WO2016059702A1 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

Info

Publication number
WO2016059702A1
WO2016059702A1 PCT/JP2014/077545 JP2014077545W WO2016059702A1 WO 2016059702 A1 WO2016059702 A1 WO 2016059702A1 JP 2014077545 W JP2014077545 W JP 2014077545W WO 2016059702 A1 WO2016059702 A1 WO 2016059702A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit board
semiconductor element
semiconductor
rectangular parallelepiped
connector
Prior art date
Application number
PCT/JP2014/077545
Other languages
English (en)
French (fr)
Inventor
康亮 池田
雄司 森永
理 松嵜
Original Assignee
新電元工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to PCT/JP2014/077545 priority Critical patent/WO2016059702A1/ja
Priority to US14/786,295 priority patent/US9704828B2/en
Priority to CN201480022408.7A priority patent/CN105723508B/zh
Priority to EP14889184.9A priority patent/EP3208838B1/en
Priority to JP2015522811A priority patent/JP5950488B1/ja
Publication of WO2016059702A1 publication Critical patent/WO2016059702A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32141—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged on opposite sides of a substrate, e.g. mirror arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/3754—Coating
    • H01L2224/37599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/8485—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06506—Wire or wire-like electrical connections between devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06589—Thermal management, e.g. cooling

