CN103819214B - AlN ceramic bonded copper substrate and preparation method thereof - Google Patents
AlN ceramic bonded copper substrate and preparation method thereof Download PDFInfo
- Publication number
- CN103819214B CN103819214B CN201410010989.4A CN201410010989A CN103819214B CN 103819214 B CN103819214 B CN 103819214B CN 201410010989 A CN201410010989 A CN 201410010989A CN 103819214 B CN103819214 B CN 103819214B
- Authority
- CN
- China
- Prior art keywords
- aln ceramic
- preparation
- aln
- bonded copper
- copper base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Ceramic Products (AREA)
Abstract
The invention provides an AlN ceramic bonded copper substrate which comprises an AlN ceramic substrate and copper foil bonded and connected onto the AlN ceramic substrate and is characterized in that a spinel structure compound modification layer is formed between the AlN ceramic substrate and the copper foil and comprises one or two of CuAlO2, CuAl2O4, Cu2O and CuO. The invention further provides a preparation method of the AlN ceramic bonded copper substrate. The method comprises the steps of spraying nano Cu2O on the surface of the AlN substrate, sintering in inert gas with a micro oxygen content and air sequentially, and then removing a surface oxide by a pickling manner. The prepared modification layer is tightly combined with matrix ceramic, and also has good affinity characteristic with the Cu foil. A uniform oxidation layer can be formed on the surface of the Cu foil by putting the Cu foil in a prepared solution at a certain temperature for specified time and more facilitates an AlN-DBC (direct bonded copper) technology.
Description
Technical field
The present invention relates to a kind of AlN ceramic bonded copper base and preparation method thereof, belong to ceramic metallization field.
Background technology
AlN ceramic is widely used in the field such as microelectronics, photoelectron with advantages such as the thermal expansivity of the heat conductivility of its excellence, good specific inductivity and Si coupling, AlN ceramic surface metalation mode is various, as electroless plating, DPC, method for brazing etc., be ideal selection for direct copper method (DBC) power electronics, AlN-DBC can meet the comparatively harsh requirement such as power electronic devices high thermal conductance, highly reliable, big current.
AlN ceramic significant characteristic is the aggressiveness of resist melt metal, so relies on liquid phase directly to soak AlN ceramic and just becomes comparatively difficulty.Therefore, be necessary by AlN ceramic surface modification in DBC technique.Usually AlN ceramic high temperature oxidation more than 1200 DEG C is needed to make it Surface Creation one deck Al in traditional DBC technique
2o
3film realizes combining as transition layer and then with Cu within the scope of 1065 DEG C-1083 DEG C.But big area, continuous print copper and Al
2o
3in conjunction with relative difficulty, there is the defect such as bubble, white point at copper and Ceramic bond place, the existence of these defects obviously reduces the performance such as stripping strength, bonding strength, heat shock resistance, thermal conductivity of AlN-DBC substrate more.
Summary of the invention
The preparation method that the object of the invention is to solve AlN ceramic bonded copper base of the prior art is difficult to the reliable deposited technical problem connect realizing AlN ceramic and Copper Foil.
For reaching goal of the invention, the technical solution used in the present invention is: a kind of AlN ceramic bonded copper base, comprise: AlN ceramic, the deposited Copper Foil be connected in AlN ceramic, the compound modified layer of spinel structure is formed, containing CuAlO in the compound modified layer of described spinel structure between described AlN ceramic and Copper Foil
2, CuAl
2o
4, and Cu
2one or both in O, CuO.
In addition, present invention also offers the preparation method of above-mentioned AlN ceramic bonded copper base, comprise the steps:
S1, spraying nanometer Cu
2o forms compound coating on the surface in AlN ceramic;
S2, this is had to the AlN ceramic of compound coating, successively high temperature sintering in the rare gas element and air of micro-oxygen level, the mode of rear pickling removes oxide on surface, then dries;
S3, by Copper Foil chemical oxidation method preoxidation suitable for size, preoxidation solution medicine comprises Na
2s
2o
8, K
2s
2o
8in one, and the one in NaOH, KOH;
The Copper Foil that S4, the AlN ceramic obtained by step S2 and step S3 obtain carries out deposited connecing, obtained AlN ceramic bonded copper base.
