JP2003297562A - Vapor deposition method - Google Patents

Vapor deposition method

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JP2003297562A
JP2003297562A JP2002095992A JP2002095992A JP2003297562A JP 2003297562 A JP2003297562 A JP 2003297562A JP 2002095992 A JP2002095992 A JP 2002095992A JP 2002095992 A JP2002095992 A JP 2002095992A JP 2003297562 A JP2003297562 A JP 2003297562A
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deposition
substrate
mask
vapor deposition
method
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Ryuji Nishikawa
龍司 西川
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Sanyo Electric Co Ltd
三洋電機株式会社
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Priority to JP2002095992A priority Critical patent/JP2003297562A/en
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Abstract

PROBLEM TO BE SOLVED: To suppress deviation of dimensions due to vapor deposition mask, degradation of machining precision, and thermal expansion.
SOLUTION: The size of a shadow mask 200 is molded smaller than the glass substrate 201. And the shadow mask 200 and a vapor deposition source 202 that is arranged opposed to it are fixed to the vacuum chamber not shown in the figure, and the glass substrate 201 is moved along the shadow mask 200 by a moving mechanism. The organic EL vapor deposition material evaporated from the vapor deposition source 202 is deposited on the glass substrate 201 and a desired vapor deposition pattern is formed on the whole face of the glass substrate 201.
COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】 【0001】 【発明の属する技術分野】本発明は、本発明は蒸着方法に関し、特に基板と蒸着マスクとを対向させ、蒸着源から、前記蒸着マスクに設けられた開口部を通して前記基板の表面に蒸着材料を蒸着してパターン形成を行う蒸着方法に関する。 BACKGROUND OF THE INVENTION [0001] [Technical Field of the Invention The present invention, the present invention relates to deposition methods, in particular the substrate and the deposition mask are opposed, from the evaporation source opening provided in the deposition mask It relates deposition method to form a pattern by depositing a deposition material on a surface of the substrate through the parts. 【0002】 【従来の技術】近年、有機エレクトロルミネッセンス(Electro Luminescence:以下、「有機EL」と称する。)素子を用いた有機EL表示装置が、CRTやLC [0002] In recent years, organic electroluminescent (Electro Luminescence:. Hereinafter referred to as "organic EL") organic EL display device using the element, CRT or LC
Dに代わる表示装置として注目されており、例えば、そのEL素子を駆動させるスイッチング素子として薄膜トランジスタ(Thin Film Transistor:以下、「TFT」 Has attracted attention as a display device in place of D, for example, a thin film transistor as a switching element for driving the EL elements (Thin Film Transistor: hereinafter, "TFT"
と称する。 It referred to. )を備えたEL表示装置の研究開発も進められている。 ) Research and development of the EL display device equipped with are also underway. 【0003】有機EL素子のホール輸送層、発光層、電子輸送層に用いられる有機EL材料は、耐溶剤性が低く、水分にも弱いという特性があるため、半導体プロセスにおけるフォトリソグラフィ技術を利用することができない。 [0003] hole transport layer of the organic EL element, light emitting layer, an organic EL material for the electron transport layer, solvent resistance is low, because of the weak that the characteristics in moisture, utilizing photolithographic techniques in semiconductor processing it can not be. そこで、いわゆるシャドウマスクを用いた蒸着により有機EL素子のホール輸送層、発光層、電子輸送層のパターン形成を行っていた。 Therefore, the hole-transporting layer of the organic EL device by vapor deposition using a so-called shadow mask, the light-emitting layer had been patterned to form the ETL. 【0004】次に、係る有機EL材料の蒸着によるパターン形成方法について図6〜図9を参照しながら説明する。 [0004] will be described below with reference to FIGS. 6-9 pattern formation method by vapor deposition of an organic EL material in accordance. まず、図6おいて、100は真空蒸着装置、101 First, FIG. 6 Oite, 100 vacuum deposition apparatus, 101
