JP2017141500A - Vapor deposition mask, and production of vapor deposition mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a vapor deposition mask device having a vapor deposition mask to be properly welded to a frame.SOLUTION: A vapor deposition mask device manufacturing method comprises: a preparation step of preparing a vapor deposition mask having a plurality through holes leading from a first face to a second face; and a welding step of welding the welding mask to a frame. The welding step includes an arranging step of arranging the vapor deposition mask over the frame so that the second face may face the frame, and arranging a metal piece at a portion overlapping the frame, in the case where the evaporation mask is observed along the normal direction of the first face in the first face of the evaporation mask.SELECTED DRAWING: Figure 12A

Description

  The present invention relates to a vapor deposition mask apparatus including a vapor deposition mask in which a plurality of through holes are formed and a frame that supports the vapor deposition mask, and a method for manufacturing the vapor deposition mask apparatus.

  In recent years, a display device used in a portable device such as a smartphone or a tablet PC is required to have high definition, for example, a pixel density of 400 ppi or more. In portable devices, there is an increasing demand for compatibility with ultra full high vision, and in this case, the pixel density of the display device is required to be, for example, 800 ppi or more.

  Among display devices, organic EL display devices have attracted attention because of their excellent responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels with a desired pattern using a vapor deposition mask in which through holes arranged in a desired pattern are formed is known. Specifically, first, a deposition mask is brought into intimate contact with a substrate for an organic EL display device, and then the deposited deposition mask and the substrate are both put into a deposition apparatus to deposit an organic material on the substrate. I do. In this case, in order to precisely manufacture an organic EL display device having a high pixel density, it is required to accurately reproduce the position and shape of the through hole of the vapor deposition mask according to the design.

  As a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate. Next, a region of the first surface of the metal plate that is not covered with the first resist pattern is etched to form a first opening in the first surface of the metal plate. Thereafter, a region of the second surface of the metal plate that is not covered with the second resist pattern is etched to form a second opening in the second surface of the metal plate. At this time, by performing etching so that the first opening and the second opening communicate with each other, a through-hole penetrating the metal plate can be formed. The metal plate for producing the vapor deposition mask is obtained, for example, by rolling a base material such as an iron alloy.

  In addition, as a method for manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 2, a method for manufacturing a vapor deposition mask using a plating process is known. For example, in the method described in Patent Document 2, first, a conductive substrate is prepared. Next, a resist pattern is formed on the substrate with a predetermined gap. This resist pattern is provided at a position where a through hole of the vapor deposition mask is to be formed. Thereafter, a plating solution is supplied to the gap between the resist patterns, and a metal layer is deposited on the substrate by electrolytic plating. Thereafter, by separating the metal layer from the substrate, it is possible to obtain a vapor deposition mask in which a plurality of through holes are formed.

  A vapor deposition apparatus that performs a vapor deposition process for vapor deposition of a vapor deposition material such as an organic material on a substrate includes a vapor deposition mask apparatus including a vapor deposition mask and a frame that supports the vapor deposition mask. The frame supports the vapor deposition mask in a pulled state so that the vapor deposition mask does not bend. The vapor deposition mask is fixed to the frame by welding.

Japanese Patent No. 5382259 JP 2001-234385 A

  In order to deposit the deposition material on the substrate with a desired pattern with high accuracy, it is preferable that the thickness of the deposition mask is small. By the way, when the vapor deposition mask is heated to weld the vapor deposition mask to the frame, the material is scattered and fluidized, and the thickness of the vapor deposition mask is reduced in the welding region, and holes and recesses are formed in the vapor deposition mask. There is. For this reason, when the thickness of the original vapor deposition mask is small, the vapor deposition mask may be broken during welding, and the strength of the welded region of the vapor deposition mask cannot be secured sufficiently.

  An object of this invention is to provide the vapor deposition mask apparatus which can solve such a subject effectively, and its manufacturing method.

  The present invention is a method for manufacturing a vapor deposition mask device, a preparation step of preparing a vapor deposition mask including a plurality of through holes from the first surface to the second surface, a welding step of welding the vapor deposition mask to a frame, And the welding step includes disposing the vapor deposition mask on the frame such that the second surface faces the frame, and the method of the first surface of the first surface of the vapor deposition mask. It is a manufacturing method of a vapor deposition mask apparatus including the arrangement | positioning process which arrange | positions a metal piece in the part which overlaps with the said frame when the said vapor deposition mask is seen along a linear direction, and the heating process which heats the said metal piece.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the heating step may include an irradiation step of irradiating the metal piece with a laser beam.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the preparation step may include a step of forming the vapor deposition mask by plating.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the preparation step may prepare the vapor deposition mask in which a portion welded to the frame has a thickness of 3 μm or more and 25 μm or less.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the vapor deposition mask, the frame, and the metal piece may all include an iron alloy containing nickel.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the welding step may further include a removal step of removing a part of the metal piece after the heating step.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the metal piece having a thickness of 10 μm or more and 30 μm or less may be used in the placement step of the welding step.

  In the method of manufacturing a vapor deposition mask device according to the present invention, the metal piece produced by rolling a base material may be used in the arranging step of the welding step.

  In the manufacturing method of the vapor deposition mask apparatus by this invention, you may use the said metal piece produced by the plating process.

  In the present invention, a metal piece is disposed on a portion of the vapor deposition mask that overlaps the frame, and the metal piece is heated to melt the vapor deposition mask and the portion of the frame that overlap the metal piece. Weld to frame. In this case, the amount of the material to be melted on the vapor deposition mask side with respect to the interface between the vapor deposition mask and the frame increases by the amount of the metal piece. For this reason, the thickness of the vapor deposition mask in a welding area | region can fully be ensured. Therefore, it can suppress that the vapor deposition mask breaks. Moreover, the welding strength of a vapor deposition mask can be raised.

It is a figure which shows the vapor deposition apparatus provided with the vapor deposition mask apparatus by one Embodiment of this invention. It is sectional drawing which shows the organic electroluminescence display manufactured using the vapor deposition mask apparatus shown to FIG. 1A. It is a top view which shows the vapor deposition mask apparatus by one Embodiment of this invention. It is a top view which expands and shows the ear | edge part of the vapor deposition mask apparatus shown in FIG. It is a top view which shows one modification of the junction part formed in the ear | edge part of a vapor deposition mask apparatus. It is sectional drawing which looked at the vapor deposition mask apparatus of FIG. 3 from the VV direction. It is a top view which expands and shows the intermediate part of a vapor deposition mask. It is sectional drawing which looked at the intermediate part of FIG. 6 from the VII-VII direction. It is sectional drawing which expands and shows the intermediate part of FIG. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining the subject in the conventional welding process. It is a figure explaining the subject in the conventional welding process. It is a figure which shows an example of the method of measuring the welding strength of a junction part. It is a figure explaining the welding process by one Embodiment of this invention. It is a figure explaining the welding process by one Embodiment of this invention. It is a figure explaining the welding process by one Embodiment of this invention. It is a figure explaining the welding process by one Embodiment of this invention. It is a figure explaining the modification of a welding process. It is a figure explaining the modification of a welding process. It is a figure explaining the modification of the manufacturing method of a vapor deposition mask. It is a figure explaining the modification of the manufacturing method of a vapor deposition mask. It is sectional drawing which shows the modification of a vapor deposition mask.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual product.

  1A to 11D are diagrams for explaining an embodiment of the present invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device will be described as an example. However, the present invention can be applied to a method of manufacturing a vapor deposition mask used for various purposes without being limited to such application.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other only based on the difference in names. For example, the “plate” is a concept including a member that can be called a sheet or a film.