Definitions

  • the present invention relates to a semiconductor module.
  • Patent Documents 1 to 4 Semiconductor modules having a plurality of semiconductor elements are known (for example, Patent Documents 1 to 4).
  • a semiconductor module it is required to integrate a plurality of semiconductor elements at high density.
  • a structure in which a plurality of semiconductor elements are stacked via connectors is considered.
  • a plurality of semiconductor elements are arranged adjacent to each other in the stacking direction via the connector, so that part of the heat released from each semiconductor element is adjacent to the other via the connector. Flows into the semiconductor element. Therefore, each semiconductor element is heated by the heat released from the other semiconductor elements, and there is a problem in terms of heat dissipation.
  • an object of this invention is to provide the semiconductor module which can thermally radiate the heat
  • a semiconductor module includes a first circuit board having thermal conductivity, a second circuit board having thermal conductivity disposed opposite to the first circuit board, Bonded to the first semiconductor element bonded to the facing surface of the first circuit board facing the second circuit board, and to the facing surface of the second circuit board facing the first circuit board.
  • a portion sandwiched between one semiconductor element and the second circuit board is in contact with the first semiconductor element and the second circuit board.
  • the connector has a portion that is sandwiched between the first semiconductor element and the second circuit board without passing through the second semiconductor element. Therefore, at least a part of the heat of the first semiconductor element is directly transmitted to the second circuit board without passing through the second semiconductor element. Thereby, the heat of the first semiconductor element can be efficiently radiated from both the first circuit board and the second circuit board. In addition, since heat flowing from the first semiconductor element into the second semiconductor element is reduced, it is possible to suppress the second semiconductor element from being heated by the heat released from the first semiconductor element. Therefore, according to the present invention, a semiconductor module with high heat dissipation can be provided.
  • a semiconductor module 1A according to the first embodiment includes a first circuit board 2, a second circuit board 3 disposed to face the first circuit board 2, and a first circuit board 2.
  • the first semiconductor element 4 bonded to the circuit board 2, the second semiconductor element 5 bonded to the second circuit board 3, and the first semiconductor element 4 and the second semiconductor element 5 are mutually connected.
  • a connector 6 for electrical connection is provided.
  • the first circuit board 2 and the second circuit board 3 of the present embodiment are, for example, ceramic substrates having thermal conductivity, and plate-shaped ceramic plates 21 and 31 having insulation properties, and ceramic plates 21 and 31, respectively. And conductive layers 22 and 32 provided on the main surface of 31.
  • the first circuit board 2 and the second circuit board 3 are provided with conductive layers 22 and 32 on both main surfaces of the ceramic plates 21 and 31.
  • the conductive layers 22 and 32 may be conductive, but are preferably made of a material having high electrical conductivity such as copper.
  • the first circuit board 2 and the second circuit board 3 are arranged so that one of the conductive layers 22A and 32A (hereinafter referred to as the first conductive layers 22A and 32A) faces each other. 31 are arranged at intervals in the thickness direction.
  • the first conductive layers 22A and 32A of the first circuit board 2 and the second circuit board 3 constitute a circuit of the semiconductor module 1A together with the first semiconductor element 4, the second semiconductor element 5 and the connector 6. It is formed as a wiring pattern.
  • the first semiconductor element 4 is bonded to the first conductive layer 22A of the first circuit board 2, and the second semiconductor element 5 is bonded to the first conductive layer 32A of the second circuit board 3.
  • a conductive adhesive such as solder
  • One main surface of the semiconductor element 5 is joined to the first conductive layer 32A of the second circuit board 3 by a conductive adhesive (not shown) such as solder.
  • the first semiconductor element 4 is electrically connected to the first conductive layer 22A of the first circuit board 2
  • the second semiconductor element 5 is electrically connected to the first conductive layer 32A of the second circuit board 3. It is connected.
  • the electrode of the first semiconductor element 4 bonded to the first circuit board 2 and the electrode of the second semiconductor element 5 bonded to the second circuit board 3 are different from each other. It is configured.
  • the first semiconductor element 4 and the second semiconductor element 5 joined as described above are arrows in a direction (FIG. 1A) orthogonal to the facing surface of the first circuit board 2 facing the second circuit board 3. They are arranged at positions that do not overlap each other when viewed from the direction A (hereinafter referred to as a circuit board orthogonal direction A).
  • the direction in which the first semiconductor elements 4 and the second semiconductor elements 5 are arranged is the first circuit board surface direction.
  • the direction orthogonal to the circuit board orthogonal direction A and the first circuit board surface direction B (the direction of the arrow C in FIG. 1B) will be described as the second circuit board surface direction C.
  • the connector 6 is made of, for example, a conductive material such as copper, and plays a role of electrically connecting the first semiconductor element 4 and the second semiconductor element 5.
  • the connector 6 is joined to the first semiconductor element 4 and the second semiconductor element 5, and also to the first conductive layers 22 ⁇ / b> A and 32 ⁇ / b> A of the first circuit board 2 and the second circuit board 3. It is joined.
  • the connector 6 of the present embodiment includes a first element junction 61 that is joined to the first semiconductor element 4, a second element junction 62 that is joined to the second semiconductor element 5, And a connection portion 63 for connecting the one element junction portion 61 and the second element junction portion 62. These are arranged in the order of the first element bonding portion 61, the connecting portion 63, and the second element bonding portion 62 from one side to the other side in the first circuit board surface direction B, and are integrally formed.
  • the first element joint portion 61 is formed in a substantially rectangular parallelepiped shape whose surface faces the circuit board orthogonal direction A, the first circuit board surface direction B, and the second circuit board surface direction C.
  • the first element junction 61 is arranged so as to overlap with the first semiconductor element 4 in the circuit board orthogonal direction A and not overlap with the second semiconductor element 5.
  • the end surface on the first semiconductor element 4 side is bonded to the main surface of the first semiconductor element 4 by a conductive adhesive (not shown) such as solder, and the second circuit.
  • the end face on the substrate 3 side is joined to the first conductive layer 32A of the second circuit board 3 by a conductive adhesive (not shown) such as solder. That is, the first element junction 61 is sandwiched between the first semiconductor element 4 and the second circuit board 3 without the second semiconductor element 5 interposed therebetween.
  • the first element joint 61 of the connector 6 and the second semiconductor element 5 are both joined to the first conductive layer 32A of the second circuit board 3, but the first of the second circuit board 3 In the conductive layer 32A, the region where the first element junction 61 of the connector 6 is joined and the region where the second semiconductor element 5 is joined are electrically independent.
  • the second element joint portion 62 is formed in a substantially rectangular parallelepiped shape whose surfaces face the circuit board orthogonal direction A, the first circuit board surface direction B, and the second circuit board surface direction C, respectively.
  • These are arranged in order of the first rectangular parallelepiped portion 62a, the connecting portion 62c, and the second rectangular parallelepiped portion 62d from one side to the other side in the first circuit board surface direction B, and are integrally formed.
  • the first rectangular parallelepiped portion 62a, the second rectangular parallelepiped portion 62b, and the connecting portion 62c are formed so that the dimensions in the second circuit board surface direction C are substantially the same.
  • the dimension of the element junction 61 is set to be smaller than the dimension in the second circuit board surface direction C.
  • connection part 62c of the 1st rectangular parallelepiped part 62a and the end surface by the side of the 1st rectangular parallelepiped part 62a of the connection part 62c are connected, and the end face by the side of the 1st circuit board 2 of the connection part 62c A part of the end face of the second rectangular parallelepiped portion 62b on the second circuit board 3 side is connected.
  • the connecting part 62c is formed with a dimension in the first circuit board surface direction B smaller than that of the second rectangular parallelepiped part 62b.
  • the second element joint portion 62 is arranged so as to overlap the second semiconductor element 5 in the circuit board orthogonal direction A and not overlap with the first semiconductor element 4.
  • the end surface on the second semiconductor element 5 side is joined to the main surface of the second semiconductor element 5 by a conductive adhesive (not shown) such as solder, and the first circuit board.
  • the end surface on the 2 side is separated from the first circuit board 2.
  • the end face on the first circuit board 2 side is joined to the first conductive layer 22A of the first circuit board 2 by a conductive adhesive (not shown) such as solder,
  • the end face on the second circuit board 3 side is separated from the second circuit board 3.
  • the connecting portion 62 c is not bonded to the bonded first circuit board 2, second circuit board 3, first semiconductor element 4, and second semiconductor element 5.
  • the second element junction 62 having the first rectangular parallelepiped part 62a, the second rectangular parallelepiped part 62b, and the connecting part 62c is connected to the second semiconductor element 5 without the first semiconductor element 4 interposed therebetween. It is sandwiched between the first circuit board 2.
  • the second element joint portion 62 of the connector 6 and the first semiconductor element 4 are both joined to the first conductive layer 22A of the first circuit board 2, but the first of the first circuit board 2 In the conductive layer 22A, the region where the second element junction 62 of the connector 6 is joined and the region where the first semiconductor element 4 is joined are electrically independent.
  • connection portion 63 is formed in a substantially rectangular parallelepiped shape whose surface faces the circuit board orthogonal direction A, the first circuit board surface direction B, and the second circuit board surface direction C, and the first element joint portion 61 and the second circuit board surface direction B are formed. It arrange
  • the connection portion 63 is not joined to the first circuit board 2, the second circuit board 3, the first semiconductor element 4, and the second semiconductor element 5.
  • the connector 6 may be joined to an external connection lead (not shown).
  • the connector 6 may be provided with an external connection portion 64 that is joined to the external connection lead.
  • the external connection portion 64 shown in FIG. 2 is formed in a shape extending from the first element joint portion 61 in a direction away from the connection portion 63 in the first circuit board surface direction B.
  • the semiconductor module 1A of the present embodiment may include, for example, a connection terminal (not shown) for connecting the circuit of the semiconductor module 1A to the outside.
  • the connection terminal may be bonded to, for example, the first semiconductor element 4, the second semiconductor element 5, and the first conductive layers 22A and 32A.
  • the heat generated in the first semiconductor element 4 due to energization is transmitted to the first circuit board 2 and the first element joint portion of the connector 6 It is transmitted to the second circuit board 3 via 61.
  • heat generated in the second semiconductor element 5 is transmitted to the second circuit board 3 and also transmitted to the first circuit board 2 via the second element joint portion 62 of the connector 6.
  • the heat of the first semiconductor element 4 and the second semiconductor element 5 transmitted to the first circuit board 2 and the second circuit board 3 can be released to the outside of the semiconductor module 1A.