Preferably, the thickness of described AlN ceramic is 0.38 ~ 1.0mm; The thickness of described Copper Foil is 0.2 ~ 0.3mm.
Preferably, the thickness of described AlN ceramic is 0.63mm; The thickness of described Copper Foil is 0.3mm.
Preferably, particle diameter is selected to be the nanometer Cu of 100 below nm in step S1
2o, compound thickness of coating is 0.05 ~ 0.15mm.
Preferably, in step S1, compound thickness of coating is 0.1mm.
Preferably; priority described in step S2 is high temperature sintering in the rare gas element and air of micro-oxygen level; refer to and first under the rare gas element Ar guard mode of micro-oxygen level, be sintered to T1 temperature; the insulation t1 time; again in atmosphere with the temperature rise rate of 1 ~ 1.5 DEG C/min from T1 temperature to T2 temperature; the insulation t2 time; wherein T1 is 900 ~ 1000 DEG C; the t1 time is 10 ~ 60Min; T2 is 1080 ~ 1100 DEG C; the t2 time is 10 ~ 60Min, then in mass concentration is to place 10 ~ 60Min in the HCl solution of 5%.
Preferably, described T1 is 1000 DEG C, and the t1 time is 40Min, and temperature rise rate is 1 DEG C/and min, T2 are 1090 DEG C, and the t2 time is 40Min, and pickling time is 40min.
Preferably, described step S4 carries out in atmosphere furnace, and protective atmosphere is the N that purity is greater than or equal to 99.99%
2, temperature is 1070 ~ 1080 DEG C, and the time is 5 ~ 20 Min.
Preferably, in described step S4, temperature is 1075 DEG C, and the time is 15Min.
Implement beneficial effect of the present invention:
1, the method for spraying is adopted can to control the thickness of the compound coating on AlN ceramic surface.
2, high temperature sintering is passed through, compound coating is while self densified sintering product, compound coating and AlN ceramic are closely linked, the compound modified layer of spinel structure of the even compact formed, AlN ceramic and Copper Foil can be separated completely, avoid Cu-O eutectic liquid phase to penetrate into inner AlN layer and AlN and react and generate bubble, thus improve yield rate;
3, the introducing of the compound modified layer of AlN ceramic surface spinel structure, improve the wetness degree on the relative AlN ceramic surface of Cu-O eutectic liquid to a great extent, reduce wetting angle, make Cu-O eutectic liquid fully can soak the surface of AlN ceramic mutually, the joint of Copper Foil and AlN ceramic is more easily realized; Meanwhile, compound modified layer also improves because Copper Foil and the thermal stresses of AlN ceramic do not mate the excessive defect of the AlN ceramic copper-clad base plate internal stress that causes.
Embodiment
embodiment 1
The preparation method of this AlN ceramic bonded copper base, comprises the steps:
S1, spraying: use the method for spraying to carry out spraying plated film on the surface that cleaned thickness is 0.63mmAlN ceramic substrate, make the surface of AlN ceramic form a nanometer Cu
2o coating, the final zinc coat thickness control needed is at 0.1mm;
S2, sintering: will after spraying; 1000 DEG C of temperature are sintered under the AlN ceramic that surface is formed with compound coating is first placed on the rare gas element Ar guard mode of micro-oxygen level; insulation 40Min; then the temperature rise rate of 1 DEG C/min, from 1000 DEG C of temperature to 1090 DEG C of temperature, is incubated 40Min in atmosphere.Be place 40Min in the HCl solution of 5% again in mass concentration, remove oxide on surface.In sintering process, the surface oxidation of AlN ceramic forms Al
2o
3while thin layer, also can there is correlated response in compound coating, and various chemical equation is specific as follows:
AlN+O
2→Al
2O
3+ N
2↑
Al
2O
3+ Cu
2O→Cu AlO
2
AlN+Cu
2O+O
2→Cu AlO
2+ N
2↑
As from the foregoing, compound coating while self densified sintering product, also can with AlN ceramic (or the Al on AlN ceramic surface
2o
3layer) be closely adhered to together.