  In addition, “plate surface (sheet surface, film surface)” means a target plate-like member (sheet-like) when the target plate-like (sheet-like, film-like) member is viewed as a whole and globally. It refers to the surface that coincides with the plane direction of the member or film-like member. Moreover, the normal direction used with respect to a plate-like (sheet-like, film-like) member refers to the normal direction with respect to the plate | board surface (sheet surface, film surface) of the said member.

  Further, as used herein, the shape, geometric conditions and physical characteristics and their degree are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, lengths and angles In addition, values of physical characteristics and the like are not limited to a strict meaning and are interpreted to include a range where a similar function can be expected.

(Vapor deposition equipment)
First, the vapor deposition apparatus 90 which performs the vapor deposition process which vapor-deposits a vapor deposition material on a target object is demonstrated with reference to FIG. 1A. As shown in FIG. 1A, the vapor deposition apparatus 90 includes a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask apparatus 10. The crucible 94 contains a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98. The vapor deposition mask device 10 is disposed so as to face the crucible 94.

(Deposition mask device)
Hereinafter, the vapor deposition mask device 10 will be described. As illustrated in FIG. 1A, the vapor deposition mask device 10 includes a vapor deposition mask 20 and a frame 15 that supports the vapor deposition mask 20. The frame 15 supports the vapor deposition mask 20 in a state of being pulled in the surface direction so that the vapor deposition mask 20 is not bent. As shown in FIG. 1A, the vapor deposition mask device 10 is disposed in the vapor deposition device 90 so that the vapor deposition mask 20 faces a substrate, for example, an organic EL substrate 92, to which the vapor deposition material 98 is attached. In the following description, among the surfaces of the vapor deposition mask 20, the surface on the organic EL substrate 92 side is referred to as a first surface 20a, and the surface located on the opposite side of the first surface 20a is referred to as a second surface 20b.

  As shown in FIG. 1A, the vapor deposition mask device 10 may include a magnet 93 disposed on the surface of the organic EL substrate 92 opposite to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 can be brought close to the organic EL substrate 92 by attracting the vapor deposition mask 20 to the magnet 93 side by magnetic force.

  FIG. 2 is a plan view showing the case where the vapor deposition mask device 10 is viewed from the first surface 20 a side of the vapor deposition mask 20. As shown in FIG. 2, the vapor deposition mask device 10 includes a plurality of vapor deposition masks 20 having a substantially rectangular shape in plan view, and each vapor deposition mask 20 is at a pair of end portions 20 e in the longitudinal direction of the vapor deposition mask 20. The frame 15 is fixed.

  The vapor deposition mask 20 includes a plurality of through holes 25 that penetrate the vapor deposition mask 20. The vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the through hole 25 of the vapor deposition mask 20. Thereby, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  FIG. 1B is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of FIG. 1A. The organic EL display device 100 includes an organic EL substrate 92 and pixels including a vapor deposition material 98 provided in a pattern.

  In the case where it is desired to perform color display with a plurality of colors, the vapor deposition apparatuses 90 each equipped with the vapor deposition mask 20 corresponding to each color are prepared, and the organic EL substrate 92 is sequentially put into each vapor deposition apparatus 90. Thereby, for example, an organic light emitting material for red, an organic light emitting material for green, and an organic light emitting material for blue can be sequentially deposited on the organic EL substrate 92.

  By the way, a vapor deposition process may be implemented inside the vapor deposition apparatus 90 used as a high temperature atmosphere. In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition apparatus 90 are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit dimensional change behavior based on their respective thermal expansion coefficients. In this case, if the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 and the organic EL substrate 92 are greatly different, a positional shift caused by a difference in their dimensional change occurs. As a result, the vapor deposition mask 20 or the frame 15 adheres on the organic EL substrate 92. The dimensional accuracy and position accuracy of the vapor deposition material will decrease.

  In order to solve such a problem, it is preferable that the thermal expansion coefficients of the vapor deposition mask 20 and the frame 15 are equal to the thermal expansion coefficient of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the vapor deposition mask 20 and the frame 15. For example, an iron alloy containing 30% by mass or more and 54% by mass or less of nickel can be used as the material of the metal plate constituting the vapor deposition mask 20. Specific examples of the iron alloy containing nickel include an invar material containing nickel of 34% by mass or more and 38% by mass or less, a super invar material containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel, 48 Examples thereof include a low thermal expansion Fe—Ni plating alloy containing nickel in an amount of not less than mass% and not more than 54 mass%.

  In the vapor deposition process, when the temperature of the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 does not reach a high temperature, the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is set as the thermal expansion coefficient of the organic EL substrate 92. There is no need to make the values equivalent. In this case, a material other than the above-described iron alloy may be used as a material constituting the vapor deposition mask 20. For example, an iron alloy other than the above-described iron alloy containing nickel, such as an iron alloy containing chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. Moreover, you may use alloys other than iron alloys, such as nickel and a nickel- cobalt alloy.

(Deposition mask)
Next, the vapor deposition mask 20 will be described in detail. As shown in FIG. 2, the vapor deposition mask 20 includes a pair of ear portions 17 constituting a pair of end portions 20 e in the longitudinal direction of the vapor deposition mask 20 and an intermediate portion 18 positioned between the pair of ear portions 17. I have.

(Ear part)
First, the ear portion 17 will be described in detail. The ear portion 17 is a portion fixed to the frame 15 in the vapor deposition mask 20. In the present embodiment, the ear portion 17 is fixed to the frame 15 by welding on the second surface 20b side. In the following description, a portion of the ear portion 17 and the frame 15 that are joined to each other by welding is referred to as a joint portion 19.

  FIG. 3 is an enlarged plan view showing the ear portion 17 and its peripheral portion of the vapor deposition mask device 10. The joint portion 19 formed on the ear portion 17 includes a welding mark 19a. The welding mark 19 a is a mark formed on the first surface 20 a side of the vapor deposition mask 20 due to welding of the second surface 20 b of the vapor deposition mask 20 to the frame 15. For example, as illustrated in FIG. 3, the joint portion 19 includes a plurality of spot-like welding marks 19 a arranged along the width direction of the vapor deposition mask 20. Such a plurality of spot-like welding marks 19a are formed by, for example, intermittently irradiating the ear portion 17 with a laser beam in a spot shape at each position along the width direction of the vapor deposition mask 20.

  Note that the arrangement and shape of the welding marks 19a in plan view are not particularly limited. For example, as shown in FIG. 4, the welding mark 19 a may extend linearly along the width direction of the vapor deposition mask 20. Such a welding mark 19a is formed by, for example, continuously irradiating the ear portion 17 with a laser beam at each position along the width direction of the vapor deposition mask 20.

  FIG. 5 is a cross-sectional view of the vapor deposition mask device of FIG. 3 as viewed from the VV direction. As shown in FIG. 5, the joint portion 19 has a melting region 19 f including a portion from the first surface 20 a to the second surface 20 b of the ear portion 17 and a part of the frame 15. The melting region 19f is a portion of the ear portion 17 and the frame 15 of the vapor deposition mask 20 that has melted during welding. In the melting region 19f, crystallization of the material occurs when the temperature of the melting region 19f decreases and the melting region 19f solidifies after welding. For example, the melting region 19 f includes crystal grains that straddle the ears 17 and the frame 15.

  In FIG. 5, the organic EL substrate 92 that is in close contact with the vapor deposition mask 20 during the vapor deposition treatment is represented by a dotted line. As shown in FIG. 5, the organic EL substrate 92 may extend to a portion of the vapor deposition mask 20 where the bonding portion 19 is formed.