は真空蒸着装置100に併設された排気系、110は真空蒸着装置のチャンバー内に設置された支持台であり、 An exhaust system provided together in a vacuum deposition apparatus 100, 110 is a support base, which is placed in a chamber of a vacuum deposition apparatus,
この支持台110上に、ニッケル(Ni)やインバー合金 On the support base 110, nickel (Ni) or Invar alloy
(Fe 64 Ni 36 )等の磁性材料から成るシャドウマスク(蒸着マスク)111が載置される。 (Fe 64 Ni 36) the shadow mask (a deposition mask) 111 made of a magnetic material or the like is placed. シャドウマスク1 Shadow mask 1
11の所定の位置には開口部112が複数設けられている。 The predetermined position of the 11 openings 112 is provided with a plurality. 【0005】支持台110上に載置されるシャドウマスク111上にはマグネット120が上下方向に可動に配置されている。 [0005] Magnet 120 is formed on the shadow mask 111 is placed on the support table 110 is arranged movable in the vertical direction. 130はマグネット120とシャドウマスク111の間に介挿される、マザーガラスと呼ばれるガラス基板あり、このガラス基板上に有機EL素子が形成される。 130 is interposed between the magnet 120 and the shadow mask 111, there glass substrate called mother glass, organic EL elements are formed on the glass substrate. 140はシャドウマスク111の下方に配置され、シャドウマスク111に沿って左右方向に移動可能な蒸着源である。 140 is disposed below the shadow mask 111, a deposition source which is movable in the left-right direction along the shadow mask 111. 【0006】図6において、いま真空蒸着装置100のチャンバー内は排気系101によって真空状態に保たれているとする。 [0006] In FIG. 6, now in a chamber of a vacuum deposition apparatus 100 and is maintained in a vacuum state by an exhaust system 101. そこで、ガラス基板130は不図示の搬送機構によってマグネット120とシャドウマスク11 Therefore, the glass substrate 130 is a magnet 120 and the shadow mask 11 by a transport mechanism (not shown)
1の間に介挿される。 It is interposed between the 1. そして図7に示すように、ガラス基板130は搬送機構によりシャドウマスク111上に載置される。 Then, as shown in FIG. 7, the glass substrate 130 is placed on the shadow mask 111 by the transfer mechanism. 【0007】次に、図8に示すように、マグネット12 [0007] Next, as shown in FIG. 8, the magnet 12
0をガラス基板130の上面と接触する位置まで下方向に移動させる。 0 is moved downward to a position in contact with the upper surface of the glass substrate 130. すると、シャドウマスク111はマグネット120の磁力を受けてガラス基板130の下面、すなわちパターン形成面に密着される。 Then, the shadow mask 111 is in close contact by receiving a magnetic force of the magnet 120 the lower surface of the glass substrate 130, that is, the pattern forming surface. 【0008】次に、図9に示すように、蒸着源140を不図示の移動機構によりガラス基板130左端から右端まで水平方向に移動させながら、シャドウマスク111 [0008] Next, as shown in FIG. 9, while moving horizontally from the left glass substrate 130 to the right by a movement mechanism a deposition source 140, a shadow mask 111
の開口部112を通してガラス基板130の表面に上記有機EL材料、陰極65の材料(例えばアルミニウム) The organic EL material on the surface of the glass substrate 130 through the opening 112 of the cathode 65 material (e.g., aluminum)
の蒸着を行う。 Performing a deposition. ここで、蒸着源140は細長く延びたるつぼによって構成され、るつぼ内に収納された蒸着材料はヒーターによって加熱され蒸発される。 Here, the deposition source 140 is constituted by an elongated extending crucible, deposition material housed in the crucible is heated by a heater evaporation. 【0009】蒸着が終了すると、マグネット120は上方に移動させる。 [0009] deposition is completed, the magnet 120 moves upward. そして、ガラス基板130は搬送機構によりシャドウマスク111から持ち上げられ、次工程の作業位置まで搬送される。 Then, the glass substrate 130 is lifted from the shadow mask 111 by the transfer mechanism, and is conveyed to the working position of the next step. これにより、有機EL素子60のパターン形成を行うことができる。 Thus, it is possible to perform patterning of the organic EL element 60. 【0010】 【発明が解決しようとする課題】近年、ガラス基板13 [Problems that the Invention is to Solve] [0010] In recent years, the glass substrate 13
0の大きさは例えば300mm×400mm程度あり、 The size of 0 is, for example, about 300 mm × 400 mm,