  • a heat sink is brought into contact with the other conductive layers 22 and 32 located on the opposite side of the first conductive layers 22A and 32A in the first circuit board 2 and the second circuit board 3, so that the heat described above is transferred to the semiconductor. It can be efficiently discharged outside the module 1A.
  • the semiconductor module 1A according to the first embodiment the first semiconductor element 4 and the second semiconductor element 5 are arranged at positions that do not overlap each other in the circuit board orthogonal direction A, and the connector 6 is the second semiconductor.
  • the first element junction 61 is sandwiched between the first semiconductor element 4 and the second circuit board 3 without the element 5 interposed therebetween. Thereby, the heat of the first semiconductor element 4 can be directly transferred to the second circuit board 3 without passing through the second semiconductor element 5.
  • the connector 6 since the connector 6 has the second element joint portion 62 sandwiched between the second semiconductor element 5 and the first circuit board 2 without the first semiconductor element 4 interposed, The heat of the semiconductor element 5 can be directly transferred to the first circuit board 2 without going through the first semiconductor element 4. For this reason, the heat of the first semiconductor element 4 and the second semiconductor element 5 can be efficiently radiated from both the first circuit board 2 and the second circuit board 3.
  • a part of the first semiconductor element 4 and a part of the second semiconductor element 5 are superimposed in the circuit board orthogonal direction A.
  • the area where the first semiconductor element 4 and the second semiconductor element 5 overlap when viewed from the circuit board orthogonal direction A is preferably, for example, 1/3 to 1/2 of the area of the first semiconductor element 4. .
  • the connector 7 includes a first element joint 71 joined to the first semiconductor element 4, a second element joint 72 joined to the second semiconductor element 5, and have.
  • the first element joint portion 71 and the second element joint portion 72 are integrally formed.
  • the first element joint portion 71 is a first rectangular parallelepiped portion formed in a substantially rectangular parallelepiped shape whose surfaces face the circuit board orthogonal direction A, the first circuit board surface direction B, and the second circuit board surface direction C, respectively.
  • 71a and a second rectangular parallelepiped portion 71b are arranged in the order of the first rectangular parallelepiped portion 71a and the second rectangular parallelepiped portion 71b from the first circuit board 2 side to the second circuit board 3 side in the circuit board orthogonal direction A, and are integrally formed.
  • the first rectangular parallelepiped portion 71a and the second rectangular parallelepiped portion 71b are formed so that the dimensions in the second circuit board surface direction C are substantially the same.
  • the first rectangular parallelepiped portion 71a is formed to have a larger dimension in the first circuit board surface direction B than the second rectangular parallelepiped portion 71b.
  • the end surface on the first semiconductor element 4 side is joined to the main surface of the first semiconductor element 4 by a conductive adhesive (not shown) such as solder, and the second circuit board.
  • the end face on the 3 side is partly joined to the second rectangular parallelepiped part 71b, the other part is joined to the second element joint part 72, and the other parts are not joined. It is separated from the second circuit board 3 and the second semiconductor element 5.
  • the end surface on the second circuit board 3 side is joined to the first conductive layer 32A of the second circuit board 3 by a conductive adhesive (not shown) such as solder,
  • a conductive adhesive such as solder
  • the first element joint portion 71 having the first rectangular parallelepiped portion 71a and the second rectangular parallelepiped portion 71b is not connected to the second semiconductor element 5 and the first semiconductor element 4 and the second circuit. It is sandwiched between the substrate 3.
  • the first element joint 71 and the second semiconductor element 5 of the connector 7 are both joined to the first conductive layer 32 ⁇ / b> A of the second circuit board 3.
  • the region where the first element junction 71 of the connector 7 is joined and the region where the second semiconductor element 5 is joined are electrically independent.
  • the 2nd element junction part 72 is the 1st rectangular parallelepiped part formed in the substantially rectangular parallelepiped shape in which the surface faces the circuit board orthogonal direction A, the 1st circuit board surface direction B, and the 2nd circuit board surface direction C, respectively.
  • These are arranged in order of the first rectangular parallelepiped portion 72a, the connecting portion 72c, and the second rectangular parallelepiped portion 72b from one side to the other side in the first circuit board surface direction B, and are integrally formed.
  • the first rectangular parallelepiped portion 72a, the second rectangular parallelepiped portion 72b, and the connecting portion 72c are formed such that the dimensions in the second circuit board surface direction C are substantially the same. This dimension is set to be smaller than the dimension of the first element bonding portion 61 in the second circuit board surface direction C.
  • connection part 72c And the end surface by the side of the 1st rectangular parallelepiped part 72a of the connection part 72c and the end surface by the side of the 1st rectangular parallelepiped part 72a of the connection part 72c are connected, and the end surface by the side of the 1st circuit board 2 of the connection part 72c A part of the end face on the second circuit board 3 side of the second rectangular parallelepiped portion 72b is connected.
  • the connecting portion 72c is formed with a dimension in the first circuit board surface direction B smaller than that of the second rectangular parallelepiped portion 72b.
  • the end surface on the second semiconductor element 5 side is joined to the main surface of the second semiconductor element 5 by a conductive adhesive (not shown) such as solder, and the first circuit board.
  • the end surface on the 2 side is separated from the first circuit board 2.
  • the end face of the second rectangular parallelepiped portion 72b on the first circuit board 2 side is joined to the first conductive layer 22A of the first circuit board 2 by a conductive adhesive (not shown) such as solder,
  • the end face on the second circuit board 3 side is separated from the second circuit board 3.
  • the connecting portion 72 c is not joined to the first circuit board 2, the second circuit board 3, the first semiconductor element 4, and the second semiconductor element 5.
  • the second element joint portion 72 having the first rectangular parallelepiped portion 72a, the second rectangular parallelepiped portion 72b, and the connecting portion 72c is connected to the second semiconductor element 5 without the first semiconductor element 4 interposed therebetween. It is sandwiched between the first circuit board 2.
  • the second element joint portion 72 of the connector 7 and the first semiconductor element 4 are both joined to the first conductive layer 22A of the first circuit board 2, but the first of the first circuit board 2 In the conductive layer 22A, the region where the second element junction 72 of the connector 7 is joined and the region where the first semiconductor element 4 is joined are electrically independent.
  • Such a connector 7 includes the first rectangular parallelepiped portion 71a and the first rectangular parallelepiped portion 71a of the first element joint portion 71 in the portion where the first semiconductor element 4 and the second semiconductor element 5 overlap in the circuit board orthogonal direction A.
  • the first rectangular parallelepiped portion 72a of the second element joint portion 72 is connected.
  • the heat generated in the first semiconductor element 4 is transmitted to the first circuit board 2 and connected as in the case of the first embodiment. It is transmitted to the second circuit board 3 via the first element joint 71 of the child 7. Further, the heat generated in the second semiconductor element 5 is transmitted to the second circuit board 3 and also transmitted to the first circuit board 2 via the second element joint portion 72 of the connector 7. The heat of the first semiconductor element 4 and the second semiconductor element 5 transmitted to the first circuit board 2 and the second circuit board 3 can be released to the outside of the semiconductor module 1B.
  • the same effects as those of the first embodiment can be obtained.
  • a part of the first semiconductor element 4 and a part of the second semiconductor element 5 are arranged so as to overlap in the circuit board orthogonal direction A.
  • the size viewed from the circuit board orthogonal direction A can be reduced as compared with the semiconductor module 1A of the first embodiment. That is, it is possible to reduce the size of the semiconductor module 1B.
  • the present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit of the present invention.
  • the conductive layers of the first circuit board 2 and the second circuit board 3 are provided on both main surfaces of the ceramic plates 21, 31. It may be provided only on the main surface.
  • a sealing resin for sealing the first semiconductor element 4, the second semiconductor element 5, and the connectors 6 and 7 is provided between the first circuit board 2 and the second circuit board 3, for example. May be.
  • the first circuit board 2 and the second circuit board 3 have at least thermal conductivity and conductivity for electrical connection with the first semiconductor element 4 and the second semiconductor element 5. Just do it. Therefore, the first circuit board 2 and the second circuit board 3 are not limited to ceramic substrates, and may be aluminum substrates, for example.
  • the first semiconductor element 4 and the second semiconductor element 5 are arranged so that each part thereof overlaps the circuit board orthogonal direction A.
  • the first semiconductor element 4 is formed larger than the second semiconductor element 5 when viewed from the circuit board orthogonal direction A, and the first semiconductor element 4 and the entire or substantially entire second semiconductor element 5 may be arranged so as to overlap in the circuit board orthogonal direction A.
  • the connector 8 that electrically connects the first semiconductor element 4 and the second semiconductor element 5 is not connected to the first semiconductor element 4 and the second semiconductor element 5 at least. It suffices to have a portion that is sandwiched between the first semiconductor element 4 and the second circuit board 3.
  • the 2nd element junction part 62 has the 1st rectangular parallelepiped part 62a, the 2nd rectangular parallelepiped part 62b, and the connection part 62c.
  • the second element joint portion 62D does not have the second cuboid portion 62b and the connecting portion 62c, but has the first cuboid portion 62a.
  • the end face of the rectangular parallelepiped portion 62a on the second semiconductor element 5 side is joined to the main surface of the second semiconductor element 5 by a conductive adhesive (not shown) such as solder, and the first circuit board 2 side.
  • the end surface may be bonded to the first conductive layer 22A of the first circuit board 2 by a conductive adhesive (not shown) such as solder. Even in such a case, the heat generated in the second semiconductor element 5 is not only applied to the second circuit board 3 but also to the first circuit board 2 via the second element joint portion 62D of the connector 6. Can also tell.
  • a conductive adhesive such as solder
  • the 2nd element junction part 72 has the 1st rectangular parallelepiped part 72a, the 2nd rectangular parallelepiped part 72b, and the connection part 72c.
  • the second element joint portion 72E does not have the connecting portion 72c, and includes the first cuboid portion 72a and the second cuboid portion 72b. Then, the end face of the first rectangular parallelepiped portion 72a on the second semiconductor element 5 side is joined to the main surface of the second semiconductor element 5 by a conductive adhesive (not shown) such as solder, and the first circuit.
  • Part of the end face on the substrate 2 side is joined to part of the end face on the second circuit board 3 side of the second cuboid part 72b, and the end face on the first circuit board 2 side of the second cuboid part 72b. May be bonded to the first conductive layer 22A of the first circuit board 2 by a conductive adhesive (not shown) such as solder. Even in such a case, the heat generated in the second semiconductor element 5 is applied not only to the second circuit board 3 but also to the first circuit board 2 via the second element joint portion 72E of the connector 7. Can also tell.
  • the connectors 6, 7, and 8 are formed in a shape in which substantially rectangular parallelepiped members are combined, but the substantially cylindrical shape or cross-sectional shape is substantially Z-shaped, rod-shaped or plate-shaped. It may be formed into a suitable shape such as a shape in which members such as shapes are combined.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Combinations Of Printed Boards (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

