JP2016148113A - Method of manufacturing vapor deposition mask, and vapor deposition mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a vapor deposition mask having a through hole formed in a complicated shape by utilizing plating processing.SOLUTION: A second film forming process of forming a first metal layer on a second metal layer includes: a process of providing a resist film including photosetting resin on a substrate and the first layer formed on the substrate; an exposing process of exposing the resist film by irradiating the resist film with light made incident on the substrate from the opposite side from the side of the substrate where the resist film is provided; a developing process of forming a resist pattern formed on the first metal layer and having a gap by developing the resist film; and a plating processing process of depositing the second metal layer on the first metal layer by supplying a plating liquid to the gap of the resist pattern.SELECTED DRAWING: Figure 9

Description

  The present invention relates to a vapor deposition mask having a plurality of through holes and a method for manufacturing the vapor deposition mask using a plating process.

  In recent years, a display device used in a portable device such as a smartphone or a tablet PC is required to have high definition, for example, a pixel density of 400 ppi or more. In portable devices, there is an increasing demand for compatibility with ultra full high vision, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

  Organic EL display devices have attracted attention because of their good responsiveness, low power consumption and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels with a desired pattern using a vapor deposition mask including through holes arranged in a desired pattern is known. Specifically, first, a vapor deposition mask is brought into close contact with the substrate for the organic EL display device, and then, the vapor deposition mask and the substrate that are brought into close contact with each other are put into the vapor deposition device to perform vapor deposition of an organic material or the like. In this case, in order to precisely manufacture an organic EL display device having a high pixel density, the position and shape of the through hole of the vapor deposition mask should be accurately reproduced according to the design, and the thickness of the vapor deposition mask should be reduced. Is required.

  As a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate. Next, a region of the first surface of the metal plate that is not covered with the first resist pattern is etched to form a first recess in the first surface of the metal plate. Then, the area | region which is not covered with the 2nd resist pattern among the 2nd surfaces of a metal plate is etched, and a 2nd recessed part is formed in the 2nd surface of a metal plate. At this time, by performing etching so that the first recess and the second recess communicate with each other, a through-hole penetrating the metal plate can be formed. In addition, the 1st surface of a metal plate is a surface which comprises the 1st surface of the vapor deposition mask facing the board | substrate (henceforth an organic EL board | substrate) for organic EL display apparatuses. Moreover, the 2nd surface of a metal plate is a surface which comprises the 2nd surface of the vapor deposition mask located in the vapor deposition source side, such as a crucible holding vapor deposition material.

  By the way, in the etching process, the erosion of the metal plate does not proceed only in the normal direction of the metal plate, but also proceeds in the direction along the plate surface of the metal plate. That is, even in the portion of the metal plate that is covered with the resist pattern, the metal plate is at least partially eroded. Therefore, in the method using etching, the through hole cannot be formed in the metal plate as in the resist pattern, and therefore it is difficult to accurately reproduce the shape of the through hole of the vapor deposition mask according to the design. is there. In addition, when the through hole has a complicated shape, such as when the dimension of the through hole is different between the first surface side and the second surface side of the metal surface, The reproducibility is further reduced.

  Also, when manufacturing an evaporation mask using etching, the degree of erosion of the metal plate in the direction along the plate surface of the metal plate changes according to the length of time until the etching in the normal direction of the metal plate is completed. To do. That is, the shape of the through hole varies depending on the thickness of the metal plate. For this reason, it is not easy to accurately reproduce both the thickness of the metal plate, that is, the thickness of the vapor deposition mask and the shape of the through hole.

  As a method for manufacturing a vapor deposition mask, in addition to the above-described method using etching, for example, as disclosed in Patent Document 2, a method for manufacturing a vapor deposition mask using a plating process is known. For example, in the method described in Patent Document 2, first, a base plate having conductivity is prepared. Next, a resist pattern is formed on the base plate with a predetermined gap. This resist pattern is provided at a position where a through hole of the vapor deposition mask is to be formed. Thereafter, a plating solution is supplied to the gaps between the resist patterns, and a metal layer is deposited on the base plate by electrolytic plating. Thereafter, by separating the metal layer from the base plate, a vapor deposition mask in which a plurality of through holes are formed can be obtained.

  According to the method of manufacturing a vapor deposition mask using a plating process, a through hole can be formed in a metal plate according to a resist pattern. That is, the position and shape of the through hole of the vapor deposition mask can be accurately reproduced according to the design. Moreover, the thickness of a vapor deposition mask can be set independently of the position and shape of the through-hole of a vapor deposition mask by adjusting the time which continues a plating process.

Japanese Patent No. 5382259 JP 2001-234385 A

  In order to suppress the occurrence of shadows in the vapor deposition process and to precisely control the area, shape and thickness of the vapor deposition material adhering to the organic EL substrate, the shape and dimensions of the through holes of the vapor deposition mask are positioned. It may be necessary to change accordingly. For example, Patent Document 1 described above shows an example in which the opening size of the through hole on the first surface side of the vapor deposition mask is smaller than the opening size of the through hole on the second surface side. However, according to the method described in Patent Document 2, it is not possible to manufacture a vapor deposition mask in which a through hole having such a complicated shape is formed.

  The present invention has been made in view of such problems, and an object of the present invention is to provide a method of manufacturing a vapor deposition mask in which a through hole having a complicated shape is formed using a plating process. .

  1st this invention is a vapor deposition mask manufacturing method which manufactures the vapor deposition mask in which the several through-hole was formed, Comprising: The 1st metal by which the 1st opening part was provided in the predetermined pattern on the board | substrate which has insulation A first film forming step of forming a layer; a second film forming step of forming a second metal layer provided with a second opening communicating with the first opening on the first metal layer; A separation step of separating a combination of one metal layer and the second metal layer from the substrate, and the second film formation step includes applying a photocurable resin on the substrate and the first metal layer. And a step of exposing the resist film by irradiating the resist film with light incident on the substrate from a side opposite to the side of the substrate on which the resist film is provided. And developing the resist film on the first metal layer A vapor deposition mask manufacturing method comprising: a development step of forming a resist pattern having a formed gap; and a plating step of depositing the second metal layer on the first metal layer in the gap of the resist pattern. is there.

  In the method of manufacturing a vapor deposition mask according to the first aspect of the present invention, a conductive pattern having a pattern corresponding to the first metal layer is formed on the substrate, and the first film forming step is performed on the substrate. In the method, a plating treatment step of depositing the first metal layer on the conductive pattern may be included.

  In the method of manufacturing a vapor deposition mask according to the first aspect of the present invention, the plating process step of the first film formation step deposits the first metal layer on the conductive pattern by passing an electric current through the conductive pattern. An electrolytic plating treatment step may be included.

  In the method of manufacturing a vapor deposition mask according to the first aspect of the present invention, the plating process step of the second film forming step is configured such that the second metal layer is formed on the first metal layer by passing a current through the first metal layer. An electrolytic plating treatment step for precipitation may be included.

  In the vapor deposition mask manufacturing method according to the first aspect of the present invention, the thickness of the portion of the first metal layer connected to the second metal layer may be 5 μm or less.

  In the vapor deposition mask manufacturing method according to the first aspect of the present invention, the thickness of the second metal layer is in the range of 3 to 50 μm, more preferably in the range of 3 to 30 μm, and still more preferably in the range of 3 to 25 μm. May be.

  In the vapor deposition mask manufacturing method according to the first aspect of the present invention, in the first film formation step, the first metal layer is formed on a first surface side of the vapor deposition mask, and in the second film formation step, Two metal layers are formed on the second surface side of the vapor deposition mask, the first opening of the first metal layer on the first surface and the second opening of the second metal layer on the second surface. Any of these may have a contour formed by joining a plurality of linear portions.

  The second aspect of the present invention is a vapor deposition mask in which a plurality of through holes from the first surface to the second surface are formed, and is located on the first surface side, and the first opening is provided in a predetermined pattern. A first metal layer, and a second metal layer provided on the second surface side and provided with a second opening communicating with the first opening, wherein the second metal layer is formed by the deposition. When the vapor deposition mask is viewed along the normal direction of the mask, the outline of the second opening is configured to surround the outline of the first opening, and the first opening on the first surface is configured. And the outline of the second opening on the second surface are formed by joining a plurality of linear portions, and the vapor deposition mask is viewed along the normal direction of the vapor deposition mask. A connecting portion that connects two adjacent linear portions of the first opening, and the first The shortest distance between two adjacent linear portions of the opening is connected to the intermediate point of the linear portion of the first opening and the intermediate of the linear portion of the second opening. It is a vapor deposition mask which is smaller than the distance between points.

  In the vapor deposition mask according to the second aspect of the present invention, the contour of the first opening on the first surface and the contour of the second opening on the second surface are combined with a plurality of linear portions. It may be a polygonal shape formed by making it.

  In the vapor deposition mask according to the second aspect of the present invention, the contour of the first opening on the first surface and the contour of the second opening on the second surface may include the curved linear portion. .

  3rd this invention is a vapor deposition mask manufacturing method which manufactures the vapor deposition mask in which the several through-hole was formed, Comprising: The process of preparing the board | substrate with which the predetermined light-shielding pattern which has light-shielding property was formed, A film forming step for forming a metal layer provided with the through-holes in a predetermined pattern; and a separation step for separating the metal layer from the substrate. A step of providing a resist film containing a photocurable resin on the surface on which the light-shielding pattern is formed, and the substrate from a side opposite to the side on which the resist film is provided. An exposure step of irradiating the resist film with light incident on the resist film to expose the resist film, and developing the resist film to form a resist pattern having a gap formed on the light-shielding pattern Process, In the gap of the serial resist pattern including a plating treatment step of precipitating the metal layer on the light-shielding pattern, a deposition mask manufacturing process.