さらに大型化する傾向にある。 In addition there is a tendency to increase the size of. ところが、シャドウマスク111の面積はガラス基板130の面積と同じであったため、その大型化に伴い、シャドウマスク111のエッチング加工あるいはメッキ加工による加工精度が悪くなり、また熱膨張により寸法に狂いが生じるため、蒸着パターンの精度が悪くなるという問題を生じていた。 However, since the area of ​​the shadow mask 111 was the same as the area of ​​the glass substrate 130, along with its size, machining accuracy is deteriorated due to etching or plating of the shadow mask 111, also deviation occurs in dimension due to thermal expansion Therefore, it has arisen the problem that the accuracy of deposition pattern is deteriorated. 【0011】 【課題を解決するための手段】本発明は、上述した従来技術の課題に鑑みてなされものであり、基板と蒸着マスクとを対向させ、蒸着源から、前記蒸着マスクに設けられた開口部を通して前記基板の表面に蒸着材料を蒸着してパターン形成を行う蒸着方法において、前記蒸着マスクの面積が前記基板の面積より小さく、前記基板を前記蒸着マスクに対して一方向に相対的に移動させながら蒸着を行うことを特徴とする。 [0011] The present invention SUMMARY OF] is one made in view of the problems in the conventional technology, the substrate and the deposition mask are opposed, from the deposition source, provided in the deposition mask in the deposition method of performing deposition to patterned deposition material on the surface of the substrate through the opening, the area of ​​the vapor deposition mask is smaller than the area of ​​the substrate, relatively to the direction of the substrate relative to the deposition mask and performing vapor deposition while moving the. 【0012】本発明によれば、蒸着マスクの面積が被蒸着基板の面積より小さく加工成形されているので、加工精度の悪化、熱膨張による寸法の狂いが抑制される。 According to the present invention, the area of ​​the deposition mask because it is less processed molded than the area of ​​the deposition target substrate, deterioration of machining accuracy, deviation of dimension due to thermal expansion is suppressed. また、基板を前記蒸着マスクに対して一方向に相対的に移動させながら蒸着を行うことで、基板の全体に渡って蒸着パターンの形成を行うことができる。 Further, by performing deposition while relatively moving in one direction of the substrate relative to the deposition mask, it is possible to form the deposition pattern over the entire substrate. 【0013】 【発明の実施の形態】本発明の実施形態に係る蒸着方法について図面を参照しながら説明する。 [0013] deposition method according to an embodiment of the embodiment of the present invention will be described with reference to the drawings. 図1は本実施形態の蒸着方法を示す斜視図であり、図1のガラス基板2 Figure 1 is a perspective view showing a method of depositing this embodiment, the glass substrate 2 in FIG. 1
01の長手方向に沿う断面図である。 01 is a sectional view taken along the longitudinal direction of. 【0014】真空チャンバー内で、シャドウマスク20 [0014] In a vacuum chamber, the shadow mask 20
0(蒸着マスク)はガラス基板201に対向するように、配置されている。 0 (deposition mask), as opposed to the glass substrate 201 is disposed. またシャドウマスク200に対向して蒸着源202が配置されている。 The deposition source 202 is disposed opposite to the shadow mask 200. 蒸着源202は長細い箱の形状を呈した「るつぼ」によって構成され、この「るつぼ」内に収納された有機EL蒸着材料はヒーターによって加熱され蒸発される。 Deposition source 202 is composed of a "crucible" as exhibited elongated box-shape, the "crucible" organic EL evaporation materials housed in is heated by the heater evaporation. 【0015】シャドウマスク200は、所望の蒸着パターンに対応して複数の開口部203を有している。 The shadow mask 200 has a plurality of openings 203 corresponding to the desired deposition pattern. この開口部203のパターンは例えばエッチング処理やメッキ処理により加工される。 Pattern of the opening 203 is processed by, for example, etching treatment or plating treatment. このシャドウマスク200 The shadow mask 200
は、ガラス基板201よりも小さい面積に成形されている。 It is formed in a smaller area than the glass substrate 201. 【0016】例えば、ガラス基板201のサイズが30 [0016] For example, the size of the glass substrate 201 30
0mm×400mmである場合、シャドウマスク200 If it is 0mm × 400mm, the shadow mask 200
のサイズは300mm×20mm程度が適当である。 The size is appropriate about 300mm × 20mm. これにより、シャドウマスク200の加工精度が良くなり、また熱膨張の影響を小さくすることができるので、 Thus, better processing accuracy of the shadow mask 200, also it is possible to reduce the influence of thermal expansion,
結果として蒸着パターンの形成精度を向上することができる。 It can be consequently improved formation accuracy of the deposition pattern. 【0017】また、係る構成に加えて、ガラス基板20 Further, in addition to the configuration according a glass substrate 20
