JP6819925B2 - Thin-film mask, thin-film mask manufacturing method and organic semiconductor device manufacturing method - Google Patents

Description

The present invention relates to a vapor deposition mask. The present invention also relates to a method for producing a vapor deposition mask. The present invention also relates to a method for manufacturing an organic semiconductor device.

In recent years, display devices used in portable devices such as smartphones and tablet PCs are required to have high definition, for example, a pixel density of 400 ppi or more. Further, even in a portable device, there is an increasing demand for supporting ultra full high-definition, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

Among display devices, organic EL display devices are attracting attention because of their good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels in a desired pattern by using a vapor deposition mask including through holes arranged in a desired pattern is known. Specifically, first, the vapor deposition mask is brought into close contact with the organic EL substrate (deposited substrate) for the organic EL display device, and then both the adhered vapor deposition mask and the organic EL substrate are put into the vapor deposition apparatus. A thin-film deposition step is performed in which an organic material is deposited on an organic EL substrate. In this case, in order to precisely manufacture an organic EL display device having a high pixel density, it is required to accurately reproduce the position and shape of the through hole of the vapor deposition mask according to the design.

As a method for producing a vapor deposition mask, a method by etching treatment is also known, but as a method capable of reducing the thickness of the vapor deposition mask, for example, as disclosed in Patent Document 1, a vapor deposition mask is manufactured by using a plating treatment. There are known ways to do this. For example, in the method described in Patent Document 1, a conductive base material is first prepared. Next, a resist pattern is formed on the base material with a predetermined gap. This resist pattern is provided at a position where a through hole of the vapor deposition mask should be formed. After that, a plating solution is supplied to the gaps of the resist pattern, and a metal layer is deposited on the base material by electroplating. Then, by separating the metal layer from the base material, a thin-film deposition mask having a plurality of through holes can be obtained.

Japanese Unexamined Patent Publication No. 2001-234385

In the thin-film deposition step of depositing the vapor-deposited material on the organic EL substrate, the vapor-deposited material flying toward the vapor deposition mask passes through the through holes and adheres to the organic EL substrate. In this case, the vapor-deposited material not only moves toward the organic EL substrate along the normal direction of the vapor-deposited mask, but may also move in a direction greatly inclined with respect to the normal direction of the vapor-deposited mask. As a result, a part of the vapor deposition material adheres to the wall surface of the through hole and accumulates, so that a so-called vapor deposition shadow is generated. In this case, the utilization efficiency of the thin-film deposition material may decrease, and the thickness of the thin-film deposition material adhering to the organic EL substrate may become non-uniform, resulting in deterioration of the vapor deposition quality. If the thickness of the vapor-deposited material is non-uniform, there may be a problem that the entire pixel cannot emit light with uniform intensity.

Therefore, in order to suppress the occurrence of the thin-film deposition shadow, it is considered to reduce the thickness of the thin-film deposition mask. In the method of manufacturing a vapor deposition mask using a plating process, it is feasible to manufacture a metal layer of the vapor deposition mask with a thickness of, for example, 10 μm or less. However, if the thickness of the metal layer is reduced, the strength of the vapor deposition mask is reduced. When such a thin-film deposition mask is used repeatedly, the thin-film deposition mask may be deformed or damaged when the vapor-film deposition mask is attached to or detached from the organic EL substrate or when the thin-film deposition mask is ultrasonically cleaned.

Further, in the vapor deposition process, the vapor deposition mask and the organic EL substrate come into close contact with each other due to the magnetic force from the magnet, but when the thickness of the vapor deposition mask becomes thin, the attractive force acting on the vapor deposition mask decreases, and the vapor deposition mask And the adhesion with the organic EL substrate may decrease. In this case, a minute gap is formed between the vapor deposition mask and the organic EL substrate, and the vapor deposition material can enter the gap. Therefore, the shape accuracy of the pixels formed by the vapor deposition material may decrease, and the vapor deposition quality may deteriorate.

The present invention has been made in consideration of such points, and provides a vapor deposition mask, a vapor deposition mask manufacturing method, and an organic semiconductor device manufacturing method capable of suppressing deformation and defects and improving the vapor deposition quality. The purpose is to do.

The present invention is a thin-film deposition mask, comprising a first metal layer and through holes provided in the first metal layer through which the vapor-deposited material passes when the vapor-deposited material is vapor-deposited on the substrate to be vapor-deposited. The first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, the central portion and the tip portion, and the vapor-deposited material is vapor-deposited on the substrate to be vapor-deposited. It has a first metal surface facing the thin-film deposition substrate, and the tip portion is the farthest from the first metal surface when viewed in a cross section along the normal direction of the thin-film deposition mask. A thin-film deposition mask in which the thickness of the tip portion at the first point is thicker than the thickness of the central portion.

In the vapor deposition mask according to the present invention, the tip portion has a second point located most inside the through hole, and a curvature extending from the first point to the second point and becoming convex toward the inside of the through hole. The first hole demarcation line in the shape may be further included.

In the vapor deposition mask according to the present invention, the position of the second point when viewed in the normal direction is on the side of the first point from the first metal surface, and the tip portion is along the normal direction. Even if it further includes a curved second hole demarcation line that extends from the second point to the first metal surface of the tip portion and becomes convex toward the inside of the through hole when viewed in a cross section. Good.

The present invention is a thin-film deposition mask, comprising a first metal layer and through holes provided in the first metal layer through which the vapor-deposited material passes when the vapor-deposited material is vapor-deposited on the substrate to be vapor-deposited. The first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, the central portion and the tip portion, and the vapor-deposited material is vapor-deposited on the substrate to be vapor-deposited. It has a first metal surface facing the thin-film deposition substrate, and the tip portion is the farthest from the first metal surface when viewed in a cross section along the normal direction of the thin-film deposition mask. The first point, the second point located most inside the through hole, and the position when viewed in the normal direction is on the side of the first point from the first metal surface, and the first point. A curved first hole demarcation line extending from the second point to the inside of the through hole and extending from the second point to the first metal surface of the tip portion of the through hole. A thin-film deposition mask that includes a curved second hole demarcation line that is convex inward.

In the vapor deposition mask according to the present invention, when viewed in a cross section along the normal direction, a line passing through the second point and the third point where the first metal surface and the second hole demarcation line intersect. The angle formed with respect to the normal direction may be greater than 0 ° and may be 45 ° or less.

In the vapor deposition mask according to the present invention, the radius of curvature of the first hole demarcation line may be 0.5 to 5 μm.

In the vapor deposition mask according to the present invention, a recess may be formed on the first metal surface.

In the vapor deposition mask according to the present invention, the width of the portion of the first metal surface on which the recessed portion is not formed may be in the range of 0.5 to 5 μm.

In the vapor deposition mask according to the present invention, the second metal layer provided on the side of the first metal layer opposite to the side of the first metal surface, further comprising a second metal layer provided with the through holes. May be.

In the vapor deposition mask according to the present invention, the second metal layer is provided on the side of the first metal layer opposite to the side of the first metal surface, and further includes a second metal layer provided with the through holes. When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the contour of the connecting portion connecting the first metal layer and the second metal layer is formed on the first metal surface. The outer edge of the recessed portion may be surrounded.

In the vapor deposition mask according to the present invention, the second metal layer may be a plating layer.

In the vapor deposition mask according to the present invention, the first metal layer may be a plating layer.

In the vapor deposition mask according to the present invention, the thickness of the central portion may be 5 μm or less.

The present invention is a method for producing a thin-film deposition mask, wherein a first metal having through holes is provided on the conductive pattern by a step of preparing a base material on which a predetermined conductive pattern is formed and a plating process on the conductive pattern. The first metal layer includes a step of forming a layer, the first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, and the central portion and the tip portion. It has a first metal surface facing the substrate to be deposited, and the tip portion is the first point farthest from the first metal surface when viewed in a cross section along the normal direction of the vapor deposition mask. A method for producing a thin-film deposition mask, wherein the thickness of the tip portion at the first point is thicker than the thickness of the central portion.

In the vapor deposition mask manufacturing method according to the present invention, the tip portion has a second point located most inside the through hole, and extends from the first point to the second point and is convex toward the inside of the through hole. It may further include a curved first hole demarcation line.

The present invention is a method for producing a vapor deposition mask, wherein a first metal having through holes is provided on the conductive pattern by a step of preparing a base material on which a predetermined conductive pattern is formed and a plating process on the conductive pattern. The first metal layer includes a step of forming a layer, the first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, and the central portion and the tip portion. It has a first metal surface facing the substrate to be vaporized, and the tip portion is the first point farthest from the first metal surface when viewed in a cross section along the normal direction of the vapor deposition mask. The second point is located most inside the through hole and the position when viewed in the normal direction is on the side of the first point from the first metal surface, and the first point to the second point. A curved first hole demarcation line extending to a point and projecting toward the inside of the through hole, and extending from the second point to the first metal surface of the tip portion toward the inside of the through hole. A method for manufacturing a vapor deposition mask, which includes a curved second hole demarcation line that becomes convex.

The vapor deposition mask manufacturing method according to the present invention may further include a step of separating the base material from the first metal layer.

In the vapor deposition mask manufacturing method according to the present invention, in the step of separating the base material, the base material and the first metal layer separated from the conductive pattern have recesses having a shape corresponding to the conductive pattern. It may be formed.

In the vapor deposition mask manufacturing method according to the present invention, a step of forming a second metal layer provided with the through holes by plating treatment may be further provided on the first metal layer.

In the vapor deposition mask manufacturing method according to the present invention, the thickness of the central portion may be 5 μm or less.

The present invention is a method for manufacturing an organic semiconductor element, wherein a step of preparing a thin-film deposition mask according to the present invention and a step of using the thin-film deposition mask to deposit the vapor-deposited material on a substrate to be vapor-deposited in a pattern. A method for manufacturing an organic semiconductor element.

According to the present invention, it is possible to suppress deformation and chipping and improve the vapor deposition quality.