　熱伝導性を有する第一の回路基板と、第一の回路基板と対向配置された熱伝導性を有する第二の回路基板と、第二の回路基板と対向する第一の回路基板の対向面に接合された第一の半導体素子と、第一の回路基板と対向する第二の回路基板の対向面に接合された第二の半導体素子と、第一の半導体素子と第二の半導体素子とを電気接続する接続子と、を含み、接続子は、第二の半導体素子を介さずに第一の半導体素子と第二の回路基板との間に挟み込まれて第一の半導体素子と第二の回路基板とに接する部分を有する。

Description

半導体モジュール
この発明は、半導体モジュールに関する。
 半導体モジュールとして、複数の半導体素子を備えたものが知られている（例えば特許文献１～４）。
特開２０１１－２３５７０号公報 特開２０１３－１１０１８１号公報 特開２００１－１５６２２５号公報 特開２０１２－２８３９８号公報
半導体モジュールにおいては、複数の半導体素子を高密度に集積することが求められている。高密度集積を可能とする技術として、複数の半導体素子を接続子を介して積層する構造が考えられている。しかし、この構造では、複数の半導体素子が接続子を介して積層方向に隣接して配置されるため、それぞれの半導体素子から放出された熱の一部が、接続子を介して、隣接する他の半導体素子に流入する。そのため、それぞれの半導体素子が、他の半導体素子から放出された熱によって加熱されてしまい、放熱性の点で課題がある。
そこで、本発明は、半導体素子の熱を効率よく放熱させることができる半導体モジュールを提供することを目的とする。
上記目的を達成するため、本発明に係る半導体モジュールは、熱伝導性を有する第一の回路基板と、前記第一の回路基板と対向配置された熱伝導性を有する第二の回路基板と、前記第二の回路基板と対向する前記第一の回路基板の対向面に接合された第一の半導体素子と、前記第一の回路基板と対向する前記第二の回路基板の対向面に接合された第二の半導体素子と、前記第一の半導体素子と前記第二の半導体素子とを電気接続する接続子と、を含み、前記接続子は、前記第二の半導体素子を介さずに前記第一の半導体素子と前記第二の回路基板との間に挟み込まれて前記第一の半導体素子と前記第二の回路基板とに接する部分を有する。
　本発明の半導体モジュールによれば、接続子が、第二の半導体素子を介さずに第一の半導体素子と第二の回路基板との間に挟み込まれる部分を有する。そのため、少なくとも第一の半導体素子の熱の一部が第二の半導体素子を介さずに直接第二の回路基板に伝わる。これにより、第一の半導体素子の熱が第一の回路基板と第二の回路基板との双方から効率よく放熱することができる。また、第一の半導体素子から第二の半導体素子に流入する熱が少なくなるため、第二の半導体素子が第一の半導体素子から放出された熱によって加熱されることを抑制できる。
したがって、本発明によれば、放熱性の高い半導体モジュールを提供することができる。
本発明の第一の実施形態による半導体モジュールの一例を示す図である。 図１Ａの接続子を回路基板直交方向の第一の回路基板側から見た図である。 本発明の第一の実施形態による半導体モジュールの接続子が外部接続リードに接合される場合の形態を示す図である。 本発明の第二の実施形態による半導体モジュールの一例を示す図である。 図３Ａの接続子を回路基板直交方向の第一の回路基板側から見た図である。 本発明の実施形態による半導体モジュールの変形例を示す図である。 図４Ａの接続子を回路基板直交方向の第一の回路基板側から見た図である。 本発明の第一の実施形態による半導体モジュールの変形例を示す図である。 本発明の第二の実施形態による半導体モジュールの変形例を示す図である。
（第一の実施形態）
　以下、本発明の第一の実施形態による半導体モジュールについて、図１Ａ、図１Ｂおよび図２に基づいて説明する。
　図１Ａおよび図１Ｂに示すように、第一の実施形態による半導体モジュール１Ａは、第一の回路基板２と、第一の回路基板２に対向配置された第二の回路基板３と、第一の回路基板２に接合された第一の半導体素子４と、第二の回路基板３に接合された第二の半導体素子５と、第一の半導体素子４および第二の半導体素子５を相互に電気接続する接続子６と、を備えている。
　本実施形態の第一の回路基板２および第二の回路基板３は、例えば、それぞれ熱伝導性を有するセラミック基板であり、絶縁性を有する板状のセラミック板２１，３１と、セラミック板２１，３１の主面に設けられた導電層２２，３２と、を有している。本実施形態において、第一の回路基板２および第二の回路基板３は、セラミック板２１，３１の両主面に導電層２２，３２が設けられている。導電層２２，３２は、導電性を有していればよいが、例えば銅などのように電気伝導率の高い材料からなることが好ましい。
　第一の回路基板２および第二の回路基板３は、これらの一方の導電層２２Ａ，３２Ａ（以下、第一の導電層２２Ａ，３２Ａと呼ぶ）が相互に対向するように、セラミック板２１，３１の厚さ方向に間隔をあけて配されている。第一の回路基板２および第二の回路基板３の第一の導電層２２Ａ，３２Ａは、第一の半導体素子４、第二の半導体素子５および接続子６とともに半導体モジュール１Ａの回路を構成する配線パターンとして形成されている。
　第一の回路基板２の第一の導電層２２Ａには、第一の半導体素子４が接合され、第二の回路基板３の第一の導電層３２Ａには、第二の半導体素子５が接合されている。
　具体的には、第一の半導体素子４の一方の主面が、はんだ等の導電性接着剤（不図示）によって第一の回路基板２の第一の導電層２２Ａに接合され、第二の半導体素子５の一方の主面が、はんだ等の導電性接着剤（不図示）によって第二の回路基板３の第一の導電層３２Ａに接合されている。これにより、第一の半導体素子４が第一の回路基板２の第一の導電層２２Ａに電気接続され、第二の半導体素子５が第二の回路基板３の第一の導電層３２Ａに電気接続されている。
　本実施形態では、第一の回路基板２に接合されている第一の半導体素子４の電極と、第二の回路基板３に接合されている第二の半導体素子５の電極とが互いに異なるように構成されている。
　上記のように接合された第一の半導体素子４および第二の半導体素子５は、第二の回路基板３と対向する第一の回路基板２の対向面に直交する方向（図１Ａ）において矢印Ａの方向、以下、回路基板直交方向Ａとする）から見て、互いに重畳しない位置に配置されている。
　ここで、回路基板直交方向Ａに直交する方向で、第一の半導体素子４および第二の半導体素子５が配列されている方向（図１Ａにおいて矢印Ｂの方向）を第一の回路基板面方向Ｂとし、回路基板直交方向Ａおよび第一の回路基板面方向Ｂに直交する方向（図１Ｂにおいて矢印Ｃの方向）を第二の回路基板面方向Ｃとして以下説明する。
　接続子６は、例えば、銅などの導電性材料から構成され、第一の半導体素子４と第二の半導体素子５とを電気接続する役割を果たす。接続子６は、第一の半導体素子４および第二の半導体素子５に接合されており、また、第一の回路基板２および第二の回路基板３の第一の導電層２２Ａ，３２Ａにも接合されている。
　本実施形態の接続子６は、第一の半導体素子４と接合されている第一の素子接合部６１と、第二の半導体素子５と接合されている第二の素子接合部６２と、第一の素子接合部６１と第二の素子接合部６２とを接続する接続部６３と、を有している。これらは、第一の素子接合部６１、接続部６３、第二の素子接合部６２の順に第一の回路基板面方向Ｂの一方側から他方側に配列され、一体に形成されている。
　第一の素子接合部６１は、その面が回路基板直交方向Ａ、第一の回路基板面方向Ｂおよび第二の回路基板面方向Ｃを向く略直方体状に形成されている。第一の素子接合部６１は、第一の半導体素子４とは回路基板直交方向Ａに重畳し、第二の半導体素子５とは重畳しないように配置されている。
　第一の素子接合部６１のうち、第一の半導体素子４側の端面は、はんだ等の導電性接着剤（不図示）によって第一の半導体素子４の主面に接合され、第二の回路基板３側の端面は、はんだ等の導電性接着剤（不図示）によって第二の回路基板３の第一の導電層３２Ａに接合されている。すなわち、第一の素子接合部６１は、第二の半導体素子５を介さずに、第一の半導体素子４と第二の回路基板３との間に挟み込まれている。