1をシャドウマスク200に対して一方向に移動させることで、ガラス基板201の全面に蒸着パターンを形成することができる。 1 is moved in one direction with respect to the shadow mask 200 can be formed on the entire surface deposition patterns of the glass substrate 201. この場合、シャドウマスク200及び対向配置された蒸着源202は不図示の真空チャンバーに対して固定されており、ガラス基板201を移動機構によりシャドウマスク200に沿って移動させる。 In this case, the deposition source 202 shadow mask 200 and facing are fixed to the vacuum chamber (not shown) to move the glass substrate 201 along the shadow mask 200 by the moving mechanism. 蒸着源202から蒸発された有機EL蒸着材料は、シャドウマスク200の開口部203を通して、ガラス基板2 The organic EL vapor deposition material evaporated from the deposition source 202, through the openings 203 of the shadow mask 200, the glass substrate 2
01上に蒸着され、所望の蒸着パターンが形成される。 01 is deposited on the desired deposition pattern. 【0018】ガラス基板201の移動方法については、 [0018] For the method of moving the glass substrate 201,
蒸着源202をオンさせた状態でシャドウマスク200 The shadow mask 200 in a state of being turned on a deposition source 202
に対してリニアに移動させる方法と、移動・停止を繰り返す方法が考えられる。 A method of moving linearly with respect to a method of repeated moving and stopping are considered. 後者の移動方法の場合には、ガラス基板201を所定位置に停止させ、蒸着源202をオンさせて蒸着を行い、移動中については蒸着源202 In the latter case the moving method stops the glass substrate 201 at a predetermined position by vapor deposition to turn on the deposition source 202, the deposition source for moving 202
をオフさせて、蒸着を止める。 The turns off, stop the deposition. 【0019】また、ガラス基板201の移動時に、ガラス基板201とシャドウマスク200とを近接させ、かつその間隔を一定に保つために、ガラス基板201側にガイド用のピラー204を形成しておくと良い。 Further, when moving the glass substrate 201, it is close to the glass substrate 201 and the shadow mask 200, and to maintain the interval constant, idea to form a pillar 204 for guiding the glass substrate 201 side good. ガイド用のピラー204は、ホトレジスト材料をパターニングして形成することができる。 Pillar 204 of guide can be formed by patterning a photoresist material. その高さは4μ程度である。 Its height is about 4μ. 【0020】具体的は、図3に示すように、ガラス基板201上の有機EL素子領域210を除く領域、例えば、隣接する有機EL素子領域210、210の間にストライプ状のピラー204Aを形成してもよいし、有機EL素子領域210の周囲にリング状のピラー204B [0020] Specifically, as shown in FIG. 3, the region excluding the organic EL element region 210 on the glass substrate 201, for example, a stripe-shaped pillar 204A is formed between the organic EL element regions 210 and 210 adjacent it may be, around the organic EL element region 210 ring-shaped pillar 204B
を形成してもよい。 It may be formed. またガイド用のピラー204は点状に形成しても良い。 The pillar 204 of the guide may be formed in dots. 【0021】ガイド用のピラー204は、蒸着源202 [0021] The pillar 204 for the guide, the deposition source 202
からの蒸着が等方的である場合は必要であるが、異方性が強い場合には不要である。 It is necessary if the deposition is isotropic is from, when the anisotropy is strong is not required. その場合には、ガラス基板201とシャドウマスク200との間に適当なギャップが存在していればよい。 In that case, it is sufficient that there is a suitable gap between the glass substrate 201 and the shadow mask 200. 【0022】また、上記実施形態は、シャドウマスク2 [0022] In addition, the above-described embodiment, the shadow mask 2
00及び蒸着源202を固定し、ガラス基板201を移動させているが、これに限定されることはない。 00 and an evaporation source 202 was fixed, but moves the glass substrate 201 is not limited thereto. 反対に、ガラス基板201を固定し、シャドウマスク200 Conversely, to fix the glass substrate 201, the shadow mask 200
及び蒸着源202をガラス基板201に対して移動させてもよい。 And a deposition source 202 may be moved relative to the glass substrate 201. 【0023】次に、本発明の蒸着方法が適用される有機EL表示装置の構造について説明する。 [0023] Next, the structure of the organic EL display device in which the method of depositing the invention is applied. 【0024】図4に有機EL表示装置の表示画素付近を示す平面図を示し、図5(a)に図4中のA−A線に沿った断面図を示し、図5(b)に図4中のB−B線に沿った断面図を示す。 [0024] FIG. 4 shows a plan view showing a display near the pixel of the organic EL display device, a cross-sectional view along the line A-A in FIG. 4 in FIG. 5 (a), FIG. In FIG. 5 (b) It shows a cross-sectional view taken along line B-B in 4. 【0025】図4及び図5に示すように、ゲート信号線51とドレイン信号線52とに囲まれた領域に表示画素115が形成されており、マトリクス状に配置されている。 As shown in FIGS. 4 and 5, the display pixel 115 in the area surrounded by the gate signal line 51 and the drain signal lines 52 are formed, they are arranged in a matrix. 【0026】この表示画素115には、自発光素子である有機EL素子60と、この有機EL素子60に電流を供給するタイミングを制御するスイッチング用TFT3 [0026] The display pixel 115, the organic EL element 60 is a self-luminous element, switching to control the timing of supplying a current to the organic EL device 60 TFT 3