FIG. 1 is a diagram for explaining an embodiment of the present invention, and is a schematic plan view showing an example of a vapor deposition mask device including a vapor deposition mask. FIG. 2A is a diagram for explaining a method of vapor deposition using the vapor deposition mask apparatus shown in FIG. FIG. 2B is a cross-sectional view showing an organic EL display device manufactured by using the vapor deposition mask device shown in FIG. FIG. 3 is a partial plan view showing the vapor deposition mask shown in FIG. FIG. 4 is a diagram showing a cross-sectional shape of the vapor deposition mask shown in FIG. 3 along the line AA. FIG. 5A is a partially enlarged view showing the first metal layer and the second metal layer shown in FIG. FIG. 5B is a partially enlarged view showing the tip end portion of the first metal layer shown in FIG. 5A. FIG. 5C is a partially enlarged view showing another example of the first metal layer and the second metal layer shown in FIG. FIG. 5D is a partially enlarged view showing another example of the first metal layer and the second metal layer shown in FIG. FIG. 6 is a plan view showing the vapor deposition mask shown in FIG. 1 from the first surface side. FIG. 7A is a diagram showing one step of an example of a method for manufacturing a pattern substrate used for manufacturing the vapor deposition mask shown in FIG. FIG. 7B is a diagram showing one step of an example of a method for manufacturing a pattern substrate used for manufacturing the vapor deposition mask shown in FIG. FIG. 7C is a diagram showing one step of an example of a method for manufacturing a pattern substrate used for manufacturing the vapor deposition mask shown in FIG. FIG. 7D is a diagram showing one step of an example of a method for manufacturing a pattern substrate used for manufacturing the vapor deposition mask shown in FIG. FIG. 8A is a diagram showing one step of an example of a method of manufacturing the vapor deposition mask shown in FIG. 4 by a plating process. FIG. 8B is a diagram showing one step of an example of a method of manufacturing the vapor deposition mask shown in FIG. 4 by a plating process. FIG. 8C is a diagram showing one step of an example of a method of manufacturing the vapor deposition mask shown in FIG. 4 by a plating process. FIG. 9A is a diagram showing one step of an example of a method in which the vapor deposition mask shown in FIG. 4 is brought into close contact with the organic EL substrate. FIG. 9B is a diagram showing one step of an example of a method in which the vapor deposition mask shown in FIG. 4 is brought into close contact with the organic EL substrate. FIG. 9C is a diagram showing one step of an example of a method in which the vapor deposition mask shown in FIG. 4 is brought into close contact with the organic EL substrate. FIG. 10 is a partially enlarged view showing a modified example of the first metal layer shown in FIG. 5A. FIG. 11 is a plan view showing a modified example of the vapor deposition mask shown in FIG. FIG. 12 is a partially enlarged view showing a modified example of the conductive pattern shown in FIG. 7C. FIG. 13 is a partially enlarged view showing another modification of the first metal layer shown in FIG. 5A. FIG. 14 is a partially enlarged view showing another modification of the conductive pattern shown in FIG. 7C. FIG. 15 is a partially enlarged view showing another modification of the first metal layer shown in FIG. 5A.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, the scale, aspect ratio, etc. are appropriately changed from those of the actual product and exaggerated for the convenience of illustration and comprehension.

1 to 9C are diagrams for explaining an embodiment of the present invention. In the following embodiments and modifications thereof, a thin-film deposition mask manufacturing method used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device and a thin-film deposition mask device including a thin-film deposition mask are used. , The method of adhering to the organic EL substrate will be described as an example. However, the present invention is not limited to such an application, and the present invention can be applied to a vapor deposition mask manufacturing method used for various purposes.

In addition, in this specification, the terms "board", "sheet", and "film" are not distinguished from each other based only on the difference in designation. For example, "board" is a concept that includes members that can be called sheets or films.

Further, the "plate surface (sheet surface, film surface)" is a plate-like member (sheet-like) that is a target when the target plate-like (sheet-like, film-like) member is viewed as a whole and from a broad perspective. A surface that coincides with the plane direction of a member or film-like member). Further, the normal direction used for the plate-shaped (sheet-shaped, film-shaped) member refers to the normal direction with respect to the plate surface (sheet surface, film surface) of the member.

In addition, as used herein, terms such as "parallel," "orthogonal," "identical," "equivalent," and lengths and angles that specify the shape, geometrical conditions, and physical properties and their degree. In addition, the values of physical properties, etc. shall be interpreted including the range in which similar functions can be expected without being bound by the strict meaning.

(Evaporation mask device)
First, an example of a vapor deposition mask device including a vapor deposition mask will be described with reference to FIGS. 1 to 2B. Here, FIG. 1 is a plan view showing an example of a vapor deposition mask apparatus including a vapor deposition mask, FIG. 2A is a diagram for explaining how to use the vapor deposition mask apparatus shown in FIG. 1, and FIG. 2B is a diagram. It is sectional drawing which shows the organic EL display apparatus manufactured using the vapor deposition mask apparatus shown in FIG.

The thin-film deposition mask device 10 shown in FIGS. 1 and 2A includes a plurality of thin-film deposition masks 20 having a substantially rectangular shape in a plan view, and a frame 15 attached to a peripheral portion of the plurality of thin-film deposition masks 20. ing. The vapor deposition mask 20 is attached to the frame 15 at a pair of ends in the longitudinal direction of the vapor deposition mask 20. The frame 15 is held in a stretched state so that the vapor deposition mask 20 does not bend. The vapor deposition mask 20 and the frame 15 are fixed to each other by spot welding, for example. Each vapor deposition mask 20 is provided with a plurality of through holes 25 that penetrate the vapor deposition mask 20.

Next, a method of manufacturing the organic EL display device (organic semiconductor element) 100 will be described with reference to FIG. 2A. First, the vapor deposition mask 20 and the frame 15 are prepared. Next, as described above, the vapor deposition mask device 10 is manufactured by attaching the vapor deposition mask 20 to the frame 15. Then, the vapor deposition mask device 10 is used to deposit the vapor deposition material 98 on the organic EL substrate 92 in a pattern. In this way, as shown in FIG. 2B, the organic EL display device 100 in which patterned pixels are formed by the vapor deposition material 98 on the organic EL substrate 92 is manufactured.

When the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92, as shown in FIG. 2A, the vapor deposition mask device 10 is a substrate (deposited substrate) on which the vapor deposition mask 20 is a vapor deposition target, for example, the lower surface of the organic EL substrate 92. It is supported in the thin-film deposition apparatus 90 so as to face each other, and is used for vapor deposition of the thin-film deposition material 98 on the organic EL substrate 92.

More specifically, in the vapor deposition apparatus 90, the vapor deposition mask 20 and the organic EL substrate 92 come into close contact with each other due to the magnetic force from a magnet (not shown). In the vapor deposition apparatus 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are arranged below the vapor deposition mask apparatus 10. After depressurizing the inside of the vapor deposition apparatus 90 to a high vacuum, the vapor deposition material 98 in the crucible 94 is vaporized or sublimated by heating from the heater 96 and adheres to the surface of the organic EL substrate 92. As described above, a large number of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 passes through the through holes 25 and adheres to the organic EL substrate 92. As a result, the vapor deposition material 98 is formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20. In FIG. 2A, of the surfaces of the vapor deposition mask 20, the surface facing the organic EL substrate 92 during the vapor deposition step (hereinafter, also referred to as the first surface) is represented by reference numeral 20a. Further, among the surfaces of the vapor deposition mask 20, the surface located on the opposite side of the first surface 20a (hereinafter, also referred to as the second surface) is represented by reference numeral 20b. A vapor deposition source (here, a crucible 94) of the vapor deposition material 98 is arranged on the second surface 20b side.

As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective region 22. If it is desired to display colors in a plurality of colors, a vapor deposition machine equipped with a vapor deposition mask 20 corresponding to each color is prepared, and the organic EL substrate 92 is charged into each vapor deposition machine in order. Thereby, for example, the organic light emitting material for red, the organic light emitting material for green, and the organic light emitting material for blue can be vapor-deposited on the organic EL substrate 92 in this order.

By the way, the thin-film deposition treatment may be carried out inside the thin-film deposition apparatus 90 which has a high temperature atmosphere. In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 show the behavior of dimensional change based on their respective coefficients of thermal expansion. In this case, if the coefficient of thermal expansion of the vapor deposition mask 20 or frame 15 and the organic EL substrate 92 are significantly different, a positional shift occurs due to the difference in their dimensional changes, and as a result, the organic EL substrate 92 adheres to the organic EL substrate 92. The dimensional accuracy and position accuracy of the vapor-deposited material 98 are lowered. In order to solve such a problem, it is preferable that the coefficient of thermal expansion of the vapor deposition mask 20 and the frame 15 is a value equivalent to the coefficient of thermal expansion of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. Specifically, iron alloys such as an Invar material containing 34 to 38% by mass of nickel and a super Invar material containing cobalt in addition to nickel are used to form the vapor deposition mask 20 in the first metal layer 32 and the first metal layer 32, which will be described later. 2 It can be used as a material for the metal layer 37. In this specification, the numerical range represented by the symbol "-" includes the numerical values placed before and after the symbol "-". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less".

If the temperatures of the vapor deposition mask 20, the frame 15 and the organic EL substrate 92 do not reach high temperatures during the vapor deposition process, the coefficient of thermal expansion of the vapor deposition mask 20 and the frame 15 is taken as the coefficient of thermal expansion of the organic EL substrate 92. There is no particular need for equivalent values. In this case, various materials other than the above-mentioned iron alloy such as nickel and nickel-cobalt alloy can be used as the materials of the first metal layer 32 and the second metal layer 37, which will be described later, which constitute the vapor deposition mask 20.

