JP2018059130A - Production method of vapor deposition mask, and production method of metal plate used for producing vapor deposition mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce a vapor deposition mask having little dispersion of the shape of an open hole.SOLUTION: A production method of a vapor deposition mask includes: a preparation step for preparing a metal plate comprising an iron alloy containing nickel, and including a first surface positioned on the substrate side to which a vapor deposition material passing through an open hole adheres, and a second surface positioned on the opposite side to the first surface; a surface layer removal step for removing a surface layer at least on the first surface side of the metal plate; and a processing step for forming an open hole on the metal plate by etching the metal plate.SELECTED DRAWING: Figure 16

Description

  The present invention relates to a method for manufacturing a vapor deposition mask. Moreover, this invention relates to the manufacturing method of the metal plate used in order to produce a vapor deposition mask.

  In recent years, a display device used in a portable device such as a smartphone or a tablet PC is required to have high definition, for example, a pixel density of 400 ppi or more. In portable devices, there is an increasing demand for compatibility with ultra full high vision, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

  Among display devices, organic EL display devices have attracted attention because of their excellent responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels with a desired pattern using a vapor deposition mask in which through holes arranged in a desired pattern are formed is known. Specifically, first, a deposition mask is brought into intimate contact with a substrate for an organic EL display device, and then the deposited deposition mask and the substrate are both put into a deposition apparatus to deposit an organic material on the substrate. I do. As a result, a pixel containing an organic material can be formed on the substrate in a pattern corresponding to the pattern of the through hole of the vapor deposition mask.

  As a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate by exposure / development processing, and a second resist pattern is formed on the second surface of the metal plate by exposure / development processing. Next, a region of the first surface of the metal plate that is not covered with the first resist pattern is etched to form a first opening in the first surface of the metal plate. Thereafter, a region of the second surface of the metal plate that is not covered with the second resist pattern is etched to form a second opening in the second surface of the metal plate. At this time, by performing etching so that the first opening and the second opening communicate with each other, a through-hole penetrating the metal plate can be formed. The metal plate for producing the vapor deposition mask is produced, for example, by rolling a base material made of an iron alloy containing nickel.

Japanese Patent No. 5382259

  As a result of intensive studies by the present inventors, it has been found that there are many inclusions in the surface layer of the metal plate after rolling. In addition, when the present inventors have conducted intensive research, when a metal plate having many inclusions in the surface layer is etched to form through holes in the metal plate, the shape of the through holes tends to vary. I found. If the shape of the through hole varies, the dimensional accuracy and position accuracy of the vapor deposition material that adheres to the substrate through the through hole will be reduced.

  An object of this invention is to provide the manufacturing method of the vapor deposition mask which can solve such a subject effectively.

  The present invention is a method of manufacturing a metal plate used for manufacturing a vapor deposition mask by forming a plurality of through-holes, wherein a base material made of an iron alloy containing nickel is rolled to form a first surface and a second surface. A method for producing a metal plate, comprising: a rolling step for producing a metal plate including a surface; and a surface layer removing step for removing at least the surface layer on the first surface side of the metal plate.

  In the method for producing a metal plate according to the present invention, the surface layer removing step may remove the surface layer within a range of 0.5 μm or more and 20 μm or less in the thickness direction of the metal plate.

  In the metal plate manufacturing method according to the present invention, the surface layer removing step may include a wet etching step of bringing an etching solution into contact with at least the first surface of the metal plate.

  In the metal plate manufacturing method according to the present invention, the wet etching step may include an injection step of injecting the etching solution toward the first surface in a state where the first surface of the metal plate faces downward. Good.

  In the method for producing a metal plate according to the present invention, the surface layer removing step may include a step of removing the surface layer on the first surface side and a step of removing the surface layer on the second surface side. .

  In the metal plate manufacturing method according to the present invention, the thickness of the metal plate after the surface layer is removed by the surface layer removing step may be 5 μm or more and 50 μm or less.

  The present invention is a method of manufacturing a vapor deposition mask having a plurality of through holes formed of an iron alloy containing nickel, and a first surface located on a substrate side to which a vapor deposition material that has passed through the through holes adheres; A preparation step of preparing a metal plate including a second surface located on the opposite side of the first surface, a surface layer removal step of removing at least the surface layer of the metal plate on the first surface side, And a processing step of etching the metal plate to form the through hole in the metal plate.

  In the vapor deposition mask manufacturing method according to the present invention, in the preparation step, the metal plate may be produced by rolling a base material made of an iron alloy containing nickel.

  In the deposition mask manufacturing method according to the present invention, the surface layer removing step may remove the surface layer within a range of 0.5 μm or more and 20 μm or less in the thickness direction of the metal plate.

  In the method of manufacturing a vapor deposition mask according to the present invention, the surface layer removing step may include a wet etching step of bringing an etching solution into contact with at least the first surface of the metal plate.

  In the vapor deposition mask manufacturing method according to the present invention, the wet etching step may include an injection step of injecting the etching liquid toward the first surface in a state where the first surface of the metal plate faces downward. Good.

  In the deposition mask manufacturing method according to the present invention, the surface layer removing step may include a step of removing the surface layer on the first surface side and a step of removing the surface layer on the second surface side. .

  In the method for manufacturing a vapor deposition mask according to the present invention, the thickness of the metal plate after the surface layer is removed by the surface layer removing step may be 5 μm or more and 50 μm or less.

  According to the present invention, it is possible to manufacture a vapor deposition mask with small variations in the shape of the through holes.

