WO2016060455A3 - 박막 트랜지스터 제조 방법 및 박막 트랜지스터 - Google Patents

박막 트랜지스터 제조 방법 및 박막 트랜지스터 Download PDF

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Publication number
WO2016060455A3
WO2016060455A3 PCT/KR2015/010811 KR2015010811W WO2016060455A3 WO 2016060455 A3 WO2016060455 A3 WO 2016060455A3 KR 2015010811 W KR2015010811 W KR 2015010811W WO 2016060455 A3 WO2016060455 A3 WO 2016060455A3
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WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
layer
manufacturing
wiring layer
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PCT/KR2015/010811
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English (en)
French (fr)
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WO2016060455A2 (ko
Inventor
서종현
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한국항공대학교산학협력단
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Priority to CN201580053009.1A priority Critical patent/CN107112363B/zh
Priority to US15/518,927 priority patent/US10340294B2/en
Publication of WO2016060455A2 publication Critical patent/WO2016060455A2/ko
Publication of WO2016060455A3 publication Critical patent/WO2016060455A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)

Abstract

박막 트랜지스터 제조 방법이 개시되며, 상기 박막 트랜지스터 제조 방법은 기판 상에 패터닝된 반도체층 및 배선층을 형성하는 단계; 및 상기 배선층을 에칭하여 채널부를 형성하는 단계를 포함하되, 상기 배선층은, 보상층을 포함하고, 상기 보상층을 이루는 물질은, 상기 반도체층을 이루는 물질의 성분 중 금속 산화물인 성분의 금속을 포함한다.
PCT/KR2015/010811 2014-10-14 2015-10-14 박막 트랜지스터 제조 방법 및 박막 트랜지스터 WO2016060455A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201580053009.1A CN107112363B (zh) 2014-10-14 2015-10-14 薄膜电晶体制造方法及薄膜电晶体
US15/518,927 US10340294B2 (en) 2014-10-14 2015-10-14 Method for manufacturing thin film transistor, and thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020140138158A KR101624695B1 (ko) 2014-10-14 2014-10-14 박막 트랜지스터 제조 방법 및 박막 트랜지스터
KR10-2014-0138158 2014-10-14

Publications (2)

Publication Number Publication Date
WO2016060455A2 WO2016060455A2 (ko) 2016-04-21
WO2016060455A3 true WO2016060455A3 (ko) 2017-04-27

Family

ID=55747515

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Application Number Title Priority Date Filing Date
PCT/KR2015/010811 WO2016060455A2 (ko) 2014-10-14 2015-10-14 박막 트랜지스터 제조 방법 및 박막 트랜지스터

Country Status (5)

Country Link
US (1) US10340294B2 (ko)
KR (1) KR101624695B1 (ko)
CN (1) CN107112363B (ko)
TW (1) TWI611483B (ko)
WO (1) WO2016060455A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102160278B1 (ko) * 2016-09-23 2020-09-25 한국항공대학교산학협력단 박막 트랜지스터 및 그 제조 방법
KR102058648B1 (ko) 2018-03-12 2019-12-23 한국항공대학교산학협력단 박막 트랜지스터의 제조 방법 및 박막 트랜지스터
KR102198765B1 (ko) 2019-01-29 2021-01-05 한국과학기술원 이종접합 구조의 수직형 트랜지스터 및 그 제조 방법
CN110085520B (zh) * 2019-05-09 2020-12-08 深圳市华星光电技术有限公司 薄膜电晶体及其制作方法
KR102642227B1 (ko) 2021-06-21 2024-02-28 고려대학교 산학협력단 베타-산화갈륨 트랜지스터의 안정성 개선 방법

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KR20090117543A (ko) * 2008-05-09 2009-11-12 주성엔지니어링(주) 박막 트랜지스터 및 이의 제조 방법
KR20100120939A (ko) * 2009-05-07 2010-11-17 국민대학교산학협력단 자외선을 이용한 박막트랜지스터의 제조 방법
JP2011014761A (ja) * 2009-07-03 2011-01-20 Fujifilm Corp ボトムゲート構造の薄膜トランジスタの製造方法
KR20120096879A (ko) * 2008-07-31 2012-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법

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EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
TWI491048B (zh) * 2008-07-31 2015-07-01 Semiconductor Energy Lab 半導體裝置
US8436350B2 (en) * 2009-01-30 2013-05-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device using an oxide semiconductor with a plurality of metal clusters
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KR20090117543A (ko) * 2008-05-09 2009-11-12 주성엔지니어링(주) 박막 트랜지스터 및 이의 제조 방법
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Also Published As

Publication number Publication date
TW201626465A (zh) 2016-07-16
KR101624695B1 (ko) 2016-05-26
US10340294B2 (en) 2019-07-02
TWI611483B (zh) 2018-01-11
US20170243891A1 (en) 2017-08-24
WO2016060455A2 (ko) 2016-04-21
CN107112363A (zh) 2017-08-29
CN107112363B (zh) 2021-04-06
KR20160043692A (ko) 2016-04-22

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