WO2016084783A1 - 電子部品の製造方法、電子部品および電子装置 - Google Patents

電子部品の製造方法、電子部品および電子装置 Download PDF

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Publication number
WO2016084783A1
WO2016084783A1 PCT/JP2015/082884 JP2015082884W WO2016084783A1 WO 2016084783 A1 WO2016084783 A1 WO 2016084783A1 JP 2015082884 W JP2015082884 W JP 2015082884W WO 2016084783 A1 WO2016084783 A1 WO 2016084783A1
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Prior art keywords
electrode
manufacturing
electronic component
thermistor
grinding
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PCT/JP2015/082884
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English (en)
French (fr)
Japanese (ja)
Inventor
圭 戸田
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株式会社村田製作所
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Priority to JP2016561884A priority Critical patent/JP6489128B2/ja
Publication of WO2016084783A1 publication Critical patent/WO2016084783A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00

Definitions

  • the present invention relates to an electronic component manufacturing method, an electronic component, and an electronic device.
  • Patent Document 1 Japanese Patent No. 5375963
  • This thermistor has a metal substrate, a thermistor layer formed directly on the metal substrate, and a pair of divided electrodes formed on the thermistor layer, and the thickness of the metal substrate is the thermistor layer Thicker than the thickness of.
  • the thickness of the metal substrate is thicker than the thickness of the thermistor layer. Therefore, if there is a difference in shrinkage between the metal substrate and the thermistor layer in the thermistor firing process, the thermistor warps. There is a risk. If the thermistor is warped, a thermistor conveyance failure occurs in a subsequent process facility (for example, a feeder section of a characteristic sorter). Therefore, the equipment operation rate and the yield are deteriorated, and the manufacturing cost is increased.
  • an object of the present invention is to provide an electronic component manufacturing method, an electronic component, and an electronic device that can suppress the occurrence of warpage of the electronic component.
  • a method for manufacturing an electronic component of the present invention includes: A fired body making process for making a fired body, wherein at least the first ceramic layer and the first electrode and the second electrode are laminated in the thickness direction and fired; And a grinding step of grinding a part of the fired body in the thickness direction.
  • the fired body being fired is thicker.
  • the occurrence of warpage is suppressed.
  • the thickness of the fired body is thin, the fired body during firing may be warped due to the aspect ratio of the fired body. Therefore, generation
  • a second ceramic layer is further laminated on the first ceramic layer so as to cover the first electrode and the second electrode, and the fired body is manufactured.
  • the grinding step at least a part of the second ceramic layer is ground so that the first electrode and the second electrode are exposed from the second ceramic layer.
  • the second ceramic layer is laminated on the first ceramic layer so as to cover the first electrode and the second electrode, and in the grinding step, the first ceramic layer is formed.
  • a portion of the second ceramic layer is ground so that the electrode and the second electrode are exposed from the second ceramic layer.
  • a reinforcing member can be attached to the side opposite to the electrode of the first ceramic layer to increase the strength of the fired body, and then the grinding process can be performed. Cracks of the fired body during the grinding process can be suppressed.
  • the electronic component manufacturing method of one embodiment includes a protection step of providing a first protection layer on the opposite side of the first ceramic layer from the electrode between the fired body manufacturing step and the grinding step.
  • the protective process is provided between the fired body manufacturing process and the grinding process, the first protective layer is provided on the opposite side of the first ceramic layer to the second ceramic layer. After the strength of the fired body is increased, the grinding process can be performed, and cracking of the fired body in the grinding process can be suppressed.
  • a part of the first ceramic layer is ground.
  • a part of the first ceramic layer is ground in the grinding step.
  • grinding is simplified.
  • the method for manufacturing an electronic component includes a protection step of providing a first protection layer on the side of the first ceramic layer opposite to the electrode after the grinding step.
  • the strength of the electronic component can be improved.
  • the first protective layer is provided on the side opposite to the electrode of the first ceramic layer, the strength of the electronic component can be improved.
  • the second protective layer is provided on the first ceramic layer, the second protective layer has a second protective layer between the first electrode and the second electrode, and the migration of the first electrode and the second electrode occurs. Can be suppressed.
  • the 2nd protective layer is provided on the 1st ceramic layer, when providing a plating layer in the 1st electrode and the 2nd electrode, the corrosion of the 1st ceramic layer by a plating layer can be prevented.
  • the second protective layer is provided on the second ceramic layer so as to cover the first electrode and the second electrode before the grinding step, so that the strength of the fired body is increased. Then, a grinding process can be performed and the crack of the sintered body in the grinding process can be suppressed. Moreover, since the first protective layer is provided on the side of the first ceramic layer opposite to the internal electrode, the strength of the electronic component can be improved. In addition, since the second protective layer is provided on the second ceramic layer, the second protective layer is provided between the first electrode and the second electrode, and migration of the first electrode and the second electrode occurs. Can be suppressed. In addition, since the second protective layer is provided on the second ceramic layer, when the plating layer is provided on the first electrode and the second electrode, erosion of the second ceramic layer by the plating layer can be prevented.
  • a method of manufacturing a plurality of electronic components In the fired body manufacturing step, a plurality of sets of the first electrode and the second electrode corresponding to a region of one electronic component are provided, After the grinding step, there is a cutting step of cutting the fired body for each region of one electronic component.
  • the grinding step there is a cutting step of cutting the fired body for each region of one electronic component, so by grinding the large-sized fired body before cutting, Productivity can be improved, and the load caused by grinding can be reduced to produce an electronic component that is not damaged.
  • the electronic component manufacturing method of one embodiment includes a protection step of providing a first protection layer on the opposite side of the first ceramic layer from the electrode between the fired body manufacturing step and the cutting step.
  • the first protective layer is provided on the side opposite to the electrode of the first ceramic layer between the fired body manufacturing step and the cutting step, It becomes easy to affix a 1st protective layer to a large sized sintered body.