It is a figure which shows the vapor deposition apparatus provided with the vapor deposition mask apparatus by one Embodiment of this invention. It is sectional drawing which shows the organic electroluminescence display manufactured using the vapor deposition mask apparatus shown in FIG. It is a top view which shows the vapor deposition mask apparatus by one Embodiment of this invention. It is a partial top view which shows the effective area | region of the vapor deposition mask shown by FIG. It is sectional drawing along the VV line of FIG. It is sectional drawing along the VI-VI line of FIG. It is sectional drawing along the VII-VII line of FIG. It is sectional drawing which expands and shows the through-hole shown in FIG. 5, and the area | region of the vicinity. It is a figure which shows the process of rolling a base material and obtaining the metal plate which has desired thickness. It is a figure which shows the process of annealing the metal plate obtained by rolling. It is sectional drawing which shows a mode that the inclusion exists in the surface layer of the metal plate obtained by rolling. It is sectional drawing which shows the process of etching the metal plate shown in FIG. 11 from the 1st surface side, and forming a 1st recessed part. FIG. 13 is a cross-sectional view showing a step of enlarging the first recess by further etching from the state shown in FIG. 12. It is sectional drawing which shows an example of the vapor deposition mask manufactured using the metal plate in which many inclusions exist in a surface layer. It is a schematic diagram for demonstrating generally an example of the manufacturing method of a vapor deposition mask. It is a figure which shows the process of removing the surface layer of a metal plate. It is a figure which shows the metal plate from which the surface layer was removed. It is a figure which shows the process of forming a resist film on a metal plate. It is a figure which shows the process of closely_contact | adhering an exposure mask to a resist film. It is a figure which shows the process of developing a resist film. It is a figure which shows a 1st surface etching process. It is a figure which shows the process of coat | covering a 1st recessed part with resin. It is a figure which shows a 2nd surface etching process. It is a figure which shows the 2nd surface etching process following FIG. It is a figure which shows the process of removing resin and a resist pattern from a metal plate. It is a figure which shows one modification of the process of removing the surface layer of a metal plate.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  1 to 23 are diagrams for explaining an embodiment of the present invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, the present invention can be applied to vapor deposition masks used for various purposes without being limited to such applications.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, the “plate” is a concept including a member that can be called a sheet or a film.

  In addition, “plate surface (sheet surface, film surface)” means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member. Moreover, the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate | board surface (sheet surface, film surface) of the said member.

  Further, as used herein, the shape, geometric conditions and physical characteristics and their degree are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, lengths and angles In addition, values of physical characteristics and the like are not limited to a strict meaning and are interpreted to include a range where a similar function can be expected.

(Vapor deposition equipment)
First, the vapor deposition apparatus 90 which performs the vapor deposition process which vapor-deposits a vapor deposition material on a target object is demonstrated with reference to FIG. As illustrated in FIG. 1, the vapor deposition apparatus 90 includes a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask apparatus 10 therein. The vapor deposition apparatus 90 further includes exhaust means for making the inside of the vapor deposition apparatus 90 a vacuum atmosphere. The crucible 94 contains a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98 under a vacuum atmosphere. The vapor deposition mask device 10 is disposed so as to face the crucible 94.

(Deposition mask device)
Hereinafter, the vapor deposition mask device 10 will be described. As shown in FIG. 1, the vapor deposition mask device 10 includes a vapor deposition mask 20 and a frame 15 that supports the vapor deposition mask 20. The frame 15 supports the vapor deposition mask 20 in a state of being pulled in the surface direction so that the vapor deposition mask 20 is not bent. As shown in FIG. 1, the vapor deposition mask device 10 is disposed in the vapor deposition device 90 so that the vapor deposition mask 20 faces a substrate, for example, an organic EL substrate 92, to which the vapor deposition material 98 is attached. In the following description, among the surfaces of the vapor deposition mask 20, the surface on the organic EL substrate 92 side is referred to as a first surface 20a, and the surface located on the opposite side of the first surface 20a is referred to as a second surface 20b.

  As shown in FIG. 1, the vapor deposition mask apparatus 10 may include a magnet 93 disposed on the surface of the organic EL substrate 92 opposite to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 can be brought close to the organic EL substrate 92 by attracting the vapor deposition mask 20 to the magnet 93 side by magnetic force.

  FIG. 3 is a plan view showing a case where the vapor deposition mask device 10 is viewed from the first surface 20a side of the vapor deposition mask 20. As shown in FIG. 3, the vapor deposition mask device 10 includes a plurality of vapor deposition masks 20. Each vapor deposition mask 20 includes a pair of long sides 26 and a pair of short sides 27, and has, for example, a rectangular shape. Each vapor deposition mask 20 is fixed to the frame 15 by, for example, spot welding at a pair of short sides 27 or in the vicinity thereof.

  The vapor deposition mask 20 includes a metal plate-like base material in which a plurality of through holes 25 penetrating the vapor deposition mask 20 are formed. The vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the through hole 25 of the vapor deposition mask 20. Thereby, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  FIG. 2 is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of FIG. The organic EL display device 100 includes an organic EL substrate 92 and pixels including a vapor deposition material 98 provided in a pattern.

  In the case where it is desired to perform color display with a plurality of colors, the vapor deposition apparatuses 90 each equipped with the vapor deposition mask 20 corresponding to each color are prepared, and the organic EL substrate 92 is sequentially put into each vapor deposition apparatus 90. Thereby, for example, an organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue can be sequentially deposited on the organic EL substrate 92.

  By the way, a vapor deposition process may be implemented inside the vapor deposition apparatus 90 used as a high temperature atmosphere. In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients. In this case, if the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 and the organic EL substrate 92 are greatly different, a positional shift caused by a difference in their dimensional change occurs. As a result, the vapor deposition mask 20 or the frame 15 adheres on the organic EL substrate 92. The dimensional accuracy and position accuracy of the vapor deposition material will decrease.

  In order to solve such a problem, it is preferable that the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 are equal to the thermal expansion coefficient of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. For example, an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used as the material of the base material constituting the vapor deposition mask 20. Specific examples of the iron alloy containing nickel include an invar material containing nickel of 34% by mass or more and 38% by mass or less, a super invar material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, 38 Examples thereof include a low thermal expansion Fe—Ni plating alloy containing nickel in an amount of not less than mass% and not more than 54 mass%.

  In the vapor deposition process, when the temperature of the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 does not reach a high temperature, the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is set as the thermal expansion coefficient of the organic EL substrate 92. There is no need to make the values equivalent. In this case, a material other than the above-described iron alloy may be used as a material constituting the vapor deposition mask 20. For example, an iron alloy other than the above-described iron alloy containing nickel, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. Moreover, you may use alloys other than iron alloys, such as nickel and a nickel- cobalt alloy.