The oxidation of S3, Copper Foil: the Copper Foil of cutting suitable dimension is put into mass concentration is the Na2S2O8 of 5%, the solution of the NaOH of 10% soaks 5Min copper foil surface and generate Cu at 25 DEG C
2o; The thickness of described Copper Foil is 0.3mm.Concrete chemical equation is as follows:
Na
2S
2O
8+2Cu+2 NaOH→Cu
2O↓+2 Na
2SO
4+H
2O。
The deposited of S4, Copper Foil and AlN ceramic connects: undertaken applying connect putting into tube-type atmosphere furnace after superimposed to the AlN ceramic through high temperature sintering and Copper Foil through preoxidation, protective atmosphere is N
2(purity>=99.99%), deposited jointing temp is 1075 DEG C, and the surface of Copper Foil forms Cu-O eutectic liquid phase, and soaking time is 15Min, then cool to room temperature, then removes the preoxidation layer on non-binding of Copper Foil, obtained AlN ceramic bonded copper base.
In the AlN ceramic bonded copper base finally obtained, stripping strength >=6N/mm; Bubble rate≤10%.
embodiment 2
The preparation method of this AlN ceramic bonded copper base, comprises the steps:
S1, spraying: use the method for spraying to carry out spraying plated film on the surface that cleaned thickness is 0.38mmAlN ceramic substrate, make the surface of AlN ceramic form a nanometer Cu
2o coating, the final zinc coat thickness control needed is at 0.05mm;
S2, sintering: will after spraying; 900 DEG C of temperature are sintered under the AlN ceramic that surface is formed with compound coating is first placed on the rare gas element Ar guard mode of micro-oxygen level; insulation 10Min; then the temperature rise rate of 1.5 DEG C/min, from 900 DEG C of temperature to 1100 DEG C of temperature, is incubated 10Min in atmosphere.Be place 10Min in the HCl solution of 5% again in mass concentration, remove oxide on surface;
The oxidation of S3, Copper Foil: the Copper Foil of cutting suitable dimension is put into the Na that mass concentration is 5%
2s
2o
8, 10% KOH solution in soak at 25 DEG C 5Min copper foil surface generate Cu
2o; The thickness of described Copper Foil is 0.2mm.
The deposited of S4, Copper Foil and AlN ceramic connects: undertaken applying connect putting into tube-type atmosphere furnace after superimposed to the AlN ceramic through high temperature sintering and Copper Foil through preoxidation, protective atmosphere is N
2(purity>=99.99%), deposited jointing temp is 1070 DEG C, and the surface of Copper Foil forms Cu-O eutectic liquid phase, and soaking time is 20Min, then cool to room temperature, then removes the preoxidation layer on non-binding of Copper Foil, obtained AlN ceramic bonded copper base.
The AlN ceramic bonded copper base stripping strength >=5N/mm finally obtained; Bubble rate≤10%.
embodiment 3
The preparation method of this AlN ceramic bonded copper base, comprises the steps:
S1, spraying: use the method for spraying to carry out spraying plated film on the surface that cleaned thickness is 1.0mmAlN ceramic substrate, make the surface of AlN ceramic form a nanometer Cu
2o coating, the final zinc coat thickness control needed is at 0.15mm;
S2, sintering: will after spraying; 1000 DEG C of temperature are sintered under the AlN ceramic that surface is formed with compound coating is first placed on the rare gas element Ar guard mode of micro-oxygen level; insulation 60Min; then the temperature rise rate of 1.2 DEG C/min, from 1000 DEG C of temperature to 1080 DEG C of temperature, is incubated 60Min in atmosphere.Be place 60Min in the HCl solution of 2.5% again in mass concentration, remove oxide on surface.
The oxidation of S3, Copper Foil: the Copper Foil of cutting suitable dimension is put into the K that mass concentration is 5%
2s
2o
8, 10% NaOH solution in soak at 25 DEG C 5Min copper foil surface generate Cu
2o; The thickness of described Copper Foil is 0.25mm.
