JP6686549B2 - Method for manufacturing vapor deposition mask device and vapor deposition mask device - Google Patents

Description

  The present invention relates to a vapor deposition mask device manufacturing method and a vapor deposition mask device that include a vapor deposition mask having a plurality of through holes and a frame that supports the vapor deposition mask.

  In recent years, display devices used for portable devices such as smartphones and tablet PCs have been required to have high definition, for example, a pixel density of 400 ppi or more. In addition, even in portable devices, there is an increasing demand to support ultra full high-definition, and in this case, the pixel density of the display device is required to be 800 ppi or more, for example.

  Among display devices, organic EL display devices have been attracting attention because of their good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels in a desired pattern by using a vapor deposition mask in which through holes arranged in a desired pattern are formed is known. Specifically, first, a vapor deposition mask is brought into close contact with a substrate for an organic EL display device, and then the vapor deposition mask and the substrate that have been brought into close contact are put into the vapor deposition device, and an organic material is vapor-deposited on the substrate. I do. In this case, in order to accurately manufacture the organic EL display device having a high pixel density, it is required to accurately reproduce the position and shape of the through hole of the vapor deposition mask according to the design.

  As a method of manufacturing a vapor deposition mask, for example, as disclosed in Patent Document 1, a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate. Next, a region of the first surface of the metal plate that is not covered with the first resist pattern is etched to form a first opening in the first surface of the metal plate. Then, a region of the second surface of the metal plate that is not covered with the second resist pattern is etched to form a second opening in the second surface of the metal plate. At this time, a through hole penetrating the metal plate can be formed by performing etching so that the first opening and the second opening communicate with each other. The metal plate for producing the vapor deposition mask is obtained, for example, by rolling a base material such as an iron alloy.

  In addition, as a method of manufacturing a vapor deposition mask, a method of manufacturing a vapor deposition mask using a plating process is known as disclosed in, for example, Patent Document 2. For example, in the method described in Patent Document 2, first, a conductive base material is prepared. Next, a resist pattern is formed on the base material with a predetermined gap. This resist pattern is provided at the position where the through hole of the vapor deposition mask is to be formed. Then, a plating solution is supplied to the gaps between the resist patterns to deposit a metal layer on the base material by electrolytic plating. After that, by separating the metal layer from the base material, a vapor deposition mask having a plurality of through holes can be obtained.

  A vapor deposition apparatus that performs a vapor deposition step of vapor depositing a vapor deposition material such as an organic material includes a vapor deposition mask device including a vapor deposition mask and a frame that supports the vapor deposition mask. The frame supports the vapor deposition mask in a pulled state so that the vapor deposition mask does not bend. The vapor deposition mask is fixed to the frame by welding.

Japanese Patent No. 5382259 JP 2001-234385 A

  In order to accurately deposit the vapor deposition material on the substrate in a desired pattern, it is preferable that the vapor deposition mask has a small thickness. By the way, when the vapor deposition mask is welded to the frame, the material of the heated portion of the vapor deposition mask may scatter or flow, forming a recess in the vapor deposition mask at the welded portion. Therefore, it is considered that the strength of the welded portion of the vapor deposition mask cannot be sufficiently secured. In particular, if the original vapor deposition mask has a small thickness, the strength of this weld may be a problem.

  It is an object of the present invention to provide a vapor deposition mask device manufacturing method and a vapor deposition mask device that can effectively solve such problems.

  The present invention is a method for manufacturing a vapor deposition mask device, comprising a preparatory step of preparing a vapor deposition mask including a plurality of through holes extending from a first surface to a second surface, and a welding step of welding the vapor deposition mask to a frame, In the welding step, the vapor deposition mask is arranged on the frame so that the second surface faces the frame, and the welding mask is arranged along a normal direction of the first surface of the vapor deposition mask. A vapor deposition mask apparatus, comprising: an arranging step of arranging a glass plate on at least a portion of the first surface that overlaps with the frame when looking at the vapor deposition mask; Manufacturing method.

  In the method for manufacturing a vapor deposition mask device according to the present invention, the preparing step may include a step of forming the vapor deposition mask by a plating process.

  In the method for manufacturing a vapor deposition mask device according to the present invention, in the preparing step, the vapor deposition mask may be prepared in which a portion to be welded to the frame has a thickness of 3 μm or more and 25 μm or less.

  In the method for manufacturing a vapor deposition mask device according to the present invention, the welding step may further include a glass plate removing step of removing the glass plate after the irradiation step.

  In the method for manufacturing a vapor deposition mask device according to the present invention, the glass plate may be pressed against the vapor deposition mask in the arranging step of the welding step.

  In the method for manufacturing a vapor deposition mask device according to the present invention, in the irradiation step, there are welding marks from the first surface of the vapor deposition mask to the frame via the second surface, and the vapor deposition mask and the frame are Welding traces may be formed so as to be joined to each other, and the welding traces may include an upper end face formed in a flat shape at a position farthest from the second surface of the vapor deposition mask.

  In the method for manufacturing a vapor deposition mask device according to the present invention, the upper end surface may be formed on an extension of the first surface of the vapor deposition mask.

  Further, the present invention is a vapor deposition mask device, comprising: a vapor deposition mask including a plurality of through holes extending from a first surface to a second surface; a frame facing the second surface of the vapor deposition mask; The welding trace is formed from the first surface to the frame through the second surface, the welding mask joining the vapor deposition mask and the frame to each other, and the welding trace is the most from the second surface of the vapor deposition mask. A vapor deposition mask device including a flat upper end surface at a distant position.

  According to the present invention, the welding strength of the welded portion of the vapor deposition mask can be increased.

It is a figure which shows the vapor deposition apparatus provided with the vapor deposition mask apparatus by one Embodiment of this invention. It is sectional drawing which shows the organic EL display device manufactured using the vapor deposition mask apparatus shown in FIG. 1A. 1 is a plan view showing a vapor deposition mask device according to an embodiment of the present invention. It is a top view which expands and shows the ear | edge part of the vapor deposition mask apparatus shown in FIG. It is a top view showing a modification of a joined part formed in an ear of a vapor deposition mask device. It is sectional drawing which looked at the vapor deposition mask apparatus of FIG. 3 from the VV direction. It is a top view which expands and shows the intermediate part of a vapor deposition mask. FIG. 7 is a cross-sectional view of the intermediate portion of FIG. 6 viewed from the VII-VII direction. It is sectional drawing which expands and shows the intermediate part of FIG. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining an example of the manufacturing method of a vapor deposition mask. It is a figure explaining the subject in the conventional welding process. It is a figure explaining the subject in the conventional welding process. It is a figure which shows an example of the method of measuring the welding strength of a joining part. It is a figure explaining the welding process by one embodiment of the present invention. It is a figure explaining the welding process by one embodiment of the present invention. It is a figure explaining the welding process by one embodiment of the present invention. It is a figure explaining one modification of the manufacturing method of a vapor deposition mask. It is a figure explaining one modification of the manufacturing method of a vapor deposition mask. It is sectional drawing which shows the example of a changed completely type of vapor deposition mask. It is a figure explaining one modification of the welding process shown in Drawing 12B.

  An embodiment of the present invention will be described below with reference to the drawings. In addition, in the drawings attached to the present specification, for convenience of illustration and understanding, the scale, the vertical and horizontal dimension ratios, etc. are appropriately changed and exaggerated from the actual ones.