  In the manufacturing method of the vapor deposition mask according to the third aspect of the present invention, the light shielding pattern formed on the substrate is a conductive pattern having a light shielding property and conductivity. An electroplating treatment step of depositing the metal layer on the conductive pattern by passing an electric current through the conductive pattern may be included.

  In the method of manufacturing a vapor deposition mask according to the third aspect of the present invention, a portion of the through hole located on the first surface of the vapor deposition mask is referred to as a first opening, and the second surface of the vapor deposition mask of the through hole. When the upper portion is referred to as a second opening, each of the first opening and the second opening of the metal layer has a contour formed by joining a plurality of linear portions. It may be.

  4th this invention is a vapor deposition mask in which the several through-hole from the 1st surface to the 2nd surface was formed, Comprising: The metal layer in which the said through-hole was formed in the predetermined pattern is provided, Of these, when the portion located on the first surface is referred to as a first opening and the portion of the through hole located on the second surface is referred to as a second opening, the through hole is formed on the vapor deposition mask. When the deposition mask is viewed along the normal direction, the contour of the second opening is configured to surround the contour of the first opening, and the contour of the first opening and the second opening are configured. Each of the outlines of the portions is formed by joining a plurality of linear portions, and when the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, 2 adjacent to the first opening portion. Two connecting portions to which the two linear portions are connected, and the adjacent two of the second openings The shortest distance between the connecting portion to which the linear portion is connected is a distance between an intermediate point of the linear portion of the first opening and an intermediate point of the linear portion of the second opening. It is a vapor deposition mask that is also smaller.

  In the vapor deposition mask according to the fourth aspect of the present invention, the outline of the first opening and the outline of the second opening are both polygonal shapes formed by joining a plurality of linear portions. It may be.

  In the vapor deposition mask according to the fourth aspect of the present invention, the contour of the first opening and the contour of the second opening may include the curved linear portion.

In the first aspect of the present invention, the vapor deposition mask includes a first metal layer provided with a first opening in a predetermined pattern, and a second metal layer provided with a second opening communicating with the first opening, It has.
For this reason, both the shape defined by the 1st opening part of a 1st metal layer and the shape defined by the 2nd opening part of a 2nd metal layer can be provided to the through-hole of a vapor deposition mask.
Therefore, a through hole having a complicated shape can be formed. In the first aspect of the present invention, the second film forming step of forming the second metal layer on the first metal layer includes a photocurable resin on the substrate and on the first metal layer formed on the substrate. A step of providing a resist film, an exposure step of irradiating the resist film with light incident on the substrate from the side opposite to the side on which the resist film is provided, and exposing the resist film; Development is performed to form a resist pattern having a gap formed on the first metal layer, and a plating solution is supplied to the gap between the resist patterns to deposit the second metal layer on the first metal layer. A plating treatment process. In this case, the first metal layer formed on the substrate functions as an exposure mask that partially blocks light applied to the resist film. For this reason, the gap of the resist pattern can be accurately formed on the first metal layer. Therefore, the second metal layer can be formed with high positional accuracy with respect to the first metal layer. This makes it possible to accurately form a through hole having a complicated shape.

In the second aspect of the present invention, the vapor deposition mask includes a first metal layer provided with a first opening in a predetermined pattern, a second metal layer provided with a second opening communicating with the first opening, It has.
For this reason, both the shape defined by the 1st opening part of a 1st metal layer and the shape defined by the 2nd opening part of a 2nd metal layer can be provided to the through-hole of a vapor deposition mask.
Therefore, a through hole having a complicated shape can be formed. In the second aspect of the present invention, the outline of the first opening and the outline of the second opening are both formed by combining a plurality of linear portions. In addition, the shortest distance between the connecting portion where two adjacent linear portions of the first opening are connected to the connecting portion where two adjacent linear portions of the second opening are connected is the first opening. It is smaller than the distance between the intermediate point of the linear part and the intermediate point of the linear part of the second opening. For this reason, compared with the case where the distance between the outline of the 1st opening part and the outline of the 2nd opening part is constant regardless of a position, it is in the joint part of a plurality of 2nd opening parts among the 2nd metal layers. The area of the contact portion can be increased. Therefore, the strength of the vapor deposition mask on the side where the second opening is provided can be increased.

  In the third aspect of the present invention, the film forming step of forming the metal layer provided with the through-holes in a predetermined pattern includes a resist film containing a photocurable resin on the substrate on which the predetermined light-shielding pattern is formed. A step of providing, an exposure step of exposing the resist film by irradiating the resist film with light incident on the substrate from a side opposite to the side of the substrate on which the resist film is provided, and a resist film Development process to form a resist pattern having a gap formed on the light-shielding pattern, and a plating process to deposit a metal layer on the light-shielding pattern by supplying a plating solution to the resist pattern gap And. In this case, the light-shielding pattern serving as a base when depositing the metal layer functions as an exposure mask that partially shields the light applied to the resist film. For this reason, the gap of the resist pattern can be accurately formed on the light shielding pattern. Therefore, it is possible to provide a vapor deposition mask having a through hole formed with high positional accuracy.

  In the fourth aspect of the present invention, the outline of the first opening of the through hole on the first surface side of the vapor deposition mask and the outline of the second opening of the through hole on the second surface side of the vapor deposition mask are both a plurality of lines. It is formed by joining the shaped parts. In addition, the shortest distance between the connecting portion where two adjacent linear portions of the first opening are connected to the connecting portion where two adjacent linear portions of the second opening are connected is the first opening. It is smaller than the distance between the intermediate point of the linear part and the intermediate point of the linear part of the second opening. For this reason, compared with the case where the distance between the outline of the 1st opening part and the outline of the 2nd opening part is constant regardless of a position, it is in the joint part of a plurality of 2nd opening parts among the 2nd metal layers. The area of the contact portion can be increased. Therefore, the strength of the vapor deposition mask on the second surface side can be increased.

FIG. 1 is a schematic plan view showing an example of a vapor deposition mask apparatus including a vapor deposition mask in the embodiment of the present invention. FIG. 2 is a view for explaining a method of vapor deposition using the vapor deposition mask apparatus shown in FIG. FIG. 3A is a partial plan view showing the vapor deposition mask shown in FIG. 1. FIG. 3B is an enlarged view showing the outlines of the first opening and the second opening shown in FIG. 3A. 4 is a cross-sectional view taken along line IV-IV in FIG. 3A. FIG. 5 is an enlarged cross-sectional view showing a part of the first metal layer and the second metal layer of the vapor deposition mask shown in FIG. 4. FIG. 6 is a cross-sectional view showing a substrate on which a conductive pattern is formed. FIG. 7A is a cross-sectional view showing a first plating process for depositing a first metal layer on a conductive pattern. FIG. 7B is a plan view showing the first metal layer of FIG. 7A. FIG. 8 is a cross-sectional view showing a step of providing a resist film on the substrate and the first metal layer. FIG. 9 is a cross-sectional view showing an exposure process for exposing a resist film. FIG. 10A is a cross-sectional view showing a resist pattern formed on a substrate and a first metal layer. FIG. 10B is a plan view showing the resist pattern of FIG. 10A. FIG. 11 is a cross-sectional view showing a second plating process for depositing a second metal layer on the first metal layer. FIG. 12 is a view showing a removing process for removing the resist pattern. FIG. 13A is a diagram showing a separation step of separating the combination of the first metal layer and the second metal layer from the pattern substrate. FIG. 13B is a plan view showing a case where the vapor deposition mask of FIG. 13A is viewed from the second surface side. FIG. 14 is a cross-sectional view showing a first film forming step of forming a first metal layer on a substrate in the first modification of the embodiment of the present invention. FIG. 15 is a cross-sectional view showing an exposure process for exposing a resist film in a first modification of the embodiment of the present invention. FIG. 16 is a cross-sectional view showing a resist pattern formed on the substrate and the first metal layer in the first modification of the embodiment of the present invention. FIG. 17 is a cross-sectional view showing a second plating process for depositing a second metal layer on the first metal layer in the first modification of the embodiment of the present invention. FIG. 18 is a cross-sectional view showing a vapor deposition mask in a first modification of the embodiment of the present invention. FIG. 19 is a cross-sectional view showing a step of providing a resist film on a substrate on which a light-shielding conductive pattern is formed in the second modification of the embodiment of the present invention. FIG. 20 is a cross-sectional view showing an exposure process for exposing a resist film in a second modification of the embodiment of the present invention. FIG. 21 is a sectional view showing a resist pattern formed on a substrate in a second modification of the embodiment of the present invention. FIG. 22 is a cross-sectional view showing a plating process for depositing a metal layer on a light-shielding conductive pattern in a second modification of the embodiment of the present invention. FIG. 23A is a cross-sectional view showing a vapor deposition mask in a second modification of the exemplary embodiment of the present invention. FIG. 23B is a plan view showing a case where the vapor deposition mask of FIG. 23A is viewed from the second surface side. FIG. 24 is a view showing a modification of the shape of the first opening of the through hole. FIG. 25 is a diagram illustrating a modification of the shape of the first opening of the through hole. FIG. 26 is a diagram showing a modification of the shape of the first opening of the through hole. FIG. 27 is a view showing a modification of the shape of the first opening of the through hole. FIG. 28 is a view showing a modification of the shape of the first opening of the through hole. FIG. 29 is a diagram illustrating a modification of the shape of the first opening of the through hole. FIG. 30 is a view showing a modification of the shape of the first opening of the through hole. FIG. 31 is a view showing a modification of the shape of the first opening of the through hole. FIG. 32 is a view showing a modification of the vapor deposition mask device including the vapor deposition mask.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  1 to 32 are diagrams for explaining an embodiment and its modification according to the present invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, the present invention can be applied to a method of manufacturing a vapor deposition mask used for various purposes without being limited to such application.