The deposited of S4, Copper Foil and AlN ceramic connects: undertaken applying connect putting into tube-type atmosphere furnace after superimposed to the AlN ceramic through high temperature sintering and Copper Foil through preoxidation, protective atmosphere is N
2(purity>=99.99%), deposited jointing temp is 1080 DEG C, and the surface of Copper Foil forms Cu-O eutectic liquid phase, and soaking time is 5Min, then cool to room temperature, then removes the preoxidation layer on non-binding of Copper Foil, obtained AlN ceramic bonded copper base.
AlN ceramic bonded copper base >=the 5N/mm finally obtained; Bubble rate≤13%.
embodiment 4
The preparation method of this AlN ceramic bonded copper base, comprises the steps:
S1, spraying: use the method for spraying to carry out spraying plated film on the surface that cleaned thickness is 1.0mmAlN ceramic substrate, make the surface of AlN ceramic form a nanometer Cu
2o coating, the final zinc coat thickness control needed is at 0.1mm;
S2, sintering: will after spraying; 950 DEG C of temperature are sintered under the AlN ceramic that surface is formed with compound coating is first placed on the rare gas element Ar guard mode of micro-oxygen level; insulation 30Min; then the temperature rise rate of 1.3 DEG C/min, from 950 DEG C of temperature to 1090 DEG C of temperature, is incubated 30Min in atmosphere.Be place 50Min in the HCl solution of 5% again in mass concentration, remove oxide on surface.
The oxidation of S3, Copper Foil: the Copper Foil of cutting suitable dimension is put into the K that mass concentration is 5%
2s
2o
8, 10% KOH solution in soak at 25 DEG C 5Min copper foil surface generate Cu
2o; The thickness of described Copper Foil is 0.25mm.
The deposited of S4, Copper Foil and AlN ceramic connects: undertaken applying connect putting into tube-type atmosphere furnace after superimposed to the AlN ceramic through high temperature sintering and Copper Foil through preoxidation, protective atmosphere is N
2(purity>=99.99%), deposited jointing temp is 1075 DEG C, and the surface of Copper Foil forms Cu-O eutectic liquid phase, and soaking time is 13Min, then cool to room temperature, then removes the preoxidation layer on non-binding of Copper Foil, obtained AlN ceramic bonded copper base.
AlN ceramic bonded copper base >=the 6N/mm finally obtained; Bubble rate≤10%.
Claims (9)
1. a preparation method for AlN ceramic bonded copper base, is characterized in that:
S1, spraying nanometer Cu
2o forms compound coating on the surface in AlN ceramic;
S2, this is had to the AlN ceramic of compound coating, successively high temperature sintering in the rare gas element and air of micro-oxygen level, the mode of rear pickling removes oxide on surface, then dries;
S3, by Copper Foil chemical oxidation method preoxidation suitable for size, preoxidation solution medicine comprises Na
2s
2o
8, K
2s
2o
8in one, and the one in NaOH, KOH;
The Copper Foil that S4, the AlN ceramic obtained by step S2 and step S3 obtain carries out deposited connecing, obtained AlN ceramic bonded copper base.
2. the preparation method of AlN ceramic bonded copper base according to claim 1, is characterized in that: the thickness of described AlN ceramic is 0.38 ~ 1.0mm; The thickness of described Copper Foil is 0.2 ~ 0.3mm.
3. the preparation method of AlN ceramic bonded copper base according to claim 2, is characterized in that: the thickness of described AlN ceramic is 0.63mm; The thickness of described Copper Foil is 0.3mm.
4. the preparation method of AlN ceramic bonded copper base according to claim 3, is characterized in that: select particle diameter to be the nanometer Cu of 100 below nm in step S1
2o, compound thickness of coating is 0.05 ~ 0.15mm.
5. the preparation method of AlN ceramic bonded copper base according to claim 4, is characterized in that: in step S1, compound thickness of coating is 0.1mm.
6. the preparation method of AlN ceramic bonded copper base according to claim 4, it is characterized in that: the priority described in step S2 is high temperature sintering in the rare gas element and air of micro-oxygen level, refer to and first under the rare gas element Ar guard mode of micro-oxygen level, be sintered to T1 temperature, the insulation t1 time, again in atmosphere with the temperature rise rate of 1 ~ 1.5 DEG C/min from T1 temperature to T2 temperature, the insulation t2 time, wherein T1 is 900 ~ 1000 DEG C, the t1 time is 10 ~ 60min, T2 is 1080 ~ 1100 DEG C, the t2 time is 10 ~ 60min, then be place 10 ~ 60min in the HCl solution of 5% in mass concentration.
