JP2003297562A - Vapor deposition method - Google Patents
Vapor deposition methodInfo
- Publication number
- JP2003297562A JP2003297562A JP2002095992A JP2002095992A JP2003297562A JP 2003297562 A JP2003297562 A JP 2003297562A JP 2002095992 A JP2002095992 A JP 2002095992A JP 2002095992 A JP2002095992 A JP 2002095992A JP 2003297562 A JP2003297562 A JP 2003297562A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- substrate
- organic
- mask
- glass substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 38
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000003754 machining Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 25
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- -1 3-methylphenylphenylamino Chemical group 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、本発明は蒸着方法
に関し、特に基板と蒸着マスクとを対向させ、蒸着源か
ら、前記蒸着マスクに設けられた開口部を通して前記基
板の表面に蒸着材料を蒸着してパターン形成を行う蒸着
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor deposition method, and in particular, a substrate and a vapor deposition mask are opposed to each other, and a vapor deposition material is deposited on the surface of the substrate from an vapor deposition source through an opening provided in the vapor deposition mask. The present invention relates to a vapor deposition method for performing vapor deposition to form a pattern.
【０００２】[0002]
【従来の技術】近年、有機エレクトロルミネッセンス
（Electro Luminescence：以下、「有機ＥＬ」と称す
る。）素子を用いた有機ＥＬ表示装置が、ＣＲＴやＬＣ
Ｄに代わる表示装置として注目されており、例えば、そ
のＥＬ素子を駆動させるスイッチング素子として薄膜ト
ランジスタ（Thin Film Transistor：以下、「ＴＦＴ」
と称する。）を備えたＥＬ表示装置の研究開発も進めら
れている。2. Description of the Related Art Recently, an organic EL display device using an organic electroluminescence (Electro Luminescence: hereinafter referred to as "organic EL") element has been used as a CRT or LC.
As a display device replacing D, attention has been paid to, for example, a thin film transistor (TFT) as a switching element for driving the EL element.
Called. ) Are also being researched and developed.
【０００３】有機ＥＬ素子のホール輸送層、発光層、電
子輸送層に用いられる有機ＥＬ材料は、耐溶剤性が低
く、水分にも弱いという特性があるため、半導体プロセ
スにおけるフォトリソグラフィ技術を利用することがで
きない。そこで、いわゆるシャドウマスクを用いた蒸着
により有機ＥＬ素子のホール輸送層、発光層、電子輸送
層のパターン形成を行っていた。Since the organic EL materials used for the hole transport layer, the light emitting layer and the electron transport layer of the organic EL device have the characteristics of low solvent resistance and weakness against moisture, the photolithography technique in the semiconductor process is used. I can't. Therefore, pattern formation of the hole transport layer, the light emitting layer, and the electron transport layer of the organic EL element is performed by vapor deposition using a so-called shadow mask.
【０００４】次に、係る有機ＥＬ材料の蒸着によるパタ
ーン形成方法について図６〜図９を参照しながら説明す
る。まず、図６おいて、１００は真空蒸着装置、１０１
は真空蒸着装置１００に併設された排気系、１１０は真
空蒸着装置のチャンバー内に設置された支持台であり、
この支持台１１０上に、ニッケル（Ni）やインバー合金
(Fｅ64Ｎｉ36)等の磁性材料から成るシャドウマスク
（蒸着マスク）１１１が載置される。シャドウマスク１
１１の所定の位置には開口部１１２が複数設けられてい
る。Next, a pattern forming method by vapor deposition of the organic EL material will be described with reference to FIGS. First, in FIG. 6, 100 is a vacuum vapor deposition apparatus, 101
Is an exhaust system attached to the vacuum vapor deposition apparatus 100, and 110 is a support stand installed in the chamber of the vacuum vapor deposition apparatus,
On this support 110, nickel (Ni) or Invar alloy
A shadow mask (vapor deposition mask) 111 made of a magnetic material such as (Fe 64 Ni 36 ) is placed. Shadow mask 1
A plurality of openings 112 are provided at predetermined positions of 11.
【０００５】支持台１１０上に載置されるシャドウマス
ク１１１上にはマグネット１２０が上下方向に可動に配
置されている。１３０はマグネット１２０とシャドウマ
スク１１１の間に介挿される、マザーガラスと呼ばれる
ガラス基板あり、このガラス基板上に有機ＥＬ素子が形
成される。１４０はシャドウマスク１１１の下方に配置
され、シャドウマスク１１１に沿って左右方向に移動可
能な蒸着源である。A magnet 120 is vertically movably arranged on a shadow mask 111 mounted on a support 110. Reference numeral 130 denotes a glass substrate called mother glass which is inserted between the magnet 120 and the shadow mask 111, and an organic EL element is formed on this glass substrate. A vapor deposition source 140 is disposed below the shadow mask 111 and is movable in the left-right direction along the shadow mask 111.