(Evaporation mask)
Next, the vapor deposition mask 20 will be described in detail with reference to FIGS. 1, 3 to 5D. Here, FIG. 3 is a plan view showing the vapor deposition mask 20 from the side of the first surface 20a, and FIG. 4 is a cut of the vapor deposition mask 20 produced by the plating treatment along the line AA of FIG. It is sectional drawing which shows the case. 5A is a partially enlarged view showing the first metal layer and the second metal layer shown in FIG. 4, and FIG. 5B is a partially enlarged view showing the tip end portion of the first metal layer shown in FIG. 5A. 5C is a partially enlarged view showing another example of the first metal layer and the second metal layer shown in FIG. 4, and FIG. 5D is another example of the first metal layer and the second metal layer shown in FIG. It is a partially enlarged view which shows.

As shown in FIG. 1, in the present embodiment, the vapor deposition mask 20 has a substantially quadrangular contour in a plan view, and more accurately, a substantially rectangular contour in a plan view. The vapor deposition mask 20 includes an effective region 22 in which through holes 25 are formed in a regular arrangement, and a peripheral region 23 surrounding the effective region 22. The peripheral region 23 is a region for supporting the effective region 22, and is not a region through which the vapor-deposited material 98 intended to be vapor-deposited on the organic EL substrate 92 passes. For example, in the vapor deposition mask 20 used for vapor deposition of an organic light emitting material for the organic EL display device 100, the effective region 22 is the display region of the organic EL substrate 92 on which the organic light emitting material is vapor-deposited to form pixels. It is an area in the vapor deposition mask 20 facing the area. However, for various purposes, through holes and recesses may be formed in the peripheral region 23. In the example shown in FIG. 1, each effective region 22 has a substantially quadrangular contour in a plan view, or more accurately, a substantially rectangular contour in a plan view. Although not shown, each effective region 22 can have contours having various shapes depending on the shape of the display region of the organic EL substrate 92. For example, each effective region 22 may have a circular contour.

In the illustrated example, the plurality of effective regions 22 of the vapor deposition mask 20 are arranged in a row at predetermined intervals along one direction parallel to the longitudinal direction of the vapor deposition mask 20. In the illustrated example, one effective region 22 corresponds to one organic EL display device 100. That is, according to the thin-film deposition mask device 10 (thin-film deposition mask 20) shown in FIG. 1, multi-surface vapor deposition is possible.

As shown in FIG. 3, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged at predetermined pitches in the effective region 22 along two directions orthogonal to each other. There is. In the present embodiment, the through holes 25 are arranged in a grid pattern when the vapor deposition mask 20 is viewed along the normal direction of the vapor deposition mask 20. The shape of the through hole 25 and the like will be described in detail below. Here, the shape of the through hole 25 and the like when the vapor deposition mask 20 is formed by the plating process will be described.

As shown in FIG. 4, the vapor deposition mask 20 is provided on the first metal layer 32 and the first metal layer 32 in which the first opening 30 is provided in a predetermined pattern, and communicates with the first opening 30. It includes a second metal layer 37 provided with a second opening 35. The first metal layer 32 is a first plating layer produced by a plating treatment, and is arranged on the first surface 20a side of the vapor deposition mask 20 with respect to the second metal layer 37. The second metal layer 37 is a second plating layer produced by a plating treatment, and is arranged on the second surface 20b side of the vapor deposition mask 20 with respect to the first metal layer 32. In the example shown in FIG. 4, the first metal layer 32 constitutes the first surface 20a of the vapor deposition mask 20, and the second metal layer 37 constitutes the second surface 20b of the vapor deposition mask 20. As described above, the first surface 20a is a surface facing the organic EL substrate 92 during the vapor deposition process (see FIG. 2A). In this way, the first metal layer 32 is arranged on the side of the organic EL substrate 92 when the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 (during the vapor deposition step).

In the present embodiment, the first opening 30 and the second opening 35 communicate with each other to form a through hole 25 penetrating the vapor deposition mask 20. In this case, the opening size and opening shape of the through hole 25 on the first surface 20a side of the vapor deposition mask 20 are defined by the first opening 30 of the first metal layer 32. On the other hand, the opening size and opening shape of the through hole 25 on the second surface 20b side of the vapor deposition mask 20 are defined by the second opening 35 of the second metal layer 37. In other words, the through hole 25 is provided with both a shape defined by the first opening 30 of the first metal layer 32 and a shape defined by the second opening 35 of the second metal layer 37. There is. In this way, through holes 25 through which the thin-film deposition material 98 passes when the thin-film deposition material 98 is vapor-deposited on the organic EL substrate 92 are provided in the first metal layer 32 and the second metal layer 37.

As shown in FIG. 3, the first opening 30 and the second opening 35 forming the through hole 25 may have a substantially polygonal shape in a plan view. Here, an example is shown in which the first opening 30 and the second opening 35 have a substantially square shape, more specifically, a substantially square shape. Although not shown, the first opening 30 and the second opening 35 may have other substantially polygonal shapes such as a substantially hexagonal shape and a substantially octagonal shape. The "substantially polygonal shape" is a concept including a shape in which the corners of the polygon are rounded. Although not shown, the first opening 30 and the second opening 35 may have a circular shape. Further, as long as the second opening 35 has a contour surrounding the first opening 30 in a plan view, the shape of the first opening 30 and the shape of the second opening 35 need not be similar to each other.

In FIG. 4, reference numeral 41 represents a connecting portion to which the first metal layer 32 and the second metal layer 37 are connected. Further, reference numeral S0 represents the dimension of the through hole 25 in the connecting portion 41 between the first metal layer 32 and the second metal layer 37. Although FIG. 4 shows an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other, the present invention is not limited to this, and the first metal layer 32 and the second metal layer 37 are in contact with each other. Other layers may be interposed between them. For example, a catalyst layer for promoting the precipitation of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.

As shown in FIGS. 4 to 5B, the first metal layer 32 according to the present embodiment is located on the central portion 42 and on the side of the through hole 25 from the central portion 42 (more specifically, on the central side of the through hole 25). It has a tip portion 43 provided. Further, the first metal layer 32 has a first metal surface 32a provided on the central portion 42 and the tip portion 43, and a second metal surface 32b on the side opposite to the side of the first metal surface 32a. There is. Of these, the first metal surface 32a is a surface facing the organic EL substrate 92 during the vapor deposition process. That is, the first metal surface 32a constitutes the first surface 20a of the vapor deposition mask 20 described above. The second metal surface 32b is a surface on which the second metal layer 37 is provided. That is, the second metal layer 37 is provided on the second metal surface 32b. A recessed portion 44 corresponding to the shape of the conductive pattern 52, which will be described later, is formed on the first metal surface 32a. The recessed portion 44 is formed from the central portion 42 to the tip portion 43, although details will be described later.

The central portion 42 according to the present embodiment is a portion that overlaps the second metal layer 37 when viewed in the normal direction N of the vapor deposition mask 20. In other words, the central portion 42 is a portion between one connecting portion 41 and the other connecting portion 41. The tip portion 43 is a portion that protrudes inward of the through hole 25 from the second metal layer 37. As a result, the width of the first metal layer 32 having the tip portion 43 (the dimension along the arrangement direction of the through holes 25 between the through holes 25 adjacent to each other on the first surface 20a) becomes the second metal layer 37. (Dimension along the arrangement direction of the through holes 25 between the through holes 25 adjacent to each other on the second surface 20b).

With this configuration, as shown in FIG. 4, the opening dimension S2 of the through hole 25 (second opening 35) on the second surface 20b becomes the through hole 25 (first opening) on the first surface 20a. It is larger than the opening size S1 of the portion 30). Further, the size S0 of the through hole 25 in the connecting portion 41 is larger than the opening size S1 of the through hole 25 (first opening 30) in the first surface 20a. The tip portion 43 described above corresponds to a portion between the second point 45b (see FIGS. 5A and 5B described later) of the first metal layer 32 and the connection portion 41. In this way, the first opening 30 is defined by the tip 43.

Hereinafter, the advantages of forming the first metal layer 32 and the second metal layer 37 having such a tip portion 43 will be described.

The thin-film material 98 flying from the second surface 20b side of the thin-film mask 20 toward the thin-film mask 20 passes through the second opening 35 and the first opening 30 of the through hole 25 in order and adheres to the organic EL substrate 92. .. The region of the organic EL substrate 92 to which the vapor deposition material 98 adheres is mainly determined by the opening size S1 and the opening shape of the through hole 25 on the first surface 20a. By the way, as shown by the arrow from the second surface 20b side to the first surface 20a in FIG. 4, the vapor deposition material 98 moves from the pot 94 toward the organic EL substrate 92 along the normal direction N of the vapor deposition mask 20. In addition to this, the vapor deposition mask 20 may move in a direction that is significantly inclined with respect to the normal direction N. Here, assuming that the opening size S2 of the through hole 25 on the second surface 20b is the same as the opening size S1 of the through hole 25 on the first surface 20a, the vapor deposition mask 20 is greatly inclined with respect to the normal direction N. Most of the vapor-deposited material 98 that moves in the direction reaches and adheres to the wall surface 36 of the second opening 35 of the through hole 25 before passing through the through hole 25 and reaching the organic EL substrate 92. .. Therefore, in order to improve the utilization efficiency of the thin-film deposition material 98, it can be said that it is preferable to increase the opening size S2 of the second opening 35.

In FIG. 4, the angle formed by the straight line L1 passing through the end 38 of the second opening 35 and in contact with the tip 43 of the first metal layer 32 and the normal direction N of the vapor deposition mask 20 is represented by reference numeral θ1. Has been done. In order for the thin-film deposition material 98 that moves diagonally to reach the organic EL substrate 92 as much as possible without reaching the wall surface 36 of the second opening 35, it is advantageous to increase the angle θ1. For example, it is preferable that the angle θ1 is 45 ° or more. Therefore, the angle θ1 can be increased by having the tip portion 43 in which the first metal layer 32 projects toward the inside of the through hole 25 from the second metal layer 37.