　接続子６の第一の素子接合部６１および第二の半導体素子５は、ともに第二の回路基板３の第一の導電層３２Ａに接合されているが、第二の回路基板３の第一の導電層３２Ａにおいて、接続子６の第一の素子接合部６１が接合される領域と、第二の半導体素子５が接合される領域とは、電気的に独立している。
　第二の素子接合部６２は、その面が回路基板直交方向Ａ、第一の回路基板面方向Ｂおよび第二の回路基板面方向Ｃを向く略直方体状にそれぞれ形成された第一の直方体部６２ａおよび第二の直方体部６２ｂと、第一の直方体部６２ａと第二の直方体部６２ｂとを連結する連結部６２ｃと、を有している。これらは、第一の直方体部６２ａ、連結部６２ｃ、第二の直方体部６２ｄの順に第一の回路基板面方向Ｂの一方側から他方側に配列され、一体に形成されている。また、第一の直方体部６２ａ、第二の直方体部６２ｂおよび連結部６２ｃは、第二の回路基板面方向Ｃの寸法が略同じ寸法となるように形成されていて、この寸法は、第一の素子接合部６１の第二の回路基板面方向Ｃの寸法よりも小さく設定されている。
　そして、第一の直方体部６２ａの連結部６２ｃ側の端面と連結部６２ｃの第一の直方体部６２ａ側の端面とが連結されていて、連結部６２ｃの第一の回路基板２側の端面と第二の直方体部６２ｂの第二の回路基板３側の端面の一部とが連結されている。回路基板直交方向Ａから見て、連結部６２ｃは、第二の直方体部６２ｂよりも第一の回路基板面方向Ｂの寸法が小さく形成されている。
　第二の素子接合部６２は、第二の半導体素子５とは回路基板直交方向Ａに重畳し、第一の半導体素子４とは重畳しないように配置されている。
　第一の直方体部６２ａのうち、第二の半導体素子５側の端面は、はんだ等の導電性接着剤（不図示）によって第二の半導体素子５の主面に接合され、第一の回路基板２側の端面は、第一の回路基板２と離間している。
　第二の直方体部６２ｂのうち、第一の回路基板２側の端面は、はんだ等の導電性接着剤（不図示）によって第一の回路基板２の第一の導電層２２Ａに接合され、第二の回路基板３側の端面は、第二の回路基板３と離間している。
　連結部６２ｃは、接合第一の回路基板２、第二の回路基板３、第一の半導体素子４、および第二の半導体素子５に接合されていない。
　このような、第一の直方体部６２ａ、第二の直方体部６２ｂおよび連結部６２ｃを有する第二の素子接合部６２は、第一の半導体素子４を介さずに、第二の半導体素子５と第一の回路基板２との間に挟み込まれている。
　接続子６の第二の素子接合部６２および第一の半導体素子４は、ともに第一の回路基板２の第一の導電層２２Ａに接合されているが、第一の回路基板２の第一の導電層２２Ａにおいて、接続子６の第二の素子接合部６２が接合される領域と、第一の半導体素子４が接合される領域とは、電気的に独立している。
　接続部６３は、その面が回路基板直交方向Ａ、第一の回路基板面方向Ｂおよび第二の回路基板面方向Ｃを向く略直方体状に形成され、第一の素子接合部６１および第二の素子接合部６２の第一の直方体部６２ａとの間に配置され、第一の素子接合部６１および第二の素子接合部６２を接続している。なお、接続部６３は、第一の回路基板２、第二の回路基板３、第一の半導体素子４、および第二の半導体素子５に接合されていない。
　なお、接続子６は、外部接続リード（不図示）に接合されていてもよい。例えば、図２に示すように、接続子６に外部接続リードと接合される外部接続部６４が設けられていてもよい。図２に示す外部接続部６４は、第一の素子接合部６１から第一の回路基板面方向Ｂの接続部６３と離間する方向に延びる形状に形成されている。
　本実施形態の半導体モジュール１Ａは、例えば、半導体モジュール１Ａの回路を外部に接続するための接続端子（不図示）を備えてもよい。この場合、接続端子は、例えば第一の半導体素子４、第二の半導体素子５や第一の導電層２２Ａ，３２Ａに接合されればよい。
　以上のように構成される本実施形態の半導体モジュール１Ａでは、通電により第一の半導体素子４において発生した熱が、第一の回路基板２に伝わるとともに、接続子６の第一の素子接合部６１を介して第二の回路基板３に伝わる。また、第二の半導体素子５において発生した熱が、第二の回路基板３に伝わるとともに、接続子６の第二の素子接合部６２を介して第一の回路基板２に伝わる。
　そして、第一の回路基板２および第二の回路基板３に伝わった第一の半導体素子４および第二の半導体素子５の熱は、半導体モジュール１Ａの外部に放出することが可能である。例えば、第一の回路基板２や第二の回路基板３において第一の導電層２２Ａ，３２Ａと反対側に位置する他方の導電層２２，３２にヒートシンクを接触させることで、上記した熱を半導体モジュール１Ａの外部に効率よく放出することができる。
　次に、上述した第一の実施形態による半導体モジュール１Ａの作用・効果について図面を用いて説明する。
　第一の実施形態による半導体モジュール１Ａでは、第一の半導体素子４と第二の半導体素子５とが回路基板直交方向Ａに互いに重畳しない位置に配置されていて、接続子６が第二の半導体素子５を介さずに第一の半導体素子４と第二の回路基板３との間に挟み込まれた第一の素子接合部６１を有する。これにより、第一の半導体素子４の熱を第二の半導体素子５を介さずに直接第二の回路基板３に伝えることができる。
　また、接続子６が第一の半導体素子４を介さずに第二の半導体素子５と第一の回路基板２との間に挟み込まれた第二の素子接合部６２を有することにより、第二の半導体素子５の熱を第一の半導体素子４を介さずに直接第一の回路基板２に伝えることができる。
　このため、第一の半導体素子４および第二の半導体素子５の熱を、第一の回路基板２と第二の回路基板３との双方から効率よく放熱させることができる。
　また、第一の半導体素子４から放出された熱は第二の半導体素子５にほとんど流入しないため、第一の半導体素子４から放出された熱によって第二の半導体素子５が加熱されることを抑制できる。また、同様にして、第二の半導体素子５から放出された熱は第一の半導体素子４にほとんど流入しないため、第二の半導体素子５から放出された熱によって第一の半導体素子４が加熱されることを抑制できる。
　以上のことから、放熱性の高い半導体モジュール１Ａを提供することができる。
（第二の実施形態）
　次に、第二の実施形態について、添付図面に基づいて説明するが、上述の第一の実施形態と同一又は同様な部材、部分には同一の符号を用いて説明を省略し、第一の実施形態と異なる構成について説明する。
　図３Ａおよび図３Ｂに示すように、第二の実施形態による半導体モジュール１Ｂは、第一の半導体素子４の一部と第二の半導体素子５の一部とが、回路基板直交方向Ａに重畳するように配置されている。回路基板直交方向Ａから見て第一の半導体素子４と第二の半導体素子５とが重畳する面積は、例えば、第一の半導体素子４の面積の１／３～１／２であるとよい。
　本実施形態では、接続子７が、第一の半導体素子４と接合されている第一の素子接合部７１と、第二の半導体素子５と接合されている第二の素子接合部７２と、を有している。第一の素子接合部７１および第二の素子接合部７２は、一体に形成されている。
　第一の素子接合部７１は、その面が回路基板直交方向Ａ、第一の回路基板面方向Ｂおよび第二の回路基板面方向Ｃを向く略直方体状にそれぞれ形成された第一の直方体部７１ａおよび第二の直方体部７１ｂを有している。これらは、第一の直方体部７１ａ、第二の直方体部７１ｂの順に、回路基板直交方向Ａの第一の回路基板２側から第二の回路基板３側に配列され、一体に形成されている。また、第一の直方体部７１ａおよび第二の直方体部７１ｂは、第二の回路基板面方向Ｃの寸法が略同じ寸法となるように形成されている。
　そして、第一の直方体部７１ａの第二の回路基板３側の端面の一部と、第二の直方体部７１ｂの第一の回路基板２側の端面とが連結されている。回路基板直交方向Ａから見て、第一の直方体部７１ａは、第二の直方体部７１ｂよりも第一の回路基板面方向Ｂの寸法が大きく形成されている。
　第一の直方体部７１ａのうち、第一の半導体素子４側の端面は、はんだ等の導電性接着剤（不図示）によって第一の半導体素子４の主面に接合され、第二の回路基板３側の端面は、一部が第二の直方体部７１ｂと接合され、他の一部が第二の素子接合部７２と接合され、これら以外の部分は、何も接合されておらず、第二の回路基板３および第二の半導体素子５と離間している。