  1A to 12C are views for explaining an embodiment of the present invention. In the following embodiments and modifications thereof, a method for manufacturing a vapor deposition mask used for patterning an organic material in a desired pattern on a substrate when manufacturing an organic EL display device will be described as an example. However, the present invention is not limited to such an application, and the present invention can be applied to methods for manufacturing vapor deposition masks used for various purposes.

  In the present specification, the terms “plate”, “sheet”, and “film” are not distinguished from each other based only on the difference in designation. For example, a “plate” is a concept that also includes members that can be called sheets and films.

  The term “plate surface (sheet surface, film surface)” means the target plate-shaped member (sheet-shaped member) when the target plate-shaped (sheet-shaped, film-shaped) member is viewed as a whole and comprehensively. (A member, a film-shaped member) refers to a surface that coincides with the plane direction. The normal direction used for the plate-shaped (sheet-shaped, film-shaped) member means the direction normal to the plate surface (sheet surface, film surface) of the member.

  Further, as used in the present specification, the shape and geometrical conditions and physical properties and their degrees are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, length and angle. Also, the values of physical properties, etc. are to be construed including the range to the extent that similar functions can be expected without being bound to a strict meaning.

(Evaporation equipment)
First, a vapor deposition device 90 that performs a vapor deposition process for depositing a vapor deposition material on an object will be described with reference to FIG. 1A. As shown in FIG. 1A, the vapor deposition device 90 includes a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask device 10. The crucible 94 contains a vapor deposition material 98, such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98. The vapor deposition mask device 10 is arranged so as to face the crucible 94.

(Evaporation mask device)
The vapor deposition mask device 10 will be described below. As shown in FIG. 1A, the vapor deposition mask device 10 includes a vapor deposition mask 20 and a frame 15 that supports the vapor deposition mask 20. The frame 15 supports the vapor deposition mask 20 in a pulled state in the surface direction so that the vapor deposition mask 20 does not bend. As shown in FIG. 1A, the vapor deposition mask device 10 is arranged in the vapor deposition device 90 such that the vapor deposition mask 20 faces a substrate, which is an object to which the vapor deposition material 98 is attached, such as an organic EL substrate 92. In the following description, among the surfaces of the vapor deposition mask 20, the surface on the organic EL substrate 92 side is referred to as a first surface 20a, and the surface located on the opposite side of the first surface 20a is referred to as a second surface 20b. Of these, the frame 15 faces the second surface 20b of the vapor deposition mask 20.

  As shown in FIG. 1A, the vapor deposition mask device 10 may include a magnet 93 disposed on the surface of the organic EL substrate 92 opposite to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 can be attracted to the magnet 93 side by magnetic force, and the vapor deposition mask 20 can be brought into close contact with the organic EL substrate 92.

  FIG. 2 is a plan view showing a case where the vapor deposition mask device 10 is viewed from the first surface 20 a side of the vapor deposition mask 20. As shown in FIG. 2, the vapor deposition mask device 10 includes a plurality of vapor deposition masks 20 having a substantially rectangular shape in a plan view, and each vapor deposition mask 20 has a pair of end portions 20 e in the longitudinal direction of the vapor deposition mask 20. , Is fixed to the frame 15.

  The vapor deposition mask 20 includes a plurality of through holes 25 penetrating the vapor deposition mask 20. The vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the through holes 25 of the vapor deposition mask 20. Thereby, the vapor deposition material 98 can be formed into a film on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the vapor deposition mask 20.

  FIG. 1B is a cross-sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of FIG. 1A. The organic EL display device 100 includes an organic EL substrate 92 and pixels that are provided in a pattern and that include a vapor deposition material 98.

  In addition, when it is desired to perform color display with a plurality of colors, the vapor deposition devices 90 equipped with the vapor deposition masks 20 corresponding to the respective colors are prepared, and the organic EL substrate 92 is sequentially loaded into the respective vapor deposition devices 90. Thereby, for example, the organic light emitting material for red, the organic light emitting material for green, and the organic light emitting material for blue can be sequentially deposited on the organic EL substrate 92.

  By the way, the vapor deposition process may be carried out inside the vapor deposition apparatus 90 having a high temperature atmosphere. In this case, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 held inside the vapor deposition device 90 are also heated during the vapor deposition process. At this time, the vapor deposition mask 20, the frame 15, and the organic EL substrate 92 exhibit the behavior of dimensional change based on their respective thermal expansion coefficients. In this case, when the thermal expansion coefficients of the vapor deposition mask 20 or the frame 15 and the organic EL substrate 92 are significantly different from each other, a positional deviation occurs due to the difference in the dimensional changes between them, and as a result, the organic EL substrate 92 adheres to the organic EL substrate 92. The dimensional accuracy and position accuracy of the vapor deposition material will be reduced.

  In order to solve such a problem, it is preferable that the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is equal to the thermal expansion coefficient of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as a main material of the vapor deposition mask 20 and the frame 15. For example, an iron alloy containing nickel in an amount of 30% by mass or more and 54% by mass or less can be used as the material of the metal plate forming the vapor deposition mask 20. Specific examples of the iron alloy containing nickel include Invar material containing 34 mass% or more and 38 mass% or less nickel, Super Invar material containing cobalt in addition to 30 mass% or more and 34 mass% or less nickel, 48 Examples thereof include a low thermal expansion Fe-Ni based plating alloy containing nickel in an amount of not less than 54% by mass and not more than 54% by mass.

  When the vapor deposition mask 20, the frame 15 and the organic EL substrate 92 do not reach a high temperature during the vapor deposition process, the thermal expansion coefficient of the vapor deposition mask 20 and the frame 15 is set to the thermal expansion coefficient of the organic EL substrate 92. There is no particular need to make the values equivalent. In this case, as the material forming the vapor deposition mask 20, a material other than the above-mentioned iron alloy may be used. For example, an iron alloy other than the above-mentioned nickel-containing iron alloy such as an iron alloy containing chromium may be used. As the iron alloy containing chromium, for example, an iron alloy so-called stainless steel can be used. Further, alloys other than iron alloys such as nickel and nickel-cobalt alloys may be used.

(Evaporation mask)
Next, the vapor deposition mask 20 will be described in detail. As shown in FIG. 2, the vapor deposition mask 20 includes a pair of ears 17 that form a pair of end portions 20 e in the longitudinal direction of the vapor deposition mask 20, and an intermediate portion 18 located between the pair of ears 17. I have it.

(Ear)
First, the ear section 17 will be described in detail. The ear portion 17 is a portion of the vapor deposition mask 20 that is fixed to the frame 15. In the present embodiment, the ear portion 17 is fixed to the frame 15 by welding on the second surface 20b side. In the following description, the portions of the ears 17 and the frame 15 that are joined to each other by welding are referred to as joints 19.

  FIG. 3 is an enlarged plan view showing the ear portion 17 of the vapor deposition mask device 10 and its peripheral portion. The joint portion 19 formed on the ear portion 17 includes a welding mark 19a. The welding trace 19a is a trace formed on the vapor deposition mask 20 and a part of the frame 15 due to the second surface 20b of the vapor deposition mask 20 being welded to the frame 15. For example, as shown in FIG. 3, the bonding portion 19 includes a plurality of spot-like welding marks 19 a arranged along the width direction of the vapor deposition mask 20. Such a plurality of spot-shaped welding marks 19a are formed, for example, by intermittently irradiating the ear 17 with laser light in spots at each position along the width direction of the vapor deposition mask 20.