7. the preparation method of AlN ceramic bonded copper base according to claim 6, is characterized in that: described T1 is 1000 DEG C, and the t1 time is 40min, and temperature rise rate is 1 DEG C/and min, T2 are 1090 DEG C, and the t2 time is 40min, and pickling time is 40min.
8. the preparation method of AlN ceramic bonded copper base according to claim 6, is characterized in that: described step S4 carries out in atmosphere furnace, protective atmosphere is the N that purity is greater than or equal to 99.99%
2, temperature is 1070 ~ 1080 DEG C, and the time is 5 ~ 20 min.
9. the preparation method of AlN ceramic bonded copper base according to claim 8, is characterized in that: in described step S4, temperature is 1075 DEG C, and the time is 15 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410010989.4A CN103819214B (en) | 2014-01-10 | 2014-01-10 | AlN ceramic bonded copper substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410010989.4A CN103819214B (en) | 2014-01-10 | 2014-01-10 | AlN ceramic bonded copper substrate and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103819214A CN103819214A (en) | 2014-05-28 |
| CN103819214B true CN103819214B (en) | 2015-04-01 |
Family
ID=50754553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410010989.4A Active CN103819214B (en) | 2014-01-10 | 2014-01-10 | AlN ceramic bonded copper substrate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103819214B (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104362099A (en) * | 2014-09-17 | 2015-02-18 | 上海申和热磁电子有限公司 | Manufacturing method of high-heat-conductivity copper-clad ceramic substrate |
| CN104402488B (en) * | 2014-11-13 | 2016-03-02 | 合肥圣达电子科技实业公司 | Cover the preprocess method of copper aluminium nitride substrate |
| DE102015224464A1 (en) * | 2015-12-07 | 2017-06-08 | Aurubis Stolberg Gmbh & Co. Kg | Copper-ceramic substrate, copper semi-finished product for producing a copper-ceramic substrate and method for producing a copper-ceramic substrate |
| CN105753495B (en) * | 2016-01-26 | 2018-07-06 | 深圳市柳鑫实业股份有限公司 | A kind of ceramic substrate is fired with copper foil method for pre-oxidizing |
| EP3210956B1 (en) * | 2016-02-26 | 2018-04-11 | Heraeus Deutschland GmbH & Co. KG | Copper ceramic composite |
| CN108249948B (en) * | 2016-12-29 | 2020-10-20 | 比亚迪股份有限公司 | Aluminum nitride ceramic and preparation method and application thereof |
| CN108264371A (en) * | 2016-12-30 | 2018-07-10 | 南京中江新材料科技有限公司 | A kind of Zirconia reinforced alumina ceramic direct copper base plate preparation method |
| KR102030688B1 (en) * | 2017-01-17 | 2019-10-10 | 주식회사 케이씨씨 | Ceramic circuit board and method of manufacturing the same |
| CN107556060B (en) * | 2017-09-04 | 2021-01-01 | 福建华清电子材料科技有限公司 | Method for metalizing aluminum nitride ceramic plate |
| CN109336635A (en) * | 2018-12-06 | 2019-02-15 | 邢台职业技术学院 | A kind of aluminium nitride ceramics material and preparation method thereof |
| CN111848226B (en) * | 2019-04-24 | 2022-03-25 | 成都大学 | Nano metal layer ceramic substrate and manufacturing method thereof |
| CN111908924B (en) * | 2020-07-22 | 2022-02-18 | 江苏富乐华半导体科技股份有限公司 | Silicon nitride ceramic chip interface modification method and copper-clad ceramic substrate preparation method |
| CN114230359B (en) * | 2020-09-09 | 2023-03-14 | 比亚迪股份有限公司 | Ceramic copper-clad plate and preparation method thereof |
| CN112271139A (en) * | 2020-11-16 | 2021-01-26 | 深圳思睿辰新材料有限公司 | Method for manufacturing copper-clad nitride ceramic substrate |
| CN112608165B (en) * | 2020-12-17 | 2022-09-23 | 东南大学 | Method for coating copper on surface of aluminum nitride ceramic substrate |
| CN112624788B (en) * | 2020-12-17 | 2022-09-23 | 东南大学 | Method for quickly coating copper on surface of aluminum nitride ceramic |