(Deposition mask)
Next, the vapor deposition mask 20 will be described in detail. As illustrated in FIG. 3, the vapor deposition mask 20 includes a pair of ear portions (a first ear portion 17 a and a second ear portion 17 b) including a pair of short sides 27 of the vapor deposition mask 20, and a pair of ear portions 17 a and 17 b. And an intermediate portion 18 positioned therebetween.

(Ear part)
First, the ears 17a and 17b will be described in detail. The ears 17 a and 17 b are portions fixed to the frame 15 in the vapor deposition mask 20. In the present embodiment, the ear portions 17 a and 17 b are configured integrally with the intermediate portion 18. In addition, the ear | edge parts 17a and 17b may be comprised by the member different from the intermediate part 18. FIG. In this case, the ear portions 17a and 17b are joined to the intermediate portion 18 by welding, for example.

(Middle part)
Next, the intermediate part 18 will be described. The intermediate portion 18 includes at least one effective region 22 in which a through hole 25 extending from the first surface 20 a to the second surface 20 b is formed, and a surrounding region 23 surrounding the effective region 22. The effective area 22 is an area facing the display area of the organic EL substrate 92 in the vapor deposition mask 20.

  In the example shown in FIG. 3, the intermediate portion 18 includes a plurality of effective regions 22 arranged at predetermined intervals along the long side 26 of the vapor deposition mask 20. One effective area 22 corresponds to the display area of one organic EL display device 100. For this reason, according to the vapor deposition mask apparatus 10 shown in FIG. 1, the multi-surface vapor deposition of the organic EL display apparatus 100 is possible. Note that one effective area 22 may correspond to a plurality of display areas.

  As shown in FIG. 3, the effective region 22 has, for example, a substantially rectangular shape in a plan view, and more precisely, a substantially rectangular shape in a plan view. Although not shown, each effective region 22 can have various shapes of contours according to the shape of the display region of the organic EL substrate 92. For example, each effective area 22 may have a circular outline.

  Hereinafter, the effective area 22 will be described in detail. FIG. 4 is an enlarged plan view showing the effective region 22 from the second surface 20 b side of the vapor deposition mask 20. As shown in FIG. 4, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged at predetermined pitches along two directions orthogonal to each other in the effective region 22. Yes. An example of the through hole 25 will be described in more detail with reference mainly to FIGS. 5 to 7 are cross-sectional views along the VV direction to the VII-VII direction of the effective region 22 of FIG.

  As shown in FIGS. 5 to 7, the plurality of through holes 25 extend along the normal direction N of the vapor deposition mask 20 from the first surface 20 a on one side along the normal direction N of the vapor deposition mask 20. It penetrates to the second surface 20b on the other side. In the illustrated example, as will be described in detail later, a first recess 30 is formed by etching on the first surface 21a of the base material 21 on one side in the normal direction N of the vapor deposition mask 20, and the vapor deposition mask 20 A second recess 35 is formed on the second surface 21 b of the base 21 that is the other side in the normal direction N. The 1st recessed part 30 is connected to the 2nd recessed part 35, and is formed so that the 2nd recessed part 35 and the 1st recessed part 30 may mutually communicate by this. The through hole 25 is configured by a second recess 35 and a first recess 30 connected to the second recess 35.

  As shown in FIGS. 5 to 7, the plate of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 from the second surface 20 b side of the vapor deposition mask 20 toward the first surface 20 a side. The opening area of each second recess 35 in the cross section along the plane is gradually reduced. Similarly, the opening area of each first recess 30 in the cross section along the plate surface of the vapor deposition mask 20 at each position along the normal direction N of the vapor deposition mask 20 is from the first surface 20a side of the vapor deposition mask 20. It gradually becomes smaller toward the second surface 20b.

  As shown in FIGS. 5 to 7, the wall surface 31 of the first recess 30 and the wall surface 36 of the second recess 35 are connected via a circumferential connecting portion 41. In the connection portion 41, the wall surface 31 of the first recess 30 inclined with respect to the normal direction N of the vapor deposition mask 20 and the wall surface 36 of the second recess 35 inclined with respect to the normal direction N of the vapor deposition mask 20 merge. It is defined by the ridgeline of the overhanging part. And the connection part 41 defines the penetration part 42 with which the opening area of the through-hole 25 becomes the minimum in the planar view of the vapor deposition mask 20.

  As shown in FIGS. 5 to 7, two adjacent through holes 25 are formed on the other surface along the normal direction N of the vapor deposition mask 20, that is, on the first surface 20 a of the vapor deposition mask 20. They are separated from each other along the plate surface of the mask 20. That is, when the base 21 is etched from the side of the first surface 21 a of the base 21 that corresponds to the first surface 20 a of the vapor deposition mask 20 as in the manufacturing method described later, the first recess 30 is produced. The first surface 21 a of the base material 21 remains between the two adjacent first recesses 30.

  Similarly, as shown in FIG. 5 and FIG. 7, two adjacent second concave portions on one side along the normal direction N of the vapor deposition mask 20, that is, on the second surface 20 b side of the vapor deposition mask 20. 35 may be separated from each other along the plate surface of the vapor deposition mask 20. That is, the second surface 21b of the base material 21 may remain between two adjacent second recesses 35. In the following description, a portion of the effective area 22 of the second surface 21 b of the base material 21 that remains without being etched is also referred to as a top portion 43. By producing the vapor deposition mask 20 so that such a top portion 43 remains, the vapor deposition mask 20 can have sufficient strength. This can prevent the vapor deposition mask 20 from being damaged, for example, during transportation. If the width β of the top portion 43 is too large, shadowing may occur in the vapor deposition process, which may reduce the utilization efficiency of the vapor deposition material 98. Therefore, it is preferable that the vapor deposition mask 20 is manufactured so that the width β of the top portion 43 does not become excessively large. For example, the width β of the top part 43 is preferably 2 μm or less. Note that the width β of the top portion 43 generally varies depending on the direction in which the vapor deposition mask 20 is cut. For example, the widths β of the top portions 43 shown in FIGS. 5 and 7 may be different from each other. In this case, the vapor deposition mask 20 may be configured such that the width β of the top portion 43 is 2 μm or less when the vapor deposition mask 20 is cut in any direction.