  It should be noted that the shape, geometric conditions, physical characteristics, and the degree thereof are used in the present specification, for example, terms such as “parallel”, “orthogonal”, “same”, “equivalent”, lengths and angles, Physical property values and the like are not limited to strict meanings, but are interpreted to include a range where a similar function can be expected.

(Deposition mask device)
First, an example of a vapor deposition mask apparatus including a vapor deposition mask will be described with reference to FIGS. Here, FIG. 1 is a plan view showing an example of a vapor deposition mask device including a vapor deposition mask, and FIG. 2 is a diagram for explaining a method of using the vapor deposition mask device shown in FIG. 3A is a plan view showing the vapor deposition mask from the first surface side, and FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3A.

  The vapor deposition mask device 10 shown in FIGS. 1 and 2 includes a plurality of vapor deposition masks 20 having a substantially rectangular shape in plan view, and a frame 15 attached to the peripheral edge of the plurality of vapor deposition masks 20. ing. Each vapor deposition mask 20 is provided with a plurality of through holes 25 penetrating the vapor deposition mask 20. As shown in FIG. 2, the vapor deposition mask device 10 is supported in the vapor deposition device 90 so that the vapor deposition mask 20 faces the lower surface of a substrate, for example, an organic EL substrate 92, and the organic EL substrate 92. Used for the deposition of vapor deposition materials.

  In the vapor deposition apparatus 90, the vapor deposition mask 20 and the organic EL substrate 92 come into close contact with each other by a magnetic force from a magnet (not shown). In the vapor deposition apparatus 90, a crucible 94 for accommodating a vapor deposition material (for example, an organic light emitting material) 98 and a heater 96 for heating the crucible 94 are disposed below the vapor deposition mask apparatus 10. The vapor deposition material 98 in the crucible 94 is vaporized or sublimated by heating from the heater 96 and adheres to the surface of the organic EL substrate 92. As described above, a large number of through holes 25 are formed in the vapor deposition mask 20, and the vapor deposition material 98 adheres to the organic EL substrate 92 through the through holes 25. As a result, the vapor deposition material 98 is formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20. In FIG. 2, a surface (hereinafter also referred to as a first surface) that faces the organic EL substrate 92 during the vapor deposition process among the surfaces of the vapor deposition mask 20 is denoted by reference numeral 20 a. Moreover, the surface (henceforth the 2nd surface) located in the vapor deposition source (here crucible 94) side of the vapor deposition material 98 among the surfaces of the vapor deposition mask 20 is represented by the code | symbol 20b.

  As described above, in the present embodiment, the through holes 25 are arranged in a predetermined pattern in each effective region 22. In order to perform color display, the vapor deposition mask 20 (vapor deposition mask device 10) and the organic EL substrate 92 are relatively moved little by little along the arrangement direction of the through holes 25 (one direction described above). The organic light emitting material, green organic light emitting material, and blue organic light emitting material may be deposited in this order.

  The frame 15 of the vapor deposition mask device 10 is attached to the peripheral edge of the rectangular vapor deposition mask 20. The frame 15 holds the vapor deposition mask 20 in a stretched state so that the vapor deposition mask 20 is not bent. The vapor deposition mask 20 and the frame 15 are fixed to each other, for example, by spot welding.

By the way, a vapor deposition process may be implemented inside the vapor deposition apparatus 90 used as a high temperature atmosphere.
In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients. In this case, if the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 and the organic EL substrate 92 are greatly different, a positional shift caused by a difference in their dimensional change occurs. The dimensional accuracy and position accuracy of the vapor deposition material will decrease. In order to solve such a problem, it is preferable that the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 are equal to the thermal expansion coefficient of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. For example, iron alloys such as invar material containing 34 to 38% by mass of nickel, super invar material containing cobalt in addition to 30 to 34% by mass of nickel, and low thermal expansion Fe- containing 38 to 54% by mass of nickel. A Ni-based plating alloy or the like can be used as a material for the first metal layer 32 and the second metal layer 37 (described later) constituting the vapor deposition mask 20. In the present specification, the numerical range represented by the symbol “to” includes numerical values placed before and after the symbol “to”. For example, the numerical range defined by the expression “34-38 mass%” is the same as the numerical range defined by the expression “34 mass% or more and 38 mass% or less”.

  In the vapor deposition process, if the temperature of the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 does not reach a high temperature, the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is equal to the thermal expansion coefficient of the organic EL substrate 92. There is no need to make the value of. In this case, various materials other than the above-described iron alloy containing nickel can be used as materials for the first metal layer 32 and the second metal layer 37 described later constituting the vapor deposition mask 20. For example, an iron alloy containing chromium, nickel, a nickel-cobalt alloy, or the like can be used. As the iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used.

(Deposition mask)
Next, the vapor deposition mask 20 will be described in detail. As shown in FIG. 1, in the present embodiment, the vapor deposition mask 20 has a substantially rectangular shape in a plan view, more precisely, a substantially rectangular shape in a plan view. The vapor deposition mask 20 includes an effective area 22 in which the through holes 25 are formed in a regular arrangement, and a surrounding area 23 surrounding the effective area 22. The surrounding area 23 is an area for supporting the effective area 22 and is not an area through which a deposition material intended to be deposited on the substrate passes. For example, in the vapor deposition mask 20 used for vapor deposition of an organic light emitting material for an organic EL display device, the effective region 22 is a display region of the organic EL substrate 92 in which the organic light emitting material is vapor deposited to form pixels. It is a region in the vapor deposition mask 20 that faces the area. However, through holes and recesses may be formed in the peripheral region 23 for various purposes. In the example shown in FIG. 1, each effective region 22 has a substantially rectangular shape in plan view, more precisely, a substantially rectangular shape in plan view. Although not shown, each effective region 22 can have various shapes of contours according to the shape of the display region of the organic EL substrate 92. For example, each effective area 22 may have a circular outline.

  In the illustrated example, the plurality of effective regions 22 of the vapor deposition mask 20 are arranged in a row at a predetermined interval along one direction parallel to the longitudinal direction of the vapor deposition mask 20. In the illustrated example, one effective area 22 corresponds to one organic EL display device. That is, according to the vapor deposition mask apparatus 10 (deposition mask 20) shown in FIG. 1, vapor deposition with multiple surfaces is possible.

  As shown in FIG. 3A, in the illustrated example, the plurality of through holes 25 formed in each effective region 22 are arranged at predetermined pitches along two directions orthogonal to each other in the effective region 22. Yes. The shape and the like of the through hole 25 will be further described in detail with reference to FIGS. 3A and 4.

  As shown in FIGS. 3A and 4, the vapor deposition mask 20 is provided with a first metal layer 32 provided with the first opening 30 in a predetermined pattern, and a second opening 35 communicating with the first opening 30. The second metal layer 37 is provided. The second metal layer 37 is disposed closer to the second surface 20 b of the vapor deposition mask 20 than the first metal layer 32. In the example shown in FIG. 4, the first metal layer 32 constitutes the first surface 20 a of the vapor deposition mask 20, and the second metal layer 37 constitutes the second surface 20 b of the vapor deposition mask 20.

  In the present embodiment, the first opening 30 and the second opening 35 communicate with each other, whereby the through hole 25 penetrating the vapor deposition mask 20 is configured. In this case, the opening size and the opening shape of the through hole 25 on the first surface 20 a side of the vapor deposition mask 20 are defined by the first opening 30 of the first metal layer 32. On the other hand, the opening size and the opening shape of the through hole 25 on the second surface 20 b side of the vapor deposition mask 20 are defined by the second opening 35 of the second metal layer 37. In other words, both the shape defined by the first opening 30 of the first metal layer 32 and the shape defined by the second opening 35 of the second metal layer 37 are given to the through hole 25. Yes.

  As shown in FIG. 3A, the first opening 30 constituting the through hole 25 has a plurality of holes in a plan view, that is, when the through hole 25 of the vapor deposition mask 20 is viewed along the normal direction of the vapor deposition mask 20. It has a polygonal outline formed by joining linear linear portions 30a. Similarly, the second opening portion 35 has a polygonal outline formed by joining a plurality of linear linear portions 35a in plan view. In FIG. 3A, the code | symbol 30b represents the coupling | bond part to which the two adjacent linear parts 30a of the 1st opening part 30 are connected. Similarly, reference numeral 35b represents a coupling portion where two adjacent linear portions 35a of the second opening 35 are connected. As shown in FIG. 3A, the first opening 30 and the second opening 35 are configured such that when the deposition mask 20 is viewed along the normal direction of the deposition mask 20, the outline of the second opening 35 is the first opening. It is comprised so that the outline of the part 30 may be enclosed.

  In the present embodiment, an example is shown in which the first opening 30 and the second opening 35 are square, more specifically, square. Further, the first opening 30 and the second opening 35 may have other polygonal shapes such as a hexagonal shape and an octagonal shape. The “polygonal shape” includes not only the case where the above-described coupling portion 30b and the coupling portion 35b are angular, but also the case where the coupling portion 30b and the coupling portion 35b are rounded. It is a concept. Although not shown, the first opening 30 and the second opening 35 may be circular. Moreover, as long as the 2nd opening part 35 has the outline which surrounds the 1st opening part 30 in planar view, the shape of the 1st opening part 30 and the shape of the 2nd opening part 35 do not need to be similar.

  Hereinafter, the linear portion 30a and the coupling portion 30b of the first opening 30 and the linear portion 35a and the coupling portion 35b of the second opening 35 will be described with reference to FIG. 3B in addition to FIG. 3A. FIG. 3B is an enlarged view of the outlines of the first opening and the second opening shown in FIG. 3A. In FIG. 3B, symbol φ indicates an internal angle in the polygonal first opening 30.

