 further comprises a drying process.
Preferably, the drying process is as follows: the drying temperature is 100-150 ℃, and the duration is 5-30 minutes.
A method for preparing a substrate using a nanometal film module, comprising:
step 1: coating the bottom of the nano metal film module with an adhesive;
step 2: placing the nano metal film module on a substrate;
and step 3: placing a metal foil on the surface of the nano metal film module;
and 4, step 4: baking according to a set temperature curve and atmosphere;
and 5: and cooling to form the metal-clad substrate.
Preferably, the binder is alcohol or an organic solvent; the substrate is a ceramic substrate.
Preferably, in the step 2, at least one nano metal film module is distributed on at least one surface of the substrate;
preferably, the set temperature profile is: the peak temperature is 400-900 ℃, and the duration is 30 seconds-30 minutes; the atmosphere is: nitrogen or reducing atmosphere containing less than 6ppm oxygen
The nano metal film module preparation method and the substrate preparation method thereof provided by the invention can customize and update the prefabricated member from the prefabricated member manufacturer according to the requirement, avoid the waste generated by a new silk screen, and have the technical effects of improving the thermal stability, the heat dissipation efficiency, the bonding strength and the packaging reliability.
Drawings
Fig. 1 is a schematic flow chart of a process for preparing a metal ceramic substrate by using the nano metal film module of the present invention.
FIG. 2 is a flow chart of the preparation and application of the nano metal film module of the present invention.
FIG. 3 is a schematic view of a single-layer preform module of the present invention and a process for preparing the same.
Number in the figure: discrete multi-position storage box 1, non-used nano metal film module 2, nano metal film module 3 to be connected, ceramic substrate 4, metal foil 5, connection layer 6 formed after baking, first material metal slurry 7, first material particle 8, nano particle generator 9, electric field or magnetic field 10, second material particle 10, mixed slurry 11, printing scraper 12, printing silk screen (A)13, printing silk screen (B)14, non-adhesive substrate 15, discrete prefabricated module 16, prefabricated module 17 to be cut, laser 18
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, the following examples of which are intended to be illustrative only and are not to be construed as limiting the scope of the invention.
Example one
The embodiment provides a single-layer prefabricated module structure and a preparation method thereof, as shown in fig. 2 and 3. In the single-layer structure, the first material is silver copper titanium active brazing solder, and the second material is nano copper particles.
The preparation method comprises the following steps:
1) preparing a first material of silver-copper-titanium active brazing material slurry;
2) using a physical impact mode to drive nano copper particles (with the average particle diameter of 1nm-100nm) into a first material solder main body;
3) screen printing the solder onto a non-adhesive carbonized glass carrier through a specific pattern to form a separate prefabricated module to be dried;
4) drying;
5) forming a prefabricated module;
6) transferring the pre-formed modules to a discrete multi-position storage cassette.
The method comprises the following specific steps:
1) an organic vehicle was prepared using 40 wt.% Texanol ester alcohol from Istmann, 25 wt.% diethylene glycol dibutyl ether, 35 wt.% acrylic resin, weighing 10 g;
2) mixing 80g of silver (70-80 wt.%) -copper (15-30 wt.%) -titanium (0.5-85 wt.%) mixed powder into the organic carrier;
3) magnetic stirring, vacuum defoaming and evaporating; preparing solder paste;
4) treating the slurry by defoaming, stirring, grinding and the like;
5) printing the slurry on the carbonized glass in a screen printing mode; the screen was designed to be 25mmx25mm per preform size, arranged as 9x 9;
6) drying the substrate, setting the drying temperature to be 100-130 ℃, and lasting for 10-30 minutes to volatilize the organic medium;
7) the final prefabricated module is formed by drying the thick film.
In the embodiment, the small-size nano copper particles are mixed into the first material, so that the welding temperature is effectively reduced; secondly, the small-size nano copper particles effectively fill the original gaps among the first material particles, and the density of the connection auxiliary layer during the rear-section welding can be effectively improved.
Example two
The embodiment provides a single-layer prefabricated module structure and a preparation method thereof, as shown in fig. 2 and 3. In the single layer structure, the bulk (first material) is silver copper titanium active solder paste and the second material is nano copper particles.
The preparation method comprises the following steps:
1) preparing a first material of silver-copper-titanium active brazing material slurry;
2) using a physical impact mode to drive nano copper particles (with the average particle diameter of 1nm-100nm) into a first material solder main body;
3) printing the solder on a non-adhesive carbonized glass carrier through a screen printing of a specific pattern to form a complete prefabricated module to be dried;
4) drying;
5) laser cutting;
6) forming a prefabricated module;
7) transferring the pre-formed modules to a discrete multi-position storage cassette.
In this embodiment, laser cutting of the complete prefabricated module is used to form discrete modules of a particular shape and size, with greater design freedom than conventional screen printing processes.
