WO2016095242A1 - 阵列基板、液晶显示面板及液晶显示面板的检测方法 - Google Patents
阵列基板、液晶显示面板及液晶显示面板的检测方法 Download PDFInfo
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- WO2016095242A1 WO2016095242A1 PCT/CN2014/094579 CN2014094579W WO2016095242A1 WO 2016095242 A1 WO2016095242 A1 WO 2016095242A1 CN 2014094579 W CN2014094579 W CN 2014094579W WO 2016095242 A1 WO2016095242 A1 WO 2016095242A1
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- transparent electrode
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- electrode
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Definitions
- the present invention relates to the field of liquid crystal display, and in particular to an array substrate, a liquid crystal display panel, and a method for detecting a liquid crystal display panel.
- FIG. 1 is a schematic circuit diagram of a conventional liquid crystal display panel.
- the liquid crystal display panel 10 includes a data line 11, a main scanning line 12, a sub-scanning line 13, a common line 16, a main pixel region 14 provided with a main liquid crystal capacitor 141, a main storage capacitor 142, and a first transistor 143, and a sub-liquid crystal.
- the main scanning line 12 inputs a high level, the first transistor 143 and the second transistor 154 are turned on, the secondary scanning line 13 is input with a low level, and the third transistor 155 is turned off, and the main liquid crystal is turned off.
- the capacitor 141, the main storage capacitor 142, the secondary liquid crystal capacitor 151, and the secondary storage capacitor 152 are charged to the same potential.
- the main scanning line 12 is input with a low level, the first transistor 143 and the second transistor 154 are turned off, the secondary scanning line 12 is input with a high level, the third transistor 155 is turned on, and the charge sharing capacitor 153 is used for the secondary storage capacitor 152 and the secondary liquid crystal.
- the potential of the capacitor 151 is pulled low, so that the potentials of the sub liquid crystal capacitor 151 and the sub storage capacitor 152 are lower than the potentials of the main liquid crystal capacitor 141 and the main storage capacitor 142.
- the steering distributions of the liquid crystal molecules of the main pixel region 14 and the sub-pixel region 15 are different, and the display luminances of the main pixel region 14 and the sub-pixel region 15 under the same signal driving are different, and the large viewing angle display of the liquid crystal display panel 10 is realized.
- FIG. 2A is a schematic structural view of an array substrate of a conventional liquid crystal display panel.
- Fig. 2B is a cross-sectional view taken along line A-A' of Fig. 2A.
- the charge sharing capacitor 153 has a shared capacitor transparent electrode 21, an insulating layer 22, and a common electrode 23.
- the liquid crystal capacitors (the main liquid crystal capacitor 141 and the sub liquid crystal capacitor 151) are composed of the pixel transparent electrode 24 and a transparent electrode on the counter substrate. Since the material of the transparent electrode (ITO or the like) may remain on the surface during the fabrication process of the array substrate, such as the residual ITO between the shared capacitor transparent electrode 21 and the pixel transparent electrode 24, the liquid crystal capacitor may be charged. At the same time, the charge sharing capacitor 153 is also charged, so that the pixel structure of the charge distribution is disabled.
- ITO transparent electrode
- An object of the present invention is to provide an array substrate, a liquid crystal display panel, and a liquid crystal display panel capable of detecting product defects caused by ITO residues on the surface of an array substrate, thereby solving the existing array substrate and liquid crystal display panel.
- the detection method of the liquid crystal display panel cannot detect the technical problem of product defects caused by ITO residue on the surface of the array substrate.
- An embodiment of the present invention provides an array substrate, including:
- a common electrode disposed on the substrate substrate for providing a common signal
- a pixel transparent electrode disposed on the insulating layer for forming a liquid crystal capacitor
- a shared capacitor transparent electrode disposed on the insulating layer for forming a charge sharing capacitor with the common electrode
- the pixel transparent electrode and the shared capacitor transparent electrode have an isolation region
- the common electrode extends to the isolation region, and is exposed on a surface of the isolation region through a trench on the insulating layer.
- the length of the trench is approximately equal to the length of the isolation region.
- a plurality of trenches for exposing the common electrode are disposed on the insulating layer.
- the array substrate further includes a data line, a main scan line, a sub-scan line, a first transistor, a second transistor, and a third transistor, the pixel transparent electrode including a main pixel transparent electrode and Sub-pixel transparent electrode.
- the data lines are respectively connected to the source of the first transistor and the source of the second transistor, and the main pixel transparent electrode and the drain of the first transistor are respectively a pole connected to a drain of the second transistor, the sub-pixel transparent electrode being respectively connected to a drain of the first transistor and a drain of the second transistor; the main scan line and the first a gate of the transistor is connected to a gate of the second transistor; the sub-scanning line is respectively connected to a gate of the third transistor, and a source of the third transistor is connected to the sub-pixel transparent electrode; The drain of the third transistor is connected to the shared capacitor transparent electrode.