The above-mentioned opening dimensions S0, S1, S2, the width of the first metal layer 32, and the width of the second metal layer 37 are appropriate in consideration of the pixel density of the organic EL display device 100, the desired value of the above-mentioned angle θ1, and the like. Is set to. For example, when the organic EL display device 100 having a pixel density of 400 ppi or more is manufactured, the opening size S0 of the through hole 25 in the connecting portion 41 can be set within the range of 15 to 60 μm. Further, the opening dimension S1 of the first opening 30 on the first surface 20a is set within the range of 10 to 50 μm, and the opening dimension S2 of the second opening 35 on the second surface 20b is within the range of 15 to 60 μm. Can be set to. As an example, in the organic EL display device 100 having a pixel density equivalent to 400 ppi, the opening size S1 of the first opening 30 is 40 μm, the width of the first metal layer 32 is 20 μm, and the width of the second metal layer 37 is 8 μm. Can be set. Further, when the organic EL display device 100 having a pixel density equivalent to 600 ppi is manufactured, the opening size S1 of the first opening 30 is 30 μm, the width of the first metal layer 32 is 15 μm, and the second metal layer 37 The width can be set to 5 μm. Further, when the organic EL display device 100 having a pixel density equivalent to 800 ppi is manufactured, the opening size S1 of the first opening 30 is 20 μm, the width of the first metal layer 32 is 10 μm, and the second metal layer 37 The width can be set to 4 μm.

The first metal layer 32 will be described in more detail below.

As shown in FIGS. 5A and 5B, the tip portion 43 penetrates the first point 45a farthest from the first metal surface 32a when viewed in a cross section along the normal direction N of the vapor deposition mask 20. It includes a second point 45b located inside the hole 25. The position of the second point 45b when viewed in the normal direction N is on the first point 45a side (second metal layer 37 side) from the first metal surface 32a. Here, the position when viewed in the normal direction N can be replaced with meaning the height from the first metal surface 32a. Therefore, when the position of the second point 45b when viewed in the normal direction N is on the side of the first point 45a from the first metal surface 32a, the second point 45b is two-dimensionally the first point 45a and the first point 45a. It does not mean that it is between the 1 metal surface 32a, but that the height of the 2nd point 45b is higher than that of the 1st metal surface 32a regardless of the position of the 2nd point 45b in the width direction. doing. Since the first point 45a is the farthest from the first metal surface 32a, the height of the first point 45a from the first metal surface 32a is the highest, and the height of the second point 45b is the first point. It can be said that it is lower than 45a.

In the present embodiment, the thickness t1 of the tip portion 43 at the first point 45a is thicker than the thickness t2 of the central portion 42. The thickness of the tip portion 43 is maximum at the first point 45a. Here, the thickness t1 means the height from the first metal surface 32a to the first point 45a, as shown in FIG. 5A. Similarly, the thickness t2 means the height from the first metal surface 32a to the second metal surface 32b of the central portion 42. For example, the thickness t2 is the thickness of the first metal layer 32 at the five points P1, P2, P3, P4, and P5 arranged at equal intervals in the width direction on the second metal surface 32b (from the first metal surface 32a). It can be the average value of the height of the central portion 42 up to the second metal surface 32b). When the wall surface 36 of the second metal layer 37 can be regarded as perpendicular to the second metal surface 32b of the central portion 42, the points P1 and P5 at both ends correspond to the connecting portions 41. Further, as shown in FIG. 5C, when viewed in a cross section along the normal direction N, a recessed portion r is formed between the wall surface 36 of the second metal layer 37 and the second metal surface 32b, and a connecting portion is formed. The 41 may be provided outside the through hole 25 with respect to the wall surface 36 of the second metal layer 37. In such a case, a virtual line X extending from a portion of the wall surface 36 that can be regarded as perpendicular to the second metal surface 32b of the central portion 42 toward the first metal layer 32 is provided, and the virtual line X and the first The intersections with the two metal surfaces 32b may be P1 and P5. Further, as shown in FIG. 5D, when viewed in a cross section along the normal direction N, a convex portion p is formed between the wall surface 36 of the second metal layer 37 and the second metal surface 32b, and a connecting portion is formed. The 41 may be provided inside the through hole 25 with respect to the wall surface 36 of the second metal layer 37. Even in such a case, a virtual line X extending from a portion of the wall surface 36 that can be regarded as perpendicular to the second metal surface 32b of the central portion 42 toward the first metal layer 32 is provided, and the virtual line X and the first The intersections with the two metal surfaces 32b may be P1 and P5. The method of measuring the height of the central portion 42 using the virtual line X can be applied even when the interface between the first metal layer 32 and the second metal layer 37 is not clear. In the present embodiment, the second metal layer 37 is provided on the central portion 42, and the central portion 42 has a substantially constant thickness in the width direction.

When measuring the thickness t1 of the tip portion 43 and the thickness t2 of the central portion, first, the sample containing the first metal layer 32 is cut into 5 mm square pieces and embedded in resin. Next, trimming is performed with a diamond knife so that the cross section shown in FIG. 4 can be obtained. At this time, a microtome (for example, an ultramicrotome manufactured by Leica Microsystems) is used for trimming to a portion 30 μm away from the measurement target position. Next, a cut surface for observation is produced by scraping the cut surface that has been trimmed. At this time, using a cross-section sample preparation device (for example, a cross section polisher manufactured by JOEL), the protrusion width is set to 30 μm, the voltage is set to 5 kV, and the time is set to 6 hours, and the cut surface is scraped by ion beam processing. Then, the cut surface of the obtained sample is measured. At this time, using a scanning electron microscope (for example, a scanning electron microscope manufactured by Carl Zeiss), the voltage is set to 5 kV, the working distance is set to 3 mm, the observation magnification is set to 5000 times or 20000 times, and the cut surface is observed. To do. In this way, the thickness t1 of the tip portion 43 and the thickness t2 of the central portion 42 can be measured. The observation magnification standard at the time of photographing is Polaroid 545.

The tip portion 43 includes a first hole demarcation line 46 extending from the first point 45a to the second point 45b when viewed in a cross section along the normal direction N. The first hole demarcation line 46 is formed in a curved shape that is convex toward the inside of the through hole 25. That is, the shape of the tip portion 43 according to the present embodiment is a curved shape having no corners as compared with a rectangular shape having corners. As a result, when the thin-film deposition material 98 is vapor-deposited, it is possible to prevent the thin-film deposition material 98 from adhering and accumulating on the first hole demarcation line 46, and it is possible to suppress the generation of the thin-film deposition shadow. Further, the thickness of the portion of the tip portion 43 on the side of the through hole 25 can be secured. The radius of curvature R of such a first hole demarcation line 46 is preferably 0.5 μm to 5 μm. When the thickness is 0.5 μm or more, the occurrence of thin-film deposition shadow can be effectively suppressed, and when the thickness is 5 μm or less, the thickness of the tip portion 43 can be effectively secured. Then, by effectively securing the thickness of the tip portion, when the vapor deposition mask 20 is ultrasonically cleaned, a part of the tip portion 43 (particularly, when the recess portion 44 is formed, the tip side from the recess portion 44). It is possible to prevent the part) from being deformed or lost.

Further, the tip portion 43 further includes a second hole demarcation line 47 extending from the second point 45b to the first metal surface 32a of the tip portion 43 when viewed in a cross section along the normal direction N. The second hole demarcation line 47 is formed in a curved shape that is convex toward the inside of the through hole 25. As a result, when the vapor deposition mask 20 is attached to or detached from the organic EL substrate 92 or when the vapor deposition mask 20 is ultrasonically cleaned, a part of the tip portion 43 (particularly, when the recessed portion 44 is formed, the recessed portion 44). It is possible to prevent the portion on the tip side from being deformed or missing.

Further, the tip portion 43 further includes a third hole demarcation line 48 extending from the first point 45a to the second metal surface 32b of the central portion 42. Such a first hole demarcation line 46, a second hole demarcation line 47, and a third hole demarcation line 48 are smoothly connected to each other to define the first opening 30 of the through hole 25.

The second hole demarcation line 47 and the first metal surface 32a intersect each other by a third point 45c when viewed in a cross section along the normal direction N and are connected to each other. The third point 45c defines the outer edge of the vapor deposition mask 20 on the first metal surface 32a. Further, the third point 45c is located outside the through hole 25 (on the side of the central portion 42) of the second point 45b. That is, the line passing through the second point 45b and the third point 45c is inclined with respect to the normal direction N, and is in the normal direction N of the line L2 passing through the second point 45b and the third point 45c. On the other hand, the angle θ2 formed is more than 0 ° and preferably 45 ° or less. As a result, the third point 45c where the first metal surface 32a and the second hole demarcation line 47 intersect can be positioned outside the through hole 25 with respect to the second point 45b. Therefore, when the vapor deposition mask 20 is attached to or detached from the organic EL substrate 92, a part of the tip portion 43 (particularly, when the recess portion 44 is formed, the portion on the tip side from the recess portion 44) is deformed or defective. It is possible to suppress such things. Further, by making the angle θ2 larger than 0 °, the strength of the tip portion 43 of the vapor deposition mask 20 can be increased. Further, by setting the angle θ2 to 45 ° or less, it is possible to prevent an excessive gap from being formed between the vapor deposition mask 20 and the organic EL substrate 92 when the vapor deposition material 98 is vapor-deposited. Therefore, it is possible to suppress the so-called thickening of the vapor deposition pattern, in which the vapor deposition material 98 wraps around the gap to form a vapor deposition pattern having a shape larger than the desired vapor deposition pattern.

Further, in FIG. 5B, the width of the portion of the first metal layer 32 that does not overlap with the conductive pattern 52 described later is represented by the reference numeral w. The width w is, for example, in the range of 0.5 to 5 μm. The dimensions of the conductive pattern 52 are set in consideration of this width w.

The recessed portion 44 will be described in detail below.