(Middle part)
Next, the intermediate part 18 will be described. As shown in FIGS. 2, 3, and 5, the intermediate portion 18 includes an effective region 22 in which a through hole 25 extending from the first surface 20 a to the second surface 20 b is formed, and a surrounding region 23 surrounding the effective region 22. ,including. The surrounding region 23 is a region for supporting the effective region 22, and is not a region through which a vapor deposition material intended to be deposited on the organic EL substrate 92 passes. For example, the effective area 22 is an area facing the display area of the organic EL substrate 92 in the vapor deposition mask 20.

  As shown in FIG. 2, the surrounding region 23 has, for example, a substantially rectangular shape in a plan view, and more precisely, a substantially rectangular shape in a plan view. Although not shown, each effective region 22 can have various shapes of contours according to the shape of the display region of the organic EL substrate 92. For example, each effective area 22 may have a circular outline.

  As shown in FIG. 2, the intermediate portion 18 includes a plurality of surrounding regions 23 arranged at predetermined intervals along the longitudinal direction of the vapor deposition mask 20. One effective area 22 corresponds to the display area of one organic EL display device 100. For this reason, according to the vapor deposition mask apparatus 10 shown in FIG. 1, the multi-surface vapor deposition of the organic EL display apparatus 100 is possible.

  Hereinafter, the intermediate part 18 will be described in detail. FIG. 6 is an enlarged plan view showing the intermediate portion 18, and FIG. 7 is a cross-sectional view of the intermediate portion 18 in FIG. 6 viewed from the VII-VII direction. As shown in FIG. 6, the plurality of through holes 25 are regularly arranged at a predetermined pitch along two directions orthogonal to each other in the effective region 22.

  Hereinafter, the shape of the through-hole 25 and its surrounding part will be described in detail. Here, the shape of the through-hole 25 and its surrounding part when the vapor deposition mask 20 is formed by a plating process will be described.

  As shown in FIG. 7, the intermediate portion 18 includes a first metal layer 32 that constitutes the first surface 20a, and a second metal layer 37 that constitutes the second surface 20b. The first metal layer 32 is provided with a first opening 30 in a predetermined pattern, and the second metal layer 37 is provided with a second opening 35 in a predetermined pattern. In the intermediate portion 18, the first opening 30 and the second opening 35 communicate with each other, thereby forming a through hole 25 from the first surface 20 a to the second surface 20 b of the vapor deposition mask 20.

  As shown in FIG. 6, the first opening 30 and the second opening 35 constituting the through hole 25 may have a substantially polygonal shape in plan view. Here, an example is shown in which the first opening 30 and the second opening 35 have a substantially square shape, more specifically, a substantially square shape. Although not shown, the first opening 30 and the second opening 35 may have other substantially polygonal shapes such as a substantially hexagonal shape and a substantially octagonal shape. The “substantially polygonal shape” is a concept including a shape in which corners of a polygon are rounded. Although not shown, the first opening 30 and the second opening 35 may be circular. Moreover, as long as the 2nd opening part 35 has the outline which surrounds the 1st opening part 30 in planar view, the shape of the 1st opening part 30 and the shape of the 2nd opening part 35 do not need to be similar.

  In FIG. 7, reference numeral 41 represents a connection portion where the first metal layer 32 and the second metal layer 37 are connected. Reference sign S <b> 0 represents the dimension of the through hole 25 in the connection portion 41 between the first metal layer 32 and the second metal layer 37. In FIG. 7, an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other is shown. However, the present invention is not limited to this, and the gap between the first metal layer 32 and the second metal layer 37 is shown. Other layers may be interposed between the two layers. For example, a catalyst layer for promoting precipitation of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.

  FIG. 8 is an enlarged view showing a part of the first metal layer 32 and the second metal layer 37 of FIG. As shown in FIG. 8, the width M2 of the second metal layer 37 on the second surface 20b of the vapor deposition mask 20 is smaller than the width M1 of the first metal layer 32 on the first surface 20a of the vapor deposition mask 20. In other words, the opening dimension S2 of the through hole 25 (second opening 35) in the second surface 20b is larger than the opening dimension S1 of the through hole 25 (first opening 30) in the first surface 20a. Hereinafter, advantages of configuring the first metal layer 32 and the second metal layer 37 in this way will be described.

  The vapor deposition material 98 flying from the second surface 20 b side of the vapor deposition mask 20 adheres to the organic EL substrate 92 through the second opening 35 and the first opening 30 of the through hole 25 in order. A region of the organic EL substrate 92 to which the vapor deposition material 98 adheres is mainly determined by the opening size S1 and the opening shape of the through hole 25 in the first surface 20a. 7 and 8, the vapor deposition material 98 is directed from the crucible 94 toward the organic EL substrate 92 in the normal direction N of the vapor deposition mask 20 as indicated by an arrow L1 from the second surface 20b side to the first surface 20a. In addition to the movement along the normal direction N of the vapor deposition mask 20, the movement may occur in a direction greatly inclined. Here, assuming that the opening dimension S2 of the through hole 25 in the second surface 20b is the same as the opening dimension S1 of the through hole 25 in the first surface 20a, it is greatly inclined with respect to the normal direction N of the vapor deposition mask 20. Most of the vapor deposition material 98 moving in the direction reaches the wall surface 36 of the second opening 35 of the through hole 25 and adheres before reaching the organic EL substrate 92 through the through hole 25. Therefore, in order to increase the utilization efficiency of the vapor deposition material 98, it can be said that it is preferable to increase the opening dimension S2 of the second opening 35, that is, to reduce the width M2 of the second metal layer 37.

  In FIG. 7, the minimum angle formed by the straight line L1 in contact with the wall surface 36 of the second metal layer 37 and the wall surface 31 of the second metal layer 37 with respect to the normal direction N of the vapor deposition mask 20 is represented by reference sign θ1. . In order to make the vapor deposition material 98 moving obliquely reach the organic EL substrate 92 as much as possible, it is advantageous to increase the angle θ1. For example, the angle θ1 is preferably set to 45 ° or more.

  In order to increase the angle θ1, it is effective to make the width M2 of the second metal layer 37 smaller than the width M1 of the first metal layer 32. As is clear from the figure, it is also effective to reduce the thickness T1 of the first metal layer 32 and the thickness T2 of the second metal layer 37 in increasing the angle θ1. Note that if the width M2 of the second metal layer 37, the thickness T1 of the first metal layer 32, and the thickness T2 of the second metal layer 37 are excessively reduced, the strength of the vapor deposition mask 20 is lowered, and therefore, during transportation. It is conceivable that the vapor deposition mask 20 is damaged during use. For example, it is conceivable that the vapor deposition mask 20 is damaged due to the tensile stress applied to the vapor deposition mask 20 when the vapor deposition mask 20 is stretched on the frame 15. Considering these points, it can be said that the dimensions of the first metal layer 32 and the second metal layer 37 are preferably set in the following ranges. Thereby, the above-mentioned angle θ1 can be set to 45 ° or more, for example.

The width M1 of the first metal layer 32 is not less than 5 μm and not more than 25 μm. The width M2 of the second metal layer 37 is not less than 2 μm and not more than 20 μm. 50 μm or less, more preferably 3 μm or more and 30 μm or less, more preferably 3 μm or more and 25 μm or less ・ The thickness T1 of the first metal layer 32: 5 μm or less ・ The thickness T2 of the second metal layer 37: 2 μm or more and 50 μm or less, more preferably Is 3 μm or more and 50 μm or less, more preferably 3 μm or more and 30 μm or less, and further preferably 3 μm or more and 25 μm or less. In this embodiment, the thickness T0 of the vapor deposition mask 20 is equal to any of the ear portion 17 and the intermediate portion 18. Is the same.