  In addition, as shown in FIG. 6, etching may be implemented so that two adjacent 2nd recessed parts 35 may be connected depending on a place. That is, a place where the second surface 21 b of the base material 21 does not remain may exist between two adjacent second recesses 35. Although not shown, the etching may be performed so that two adjacent second recesses 35 are connected over the entire area of the second surface 21b.

  When the vapor deposition mask device 10 is accommodated in the vapor deposition device 90 as shown in FIG. 1, the first surface 20 a of the vapor deposition mask 20 faces the organic EL substrate 92 as shown by a two-dot chain line in FIG. 5. The second surface 20 b of the vapor deposition mask 20 is located on the crucible 94 side that holds the vapor deposition material 98. Therefore, the vapor deposition material 98 adheres to the organic EL substrate 92 through the second recess 35 whose opening area is gradually reduced. In FIG. 5, the deposition material 98 moves along the normal direction N of the organic EL substrate 92 from the crucible 94 toward the organic EL substrate 92 as indicated by an arrow from the second surface 20 b side to the first surface 20 a. In addition, the organic EL substrate 92 may move in a direction greatly inclined with respect to the normal direction N of the organic EL substrate 92. At this time, if the thickness of the vapor deposition mask 20 is large, the vapor deposition material 98 that moves obliquely is likely to be caught on the top portion 43, the wall surface 36 of the second concave portion 35, and the wall surface 31 of the first concave portion 30. The ratio of the vapor deposition material 98 that cannot pass through 25 increases. Therefore, in order to increase the utilization efficiency of the vapor deposition material 98, the thickness t of the vapor deposition mask 20 is reduced, thereby reducing the height of the wall surface 36 of the second recess 35 and the wall surface 31 of the first recess 30. It is considered preferable. That is, it can be said that it is preferable to use the base material 21 having a thickness t as small as possible within the range in which the strength of the vapor deposition mask 20 can be secured as the base material 21 for constituting the vapor deposition mask 20. Considering this point, in the present embodiment, the thickness t of the vapor deposition mask 20 is preferably set to 50 μm or less, for example, 5 μm or more and 50 μm or less. The thickness t is the thickness of the surrounding region 23, that is, the thickness of the portion of the vapor deposition mask 20 where the first recess 30 and the second recess 35 are not formed. Accordingly, it can be said that the thickness t is the thickness of the substrate 21.

  In FIG. 5, a straight line L <b> 1 that passes through the connection portion 41, which is a portion having the minimum opening area of the through hole 25, and another arbitrary position of the wall surface 36 of the second recess 35 is a normal direction of the vapor deposition mask 20. The minimum angle made with respect to N is represented by the symbol θ1. In order to make the vapor deposition material 98 moving obliquely reach the organic EL substrate 92 as much as possible without reaching the wall surface 36, it is advantageous to increase the angle θ1. In order to increase the angle θ1, in addition to reducing the thickness t of the vapor deposition mask 20, it is also effective to reduce the width β of the top portion 43 described above.

In FIG. 7, the symbol α represents the width of a portion (hereinafter also referred to as a rib portion) remaining in the effective region 22 of the first surface 21 a of the base material 21 without being etched. The width α of the rib part and the dimension r ₂ of the through part 42 are appropriately determined according to the dimension of the organic EL display device and the number of display pixels. For example, the width α of the rib portion is not less than 5 μm and not more than 40 μm, and the dimension r ₂ of the through portion 42 is not less than 10 μm and not more than 60 μm.

  Although not limited, the vapor deposition mask 20 according to the present embodiment is particularly effective when an organic EL display device having a pixel density of 450 ppi or more is manufactured. Hereinafter, an example of the dimensions of the vapor deposition mask 20 required for producing such an organic EL display device having a high pixel density will be described with reference to FIG. FIG. 8 is an enlarged cross-sectional view of the through hole 25 of the vapor deposition mask 20 shown in FIG.

In FIG. 8, as a parameter related to the shape of the through hole 25, the distance from the first surface 20 a of the vapor deposition mask 20 to the connection portion 41 in the direction along the normal direction N of the vapor deposition mask 20, that is, the first concave portion. the height of the wall 31 of the 30 is represented by reference numeral _{r 1.} Furthermore, the first recess 30 dimensions of the first recess 30 in the portion connected to the second recess 35, i.e. the dimension of the through region 42 is represented by reference numeral r _2. Further, in FIG. 8, the angle formed by the straight line L2 connecting the connecting portion 41 and the leading edge of the first recess 30 on the first surface 21a of the base material 21 with respect to the normal direction N of the base material 21 is It is represented by the symbol θ2.

The case of manufacturing an organic EL display apparatus having the above pixel density 450Ppi, dimension _{r 2} of the penetrating part 42 is preferably set below and 60μm or 10 [mu] m. Accordingly, it is possible to provide the vapor deposition mask 20 that can produce an organic EL display device having a high pixel density. Preferably, the height r ₁ of the wall surface 31 of the first recess 30 is set to 6 μm or less.

  Next, the above described angle θ2 shown in FIG. 8 will be described. Vapor deposition that can reach the organic EL substrate 92 out of the vapor deposition material 98 that is inclined with respect to the normal direction N of the base material 21 and has passed through the through portion 42 in the vicinity of the connection portion 41. This corresponds to the maximum value of the inclination angle of the material 98. This is because the vapor deposition material 98 that has come through the connecting portion 41 at an inclination angle larger than the angle θ2 adheres to the wall surface 31 of the first recess 30 before reaching the organic EL substrate 92. Therefore, by reducing the angle θ2, it is possible to suppress the vapor deposition material 98 that has come through at a large inclination angle and passed through the through portion 42 from adhering to the organic EL substrate 92. It can suppress that the vapor deposition material 98 adheres to a part outside the part which overlaps the penetration part 42 among these. That is, reducing the angle θ2 leads to suppression of variations in the area and thickness of the vapor deposition material 98 attached to the organic EL substrate 92. From such a viewpoint, for example, the through hole 25 is formed such that the angle θ2 is 45 degrees or less. In FIG. 8, the dimension of the first recess 30 in the first surface 21a, that is, the opening dimension of the through hole 25 in the first surface 21a is larger than the dimension r2 of the first recess 30 in the connection part 41. An example is shown. That is, the example in which the value of the angle θ2 is a positive value is shown. However, although not shown, the dimension r2 of the first recess 30 in the connection part 41 may be larger than the dimension of the first recess 30 in the first surface 21a. That is, the value of the angle θ2 may be a negative value.