In the above-described embodiment and each modification, the base material provided with the conductive pattern 52 having a predetermined thickness as the pattern substrate 50 for carrying out the first film forming step for forming the first metal layer 32. 51 is used. Further, the first metal layer 32 is formed not only at a portion that overlaps with the conductive pattern 52 when viewed along the normal direction of the base material 51, but also at a portion that does not overlap with the conductive pattern 52. Therefore, when the vapor deposition mask 20 including the first metal layer 32 and the second metal layer 37 is separated from the base material 51 and the conductive pattern 52 of the pattern substrate 50, the vapor deposition mask 20 composed of the first metal layer 32 As shown in FIGS. 5A and 5B, a recess 44 having a shape corresponding to the conductive pattern 52 is formed on the first surface 20a (first metal surface 32a).

In the following description, of the first metal surface 32a, the portion where the recessed portion 44 is not formed is referred to as the outermost surface 32c, and the portion where the recessed portion 44 is formed is referred to as the recessed surface 44a. Further, the boundary between the outermost surface 32c and the recessed surface 44a of the recessed portion 44 is referred to as an outer edge 44e of the recessed portion 44. The outermost surface 32c is the surface of the first metal layer 32 deposited on the portion of the first metal layer 32 deposited in the first film forming step that does not overlap with the conductive pattern 52. In the normal direction of the vapor deposition mask 20, the distance between the outermost surface 32c and the second surface 20b is larger than the distance between the recessed surface 44a and the second surface 20b.

The depth D of the recessed portion 44 is determined according to the thickness of the conductive pattern 52 of the pattern substrate 50. For example, when the thickness of the conductive pattern 52 is in the range of 50 to 500 nm, the depth D of the recessed portion 44 is in the range of 50 to 500 nm. The thickness t2 of the central portion 42 of the first metal layer 32 is in the range of 0.5 to 5 μm, as in the case of the above-described embodiment.

FIG. 6 is a plan view showing a case where the vapor deposition mask 20 is viewed from the first surface 20a side along the normal direction of the vapor deposition mask 20. In FIG. 6, the outermost surface 32c and the recessed surface 44a of the first metal surface 32a are hatched differently from each other. Further, in FIG. 6, the end portion 38 of the second metal layer 37 formed on the second surface 20b side of the vapor deposition mask 20 and the connecting portion connecting the first metal layer 32 and the second metal layer 37 are connected. 41 is represented by a dotted line. When the wall surface 36 of the second metal layer 37 spreads parallel to the normal direction of the vapor deposition mask 20, the position of the connecting portion 41 coincides with the position of the end portion 38 of the second metal layer 37 in the plan view.

As shown in FIG. 6, the outermost surface 32c and the outer edge 44e of the recess 44 extend along the third point 45c and have a closed contour surrounding the through hole 25. The width w of the outermost surface 32c in the direction orthogonal to the contour line of the through hole 25 is equal to the width w of the portion of the first metal layer 32 that does not overlap with the conductive pattern 52, for example, 0.5 to 0.5B. It is within the range of 5 μm.

Preferably, as shown in FIG. 6, when the vapor deposition mask 20 is viewed along the normal direction of the vapor deposition mask 20, the contour of the connecting portion 41 to which the first metal layer 32 and the second metal layer 37 are connected is formed. , Surrounds the outer edge 44e of the recess 44. In other words, the second metal layer 37 is laminated on the portion of the first metal layer 32 in which the recessed portion 44 is formed. The advantages of such a configuration will be described later. The distance d between the outer edge 44e of the recessed portion 44 and the contour of the connecting portion 41 in the plane direction of the vapor deposition mask 20 is, for example, in the range of 1.0 to 16.5 μm.

Next, a method of manufacturing the vapor deposition mask 20 shown in FIG. 4 by using a plating process will be described with reference to FIGS. 7A to 8C.

(Pattern board preparation process)
First, the pattern substrate 50 is prepared. Here, as will be described later, the pattern substrate 50 is configured to have a base material 51 and a predetermined conductive pattern 52 formed on the base material 51. An example of a method for producing such a pattern substrate 50 will be described below.

First, the base material 51 is prepared. Next, as shown in FIG. 7A, a conductive layer 52a made of a conductive material is formed. The conductive layer 52a is a layer that becomes a conductive pattern 52 by being patterned.

As long as it has insulating properties and appropriate strength, the material constituting the base material 51 and the thickness of the base material 51 are not particularly limited. For example, glass, synthetic resin, or the like can be used as the material constituting the base material 51.

As the material constituting the conductive layer 52a, a conductive material such as a metal material or an oxide conductive material is appropriately used. Examples of metal materials include, for example, chromium and copper. Preferably, a material having high adhesion to the resist pattern 55, which will be described later, is used as a material constituting the conductive pattern 52. For example, when the resist pattern 55 is produced by patterning a so-called dry film such as a resist film containing an acrylic photocurable resin, it is expensive as a material constituting the conductive pattern 52 with respect to the dry film. It is preferable to use copper or a copper alloy having adhesiveness.

As will be described later, a first metal layer 32 is formed on the conductive pattern 52 formed by patterning the conductive layer 52a so as to cover the conductive pattern 52, and the first metal layer 32 is subsequently formed. It is separated from the conductive pattern 52 in the process of. Therefore, a recess 44 corresponding to the thickness of the conductive pattern 52 is usually formed on the surface of the first metal layer 32 on the side in contact with the conductive pattern 52. Considering this point, as long as the conductive pattern 52 has the conductivity required for the electrolytic plating treatment, the smaller the thickness of the conductive pattern 52, that is, the thickness of the conductive layer 52a, the higher the strength of the tip portion 43. It is preferable in terms of points. For example, the thickness of the conductive layer 52a is in the range of 50 to 500 nm.

Next, as shown in FIG. 7B, a resist pattern 53 having a predetermined pattern is formed on the conductive layer 52a. As a method for forming the resist pattern 53, a photolithography method or the like can be adopted as in the case of the resist pattern 55 described later. Then, as shown in FIG. 7C, the portion of the conductive layer 52a that is not covered by the resist pattern 53 is removed by wet etching. Next, as shown in FIG. 7D, the resist pattern 53 is removed. As a result, the pattern substrate 50 on which the conductive pattern 52 having the pattern corresponding to the first metal layer 32 is formed can be obtained.

(First film formation process)
Next, the first film forming step of forming the above-mentioned first metal layer 32 by the plating process using the pattern substrate 50 will be described. First, as shown in FIG. 7D, a pattern substrate 50 having a base material 51 on which a predetermined conductive pattern 52 is formed is prepared. The conductive pattern 52 has a pattern corresponding to the first metal layer 32.

Next, a first plating treatment step is carried out in which the first plating solution is supplied onto the base material 51 on which the conductive pattern 52 is formed, and the first metal layer 32 is deposited on the conductive pattern 52. For example, the base material 51 on which the conductive pattern 52 is formed is immersed in a plating tank filled with the first plating solution. As a result, as shown in FIG. 8A, the first metal layer 32 in which the first opening 30 is provided in a predetermined pattern can be obtained on the base material 51. The thickness of the central portion 42 of the first metal layer 32 is, for example, 5 μm or less.

Due to the characteristics of the plating process, as shown in FIG. 8A, the first metal layer 32 is not only a portion that overlaps with the conductive pattern 52 when viewed along the normal direction of the base material 51, but also a conductive pattern. It can also be formed in a portion that does not overlap with 52. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 that is deposited on the portion overlapping the end surface 54 of the conductive pattern 52. Therefore, the first metal layer 32 is not only precipitated and grown from the conductive pattern 52 in the normal direction of the base material 51, but is also orthogonal to the normal direction of the base material 51 from the end face 54 of the conductive pattern 52. It is also deposited in the direction and grows. As a result, as shown in FIG. 8A, the second point 45b of the tip portion 43 of the first metal layer 32 is located at a portion that does not overlap with the conductive pattern 52 when viewed along the normal direction of the base material 51. Can come to do.

In this way, the first metal layer 32 having the tip portion 43 as shown in FIGS. 5A and 5B is obtained. Here, the shape of the tip portion 43 is obtained as a result of precipitation of the metal material according to the shape of the conductive pattern 52. That is, in the vicinity of the upper end (upper corner portion) of the end surface 54 of the conductive pattern 52, the metal material precipitates in a curved shape and grows. At this time, the plating current is concentrated on the end face 54 of the conductive pattern 52. Therefore, at the tip portion 43, plating growth tends to be faster than at other portions. Here, by appropriately controlling conditions such as the amount of plating current, the tip portion 43 can be made thicker than the central portion 42. Further, the tip portion 43 may be formed so as to have a first hole demarcation line 46 as shown in FIGS. 5A and 5B. Further, in the vicinity of the lower end (lower corner portion) of the end face 54, the presence of the base material 51 makes it difficult for the plating solution to stir and flow. As a result, it is difficult for the plating solution to enter the vicinity of the lower end (lower corner portion) of the end surface 54. Therefore, the deposition rate of the metal material is reduced, the third point 45c is positioned outside the through hole 25 with respect to the second point 45b, and has the second hole demarcation line 47 as shown in FIGS. 5A and 5B. The tip portion 43 is formed as described above.

As long as the first metal layer 32 can be deposited on the conductive pattern 52, the specific method of the first plating treatment step is not particularly limited. For example, the first plating treatment step may be carried out as a so-called electroplating treatment step in which the first metal layer 32 is deposited on the conductive pattern 52 by passing an electric current through the conductive pattern 52. In this case, the catalyst layer may be provided on the conductive pattern 52.

The components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. The plating solution may contain various additives. As the additive, a pH buffer such as boric acid, a primary brightener such as saccharin natriu, a secondary brightener such as butinediol, propagyl alcohol, coumarin, formalin, and thiourea, and an antioxidant may be used. ..