  • the method of manufacturing the electronic component of the present invention includes A laminating step for producing a laminate comprising at least a ceramic layer; A firing step of firing the laminate to produce a fired body; A grinding step of grinding part of the fired body in the thickness direction; An electrode forming step of forming a first electrode and a second electrode on the first surface of the fired body.
  • the thickness of the laminate before the firing process is thick.
  • production of the curvature of this laminated body is suppressed.
  • the laminated body during firing may be warped due to the aspect ratio of the laminated body. Therefore, generation
  • the electronic component manufacturing method of one embodiment includes a protection step of providing a first protective layer on the opposite side of the fired body from the grinding side between the firing step and the grinding step.
  • the protective process is provided between the firing process and the grinding process, the first protective layer is provided on the opposite side of the fired body from the grinding side to increase the strength of the fired body. After strengthening, the grinding process can be performed, and cracking of the fired body in the grinding process can be suppressed.
  • the electronic component manufacturing method includes a protection step of providing a first protective layer on the grinding side of the fired body after the grinding step.
  • the strength of the electronic component can be improved.
  • a method of manufacturing a plurality of electronic components In the electrode forming step, a plurality of sets of the first electrode and the second electrode corresponding to a region of one electronic component are provided, After the electrode forming step, the method includes a cutting step of cutting the fired body into regions of one electronic component.
  • the grinding step can be performed before the cutting step.
  • the method for manufacturing an electronic component includes a protection step of providing a first protective layer on the opposite side of the fired body from the electrode between the firing step and the cutting step.
  • the first protective layer is provided on the side opposite to the electrode of the fired body between the firing process and the cutting process, the large-sized fired body before cutting. It becomes easy to affix a 1st protective layer.
  • the electronic component of the present invention is An element made of ceramic, A first electrode and a second electrode spaced apart from the first surface of the element body; A first protective layer disposed on a second surface opposite to the first surface of the element body, At least one of the first surface and the second surface of the element body has a ground surface.
  • the grinding surface refers to a surface having at least two grinding marks in a size of 0.1 mm ⁇ 0.1 mm and at least two grinding marks being substantially parallel.
  • At least one of the first surface and the second surface of the element body has a ground surface. For this reason, when manufacturing an electronic component, it is possible to increase the thickness of the element body and fire it, and then to grind the element body to a predetermined thickness. In this way, since the element body can be fired with a large thickness, generation of warpage of the element body during firing is suppressed. Therefore, the occurrence of warping of the element body is suppressed, and an electronic component without warping can be manufactured. For this reason, the trouble of conveyance of an electronic component is improved in the equipment of a post process (for example, the feeder part of a characteristic sorter, etc.), the equipment operation rate and the yield are improved, and the manufacturing cost is reduced.
  • a post process for example, the feeder part of a characteristic sorter, etc.
  • the first protective layer of the electronic component is positioned on the surface opposite to the mounting substrate (hereinafter referred to as a non-mounting surface). Therefore, since the non-mounting surface of the electronic component is the first protective layer, the insulation of the non-mounting surface of the electronic component can be ensured.
  • the weak element element can be reinforced with the first protection layer, and the strength of the electronic component can be improved.
  • the thickness of the electronic component is smaller than the length and width of the electronic component.
  • the electronic component of the embodiment since the thickness of the electronic component is smaller than the length and width of the electronic component, the electronic component can be reduced in height.
  • the electronic component includes a second protective layer in a region between the first electrode and the second electrode on the first surface of the element body.
  • the second protective layer is provided in the region between the first electrode and the second electrode on the first surface of the element body, migration of the first electrode and the second electrode is prevented. Can be suppressed.
  • the second protective layer is provided in the entire region except for the region overlapping the first electrode and the second electrode on the first surface of the element body.
  • the second protective layer is provided in the entire region except the region overlapping the first electrode and the second electrode on the first surface of the element body, the first electrode and the second electrode When a plating layer is provided on the electrode, erosion of the second surface of the element body due to the plating layer can be prevented.
  • the electronic component In one embodiment of the electronic device, The electronic component; And an insulating member that covers the electronic component.
  • the insulating member covers the electronic component, the strength and reliability of the electronic component can be ensured.
  • the electronic component manufacturing method, the electronic component, and the electronic apparatus of the present invention it is possible to suppress the occurrence of warpage of the electronic component.
  • FIG. 1A is a plan view showing a thermistor according to a first embodiment of the present invention.
  • FIG. 1B is a cross-sectional view of the thermistor.
  • a thermistor 1 as an example of an electronic component includes an element body 10, first and second electrodes 21 and 22 exposed from the surface of the element body 10, and a first of the element body 10.
  • the first protective layer 41 is provided on the opposite side of the second electrodes 21 and 22.
  • the element body 10 is composed of a plurality of ceramic layers, and the plurality of ceramic layers are integrally laminated.
  • the ceramic layer is made of, for example, ceramic having negative resistance temperature characteristics. That is, the thermistor 1 is an NTC (Negative Temperature Coefficient) thermistor, and the resistance value decreases as the temperature rises.
  • NTC Negative Temperature Coefficient
  • the ceramic for example, various materials containing appropriate amounts of Mn, Ni, Fe, Ti, Co, Al, Zn and the like in any combination can be used. Actually, the ceramic is mixed using an oxide of the transition metal element, but a carbonate, hydroxide or the like of the element may be used as a starting material.
  • the element body 10 has a length direction (L direction), a width direction (W direction), and a thickness direction (T direction). More specifically, the element body 10 is formed in a substantially rectangular parallelepiped shape.
  • the element body 10 has a first surface 10a and a second surface 10b located on the opposite side of the first surface 10a.
  • the first surface 10 a and the second surface 10 b are surfaces (LW surfaces) including the length direction and the width direction of the element body 10.
  • the first surface 10a of the element body 10 has a ground surface.
  • the grinding surface refers to a surface having at least two grinding marks in a size of 0.1 mm ⁇ 0.1 mm, and at least two grinding marks being substantially parallel. Note that all grinding marks need not be substantially parallel. Moreover, the width and depth of the grinding mark are not limited.