  The arrangement and shape of the welding mark 19a in plan view are not particularly limited. For example, as shown in FIG. 4, the welding mark 19 a may extend linearly along the width direction of the vapor deposition mask 20. Such welding marks 19a are formed, for example, by continuously irradiating the ear portion 17 with laser light linearly at each position along the width direction of the vapor deposition mask 20.

  FIG. 5 is a cross-sectional view of the vapor deposition mask device of FIG. 3 viewed from the VV direction. As shown in FIG. 5, the welding mark 19a reaches the frame 15 from the first surface 20a of the ear portion 17 through the second surface 20b. The welding trace 19a is a portion of the ear portion 17 of the vapor deposition mask 20 and the frame 15 where the portion melted during welding (melting region 19f) is solidified, and extends from the first surface 20a to the second surface 20b of the ear portion 17. It includes a part and a part of the frame 15. The welding mark 19a joins the ear portion 17 of the vapor deposition mask 20 and the frame 15 to each other. In the welding mark 19a, crystallization of the material occurs when the temperature of the melting region 19f is lowered after welding and the melting region 19f is solidified. For example, the welding mark 19a includes crystal grains that extend over the ears 17 and the frame 15.

  As shown in FIG. 12C described later, welding mark 19a according to the present embodiment includes flat upper end surface 19d and recess 19c formed around upper end surface 19d. Here, the upper end surface 19d means a surface formed farthest from the second surface 20b of the vapor deposition mask 20, and more specifically, as shown in FIG. And the surface formed on the uppermost part of the welding mark 19a when the vapor deposition mask 20 is viewed in the upper position. The concave portion 19c is formed around such an upper end surface 19d, and is a portion recessed toward the second surface 20b side from the upper end surface 19d. Details of the upper end surface 19d and the recess 19c will be described later.

  In FIG. 5, the organic EL substrate 92 that comes into close contact with the vapor deposition mask 20 during the vapor deposition process is indicated by a dotted line. As shown in FIG. 5, the organic EL substrate 92 may extend to a portion of the vapor deposition mask 20 where the bonding portion 19 is formed.

(Middle part)
Next, the intermediate section 18 will be described. As shown in FIGS. 2, 3 and 5, the intermediate portion 18 includes an effective region 22 having a through hole 25 extending from the first surface 20a to the second surface 20b, and a peripheral region 23 surrounding the effective region 22. ,including. The peripheral area 23 is an area for supporting the effective area 22, and is not an area through which a vapor deposition material intended to be vapor deposited on the organic EL substrate 92 passes. For example, the effective area 22 is an area of the vapor deposition mask 20 that faces the display area of the organic EL substrate 92.

  As shown in FIG. 2, the peripheral region 23 has, for example, a substantially quadrangular contour in a plan view, and more accurately, a substantially rectangular contour in a plan view. Although not shown, each effective area 22 can have contours of various shapes depending on the shape of the display area of the organic EL substrate 92. For example, each effective area 22 may have a circular contour.

  As shown in FIG. 2, the intermediate portion 18 includes a plurality of peripheral regions 23 arranged at predetermined intervals along the longitudinal direction of the vapor deposition mask 20. One effective area 22 corresponds to the display area of one organic EL display device 100. Therefore, according to the vapor deposition mask device 10 shown in FIG. 1, multifaceted vapor deposition of the organic EL display device 100 is possible.

  Hereinafter, the intermediate portion 18 will be described in detail. 6 is an enlarged plan view showing the intermediate portion 18, and FIG. 7 is a cross-sectional view of the intermediate portion 18 of FIG. 6 viewed from the VII-VII direction. As shown in FIG. 6, the plurality of through holes 25 are regularly arranged in the effective region 22 at predetermined pitches in two directions orthogonal to each other.

  Hereinafter, the shapes of the through hole 25 and its peripheral portion will be described in detail. Here, the shape of the through hole 25 and the surrounding portion thereof when the vapor deposition mask 20 is formed by plating will be described.

  As shown in FIG. 7, the intermediate portion 18 includes a first metal layer 32 forming the first surface 20a and a second metal layer 37 forming the second surface 20b. The first opening 30 is provided in the first metal layer 32 in a predetermined pattern, and the second opening 35 is provided in the second metal layer 37 in a predetermined pattern. In the intermediate portion 18, the first opening 30 and the second opening 35 communicate with each other to form a through hole 25 extending from the first surface 20a to the second surface 20b of the vapor deposition mask 20.

  As shown in FIG. 6, the first opening 30 and the second opening 35 forming the through hole 25 may have a substantially polygonal shape in a plan view. Here, an example is shown in which the first opening 30 and the second opening 35 have a substantially quadrangular shape, more specifically, a substantially square shape. Further, although not shown, the first opening 30 and the second opening 35 may have another polygonal shape such as a substantially hexagonal shape or a substantially octagonal shape. Note that the “substantially polygonal shape” is a concept including a shape in which the corners of the polygon are rounded. Although not shown, the first opening 30 and the second opening 35 may have a circular shape. Further, as long as the second opening 35 has a contour that surrounds the first opening 30 in a plan view, the shape of the first opening 30 and the shape of the second opening 35 do not have to be similar.

  In FIG. 7, reference numeral 41 represents a connecting portion where the first metal layer 32 and the second metal layer 37 are connected. Further, the symbol S0 represents the size of the through hole 25 in the connecting portion 41 between the first metal layer 32 and the second metal layer 37. Although FIG. 7 shows an example in which the first metal layer 32 and the second metal layer 37 are in contact with each other, the present invention is not limited to this, and the first metal layer 32 and the second metal layer 37 may be connected to each other. Other layers may be interposed. For example, a catalyst layer for promoting precipitation of the second metal layer 37 on the first metal layer 32 may be provided between the first metal layer 32 and the second metal layer 37.

  FIG. 8 is an enlarged view showing a part of the first metal layer 32 and the second metal layer 37 of FIG. 7. As shown in FIG. 8, the width M2 of the second metal layer 37 on the second surface 20b of the vapor deposition mask 20 is smaller than the width M1 of the first metal layer 32 on the first surface 20a of the vapor deposition mask 20. In other words, the opening dimension S2 of the through hole 25 (second opening portion 35) on the second surface 20b is larger than the opening dimension S1 of the through hole 25 (first opening portion 30) on the first surface 20a. Hereinafter, advantages of forming the first metal layer 32 and the second metal layer 37 in this manner will be described.

  The vapor deposition material 98 flying from the second surface 20b side of the vapor deposition mask 20 passes through the second opening 35 and the first opening 30 of the through hole 25 in order and adheres to the organic EL substrate 92. The region of the organic EL substrate 92 to which the vapor deposition material 98 adheres is mainly determined by the opening size S1 and the opening shape of the through hole 25 in the first surface 20a. By the way, as shown by an arrow L1 from the second surface 20b side to the first surface 20a in FIGS. 7 and 8, the vapor deposition material 98 is the normal direction N of the vapor deposition mask 20 from the crucible 94 toward the organic EL substrate 92. Not only does it move along with, but it may also move in a direction largely inclined with respect to the normal direction N of the vapor deposition mask 20. Here, assuming that the opening dimension S2 of the through hole 25 on the second surface 20b is the same as the opening dimension S1 of the through hole 25 on the first surface 20a, it is largely inclined with respect to the normal direction N of the vapor deposition mask 20. Most of the vapor deposition material 98 that moves in the direction reaches and adheres to the wall surface 36 of the second opening 35 of the through hole 25 before reaching the organic EL substrate 92 through the through hole 25. Therefore, in order to improve the utilization efficiency of the vapor deposition material 98, it can be said that it is preferable to increase the opening dimension S2 of the second opening 35, that is, to reduce the width M2 of the second metal layer 37.