(Second film formation process)
Next, a second film forming step is carried out in which a second metal layer 37 provided with a second opening 35 communicating with the first opening 30 is formed on the first metal layer 32 by a plating process. First, a resist forming step of forming a resist pattern 55 with a predetermined gap 56 is carried out on the base material 51 and on the tip portion 43 of the first metal layer 32. FIG. 8B is a cross-sectional view showing a resist pattern 55 formed on the base material 51. As shown in FIG. 8B, in the resist forming step, the first opening 30 of the first metal layer 32 is covered with the resist pattern 55, and the gap 56 of the resist pattern 55 is placed on the central portion 42 of the first metal layer 32. Implemented to be located.

Hereinafter, an example of the resist forming step will be described. First, a negative type resist film is formed by laminating a dry film on the base material 51 and on the tip portion 43 of the first metal layer 32. Examples of the dry film include those containing an acrylic photocurable resin such as RY3310 manufactured by Hitachi Chemical Co., Ltd. Further, the resist film may be formed by applying the material for the resist pattern 55 on the base material 51 and then performing firing as necessary. Next, an exposure mask that does not allow light to pass through the region of the resist film that should be the gap 56 is prepared, and the exposure mask is placed on the resist film. After that, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. A positive type resist film may be used as the resist film. In this case, as the exposure mask, an exposure mask that allows light to pass through the region of the resist film to be removed is used.

After that, the resist film is exposed through the exposure mask. Further, the resist film is developed to form an image on the exposed resist film. As described above, as shown in FIG. 8B, a gap 56 located on the central portion 42 of the first metal layer 32 is provided, and a resist pattern 55 covering the first opening 30 of the first metal layer 32 is formed. can do. In order to bring the resist pattern 55 into close contact with the base material 51 and the first metal layer 32 more firmly, a heat treatment step of heating the resist pattern 55 may be performed after the developing step.

Next, a second plating treatment step is carried out in which the second plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the second metal layer 37 on the central portion 42 of the first metal layer 32. For example, the base material 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with a second plating solution. As a result, as shown in FIG. 8C, the second metal layer 37 can be formed on the central portion 42 of the first metal layer 32. The thickness of the second metal layer 37 is set so that the thickness of the entire vapor deposition mask 20 is in the range of 3 to 50 μm. For example, the thickness of the second metal layer 37 is in the range of 1 to 50 μm, more preferably 2 to 40 μm, further preferably 2 to 30 μm, still more preferably 2 to 20 μm.

As long as the second metal layer 37 can be deposited on the central portion 42 of the first metal layer 32, the specific method of the second plating treatment step is not particularly limited. For example, the second plating treatment step may be carried out as a so-called electroplating treatment step in which the second metal layer 37 is deposited on the first metal layer 32 by passing an electric current through the first metal layer 32. Alternatively, the second plating treatment step may be an electroless plating treatment step. When the second plating process is an electroless plating process, an appropriate catalyst layer may be provided on the first metal layer 32. Even when the electrolytic plating treatment step is carried out, the catalyst layer may be provided on the first metal layer 32.

The components of the second plating solution used are appropriately determined according to the characteristics required for the second metal layer 37, as in the case of the first plating solution. For example, when the second metal layer 37 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the second plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. The plating solution may contain various additives. As the additive, a pH buffer such as boric acid, a primary brightener such as saccharin natriu, a secondary brightener such as butinediol, propagyl alcohol, coumarin, formalin, and thiourea, and an antioxidant may be used. ..

Note that FIG. 8C shows an example in which the second plating treatment step is continued until the upper surface of the resist pattern 55 and the upper surface of the second metal layer 37 coincide with each other, but the present invention is not limited to this. .. The second plating process may be stopped while the upper surface of the second metal layer 37 is located below the upper surface of the resist pattern 55.

After that, a removing step of removing the resist pattern 55 is performed. For example, by using an alkaline stripping solution, the resist pattern 55 can be stripped from the base material 51, the first metal layer 32, and the second metal layer 37.

(Separation process)
Next, a separation step of separating the combination of the first metal layer 32 and the second metal layer 37 from the pattern substrate 50 having the base material 51 is carried out. As a result, the first metal layer 32 provided with the first opening 30 in a predetermined pattern and the second metal layer 37 provided with the second opening 35 communicating with the first opening 30 are provided. A vapor deposition mask 20 can be obtained.

Next, a method of bringing the vapor deposition mask 20 shown in FIG. 4 into close contact with the organic EL substrate 92 shown in FIG. 2A will be described with reference to FIGS. 9A to 9C.

(Position adjustment process)
In the position adjusting step, as shown in FIG. 9A, in order to prevent the vapor deposition mask 20 from coming into contact with the organic EL substrate 92 and damaging the surface of the organic EL substrate 92, the organic EL substrate 92 and the vapor deposition mask 20 The position of the vapor deposition mask 20 is adjusted by moving the vapor deposition mask 20 along the surface direction of the organic EL substrate 92 with a predetermined distance from the first surface 20a.

(Adhesion process)
After the position adjustment step, as shown in FIG. 9B, a close contact step of bringing the vapor deposition mask 20 into close contact with the organic EL substrate 92 is performed. For example, the magnetic force from a magnet (not shown) is used to bring the vapor deposition mask 20 closer to the organic EL substrate 92, and bring the first surface 20a of the vapor deposition mask 20 into contact with the organic EL substrate 92. After that, a vapor deposition step of depositing an organic material or the like on the organic EL substrate 92 is performed. When a force such as a magnetic force from the magnet acts on the vapor deposition mask 20, as shown in FIG. 9C, a recessed portion 44 of the first metal layer 32 is formed and a portion that does not overlap with the second metal layer 37 is formed. It is conceivable that a part of the recessed surface 44a of the recessed portion 44 is deformed and comes into contact with the organic EL substrate 92.

The advantages of manufacturing the vapor deposition mask 20 as described above will be described below.

In the present embodiment, a curved first hole demarcation line 46 extending inward of the through hole 25 extends from the first point 45a to the second point 45b. This makes it possible to prevent the thin-film deposition material 98 from adhering to and accumulating on the first hole demarcation line 46 when the thin-film deposition material 98 is vapor-deposited. Therefore, it is possible to suppress the generation of the vapor deposition shadow and improve the vapor deposition quality. Further, the shape of the tip portion 43 according to the present embodiment, which is curved without corners and can effectively secure the thickness, is such that a part of the tip portion 43 (particularly, the recessed portion 44 is formed) in the ultrasonic mask cleaning. If this is the case, it is possible to prevent the recessed portion 44 from the tip end side) from being deformed or chipped.

Further, in the present embodiment, since the tip portion 43 includes the first hole demarcation line 46 as described above, the thickness of the portion of the tip portion 43 on the side of the through hole 25 can be secured. , The strength of the tip portion 43 can be increased. Further, the thickness of the tip portion 43 at the first point 45a is thicker than the thickness of the central portion 42. This also makes it possible to increase the strength of the vapor deposition mask 20.

Here, during the vapor deposition step, the vapor deposition material 98 (see FIG. 2A) flies from the second surface 20b side of the vapor deposition mask 20 and sequentially opens the second opening 35 and the first opening 30 of the through hole 25. pass. Therefore, the vapor deposition material 98 may adhere to and deposit on the second metal surface 32b of the tip portion 43. When the vapor deposition material 98 adheres in this way and the vapor deposition material 98 is vapor-deposited on another organic EL substrate 92 using the deposited vapor deposition mask 20, the deposited vapor deposition material 98 becomes a thin-film deposition shadow and is vapor-deposited. The utilization efficiency of the material 98 may decrease. Therefore, in order to remove the deposited vapor deposition material 98, it is preferable to clean the vapor deposition mask 20 (more specifically, ultrasonic cleaning). However, during this cleaning, if the strength of the tip 43 is low, the tip 43 of the vapor deposition mask 20 may be deformed or chipped.

On the other hand, according to the present embodiment, as described above, the tip portion 43 includes the first hole demarcation line 46, and the thickness of the tip portion 43 at the first point 45a is the thickness of the central portion 42. It's getting thicker. As a result, the strength of the tip portion 43 can be increased. Therefore, when the vapor deposition mask 20 is ultrasonically cleaned, the tip portion 43 of the vapor deposition mask 20 (particularly, when the recessed portion 44 is formed, the portion on the tip side from the recessed portion 44) is deformed or defective. Can be suppressed. Similarly, when the vapor deposition mask 20 is attached to or detached from the organic EL substrate 92, it is possible to prevent the vapor deposition mask 20 from being deformed or chipped.

Further, by ensuring the thickness of the tip portion 43, it is possible to increase the attractive force acting on the tip portion 43 by the magnet when the vapor deposition material 98 is vapor-deposited. Therefore, the adhesion between the tip portion 43 and the organic EL substrate 92 can be improved, and the shape accuracy of the pixels formed by the vapor deposition material 98 can be improved. As a result, the vapor deposition quality can be improved.

Further, in the present embodiment, a curved second hole demarcation line 47 extending inward of the through hole 25 extends from the second point 45b to the first metal surface 32a of the tip portion 43. As a result, when the vapor deposition mask 20 is attached to or detached from the organic EL substrate 92 or when the vapor deposition mask 20 is ultrasonically cleaned, a part of the tip portion 43 (particularly, when the recessed portion 44 is formed, the recessed portion 44). It is possible to prevent the portion on the tip side from being deformed or missing.

Next, the advantage of bringing the vapor deposition mask 20 into close contact with the organic EL substrate 92 as described above will be described below.

In the position adjusting step, the smaller the distance between the organic EL substrate 92 and the first surface 20a of the vapor deposition mask 20, the more accurately the relative position of the vapor deposition mask 20 with respect to the organic EL substrate 92 can be detected. Therefore, the position of the vapor deposition mask 20 can be precisely adjusted. On the other hand, the smaller the distance between the organic EL substrate 92 and the first surface 20a of the vapor deposition mask 20, the more the vapor deposition mask 20 becomes an organic EL substrate due to an error in the position adjustment of the vapor deposition mask 20 and the deflection of the vapor deposition mask 20. It is more likely to come into contact with 92.