【０００６】図６において、いま真空蒸着装置１００の
チャンバー内は排気系１０１によって真空状態に保たれ
ているとする。そこで、ガラス基板１３０は不図示の搬
送機構によってマグネット１２０とシャドウマスク１１
１の間に介挿される。そして図７に示すように、ガラス
基板１３０は搬送機構によりシャドウマスク１１１上に
載置される。In FIG. 6, it is assumed that the inside of the chamber of the vacuum vapor deposition apparatus 100 is kept in a vacuum state by the exhaust system 101. Therefore, the glass substrate 130 is transferred to the magnet 120 and the shadow mask 11 by a transport mechanism (not shown).
It is inserted between 1. Then, as shown in FIG. 7, the glass substrate 130 is placed on the shadow mask 111 by the transport mechanism.
【０００７】次に、図８に示すように、マグネット１２
０をガラス基板１３０の上面と接触する位置まで下方向
に移動させる。すると、シャドウマスク１１１はマグネ
ット１２０の磁力を受けてガラス基板１３０の下面、す
なわちパターン形成面に密着される。Next, as shown in FIG.
0 is moved downward to a position where it contacts the upper surface of the glass substrate 130. Then, the shadow mask 111 receives the magnetic force of the magnet 120 and is brought into close contact with the lower surface of the glass substrate 130, that is, the pattern forming surface.
【０００８】次に、図９に示すように、蒸着源１４０を
不図示の移動機構によりガラス基板１３０左端から右端
まで水平方向に移動させながら、シャドウマスク１１１
の開口部１１２を通してガラス基板１３０の表面に上記
有機ＥＬ材料、陰極６５の材料（例えばアルミニウム）
の蒸着を行う。ここで、蒸着源１４０は細長く延びたる
つぼによって構成され、るつぼ内に収納された蒸着材料
はヒーターによって加熱され蒸発される。Next, as shown in FIG. 9, the shadow mask 111 is moved while the vapor deposition source 140 is moved horizontally from the left end to the right end of the glass substrate 130 by a moving mechanism (not shown).
The organic EL material and the material of the cathode 65 (for example, aluminum) on the surface of the glass substrate 130 through the opening 112 of
Vapor deposition is performed. Here, the vapor deposition source 140 is composed of an elongated crucible, and the vapor deposition material housed in the crucible is heated and evaporated by a heater.
【０００９】蒸着が終了すると、マグネット１２０は上
方に移動させる。そして、ガラス基板１３０は搬送機構
によりシャドウマスク１１１から持ち上げられ、次工程
の作業位置まで搬送される。これにより、有機ＥＬ素子
６０のパターン形成を行うことができる。When the vapor deposition is completed, the magnet 120 is moved upward. Then, the glass substrate 130 is lifted from the shadow mask 111 by the transfer mechanism and transferred to the work position of the next process. Thereby, the pattern formation of the organic EL element 60 can be performed.
【００１０】[0010]
【発明が解決しようとする課題】近年、ガラス基板１３
０の大きさは例えば３００ｍｍ×４００ｍｍ程度あり、
さらに大型化する傾向にある。ところが、シャドウマス
ク１１１の面積はガラス基板１３０の面積と同じであっ
たため、その大型化に伴い、シャドウマスク１１１のエ
ッチング加工あるいはメッキ加工による加工精度が悪く
なり、また熱膨張により寸法に狂いが生じるため、蒸着
パターンの精度が悪くなるという問題を生じていた。Recently, the glass substrate 13 is used.
The size of 0 is, for example, about 300 mm × 400 mm,
It tends to be larger. However, since the area of the shadow mask 111 is the same as the area of the glass substrate 130, the processing accuracy of the shadow mask 111 due to the etching process or the plating process deteriorates as the size increases, and the dimensions of the shadow mask 111 become incorrect due to thermal expansion. Therefore, there has been a problem that the accuracy of the vapor deposition pattern is deteriorated.
【００１１】[0011]
【課題を解決するための手段】本発明は、上述した従来
技術の課題に鑑みてなされものであり、基板と蒸着マス
クとを対向させ、蒸着源から、前記蒸着マスクに設けら
れた開口部を通して前記基板の表面に蒸着材料を蒸着し
てパターン形成を行う蒸着方法において、前記蒸着マス
クの面積が前記基板の面積より小さく、前記基板を前記
蒸着マスクに対して一方向に相対的に移動させながら蒸
着を行うことを特徴とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, in which a substrate and an evaporation mask are opposed to each other, and an evaporation source is used to pass through an opening provided in the evaporation mask. In the vapor deposition method of depositing a vapor deposition material on the surface of the substrate to form a pattern, the area of the vapor deposition mask is smaller than the area of the substrate, and the substrate is relatively moved in one direction with respect to the vapor deposition mask. It is characterized in that vapor deposition is performed.