  In the present embodiment, the linear portion 30a of the first opening 30 extends linearly. In this case, as shown in FIG. 3B, the linear part 35 a of the second opening 35 is located at one end and the other end of the corresponding linear part 30 a of the first opening 30 in the outline of the second opening 35. It can be defined as a portion located between two straight lines Lr orthogonal to the linear portion 30a. Further, the coupling portion 35b of the second opening 35 can be defined as a portion located outside the straight line Lr orthogonal to the linear portion 30a.

  Hereinafter, the outline of the first opening 30 and the outline of the second opening 35 will be described in more detail. In FIG. 3A and FIG. 3B, the distance between the intermediate point P1 of the linear part 30a of the first opening 30 and the intermediate point P2 of the linear part 35a of the second opening 35 in plan view is denoted by d1. It is represented. Further, the shortest distance between the coupling portion 30b of the first opening 30 and the coupling portion 35b of the second opening 35 in plan view is represented by reference sign d2. Preferably, the 1st opening part 30 and the 2nd opening part 35 are comprised so that the shortest distance d2 may become smaller than the distance d1. For example, the value obtained by subtracting the shortest distance d2 from the distance d1 is larger than 0 μm and 5 μm or less. This is because a plurality of second openings of the second metal layer 37 are compared with the case where the distance between the outline of the first opening 30 and the outline of the second opening 35 is constant regardless of the position. The area of the portion in contact with the coupling portion 35b of the 35 can be increased. This can bring about an effect of increasing the strength of the vapor deposition mask 20 on the second surface 20b side.

  For example, as described above, when the vapor deposition process is performed using the vapor deposition mask 20, the vapor deposition mask 20 is held in a stretched state by the frame 15 so that the vapor deposition mask 20 is not bent. In this case, the stress generated in the vapor deposition mask 20 due to the tension applied to the vapor deposition mask 20 is generally the coupling portion 30b to which the linear portion 30a of the first opening 30 is connected, or the linear shape of the second opening 35. It is thought that it concentrates on the coupling | bond part 35b to which the part 35a is connected. Even in this case, according to the present embodiment, by setting the shortest distance d2 to be small, the area of the portion of the second metal layer 37 that contacts the coupling portions 35b of the plurality of second openings 35 is further increased. Largely secured. Therefore, the strength of the vapor deposition mask on the side where the second opening is provided can be increased. For example, it is possible to prevent the coupling portion 35 b of the second opening 35 from being damaged based on the tension applied to the vapor deposition mask 20.

  Preferably, the coupling portion 35b of the second opening 35 has a rounded shape, for example, a curved shape. That is, in the coupling portion 35b, the two adjacent linear portions 35a of the second opening 35 are smoothly connected. For this reason, when performing a vapor deposition process using the vapor deposition mask 20, it can suppress that stress concentrates on the coupling | bond part 35b of the 2nd opening part 35. FIG. Also by this, it can suppress that the connection part 35b of the 2nd opening part 35 is damaged based on the tension | tensile_strength applied to the vapor deposition mask 20. FIG. Similarly, the coupling portion 30b of the first opening 30 preferably has a rounded shape, for example, a curved shape.

Next, the cross-sectional structure of the vapor deposition mask 20 will be described in detail. In FIG. 4, reference numeral 41 represents a connection portion where the first metal layer 32 and the second metal layer 37 are connected. In FIG. 4, an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other is shown. However, the present invention is not limited to this, and the gap between the first metal layer 32 and the second metal layer 37 is shown. Other layers may be interposed between the two layers.
For example, a catalyst layer for promoting precipitation of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.

FIG. 5 is an enlarged view showing a part of the first metal layer 32 and the second metal layer 37 of FIG.
As shown in FIG. 5, the width M2 of the second metal layer 37 on the second surface 20b of the vapor deposition mask 20 is smaller than the width M1 of the first metal layer 32 on the first surface 20a of the vapor deposition mask 20. In other words, the opening dimension S2 of the through hole 25 (second opening 35) in the second surface 20b is larger than the opening dimension S1 of the through hole 25 (first opening 30) in the first surface 20a. Hereinafter, advantages of configuring the first metal layer 32 and the second metal layer 37 in this way will be described.

  The vapor deposition material 98 flying from the second surface 20 b side of the vapor deposition mask 20 adheres to the organic EL substrate 92 through the second opening 35 and the first opening 30 of the through hole 25 in order. A region of the organic EL substrate 92 to which the vapor deposition material 98 adheres is mainly determined by the opening size S1 and the opening shape of the through hole 25 in the first surface 20a. By the way, as shown by an arrow L1 from the second surface 20b side to the first surface 20a in FIG. 4, the vapor deposition material 98 is along the normal direction N of the vapor deposition mask 20 from the crucible 94 toward the organic EL substrate 92. In addition to movement, the vapor deposition mask 20 may move in a direction greatly inclined with respect to the normal direction N of the vapor deposition mask 20. Here, assuming that the opening dimension S2 of the through hole 25 in the second surface 20b is the same as the opening dimension S1 of the through hole 25 in the first surface 20a, it is greatly inclined with respect to the normal direction N of the vapor deposition mask 20. Most of the vapor deposition material 98 moving in the direction reaches the wall surface 36 of the second opening 35 of the through hole 25 and adheres before reaching the organic EL substrate 92 through the through hole 25. Therefore, in order to increase the utilization efficiency of the vapor deposition material 98, it can be said that it is preferable to increase the opening dimension S2 of the second opening 35, that is, to reduce the width M2 of the second metal layer 37.

  In FIG. 4, the minimum angle formed by the straight line L1 passing through the end portion 38 of the second metal layer 37 and the end portion 33 of the first metal layer 32 with respect to the normal direction N of the vapor deposition mask 20 is represented by reference sign θ1. ing. In order to make the vapor deposition material 98 moving obliquely reach the organic EL substrate 92 as much as possible without reaching the wall surface 36 of the second opening 35, it is advantageous to increase the angle θ1. In order to increase the angle θ1, it is effective to make the width M2 of the second metal layer 37 smaller than the width M1 of the first metal layer 32. As is apparent from the figure, it is also effective to reduce the thickness T1 of the first metal layer 32 and the thickness T2 of the second metal layer 37 to increase the angle θ1. Here, the “thickness T1 of the first metal layer 32” means the thickness of the portion of the first metal layer 32 connected to the second metal layer 37. If the width M2 of the second metal layer 37, the thickness T1 of the first metal layer 32, and the thickness T2 of the second metal layer 37 are excessively reduced, the strength of the vapor deposition mask 20 is reduced. It is conceivable that the vapor deposition mask 20 is damaged during use. For example, it is conceivable that the vapor deposition mask 20 is damaged due to the tensile stress applied to the vapor deposition mask 20 when the vapor deposition mask 20 is stretched on the frame 15. Considering these points, it can be said that the dimensions of the first metal layer 32 and the second metal layer 37 are preferably set in the following ranges. Thereby, the above-mentioned angle θ1 can be set to 45 ° or more, for example.

-Width M1 of the first metal layer 32: 5 to 25 μm
-Width M2 of the second metal layer 37: 2 to 20 μm
-Thickness T0 of vapor deposition mask 20: 5 to 50 [mu] m
-Thickness T1 of the first metal layer 32: 5 [mu] m or less-Thickness T2 of the second metal layer 37: 2-50 [mu] m, more preferably 3-50 [mu] m, more preferably 3-30 [mu] m, still more preferably 3-25 [mu] m

Table 1 shows an example of the dimension values of the first metal layer 32 and the second metal layer 37 obtained in accordance with the number of display pixels and the number of display pixels in the 5-inch organic EL display device. “FHD” means Full High Definition, “WQHD” means Wide Quad High Definition, and “UHD” means Ultra High Definition.

  Next, the shape of the first metal layer 32 will be described in more detail. As shown by a dotted line in FIG. 5, when the first metal layer 32 has a shape that is greatly raised toward the second surface 20 b at the end 33, the second opening 35 of the through hole 25 is formed. It is conceivable that much of the vapor deposition material 98 that has passed through reaches the wall surface 31 of the first metal layer 32 and adheres thereto. In order to suppress the adhesion of the vapor deposition material 98 to the first metal layer 32 in the vicinity of the end portion 33, as shown in FIG. 5, the first metal layer 32 includes the first metal layer 32 at the end portion 33 and the vicinity thereof. It is preferable that the metal layer 32 has a thickness smaller than the thickness T <b> 1 in the portion connected to the second metal layer 37. For example, as shown in FIG. 5, it is preferable that the thickness of the first metal layer 32 monotonously decreases from the portion connected to the second metal layer 37 of the first metal layer 32 toward the end portion 33. . Such a shape of the first metal layer 32 can be realized by forming the first metal layer 32 by plating as described later.

  In FIG. 5, reference sign θ <b> 2 represents an angle formed at the end 33 by the tangential plane L <b> 2 to the wall surface 31 of the first metal layer 32 and the normal direction N of the vapor deposition mask 20. In order to prevent the vapor deposition material 98 after passing through the second opening 35 of the through hole 25 from adhering to the wall surface 31 of the first metal layer 32, it is also effective to make the angle θ2 larger than 0 °. . Preferably, the angle θ2 is 30 ° or more, and more preferably 45 ° or more. Such an angle θ2 can also be realized by forming the first metal layer 32 by plating. The “wall surface 31” is a surface that defines the first opening 30 in the surface of the first metal layer 32. Similarly, the above-mentioned “wall surface 36” is a surface that defines the second opening 35 in the surface of the second metal layer 37.