EXAMPLE III
The embodiment provides a multilayer prefabricated module structure and a preparation method thereof, wherein in the structure, slurry containing large-size metal particles and slurry containing small-size nano copper particles are respectively and sequentially printed on the surface of a non-adhesive base material to form a prefabricated module with a laminated structure; the metal particles with the sizes in the multilayer material of the module can be fused with each other along with the diffusion phenomenon in the subsequent metal-ceramic substrate welding process, and gaps are filled with each other, so that the density of the connection auxiliary layer is improved, and the connection strength is improved. The method comprises the following specific steps:
1) a slurry prepared with micron copper (0.1-100um) is used as the first material (the first material also includes gold, palladium, silver, copper, aluminum, silver palladium alloy, gold palladium alloy, copper silver nickel alloy or copper aluminum alloy. ) (ii) a
2) A slurry prepared using nano-copper particles (1-100nm) as a second material;
3) printing a first material paste on the surface of the non-adhesive carbonized glass carrier by using a screen printing technology; drying;
4) printing a second material paste to the surface of the first paste in the step 3) by using a screen printing technology; drying;
5) forming a prefabricated module;
6) transferring the pre-formed modules to a discrete multi-position storage cassette.
Example four
The present embodiment provides a method for preparing a metal-coated substrate by using a prefabricated module, wherein the steps of preparing the metal-coated substrate by using the nano metal film module are as shown in fig. 1:
1) removing the nanometal film module from the discrete multi-position storage cassette;
2) placing the nano metal film module on the surface of a ceramic substrate by using a pick & place device;
3) heating the metal ceramic substrate to soften the prefabricated module and make the prefabricated module be weakly adhered to the ceramic substrate;
4) placing a metal foil on the surface of the prefabricated module; optionally fixing with or without a clamp;
5) baking the [ metal foil-prefabricated module-ceramic ] system;
6) and cooling the system to form the metal-ceramic substrate.
In the baking process, the organic solvent is completely volatilized in the baking process, and the baking process parameters can be set to be 400-900 ℃ at the peak temperature and 30 seconds-10 minutes in the baking process, and the baking is carried out in the atmosphere of nitrogen (the oxygen content is controlled to be below 6 ppm). In the baking process, on one hand, the combination of the nano copper and the micron copper reduces the overall average grain size of the copper material, thereby achieving the effect of reducing the sintering temperature, wherein the traditional sintering temperature is 900-1100 ℃, and the sintering temperature of the invention is 400-900 ℃; on the other hand, the nano-copper particles can be uniformly mixed with the micron copper in the copper slurry, so that gaps generated by the original micron copper slurry are filled during sintering, and the density of a sintered copper layer is improved.
The invention provides a nano metal film module and a preparation method thereof, wherein the nano metal film module comprises the following steps:
1) the metal solder connection auxiliary layer is improved from the traditional 'slurry' state to a 'prefabricated module' state, so that the metal solder connection auxiliary layer is easy to store; the metal solder connection auxiliary layer has the using effect similar to double-sided adhesive tape and can be used at any time.
2) The nano metal film module can be customized and designed according to requirements, the appearance, the size, the material collocation and the like, and by implementing the scheme, the defect that the traditional metal ceramic connection process needs to be continuously carried out is avoided, and the use degree of freedom is high.
3) Meanwhile, the complete metal solder film is cut by using modes such as laser cutting, forging and the like to form a prefabricated module, so that waste caused by purchasing a new printing screen can be avoided; the cermet substrate preparation unit can also customize the preform from the nanometal film module manufacturer as required, further simplifying production complexity.
4) The invention uses metal particles with mixed sizes, so that the originally existing particle gaps are filled, the specific selection of the sizes of larger and smaller nano metal particles of the invention cannot be achieved by the combination of nano metal particles with other diameters, the invention improves the density after welding, and the metal solder connection assistance of the invention has the technical effects of improving the thermal stability, improving the heat dissipation efficiency, improving the bonding strength and improving the packaging reliability.
Although exemplary embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions, substitutions and the like can be made in form and detail without departing from the scope and spirit of the invention as disclosed in the accompanying claims, all of which are intended to fall within the scope of the claims, and that various steps in the various sections and methods of the claimed product can be combined together in any combination. Therefore, the description of the embodiments disclosed in the present invention is not intended to limit the scope of the present invention, but to describe the present invention. Accordingly, the scope of the present invention is not limited by the above embodiments, but is defined by the claims or their equivalents.
Claims (20)
1. A method for preparing a nanometal film module, comprising:
step 1: preparing first slurry by adopting micron-sized metal particles, and preparing second slurry by adopting nano-sized metal particles;
step 2: printing the first paste and the second paste by a screen printing mode, drying to form a thick film prefabricated part,
and step 3: cutting the thick film preform by means of laser cutting;
and 4, step 4: spraying or packaging the thick film prefabricated part in an anti-oxidation way;
the step 2 comprises the following steps: printing the micron-sized metal particle slurry on a substrate, and drying; and printing the nano-scale metal particle slurry on the dried micron-scale metal particle slurry.
2. The method of claim 1, wherein the substrate is a carbonized glass, ceramic, metal, or organic polymeric substrate.
3. The method for preparing a nanometal film module according to claim 1, wherein the screen printing in the step 2 comprises:
step 2.1: designing a printing silk screen according to the shape and the size of the required discrete prefabricated member;
step 2.2: and printing the first paste and the second paste by a screen printing mode.