  Next, a method for manufacturing the vapor deposition mask 20 will be described.

Metal Plate Manufacturing Method First, a metal plate manufacturing method used for manufacturing a vapor deposition mask will be described.

(Rolling process)
First, as shown in FIG. 9, a base material 60 made of an iron alloy containing nickel is prepared, and this base material 60 is directed to a rolling device 66 including a pair of rolling rolls 66a and 66b, and is indicated by an arrow D1. Transport along the direction. The base material 60 that has reached between the pair of rolling rolls 66a and 66b is rolled by the pair of rolling rolls 66a and 66b. As a result, the base material 60 is reduced in thickness and stretched along the conveying direction. It is. Thereby, the metal plate 64 having a thickness T0 can be obtained. As shown in FIG. 9, the wound body 62 may be formed by winding a metal plate 64 around a core 61. The thickness T0 is, for example, not less than 10 μm and not more than 50 μm.

  In addition, FIG. 9 only shows the outline of a rolling process, and the specific structure and procedure for implementing a rolling process are not specifically limited. For example, the rolling process includes a hot rolling process in which the base material is processed at a temperature equal to or higher than a temperature at which the crystal arrangement of the invar material constituting the base material 60 is changed, and a base material at a temperature lower than the temperature at which the crystal arrangement of the invar material is changed. It may include a cold rolling process for processing. Moreover, the direction at the time of passing the base material 60 and the metal plate 64 between a pair of rolling rolls 66a and 66b is not restricted to one direction. For example, in FIGS. 9 and 10, by repeatedly passing the base material 60 and the metal plate 64 between the pair of rolling rolls 66a and 66b in the direction from the left side to the right side of the paper surface and in the direction from the right side to the left side of the paper surface, The base material 60 and the metal plate 64 may be gradually rolled.

(Slit process)
Then, you may implement the slit process which cuts off the both ends in the width direction of the metal plate 64 obtained by the rolling process over a predetermined range so that the width | variety of the metal plate 64 may become in a predetermined range. This slit process is performed in order to remove cracks that may occur at both ends of the metal plate 64 due to rolling. By performing such a slit process, it is possible to prevent the phenomenon that the metal plate 64 is broken, that is, so-called plate breakage, from being caused by a crack.

(Annealing process)
Thereafter, in order to remove the residual stress accumulated in the metal plate 64 by rolling, the metal plate 64 may be annealed using an annealing device 67 as shown in FIG. As shown in FIG. 10, the annealing process may be performed while pulling the metal plate 64 in the transport direction (longitudinal direction). That is, the annealing step may be performed as continuous annealing while being conveyed, not so-called batch-type annealing.

  Preferably, the above-described annealing step is performed in a non-reducing atmosphere or an inert gas atmosphere. Here, the non-reducing atmosphere is an atmosphere that does not contain a reducing gas such as hydrogen. “Does not contain reducing gas” means that the concentration of reducing gas such as hydrogen is 0.5% or less. The inert gas atmosphere is an atmosphere in which the concentration of the reducing gas is 0.5% or less and the concentration of an inert gas such as argon gas, helium gas, or nitrogen gas is 90% or more. By performing the annealing step in a non-reducing atmosphere or an inert gas atmosphere, it is possible to suppress the formation of nickel compounds such as nickel hydroxide on the surface layer of the metal plate 64.

  By performing the annealing step, a metal plate 64 having a thickness T0 from which residual strain has been removed to some extent can be obtained.

  In addition, you may produce the elongate metal plate 64 of thickness T0 by repeating the above-mentioned rolling process, a slit process, and an annealing process in multiple times. FIG. 10 shows an example in which the annealing process is performed while pulling the metal plate 64 in the longitudinal direction. However, the present invention is not limited to this, and the annealing process is performed by winding the metal plate 64 around the core 61. You may carry out in the state. That is, batch-type annealing may be performed. In the case where the annealing process is performed in a state where the metal plate 64 is wound around the core 61, the metal plate 64 may be wrinkled with a warp corresponding to the winding diameter of the wound body 62. Therefore, depending on the winding diameter of the wound body 62 and the material constituting the base material 60, it is advantageous to perform the annealing step while pulling the metal plate 64 in the longitudinal direction.

(Cutting process)
Thereafter, both ends of the metal plate 64 in the width direction are cut off over a predetermined range, thereby performing a cutting step of adjusting the width of the metal plate 64 to a desired width. In this way, a metal plate 64 having a desired thickness and width can be obtained.

  By the way, when the present inventors conducted extensive research, it was found that many inclusions exist in the surface layer of the metal plate 64 after rolling. FIG. 11 is a cross-sectional view showing a state in which inclusions 64c exist in the surface layer of the metal plate 64 obtained by rolling. The inclusion is a granular substance made of a compound containing a metal element other than iron such as aluminum or magnesium. The average value of the particle diameter of the inclusions 64c is, for example, not less than 0.5 μm and not more than 20 μm. The average particle size of the inclusions 64c may be 0.5 μm or more and 10 μm or less, or may be 0.5 μm or more and 5 μm or less. Examples of the compound include oxides, sulfides, carbides, nitrides, and intermetallic compounds.

