WO2016098825A1 - Procédé de production d'un élément semi-conducteur optique couvert - Google Patents

Procédé de production d'un élément semi-conducteur optique couvert Download PDF

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Publication number
WO2016098825A1
WO2016098825A1 PCT/JP2015/085268 JP2015085268W WO2016098825A1 WO 2016098825 A1 WO2016098825 A1 WO 2016098825A1 JP 2015085268 W JP2015085268 W JP 2015085268W WO 2016098825 A1 WO2016098825 A1 WO 2016098825A1
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WIPO (PCT)
Prior art keywords
optical semiconductor
semiconductor element
layer
phosphor layer
sheet
Prior art date
Application number
PCT/JP2015/085268
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English (en)
Japanese (ja)
Inventor
吉田　直子
弘司 野呂
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日東電工株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from JP2015217792A external-priority patent/JP2016119454A/ja
Priority claimed from JP2015243519A external-priority patent/JP6543564B2/ja
Application filed by 日東電工株式会社 filed Critical 日東電工株式会社
Publication of WO2016098825A1 publication Critical patent/WO2016098825A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a method for manufacturing a coated optical semiconductor element.
  • a ceramic ink in which a phosphor is dispersed is applied to LEDs arranged at predetermined intervals on an adhesive sheet, and then the ceramic ink is cured to coat the LEDs with a ceramic ink layer.
  • a method is proposed in which the ceramic ink layer between adjacent LEDs is cut and separated, and then the LED and the ceramic ink layer are peeled off from the adhesive sheet and flip-chip mounted on a circuit board (see, for example, Patent Document 1). ).
  • the ceramic ink layer is further sealed with a transparent resin while the LED is mounted on the circuit board.
  • An object of the present invention is to provide a method for manufacturing a coated optical semiconductor element that can reliably peel the coated optical semiconductor element from the temporary fixing sheet.
  • the present invention [1] includes a plurality of optical semiconductor elements temporarily fixed on a temporarily fixing sheet at intervals, and the temporarily fixing sheet exposing the plurality of optical semiconductor elements from the plurality of optical semiconductor elements.
  • the step (4) of peeling the coated optical semiconductor element from the temporary fixing sheet In the step (3), the first coating layer is filled in the groove. Interposed between the second covering layer and the temporary fixing sheet.
  • the first coating layer is interposed between the second coating layer filled in the groove and the temporarily fixed sheet, so that the second coating layer is formed on the fixed sheet. Direct contact is prevented. Therefore, even if the pressure-sensitive adhesive force of the second coating layer is high, the second coating layer can be prevented from adhering to the temporary fixing sheet.
  • the coated optical semiconductor element can be reliably peeled from the temporarily fixed sheet.
  • the coated optical semiconductor element is transferred from the temporarily fixed sheet to a transfer sheet, and the adhesive force of the coated optical semiconductor element to the transfer sheet is the coated optical semiconductor.
  • seat of an element is included.
  • step (4) since the adhesive force of the coated optical semiconductor element to the transfer sheet is higher than the adhesive force of the coated optical semiconductor element to the temporary fixing sheet, in step (4), the coated optical semiconductor element is temporarily fixed. Transfer from the sheet to the transfer sheet can be performed more reliably.
  • the present invention [3] includes the method for manufacturing a coated optical semiconductor element according to [1] or [2], wherein the first coating layer is a first phosphor layer containing a phosphor.
  • the first coating layer is the first phosphor layer containing the phosphor
  • the light emitted from the optical semiconductor element can be wavelength-converted by the first phosphor layer.
  • the groove is filled with the second coating layer so as to expose the upper surface of the first phosphor layer, and the coated optical semiconductor according to [3] A device manufacturing method is included.
  • step (3) the coating layer is filled in the groove so as to expose the upper surface of the first phosphor layer, so that a coated optical semiconductor element that emits light having upward directivity is obtained. Can do.
  • the groove is filled with the second coating layer so as to cover the upper surface of the first coating layer.
  • the present invention [6] provides the method for producing a coated optical semiconductor element according to any one of [1] to [3], wherein the second coating layer is a second phosphor layer containing a phosphor. Contains.
  • the second coating layer is a second phosphor layer containing a phosphor
  • the wavelength of light emitted from the optical semiconductor element can be converted by the second phosphor layer.
  • the groove is filled with the second covering layer so as to cover the upper surface of the second phosphor layer.
  • the manufacturing method is included.
  • the coating layer is filled in the groove so as to expose the upper surface of the second phosphor layer, so that a coated optical semiconductor element that emits light having upward directivity is obtained. Can do.
  • the coated optical semiconductor element in the step (4), can be reliably peeled from the temporarily fixed sheet.
  • FIG. 1A to 1E are manufacturing process diagrams of a first embodiment of a method for manufacturing a coated optical semiconductor element according to the present invention, in which FIG. 1A is a process of arranging a plurality of optical semiconductor elements on a temporary fixing sheet, FIG. Is a step (1) of covering a plurality of optical semiconductor elements with a first phosphor layer, FIG. 1C is a step (2) of providing a groove in the first phosphor layer located between adjacent optical semiconductor elements, and FIG. 1D is a step (i) of disposing a protective sheet on the upper surface of the first phosphor layer, and FIG.
  • FIG. 1E is a step of disposing the temporary fixing sheet, the optical semiconductor element, the first phosphor layer, and the protective sheet under vacuum ( ii) and the step (iii) of disposing a coating material to form a sealed space.
  • FIG. 2F to 2I are manufacturing process diagrams of the first embodiment of the method for manufacturing a coated optical semiconductor device of the present invention, following FIG. 1E, in which FIG. 2F is a process of flowing the coating material into the sealed space (iv 2G shows the step (v) for peeling off the protective sheet, FIG. 2H shows the step for separating the optical semiconductor element, and FIG. 2I shows the step (4) for transferring the coated optical semiconductor element to the transfer sheet.
  • FIG. 3A to 3C are plan views in the respective steps of the first embodiment, FIG.
  • FIG. 3A is a plan view of step (i) corresponding to FIG. 1D
  • FIG. 3B is a step (ii) corresponding to FIG. 1E
  • FIG. 3C is a plan view of step (iii) corresponding to FIG. 2F.
  • FIG. 4 shows a process of mounting the coated optical semiconductor element shown in FIG. 2I on a substrate.
  • 5A to 5C are manufacturing process diagrams of the second embodiment of the method for manufacturing a coated optical semiconductor element according to the present invention, in which FIG. 5A is a process of covering a plurality of optical semiconductor elements with a first phosphor layer ( 1), FIG. 5B is a step (2) of providing a groove in the first phosphor layer located between the adjacent optical semiconductor elements, and FIG.
  • FIG. 5C is a case where the groove is filled with the second coating layer, and the upper first fluorescence.
  • a step (3) of providing the body layer so as to cover the body layer is shown.
  • 6D and FIG. 6E are manufacturing process diagrams of the second embodiment of the method for manufacturing the coated optical semiconductor element of the present invention, following FIG. 5C, and FIG. 6D is a process of dividing the optical semiconductor element into individual pieces, FIG. 6E shows the process (4) which transfers a covering optical semiconductor element to a transfer sheet.
  • FIG. 7 shows a process of mounting the coated optical semiconductor element shown in FIG. 6E on a substrate.
  • FIG. 8 shows a cross-sectional view of a coated optical semiconductor element obtained by the manufacturing method of the third embodiment.
  • FIG. 9 shows a cross-sectional view of a coated optical semiconductor element obtained by the manufacturing method of the fourth embodiment.
  • FIG. 10 shows a cross-sectional view of a coated optical semiconductor element obtained by the manufacturing method of the fifth embodiment.
  • FIG. 11 is a cross-sectional view of a coated optical semiconductor element obtained by the manufacturing method of the sixth embodiment.
  • 12A to 12D are manufacturing process diagrams of the coated optical semiconductor device of Comparative Example 1.
  • FIG. 12A shows the step (2) of providing an opening in the first phosphor layer
  • FIG. 12B shows the second coating layer.
  • Step (3) of providing FIG. 12C shows a step of cutting the second coating layer
  • FIG. 12D shows a step (4) of transferring the coated optical semiconductor element to the transfer sheet.
  • FIG. 13A to 13D are manufacturing process diagrams of the coated optical semiconductor element of Comparative Example 2, in which FIG. 13A shows the step (2) of providing an opening in the first phosphor layer, and FIG. 13B shows the second coating layer.
  • 14A to 14D are manufacturing process diagrams of the coated optical semiconductor device of Comparative Example 3, in which FIG. 14A shows the step (2) of providing an opening in the first coating layer, and FIG. 14B shows the second phosphor layer.
  • Step (3) of providing, FIG. 14C shows a step of cutting the second phosphor layer, and FIG.
  • FIG. 14D shows a step (4) of transferring the coated optical semiconductor element to the transfer sheet.
  • 15A to 15D are manufacturing process diagrams of the seventh embodiment of the method for manufacturing a coated optical semiconductor element of the present invention, in which FIG. 15A is a process of arranging a plurality of optical semiconductor elements on a temporary fixing sheet, FIG. FIG. 15C shows the step of coating the plurality of optical semiconductor elements with the first phosphor layer, FIG. 15C shows the step of transferring the first covering element assembly to the first transfer sheet, and FIG. 15D shows the first phosphor layer. Step (2) for providing a groove is shown.
  • 16E to 16G are manufacturing process diagrams of the seventh embodiment of the manufacturing method of the coated optical semiconductor element of the present invention, following FIG. 15D.
  • FIG. 15D is a process of arranging a plurality of optical semiconductor elements on a temporary fixing sheet
  • FIG. 15C shows the step of coating the plurality of optical semiconductor elements with the first phosphor layer
  • FIG. 15C shows the step of transferring
  • FIG. 16E illustrates a process of filling the groove with the second coating layer ( 3)
  • FIG. 16F shows a step of separating the optical semiconductor element
  • FIG. 16G shows a step of removing the upper end portion of the second coating layer 4.
  • FIG. 17 shows a process of mounting the coated optical semiconductor element shown in FIG. 16G on a substrate.
  • 18A and 18B are manufacturing process diagrams of an eighth embodiment of the method for manufacturing a coated optical semiconductor element of the present invention, in which FIG. 18A is a process of transferring the coated optical semiconductor element to a second transfer sheet, FIG. Shows the step of removing the bottom of the first phosphor layer.
  • FIG. 19 shows a process of mounting the coated optical semiconductor element shown in FIG. 18B on a substrate.
  • the vertical direction of the paper surface is the vertical direction (first direction, thickness direction)
  • the upper side of the paper surface is the upper side (one side in the first direction, the one side in the thickness direction)
  • the lower side of the paper surface is the lower side (first Direction other side, thickness direction other side).
  • the left and right direction on the paper surface is the left and right direction (second direction orthogonal to the first direction)
  • the left side on the paper surface is the left side (second side in the second direction)
  • the right side on the paper surface is the right side (the other side in the second direction).
  • the paper thickness direction is the front-rear direction (the third direction orthogonal to the first direction and the second direction), the front side of the paper is the front side (one side in the third direction), and the back side of the paper is the rear side (the other side in the third direction). is there. Specifically, it conforms to the direction arrow in each figure.
  • step (1) a plurality of optical semiconductor elements 1 and a first phosphor layer 2 are prepared. That is, the plurality of optical semiconductor elements 1 temporarily fixed to the upper surface of the first temporary fixing sheet 10 with a space therebetween, and the first phosphor on the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1.
  • a first phosphor layer 2 covering a plurality of optical semiconductor elements 1 is prepared so that the layer 2 is in direct contact.
  • a plurality of optical semiconductor elements 1 are temporarily fixed to the upper surface of the first temporary fixing sheet 10 at intervals from each other.
  • the optical semiconductor element 1 is an optical semiconductor element that converts electrical energy into optical energy.
  • the optical semiconductor element does not include a rectifier such as a transistor having a technical field different from that of the optical semiconductor element.