  The above-described opening dimensions S0, S1, and S2 are appropriately set in consideration of the pixel density of the organic EL display device and the desired value of the above-described angle θ1. For example, when an organic EL display device having a pixel density of 400 ppi or more is manufactured, the opening dimension S0 of the through hole 25 in the connection portion 41 can be set to 15 μm or more and 60 μm or less. Further, the opening dimension S1 of the first opening 30 on the first surface 20a is set to 10 μm or more and 50 μm or less, and the opening dimension S2 of the second opening 35 on the second surface 20b is set to 15 μm or more and 60 μm or less. Can be done.

  As shown in FIG. 8, a recess 34 may be formed on the first surface 20 a of the vapor deposition mask 20 constituted by the first metal layer 32. The recess 34 is formed corresponding to a conductive pattern 52 of the pattern substrate 50 described later when the vapor deposition mask 20 is manufactured by plating. The depth D of the recess 34 is, for example, not less than 50 nm and not more than 500 nm. Preferably, the outer edge 34 e of the recess 34 formed in the first metal layer 32 is located between the end 33 of the first metal layer 32 and the connection portion 41.

  Next, a method for manufacturing the vapor deposition mask device 10 will be described. First, a method for manufacturing the vapor deposition mask 20 of the vapor deposition mask apparatus 10 will be described. Here, the example which manufactures the vapor deposition mask 20 by a plating process is demonstrated.

(Method for manufacturing vapor deposition mask)
9A to 9D are diagrams illustrating a method for manufacturing the vapor deposition mask 20.

[Pattern substrate preparation process]
First, a pattern substrate 50 shown in FIG. 9A is prepared. The pattern substrate 50 includes a base material 51 having insulating properties and a conductive pattern 52 formed on the base material 51. The conductive pattern 52 has a pattern corresponding to the first metal layer 32.

  As long as it has insulation and appropriate strength, the material constituting the substrate 51 and the thickness of the substrate 51 are not particularly limited. For example, glass, synthetic resin, or the like can be used as a material constituting the substrate 51.

  As a material constituting the conductive pattern 52, a conductive material such as a metal material or an oxide conductive material is appropriately used. Examples of the metal material include chrome and copper. The thickness of the conductive pattern 52 is, for example, 50 nm or more and 500 nm or less.

  In addition, in order to facilitate the later-described separation process for separating the vapor deposition mask 20 from the pattern substrate 50, the pattern substrate 50 may be subjected to a mold release process.

  For example, first, a degreasing process for removing oil on the surface of the pattern substrate 50 is performed. For example, oil on the surface of the conductive pattern 52 of the pattern substrate 50 is removed using an acidic degreasing solution.

  Next, an activation process for activating the surface of the conductive pattern 52 is performed. For example, the same acidic solution as the acidic solution contained in the first plating solution used in the first plating process described later is brought into contact with the surface of the conductive pattern 52. For example, when the first plating solution contains nickel sulfamate, the sulfamic acid is brought into contact with the surface of the conductive pattern 52.

  Next, an organic film forming process for forming an organic film on the surface of the conductive pattern 52 is performed. For example, a release agent containing an organic substance is brought into contact with the surface of the conductive pattern 52. At this time, the thickness of the organic film is set so thin that the electrical resistance of the organic film does not hinder the deposition of the first metal layer 32 by electrolytic plating. The mold release agent may contain a sulfur component.

  In addition, after the degreasing process, the activation process, and the organic film forming process, a water washing process for washing the pattern substrate 50 with water is performed.

[First plating process]
Next, a first plating process is performed in which the first plating solution is supplied onto the substrate 51 on which the conductive pattern 52 is formed to deposit the first metal layer 32 on the conductive pattern 52. For example, the base material 51 on which the conductive pattern 52 is formed is immersed in a plating tank filled with the first plating solution. As a result, as shown in FIG. 9B, the first metal layer 32 in which the first openings 30 are provided in a predetermined pattern on the pattern substrate 50 can be obtained.

  Note that, as shown in FIG. 9B, the first metal layer 32 is not only a portion overlapping the conductive pattern 52 when viewed along the normal direction of the base material 51 due to the characteristics of the plating process. It can also be formed in a portion that does not overlap with 52. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping the end portion 54 of the conductive pattern 52. As a result, as shown in FIG. 9B, the end portion 33 of the first opening 30 may be located at a portion that does not overlap the conductive pattern 52 when viewed along the normal direction of the base material 51. . Further, the above-described depression 34 corresponding to the thickness of the conductive pattern 52 is formed on the surface of the first metal layer 32 on the side in contact with the conductive pattern 52.

  In FIG. 9B, the width of the portion of the first metal layer 32 that does not overlap with the conductive pattern 52 (that is, the portion where the recess 34 is not formed) is represented by the symbol w. The width w is, for example, not less than 0.5 μm and not more than 5.0 μm. The dimension of the conductive pattern 52 is set in consideration of the width w.

  As long as the first metal layer 32 can be deposited on the conductive pattern 52, the specific method of the first plating process is not particularly limited. For example, the first plating process may be performed as a so-called electrolytic plating process in which the first metal layer 32 is deposited on the conductive pattern 52 by passing a current through the conductive pattern 52. Alternatively, the first plating process may be an electroless plating process. When the first plating process is an electroless plating process, an appropriate catalyst layer may be provided on the conductive pattern 52. Alternatively, the conductive pattern 52 may be configured to function as a catalyst layer. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the conductive pattern 52.

  The components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is made of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. Various additives may be contained in the plating solution. As additives, pH buffers such as boric acid, primary brighteners such as saccharin sodium, secondary brighteners such as butynediol, propargyl alcohol, coumarin, formalin, and thiourea, and antioxidants can be used. . The primary brightener may contain a sulfur component.

[Resist formation process]
Next, a resist formation step is performed in which a resist pattern 55 is formed on the base material 51 and the first metal layer 32 with a predetermined gap 56 therebetween. FIG. 9C is a cross-sectional view showing a resist pattern 55 formed on the substrate 51. As shown in FIG. 9C, in the resist formation step, the first opening 30 of the first metal layer 32 is covered with the resist pattern 55, and the gap 56 of the resist pattern 55 is positioned on the first metal layer 32. To be implemented.

  Hereinafter, an example of the resist forming process will be described. First, a negative resist film is formed by attaching a dry film on the substrate 51 and the first metal layer 32. The dry film is a film that is attached to an object in order to form a resist film on the object such as the substrate 51. The dry film includes at least a base film made of PET or the like and a photosensitive layer laminated on the base film and having photosensitivity. The photosensitive layer includes a photosensitive material such as an acrylic photocurable resin, an epoxy resin, a polyimide resin, or a styrene resin. Note that a resist film may be formed by applying a material for the resist pattern 55 on the substrate 51 and then performing baking as necessary.

  Next, an exposure mask that prevents light from being transmitted to a region that should become the gap 56 in the resist film is prepared, and the exposure mask is disposed on the resist film. Thereafter, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. Thereafter, the resist film is exposed through an exposure mask. Further, the resist film is developed to form an image on the exposed resist film. As described above, as shown in FIG. 9C, the resist pattern 55 that provides the gap 56 located on the first metal layer 32 and covers the first opening 30 of the first metal layer 32 can be formed. . In addition, in order to make the resist pattern 55 adhere more firmly with respect to the base material 51 and the 1st metal layer 32, you may implement the heat processing process which heats the resist pattern 55 after a image development process.