  In FIG. 7, the minimum angle formed by the straight line L1 in contact with the wall surface 36 of the second metal layer 37 and the wall surface 31 of the second metal layer 37 with respect to the normal direction N of the vapor deposition mask 20 is represented by reference sign θ1. . In order to make the vapor deposition material 98 moving obliquely reach the organic EL substrate 92 as much as possible, it is advantageous to increase the angle θ1. For example, it is preferable that the angle θ1 be 45 ° or more.

  To increase the angle θ1, it is effective to reduce the width M2 of the second metal layer 37 as compared with the width M1 of the first metal layer 32. Further, as is apparent from the drawing, in order to increase the angle θ1, it is also effective to reduce the thickness T1 of the first metal layer 32 and the thickness T2 of the second metal layer 37. Note that if the width M2 of the second metal layer 37, the thickness T1 of the first metal layer 32, and the thickness T2 of the second metal layer 37 are excessively reduced, the strength of the vapor deposition mask 20 decreases, and therefore, during transport. It is conceivable that the vapor deposition mask 20 may be damaged during use. For example, the vapor deposition mask 20 may be damaged by the tensile stress applied to the vapor deposition mask 20 when the vapor deposition mask 20 is stretched over the frame 15. Considering these points, it can be said that the dimensions of the first metal layer 32 and the second metal layer 37 are preferably set in the following ranges. Thereby, the above-mentioned angle θ1 can be set to, for example, 45 ° or more.

The width M1 of the first metal layer 32 is 5 μm or more and 25 μm or less. The width M2 of the second metal layer 37 is 2 μm or more and 20 μm or less. The thickness T0 of the vapor deposition mask 20 is 5 μm or more and 50 μm or less, more preferably 3 μm or more and 50 μm or less, more preferably 3 μm or more and 30 μm or less, further preferably 3 μm or more and 25 μm or less-thickness T1 of the first metal layer 32: 5 μm or less-thickness T2 of the second metal layer 37: 2 μm or more and 50 μm or less, more preferably Is 3 μm or more and 50 μm or less, more preferably 3 μm or more and 30 μm or less, and further preferably 3 μm or more and 25 μm or less. In the present embodiment, the thickness T0 of the vapor deposition mask 20 is either in the ear portion 17 or the intermediate portion 18. Are also the same.

  The above-described opening dimensions S0, S1, S2 are appropriately set in consideration of the pixel density of the organic EL display device, the desired value of the angle θ1 described above, and the like. For example, when manufacturing an organic EL display device having a pixel density of 400 ppi or more, the opening dimension S0 of the through hole 25 in the connection portion 41 can be set to 15 μm or more and 60 μm or less. The opening dimension S1 of the first opening 30 on the first surface 20a is set to 10 μm or more and 50 μm or less, and the opening dimension S2 of the second opening 35 on the second surface 20b is set to 15 μm or more and 60 μm or less. Can be done.

  As shown in FIG. 8, a depression 34 may be formed on the first surface 20 a of the vapor deposition mask 20 formed of the first metal layer 32. The recess 34 is formed corresponding to the conductive pattern 52 of the pattern substrate 50 described later when the vapor deposition mask 20 is manufactured by the plating process. The depth D of the depression 34 is, for example, 50 nm or more and 500 nm or less. Preferably, the outer edge 34e of the recessed portion 34 formed in the first metal layer 32 is located between the end portion 33 of the first metal layer 32 and the connection portion 41.

  Next, a method of manufacturing the vapor deposition mask device 10 will be described. First, a method of manufacturing the vapor deposition mask 20 of the vapor deposition mask device 10 will be described. Here, an example of manufacturing the vapor deposition mask 20 by plating will be described.

(Method of manufacturing vapor deposition mask)
9A to 9D are diagrams illustrating a method of manufacturing the vapor deposition mask 20.

[Pattern substrate preparation process]
First, the patterned substrate 50 shown in FIG. 9A is prepared. The pattern substrate 50 has a base material 51 having an insulating property, and a conductive pattern 52 formed on the base material 51. The conductive pattern 52 has a pattern corresponding to the first metal layer 32.

  The material forming the base material 51 and the thickness of the base material 51 are not particularly limited as long as they have insulating properties and appropriate strength. For example, glass, synthetic resin, or the like can be used as the material forming the base material 51.

  As a material for forming the conductive pattern 52, a material having conductivity such as a metal material or an oxide conductive material is appropriately used. Examples of the metal material include chrome and copper. The thickness of the conductive pattern 52 is, for example, 50 nm or more and 500 nm or less.

  Note that the pattern substrate 50 may be subjected to a mold release treatment in order to facilitate a later-described separation step of separating the vapor deposition mask 20 from the pattern substrate 50.

  For example, first, a degreasing process for removing oil on the surface of the patterned substrate 50 is performed. For example, an acid degreasing liquid is used to remove oil on the surface of the conductive pattern 52 of the pattern substrate 50.

  Next, an activation process for activating the surface of the conductive pattern 52 is performed. For example, the same acidic solution as the acidic solution contained in the first plating solution used in the later-described first plating treatment step is brought into contact with the surface of the conductive pattern 52. For example, when the first plating solution contains nickel sulfamate, sulfamic acid is brought into contact with the surface of the conductive pattern 52.

  Next, an organic film forming process is performed to form an organic film on the surface of the conductive pattern 52. For example, a release agent containing an organic material is brought into contact with the surface of the conductive pattern 52. At this time, the thickness of the organic film is set so that the electric resistance of the organic film is such that the deposition of the first metal layer 32 by electrolytic plating is not hindered by the organic film. The release agent may contain a sulfur component.

  After the degreasing treatment, the activation treatment and the organic film forming treatment, a washing treatment for washing the patterned substrate 50 with water is performed.

[First plating treatment step]
Next, the first plating treatment step of supplying the first plating solution onto the base material 51 on which the conductive pattern 52 is formed and depositing the first metal layer 32 on the conductive pattern 52 is performed. For example, the base material 51 on which the conductive pattern 52 is formed is immersed in a plating bath filled with the first plating solution. As a result, as shown in FIG. 9B, it is possible to obtain the first metal layer 32 having the first openings 30 formed in a predetermined pattern on the patterned substrate 50.

  Due to the characteristics of the plating process, as shown in FIG. 9B, the first metal layer 32 is not only a portion overlapping the conductive pattern 52 when viewed along the normal direction of the base material 51, but also the conductive pattern. It can also be formed in a portion that does not overlap 52. This is because the first metal layer 32 is further deposited on the surface of the first metal layer 32 deposited on the portion overlapping the end portion 54 of the conductive pattern 52. As a result, as shown in FIG. 9B, the end portion 33 of the first opening portion 30 may be located in a portion that does not overlap the conductive pattern 52 when viewed along the normal direction of the base material 51. . Further, the above-mentioned recessed portion 34 corresponding to the thickness of the conductive pattern 52 is formed on the surface of the first metal layer 32 on the side in contact with the conductive pattern 52.

  In FIG. 9B, the width of the portion of the first metal layer 32 that does not overlap with the conductive pattern 52 (that is, the portion where the recessed portion 34 is not formed) is represented by the symbol w. The width w is, for example, 0.5 μm or more and 5.0 μm or less. The size of the conductive pattern 52 is set in consideration of this width w.

  The specific method of the first plating treatment step is not particularly limited as long as the first metal layer 32 can be deposited on the conductive pattern 52. For example, the first plating treatment step may be performed as a so-called electrolytic plating treatment step in which the first metal layer 32 is deposited on the conductive pattern 52 by applying a current to the conductive pattern 52. Alternatively, the first plating treatment step may be an electroless plating treatment step. When the first plating treatment step is an electroless plating treatment step, a suitable catalyst layer may be provided on the conductive pattern 52. Alternatively, the conductive pattern 52 may be configured to function as a catalyst layer. A catalyst layer may be provided on the conductive pattern 52 even when the electrolytic plating treatment step is performed.

  The components of the first plating solution used are appropriately determined according to the characteristics required for the first metal layer 32. For example, when the first metal layer 32 is composed of an iron alloy containing nickel, a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the first plating solution. For example, a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used. The plating solution may contain various additives. As the additive, a pH buffering agent such as boric acid, a primary brightening agent such as saccharin natriu, a secondary brightening agent such as butynediol, propargyl alcohol, coumarin, formalin and thiourea, and an antioxidant may be used. . The primary brightener may contain a sulfur component.

[Resist forming step]
Next, a resist forming step of forming a resist pattern 55 on the base material 51 and the first metal layer 32 with a predetermined gap 56 is performed. FIG. 9C is a cross-sectional view showing the resist pattern 55 formed on the base material 51. As shown in FIG. 9C, in the resist forming step, the first opening 30 of the first metal layer 32 is covered with the resist pattern 55, and the gap 56 of the resist pattern 55 is located on the first metal layer 32. Be implemented.

  Hereinafter, an example of the resist forming step will be described. First, a dry film is attached on the base material 51 and the first metal layer 32 to form a negative resist film. The dry film is a film attached to an object such as a base material 51 to form a resist film on the object. The dry film includes at least a base film made of PET or the like, and a photosensitive layer laminated on the base film and having photosensitivity. The photosensitive layer contains a photosensitive material such as an acrylic photocurable resin, an epoxy resin, a polyimide resin, or a styrene resin. Note that the resist film may be formed by applying the material for the resist pattern 55 on the base material 51 and then performing baking as necessary.

  Next, an exposure mask that does not transmit light is prepared in a region of the resist film that should be the gap 56, and the exposure mask is arranged on the resist film. Then, the exposure mask is sufficiently adhered to the resist film by vacuum adhesion. After that, the resist film is exposed through the exposure mask. Further, the resist film is developed to form an image on the exposed resist film. As described above, as shown in FIG. 9C, the gap 56 located on the first metal layer 32 is provided, and the resist pattern 55 covering the first opening 30 of the first metal layer 32 can be formed. . In order to bring the resist pattern 55 into closer contact with the base material 51 and the first metal layer 32, a heat treatment step of heating the resist pattern 55 may be performed after the developing step.

  A positive type resist film may be used. In this case, as the exposure mask, an exposure mask that allows light to pass through a region of the resist film to be removed is used.

[Second plating treatment step]
Next, a second plating process is performed in which the second plating solution is supplied to the gaps 56 of the resist pattern 55 to deposit the second metal layer 37 on the first metal layer 32. For example, the base material 51 on which the first metal layer 32 is formed is immersed in a plating tank filled with the second plating solution. Thereby, as shown in FIG. 9D, the second metal layer 37 can be formed on the first metal layer 32.

  As long as the second metal layer 37 can be deposited on the first metal layer 32, the specific method of the second plating treatment step is not particularly limited. For example, the second plating treatment step may be carried out as a so-called electrolytic plating treatment step of depositing the second metal layer 37 on the first metal layer 32 by passing an electric current through the first metal layer 32. Alternatively, the second plating treatment step may be an electroless plating treatment step. When the second plating treatment step is an electroless plating treatment step, an appropriate catalyst layer may be provided on the first metal layer 32. A catalyst layer may be provided on the first metal layer 32 even when the electrolytic plating treatment step is performed.

  As the second plating solution, the same plating solution as the above-mentioned first plating solution may be used. Alternatively, a plating solution different from the first plating solution may be used as the second plating solution. When the composition of the first plating solution and the composition of the second plating solution are the same, the composition of the metal forming the first metal layer 32 and the composition of the metal forming the second metal layer 37 are also the same.

  Although FIG. 9D shows an example in which the second plating process is continued until the upper surface of the resist pattern 55 and the upper surface of the second metal layer 37 are aligned with each other, the present invention is not limited to this. . The second plating treatment step may be stopped while the upper surface of the second metal layer 37 is located below the upper surface of the resist pattern 55.

[Resist removal process]
After that, a resist removing step of removing the resist pattern 55 is performed. For example, the resist pattern 55 can be peeled from the base material 51, the first metal layer 32, and the second metal layer 37 by using an alkaline stripping solution.

[Separation process]
Next, a separation step of separating the combined body of the first metal layer 32 and the second metal layer 37 from the base material 51 is performed. As a result, the first metal layer 32 having the first opening 30 formed in a predetermined pattern and the second metal layer 37 having the second opening 35 communicating with the first opening 30 are provided. The vapor deposition mask 20 can be obtained.

  Hereinafter, an example of the separation step will be described in detail. First, a film provided with an adhesive substance by coating or the like is attached to a combination body of the first metal layer 32 and the second metal layer 37 formed on the base material 51. Next, the film is pulled up or taken up to separate the film from the base material 51, thereby separating the combination of the first metal layer 32 and the second metal layer 37 from the base material 51 of the patterned substrate 50. . Then, the film is peeled off from the combination of the first metal layer 32 and the second metal layer 37.

  In addition, in the separation step, first, a gap that triggers separation is formed between the combination of the first metal layer 32 and the second metal layer 37 and the base material 51, and then the gap is formed in this gap. Air may be blown, which may accelerate the separation process.

  As the substance having adhesiveness, a substance that loses its adhesiveness by being irradiated with light such as UV or by being heated may be used. In this case, after the combination of the first metal layer 32 and the second metal layer 37 is separated from the base material 51, the step of irradiating the film with light and the step of heating the film are performed. This can facilitate the step of peeling the film from the combination of the first metal layer 32 and the second metal layer 37. For example, the film can be peeled off while keeping the film and the combination of the first metal layer 32 and the second metal layer 37 as parallel to each other as possible. This can prevent the combination of the first metal layer 32 and the second metal layer 37 from being curved when the film is peeled off, which causes the vapor deposition mask 20 to be deformed such as curved. Can be suppressed.

(Welding process of vapor deposition mask)
Next, a welding process of welding the vapor deposition mask 20 obtained as described above to the frame 15 is performed. Thereby, the vapor deposition mask device 10 including the vapor deposition mask 20 and the frame 15 can be obtained.

(Conventional welding process)
By the way, when the inventors of the present invention have conducted extensive research, the vapor deposition mask 20 manufactured by the plating process is similar to the vapor deposition mask 20 manufactured by etching a metal plate obtained by rolling to form a through hole. In comparison, it was found that the weld strength of the joint portion 19 was low. Hereinafter, a phenomenon observed when the vapor deposition mask 20 manufactured by the plating process is welded to the frame 15 will be described with reference to FIGS. 10A and 10B.

  First, as shown in FIG. 10A, the vapor deposition mask 20 was placed on the frame 15 so that the second surface 20 b of the ear portion 17 faces the frame 15. Next, as shown in FIG. 10A, the ear portion 17 was irradiated with the laser light L from the first surface 20a side to heat a part of the ear portion 17. In FIG. 10A, the symbol S represents the spot diameter of the laser light L with which the ear portion 17 is irradiated. The spot diameter S is, for example, 100 μm or more and 300 μm or less.

  When the ears 17 were heated, as shown in FIG. 10B, the ears 17 and the frame 15 were melted to form a fused region 19f extending over the ears 17 and the frame 15. After that, the temperature of the melting region 19f is lowered and the melting region 19f is solidified to form a welding mark 19a, and the ear portion 17 of the vapor deposition mask 20 is fixed to the frame 15 by the welding mark 19a. When the thickness T (see FIG. 5) of the frame 15 is large, the molten region 19f does not spread to the surface of the frame 15 located on the side opposite to the surface bonded to the vapor deposition mask 20. The thickness T of the frame 15 is, for example, 5 mm or more and 30 mm or less.

  As shown in FIG. 10B, the welding marks 19a formed on the ears 17 and a part of the frame 15 by welding the ears 17 to the frame 15 are recesses 19c and protrusions formed on the first surface 20a side. 19b.

  Of these, the concave portion 19c is a portion that is depressed toward the second surface 20b. The recessed portion 19c was formed in the vicinity of the boundary between the portion of the ear 17 that was irradiated with the laser light L and the portion that was not irradiated with the laser light L. In other words, the recess 19c was formed in the vicinity of the outer edge of the laser light L represented by the spot diameter S.

  The convex portion 19b is a portion protruding upward from the first surface 20a. The convex portion 19b is formed closer to the center of the welding mark 19a than the concave portion 19c.

  As shown in FIG. 10B, in the portion of the ear portion 17 where the recess 19c is formed in the first surface 20a, the thickness T0 of the ear portion 17 is locally reduced by the depth of the recess 19c, and the joint portion The welding strength of 19 becomes small. Further, the thickness T0 of the ears 17 of the vapor deposition mask 20 manufactured by the plating process is generally smaller than the thickness T0 of the ears 17 of the vapor deposition mask 20 manufactured by rolling. Therefore, when the vapor deposition mask 20 is manufactured by plating, the welding strength of the joint portion 19 including the welding mark 19a is greatly affected by the recess 19c. As a result, it is considered that the vapor deposition mask 20 manufactured by the plating process has a lower welding strength at the joint portion 19 than the vapor deposition mask 20 manufactured by rolling.

  The welding strength is the magnitude of the force required to peel the ear portion 17 of the vapor deposition mask 20 welded to the frame 15 by the joint portion 19 from the frame 15. FIG. 11 shows an example of a method for measuring the welding strength of the joint portion 19. In the welding strength measurement step, first, the sample 17S obtained by cutting out a part of the ear portion 17 of the vapor deposition mask 20 is welded to the frame 15. Next, as shown in FIG. 11, a tensile force E in the direction along the normal direction of the frame 15 is applied to the end portion of the sample 11S in the longitudinal direction. In this case, the tensile force E when the sample 17S breaks or the sample 17S is peeled from the frame 15 is the welding strength of the joint portion 19.

  Hereinafter, in the vapor deposition mask 20 manufactured by the plating process, the reason why the above-mentioned convex portion 19b and concave portion 19c are formed in the welding trace 19a will be considered. When the vapor deposition mask 20 is manufactured by a plating process, stress is generated inside the vapor deposition mask 20 due to strain generated in the process of forming a layer by deposition. After that, when the melted region 19f is formed by heating the vapor deposition mask 20 during welding, the internal stress is relieved. Here, in the laser beam L, the intensity of the central portion of the spot diameter is usually higher than the intensity of the outer edge portion of the spot diameter. For example, the laser light L has an intensity distribution close to a Gaussian distribution. Therefore, the relaxation of the internal stress in the melting region 19f is more likely to proceed in the central portion of the melting region 19f than in the peripheral portion of the melting region 19f. As a result, as indicated by the arrow F in FIG. 10A, in the melting region 19f, the material flows from the peripheral portion toward the central portion, and the material in the central portion rises and rises, and as a result, the convex portion 19b and the concave portion 19c. Is believed to have been formed. Further, it is considered that the concave portion 19c is also formed when the molten material is scattered from the upper surface of the molten region 19f. The reason why the above-mentioned convex portion 19b and concave portion 19c are formed is not limited to the above-mentioned reason.

(Welding process according to the present embodiment)
In order to solve the above-mentioned problems in the conventional welding process, it is proposed in the present embodiment that the glass plate 60 is used to perform the welding process. Hereinafter, the welding process according to the present embodiment will be described with reference to FIGS. 12A to 12C.

[Placement process]
First, as shown in FIG. 12A, the ears 17 of the vapor deposition mask 20 are arranged on the frame 15 so that the second surface 20 b faces the frame 15. Next, when the vapor deposition mask 20 is viewed along the normal line direction of the first surface 20a, the glass plate 60 is arranged on at least a portion of the first surface 20a of the ear portion 17 of the vapor deposition mask 20 that overlaps the frame 15. The glass plate 60 has a first surface 60a and a second surface 60b located on the opposite side of the first surface 60a, and both the first surface 60a and the second surface 60b are formed flat. The second surface 60b of these faces the first surface 20a of the ear portion 17. In the present embodiment, the glass plate 60 is placed on the ear portion 17 of the vapor deposition mask 20. The glass plate 60 is not provided with a pressing force for pressing it against the ears 17 other than the force of its own weight. In addition, after the glass plate 60 is placed on the ear portion 17, the ear portion 17 may be placed on the frame 15.

  The glass plate 60 is a member for preventing the melting region 19f from rising when the ears 17 are welded to the frame 15. For example, the glass plate 60 having a thickness of 1.1 mm preferably has a transmittance of 50% or more when the YAG laser light described below is the third harmonic 355 nm having a wavelength of 355 nm. In this case, the attenuation of the laser light L transmitted through the glass plate 60 can be suppressed. The material of the glass plate 60 is not particularly limited, but may be, for example, borosilicate glass. An example of the glass plate 60 made of borosilicate glass is Eagle glass manufactured by Corning Incorporated.

  As shown in FIG. 12A, the glass plate 60 has a dimension at least larger than the spot diameter S of the laser light L used in the welding process in the direction in which the first surface 20a of the vapor deposition mask 20 extends. Preferably, the glass plate 60 has a size overlapping the ears 17 provided at both ends in the longitudinal direction of the vapor deposition mask 20, and more preferably, the plurality of vapor deposition masks 20 supported by the frame 15 are provided. It has a size overlapping the ears 17. In this case, as shown in FIG. 2, each ear portion 17 of the vapor deposition masks 20 supported by the frame 15 can be covered with a single glass plate 60, and the workability of arranging the glass plates 60 can be improved. it can. The thickness T3 of the glass plate 60 is preferably 0.5 mm or more in order to prevent the melting region 19f from rising and to secure the strength to prevent damage during handling. On the other hand, in order to reduce the weight for the purpose of improving workability, the thickness T3 of the glass plate 60 is preferably 1.1 mm or less.

[Irradiation process]
Next, as shown in FIG. 12A, an irradiation step of irradiating the laser light L from the first surface 60a side of the glass plate 60 is performed. As a result, the laser light L is transmitted through the glass plate 60, and as shown in FIG. To the frame 15 through the second surface 20b. The melting region 19f straddles the ears 17 and the frame 15.

  As the laser light L, for example, YAG laser light generated by a YAG laser device can be used. As the YAG laser device, for example, a device provided with a crystal obtained by adding Nd (neodymium) to YAG (yttrium aluminum garnet) as an oscillation medium can be used. In this case, laser light having a wavelength of about 1064 nm is generated as the fundamental wave. Further, the second harmonic having a wavelength of about 532 nm is generated by passing the fundamental wave through the nonlinear optical crystal. Further, by passing the fundamental wave and the second harmonic through a nonlinear optical crystal, a third harmonic having a wavelength of about 355 nm is generated.

  The third harmonic of the YAG laser light is easily absorbed by the iron alloy containing nickel. Therefore, in order to efficiently melt the ears 17 of the vapor deposition mask 20 and a part of the frame 15, the laser light L preferably contains the third harmonic of the YAG laser light.

  While the laser light L is being irradiated, in the melting region 19f, the material flows from the peripheral portion toward the central portion, and the material in the central portion rises. However, according to the present embodiment, as shown in FIG. 12B, the glass plate 60 is arranged on the ear portion 17 of the vapor deposition mask 20. As a result, the melting region 19f is covered with the glass plate 60, the rising of the molten material rising in the central portion is regulated by the glass plate 60, and the molten material can be directed in the peripheral direction. Therefore, a flat upper end surface 19d is formed on the upper portion of the fusion area 19f. Further, since the molten region 19f is covered with the glass plate 60, it is possible to suppress the molten material from scattering from the upper surface of the molten region 19f.

  By the way, in the present embodiment, the glass plate 60 is placed on the ear portion 17 of the vapor deposition mask 20 as described above, and in addition to the force due to the weight of the glass plate 60, the glass plate 60 is placed on the ear portion 17. No pressing force is applied. Therefore, depending on the thickness of the glass plate 60, the glass plate 60 may be slightly lifted due to the rise of the molten material. In this case, the molten material that has risen in the central portion rises slightly above the first surface 20a, but is regulated by the glass plate 60 and heads in the peripheral direction. Therefore, the flat upper end surface 19d can be formed on the melting region 19f. The formed upper end surface 19d is formed at a position slightly higher than the first surface 20a (a position farther from the second surface 20b than the first surface 20a). In addition, when the glass plate 60 is slightly lifted, the molten material may be slightly scattered from the upper surface of the molten region 19f. As a result, a recess 19c as shown in FIG. 12B can be formed around the upper end surface 19d that is formed. However, the rise of the molten material is restricted by the glass plate 60, so that the planar area of the upper end surface 19d becomes large and the planar area of the recessed portion 19c formed becomes small. As a result, the depth of the recess 19c can be reduced. 12B and 12C show an example in which the upper end surface 19d is formed on an extension of the first surface 20a of the vapor deposition mask 20.

  When the irradiation of the laser beam L is finished, the temperature of the melting region 19f is lowered and the melting region 19f is solidified to form the welding mark 19a. As a result, the ears 17 of the vapor deposition mask 20 and the frame 15 are joined to each other by the welding marks 19a. The glass plate 60 is arranged on the ear portion 17 of the vapor deposition mask 20 even while the temperature of the melting region 19f is decreasing. Therefore, the welding trace 19a formed by solidifying the melting region 19f has a shape having the upper end surface 19d and the recess 19c described above. Of these, the shape of the upper end surface 19d is maintained flat. Further, as described above, since the recess 19c formed around the upper end surface 19d becomes small, the depth of the recess 19c can be made shallow in the welding trace 19a obtained from the fusion area 19f.

[Glass plate removal process]
Next, as shown in FIG. 12C, a glass plate removing step of removing the glass plate 60 is performed. Thus, the vapor deposition mask device 10 including the frame 15 and the vapor deposition mask 20 joined to the frame 15 by the joining portion 19 can be obtained.

  According to the present embodiment, by arranging the glass plate 60 on the ear portion 17 and performing the welding process, the melting region 19f straddling the ear portion 17 and the frame 15 by the irradiation of the laser light L is It is covered by a glass plate 60 arranged on the part 17. This can prevent the molten material from rising in the central portion of the molten region 19f. Further, it is possible to prevent the molten material from scattering from the upper surface of the molten region 19f. Therefore, it is possible to form the flat upper end surface 19d on the upper portion of the melting region 19f and reduce the size of the recess 19c formed around the upper end surface 19d. As a result, it is possible to suppress the thickness of the vapor deposition mask 20 from locally decreasing at the joint portion 19 and to increase the welding strength of the joint portion 19 of the vapor deposition mask 20. In particular, even with the vapor deposition mask 20 having a small thickness manufactured by the plating process, it is possible to prevent the thickness of the vapor deposition mask 20 from locally decreasing at the joint portion 19. Therefore, the joint portion 19 of the vapor deposition mask 20 having a small thickness can be prevented. The welding strength of can be effectively increased.

  By the way, as shown in FIG. 5 described above, the organic EL substrate 92 may extend to a portion of the vapor deposition mask 20 where the bonding portion 19 is formed. In this case, when the convex portion 19b is formed on the surface of the joint portion 19, the convex portion 19b comes into contact with the organic EL substrate 92 when the vapor deposition mask 20 is brought into close contact with the organic EL substrate 92 to perform the vapor deposition process. As a result, the surface of the organic EL substrate 92 may be damaged.

  In addition, before performing the adhesion step of bringing the vapor deposition mask 20 into close contact with the organic EL substrate 92, a position adjusting step of adjusting the position of the vapor deposition mask 20 in the surface direction of the organic EL substrate 92 may be performed. In the position adjusting step, for example, the vapor deposition mask 20 is moved along the surface direction of the organic EL substrate 92 with a predetermined gap between the organic EL substrate 92 and the first surface 20a of the vapor deposition mask 20. The position of the vapor deposition mask 20 is adjusted. At this time, it is conceivable that the convex portion 19b comes into contact with the organic EL substrate 92 due to an error in the position adjustment of the vapor deposition mask 20.

  On the other hand, according to the present embodiment, the upper end surface 19d of the welding mark 19a is formed flat. As a result, it is possible to prevent the surface of the organic EL substrate 92 from being damaged due to the welding mark 19a coming into contact with the organic EL substrate 92. For example, it is possible to prevent the wirings and electrodes formed in advance on the organic EL substrate 92 from being damaged.

  Further, according to the present embodiment, the depression 34 is formed on the first surface 20a of the intermediate portion 18 of the vapor deposition mask 20. Therefore, even when an error in the position adjustment of the vapor deposition mask 20 or a bending of the vapor deposition mask 20 occurs in the position adjustment process of adjusting the position of the vapor deposition mask 20 in the surface direction of the organic EL substrate 92, the organic The area of the vapor deposition mask 20 in contact with the EL substrate 92 can be reduced. This can prevent the surface of the organic EL substrate 92 from being damaged.

  Various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, for the parts that can be configured in the same manner as the above-described embodiment, the same reference numerals as those used for the corresponding portions in the above-described embodiment are used. A duplicate description will be omitted. Further, when it is clear that the effects obtained in the above-described embodiment can be obtained in the modified example as well, the description thereof may be omitted.

(First Modification of Vapor Deposition Mask Manufacturing Method)
In the above-described present embodiment, the case where vapor deposition mask 20 is configured by stacking at least two metal layers of first metal layer 32 and second metal layer 37 has been described. However, the vapor deposition mask 20 is not limited to this, and may be composed of one metal layer 27 in which a plurality of through holes 25 are formed in a predetermined pattern. Hereinafter, an example in which the vapor deposition mask 20 includes one metal layer 27 will be described with reference to FIGS. 13A to 14. In this modification, a portion of the through hole 25 extending from the first surface 20a to the second surface 20b of the vapor deposition mask 20 on the first surface 20a is referred to as a first opening 30, and the through hole 25 is formed. Of these, the portion located on the second surface 20b is referred to as the second opening 35.

  First, a method of manufacturing the vapor deposition mask 20 according to the present modification will be described.

  First, the base material 51 on which the predetermined conductive pattern 52 is formed is prepared. Next, as shown in FIG. 13A, a resist forming step of forming a resist pattern 55 on the base material 51 with a predetermined gap 56 therebetween is performed. Preferably, the distance between the side surfaces 57 of the resist pattern 55 that defines the gap 56 of the resist pattern 55 becomes narrower as the distance from the base material 51 increases. That is, the resist pattern 55 has a so-called reverse taper shape in which the width of the resist pattern 55 increases as the distance from the base material 51 increases.

  An example of a method of forming such a resist pattern 55 will be described. For example, first, a resist film containing a photocurable resin is provided on the surface of the base material 51 on the side where the conductive pattern 52 is formed. Next, the resist film is exposed by irradiating the resist film with the exposure light incident on the substrate 51 from the side of the base material 51 opposite to the side on which the resist film is provided. Then, the resist film is developed. In this case, the resist pattern 55 having an inverse taper shape as shown in FIG. 13A can be obtained based on the wraparound (diffraction) of the exposure light.

  Then, as shown in FIG. 13B, a plating solution is supplied to the gap 56 of the resist pattern 55 to deposit the metal layer 27 on the conductive pattern 52, and a plating process step is performed. Then, by performing the resist removing step and the separating step described above, as shown in FIG. 14, the vapor deposition mask 20 including the metal layer 27 in which the through holes 25 are formed in a predetermined pattern can be obtained.

(Second Modification of Vapor Deposition Mask Manufacturing Method)
In the above-described present embodiment and modification examples, an example in which the vapor deposition mask 20 is manufactured by a plating process has been described. However, the method adopted for producing the vapor deposition mask 20 is not limited to the plating process. For example, as disclosed in the above-mentioned Patent Document 1, the vapor deposition mask 20 may be manufactured by forming the through holes 25 in the metal plate 21 by etching.

(Modified example of ear)
In the above-described present embodiment and modification, an example is shown in which the thickness of the ear portion 17 of the vapor deposition mask 20 and the thickness of the intermediate portion 18 are the same. However, the thickness is not limited to this, and the thickness of the ear portion 17 and the thickness of the intermediate portion 18 may be different.

(Modification of glass plate)
In the above-described present embodiment and modification, an example in which the single glass plate 60 covers the respective ears 17 of the vapor deposition masks 20 supported by the frame 15 has been shown. However, the shape of the metal plate 60 is not particularly limited as long as the laser light L can pass through the glass plate 60 arranged on the ear portion 17 to weld the ear portion 17 to the frame 15. For example, the glass plate 60 has only to cover the portion of the ear portion 17 that overlaps the frame 15, and may be a separate member for each ear portion 17 of each vapor deposition mask 20.

(Modification of glass plate placement process)
In the arrangement step in which the glass plate 60 is arranged on the first surface 20a of the ear portion 17 of the vapor deposition mask 20, the glass plate 60 may be pressed by the ear portion 17 of the vapor deposition mask 20. Here, the term “press” is used to mean that the glass plate 60 is pressed against the ear portion 17 by receiving a pressing force other than the force due to the weight of the glass plate 60.

  For example, as shown in FIG. 15, by disposing a magnet 61 on a glass plate 60, the magnetic force of the magnet 61 pulls the vapor deposition mask 20 and the frame 15 toward the magnet 61 side, and the glass plate 60 is placed on the vapor deposition mask. 20 can be pressed. The magnet 61 is preferably provided with an opening 61a for irradiating the laser light L.

  By thus pressing the glass plate 60 against the ear portion 17, the glass plate 60 can be brought into close contact with the ear portion 17. In this case, it is possible to more reliably regulate the rise of the molten material that has risen in the central portion of the molten region 19f. Therefore, the upper end surface 19d formed above the melting region 19f can be formed on the extension of the first surface 20a of the vapor deposition mask 20 (that is, flush with the first surface 20a). In this case, it is possible to further prevent the surface of the organic EL substrate 92 from being scratched by coming into contact with the organic EL substrate 92 by the welding mark 19a.

  Further, since the glass plate 60 can be brought into close contact with the ear portion 17, it is possible to prevent the glass plate 60 from being lifted due to the rise of the molten material, and to prevent the molten material from scattering from the upper surface of the melting region 19f. For this reason, it is possible to prevent the recess 19c as shown in FIG. 12B and the like from being formed around the upper end surface 19d, and it is possible to further prevent the thickness of the vapor deposition mask 20 at the bonding portion 19 from being locally reduced. In this case, the thickness of the vapor deposition mask 20 can be made uniform even in the joint portion 19, and the welding strength of the joint portion 19 can be further increased.

10 vapor deposition mask device 15 frame 19 joining part 19d upper end surface 20 vapor deposition mask 20a first surface 20b second surface 25 through hole 60 glass plate

Claims (8)

A method of manufacturing a vapor deposition mask device, comprising:
A preparatory step of preparing a vapor deposition mask including a plurality of through holes extending from the first surface to the second surface;
A welding step of welding the vapor deposition mask to a frame,
The welding process is
The vapor deposition mask is disposed on the frame so that the second surface faces the frame, and the vapor deposition mask is viewed when viewed along the normal direction of the first surface of the vapor deposition mask. An arranging step of arranging a glass plate on at least a portion of the first surface that overlaps with the frame;
An irradiation step of irradiating a laser beam from the glass plate side.   The method of manufacturing a vapor deposition mask device according to claim 1, wherein the preparing step includes a step of forming the vapor deposition mask by a plating process.   The method for manufacturing a vapor deposition mask device according to claim 1, wherein, in the preparing step, the vapor deposition mask having a thickness of 3 μm or more and 25 μm or less in a portion to be welded to the frame is prepared.   The said welding process is a manufacturing method of the vapor deposition mask apparatus as described in any one of Claims 1 thru | or 3 which further includes the glass plate removal process of removing the said glass plate after the said irradiation process.   The method for manufacturing a vapor deposition mask device according to claim 1, wherein the glass plate is pressed against the vapor deposition mask in the arranging step of the welding step. In the irradiation step, welding marks are formed from the first surface of the vapor deposition mask to the frame via the second surface, and welding traces for joining the vapor deposition mask and the frame to each other are formed.
The method for manufacturing a vapor deposition mask device according to claim 1, wherein the welding mark includes an upper end surface formed in a flat shape at a position farthest from the second surface of the vapor deposition mask.   The method of manufacturing a vapor deposition mask device according to claim 6, wherein the upper end surface is formed on an extension of the first surface of the vapor deposition mask. A vapor deposition mask device,
A vapor deposition mask including a plurality of through holes extending from the first surface to the second surface;
A frame facing the second surface of the vapor deposition mask;
A welding mark that reaches the frame from the first surface of the vapor deposition mask through the second surface and joins the vapor deposition mask and the frame to each other;
The vapor deposition mask device, wherein the welding mark includes an upper end surface formed in a flat shape at a position farthest from the second surface of the vapor deposition mask.

Images