4. The method of manufacturing the nanometal membrane module according to claim 3, wherein the screen is a screen printed with a non-specific area metal membrane.
5. The method for preparing a nanometal film module according to claim 1, wherein the first slurry in the step 1 comprises first metal particles, a connection auxiliary additive, an organic vehicle and a solvent; the second paste includes second metal particles, a connection auxiliary additive, an organic vehicle, and a solvent.
6. The method for preparing a nanometal film module according to claim 1, wherein the step 1 further comprises a metal paste pretreatment process comprising:
and (4) treating the metal slurry by using a defoaming, stirring and grinding mode.
7. The method for preparing a nanometal film module according to claim 1, wherein the drying process is: the drying temperature is 100-150 ℃, and the duration is 5-30 minutes.
8. A method for preparing a substrate of a nanometal film module prepared by the method for preparing a nanometal film module according to any one of claims 1 to 7, comprising:
step 1: coating the bottom of the nano metal film module with an adhesive;
step 2: placing the nano metal film module on a substrate;
and step 3: placing a metal foil on the surface of the nano metal film module;
and 4, step 4: baking according to a set temperature curve and atmosphere;
and 5: and cooling to form the metal-clad substrate.
9. The method of claim 8, wherein the binder is an alcohol or an organic solvent; the substrate is a ceramic substrate.
10. The method according to claim 8, wherein in step 2, at least one nanometal film module is distributed on at least one side of the substrate.
11. The method of claim 8, wherein the set temperature profile is: the peak temperature is 400-900 ℃, and the duration is 30 seconds-30 minutes; the atmosphere is: a nitrogen atmosphere or a reducing atmosphere containing less than 6ppm oxygen.
12. A nanometal film module manufactured according to the method for manufacturing a nanometal film module described in any one of claims 1 to 7, comprising:
the nano-metal is connected with the module in an auxiliary way,
a substrate, a first electrode and a second electrode,
the nano metal auxiliary connection module comprises a first metal particle and a second metal particle, and the diameter of the first metal particle is different from that of the second metal particle.
13. The nanometal film module of claim 12, wherein the first metal particles are 0.1-100 μm in diameter; the diameter of the second metal particles is 0.5 nm-100 nm.
14. The nanometal film module of claim 12, wherein the nanometal secondary connection module has a double-layer structure.
15. The nanometal film module of claim 12, wherein the nanometal auxiliary connection module has a thickness of: 1-500 μm thick.
16. The nanometal film module of claim 12, further comprising a connection assistance additive, an organic vehicle, and a solvent.
17. The nanometal film module of claim 12, wherein the first metal particles occupy 45 wt.% to 95 wt.% of the material of the secondary connection module; the second metal particles account for 5-55 wt% of the auxiliary connecting material; the connection auxiliary additive accounts for 0.1-9.9 wt% of the auxiliary connection module material.
18. The nanometal film module of claim 12, wherein the first metal particles and the second metal particle materials are: a group iii element comprising aluminum or indium, a group iv element comprising carbon, silicon, tin or lead, a group v element comprising phosphorus, bismuth or antimony, a first subgroup comprising copper, gold or silver; a fourth subgroup comprising titanium or zirconium, a sixth subgroup comprising manganese, tungsten or molybdenum, silver palladium alloy, gold palladium alloy, copper silver nickel alloy, silver copper titanium, silver copper indium, silver copper tin, aluminum silicon copper or indium tin;
the connection auxiliary additive is: a glass or ceramic phase composed of bismuth oxide, silicon oxide, aluminum oxide, calcium oxide, sodium oxide, cesium oxide, yttrium oxide, zinc oxide, magnesium oxide, boron oxide, or titanium oxide; and/or comprises: silver, copper, titanium, tin, indium or lead;
the substrate material is: a carbonized glass, ceramic, metal, or organic polymeric substrate.
19. The nanometal film module of claim 12, wherein the first metal particles and the second metal particles are in the shapes of: spherical, fibrous, snowflake, sheet, and/or linear shapes.
20. The nanometal film module of claim 12, wherein the base material is weakly adhesive or not adhesive at all with the nanometal secondary connection module.
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| CN201910331324.6A CN110060973B (en) | 2019-04-24 | 2019-04-24 | Nano metal film module preparation method and substrate preparation method thereof |
| PCT/CN2019/123826 WO2020215739A1 (en) | 2019-04-24 | 2019-12-06 | Preparation method for nano-metal film module and substrate preparation method using nano-metal film module |
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| CN110060973B (en) * | 2019-04-24 | 2021-07-30 | 深圳第三代半导体研究院 | Nano metal film module preparation method and substrate preparation method thereof |
| CN112440025B (en) * | 2019-09-02 | 2022-02-18 | 清华大学 | Double-sided micro-nano composite preformed soldering lug for electronic device and low-temperature interconnection method |
| CN111415918B (en) * | 2020-03-06 | 2022-01-25 | 深圳第三代半导体研究院 | Reactive film-based interconnection method |
| CN111942726B (en) * | 2020-06-29 | 2022-04-19 | 深圳第三代半导体研究院 | Sintering process |
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