  • the first electrode 21 and the second electrode 22 are exposed from the first surface 10 a of the element body 10. Specifically, the first surface 10a of the element body 10 is provided with a recess, and the first and second electrodes 21 and 22 are disposed in the recess. The top surfaces of the first and second electrodes 21 and 22 in the T direction are flush with the first surface 10 a of the element body 10.
  • the first electrode 21 and the second electrode 22 are spaced apart from each other in the L direction.
  • the first and second electrodes 21 and 22 have a rectangular shape in plan view, but may have a shape other than a rectangle.
  • Examples of the material of the first and second electrodes 21 and 22 include noble metals such as Ag, Pd, Pt, and Au, or simple metals such as Cu, Ni, Al, W, and Ti, or alloys containing these simple substances. Can be used.
  • the first and second electrodes 21 and 22 are located on the inner side of the outline of the first surface 10a of the element body 10 in plan view. More specifically, in the plan view, the end faces of the first and second electrodes 21 and 22 in the L direction are located on the inner side of the end face of the element body 10 in the L direction. The end faces in the L direction of the first and second electrodes 21 and 22 may be arranged so as to coincide with the end faces in the L direction of the element body 10.
  • the first protective layer 41 is disposed on the second surface 10 b of the element body 10.
  • the first protective layer 41 is made of, for example, a resin.
  • the thickness T1 of the thermistor 1 corresponds to the length between the first surface 10a of the element body 10 and the lower surface of the first protective layer 41.
  • the thickness T1 of the thermistor 1 is smaller than the length and width of the thermistor 1.
  • the thickness T1 of the thermistor 1 is 30 ⁇ m or more and 100 ⁇ m or less, preferably 50 ⁇ m or more and 100 ⁇ m or less. Thereby, the thermistor 1 can be made low-profile.
  • the thickness of the thermistor 1 may be larger than 100 ⁇ m.
  • the size of the thermistor 1 is, for example, JIS standard 0603 size.
  • the JIS standard 0603 size is (0.6 ⁇ 0.03) mm (L direction) ⁇ (0.3 ⁇ 0.03) mm (W direction).
  • the size of the thermistor 1 may be other sizes such as JIS standard 1005 size and JIS standard 1608 size.
  • the operation of the thermistor 1 will be described.
  • the first electrode 21 is energized
  • the second electrode 22 is energized from the first electrode 21 through the element body 10.
  • the resistance of the element body 10 decreases and electricity flows more easily.
  • the first ceramic layer 11 and the first and second electrodes 21 and 22 are sequentially laminated in the thickness direction (T direction), and the first and second electrodes 21 and 22 are further formed.
  • the second ceramic layer 12 is laminated on the first ceramic layer 11 so as to cover it, and the laminated body 50 is produced. This is called a lamination process.
  • the laminated body 50 is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 1B) of the thermistor 1.
  • the target value is the thickness of the fired body 51 for realizing the final thickness T1 of the thermistor 1, and is a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1. is there.
  • Each of the first and second ceramic layers 11 and 12 may be composed of a plurality of laminated sheet bodies.
  • the laminated body 50 is fired to produce a fired body 51.
  • the first protective layer 41 is provided on the first ceramic layer 11 on the opposite side to the first and second electrodes 21 and 22. This is called a protection process.
  • the first protective layer 41 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11.
  • a part of the fired body 51 is ground in the thickness direction (T direction) so that the thickness of the fired body 51 becomes a target value.
  • This is called a grinding process.
  • part of the second ceramic layer 12 and part of the first and second electrodes 21 and 22 are ground so that the first and second electrodes 21 and 22 are exposed from the second ceramic layer 12.
  • the ground portion of the fired body 51 is indicated by hatching in the drawing.
  • the ground portion is ground along the thickness direction T using, for example, a grinding wheel. Note that the first and second electrodes 21 and 22 are exposed from the second ceramic layer 12 by grinding only a part of the second ceramic layer 12 without grinding part of the first and second electrodes 21 and 22. You may make it make it.
  • the upper surface (first surface 10a) of the element body 10 and the upper surfaces of the first and second electrodes 21 and 22 become the same surface, and the thermistor 1 is manufactured.
  • the first surface 10a of the element body 10 is a ground surface ground in the grinding process.
  • the laminated body 50 having a thickness larger than the target value corresponding to the thickness T1 of the thermistor 1 is produced, and then the laminated body 50 is fired to produce the fired body 51.
  • the thickness of the laminated body 50 is thick, generation
  • the thickness of the laminated body is thin, there is a possibility that the laminated body being fired may be warped. The reason is considered to be due to the aspect ratio of the laminate.
  • the thickness of the laminate is made larger than the target value corresponding to the thickness of the thermistor, thereby reducing the aspect ratio and reliably suppressing the occurrence of warpage of the laminate during firing. Yes. Therefore, generation
  • the post-process equipment for example, the feeder section of the characteristic sorter
  • the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the second ceramic layer 12 to increase the strength of the fired body 51. Therefore, the grinding process can be performed, and cracks of the fired body 51B in the grinding process can be suppressed.
  • the first surface 10a of the element body 10 has a ground surface. Therefore, when the thermistor 1 is manufactured, the element body 10 can be thickened and fired, and then the element body 10 can be ground to a predetermined thickness. Thus, since the element body 10 can be fired with a large thickness, the warpage of the element body 10 during firing is suppressed. Accordingly, the occurrence of warping of the element body 10 is suppressed, and the thermistor 1 without warping can be manufactured. For this reason, the conveyance failure of the thermistor 1 is improved in the post-process equipment (for example, the feeder section of the characteristic sorter), the equipment operation rate and the yield are improved, and the manufacturing cost is reduced.
  • the post-process equipment for example, the feeder section of the characteristic sorter
  • the first protective layer 41 of the thermistor 1 is positioned on the surface opposite to the mounting substrate (hereinafter referred to as a non-mounting surface). To do. Therefore, since the non-mounting surface of the thermistor 1 is the first protective layer 41, the insulation of the non-mounting surface of the thermistor 1 can be ensured.
  • the weak element body 10 can be reinforced by the first protection layer 41, and the thermistor 1 can be improved in strength.