  • the optical semiconductor element 1 has, for example, a substantially rectangular shape in cross-sectional view and a substantially rectangular shape in plan view in which the thickness (maximum length in the vertical direction) is shorter than the length in the plane direction (specifically, the length in the left-right direction and the length in the front-rear direction). It has a shape.
  • a part of the lower surface of the optical semiconductor element 1 is formed by bumps (not shown). The bump is configured to be electrically connected to a terminal (not shown in FIG. 4) provided on the upper surface of the substrate 50 (see FIG. 4, described later).
  • optical semiconductor element 1 examples include a blue LED (light emitting diode element) that emits blue light.
  • the thickness (length in the vertical direction) L1 of the optical semiconductor element 1 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 1000 ⁇ m or less, preferably 500 ⁇ m or less.
  • the width (the length in the left-right direction and the length in the front-rear direction) L2 of the optical semiconductor element 1 is, for example, 0.1 ⁇ m or more, preferably 0.2 ⁇ m or more, and for example, 5000 ⁇ m or less, preferably 2000 ⁇ m or less. is there.
  • the first temporarily fixing sheet 10 temporarily fixes the plurality of optical semiconductor elements 1, and then covers and seals the plurality of optical semiconductor elements 1 together with the first phosphor layer 2.
  • 1 is a support member for forming the groove 3 in the phosphor layer 2.
  • the first temporary fixing sheet 10 includes a temporary fixing layer 11 and a support layer 12.
  • the temporary fixing layer 11 is provided on the temporary fixing layer 11 in order to temporarily fix the plurality of optical semiconductor elements 1.
  • the temporary fixing layer 11 has a pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer is formed in, for example, a substantially flat plate shape extending from the pressure-sensitive adhesive in the left-right direction and the front-rear direction.
  • the pressure-sensitive adhesive include a pressure-sensitive adhesive whose pressure-sensitive adhesive force is reduced by treatment (specifically, irradiation with active energy rays).
  • the temporary fixing layer 11 can have one pressure-sensitive adhesive layer and a base material (not shown) provided on the lower surface of the pressure-sensitive adhesive layer. Further, the temporary fixing layer 11 may have two pressure-sensitive adhesive layers and a base material (not shown) interposed therebetween.
  • the thickness of the temporary fixing layer 11 is, for example, 5 ⁇ m or more, preferably 10 ⁇ m or more, and for example, 200 ⁇ m or less, preferably 150 ⁇ m or less.
  • the support layer 12 is provided on the lower surface of the temporary fixing layer 11 in order to support the temporary fixing layer 11.
  • the support layer 12 include polymer films such as a polyethylene film and a polyester film (such as PET), such as a ceramic sheet, such as a metal foil.
  • a polymer film is used.
  • the thickness of the support layer 12 is, for example, 1 ⁇ m or more, preferably 10 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the plurality of optical semiconductor elements 1 are temporarily fixed to the upper surface of the first temporary fixing sheet 10 at intervals. Specifically, a plurality of optical semiconductor elements 1 are aligned and arranged on the upper surface of the temporary fixing layer 11 at intervals in the left-right direction and the front-rear direction. More specifically, the lower surfaces of the plurality of optical semiconductor elements 1 are brought into contact with the upper surface of the temporary fixing layer 11 of the first temporary fixing sheet 10.
  • the interval L3 between the adjacent optical semiconductor elements 1 is, for example, 0.1 mm or more, preferably 0.3 mm or more, and for example, 3 mm or less, preferably 2 mm or less.
  • the plurality of optical semiconductor elements 1 are then placed on the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1 by the first phosphor layer 2. Cover in direct contact.
  • the first phosphor layer 2 is prepared.
  • the first phosphor layer 2 has a dimension including a plurality of optical semiconductor elements 1 in a plan view, and has a substantially rectangular flat plate shape.
  • the first phosphor layer 2 is a wavelength conversion layer that converts part of the blue light emitted from the optical semiconductor element 1 into, for example, yellow light, red light, green light, and the like.
  • the first phosphor layer 2 is made of a phosphor resin composition.
  • the phosphor resin composition contains a phosphor and a transparent resin composition.
  • Examples of the phosphor include a yellow phosphor capable of converting blue light into yellow light, a red phosphor capable of converting blue light into red light, and a green phosphor capable of converting blue light into green light. Examples include the body.
  • yellow phosphor examples include silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)), for example, Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce), Tb 3 Al 3 O 12 : Ce (TAG (terbium, aluminum, garnet): Ce) Examples thereof include oxynitride phosphors such as Ca- ⁇ -SiAlON.
  • silicate phosphors such as (Ba, Sr, Ca) 2 SiO 4 ; Eu, (Sr, Ba) 2 SiO 4 : Eu (barium orthosilicate (BOS)
  • Y 3 Al Garnet-type phosphors having a garnet-type crystal structure such as 5 O 12 : Ce (YAG (yttrium, aluminum, garnet): Ce
  • red phosphor examples include nitride phosphors such as CaAlSiN 3 : Eu and CaSiN 2 : Eu.
  • the green phosphor for example, Lu 3 Al 5 O 12: Ce: garnet phosphors (LuAG ruthenium aluminum garnet) and the like.
  • a yellow phosphor alone or a combination of a red phosphor and a green phosphor is used.
  • Examples of the shape of the phosphor include a spherical shape, a plate shape, and a needle shape.
  • spherical shape is mentioned from a fluid viewpoint.
  • the average value of the maximum length of the phosphor (in the case of a sphere, the average particle diameter) is, for example, 0.1 ⁇ m or more, preferably 1 ⁇ m or more, and for example, 200 ⁇ m or less, preferably 100 ⁇ m or less. It is.
  • the blending ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass with respect to 100 parts by mass of the transparent resin composition. It is below mass parts.
  • the blending ratio of the phosphor is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, for example, 90% by mass or less, preferably 80% by mass with respect to the phosphor resin composition. It is below mass%.
  • the transparent resin composition examples include a transparent resin composition used as a sealing material for sealing the optical semiconductor element 1.
  • examples of the transparent resin composition include a thermosetting resin composition and a thermoplastic resin composition, preferably a thermosetting resin composition.
  • thermosetting resin composition examples include a two-stage reaction curable resin composition and a one-stage reaction curable resin composition.
  • the two-stage reaction curable resin composition has two reaction mechanisms. In the first stage reaction, the A stage state is changed to B stage (semi-cured), and then in the second stage reaction, B C stage (complete curing) can be performed from the stage state. That is, the two-stage reaction curable resin composition is a thermosetting resin composition that can be in a B stage state under appropriate heating conditions. However, the two-stage reaction curable resin composition can be changed from the A-stage state to the C-stage state at a time without maintaining the B-stage state by intense heating.
  • the B stage state is a state between the A stage state in which the thermosetting resin composition is in a liquid state and the C stage state in which the thermosetting resin composition is completely cured. It is a semi-solid or solid state whose modulus is smaller than the elastic modulus in the C-stage state.
  • the first-stage reaction curable resin composition has one reaction mechanism, and can be changed from the A-stage state to the C-stage (completely cured) by the first-stage reaction.
  • the first-stage reaction curable resin composition can be changed from the A-stage state to the B-stage state in the middle of the first-stage reaction.
  • the thermosetting resin composition that can be C-staged (completely cured) from the B-stage state is included. That is, this thermosetting resin composition is a thermosetting resin composition that can be in a B-stage state.
  • the first-stage reaction curable resin composition cannot be controlled to stop in the middle of the first-stage reaction, that is, cannot enter the B-stage state, and is changed from the A-stage state to the C-stage ( A thermosetting resin composition that completely cures).
  • the transparent resin composition examples include silicone resin, epoxy resin, urethane resin, polyimide resin, phenol resin, urea resin, melamine resin, and unsaturated polyester resin.
  • a silicone resin is used as the transparent resin composition.
  • the above-described transparent resin composition may be of the same type or a plurality of types.
  • silicone resin examples include silicone resin compositions such as an addition reaction curable silicone resin composition and a condensation / addition reaction curable silicone resin composition from the viewpoint of transparency, durability, heat resistance, and light resistance. . Silicone resins may be used alone or in combination.
  • the addition reaction curable silicone resin composition is a one-stage reaction curable resin composition and contains, for example, an alkenyl group-containing polysiloxane, a hydrosilyl group-containing polysiloxane, and a hydrosilylation catalyst.
  • a phenyl silicone resin composition that is a one-stage reaction curable resin composition that can be in a B-stage state, for example, a B-stage state.
  • a phenyl type silicone resin composition is mentioned.
  • addition reaction curable silicone resin composition examples include an addition reaction curable silicone resin composition described in JP-A-2015-073084.
  • the condensation / addition reaction curable silicone resin composition is a two-stage reaction curable resin, and specifically, for example, those described in JP 2010-265436 A, JP 2013-187227 A, and the like.
  • 1 to 8 condensation / addition reaction curable silicone resin compositions for example, JP 2013-091705 A, JP 2013-001815 A, JP 2013-001814 A, JP 2013-001813 A, Examples thereof include a cage-type octasilsesquioxane-containing silicone resin composition described in JP2012-102167A.
  • the addition reaction curable silicone resin composition and the condensation / addition reaction curable silicone resin composition are solid and have both thermoplasticity and thermosetting properties.
  • the phosphor resin composition if necessary, known pigments (including fillers), silane coupling agents, anti-aging agents, modifiers, surfactants, dyes, anti-discoloring agents, ultraviolet absorbers, etc. These additives can be added at an appropriate ratio.
  • the first phosphor layer 2 can be supported and protected by a release sheet (not shown).
  • a release sheet (not shown) is used to protect the first phosphor layer 2 until the optical semiconductor element 1 is sealed by the first phosphor layer 2 (the upper surface in FIG. 1A). ) Is detachably attached.
  • a peeling sheet (not shown), polymer films, such as a polyethylene film and a polyester film (PET etc.), for example, ceramic sheets, for example, metal foil etc. are mentioned, for example.
  • a polymer film is used.
  • the thickness of the release sheet (not shown) is, for example, 1 ⁇ m or more, preferably 10 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the first phosphor layer 2 contains a phenyl silicone resin composition (one-step reaction curable resin composition (addition reaction curable silicone resin composition)), hydrosilyl of an alkenyl group and a hydrosilyl group The chemical reaction proceeds halfway and is stopped once.
  • a phenyl silicone resin composition one-step reaction curable resin composition (addition reaction curable silicone resin composition)
  • hydrosilyl of an alkenyl group and a hydrosilyl group The chemical reaction proceeds halfway and is stopped once.
  • the thickness L0 of the first phosphor layer 2 before covering the optical semiconductor element 1 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the first phosphor layer 2 is pressure-bonded to the plurality of optical semiconductor elements 1 and the first temporary fixing sheet 10.
  • the 1st fluorescent substance layer 2 is thermocompression-bonded (heat press) with respect to the peeling sheet 6 which supports the some optical semiconductor element 1.
  • the first phosphor layer 2, the plurality of optical semiconductor elements 1, and the first temporary fixing sheet 10 are installed in a flat plate press or the like equipped with a heat source.
  • the flat plate press includes a lower mold having a flat upper surface, and an upper mold having a flat lower surface disposed on the upper side thereof.
  • the 1st fluorescent substance layer 2, the some optical semiconductor element 1, and the 1st temporary fixing sheet 10 are hot-pressed by flat plate press.
  • the temperature in the flat plate press is equal to or higher than the thermoplastic temperature of the addition reaction curable silicone resin composition, preferably From the viewpoint of carrying out the thermoplastic and thermosetting of the addition reaction curable silicone resin composition at one time, it is a thermosetting temperature or higher, specifically, for example, 60 ° C or higher, preferably 80 ° C or higher. Also, for example, 150 ° C. or lower, preferably 120 ° C. or lower.
  • the pressing time is, for example, 1 minute or more, preferably 5 minutes or more, and for example, 60 minutes or less, preferably 20 minutes or less.
  • the first phosphor layer 2 contains a phenyl silicone resin composition having thermoplasticity and thermosetting property
  • the first phosphor layer 2 is plasticized by the above-described hot pressing. Subsequently, a plurality of optical semiconductor elements 1 are embedded with the plasticized first phosphor layer 2.
  • the first phosphor layer 2 is in direct contact with the upper surface of the temporary fixing layer 11 exposed from the plurality of optical semiconductor elements 1. That is, the first phosphor layer 2 is in direct contact with the upper surface and side surfaces of the optical semiconductor element 1 and the upper surface of the temporary fixing layer 11 exposed from the temporary fixing layer 11.
  • a plurality of optical semiconductor elements 1 are sealed by one first phosphor layer 2.
  • a first covering element assembly 41 including a plurality of optical semiconductor elements 1 and one first phosphor layer 2 is obtained in a state of being temporarily fixed to the first temporary fixing sheet 10.
  • the upper surface of the first phosphor layer 2 has a flat surface along the surface direction.
  • the lower surfaces of the plurality of optical semiconductor elements 1 are in direct contact (temporarily fixed) with the upper surface of the temporary fixing sheet 10.
  • the thickness L4 of the first phosphor layer 2 (upper first phosphor layer 52) located on the upper side of the optical semiconductor element 1 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 1000 ⁇ m or less, preferably Is 500 ⁇ m or less, more preferably 300 ⁇ m or less.
  • the thickness L5 of the first phosphor layer 2 positioned between the adjacent optical semiconductor elements 1 is, for example, 15 ⁇ m or more, preferably 50 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1500 ⁇ m or less.
  • Step (2) As shown in FIG. 1C, in the step (2), a groove 3 opened upward is provided in the first phosphor layer 2 located between the adjacent optical semiconductor elements 1.
  • the groove 3 has a substantially grid pattern (substantially a cross-beam shape) in plan view so as to partition each of the plurality of optical semiconductor elements 1.
  • the first phosphor layer 2 positioned between adjacent optical semiconductor elements 1 is half-cut by a cutting device such as a dicing saw 35. That is, the upper end portion and the middle portion in the vertical direction of the first phosphor layer 2 located at the center between the adjacent optical semiconductor elements 1 are cut. That is, the lower end portion of the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is left without being cut.
  • the cutting device enters the upper surface of the first phosphor layer 2 from the upper side of the first phosphor layer 2, and then, before the cutting device reaches the lower surface of the first phosphor layer 2, Terminate cutting (stop dimension).
  • the bottom portion 36 is provided in the first phosphor layer 2 by providing the groove 3.
  • the bottom portion 36 is an overhanging portion that protrudes outward in the surface direction from a portion covering the side surface of the optical semiconductor element 1 in the first phosphor layer 2.
  • the upper surface of the bottom portion 36 is positioned so as to be lowered one step downward from the portion covering the upper surface of the optical semiconductor element 1 in the first phosphor layer 2. Therefore, the upper surface of the bottom portion 36 and the upper surface of the above-described portion A step is formed between the two.
  • the width L6 of the groove 3 is set corresponding to the thickness of the dicing saw 35, specifically, for example, 10 ⁇ m or more, preferably 15 ⁇ m or more, and, for example, 1000 ⁇ m or less, preferably 500 ⁇ m. It is as follows.
  • the depth L7 of the groove 3 is, for example, 50 ⁇ m or more, preferably 75 ⁇ m or more, more preferably 100 ⁇ m or more, and for example, 2000 ⁇ m or less.
  • the thickness L8 of the bottom portion 36 (distance from the upper surface of the temporary fixing layer 11 to the upper surface of the bottom portion 36) is, for example, 5 ⁇ m or more, preferably 10 ⁇ m or more, more preferably 25 ⁇ m or more, and for example, 200 ⁇ m or less. Preferably, it is 75 ⁇ m or less. If the thickness L8 of the bottom portion 36 is equal to or greater than the above-described lower limit, the accuracy of the depth of penetration into the first phosphor layer 2 by the cutting device (specifically, the dicing saw 35 or the like) is, for example, at least about 10 ⁇ m. It is permissible to set a large value.
  • the thickness L8 of the bottom portion 36 is equal to or less than the above-described upper limit, light leakage to the side can be suppressed, and upward luminance (front luminance) can be improved.
  • the distance ⁇ between the inner side surface of the groove 3 and the side surface of the optical semiconductor element 1 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • Process (3) As shown in FIGS. 1D to 2H, in the step (3), the second coating layer 4 is filled into the grooves 3.
  • the method of filling the groove 3 with the second coating layer 4 includes, for example, the step (i) of arranging the protective sheet 6 on the upper surface of the first phosphor layer 2 (see FIG. 1D), the first temporary fixing sheet 10, and the light.
  • the step (ii) (see FIG. 1E) of placing the semiconductor element 1, the first phosphor layer 2 and the protective sheet 6 under vacuum, and the covering material 43 so as to surround the first covering element assembly 41
  • the process (iii) (refer FIG. 1E) which makes the 1st temporary fixing sheet 10 and the protection sheet 6 contact, and makes the sealing material 17 flow into the sealed space 17 (iv) (FIG. 2F) And a step (v) of peeling off the protective sheet 6 (see FIG. 2G). Step (i) to step (v) are sequentially performed.
  • step (i) As shown in FIGS. 1D and 3A, in step (i), the protective sheet 6 is disposed on the upper surface of the upper first phosphor layer 52. At that time, the protective sheet 6 closes the upper end of the groove 3, but the protective sheet 6 is arranged so that the groove 3 is not filled.
  • the protective sheet 6 has a substantially rectangular flat plate shape including the first covering element aggregate 41 when projected in the thickness direction.
  • the protective sheet 6 has a substantially rectangular flat plate shape included in the first temporary fixing sheet 10 when projected in the thickness direction. Specifically, the protective sheet 6 has a size larger than the first covering element assembly 41 and a size smaller than the first temporary fixing sheet 10.
  • the coating material 43 does not cover the upper surface of the upper first phosphor layer 52 and does not cover the upper surface of the upper first phosphor layer 52 in the step (iii) described later (see FIGS. 2F and 3C). It is a sheet for exposing.
  • the protective sheet 6 is a pressure-sensitive adhesive sheet that can be peeled off from the coated optical semiconductor element 5.
  • the protective sheet 6 includes a pressure-sensitive adhesive layer 61 and a support sheet 62 that supports the pressure-sensitive adhesive layer 61.
  • the pressure-sensitive adhesive layer 61 is formed in a substantially flat plate shape from, for example, a pressure-sensitive adhesive.
  • Examples of the pressure-sensitive adhesive include a pressure-sensitive adhesive whose pressure-sensitive adhesive force is reduced by treatment (specifically, irradiation with active energy rays).
  • Examples of such a pressure-sensitive adhesive include a resin composition into which a carbon-carbon double bond is introduced.
  • the resin composition include a polymer having a carbon-carbon double bond.
  • Such a polymer is prepared, for example, by the following method.
  • a precursor polymer having a first functional group is obtained by copolymerizing a monomer component containing a main vinyl monomer and a secondary vinyl monomer having a first functional group so that the first functional group does not disappear.
  • a compound having a second functional group capable of reacting with the first functional group and a carbon-double bond is prepared. Then, this compound is mix
  • Examples of the combination of the first functional group and the second functional group include a combination of a hydroxyl group and an isocyanate group.
  • the first functional group is preferably a hydroxyl group.
  • As the second functional group an isocyanate group is preferable.
  • Examples of the main monomer include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, and s-butyl (meth) ) Acrylate, pentyl (meth) acrylate, isopentyl (meth) acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, 2-ethylhexyl (meth) acrylate (2EHA / 2EHMA), octyl (meth) acrylate, isooctyl (meth) Acrylate, nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate, isodecyl (meth) acrylate,
  • alkyl (meth) acrylates in which the alkyl moiety has 1 to 20 carbon atoms.
  • 2-ethylhexyl acrylate (2EHA) is used.
  • EHA 2-ethylhexyl acrylate
  • the mixing ratio of the main monomer in the monomer component is, for example, 70% by mass or more, preferably 90% by mass or more, and for example, 99% by mass or less.
  • the secondary vinyl monomer is a vinyl monomer that can be copolymerized as the main vinyl monomer.
  • examples of the secondary vinyl monomer include a carboxy group-containing monomer, an epoxy group-containing monomer, a hydroxyl group-containing monomer, an isocyanate group-containing monomer, and preferably a hydroxyl group-containing monomer.
  • hydroxyl group-containing monomer examples include 2-hydroxyethyl (meth) acrylate (2-HEA / HEMA), 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, and 2-hydroxybutyl (meth).
  • hydroxyalkyl (meth) acrylates such as acrylate.
  • 2-hydroxyethyl acrylate (2-HEA) is used.
  • the mixing ratio of the secondary vinyl monomer in the monomer component is, for example, 30% by mass or less, and, for example, 1% by mass or more.
  • Examples of the compound include isocyanate group-containing compounds, and specific examples include isocyanate groups such as (meth) acryloyl isocyanate, 2- (meth) acryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate. And vinyl-containing monomers. Preferably, methacryloyloxyethyl isocyanate is used.
  • the compounding ratio of the compound is such that the introduction amount of the double bond in the polymer is, for example, 0.01 mmol / g or more, preferably 0.2 mmol / g or more, and, for example, 10.0 mmol / g or less, Preferably, it is adjusted to be 5.0 mmol / g or less.
  • the above-described monomer component is solution-polymerized in the above-described ratio in the presence of a polymerization initiator.
  • polymerization initiator examples include peroxides, persulfates, and redox initiators. These can be used alone or in combination.
  • a peroxide is mentioned.
  • the peroxide include diacyl peroxide, peroxyester, peroxydicarbonate, monoperoxycarbonate, peroxyketal, dialkyl peroxide, hydroperoxide, ketone peroxide, and preferably diacyl peroxide. Diperoxide is mentioned.
  • diacyl diperoxide examples include dibenzoyl peroxide (BPO), di-p-nitrobenzoyl peroxide, di-p-chlorobenzoyl peroxide, di (3,5,5-trimethylhexanoyl) peroxide, Examples thereof include di-n-octanoyl peroxide, didecanoyl peroxide, and dilauroyl peroxide.
  • BPO dibenzoyl peroxide
  • BPO dibenzoyl peroxide
  • the mixing ratio of the polymerization initiator is, for example, 0.005 parts by mass or more, for example, 1 part by mass or less with respect to 100 parts by mass of the monomer component.
  • a polymerization solvent is used.
  • the polymerization solvent include aromatic hydrocarbons such as toluene and xylene, and aliphatic hydrocarbons such as hexane.
  • aromatic hydrocarbon is used.
  • a monomer component containing a main vinyl monomer and a sub vinyl monomer is copolymerized so that the first functional group of the sub vinyl monomer does not disappear, thereby preparing a precursor polymer having the first functional group.
  • the above-described compound is added to the precursor polymer.
  • an isocyanate group-containing compound is blended with a precursor polymer containing a hydroxyl group, and the hydroxyl group and the isocyanate group are reacted to form a urethane bond. And the carbon-carbon double bond which a compound has is introduce
  • the photopolymerization initiator is a carbon-carbon introduced into the resin composition by generating radicals when the pressure sensitive adhesive layer 61 is irradiated with active energy rays in the step (v) (see FIG. 2G) described later. It is a photopolymerization catalyst for reacting double bonds with each other.
  • the 10-hour half-life temperature of the photopolymerization initiator is, for example, 20 ° C. or more, preferably 50 ° C. or more, and for example, 107 ° C. or less, preferably 100 ° C. or less.
  • the photopolymerization initiator examples include a ketal photopolymerization initiator, an acetophenone photopolymerization initiator, a benzoin ether photopolymerization initiator, an acylphosphine oxide photopolymerization initiator, an ⁇ -ketol photopolymerization initiator, an aromatic Group sulfonyl chloride photopolymerization initiator, photoactive oxime photopolymerization initiator, benzoin photopolymerization initiator, benzyl photopolymerization initiator, benzophenone photopolymerization initiator, thioxanthone photopolymerization initiator, and the like. These can be used alone or in combination.
  • a thioxanthone photopolymerization initiator is used.
  • the thioxanthone photopolymerization initiator include 1- [4- (2-hydroxyethoxy) -phenyl] -2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1- ⁇ 4 -[4- (2-Hydroxy-2-methyl-propionyl) -benzyl] phenyl ⁇ -2-methyl-propan-1-one.
  • Preferred examples include 2-hydroxy-1- ⁇ 4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl ⁇ -2-methyl-propan-1-one.
  • the blending ratio of the photopolymerization initiator is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, and for example, 10 parts by mass or less, preferably 100 parts by mass of the polymer. 5 parts by mass or less.
  • additives such as a crosslinking agent can be blended in the polymer at an appropriate ratio.
  • the crosslinking agent include isocyanate crosslinking agents, epoxy crosslinking agents, oxazoline crosslinking agents, aziridine crosslinking agents, melamine crosslinking agents, peroxide crosslinking agents, urea crosslinking agents, metal alkoxide crosslinking agents, Metal chelate type crosslinking agents, metal salt type crosslinking agents, carbodiimide type crosslinking agents, amine type crosslinking agents and the like can be mentioned.
  • an isocyanate type crosslinking agent is mentioned.
  • a pressure-sensitive adhesive is applied to the surface of the support sheet 62, and then dried.
  • the support sheet 62 examples include polymer films such as a polyethylene film and a polyester film (such as PET), such as a ceramic sheet, such as a metal foil.
  • the thickness of the support sheet 62 is, for example, 80 ⁇ m or more, preferably 110 ⁇ m or more, and for example, 300 ⁇ m or less, preferably 250 ⁇ m or less.
  • the drying temperature is, for example, 40 ° C. or more, preferably 60 ° C. or more, and for example, 150 ° C. or less, preferably 130 ° C. or less.
  • the drying temperature is, for example, 5 minutes or less.
  • the aging temperature is, for example, 25 ° C. or more, preferably 40 ° C. or more, and for example, 70 ° C. or less, preferably 60 ° C. or less.
  • the aging time is, for example, 10 hours or more, and for example, 120 hours or less.
  • the pressure-sensitive adhesive layer 61 is formed on the surface of the support sheet 62.
  • the thickness of the pressure-sensitive adhesive layer 61 is, for example, 10 ⁇ m or more, preferably 20 ⁇ m or more, and for example, 250 ⁇ m or less, preferably 100 ⁇ m or less.
  • the protective sheet 6 including the pressure-sensitive adhesive layer 61 and the support sheet 62 disposed on the upper surface of the pressure-sensitive adhesive layer 61 is obtained.
  • the protective sheet 6 has rigidity and toughness that do not substantially deform in the step (iii) shown in FIGS. 2F and 3C.
  • the tensile elastic modulus at 25 ° C. of the protective sheet 6 is, for example, 250 MPa or more, preferably 500 MPa or more, more preferably 1000 MPa or more, and for example, 20,000 MPa or less.
  • the protective sheet 6 is bonded to the first covering element assembly 41.
  • the pressure-sensitive adhesive layer 61 is bonded to the upper surface of the upper first phosphor layer 52.
  • the upper surface of the upper first phosphor layer 52 is pressure-sensitively bonded by the protective sheet 6 to be protected (covered).
  • the bottom surface of the groove 3 (the upper surface of the bottom portion 36) is spaced from the lower surface of the protective sheet 6 in the thickness direction.
  • a distance L7 between the bottom surface of the groove 3 and the lower surface of the protective sheet 6 is the same as the depth L7 of the groove 3.
  • Step (ii) As shown in FIG. 1E, in the step (ii), the first covering element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6 are arranged under vacuum.
  • the first covering element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6 are arranged in the vacuum device 16.
  • the vacuum device 16 includes a vacuum chamber 18, a vacuum line 19, a vacuum pump 20, a vacuum valve 21, an atmospheric line 22, an atmospheric valve 23, and a stage (not shown).
  • the vacuum chamber 18 is a sealed container that can accommodate the first covering element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6.
  • One end (the upstream end in the suction direction) of the vacuum line 19 is connected to the vacuum chamber 18, and the other end (the downstream end in the suction direction) of the vacuum line 19 is connected to the vacuum pump 20.
  • the vacuum pump 20 is configured to communicate with the space in the vacuum chamber 18 via the vacuum line 19.
  • the vacuum valve 21 is interposed in the middle of the vacuum line 19.
  • the atmospheric line 22 is a line that branches from the middle of the vacuum line 19, specifically, a portion between the vacuum chamber 18 and the vacuum valve 21 in the vacuum line 19, and is configured so that one end is opened to the atmosphere. Yes.
  • the atmospheric valve 23 is interposed in the middle of the atmospheric line 22.
  • a stage (not shown) is accommodated in the vacuum chamber 18 and has a substantially plate shape. Further, the stage has a fixing member such as an adsorption mechanism, and is configured to adsorb (fix) the lower surface of the first temporary fixing sheet 10.
  • a fixing member such as an adsorption mechanism
  • the first covering element assembly 41, the first temporary fixing sheet 10, and the protective sheet 6 are arranged in the vacuum chamber 18, and the pressure in the vacuum chamber 18 is set to a vacuum pressure.
  • the vacuum valve 21 and the atmospheric valve 23 are opened. Thereby, the vacuum pump 20 communicates with the atmospheric line 22. In this state, the vacuum pump 20 is operated. Thereafter, the first covering element assembly 41, the first temporarily fixing sheet 10 and the protective sheet 6 are installed in the vacuum chamber 18 so that the first temporarily fixing sheet 10 is fixed to a stage (not shown), Subsequently, the space (chamber space) 34 in the vacuum chamber 18 is sealed.
  • the atmospheric valve 23 is closed.
  • the vacuum pump 20 communicates with the chamber space 24 via the vacuum valve 21.
  • the atmospheric pressure in the chamber space 24 becomes a vacuum.
  • the atmospheric pressure (vacuum pressure) of the chamber space 24 is, for example, 1.0 ⁇ 10 ⁇ 2 MPa or less, preferably 1.0 ⁇ from the viewpoint of smoothly flowing the coating material 43 into the sealed space 17. 10 -3 and in MPa or less, and is, for example, from more effectively suppressing the generation of voids in the first phosphor layer 2 is 5.5 ⁇ 10 -4 MPa or more.
  • Step (iii) As shown in FIG. 2F and FIG. 3C, in step (iii), the covering material 43 is brought into contact with the first temporarily fixing sheet 10 and the protective sheet 6 so as to surround the first covering element assembly 41, A sealed space 17 is formed.
  • the coating material 43 is made of a coating composition having fluidity at normal temperature (25 ° C.).
  • the coating composition contains, for example, a light reflecting component and / or a light absorbing component and a resin.
  • the light reflective component examples include one kind of oxide selected from the group consisting of Ti, Zr, Nb, and Al, for example, particles such as AlN and / or MgF (light reflective particles).
  • the light reflective component is at least one selected from the group consisting of TiO 2 , ZrO 2 , Nb 2 O 5 , Al 2 O 3 , MgF, AlN, and SiO 2 . From the viewpoint of ensuring high light reflectivity, TiO 2 , ZrO 2 , Nb 2 O 5 , and Al 2 O 3 are preferable, and TiO 2 is more preferable.
  • the average particle diameter of the light reflecting particles is, for example, 0.1 ⁇ m or more, preferably 0.15 ⁇ m or more, and for example, 80 ⁇ m or less, preferably 50 ⁇ m or less.
  • the blending ratio of the light-reflecting component is, for example, 5% by mass or more, preferably 70% by mass or less with respect to the coating composition.
  • the blending ratio of the light-reflective component to 100 parts by mass of the resin is, for example, 3 parts by mass or more, preferably 5 parts by mass or more, and for example, 50 parts by mass or less, preferably 40 parts by mass or less. It is.
  • the light-absorbing component examples include pigments and dyes. From the viewpoint of light-absorbing property, light-absorbing particles such as carbon black are preferable.
  • the average particle size of the light-absorbing particles is, for example, 10 nm or more, preferably 15 nm or more, and for example, 100 nm or less, preferably 50 nm or less.
  • the blending ratio of the light absorbing component is, for example, 0.1% by mass or more, for example, 10% by mass or less with respect to the coating composition.
  • the blending ratio of the light absorbing component to 100 parts by mass of the resin is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, and for example, 30 parts by mass or less, preferably 25 parts by mass or less.
  • thermoplastic resins for example, curable resins such as thermosetting resins and active energy ray curable resins, preferably curable resins, and more preferably from the viewpoint of heat resistance. Therefore, preferably, a thermosetting resin is used.
  • thermosetting resin examples include a silicone resin, an epoxy resin, and an acrylic resin. From the viewpoint of light resistance, preferably, a silicone resin is used.
  • silicone resin examples include a methyl silicone resin composition disclosed in JP-A-2015-073084.
  • the blending ratio of the resin is, for example, 20% by mass or more, preferably 30% by mass or more, and, for example, 95% by mass or less, preferably 90% by mass or less with respect to the coating composition.
  • the coating composition can be blended with an inorganic filler such as silica or glass at an appropriate ratio.
  • the coating composition can also contain, for example, a metal material such as Ag or Cu, diamond, AlN, or the like at an appropriate ratio.
  • the coating composition does not contain a phosphor.
  • the above-described components are mixed and mixed in the above-described proportions.
  • the viscosity of the coating composition at normal temperature is, for example, 1 Pa ⁇ s or more, preferably 2 Pa ⁇ s or more, and for example, 50 Pa ⁇ s or less, preferably 40 Pa ⁇ s or less.
  • the viscosity of the coating composition is measured with an E-type viscometer.
  • the viscosity of the coating composition is equal to or higher than the lower limit described above, it is possible to suppress the precipitation of the light reflecting component and / or the light absorbing component. If the viscosity of the coating composition is equal to or less than the above upper limit, generation of voids in the first phosphor layer 2 can be suppressed.
  • a vacuum injection device (vacuum dispenser) 39 a vacuum printing machine
  • the coating material 43 is applied between the lower surface of the peripheral edge of the protective sheet 6 and the upper surface of the first temporary fixing sheet 10 facing it by an application device such as a drawing device.
  • the coating material 43 is applied using a vacuum dispenser 39.
  • the vacuum dispenser 39 includes a nozzle 40 that extends in the vertical direction and has a cross-sectional area that decreases in the downward direction, and a tank (not shown) connected to the nozzle 40.
  • the above-described coating apparatus is incorporated in the vacuum apparatus 16 in advance, and specifically, is installed in the vacuum chamber 18. Further, as shown in FIGS. 1D and 3B (hatched portion), the covering material 43 is formed in a substantially rectangular frame (frame) shape in plan view around the area where the first covering element assembly 41 is disposed. The coating material 43 is applied.
  • the frame (frame) shape of the covering material 43 is a continuous shape that is not interrupted along the circumferential direction of the protective sheet 6.
  • the covering material 43 has a cross-sectional shape that rises upward from the upper surface of the insulating plate 12.
  • the coating amount of the coating material 43 is set to be equal to or larger than the volume of the sealed space 17 described below. Specifically, for example, with respect to the volume of the sealed space 17 on a volume basis, for example, 100% or more, preferably 110% or more, more preferably 120% or more, and for example, 200% or less.
  • the space sealed by the coating material 43 forms a sealed space 17.
  • the sealed space 17 is a space including the groove 3, and is defined by the coating material 43, the protective sheet 6, the first temporary fixing sheet 10, and the first phosphor layer 2 (first covering element assembly 41). Space.
  • the pressure in the sealed space 17 is the same as the pressure in the chamber space 24 described above.
  • step (iv) In step (iv), as shown in FIG. 2F, the atmospheric pressure in the chamber space 24 (the chamber space 24 outside the sealed space 17) is set to atmospheric pressure.
  • the vacuum valve 21 is closed, and then the atmospheric valve 23 is opened.
  • the chamber space 24 is opened to the atmosphere via the atmosphere line 22. Then, since the atmosphere flows into the chamber space 24 through the atmosphere line 22 at a stretch, the pressure in the chamber space 24 becomes atmospheric pressure.
  • the air pressure in the sealed space 17 remains the vacuum pressure. Therefore, the pressure in the sealed space 17 is lower than the pressure in the chamber space 24. That is, a differential pressure is generated in the sealed space 17 and the chamber space 24.
  • the differential pressure is a pressure difference obtained by subtracting the air pressure in the sealed space 17 from the air pressure in the chamber space 24 ([atmospheric pressure in the chamber space 24] ⁇ [atmospheric pressure in the sealed space 17]), and specifically, for example, 0.095 MPa.
  • it is 0.096 MPa or more, More preferably, it is 0.097 MPa or more, for example, it is 0.1 MPa or less.
  • the coating material 43 flows into the sealed space 17 and the sealed space 17 is filled with the coating material 43 as shown in FIG. 2F.
  • the coating material 43 is filled in the groove 3 so that the upper surface of the upper first phosphor layer 52 is exposed.
  • the second covering layer 4 having the same shape as the sealed space 17 and made of the covering material 43 is formed. That is, the groove 3 is filled with the second coating layer 4.
  • the thickness L7 of the second coating layer 4 filled in the groove 3 is the same as the depth L7 of the groove 3.
  • the second covering element assembly 29 is an industrially available device, and preferably includes only a plurality of optical semiconductor elements 1, one first phosphor layer 2, and one second covering layer 4. .
  • Step (v) In the step (v), as shown in FIG. 2G, when the second coating layer 4 contains a curable resin, the curable resin is cured. Specifically, if the curable resin is a thermosetting resin, the second coating layer 4 is heated.
  • the protective sheet 6 is peeled off from the second covering element assembly 29.
  • the active energy ray described above is irradiated onto the protective sheet 6 to reduce the pressure-sensitive adhesive force of the protective sheet 6. Subsequently, the protective sheet 6 is peeled off from the upper surface of the upper first phosphor layer 52 and the upper surface of the second coating layer 4.
  • the upper surface of the upper first phosphor layer 52 and the upper surface of the second coating layer 4 become exposed surfaces exposed upward.
  • the upper surface of the second coating layer 4 is formed flush with the upper surface of the upper first phosphor layer 52.
  • the second covering layer 4 of the second covering element assembly 29 and the corresponding first phosphor layer 2 are cut to separate the optical semiconductor element 1 into pieces. Specifically, the second coating layer 4 and the first phosphor layer 2 (bottom portion 36) corresponding to the groove 3 are cut along the thickness direction by a cutting device such as a dicing saw.
  • the coated optical semiconductor element 5 including one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4 is supported by the first temporary fixing sheet 10. ,can get.
  • the coated optical semiconductor element 5 is an industrially available device, and preferably includes only one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4.
  • the coated optical semiconductor element 5 covers the optical semiconductor element 1, the first phosphor layer 2 that covers the top and side surfaces of the optical semiconductor element 1 and has a bottom 36, and the side of the first phosphor layer 2. And a second covering layer 4 that covers the side surface of the first phosphor layer 2 and the top surface of the bottom portion 36.
  • the width ⁇ of the second coating layer 4 is the same as the length ⁇ of the bottom 36.
  • the width ⁇ of the second coating layer 4 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • Step (4) As shown in FIG. 2I, in the step (4), the coated optical semiconductor element 5 is transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.
  • the first transfer sheet 27 is disposed above the plurality of coated optical semiconductor elements 5. Thereafter, the first transfer sheet 27 is pulled down, and the lower surface of the first transfer sheet 27 comes into contact with the upper surfaces of the plurality of coated optical semiconductor elements 5 (the upper surface of the upper first phosphor layer 52 and the upper surface of the second coating layer 4).
  • Examples of the first transfer sheet 27 include known transfer sheets, such as SPV series (manufactured by Nitto Denko Corporation).
  • the adhesive force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is, for example, higher than the adhesive force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10.
  • the adhesive force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is higher than the adhesive force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10, in step (4), The coated optical semiconductor element 5 can be reliably transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.
  • the adhesive force F2 of the plurality of coated optical semiconductor elements 5 to the transfer sheet 27 is, for example, more than 100%, preferably 110% or more, with respect to the adhesive force F1 of the plurality of coated optical semiconductor elements 5 to the temporary fixing sheet 10. More preferably, it is 120% or more, for example, 300% or less.
  • the adhesive force F2 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 27 is, for example, 0.2 N / 20 mm or more, preferably 0.3 N / 20 mm or more, more preferably 0.4 N. / 20 mm or more, and for example, 3.0 N / 20 mm or less.
  • a method for measuring the adhesive force F2 will be described in a later example.
  • the adhesive force F1 of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10 is the adhesive force of the plurality of coated optical semiconductor elements 5 to the first temporary fixing sheet 10 after processing (irradiation with active energy rays).
  • F1 specifically, for example, 0.4 N / 20 mm or less, preferably 0.2 N / 20 mm or less, more preferably 0.15 N / 20 mm or less, and for example, 0.01 N / It is 20 mm or more.
  • the measuring method of the adhesive force F1 with respect to the 1st temporary fixing sheet 10 after a process of the some covering optical semiconductor element 5 is demonstrated by a subsequent Example.
  • the first transfer sheet 27 is pulled up with respect to the first temporarily fixed sheet 10.
  • the lower surface of the coated optical semiconductor element 5 is peeled off from the upper surface of the first temporary fixing sheet 10.
  • the lower surface of the optical semiconductor element 1 and the lower surface of the bottom portion 36 of the first phosphor layer 2 are peeled off from the upper surface of the temporary fixing layer 11.
  • the coated optical semiconductor element 5 including the optical semiconductor element 1, the first phosphor layer 2, and the second coating layer 4 is transferred to the first transfer sheet 27.
  • the coated optical semiconductor element 5 is then mounted on the substrate 50.
  • the coated optical semiconductor element 5 is flip-chip mounted on the substrate 50. That is, the bumps (not shown) of the optical semiconductor element 1 of the coated optical semiconductor element 5 are electrically connected to the terminals (not shown) of the substrate 50.
  • the light emitting device 51 includes a substrate 50, the optical semiconductor element 1 mounted on the substrate 50, a first phosphor layer 2 that covers a side surface of the optical semiconductor element 1 and has a bottom 36, and a first phosphor. And a second covering layer 4 covering the side surface of the layer 2 and the upper surface of the bottom portion 36. The bottom surface of the bottom portion 36 is in contact with the top surface of the substrate 50.
  • the optical semiconductor element 1 emits light by electricity supplied from the substrate 50.
  • a part of the light emitted from the optical semiconductor element 1 is wavelength-converted by the first phosphor layer 2.
  • the light traveling upward is irradiated on the upper side as it is.
  • the light emitted from the optical semiconductor element 1 toward the side includes light that has been sufficiently wavelength-converted by the bottom portion 36 and light that has been wavelength-converted by the upper portion of the bottom portion 36 in the first phosphor layer 2. , Moderately mixed.
  • step (3) the second coating layer 4 in which the bottom 36 of the first phosphor layer 2 is filled in the groove 3 is used. And the first temporary fixing sheet 10, the second covering layer 4 is prevented from coming into direct contact with the first temporary fixing sheet 10. Therefore, even if the pressure-sensitive adhesive force of the second coating layer 4 is high, the second coating layer 4 can be prevented from adhering to the first temporary fixing sheet 10.
  • the coated optical semiconductor element 5 can be reliably peeled from the first temporary fixing sheet 10 in the step (4).
  • the process (4 ) If the adhesive force F2 of the coated optical semiconductor element 5 to the first temporarily fixing sheet 10 is lower than the adhesive force F1 of the coated optical semiconductor element 5 to the first temporarily fixed sheet 10 after processing, the process (4 ), The coated optical semiconductor element 5 is not transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 but is pressure-bonded to the first temporary fixing sheet 10. If the adhesive force F2 of the coated optical semiconductor element 5 to the first temporary fixing sheet 10 is the same as the adhesive force F1 of the coated optical semiconductor element 5 to the first temporarily fixed sheet 10 after processing, in step (4), The coated optical semiconductor element 5 is not reliably transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.
  • the adhesive force F2 of the coated optical semiconductor element 5 to the first temporary fixing sheet 10 is larger than the adhesive force F1 of the coated optical semiconductor element 5 to the first temporarily fixed sheet 10 after processing. Since it is high, as shown in FIG. 2I, the coated optical semiconductor element 5 can be more reliably transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 in the step (4).
  • the wavelength of the light emitted from the optical semiconductor element 1 can be converted.
  • step (3) the groove 3 is filled with the second coating layer 4 so that the upper surface of the first phosphor layer 2 is exposed.
  • the coated optical semiconductor element 5 that emits the light it has can be obtained. Further, it is possible to obtain the light emitting device 51 that emits light having upward directivity.
  • the step (3) is performed by the method using the differential pressure (step (ii) to step (iv)).
  • step (ii) the differential pressure
  • step (iv) the differential pressure
  • the second coating layer 4 can be formed in the groove 3 while the upper surface of the upper first phosphor layer 52 is covered with the protective sheet 6 without using the differential pressure.
  • the covering material 43 is poured into a mold having a protective sheet 6 on the surface, and then the first covering element assembly 41 shown in FIG.
  • the second coating layer 4 is molded so that the phosphor layer 52 is in contact with the protective sheet 6.
  • the second coating layer 4 is an optical functional layer containing a light reflecting component and / or a light absorbing component.
  • the second coating layer 4 of this modification may be a transparent layer made of only a resin and does not contain any light-reflecting component or light-absorbing component.
  • step (3) the groove 3 is filled with the second coating layer 4 so that the upper surface of the upper first phosphor layer 52 is exposed.
  • the groove 3 is filled with the second coating layer 4 so as to cover the upper surface of the upper first phosphor layer 52, as shown in FIG. 5C.
  • a plurality of optical semiconductor elements 1 temporarily fixed to the upper surface of the first temporary fixing sheet 10 with a space therebetween are formed by the first phosphor layer 2.
  • Step (2) for coating so that the first phosphor layer 2 is in direct contact with the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1, and adjacent optical semiconductor elements
  • Step (3) for providing a groove 3 opened upward in the first phosphor layer 2 located between 1 and the second covering layer 4 is filled in the groove 3
  • Step (3) see FIGS.
  • step (3) first, the second coating layer 4 formed in a substantially flat plate shape is prepared from the coating material 43 described above.
  • the thickness L9 of the second coating layer 4 is, for example, 50 ⁇ m or more, preferably 75 ⁇ m or more, more preferably 100 ⁇ m or more, and for example, 2500 ⁇ m or less.
  • the second coating layer 4 is subjected to, for example, pressure bonding, preferably thermocompression bonding (hot pressing), with respect to the first covering element assembly 41 and the first temporary fixing sheet 10.
  • pressure bonding preferably thermocompression bonding (hot pressing)
  • the conditions for pressure bonding are appropriately adjusted depending on the type of resin contained in the coating material.
  • the second coating layer 4 covers the upper first phosphor layer 52 while filling the groove 3.
  • the second coating layer 4 is also disposed above the groove 3.
  • a second covering element assembly 29 including a plurality of optical semiconductor elements 1, one first phosphor layer 2, and one second covering layer 4 is obtained.
  • the second covering layer 4 in the second covering element assembly 29 has a shape extending along the surface direction. Specifically, the upper surface of the second coating layer 4 has a flat surface extending along the surface direction. On the other hand, the lower surface of the second cover layer 4 corresponds to the groove 3 and protrudes downward 45, covers the upper surface of the upper first phosphor layer 52, and is recessed 46 opened downward. Is integrated.
  • step (3) thereafter, as shown in FIG. 6D, the first phosphor layer 2 and the second coating layer 4 corresponding to the grooves 3 are cut. Specifically, the bottom portion 36 and the protruding portion 45 of the second coating layer 4 are cut by a cutting device such as a dicing saw.
  • the coated optical semiconductor element 5 including one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4 is supported by the first temporary fixing sheet 10. ,can get.
  • the thickness z of the second coating layer 4 positioned above the upper first phosphor layer 52 is set to be relatively thin as shown in FIG.
  • it is 1000 ⁇ m or less, preferably 500 ⁇ m or less, more preferably 300 ⁇ m or less, and for example, 1 ⁇ m or more, preferably 10 ⁇ m or more.
  • the upper surface of the upper first phosphor layer 52, the side surface of the first phosphor layer 2, and the upper surface of the bottom portion 36 are covered with the second coating layer 4.
  • the coated optical semiconductor element 5 is transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 in the step (5), and then onto the substrate 50 as shown in FIG. Flip chip mounting. Thereby, the light emitting device 51 is obtained.
  • step (3) the second coating layer 4 is filled in the groove 3 so as to cover the upper surface of the upper first phosphor layer 52.
  • a part of the light emitted upward from the optical semiconductor element 1 is wavelength-converted by the upper first phosphor layer 52 and then passes through the second coating layer 4 so that the light is mixed appropriately. The Therefore, it is possible to obtain the coated optical semiconductor element 5 having excellent optical characteristics and the light emitting device 51 having excellent optical characteristics.
  • the thickness z of the second coating layer 4 positioned on the upper side of the upper first phosphor layer 52 is set to be relatively thin.
  • the upper first phosphor layer is, for example, The thickness z of the second coating layer 4 located on the upper side of 52 is set to be relatively thick.
  • the thickness z of the second coating layer 4 positioned on the upper side of the upper first phosphor layer 52 is, for example, 5 ⁇ m or more, preferably 50 ⁇ m or more, more preferably 100 ⁇ m or more. 500 ⁇ m or less.
  • the coated optical semiconductor element 5 and the light emitting device 51 may emit uniform light. it can.
  • the phosphor is not contained in the second coating layer 4.
  • the phosphor is contained in the second phosphor layer 84 as an example of the second coating layer. That is, both the first phosphor layer 2 and the second phosphor layer 84 contain a phosphor.
  • the first phosphor layer 2 contains a red phosphor
  • the second phosphor layer 84 contains a green phosphor.
  • the second phosphor layer 84 of the third embodiment and the fourth embodiment has the same shape and structure as the second coating layer 4 of the first embodiment and the second embodiment.
  • the 2nd fluorescent substance layer 84 contains resin and fluorescent substance which are contained in an above-described coating composition.
  • the content ratio of the phosphor is, for example, 0.1 parts by mass or more, preferably 0.5 parts by mass or more, for example, 80 parts by mass or less, preferably 50 parts by mass with respect to 100 parts by mass of the resin. Or less. Further, the content ratio of the phosphor is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, for example, 90% by mass or less, based on the total mass of the resin and the phosphor. Preferably, it is 80 mass% or less.
  • the body is, for example, 0.1 or more, preferably 0.5 or more, and is, for example, 10 or less, preferably 2 or less, based on mass.
  • the coated optical semiconductor element 5 obtained by the manufacturing method of the third embodiment covers the optical semiconductor element 1, the upper surface and the side surface of the optical semiconductor element 1, and the first phosphor having the bottom 36.
  • the layer 2 includes a second phosphor layer 84 that covers the side surface of the first phosphor layer 2 and the top surface of the bottom portion 36.
  • the width ⁇ of the second phosphor layer 84 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the thickness L7 of the second phosphor layer 84 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the coated optical semiconductor element 5 obtained by the manufacturing method of the fourth embodiment covers the optical semiconductor element 1, the upper surface and the side surface of the optical semiconductor element 1, and has a bottom portion 36.
  • the phosphor layer 2, and the second phosphor layer 84 covering the upper surface (including the upper surface of the bottom 36) and the side surface of the first phosphor layer 2 are provided.
  • the upper surface of the second phosphor layer 84 is a flat surface extending in the surface direction.
  • the lower surface of the second phosphor layer 84 has a protrusion 45 and a recess 46.
  • the width ⁇ of the second phosphor layer 84 is the same as that in the third embodiment.
  • the thickness z of the second phosphor layer 84 positioned on the upper side of the upper first phosphor layer 52 is set to be relatively thick, for example, specifically, for example, 10 ⁇ m or more, preferably 25 ⁇ m or more, more preferably , 50 ⁇ m or more, and for example, 2000 ⁇ m or less.
  • the light emitted upward from the optical semiconductor element 1 is wavelength-converted by the upper first phosphor layer 52.
  • the The light emitted from the optical semiconductor element 1 toward the side is sequentially wavelength-converted by the first phosphor layer 2 and the second phosphor layer 84. Therefore, it is possible to obtain the coated optical semiconductor element 5 having excellent light emission efficiency, and thus the light emitting device 51 having excellent light emission efficiency.
  • the coated optical semiconductor element 5 obtained according to the fourth embodiment As shown in FIG. 9, according to the coated optical semiconductor element 5 obtained according to the fourth embodiment, the light emitted upward and laterally from the optical semiconductor element 1 is emitted from the first phosphor layer 2 and the first phosphor layer 2. The wavelength is sequentially converted by the two phosphor layers 84. Therefore, it is possible to obtain the coated optical semiconductor element 5 excellent in light uniformity and light emission efficiency, and thus the light emitting device 51 excellent in light emission efficiency.
  • the phosphor is contained in the first phosphor layer 2 as an example of the first coating layer.
  • the phosphor is not included in the first coating layer 82. That is, the first coating layer 82 is a transparent layer that does not contain a phosphor.
  • the second phosphor layer 84 is a phosphor layer containing a phosphor.
  • the second phosphor layer 84 contains a yellow phosphor.
  • the first covering layer 82 of the fifth embodiment and the sixth embodiment has the same shape and structure as the first phosphor layer 2 of the first embodiment and the second embodiment.
  • the 1st coating layer 82 consists of an above-described transparent resin composition (resin composition which does not contain fluorescent substance). Therefore, the 1st coating layer 82 is a transparent layer which has transparency.
  • step (2) in the step (2), a first covering element assembly including a plurality of optical semiconductor elements 1 and a first covering layer 82 covering them and having grooves 3 is provided.
  • a body 41 (not shown in FIGS. 1B and 1C) is obtained with the first temporary fixing sheet 10 supported.
  • the second phosphor layer 84 has the same shape and structure as the second coating layer 4 of the first embodiment and the second embodiment.
  • the 2nd fluorescent substance layer 84 consists of a composition for forming the 2nd fluorescent substance layer 84 same as 3rd Embodiment and 4th Embodiment, ie, contains resin and fluorescent substance.
  • the coated optical semiconductor element 5 obtained by the manufacturing method of the fifth embodiment includes the optical semiconductor element 1 and a first coating layer that covers the upper surface and the side surface of the optical semiconductor element 1 and has a bottom portion 36. 82, a side surface of the first coating layer 82 located on the side of the first coating layer 82, and a second phosphor layer 84 that covers the upper surface of the bottom portion 36.
  • the first covering layer 82 of the coated optical semiconductor element 5 has a portion (upper first covering layer 83, corresponding to the upper first phosphor layer 52 in the first embodiment) located above the optical semiconductor element 1. The upper surface of the upper first covering layer 83 is exposed.
  • the distance ⁇ between the inner surface of the groove 3 and the side surface of the optical semiconductor element 1 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less. It is.
  • the thickness L7 of the second phosphor layer 84 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the coated optical semiconductor element 5 obtained by the manufacturing method of the sixth embodiment covers the optical semiconductor element 1, the upper surface and the side surface of the optical semiconductor element 1, and has a bottom portion 36.
  • a covering layer 82 and a second phosphor layer 84 that covers the upper first covering layer 83 are provided.
  • the width ⁇ of the second phosphor layer 84 is the same as that in the fifth embodiment.
  • the thickness z of the second phosphor layer 84 located on the upper side of the upper first coating layer 83 is set to be relatively thick, for example, specifically, for example, 20 ⁇ m or more, preferably 50 ⁇ m or more, more preferably 100 ⁇ m or more, and for example, 2000 ⁇ m or less.
  • the light emitted from the optical semiconductor element 1 passes through the first coating layer 82.
  • the light transmitted through the first cover layer 82 to the side is converted in wavelength by the second phosphor layer 84 and then directed obliquely upward. Therefore, the light extraction efficiency can be improved.
  • the coated optical semiconductor element 5 obtained by the sixth embodiment the light emitted from the optical semiconductor element 1 passes through the first coating layer 82.
  • the light transmitted through the first cover layer 82 to the side is converted in wavelength by the second phosphor layer 84 and then directed obliquely upward.
  • a part of the light transmitted upward through the upper first covering layer 83 is wavelength-converted by the second phosphor layer 84 and then travels upward. Therefore, this coated optical semiconductor element 5 is excellent in luminous efficiency.
  • the first temporarily fixed sheet 10 is cited as an example of the temporarily fixed sheet.
  • the first transfer sheet 37 is given as an example of the temporarily fixed sheet.
  • the lower surfaces of the plurality of optical semiconductor elements 1 are temporarily fixed directly to the temporary fixing sheet 10 in the step (1).
  • each of the plurality of optical semiconductor elements 1 is indirectly attached to the temporary fixing sheet 10 via the first phosphor layer 2. Temporarily fix.
  • a step of preparing a first coated element assembly 41 (see FIGS. 15A and 15B), the first coated element assembly 41 is an example of a temporary fixing sheet.
  • (1) see FIG. 15C
  • transfer step (2) see FIG. 15D
  • filling the second cover layer 4 into the groove 3 (3) see FIG. 15C) 16E
  • the step (4) of transferring the coated optical semiconductor element 5 from the first transfer sheet 37 to the second transfer sheet 38 as an example of the transfer sheet see FIG. 16F
  • the process of removing (refer FIG. 16G) is provided.
  • the above steps are sequentially performed.
  • the first covering element assembly 41 is transferred to the first transfer sheet 37.
  • the first transfer sheet 37 is disposed above the first covering element assembly 41, as shown in FIG. 15B.
  • the first transfer sheet 37 is also a temporarily fixing sheet that can temporarily fix the first covering element assembly 41 including the optical semiconductor elements 1 that are arranged at intervals.
  • a transfer sheet similar to the transfer sheet 27 described above can be used as the first transfer sheet 37.
  • the first transfer sheet 37 is pulled down, and the lower surface of the first transfer sheet 37 is brought into contact with the upper surface of the first covering element assembly 41.
  • the first transfer sheet 37 is pulled up with respect to the first temporarily fixed sheet 10.
  • the lower surface of the first covering element assembly 41 is peeled off from the upper surface of the first temporary fixing sheet 10.
  • the first covering element assembly 41 including the plurality of optical semiconductor elements 1 and the first phosphor layer 2 covering them is temporarily fixed to the first transfer sheet 37.
  • the first covering element assembly 41 and the first transfer sheet 37 are turned upside down.
  • the upper surface of the first covering element assembly 41 is exposed while the lower surface of the first covering element assembly 41 supports the first transfer sheet 37.
  • the lower surfaces of the plurality of optical semiconductor elements 1 are supported (temporarily fixed) on the first transfer sheet 37 above the first transfer sheet 37 via the first phosphor layer 2. ing.
  • the upper surface of the optical semiconductor element 1 is exposed.
  • the upper surface of the optical semiconductor element 1 is formed by the bumps described above.
  • the first phosphor layer 2 is interposed between the plurality of optical semiconductor elements 1 and the first transfer sheet 37.
  • the groove 3 opened upward in the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 is formed. Is provided.
  • the groove 3 is opened in the same direction as the bump (upper surface) of the optical semiconductor element 1, specifically, upward.
  • the depth L7 of the groove 3 is set larger than the thickness L1 of the optical semiconductor element 1, for example.
  • the depth L7 of the groove 3 is, for example, 50 ⁇ m or more, preferably 100 ⁇ m or more, and for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the second coating layer 4 is then filled into the grooves 3 so as to cover the upper surface (bump) of the optical semiconductor element 1.
  • the first phosphor layer 2 and the second coating layer 4 corresponding to the grooves 3 are cut.
  • the coated optical semiconductor element 5 including one optical semiconductor element 1, one first phosphor layer 2, and one second coating layer 4 is supported (temporarily fixed) on the first transfer sheet 37. It is obtained in the state.
  • the thickness h1 of the second coating layer 4 positioned on the upper side of the optical semiconductor element 1 is, for example, 500 ⁇ m or less, preferably 300 ⁇ m or less, and for example, 1 ⁇ m or more, preferably 10 ⁇ m. That's it.
  • the second coating layer 4 that covers the upper surfaces of the plurality of optical semiconductor elements 1 is removed.
  • the upper end portion of the second coating layer 4 located above the bottom portion 36 is also removed.
  • the pressure-sensitive adhesive sheet is prepared from a pressure-sensitive adhesive, and has a sheet shape continuous in the front-rear direction and the left-right direction.
  • size of a pressure sensitive adhesive sheet is set to the magnitude
  • Examples of pressure sensitive adhesives include acrylic pressure sensitive adhesives, rubber pressure sensitive adhesives, silicone pressure sensitive adhesives, urethane pressure sensitive adhesives, polyacrylamide pressure sensitive adhesives, and the like.
  • the pressure sensitive adhesive sheet may be supported by a support material or the like.
  • the pressure-sensitive adhesive sheet has an adhesive strength at 25 ° C. (180 ° C.
  • peel adhesive strength of, for example, 7.5 (N / 20 mm) or more, preferably 10.0 (N / 20 mm) or more. 100 (N / 20 mm) or less, preferably 20.0 (N / 20 mm) or less.
  • the pressure-sensitive adhesive surface of the pressure-sensitive adhesive sheet (the side opposite to the surface supported by the support material when the pressure-sensitive adhesive sheet supports the support material) Pressure-sensitive adhesion is performed on the upper surface of the coating layer 4, and then the upper end portion of the second coating layer 4 is peeled off. Specifically, first, the pressure-sensitive adhesive sheet is lowered, and then the pressure-sensitive adhesive sheet is pressure-sensitively bonded to the upper end portion of the second coating layer 4, and then the pressure-sensitive adhesive sheet is bonded to the second coating layer. Together with the upper end of 4, it is raised (pulled up).
  • the second coating layer 4 positioned on the upper side of the optical semiconductor element 1 is peeled off at the interface with the upper surface (bump) of the optical semiconductor element 1 and follows the pressure-sensitive adhesive sheet.
  • movement is repeated in multiple times, and thereby the peeling of the upper end part of the 2nd coating layer 4 is completed.
  • the upper end portion of the second coating layer 4 positioned above the bottom portion 36 follows the pressure-sensitive adhesive sheet together with the second coating layer 4 positioned above the optical semiconductor element 1. .
  • a solvent capable of completely or partially dissolving or dispersing the coating resin composition is selected.
  • the solvent include organic solvents and aqueous solvents.
  • the organic solvent include alcohols such as methanol and ethanol, ketones such as acetone and methyl ethyl ketone, aliphatic hydrocarbons such as hexane, aromatic hydrocarbons such as toluene, and ethers such as tetrahydrofuran. Is mentioned.
  • alcohol and aromatic hydrocarbon are used.
  • the above solvent is absorbed into a cloth, and the upper surface of the second coating layer 4 is wiped with the cloth. Thereby, the upper end part of the 2nd coating layer 4 is removed.
  • polishing member examples include cloths such as buffs, brushes, and water blasting.
  • the upper surface of the second coating layer 4 is polished with a polishing member. Thereby, the upper end part of the 2nd coating layer 4 is removed.
  • the upper surface of the optical semiconductor element 1, the upper surface of the first phosphor layer 2, and the upper surface of the second coating layer 4 are flush with each other. That is, the upper surface of the optical semiconductor element 1 forms the same plane as the upper surface of the first phosphor layer 2 and the upper surface of the second coating layer 4.
  • the thickness h2 of the second coating layer 4 is, for example, 15 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the coated optical semiconductor element 5 is transferred to the second transfer sheet 38 so that the phantom line in FIG. 16G is referred to, the coated optical semiconductor element 5 is picked up by a collet as shown in FIG. (Not shown) and the like are flip-chip mounted on the substrate 50. Thereby, the light emitting device 51 is obtained.
  • the adhesive force F4 of the plurality of coated optical semiconductor elements 5 to the second transfer sheet 38 is, for example, higher than the adhesive force F3 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 37.
  • the adhesive force F4 of the plurality of coated optical semiconductor elements 5 to the second transfer sheet 38 is higher than the adhesive force F3 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 37, in step (4), the coating force The optical semiconductor element 5 can be reliably transferred from the first transfer sheet 37 to the second transfer sheet 38.
  • the adhesive force F4 of the plurality of coated optical semiconductor elements 5 to the second transfer sheet 38 is, for example, more than 100%, preferably 110% of the adhesive force F3 of the plurality of coated optical semiconductor elements 5 to the first transfer sheet 37. % Or more, more preferably 120% or more, and for example, 300% or less.
  • the bottom 36 of the first phosphor layer 2 has the second covering layer 4 filled in the groove 3, and the first transfer sheet 37. Therefore, the second coating layer 4 is prevented from coming into direct contact with the first transfer sheet 37. Therefore, even if the pressure-sensitive adhesive force of the second coating layer 4 is high, the second coating layer 4 can be prevented from adhering to the first transfer sheet 37.
  • the coated optical semiconductor element 5 can be reliably peeled from the first transfer sheet 37 in the step (4).
  • step (4) If the adhesive force F4 of the coated optical semiconductor element 5 to the second transfer sheet 38 is lower than the adhesive force F3 of the coated optical semiconductor element 5 to the first transfer sheet 37 after processing, in step (4).
  • the coated optical semiconductor element 5 is not transferred from the first transfer sheet 37 to the second transfer sheet 38 and is pressure-bonded to the first transfer sheet 37. If the adhesive force F4 of the coated optical semiconductor element 5 to the second transfer sheet 38 is the same as the adhesive force F3 of the coated optical semiconductor element 5 to the processed first transfer sheet 37, in step (4), the coating light
  • the semiconductor element 5 is not reliably transferred from the first transfer sheet 37 to the second transfer sheet 38.
  • the adhesive force F4 of the coated optical semiconductor element 5 to the second transfer sheet 38 is higher than the adhesive force F3 of the coated optical semiconductor element 5 to the first transfer sheet 37 after processing.
  • the coated optical semiconductor element 5 can be more reliably transferred from the first transfer sheet 37 to the second transfer sheet 38.
  • the first phosphor layer 2 has the bottom portion 36, so that light emitted from the optical semiconductor element 1 and directed obliquely upward to the side is transmitted by the bottom portion 36.
  • the wavelength can be converted efficiently. Therefore, it is possible to obtain the coated optical semiconductor element 5 having excellent light extraction efficiency and the light emitting device 51 having excellent light extraction efficiency.
  • the first phosphor layer 2 is provided with a bottom portion 36 that is an overhang portion.
  • the first phosphor layer 2 does not include the bottom portion 36 that is an overhang portion.
  • the bottom portion 36 of the first phosphor layer 2 is used. The process of removing the upper end part containing is provided.
  • the step of removing the upper end portion of the first phosphor layer 2 is performed after the step (4) of transferring the coated optical semiconductor element 5 to the second transfer sheet 38 shown in FIG. 18A.
  • the upper end part of the 2nd coating layer 4 is exposed to the upper side.
  • the upper surface of the second coating layer 4 and the upper surface of the first phosphor layer 2 are flush with each other. That is, the upper surface of the second coating layer 4 and the upper surface of the first phosphor layer 2 form the same plane.
  • the first phosphor layer 2 has a substantially bottomed box shape, and has a shape in which the optical semiconductor element 1 is embedded at the lower end thereof. In other words, the optical semiconductor element 1 is covered at the lower portion and has a shape having a recess that opens downward.
  • the first phosphor layer 2 has an upper surface (upper end surface) exposed on the upper side, a lower surface pressure-bonded to the second transfer sheet 38, and an outer surface that is coated on the inner surface of the second coating layer 4. It has a side surface and an inner surface that covers the upper surface and the side surface of the optical semiconductor element 1.
  • the second coating layer 4 is disposed on the outer side in the surface direction of the first phosphor layer 2 and has a substantially rectangular frame shape.
  • the second covering layer 4 has an upper surface that is flush with the upper surface of the first phosphor layer 2, a lower surface that is flush with the lower surfaces of the first phosphor layer 2 and the optical semiconductor element 1, and outward in the plane direction. It has an exposed outer surface and an inner surface that covers the outer surface of the first phosphor layer 2.
  • the thickness L4 of the upper first phosphor layer 52 is, for example, 10 ⁇ m or more, preferably 50 ⁇ m or more, and, for example, 2000 ⁇ m or less, preferably 1000 ⁇ m or less.
  • the coated optical semiconductor element 5 is flip-chip mounted on the substrate 50 using a pickup device (not shown) provided with a collet. Thereby, the light emitting device 51 is obtained.
  • the coated optical semiconductor element 5 and the light emitting device 51 since the first phosphor layer 2 does not include the bottom portion 36 (see FIG. 17), leakage of light to the side is suppressed, and upward luminance ( Front luminance) can be improved.
  • blending ratio content ratio
  • physical property values and parameters used in the following description are described in the above-mentioned “Mode for Carrying Out the Invention”, and the corresponding blending ratio (content ratio) ), Physical property values, parameters, etc. may be replaced with the upper limit values (numerical values defined as “less than” or “less than”) or lower limit values (numbers defined as “greater than” or “exceeded”). it can.
  • Phenyl silicone resin composition Phenyl silicone resin composition A described in Examples of JP-A-2015-073084 Methyl silicone resin composition: trade name “LS1-6140”, manufactured by Nusil Titanium oxide: light reflecting component, trade name “R-706”, average particle size 0.38 ⁇ m, manufactured by Dupont silica filler: inorganic filler, Product name “FB9454”, average particle size 20 ⁇ m, Denka's carbon black: light absorbing particles, product name “MA600”, average particle size 20 nm, Mitsubishi Chemical Corporation yellow phosphor: YAG phosphor, product name “Y468” , YAG: Ce, average particle size 17 ⁇ m, manufactured by Nemoto Lumimaterial, Inc.
  • the first temporary fixing sheet 10 includes a temporary fixing layer 11 made of a double-sided tape and a support layer 12 made of a stainless steel plate.
  • a plate-like first phosphor layer 2 was prepared from a phosphor resin composition containing 15 parts by mass of a yellow phosphor and 100 parts by mass of a phenyl-based silicone resin composition.
  • the thickness L0 of the first phosphor layer 2 was 350 ⁇ m.
  • the first phosphor layer 2 was thermocompression bonded to the plurality of first phosphor layers 2.
  • the thermocompression bonding conditions were 90 ° C. and 10 minutes.
  • the first phosphor layer 2 was in direct contact with the upper surface of the first temporary fixing sheet 10 exposed from the plurality of optical semiconductor elements 1.
  • the thickness L4 of the upper first phosphor layer 52 was 150 ⁇ m, and the thickness L5 of the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 was 300 ⁇ m.
  • Step (2) As shown in FIG. 1C, a groove 3 was provided in the first phosphor layer 2 located between the adjacent optical semiconductor elements 1 by a dicing saw 35 having a thickness of 200 ⁇ m.
  • the width L6 of the groove 3 was 200 ⁇ m, and the depth L7 of the groove 3 was 280 ⁇ m. Further, the thickness L8 of the bottom portion 36 was 20 ⁇ m. The distance ⁇ between the inner side surface of the groove 3 and the side surface of the optical semiconductor element 1 was 100 ⁇ m.
  • a first covering element assembly 41 having a plurality of optical semiconductor elements 1 and a first phosphor layer 2 having grooves 3 was obtained.
  • Step (3) As a method of filling the groove 3 with the second coating layer 4, steps (i) to (v) were sequentially performed.
  • methacryloyloxyethyl isocyanate 13.5 parts by mass of methacryloyloxyethyl isocyanate is added to this, and methacryloyloxyethyl isocyanate (isocyanate group-containing compound) is added to the acrylic polymer to prepare an acrylic polymer having a carbon-carbon double bond. did.
  • an isocyanate-based crosslinking agent (trade name “Coronate L”, manufactured by Nippon Polyurethane Industry Co., Ltd.) with respect to 100 parts by mass of the solid content of the acrylic polymer in a toluene solution of the acrylic polymer, and light Polymerization initiator (trade name “Irgacure 127”, (2-hydroxy-1- ⁇ 4- [4- (2-hydroxy-2-methyl-propionyl) -benzyl] phenyl ⁇ -2-methyl-propan-1-one 2 parts by mass of Ciba Specialty Chemicals Co., Ltd.) was added to prepare a pressure-sensitive adhesive composed of a resin composition into which a carbon-carbon double bond was introduced.
  • an isocyanate-based crosslinking agent trade name “Coronate L”, manufactured by Nippon Polyurethane Industry Co., Ltd.
  • light Polymerization initiator (trade name “Irgacure 127”, (2-hydroxy-1- ⁇ 4- [4- (2-hydroxy-2-methyl
  • a pressure-sensitive adhesive layer 61 having a thickness of 30 ⁇ m was formed on the surface of the support sheet 62.
  • a pressure-sensitive adhesive layer 61 and a support sheet 62 were provided, and a protective sheet 6 having a thickness of 145 ⁇ m was prepared.
  • the tensile elastic modulus at 25 ° C. of the protective sheet 6 was 3,650 MPa.
  • the pressure-sensitive adhesive layer 61 of the protective sheet 6 was bonded to the upper surface of the upper first phosphor layer 52 using a hand roller. Note that the lower surface of the pressure-sensitive adhesive layer 61 and the bottom surface of the groove 3 were spaced apart.
  • the vacuum pump 20 is operated with the vacuum valve 21 and the atmospheric valve 23 opened, and then the first covering element assembly 41, the first temporary fixing sheet 10 and the protective sheet 6 are installed in the vacuum chamber 18. did.
  • the coating material 43 flowed into the sealed space 7 and the sealed space 7 was filled with the coating material 43. That is, the second coating layer 4 having the same shape as the sealed space 7 and made of the coating material 43 was formed. That is, the second coating layer 4 was filled in the groove 3. And the 2nd covering element aggregate
  • the second coating layer 4 and the bottom portion 36 were then cut along the thickness direction with a 40 ⁇ m thick dicing saw. Thereby, the some covered optical semiconductor element 5 was obtained in the state supported by the 1st temporary fixing sheet 10.
  • FIG. The width ⁇ of the second coating layer 4 was 300 ⁇ m.
  • the dimension of the coated optical semiconductor element 5 was 2440 ⁇ m ⁇ 2440 ⁇ m ⁇ 300 ⁇ m.
  • Step (4) As shown in FIG. 2I, the plurality of coated optical semiconductor elements 5 were transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 made of SPV-224 (manufactured by Nitto Denko Corporation).
  • the coated optical semiconductor element 5 was flip-chip mounted on the substrate 50 to obtain a light emitting device 51.
  • Example 2 In the step (2), except that the thickness L8 of the bottom portion 36 corresponding to the groove 3 was changed as shown in Table 1, the coated optical semiconductor element 5 was obtained in the same manner as in Example 1, and then light emission was performed. Device 51 was obtained.
  • step (2) as shown in FIG. 12A, the same treatment as in Example 1 was performed except that the dicing saw 35 provided an opening 3 ′ penetrating the first phosphor layer 2 in the thickness direction. Thus, a first covering element assembly 41 was obtained. The upper surface of the first temporary fixing sheet 10 was exposed from the opening 3 ′. In addition, the first phosphor layer 2 was not formed with the bottom portion 36 (the overhang portion).
  • step (3) as shown in FIG. 12B, the second coating layer 4 was in direct contact with the upper surface of the first temporary fixing sheet 10 at the opening 3 ′.
  • step (4) as shown in FIG. 12D, the coated optical semiconductor element 5 could not be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.
  • Example 4 In the step (3), instead of the method using the differential pressure (steps (ii) to (iv)), except that the second coating layer 4 was formed by molding, the same as in Example 2, The coated optical semiconductor element 5 was obtained, and then the light emitting device 51 was obtained.
  • Example 5 The coated optical semiconductor element 5 was obtained in the same manner as in Example 2 except that 10 parts by mass of carbon black was blended in place of 10 parts by mass of titanium oxide to prepare the coating material 43. Subsequently, the light-emitting device 51 was obtained. Got.
  • Example 7 A coated optical semiconductor element 5 was obtained in the same manner as in Example 4 except that the coating material 43 was prepared without blending titanium oxide, and then a light emitting device 51 was obtained.
  • step (2) as shown in FIG. 13A, the same treatment as in Example 7 was performed except that the dicing saw 35 provided an opening 3 ′ penetrating the first phosphor layer 2 in the thickness direction. Thus, a first covering element assembly 41 was obtained. The upper surface of the first temporary fixing sheet 10 was exposed from the opening 3 ′. In addition, the first phosphor layer 2 was not formed with the bottom portion 36 (the overhang portion).
  • step (3) as shown in FIG. 13B, the second coating layer 4 was in direct contact with the upper surface of the first temporary fixing sheet 10 at the opening 3 ′.
  • step (4) the coated optical semiconductor element 5 could not be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27 as shown in FIG. 13D.
  • Example 8 From the phosphor resin composition containing 0.8 parts by mass of the red phosphor and 100 parts by mass of the phenyl silicone resin composition, the plate-shaped first phosphor layer 2 was prepared, and the green phosphor 22 9 except that the coating material 43 was prepared from 100 parts by mass and 100 parts by mass of the methyl silicone resin composition, the coated optical semiconductor element 5 shown in FIG. As shown by the phantom lines in FIG. 9, the light emitting device 51 was obtained.
  • the coated optical semiconductor element 5 includes an optical semiconductor element 1, a first phosphor layer 2 containing a red phosphor and a phenyl silicone resin composition, a green phosphor and a methyl silicone resin composition. And a second phosphor layer 84 containing an object.
  • step (2) as shown in FIG. 14A, the same treatment as in Example 8 was performed except that the dicing saw 35 provided an opening 3 ′ penetrating the first phosphor layer 2 in the thickness direction. Thus, a second covering element assembly 29 was obtained. The upper surface of the first temporary fixing sheet 10 was exposed from the opening 3 ′. In addition, the first phosphor layer 2 was not formed with the bottom portion 36 (the overhang portion).
  • step (3) as shown in FIG. 14B, the second phosphor layer 84 was in direct contact with the upper surface of the first temporary fixing sheet 10 at the opening 3 ′.
  • step (4) as shown in FIG. 14D, the coated optical semiconductor element 5 could not be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.
  • Example 9 From the transparent resin composition comprising a phenyl silicone resin composition, a flat first coating layer 82 was prepared, and 100 parts by mass of a methyl silicone resin composition and 15 parts by mass of a yellow phosphor were coated.
  • the coated optical semiconductor element 5 shown in FIG. 11 was obtained in the same manner as in Example 4 except that the material 43 was prepared. Subsequently, as shown by the phantom line in FIG. 11, the light emitting device 51 was obtained. .
  • the coated optical semiconductor element 5 includes an optical semiconductor element 1, a first coating layer 82 (transparent layer) containing a phenyl silicone resin composition, a yellow phosphor, and a methyl silicone resin composition.
  • the 2nd fluorescent substance layer 84 containing is provided.
  • Adhesive force F1 to temporary fixing sheet In each Example and each Comparative Example, the adhesive force F1 of the first covering element assembly 41 with respect to the first temporary fixing sheet 10 after ultraviolet irradiation was measured by a 180 degree peel test.
  • the transferability of the coated optical semiconductor element 5 from the first temporary fixing sheet 10 to the first transfer sheet 27 was evaluated according to the following criteria. ⁇ : The coated optical semiconductor element 5 could be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27. X: The coated optical semiconductor element 5 could not be transferred from the first temporary fixing sheet 10 to the first transfer sheet 27.
  • the front luminance of the light emitting device 51 was turned on at 300 mA at room temperature using a light distribution measurement system and a spectroscope MCPDPD-9800 manufactured by Otsuka Electronics.
  • the light extraction efficiency of the light-emitting device 51 was evaluated by using an integrating sphere and spectroscope MCPD-9800 manufactured by Otsuka Electronics Co., Ltd., lighting at room temperature and 300 mA, measuring the total luminous flux, and evaluating according to the following criteria. ⁇ : 105 [lm / W] or more ⁇ : 90 [lm / W] or more, less than 105 [lm / W]
  • the coated optical semiconductor element obtained by this manufacturing method is flip-chip mounted on a substrate and used as a light emitting device.

Abstract

[Problème] Disposer d'un procédé de production d'un élément semi-conducteur optique couvert, qui soit capable de séparer de manière fiable un élément semi-conducteur optique couvert d'une feuille de fixation temporaire. [Solution] Un procédé de production d'un élément semi-conducteur optique couvert 5, qui comprend : une étape (1) pour préparer une pluralité d'éléments semi-conducteurs optiques 1 qui sont fixés temporairement sur la surface supérieure d'une première feuille de fixation temporaire 10 de manière à être séparés les uns des autres et une première couche de phosphore 2 qui recouvre la pluralité d'éléments semi-conducteurs optiques 1 de telle manière que la première couche de phosphore 2 soit en contact direct avec des parties de la surface supérieure de la première feuille de fixation temporaire 10, lesdites parties étant exposées, en dehors de celles correspondant à la pluralité d'éléments semi-conducteurs optiques 1 ; une étape (2) pour former une rainure 3 dans une partie de la première couche de phosphore 2, positionnée entre chacun des éléments semi-conducteurs optiques adjacents 1, ladite rainure 3 étant ouverte à sa partie supérieure ; une étape (3) pour remplir au moins la rainure 3 avec une deuxième couche de couverture 4, ce qui permet d'obtenir un élément semi-conducteur optique couvert 1 qui est doté des éléments semi-conducteurs optiques 1, de la première couche de phosphore 2 et de la deuxième couche de couverture 4 ; et une étape (4) pour séparer l'élément semi-conducteur optique couvert 1 de la première feuille de fixation temporaire 10. Dans l'étape (3), la première couche de phosphore 2 intervient entre la première feuille de fixation temporaire 10 et la deuxième couche de couverture 4 remplissant la rainure 3.
PCT/JP2015/085268 2014-12-17 2015-12-16 Procédé de production d'un élément semi-conducteur optique couvert WO2016098825A1 (fr)

Applications Claiming Priority (6)

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JP2014255110 2014-12-17
JP2014-255110 2014-12-17
JP2015-217792 2015-11-05
JP2015217792A JP2016119454A (ja) 2014-12-17 2015-11-05 蛍光体層被覆光半導体素子およびその製造方法
JP2015243519A JP6543564B2 (ja) 2015-12-14 2015-12-14 被覆光半導体素子の製造方法
JP2015-243519 2015-12-14

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120299017A1 (en) * 2011-05-24 2012-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Batwing led with remote phosphor configuration
JP2014168035A (ja) * 2012-06-29 2014-09-11 Nitto Denko Corp 封止層被覆半導体素子、その製造方法および半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120299017A1 (en) * 2011-05-24 2012-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Batwing led with remote phosphor configuration
JP2014168035A (ja) * 2012-06-29 2014-09-11 Nitto Denko Corp 封止層被覆半導体素子、その製造方法および半導体装置

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