JP2020122208A - Vapor deposition mask and manufacturing method of vapor deposition mask - Google Patents

Abstract

To provide a stable connection structure between a thin film and a holding frame for holding the thin film, in a vapor deposition mask in which a vapor deposition region is formed of the thin film.SOLUTION: A vapor deposition mask has a thin film-shaped mask body provided with a plurality of openings, a holding frame provided around the mask body, and a connection member for connecting the mask body to the holding frame. In a plane view, a first outer edge of the connection member in a region in contact with the holding frame is outside a second outer edge of the mask body in contact with the connection member. In a cross-sectional view, the surface of the connection member gradually approaches the second outer edge, from the first outer edge to the second outer edge.SELECTED DRAWING: Figure 6

Description

One embodiment of the present invention relates to a vapor deposition mask and a method for manufacturing the vapor deposition mask. In particular, one of the embodiments of the present invention relates to a vapor deposition mask including a thin film mask body and a method for manufacturing the vapor deposition mask.

In the display device, a light emitting element is provided in each pixel, and an image is displayed by controlling light emission individually. For example, in an organic EL display device using an organic EL element as a light emitting element, an organic EL element is provided in each pixel, and the organic EL element is a layer containing an organic EL material between a pair of electrodes including an anode electrode and a cathode electrode. It has a structure sandwiching (hereinafter, referred to as “organic EL layer”). The organic EL layer is composed of functional layers such as a light emitting layer, an electron injection layer, and a hole injection layer, and can emit light of various wavelengths by selecting these organic materials.

A vacuum deposition method is used for forming a thin film of an organic EL device using a low molecular compound as a material. In the vacuum vapor deposition method, a vapor deposition material is heated by a heater under high vacuum so as to be sublimated and deposited (vapor deposited) on the surface of a substrate to form a thin film. At this time, a high-definition thin film pattern is formed through the openings of the mask by using a mask (vapor deposition mask) having a large number of fine opening patterns.

The vapor deposition mask is classified into a fine metal mask (FMM) that is patterned by etching and an electro fine forming mask (EFM) that uses an electroforming technique, depending on the manufacturing method. For example, Patent Document 1 discloses a method in which a mask portion having a high-definition pattern is formed by electroforming and the mask portion is fixed to the frame body portion by electroforming.

JP, 2017-210633, A

In thin film vapor deposition of organic EL elements, it is very important to keep the positional accuracy of the mask high. However, in the vapor deposition mask disclosed in Patent Document 1, the mask portion and the frame body portion have a step in the surface direction. Therefore, when the vapor deposition mask and the vapor deposition substrate are brought into close contact with each other, there is a problem that a gap is formed between the vapor deposition mask and the vapor deposition substrate, resulting in poor stability. Further, when the vapor deposition mask and the vapor deposition substrate are peeled off, the mask is likely to be deformed, resulting in poor durability. One embodiment of the present invention has an object to provide a vapor deposition mask with improved positional accuracy and durability.

A method for manufacturing a vapor deposition mask according to an embodiment of the present invention includes forming a mask body having a plurality of openings on a substrate, forming an insulating layer that covers the plurality of openings, and exposes an outer periphery of the mask body. An adhesive member is arranged on the outer periphery of the main body, a holding frame is arranged on the outer periphery of the mask main body so as to be in contact with the adhesive member, a connection member is formed between the mask main body and the holding frame, the insulating layer is removed, and the mask Peeling the substrate from the body.

An evaporation mask according to an embodiment of the present invention includes a mask body having a plurality of openings, a holding frame arranged on the outer periphery of the mask body, a bottom surface and side surfaces of the holding frame, and a bottom surface of the holding frame and the mask body. And a connecting member arranged between the.

It is a top view of the vapor deposition device concerning one embodiment of the present invention. It is a side view of the vapor deposition device concerning one embodiment of the present invention. It is sectional drawing of the vapor deposition source which concerns on one Embodiment of this invention. It is a top view of the vapor deposition mask concerning one embodiment of the present invention. It is sectional drawing of the vapor deposition mask which concerns on one Embodiment of this invention. It is an expanded sectional view of a vapor deposition mask concerning one embodiment of the present invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is a top view which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is a top view of the vapor deposition mask concerning one embodiment of the present invention. It is sectional drawing of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. FIG. 3 is a top view of the display device according to the embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention. It is a sectional view of a display concerning one embodiment of the present invention.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings. However, the present invention can be carried out in various modes without departing from the gist thereof, and is not construed as being limited to the description of the embodiments exemplified below.

In order to make the description clearer, the drawings may schematically show the width, thickness, shape, etc. of each part, as compared with the actual mode. However, the examples shown in the drawings are merely examples and do not limit the interpretation of the present invention. In this specification and the drawings, the same components as those described above with reference to the already-existing drawings are designated by the same reference numerals, and detailed description thereof may be appropriately omitted.

In the present invention, when a plurality of films are formed by performing etching or light irradiation on a certain film, the plurality of films may have different functions and roles. However, these plural films are derived from the films formed as the same layer in the same process, and have the same layer structure and the same material. Therefore, these plural films are defined as existing in the same layer.

In the present specification and claims, when expressing a mode in which another structure is arranged on a certain structure, when simply expressed as “above”, a certain structure is mentioned unless otherwise specified. When another structure is placed directly above the structure so as to be in contact with the body, and when another structure is placed above one structure via another structure. Defined to include both.

<First Embodiment>
A vapor deposition mask, a vapor deposition mask manufacturing method, and a vapor deposition apparatus using the same according to an embodiment of the present invention will be described with reference to FIGS. 1 to 17.

[Configuration of vapor deposition device 10]
The configuration of the vapor deposition device 10 according to the embodiment of the present invention will be described with reference to FIGS. 1 to 3. The vapor deposition device 10 includes a plurality of chambers having various functions. The example shown below is an example showing one deposition chamber 100 of the plurality of chambers. FIG. 1 is a top view of a vapor deposition device according to an embodiment of the present invention. FIG. 2 is a side view of the vapor deposition device according to the embodiment of the present invention.

As shown in FIG. 1, the vapor deposition chamber 100 is partitioned from the adjacent chamber by a load lock door 102. The vapor deposition chamber 100 can maintain the inside of the vapor deposition chamber 100 in a high vacuum reduced pressure state or in a state filled with an inert gas such as nitrogen or argon. Therefore, a decompression device, a gas intake/exhaust mechanism, and the like (not shown) are connected to the vapor deposition chamber 100.

The vapor deposition chamber 100 has a configuration capable of accommodating an object on which a vapor deposition film is formed. Hereinafter, an example in which the plate-shaped deposition target substrate 104 is used as this object will be described. As shown in FIGS. 1 and 2, the vapor deposition source 112 is disposed under the vapor deposition substrate 104. The vapor deposition source 112 has a substantially rectangular shape, and is arranged along one side of the vapor deposition substrate 104. Such an evaporation source 112 is called a linear source type. When the linear source type vapor deposition source 112 is used, the vapor deposition chamber 100 has a configuration in which the vapor deposition substrate 104 and the vapor deposition source 112 move relative to each other. FIG. 1 shows an example in which the vapor deposition source 112 is fixed and the vapor deposition target substrate 104 moves on it.

The evaporation source 112 is filled with the material to be evaporated. The vapor deposition source 112 has a heating unit 122 (see FIG. 3 described later) that heats the material. When the material is heated by the heating unit 122 of the vapor deposition source 112, the heated material is vaporized and becomes vapor to travel from the vapor deposition source 112 to the vapor deposition substrate 104. When the vapor of the material reaches the surface of the deposition target substrate 104, the vapor is cooled and solidified, and the material is deposited on the surface of the deposition target substrate 104. In this way, a thin film of the material is formed on the deposition target substrate 104 (on the lower surface of the deposition target substrate 104 in FIG. 2).

As shown in FIG. 2, the vapor deposition chamber 100 further includes a holder 108 for holding the vapor deposition substrate 104 and the vapor deposition mask 300, a moving mechanism 110 for moving the holder 108, and a shutter 114. The holder 108 maintains the positional relationship between the deposition target substrate 104 and the deposition mask 300. The vapor deposition substrate 104 and the vapor deposition mask 300 are moved on the vapor deposition source 112 by the moving mechanism 110. The shutter 114 is movably provided on the vapor deposition source 112. As the shutter 114 moves over the vapor deposition source 112, the shutter 114 shields the vapor of the material heated by the vapor deposition source 112. By moving the shutter 114 to a position where it does not overlap with the evaporation source 112, vapor of the material can reach the evaporation target substrate 104 without being blocked by the shutter 114. The opening/closing of the shutter 114 is controlled by a control device (not shown).

Although the linear source type vapor deposition source 112 is shown in the examples shown in FIGS. 1 and 2, the vapor deposition source 112 is not limited to the above-described shape and may have any shape. For example, the shape of the vapor deposition source 112 may be a so-called point source type shape in which the material used for vapor deposition is selectively arranged at the center of gravity of the vapor deposition substrate 104 and in the vicinity thereof. In the case of the point source type, the relative positions of the vapor deposition substrate 104 and the vapor deposition source 112 may be fixed, and a mechanism for rotating the vapor deposition substrate 104 may be provided in the vapor deposition chamber 100. Further, in the examples shown in FIGS. 1 and 2, the horizontal vapor deposition apparatus has been shown in which the substrate is arranged such that the main surface of the substrate is parallel to the horizontal direction. However, in the vapor deposition mask 300, the main surface of the substrate is horizontal. It can also be used in a vertical vapor deposition apparatus in which a substrate is arranged so as to be perpendicular to it.

FIG. 3 is a sectional view of a vapor deposition source according to an embodiment of the present invention. The vapor deposition source 112 includes a storage container 120, a heating unit 122, a vapor deposition holder 124, a mesh-shaped metal plate 128, and a pair of guide plates 132.

The storage container 120 is a member that holds a material to be vapor-deposited. As the storage container 120, for example, a member such as a crucible can be used. The storage container 120 is detachably held inside the heating unit 122. The storage container 120 can include, for example, a metal such as tungsten, tantalum, molybdenum, titanium, or nickel, or an alloy thereof. Alternatively, the storage container 120 can include an inorganic insulator such as alumina, boron nitride, or zirconium oxide.

The heating unit 122 is detachably held inside the vapor deposition holder 124. The heating unit 122 has a configuration for heating the storage container 120 by a resistance heating method. Specifically, the heating unit 122 has a heater 126. By energizing the heater 126, the heating unit 122 is heated and the material in the storage container 120 is heated and vaporized. The vaporized material is emitted from the opening 130 of the storage container 120 to the outside of the storage container 120. The mesh-shaped metal plate 128 arranged so as to cover the opening 130 suppresses the bumped material from being discharged to the outside of the storage container 120. The heating unit 122 and the vapor deposition holder 124 may include the same material as the storage container 120.

The pair of guide plates 132 are provided above the vapor deposition source 112. At least a part of the guide plate 132 is inclined with respect to the side surface of the storage container 120 or the vertical direction. The angle at which the vapor of the material spreads (hereinafter referred to as the injection angle) is controlled by the inclination of the guide plate 132, and directivity can be given to the flight direction of the vapor. The ejection angle is determined by the angle θe (unit: °) formed by the two guide plates 132. The angle θe is appropriately adjusted depending on the size of the deposition target substrate 104, the distance between the deposition source 112 and the deposition target substrate 104, and the like. The angle θe is, for example, 40° or more and 80° or less, 50° or more and 70° or less, and typically 60°. The surfaces formed by the inclined surfaces of the guide plate 132 are the critical surfaces 160a and 160b. The material vapor flies in the space between the critical surfaces 160a and 160b. Although not shown, when the vapor deposition source 112 is a point source, the guide plate 132 may be a part of the surface of the cone.

The material to be vapor-deposited can be selected from various materials and can be either an organic compound or an inorganic compound. As the organic compound, for example, a light emitting material or a carrier transporting organic compound can be used. A metal, an alloy thereof, a metal oxide, or the like can be used as the inorganic compound. A film may be formed by filling one storage container 120 with a plurality of materials. Although not shown, the vapor deposition chamber 100 may be configured such that a plurality of vapor deposition sources can be used to simultaneously heat different materials.

[Structure of vapor deposition mask 300]
The configuration of the vapor deposition mask 300 according to the embodiment of the present invention will be described with reference to FIGS. 4 to 6. FIG. 4 is a top view of a vapor deposition mask according to an embodiment of the present invention. The vapor deposition mask 300 has a thin film mask body 310, a holding frame 330, and a connecting member 350. A plurality of panel regions 315 are arranged on the mask body 310. In each panel region 315, a plurality of openings 311 penetrating the mask body 310 are provided in accordance with the pixel pitch of the display device. A region other than the opening 311 of the mask body 310 is called a non-opening portion. The non-openings surround each opening 311.

During vapor deposition, the vapor deposition mask 300 and the vapor deposition substrate 104 are aligned such that the vapor deposition region of the vapor deposition target substrate 104 and the opening 311 overlap with each other, and the non-vapor deposition region of the vapor deposition substrate 104 overlaps with the non-opening portion. The vapor of the material passes through the opening 311, and the material is deposited on the vapor deposition region of the vapor deposition substrate 104.

The holding frame 330 and the connecting member 350 are arranged on the outer periphery of the mask body 310. The holding frame 330 and the connection member 350 overlap the mask body 310 in plan view and surround the plurality of panel regions 315 of the mask body 310, that is, the plurality of openings 311.

The holding frame 330 is provided further above the upper surface of the mask body 310. That is, the lower end (bottom surface 331) of the holding frame 330 is provided above the upper end of the mask body 310 in the vertical direction. The holding frame 330 is provided inside the outer edge of the mask body 310. That is, the holding frame 330 is provided inside the mask body 310 in the horizontal direction. The vertical direction is a direction orthogonal to the main surface of the mask body 310. The horizontal direction is a direction parallel to the main surface of the mask body 310.

FIG. 5 is a sectional view of a vapor deposition mask according to an embodiment of the present invention. The sectional view shown in FIG. 5 is a sectional view taken along the line A-A′ in FIG. 4. FIG. 6 shows an enlarged view of the area surrounded by the dotted line in FIG. The connection member 350 is arranged in contact with the bottom surface 331, the inner side surface 333, and the outer side surface 335 of the holding frame 330. On the other hand, the connecting member 350 is not provided on the upper surface of the holding frame 330. However, the present invention is not limited to this, and the connection member 350 may be arranged in contact with the upper surface of the holding frame 330. Here, the bottom surface 331 of the holding frame 330 indicates the mask body 310 side of the holding frame 330. The inner side surface 333 of the holding frame 330 indicates an inner edge on the center side of the holding frame 330, and the outer side surface 335 of the holding frame 330 indicates an outer edge on the side opposite to the inner side surface 333.

The connection member 350 may further extend in the surface direction of the mask body 310. In the present embodiment, the connection member 350 extends from the bottom surface and the inner side surface of the connection member 350 to the center side of the holding frame 330. That is, the connection member 350 projects from the inner side surface of the connection member 350 toward the center side of the holding frame 330 along the bottom surface. Here, the innermost edge of the connecting member 350 is referred to as a second inner edge 355. However, the configuration is not limited to this, and the connection member 350 may further extend from the bottom surface and the outer surface of the connection member 350 to the outside of the holding frame 330. That is, the connection member 350 may protrude from the outer side surface of the connection member 350 toward the outside of the holding frame 330 along the bottom surface. Here, the outermost edge of the connecting member 350 is referred to as a second outer edge 353. The connecting member 350 may be disposed at least between the bottom surface 331 of the holding frame 330 and the mask body 310.

A base layer 370 is further arranged between the mask body 310 and the connection member 350. The base layer 370 overlaps the connection member 350 in a plan view and surrounds the plurality of openings 311 of the mask body 310. The base layer 370 is in contact with the connection member 350 and the mask body 310. The connection member 350 and the base layer 370 connect the mask body 310 and the holding frame 330. The base layer 370 can be expected to have an effect of suppressing deformation on the holding frame 330 side when the stress of the mask body 310 is large. Further, when a pinhole exists in the mask body 330 in the vicinity of the joint between the mask body 310 and the holding frame 330, the pinhole is filled in advance to avoid a joint failure between the mask body 310 and the holding frame 330. The effect of doing can be expected. However, the present invention is not limited to this, and the base layer 370 may not be arranged. In this case, the connecting member 350 may connect the mask body 310 and the holding frame 330.

An adhesive member 390 is further arranged between the mask body 310 and the bottom surface 331 of the holding frame 330. The adhesive member 390 is dispersed in the connection member 350. The adhesive member 390 may be in contact with the bottom surface 331 of the holding frame 330 or the top surface of the base layer 370. The adhesive member 390 is arranged in a region overlapping the holding frame 330 in a plan view. That is, the adhesive member 390 is surrounded by the bottom surface 331 of the holding frame 330, the upper surface of the base layer 370, and the connection member 350.

The second outer edge 353 of the connecting member 350 and the third outer edge 313 of the mask body 310 are outside the first outer edge (outer side surface 335) of the holding frame 330. Here, the outside refers to the outside with respect to the centers of the holding frame 330, the connecting member 350, and the mask body 310. That is, in plan view, the second outer edge 353 of the connecting member 350 and the third outer edge 313 of the mask body 310 are larger than the first outer edge (outer surface 335) of the holding frame 330. In a plan view, the third outer edge 313 of the mask body 310 and the second outer edge 353 of the connection member 350 are substantially the same. In other words, the second outer edge 353 and the third outer edge 313 surround the first outer edge (outer side surface 335).

The second inner edge 355 of the connection member 350 is inside the first inner edge (inner side surface 333) of the holding frame 330. Here, the inside refers to the center side of the holding frame 330, the connecting member 350, and the mask body 310. That is, in plan view, the second inner edge 355 of the connection member 350 is smaller than the first inner edge (inner side surface 333) of the holding frame 330. In other words, the second inner edge 355 surrounds the first inner edge (inner side surface 333).

In the above configuration, the mask body 310 is a plating layer, and the thickness d1 is 5 μm or more and 10 μm or less. The connecting member 350 is a plated layer, and the thickness from the bottom surface 331 of the holding frame 330 to the lower end of the connecting member 350 located vertically below the holding frame 330 is 10 μm or more and 100 μm or less. The thickness of the inner surface and the outer surface of the connecting member 350 is 50 μm or more and 200 μm or less. The underlayer 370 is a plating layer and has a thickness of 50 μm or more and 200 μm or less.

As described above, according to the vapor deposition mask 300 of the present embodiment, the holding frame 330 and the connecting member 350 overlap the mask body 310 in a plan view, so that the mask body 310 is vertically below the holding frame 330. There is no step in the surface direction. Therefore, when the vapor deposition mask 300 is brought into close contact with the vapor deposition substrate by a magnet or the like, the surface of the vapor deposition mask 300 facing the vapor deposition substrate becomes flat, and the vapor deposition mask and the vapor deposition substrate are stably brought into close contact with each other. Is improved. Further, when the vapor deposition substrate is peeled off from the vapor deposition mask, mask deformation is less likely to occur and durability is improved. By connecting the mask main body 310 to the connecting member 350 and the underlying layer 370 vertically below the holding frame 330, it is possible to improve the adhesive strength between the holding frame 330 and the mask main body 310, and they are peeled off. Can be suppressed.

[Method for manufacturing vapor deposition mask 300]
A method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention will be described with reference to FIGS. 7 to 17. 7 to 12 and 14 to 17 are cross-sectional views showing a method for manufacturing a vapor deposition mask according to an embodiment of the present invention. FIG. 13 is a plan view showing the method of manufacturing the vapor deposition mask according to the embodiment of the present invention.

FIG. 7 is a cross-sectional view showing a step of forming the conductive separation layer 430 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. As shown in FIG. 7, a peeling layer 430 is formed on substantially the entire surface of the substrate 410. As a material of the substrate 410, a substrate having high flatness is preferable, and a glass substrate is particularly preferable. In this case, the thickness of the substrate 410 may be 0.5 mm or more and 1 mm or less. As a material of the peeling layer 430, a conductive oxide film such as ITO (indium tin oxide), IZO (indium oxide zinc), or Al (aluminum), Mo (molybdenum), Ti (titanium), Cu (copper). , And metals such as Cr (chromium) are preferable. When the mask body 310 is formed by electrolytic plating, the thickness of the peeling layer 430 is preferably a thickness that can impart sufficient conductivity so that the plating layer can grow. For example, in the case of ITO, it is about 50 nm to 500 nm. It is preferable.

FIG. 8 is a cross-sectional view showing a step of forming the first insulating layer 450 in the method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. A photosensitive resin material is applied to substantially the entire surface of the substrate 410, and a pattern of the first insulating layer (resist) 450 for forming the mask body 310 is formed by photolithography and etching as shown in FIG. The pattern of the first insulating layer 450 corresponds to a region where a plurality of openings 311 penetrating the mask body 310 are arranged.

FIG. 9 is a cross-sectional view showing a step of forming the mask body 310 in the method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. The mask body 310 can be selectively formed on the peeling layer 430 exposed by the opening of the first insulating layer 450 by an electroplating method in which the peeling layer 430 is energized. However, the present invention is not limited to this, and for example, in the case where the peeling layer 430 is not formed, a plating layer is formed on the inside of the opening of the first insulating layer 450 and on the first insulating layer 450 by an electroless plating method. The mask body 310 may be formed by removing (lifting off) the plating layer formed on the first insulating layer 450 by peeling. The material of the mask body 310 is not particularly limited, but a magnetic material such as nickel (Ni) or nickel alloy can be used, and Invar having a small thermal expansion is particularly preferable. The thickness of the mask body 310 is preferably in the range of 5 nm to 10 nm.

FIG. 10 is a cross-sectional view showing a step of forming the second insulating layer 470 in the method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. A photosensitive resin material is applied to substantially the entire surface of the substrate 410, and a pattern of the second insulating layer 470 for forming the base layer 370 is formed by photolithography and etching as shown in FIG. The base layer 370 is arranged so as to overlap with a region where the holding frame 330 is arranged. In this embodiment, the base layer 370 is arranged on the outer periphery of the mask body 310. Therefore, the second insulating layer 470 exposes the outer periphery of the mask body 310 and covers the plurality of panel regions 315 of the mask body 310.

FIG. 11 is a cross-sectional view showing a step of forming the base layer 370 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. The base layer 370 can be selectively formed on the mask body 310 exposed by the opening of the second insulating layer 470 by an electroplating method of energizing the mask body 310. The material of the underlayer 370 is not particularly limited, but a magnetic material such as nickel (Ni) or nickel alloy can be used, and Invar having a small thermal expansion is particularly preferable. The underlayer 370 preferably has a thickness in the range of 50 nm to 200 nm.

12 and 13 are a cross-sectional view and a plan view showing a step of applying an adhesive for temporarily fixing the holding frame 330 to the base layer 370 in the method for manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. In this embodiment, the adhesive is placed on the outer periphery of the mask body 310 on which the holding frame 330 is placed. However, the shape of the area to which the adhesive is applied is not particularly limited as long as it is within the area where the holding frame 330 is arranged. When forming the connection member 350 described later, the plating may be wrapped around the bottom surface 331 of the holding frame 330. It is desirable that the adhesive does not easily cause degassing or the like through the subsequent steps. For example, an adhesive containing an inorganic material as a main component and an adhesive containing the adhesive member 390 dispersed in the solvent 490 are selected. The material of the adhesive member 390 contained in the adhesive is preferably, for example, alumina particles or silicate glass powder. In the figure, the adhesive member 390 is shown as a spherical shape, but the shape of the adhesive member 390 is not limited. The concentration of the adhesive member 390 contained in the adhesive can be appropriately adjusted depending on the shape and area of the region to which the adhesive is applied, and the shape and size of the adhesive member 390. It suffices that the material of the solvent 490 contained in the adhesive has sufficient adhesive force when the holding frame 330 described later is arranged and can be easily removed later. Water or alcohol is preferable as the material of the solvent 490.

In addition, as described above, it is preferable that the adhesive does not degas through the subsequent steps, and as a suitable example, the example using the inorganic material has been described above. For example, a solvent-free photocurable organic adhesive is used. May be.

FIG. 14 is a cross-sectional view showing a step of temporarily holding the holding frame 330 in the method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. The holding frame 330 is arranged so as to be in contact with the adhesive arranged on the base layer 370. The holding frame 330 is temporarily fixed on the mask body 310 with an adhesive. In the present embodiment, the holding frame 330 is a rectangular frame that surrounds the plurality of panel regions 315 of the mask body 310. The material of the holding frame 330 is not particularly limited as long as it has rigidity. As the material of the holding frame 330, for example, glass, stainless steel, Invar, Super Invar, silicon, quartz, or the like can be used, and Invar is particularly preferable. The thickness of the holding frame 330 is 300 μm or more and 3 mm or less, preferably 500 μm or more and 2 mm or less.

After temporarily holding the holding frame 330 to the mask body 310, the solvent 490 contained in the adhesive is removed. For example, when water is used, the solvent 490 can be evaporated by heat treatment in the range of 60° C. or higher and 100° C. or lower for 30 minutes. After the solvent 490 is evaporated, the holding frame 330 is temporarily fixed to the outer periphery of the mask body 310 by the adhesive member 390. That is, the adhesive member 390 connects the bottom surface 331 of the holding frame 330 and the top surface of the base layer 370. As the solvent 490 evaporates, a space is formed between the bottom surface 331 of the holding frame 330 and the top surface of the base layer 370. As described above, after the solvent 490 is once evaporated, only the adhesive member 390 contained in the adhesive remains, so that degassing does not occur in the subsequent steps.

FIG. 15 is a cross-sectional view showing a step of forming the connection member 350 in the method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. The connection member 350 can be selectively formed on the bottom surface 331, the inner side surface 333, the outer surface 335, and the underlayer 370 of the holding frame 330 by an electroplating method in which the holding frame 330 or the underlayer 370 is energized. By forming in this way, the connection member 350 can be efficiently formed between the bottom surface 331 of the holding frame 330 and the base layer 370. However, the present invention is not limited to this, and for example, when the material of the holding frame 330 is not conductive, a plating layer is formed around the holding frame 330, on the underlayer 370, and on the second insulating layer 470 by electroless plating. Then, the connection member 350 may be formed by removing (lifting off) the plating layer formed on the second insulating layer 470 by peeling off the second insulating layer 470. By forming the connecting member 350 between the bottom surface 331 of the holding frame 330 and the base layer 370, the adhesive member 390 is embedded in the connecting member 350. That is, the space between the bottom surface 331 of the holding frame 330 and the top surface of the base layer 370 is filled with the connecting member 350. By temporarily fixing the mask main body 310 and the holding frame 330 with the connecting member 350 after temporarily fixing the mask main body 310 with the adhesive, the positional accuracy of the mask main body 310 can be improved. By connecting the mask main body 310 and the holding frame 330 with the connecting member 350, the base layer 370, and the adhesive member 390, it is possible to improve the adhesive strength and prevent them from peeling off.

The material of the connecting member 350 is not particularly limited, but a magnetic material such as nickel (Ni) or nickel alloy can be used, and Invar having a small thermal expansion is particularly preferable. The thickness from the bottom surface 331 of the holding frame 330 of the connecting member 350 to the lower end of the connecting member 350 located vertically below the holding frame 330 is preferably 10 μm or more and 100 μm or less. The thickness of the inner surface and the outer surface of the connecting member 350 is preferably 50 μm or more and 200 μm or less.

FIG. 16 is a cross-sectional view showing a step of removing the first insulating layer 450 and the second insulating layer 470 in the method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention.
By removing the first insulating layer 450 and the second insulating layer 470, the mask body 310 and the peeling layer 430 are exposed inside the holding frame 330 through the plurality of openings 311.

In the step of FIG. 15, a plating layer is formed around the holding frame 330, on the underlayer 370, and on the second insulating layer 470 by the electroless plating method, and the first insulating layer 450 and the second insulating layer are formed. The structure shown in FIG. 16 may be formed by removing (lifting off) the plating layer formed on the second insulating layer 470 by peeling 470.

FIG. 17 is a cross-sectional view showing a step of peeling the substrate 410 from the mask body 310 in the method of manufacturing the vapor deposition mask 300 according to the embodiment of the present invention. In the present embodiment, first, the outer edges of the mask body 310, the base layer 370, and the connection member 350 are cut using a laser or the like. At this time, the peeling layer 430 may be cut at the same time. However, the invention is not limited to this, and the outer edges of the mask body 310, the base layer 370, and the connection member 350 may extend to the outside without being cut. Further, the first insulating layer 450 shown in FIG. 9 may be formed in the outer edge region of the substrate 410. Thus, when the second insulating layer 470 is removed, the peeling layer 430 at the outer edge of the substrate 410 is exposed, and the peeling layer 430 can be more efficiently dissolved in the next step.

Next, the peeling layer 430 is dissolved by a solution. When, for example, ITO is used as the peeling layer 430, oxalic acid can be used as the solution. The peeling layer 430 is dissolved by the dissolution liquid through the side surface (arrow) and the plurality of openings 311 of the mask body 310. By dissolving the peeling layer 430, the substrate 410 can be peeled from the mask body 310. By dissolving the peeling layer 430 in this manner, the substrate 410 can be peeled while suppressing an unnecessary load on the mask body 310, and the peeling layer 430 does not remain on the back surface of the mask body 310 after peeling. By removing it, the mask deformation due to the stress of the residual film is less likely to occur, and the positional accuracy can be improved. However, the present invention is not limited to this, and when the substrate 410 is glass, for example, a protective layer may be formed on substantially the entire surface of the substrate 410 on the side of the mask body 310, and the substrate 410 may be dissolved with fluorine, for example.

As described above, according to the method for manufacturing the vapor deposition mask 300 according to the present embodiment, the mask main body is connected to the holding frame 330 by the connecting member 350 after the adhesive body is used for temporary fixing. The positional accuracy of 310 can be improved. By connecting the mask main body 310 and the holding frame 330 with the connecting member 350, the base layer 370, and the adhesive member 390, it is possible to improve the adhesive strength and prevent them from peeling off.

<Second Embodiment>
A vapor deposition mask according to an embodiment of the present invention will be described with reference to FIG. FIG. 18 is a plan view of a vapor deposition mask according to an embodiment of the present invention. FIG. 19 is a sectional view of a vapor deposition mask according to an embodiment of the present invention. The present embodiment is the same as the first embodiment except for the shape of the holding frame 330A, and thus repeated description will be omitted.

As shown in FIGS. 18 and 19, in the vapor deposition mask 300A, a connecting member 350A is provided on each frame portion of the lattice-shaped holding frame 330A. A plurality of panel regions 315A are arranged on the mask body 310A. Each panel area 315A is provided with a plurality of openings 311A. Although FIG. 4 and FIG. 5 exemplify the configuration in which one opening is provided in the holding frame 330, as described above, the plurality of openings are provided in the holding frame 330A, and the mask body 310A is provided inside each opening. A panel area 315A may be provided.

<Third Embodiment>
A method for manufacturing a vapor deposition mask according to an embodiment of the present invention will be described with reference to FIG. FIG. 20 is a cross-sectional view showing the method of manufacturing the vapor deposition mask according to the embodiment of the present invention. This embodiment is the same as the first embodiment except that the resin layer 435B is formed between the substrate 410B and the peeling layer 430B, and thus the repeated description is omitted.

FIG. 20 is a cross-sectional view showing a step of peeling the substrate 410B from the mask body 310B in the method of manufacturing the vapor deposition mask 300B according to the embodiment of the present invention. As shown in FIG. 20, first, a resin layer 435B is formed on substantially the entire surface of the substrate 410B, and then the structure of FIG. 20 is obtained by the same steps as in the first embodiment. The material of the resin layer 435B is not particularly limited. As a material for the resin layer 435B, a resin material such as a polyimide resin, an acrylic resin, an epoxy resin, a silicone resin, a fluororesin, or a siloxane resin can be used. The thickness of the resin layer 435B is preferably about 0.5 μm or more and 2 μm or less. The resin layer 435B can be removed by irradiation with the laser 510. By removing the resin layer 435B by laser ablation before dissolving the peeling layer 430B with the dissolving liquid, the substrate 410B can be peeled from the mask main body 310B, and the substrate 410B side of the peeling layer 430B is exposed. The peeling layer 430B can be well dissolved.

<Fourth Embodiment>
A method for manufacturing a vapor deposition mask according to an embodiment of the present invention will be described with reference to FIGS. 21 and 22. 21 and 22 are plan views showing a method for manufacturing a vapor deposition mask according to an embodiment of the present invention. The present embodiment is the same as the first embodiment except that the shape of the region to which the adhesive is applied is different, and thus the repeated description is omitted.

FIG. 21 is a plan view showing a step of applying an adhesive agent to temporarily fix the holding frame 330C to the base layer 370C in the method for manufacturing the vapor deposition mask 300C according to the embodiment of the present invention. In this embodiment, the adhesive containing the solvent 490C and the adhesive member 390C is arranged in a wavy line in the region (dotted line) on the outer periphery of the mask body 310C in which the holding frame 330C is arranged. FIG. 22 is a plan view showing a step of applying an adhesive for temporarily fixing the holding frame 330D to the base layer 370D in the method for manufacturing the vapor deposition mask 300D according to the embodiment of the present invention. In the present embodiment, the adhesive including the solvent 490D and the adhesive member 390D is arranged in a dot shape in the area (dotted line) on the outer periphery of the mask body 310D in which the holding frame 330D is arranged. The shape of the area where the adhesive is applied is not particularly limited as long as it is within the area where the holding frame 330 is arranged. It suffices that the connection member 350 can be temporarily fixed with sufficient strength, and that the plating easily enters the bottom surface 331 of the holding frame 330 when forming the connection member 350.

<Fifth Embodiment>
A method for manufacturing a vapor deposition mask according to an embodiment of the present invention will be described with reference to FIGS. 23 and 24. 23 and 24 are cross-sectional views showing a method of manufacturing a vapor deposition mask according to an embodiment of the present invention. The present embodiment is the same as the first embodiment except that the shapes of the first insulating layer (resist) 450E and the mask main body 310E are different, and therefore repeated description is omitted.

FIG. 23 is a cross-sectional view showing a step of forming a first insulating layer (resist) 450E in the method of manufacturing the vapor deposition mask 300E according to the embodiment of the present invention. In this embodiment, the first insulating layer (resist) 450E is formed in an inverse taper structure. FIG. 24 is a cross-sectional view showing a step of forming the mask body 310E in the method of manufacturing the vapor deposition mask 300E according to the embodiment of the present invention. The mask body 310E can be selectively formed on the peeling layer 430E exposed by the opening of the first insulating layer 450E by an electroplating method in which the peeling layer 430E is energized. Since the first insulating layer (resist) 450E has an inverse taper structure, the mask body 310E is formed in a taper structure. At the time of vapor deposition, the vapor of the material is deposited from the side opposite to the substrate 410E through the opening 311E having the inverse taper structure. Therefore, since the vapor deposition mask 300E has a tapered structure, the vapor of the material can be uniformly deposited in the openings 311E without obstructing the corners.

<Sixth Embodiment>
In this embodiment, a method of manufacturing the display device 200 to which the thin film forming method using the vapor deposition mask described in the first to fifth embodiments is applied will be described. As a display device 200 according to the sixth embodiment, a method of manufacturing an organic EL display device in which a plurality of pixels each having an organic light emitting element (hereinafter, light emitting element) are formed on an insulating substrate 202 will be described. The contents described in the first to fifth embodiments may be omitted.

[Structure of array substrate]
FIG. 25 is a top view of the display device according to the embodiment of the present invention. The display device 200 includes an insulating substrate 202, and a plurality of pixels 204 and a driver circuit 206 (a gate side driver circuit 206a and a source side driver circuit 206b) for driving the pixels 204 are provided thereover. The insulating substrate 202 is, for example, a glass substrate or a resin substrate. The plurality of pixels 204 are periodically arranged, and these define a display area 205. As will be described later, each pixel 204 is provided with a light emitting element 260.

The drive circuit 206 is arranged in the peripheral area around the display area 205. Various wirings (not shown) formed by the patterned conductive film extend from the display region 205 and the driving circuit 206 to one side of the insulating substrate 202 and are exposed on the surface near the end of the insulating substrate 202. The terminal 207 is formed. These terminals 207 are electrically connected to a flexible printed circuit board (FPC) not shown. Various signals for driving the display device 200 are input to the driving circuit 206 and the pixel 204 through the terminal 207. Although not shown, a drive IC having an integrated circuit may be further mounted together with the drive circuit 206 or in place of part of the drive circuit 206.

FIG. 26 is a schematic cross-sectional view of two adjacent pixels 204 (204a and 204b). A pixel circuit is formed in each pixel 204. The structure of the pixel circuit is arbitrary, and in FIG. 26, the driving transistor 210, the storage capacitor 230, the additional capacitor 250, and the light emitting element 260 are shown.

Each element included in the pixel circuit is provided on the insulating substrate 202 via the undercoat 208. The driving transistor 210 includes a semiconductor film 212, a gate insulating film 214, a gate electrode 216, a source electrode 220, and a drain electrode 222. The gate electrode 216 is arranged so as to intersect at least part of the semiconductor film 212 with the gate insulating film 214 interposed therebetween. The semiconductor film 212 has a drain region 212a, a source region 212b, and a channel 212c. The channel 212c is a region where the semiconductor film 212 and the gate electrode 216 overlap. The channel 212c is provided between the drain region 212a and the source region 212b.

The capacitor electrode 232 exists in the same layer as the gate electrode 216 and overlaps the drain region 212a with the gate insulating film 214 interposed therebetween. An interlayer insulating film 218 is provided over the gate electrode 216 and the capacitor electrode 232. Openings reaching the source region 212b and the drain region 212a are formed in the interlayer insulating film 218 and the gate insulating film 214, respectively. The source electrode 220 and the drain electrode 222 are arranged inside these openings. The drain electrode 222 overlaps with the capacitor electrode 232 via the interlayer insulating film 218. A storage capacitor 230 is formed by the drain region 212a, the capacitor electrode 232, the gate insulating film 214 between them, the capacitor electrode 232, the drain electrode 222, and the interlayer insulating film 218 between them.

A planarization film 240 is provided on the driving transistor 210 and the storage capacitor 230. The planarization film 240 has an opening reaching the drain electrode 222. A connection electrode 242 covering this opening and a part of the upper surface of the planarization film 240 is provided so as to be in contact with the drain electrode 222. An additional capacitance electrode 252 is provided on the flattening film 240. A capacitor insulating film 254 is provided so as to cover the connection electrode 242 and the additional capacitor electrode 252. The capacitor insulating film 254 exposes part of the connection electrode 242 in the opening of the planarization film 240. As a result, the pixel electrode 262 and the drain electrode 222 of the light emitting element 260 are electrically connected via the connection electrode 242. An opening 256 is provided in the capacitor insulating film 254. The partition 258 provided over the capacitor insulating film 254 and the planarization film 240 are in contact with each other through the opening 256. With this structure, impurities in the planarization film 240 can be removed through the opening 256, and the reliability of the pixel circuit and the light emitting element 260 can be improved. The formation of the connection electrode 242 and the opening 256 is optional.

A pixel electrode 262 is provided on the capacitor insulating film 254 so as to cover the connection electrode 242 and the additional capacitor electrode 252. The capacitance insulating film 254 is provided between the additional capacitance electrode 252 and the pixel electrode 262. This structure constitutes the additional capacitor 250. The pixel electrode 262 is shared by the additional capacitor 250 and the light emitting element 260. A partition wall 258 is provided on the pixel electrode 262 to cover an end portion of the pixel electrode 262. The structure from the insulating substrate 202 and the undercoat 208 to the partition 258 may be referred to as an array substrate. The array substrate can be manufactured by applying a known material or method, and thus the description thereof will be omitted.

[Configuration of Light Emitting Element 260]
As shown in FIG. 26, the light emitting element 260 includes a pixel electrode 262, an EL layer 264, and a counter electrode 272. The EL layer 264 and the counter electrode 272 are provided so as to cover the pixel electrode 262 and the partition 258. In the example shown in FIG. 26, the EL layer 264 has a hole injecting/transporting layer 266, a light emitting layer 268 (light emitting layers 268a and 268b), and an electron injecting/transporting layer 270. The hole injecting/transporting layer 266 and the electron injecting/transporting layer 270 are provided commonly to the plurality of pixels 204 and shared by the plurality of pixels 204. Similarly, the counter electrode 272 covers the plurality of pixels 204 and is shared by the plurality of pixels 204. On the other hand, the light emitting layer 268 is provided individually for each pixel 204.

As the structure and material of each of the pixel electrode 262, the counter electrode 272, and the EL layer 264, known materials can be applied. For example, the EL layer 264 may have various functional layers such as a hole block layer, an electron block layer, and an exciton block layer in addition to the above structure.

The structure of the EL layer 264 may be the same between the plurality of pixels 204, or a part of the structure may be different between the adjacent pixels 204. For example, the pixel 204 may be configured such that the structure or material of the light emitting layer 268 is different between the adjacent pixels 204 and the other layers have the same structure.

[Method for forming light emitting element 260]
The EL layer 264 and the counter electrode 272 can be formed using the vapor deposition masks of the first and second embodiments. Hereinafter, a method for forming the EL layer 264 and the counter electrode 272 will be described with reference to FIGS. In these figures, the EL layer 264 and the counter electrode 272 are formed on the partition wall 258 and the pixel electrode 262. However, at the time of vapor deposition of the EL layer 264 and the counter electrode 272, the vapor deposition source 112 is disposed below the insulating substrate 202, and the insulating substrate 202 is disposed so that the vapor deposition region faces the vapor deposition source 112. That is, the partition 258 and the pixel electrode 262 are arranged closer to the vapor deposition source 112 than the insulating substrate 202.

As shown in FIGS. 27 and 28, the hole injecting/transporting layer 266 is formed on the array substrate by using the vapor deposition method. Since the hole injecting/transporting layer 266 is shared by all the pixels 204, the evaporation mask 300 used for depositing the hole injecting/transporting layer 266 has one opening 311 overlapping the entire display region 205. Although not described in detail, the vapor deposition mask 300 is arranged between the array substrate and the vapor deposition source 112 so that the opening 311 overlaps the display region 205, and the material contained in the hole injection/transport layer 266 is vaporized in the vapor deposition source 112. As a result, the hole injecting/transporting layer 266 is formed.

Next, the light emitting layer 268 is formed on the hole injecting/transporting layer 266. In the case of performing full-color display, a plurality of pixels 204a that emit red light, pixels 204b that emit blue light, and pixels 204c that emit green light are arranged in the display region 205. Note that the pixels 204a, 204b, and 204c are simply referred to as the pixels 204 unless otherwise specified. When the pixels 204 are arranged in a matrix, the pixels 204 having different emission colors are normally arranged periodically in sequence. The light emitting layer 268 is formed in different steps for each emission color. For example, when forming the pixel 204a which emits red light, as shown in FIG. 29, the vapor deposition mask is formed so that the opening 311 of the vapor deposition mask 300 (mask body 310) overlaps the pixel 204a and the non-opening portion overlaps the pixels 204b and 204c. 300 are arranged.

In this way, the vapor deposition mask 300 provided with the opening 311 is positioned at the position where the opening 311 overlaps with the pixel 204a and the non-opening part overlaps with the other pixels 204b and 204c, and the lower surface 148 of the vapor deposition mask 300 is placed on the insulating substrate 202 rather than the upper surface 150. They are arranged close to each other (FIGS. 29 and 30), and the material of the light emitting layer 268a is vapor-deposited on the pixel 204a. As a result, the light emitting layer 268a is selectively formed on the pixel electrode 262 of the pixel 204a (FIG. 31). Note that in FIG. 31, the vapor deposition mask 300 (mask body 310) is arranged to be in contact with the hole injecting/transporting layer 266 during vapor deposition, but the vapor deposition mask 300 may be arranged to be in contact with the partition wall 258, or It may be arranged apart from the partition wall 258 and the hole injection/transport layer 266.

Next, the light emitting layer 268b is formed similarly to the formation of the light emitting layer 268a. As shown in FIGS. 32 and 33, at the position where the opening 311 overlaps with the pixel 204b and the non-opening overlaps with the other pixels 204a and 204c, the lower surface 148 of the evaporation mask 300 is placed on the insulating substrate 202 rather than the upper surface 150. They are arranged close to each other (FIG. 32), and the material of the light emitting layer 268b is vapor-deposited on the pixel 204b. As a result, the light emitting layer 268b is selectively formed on the pixel electrode 262 of the pixel 204b (FIG. 33). The light emitting layer 268c is formed on the pixel 204c by the same method.

Next, the electron injection/transport layer 270 and the counter electrode 272 are formed. Since the electron injecting/transporting layer 270 and the counter electrode 272 are shared by all the pixels 204, the electron injecting/transporting layer 270 and the counter electrode 272 can be formed using the evaporation mask 300 similar to the evaporation of the hole injecting/transporting layer 266. As a result, the structure shown in FIG. 26 can be obtained. Although not shown, an optical adjustment layer and a polarizing plate for adjusting light from the light emitting layer 268, and a protective film and a counter substrate for protecting the light emitting element 260 may be provided on the counter electrode 272.

The respective embodiments and modifications described above as the embodiments of the present invention can be implemented in an appropriate combination unless they contradict each other. Further, based on the display device of each embodiment, those skilled in the art appropriately added, deleted or changed the design of the components, or added or omitted steps or changed the conditions, As long as it has the gist, it is included in the scope of the present invention.

In this specification, the case of an EL display device is mainly illustrated as a disclosure example, but as another application example, another self-luminous display device, a liquid crystal display device, or an electronic paper type display having an electrophoretic element or the like. Examples include any flat panel type display device such as a device. Further, the present invention can be applied to medium to small size to large size without particular limitation.

Naturally, even if other operational effects different from the operational effects brought about by the aspects of the above-described embodiments are clear from the description of the present specification or can be easily predicted by those skilled in the art, It is understood that it is brought about by the present invention.

10: vapor deposition apparatus, 100: vapor deposition chamber, 102: load lock door, 104: vapor deposition substrate, 108: holder, 110: moving mechanism, 112: vapor deposition source, 114: shutter, 120: storage container, 122: heating unit, Reference numeral 124: vapor deposition holder, 126: heater, 128: metal plate, 130: opening, 132: guide plate, 148: lower surface, 149: third surface, 150: upper surface, 160a, 160b: critical surface, 200: display device, 202: Insulating substrate, 204: Pixel, 205: Display region, 206: Driving circuit, 207: Terminal, 208: Undercoat, 210: Driving transistor, 212: Semiconductor film, 212a: Drain region, 212b: Source region, 212c: Channel: 214: Gate insulating film, 216: Gate electrode, 218: Interlayer insulating film, 220: Source electrode, 222: Drain electrode, 230: Storage capacitor, 232: Capacitance electrode, 240: Flattening film, 242: Connection electrode, 250: additional capacitance, 252: additional capacitance electrode, 254: capacitive insulating film, 256: opening, 258: partition wall, 260: light emitting element, 262: pixel electrode, 264: EL layer, 266: hole injection/transport layer, 268: Light emitting layer, 270: Electron injection/transport layer, 272: Counter electrode, 300: Vapor deposition mask, 310: Mask body, 311: Opening, 313: Third outer edge, 315: Panel region, 330: Holding frame, 331: Holding frame Bottom surface of 330, 333: inner surface of holding frame 330, 335: outer surface of holding frame 330, 350: connecting member, 353: second outer edge, 355: second inner edge, 370: base layer, 390: adhesive member, 410 : Substrate, 430: Release layer, 450: First insulating layer, 470: Second insulating layer, 490: Solvent

Claims (27)

Forming a mask body having a plurality of openings on the substrate;
Forming an insulating layer covering the plurality of openings and exposing the outer periphery of the mask body;
An adhesive member is arranged on the outer periphery of the mask body,
On the outer periphery of the mask body, a holding frame is arranged so as to be in contact with the adhesive member,
A connection member is formed between the mask body and the holding frame,
Removing the insulating layer,
Peeling the substrate from the mask body, a method of manufacturing a vapor deposition mask. The method for manufacturing a vapor deposition mask according to claim 1, wherein the connection member is formed by an electrolytic plating method. The method for manufacturing a vapor deposition mask according to claim 1, wherein the connection member is formed so as to be in contact with the bottom surface and the side surface of the holding frame. The method of manufacturing a vapor deposition mask according to claim 1, wherein forming the connecting member includes embedding the adhesive member in the connecting member. The method for manufacturing a vapor deposition mask according to claim 1, wherein the connection member is formed using a material containing Invar or nickel. To arrange the adhesive member, the adhesive member is applied with an adhesive dispersed in a solvent,
The method for manufacturing a vapor deposition mask according to claim 1, further comprising: evaporating the solvent after disposing the holding frame. The method for manufacturing a vapor deposition mask according to claim 1, wherein the adhesive member is alumina particles or silicate glass powder. The method for manufacturing a vapor deposition mask according to claim 1, further comprising: forming an underlayer on an outer periphery of the mask body before disposing the adhesive member. The method for manufacturing a vapor deposition mask according to claim 8, wherein the underlayer is formed by an electrolytic plating method. The method for producing a vapor deposition mask according to claim 8, wherein the underlayer is formed using a material containing Invar or nickel. Forming a conductive release layer on the substrate prior to forming the mask body;
The method for manufacturing a vapor deposition mask according to claim 1, wherein peeling the substrate from the mask body dissolves the peeling layer with a solution. The release layer is formed using a material containing ITO or IZO,
The method for manufacturing a vapor deposition mask according to claim 11, wherein the solution is oxalic acid. Forming a resin layer on the substrate before forming the release layer,
The method for manufacturing a vapor deposition mask according to claim 11 or 12, wherein peeling the substrate from the mask body further includes removing the resin layer by laser ablation. The method for manufacturing a vapor deposition mask according to claim 11, wherein the substrate is glass. The method of manufacturing a vapor deposition mask according to claim 1, wherein the mask body is formed by an electrolytic plating method. The method of manufacturing a vapor deposition mask according to claim 1, wherein forming the mask body further includes forming a resist having an inverse taper structure in a region where the plurality of openings are arranged. .. The method of manufacturing a vapor deposition mask according to claim 1, wherein the mask body is formed using a material containing Invar or nickel. A mask body having a plurality of openings,
A holding frame arranged on the outer periphery of the mask body,
A vapor deposition mask comprising: a connecting member arranged on the bottom surface and the side surface of the holding frame, the connecting member being arranged between the bottom surface of the holding frame and the mask body. The vapor deposition mask according to claim 18, further comprising an adhesive member disposed between the mask body and the holding frame. The vapor deposition mask according to claim 19, wherein the adhesive member contacts a bottom surface of the holding frame. The vapor deposition mask according to claim 19 or 20, further comprising a base layer disposed between the mask body and the connection member. The vapor deposition mask according to claim 21, wherein the adhesive member is in contact with the upper surface of the base layer. The vapor deposition mask according to claim 19, wherein the adhesive member is dispersed in the connection member. The vapor deposition mask according to claim 18, wherein an outer edge of the connecting member and an outer edge of the mask body are provided outside an outer edge of the holding frame. The vapor deposition mask according to any one of claims 18 to 24, wherein an inner edge of the connecting member is provided inside an inner edge of the holding frame. The vapor deposition mask according to claim 18, wherein the connection member is a plating layer. The vapor deposition mask according to any one of claims 18 to 26, wherein the mask body is a plating layer.

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