  • FIG. 3 is a sectional view showing a thermistor according to the second embodiment of the present invention. Note that in the second embodiment, the same reference numerals as those in the first embodiment have the same configurations as those in the first embodiment, and a description thereof will be omitted.
  • the thermistor 1 ⁇ / b> A of the second embodiment differs from the thermistor 1 of the first embodiment (FIG. 1B) in the positions of the first and second electrodes 21 and 22.
  • the first and second electrodes 21 and 22 are disposed on the first surface 10 a of the element body 10. That is, the upper surfaces of the first and second electrodes 21 and 22 are located above the first surface 10a.
  • the second surface 10b of the element body 10 has a ground surface.
  • the thickness T1 of the thermistor 1A corresponds to the length between the upper surfaces of the first and second electrodes 21 and 22 and the lower surface of the first protective layer 41.
  • the first ceramic layer 11 and the first and second electrodes 21 and 22 are sequentially laminated to produce a laminated body 50A (lamination process).
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • the laminated body 50A is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 3) of the thermistor 1A.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1A.
  • the laminated body 50A is fired to produce a fired body 51A (firing step). Then, a part of the fired body 51A is ground so that the thickness of the fired body 51A becomes the target value (grinding step). That is, the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 is ground. The ground portion of the fired body 51A is indicated by hatching in the figure. In this way, as shown in FIG. 4C, a fired body 51A having a target thickness is produced.
  • the 1st protective layer 41 is provided in the opposite side to the 1st, 2nd electrodes 21 and 22 of the 1st ceramic layer 11 (protection process).
  • the first protective layer 41 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11. Thereby, the thermistor 1A is manufactured.
  • the second surface 10b of the element body 10 is a ground surface ground in the grinding process.
  • the method for manufacturing the thermistor 1A has the same effects as the method for manufacturing the thermistor 1 of the first embodiment.
  • the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 after the grinding step, the strength of the thermistor 1A can be improved.
  • the thermistor 1A has the same effect as the thermistor 1 of the first embodiment.
  • the fired body manufacturing process includes a stacking process and a firing process.
  • FIG. 5 is a sectional view showing a thermistor according to a third embodiment of the present invention. Note that in the third embodiment, the same reference numerals as those in the first embodiment have the same configurations as those in the first embodiment, and a description thereof will be omitted.
  • the thermistor 1 ⁇ / b> B of the third embodiment differs from the thermistor 1 of the first embodiment (FIG. 1B) in the positions of the first and second electrodes 21 and 22.
  • the first and second electrodes 21 and 22 are disposed on the first surface 10 a of the element body 10. That is, the upper surfaces of the first and second electrodes 21 and 22 are located above the first surface 10a.
  • the first surface 10a of the element body 10 has a ground surface.
  • the thickness T1 of the thermistor 1B corresponds to the length between the upper surfaces of the first and second electrodes 21 and 22 and the lower surface of the first protective layer 41.
  • a laminated body 50B composed of at least the first ceramic layer 11 is produced (lamination process).
  • the stacked body 50B is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermistor 1B.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermistor 1B.
  • the laminated body 50B is fired to produce a fired body 51B (firing step).
  • the 1st protective layer 41 is provided in the opposite side to the grinding side of the baking body 51B (protection process).
  • a part of the fired body 51B is ground so that the thickness of the fired body 51B becomes a target value (grinding step).
  • the ground portion of the fired body 51B is indicated by hatching in the drawing.
  • FIG. 6D a fired body 51B having a target thickness and provided with the first protective layer 41 is manufactured.
  • first and second electrodes 21 and 22 are formed on the first surface 51a of the fired body 51B (the first surface 10a of the element body 10) (electrode formation step), and FIG.
  • the thermistor 1B shown is produced.
  • the first surface 51a of the fired body 51B is a surface on the grinding side.
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • the method for manufacturing the thermistor 1B has the same effect as the method for manufacturing the thermistor 1 of the first embodiment. Moreover, since the 1st, 2nd electrodes 21 and 22 are formed after a grinding process, the damage to the 1st and 2nd electrodes 21 and 22 by grinding can be prevented.
  • the thermistor 1B has the same effect as the thermistor 1 of the first embodiment.
  • FIG. 7A to 7E are cross-sectional views illustrating a thermistor manufacturing method according to a fourth embodiment of the present invention.
  • symbol same as 3rd Embodiment is the same structure as 3rd Embodiment, the description is abbreviate
  • the first protective layer is provided before the grinding step, but in the thermistor manufacturing method of the sixth embodiment, the first protective layer is provided after the grinding step. Is provided.
  • a laminated body 50B composed of at least the first ceramic layer 11 is produced (lamination process).
  • the stacked body 50B is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermistor 1B.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermistor 1B.
  • the laminated body 50B is fired to produce a fired body 51B (firing step). Then, a part of the fired body 51B is ground so that the thickness of the fired body 51B becomes a target value (grinding step). The ground portion of the fired body 51B is indicated by hatching in the drawing. In this way, as shown in FIG. 7C, a fired body 51B having a target thickness is produced.
  • first and second electrodes 21 and 22 are formed on the first surface 51a of the fired body 51B (electrode formation process). At this time, the first surface 51a of the fired body 51B is a non-ground side surface.
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • the first protective layer 41 is provided on the second surface 51b of the fired body 51B (protection step).
  • the second surface 51b of the fired body 51B is a surface on the grinding side. That is, the second surface 10b of the element body 10 is a ground surface ground in the grinding process.
  • the protection process is after the grinding process, it may be positioned before or after the electrode formation process. Moreover, you may make it form the 1st, 2nd electrodes 21 and 22 before a grinding process. That is, the fired body 51B in which the first ceramic layer 11, the first electrode 21, and the second electrode 22 are laminated in the thickness direction and fired may be produced (fired body production process).
  • the fired body manufacturing process includes a stacking process and a firing process.
  • FIG. 8 is a sectional view showing a thermistor according to a fifth embodiment of the present invention. Note that in the fifth embodiment, the same reference numerals as those in the second embodiment have the same configurations as those in the second embodiment, and a description thereof will be omitted.