0と、有機EL素子60に電流を供給する駆動用TFT 0, driving TFT for supplying current to the organic EL element 60
40と、保持容量とが配置されている。 40, and the storage capacitor are arranged. なお、有機EL In addition, organic EL
素子60は、第1の電極である陽極61と発光材料からなる発光素子層と、第2の電極である陰極65とから成っている。 Element 60 includes a light emitting element layer and the anode 61 made of light-emitting material is a first electrode, consists cathode 65. is a second electrode. 【0027】即ち、両信号線51,52の交点付近にはスイッチング用TFTである第1のTFT30が備えられており、そのTFT30のソース33sは保持容量電極線54との間で容量をなす容量電極55を兼ねるとともに、EL素子駆動用TFTである第2のTFT40のゲート41に接続されており、第2のTFTのソース4 [0027] That is, in the vicinity of the intersection of both signal lines 51 and 52 is provided with the first TFT30 is a switching TFT, and the capacitance forming a capacitance between the source 33s the storage capacitor electrode line 54 of the TFT30 together serve as the electrode 55 is connected to the gate 41 of the second TFT40 an EL element driving TFT, the source 4 of the second TFT
3sは有機EL素子60の陽極61に接続され、他方のドレイン43dは有機EL素子60に供給される電流源である駆動電源線53に接続されている。 3s is connected to the anode 61 of the organic EL element 60, the other drain 43d is connected to a driving power supply line 53 is a current source which is supplied to the organic EL element 60. 【0028】また、ゲート信号線51と並行に保持容量電極線54が配置されている。 Further, the holding capacitance electrode line 54 in parallel with the gate signal line 51 is disposed. この保持容量電極線54 The storage capacitor electrode line 54
はクロム等から成っており、ゲート絶縁膜12を介してTFTのソース33sと接続された容量電極55との間で電荷を蓄積して容量を成している。 Is at an capacity by storing charge between the capacitor electrode 55 connected to the source 33s of the TFT via a by which the gate insulating film 12 made of chromium or the like. この保持容量56 The holding capacity 56
は、第2のTFT40のゲート電極41に印加される電圧を保持するために設けられている。 It is provided to hold a voltage applied to the gate electrode 41 of the second TFT 40. 【0029】図5に示すように、有機EL表示装置は、 As shown in FIG. 5, the organic EL display device,
ガラスや合成樹脂などから成る基板又は導電性を有する基板あるいは半導体基板等の基板10上に、TFT及び有機EL素子を順に積層形成して成る。 On the substrate 10, such as a substrate or a semiconductor substrate having a substrate or a conductive made of glass or synthetic resin, formed by laminating forming a TFT and the organic EL element in order. ただし、基板1 However, the substrate 1
0として導電性を有する基板及び半導体基板を用いる場合には、これらの基板10上にSiO 2やSiNなどの絶縁膜を形成した上に第1、第2のTFT及び有機EL In the case of using a substrate and a semiconductor substrate having conductivity as 0, first, second TFT and an organic EL on forming an insulating film such as SiO 2 or SiN on these substrates 10
素子を形成する。 To form an element. いずれのTFTともに、ゲート電極がゲート絶縁膜を介して能動層の上方にあるいわゆるトップゲート構造である。 Both any TFT, a so-called top-gate structure above the active layer is a gate electrode through a gate insulating film. 【0030】まず、スイッチング用TFTである第1のTFT30について説明する。 [0030] First, a description will be given of a first TFT30 a switching TFT. 【0031】図5(a)に示すように、石英ガラス、無アルカリガラス等からなる絶縁性基板10上に、非晶質シリコン膜(以下、「a−Si膜」と称する。)をCV As shown in FIG. 5 (a), quartz glass, on the insulating substrate 10 made of alkali-free glass or the like, an amorphous silicon film (hereinafter, referred to as "a-Si film".) The CV
D法等にて成膜し、そのa−Si膜にレーザ光を照射して溶融再結晶化させて多結晶シリコン膜(以下、「p− Was deposited by D method, the a-Si film is irradiated by melt recrystallized polycrystalline silicon film a laser beam (hereinafter, "p-
Si膜」と称する。 It referred to as the Si film ". )とし、これを能動層33とする。 ), And this is the active layer 33.