Next, the shape of the second metal layer 37 will be described in more detail. Preferably, as shown in FIG. 5, the second metal layer 37 has a shape that tapers from the first surface 20a side toward the second surface 20b side. For this reason, the opening dimension S2 of the through hole 25 in the second surface 20b is larger than the dimension S0 of the through hole 25 in the connection portion 41 between the first metal layer 32 and the second metal layer 37.
The angle θ1 is determined based on the relationship between the width M1 of the first metal layer 32 on the first surface 20a and the width M2 of the second metal layer 37 on the second surface 20b. In other words, the above-described angle θ1 is determined based on the relationship between the opening dimension S1 of the through hole 25 in the first surface 20a and the opening dimension S2 of the through hole 25 in the second surface 20b. That is, the angle θ1 described above is not affected by the dimension S0 of the through hole 25 in the connection portion 41 between the first metal layer 32 and the second metal layer 37. On the other hand, the volume of the second metal layer 37 increases as the dimension S0 of the through hole 25 in the connection portion 41 decreases, and as a result, the strength of the vapor deposition mask 20 increases. Therefore, the second metal layer 37 has a shape that tapers from the first surface 20a side to the second surface 20b side, so that the angle θ1 can be efficiently achieved while ensuring a sufficient volume of the second metal layer 37. It means that it can be enlarged.

(Method for manufacturing vapor deposition mask)
Next, a method of manufacturing the vapor deposition mask 20 having the above configuration will be described with reference to FIGS.

(First film formation step)
First, the first film forming process for forming the first metal layer 32 provided with the first openings 30 in a predetermined pattern on the insulating substrate 51 will be described. First, as shown in FIG. 6, an insulating substrate 51 is prepared. A conductive pattern 52 having a pattern corresponding to the first metal layer 32 and having conductivity is formed on the substrate 51. As long as it has insulation and appropriate strength, the material constituting the substrate 51 and the thickness of the substrate 51 are not particularly limited. For example, glass, synthetic resin, or the like can be used as a material constituting the substrate 51.

  As a material constituting the conductive pattern 52, a conductive material such as a metal material or oxide conductivity is appropriately used. Examples of the metal material include chrome and copper. Preferably, a material having high adhesion to a resist pattern 55 described later is used as a material constituting the conductive pattern 52. For example, when the resist pattern 55 is formed by patterning a so-called dry film, such as a resist film containing an acrylic photo-curable resin, the resist pattern 55 is a high material for the dry film as a material constituting the conductive pattern 52. It is preferable to use copper having adhesiveness.

  As will be described later, a first metal layer 32 is formed on the conductive pattern 52 so as to cover the conductive pattern 52, and the first metal layer 32 is separated from the conductive pattern 52 in a subsequent process. . Therefore, a depression corresponding to the thickness of the conductive pattern 52 is usually formed on the surface of the first metal layer 32 on the side in contact with the conductive pattern 52. Considering this point, it is preferable that the thickness of the conductive pattern 52 is small as long as the conductive pattern 52 has conductivity necessary for the electrolytic plating process. For example, the thickness of the conductive pattern 52 is in the range of 50 to 500 nm.

  Next, a first plating process is performed in which the first plating solution is supplied onto the substrate 51 on which the conductive pattern 52 is formed, and the first metal layer 32 is deposited on the conductive pattern 52. For example, the substrate 51 on which the conductive pattern 52 is formed is immersed in a plating tank filled with the first plating solution. As a result, as shown in FIG. 7A, the first metal layer 32 provided with the first openings 30 in a predetermined pattern on the substrate 51 can be obtained. FIG. 7B is a plan view showing the first metal layer 32 formed on the substrate 51.

  7A, the first metal layer 32 has not only a portion overlapping the conductive pattern 52 when viewed along the normal direction of the substrate 51, but also the conductive pattern 52, as shown in FIG. It can also be formed on non-overlapping parts. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping the end portion 53 of the conductive pattern 52. As a result, as shown in FIG. 7A, the end portion 33 of the first metal layer 32 may be located at a portion that does not overlap the conductive pattern 52 when viewed along the normal direction of the substrate 51. On the other hand, the thickness of the first metal layer 32 at the end portion 33 is smaller than the thickness at the central portion by the amount that the metal deposition has advanced in the plate surface direction of the substrate 51 instead of the thickness direction. For example, as shown in FIG. 7A, the thickness of the first metal layer 32 decreases monotonously at least partially from the center of the first metal layer 32 toward the end 33. As a result, the angle θ2 described above becomes a value larger than 0 °.

  In FIG. 7A, the width of the portion of the first metal layer 32 that does not overlap the conductive pattern 52 is represented by the symbol w. The width w is in the range of 0.5 to 5.0 μm, for example. The dimension of the conductive pattern 52 is set in consideration of the width w. The value of 5.0 μm that is the upper limit of the width w is set when the thickness T1 of the first metal layer 32 is 5.0 μm, for example.

As long as the first metal layer 32 can be deposited on the conductive pattern 52, the specific method of the first plating process is not particularly limited. For example, the first plating process may be performed as a so-called electrolytic plating process in which the first metal layer 32 is deposited on the conductive pattern 52 by passing a current through the conductive pattern 52. Alternatively, the first plating process may be an electroless plating process. When the first plating process is an electroless plating process, an appropriate catalyst layer is provided on the conductive pattern 52.
Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the conductive pattern 52.

  The components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate and a solution containing iron sulfamate can be used. The plating solution may contain additives such as malonic acid and saccharin.

(Second film formation step)
Next, a second film formation step is performed in which a second metal layer 37 provided with a second opening 35 communicating with the first opening 30 is formed on the first metal layer 32. First, as shown in FIG. 8, a step of providing a resist film 54 containing a photocurable resin on the substrate 51 and the first metal layer 32 is performed. For example, the negative resist film 54 is formed by attaching a dry film on the substrate 51 and the first metal layer 32. Examples of the dry film include those containing an acrylic photocurable resin such as RY3310 manufactured by Hitachi Chemical.

  Next, as shown in FIG. 9, the resist film 54 is exposed by irradiating the resist film 54 with light incident on the substrate 51 from the side opposite to the side where the resist film 54 is provided in the substrate 51. An exposure process is performed. Thus, in the exposure process, light is irradiated onto the resist film 54 from the substrate 51 side, that is, from the first metal layer 32 side formed on the substrate 51. In this case, since the first metal layer 32 has a light shielding property, the light reaching the first metal layer 32 is blocked by the first metal layer 32 without reaching the resist film 54. That is, the first metal layer 32 formed on the substrate 51 functions as an exposure mask that partially blocks the light applied to the resist film 54. FIG. 9 shows an example in which the light emitted toward the substrate 51 is parallel light E that travels along the normal direction of the substrate 51.

  Thereafter, a developing process for developing the resist film 54 is performed. FIG. 10A is a cross-sectional view showing a resist pattern 55 formed on the substrate 51 and the first metal layer 32 by developing the resist film 54. FIG. 10B is a plan view showing the resist pattern 55 of FIG. 10A. As described above, since the light irradiated toward the resist film 54 is blocked by the first metal layer 32 during the exposure process, the resist pattern 55 has the gap 56 formed on the first metal layer 32. doing. Further, since the gap 56 is formed through an exposure process using the first metal layer 32 as an exposure mask, the gap 56 of the resist pattern 55 is accurately formed on the first metal layer 32. That is, the relative positional accuracy of the gap 56 of the resist pattern 55 with respect to the first metal layer 32 is extremely high.

  By the way, in the above-described exposure step, when light passes near the end 33 of the first metal layer 32, the light wraps around, that is, diffracts. As a result, as shown in FIG. 9, the light applied to the resist film 54 includes not only the parallel light E but also the inclined light E <b> 1 that travels in a direction inclined with respect to the normal direction of the substrate 51. Become. For this reason, as shown in FIG. 10A, the distance between the side surfaces 57 of the resist pattern 55 that defines the gap 56 of the resist pattern 55 may become narrower as the distance from the substrate 51 increases. That is, the resist pattern 55 may have a shape in which the width of the resist pattern 55 increases as the distance from the substrate 51 increases, that is, a so-called reverse tapered shape. As a result, as will be described later, it is possible to manufacture the vapor deposition mask 20 including the second metal layer 37 having a shape that tapers from the first surface 20a side toward the second surface 20b side.

In general, the position near the linear portion 30a of the first opening 30 formed in the first metal layer 32 is closer to the coupling portion 30b of the first opening 30 formed in the first metal layer 32. Compared with the position in the vicinity of the first metal layer 32, the light is greatly influenced by the diffracted light generated when passing through the vicinity of the end 33 of the first metal layer 32. This may be due to the proximity effect of light.
In FIG. 10B, symbol d3 represents the shortest distance in plan view between the contour of the resist pattern 55 on the outer surface 58 of the resist pattern 55 and the intermediate point P1 of the linear portion 30a of the contour of the first opening 30. Yes. Reference sign d4 represents the shortest distance in plan view between the contour of the resist pattern 55 on the outer surface 58 of the resist pattern 55 and the coupling portion 30b of the contour of the first opening 30. As described above, when the influence of the diffracted light becomes small at a position near the coupling portion 30b of the first opening 30, the shortest distance d4 becomes smaller than the shortest distance d3 as shown in FIG. 10B.
Further, based on the proximity effect of light, as shown in FIG. 10B, the contour of the resist pattern 55 on the outer surface 58 of the resist pattern 55 is rounded at a portion corresponding to the coupling portion 30b of the first opening 30. For example, it has a curved shape.

  In order to make the resist pattern 55 adhere more firmly to the substrate 51 and the first metal layer 32, a heat treatment step of heating the resist pattern 55 may be performed after the development step.

  Next, a second plating process is performed in which the second plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32. For example, the substrate 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with the second plating solution. Thereby, as shown in FIG. 11, the second metal layer 37 can be formed on the first metal layer 32.