  Note that a positive type resist film may be used. In this case, an exposure mask in which light is transmitted through a region to be removed of the resist film is used as the exposure mask.

[Second plating process]
Next, a second plating process is performed in which the second plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32. For example, the base material 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with the second plating solution. As a result, as shown in FIG. 9D, the second metal layer 37 can be formed on the first metal layer 32.

  As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating process is not particularly limited. For example, the second plating process may be performed as a so-called electrolytic plating process in which the second metal layer 37 is deposited on the first metal layer 32 by passing a current through the first metal layer 32. Alternatively, the second plating process may be an electroless plating process. If the second plating process is an electroless plating process, an appropriate catalyst layer may be provided on the first metal layer 32. Even when the electrolytic plating treatment step is performed, a catalyst layer may be provided on the first metal layer 32.

  As the second plating solution, the same plating solution as the first plating solution described above may be used. Alternatively, a plating solution different from the first plating solution may be used as the second plating solution. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal constituting the first metal layer 32 and the composition of the metal constituting the second metal layer 37 are also the same.

  9D shows an example in which the second plating process is continued until the upper surface of the resist pattern 55 and the upper surface of the second metal layer 37 coincide with each other. However, the present invention is not limited to this. . The second plating process may be stopped with the upper surface of the second metal layer 37 positioned below the upper surface of the resist pattern 55.

[Removal process]
Thereafter, a removing process for removing the resist pattern 55 is performed. For example, the resist pattern 55 can be peeled from the substrate 51, the first metal layer 32, and the second metal layer 37 by using an alkaline stripping solution.

[Separation process]
Next, a separation step of separating the combination of the first metal layer 32 and the second metal layer 37 from the base material 51 is performed. Thus, the first metal layer 32 provided with the first opening 30 in a predetermined pattern and the second metal layer 37 provided with the second opening 35 communicating with the first opening 30 were provided. The vapor deposition mask 20 can be obtained.

Hereinafter, an example of the separation step will be described in detail. First, a film in which an adhesive substance is provided by coating or the like is attached to a combination of the first metal layer 32 and the second metal layer 37 formed on the substrate 51. Next, by pulling up or winding up the film, the film is pulled away from the base material 51, thereby separating the combination of the first metal layer 32 and the second metal layer 37 from the base material 51 of the pattern substrate 50. . Thereafter, the film is peeled off from the combination of the first metal layer 32 and the second metal layer 37.
In addition, in the separation step, first, a gap for triggering separation is formed between the combination of the first metal layer 32 and the second metal layer 37 and the base material 51, and then, in this gap. Air may be blown to facilitate the separation process.

  Note that as the substance having adhesiveness, a substance that loses adhesiveness when irradiated with light such as UV or when heated may be used. In this case, after separating the combination of the first metal layer 32 and the second metal layer 37 from the base material 51, a step of irradiating the film with light and a step of heating the film are performed. Thereby, the process of peeling the film from the combination of the first metal layer 32 and the second metal layer 37 can be facilitated. For example, the film can be peeled off in a state in which the film and the combination of the first metal layer 32 and the second metal layer 37 are maintained in parallel with each other as much as possible. Accordingly, it is possible to prevent the combined body of the first metal layer 32 and the second metal layer 37 from being curved when the film is peeled off. This causes the deposition mask 20 to be deformed such as curved. This can be suppressed.

(Deposition mask welding process)
Next, a welding process for welding the vapor deposition mask 20 obtained as described above to the frame 15 is performed. Thereby, the vapor deposition mask apparatus 10 provided with the vapor deposition mask 20 and the flame | frame 15 can be obtained.

(Conventional welding process)
By the way, when the present inventors have made intensive studies, the vapor deposition mask 20 manufactured by plating treatment is applied to the vapor deposition mask 20 manufactured by etching a metal plate obtained by rolling to form a through hole. In comparison, it has been found that the welding strength of the joint 19 is lowered. Hereinafter, the phenomenon observed when the vapor deposition mask 20 manufactured by the plating process is welded to the frame 15 will be described with reference to FIGS. 10A and 10B.

  First, as illustrated in FIG. 10A, the vapor deposition mask 20 was disposed on the frame 15 so that the second surface 20 b of the ear portion 17 faces the frame 15. Next, as shown in FIG. 10A, the ear portion 17 was irradiated with laser light L from the first surface 20 a side to heat a part of the ear portion 17. In FIG. 10A, the symbol S represents the spot diameter of the laser light L irradiated to the ear portion 17. The spot diameter S is, for example, 100 μm or more and 300 μm or less.

  When the ear portion 17 was heated, as shown in FIG. 10B, the ear portion 17 and the frame 15 were melted, and a melting region 19 f straddling the ear portion 17 and the frame 15 was formed. Thereafter, the ear 17 of the vapor deposition mask 20 was fixed to the frame 15 as the temperature of the melting region 19 f decreased and the melting region 19 f solidified. When the thickness T (see FIG. 5) of the frame 15 is large, the molten region 19f does not extend to the surface located on the opposite side of the surface of the frame 15 that is bonded to the vapor deposition mask 20. The thickness T of the frame 15 is, for example, 5 mm or more and 30 mm or less.

As shown in FIG. 10B, the welding mark 19a formed on the first surface 20a of the ear portion 17 by welding the ear portion 17 to the frame 15 includes a concave portion 19c and a convex portion 19b.
The recess 19c is a portion that is recessed toward the second surface 20b. The concave portion 19c was formed in the vicinity of the boundary between the portion of the ear portion 17 that was irradiated with the laser light L and the portion that was not irradiated with the laser light L. In other words, the recess 19c was formed in the vicinity of the outer edge of the laser beam L represented by the spot diameter S.
The convex portion 19b is a portion protruding upward from the first surface 20a. The convex part 19b was formed in the center side of the welding mark 19a rather than the recessed part 19c.

  As shown in FIG. 10B, in the portion of the ear portion 17 where the concave portion 19c is formed on the first surface 20a, the thickness T0 of the ear portion 17 is reduced by the depth of the concave portion 19c, and the welded portion 19 is welded. Strength decreases. Moreover, the thickness T0 of the ear | edge part 17 of the vapor deposition mask 20 manufactured by the plating process is generally smaller than the thickness T0 of the ear | edge part 17 of the vapor deposition mask 20 manufactured through rolling. For this reason, the welding strength of the joint portion 19 of the vapor deposition mask 20 manufactured by the plating process is greatly affected by the concave portion 19c. As a result, it is considered that the vapor deposition mask 20 manufactured by plating treatment has a lower welding strength of the joint portion 19 than the vapor deposition mask 20 manufactured through rolling.

  The welding strength is the magnitude of the force required to peel off the ear portion 17 of the vapor deposition mask 20 welded to the frame 15 by the joint portion 19 from the frame 15. FIG. 11 shows an example of a method for measuring the welding strength of the joint 19. In the measurement process of the welding strength, first, a sample 17S obtained by cutting out a part of the ear portion 17 of the vapor deposition mask 20 is welded to the frame 15. Next, as shown in FIG. 11, a tensile force E in the direction along the normal direction of the frame 15 is applied to the end of the sample 11 </ b> S in the longitudinal direction. In this case, the tensile force E when the sample 17S is broken or the sample 17S is peeled off from the frame 15 is the welding strength of the joint portion 19.