その上に、SiO 2膜、SiN膜の単層あるいは積層体をゲート絶縁膜32として形成する。 Is formed thereon SiO 2 film, a single layer or a laminate of the SiN film as the gate insulating film 32. 更にその上に、C Further, on the, C
r、Moなどの高融点金属からなるゲート電極31を兼ねたゲート信号線51及びAlから成るドレイン信号線52を備えており、有機EL素子の駆動電源でありAl r, it is provided with a drain signal line 52 made of the gate signal line 51 and Al also functions as a gate electrode 31 made of a refractory metal such as Mo, a driving power of the organic EL element Al
から成る駆動電源線53が配置されている。 Driving power supply line 53 is arranged made of. 【0032】そして、ゲート絶縁膜32及び能動層33 [0032] Then, the gate insulating film 32 and the active layer 33
上の全面には、SiO 2膜、SiN膜及びSiO 2膜の順に積層された層間絶縁膜15が形成されており、ドレイン33dに対応して設けたコンタクトホールにAl等の金属を充填したドレイン電極36が設けられ、更に全面に有機樹脂から成り表面を平坦にする平坦化絶縁膜17 The entire surface of the upper and filled SiO 2 film, an interlayer insulating film 15 are laminated in this order on the SiN film and the SiO 2 film and is formed, a metal such as Al in a contact hole provided corresponding to the drain 33d drain electrode 36 is provided, the planarization insulating film to flatten the surface consists the entire surface in the organic resin 17
が形成されている。 There has been formed. 【0033】次に、有機EL素子の駆動用TFTである第2のTFT40について説明する。 Next, a description will be given of the second TFT40 to the driving TFT of the organic EL element. 図5(b)に示すように、石英ガラス、無アルカリガラス等からなる絶縁性基板10上に、a−Si膜にレーザ光を照射して多結晶化してなる能動層43、ゲート絶縁膜12、及びC FIG 5 (b) as shown in the quartz glass, on an insulating substrate 10 made of alkali-free glass or the like, a-Si film formed by polycrystalline by irradiating a laser beam to the active layer 43, a gate insulating film 12 , and C
r、Moなどの高融点金属からなるゲート電極41が順に形成されており、その能動層43には、チャネル43 r, and a gate electrode 41 made of a refractory metal such as Mo is formed in this order, in that the active layer 43, channels 43
cと、このチャネル43cの両側にソース43s及びドレイン43dが設けられている。 And c, a source 43s and a drain 43d are provided on both sides of the channel 43c. そして、ゲート絶縁膜12及び能動層43上の全面に、SiO 2膜、SiN膜及びSiO 2膜の順に積層された層間絶縁膜15を形成し、ドレイン43dに対応して設けたコンタクトホールにAl等の金属を充填して駆動電源に接続された駆動電源線53が配置されている。 Then, on the entire surface of the gate insulating film 12 and the active layer 43, SiO 2 film, an interlayer insulating film 15 are laminated in this order on the SiN film and the SiO 2 film, a contact hole provided corresponding to the drain 43d Al driving power supply line 53 to the metal was connected to the driving power source filling the like are arranged. 更に全面に例えば有機樹脂から成り表面を平坦にする平坦化絶縁膜17を備えている。 Furthermore, a planarization insulating film 17 to flatten the made surface from the entire surface, for example an organic resin. そして、その平坦化絶縁膜17のソース43sに対応した位置にコンタクトホールを形成し、このコンタクトホールを介してソース43sとコンタクトしたITO Then, the contact holes are formed in the position corresponding to the source 43s of the planarization insulating film 17, and contact with the source 43s through this contact hole ITO
から成る透明電極、即ち有機EL素子の陽極61を平坦化絶縁膜17上に設けている。 Transparent electrodes made of, that is, provided the anode 61 of the organic EL element on the planarization insulating film 17. この陽極61は各表示画素ごとに島状に分離形成されている。 The anode 61 is separately formed in an island shape for each display pixel. 【0034】有機EL素子60は、一般的な構造であり、ITO(Indium Tin Oxide)等の透明電極から成る陽極61、MTDATA(4,4-bis(3-methylphenylphen The organic EL element 60 is a general structure, an anode 61 made of a transparent electrode of ITO (Indium Tin Oxide) or the like, MTDATA (4,4-bis (3-methylphenylphen
ylamino)biphenyl)から成る第1ホール輸送層、TPD The first hole transport layer made of ylamino) biphenyl), TPD