  As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating process is not particularly limited. For example, the second plating process may be performed as a so-called electrolytic plating process in which the second metal layer 37 is deposited on the first metal layer 32 by passing a current through the first metal layer 32. Alternatively, the second plating process may be an electroless plating process. When the second plating process is an electroless plating process, an appropriate catalyst layer is provided on the first metal layer 32. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the first metal layer 32.

  As the second plating solution, the same plating solution as the first plating solution described above may be used. Alternatively, a plating solution different from the first plating solution may be used as the second plating solution. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal constituting the first metal layer 32 and the composition of the metal constituting the second metal layer 37 are also the same.

  Although FIG. 11 shows an example in which the second plating process is continued until the outer surface 58 of the resist pattern 55 and the outer surface of the second metal layer 37 coincide with each other, the present invention is not limited to this. . The second plating process may be stopped with the outer surface of the second metal layer 37 positioned below the outer surface 58 of the resist pattern 55.

(Removal process)
Thereafter, as shown in FIG. 12, a removing step for removing the resist pattern 55 is performed.
For example, the resist pattern 55 can be peeled from the substrate 51, the first metal layer 32, and the second metal layer 37 by using an alkaline stripping solution.

(Separation process)
Next, a separation step of separating the combination of the first metal layer 32 and the second metal layer 37 from the substrate 51 is performed. As a result, as shown in FIG. 13A, the first metal layer 32 provided with the first opening 30 in a predetermined pattern and the second metal provided with the second opening 35 communicating with the first opening 30. The vapor deposition mask 20 provided with the layer 37 can be obtained. FIG. 13B is a plan view showing the case where the vapor deposition mask 20 is viewed from the second surface 20b side.

  Hereinafter, an example of the separation step will be described in detail. First, a film in which a substance having adhesiveness is provided by coating or the like is attached to a combination of the first metal layer 32 and the second metal layer 37 formed on the substrate 51. Next, the film is pulled away from the substrate 51 by pulling up or winding up the film, thereby separating the combination of the first metal layer 32 and the second metal layer 37 from the substrate 51 of the pattern substrate 50. Thereafter, the film is peeled off from the combination of the first metal layer 32 and the second metal layer 37.

Note that as the substance having adhesiveness, a substance that loses adhesiveness when irradiated with light such as UV or when heated may be used. In this case, after the combination of the first metal layer 32 and the second metal layer 37 is separated from the substrate 51, a step of irradiating the film with light and a step of heating the film are performed. Thereby, the process of peeling the film from the combination of the first metal layer 32 and the second metal layer 37 can be facilitated. For example, the film can be peeled off in a state in which the film and the combination of the first metal layer 32 and the second metal layer 37 are maintained in parallel with each other as much as possible. Accordingly, it is possible to prevent the combined body of the first metal layer 32 and the second metal layer 37 from being curved when the film is peeled off. This causes the deposition mask 20 to be deformed such as curved. This can be suppressed.
In addition, in the separation process, first, a gap for triggering separation is formed between the combined body of the first metal layer 32 and the second metal layer 37 and the substrate 51, and then air is introduced into the gap. May be sprayed to facilitate the separation process.

  According to the present embodiment, as described above, the second plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32, whereby the vapor deposition mask 20. Is produced. Therefore, both the shape defined by the first opening 30 of the first metal layer 32 and the shape defined by the second opening 35 of the second metal layer 37 are formed in the through hole 25 of the vapor deposition mask 20. Can be granted. Therefore, the through hole 25 having a complicated shape can be precisely formed. For example, the through hole 25 capable of increasing the above-described angle θ1 can be obtained. Thereby, the utilization efficiency of the vapor deposition material 98 can be improved. Further, by forming the second metal layer 37 using a plating process, the thickness T0 of the vapor deposition mask 20 can be arbitrarily set independently of the shape of the through hole 25. For this reason, the vapor deposition mask 20 can have sufficient strength. Therefore, a high-definition organic EL display device can be manufactured, and the vapor deposition mask 20 excellent in durability can be provided.

Further, according to the present embodiment, in the exposure process for forming the resist pattern 55 on the substrate 51 and the first metal layer 32, the first metal layer 32 formed on the substrate 51 is formed on the resist film 54. It is used as an exposure mask that partially blocks the irradiated light. Therefore, the gap 56 of the resist pattern 55 can be accurately formed on the first metal layer 32.
Therefore, the second metal layer 37 can be formed with high positional accuracy with respect to the first metal layer 32. Thereby, the through-hole 25 having a complicated shape can be precisely formed.

Further, according to the present embodiment, in the exposure step, the resist film 54 is irradiated with light incident on the substrate 51 from the side of the substrate 51 opposite to the side on which the resist film 54 is provided.
Further, the first metal layer 32 positioned between the substrate 51 and the resist film 54 functions as an exposure mask that partially shields the light applied to the resist film 54. For this reason, when light diffraction occurs at the end portion 33 of the first metal layer 32, the resist pattern 55 has a shape in which the width of the resist pattern 55 increases as the distance from the substrate 51 increases, that is, a so-called reverse tapered shape. Therefore, as shown in FIG. 11 described above, it is possible to obtain the second metal layer 37 having a shape that tapers from the first surface 20a side toward the second surface 20b side. This makes it possible to efficiently increase the angle θ1 while ensuring a sufficient volume of the second metal layer 37.

  Further, according to the present embodiment, in the exposure process, the light incident on the substrate 51 from the side opposite to the side on which the resist film 54 is provided in the substrate 51 is irradiated onto the resist film 54. The feature of the shape of the exposed region of the resist film 54 based on the difference in the degree of diffraction of the resist pattern 55 is remarkably expressed on the outer surface 58 of the resist pattern 55. For this reason, as shown in FIG. 10B described above, the shortest distance in plan view between the contour of the resist pattern 55 on the outer surface 58 of the resist pattern 55 and the coupling portion 30b of the contour of the first opening 30 is the first. It becomes the smallest in the portion corresponding to the coupling portion 30b of the opening 30. When the second metal layer 37 is formed by the above-described second plating process using the gap 56 of the resist pattern 55, as shown in FIGS. 3A and 13B, the first opening 30 in the first surface 20a is formed. The shortest distance in plan view between the contour and the contour of the second opening 35 on the second surface 20b is minimized at the portion corresponding to the coupling portion 35b of the second opening 35. Thereby, the area of the portion of the second metal layer 37 that is in contact with the coupling portions 35b of the plurality of second openings 35 can be further increased. Thereby, the strength of the vapor deposition mask 20 on the second surface 20b side can be improved. For example, it is possible to prevent the coupling portion 35 b of the second opening 35 from being damaged based on the tension applied to the vapor deposition mask 20.

  In addition, according to the present embodiment, the characteristics of the shape of the exposed region of the resist film 54 based on the difference in the degree of light diffraction are remarkably expressed on the outer surface 58 of the resist pattern 55. As shown in FIG. 10B, the contour of the resist pattern 55 on the outer surface 58 of the resist pattern 55 has a rounded shape, for example, a curved shape, at a portion corresponding to the coupling portion 30b of the first opening 30. . As a result, the coupling portion 35b of the second opening 35 also has a rounded shape, for example, a curved shape. Also by this, it can suppress that the connection part 35b of the 2nd opening part 35 is damaged based on the tension | tensile_strength applied to the vapor deposition mask 20. FIG.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(First modification)
In the above-described embodiment, the example in which the first film forming process includes the first plating process for depositing the first metal layer 32 on the conductive pattern 52 formed on the substrate 51 has been described. That is, the example in which the first metal layer 32 is formed by plating is shown. However, the present invention is not limited to this, and the first metal layer 32 may be formed by other methods.

  For example, first, an insulating substrate 51 is prepared, and then the first metal layer 32 is provided over the entire region of the substrate 51. As a method of forming the first metal layer 32 on the substrate 51, a physical film forming method such as sputtering, a chemical film forming method, or the like can be used as appropriate. Thereafter, a resist pattern is formed on a portion of the first metal layer 32 other than the portion where the first opening 30 is to be formed, and then the first metal layer 32 is etched. By patterning the first metal layer 32 in this manner, the first metal layer 32 provided with the first openings 30 in a predetermined pattern can be formed on the substrate 51 as shown in FIG. In this case, the conductive pattern 52 does not need to be formed on the substrate 51.

  Thereafter, a resist film 54 containing a photocurable resin is provided on the substrate 51 and the first metal layer 32. Next, as shown in FIG. 15, the resist film 54 is exposed by irradiating the resist film 54 with light incident on the substrate 51 from the side opposite to the side where the resist film 54 is provided in the substrate 51. An exposure process is performed. Also in this modification, the first metal layer 32 formed on the substrate 51 functions as an exposure mask that partially shields the light applied to the resist film 54.

  Next, a developing process for developing the resist film 54 is performed. FIG. 16 is a cross-sectional view showing a resist pattern 55 formed on the substrate 51 and the first metal layer 32 by developing the resist film 54 shown in FIG. Also in the present modification, as in the case of the above-described present embodiment, the light irradiated toward the resist film 54 is blocked by the first metal layer 32 during the exposure process. A gap 56 formed on one metal layer 32 is provided.

  Thereafter, the second plating solution is supplied to the gaps 56 of the resist pattern 55 to perform the second plating treatment step for depositing the second metal layer 37 on the first metal layer 32. For example, the substrate 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with the second plating solution. Thereby, as shown in FIG. 17, the second metal layer 37 can be formed on the first metal layer 32.

  Thereafter, by performing the above-described removal step and separation step in the present embodiment, as shown in FIG. 18, the first metal layer 32 provided with the first openings 30 in a predetermined pattern, and the first openings The vapor deposition mask 20 including the second metal layer 37 provided with the second opening 35 communicating with the portion 30 can be obtained.