  As shown in FIG. 11, many inclusions 64 c are present in the first surface layer on the first surface 64 a side of the metal plate 64, which is located within the range represented by the symbol T <b> 1 in the thickness direction of the metal plate 64. Similarly, many inclusions 64c are also present in the second surface layer on the second surface 64b side of the metal plate 64, which is located within the range represented by the symbol T2 in the thickness direction of the metal plate 64. The first surface layer T1 is, for example, a portion within 5 μm in the thickness direction from the first surface 64a of the rolled metal plate 64. The second surface layer T2 is, for example, a portion within 5 μm in the thickness direction from the second surface 64b of the rolled metal plate 64. Further, as shown in FIG. 11, the inclusion 64c is hardly present in the intermediate layer T3 located between the first surface layer T1 and the second surface layer T2.

  FIG. 12 is a cross-sectional view showing a process of forming the first recess 30 by etching the metal plate 64 shown in FIG. 11 from the first surface 64a side. When the etching proceeds to the place where the inclusion 64c exists, the inclusion 64c is exposed to the wall surface 31 of the first recess 30 as shown in FIG. In the state shown in FIG. 12, most of the surface of the inclusions 64 c exposed on the wall surface 31 is in contact with the iron alloy that constitutes the metal plate 64. It is fixed.

  FIG. 13 is a cross-sectional view showing a step of enlarging the first recess 30 by further etching from the state shown in FIG. As the etching proceeds, most of the surface of the inclusions 64 c exposed on the wall surface 31 in FIG. 12 does not come into contact with the iron alloy constituting the metal plate 64. As a result, the inclusion 64c is detached from the metal plate 64, and as shown in FIG. 13, the place where the inclusion 64c was present in the wall surface 31 may be the recessed portion 31a. Such a dent may also occur on the wall surface 36 of the second recess 35 formed on the second surface 64 b side of the metal plate 64.

  In the depression, the etching proceeds faster than the other portions. As a result, it is conceivable that the effect of the depression appears in the shape of the above-described through hole 25 including the first recess 30 and the second recess 35. FIG. 14 is a cross-sectional view showing an example of a vapor deposition mask 20 manufactured using a metal plate 64 in which many inclusions 64c exist in the surface layers T1 and T2. As shown in FIG. 14, the inventors of the present invention have made extensive studies. As shown in FIG. 14, the effect of the recess formed by the separation of the inclusions 64 c is greater on the first surface 20 a side than on the second surface 20 b side of the vapor deposition mask 20. I found that it appears a lot. For example, as shown in FIG. 14, a recess 31 a reaching the first surface 20 a of the vapor deposition mask 20 can be formed on the wall surface 31 of the first recess 30. In addition, the connection portion 41 may be formed with a chipped portion 41a due to the recessed portion.

  8 described above is determined by the position of the wall surface 31 of the first recess 30 and the position of the connecting portion 41 on the first surface 20a. As described above, the angle θ <b> 2 corresponds to the maximum value of the inclination angle in the flying direction of the vapor deposition material 98 that can reach the organic EL substrate 92. Therefore, the recess 31a and the chipped portion 41a shown in FIG. 14 cause variations in the range in the flying direction of the vapor deposition material 98 that can reach the organic EL substrate 92. For this reason, when the hollow part 31a and the chip | tip part 41a exist in the through-hole 25, it is thought that the dimensional accuracy and position accuracy of the vapor deposition material which adheres to the organic EL substrate 92 through the through-hole 25 will fall. .

  In order to solve such a problem, in the present embodiment, the surface layer removal for removing the surface layer of the metal plate 64 is performed before the step of etching the metal plate 64 to form the through hole 25 in the metal plate 64. Propose to implement the process. Thereby, the part in which many inclusions 64c exist among the metal plates 64 can be removed. As a result, it is possible to suppress variation in the shape of the through-hole 25 due to the recess formed by the removal of the inclusion 64c. Hereinafter, the manufacturing method of a vapor deposition mask including a surface layer removal process is demonstrated. In the following description, a metal plate from which the surface layer has been removed by performing the surface layer removing step is denoted by reference numeral 64z.

Method for Manufacturing Deposition Mask A method for manufacturing the deposition mask 20 using the metal plate 64 will be described mainly with reference to FIGS. FIG. 15 is a diagram illustrating a manufacturing apparatus 70 that manufactures the vapor deposition mask 20 using the metal plate 64. First, a wound body 62 in which a metal plate 64 is wound around a core 61 is prepared. Then, by rotating the core 61 and unwinding the wound body 62, a metal plate 64 extending in a strip shape is supplied as shown in FIG.

  The supplied metal plate 64 is conveyed by the conveyance roller 75 in order to the surface layer removing device 71, the processing device 72, and the separation device 73. The surface layer removing device 71 performs a surface layer removing step of removing at least the first surface layer T1 on the first surface 64a side among the surface layers of the metal plate 64 obtained by rolling. The processing device 72 performs a processing step of processing the metal plate 64z from which the surface layer has been removed to form the through hole 25 in the metal plate 64z. In the present embodiment, a large number of through holes 25 corresponding to the plurality of vapor deposition masks 20 are formed in the metal plate 64z. In other words, a plurality of vapor deposition masks 20 are assigned to the metal plate 64z. The separation device 73 performs a separation step of separating a portion of the metal plate 64z in which the plurality of through holes 25 corresponding to one vapor deposition mask 20 are formed from the metal plate 64z. Thus, the sheet-like vapor deposition mask 20 can be obtained.

(Surface layer removal process)
First, the surface layer removal step will be described with reference to FIGS. In the surface layer removing step, for example, as shown in FIG. 16, the spray device 71 a sprays the etching solution toward the first surface 64 a of the metal plate 64, and contacts the etching solution to the first surface 64 a of the metal plate 64. (Injection process). As an etching solution, for example, a ferric chloride solution can be used. By performing such a wet etching process, the first surface layer T1 can be removed over a predetermined range E1 in the thickness direction of the metal plate 64 as shown in FIG. The range E1 for removing the first surface layer T1 in the thickness direction is, for example, not less than 0.5 μm and not more than 20 μm, preferably not less than 0.5 μm and not more than 10 μm, more preferably not less than 0.5 μm and not more than 5 μm. . By appropriately setting the range E1, the first surface 64a of the metal plate 64z can be constituted by the intermediate layer T3 in which the inclusions 64c are hardly present. The thickness T4 of the metal plate 64z after the first surface layer T1 is removed over a predetermined range is, for example, 5 μm or more and 50 μm or less.