(4,4,4-tris(3-methylphenylphenylamino)triphenylan (4,4,4-tris (3-methylphenylphenylamino) triphenylan
ine)からなる第2ホール輸送層から成るホール輸送層62、キナクリドン(Quinacridone)誘導体を含むBe Hole transport layer 62 made of a second hole transport layer made of ine), Be containing quinacridone (Quinacridone) derivatives
bq2(10-ベンゾ〔h〕キノリノール−ベリリウム錯体)から成る発光層63、及びBebq2から成る電子輸送層64、マグネシウム・インジウム合金もしくはアルミニウム、もしくはアルミニウム合金から成る陰極6 BQ2 (10- benzo [h] quinolinol - beryllium complex) electron transport layer 64 made of the light-emitting layer 63, and Bebq2 consisting cathode 6 made of magnesium-indium alloy, aluminum or aluminum alloy
5が、この順番で積層形成された構造である。 5 is a laminated structure formed in this order. 【0035】有機EL素子60は、陽極61から注入されたホールと、陰極65から注入された電子とが発光層の内部で再結合し、発光層を形成する有機分子を励起して励起子が生じる。 The organic EL element 60, holes injected from the anode 61 and electrons injected from the cathode 65 are recombined in the light emitting layer, excitons excite organic molecules forming the emissive layer occur. この励起子が放射失活する過程で発光層から光が放たれ、この光が透明な陽極61から透明絶縁基板を介して外部へ放出されて発光する。 The excitons emitted light from the light emitting layer in the process of radiative deactivation, this light to emit light is emitted to the outside through the transparent insulating substrate from the transparent anode 61. 【0036】上述した有機EL素子60のホール輸送層62、発光層63、電子輸送層64の形成について、本発明の蒸着方法を適用することができる。 The hole transport layer 62 of the organic EL device 60 described above, the light emitting layer 63, the formation of the electron transport layer 64, it is possible to apply a method of depositing the invention. 【0037】 【発明の効果】本発明の蒸着方法によれば、蒸着マスクが被蒸着基板より小さく加工成形されているので、加工精度の悪化、熱膨張による寸法の狂いが抑制される。 [0037] According to the method of deposition the present invention, deposition mask because it is less processed molded from the deposition substrate, deterioration of machining accuracy, deviation of dimension due to thermal expansion is suppressed. また、基板を前記蒸着マスクに対して一方向に相対的に移動させながら蒸着を行うことで、基板の全体に渡って蒸着パターンの形成を行うことができる。 Further, by performing deposition while relatively moving in one direction of the substrate relative to the deposition mask, it is possible to form the deposition pattern over the entire substrate.

【図面の簡単な説明】 【図1】本発明の実施形態に係る蒸着方法を説明する斜視図である。 Is a perspective view illustrating the deposition method according to an embodiment of the BRIEF DESCRIPTION OF THE DRAWINGS [Figure 1] present invention. 【図2】本発明の実施形態に係る蒸着方法を説明する断面図である。 2 is a cross-sectional view illustrating the deposition method according to an embodiment of the present invention. 【図3】本発明の実施形態に係る蒸着方法を説明する斜視図である。 3 is a perspective view illustrating a deposition method according to an embodiment of the present invention. 【図4】有機EL表示装置の平面図である。 4 is a plan view of an organic EL display device. 【図5】図4中のB−B線に沿った断面図である。 5 is a cross-sectional view taken along the line B-B in FIG. 【図6】有機EL材料の蒸着によるパターン形成方法を示す図である。 6 is a diagram illustrating a pattern formation method by vapor deposition of organic EL materials. 【図7】有機EL材料の蒸着によるパターン形成方法を示す図である。 7 is a diagram illustrating a pattern formation method by vapor deposition of organic EL materials. 【図8】有機EL材料の蒸着によるパターン形成方法を示す図である。 8 is a diagram illustrating a pattern formation method by vapor deposition of organic EL materials. 【図9】有機EL材料の蒸着によるパターン形成方法を示す図である。 9 is a diagram illustrating a pattern formation method by vapor deposition of organic EL materials. 【符号の説明】 200 シャドウマスク 201 ガラス基板 2 [Description of the code] 200 shadow mask 201 glass substrate 2
02 蒸着源203 開口部 204 ガイド用のピラー 21 02 evaporation source 203 openings 204 guide pillar 21
0 有機EL素子領域 0 organic EL element area

Claims (1)