Here, according to the present embodiment, the recessed portion 44 is formed on the first surface 20a of the vapor deposition mask 20. The recessed surface 44a of the recessed portion 44 is located at a position farther from the organic EL substrate 92 than the outermost surface 32c. Therefore, the possibility that the recessed surface 44a comes into contact with the organic EL substrate 92 is lower than the possibility that the outermost surface 32c comes into contact with the organic EL substrate 92. Therefore, by forming the recessed portion 44 on the first metal surface 32a, even if an error in adjusting the position of the vapor deposition mask 20 or the deflection of the vapor deposition mask 20 occurs, the vapor deposition mask 20 comes into contact with the organic EL substrate 92. Area can be reduced. This makes it possible to prevent the surface of the organic EL substrate 92 from being damaged. For example, it is possible to prevent the wiring and electrodes formed in advance on the organic EL substrate 92 from being damaged.

By the way, during the thin-film deposition process, if there is a gap between the first metal surface 32a at the third point 45c where the first metal surface 32a and the second hole demarcation line 47 intersect and the organic EL substrate 92, The thin-film deposition material 98 enters the gap, and the shape of the thin-film deposition material 98 adhering to the organic EL substrate 92 varies. Therefore, in order to precisely control the shape of the vapor deposition material 98 adhering to the organic EL substrate 92, it is important to ensure that the third point 45c of the first metal layer 32 of the vapor deposition mask 20 is in contact with the organic EL substrate 92. become. The gap is likely to occur when the thickness of the vapor deposition mask 20 is small, and therefore the vapor deposition mask 20 has a deflection or a wavy shape.

Here, according to the present embodiment, since the recessed portion 44 is formed on the first metal surface 32a, when the vapor deposition mask 20 is brought closer to the organic EL substrate 92 during the adhesion step, the outermost surface 32c of the vapor deposition mask 20 is formed. Is more likely to come into contact with the organic EL substrate 92 than the recessed surface 44a. The third point 45c (the outer edge of the vapor deposition mask 20 on the first metal surface 32a) of the first metal layer 32 of the vapor deposition mask 20 is located on the outermost surface 32c. Therefore, the third point 45c of the first metal layer 32 of the vapor deposition mask 20 can be more reliably brought into contact with the organic EL substrate 92.

By the way, the portion of the first metal layer 32 that does not overlap with the second metal layer 37 when viewed along the normal direction of the vapor deposition mask 20 overlaps with the second metal layer 37 of the first metal layer 32. It is easier to deform than the part. Further, when the recessed portion 44 is formed in the first metal layer 32 of the vapor deposition mask 20, the thickness of the first metal layer 32 is reduced by the depth D of the recessed portion 44, and as a result, the first metal layer 32 is more easily deformed. Therefore, when a force such as a magnetic force from the magnet acts on the vapor deposition mask 20, as shown in FIG. 9C, a recessed portion 44 of the first metal layer 32 is formed and a portion that does not overlap with the second metal layer 37. Is deformed and a part of the recessed surface 44a of the recessed portion 44 may come into contact with the organic EL substrate 92. By contacting a part of the recessed surface 44a of the recessed portion 44 with the organic EL substrate 92 in addition to the outermost surface 32c of the vapor deposition mask 20, the vapor deposition mask 20 can be more firmly adhered to the organic EL substrate 92.

Preferably, during the adhesion step, the outermost surface 32c of the vapor deposition mask 20 first contacts the organic EL substrate 92, and then the recessed surface 44a of the recessed portion 44 of the vapor deposition mask 20 contacts the organic EL substrate 92. Bring the mask 20 closer to the organic EL substrate 92. As a result, the third point 45c of the outermost surface 32c of the vapor deposition mask 20 can be reliably brought into contact with the organic EL substrate 92, and the vapor deposition mask 20 can be firmly adhered to the organic EL substrate 92.

Further, according to the present embodiment, the thickness of the tip portion 43 can be secured, and the recessed portion 44 is formed on the first metal surface 32a, so that the tip portion is formed by a magnet when the vapor deposition material 98 is vapor-deposited. The adsorption force acting on the 43 can be increased, and the thin-film deposition mask 20 can be firmly adhered to the organic EL substrate 92. Therefore, the adhesion between the tip portion 43 and the organic EL substrate 92 can be further improved, and the shape accuracy of the pixels formed by the vapor deposition material 98 can be further improved.

Although the embodiments of the present invention have been described in detail above, the vapor deposition mask, the vapor deposition mask manufacturing method, and the organic semiconductor device manufacturing method according to the present invention are not limited to the above embodiments, and the present invention is not limited to the above embodiments. Various changes can be made without departing from the spirit.

In the present embodiment described above, the tip portion 43 may not include the first hole demarcation line 46. Also in this case, since the thickness of the tip portion 43 at the first point 45a is thicker than the thickness of the central portion 42, deformation and chipping of the tip portion 43 of the vapor deposition mask 20 are suppressed, and the vapor deposition quality is improved. Can be planned.

Further, in the above-described embodiment, the second hole demarcation line 47 may not be formed in a curved shape that is convex toward the inside of the through hole 25. Also in this case, the tip portion 43 includes the first hole demarcation line 46, and the thickness of the tip portion 43 at the first point 45a is thicker than the thickness of the central portion 42, so that the tip portion of the vapor deposition mask 20 is formed. It is possible to suppress deformation and chipping of 43 and improve the vapor deposition quality.

Further, in the above-described embodiment, the thickness of the tip portion 43 at the first point 45a may be the same as the thickness of the central portion 42. Even in this case, by including the first hole demarcation line 46 and the second hole demarcation line 47, the tip portion 43 suppresses deformation and chipping of the tip portion 43 of the vapor deposition mask 20, and improves the vapor deposition quality. Can be done.

(Modification example of layer structure of thin-film mask)
Further, in the above-described embodiment, the vapor deposition mask 20 includes a first metal layer 32 and a second metal layer 37 provided on the first metal layer 32, and is formed in a two-layer structure. I explained the example. However, the present invention is not limited to this, and the second metal layer 37 may not be formed on the first metal layer 32, but may be formed in a one-layer structure as shown in FIG. 10, for example. Also in this case, the same effect as that of the two-layer structure vapor deposition mask 20 according to the above-described embodiment can be obtained. Here, in the form shown in FIG. 10, the central portion 42 can be the central portion when the first metal layer 32 is divided into three equal parts in the width direction. In this case, the width of each tip 43 and the width of the center 42 are equal when viewed in a cross section along the normal direction N. In the embodiment shown in FIG. 10, the thickness t1 of the tip portion 43 at the first point 45a is thicker than the thickness t2 of the central portion 42, as in the case of the present embodiment described above. The thickness of the tip portion 43 is maximum at the first point 45a. Further, the thickness t2 is the first metal layer 32 at the five points P1, P2, P3, P4, and P5 arranged at equal intervals in the width direction on the second metal surface 32b, as in the present embodiment described above. (Height from the first metal surface 32a to the second metal surface 32b of the central portion 42) can be an average value. Further, the effect of reducing the area of the vapor deposition mask 20 in contact with the organic EL substrate 92 by forming the recessed portion 44 on the first metal surface 32a can be realized regardless of the layer structure of the vapor deposition mask 20. As shown in FIG. 10, the vapor deposition mask 20 is composed of only one metal layer (plating layer), and a recess 44 is formed on the surface of the metal layer forming the first surface 20a of the vapor deposition mask 20. May be good.

(Modified example of arrangement of through holes)
Further, in the above-described embodiment, an example is shown in which a plurality of through holes 25 are arranged in a grid pattern when the vapor deposition mask 20 is viewed along the normal direction of the vapor deposition mask 20. However, the arrangement of the through holes 25 is not particularly limited. For example, as shown in FIG. 11, when the vapor deposition mask 20 is viewed along the normal direction of the vapor deposition mask 20, a plurality of through holes 25 may be arranged in a staggered pattern.

(Example of deformation of the shape of the recess)
Further, the recessed portion 44 of the first metal surface 32a is formed corresponding to the shape of the conductive pattern 52 of the pattern substrate 50 as described above. Therefore, the shape of the recessed portion 44 is determined based on the shape of the conductive pattern 52. Hereinafter, some examples of the shape of the recessed portion 44 will be described.

FIG. 12 is an enlarged cross-sectional view showing an example of the conductive pattern 52 of the pattern substrate 50 obtained when the conductive layer 52a is patterned by wet etching. Further, FIG. 13 is an enlarged cross-sectional view showing the vapor deposition mask 20 obtained when the first film forming step is carried out using the pattern substrate 50 shown in FIG.

When isotropically progressing etching such as wet etching is adopted, a recess may be formed in the end surface 54 of the conductive pattern 52 as shown in FIG. In this case, as shown in FIG. 13, the side surface 44b of the recessed portion 44 of the first metal layer 32 of the vapor deposition mask 20 projects toward the recessed portion 44. As a result, it is considered that the deformation of the portion of the first metal layer 32 in which the recessed portion 44 is formed is suppressed in the normal direction of the vapor deposition mask 20. Therefore, it is more reliably suppressed that the recessed surface 44a of the first metal surface 32a comes into contact with the organic EL substrate 92 during the position adjusting step of adjusting the position of the vapor deposition mask 20 in the surface direction of the organic EL substrate 92. can do. Further, the third point 45c of the outermost surface 32c of the vapor deposition mask 20 can be more reliably brought into contact with the organic EL substrate 92.

FIG. 14 is an enlarged cross-sectional view showing another example of the conductive pattern 52 of the pattern substrate 50 obtained when the conductive layer 52a is patterned by wet etching. Further, FIG. 15 is an enlarged cross-sectional view showing a vapor deposition mask 20 obtained when the first film forming step is carried out using the pattern substrate 50 shown in FIG. In the conductive pattern 52 shown in FIG. 14, the portion of the end face 54 in contact with the base material 51 is on the outer side of the end face 54 on the side in contact with the resist pattern 53 (the side away from the center of the conductive pattern 52). To position. In other words, the skirt portion of the conductive pattern 52 extends outward. The conductive pattern 52 shown in FIG. 14 is obtained when the time for wet etching the conductive layer 52a is shorter than that in the form shown in FIG. For example, by setting the time for wet etching the conductive layer 52a to the time calculated by dividing the thickness of the conductive layer 52a by the etching rate of the conductive layer 52a, that is, the so-called just etching time, the conductivity shown in FIG. Pattern 52 is obtained.