  • the thermistor 1C of the fifth embodiment is different from the thermistor 1A of the second embodiment (FIG. 3) in that it has a second protective layer.
  • the second protective layer 42 is provided in the entire region except the region overlapping the first and second electrodes 21 and 22 on the first surface 10 a of the element body 10.
  • the second protective layer 42 is made of resin, for example.
  • a plating layer 45 is provided on the first and second electrodes 21 and 22.
  • the plating layer 45 is made of, for example, Ni / Sn, Ni / Cu, or Cu.
  • the thickness T1 of the thermistor 1C corresponds to the length between the upper surface of the plating layer 45 and the lower surface of the first protective layer 41.
  • the plating layer 45 may be omitted.
  • the second surface 10b of the element body 10 has a ground surface.
  • the first ceramic layer 11 and the first and second electrodes 21 and 22 are sequentially laminated to produce a laminated body 50C (lamination process).
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • the laminated body 50C is formed so as to be thicker than a target value corresponding to the thickness T1 (see FIG. 8) of the thermistor 1C.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1C.
  • the laminated body 50C is fired to produce a fired body 51C (firing step). Then, a part of the fired body 51C is ground so that the thickness of the fired body 51C becomes the target value (grinding step). That is, the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 is ground. The ground portion of the fired body 51C is indicated by hatching in the figure. In this manner, as shown in FIG. 9C, a fired body 51C having a target thickness is produced.
  • the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22, and the first and second electrodes 21 and 22 are covered.
  • a second protective layer 42 is provided on the first ceramic layer 11 (protection step).
  • the first protective layer 41 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11.
  • the second protective layer 42 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11.
  • a part of the second protective layer 42 and one of the first and second electrodes 21 and 22 are exposed so that the first and second electrodes 21 and 22 are exposed from the second protective layer 42.
  • the part is ground (protective layer grinding process). This ground portion is indicated by hatching in the figure.
  • the first and second electrodes 21 and 22 are exposed from the second protective layer 42 by grinding only a part of the second protective layer 42 without grinding part of the first and second electrodes 21 and 22. You may make it make it.
  • FIG. 9F the first and second electrodes 21 and 22 are exposed from the second protective layer 42.
  • a plating layer 45 is provided on the upper surfaces of the first and second electrodes 21 and 22 to fabricate the thermistor 1C.
  • the plating layer 45 may be omitted.
  • the thermistor 1C has the same effect as the thermistor 1C of the second embodiment. Further, since the second protective layer 42 is provided in the entire region except the region overlapping the first and second electrodes 21 and 22 on the first surface 10a of the element body 10, the first and second electrodes 21 and 22 are provided. In the case where the plating layer 45 is provided, the erosion of the second surface 10b of the element body 10 by the plating layer 45 can be prevented. In addition, since the second protective layer 42 is provided in the region between the first electrode 21 and the second electrode 22 on the first surface 10a of the element body 10, the occurrence of migration of the first and second electrodes 21 and 22 is suppressed. it can.
  • the method for manufacturing the thermistor 1C has the same effect as the method for manufacturing the thermistor 1C of the second embodiment. Moreover, since the 1st protective layer 41 is provided in the 1st ceramic layer 11 on the opposite side to the 1st, 2nd electrodes 21 and 22, the intensity
  • first and second electrodes 21 and 22 may be formed after the firing step. That is, it is only necessary to produce a fired body 51C in which the first ceramic layer 11, the first electrode 21, and the second electrode 22 are laminated in the thickness direction and fired (fired body producing step).
  • the fired body manufacturing process includes a stacking process and a firing process.
  • the second protective layer 42 may be provided on the second ceramic layer 12 so as to cover the first electrode 21 and the second electrode 22 after the firing step and before the grinding step (upper protection step). ). Thereby, after increasing the strength of the fired body 51C, the grinding process can be performed, and cracks of the fired body 51C in the grinding process can be suppressed. Also in this case, the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the internal electrode 30 after the grinding step (lower protective step).
  • FIGSixth embodiment 10A to 10E are cross-sectional views illustrating a thermistor manufacturing method according to a sixth embodiment of the present invention.
  • symbol same as 1st Embodiment is the same structure as 1st Embodiment, the description is abbreviate
  • the thermistor manufacturing method of the first embodiment is a single thermistor manufacturing method, but the thermistor manufacturing method of the sixth embodiment is a method of manufacturing a plurality of thermistors.
  • the first ceramic layer 11 and the plurality of first and second electrodes 21 and 22 are sequentially stacked, and further, the first ceramic layer 11 is covered so as to cover the plurality of first and second electrodes 21 and 22.
  • the second ceramic layer 12 is laminated on the layer 11 to produce a laminated body 50D (lamination process). At this time, the first and second ceramic layers 11 and 12 are formed in a sheet shape.
  • a plurality of first and second electrodes 21 and 22 corresponding to the region of one thermistor 1 are provided and arranged in an array along the LW surface. One set of the first and second electrodes 21 and 22 corresponds to one thermistor 1.
  • the stacked body 50D is formed so as to be thicker than a target value corresponding to the thickness T1 (see FIG. 1B) of the thermistor 1.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1.
  • the laminated body 50D is fired to produce a fired body 51D (firing step).
  • the 1st protective layer 41 is provided in the 1st ceramic layer 11 on the opposite side to the 1st, 2nd electrodes 21 and 22 (protection process).
  • the first protective layer 41 is formed in a sheet shape.
  • the first protective layer 41 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11.
  • a part of the fired body 51D is ground so that the thickness of the fired body 51D becomes a target value (grinding step).
  • grinding step part of the second ceramic layer 12 and part of the first and second electrodes 21 and 22 are ground so that the first and second electrodes 21 and 22 are exposed from the second ceramic layer 12.
  • the ground portion of the fired body 51D is indicated by hatching in the drawing.