  By the way, when injecting etching liquid toward the 1st surface 64a in the state where the 1st surface 64a of the metal plate 64 faces upwards, etching solution stagnates on the 1st surface 64a temporarily. As a result, it is conceivable that the etching proceeds excessively or the etching uniformity becomes low. In consideration of such a problem, preferably, as shown in FIG. 16, in the injection step, the etching solution is injected toward the first surface 64a with the first surface 64a of the metal plate 64 facing downward. In this case, the etching solution after adhering to the first surface 64a and dissolving the first surface layer T1 naturally falls or flows from the first surface 64a due to gravity. Thereby, it can suppress that etching liquid retains on the 1st surface 64a. For this reason, it can suppress that the 1st surface 64a of the metal plate 64 is etched excessively, and can improve the uniformity of an etching. Thereby, the thickness T4 of the metal plate 64z can be precisely controlled.

(Processing process)
Next, a processing step for forming the through hole 25 in the metal plate 64z will be described with reference to FIGS. In addition, in FIG. 18 thru | or FIG. 25, illustration of the inclusion 64c is abbreviate | omitted.

  The process of processing the metal plate 64z includes a step of etching the long metal plate 64z using the photolithography technique to form the first recess 30 on the metal plate 64z from the first surface 64a side, Etching the metal plate 64z to form the second recess 35 on the metal plate 64z from the second surface 64b side. And the through-hole 25 is produced in the metal plate 64z when the 1st recessed part 30 and the 2nd recessed part 35 which were formed in the metal plate 64z mutually communicate. In the example described below, the first recessed portion 30 forming step is performed before the second recessed portion 35 forming step, and between the first recessed portion 30 forming step and the second recessed portion 35 forming step, The process of sealing the produced 1st recessed part 30 is implemented. Hereinafter, details of each process will be described.

  First, as shown in FIG. 18, resist films 65c and 65d containing a negative photosensitive resist material are formed on the first surface 64a and the second surface 64b of the metal plate 64z. For example, a coating liquid containing a photosensitive resist material such as casein is applied onto the first surface 64a and the second surface 64b of the metal plate 64z, and then the coating liquid is dried, whereby the resist films 65c and 65d are formed. Form.

Next, exposure masks 68a and 68b that prevent light from being transmitted to the regions to be removed of the resist films 65c and 65d are prepared, and the exposure masks 68a and 68b are respectively formed as shown in FIG. Place on top. At this time, an alignment step of adjusting the relative positional relationship between the exposure mask 68a on the first surface 64a side and the exposure mask 68b on the second surface 64b side may be performed. As the exposure masks 68a and 68b, for example, glass dry plates are used in which light is not transmitted to the regions to be removed of the resist films 65c and 65d. Thereafter, the exposure masks 68a and 68b are sufficiently adhered to the resist films 65c and 65d by vacuum adhesion.
As the photosensitive resist material, a positive type may be used. In this case, an exposure mask that transmits light to a region to be removed of the resist film is used as the exposure mask.

  Thereafter, the resist films 65c and 65d are exposed through the exposure masks 68a and 68b (exposure process). Further, the resist films 65c and 65d are developed in order to form images on the exposed resist films 65c and 65d (development process). As described above, as shown in FIG. 20, the first resist pattern 65a is formed on the first surface 64a of the metal plate 64z, and the second resist pattern 65b is formed on the second surface 64b of the metal plate 64z. be able to. The development process may include a resist heat treatment process for increasing the hardness of the resist films 65c and 65d or for causing the resist films 65c and 65d to be more firmly adhered to the metal plate 64z. The resist heat treatment step can be performed, for example, at room temperature or higher and 400 ° C. or lower.

  Next, as shown in FIG. 21, a first surface etching step is performed in which a region of the first surface 64a of the metal plate 64z that is not covered with the first resist pattern 65a is etched using a first etching solution. . For example, the first etching liquid is sprayed from the nozzle disposed on the side facing the first surface 64a of the metal plate 64z to be conveyed toward the first surface 64a of the metal plate 64z through the first resist pattern 65a. . As a result, as shown in FIG. 21, erosion by the first etching solution proceeds in a region of the metal plate 64z that is not covered with the first resist pattern 65a. As a result, a large number of first recesses 30 are formed in the first surface 64a of the metal plate 64z. As the first etching solution, for example, a solution containing a ferric chloride solution and hydrochloric acid is used.

  Thereafter, as shown in FIG. 22, the first recess 30 is covered with a resin 69 having resistance to a second etching solution used in a subsequent second surface etching step. That is, the first recess 30 is sealed with a resin 69 having resistance to the second etching solution. In the example shown in FIG. 22, a film of resin 69 is formed so as to cover not only the formed first recess 30 but also the first surface 64a (first resist pattern 65a).

  Next, as shown in FIG. 23, the second surface 64b of the metal plate 64z is etched on the region not covered with the second resist pattern 65b, thereby forming the second recess 35 on the second surface 64b. An etching process is performed. The second surface etching process is performed until the first recess 30 and the second recess 35 communicate with each other, thereby forming the through hole 25. As the second etching solution, for example, a solution containing a ferric chloride solution and hydrochloric acid is used in the same manner as the first etching solution.

  Note that the erosion by the second etching solution is performed on the portion of the metal plate 64z that is in contact with the second etching solution. Therefore, erosion does not proceed only in the normal direction N (thickness direction) of the metal plate 64z but also proceeds in the direction along the plate surface of the metal plate 64z. Here, preferably, in the second surface etching step, two second recesses 35 respectively formed at positions facing two adjacent holes 66a of the second resist pattern 65b are positioned between the two holes 66a. It ends before joining at the back side of the bridge portion 67a. As a result, as shown in FIG. 24, the above-described top portion 43 can be left on the second surface 64b of the metal plate 64z.