- the shared transparent electrode is connected to the common electrode of the isolation region, and/or the pixel transparent electrode Connected to the common electrode of the isolation region.
- the present invention also provides a liquid crystal display panel comprising an array substrate, a counter substrate, and a liquid crystal layer disposed between the array substrate and the pair of cassette substrates; wherein the array substrate comprises:
- a common electrode disposed on the substrate substrate for providing a common signal
- a pixel transparent electrode disposed on the insulating layer for forming a liquid crystal capacitor
- a shared capacitor transparent electrode disposed on the insulating layer for forming a charge sharing capacitor with the common electrode
- the pixel transparent electrode and the shared capacitor transparent electrode have an isolation region
- the common electrode extends to the isolation region, and is exposed on a surface of the isolation region through a trench on the insulating layer.
- the length of the trench is approximately equal to the length of the isolation region.
- the insulating layer is provided with a plurality of trenches for exposing the common electrode.
- the array substrate further includes a data line, a main scan line, a sub-scan line, a first transistor, a second transistor, and a third transistor
- the pixel transparent electrode includes a main pixel transparent electrode. And sub-pixel transparent electrodes.
- the data lines are respectively connected to the source of the first transistor and the source of the second transistor, and the main pixel transparent electrode and the first transistor are respectively a drain connected to a drain of the second transistor, the sub-pixel transparent electrode being respectively connected to a drain of the first transistor and a drain of the second transistor; the main scan line and the first a gate of one transistor is connected to a gate of the second transistor; the secondary scan line is respectively connected to a gate of the third transistor, and a source of the third transistor is connected to the transparent electrode of the sub-pixel, The drain of the third transistor is connected to the shared capacitor transparent electrode.
- the shared transparent electrode is connected to the common electrode of the isolation region, and/or the pixel is transparent.
- An electrode is coupled to the common electrode of the isolation region.
- the present invention also provides a method for detecting a liquid crystal display panel, the liquid crystal display panel comprising an array substrate, a counter substrate, and a liquid crystal layer disposed between the array substrate and the pair of cassette substrates; wherein the array substrate comprises :
- a common electrode disposed on the substrate substrate for providing a common signal
- a pixel transparent electrode disposed on the insulating layer for forming a liquid crystal capacitor
- a shared capacitor transparent electrode disposed on the insulating layer for forming a charge sharing capacitor with the common electrode
- the pixel transparent electrode and the shared capacitor transparent electrode have an isolation region, the common electrode extends to the isolation region, and is exposed on a surface of the isolation region through a trench on the insulating layer;
- the detection method includes:
- the pixel transparent electrode is abnormal; if the display pixel corresponding to the pixel transparent electrode is a bright point, the pixel transparent electrode is normal.
- the shared transparent electrode is connected to the common electrode of the isolation region, and/or The pixel transparent electrode is connected to the common electrode of the isolation region.
- the length of the trench is approximately equal to the length of the isolation region.
- a plurality of trenches for exposing the common electrode are disposed on the insulating layer.
- the array substrate further includes a data line, a main scan line, a sub-scan line, a first transistor, a second transistor, and a third transistor
- the pixel transparent electrode includes a main Pixel transparent electrode and sub-pixel transparent electrode.
- the data lines are respectively connected to a source of the first transistor and a source of the second transistor, and the main pixel transparent electrode and the first a drain of one transistor is connected to a drain of the second transistor, and the sub-pixel transparent electrode is respectively connected to a drain of the first transistor and a drain of the second transistor;
- the main scan lines are respectively a gate of the first transistor and a gate of the second transistor are connected;
- the sub-scanning lines are respectively connected to a gate of the third transistor, and a source of the third transistor and the sub-pixel are transparent
- the electrodes are connected, and a drain of the third transistor is connected to the shared capacitor transparent electrode.
- the array substrate, the liquid crystal display panel, and the liquid crystal display panel of the present invention are preferably provided by providing a bare common electrode in the isolation region.
- the detection of the product defect caused by the ITO residue on the surface of the array substrate solves the technical problem that the conventional array substrate, the liquid crystal display panel, and the liquid crystal display panel detection method cannot detect the product defect caused by the ITO residue on the surface of the array substrate.
- FIG. 1 is a circuit diagram of a conventional liquid crystal display panel
- 2A is a schematic structural view of an array substrate of a conventional liquid crystal display panel
- Figure 2B is a cross-sectional view taken along line A-A' of Figure 2A;
- 3A is a schematic structural view of a first preferred embodiment of an array substrate of a liquid crystal display panel of the present invention
- Figure 3B is a cross-sectional view taken along line B-B' of Figure 3A;
- FIG. 4 is a schematic structural view showing a first preferred embodiment of the array substrate of the liquid crystal display panel of the present invention.
- FIG. 5A is a schematic structural view of a second preferred embodiment of an array substrate of a liquid crystal display panel of the present invention.
- Figure 5B is a cross-sectional view taken along line C-C' of Figure 5A;
- Fig. 6 is a flow chart showing a preferred embodiment of the method for detecting a liquid crystal display panel of the present invention.
- FIG. 3A is a schematic structural view of a first preferred embodiment of an array substrate of a liquid crystal display panel of the present invention
- FIG. 3B is a cross-sectional view taken along line B-B' of FIG. 3A
- the liquid crystal display panel of the preferred embodiment includes an array substrate 30, a counter substrate (not shown), and a liquid crystal layer (not shown) disposed between the array substrate 30 and the counter substrate.
- the array substrate 30 includes a substrate substrate 31, a common electrode 32, an insulating layer 33, a pixel transparent electrode 34, and a shared capacitance transparent electrode 35.
- the common electrode 32 is disposed on the substrate substrate 31 for providing a common signal; the insulating layer 33 is disposed on the common electrode 32 for isolating the common electrode 32 and the common capacitance transparent electrode 35; and the pixel transparent electrode 34 is disposed on the insulating layer 33.
- the upper surface is used to form a liquid crystal capacitor with the transparent electrode on the counter substrate; the shared capacitor transparent electrode 35 is disposed on the insulating layer 33 for forming a charge sharing capacitor with the common electrode 32.
- the pixel transparent electrode 34 includes a main pixel transparent electrode and a sub-pixel transparent electrode.
- the common electrode 32 extends to the isolation region 36, and is exposed on the surface of the isolation region 36 through the trench 331 on the insulating layer 33.
- the length of the trench 331 is approximately equal to the length of the isolation region 36.
- the array substrate of the liquid crystal display panel of the preferred embodiment further includes a data line 11, a main scan line 12, and a sub-scan.
- the line 13, the first transistor 143, the second transistor 154, and the third transistor 155, the pixel transparent electrode 34 includes a main pixel transparent electrode (on the main pixel capacitor 141) and a sub-pixel transparent electrode (on the sub-pixel capacitor 151).
- the data lines 11 are respectively connected to the source of the first transistor 143 and the source of the second transistor 154, and the main pixel transparent electrodes are respectively connected to the drain of the first transistor 143 and the drain of the second transistor 154, and the sub-pixel transparent electrodes are respectively Connected to the drain of the first transistor 143 and the drain of the second transistor 154, the main scan line 12 is connected to the gate of the first transistor 143 and the gate of the second transistor 154, respectively; the sub-scanning line 13 and the third transistor, respectively The gate of 155 is connected, the source of the third transistor 155 is connected to the sub-pixel transparent electrode, the drain of the third transistor 155 is connected to the shared capacitor transparent electrode 35 (on the charge sharing capacitor 153); A via hole on the insulating layer 33 is connected to the drain of the third transistor 155.
- the first transistor 143 and the second transistor 154 can be directly turned on through the main scanning line 12, and the third transistor 155 can be turned on through the sub-scanning line 13 such that the data line
- the detection signal on the 11 is input to the main pixel transparent electrode through the first transistor 143, and is input to the sub-pixel transparent electrode through the second transistor 154, and the detection signal on the sub-pixel transparent electrode is input to the shared capacitance transparent electrode 35 through the third transistor 155. In this way, the display state of the main pixel and the sub-pixel can be judged whether the main pixel and the sub-pixel can work normally.
- FIG. 4 is a structure when the first preferred embodiment of the array substrate of the liquid crystal display panel of the present invention is defective.
- schematic diagram. Fig. 4 is a schematic view showing the structure when ITO residual defects occur on the basis of Fig. 3 .
- the common electrode 32 pulls the potential on the pixel transparent electrode 34 through the residual ITO 41, so that the pixel corresponding to the pixel transparent electrode 34 is displayed as a dark spot.
- the pixel transparent electrode 34 is applied with a corresponding detection signal, so that the pixel corresponding to the pixel transparent electrode is displayed as a bright spot.
- the dark dot display or the bright spot display of the pixel it is possible to determine whether or not the surface of the array substrate 30 has a defect caused by residual ITO.
- the array substrate of the preferred embodiment can find all the pixel defects through the dark point display of the pixel. Therefore, the array substrate of the preferred embodiment can detect the surface of the array substrate well by providing a bare common electrode in the isolation region. Poor product caused by ITO residue.
- FIG. 5A is a schematic structural view of a second preferred embodiment of the array substrate of the liquid crystal display panel of the present invention
- FIG. 5B is an interface diagram taken along line C-C' of FIG. 5A.
- the array substrate 50 of the liquid crystal display panel of the preferred embodiment is provided with a plurality of trenches 51 for exposing the common electrode on the insulating layer.
- the arrangement of the plurality of trenches 51 can better detect the ITO residual defect on the surface of the array substrate 50. Even if the residual ITO does not conduct the shared capacitor transparent electrode and the pixel transparent electrode, the residual ITO may be detected. To avoid the conduction of the shared capacitor transparent electrode and the pixel transparent electrode caused by the use of the liquid crystal display panel.
- the array substrate of the liquid crystal display panel of the preferred embodiment further improves the reliability of the liquid crystal display panel by providing a plurality of trenches.
- the present invention also provides a method for detecting a liquid crystal display panel for performing defect detection on an array substrate of the above liquid crystal display panel. Please refer to FIG. 6.
- FIG. 6 is a flowchart of a method for detecting a liquid crystal display panel of the present invention.
- the method for detecting a liquid crystal display panel of the preferred embodiment includes:
- Step S601 according to the scan signal on the main scan line, input a detection signal to the main pixel transparent electrode through the data line and the first transistor, and input a detection signal to the sub-pixel transparent electrode through the data line and the second transistor;
- Step S602 inputting a detection signal to the shared capacitor transparent electrode through the sub-pixel transparent electrode according to the scan signal on the sub-scanning line;
- Step S603 inputting a common signal to the common electrode through a common line;
- step S604 if the display pixel corresponding to the pixel transparent electrode is a dark point, the pixel transparent electrode is abnormal; if the display pixel corresponding to the pixel transparent electrode is a bright point, the pixel transparent electrode is normal.
- step S601 a high-level scan signal is input on the main scan line, the first transistor is turned on, and the detection signal on the data line is input to the main pixel transparent electrode through the first transistor.
- the second transistor is also turned on under the control of the high-level scan signal of the main scanning line, and the detection signal on the data line is input to the sub-pixel transparent electrode through the second transistor; then, the process proceeds to step S602.
- step S602 a high-level scan signal is input on the sub-scanning line, the third transistor is turned on, and the detection signal on the sub-pixel transparent electrode is input to the shared-capacitance transparent electrode through the third transistor; then, the process proceeds to step S603.
- step S603 the common line inputs a common signal of a low level to the common electrode; then proceeds to step S604.
- step S604 the display condition of the display pixel is detected. If the display pixel corresponding to the pixel transparent electrode is a dark point, the shared transparent electrode is connected to the common electrode of the isolation region, and the pixel transparent electrode is connected to the common electrode of the isolation region, or shared. The transparent electrode and the pixel transparent electrode are simultaneously connected to the common electrode of the isolation region; the potential of the pixel transparent electrode is pulled low by the low potential on the common electrode, so the transparent electrode of the pixel is abnormal.
- the display pixel corresponding to the pixel transparent electrode is a bright point, it means that the shared transparent electrode is not connected to the common electrode, and the pixel transparent electrode is not connected to the common electrode; the main pixel transparent electrode and the sub-pixel transparent electrode are not low on the common electrode. The potential is pulled low, so the pixel transparent electrode is normal.
- the detection method of the liquid crystal display panel of the present invention can detect the defect of the ITO residue on the surface of the array substrate while detecting the display of the pixel.
- the method for detecting an array substrate, a liquid crystal display panel and a liquid crystal display panel of the present invention can detect a product defect caused by ITO residue on the surface of the array substrate by providing a bare common electrode in the isolation region; and solving the existing array
- the detection methods of the substrate, the liquid crystal display panel, and the liquid crystal display panel cannot detect the technical problem of product defects caused by ITO residue on the surface of the array substrate.
Abstract
一种阵列基板(30),其包括基板衬底(31)、公共电极(32)、绝缘层(33)、像素透明电极(34)以及共享电容透明电极(35);其中像素透明电极(34)和共享电容透明电极(35)之间具有一隔离区域(36),公共电极(32)延伸至隔离区域(36),并通过绝缘层(33)上的沟槽(331)裸露在隔离区域(36)的表面。该阵列基板(30)可很好的检测由于阵列基板(30)表面的ITO残留(41)导致的产品不良。
Description
本发明涉及液晶显示领域,特别是涉及一种阵列基板、液晶显示面板及液晶显示面板的检测方法。
随着社会的发展,液晶显示装置已逐渐成为越来越重要的主流显示装置。为了改善垂直取向型液晶显示装置在大视角出现的色偏现象,会采用电荷分配(Charge
Sharing)的像素设计,即像素分为主像素(Main Pixel)和次像素(Sub Pixel)两个区域。
请参照图1,图1为现有的液晶显示面板的电路示意图。该液晶显示面板10包括数据线11、主扫描线12、次扫描线13、公共线16、设置有主液晶电容141、主存储电容142以及第一晶体管143的主像素区域14以及设置有次液晶电容151、次存储电容152、电荷共享电容153、第二晶体管154以及第三晶体管155的次像素区域15。
该液晶显示面板10正常显示时,主扫描线12输入高电平,第一晶体管143和第二晶体管154导通,次扫描线13输入低电平,第三晶体管155断开,这时主液晶电容141、主存储电容142、次液晶电容151以及次存储电容152充电到相同的电位。随后主扫描线12输入低电平,第一晶体管143和第二晶体管154断开,次扫描线12输入高电平,第三晶体管155导通,电荷共享电容153将次存储电容152和次液晶电容151的电位拉低,使得次液晶电容151和次存储电容152的电位低于主液晶电容141和主存储电容142的电位。这样使得主像素区域14和次像素区域15的液晶分子的转向分布不同,主像素区域14和次像素区域15在相同信号驱动下的显示亮度不同,实现了液晶显示面板10的大视角显示。
请参照图2A和图2B,图2A为现有的液晶显示面板的阵列基板的结构示意图。图2B为沿图2A的A-A’截面线的截面图。其中电荷共享电容153有共享电容透明电极21、绝缘层22以及公共电极23构成。液晶电容(主液晶电容141和次液晶电容151)由像素透明电极24和对盒基板上的透明电极构成。由于该阵列基板在制作过程中,可能会在表面残留透明电极的材料(ITO等),如该残留的ITO如在共享电容透明电极21和像素透明电极24之间,可能会导致液晶电容充电时,同时给电荷共享电容153也进行充电操作,使得电荷分配的像素结构失效。
现有技术在进行液晶显示面板的检测时,无法对上述不良进行检测。
故,有必要提供一种阵列基板、液晶显示面板及液晶显示面板的检测方法,以解决现有技术所存在的问题。
本发明的目的在于提供一种可很好的检测由阵列基板表面的ITO残留导致的产品不良的阵列基板、液晶显示面板及液晶显示面板的检测方法;以解决现有的阵列基板、液晶显示面板及液晶显示面板的检测方法无法检测阵列基板表面的ITO残留导致的产品不良的技术问题。
本发明实施例提供一种阵列基板,其包括:
基板衬底;
公共电极,设置在所述基板衬底上,用于提供公共信号;
绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;
像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及
共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;
其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
在本发明所述的阵列基板中,所述沟槽的长度约等于所述隔离区域的长度。
在本发明所述的阵列基板中,所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
在本发明所述的阵列基板中,所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极。
在本发明所述的阵列基板中,所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
在本发明所述的阵列基板中,如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
本发明还提供一种液晶显示面板,其包括阵列基板、对盒基板以及设置在所述阵列基板和所述对盒基板之间的液晶层;其中所述阵列基板包括:
基板衬底;
公共电极,设置在所述基板衬底上,用于提供公共信号;
绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;
像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及
共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;
其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
在本发明所述的液晶显示面板中,所述沟槽的长度约等于所述隔离区域的长度。
在本发明所述的液晶显示面板中,所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
在本发明所述的液晶显示面板中,所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极。
在本发明所述的液晶显示面板中,所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
在本发明所述的液晶显示面板中,如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
本发明还提供一种液晶显示面板的检测方法,所述液晶显示面板包括阵列基板、对盒基板以及设置在所述阵列基板和所述对盒基板之间的液晶层;其中所述阵列基板包括:
基板衬底;
公共电极,设置在所述基板衬底上,用于提供公共信号;
绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;
像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及
共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;
其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面;
其中所述检测方法包括:
根据所述主扫描线上的扫描信号,通过所述数据线以及所述第一晶体管向所述主像素透明电极输入检测信号,通过所述数据线以及所述第二晶体管向所述次像素透明电极输入检测信号;
根据所述次扫描线上的扫描信号,通过所述次像素透明电极向所述共享电容透明电极输入检测信号;
通过公共线向公共电极输入公共信号;以及
如所述像素透明电极对应的显示像素为暗点,则所述像素透明电极异常;如所述像素透明电极对应的显示像素为亮点,则所述像素透明电极正常。
在本发明所述的液晶显示面板的检测方法中,如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
在本发明所述的液晶显示面板的检测方法中,所述沟槽的长度约等于所述隔离区域的长度。
在本发明所述的液晶显示面板的检测方法中,所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
在本发明所述的液晶显示面板的检测方法中,所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极。
在本发明所述的液晶显示面板的检测方法中,所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
相较于现有的阵列基板、液晶显示面板及液晶显示面板的检测方法,本发明的阵列基板、液晶显示面板及液晶显示面板的检测方法通过在隔离区域设置一裸露的公共电极,可很好的检测由阵列基板表面的ITO残留导致的产品不良;解决了现有的阵列基板、液晶显示面板及液晶显示面板的检测方法无法检测阵列基板表面的ITO残留导致的产品不良的技术问题。
图1为现有的液晶显示面板的电路示意图;
图2A为现有的液晶显示面板的阵列基板的结构示意图;
图2B为沿图2A的A-A’截面线的截面图;
图3A为本发明的液晶显示面板的阵列基板的第一优选实施例的结构示意图;
图3B为沿图3A的B-B’截面线的截面图;
图4为本发明的液晶显示面板的阵列基板的第一优选实施例发生不良时的结构示意图;
图5A为本发明的液晶显示面板的阵列基板的第二优选实施例的结构示意图;
图5B为沿图5A的C-C’截面线的截面图;
图6为本发明的液晶显示面板的检测方法的优选实施例的流程图。
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
在图中,结构相似的单元是以相同标号表示。
请参照图3A和图3B,图3A为本发明的液晶显示面板的阵列基板的第一优选实施例的结构示意图;图3B为沿图3A的B-B’截面线的截面图。本优选实施例的液晶显示面板包括阵列基板30、对盒基板(图中未示出)以及设置在阵列基板30和对盒基板之间的液晶层(图中未示出)。该阵列基板30包括基板衬底31、公共电极32、绝缘层33、像素透明电极34以及共享电容透明电极35。其中公共电极32设置在基板衬底31上,用于提供公共信号;绝缘层33设置在公共电极32上,用于隔离公共电极32与公共电容透明电极35;像素透明电极34设置在绝缘层33上,用于与对盒基板上的透明电极形成液晶电容;共享电容透明电极35设置在绝缘层33上,用于与公共电极32形成电荷共享电容。在本优选实施例中像素透明电极34包括主像素透明电极和次像素透明电极。
在本优选实施例中,像素透明电极和共享电容透明电极之间具有一隔离区域36,公共电极32延伸至隔离区域36,并通过绝缘层33上的沟槽331裸露在隔离区域36的表面。该沟槽331的长度约等于隔离区域36的长度。
本优选实施例的液晶显示面板的电路结构与现有技术的电路结构相同,如图1所示,本优选实施例的液晶显示面板的阵列基板还包括数据线11、主扫描线12、次扫描线13、第一晶体管143、第二晶体管154以及第三晶体管155,像素透明电极34包括主像素透明电极(主像素电容141上)和次像素透明电极(次像素电容151上)。数据线11分别与第一晶体管143的源极和第二晶体管154的源极连接,主像素透明电极分别与第一晶体管143的漏极和第二晶体管154的漏极连接,次像素透明电极分别与第一晶体管143的漏极和第二晶体管154的漏极连接,主扫描线12分别与第一晶体管143的栅极和第二晶体管154的栅极连接;次扫描线13分别与第三晶体管155的栅极连接,第三晶体管155的源极与次像素透明电极连接,第三晶体管155的漏极与共享电容透明电极35(电荷共享电容153上)连接;如共享电容透明电极35通过设置在绝缘层33上的通孔与第三晶体管155的漏极连接。
本优选实施例的液晶显示面板的阵列基板30进行检测时,可直接通过主扫描线12导通第一晶体管143和第二晶体管154,通过次扫描线13导通第三晶体管155,这样数据线11上的检测信号通过第一晶体管143输入到主像素透明电极,通过第二晶体管154输入到次像素透明电极,次像素透明电极上的检测信号通过第三晶体管155输入到共享电容透明电极35。这样即可主像素和次像素的显示状态,判断主像素和次像素能否正常工作。
随后通过公共线16向公共电极32输入公共信号,如阵列基板30的表面具有残留的、并能到导通共享电容透明电极35和像素透明电极34(如次像素透明电极)的ITO(氧化铟锡),则该ITO必然会设置在隔离区域36的公共电极32上,具体可如图4所示,图4为本发明的液晶显示面板的阵列基板的第一优选实施例发生不良时的结构示意图。图4是指在图3的基础上发生ITO残留不良时的结构示意图。这样公共电极32会通过残留的ITO41将像素透明电极34上的电位拉低,从而使得像素透明电极34对应的像素显示为暗点。
如阵列基板30的表面不具有残留的ITO,则像素透明电极34施加有相应的检测信号,从而像素透明电极对应的像素显示为亮点。这样通过像素的暗点显示或亮点显示,即可判断该阵列基板30的表面是否存在ITO残留导致的不良。
这样本优选实施例的阵列基板可以通过像素的暗点显示发现所有的像素不良,因此本优选实施例的阵列基板通过在隔离区域设置一裸露的公共电极,可很好的检测由阵列基板表面的ITO残留导致的产品不良。
请参照图5A和图5B,图5A为本发明的液晶显示面板的阵列基板的第二优选实施例的结构示意图;图5B为沿图5A的C-C’截面线的界面图。在第一优选实施例的基础上,本优选实施例的液晶显示面板的阵列基板50在绝缘层上设置有多条用于裸露公共电极的沟槽51。多条沟槽51的设置可以更好的检测到阵列基板50的表面的ITO残留不良,即使该残留的ITO不会导通共享电容透明电极和像素透明电极,也可能将上述残留的ITO检测出来,避免液晶显示面板使用过程中导致的共享电容透明电极和像素透明电极的导通。
因此本优选实施例的液晶显示面板的阵列基板通过设置多条沟槽,进一步提高了液晶显示面板的可靠性。
本发明还提供一种液晶显示面板的检测方法,用于对上述的液晶显示面板的阵列基板进行不良检测。请参照图6,图6为本发明的液晶显示面板的检测方法的流程图。本优选实施例的液晶显示面板的检测方法包括:
步骤S601,根据主扫描线上的扫描信号,通过数据线以及第一晶体管向主像素透明电极输入检测信号,通过数据线以及第二晶体管向次像素透明电极输入检测信号;
步骤S602,根据次扫描线上的扫描信号,通过次像素透明电极向共享电容透明电极输入检测信号;
步骤S603,通过公共线向公共电极输入公共信号;
步骤S604,如像素透明电极对应的显示像素为暗点,则像素透明电极异常;如像素透明电极对应的显示像素为亮点,则像素透明电极正常。
下面详细说明本优选实施例的液晶显示面板的检测方法的各步骤的具体流程。
在步骤S601中,主扫描线上输入高电平的扫描信号,第一晶体管导通,数据线上的检测信号通过第一晶体管输入到主像素透明电极。同时第二晶体管在主扫描线的高电平的扫描信号的控制下也导通,数据线上的检测信号通过第二晶体管输入到次像素透明电极;随后转到步骤S602。
在步骤S602中,次扫描线上输入高电平的扫描信号,第三晶体管导通,次像素透明电极上的检测信号通过第三晶体管输入到共享电容透明电极;随后转到步骤S603。
在步骤S603中,公共线向公共电极输入低电平的公共信号;随后转到步骤S604。
在步骤S604中,检测显示像素的显示情况,如像素透明电极对应的显示像素为暗点,则说明共享透明电极与隔离区域的公共电极连接,像素透明电极与隔离区域的公共电极连接,或共享透明电极、像素透明电极同时与隔离区域的公共电极连接;像素透明电极的电位被公共电极上的低电位拉低,因此该像素透明电极异常。
如像素透明电极对应的显示像素为亮点,则说明共享透明电极并未与公共电极连接,像素透明电极也未与公共电极连接;主像素透明电极以及次像素透明电极均未被公共电极上的低电位拉低,因此该像素透明电极正常。
这样即完成了本优选实施例的液晶显示面板的检测过程。
本发明的液晶显示面板的检测方法可以很好的在检测像素显示的同时,对阵列基板表面的ITO残留的不良进行检测。
本发明的阵列基板、液晶显示面板及液晶显示面板的检测方法通过在隔离区域设置一裸露的公共电极,可很好的检测由阵列基板表面的ITO残留导致的产品不良;解决了现有的阵列基板、液晶显示面板及液晶显示面板的检测方法无法检测阵列基板表面的ITO残留导致的产品不良的技术问题。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (18)
- 一种阵列基板,其包括:基板衬底;公共电极,设置在所述基板衬底上,用于提供公共信号;绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
- 根据权利要求1所述的阵列基板,其中所述沟槽的长度约等于所述隔离区域的长度。
- 根据权利要求1所述的阵列基板,其中所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
- 根据权利要求1所述的阵列基板,其中所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极。
- 根据权利要求4所述的阵列基板,其中所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
- 根据权利要求1所述的阵列基板,其中如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
- 一种液晶显示面板,其包括阵列基板、对盒基板以及设置在所述阵列基板和所述对盒基板之间的液晶层;其中所述阵列基板包括:基板衬底;公共电极,设置在所述基板衬底上,用于提供公共信号;绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
- 根据权利要求7所述的液晶显示面板,其中所述沟槽的长度约等于所述隔离区域的长度。
- 根据权利要求7所述的液晶显示面板,其中所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
- 根据权利要求7所述的液晶显示面板,其中所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极。
- 根据权利要求10所述的液晶显示面板,其中所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
- 根据权利要求10所述的液晶显示面板,其中如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
- 一种液晶显示面板的检测方法,所述液晶显示面板包括阵列基板、对盒基板以及设置在所述阵列基板和所述对盒基板之间的液晶层;其中所述阵列基板包括:基板衬底;公共电极,设置在所述基板衬底上,用于提供公共信号;绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面;其中所述检测方法包括:根据所述主扫描线上的扫描信号,通过所述数据线以及所述第一晶体管向所述主像素透明电极输入检测信号,通过所述数据线以及所述第二晶体管向所述次像素透明电极输入检测信号;根据所述次扫描线上的扫描信号,通过所述次像素透明电极向所述共享电容透明电极输入检测信号;通过公共线向公共电极输入公共信号;以及如所述像素透明电极对应的显示像素为暗点,则所述像素透明电极异常;如所述像素透明电极对应的显示像素为亮点,则所述像素透明电极正常。
- 根据权利要求13所述的液晶显示面板的检测方法,其中如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
- 根据权利要求13所述的液晶显示面板的检测方法,其中所述沟槽的长度约等于所述隔离区域的长度。
- 根据权利要求13所述的液晶显示面板的检测方法,其中所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
- 根据权利要求13所述的液晶显示面板的检测方法,其中所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极。
- 根据权利要求17所述的液晶显示面板的检测方法,其中所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030137628A1 (en) * | 2002-01-18 | 2003-07-24 | Fujitsu Display Technologies Corporation | Substrate for liquid crystal display, liquid crystal display having the same, and method of manufacturing the same |
CN1490645A (zh) * | 2002-10-18 | 2004-04-21 | 奇美电子股份有限公司 | 具有储存电容器的像素结构与其形成方法及液晶显示装置 |
US20040246433A1 (en) * | 2003-06-03 | 2004-12-09 | Hsin-Hung Chen | Method and repairing defects in a liquid crystal display |
CN1862648A (zh) * | 2006-05-25 | 2006-11-15 | 友达光电股份有限公司 | 一种像素结构及其检修方法与制造方法 |
US20070013852A1 (en) * | 2002-09-13 | 2007-01-18 | Nec Lcd Technologies, Ltd. | Liquid crystal display |
TW200811567A (en) * | 2006-08-31 | 2008-03-01 | Au Optronics Corp | Liquid crystal display, active matrix substrate and test method therefor |
TW200829931A (en) * | 2007-01-03 | 2008-07-16 | Au Optronics Corp | A display panel and a short detection apparatus thereof |
JP2010049028A (ja) * | 2008-08-21 | 2010-03-04 | Ips Alpha Technology Ltd | 液晶表示装置 |
CN103235428A (zh) * | 2013-05-06 | 2013-08-07 | 深圳市华星光电技术有限公司 | 液晶面板的暗点修复方法及液晶面板 |
CN104122724A (zh) * | 2014-07-04 | 2014-10-29 | 深圳市华星光电技术有限公司 | 低色偏液晶阵列基板及其驱动方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130146876A1 (en) * | 2011-12-07 | 2013-06-13 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Thin film transistor array substrate and manufacturing method thereof |
CN102420183B (zh) * | 2011-12-07 | 2014-02-05 | 深圳市华星光电技术有限公司 | Tft阵列基板的制作方法及tft阵列基板 |
-
2014
- 2014-12-17 CN CN201410785475.6A patent/CN104503158B/zh active Active
- 2014-12-23 WO PCT/CN2014/094579 patent/WO2016095242A1/zh active Application Filing
- 2014-12-23 US US14/417,525 patent/US9728112B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030137628A1 (en) * | 2002-01-18 | 2003-07-24 | Fujitsu Display Technologies Corporation | Substrate for liquid crystal display, liquid crystal display having the same, and method of manufacturing the same |
US20070013852A1 (en) * | 2002-09-13 | 2007-01-18 | Nec Lcd Technologies, Ltd. | Liquid crystal display |
CN1490645A (zh) * | 2002-10-18 | 2004-04-21 | 奇美电子股份有限公司 | 具有储存电容器的像素结构与其形成方法及液晶显示装置 |
US20040246433A1 (en) * | 2003-06-03 | 2004-12-09 | Hsin-Hung Chen | Method and repairing defects in a liquid crystal display |
CN1862648A (zh) * | 2006-05-25 | 2006-11-15 | 友达光电股份有限公司 | 一种像素结构及其检修方法与制造方法 |
TW200811567A (en) * | 2006-08-31 | 2008-03-01 | Au Optronics Corp | Liquid crystal display, active matrix substrate and test method therefor |
TW200829931A (en) * | 2007-01-03 | 2008-07-16 | Au Optronics Corp | A display panel and a short detection apparatus thereof |
JP2010049028A (ja) * | 2008-08-21 | 2010-03-04 | Ips Alpha Technology Ltd | 液晶表示装置 |
CN103235428A (zh) * | 2013-05-06 | 2013-08-07 | 深圳市华星光电技术有限公司 | 液晶面板的暗点修复方法及液晶面板 |
CN104122724A (zh) * | 2014-07-04 | 2014-10-29 | 深圳市华星光电技术有限公司 | 低色偏液晶阵列基板及其驱动方法 |
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