(Second modification)
In the present embodiment and the first modification described above, the example in which the vapor deposition mask 20 is configured by laminating at least two metal layers of the first metal layer 32 and the second metal layer 37 is shown. . However, it is not restricted to this, The vapor deposition mask 20 may be comprised by the one metal layer 27 in which the several through-hole 25 was formed by the predetermined pattern. Hereinafter, an example in which the vapor deposition mask 20 includes one metal layer 27 will be described with reference to FIGS. 19 to 23B. In the present modification, a portion located on the first surface 20 a in the through hole 25 from the first surface 20 a to the second surface 20 b of the vapor deposition mask 20 is referred to as a first opening 30. A portion located on the second surface 20 b is referred to as a second opening 35. Also in this modified example, the outline of the first opening 30 is a polygon formed by joining a plurality of linear linear parts 30a, and the outline of the second opening 35 is also It has a polygonal shape formed by joining a plurality of linear portions 35a.

  First, a method for manufacturing the vapor deposition mask 20 according to this modification will be described.

  First, as shown in FIG. 19, an insulating substrate 51 is prepared. A conductive pattern 52 having a pattern corresponding to the metal layer 27 and having conductivity and light shielding properties is formed on the substrate 51. As a material constituting the conductive pattern 52, a material having conductivity and light shielding properties is used. For example, chromium, copper, or the like is used.

(Film formation process)
Next, a film forming process for forming the metal layer 27 provided with the through holes 25 in a predetermined pattern on the substrate 51 is performed. First, as shown in FIG. 20, a step of providing a resist film 54 containing a photocurable resin on the surface of the substrate 51 where the conductive pattern 52 is formed is performed.
Next, as shown in FIG. 20, the resist film 54 is exposed by irradiating the resist film 54 with light incident on the substrate 51 from the side opposite to the side where the resist film 54 is provided in the substrate 51. An exposure process is performed. In the present modification, the light irradiated toward the resist film 54 is blocked by the conductive pattern 52 formed on the substrate 51 during the exposure process. That is, the conductive pattern 52 formed on the substrate 51 functions as an exposure mask that partially blocks the light applied to the resist film 54.

  Thereafter, a developing process for developing the resist film 54 is performed. FIG. 21 is a cross-sectional view showing a resist pattern 55 formed on the substrate 51 on which the conductive pattern 52 is formed by developing the resist film 54. As described above, since the light irradiated toward the resist film 54 is blocked by the conductive pattern 52 during the exposure process, the resist pattern 55 has a gap 56 formed on the conductive pattern 52. Yes. Since the gap 56 is formed through an exposure process using the conductive pattern 52 as an exposure mask, the gap 56 of the resist pattern 55 is accurately formed on the conductive pattern 52. That is, the relative positional accuracy of the gap 56 of the resist pattern 55 with respect to the conductive pattern 52 is extremely high.

  Also in the exposure process of this modified example, as in the case of the above-described embodiment and the first modified example, when light passes near the end portion 53 of the conductive pattern 52, the light wraps around, that is, is diffracted. Occurs. As a result, as shown in FIG. 20, the light applied to the resist film 54 includes not only the parallel light E but also the inclined light E <b> 1 that travels in a direction inclined with respect to the normal direction of the substrate 51. Become. For this reason, as shown in FIG. 21, the distance between the side surfaces 57 of the resist pattern 55 that defines the gap 56 of the resist pattern 55 becomes narrower as the distance from the substrate 51 increases. That is, the resist pattern 55 has a shape in which the width of the resist pattern 55 increases as the distance from the substrate 51 increases, that is, a so-called reverse tapered shape.

  Next, a plating process is performed in which a plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the metal layer 27 on the conductive pattern 52. For example, the substrate 51 on which the conductive pattern 52 is formed is immersed in a plating tank filled with a plating solution. As a result, the metal layer 27 can be formed on the conductive pattern 52 as shown in FIG.

  As long as the metal layer 27 can be deposited on the conductive pattern 52, the specific method of the plating process is not particularly limited. For example, the plating process may be performed as a so-called electrolytic plating process in which the metal layer 27 is deposited on the conductive pattern 52 by passing a current through the conductive pattern 52. Alternatively, the plating process may be an electroless plating process. When the plating process is an electroless plating process, an appropriate catalyst layer is provided on the conductive pattern 52. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the conductive pattern 52.

  As the plating solution of this modification, the same plating solution as the first plating solution and the second plating solution in the present embodiment described above can be used.

  Thereafter, by performing the above-described removal step and separation step in the present embodiment, as shown in FIG. 23A, the vapor deposition mask 20 including the metal layer 27 provided with the through holes 25 in a predetermined pattern is obtained. Can do. FIG. 23B is a plan view illustrating the vapor deposition mask 20 as viewed from the second surface 20b side.

  According to this modification example, as described above, in the exposure process for forming the resist pattern 55 on the substrate 51 on which the conductive pattern 52 is formed, the conductive pattern 52 formed on the substrate 51 is a resist. It is used as an exposure mask that partially shields the light applied to the film 54. That is, the conductive pattern 52 that becomes a base when the metal layer 27 is deposited functions as an exposure mask that partially blocks the light applied to the resist film 54. Therefore, the gap 56 of the resist pattern 55 can be accurately formed on the conductive pattern 52. Therefore, it is possible to provide the vapor deposition mask 20 having the through holes 25 formed with high positional accuracy.

  Also in the present modification, light wraps around when the light passes through the vicinity of the end portion 53 of the conductive pattern 52 as in the case of the present embodiment and the first modification described above. Therefore, the resist pattern 55 has a shape in which the width of the resist pattern 55 becomes wider as the distance from the substrate 51 increases, that is, a so-called reverse taper shape. Therefore, as shown in FIG. 23A, the metal layer 27 has a shape that tapers from the first surface 20a side toward the second surface 20b side. As a result, as shown in FIG. 23B, when the deposition mask 20 is viewed along the normal direction N of the deposition mask 20, the contour of the second opening 35 surrounds the contour of the first opening 30. . Therefore, the angle θ1 shown in FIG. 23A can be ensured as in the case of the present embodiment and the first modification described above. As a result, the vapor deposition material 98 that moves in a direction greatly inclined with respect to the normal direction N of the vapor deposition mask 20 reaches the organic EL substrate 92 through the through hole 25 before the wall surface 26 of the through hole 25. It can suppress that it reaches | attains and adheres. Thereby, the utilization efficiency of the vapor deposition material 98 can be improved.

Further, in the exposure process of this modification, the light incident on the substrate 51 from the side opposite to the side on which the resist film 54 is provided in the substrate 51 is applied to the resist film 54, so the degree of light diffraction The feature of the shape of the exposed region of the resist film 54 based on the difference between the resist pattern 54 is remarkably expressed on the outer surface 58 of the resist pattern 55.
For this reason, also in this modification, as shown to FIG. 23B, the 1st opening part 30 and the 2nd opening part 35 are comprised so that the shortest distance d2 may become smaller than the distance d1. Accordingly, the area of the metal layer 27 that is in contact with the coupling portions 35b of the plurality of second openings 35 can be further increased. Thereby, the strength of the vapor deposition mask 20 on the second surface 20b side can be improved. For example, it is possible to prevent the coupling portion 35 b of the second opening 35 from being damaged based on the tension applied to the vapor deposition mask 20.
Also in this modification, the contour of the resist pattern 55 on the outer surface 58 of the resist pattern 55 has a rounded shape, for example, a curved shape. As a result, the coupling portion 35b of the second opening 35 also has a rounded shape, for example, a curved shape. Also by this, it can suppress that the connection part 35b of the 2nd opening part 35 is damaged based on the tension | tensile_strength applied to the vapor deposition mask 20. FIG.

  In the present modification, a conductive pattern 52 having conductivity and light shielding properties is formed on the substrate 51, and the metal layer 27 is formed on the conductive pattern 52 by plating. However, in the case where the plating process is an electroless plating process, the pattern that becomes the base when the metal layer 27 is deposited in the plating process does not necessarily have conductivity. Therefore, instead of the conductive pattern 52, a pattern that does not have conductivity but has light shielding properties may be used. That is, in this modification, the pattern that becomes the base when the metal layer 27 is deposited in the plating process may be a light-shielding pattern having a light-shielding property. The conductive pattern 52 described above is an example of a light shielding pattern.

(Modification of the shape of the first opening)
Further, in the above-described embodiment and each modified example, the example in which the first opening 30 has a quadrangular outline is shown. However, it is not restricted to this, As shown in FIG. 24, the 1st opening part 30 may have a hexagonal outline. Also in this case, the shortest distance d2 between the coupling portion 30b of the first opening 30 and the coupling portion 35b of the second opening 35 in the plan view is an intermediate point of the linear portion 30a of the first opening 30. And a distance d1 between the intermediate point of the linear portion 35a of the second opening 35 and the distance d1.

  Further, in the above-described embodiment and each modification, an example in which the linear portion 30a constituting the outline of the first opening 30 extends linearly, that is, the outline of the first opening 30 is polygonal. An example is shown. However, the present invention is not limited to this, and as shown in FIGS. 25 and 26, the contour of the first opening 30 may include a curved linear portion 30a. FIG. 25 shows an example in which the linear portion 30a is curved over the entire area. On the other hand, FIG. 26 shows an example in which the linear portion 30a includes a curved portion and a linear portion 30as.

  When the linear part 30a includes a curved part, the linear part 35a of the second opening 35 may be defined as follows. First, as shown in FIG. 25, a straight line Lh connecting two vertices existing in the outline of the first opening 30 is drawn. Subsequently, two straight lines Lr orthogonal to the straight line Lh are drawn at one end and the other end of the straight line Lh. At this time, a portion located between the two straight lines Lr in the outline of the second opening 35 is defined as a linear portion 35 a of the second opening 35. Moreover, the coupling | bond part 35b of the 2nd opening part 35 is defined as a part located outside the straight line Lr.

  25 and 26 described above, the linear portion 30a constituting the outline of the first opening 30 includes a curved portion that is convex toward the center of the first opening 30, thereby An example in which the linear portion 30 a is recessed toward the center of the first opening 30 is shown. However, the present invention is not limited to this, and as shown in FIG. 27, the linear portion 30 a is formed at the center of the first opening 30 by combining the plurality of linear portions 30 as to configure the linear portion 30 a. You may implement | achieve the form which dents toward.

  In the above-described FIGS. 25 to 27, the example in which the linear portion 30 a is recessed toward the center of the first opening portion 30 is shown. However, the present invention is not limited to this, and the first opening 30 may be configured such that the linear portion 30a swells away from the center of the first opening 30 as shown in FIG. Moreover, as shown in FIG. 29, the 1st opening part 30 may be comprised so that the outline of the 1st opening part 30 may bulge outside in the part of the coupling | bond part 30b.

  In FIGS. 25 to 29 described above, an example in which the first opening 30 has a substantially rectangular outline formed by joining four linear portions 30a is shown. However, the features of the contour of the first opening 30 shown in FIGS. 25 to 29 may be applied to the first opening 30 having another substantially polygonal contour such as a substantially hexagonal shape or a substantially octagonal shape. . The “substantially polygonal shape” is a concept including not only a case where the plurality of linear portions 30 a included in the first opening 30 are linear, but also a case where it is curved.

  In the above-described embodiment and each modification, the first opening 30 has an example having a so-called convex polygonal outline in which all the inner angles φ are less than 180 degrees. However, the present invention is not limited to this, and as shown in FIGS. 30 and 31, the first opening 30 has a so-called concave polygonal outline in which the size of at least one inner angle φ exceeds 180 degrees. You may have. It should be noted that, at a location where the inner angle φ exceeds 180 degrees, the shortest distance d2 between the coupling portion 30b of the first opening 30 and the coupling portion 35b of the second opening 35 is The distance d1 between the intermediate point P1 of the linear part 30a and the intermediate point P2 of the linear part 35a of the second opening 35 may not be smaller. At a location where the size of the inner angle φ is less than 180 degrees, the shortest distance d2 between the coupling portion 30b of the first opening 30 and the coupling portion 35b of the second opening 35 is the line of the first opening 30. The distance d1 is smaller than the distance d1 between the intermediate point P1 of the shaped part 30a and the intermediate point P2 of the linear part 35a of the second opening 35.

(Other variations)
In the above-described embodiment, an example in which a plurality of effective areas 22 are allocated in the longitudinal direction of the vapor deposition mask 20 has been described. Moreover, the example in which the some vapor deposition mask 20 was attached to the flame | frame 15 in the vapor deposition process was shown. However, the present invention is not limited to this, and as shown in FIG. 32, a vapor deposition mask 20 having a plurality of effective regions 22 arranged in a grid along both the width direction and the longitudinal direction may be used.

  In addition, although some modified examples with respect to the above-described embodiment have been described, naturally, a plurality of modified examples can be applied in combination as appropriate.

DESCRIPTION OF SYMBOLS 20 Deposition mask 20a 1st surface 20b 2nd surface 22 Effective area | region 23 Peripheral area | region 25 Through-hole 26 Wall surface 27 Metal layer 30 1st opening part 30a Linear part 30b Joint part 31 Wall surface 32 1st metal layer 33 End part 35 2nd Opening 35a Linear portion 35b Coupling portion 36 Wall surface 37 Second metal layer 38 End portion 41 Connection portion 51 Substrate 52 Conductive pattern 53 End portion 54 Resist film 55 Resist pattern 56 Gap 57 Side surface 58 Outer surface 58a Linear portion 58b Coupling portion 92 Organic EL substrate 98 Vapor deposition material

Claims (16)

A vapor deposition mask manufacturing method for manufacturing a vapor deposition mask in which a plurality of through holes are formed,
A first film forming step of forming a first metal layer provided with a first opening in a predetermined pattern on an insulating substrate;
A second film-forming step of forming a second metal layer provided with a second opening communicating with the first opening on the first metal layer;
Separating the combination of the first metal layer and the second metal layer from the substrate, and
The second film forming step includes
Providing a resist film containing a photocurable resin on the substrate and the first metal layer;
An exposure step of exposing the resist film by irradiating the resist film with light incident on the substrate from a side opposite to the side of the substrate on which the resist film is provided;
Developing the resist film to form a resist pattern having a gap formed on the first metal layer; and
A plating process for depositing the second metal layer on the first metal layer in the gap of the resist pattern. A conductive pattern having a pattern corresponding to the first metal layer is formed on the substrate,
The said 1st film-forming process is a vapor deposition mask manufacturing method of Claim 1 including the plating process process which deposits the said 1st metal layer on the said electroconductive pattern on the said board | substrate.   The said plating process process of a said 1st film-forming process includes the electrolytic plating process process which deposits the said 1st metal layer on the said electroconductive pattern by sending an electric current through the said electroconductive pattern. Deposition mask manufacturing method.   The said plating process process of a said 2nd film-forming process includes the electroplating process process which deposits the said 2nd metal layer on the said 1st metal layer by sending an electric current through the said 1st metal layer. The vapor deposition mask manufacturing method as described in any one of Claims 3-4.   5. The deposition mask manufacturing method according to claim 1, wherein a thickness of a portion of the first metal layer connected to the second metal layer is 5 μm or less.   The thickness of the said 2nd metal layer is a vapor deposition mask manufacturing method as described in any one of Claims 1 thru | or 5 which exists in the range of 3-50 micrometers. In the first film forming step, the first metal layer is formed on a first surface side of the vapor deposition mask,
In the second film formation step, the second metal layer is formed on the second surface side of the vapor deposition mask,
The first opening of the first metal layer on the first surface and the second opening of the second metal layer on the second surface are both formed by joining a plurality of linear portions. The vapor deposition mask manufacturing method according to any one of claims 1 to 6, wherein the vapor deposition mask has a contour. A vapor deposition mask in which a plurality of through holes extending from the first surface to the second surface are formed,
A first metal layer located on the first surface side and provided with a first opening in a predetermined pattern;
A second metal layer provided on the second surface side and provided with a second opening communicating with the first opening;
The second metal layer is configured such that a contour of the second opening surrounds a contour of the first opening when the deposition mask is viewed along a normal direction of the deposition mask.
Both the outline of the first opening on the first surface and the outline of the second opening on the second surface are formed by joining a plurality of linear portions,
When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the coupling portion where the two linear portions adjacent to the first opening portion are connected to each other, and the two adjacent apertures of the second opening portion are connected. The shortest distance between the connecting portion to which the linear portion is connected is a distance between an intermediate point of the linear portion of the first opening and an intermediate point of the linear portion of the second opening. The evaporation mask is also getting smaller.   The contour of the first opening on the first surface and the contour of the second opening on the second surface are both polygonal shapes formed by joining a plurality of linear portions. The vapor deposition mask according to claim 8.   The vapor deposition mask according to claim 8, wherein a contour of the first opening on the first surface and a contour of the second opening on the second surface include the curved linear portion. A vapor deposition mask manufacturing method for manufacturing a vapor deposition mask in which a plurality of through holes are formed,
Preparing a substrate on which a predetermined light-shielding pattern having light-shielding properties is formed;
A film forming step of forming a metal layer provided with the through holes in a predetermined pattern on the substrate;
Separating the metal layer from the substrate, and
The film forming step includes
Providing a resist film containing a photocurable resin on the surface of the substrate on which the light-shielding pattern is formed;
An exposure step of exposing the resist film by irradiating the resist film with light incident on the substrate from a side opposite to the side of the substrate on which the resist film is provided;
Developing the resist film to form a resist pattern having a gap formed on the light-shielding pattern; and
A plating process for depositing the metal layer on the light-shielding pattern in the gaps of the resist pattern. The light-shielding pattern formed on the substrate is a conductive pattern having a light-shielding property and conductivity,
The deposition mask manufacturing method according to claim 11, wherein the plating process of the film forming process includes an electrolytic plating process of depositing the metal layer on the conductive pattern by passing an electric current through the conductive pattern. .   A portion of the through hole located on the first surface of the vapor deposition mask is referred to as a first opening, and a portion of the through hole located on the second surface of the vapor deposition mask is referred to as a second opening. The vapor deposition mask according to claim 11 or 12, wherein each of the first opening and the second opening of the metal layer has a contour formed by joining a plurality of linear portions. Production method. A vapor deposition mask in which a plurality of through holes extending from the first surface to the second surface are formed,
Comprising a metal layer in which the through holes are formed in a predetermined pattern;
When the portion of the through hole located on the first surface is referred to as a first opening, and the portion of the through hole located on the second surface is referred to as a second opening, the through hole is When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the outline of the second opening is configured to surround the outline of the first opening,
The outline of the first opening and the outline of the second opening are both formed by joining a plurality of linear portions,
When the vapor deposition mask is viewed along the normal direction of the vapor deposition mask, the coupling portion where the two linear portions adjacent to the first opening portion are connected to each other, and the two adjacent apertures of the second opening portion are connected. The shortest distance between the connecting portion to which the linear portion is connected is a distance between an intermediate point of the linear portion of the first opening and an intermediate point of the linear portion of the second opening. The evaporation mask is also getting smaller.   The outline of the said 1st opening part and the outline of the said 2nd opening part are both the polygonal shapes formed by combining several linear said linear parts, The vapor deposition of Claim 14 mask.   The deposition mask according to claim 14, wherein a contour of the first opening and a contour of the second opening include the curved linear portion.

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