  • the fired body 51D having a target thickness is cut for each pair of first and second electrodes 21 and 22 (that is, for each region of one thermistor 1) ( Cutting step). That is, the plurality of sets of the first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portions are cut. Thereby, as shown to FIG. 10E, the several thermistor 1 is produced.
  • the plurality of sets of first and second electrodes 21 and 22 correspond to a plurality of thermistors 1.
  • the method for manufacturing the thermistor 1 has the same effects as the method for manufacturing the thermistor 1 of the first embodiment.
  • the aspect ratio of the laminate tends to increase (that is, the length L tends to be very large compared to the thickness T). Warpage is likely to occur in the laminated body. Therefore, in the present invention, by increasing the thickness of the sheet-like laminate 50D, the aspect ratio of the laminate 50D is reduced, and the occurrence of warpage of the laminate 50D during firing is suppressed.
  • disconnects the sintered body 51D for every 1st, 2nd electrodes 21 and 22 of a set after a grinding process productivity can be improved by grinding the large-sized sintered body 50D before a cutting
  • the thermistor 1 without damage can be manufactured while reducing the load caused by grinding.
  • the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 before the cutting step, the large-sized fired body 51D before the cutting has a first step. 1 It becomes easy to affix the protective layer 41.
  • (Seventh embodiment) 11A to 11E are cross-sectional views illustrating a method for manufacturing the thermistor according to the seventh embodiment of the present invention.
  • symbol same as 2nd Embodiment is the same structure as 2nd Embodiment, the description is abbreviate
  • the thermistor manufacturing method of the second embodiment (FIGS. 4A to 4D) is a single thermistor manufacturing method, but the thermistor manufacturing method of the seventh embodiment is a method of manufacturing a plurality of thermistors.
  • a first ceramic layer 11 and a plurality of first and second electrodes 21 and 22 are sequentially laminated to produce a laminated body 50E (lamination process).
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • the first ceramic layer 11 is formed in a sheet shape.
  • a plurality of first and second electrodes 21 and 22 corresponding to the region of one thermistor 1A are provided and arranged in an array along the LW surface.
  • the laminated body 50E is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 3) of the thermistor 1A.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1A.
  • the laminated body 50E is fired to produce a fired body 51E (firing step). Then, a part of the fired body 51E is ground so that the thickness of the fired body 51E becomes the target value (grinding step). In this grinding step, the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 is ground. The ground portion of the fired body 51E is indicated by hatching in the drawing. In this manner, as shown in FIG. 11C, a fired body 51E having a target thickness is produced.
  • the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 (protection step).
  • the first protective layer 41 is formed in a sheet shape.
  • the first protective layer 41 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11.
  • the fired body 51E provided with the first protective layer 41 is cut for each pair of first and second electrodes 21 and 22 (that is, for each region of one thermistor 1A) (cutting step). That is, the plurality of sets of the first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portions are cut. Thereby, as shown to FIG. 11E, several thermistors 1A are produced.
  • the method for manufacturing the thermistor 1A has the same effect as the method for manufacturing the thermistor 1A of the second embodiment.
  • the aspect ratio of the laminate 50E is reduced, and the occurrence of warpage of the laminate 50E during firing is suppressed.
  • productivity can be improved by grinding the large-sized sintered body 51E before a cutting
  • the thermistor 1A without damage can be manufactured while improving the load by grinding.
  • the large-sized fired body 51E before the cutting has a first step. 1 It becomes easy to affix the protective layer 41.
  • the first and second electrodes 21 and 22 may be formed after the firing step. That is, the fired body 51E in which the first ceramic layer 11, the first electrode 21, and the second electrode 22 are laminated in the thickness direction and fired may be produced (fired body producing step).
  • the fired body manufacturing process includes a stacking process and a firing process.
  • FIG. 12A to 12F are cross-sectional views illustrating a thermistor manufacturing method according to the eighth embodiment of the present invention. Note that in the eighth embodiment, the same reference numerals as those in the third embodiment have the same configurations as those in the third embodiment, and a description thereof will be omitted.
  • the thermistor manufacturing method of the third embodiment (FIGS. 6A to 6E) is a single thermistor manufacturing method, but the thermistor manufacturing method of the eighth embodiment is a method of manufacturing a plurality of thermistors.
  • a laminated body 50F made of the first ceramic layer 11 is produced (lamination process). At this time, the first ceramic layer 11 is formed in a sheet shape.
  • the laminated body 50F is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermistor 1B.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermistor 1B.
  • the laminated body 50F is fired to produce a fired body 51F (firing step).
  • the 1st protective layer 41 is provided in the opposite side to the grinding side of the baking body 51F (protection process).
  • the first protective layer 41 is formed in a sheet shape.
  • the first protective layer 41 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11.
  • a part of the fired body 51F is ground in the thickness direction (T direction) so that the thickness of the fired body 51F becomes a target value (grinding step).
  • the side opposite to the first protective layer 41 of the first ceramic layer 11 is ground.
  • the ground portion of the fired body 51F is indicated by hatching in the figure.
  • FIG. 12D a fired body 51F having a target thickness and provided with the first protective layer 41 is manufactured.
  • first and second electrodes 21 and 22 are formed on the first surface 51a of the fired body 51F (electrode forming step).
  • the first surface 51a of the fired body 51B is a surface on the grinding side.
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • a plurality of first and second electrodes 21 and 22 corresponding to the region of one thermistor 1B are provided and arranged in an array along the LW surface.
  • the fired body 51F is cut for each pair of the first and second electrodes 21 and 22 (that is, for each region of one thermistor 1B) (cutting step). That is, the plurality of sets of the first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portions are cut. Thereby, as shown to FIG. 12F, the several thermistor 1B is produced.
  • the method for manufacturing the thermistor 1B has the same effect as the method for manufacturing the thermistor 1B of the third embodiment.
  • the aspect ratio of the laminate 50F is reduced, and the occurrence of warpage of the laminate 50F during firing is suppressed.
  • disconnection can be improved by grinding the large-sized sintered body 50F before a cutting
  • the thermistor 1B can be manufactured without damage by reducing the load caused by grinding.
  • the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22 before the cutting step, the large-sized fired body 51F before the cutting has a first step. 1 It becomes easy to affix the protective layer 41.
  • (Ninth embodiment) 13A to 13F are cross-sectional views illustrating a method for manufacturing the thermistor according to the ninth embodiment of the present invention. Note that in the ninth embodiment, the same reference numerals as those in the fourth embodiment have the same configurations as those in the fourth embodiment, and a description thereof will be omitted.
  • the thermistor manufacturing method of the fourth embodiment (FIGS. 7A to 7E) is a single thermistor manufacturing method, but the thermistor manufacturing method of the ninth embodiment is a method of manufacturing a plurality of thermistors.
  • a laminated body 50G made of the first ceramic layer 11 is produced (lamination process). At this time, the first ceramic layer 11 is formed in a sheet shape.
  • the stacked body 50G is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 5) of the thermistor 1B.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 and the thicknesses of the first and second electrodes 21 and 22 from the thickness T1 of the thermistor 1B.
  • the laminated body 50G is fired to produce a fired body 51G (firing step). Then, a part of the fired body 51G is ground in the thickness direction (T direction) so that the thickness of the fired body 51G becomes the target value (grinding step). The ground portion of the fired body 51G is indicated by hatching in the figure. In this way, as shown in FIG. 13C, a fired body 51G having a target thickness is produced.
  • first and second electrodes 21 and 22 are formed on the first surface 51a of the fired body 51G (electrode forming step).
  • the first surface 51a of the fired body 51G is a non-ground side surface.
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • a plurality of first and second electrodes 21 and 22 corresponding to the region of one thermistor 1B are provided and arranged in an array along the LW surface.
  • the first protective layer 41 is provided on the second surface 51b of the fired body 51G (protection step).
  • the second surface 51b of the fired body 51G is a surface on the grinding side.
  • the first protective layer 41 is formed in a sheet shape.
  • the first protective layer 41 is made of, for example, a resin, and is cured after being attached to the fired body 51G.
  • the fired body 51G is cut for each pair of the first and second electrodes 21 and 22 (that is, for each region of one thermistor 1B) (cutting step). That is, the plurality of sets of the first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portions are cut. Thereby, as shown to FIG. 13F, the several thermistor 1B is produced.
  • the protection process is after the grinding process, it may be positioned before or after the electrode formation process. Moreover, you may make it form the 1st, 2nd electrodes 21 and 22 before a grinding process. That is, a fired body 51G in which the first ceramic layer 11, the first electrode 21, and the second electrode 22 are stacked in the thickness direction and fired may be produced (fired body production process).
  • the fired body manufacturing process includes a stacking process and a firing process.
  • the method for manufacturing the thermistor 1B has the same effect as the method for manufacturing the thermistor 1B of the fourth embodiment.
  • the aspect ratio of the laminate 50G is reduced, and the occurrence of warpage of the laminate 50G during firing is suppressed.
  • disconnects the sintered body 51G for every set of 1st, 2nd electrodes 21 and 22 after a grinding process productivity can be improved by grinding the large-sized sintered body 50G before a cutting
  • the thermistor 1B can be manufactured without damage by reducing the load caused by grinding.
  • it has the protection process which provides the 1st protective layer 41 on the opposite side to the 1st, 2nd electrodes 21 and 22 of the sintered body 51G before a cutting process it is 1st protection to the large-sized sintered body 51G before a cutting
  • (10th Embodiment) 14A to 14H are cross-sectional views illustrating a thermistor manufacturing method according to the tenth embodiment of the present invention. Note that in the tenth embodiment, the same reference numerals as those in the fifth embodiment have the same configurations as those in the fifth embodiment, and a description thereof will be omitted.
  • the thermistor manufacturing method of the fifth embodiment is a single thermistor manufacturing method, but the thermistor manufacturing method of the tenth embodiment is a method of manufacturing a plurality of thermistors.
  • a first ceramic layer 11 and a plurality of first and second electrodes 21 and 22 are sequentially laminated to produce a laminated body 50H (lamination process).
  • the first and second electrodes 21 and 22 are formed by sputtering or printing, for example.
  • the first ceramic layer 11 is formed in a sheet shape.
  • a plurality of first and second electrodes 21 and 22 corresponding to the region of one thermistor 1C are provided and arranged in an array along the LW surface.
  • the stacked body 50H is formed to be thicker than a target value corresponding to the thickness T1 (see FIG. 8) of the thermistor 1C.
  • the target value is a value obtained by subtracting the thickness of the first protective layer 41 from the thickness T1 of the thermistor 1C.
  • the laminated body 50H is fired to produce a fired body 51H (firing step). Then, a part of the fired body 51H is ground so that the thickness of the fired body 51H becomes a target value (grinding step). The side of the first ceramic layer 11 opposite to the first and second electrodes 21 and 22 is ground. The ground portion of the fired body 51H is indicated by hatching in the drawing. In this way, as shown in FIG. 14C, a fired body 51H having a target thickness is produced.
  • the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the first and second electrodes 21 and 22, and the first and second electrodes 21 and 22 are covered.
  • a second protective layer 42 is provided on the first ceramic layer 11 (protection step).
  • the first and second protective layers 41 and 42 are formed in a sheet shape.
  • the first protective layer 41 is made of, for example, a resin and is cured after being attached to the first ceramic layer 11.
  • the second protective layer 42 is made of, for example, a resin and is cured after being attached to the second ceramic layer 12.
  • a part of the second protective layer 42 and one of the first and second electrodes 21 and 22 are exposed so that the first and second electrodes 21 and 22 are exposed from the second protective layer 42.
  • the part is ground (protective layer grinding process). This ground portion is indicated by hatching in the figure.
  • FIG. 14F a fired body 51H in which the first and second electrodes 21 and 22 are exposed from the second protective layer 42 is produced.
  • the fired body 51H provided with the first and second protective layers 41 and 42 is set for each pair of the first and second electrodes 21 and 22 (that is, the region of one thermistor 1C). Every time) (cutting step). That is, the plurality of sets of the first and second electrodes 21 and 22 are adjacent to each other along the LW plane, and the adjacent portions are cut.