Hereinafter, the reason why the above-described convex portions 19b and concave portions 19c are formed on the welding marks 19a in the vapor deposition mask 20 manufactured by plating will be considered. When the vapor deposition mask 20 is manufactured by plating, stress caused by strain generated in the process of forming a layer by precipitation is generated inside the vapor deposition mask 20. Thereafter, when the melted region 19f is formed by heating the vapor deposition mask 20 during welding, the internal stress is relaxed. Here, in the laser beam L, the intensity of the center part of the spot diameter is usually higher than the intensity of the outer edge part of the spot diameter. For example, the laser beam L has an intensity distribution close to a Gaussian distribution. For this reason, the relaxation of the internal stress in the melting region 19f is more likely to proceed in the central portion of the melting region 19f than in the peripheral portion of the melting region 19f. As a result, as indicated by an arrow F in FIG. 10A, the material flows from the peripheral portion toward the central portion in the melting region 19f, and as a result, it is considered that the convex portion 19b and the concave portion 19c are formed.
In addition, the reason why the above-described convex portion 19b and concave portion 19c are formed is not limited to the above-described reason.

(Welding process according to this embodiment)
In order to solve the above-described problems in the conventional welding process, in the present embodiment, it is proposed to perform the welding process using the metal piece 60. Hereinafter, the welding process according to the present embodiment will be described with reference to FIGS. 12A to 12D.

[Placement process]
First, as shown in FIG. 12A, the ears 17 of the vapor deposition mask 20 are arranged on the frame 15 so that the second surface 20 b faces the frame 15. Next, when the vapor deposition mask 20 is viewed along the normal direction of the first surface 20 a of the first surface 20 a of the ear portion 17 of the vapor deposition mask 20, the metal piece 60 is disposed. In addition, after the metal piece 60 is disposed on the ear portion 17, the ear portion 17 may be disposed on the frame 15.

  The metal piece 60 is a member that melts at least partially together with the ear 17 when the ear 17 is welded to the frame 15. The metal piece 60 preferably includes a material equivalent to the material constituting the ear portion 17. For example, when the ear portion 17 is made of an iron alloy containing nickel, the metal piece 60 is also preferably made of an iron alloy containing nickel.

  As shown in FIG. 12A, the metal piece 60 has at least a dimension larger than the spot diameter S of the laser beam L used in the welding process in the direction in which the first surface 20a of the vapor deposition mask 20 extends. The thickness T3 of the metal piece 60 is preferably 10 μm or more, more preferably 13 μm or more, and further preferably 18 μm or more, as supported by the examples described later, in order to ensure sufficient welding strength. is there.

  As shown in FIG. 12A, the metal piece 60 includes a peripheral portion 62 that constitutes an end portion of the metal piece 60, and a central portion 61 that is surrounded by the peripheral portion 62. For example, the central portion 61 is a portion of the metal piece 60 that melts when irradiated with the laser light L.

  The metal piece 60 is obtained, for example, by cutting a metal plate obtained by rolling a base material such as an iron alloy with a desired dimension. Further, the metal piece 60 may be a member obtained by cutting out a film obtained by plating treatment with a desired dimension. Preferably, the concentration of the sulfur component contained in the metal piece 60 is lower than the concentration of the sulfur component contained in the ear portion 17 of the vapor deposition mask 20.

[Heating process]
Next, a heating step for heating the metal piece 60 is performed. For example, as shown in FIG. 12A, an irradiation step of irradiating the metal piece 60 with the laser light L is performed. Thereby, as shown in FIG. 12B, the central portion 61 of the metal piece 60, a part of the ear part 17 of the vapor deposition mask 20 and a part of the frame 15 are melted, and a melting region 19 f straddling the ear part 17 and the frame 15. Is formed. At this time, the central portion 61 of the metal piece 60 is integrated with the ear portion 17 of the vapor deposition mask 20.

  In the heating step, as shown in FIG. 12B, the upper surface of the metal piece 60 is formed with a convex portion 19b and a concave portion 19c as in the case of the first surface 20a of the vapor deposition mask 20 shown in FIG. 10B. is there. The convex portions 19b and the concave portions 19c are easily formed when using the metal piece 60 obtained by cutting out a film obtained by plating. The concave portion 19 c is formed, for example, at a boundary portion between the central portion 61 and the peripheral portion 62 of the metal piece 60.

  As the laser light L, for example, YAG laser light generated by a YAG laser device can be used. As the YAG laser device, for example, a YAG (yttrium, aluminum, garnet) added with Nd (neodymium) crystal as an oscillation medium can be used. In this case, laser light having a wavelength of about 1064 nm is generated as the fundamental wave. Further, by passing the fundamental wave through the nonlinear optical crystal, a second harmonic having a wavelength of about 532 nm is generated. Further, by passing the fundamental wave and the second harmonic through the nonlinear optical crystal, a third harmonic having a wavelength of about 355 nm is generated.

  The third harmonic of the YAG laser beam is easily absorbed by the iron alloy containing nickel. Therefore, when the metal piece 60 includes an iron alloy containing nickel, it is preferable that the laser light L applied to the metal piece 60 includes the third harmonic of the YAG laser light.

[Removal process]
Next, a removal process for removing a part of the metal piece 60 is performed. For example, as shown in FIG. 12C, the peripheral edge 62 of the metal piece 60 is removed. Thus, the vapor deposition mask apparatus 10 provided with the flame | frame 15 and the vapor deposition mask 20 joined to the flame | frame 15 by the junction part 19 can be obtained.

  Note that if the thickness T3 of the metal piece 60 becomes too large, the ear portion 17 may be peeled off from the frame 15 at the same time when the peripheral portion 62 of the metal piece 60 is pulled to separate the peripheral portion 62 from the joint portion 19. Is done. Considering this point, the thickness T3 of the metal piece 60 is preferably 30 μm or less, more preferably 28 μm or less, and even more preferably 23 μm or less, as supported by the examples described later.

  According to the present embodiment, the metal piece 60 is arranged on the ear 17 and the welding process is performed, so that the metal 17 is melted on the ear 17 side of the interface between the ear 17 and the frame 15 of the vapor deposition mask 20. The amount of material can be increased by the amount of the metal piece 60. For this reason, even if it is a case where material scattering and a flow arise in the welding process, the thickness T0 of the ear | edge part 17 in the junction part 19 can fully be ensured over the whole region of the junction part 19. FIG. Thus, even when the thickness T0 of the ear portion 17 before the welding process is small, the ear portion 17 can be prevented from being broken after the welding process, and the joint portion The welding strength of 19 can be increased.

  In addition, according to the present embodiment, by appropriately setting the thickness T3 of the metal piece 60, even when the recess 19c is formed on the upper surface of the metal piece 60 as shown in FIG. However, it can prevent reaching to the same horizontal plane as the 1st surface 20a in the part in which the junction part 19 is not formed among the ear | edge parts 17. FIG. As a result, as shown in FIG. 12C, it is possible to prevent the concave portion 19 c from being formed on the surface of the joint portion 19 after the peripheral portion 62 of the metal piece 60 is removed. In this case, the convex portion 19b monotonously decreases in height toward the outer edge of the joint portion 19 and is connected to the first surface 20a in the portion of the ear portion 17 where the joint portion 19 is not formed.

Incidentally, as shown in FIG. 5 described above, the organic EL substrate 92 may extend to a portion of the vapor deposition mask 20 where the bonding portion 19 is formed. In this case, if the convex portion 19b is formed on the surface of the joint portion 19, the convex portion 19b comes into contact with the organic EL substrate 92 when the evaporation mask 20 is brought into close contact with the organic EL substrate 92 and the vapor deposition process is performed. It is conceivable that the surface of the organic EL substrate 92 is damaged.
In addition, a position adjusting process for adjusting the position of the vapor deposition mask 20 in the surface direction of the organic EL substrate 92 may be performed before performing the adhesion process for bringing the vapor deposition mask 20 into close contact with the organic EL substrate 92. In the position adjustment step, for example, the vapor deposition mask 20 is moved along the surface direction of the organic EL substrate 92 with a predetermined gap between the organic EL substrate 92 and the first surface 20a of the vapor deposition mask 20. The position of the vapor deposition mask 20 is adjusted. At this time, it is also conceivable that the convex portion 19 b contacts the organic EL substrate 92 due to an error in position adjustment of the vapor deposition mask 20.

  In consideration of such a problem, after performing the above-described removal step, an additional irradiation step of further irradiating the welding mark 19a of the joint 19 with the laser beam L may be performed as shown in FIG. 12D. When the internal stress in the joint portion 19 has already been alleviated by the irradiation process performed earlier, the laser beam L is further irradiated to the welding mark 19a of the joint portion 19 to cause the material to flow in the joint portion 19. As shown in FIG. 12D, it is expected that the height of the convex portion 19b is reduced. Thereby, it can suppress that the convex part 19b contacts the organic EL board | substrate 92, and the surface of the organic EL board | substrate 92 is damaged. For example, it is possible to suppress damage to wirings and electrodes previously formed on the organic EL substrate 92.

  Further, according to the present embodiment, the concentration of the sulfur component contained in the metal piece 60 is lower than the concentration of the sulfur component contained in the ear portion 17 of the vapor deposition mask 20. For this reason, it is possible to suppress sulfur from segregating at the crystal grain boundaries of the crystal grains generated in the joint portion 19, thereby further increasing the welding strength of the joint portion 19.

  Moreover, according to this Embodiment, the hollow part 34 is formed in the 1st surface 20a of the intermediate part 18 of the vapor deposition mask 20. As shown in FIG. For this reason, even if the position adjustment error of the vapor deposition mask 20 or the deflection of the vapor deposition mask 20 occurs during the position adjustment step of adjusting the position of the vapor deposition mask 20 in the surface direction of the organic EL substrate 92, the organic EL substrate 92 is organic. The area of the vapor deposition mask 20 in contact with the EL substrate 92 can be reduced. This can prevent the surface of the organic EL substrate 92 from being damaged.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Modification of welding process)
In the above-described embodiment, an example in which the welding mark 19a formed by the welding process includes the convex portion 19b formed in the center portion is shown, but the present invention is not limited to this. In this modification, an example will be described in which a welding mark 19a formed by a welding process includes a recess 19c formed in the center portion thereof.

  In this modification, the metal piece 60 produced by rolling the base material of the iron alloy containing nickel is used as the metal piece 60. For this reason, compared with the case where the metal piece 60 obtained by cutting out the film | membrane obtained by the plating process is used, the grade of relaxation of the internal stress which arises in the metal piece 60 in the welding process is small. Therefore, after performing the irradiation process which irradiates the laser beam L to the center part 61 of the metal piece 60, as shown to FIG. 13A, not the convex part but the recessed part 19c is formed in the center part 61 of the metal piece 60. There is. Then, the removal process which removes the peripheral part 62 of the metal piece 60 is implemented. As a result, as shown in FIG. 13B, it is possible to obtain a joint 19 including a welding mark 19a in which a recess 19c is formed at the center thereof.

(Modification of heating process)
In the above-described embodiment, the metal piece 60 is heated by irradiating the metal piece 60 with the laser beam L, and the vapor deposition mask 20 is welded to the frame 15. However, the method of heating the metal piece 60 is not limited to the method of irradiating the laser beam L. For example, the metal piece 60 may be heated by passing a current through the metal piece 60 and the ear 17 and the frame 15 overlapping the metal piece 60.

(First Variation of Manufacturing Method of Evaporation Mask)
In the above-described embodiment, the case where the vapor deposition mask 20 is configured by stacking at least two metal layers of the first metal layer 32 and the second metal layer 37 has been described. However, it is not restricted to this, The vapor deposition mask 20 may be comprised by the one metal layer 27 in which the several through-hole 25 was formed by the predetermined pattern. Hereinafter, an example in which the deposition mask 20 includes one metal layer 27 will be described with reference to FIGS. 14A to 15. In this modification, a portion located on the first surface 20a among the through holes 25 from the first surface 20a to the second surface 20b of the vapor deposition mask 20 is referred to as a first opening 30 and Of these, the portion located on the second surface 20 b is referred to as a second opening 35.

  First, a method for manufacturing the vapor deposition mask 20 according to this modification will be described.

  First, a substrate 51 on which a predetermined conductive pattern 52 is formed is prepared. Next, as shown in FIG. 14A, a resist forming step is performed in which a resist pattern 55 is formed on the substrate 51 with a predetermined gap 56 therebetween. Preferably, the distance between the side surfaces 57 of the resist pattern 55 that defines the gap 56 of the resist pattern 55 becomes narrower as the distance from the base material 51 increases. That is, the resist pattern 55 has a shape in which the width of the resist pattern 55 increases as the distance from the substrate 51 increases, that is, a so-called reverse taper shape.

  An example of a method for forming such a resist pattern 55 will be described. For example, first, a resist film containing a photocurable resin is provided on the surface of the substrate 51 on the side where the conductive pattern 52 is formed. Next, the resist film is exposed by irradiating the resist film with exposure light incident on the base 51 from the side opposite to the side on which the resist film is provided in the base 51. Thereafter, the resist film is developed. In this case, a resist pattern 55 having an inversely tapered shape as shown in FIG. 14A can be obtained based on exposure light wraparound (diffraction).

  Next, as shown in FIG. 14B, a plating process is performed in which a plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the metal layer 27 on the conductive pattern 52. Thereafter, by performing the above-described removal step and separation step, as shown in FIG. 15, the vapor deposition mask 20 including the metal layer 27 provided with the through holes 25 in a predetermined pattern can be obtained.

(Second modification of the manufacturing method of the evaporation mask)
In the above-described embodiment and modification examples, the example in which the vapor deposition mask 20 is manufactured by the plating process has been described. However, the method adopted for producing the vapor deposition mask 20 is not limited to the plating process. For example, as disclosed in Patent Document 1 described above, the vapor deposition mask 20 may be produced by forming the through holes 25 in the metal plate 21 by etching.

(Modified ears)
In the above-described embodiment and modifications, an example in which the thickness of the ear portion 17 of the vapor deposition mask 20 and the thickness of the intermediate portion 18 are the same is shown. However, it is not restricted to this, The thickness of the ear | edge part 17 and the thickness of the intermediate part 18 may differ.

(Modification of metal piece)
In the above-described embodiment and modifications, the example in which the metal piece 60 is a plate-like member extending in parallel with the first surface 20a of the ear portion 17 has been described. However, the shape of the metal piece 60 is not particularly limited as long as the ear part 17 can be welded to the frame 15 by heating the metal piece 60 disposed on the ear part 17. For example, the metal piece 60 may be a linear member having a cross-sectional shape other than a rectangle, for example, a circular cross-sectional shape.

  In addition, although some modified examples with respect to the above-described embodiment have been described, naturally, a plurality of modified examples can be applied in combination as appropriate.

  EXAMPLES Next, although an Example demonstrates this invention further more concretely, this invention is not limited to description of a following example, unless the summary is exceeded.

Example 1
A sample 17S corresponding to the ear 17 of the vapor deposition mask 20 manufactured by the plating process was produced, and then the sample 17S was welded to the frame 15 using the metal piece 60 described above. Thereafter, the welding strength of sample 17S was measured using the method shown in FIG.