The position of the skirt portion of the conductive pattern 52 shown in FIG. 14 changes sensitively depending on the time of wet etching. Further, as shown in FIG. 15, when the position of the skirt portion of the conductive pattern 52 shifts outward, the position of the third point 45c of the first metal layer 32 of the vapor deposition mask 20 also shifts outward by that amount. Therefore, in order to stably determine the position of the third point 45c of the first metal layer 32 of the vapor deposition mask 20, it is preferable to make the wet etching time longer than the just etching time as shown in FIG.

On the other hand, in order to facilitate the separation step of separating the vapor deposition mask 20 composed of the first metal layer 32 and the second metal layer 37 formed on the pattern substrate 50 from the pattern substrate 50, as shown in FIG. It is preferable that the conductive pattern 52 has a skirt portion extending outward.

(Example of performing mold release processing)
In order to facilitate the separation step of separating the vapor deposition mask 20 from the pattern substrate 50, the pattern substrate 50 may be subjected to a mold release treatment before the first film formation step is performed. An example of the mold release process will be described below.

First, a degreasing treatment for removing oil on the surface of the pattern substrate 50 is performed. For example, an acidic degreasing solution is used to remove oil on the surface of the conductive pattern 52 of the pattern substrate 50.

Next, an activation treatment for activating the surface of the conductive pattern 52 is performed. For example, the same acidic solution as the acidic solution contained in the plating solution used in the subsequent plating treatment is brought into contact with the surface of the conductive pattern 52. For example, when the plating solution contains nickel sulfamate, sulfamic acid is brought into contact with the surface of the conductive pattern 52.

Next, an organic film forming process for forming an organic film on the surface of the conductive pattern 52 is performed. For example, a mold release agent containing an organic substance is brought into contact with the surface of the conductive pattern 52. At this time, the thickness of the organic film is set so that the electric resistance of the organic film is thin so that the precipitation of the first metal layer 32 by electrolytic plating is not hindered by the organic film.

After the degreasing treatment, the activation treatment, and the organic film forming treatment, a water washing treatment for washing the pattern substrate 50 with water is performed, respectively.

According to this modification, the separation step of separating the vapor deposition mask 20 from the pattern substrate 50 can be facilitated by performing a mold release treatment on the pattern substrate 50 before performing the first film forming step.

Although some modifications to the above-described embodiments have been described, it is naturally possible to apply a plurality of modifications in combination as appropriate.

20 Thin-film mask 25 Through hole 32 1st metal layer 32a 1st metal surface 37 2nd metal layer 42 Central part 43 Tip part 44 Depressed part 44e Outer edge 45a 1st point 45b 2nd point 45c 3rd point 46 1st hole demarcation line 47 2nd hole demarcation line 51 Base material 52 Conductive pattern 92 Organic EL substrate 98 Deposited material 100 Organic EL display device N Normal direction R Radius of curvature t1 Tip thickness t2 Central thickness w Width θ2 Angle

Claims (15)

A thin-film mask that deposits a vapor-deposited material on a substrate to be deposited.
The first metal layer and
A through hole provided in the first metal layer through which the thin-film deposition material passes when the thin-film deposition material is vapor-deposited on the substrate to be vapor-deposited.
Comprising a second metal layer before SL through hole is provided, and
The first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, the central portion and the tip portion, and the vapor-deposited material is vapor-deposited on the substrate to be vapor-deposited. It has a first metal surface that faces the substrate to be vapor-deposited.
The tip includes the first point farthest from the first metal surface when viewed in cross section along the normal direction of the vapor deposition mask.
The thickness of the tip portion at the first point is thicker than the thickness of the central portion.
The second metal layer is provided on the side of the first metal layer opposite to the side of the first metal surface.
A recess is formed on the first metal surface.
When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the contour of the connecting portion connecting the first metal layer and the second metal layer is formed on the first metal surface. A vapor deposition mask characterized by surrounding the outer edge of the recessed portion. The tip portion has a second point located most inside the through hole, and a curved first hole demarcation line extending from the first point to the second point and projecting toward the inside of the through hole. The vapor deposition mask according to claim 1, further comprising. The position of the second point when viewed in the normal direction is on the side of the first point from the first metal surface.
The tip portion has a curved shape that extends from the second point to the first metal surface of the tip portion and becomes convex toward the inside of the through hole when viewed in a cross section along the normal direction. The vapor deposition mask according to claim 2, further comprising a second hole demarcation line. A thin-film mask that deposits a vapor-deposited material on a substrate to be vapor-deposited.
The first metal layer and
A through hole provided in the first metal layer through which the thin-film deposition material passes when the thin-film deposition material is vapor-deposited on the substrate to be deposited.
Comprising a second metal layer before SL through hole is provided, and
The first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, the central portion and the tip portion, and the vapor-deposited material is vapor-deposited on the substrate to be vapor-deposited. It has a first metal surface that faces the substrate to be vapor-deposited.
The tip is located at the first point farthest from the first metal surface and the innermost side of the through hole when viewed in a cross section along the normal direction of the vapor deposition mask, and is in the normal direction. The second point on the side of the first point from the first metal surface, and the curvature extending from the first point to the second point and becoming convex toward the inside of the through hole. Includes a shaped first hole demarcation line and a curved second hole demarcation line extending from the second point to the first metal surface of the tip portion and projecting toward the inside of the through hole.
The second metal layer is provided on the side of the first metal layer opposite to the side of the first metal surface.
A recess is formed on the first metal surface.
When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the contour of the connecting portion connecting the first metal layer and the second metal layer is formed on the first metal surface. A vapor deposition mask characterized by surrounding the outer edge of the recessed portion. When viewed in a cross section along the normal direction, with respect to the normal direction of the line passing through the second point and the third point where the first metal surface and the second hole demarcation line intersect. The vapor deposition mask according to claim 3 or 4, wherein the angle formed is greater than 0 ° and not more than 45 °. The vapor deposition mask according to any one of claims 2 to 5, wherein the radius of curvature of the first hole demarcation line is 0.5 to 5 μm. The vapor deposition according to any one of claims 1 to 6, wherein the width of the portion of the first metal surface where the recessed portion is not formed is within the range of 0.5 to 5 μm. mask. The vapor deposition mask according to any one of claims 1 to 7, wherein the second metal layer is a plating layer. The vapor deposition mask according to any one of claims 1 to 8, wherein the first metal layer is a plating layer. The vapor deposition mask according to any one of claims 1 to 9, wherein the thickness of the central portion is 5 μm or less. A thin-film mask manufacturing method for manufacturing a thin-film mask having through holes through which the thin-film material passes when the thin-film material is vapor-deposited on a substrate to be vapor-deposited.
The process of preparing a base material on which a predetermined conductive pattern is formed, and
A step of forming a first metal layer provided with the through holes by plating on the conductive pattern, and
A step of forming a second metal layer provided with the through holes by plating on the first metal layer, and a step of forming the second metal layer.
A step of separating the base material from the first metal layer is provided.
The first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, the central portion and the tip portion, and a first metal surface facing the vapor-deposited substrate. And have
The tip includes the first point farthest from the first metal surface when viewed in cross section along the normal direction of the vapor deposition mask.
The thickness of the tip portion at the first point is thicker than the thickness of the central portion.
In the step of separating the base material, a recess having a shape corresponding to the conductive pattern is formed in the base material and the first metal layer separated from the conductive pattern.
When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the contour of the connecting portion connecting the first metal layer and the second metal layer is formed on the first metal surface. A method for producing a thin-film mask, which comprises surrounding the outer edge of the recessed portion. The tip portion has a second point located most inside the through hole, and a curved first hole demarcation line extending from the first point to the second point and projecting toward the inside of the through hole. The vapor deposition mask manufacturing method according to claim 11, further comprising. A thin-film mask manufacturing method for manufacturing a thin-film mask having through holes through which the thin-film material passes when the thin-film material is vapor-deposited on a substrate to be deposited.
The process of preparing a base material on which a predetermined conductive pattern is formed, and
A step of forming a first metal layer provided with the through holes by plating on the conductive pattern, and
A step of forming a second metal layer provided with the through holes by plating on the first metal layer, and a step of forming the second metal layer.
A step of separating the base material from the first metal layer is provided.
The first metal layer is provided at a central portion, a tip portion provided on the side of the through hole from the central portion, and at the central portion and the tip portion, and is a first metal surface facing the substrate to be vapor-deposited. And have
The tip is located at the first point farthest from the first metal surface and the innermost side of the through hole when viewed in a cross section along the normal direction of the vapor deposition mask, and is in the normal direction. The second point on the side of the first point from the first metal surface, and the curvature extending from the first point to the second point and becoming convex toward the inside of the through hole. Includes a shaped first hole demarcation line and a curved second hole demarcation line extending from the second point to the first metal surface of the tip portion and projecting toward the inside of the through hole.
In the step of separating the base material, a recess having a shape corresponding to the conductive pattern is formed in the base material and the first metal layer separated from the conductive pattern.
When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the contour of the connecting portion connecting the first metal layer and the second metal layer is formed on the first metal surface. A method for producing a thin-film mask, which comprises surrounding the outer edge of the recessed portion. The vapor deposition mask manufacturing method according to any one of claims 11 to 13, wherein the thickness of the central portion is 5 μm or less. It is a method for manufacturing organic semiconductor devices.
The step of preparing the vapor deposition mask according to any one of claims 1 to 10 and
A method for manufacturing an organic semiconductor device, which comprises a step of depositing the vapor-deposited material in a pattern on the substrate to be vapor-deposited using the thin-film mask.

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