| CN116655399A (en) * | 2023-05-22 | 2023-08-29 | 合肥圣达电子科技实业有限公司 | Aluminum nitride powder slurry and method for improving reliability of packaging shell |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101747073B (en) * | 2008-12-04 | 2012-05-30 | 赫克斯科技股份有限公司 | Manufacturing method of copper foil and ceramic composite board |
| CN102206098B (en) * | 2010-03-30 | 2013-04-10 | 比亚迪股份有限公司 | Ceramic copper-clad substrate and preparation method thereof |
| CN102208371B (en) * | 2010-03-31 | 2012-11-21 | 比亚迪股份有限公司 | Aluminium nitride ceramic copper-clad substrate and preparation method thereof |
-
2014
- 2014-01-10 CN CN201410010989.4A patent/CN103819214B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103819214A (en) | 2014-05-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103819214B (en) | AlN ceramic bonded copper substrate and preparation method thereof | |
| CN102208371B (en) | Aluminium nitride ceramic copper-clad substrate and preparation method thereof | |
| CN102339758B (en) | Method for manufacturing copper-ceramic substrate by adopting low-temperature bonding | |
| CN104409425B (en) | High heat conduction silicon nitride ceramics copper-clad plate and preparation method thereof | |
| CN103762181B (en) | Aluminium nitride covers the preparation method of copper ceramic substrate | |
| TWI619207B (en) | Bonded body, power module substrate, power module and method of producing bonded body | |
| US9831157B2 (en) | Method of attaching an electronic part to a copper plate having a surface roughness | |
| CN104064478B (en) | A kind of manufacture method of copper/aluminium nitride ceramics composite heat-conducting substrate | |
| CN109136848B (en) | Method for connecting aluminum nitride ceramic plate and metal based on PVD (physical vapor deposition) deposition method | |
| CN102206098A (en) | Ceramic copper-clad substrate and preparation method thereof | |
| JP2013018190A (en) | Laminate and method for producing the same | |
| JP2009504547A (en) | Metal ceramic substrate | |
| CN102452843B (en) | Aluminum oxide ceramics copper-clad plate and preparation method thereof | |
| TWI642645B (en) | Method of producing bonded body, method of producing power module substrate | |
| CN109608221A (en) | A kind of preparation method of aluminium nitride ceramic copper-clad substrate | |
| CN104362099A (en) | Manufacturing method of high-heat-conductivity copper-clad ceramic substrate | |
| TWI512150B (en) | Preparation of copper - clad copper - clad copper clad copper | |
| CN102409299B (en) | Preparation method of oxide ceramic sputtering target | |
| Wei et al. | Comparative studies on microstructures, strengths and reliabilities of two types of AlN direct bonding copper substrates | |
| CN102452844B (en) | Aluminum nitride aluminum-coated base plate and preparation method thereof | |
| CN106537580A (en) | Ceramic circuit board and method for producing same | |
| JP2015503500A (en) | Method for manufacturing DCB substrate | |
| JP2019509237A (en) | Thick film paste intervening ceramics joined by metal or metal hybrid foil | |
| RU2558323C1 (en) | Method of metallisation of substrate from aluminium-nitride ceramics | |
| JP5691901B2 (en) | Power module manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: AlN ceramic bonded copper substrate and preparation method thereof Effective date of registration: 20200302 Granted publication date: 20150401 Pledgee: Bank of Nanjing Co., Ltd. Jiangning sub branch Pledgor: Nanjing Zhongjiang New Material Technology Co., Ltd. Registration number: Y2020980000399 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220225 Granted publication date: 20150401 Pledgee: Bank of Nanjing Co.,Ltd. Jiangning sub branch Pledgor: NANJING ZHONGJIANG NEW MATERIAL TECHNOLOGY Co.,Ltd. Registration number: Y2020980000399 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |