CN104503158A - 阵列基板、液晶显示面板及液晶显示面板的检测方法 - Google Patents
阵列基板、液晶显示面板及液晶显示面板的检测方法 Download PDFInfo
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Abstract
本发明提供一种阵列基板、液晶显示面板及液晶显示面板的检测方法。该阵列基板包括基板衬底、公共电极、绝缘层、像素透明电极以及共享电容透明电极;其中像素透明电极和共享电容透明电极之间具有一隔离区域,公共电极延伸至隔离区域,并通过绝缘层上的沟槽裸露在隔离区域的表面。本发明还提供一种液晶显示面板及液晶显示面板的检测方法。本发明可很好的检测由于阵列基板表面的ITO残留导致的产品不良。
Description
技术领域
本发明涉及液晶显示领域,特别是涉及一种阵列基板、液晶显示面板及液晶显示面板的检测方法。
背景技术
随着社会的发展,液晶显示装置已逐渐成为越来越重要的主流显示装置。为了改善垂直取向型液晶显示装置在大视角出现的色偏现象,会采用电荷分配(Charge Sharing)的像素设计,即像素分为主像素(Main Pixel)和次像素(Sub Pixel)两个区域。
请参照图1,图1为现有的液晶显示面板的电路示意图。该液晶显示面板10包括数据线11、主扫描线12、次扫描线13、公共线16、设置有主液晶电容141、主存储电容142以及第一晶体管143的主像素区域14以及设置有次液晶电容151、次存储电容152、电荷共享电容153、第二晶体管154以及第三晶体管155的次像素区域15。
该液晶显示面板10正常显示时,主扫描线12输入高电平,第一晶体管143和第二晶体管154导通,次扫描线13输入低电平,第三晶体管155断开,这时主液晶电容141、主存储电容142、次液晶电容151以及次存储电容152充电到相同的电位。随后主扫描线12输入低电平,第一晶体管143和第二晶体管154断开,次扫描线12输入高电平,第三晶体管155导通,电荷共享电容153将次存储电容152和次液晶电容151的电位拉低,使得次液晶电容151和次存储电容152的电位低于主液晶电容141和主存储电容142的电位。这样使得主像素区域14和次像素区域15的液晶分子的转向分布不同,主像素区域14和次像素区域15在相同信号驱动下的显示亮度不同,实现了液晶显示面板10的大视角显示。
请参照图2A和图2B,图2A为现有的液晶显示面板的阵列基板的结构示意图。图2B为沿图2A的A-A’截面线的截面图。其中电荷共享电容153有共享电容透明电极21、绝缘层22以及公共电极23构成。液晶电容(主液晶电容141和次液晶电容151)由像素透明电极24和对盒基板上的透明电极构成。由于该阵列基板在制作过程中,可能会在表面残留透明电极的材料(ITO等),如该残留的ITO如在共享电容透明电极21和像素透明电极24之间,可能会导致液晶电容充电时,同时给电荷共享电容153也进行充电操作,使得电荷分配的像素结构失效。
现有技术在进行液晶显示面板的检测时,无法对上述不良进行检测。
故,有必要提供一种阵列基板、液晶显示面板及液晶显示面板的检测方法,以解决现有技术所存在的问题。
发明内容
本发明的目的在于提供一种可很好的检测由阵列基板表面的ITO残留导致的产品不良的阵列基板、液晶显示面板及液晶显示面板的检测方法;以解决现有的阵列基板、液晶显示面板及液晶显示面板的检测方法无法检测阵列基板表面的ITO残留导致的产品不良的技术问题。
为解决上述问题,本发明提供的技术方案如下:
本发明实施例提供一种阵列基板,其包括:
基板衬底;
公共电极,设置在所述基板衬底上,用于提供公共信号;
绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;
像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及
共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;
其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
在本发明所述的阵列基板中,所述沟槽的长度约等于所述隔离区域的长度。
在本发明所述的阵列基板中,所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
在本发明所述的阵列基板中,所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极;
所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
本发明还提供一种液晶显示面板,其包括阵列基板、对盒基板以及设置在所述阵列基板和所述对盒基板之间的液晶层;其中所述阵列基板包括:
基板衬底;
公共电极,设置在所述基板衬底上,用于提供公共信号;
绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;
像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及
共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;
其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
在本发明所述的液晶显示面板中,所述沟槽的长度约等于所述隔离区域的长度。
在本发明所述的液晶显示面板中,所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
在本发明所述的液晶显示面板中,所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极;
所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
本发明还提供一种液晶显示面板的检测方法,其包括:
根据所述主扫描线上的扫描信号,通过所述数据线以及所述第一晶体管向所述主像素透明电极输入检测信号,通过所述数据线以及所述第二晶体管向所述次像素透明电极输入检测信号;
根据所述次扫描线上的扫描信号,通过所述次像素透明电极向所述共享电容透明电极输入检测信号;
通过公共线向公共电极输入公共信号;以及
如所述像素透明电极对应的显示像素为暗点,则所述像素透明电极异常;如所述像素透明电极对应的显示像素为亮点,则所述像素透明电极正常。
在本发明所述的液晶显示面板的检测方法中,如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
相较于现有的阵列基板、液晶显示面板及液晶显示面板的检测方法,本发明的阵列基板、液晶显示面板及液晶显示面板的检测方法通过在隔离区域设置一裸露的公共电极,可很好的检测由阵列基板表面的ITO残留导致的产品不良;解决了现有的阵列基板、液晶显示面板及液晶显示面板的检测方法无法检测阵列基板表面的ITO残留导致的产品不良的技术问题。
为让本发明的上述内容能更明显易懂,下文特举优选实施例,并配合所附图式,作详细说明如下:
附图说明
图1为现有的液晶显示面板的电路示意图;
图2A为现有的液晶显示面板的阵列基板的结构示意图;
图2B为沿图2A的A-A’截面线的截面图;
图3A为本发明的液晶显示面板的阵列基板的第一优选实施例的结构示意图;
图3B为沿图3A的B-B’截面线的截面图;
图4为本发明的液晶显示面板的阵列基板的第一优选实施例发生不良时的结构示意图;
图5A为本发明的液晶显示面板的阵列基板的第二优选实施例的结构示意图;
图5B为沿图5A的C-C’截面线的截面图;
图6为本发明的液晶显示面板的检测方法的优选实施例的流程图。
具体实施方式
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
在图中,结构相似的单元是以相同标号表示。
请参照图3A和图3B,图3A为本发明的液晶显示面板的阵列基板的第一优选实施例的结构示意图;图3B为沿图3A的B-B’截面线的截面图。本优选实施例的液晶显示面板包括阵列基板30、对盒基板(图中未示出)以及设置在阵列基板30和对盒基板之间的液晶层(图中未示出)。该阵列基板30包括基板衬底31、公共电极32、绝缘层33、像素透明电极34以及共享电容透明电极35。其中公共电极32设置在基板衬底31上,用于提供公共信号;绝缘层33设置在公共电极32上,用于隔离公共电极32与公共电容透明电极35;像素透明电极34设置在绝缘层33上,用于与对盒基板上的透明电极形成液晶电容;共享电容透明电极35设置在绝缘层33上,用于与公共电极32形成电荷共享电容。在本优选实施例中像素透明电极34包括主像素透明电极和次像素透明电极。
在本优选实施例中,像素透明电极和共享电容透明电极之间具有一隔离区域36,公共电极32延伸至隔离区域36,并通过绝缘层33上的沟槽331裸露在隔离区域36的表面。该沟槽331的长度约等于隔离区域36的长度。
本优选实施例的液晶显示面板的电路结构与现有技术的电路结构相同,如图1所示,本优选实施例的液晶显示面板的阵列基板还包括数据线11、主扫描线12、次扫描线13、第一晶体管143、第二晶体管154以及第三晶体管155,像素透明电极34包括主像素透明电极(主像素电容141上)和次像素透明电极(次像素电容151上)。数据线11分别与第一晶体管143的源极和第二晶体管154的源极连接,主像素透明电极分别与第一晶体管143的漏极和第二晶体管154的漏极连接,次像素透明电极分别与第一晶体管143的漏极和第二晶体管154的漏极连接,主扫描线12分别与第一晶体管143的栅极和第二晶体管154的栅极连接;次扫描线13分别与第三晶体管155的栅极连接,第三晶体管155的源极与次像素透明电极连接,第三晶体管155的漏极与共享电容透明电极35(电荷共享电容153上)连接;如共享电容透明电极35通过设置在绝缘层33上的通孔与第三晶体管155的漏极连接。
本优选实施例的液晶显示面板的阵列基板30进行检测时,可直接通过主扫描线12导通第一晶体管143和第二晶体管154,通过次扫描线13导通第三晶体管155,这样数据线11上的检测信号通过第一晶体管143输入到主像素透明电极,通过第二晶体管154输入到次像素透明电极,次像素透明电极上的检测信号通过第三晶体管155输入到共享电容透明电极35。这样即可主像素和次像素的显示状态,判断主像素和次像素能否正常工作。
随后通过公共线16向公共电极32输入公共信号,如阵列基板30的表面具有残留的、并能到导通共享电容透明电极35和像素透明电极34(如次像素透明电极)的ITO(氧化铟锡),则该ITO必然会设置在隔离区域36的公共电极32上,具体可如图4所示,图4为本发明的液晶显示面板的阵列基板的第一优选实施例发生不良时的结构示意图。图4是指在图3的基础上发生ITO残留不良时的结构示意图。这样公共电极32会通过残留的ITO41将像素透明电极34上的电位拉低,从而使得像素透明电极34对应的像素显示为暗点。
如阵列基板30的表面不具有残留的ITO,则像素透明电极34施加有相应的检测信号,从而像素透明电极对应的像素显示为亮点。这样通过像素的暗点显示或亮点显示,即可判断该阵列基板30的表面是否存在ITO残留导致的不良。
这样本优选实施例的阵列基板可以通过像素的暗点显示发现所有的像素不良,因此本优选实施例的阵列基板通过在隔离区域设置一裸露的公共电极,可很好的检测由阵列基板表面的ITO残留导致的产品不良。
请参照图5A和图5B,图5A为本发明的液晶显示面板的阵列基板的第二优选实施例的结构示意图;图5B为沿图5A的C-C’截面线的界面图。在第一优选实施例的基础上,本优选实施例的液晶显示面板的阵列基板50在绝缘层上设置有多条用于裸露公共电极的沟槽51。多条沟槽51的设置可以更好的检测到阵列基板50的表面的ITO残留不良,即使该残留的ITO不会导通共享电容透明电极和像素透明电极,也可能将上述残留的ITO检测出来,避免液晶显示面板使用过程中导致的共享电容透明电极和像素透明电极的导通。
因此本优选实施例的液晶显示面板的阵列基板通过设置多条沟槽,进一步提高了液晶显示面板的可靠性。
本发明还提供一种液晶显示面板的检测方法,用于对上述的液晶显示面板的阵列基板进行不良检测。请参照图6,图6为本发明的液晶显示面板的检测方法的流程图。本优选实施例的液晶显示面板的检测方法包括:
步骤S601,根据主扫描线上的扫描信号,通过数据线以及第一晶体管向主像素透明电极输入检测信号,通过数据线以及第二晶体管向次像素透明电极输入检测信号;
步骤S602,根据次扫描线上的扫描信号,通过次像素透明电极向共享电容透明电极输入检测信号;
步骤S603,通过公共线向公共电极输入公共信号;
步骤S604,如像素透明电极对应的显示像素为暗点,则像素透明电极异常;如像素透明电极对应的显示像素为亮点,则像素透明电极正常。
下面详细说明本优选实施例的液晶显示面板的检测方法的各步骤的具体流程。
在步骤S601中,主扫描线上输入高电平的扫描信号,第一晶体管导通,数据线上的检测信号通过第一晶体管输入到主像素透明电极。同时第二晶体管在主扫描线的高电平的扫描信号的控制下也导通,数据线上的检测信号通过第二晶体管输入到次像素透明电极;随后转到步骤S602。
在步骤S602中,次扫描线上输入高电平的扫描信号,第三晶体管导通,次像素透明电极上的检测信号通过第三晶体管输入到共享电容透明电极;随后转到步骤S603。
在步骤S603中,公共线向公共电极输入低电平的公共信号;随后转到步骤S604。
在步骤S604中,检测显示像素的显示情况,如像素透明电极对应的显示像素为暗点,则说明共享透明电极与隔离区域的公共电极连接,像素透明电极与隔离区域的公共电极连接,或共享透明电极、像素透明电极同时与隔离区域的公共电极连接;像素透明电极的电位被公共电极上的低电位拉低,因此该像素透明电极异常。
如像素透明电极对应的显示像素为亮点,则说明共享透明电极并未与公共电极连接,像素透明电极也未与公共电极连接;主像素透明电极以及次像素透明电极均未被公共电极上的低电位拉低,因此该像素透明电极正常。
这样即完成了本优选实施例的液晶显示面板的检测过程。
本发明的液晶显示面板的检测方法可以很好的在检测像素显示的同时,对阵列基板表面的ITO残留的不良进行检测。
本发明的阵列基板、液晶显示面板及液晶显示面板的检测方法通过在隔离区域设置一裸露的公共电极,可很好的检测由阵列基板表面的ITO残留导致的产品不良;解决了现有的阵列基板、液晶显示面板及液晶显示面板的检测方法无法检测阵列基板表面的ITO残留导致的产品不良的技术问题。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种阵列基板,其特征在于,包括:
基板衬底;
公共电极,设置在所述基板衬底上,用于提供公共信号;
绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;
像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及
共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;
其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
2.根据权利要求1所述的阵列基板,其特征在于,所述沟槽的长度约等于所述隔离区域的长度。
3.根据权利要求1所述的阵列基板,其特征在于,所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
4.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极;
所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
5.一种液晶显示面板,其特征在于,包括阵列基板、对盒基板以及设置在所述阵列基板和所述对盒基板之间的液晶层;其中所述阵列基板包括:
基板衬底;
公共电极,设置在所述基板衬底上,用于提供公共信号;
绝缘层,设置在所述公共电极上,用于隔离所述公共电极与共享电容透明电极;
像素透明电极,设置在所述绝缘层上,用于形成液晶电容;以及
共享电容透明电极,设置在所述绝缘层上,用于与所述公共电极形成电荷共享电容;
其中所述像素透明电极和所述共享电容透明电极之间具有一隔离区域,所述公共电极延伸至所述隔离区域,并通过所述绝缘层上的沟槽裸露在所述隔离区域的表面。
6.根据权利要求5所述的液晶显示面板,其特征在于,所述沟槽的长度约等于所述隔离区域的长度。
7.根据权利要求5所述的液晶显示面板,其特征在于,所述绝缘层上设置有多条用于裸露所述公共电极的沟槽。
8.根据权利要求5所述的液晶显示面板,其特征在于,所述阵列基板还包括数据线、主扫描线、次扫描线、第一晶体管、第二晶体管以及第三晶体管,所述像素透明电极包括主像素透明电极和次像素透明电极;
所述数据线分别与所述第一晶体管的源极和所述第二晶体管的源极连接,所述主像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接,所述次像素透明电极分别与所述第一晶体管的漏极和所述第二晶体管的漏极连接;所述主扫描线分别与所述第一晶体管的栅极和所述第二晶体管的栅极连接;所述次扫描线分别与所述第三晶体管的栅极连接,所述第三晶体管的源极与所述次像素透明电极连接,所述第三晶体管的漏极与所述共享电容透明电极连接。
9.一种权利要求8所述的液晶显示面板的检测方法,其特征在于,包括:
根据所述主扫描线上的扫描信号,通过所述数据线以及所述第一晶体管向所述主像素透明电极输入检测信号,通过所述数据线以及所述第二晶体管向所述次像素透明电极输入检测信号;
根据所述次扫描线上的扫描信号,通过所述次像素透明电极向所述共享电容透明电极输入检测信号;
通过公共线向公共电极输入公共信号;以及
如所述像素透明电极对应的显示像素为暗点,则所述像素透明电极异常;如所述像素透明电极对应的显示像素为亮点,则所述像素透明电极正常。
10.根据权利要求9所述的液晶显示面板的检测方法,其特征在于,如所述像素透明电极对应的显示像素为暗点,则所述共享透明电极与所述隔离区域的所述公共电极连接,和/或所述像素透明电极与所述隔离区域的所述公共电极连接。
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US20160180754A1 (en) | 2016-06-23 |
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CN104503158B (zh) | 2017-04-19 |
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