  • a plating layer 45 is provided on the upper surfaces of the first and second electrodes 21 and 22 to produce a plurality of thermistors 1C.
  • the plating layer 45 may be provided before the cutting step.
  • the method for manufacturing the thermistor 1C has the same effect as the method for manufacturing the thermistor 1C of the fifth embodiment.
  • the aspect ratio of the laminate 50H is reduced, and the occurrence of warpage of the laminate 50H during firing is suppressed.
  • productivity can be improved by grinding the large-sized sintered body 51H before a cutting
  • the thermistor 1C without damage can be produced while improving the load due to grinding.
  • the first and second protective layers 41 and 42 are provided before the cutting step, the first and second protective layers 41 and 42 can be easily attached to the large-sized fired body 51H before cutting.
  • first and second electrodes 21 and 22 may be formed after the firing step. That is, a fired body 51H in which the first ceramic layer 11, the first electrode 21, and the second electrode 22 are laminated in the thickness direction and fired may be produced (fired body production process).
  • the fired body manufacturing process includes a stacking process and a firing process.
  • the second protective layer 42 may be provided on the second ceramic layer 12 so as to cover the first electrode 21 and the second electrode 22 after the firing step and before the grinding step (upper protection step). ). Thereby, after increasing the strength of the fired body 51H, the grinding process can be performed, and cracks of the fired body 51H in the grinding process can be suppressed. Also in this case, the first protective layer 41 is provided on the opposite side of the first ceramic layer 11 from the internal electrode 30 after the grinding step (lower protective step).
  • FIG. 15A is a perspective view showing an electronic device including the thermistor of the present invention.
  • FIG. 15B is a cross-sectional view taken along the line AA in FIG. 15A. Note that in the eleventh embodiment, the same reference numerals as those in the first embodiment have the same configurations as those in the first embodiment, and a description thereof will be omitted.
  • the electronic device is a thermistor sensor 100.
  • the thermistor sensor 100 includes the thermistor 1 of the first embodiment and an insulating member 128 that covers the thermistor 1.
  • the thermistor 1 is arranged so that the first and second electrodes 21 and 22 face downward.
  • the thermistor of the first embodiment is used as the thermistor, any thermistor of the second to fifth embodiments may be used.
  • an Sn plating layer 124a, a Ni plating layer 124b, and a Cu plating layer 124c are formed in this order on the lower surfaces of the first and second electrodes 21 and 22 of the thermistor 1 as mounting electrodes, respectively. Further, a Cu foil 126 is formed on the lower surface of the Cu plating layer 124c.
  • the insulating member 128 covers the Sn plating layer 124a, the Ni plating layer 124b, and the Cu plating layer 124c together with the thermistor 1.
  • the insulating member 128 is made of an insulative resin material that is made of, for example, epoxy resin and does not have flexibility.
  • the thermistor sensor 100 includes a strip-like flexible insulating resin sheet 130 made of, for example, polyimide resin.
  • a strip-like flexible insulating resin sheet 130 made of, for example, polyimide resin.
  • two linear flexible lead wires 132 made of, for example, Cu foil are formed at an interval in the width direction of the insulating resin sheet 130.
  • An intermediate portion in the longitudinal direction of the insulating resin sheet 130 and an intermediate portion in the longitudinal direction of the two lead wires 132 are covered with a flexible insulating resin material 134 made of, for example, polyimide resin.
  • Each of the first and second electrodes 21 and 22 of the thermistor 1 includes the Sn plating layer 124a, the Ni plating layer 124b, the Cu plating layer 124c, the Cu foil 126, and the conductive connecting material 140, and the lead wire 132. One end is electrically connected.
  • the conductive connecting material 140 is, for example, solder, and is disposed at one end of the lead wire 132.
  • the periphery of the Cu foil 126, the lead wire 132, and the conductive connecting material 140 is covered with an insulative resin material 142 made of, for example, epoxy resin and having no flexibility.
  • the thermistor 1 is bonded to the insulating resin sheet 130 via the insulating resin material 142.
  • the insulating member 128 covers the thermistor 1, the strength and reliability of the thermistor 1 can be ensured.
  • the present invention is not limited to the above-described embodiment, and the design can be changed without departing from the gist of the present invention.
  • the feature points of the first to eleventh embodiments may be variously combined.
  • the thermistor is an NTC thermistor, but may be a PTC (Positive Temperature Coefficient) thermistor.
  • the second protective layer is provided in the entire region except for the regions overlapping the first and second electrodes on the first surface of the element body. It may be provided only in the region between the two electrodes, and migration of the first and second electrodes can be suppressed.
  • the thermistor is used as the electronic component, but it may be a coil, a capacitor, or the like.
  • the electronic device is a thermistor sensor (a so-called film-type thermistor sensor) in which a thermistor is provided on a flexible insulating resin sheet, but may be another thermistor sensor, or The thermistor may be another electronic device covered with an insulating member.
  • a thermistor sensor a so-called film-type thermistor sensor
  • the thermistor may be another electronic device covered with an insulating member.
  • no electrode is provided in the element body.
  • an internal electrode may be provided in the element body so that the internal electrode is electrically connected to the first and second electrodes through the element body.
  • the ground surface is provided on the first surface or the second surface of the element body, but the ground surface may be provided on the first surface and the second surface of the element body.
  • the first protective layer is provided, but the first protective layer may be omitted.
PCT/JP2015/082884 2014-11-26 2015-11-24 電子部品の製造方法、電子部品および電子装置 WO2016084783A1 (ja)

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WO2022034821A1 (ja) * 2020-08-12 2022-02-17 株式会社村田製作所 高周波モジュール及び通信装置

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KR102364134B1 (ko) 2017-06-14 2022-02-18 바이엘 악티엔게젤샤프트 디아자비시클릭 치환된 이미다조피리미딘 및 호흡 장애의 치료를 위한 그의 용도
WO2022034821A1 (ja) * 2020-08-12 2022-02-17 株式会社村田製作所 高周波モジュール及び通信装置

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