  1. 【特許請求の範囲】 【請求項1】 基板と蒸着マスクとを対向させ、蒸着源から、前記蒸着マスクに設けられた開口部を通して前記基板の表面に蒸着材料を蒸着してパターン形成を行う蒸着方法において、 前記蒸着マスクの面積が前記基板の面積より小さく、前記基板を前記蒸着マスクに対して一方向に相対的に移動させながら蒸着を行うことを特徴とする蒸着方法。 Are opposed to Patent Claims 1. A substrate and a deposition mask, the deposition of the deposition source, vapor deposition is performed to pattern the deposition material on the surface of the substrate through an opening provided in the deposition mask in the method, the vapor deposition method the area of ​​the deposition mask is smaller than the area of ​​the substrate, and performing deposition while relatively moving in one direction the substrate relative to the deposition mask. 【請求項2】 前記基板を前記蒸着マスクに対して連続的に移動させながら蒸着を行うことを特徴とする請求項1記載の蒸着方法。 2. A method of deposition according to claim 1, wherein the vapor deposition is performed while continuously moving the substrate relative to the deposition mask. 【請求項3】 前記基板を前記蒸着マスクに対して、停止と移動を繰り返しながら蒸着を行うことを特徴とする請求項1記載の蒸着方法。 3. For the substrate the deposition mask, a deposition method according to claim 1, wherein the vapor deposition is performed while repeatedly moving and stopping. 【請求項4】 前記基板の停止時に蒸着源をオフし、移動時に蒸着源をオンすることを特徴とする請求項3記載の蒸着方法。 4. A clear deposition source when stopping of the substrate, the vapor deposition method of claim 3, wherein turning on the deposition source during movement. 【請求項5】 前記基板の表面または前記蒸着マスクの表面にガイド用のピラーを設けたことを特徴とする請求項1記載の蒸着方法。 5. The method of deposition according to claim 1, characterized in that a pillar of the guide surface or surfaces of the deposition mask of the substrate. 【請求項6】 絶縁性基板と蒸着マスクとを対向させ、 6. A are opposed to the insulating substrate and the vapor deposition mask,
    蒸着源から、前記蒸着マスクに設けられた開口部を通して前記絶縁性基板の表面に有機EL素子材料を蒸着して、有機EL素子のパターン形成を行う蒸着方法において、 前記蒸着マスクの面積が前記絶縁性基板の面積より小さく、前記絶縁性基板を前記蒸着マスクに対して一方向に相対的に移動させながら蒸着を行うことを絶縁性特徴とする蒸着方法。 From the deposition source, and depositing an organic EL device material on the surface of the insulating substrate through an opening provided in the deposition mask, the deposition method of performing patterning of the organic EL element, the insulating area of ​​the deposition mask deposition methods for the insulating characterized in that the deposition while relatively moving in one direction smaller than the area of ​​sexual substrate, the insulating substrate to the deposition mask. 【請求項7】 前記絶縁性基板を前記蒸着マスクに対して連続的に移動させながら蒸着を行うことを特徴とする請求項6記載の蒸着方法。 7. The method of deposition according to claim 6, wherein the vapor deposition is performed while moving the insulating substrate continuously relative to the deposition mask. 【請求項8】 前記絶縁性基板を前記蒸着マスクに対して、停止と移動を繰り返しながら蒸着を行うことを特徴とする請求項6記載の蒸着方法。 8. For the insulating said evaporation mask substrate, a deposition method according to claim 6, wherein the vapor deposition is performed while repeatedly moving and stopping. 【請求項9】 前記絶縁性基板の停止時に蒸着源をオフし、移動時に蒸着源をオンすることを特徴とする請求項6記載の蒸着方法。 Wherein said insulating substrate off the evaporation source when stopping, a deposition method according to claim 6, wherein turning on the deposition source during movement. 【請求項10】 前記絶縁性基板の表面または前記蒸着マスクの表面にガイド用のピラーを設けたことを特徴とする請求項6記載の蒸着方法。 10. A method of deposition according to claim 6, wherein the provision of the pillar of the guide to the surface of the surface or the deposition mask of the insulating substrate. 【請求項11】 前記ガイド用のピラーは、前記絶縁性基板上の前記有機EL素子領域を除く領域に設けられていることを特徴とする請求項9記載の蒸着方法。 11. pillar for the guide, the vapor deposition method of claim 9, wherein the is provided in the region excluding the organic EL device region of said insulating substrate.
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