【００１２】本発明によれば、蒸着マスクの面積が被蒸
着基板の面積より小さく加工成形されているので、加工
精度の悪化、熱膨張による寸法の狂いが抑制される。ま
た、基板を前記蒸着マスクに対して一方向に相対的に移
動させながら蒸着を行うことで、基板の全体に渡って蒸
着パターンの形成を行うことができる。According to the present invention, since the area of the vapor deposition mask is processed and formed smaller than the area of the substrate to be vapor-deposited, deterioration of processing accuracy and dimensional deviation due to thermal expansion are suppressed. Further, by performing vapor deposition while moving the substrate relative to the vapor deposition mask in one direction, it is possible to form a vapor deposition pattern over the entire substrate.
【００１３】[0013]
【発明の実施の形態】本発明の実施形態に係る蒸着方法
について図面を参照しながら説明する。図１は本実施形
態の蒸着方法を示す斜視図であり、図１のガラス基板２
０１の長手方向に沿う断面図である。BEST MODE FOR CARRYING OUT THE INVENTION A vapor deposition method according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view showing the vapor deposition method of the present embodiment. The glass substrate 2 of FIG.
It is sectional drawing which follows the longitudinal direction of 01.
【００１４】真空チャンバー内で、シャドウマスク２０
０（蒸着マスク）はガラス基板２０１に対向するよう
に、配置されている。またシャドウマスク２００に対向
して蒸着源２０２が配置されている。蒸着源２０２は長
細い箱の形状を呈した「るつぼ」によって構成され、こ
の「るつぼ」内に収納された有機ＥＬ蒸着材料はヒータ
ーによって加熱され蒸発される。In the vacuum chamber, the shadow mask 20
0 (vapor deposition mask) is arranged so as to face the glass substrate 201. A vapor deposition source 202 is arranged so as to face the shadow mask 200. The vapor deposition source 202 is configured by a “crucible” in the shape of a long and thin box, and the organic EL vapor deposition material housed in this “crucible” is heated by a heater and evaporated.
【００１５】シャドウマスク２００は、所望の蒸着パタ
ーンに対応して複数の開口部２０３を有している。この
開口部２０３のパターンは例えばエッチング処理やメッ
キ処理により加工される。このシャドウマスク２００
は、ガラス基板２０１よりも小さい面積に成形されてい
る。The shadow mask 200 has a plurality of openings 203 corresponding to a desired vapor deposition pattern. The pattern of the opening 203 is processed by, for example, etching or plating. This shadow mask 200
Are molded into a smaller area than the glass substrate 201.
【００１６】例えば、ガラス基板２０１のサイズが３０
０ｍｍ×４００ｍｍである場合、シャドウマスク２００
のサイズは３００ｍｍ×２０ｍｍ程度が適当である。こ
れにより、シャドウマスク２００の加工精度が良くな
り、また熱膨張の影響を小さくすることができるので、
結果として蒸着パターンの形成精度を向上することがで
きる。For example, the size of the glass substrate 201 is 30
If the size is 0 mm × 400 mm, the shadow mask 200
A size of about 300 mm × 20 mm is suitable. This improves the processing accuracy of the shadow mask 200 and can reduce the influence of thermal expansion.
As a result, the accuracy of forming the vapor deposition pattern can be improved.
【００１７】また、係る構成に加えて、ガラス基板２０
１をシャドウマスク２００に対して一方向に移動させる
ことで、ガラス基板２０１の全面に蒸着パターンを形成
することができる。この場合、シャドウマスク２００及
び対向配置された蒸着源２０２は不図示の真空チャンバ
ーに対して固定されており、ガラス基板２０１を移動機
構によりシャドウマスク２００に沿って移動させる。蒸
着源２０２から蒸発された有機ＥＬ蒸着材料は、シャド
ウマスク２００の開口部２０３を通して、ガラス基板２
０１上に蒸着され、所望の蒸着パターンが形成される。In addition to the above structure, the glass substrate 20
By moving 1 in one direction with respect to the shadow mask 200, a vapor deposition pattern can be formed on the entire surface of the glass substrate 201. In this case, the shadow mask 200 and the vapor deposition source 202 disposed opposite to each other are fixed to a vacuum chamber (not shown), and the glass substrate 201 is moved along the shadow mask 200 by the moving mechanism. The organic EL vapor deposition material evaporated from the vapor deposition source 202 passes through the opening 203 of the shadow mask 200 and passes through the glass substrate 2
No. 01 is vapor-deposited to form a desired vapor-deposition pattern.
