JP2020100876A - Vapor deposition mask device, vapor deposition mask, manufacturing method of vapor deposition mask device, and manufacturing method of vapor deposition mask - Google Patents

Abstract

To provide a vapor deposition mask device in which, in a vapor deposition process for depositing an organic material on a substrate by using a vapor deposition mask, the substrate is installed on a desired position, and adhesion between the vapor deposition mask and the substrate can be improved.SOLUTION: A vapor deposition mask device 10 includes: vapor deposition masks 20, 30 having a first surface, and a second surface 30b positioned on the opposite side to the first surface 30a; and a frame 15 bonded to the vapor deposition masks via a linear first junction 19a, and positioned on the second surface side, in which, in a unit length along a longer direction of the first junction, a difference H1 of elevation between the highest point and the lowest point in a normal direction on the first surface in the first junction is 5 μm or less.SELECTED DRAWING: Figure 5

Description

The present disclosure relates to a vapor deposition mask device, a vapor deposition mask, a method for manufacturing a vapor deposition mask device, and a method for manufacturing a vapor deposition mask.

A display device used in a portable device such as a smartphone or a tablet PC preferably has high definition, and for example, has a pixel density of 600 ppi or more. In addition, even in portable devices, there is an increasing demand for supporting ultra high definition (UHD). In this case, it is preferable that the pixel density of the display device is, for example, 800 ppi or more.

Among display devices, organic EL display devices have been attracting attention because of their good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, there is known a method of forming pixels in a desired pattern using a vapor deposition mask including through holes arranged in a desired pattern. Specifically, first, a vapor deposition mask is brought into close contact with a substrate for an organic EL display device (organic EL substrate), and then the closely attached vapor deposition mask and substrate are put into the vapor deposition device. Next, a vapor deposition process is performed in which a vapor deposition mask is brought into close contact with the organic EL substrate in the vapor deposition apparatus to vapor deposit the organic material on the organic EL substrate.

A vapor deposition apparatus that performs a vapor deposition process of vapor depositing a vapor deposition material such as an organic material includes a vapor deposition mask device including a vapor deposition mask and a frame that supports the vapor deposition mask. The frame supports the vapor deposition mask in a pulled state so that the vapor deposition mask does not bend. The vapor deposition mask is fixed to the frame by, for example, laser welding. Then, the substrate is placed in such a vapor deposition mask device, and the vapor deposition process is performed in a vacuum atmosphere.

JP, 2005-127446, A

By the way, in the vapor deposition step of vapor-depositing an organic material on a substrate using such a vapor deposition mask, it is required that the substrate be installed at a desired position and that the adhesion between the vapor deposition mask and the substrate be improved. ing.

An object of the present disclosure is to provide a vapor deposition mask device that can effectively solve such problems.

According to one embodiment of the present disclosure, a vapor deposition mask having a first surface and a second surface located on the opposite side of the first surface, and bonded to the vapor deposition mask via a linear first bonding portion. A frame located on the second surface side, and having a maximum length in the normal direction of the first surface of the first bonding portion within a unit length along the longitudinal direction of the first bonding portion. In the vapor deposition mask device, the height difference between the point and the lowest point is 5 μm or less.

In an embodiment of the present disclosure, the difference between the width value of the widest portion of the first joint portion and the width value of the narrowest portion of the first joint portion is defined as the first joint portion. The change rate of the width obtained by dividing by the value of the width of the widest portion may be 0% or more and 20% or less.

In an embodiment of the present disclosure, the vapor deposition mask may have a thickness of 5 μm or more and 10 μm or less.

According to an embodiment of the present disclosure, a mask having a first surface and a second surface opposite to the first surface is bonded to the mask via a linear second bonding portion, and A support body located on the second surface side and a frame joined to the support body via a linear first joint portion, and within a unit length along the longitudinal direction of the second joint portion. The height difference between the highest point and the lowest point in the normal direction of the first surface of the second bonding portion is 5 μm or less.

In an embodiment of the present disclosure, the difference between the width value of the widest portion of the second joint portion and the width value of the narrowest portion of the second joint portion is defined as the second joint portion. The change rate of the width obtained by dividing by the value of the width of the widest portion may be 0% or more and 20% or less.

In an embodiment of the present disclosure, the thickness of the mask may be 5 μm or more and 10 μm or less.

According to an embodiment of the present disclosure, a mask having a first surface and a second surface opposite to the first surface is bonded to the mask via a linear second bonding portion, and A support located on the second surface side, and the highest point in the normal direction of the first surface of the second bonding portion within a unit length along the longitudinal direction of the second bonding portion. The height difference between the lowest point and the lowest point is 5 μm or less.

In an embodiment of the present disclosure, the difference between the width value of the widest portion of the second joint portion and the width value of the narrowest portion of the second joint portion is defined as the second joint portion. The change rate of the width obtained by dividing by the value of the width of the widest portion may be 0% or more and 20% or less.

In an embodiment of the present disclosure, the thickness of the mask may be 5 μm or more and 10 μm or less.

One embodiment of the present disclosure is a method of manufacturing a vapor deposition mask device comprising a vapor deposition mask and a frame attached to the vapor deposition mask, the step of preparing the vapor deposition mask, and the step of preparing the frame. And a step of welding the vapor deposition mask to the frame with a CW laser.

In an embodiment of the present disclosure, the vapor deposition mask may have a thickness of 5 μm or more and 10 μm or less.

One embodiment of the present disclosure is a method of manufacturing a vapor deposition mask device comprising a vapor deposition mask having a mask and a support attached to the mask, and a frame attached to the support, wherein A step of preparing a mask, a step of preparing the support, a step of preparing the frame, a step of welding the mask to the support by a CW laser, and a step of welding the support to the frame. And a method for manufacturing a vapor deposition mask device.

In an embodiment of the present disclosure, the thickness of the mask may be 5 μm or more and 10 μm or less.

One embodiment of the present disclosure is a method of manufacturing a vapor deposition mask comprising a mask and a support attached to the mask, the method comprising: preparing the mask; preparing the support; And a step of welding the mask to the support with a CW laser.

In an embodiment of the present disclosure, the thickness of the mask may be 5 μm or more and 10 μm or less.

According to the present disclosure, the adhesion between the vapor deposition mask and the substrate can be improved.

FIG. 1 is a schematic diagram showing a vapor deposition device including a vapor deposition mask device according to a first embodiment of the present disclosure. 1 is a plan view showing a vapor deposition mask device according to a first embodiment of the present disclosure. It is sectional drawing which shows the organic EL display device manufactured using the vapor deposition mask apparatus shown in FIG. FIG. 3 is an enlarged plan view showing the vapor deposition mask device shown in FIG. 2 (plan view corresponding to the IVA portion in FIG. 2 ). It is a top view showing a modification of the 1st joined part. It is a top view showing a modification of the 1st joined part. It is a top view showing a modification of the 1st joined part. It is a top view showing a modification of the 1st joined part. It is a top view showing a modification of the 1st joined part. It is a top view showing a modification of the 1st joined part. It is sectional drawing which looked at the vapor deposition mask apparatus of FIG. 4A from the VV direction. It is sectional drawing which looked at the vapor deposition mask apparatus of FIG. 2 from the VIA-VIA direction. FIG. 6B is an enlarged cross-sectional view of a first joint portion illustrated in FIG. 6A (a cross-sectional view corresponding to the VIB portion of FIG. 6A). It is a sectional view showing a modification of the 1st joined part. It is a sectional view showing a modification of the 1st joined part. It is a top view which expands and shows the intermediate part of a vapor deposition mask. FIG. 9 is a cross-sectional view of the intermediate portion of FIG. 7 viewed from the VIII-VIII direction. It is a figure which shows the process of forming a resist pattern on a metal plate. It is a figure which shows the 1st surface etching process. It is a figure which shows the 2nd surface etching process. It is a figure which shows the process of removing resin and a resist pattern from a metal plate. It is a figure which shows the process of manufacturing a frame. It is a figure which shows the process of manufacturing a frame. It is a figure which shows the process of welding a vapor deposition mask to a frame. It is a figure which shows the process of welding a vapor deposition mask to a frame. It is a figure which shows the process of vapor-depositing a vapor deposition material on an organic EL substrate. It is a figure which shows the process of vapor-depositing a vapor deposition material on an organic EL substrate. It is a figure which shows the process of vapor-depositing a vapor deposition material on an organic EL substrate. FIG. 6 is a schematic diagram showing a vapor deposition device including a vapor deposition mask device according to a second embodiment of the present disclosure. FIG. 5 is a plan view showing a vapor deposition mask device according to a second embodiment of the present disclosure. FIG. 15 is an enlarged plan view of the vapor deposition mask device shown in FIG. 14 (plan view corresponding to the XV portion in FIG. 14 ). It is sectional drawing which looked at the vapor deposition mask apparatus of FIG. 15 from the XVI-XVI direction. It is sectional drawing which looked at the vapor deposition mask apparatus of FIG. 14 from the XVII-XVII direction. FIG. 15 is an enlarged plan view of the vapor deposition mask device shown in FIG. 14 (a plan view corresponding to a section XVIII in FIG. 14 ). It is sectional drawing which looked at the support body of FIG. 18 from the XIX-XIX direction. It is a figure which shows the process of forming a resist pattern on a metal plate. It is a figure which shows the 1st surface etching process. It is a figure which shows the 2nd surface etching process. It is a figure which shows the process of removing resin and a resist pattern from a metal plate. It is a figure which shows the process of welding a mask to a support body. It is a figure which shows the process of welding a mask to a support body. It is a figure which shows the process of welding a support body to a frame. It is a figure which shows the process of welding a support body to a frame. It is a top view showing one modification of a vapor deposition mask device. It is sectional drawing which shows the example of a changed completely type of vapor deposition mask apparatus, Comprising: It is a figure corresponded to FIG. It is sectional drawing which shows the example of a changed completely type of vapor deposition mask apparatus, Comprising: It is a figure corresponded to FIG. It is a figure which shows the process of manufacturing a support body. It is a figure which shows the process of manufacturing a support body. It is a figure which shows the process of manufacturing a support body. It is sectional drawing which shows the example of a changed completely type of vapor deposition mask apparatus, Comprising: It is a figure corresponded to FIG. It is sectional drawing which shows the example of a changed completely type of vapor deposition mask apparatus, Comprising: It is a figure corresponded to FIG. It is sectional drawing which shows the example of a changed completely type of vapor deposition mask apparatus, Comprising: It is a figure corresponded to FIG.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In addition, in the drawings attached to the present specification, for convenience of illustration and understanding, the scale, the vertical and horizontal dimension ratios, etc. are appropriately changed and exaggerated from the actual ones.

In this specification, for example, the term “plate” is used as having the same meaning as a member that can be called a sheet or a film.

In the present specification, “plan view” refers to a state in which a symmetrical plate-shaped member is viewed from a normal direction orthogonal to the plane direction of the plate-shaped member when viewed as a whole and in a global view. .. For example, “a plate-shaped member has a rectangular shape in a plan view” means that the member has a rectangular shape when viewed from the normal direction.

Further, as used in the present specification, the shape and geometric conditions and physical properties and their degrees are specified, for example, terms such as “parallel”, “orthogonal”, “identical”, “equivalent”, length and angle. In addition, the values of physical properties, etc. shall be construed including the range to the extent that similar functions can be expected without being bound by a strict meaning.

Note that the embodiment of the present disclosure can be combined with other embodiments and modified examples as long as no contradiction occurs. Further, the other embodiments and the other embodiments and the modified examples may be combined within a range in which no contradiction occurs. In addition, the modified examples may be combined within a range in which no contradiction occurs.

Further, in the embodiment of the present disclosure, when a plurality of steps are disclosed regarding a method such as a manufacturing method, other steps not disclosed may be performed between the disclosed steps. Further, the order of the disclosed steps is arbitrary as long as no contradiction occurs.

In this embodiment, an example will be described in which the mask is a vapor deposition mask used for patterning an organic material on a substrate in a desired pattern when manufacturing an organic EL display device. However, the application of the mask is not particularly limited, and the present embodiment can be applied to masks used for various applications. For example, the mask of this embodiment may be used to manufacture a device for displaying or projecting an image or video for expressing virtual reality so-called VR or augmented reality so-called AR.

(First embodiment)
Hereinafter, a first embodiment of the present disclosure will be described with reference to the drawings.

First, a vapor deposition device 90 that performs a vapor deposition process for depositing a vapor deposition material on an object will be described with reference to FIG. As shown in FIG. 1, the vapor deposition device 90 may include a vapor deposition source (for example, a crucible 94), a heater 96, and a vapor deposition mask device 10. Further, the vapor deposition device 90 may further include an evacuation unit for creating a vacuum atmosphere inside the vapor deposition device 90. The crucible 94 contains a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the crucible 94 to evaporate the vapor deposition material 98. The vapor deposition mask device 10 is arranged so as to face the crucible 94.

The vapor deposition mask device 10 will be described below. As shown in FIG. 1, the vapor deposition mask device 10 may include a vapor deposition mask 20 including a mask 30 and a frame 15 attached to the vapor deposition mask 20. In this case, the vapor deposition mask 20 may be supported by the frame 15 in a state in which the vapor deposition mask 20 is pulled in the surface direction of the first surface 30a described later of the mask 30 so as not to bend. Alternatively, the vapor deposition mask 20 may be supported by the frame 15 without being pulled in the surface direction. As shown in FIG. 1, the vapor deposition mask device 10 is arranged in the vapor deposition device 90 such that the mask 30 faces a substrate, which is an object to which the vapor deposition material 98 is attached, such as an organic EL substrate 92. The organic EL substrate 92 is installed on the vapor deposition mask device 10. In the following description, of the surfaces of the mask 30, the surface on the organic EL substrate 92 side is referred to as the first surface 30a, and the surface located on the opposite side of the first surface 30a is referred to as the second surface 30b.

As shown in FIG. 1, the vapor deposition mask device 10 may include a magnet 93 arranged on the surface of the organic EL substrate 92 opposite to the mask 30. By providing the magnet 93, the mask 30 can be attracted to the magnet 93 side by magnetic force and the mask 30 can be brought into close contact with the organic EL substrate 92.

FIG. 2 is a plan view showing a case where the vapor deposition mask device 10 and the organic EL substrate 92 shown in FIG. 1 are viewed from the first surface 30a side of the mask 30. As shown in FIG. 2, the vapor deposition mask device 10 includes a plurality of masks 30 having a substantially rectangular shape in a plan view, and each mask 30 is positioned near a pair of end portions 30e in the longitudinal direction of the mask 30. The first joint portion 19a, which will be described later, may be fixed to the frame 15 by welding.

As shown in FIG. 1, the mask 30 may include a plurality of first through holes 35 penetrating the mask 30. The vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the first through holes 35 of the mask 30. Thereby, the vapor deposition material 98 can be formed on the surface of the organic EL substrate 92 in a desired pattern corresponding to the position of the first through hole 35 of the mask 30.

FIG. 3 is a sectional view showing an organic EL display device 100 manufactured using the vapor deposition device 90 of FIG. The organic EL display device 100 may include a substrate to be vapor-deposited (organic EL substrate) 92 and pixels that are provided in a pattern and include the vapor deposition material 98. Note that in the organic EL display device 100 of FIG. 3, electrodes and the like for applying a voltage to pixels including the vapor deposition material 98 are omitted. Further, after the vapor deposition step of providing the vapor deposition material 98 in a pattern on the organic EL substrate 92, the organic EL display device 100 of FIG. 3 may be further provided with other components of the organic EL display device. Therefore, the organic EL display device 100 of FIG. 3 can also be called an intermediate body of the organic EL display device.

In addition, when it is desired to perform color display with a plurality of colors, the vapor deposition devices 90 on which the masks 30 corresponding to the respective colors are mounted are prepared, and the organic EL substrate 92 is sequentially loaded into the vapor deposition devices 90. Thereby, for example, the organic light emitting material for red, the organic light emitting material for green, and the organic light emitting material for blue can be vapor-deposited on the organic EL substrate 92 in order.

By the way, the vapor deposition process may be performed inside the vapor deposition apparatus 90 having a high temperature atmosphere. In this case, during the vapor deposition process, the mask 30, the frame 15, and the organic EL substrate 92 held inside the vapor deposition device 90 are also heated. At this time, the mask 30, the frame 15, and the organic EL substrate 92 exhibit the behavior of dimensional change based on their respective thermal expansion coefficients. In this case, when the mask 30 or the frame 15 and the organic EL substrate 92 have large thermal expansion coefficients, a positional deviation occurs due to a difference in dimensional changes between them, and as a result, vapor deposition attached on the organic EL substrate 92. The dimensional accuracy and positional accuracy of the material will be reduced.

In order to solve such a problem, it is preferable that the thermal expansion coefficient of the mask 30 and the frame 15 is equal to the thermal expansion coefficient of the organic EL substrate 92. For example, when a glass substrate is used as the organic EL substrate 92, an iron alloy containing nickel can be used as the main material of the mask 30 and the frame 15. The iron alloy may further contain cobalt in addition to nickel. For example, as the material of the metal plate constituting the mask 30, the total content of nickel and cobalt is 30% by mass or more and 50% by mass or less, and the content of cobalt is 0% by mass or more and 6% by mass or less. Certain iron alloys can be used. Specific examples of nickel or an iron alloy containing nickel and cobalt include Invar materials containing 34% by mass or more and 38% by mass or less of nickel, and super alloys containing cobalt in addition to 30% by mass or more and 34% by mass or less of nickel. Examples thereof include an Invar material and a low thermal expansion Fe—Ni-based plating alloy containing 48% by mass or more and 54% by mass or less of nickel.

When the temperature of the mask 30, the frame 15 and the organic EL substrate 92 does not reach a high temperature during the vapor deposition process, the thermal expansion coefficient of the mask 30 and the frame 15 is equal to the thermal expansion coefficient of the organic EL substrate 92. There is no particular need to set the value of. In this case, a material other than the above iron alloy may be used as the material forming the mask 30. For example, an iron alloy other than the above-mentioned nickel-containing iron alloy such as an iron alloy containing chromium may be used. As the iron alloy containing chromium, for example, an iron alloy so-called stainless steel can be used. Further, metals or alloys other than iron alloys such as nickel and nickel-cobalt alloys may be used.

Next, the vapor deposition mask 20 according to the present embodiment will be described in detail. The vapor deposition mask 20 according to the present embodiment is composed of the mask 30 as described above. As shown in FIG. 2, the mask 30 includes a pair of ears 17 that form a pair of ends 30 e in the longitudinal direction of the mask 30, and an intermediate portion 18 that is located between the pair of ears 17. May be.

First, the ear section 17 will be described in detail. The ear portion 17 is a portion of the mask 30 fixed to the frame 15. In the present embodiment, the ears 17 may be fixed to the frame 15 by CW (continuous wave) laser welding on the second surface 30b side. In the present embodiment, the portions of the ears 17 and the frame 15 that are joined to each other by welding are referred to as the first joining portions 19a.

The first joint portion 19a formed on the ear portion 17 may extend linearly along the width direction of the mask 30, for example, as shown in FIG. 4A. Such a first bonding portion 19a is formed, for example, by irradiating the ear portion 17 with a CW laser (that is, a continuous wave laser) at each position along the width direction of the mask 30. In this case, since the first joint portion 19a extends linearly along the width direction of the mask 30, the welding strength can be increased.

Further, in this case, the difference between the width value of the portion where the width W1 of the first joint portion 19a is the widest and the width value of the portion where the width W1 of the first joint portion 19a is the narrowest is calculated as The change rate of the width W1 obtained by dividing W1 by the value of the width of the widest portion may be 0% or more and 20% or less. Thereby, in the cleaning step of cleaning the mask 30, it is possible to suppress the problem that the cleaning liquid enters the first bonding portion 19a that bonds the mask 30 and the frame 15 to each other. That is, as can be seen in the case of using a pulsed laser that emits laser light intermittently, the case where the contour of the joint is formed by overlapping a plurality of circular shapes (the phantom line (2 (See the dotted chain line)), the recess A1 (the area indicated by satin in FIG. 4A) into which the cleaning liquid can enter between the portion having the narrowest width W1n of the joint and the portion having the widest width W1b of the joint. Can be formed. On the other hand, when the change rate of the width W1 is 0% or more and 20% or less, it is possible to suppress the formation of the recess A1 into which the cleaning liquid can enter, in the first bonding portion 19a. As a result, it is possible to prevent the cleaning liquid from remaining on the cleaned mask 30. Therefore, when the vapor deposition process is performed using the cleaned mask 30, it is possible to prevent the cleaning liquid from evaporating in the vapor deposition device 90 and the desired degree of vacuum not being obtained. Further, it is possible to prevent the vaporization of the cleaning liquid in the vapor deposition device 90 from making it difficult to vapor deposit the vapor deposition material 98 at a desired position on the organic EL substrate 92. Further, in this case, the range of the change rate of the width W1 is preferably 0% or more and 10% or less, and more preferably 0% or more and 5% or less. In the present specification, the “width W1 of the first joint portion 19a” refers to the length in the direction orthogonal to the scanning direction of the laser light of the CW laser forming the first joint portion 19a. In the illustrated example, the scanning direction of the laser light is the left-right direction of FIG. 4A, and the width W1 of the first bonding portion 19a indicates the length in the vertical direction of FIG. 4A.

It should be noted that the difference between the width value of the portion where the width W1 of the first joint portion 19a is the widest and the width value of the portion where the width W1 of the first joint portion 19a is the narrowest is calculated as follows: The change rate of the width W1 obtained by dividing the width of the widest part may be 0% or more, 1% or more, or 3% or more. The rate of change of the width W1 may be 20% or less, 10% or less, or 5% or less. The range of the rate of change of the width W1 may be defined by a combination of any one of the plurality of upper limit candidate values described above and any one of the plurality of lower limit candidate values described above. For example, the range of the rate of change of the width W1 may be 0% or more and 20% or less, 1% or more and 10% or less, or 3% or more and 5% or less. Further, the range of the rate of change of the width W1 may be determined by a combination of any two of the above-described upper limit candidate values. For example, the range of the rate of change of the width W1 may be 5% or more and 20% or less, 5% or more and 10% or less, or 10% or more and 20% or less. In addition, the range of the rate of change of the width W1 may be determined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the rate of change of the width W1 may be 0% or more and 3% or less, 0% or more and 1% or less, or 1% or more and 3% or less.

Note that the arrangement and shape of the first joint portion 19a in plan view are not particularly limited. For example, as shown in FIG. 4B, a plurality of first bonding portions 19a that are arranged apart from each other may be formed along the width direction of the mask 30. In the illustrated example, the two first bonding portions 19 a are arranged along the width direction of the mask 30 so as to be separated from each other. In this case, for example, the lengths of the respective first joint portions 19a may be different from each other. Even in this case, since the plurality of first joint portions 19a are formed, the welding strength can be increased.

Further, for example, as shown in FIG. 4C, the linear first bonding portions 19a may be formed in multiple rows along the width direction of the mask 30. In the illustrated example, the first bonding portions 19 a are formed in two rows along the width direction of the mask 30. The first bonding portions 19a may be formed in three rows or four rows along the width direction of the mask 30. In this case, since the linear first joint portions 19a are formed in multiple rows along the width direction of the mask 30, the welding strength can be further increased.

Further, for example, as shown in FIG. 4D, the first bonding portions 19a formed in multiple rows along the width direction of the mask 30 may overlap each other in a plan view. Also in this case, since the linear first joint portions 19a are formed in multiple rows along the width direction of the mask 30, the welding strength can be increased.

Further, for example, as shown in FIG. 4E, the lengths of the first joining portions 19a formed in multiple rows may be different. In this case, the welding strength can be effectively increased for the portion where the welding strength is desired to be increased. In this case, when obtaining the change rate of the width W1 of the first joint portion 19a described above, the width W11 of the one first joint portion 191a formed by one scanning of the laser light by the CW laser, and the laser The width W12 of the other first bonding portion 192a formed by another scanning of light can be individually considered.

Further, for example, as shown in FIG. 4F, the contour of the linear first joint portion 19a may be curved. Also in this case, since the first joint portion 19a extends linearly along the width direction of the mask 30, the welding strength can be increased.

Furthermore, for example, as shown in FIG. 4G, the first bonding portion 19a may be formed in a frame shape along the width direction of the mask 30. Also in this case, since the first joint portion 19a is formed along the width direction of the mask 30, the welding strength can be increased.

Further, as shown in FIG. 5, within the unit length (1.0 cm) along the longitudinal direction of the first joint portion 19a, the maximum in the normal direction N of the first surface 30a of the first joint portion 19a. The height difference H1 between the point and the lowest point may be 5 μm or less. Thereby, the adhesiveness between the organic EL substrate 92 and the mask 30 can be improved. That is, as can be seen when a pulsed laser that intermittently emits laser light is used, the protrusion B1 (the hatched area in FIG. 4A and the phantom line in FIG. In comparison with the case where the height difference H1 between the highest point and the lowest point in the normal direction N of the first surface 30a of the joint becomes larger than 5 μm due to the formation of the two-dot chain line). As a result, it is possible to suppress the problem that the adhesiveness between the organic EL substrate 92 and the mask 30 is deteriorated. Therefore, when performing the vapor deposition process using the mask 30, the vapor deposition material 98 can be vapor deposited at a desired position on the organic EL substrate 92. Further, since the height difference H1 is 5 μm or less, it is possible to prevent the organic EL substrate 92 from being scratched when the organic EL substrate 92 is placed on the mask 30, and at the same time, to prevent the organic EL substrate 92 from being scratched. It is possible to suppress the occurrence of cracks in the. In this case, the range of the height difference H1 is preferably 3 μm or less, more preferably 2 μm or less. When a pulsed laser that intermittently irradiates laser light is used, it is generally considered that the spot diameter of the laser light is about 2 mm or more and 3 mm or less. Therefore, when a pulsed laser that intermittently emits laser light is used, within the unit length (1.0 cm) along the longitudinal direction of the joint, the normal direction of the first surface 30a of the joint. The height difference H1 between the highest point and the lowest point at N can be greater than 5 μm.

The height difference H1 between the highest point and the lowest point of the first surface 30a of the first joint portion 19a in the normal direction N may be 0 μm or more, or may be 0.5 μm or more. It may be 1 μm or more. The height difference H1 may be 5 μm or less, 3 μm or less, or 2 μm or less. The range of the height difference H1 may be defined by a combination of any one of the plurality of upper limit candidate values described above and any one of the plurality of lower limit candidate values described above. For example, the range of the height difference H1 may be 0 μm or more and 5 μm or less, may be 0.5 μm or more and 3 μm or less, or may be 1 μm or more and 2 μm or less. Further, the range of the height difference H1 may be defined by a combination of any two of the above-described upper limit candidate values. For example, the range of the height difference H1 may be 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, or 3 μm or more and 5 μm or less. Further, the range of the height difference H1 may be defined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the height difference H1 may be 0 μm or more and 1 μm or less, 0 μm or more and 0.5 μm or less, or 0.5 μm or more and 1 μm or less.

Further, as shown in FIG. 6A, the first joint portion 19a extends from the first surface 30a of the ear portion 17 to the frame 15 via the second surface 30b. The first joint portion 19a is a portion of the ear portion 17 and the frame 15 of the mask 30 that is melted during welding and is solidified. The portion of the ear portion 17 extending from the first surface 30a to the second surface 30b and the frame 15 are the same. Part of. The first bonding portion 19a may be formed so as to project from the first surface 30a of the mask 30, for example, as shown in FIG. 6B.

Further, as shown in FIG. 6C, the first bonding portion 19a may be formed such that the upper surface 193a of the first bonding portion 19a is located on the same plane as the first surface 30a of the mask 30. Further, as shown in FIG. 6D, the first bonding portion 19a may be formed so as to be recessed toward the second surface 30b side with respect to the first surface 30a of the mask 30. In these cases, the adhesion between the mask 30 and the organic EL substrate 92 can be improved when the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92.

Next, the intermediate portion 18 of the mask 30 will be described. As shown in FIG. 6A, the intermediate portion 18 includes an effective area 22 in which the first through hole 35 extending from the first surface 30a to the second surface 30b is formed, and a peripheral area 23 surrounding the effective area 22. You may stay. The peripheral region 23 is a region for supporting the effective region 22, and is not a region through which a vapor deposition material intended to be vapor deposited on the organic EL substrate 92 passes. For example, the effective area 22 is an area of the mask 30 that faces the display area of the organic EL substrate 92.

As shown in FIG. 2, the intermediate portion 18 may include a plurality of effective regions 22 arranged at predetermined intervals along the longitudinal direction of the mask 30. One effective area 22 corresponds to the display area of one organic EL display device 100. Therefore, according to the vapor deposition mask device 10 shown in FIG. 1, multifaceted vapor deposition of the organic EL display device 100 is possible.

The effective area 22 may have, for example, a substantially quadrangular contour in a plan view, or more accurately, a substantially rectangular contour in a plan view. Although not shown, each effective area 22 can have contours of various shapes depending on the shape of the display area of the organic EL substrate 92. For example, each effective area 22 may have a circular or elliptical contour, or may have a polygonal shape such as a hexagon or an octagon. In addition, each effective region 22 may have a shape different from each other, and may have, for example, a circular shape, an elliptical shape, or a polygonal shape such as a hexagon or an octagon.

Hereinafter, the intermediate portion 18 will be described in detail. As shown in FIG. 7, the plurality of first through holes 35 may be regularly arranged in the effective region 22 at a predetermined pitch along two directions orthogonal to each other.

In addition, as shown in FIG. 8, the plurality of first through holes 35 penetrate from the first surface 30a of the mask 30 to the second surface 30b. In the illustrated example, as will be described later in detail, the first recess 31 is formed by etching in the first surface 64a of the metal plate 64 which is one side in the normal direction N of the first surface 30a of the mask 30, The second recess 32 is formed in the second surface 64b of the metal plate 64 which is the other side in the normal direction N. The first recess 31 is connected to the second recess 32, so that the second recess 32 and the first recess 31 are formed so as to communicate with each other. The first through hole 35 includes a second recess 32 and a first recess 31 connected to the second recess 32.

As shown in FIG. 8, on the first surface 30a side of the mask 30, two adjacent first through holes 35 may be separated from each other along the first surface 64a of the metal plate 64. Also on the second surface 30b side of the mask 30, two adjacent second recesses 32 may be separated from each other along the second surface 64b of the metal plate 64. That is, the second surface 64b of the metal plate 64 may remain between the two adjacent second recesses 32. In the following description, the portion of the effective area 22 of the second surface 64b of the metal plate 64 that remains without being etched is also referred to as the top portion 43. By manufacturing the mask 30 so that the top portion 43 remains, the mask 30 can have sufficient strength. This can prevent the mask 30 from being damaged during transportation, for example. If the width β of the top portion 43 is too large, a shadow may be generated in the vapor deposition process, which may reduce the utilization efficiency of the vapor deposition material 98. Therefore, the mask 30 is preferably manufactured so that the width β of the top portion 43 does not become excessively large.

When the vapor deposition mask device 10 is housed in the vapor deposition device 90 as shown in FIG. 1, the first surface 30a of the mask 30 faces the organic EL substrate 92 as shown by the chain double-dashed line in FIG. The second surface 30b of 30 is located on the side of the crucible 94 holding the vapor deposition material 98. Therefore, the vapor deposition material 98 passes through the second recess 32 whose opening area is gradually reduced and adheres to the organic EL substrate 92. As shown by the arrow from the second surface 30b side to the first surface 30a in FIG. 8, the vapor deposition material 98 is directed from the crucible 94 toward the organic EL substrate 92 along the normal direction N of the first surface 30a of the mask 30. In addition to the above movement, the movement may occur in a direction largely inclined with respect to the normal direction N. At this time, if the thickness of the mask 30 is large, the vapor deposition material 98 that moves obliquely tends to be caught on the top portion 43, the wall surface 32a of the second recess 32, or the wall surface 31a of the first recess 31, and as a result, the first The ratio of the vapor deposition material 98 that cannot pass through the through hole 35 increases. Therefore, in order to improve the utilization efficiency of the vapor deposition material 98, it is preferable to reduce the thickness t1 of the mask 30 and thereby reduce the height of the wall surface 32a of the second recess 32 and the wall surface 31a of the first recess 31. it is conceivable that. That is, it can be said that it is preferable to use, as the metal plate 64 for forming the mask 30, a metal plate 64 having a thickness t1 as small as possible within a range in which the strength of the mask 30 can be secured. Considering this point, in the present embodiment, the thickness t1 of the mask 30 is, for example, 30 μm or less, 25 μm or less, preferably 20 μm or less, and more preferably 10 μm or less. On the other hand, if the thickness t1 of the mask 30 is too small, the strength of the mask 30 is reduced, and the mask 30 is likely to be damaged or deformed. Considering this point, the thickness t1 of the mask 30 is preferably 5 μm or more. The thickness t1 of the mask 30 may be 8 μm or more, 10 μm or more, 12 μm or more, 13 μm or more, or 15 μm or more. The range of the thickness t1 of the mask 30 may be determined by a combination of any one of the plurality of upper limit candidate values described above and any one of the plurality of lower limit candidate values described above. For example, the range of the thickness t1 of the mask 30 may be 5 μm or more and 10 μm or less, 5 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, or 10 μm or more and 20 μm or less. , 13 μm or more and 20 μm or less, or 15 μm or more and 20 μm or less. Further, the range of the thickness t1 of the mask 30 may be determined by a combination of any two of the above-described upper limit candidate values. For example, the range of the thickness t1 of the mask 30 may be 20 μm or more and 25 μm or less. Further, the range of the thickness t1 of the mask 30 may be determined by a combination of any two of the above-described lower limit candidate values. For example, the range of the thickness t1 of the mask 30 may be 13 μm or more and 15 μm or less. The thickness t1 is the thickness of the peripheral region 23, that is, the thickness of the portion of the mask 30 where the first recess 31 and the second recess 32 are not formed. Therefore, it can be said that the thickness t1 is the thickness of the metal plate 64.

In FIG. 8, a straight line M passing through the connection portion 41, which is a portion having the smallest opening area of the first through hole 35, and another arbitrary position on the wall surface 32 a of the second recess 32 is the first line of the mask 30. The minimum angle formed by the surface 30a with respect to the normal direction N is represented by reference sign θ1. In order to make the vapor deposition material 98 moving obliquely reach the organic EL substrate 92 as much as possible without reaching the wall surface 32a, it is advantageous to increase the angle θ1. In order to increase the angle θ1, it is effective to decrease the thickness β of the mask 30 and also decrease the width β of the top portion 43 described above.

In FIG. 8, the symbol α represents the width of a portion (hereinafter, also referred to as a rib portion) of the effective region 22 of the first surface 64a of the metal plate 64 that remains without being etched. The width α of the rib portion and the dimension r of the penetrating portion 42 are appropriately determined according to the dimension of the organic EL display device and the number of display pixels. For example, the width α of the rib portion may be 5 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. Further, the width α of the rib portion may be 40 μm or less, 35 μm or less, 30 μm or less, or 25 μm or less. The range of the width α of the rib portion may be defined by a combination of any one of the plurality of upper limit candidate values and any one of the plurality of lower limit candidate values. For example, the range of the width α of the rib portion may be 5 μm or more and 40 μm or less, 10 μm or more and 35 μm or less, 15 μm or more and 30 μm or less, or 20 μm or more and 25 μm or less. .. Further, the range of the width α of the rib portion may be defined by a combination of any two of the above-described upper limit candidate values. For example, the range of the width α of the rib portion may be 30 μm or more and 35 μm or less. Further, the range of the width α of the rib portion may be determined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the width α of the rib portion may be 10 μm or more and 15 μm or less. The dimension r of the penetrating portion 42 may be 10 μm or more, 15 μm or more, 20 μm or more, 25 μm or more, 30 μm or more, 35 μm or more. It may be. The dimension r of the penetrating part 42 may be 60 μm or less, 55 μm or less, 50 μm or less, 45 μm or less, or 40 μm or less. The range of the dimension r of the penetrating part 42 may be determined by a combination of any one of the above-described upper limit candidate values and any one of the above-mentioned plurality of lower limit candidate values. For example, the range of the dimension r of the penetrating portion 42 may be 10 μm or more and 60 μm or less, 15 μm or more and 55 μm or less, 20 μm or more and 50 μm or less, or 25 μm or more and 45 μm or less. It may be 30 μm or more and 40 μm or less. Further, the range of the dimension r of the penetrating part 42 may be determined by a combination of any two of the above-described upper limit candidate values. For example, the range of the dimension r of the penetrating portion 42 may be 45 μm or more and 55 μm or less. Further, the range of the dimension r of the penetrating portion 42 may be determined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the dimension r of the penetration portion 42 may be 30 μm or more and 35 μm or less.

7 and 8 show an example in which the second surface 64b of the metal plate 64 remains between the two adjacent second recesses 32, the present invention is not limited to this. Although not shown, etching may be performed so that two adjacent second recesses 32 are connected. That is, there may be a place where the second surface 64b of the metal plate 64 does not remain between two adjacent second recesses 32.

Next, the frame 15 will be described in detail. As shown in FIG. 2, the frame 15 is formed in a substantially rectangular frame shape in a plan view, and the frame 15 may be provided with an opening 15a overlapping the effective area 22 of the mask 30 in a plan view. .. Further, the frame 15 may be bonded to the mask 30 via the linear first bonding portion 19a as described above, and may be located on the second surface 30b side of the mask 30. In the present embodiment, the contour that defines the opening 15 a in plan view may surround all of the contour that defines the effective region 22. During vapor deposition, the vapor deposition material 98 vaporized from the crucible 94 reaches the mask 30 through the opening 15 a of the frame 15.

Further, the frame 15 may have a size larger than that of the mask 30 in a plan view, and the contour defining the frame 15 may surround the contour defining the mask 30. The frame 15 may be attached to each mask 30 such that a pair of opposing sides of each side of the frame 15 correspond to the ears 17 of each mask 30. In this way, the plurality of masks 30 may be attached to the frame 15.

Next, a method of manufacturing the vapor deposition mask device 10 will be described with reference to FIGS. 9A to 11B.

First, the mask 30 is prepared. In the present embodiment, a large number of first through holes 35 corresponding to the plurality of masks 30 are formed in the metal plate 64. In other words, a plurality of masks 30 are assigned to the metal plate 64. Then, the portion of the metal plate 64 in which the plurality of first through holes 35 corresponding to one mask 30 is formed is separated from the metal plate 64. In this way, the sheet-shaped mask 30 can be obtained.

At this time, first, a resist film containing a photosensitive resist material is formed on the first surface 64a and the second surface 64b of the metal plate 64. Then, the resist film is exposed and developed. As a result, as shown in FIG. 9A, the first resist pattern 65a can be formed on the first surface 64a of the metal plate 64, and the second resist pattern 65b can be formed on the second surface 64b of the metal plate 64. ..

Next, as shown in FIG. 9B, a first surface etching step of etching a region of the first surface 64a of the metal plate 64 which is not covered with the first resist pattern 65a with the first etching solution is performed. .. As a result, a large number of first recesses 31 are formed on the first surface 64a of the metal plate 64. As the first etching solution, for example, a solution containing ferric chloride solution and hydrochloric acid is used.

Next, as shown in FIG. 9C, a region of the second surface 64b of the metal plate 64 that is not covered by the second resist pattern 65b is etched to form a second recess 32 in the second surface 64b. An etching process is performed. The second surface etching step is performed until the first concave portion 31 and the second concave portion 32 communicate with each other, thereby forming the first through hole 35. As the second etching solution, a solution containing, for example, a ferric chloride solution and hydrochloric acid is used as in the above-described first etching solution. During the second surface etching step, as shown in FIG. 9C, the first recess 31 may be covered with the resin 69 having resistance to the second etching liquid.

Then, as shown in FIG. 9D, the resin 69 is removed from the metal plate 64. The resin 69 can be removed by using, for example, an alkaline stripping solution. When the alkaline stripping solution is used, the resist patterns 65a and 65b are removed at the same time as the resin 69, as shown in FIG. 9D. After removing the resin 69, the resist patterns 65a and 65b may be removed separately from the resin 69 by using a peeling liquid different from the peeling liquid for peeling the resin 69.

Then, the mask 30 can be obtained by separating the portion of the metal plate 64 in which the plurality of first through holes 35 corresponding to one mask 30 are formed from the metal plate 64.

Further, in parallel with the preparation of the mask 30, the frame 15 is prepared. At this time, first, as shown in FIG. 10A, the metal plate 150 is prepared.

Next, the metal plate 150 is subjected to machining such as cutting to obtain a frame 15 having an opening 15a as shown in FIG. 10B. In this way, the frame 15 is manufactured. The frame 15 may be manufactured using a mold or a 3D printer.

Next, the mask 30 obtained as described above is welded to the frame 15 by a CW laser (that is, a continuous wave laser). As a result, the first surface of the first bonding portion 19a is within the unit length along the longitudinal direction of the first bonding portion 19a, as compared with the case of using a pulsed laser that intermittently emits laser light. The height difference H1 (see FIG. 5) between the highest point and the lowest point in the normal direction N of 30a can be reduced. In addition, by using the CW laser, the width W1 (see FIG. 4A) of the first bonding portion 19a is larger than the value of the width of the widest portion, as compared with the case of using the pulse laser that intermittently emits the laser light. , The change rate of the width W1 obtained by dividing the difference between the width value of the narrowest portion of the first joint portion 19a and the width W1 of the widest portion of the width portion W1 of the first joint portion 19a. Can be made smaller.

In this case, first, the mask 30 is placed on the frame 15, as shown in FIG. 11A.

Next, as shown in FIG. 11B, laser light La is emitted from the first surface 30a side of the mask 30, for example, by a laser device (not shown). As a result, a part of the ears 17 of the mask 30 and a part of the frame 15 are melted. At this time, in order to suppress the occurrence of bending of the mask 30 and to adjust the position of the effective region 22 of the mask 30, the mask 30 is pulled in the surface direction of the first surface 30a while the mask 30 is pulled. The frame 15 and the frame 15 may be joined to each other.

At this time, as the laser beam La, for example, a laser beam including YAG (yttrium-aluminum-garnet) generated by a YAG laser device and a crystal in which Nd (neodymium) is added can be used. .. In this case, laser light La having a wavelength of about 1064 nm is generated as the fundamental wave. Further, by passing the fundamental wave through the nonlinear optical crystal, a second harmonic wave having a wavelength of about 532 nm is generated. Further, by passing the fundamental wave and the second harmonic through a nonlinear optical crystal, a third harmonic having a wavelength of about 355 nm is generated.

Further, the third harmonic of the YAG laser light is easily absorbed by the iron alloy containing nickel. Therefore, when the ears 17 and the frame 15 of the mask 30 contain an iron alloy containing nickel, in order to efficiently melt a part of the ears 17 and the frame 15 of the mask 30, the laser light is the first YAG laser light. It is preferable to include 3 harmonics.

When the irradiation of the laser beam La is finished, the temperature of the melted portion is lowered and solidified to become the first joint portion 19a. As a result, the ear portion 17 of the mask 30 and the frame 15 are joined to each other by the first joining portion 19a. In this way, the vapor deposition mask device 10 including the frame 15 and the mask 30 bonded to the frame 15 by the first bonding portion 19a can be obtained.

Next, a vapor deposition method of vapor deposition material for vapor depositing the vapor deposition material 98 on the organic EL substrate 92 using the vapor deposition mask device 10 obtained by the above-described steps will be described with reference to FIGS. 12A to 12C.

First, the vapor deposition mask device 10 obtained by the steps described above is prepared. That is, as shown in FIG. 12A, the vapor deposition device 90 including the vapor deposition mask device 10, the crucible 94 containing the vapor deposition material 98, and the heater 96 is prepared.

Next, as shown in FIG. 12B, the organic EL substrate 92 is placed on the mask 30. In this case, for example, the alignment mark (not shown) of the organic EL substrate 92 and the alignment mark (not shown) of the mask 30 are directly observed, and the organic EL substrate 92 is positioned so that the alignment marks overlap each other. Alternatively, the central position coordinates of the alignment mark of the organic EL substrate 92 and the central position coordinate of the alignment mark of the mask 30 are separately measured by a control device (not shown) so that these central position coordinates have a predetermined positional relationship. Alternatively, the organic EL substrate 92 may be positioned.

Here, in the present embodiment, in the unit length (1.0 cm) along the longitudinal direction of the first joint portion 19a, in the normal direction N of the first surface 30a of the first joint portion 19a. The height difference H1 between the highest point and the lowest point may be 5 μm or less. Thereby, the adhesiveness between the organic EL substrate 92 and the mask 30 can be improved. Therefore, when performing the vapor deposition process using the mask 30, the vapor deposition material 98 can be vapor deposited at a desired position on the organic EL substrate 92. Further, since the height difference H1 is 5 μm or less, it is possible to prevent the organic EL substrate 92 from being scratched when the organic EL substrate 92 is placed on the mask 30, and at the same time, to prevent the organic EL substrate 92 from being scratched. It is possible to suppress the occurrence of cracks in the.

Next, a vapor deposition material 98 is vapor deposited on the organic EL substrate 92 placed on the mask 30. At this time, for example, as shown in FIG. 12C, the magnet 93 is arranged on the surface of the organic EL substrate 92 opposite to the mask 30. By providing the magnet 93 in this way, the mask 30 can be attracted to the magnet 93 side by magnetic force, and the mask 30 can be brought into close contact with the organic EL substrate 92. Next, the inside of the vapor deposition device 90 is exhausted by an exhaust means (not shown) so that the interior of the vapor deposition device 90 is in a high vacuum state. Next, the heater 96 heats the crucible 94 to evaporate the vapor deposition material 98. Then, the vapor deposition material 98 that has evaporated from the crucible 94 and reached the vapor deposition mask device 10 adheres to the organic EL substrate 92 through the first through holes 35 of the mask 30 (see FIG. 1 ).

In this way, the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 in a desired pattern corresponding to the position of the first through hole 35 of the mask 30.

As described above, according to the present embodiment, within the unit length along the longitudinal direction of the first joint portion 19a, the maximum in the normal direction N of the first surface 30a of the first joint portion 19a. The height difference H1 between the point and the lowest point is 5 μm or less. Thereby, the adhesiveness between the organic EL substrate 92 and the mask 30 can be improved. Therefore, when performing the vapor deposition process using the mask 30, the vapor deposition material 98 can be vapor deposited at a desired position on the organic EL substrate 92.

Further, according to the present embodiment, the difference between the width value of the portion where the width W1 of the first joint portion 19a is the widest and the width value of the portion where the width W1 of the first joint portion 19a is the narrowest is The change rate of the width obtained by dividing the width W1 of the one joint portion 19a by the value of the width of the widest portion is 0% or more and 20% or less. Accordingly, it is possible to suppress the formation of the recess A1 (see FIG. 4A) into which the cleaning liquid can enter, in the first joint portion 19a. Therefore, it is possible to suppress the problem that the cleaning liquid remains on the cleaned mask 30. As a result, when the vapor deposition process is performed using the cleaned mask 30, it is possible to prevent the cleaning liquid from evaporating in the vapor deposition device 90 and the desired degree of vacuum not being obtained. Further, it is possible to prevent the vaporization of the cleaning liquid in the vapor deposition device 90 from making it difficult to vapor deposit the vapor deposition material 98 at a desired position on the organic EL substrate 92.

Further, according to the present embodiment, the mask 30 (that is, the vapor deposition mask 20) is welded to the frame 15 by the CW laser. This makes it possible to easily form the first joint portion 19a having the above-described shape.

(Second embodiment)
Next, a second embodiment will be described with reference to FIGS. 13 to 22B. In the second embodiment shown in FIGS. 13 to 22B, the vapor deposition mask 20 has a mask 30 and a support body 40 attached to the mask 30, and other configurations are as described above. The configuration is substantially the same as that shown in FIGS. 1 to 12C. 13 to 22B, the same parts as those of the first embodiment shown in FIGS. 1 to 12C are designated by the same reference numerals, and detailed description thereof will be omitted.

As shown in FIGS. 13 and 14, the vapor deposition mask 20 may include a mask 30 and a support body 40 attached to the mask 30. Further, as shown in FIG. 14, the support 40 may be bonded to the mask 30 via the linear second bonding portion 19b and may be located on the second surface 30b side of the mask 30.

The second joint portion 19b that joins the mask 30 and the support 40 to each other may extend linearly along the width direction of the mask 30, as shown in FIGS. 14 and 15, for example. Such a second bonding portion 19b is formed, for example, by irradiating the ear portion 17 with a CW laser (that is, a continuous wave laser) at each position along the width direction of the mask 30. In this case, since the second joint portion 19b extends linearly along the width direction of the mask 30, the welding strength can be increased.

Further, in this case, the difference between the width value of the portion where the width W2 of the second joint portion 19b is the widest and the width value of the portion where the width W2 of the second joint portion 19b is the narrowest is calculated as follows. The rate of change of the width W2 obtained by dividing the width W2 by the value of the width of the widest portion may be 0% or more and 20% or less. Thereby, in the cleaning process of cleaning the vapor deposition mask 20, it is possible to suppress the problem that the cleaning liquid enters the second bonding portion 19b where the mask 30 and the support body 40 are bonded to each other. That is, as can be seen in the case of using a pulsed laser that emits laser light intermittently, the case where the contour of the joint is formed by superimposing a plurality of circular shapes (the phantom line (two (See the dotted chain line)), a recess A2 (the area indicated by satin in FIG. 15) into which the cleaning liquid can enter between the portion having the narrowest width W2n of the joint and the portion having the widest width W2b of the joint. Can be formed. On the other hand, when the change rate of the width W2 is 0% or more and 20% or less, it is possible to suppress the formation of the recess A2 into which the cleaning liquid can enter, in the second bonding portion 19b. As a result, it is possible to prevent the cleaning liquid from remaining on the cleaned vapor deposition mask 20. Therefore, when the vapor deposition process is performed using the cleaned vapor deposition mask 20, it is possible to prevent the cleaning liquid from evaporating in the vapor deposition apparatus 90 to prevent a desired degree of vacuum from being obtained. Further, it is possible to prevent the vaporization of the cleaning liquid in the vapor deposition device 90 from making it difficult to vapor deposit the vapor deposition material 98 at a desired position on the organic EL substrate 92. In this case, the range of the rate of change of the width W2 is preferably 0% or more and 10% or less, and more preferably 0% or more and 5% or less. In the present specification, the “width W2 of the second joint portion 19b” refers to the length in the direction orthogonal to the scanning direction of the laser light of the CW laser that forms the second joint portion 19b. In the illustrated example, the scanning direction of the laser light is the left-right direction of FIG. 15, and the width W2 of the second bonding portion 19b indicates the length in the vertical direction of FIG.

It should be noted that the difference between the value of the width of the portion where the width W2 of the second joint portion 19b is the widest and the value of the width of the portion where the width W2 of the second joint portion 19b is the narrowest is calculated as follows: The change rate of the width W2 obtained by dividing the width of the widest part may be 0% or more, 1% or more, or 3% or more. The rate of change of the width W2 may be 20% or less, 10% or less, or 5% or less. The range of the rate of change of the width W2 may be defined by a combination of any one of the plurality of upper limit candidate values described above and any one of the plurality of lower limit candidate values described above. For example, the range of the rate of change of the width W2 may be 0% or more and 20% or less, 1% or more and 10% or less, or 3% or more and 5% or less. Further, the range of the rate of change of the width W2 may be determined by a combination of any two of the above-described upper limit candidate values. For example, the range of the rate of change of the width W2 may be 5% or more and 20% or less, 5% or more and 10% or less, or 10% or more and 20% or less. Further, the range of the rate of change of the width W2 may be determined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the change rate of the width W2 may be 0% or more and 3% or less, 0% or more and 1% or less, or 1% or more and 3% or less.

The arrangement and shape of the second joint portion 19b in plan view are not particularly limited. The second joint portion 19b may be arranged, for example, similarly to the first joint portion 19a shown in FIGS. 4B to 4G, or may have the same shape.

In addition, as shown in FIG. 16, within the unit length (1.0 cm) along the longitudinal direction of the second joint portion 19b, the maximum in the normal direction N of the first surface 30a of the second joint portion 19b. The height difference H2 between the point and the lowest point may be 5 μm or less. Thereby, the adhesiveness between the organic EL substrate 92 and the mask 30 can be improved. That is, as can be seen when using a pulsed laser that intermittently irradiates a laser beam, the protrusion B2 (the hatched area in FIG. 15 and the phantom line in FIG. 16) is formed on the surface of the bonding portion on the vapor deposition mask 20 side. (Refer to the chain double-dashed line), the height difference H2 between the highest point and the lowest point in the normal direction N of the first surface 30a of the joint becomes larger than 5 μm. Then, it is possible to suppress the problem that the adhesiveness between the organic EL substrate 92 and the mask 30 is deteriorated. Therefore, when performing the vapor deposition process using the mask 30, the vapor deposition material 98 can be vapor deposited at a desired position on the organic EL substrate 92. Further, since the height difference H2 is 5 μm or less, it is possible to prevent the organic EL substrate 92 from being scratched when the organic EL substrate 92 is placed on the mask 30, and to prevent the organic EL substrate 92 from being scratched. It is possible to suppress the occurrence of cracks in the surface. In this case, the range of the height difference H2 is preferably 3 μm or less, more preferably 2 μm or less.

The height difference H2 between the highest point and the lowest point of the first surface 30a of the second joint portion 19b in the normal direction N may be 0 μm or more, or may be 0.5 μm or more. It may be 1 μm or more. The height difference H2 may be 5 μm or less, 3 μm or less, or 2 μm or less. The range of the height difference H2 may be defined by a combination of any one of the plurality of upper limit candidate values and any one of the plurality of lower limit candidate values. For example, the range of the height difference H2 may be 0 μm or more and 5 μm or less, may be 0.5 μm or more and 3 μm or less, or may be 1 μm or more and 2 μm or less. Further, the range of the height difference H2 may be determined by a combination of any two of the plurality of upper limit candidate values described above. For example, the range of the height difference H2 may be 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, or 3 μm or more and 5 μm or less. Further, the range of the height difference H2 may be determined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the height difference H2 may be 0 μm or more and 1 μm or less, 0 μm or more and 0.5 μm or less, or 0.5 μm or more and 1 μm or less.

Further, as shown in FIGS. 16 and 17, the second joint portion 19b extends from the first surface 30a of the ear portion 17 to the support body 40 via the second surface 30b. The second joint portion 19b is a portion of the ear portion 17 and the support body 40 of the mask 30 that is melted at the time of welding and solidifies, and a portion from the first surface 30a to the second surface 30b of the ear portion 17 and the support portion. It includes a portion of body 40. The second bonding portion 19b is formed such that the upper surface of the second bonding portion 19b is located on the same plane as the first surface 30a of the mask 30, like the first bonding portion 19a shown in FIG. 6B. Good. Further, the second bonding portion 19b may be formed so as to be recessed toward the second surface 30b side with respect to the first surface 30a of the mask 30, similarly to the first bonding portion 19a shown in FIG. 6C.

The rest of the configuration of the mask 30 is substantially the same as that of the mask 30 of the first embodiment.

Next, the support 40 will be described in detail. As shown in FIG. 14, the support 40 may have a substantially rectangular shape in a plan view. The support 40 has a size larger than the mask 30 in a plan view, and the contour defining the support 40 may surround the contour defining the mask 30. The support 40 may be attached to the mask 30 such that a pair of opposing sides of each side of the support 40 correspond to the ears 17 of the mask 30.

Further, as shown in FIG. 18, a plurality of second through holes 45 are formed in the support body 40, and the second through holes 45 may be larger than the effective area 22 of the mask 30 in plan view. Good. Further, one second through hole 45 of the support body 40 corresponds to one effective region 22 of the mask 30.

The second through hole 45 may have, for example, a substantially quadrangular shape in plan view, or more accurately, a substantially rectangular shape in plan view. Although not shown, each of the second through holes 45 can have contours of various shapes depending on the shape of the display area of the deposition target substrate (organic EL substrate) 92. For example, each second through hole 45 may have a circular or elliptical contour, or may have a polygonal shape such as a hexagon or an octagon. Further, the respective second through holes 45 may have different shapes, and may have, for example, a circular shape, an elliptical shape, or a polygonal shape such as a hexagon or an octagon.

A support region 46 is provided around the second through hole 45, and the support region 46 may be configured to support the peripheral region 23 of the mask 30. Accordingly, the support 40 can support the mask 30 so as to surround the effective area 22 of the mask 30, and thus wrinkles and deformation of the mask 30 can be effectively suppressed. The support region 46 is not a region through which the vapor deposition material 98 intended to be vapor deposited on the organic EL substrate 92 passes.

Further, as shown in FIGS. 14 and 17, in the present embodiment, the above-described first joint portion 19a may join the support 40 and the frame 15 to each other. In this case, as shown in FIG. 14, the first joint portion 19 a may extend linearly along each side of the support 40. Although not shown, the first bonding portion 19a may be formed along only a pair of sides of the support 40 that correspond to the ears 17 of the mask 30. Further, the support 40 is not a member intended to come into contact with the organic EL substrate 92. Therefore, in the present embodiment, the above-mentioned height difference H1 of the first joint portion 19a may be 5 μm or more.

Next, the support 40 will be described in more detail with reference to FIG. As shown in FIG. 19, the plurality of second through holes 45 are on one side along the normal direction N of the first surface 30a of the mask 30 (in the illustrated example, the second through holes 45 face the second surface 30b of the mask 30). The first surface 400a which is the side) penetrates to the second surface 400b which is the other side along the normal direction N of the first surface 30a of the mask 30. In the illustrated example, as described later in detail, the first recess 401 is formed in the first surface 640a of the metal plate 640 by etching, and the second recess 640b is formed on the second surface 640b of the metal plate 640 facing the first surface 640a. The concave portion 402 is formed (see FIGS. 20A to 20D). The first recess 401 is connected to the second recess 402, so that the second recess 402 and the first recess 401 are formed so as to communicate with each other. The second through hole 45 is composed of a second recess 402 and a first recess 401 connected to the second recess 402.

In the present embodiment, the thickness t2 of the support 40 may be 0.2 mm or more, 0.5 mm or more, 0.8 mm or more, and 1.0 mm or more. May be. When the thickness t2 of the support 40 is 0.2 mm or more, the rigidity of the vapor deposition mask 20 can be improved. This can prevent the mask 30 from wrinkling or deforming. Further, the thickness t2 of the support 40 may be 2.0 mm or less, 1.7 mm or less, 1.5 mm or less, or 1.2 mm or less. When the thickness t2 of the support 40 is 2.0 mm or less, the moldability of the support 40 can be improved. The range of the thickness t2 of the support body 40 may be determined by a combination of any one of the above-mentioned upper limit candidate values and any one of the above-mentioned plurality of lower limit candidate values. For example, the range of the thickness t2 of the support 40 may be 0.2 mm or more and 2.0 mm or less, 0.5 mm or more and 1.7 mm or less, and 0.8 mm or more and 1.2 mm or less. It may be 1.0 mm or more and 1.2 mm or less. Further, the range of the thickness t2 of the support 40 may be determined by a combination of any two of the above-described upper limit candidate values. For example, the range of the thickness t2 of the support 40 may be 1.2 mm or more and 1.5 mm or less. Further, the range of the thickness t2 of the support 40 may be determined by a combination of any two of the plurality of lower limit candidate values described above. For example, the range of the thickness t2 of the support 40 may be 0.5 mm or more and 0.8 mm or less.

An iron alloy containing nickel can be used as a main material forming the support 40 described above. For example, an iron alloy such as an Invar material containing 34% by mass or more and 38% by mass or less of nickel, or a Super Invar material containing cobalt in addition to nickel can be used. Further, the main material forming the support body 40 is not limited to this, and an iron alloy other than the above iron alloy including nickel, such as an iron alloy including chromium, may be used. As the iron alloy containing chromium, for example, an iron alloy so-called stainless steel can be used. Further, metals or alloys other than iron alloys such as nickel and nickel-cobalt alloys may be used.

Next, the frame 15 will be described in detail. As shown in FIG. 18, the opening 15a of the frame 15 according to the present embodiment may be provided so as to overlap the second through hole 45 of the support 40 in a plan view. In the present embodiment, the contour that defines the opening 15 a in plan view may surround all of the contour that defines the second through hole 45. At the time of vapor deposition, the vapor deposition material 98 vaporized from the crucible 94 reaches the vapor deposition mask 20 through the opening 15 a of the frame 15.

Further, as shown in FIG. 14, the frame 15 has a size larger than that of the support body 40 in a plan view, and the contour defining the frame 15 may surround the contour defining the support body 40. Good. The frame 15 may be attached to the support 40 so that each side of the frame 15 corresponds to each side of the support 40.

Next, a method of manufacturing the vapor deposition mask device 10 will be described mainly with reference to FIGS. 20A to 22B. Here, first, a method of manufacturing the vapor deposition mask 20 will be described.

First, the mask 30 is prepared. At this time, the mask 30 is manufactured by, for example, the method shown in FIGS. 9A to 9D.

Further, in parallel with the preparation of the mask 30, the support 40 is prepared. At this time, first, as shown in FIG. 20A, a resist film containing a photosensitive resist material is formed on the first surface 640a and the second surface 640b of the metal plate 640. Then, the resist film is exposed and developed. Thus, the first resist pattern 650a can be formed on the first surface 640a of the metal plate 640, and the second resist pattern 650b can be formed on the second surface 640b of the metal plate 640.

Next, as shown in FIG. 20B, a first surface etching step is performed in which a region of the first surface 640a of the metal plate 640 that is not covered by the first resist pattern 650a is etched using a first etching solution. .. As a result, a large number of first recesses 401 are formed on the first surface 640a of the metal plate 640. As the first etching solution, for example, a solution containing ferric chloride solution and hydrochloric acid is used.

Next, as shown in FIG. 20C, a region of the second surface 640b of the metal plate 640 that is not covered with the second resist pattern 650b is etched to form a second recess 402 on the second surface 640b. An etching process is performed. The second surface etching step is performed until the first concave portion 401 and the second concave portion 402 communicate with each other, thereby forming the second through hole 45. As the second etching solution, a solution containing, for example, a ferric chloride solution and hydrochloric acid is used as in the above-described first etching solution. In the second surface etching step, as shown in FIG. 20C, the first recess 401 may be covered with the resin 690 having resistance to the second etching solution.

Then, as shown in FIG. 20D, the resin 690 is removed from the metal plate 640. The resin 690 can be removed by using, for example, an alkaline stripping solution. When the alkaline stripping solution is used, as shown in FIG. 20D, the resist patterns 650a and 650b are removed at the same time as the resin 690. Note that after removing the resin 690, the resist patterns 650a and 650b may be removed separately from the resin 690 using a peeling liquid different from the peeling liquid for peeling the resin 690. Thereby, the support body 40 in which the second through hole 45 is formed can be obtained.

Next, the mask 30 obtained as described above is welded to the support 40 by a CW laser (that is, a continuous wave laser). As a result, as compared with the case of using a pulse laser that intermittently emits laser light, within the unit length along the longitudinal direction of the second joint portion 19b, the first surface of the second joint portion 19b is The height difference H2 (see FIG. 16) between the highest point and the lowest point in the normal direction N of 30a can be reduced. In addition, by using the CW laser, the width W2 (see FIG. 15) of the second bonding portion 19b is larger than the width of the widest portion as compared with the case of using the pulse laser that intermittently emits the laser light. , The change rate of the width W2 obtained by dividing the difference between the width value of the narrowest portion of the second joint portion 19b and the width value of the widest portion of the second joint portion 19b having the widest width W2. Can be made smaller.

In this case, first, the mask 30 is placed on the support 40 as shown in FIG. 21A.

Next, as shown in FIG. 21B, laser light La is emitted from the first surface 30a side of the mask 30 by a laser device (not shown), for example. As a result, a part of the ear portion 17 of the mask 30 and a part of the support body 40 are melted.

When the irradiation of the laser beam La is finished, the temperature of the melted portion is lowered and solidified to become the second joint portion 19b. As a result, the ear portion 17 of the mask 30 and the support body 40 are bonded to each other by the second bonding portion 19b. In this way, the vapor deposition mask 20 having the support 40 and the mask 30 bonded to the support 40 by the second bonding portion 19b can be obtained.

In addition, the frame 15 is prepared in parallel with the preparation of the vapor deposition mask 20. At this time, the frame 15 is manufactured by, for example, the method shown in FIGS. 10A and 10B.

Next, the vapor deposition mask 20 obtained as described above is welded to the frame 15 by a CW laser.

In this case, first, as shown in FIG. 22A, the vapor deposition mask 20 is placed on the frame 15. At this time, the vapor deposition mask 20 is placed on the frame 15 so that the support 40 and the frame 15 are in contact with each other.

Next, as shown in FIG. 22B, laser light La is emitted from the first surface 30a side of the mask 30, for example, by a laser device (not shown). As a result, a part of the support 40 and a part of the frame 15 are melted. At this time, the vapor deposition mask 20 was pulled in the surface direction of the first surface 30 a of the mask 30 in order to suppress the occurrence of bending of the vapor deposition mask 20 and adjust the position of the effective region 22 of the mask 30. In this state, the support 40 and the frame 15 may be joined to each other.

When the irradiation of the laser beam La is finished, the temperature of the melted portion is lowered and solidified to become the first joint portion 19a. As a result, the support 40 and the frame 15 are joined to each other by the first joining portion 19a. In this way, the vapor deposition mask device 10 including the frame 15 and the vapor deposition mask 20 joined to the frame 15 by the first joining portion 19a can be obtained.

When the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 using the vapor deposition mask device 10 according to the present embodiment, the vapor deposition material 98 is vapor-deposited on the organic EL substrate 92 by the method shown in FIGS. 12A to 12C. be able to.

Here, in the present embodiment, in the unit length (1.0 cm) along the longitudinal direction of the second joint portion 19b, in the normal direction N of the first surface 30a of the second joint portion 19b. The height difference H2 between the highest point and the lowest point may be 5 μm or less. Thereby, the adhesiveness between the organic EL substrate 92 and the vapor deposition mask 20 can be improved. Therefore, when performing the vapor deposition process using the vapor deposition mask 20, the vapor deposition material 98 can be vapor deposited at a desired position on the organic EL substrate 92. Further, when the height difference H2 is 5 μm or less, it is possible to prevent the organic EL substrate 92 from being scratched when the organic EL substrate 92 is placed on the vapor deposition mask 20, and at the same time, to prevent the organic EL substrate from being scratched. It is possible to prevent the 92 from cracking.

As described above, according to the present embodiment, within the unit length along the longitudinal direction of the second joint portion 19b, the maximum in the normal direction N of the first surface 30a of the second joint portion 19b. The height difference H2 between the point and the lowest point is 5 μm or less. Thereby, the adhesiveness between the organic EL substrate 92 and the mask 30 can be improved. Therefore, when performing the vapor deposition process using the mask 30, the vapor deposition material 98 can be vapor deposited at a desired position on the organic EL substrate 92.

Further, according to the present embodiment, the difference between the value of the width of the portion where the width W2 of the second joint portion 19b is the widest and the value of the width of the portion where the width W2 of the second joint portion 19b is the narrowest is The change rate of the width obtained by dividing the width W2 of the two-joint portion 19b by the value of the width of the widest portion is 0% or more and 20% or less. Accordingly, it is possible to suppress the formation of the recess A2 (see FIG. 15) into which the cleaning liquid can enter, in the second joint portion 19b. Therefore, it is possible to suppress the problem that the cleaning liquid remains on the cleaned vapor deposition mask 20. As a result, when the vapor deposition process is performed using the cleaned vapor deposition mask 20, it is possible to prevent the cleaning liquid from evaporating in the vapor deposition device 90 and the desired degree of vacuum not being obtained. Further, it is possible to prevent the vaporization of the cleaning liquid in the vapor deposition device 90 from making it difficult to vapor deposit the vapor deposition material 98 at a desired position on the organic EL substrate 92.

Further, according to the present embodiment, the mask 30 is welded to the support 40 by the CW laser. Thereby, the second joint portion 19b having the above-described shape can be easily formed.

It should be noted that various modifications can be made to the above-described embodiments. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding portions in each of the above-described embodiments are used for the portions that can be configured similarly to each of the above-described embodiments. And redundant description will be omitted. Further, when it is clear that the operational effects obtained in the above-described respective embodiments can be obtained also in the modified examples, the description thereof may be omitted.

(Modification of mask manufacturing method)
In the above-described present embodiment and modification, an example in which the mask 30 is manufactured by etching has been described. However, the method employed to make the mask 30 is not limited to etching. For example, the mask 30 may be produced by plating.

(Modification of mask)
In the above-described present embodiment, the example in which the plurality of masks 30 are attached to the support 40 has been described. However, the present invention is not limited to this, and as shown in FIG. 23, a single mask 30 having a plurality of effective regions 22 arranged in a lattice may be attached to the support 40. In this case, the second bonding portion 19b may extend linearly along each side of the mask 30. Although not shown, the second bonding portion 19b may be formed along only a pair of sides of the mask 30 that face each other. Further, in FIG. 23, the second through hole 45 and the support region 46 of the support body 40 are not shown for the sake of clarity. Furthermore, the vapor deposition mask 20 may not be provided with the support 40 and may be composed of only the mask 30.

(Modification of mask ear)
In the above-described present embodiment and modification, an example is shown in which the thickness of the ear portion 17 and the thickness of the intermediate portion 18 of the vapor deposition mask 20 are the same. However, the thickness is not limited to this, and the thickness of the ear portion 17 and the thickness of the intermediate portion 18 may be different. For example, as shown in FIG. 24, the thickness of the ear portion 17 may be larger than the thickness of the intermediate portion 18. Further, although not shown, for example, the thickness of the ear portion 17 may be smaller than the thickness of the intermediate portion 18. Even in this case, the vapor deposition mask 20 may be configured only by the mask 30 without the support 40.

(First Modification of Support)
Further, in the above-described present embodiment, the example in which the support body 40 is composed of a single member has been described. However, the present invention is not limited to this, and as shown in FIG. 25, the support 40 may have a plurality of layers bonded to each other. Specifically, the support 40 may have a first layer 40a bonded to the mask 30 and a second layer 40b bonded to the first layer 40a. In this case, the second through hole 45 of the support body 40 penetrates the first layer 40a and the second layer 40b. That is, the first layer 40a of the support 40 is provided with the first openings 40c in a predetermined pattern, and the second layer 40b is provided with the second openings 40d communicating with the first openings 40c. .. The first opening 40c and the second opening 40d communicate with each other, thereby defining the second through hole 45 penetrating the first layer 40a and the second layer 40b of the support body 40.

Thus, the support 40 having the first layer 40a and the second layer 40b makes it possible to easily obtain the support 40 having a desired thickness t2. That is, when forming the second through hole 45 of the support 40, the metal plate is patterned by the photolithography method including the exposure step and the development step, as described above. At this time, if the metal plate is thick, it may be difficult to pattern the metal plate into a desired pattern. On the other hand, since the support body 40 has the first layer 40a and the second layer 40b, the first opening portion of the first layer 40a is formed before the first layer 40a and the second layer 40b are joined. 40c and the 2nd opening 40d of the 2nd layer 40b can be formed, respectively. And the 1st layer 40a in which the 1st opening 40c was formed, and the 2nd layer 40b in which the 2nd opening 40d was formed are joined mutually, the 2nd penetration hole 45 is formed, and sufficient thickness. The support 40 having t2 (see FIG. 19) can be easily obtained.

The first layer 40a and the second layer 40b may be joined to each other by an adhesive, a brazing material, or welding. In this case, the joint surface 47 between the first layer 40a and the second layer 40b is preferably covered with the metal member 48 from the side. Thereby, even when the vapor deposition mask 20 is cleaned and the vapor deposition material 98 attached to the vapor deposition mask 20 is removed, the problem that the cleaning liquid enters the gap between the first layer 40a and the second layer 40b is suppressed. be able to. Therefore, when the vapor deposition process is performed using the cleaned vapor deposition mask 20, it is possible to prevent the cleaning liquid from evaporating in the vapor deposition apparatus 90 to prevent a desired degree of vacuum from being obtained. Further, it is possible to prevent the vaporization of the cleaning liquid in the vapor deposition device 90 from making it difficult to vapor deposit the vapor deposition material 98 at a desired position on the organic EL substrate 92.

When manufacturing such a support 40, first, a first layer 40a bonded to the mask 30 and a second layer 40b bonded to the first layer 40a are prepared. In this case, first, a metal plate is prepared, and the metal plate is patterned by a photolithography method including an exposure process and a development process. As a result, as shown in FIG. 26A, the first opening 40c is formed in the first layer 40a, and the second opening 40d is formed in the second layer 40b.

Next, as shown in FIG. 26B, the first layer 40a and the second layer 40b are bonded to each other. At this time, the first layer 40a and the second layer 40b may be bonded to each other by an adhesive, a brazing material, or welding.

Next, as shown in FIG. 26C, the bonding surface 47 between the first layer 40a and the second layer 40b is covered with the metal member 48. In this case, for example, by welding, the metal member 48 may be built up so as to cover the joint surface 47 from the side, and a metal may be deposited by plating so as to cover the joint surface 47 from the side. 48 may be formed. In this way, the support 40 is obtained.

Further, in this modification, as shown in FIG. 27, each of the layers 40a and 40b may be completely covered from the side by the metal member 48, and the lower surface of the second layer 40b is covered by the metal member 48. May be.

In addition, in this modification, the support 40 may have three or more layers. For example, as shown in FIG. 28, the support 40 may further have a third layer 40f interposed between the first layer 40a and the second layer 40b. In this case, the second through hole 45 of the support body 40 penetrates the layers 40a, 40f, 40b. That is, the third layer 40f of the support 40 is provided with the third opening 40g communicating with the first opening 40c of the first layer 40a and the second opening 40d of the second layer 40b. Then, the first opening 40c, the third opening 40g, and the second opening 40d communicate with each other, so that the second penetration that penetrates the first layer 40a, the third layer 40f, and the second layer 40b of the support body 40. A hole 45 is defined. Also in this case, it is preferable that the bonding surfaces 47 of the layers 40a, 40f, and 40b be covered with the metal member 48 from the side.

Also in this modification, as shown in FIG. 29, the layers 40a, 40f, 40b may be completely covered from the side by the metal member 48, and the lower surface of the second layer 40b may be covered by the metal member 48. You may be told.

(Second Modification of Support)
In addition, in the above-described present embodiment, the example in which the second through hole 45 of the support body 40 has a size larger than the effective region 22 of the mask 30 in a plan view has been described. However, the present invention is not limited to this, and the second through hole 45 may have a size smaller than the effective region 22 in plan view. Further, a part of the plurality of effective areas 22 may be covered with the support area 46.

10 Vapor Deposition Mask Device 15 Frame 19a First Joint 191a First Joint 192a First Joint 19b Second Joint 20 Vapor Deposition Mask 40 Support

Claims (15)

A vapor deposition mask having a first surface and a second surface opposite to the first surface;
A frame which is joined to the vapor deposition mask via a linear first joining portion and is located on the second surface side,
Within the unit length along the longitudinal direction of the first joint portion, the height difference between the highest point and the lowest point in the normal direction of the first surface of the first joint portion is 5 μm or less. There is a vapor deposition mask device. The difference between the value of the width of the widest portion of the first joint and the value of the width of the narrowest portion of the first joint is calculated as the width of the widest portion of the first joint. The vapor deposition mask device according to claim 1, wherein the change rate of the width obtained by dividing by the value is 0% or more and 20% or less. The vapor deposition mask device according to claim 1, wherein the vapor deposition mask has a thickness of 5 μm or more and 10 μm or less. A mask having a first surface and a second surface located on the opposite side of the first surface;
A support body which is joined to the mask through a linear second joining portion and is located on the second surface side;
A frame joined to the support through a linear first joining portion,
Within the unit length along the longitudinal direction of the second joint, the height difference between the highest point and the lowest point in the normal direction of the first surface of the second joint is 5 μm or less. There is a vapor deposition mask device. The difference between the width value of the widest part of the second joint and the width of the narrowest part of the second joint is calculated as the width of the widest part of the second joint. The vapor deposition mask device according to claim 4, wherein the change rate of the width obtained by dividing by the value is 0% or more and 20% or less. The vapor deposition mask device according to claim 4, wherein the mask has a thickness of 5 μm or more and 10 μm or less. A mask having a first surface and a second surface located on the opposite side of the first surface;
A support body which is joined to the mask through a linear second joining portion and is located on the second surface side,
Within the unit length along the longitudinal direction of the second joint, the height difference between the highest point and the lowest point in the normal direction of the first surface of the second joint is 5 μm or less. There is a vapor deposition mask. The difference between the width value of the widest part of the second joint and the width of the narrowest part of the second joint is calculated as the width of the widest part of the second joint. The vapor deposition mask according to claim 7, wherein the change rate of the width obtained by dividing by the value is 0% or more and 20% or less. The vapor deposition mask according to claim 7, wherein the mask has a thickness of 5 μm or more and 10 μm or less. A method of manufacturing a vapor deposition mask device comprising a vapor deposition mask and a frame attached to the vapor deposition mask, comprising:
A step of preparing the vapor deposition mask,
Preparing the frame,
Welding the vapor deposition mask to the frame with a CW laser. The method for manufacturing a vapor deposition mask device according to claim 10, wherein the thickness of the vapor deposition mask is 5 μm or more and 10 μm or less. A method for manufacturing a vapor deposition mask device comprising: a mask; a vapor deposition mask having a support attached to the mask; and a frame attached to the support.
Preparing the mask,
Preparing the support,
Preparing the frame,
Welding the mask to the support with a CW laser;
Welding the support to the frame. The method for manufacturing a vapor deposition mask device according to claim 12, wherein the mask has a thickness of 5 μm or more and 10 μm or less. A method for manufacturing a vapor deposition mask, comprising a mask and a support attached to the mask,
Preparing the mask,
Preparing the support,
Welding the mask to the support with a CW laser. The method for manufacturing a vapor deposition mask according to claim 14, wherein the mask has a thickness of 5 μm or more and 10 μm or less.