　第二の直方体部７１ｂのうち、第二の回路基板３側の端面は、はんだ等の導電性接着剤（不図示）によって第二の回路基板３の第一の導電層３２Ａに接合され、第一の回路基板２側の端面は、第一の直方体部７１ａに接合されている。
　このような、第一の直方体部７１ａ、第二の直方体部７１ｂを有する第一の素子接合部７１は、第二の半導体素子５を介さずに、第一の半導体素子４と第二の回路基板３との間に挟み込まれている。
　接続子７の第一の素子接合部７１および第二の半導体素子５は、ともに第二の回路基板３の第一の導電層３２Ａに接合されているが、第二の回路基板３の第一の導電層３２Ａにおいて、接続子７の第一の素子接合部７１が接合される領域と、第二の半導体素子５が接合される領域とは、電気的に独立している。
　第二の素子接合部７２は、その面が回路基板直交方向Ａ、第一の回路基板面方向Ｂおよび第二の回路基板面方向Ｃを向く略直方体状にそれぞれ形成された第一の直方体部７２ａおよび第二の直方体部７２ｂと、第一の直方体部７２ａと第二の直方体部７２ｂとを連結する連結部７２ｃと、を有している。これらは、第一の直方体部７２ａ、連結部７２ｃ、第二の直方体部７２ｂの順に第一の回路基板面方向Ｂの一方側から他方側に配列され、一体に形成されている。また、第一の直方体部７２ａ、第二の直方体部７２ｂおよび連結部７２ｃは、第二の回路基板面方向Ｃの寸法が略同じ寸法となるように形成されている。この寸法は、第一の素子接合部６１の第二の回路基板面方向Ｃの寸法よりも小さく設定されている。
　そして、第一の直方体部７２ａの連結部７２ｃ側の端面と連結部７２ｃの第一の直方体部７２ａ側の端面とが連結されていて、連結部７２ｃの第一の回路基板２側の端面と第二の直方体部７２ｂの第二の回路基板３側の端面の一部とが連結されている。回路基板直交方向Ａから見て、連結部７２ｃは、第二の直方体部７２ｂよりも第一の回路基板面方向Ｂの寸法が小さく形成されている。
　第一の直方体部７２ａのうち、第二の半導体素子５側の端面は、はんだ等の導電性接着剤（不図示）によって第二の半導体素子５の主面に接合され、第一の回路基板２側の端面は、第一の回路基板２と離間している。
　第二の直方体部７２ｂのうち、第一の回路基板２側の端面は、はんだ等の導電性接着剤（不図示）によって第一の回路基板２の第一の導電層２２Ａに接合され、第二の回路基板３側の端面は、第二の回路基板３と離間している。
　連結部７２ｃは、第一の回路基板２、第二の回路基板３、第一の半導体素子４、および第二の半導体素子５に接合されていない。
　このような、第一の直方体部７２ａ、第二の直方体部７２ｂおよび連結部７２ｃを有する第二の素子接合部７２は、第一の半導体素子４を介さずに、第二の半導体素子５と第一の回路基板２との間に挟み込まれている。
　接続子７の第二の素子接合部７２および第一の半導体素子４は、ともに第一の回路基板２の第一の導電層２２Ａに接合されているが、第一の回路基板２の第一の導電層２２Ａにおいて、接続子７の第二の素子接合部７２が接合される領域と、第一の半導体素子４が接合される領域とは、電気的に独立している。
　このような接続子７は、第一の半導体素子４と第二の半導体素子５とが回路基板直交方向Ａに重畳する部分において、第一の素子接合部７１の第一の直方体部７１ａと第二の素子接合部７２の第一の直方体部７２ａとが接続されている。
　以上のように構成される本実施形態の半導体モジュール１Ｂでは、第一の実施形態の場合と同様に、第一の半導体素子４において発生した熱が、第一の回路基板２に伝わるとともに、接続子７の第一の素子接合部７１を介して第二の回路基板３に伝わる。また、第二の半導体素子５において発生した熱が、第二の回路基板３に伝わるとともに、接続子７の第二の素子接合部７２を介して第一の回路基板２に伝わる。
　そして、第一の回路基板２および第二の回路基板３に伝わった第一の半導体素子４および第二の半導体素子５の熱は、半導体モジュール１Ｂの外部に放出することが可能である。
　第二の実施形態による半導体モジュール１Ｂによれば、第一の実施形態と同様の効果を奏する。
また、本実施形態の半導体モジュール１Ｂによれば、第一の半導体素子４の一部と第二の半導体素子５の一部とが、回路基板直交方向Ａに重畳するように配置されていることにより、第一の実施形態の半導体モジュール１Ａと比較して、回路基板直交方向Ａから見た大きさを小さくすることができる。すなわち、半導体モジュール１Ｂの小型化を図ることができる。
　以上、本発明による半導体モジュールの実施形態について説明したが、本発明は上記の実施形態に限定されるものではなく、その趣旨を逸脱しない範囲で適宜変更可能である。
　例えば、上記の実施形態では、第一の回路基板２および第二の回路基板３の導電層は、セラミック板２１，３１の両主面に設けられているが、セラミック板２１，３１の一方の主面のみに設けられてもよい。
　また、第一の回路基板２と第二の回路基板３との間には、例えば第一の半導体素子４、第二の半導体素子５および接続子６，７を封止する封止樹脂が設けられてもよい。
　また、第一の回路基板２および第二の回路基板３は、少なくとも熱伝導性を有するとともに、第一の半導体素子４や第二の半導体素子５と電気接続するための導電性を有していればよい。したがって、第一の回路基板２および第二の回路基板３は、セラミック基板に限らず、例えばアルミ基板であってもよい。
　また、上記の第二の実施形態では、第一の半導体素子４と第二の半導体素子５とが、それぞれの一部どうしが回路基板直交方向Ａに重畳するように配置されているが、例えば、図４Ａおよび図５Ｂに示す半導体モジュール１Ｃのように、回路基板直交方向Ａから見て、第一の半導体素子４が第二の半導体素子５よりも大きく形成されていて、第一の半導体素子４の一部と第二の半導体素子５の全体あるいは略全体とが回路基板直交方向Ａに重畳するように配置されてもよい。この構成であっても、第一の半導体素子４と第二の半導体素子５とを電気接続する接続子８は、少なくとも第二の半導体素子５を介さずに第一の半導体素子４と第二の回路基板３との間に挟み込まれて第一の半導体素子４と第二の回路基板３とに接する部分を有していればよい。
　また、上記の第一の実施形態では、第二の素子接合部６２は、第一の直方体部６２ａ、第二の直方体部６２ｂおよび連結部６２ｃを有している。これに対し、図５に示す半導体モジュール１Ｄように、第二の素子接合部６２Ｄが第二の直方体部６２ｂおよび連結部６２ｃを有さず、第一の直方体部６２ａを有する形態で、第一の直方体部６２ａのうちの第二の半導体素子５側の端面がはんだ等の導電性接着剤（不図示）によって第二の半導体素子５の主面に接合され、第一の回路基板２側の端面がはんだ等の導電性接着剤（不図示）によって第一の回路基板２の第一の導電層２２Ａに接合されていてもよい。
　このような場合にも、第二の半導体素子５において発生した熱を、第二の回路基板３だけではく、接続子６の第二の素子接合部６２Ｄを介して第一の回路基板２にも伝えることができる。
　また、上記の第二の実施形態では、第二の素子接合部７２は、第一の直方体部７２ａ、第二の直方体部７２ｂおよび連結部７２ｃを有している。これに対し、図６に示す半導体モジュール１Ｅように、ように、第二の素子接合部７２Ｅが連結部７２ｃを有さず、第一の直方体部７２ａおよび第二の直方体部７２ｂを備えた形態で、第一の直方体部７２ａのうちの第二の半導体素子５側の端面がはんだ等の導電性接着剤（不図示）によって第二の半導体素子５の主面に接合され、第一の回路基板２側の端面の一部が第二の直方体部７２ｂの第二の回路基板３側の端面の一部と接合され、第二の直方体部７２ｂのうちの第一の回路基板２側の端面がはんだ等の導電性接着剤（不図示）によって第一の回路基板２の第一の導電層２２Ａに接合されていてもよい。
　このような場合にも、第二の半導体素子５において発生した熱を、第二の回路基板３だけではく、接続子７の第二の素子接合部７２Ｅを介して第一の回路基板２にも伝えることができる。
　また、上記の実施形態では、接続子６，７，８は、略直方体状の部材が組み合わさった形状に形成されているが、略円柱状や断面形状が略Ｚ字型状、棒状や板状などの部材が組み合わさった形状など適宜好ましい形状に形成されてよい。
　１Ａ～１Ｅ　半導体モジュール
　２　第一の回路基板
　３　第二の回路基板
　４　第一の半導体素子
　５　第二の半導体素子
　６，７，８　接続子
　Ａ　回路基板直交方向　