  Thereafter, as shown in FIG. 25, the resin 69 is removed from the metal plate 64z. The resin 69 can be removed by using, for example, an alkaline stripping solution. When the alkaline stripping solution is used, as shown in FIG. 25, the resist patterns 65a and 65b are also removed simultaneously with the resin 69. In addition, after removing the resin 69, the resist patterns 65a and 65b may be removed separately from the resin 69 by using a remover different from the remover for removing the resin 69.

(Separation process)
Then, the vapor deposition mask 20 can be obtained by isolate | separating the part in which the some through-hole 25 corresponding to the vapor deposition mask 20 for one sheet was formed from the metal plate 64z.

(Operation of this embodiment)
In the manufacturing method of the vapor deposition mask 20 according to the present embodiment, the first surface layer T1 on the first surface 64a side of the metal plate 64 is formed before the metal plate 64 is processed to form the through hole 25 in the metal plate 64. The surface layer removal process to remove is implemented. Thereby, the metal plate 64z in which the density of the inclusions 64c on the first surface 64a side is reduced can be obtained. As a result, it is possible to suppress variation in the shape of the through-hole 25 due to the recess formed by the removal of the inclusion 64c. Therefore, the dimensional accuracy and position accuracy of the vapor deposition material that adheres to the organic EL substrate 92 through the through hole 25 can be increased.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Modification of the removed surface layer)
In the above embodiment, only the first surface layer T1 on the first surface 64a side of the metal plate 64 is removed over the range E1 in the thickness direction, and the second surface layer T2 on the second surface 64b side is not removed. showed that. However, the present invention is not limited to this. As shown in FIG. 26, in addition to the first surface layer T1, the second surface layer T2 on the second surface 64b side of the metal plate 64 is further extended over a range E2 in the thickness direction. It may be removed. The range E2 for removing the second surface layer T2 in the thickness direction is, for example, not less than 0.5 μm and not more than 20 μm, preferably not less than 0.5 μm and not more than 10 μm, more preferably not less than 0.5 μm and not more than 5 μm. . The thickness T4 of the metal plate 64z after the first surface layer T1 and the second surface layer T2 are removed over a predetermined range is, for example, not less than 5 μm and not more than 50 μm.

(Modification of removal method)
In the above-described embodiment, the example in which the surface layer of the metal plate 64 is removed by spraying the etching liquid toward the surface of the metal plate 64 has been described. However, the method of removing the surface layer is particularly limited. Absent. For example, the surface layer of the metal plate 64 may be removed by immersing the metal plate 64 in an etching tank in which an etching solution is stored. Further, the surface layer of the metal plate 64 may be removed by bringing a member such as a cloth impregnated with an etching solution into contact with the surface of the metal plate 64.

DESCRIPTION OF SYMBOLS 10 Deposition mask apparatus 15 Frame 20 Deposition mask 21 Base material 22 Effective area 23 Peripheral area 25 Through-hole 30 1st recessed part 31 Wall surface 31a Depressed part 35 2nd recessed part 36 Wall surface 41 Connection part 41a Chip part 43 Top part 50 Intermediate product 64 Metal Plate 64c Inclusion 64z Metal plate 65a First resist pattern 65b Second resist pattern 65c First resist film 65d Second resist film 71 Surface layer removing device 72 Processing device 73 Separating device 90 Deposition device 92 Organic EL substrate 98 Deposition material

Claims (13)

A method for producing a metal plate used for producing a vapor deposition mask by forming a plurality of through holes,
Rolling a base material made of an iron alloy containing nickel to produce a metal plate including a first surface and a second surface;
And a surface layer removing step for removing at least the surface layer on the first surface side of the metal plate.   The said surface layer removal process is a manufacturing method of the metal plate of Claim 1 which removes the said surface layer within the range of 0.5 micrometer or more and 20 micrometers or less in the thickness direction of the said metal plate.   The said surface layer removal process is a manufacturing method of the metal plate of Claim 1 or 2 including the wet etching process which makes an etching liquid contact at least the said 1st surface of the said metal plate.   The said wet etching process is a manufacturing method of the metal plate of Claim 3 including the injection process which injects the said etching liquid toward the said 1st surface in the state in which the said 1st surface of the said metal plate faces downward.   The said surface layer removal process includes the process of removing the said surface layer by the said 1st surface side, and the process of removing the said surface layer by the said 2nd surface side. A method for producing a metal plate.   The method for manufacturing a metal plate according to any one of claims 1 to 5, wherein a thickness of the metal plate after the surface layer is removed by the surface layer removing step is 5 µm or more and 50 µm or less. A method of manufacturing a vapor deposition mask in which a plurality of through holes are formed,
A metal plate made of an iron alloy containing nickel and including a first surface located on the substrate side to which the vapor deposition material that has passed through the through-hole adheres and a second surface located on the opposite side of the first surface is prepared. A preparation process to
A surface layer removing step of removing at least the surface layer on the first surface side of the metal plate;
A process for etching the metal plate to form the through hole in the metal plate.   In the said preparation process, the said metal plate is a manufacturing method of the vapor deposition mask of Claim 7 produced by rolling the base material which consists of an iron alloy containing nickel.   The said surface layer removal process is a manufacturing method of the vapor deposition mask of Claim 7 or 8 which removes the said surface layer within the range of 0.5 micrometer or more and 20 micrometers or less in the thickness direction of the said metal plate.   The said surface layer removal process is a manufacturing method of the vapor deposition mask as described in any one of Claims 7 thru | or 9 including the wet etching process which makes an etching liquid contact at least the said 1st surface of the said metal plate.   The said wet etching process is a manufacturing method of the vapor deposition mask of Claim 10 including the spraying process which sprays the said etching liquid toward the said 1st surface in the state in which the said 1st surface of the said metal plate faces downward.   The said surface layer removal process includes the process of removing the said surface layer of the said 1st surface side, and the process of removing the said surface layer of the said 2nd surface side. A method for manufacturing a vapor deposition mask.   The manufacturing method of the vapor deposition mask as described in any one of Claims 7 thru | or 12 whose thickness of the said metal plate after the said surface layer is removed by the said surface layer removal process is 5 micrometers or more and 50 micrometers or less.

Images