【００１８】ガラス基板２０１の移動方法については、
蒸着源２０２をオンさせた状態でシャドウマスク２００
に対してリニアに移動させる方法と、移動・停止を繰り
返す方法が考えられる。後者の移動方法の場合には、ガ
ラス基板２０１を所定位置に停止させ、蒸着源２０２を
オンさせて蒸着を行い、移動中については蒸着源２０２
をオフさせて、蒸着を止める。Regarding the method of moving the glass substrate 201,
Shadow mask 200 with vapor deposition source 202 turned on
A method of linearly moving and a method of repeating moving and stopping can be considered. In the case of the latter moving method, the glass substrate 201 is stopped at a predetermined position, the vapor deposition source 202 is turned on to perform vapor deposition, and the vapor source 202 is moved during the movement.
Turn off to stop vapor deposition.
【００１９】また、ガラス基板２０１の移動時に、ガラ
ス基板２０１とシャドウマスク２００とを近接させ、か
つその間隔を一定に保つために、ガラス基板２０１側に
ガイド用のピラー２０４を形成しておくと良い。ガイド
用のピラー２０４は、ホトレジスト材料をパターニング
して形成することができる。その高さは４μ程度であ
る。Further, when the glass substrate 201 is moved, a guide pillar 204 is formed on the glass substrate 201 side in order to bring the glass substrate 201 and the shadow mask 200 close to each other and keep the distance therebetween constant. good. The guide pillars 204 can be formed by patterning a photoresist material. Its height is about 4μ.
【００２０】具体的は、図３に示すように、ガラス基板
２０１上の有機ＥＬ素子領域２１０を除く領域、例え
ば、隣接する有機ＥＬ素子領域２１０、２１０の間にス
トライプ状のピラー２０４Ａを形成してもよいし、有機
ＥＬ素子領域２１０の周囲にリング状のピラー２０４Ｂ
を形成してもよい。またガイド用のピラー２０４は点状
に形成しても良い。Specifically, as shown in FIG. 3, stripe-shaped pillars 204A are formed on the glass substrate 201 except the organic EL element region 210, for example, between the adjacent organic EL element regions 210 and 210. Alternatively, a ring-shaped pillar 204B may be provided around the organic EL element region 210.
May be formed. Further, the guide pillars 204 may be formed in a dot shape.
【００２１】ガイド用のピラー２０４は、蒸着源２０２
からの蒸着が等方的である場合は必要であるが、異方性
が強い場合には不要である。その場合には、ガラス基板
２０１とシャドウマスク２００との間に適当なギャップ
が存在していればよい。The guide pillar 204 is a vapor deposition source 202.
It is necessary when the vapor deposition from isotropic is isotropic, but is unnecessary when the anisotropy is strong. In that case, an appropriate gap may be present between the glass substrate 201 and the shadow mask 200.
【００２２】また、上記実施形態は、シャドウマスク２
００及び蒸着源２０２を固定し、ガラス基板２０１を移
動させているが、これに限定されることはない。反対
に、ガラス基板２０１を固定し、シャドウマスク２００
及び蒸着源２０２をガラス基板２０１に対して移動させ
てもよい。In the above embodiment, the shadow mask 2 is used.
00 and the vapor deposition source 202 are fixed and the glass substrate 201 is moved, but the present invention is not limited to this. On the contrary, the glass substrate 201 is fixed and the shadow mask 200
Alternatively, the evaporation source 202 may be moved with respect to the glass substrate 201.
【００２３】次に、本発明の蒸着方法が適用される有機
ＥＬ表示装置の構造について説明する。Next, the structure of the organic EL display device to which the vapor deposition method of the present invention is applied will be described.
【００２４】図４に有機ＥＬ表示装置の表示画素付近を
示す平面図を示し、図５（ａ）に図４中のＡ−Ａ線に沿
った断面図を示し、図５（ｂ）に図４中のＢ−Ｂ線に沿
った断面図を示す。FIG. 4 is a plan view showing the vicinity of the display pixel of the organic EL display device, FIG. 5 (a) is a sectional view taken along the line AA in FIG. 4, and FIG. 5 (b) is a view. 4 is a sectional view taken along line BB in FIG.
【００２５】図４及び図５に示すように、ゲート信号線
５１とドレイン信号線５２とに囲まれた領域に表示画素
１１５が形成されており、マトリクス状に配置されてい
る。As shown in FIGS. 4 and 5, the display pixels 115 are formed in a region surrounded by the gate signal lines 51 and the drain signal lines 52 and arranged in a matrix.
【００２６】この表示画素１１５には、自発光素子であ
る有機ＥＬ素子６０と、この有機ＥＬ素子６０に電流を
供給するタイミングを制御するスイッチング用ＴＦＴ３
０と、有機ＥＬ素子６０に電流を供給する駆動用ＴＦＴ
４０と、保持容量とが配置されている。なお、有機ＥＬ
素子６０は、第１の電極である陽極６１と発光材料から
なる発光素子層と、第２の電極である陰極６５とから成
っている。In the display pixel 115, the organic EL element 60, which is a self-luminous element, and the switching TFT 3 for controlling the timing of supplying a current to the organic EL element 60.
0 and a driving TFT that supplies a current to the organic EL element 60
40 and a storage capacitor are arranged. In addition, organic EL
The element 60 is composed of an anode 61 which is a first electrode, a light emitting element layer which is made of a light emitting material, and a cathode 65 which is a second electrode.
【００２７】即ち、両信号線５１，５２の交点付近には
スイッチング用ＴＦＴである第１のＴＦＴ３０が備えら
れており、そのＴＦＴ３０のソース３３ｓは保持容量電
極線５４との間で容量をなす容量電極５５を兼ねるとと
もに、ＥＬ素子駆動用ＴＦＴである第２のＴＦＴ４０の
ゲート４１に接続されており、第２のＴＦＴのソース４
３ｓは有機ＥＬ素子６０の陽極６１に接続され、他方の
ドレイン４３ｄは有機ＥＬ素子６０に供給される電流源
である駆動電源線５３に接続されている。That is, a first TFT 30, which is a switching TFT, is provided near the intersection of both signal lines 51 and 52, and the source 33 s of the TFT 30 has a capacitance forming a capacitance with the storage capacitance electrode line 54. It also serves as the electrode 55 and is connected to the gate 41 of the second TFT 40, which is the EL element driving TFT, and the source 4 of the second TFT.
3s is connected to the anode 61 of the organic EL element 60, and the other drain 43d is connected to the drive power supply line 53 which is a current source supplied to the organic EL element 60.
【００２８】また、ゲート信号線５１と並行に保持容量
電極線５４が配置されている。この保持容量電極線５４
はクロム等から成っており、ゲート絶縁膜１２を介して
ＴＦＴのソース３３ｓと接続された容量電極５５との間
で電荷を蓄積して容量を成している。この保持容量５６
は、第２のＴＦＴ４０のゲート電極４１に印加される電
圧を保持するために設けられている。A storage capacitor electrode line 54 is arranged in parallel with the gate signal line 51. This storage capacitor electrode line 54
Is made of chrome or the like and accumulates charges between the source 33 s of the TFT and the capacitance electrode 55 connected to the source 33 s via the gate insulating film 12 to form a capacitance. This holding capacity 56
Are provided for holding the voltage applied to the gate electrode 41 of the second TFT 40.
【００２９】図５に示すように、有機ＥＬ表示装置は、
ガラスや合成樹脂などから成る基板又は導電性を有する
基板あるいは半導体基板等の基板１０上に、ＴＦＴ及び
有機ＥＬ素子を順に積層形成して成る。ただし、基板１
０として導電性を有する基板及び半導体基板を用いる場
合には、これらの基板１０上にＳｉＯ2やＳｉＮなどの
絶縁膜を形成した上に第１、第２のＴＦＴ及び有機ＥＬ
素子を形成する。いずれのＴＦＴともに、ゲート電極が
ゲート絶縁膜を介して能動層の上方にあるいわゆるトッ
プゲート構造である。As shown in FIG. 5, the organic EL display device is
A TFT and an organic EL element are sequentially laminated on a substrate 10 such as a substrate made of glass or synthetic resin, a substrate having conductivity, or a semiconductor substrate. However, substrate 1
When a conductive substrate and a semiconductor substrate are used as 0, an insulating film such as SiO 2 or SiN is formed on the substrate 10 and then the first and second TFTs and the organic EL are formed.
Form an element. Each of the TFTs has a so-called top gate structure in which the gate electrode is above the active layer via the gate insulating film.
【００３０】まず、スイッチング用ＴＦＴである第１の
ＴＦＴ３０について説明する。First, the first TFT 30, which is a switching TFT, will be described.
【００３１】図５（ａ）に示すように、石英ガラス、無
アルカリガラス等からなる絶縁性基板１０上に、非晶質
シリコン膜（以下、「ａ−Ｓｉ膜」と称する。）をＣＶ
Ｄ法等にて成膜し、そのａ−Ｓｉ膜にレーザ光を照射し
て溶融再結晶化させて多結晶シリコン膜（以下、「ｐ−
Ｓｉ膜」と称する。）とし、これを能動層３３とする。
その上に、ＳｉＯ2膜、ＳｉＮ膜の単層あるいは積層体
をゲート絶縁膜３２として形成する。更にその上に、Ｃ
ｒ、Ｍｏなどの高融点金属からなるゲート電極３１を兼
ねたゲート信号線５１及びＡｌから成るドレイン信号線
５２を備えており、有機ＥＬ素子の駆動電源でありＡｌ
から成る駆動電源線５３が配置されている。As shown in FIG. 5A, an amorphous silicon film (hereinafter referred to as "a-Si film") is CV on an insulating substrate 10 made of quartz glass, non-alkali glass or the like.
A film is formed by the D method or the like, and the a-Si film is irradiated with laser light to be melted and recrystallized to form a polycrystalline silicon film (hereinafter referred to as “p-
"Si film". ), And this is the active layer 33.
A single layer or a laminated body of a SiO 2 film and a SiN film is formed thereon as the gate insulating film 32. On top of that, C
It is provided with a gate signal line 51 also serving as a gate electrode 31 made of a refractory metal such as r and Mo and a drain signal line 52 made of Al, which is a driving power source for an organic EL element and is Al.
Drive power supply line 53 is arranged.
【００３２】そして、ゲート絶縁膜３２及び能動層３３
上の全面には、ＳｉＯ2膜、ＳｉＮ膜及びＳｉＯ2膜の順
に積層された層間絶縁膜１５が形成されており、ドレイ
ン３３ｄに対応して設けたコンタクトホールにＡｌ等の
金属を充填したドレイン電極３６が設けられ、更に全面
に有機樹脂から成り表面を平坦にする平坦化絶縁膜１７
が形成されている。Then, the gate insulating film 32 and the active layer 33.
An interlayer insulating film 15 in which a SiO 2 film, a SiN film, and a SiO 2 film are laminated in this order is formed on the entire upper surface, and a drain in which a metal such as Al is filled in a contact hole provided corresponding to the drain 33d. An electrode 36 is provided, and a flattening insulating film 17 made of an organic resin is formed on the entire surface to make the surface flat.
Are formed.
【００３３】次に、有機ＥＬ素子の駆動用ＴＦＴである
第２のＴＦＴ４０について説明する。図５（ｂ）に示す
ように、石英ガラス、無アルカリガラス等からなる絶縁
性基板１０上に、ａ−Ｓｉ膜にレーザ光を照射して多結
晶化してなる能動層４３、ゲート絶縁膜１２、及びＣ
ｒ、Ｍｏなどの高融点金属からなるゲート電極４１が順
に形成されており、その能動層４３には、チャネル４３
ｃと、このチャネル４３ｃの両側にソース４３ｓ及びド
レイン４３ｄが設けられている。そして、ゲート絶縁膜
１２及び能動層４３上の全面に、ＳｉＯ2膜、ＳｉＮ膜
及びＳｉＯ2膜の順に積層された層間絶縁膜１５を形成
し、ドレイン４３ｄに対応して設けたコンタクトホール
にＡｌ等の金属を充填して駆動電源に接続された駆動電
源線５３が配置されている。更に全面に例えば有機樹脂
から成り表面を平坦にする平坦化絶縁膜１７を備えてい
る。そして、その平坦化絶縁膜１７のソース４３ｓに対
応した位置にコンタクトホールを形成し、このコンタク
トホールを介してソース４３ｓとコンタクトしたＩＴＯ
から成る透明電極、即ち有機ＥＬ素子の陽極６１を平坦
化絶縁膜１７上に設けている。この陽極６１は各表示画
素ごとに島状に分離形成されている。Next, the second TFT 40, which is a driving TFT for the organic EL element, will be described. As shown in FIG. 5B, an a-Si film is irradiated with a laser beam to polycrystallize the active layer 43 and the gate insulating film 12 on the insulating substrate 10 made of quartz glass, alkali-free glass or the like. , And C
A gate electrode 41 made of a refractory metal such as r and Mo is formed in order, and a channel 43 is formed in the active layer 43.
c, and a source 43s and a drain 43d are provided on both sides of the channel 43c. Then, an interlayer insulating film 15 in which a SiO 2 film, a SiN film, and a SiO 2 film are laminated in this order is formed on the entire surface of the gate insulating film 12 and the active layer 43, and Al is formed in a contact hole provided corresponding to the drain 43d. A driving power supply line 53 filled with a metal such as the above and connected to the driving power supply is arranged. Further, a flattening insulating film 17 made of, for example, an organic resin for flattening the surface is provided on the entire surface. Then, a contact hole is formed in the flattening insulating film 17 at a position corresponding to the source 43s, and the ITO is brought into contact with the source 43s through the contact hole.
A transparent electrode made of, that is, an anode 61 of an organic EL element is provided on the flattening insulating film 17. The anode 61 is separately formed in an island shape for each display pixel.
【００３４】有機ＥＬ素子６０は、一般的な構造であ
り、ＩＴＯ（Indium Tin Oxide）等の透明電極から成る
陽極６１、ＭＴＤＡＴＡ（4,4-bis(3-methylphenylphen
ylamino)biphenyl）から成る第１ホール輸送層、ＴＰＤ
（4,4,4-tris(3-methylphenylphenylamino)triphenylan
ine）からなる第２ホール輸送層から成るホール輸送層
６２、キナクリドン（Quinacridone）誘導体を含むＢｅ
ｂｑ2（10-ベンゾ〔ｈ〕キノリノール−ベリリウム錯
体）から成る発光層６３、及びＢｅｂｑ2から成る電子
輸送層６４、マグネシウム・インジウム合金もしくはア
ルミニウム、もしくはアルミニウム合金から成る陰極６
５が、この順番で積層形成された構造である。The organic EL element 60 has a general structure and includes an anode 61 made of a transparent electrode such as ITO (Indium Tin Oxide) and MTDATA (4,4-bis (3-methylphenylphene).
ylamino) biphenyl) first hole transport layer, TPD
(4,4,4-tris (3-methylphenylphenylamino) triphenylan
ine) and a second hole transport layer 62 composed of a hole transport layer, Be containing a quinacridone derivative
Light-emitting layer 63 made of bq2 (10-benzo [h] quinolinol-beryllium complex), electron transport layer 64 made of Bebq2, cathode 6 made of magnesium-indium alloy or aluminum, or aluminum alloy.
5 is a structure in which layers are formed in this order.
【００３５】有機ＥＬ素子６０は、陽極６１から注入さ
れたホールと、陰極６５から注入された電子とが発光層
の内部で再結合し、発光層を形成する有機分子を励起し
て励起子が生じる。この励起子が放射失活する過程で発
光層から光が放たれ、この光が透明な陽極６１から透明
絶縁基板を介して外部へ放出されて発光する。In the organic EL element 60, the holes injected from the anode 61 and the electrons injected from the cathode 65 are recombined inside the light emitting layer to excite the organic molecules forming the light emitting layer to generate excitons. Occurs. Light is emitted from the light emitting layer in the process of radiation deactivation of the excitons, and this light is emitted to the outside from the transparent anode 61 through the transparent insulating substrate.
【００３６】上述した有機ＥＬ素子６０のホール輸送層
６２、発光層６３、電子輸送層６４の形成について、本
発明の蒸着方法を適用することができる。The vapor deposition method of the present invention can be applied to the formation of the hole transport layer 62, the light emitting layer 63, and the electron transport layer 64 of the organic EL element 60 described above.
【００３７】[0037]
【発明の効果】本発明の蒸着方法によれば、蒸着マスク
が被蒸着基板より小さく加工成形されているので、加工
精度の悪化、熱膨張による寸法の狂いが抑制される。ま
た、基板を前記蒸着マスクに対して一方向に相対的に移
動させながら蒸着を行うことで、基板の全体に渡って蒸
着パターンの形成を行うことができる。According to the vapor deposition method of the present invention, since the vapor deposition mask is processed and formed smaller than the substrate to be vapor-deposited, deterioration of processing accuracy and dimensional deviation due to thermal expansion are suppressed. Further, by performing vapor deposition while moving the substrate relative to the vapor deposition mask in one direction, it is possible to form a vapor deposition pattern over the entire substrate.
【図１】本発明の実施形態に係る蒸着方法を説明する斜
視図である。FIG. 1 is a perspective view illustrating a vapor deposition method according to an embodiment of the present invention.
【図２】本発明の実施形態に係る蒸着方法を説明する断
面図である。FIG. 2 is a sectional view illustrating a vapor deposition method according to an embodiment of the present invention.
【図３】本発明の実施形態に係る蒸着方法を説明する斜
視図である。FIG. 3 is a perspective view illustrating a vapor deposition method according to an embodiment of the present invention.
【図４】有機ＥＬ表示装置の平面図である。FIG. 4 is a plan view of an organic EL display device.
【図５】図４中のＢ−Ｂ線に沿った断面図である。5 is a cross-sectional view taken along the line BB in FIG.
【図６】有機ＥＬ材料の蒸着によるパターン形成方法を
示す図である。FIG. 6 is a diagram showing a pattern forming method by vapor deposition of an organic EL material.
【図７】有機ＥＬ材料の蒸着によるパターン形成方法を
示す図である。FIG. 7 is a diagram showing a pattern forming method by vapor deposition of an organic EL material.
【図８】有機ＥＬ材料の蒸着によるパターン形成方法を
示す図である。FIG. 8 is a diagram showing a pattern forming method by vapor deposition of an organic EL material.
【図９】有機ＥＬ材料の蒸着によるパターン形成方法を
示す図である。FIG. 9 is a diagram showing a pattern forming method by vapor deposition of an organic EL material.
２００ シャドウマスク ２０１ ガラス基板 ２
０２ 蒸着源
２０３ 開口部 ２０４ ガイド用のピラー ２１
０ 有機ＥＬ素子領域200 Shadow mask 201 Glass substrate 2
02 evaporation source 203 opening 204 pillar for guide 21
0 Organic EL element area
Claims (11)
から、前記蒸着マスクに設けられた開口部を通して前記
基板の表面に蒸着材料を蒸着してパターン形成を行う蒸
着方法において、 前記蒸着マスクの面積が前記基板の面積より小さく、前
記基板を前記蒸着マスクに対して一方向に相対的に移動
させながら蒸着を行うことを特徴とする蒸着方法。1. A vapor deposition method in which a substrate and a vapor deposition mask are opposed to each other, and a vapor deposition material is vapor deposited on a surface of the substrate from an vapor deposition source through an opening provided in the vapor deposition mask to form a pattern. Is smaller than the area of the substrate, and the vapor deposition is performed while moving the substrate relatively in one direction with respect to the vapor deposition mask.
的に移動させながら蒸着を行うことを特徴とする請求項
１記載の蒸着方法。2. The vapor deposition method according to claim 1, wherein vapor deposition is performed while continuously moving the substrate with respect to the vapor deposition mask.
止と移動を繰り返しながら蒸着を行うことを特徴とする
請求項１記載の蒸着方法。3. The vapor deposition method according to claim 1, wherein vapor deposition is performed by repeatedly stopping and moving the substrate with respect to the vapor deposition mask.
動時に蒸着源をオンすることを特徴とする請求項３記載
の蒸着方法。4. The vapor deposition method according to claim 3, wherein the vapor deposition source is turned off when the substrate is stopped and the vapor deposition source is turned on when the substrate is moved.
表面にガイド用のピラーを設けたことを特徴とする請求
項１記載の蒸着方法。5. The vapor deposition method according to claim 1, wherein a pillar for guiding is provided on the surface of the substrate or the surface of the vapor deposition mask.
蒸着源から、前記蒸着マスクに設けられた開口部を通し
て前記絶縁性基板の表面に有機ＥＬ素子材料を蒸着し
て、有機ＥＬ素子のパターン形成を行う蒸着方法におい
て、 前記蒸着マスクの面積が前記絶縁性基板の面積より小さ
く、前記絶縁性基板を前記蒸着マスクに対して一方向に
相対的に移動させながら蒸着を行うことを絶縁性特徴と
する蒸着方法。6. The insulating substrate and the vapor deposition mask are opposed to each other,
In a vapor deposition method for depositing an organic EL device material on a surface of the insulating substrate from an evaporation source through an opening provided in the vapor deposition mask to form a pattern of the organic EL device, the area of the vapor deposition mask is the insulating film. A vapor deposition method characterized in that the area of the insulating substrate is smaller than that of the insulating substrate, and the insulating substrate is vapor-deposited while moving the insulating substrate in one direction relative to the vapor deposition mask.
て連続的に移動させながら蒸着を行うことを特徴とする
請求項６記載の蒸着方法。7. The vapor deposition method according to claim 6, wherein vapor deposition is performed while continuously moving the insulating substrate with respect to the vapor deposition mask.
て、停止と移動を繰り返しながら蒸着を行うことを特徴
とする請求項６記載の蒸着方法。8. The vapor deposition method according to claim 6, wherein vapor deposition is performed by repeatedly stopping and moving the insulating substrate with respect to the vapor deposition mask.
し、移動時に蒸着源をオンすることを特徴とする請求項
６記載の蒸着方法。9. The vapor deposition method according to claim 6, wherein the vapor deposition source is turned off when the insulating substrate is stopped and the vapor deposition source is turned on when the insulating substrate is moved.
マスクの表面にガイド用のピラーを設けたことを特徴と
する請求項６記載の蒸着方法。10. The vapor deposition method according to claim 6, wherein a pillar for guiding is provided on the surface of the insulating substrate or the surface of the vapor deposition mask.
基板上の前記有機ＥＬ素子領域を除く領域に設けられて
いることを特徴とする請求項９記載の蒸着方法。11. The vapor deposition method according to claim 9, wherein the guide pillar is provided in a region other than the organic EL device region on the insulating substrate.
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