Claims (3)

  1. 　熱伝導性を有する第一の回路基板と、
    　前記第一の回路基板と対向配置された熱伝導性を有する第二の回路基板と、
    　前記第二の回路基板と対向する前記第一の回路基板の対向面に接合された第一の半導体素子と、
    　前記第一の回路基板と対向する前記第二の回路基板の対向面に接合された第二の半導体素子と、
    　前記第一の半導体素子と前記第二の半導体素子とを電気接続する接続子と、を含み、
    　前記接続子は、前記第二の半導体素子を介さずに前記第一の半導体素子と前記第二の回路基板との間に挟み込まれて前記第一の半導体素子と前記第二の回路基板とに接する部分を有する半導体モジュール。
  2. 前記接続子は、前記第一の半導体素子を介さずに前記第二の半導体素子と前記第一の回路基板との間に挟み込まれて前記第二の半導体素子と前記第一の回路基板とに接する部分を有する請求項１に記載の半導体モジュール。
  3. 前記第一の半導体素子と前記第二の半導体素子は、前記第一の回路基板の対向面と直交する方向から見て、互いに重畳しない位置に配置されている請求項２に記載の半導体モジュール。
PCT/JP2014/077545 2014-10-16 2014-10-16 半導体モジュール WO2016059702A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
PCT/JP2014/077545 WO2016059702A1 (ja) 2014-10-16 2014-10-16 半導体モジュール
US14/786,295 US9704828B2 (en) 2014-10-16 2014-10-16 Semiconductor module
CN201480022408.7A CN105723508B (zh) 2014-10-16 2014-10-16 半导体模块
EP14889184.9A EP3208838B1 (en) 2014-10-16 2014-10-16 Semiconductor module
JP2015522811A JP5950488B1 (ja) 2014-10-16 2014-10-16 半導体モジュール

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/077545 WO2016059702A1 (ja) 2014-10-16 2014-10-16 半導体モジュール

Publications (1)