  Hereinafter, this embodiment will be described in detail. First, a method for manufacturing Sample 17S will be described. First, a plating solution containing ferrous sulfamate, nickel sulfamate, boric acid, saccharin, and malonic acid was prepared. Next, the temperature of the plating solution was set within a range of 35 ° C. or more and 50 ° C. or less, and an iron alloy film containing nickel was deposited using iron pellets and nickel pellets as an anode. The thickness of the film was 20 μm. The ratio of nickel in the film was in the range of 48 mass% or more and 54 mass% or less. Then, the sample 17S was produced by cutting out a film | membrane into the shape which has length 150mm and width 10mm.

  Next, the welding method will be described. First, a metal piece 60 having a thickness T3 of 13 μm obtained by rolling a base material of an iron alloy containing nickel was prepared. The ratio of nickel in the metal piece 60 was in the range of 34 mass% or more and 38 mass% or less. Next, the sample 17S was placed on the frame 15, and the metal piece 60 was placed on the sample 17S. As the frame 15, a member made of an iron alloy containing nickel in a range of 34% by mass to 36% by mass and having a thickness of 15 mm was used. Then, the joining part 19 was formed by irradiating the laser beam L and heating the metal piece 60, and the sample 17 </ b> S was fixed to the frame 15. The laser beam L included the third harmonic of the YAG laser beam. The spot diameter S of the laser beam L was in the range of 100 μm or more and 300 μm or less. The time for irradiating the metal piece 60 with the laser beam L was 1.5 ms.

  Thereafter, the peripheral edge 62 was separated from the joint 19 by pulling the peripheral edge 62 of the metal piece 60 that was not irradiated with the laser beam L. At this time, the peripheral edge 62 could be separated from the joint 19 without removing the sample 17S from the frame 15.

  Next, the welding strength of Sample 17S was measured using the method shown in FIG. The welding strength of sample 17S was 156 mN.

(Example 2)
The welding strength of sample 17S was measured in the same manner as in Example 1 except that the metal piece 60 having a thickness T3 of 18 μm was used. The weld strength of sample 17S was 206 mN. Further, as in the case of Example 1, the peripheral edge 62 could be separated from the joint 19 without peeling off the sample 17S from the frame 15.

(Example 3)
The welding strength of sample 17S was measured in the same manner as in Example 1 except that the metal piece 60 having a thickness T3 of 23 μm was used. The weld strength of sample 17S was 354 mN. Further, as in the case of Example 1, the peripheral edge 62 could be separated from the joint 19 without peeling off the sample 17S from the frame 15.

Example 4
The welding strength of sample 17S was measured in the same manner as in Example 1 except that the metal piece 60 having a thickness T3 of 28 μm was used. The weld strength of sample 17S was 404 mN. Further, as in the case of Example 1, the peripheral edge 62 could be separated from the joint 19 without peeling off the sample 17S from the frame 15.

(Example 5)
The welding strength of the sample 17S was measured in the same manner as in Example 1 except that the metal piece 60 having a thickness T3 of 15 μm obtained by cutting out the film obtained by the plating treatment was used. The welding strength of sample 17S was 163 mN. Further, as in the case of Example 1, the peripheral edge 62 could be separated from the joint 19 without peeling off the sample 17S from the frame 15.

(Example 6)
The welding strength of sample 17S was measured in the same manner as in Example 1 except that the metal piece 60 having a thickness T3 of 25 μm obtained by cutting out the film obtained by the plating treatment was used. The welding strength of sample 17S was 360 mN. Further, as in the case of Example 1, the peripheral edge 62 could be separated from the joint 19 without peeling off the sample 17S from the frame 15.

(Comparative Example 1)
Sample 17S was welded to frame 15 in the same manner as in Example 1 except that metal piece 60 having a thickness T3 of 33 μm was used. Next, when the peripheral edge portion 62 was pulled to separate the peripheral edge portion 62 from the joint portion 19, the sample 17 </ b> S was peeled off from the frame 15.

(Comparative Example 2)
A metal piece arranged on the sample 17S in the same manner as in Example 1 except that the metal piece 60 having a thickness T3 of 5 μm obtained by cutting out the film obtained by the plating treatment was used. 60 was irradiated with laser light L. As a result, the sample 17S could not be fixed to the frame 15.

  In Examples 1 to 6 described above, a welding strength of 150 mN or more could be ensured. Therefore, the thickness T3 of the metal piece 60 is preferably 10 μm or more, more preferably 13 μm or more, and further preferably 18 μm or more.

  As shown in Comparative Example 1, when the thickness of the metal piece 60 becomes too large, there is a concern that the ear portion 17 may be peeled off from the frame 15 at the same time when the peripheral portion 62 of the metal piece 60 is removed. Accordingly, the thickness T3 of the metal piece 60 is preferably 30 μm or less, more preferably 28 μm or less, and even more preferably 23 μm or less.

DESCRIPTION OF SYMBOLS 10 Deposition mask apparatus 15 Frame 17 Ear part 18 Middle part 19 Joint part 19a Welding mark 19b Convex part 19c Recessed part 19f Melting area 20 Deposition mask 22 Effective area 23 Peripheral area 25 Through-hole 30 1st opening part 31 Wall surface 32 1st metal layer 34 hollow 35 second opening 36 wall 37 second metal layer 41 connection 50 pattern substrate 51 base 52 conductive pattern 60 metal piece 90 vapor deposition device 92 organic EL substrate 98 vapor deposition material

Claims (9)

A method of manufacturing a vapor deposition mask device,
A preparation step of preparing a vapor deposition mask including a plurality of through holes from the first surface to the second surface;
A welding step of welding the vapor deposition mask to a frame,
The welding process includes
The vapor deposition mask is disposed on the frame such that the second surface faces the frame, and the vapor deposition mask along a normal direction of the first surface of the first surface of the vapor deposition mask. An arrangement step of arranging a metal piece in a portion overlapping with the frame when viewing
And a heating step of heating the metal piece.   The said heating process is a manufacturing method of the vapor deposition mask apparatus of Claim 1 including the irradiation process of irradiating the said metal piece with a laser beam.   The said preparation process is a manufacturing method of the vapor deposition mask apparatus of Claim 1 or 2 including the process of forming the said vapor deposition mask by plating process.   The said preparatory process is a manufacturing method of the vapor deposition mask apparatus as described in any one of Claims 1 thru | or 3 which prepares the said vapor deposition mask in which the part welded to the said frame has the thickness of 3 micrometers or more and 25 micrometers or less.   The said vapor deposition mask, the said flame | frame, and the said metal piece are all the manufacturing methods of the vapor deposition mask apparatus as described in any one of the Claims 1 thru | or 4 which have the iron alloy containing nickel.   The said welding process is a manufacturing method of the vapor deposition mask apparatus as described in any one of Claims 1 thru | or 5 which further includes the removal process which removes a part of said metal piece after the said heating process.   The said masking process of the said welding process is a manufacturing method of the vapor deposition mask apparatus as described in any one of the Claims 1 thru | or 6 using the said metal piece which has a thickness of 10 micrometers or more and 30 micrometers or less.   The said arrangement | positioning process of the said welding process is a manufacturing method of the vapor deposition mask apparatus as described in any one of the Claims 1 thru | or 7 using the said metal piece produced by rolling a base material.   The said arrangement | positioning process of the said welding process is a manufacturing method of the vapor deposition mask apparatus as described in any one of Claims 1 thru | or 7 using the said metal piece produced by the plating process.

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