Publication Number Publication Date
WO2016059702A1 true WO2016059702A1 (ja) 2016-04-21

Family

ID=55746272

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/077545 WO2016059702A1 (ja) 2014-10-16 2014-10-16 半導体モジュール

Country Status (5)

Country Link
US (1) US9704828B2 (ja)
EP (1) EP3208838B1 (ja)
JP (1) JP5950488B1 (ja)
CN (1) CN105723508B (ja)
WO (1) WO2016059702A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018047485A1 (ja) * 2016-09-06 2018-03-15 ローム株式会社 パワーモジュールおよびインバータ装置
WO2020008545A1 (ja) * 2018-07-04 2020-01-09 新電元工業株式会社 電子モジュール

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018211680A1 (ja) 2017-05-19 2018-11-22 新電元工業株式会社 電子モジュール
CN110612604A (zh) * 2017-05-19 2019-12-24 新电元工业株式会社 电子模块
CN110959191B (zh) * 2017-08-24 2023-10-20 新电元工业株式会社 半导体装置
US11437298B2 (en) * 2017-09-14 2022-09-06 Shindengen Electric Manufacturing Co., Ltd. Electronic module and method for manufacturing electronic module
CN111602239B (zh) * 2018-01-11 2023-10-24 阿莫善斯有限公司 功率半导体模块
JP7025948B2 (ja) * 2018-02-13 2022-02-25 ローム株式会社 半導体装置および半導体装置の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156225A (ja) 1999-11-24 2001-06-08 Denso Corp 半導体装置
US20080303138A1 (en) * 2007-06-08 2008-12-11 Continental Automotive Systems Us, Inc. Insulated gate bipolar transistor
JP2011023570A (ja) 2009-07-16 2011-02-03 Fuji Electric Systems Co Ltd 半導体パワーモジュール
WO2011064841A1 (ja) * 2009-11-25 2011-06-03 トヨタ自動車株式会社 半導体装置の冷却構造
JP2011114176A (ja) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp パワー半導体装置
JP2012028398A (ja) 2010-07-20 2012-02-09 Denso Corp 半導体装置
JP2012248658A (ja) * 2011-05-27 2012-12-13 Aisin Seiki Co Ltd 半導体装置
JP2013110181A (ja) 2011-11-18 2013-06-06 Mitsubishi Electric Corp 電力変換装置およびその製造方法
JP2014127538A (ja) * 2012-12-26 2014-07-07 Meidensha Corp 半導体モジュール

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7345885B2 (en) * 2004-12-22 2008-03-18 Hewlett-Packard Development Company, L.P. Heat spreader with multiple stacked printed circuit boards
US7615854B2 (en) * 2005-11-03 2009-11-10 International Rectifier Corporation Semiconductor package that includes stacked semiconductor die
US7592688B2 (en) * 2006-01-13 2009-09-22 International Rectifier Corporation Semiconductor package
TWI457068B (zh) * 2006-06-05 2014-10-11 Corsair Memory 記憶體系統及熱強化記憶體模組之方法
US7606034B2 (en) * 2006-06-05 2009-10-20 Corsair Memory Thermally enhanced memory module
US8358014B2 (en) 2009-05-28 2013-01-22 Texas Instruments Incorporated Structure and method for power field effect transistor
KR101321170B1 (ko) * 2010-12-21 2013-10-23 삼성전기주식회사 패키지 및 이의 제조 방법
EP2814059B1 (en) * 2012-02-09 2020-08-05 Fuji Electric Co., Ltd. Semiconductor device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156225A (ja) 1999-11-24 2001-06-08 Denso Corp 半導体装置
US20080303138A1 (en) * 2007-06-08 2008-12-11 Continental Automotive Systems Us, Inc. Insulated gate bipolar transistor
JP2011023570A (ja) 2009-07-16 2011-02-03 Fuji Electric Systems Co Ltd 半導体パワーモジュール
WO2011064841A1 (ja) * 2009-11-25 2011-06-03 トヨタ自動車株式会社 半導体装置の冷却構造
JP2011114176A (ja) * 2009-11-27 2011-06-09 Mitsubishi Electric Corp パワー半導体装置
JP2012028398A (ja) 2010-07-20 2012-02-09 Denso Corp 半導体装置
JP2012248658A (ja) * 2011-05-27 2012-12-13 Aisin Seiki Co Ltd 半導体装置
JP2013110181A (ja) 2011-11-18 2013-06-06 Mitsubishi Electric Corp 電力変換装置およびその製造方法
JP2014127538A (ja) * 2012-12-26 2014-07-07 Meidensha Corp 半導体モジュール

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3208838A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018047485A1 (ja) * 2016-09-06 2018-03-15 ローム株式会社 パワーモジュールおよびインバータ装置
WO2020008545A1 (ja) * 2018-07-04 2020-01-09 新電元工業株式会社 電子モジュール
JPWO2020008545A1 (ja) * 2018-07-04 2021-08-12 新電元工業株式会社 電子モジュール
JP7222998B2 (ja) 2018-07-04 2023-02-15 新電元工業株式会社 電子モジュール
US11776937B2 (en) 2018-07-04 2023-10-03 Shindengen Electric Manufacturing Co., Ltd. Electronic module

Also Published As

Publication number Publication date
CN105723508B (zh) 2018-06-12
EP3208838A4 (en) 2018-05-30
JP5950488B1 (ja) 2016-07-13
US20160254250A1 (en) 2016-09-01
CN105723508A (zh) 2016-06-29
EP3208838B1 (en) 2021-11-24
EP3208838A1 (en) 2017-08-23
JPWO2016059702A1 (ja) 2017-04-27
US9704828B2 (en) 2017-07-11

Similar Documents

Publication Publication Date Title
JP5950488B1 (ja) 半導体モジュール
US10159166B2 (en) Heat dissipating structure
KR20110033632A (ko) 리지드-플렉서블 회로기판 및 그 제조방법
JP2013540371A5 (ja)
WO2016079921A1 (ja) 半導体装置およびそれを用いた電子部品
JP2007165620A (ja) 半導体冷却構造
US10187970B2 (en) Multilayer substrate
WO2016157387A1 (ja) 半導体装置
JP6069945B2 (ja) 熱電ユニット
JP7124795B2 (ja) 電子部品モジュール、電子部品ユニット、および、電子部品モジュールの製造方法
JP2011091152A (ja) パワーモジュール
JP5793295B2 (ja) 半導体装置
US10251256B2 (en) Heat dissipating structure
JP6452482B2 (ja) 電子モジュール
JP2015069982A (ja) パワーモジュール
WO2016067390A1 (ja) 放熱構造
WO2015098498A1 (ja) 電子機器
JP2003318455A (ja) ペルチェ素子とその製造方法
JP2010050274A (ja) 半導体装置
JP6336106B2 (ja) 放熱構造
JP2016111141A (ja) 半導体装置
JP6007506B2 (ja) 圧電トランス装置
JP2014072384A (ja) 半導体装置
TWI534982B (zh) Chip Stacking Structure Using Bond Sheet Adhesive Technology
JP2019003971A (ja) 半導体装置

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2015522811

Country of ref document: JP

Kind code of ref document: A

REEP Request for entry into the european phase

Ref document number: 2014889184

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2014889184

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 14786295

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14889184

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE