WO2016011924A1 - 一种改善GaN基LED效率下降的外延结构 - Google Patents

一种改善GaN基LED效率下降的外延结构 Download PDF

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WO2016011924A1
WO2016011924A1 PCT/CN2015/084486 CN2015084486W WO2016011924A1 WO 2016011924 A1 WO2016011924 A1 WO 2016011924A1 CN 2015084486 W CN2015084486 W CN 2015084486W WO 2016011924 A1 WO2016011924 A1 WO 2016011924A1
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gan
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epitaxial structure
electron blocking
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琚晶
马后永
李起鸣
徐慧文
孙传平
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映瑞光电科技(上海)有限公司
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Priority to GB1700942.4A priority Critical patent/GB2543682B/en
Priority to DE112015003419.6T priority patent/DE112015003419T5/de
Publication of WO2016011924A1 publication Critical patent/WO2016011924A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Definitions

  • the present invention relates to the field of GaN-based blue LED manufacturing, and more particularly to an epitaxial structure that can improve LED efficiency degradation.
  • a light-emitting diode is a semiconductor solid-state light-emitting device that utilizes a semiconductor PN junction as a light-emitting material to directly convert electricity into light.
  • GaN gallium nitride
  • the current luminous efficiency of InGaN (Indium Gallium Nitride) and GaN-based LEDs has been significantly improved, but for high-power GaN-based LEDs, there is a serious problem of quantum efficiency (efficiency droop), that is, in high current injection. In the case of the LED, the internal quantum efficiency will drop rapidly.
  • the predecessors proposed a number of mechanisms to explain this phenomenon, including polarized electric fields, electron leakage, uneven distribution of carriers in the active region, and Auger non-radiative recombination. From the previous research, the hole injection efficiency is not high, and the leakage of electrons to the P terminal is one of the possible reasons for the decrease of quantum efficiency at high current.
  • EBL Electron Blocking Layer
  • An object of the present invention is to provide an epitaxial structure for improving the efficiency of a GaN-based LED. Under the condition of high current driving, on the one hand, it can further block a large amount of electrons from leaking to the P terminal, and on the other hand, a hole-to-multi-quantum well layer is also added. Injection, which can increase GaN-based LEDs at high currents Luminous efficiency under conditions.
  • the present invention proposes an epitaxial structure for improving the efficiency of GaN-based LEDs, which includes a substrate and a GaN underlayer, a superlattice stress relaxation layer, a multiple quantum well layer, which are sequentially stacked on the substrate, A P-type InGaN intercalation layer, a P-type electron blocking layer, and a P-type GaN layer.
  • the P-type InGaN intercalation layer is pulsed Mg doped, and the composition of In is gradually changed from 0% to 7%; the P-type InGaN intercalation layer has a thickness of 3 nm to 12 nm, and the Mg doping concentration range is 1e18 cm. -3 to 1e19cm -3 .
  • the electron blocking layer is pAlGaN or a superlattice structure composed of pAlGaN/pGaN, and the electron blocking layer has a thickness of 30 to 80 nm.
  • the doping concentration of magnesium in the P-type GaN layer ranges from 1e19 cm -3 to 6e20 cm -3
  • the thickness of the P-type GaN layer is from 30 nm to 50 nm.
  • the beneficial effects of the present invention are mainly embodied in: forming a P-type InGaN intercalation layer between the multiple quantum well layer and the P-type electron blocking layer, because the indium composition of the P-type InGaN intercalation layer is gradual, The polarization electric field caused by the lattice mismatch between the GaN barrier and the interposer layer is improved, and in addition, the indium gallium nitride has a relatively small forbidden band width compared with the conventional electron blocking layer; thus, the hole injection efficiency can be increased, and the hole injection efficiency can be prevented.
  • FIG. 1 is a cross-sectional structural view showing an epitaxial structure for improving a drop in efficiency of a GaN-based LED according to an embodiment of the present invention
  • FIG. 2 is a flow chart showing the fabrication of an epitaxial structure for improving the efficiency of GaN-based LED degradation according to an embodiment of the present invention
  • FIG. 3 to FIG. 6 are diagrams showing an improvement of the efficiency degradation of a GaN-based LED according to an embodiment of the present invention. Schematic diagram of the structure during the manufacturing process.
  • the present embodiment proposes an epitaxial structure for improving the efficiency of GaN-based LEDs, which includes a substrate 10 and a GaN underlayer and a superlattice stress relief layer sequentially stacked on the substrate. 40.
  • the P-type InGaN intercalation layer 70 is pulsed Mg doped (Delta Mg doped), wherein the composition of In is changed from 0% to 7%; the thickness of the P-type InGaN intercalation layer 70 is 3 nm to 12 nm, for example, 8 nm.
  • the Mg doping concentration ranges from 1e18 cm -3 to 1e19 cm -3 .
  • the delta-type Mg doping can increase the activation rate of the P-type InGaN intercalation layer 70, and also reduce the diffusion of magnesium into the last barrier of the multi-quantum well layer 60, so that the performance at a small current is small. It will not deteriorate.
  • magnesium may not be doped in the P-type InGaN intercalation layer 70.
  • the composition of indium in the side of the P-type InGaN interposer 70 in contact with the multiple quantum well layer 60 is 0, and the composition of indium in the side of the P-type InGaN interposer 70 in contact with the subsequently formed electron blocking layer 80 is 7%.
  • the composition of indium in the P-type InGaN intercalation layer 70 is gradually changed from 0 to 7%.
  • the gradual decrease in the composition of the indium in the P-type InGaN intercalation layer 70 can improve the polarization electric field caused by the lattice mismatch between the last barrier of the multiple quantum well layer 60 and the P-type InGaN intercalation layer 70, in addition to the indium nitride.
  • Gallium has a relatively small forbidden band width, on the one hand, increases the barrier height for electron leakage to the P terminal, and on the other hand, reduces the barrier height of the hole injected into the N underlayer, thereby increasing hole injection efficiency. Prevent electrons from leaking to the P terminal and improve luminous efficiency.
  • the P-type InGaN insertion layer 70 can improve the efficiency of the high current, and has the advantages of simple operation and easy implementation.
  • the embodiment provides a method for fabricating an epitaxial structure capable of improving the efficiency of GaN-based LED degradation, including the steps of:
  • the total thickness of the undoped gallium nitride layer 30 and the n-type silicon doped gallium nitride layer 40 ranges from 1.5 to 4.5 ⁇ m, for example, 3 ⁇ m.
  • the superlattice stress-relieving layer 50 is composed of InGaN and GaN alternately, one layer of InGaN and one layer of GaN form a periodic pair, and the In composition of InGaN varies between 0% and 7%, and the superlattice stress releasing layer 50 may include 3 to 20 of the periodic pairs, for example including 10 period pairs.
  • the multiple quantum well layer 60 is composed of a potential well and a barrier alternately.
  • One potential well and the barrier are one period pair, the same period is inward, the barrier is formed on the potential well, and the multiple quantum well layer 60 includes 5 to 18 periods. Yes, for example, 8 cycle pairs.
  • the material of the potential well is indium gallium nitride
  • the thickness of the well is in the range of 2 nm to 5 nm
  • the material of the barrier is gallium nitride
  • the thickness of the barrier ranges from 6 nm to 14 nm
  • the last barrier is in the multiple quantum well layer 6.
  • the barrier adjacent to the P-type InGaN interposer 70 is subjected to n-type silicon doping, and the doping range is 1e17 cm -3 to 2e18 cm -3 .
  • the P-type InGaN intercalation layer 70 is doped with a magnesium-doped element (Delta Mg doping) in a doping concentration range of 2e18 to 1e19, and the P-type InGaN intercalation layer 70 has a thickness of 3 nm to 12 nm, for example, 8 nm.
  • a magnesium-doped element Delta Mg doping
  • An electron blocking layer 80 and a P-type GaN layer 90 are sequentially formed on the P-type InGaN interposer 70 to form an epitaxial structure, as shown in FIG.
  • the electron blocking layer 80 formed on the P-type InGaN interposer 70 is a superlattice structure of P-type aluminum-doped gallium nitride (pAlGaN), P-type gallium nitride (pGaN), or a combination of both (pAlGaN-GaN)
  • the thickness of the electron blocking layer 80 is 30 nm to 80 nm, for example, 50 nm.
  • the electron blocking layer 80 can increase the barrier to electrons, prevent electrons from leaking to the P terminal, and further improve the luminous efficiency.
  • the P-type GaN layer 90 formed on the electron blocking layer 80 is a P-type magnesium-doped gallium nitride, the doping concentration range of magnesium is 1e19 to 6e19 cm -3 , and the thickness of the P-type GaN layer 90 is 30 nm to 50 nm, for example. It is 40 nm, thereby forming an epitaxial structure.
  • a P-type InGaN intercalation layer is formed between the multi-quantum well layer and the P-type electron blocking layer, because the indium group is inserted in the P-type InGaN intercalation layer.
  • the indium gallium nitride has a relatively small forbidden band width, thereby being able to increase the empty
  • the hole injection efficiency prevents electrons from leaking to the P terminal and improves the luminous efficiency of the GaN-based LED under high current conditions.

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Abstract

提出了一种改善LED效率下降的外延结构，包括衬底（10）和依次堆叠在衬底上的GaN底层、超晶格应力释放层（50）、多量子阱层（60）、P型InGaN插入层（70）、P型电子阻挡层（80）以及P型GaN层（90）。在多量子阱层（60）最后一个势垒和P型电子阻挡层（80）之间插入一层P型InGaN插入层（70），P型InGaN插入层（70）的In组分从靠近多量子阱层（60）到电子阻挡层（80）由小到大渐变，且采用脉冲式的镁掺杂。由此，可以减少电子向P端的泄露，另一方面可以增强空穴向有源区的注入。可以改善GaN基LED效率下降的问题，提高大电流条件下的发光效率。

Description

一种改善GaN基LED效率下降的外延结构 技术领域
本发明涉及GaN基蓝光LED制造领域，尤其涉及一种可以改善LED效率下降的外延结构。
背景技术
发光二极管(LED，Light Emitting Diode)是一种半导体固体发光器件，其利用半导体PN结作为发光材料，可以直接将电转换为光。GaN(氮化镓)基高亮度发光二极管是目前光电子领域和产业的前沿和热点。当前InGaN(氮化铟镓)、GaN基LED的发光效率已经有了显著地改善，但对于大功率GaN基LED来说，存在着严重的量子效率下降(efficiency droop)问题，即在大电流注入的情况下，LED的内量子效率会迅速下降。前人提出了很多机制去解释这种现象，包括极化电场、电子泄露，有源区载流子分布不均匀、俄歇非辐射复合等。从之前的研究来看，空穴注入效率不高，且电子向P端泄露是造成大电流下量子效率下降的可能原因之一。
针对电子阻挡不够的问题，有研究者提出了电子阻挡层(Electron Blocking Layer，EBL)。然而，由于异质结之间极化电场的存在，电子阻挡层会向下倾斜，在大电流注入条件下，传统的电子阻挡层仍然不足以阻挡电子向P端的泄露，同时传统电子阻挡层大的禁带宽度也阻碍了空穴向多量子阱层的注入。
发明内容
本发明的目的在于提供一种改善GaN基LED效率下降的外延结构，在大电流驱动条件下，一方面能够进一步阻挡大量电子向P端泄露，另一方面也增加了空穴向多量子阱层的注入，因而可以提高GaN基LED在大电流 条件下的发光效率。
为了实现上述目的，本发明提出了一种改善GaN基LED效率下降的外延结构，所述结构包括衬底和依次堆叠在衬底上的GaN底层、超晶格应力释放层、多量子阱层、P型InGaN插入层、P型电子阻挡层以及P型GaN层。
进一步的，所述P型InGaN插入层为脉冲式Mg掺杂，In的组分从0％至7％渐变；所述P型InGaN插入层的厚度为3nm～12nm，Mg掺杂浓度范围是1e18cm-3～1e19cm-3。
进一步的，所述电子阻挡层为pAlGaN、或者由pAlGaN/pGaN组成的超晶格结构，所述电子阻挡层的厚度为30～80nm。
进一步的，所述P型GaN层中镁的掺杂浓度范围是1e19cm-3～6e20cm-3，所述P型GaN层的厚度为30nm～50nm。
与现有技术相比，本发明的有益效果主要体现在：在多量子阱层和P型电子阻挡层之间形成P型InGaN插入层，由于P型InGaN插入层中铟组分渐变，所以能够改善GaN势垒与插入层之间的晶格失配引起的极化电场，此外，跟传统电子阻挡层相比，铟镓氮具有比较小的禁带宽度；因而能够增加空穴注入效率，阻止电子向P端泄露，提高GaN基LED在大电流条件下的发光效率。
附图说明
图1为本发明一实施例中改善GaN基LED效率下降的外延结构的剖面结构示意图；
图2为本发明一实施例中改善GaN基LED效率下降的外延结构的制作流程图；
图3至图6为本发明一实施例中可以改善GaN基LED效率下降的外延 结构制造过程中的剖面示意图。
具体实施方式
下面将结合示意图对本发明的改善GaN基LED效率下降的外延结构进行更详细的描述，其中表示了本发明的优选实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并不作为对本发明的限制。
为了清楚，不描述实际实施例的全部特征。在下列描述中，不详细描述公知的功能和结构，因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中，必须做出大量实施细节以实现开发者的特定目标，例如按照有关系统或有关商业的限制，由一个实施例改变为另一个实施例。另外，应当认为这种开发工作可能是复杂和耗费时间的，但是对于本领域技术人员来说仅仅是常规工作。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
正如背景技术所提及的，在大电流注入下，有源区存在大量的电子，因而将会有过量的电子泄露到P端；同时，由于空穴的有效质量比较大，导致它向有源区的注入不是很均匀，主要集中在靠近P端的势阱中。
请参考图1，针对上述问题，本实施例提出了一种改善GaN基LED效率下降的外延结构，所述结构包括衬底10和依次堆叠在衬底上的GaN底层、超晶格应力释放层40、多量子阱层50、P型InGaN插入层70、P型电子阻挡层80以及P型GaN层90。
其中，P型InGaN插入层70为脉冲式Mg掺杂(Delta Mg掺杂)，其中In的组分从0％至7％渐变；P型InGaN插入层70的厚度为3nm～12nm，例如是8nm，Mg掺杂浓度范围是1e18cm-3～1e19cm-3。采用delta式的Mg掺杂可以提高P型InGaN插入层70镁的活化率，同时也可以减少镁向多量子阱层60最后一个势垒(last barrier)中的扩散，使其在小电流时性能也不会恶化。如果外延结构用来制作小电流下的芯片，可以不在P型InGaN插入层70中掺杂镁。P型InGaN插入层70与多量子阱层60相接触的一面中铟的组分为0，P型InGaN插入层70与后续形成的电子阻挡层80相接触的一面中铟的组分为7％，P型InGaN插入层70中铟的组分由0至7％渐变。由于P型InGaN插入层70中铟组分渐变减小能够改善多量子阱层60最后一个势垒与P型InGaN插入层70之间的晶格失配引起的极化电场，此外由于氮化铟镓具有比较小的禁带宽度一方面增大了对电子向P端泄露的势垒高度，另一方面又减小了空穴向N底层注入的势垒高度，因而能够增加空穴注入效率，阻止电子向P端泄露，提高发光效率。
本实施例仅通过一层P型InGaN插入层70即可改善大电流下效率不高的现象，具有操作简单，易于实现等优点。
请参考图2，本实施例提出了一种可以改善GaN基LED效率下降的外延结构的制造方法，包括步骤：
S100：提供衬底10，在衬底上形成GaN缓冲层20，GaN缓冲层20生长厚度约为15nm～50nm，如图3所示；
S200：在GaN缓冲层20上依次形成非掺杂氮化镓层30和n型硅掺杂氮化镓层40；
非掺杂氮化镓层30和n型硅掺杂氮化镓层40的总厚度范围为1.5～4.5μm，例如是3μm。
S300：在n型硅掺杂氮化镓层40上形成超晶格应力释放层50，如图4 所示；
其中，超晶格应力释放层50为InGaN和GaN交替组成，一层InGaN和一层GaN组成一个周期对，InGaN内In组分变化范围为0％-7％之间，超晶格应力释放层50可包括3～20个所述周期对，例如包括10个周期对。
S400：在超晶格应力释放层50上形成多量子阱层60，如图5所示；
多量子阱层60由势阱和势垒交替组成，一个势阱和势垒为一个周期对，同一周期对内，势垒形成于势阱之上，多量子阱层60包括5～18个周期对，例如是8个周期对。势阱的材质为氮化铟镓，势阱的厚度范围是2nm～5nm，势垒的材质为氮化镓，势垒的厚度范围为6nm～14nm；多量子阱层6中除了最后一个势垒(即与P型InGaN插入层70相邻的势垒)外其他势垒均进行n型硅掺杂，掺杂范围为1e17cm-3～2e18cm-3。
S500：在多量子阱层60上形成P型InGaN插入层70，如图7所示；
P型InGaN插入层70采用脉冲式掺杂镁元素(Delta Mg掺杂)，掺杂浓度范围是2e18～1e19，P型InGaN插入层70的厚度为3nm～12nm，例如是8nm。
S600：在P型InGaN插入层70上依次形成电子阻挡层80和P型GaN层90，构成外延结构，如图1所示。
在P型InGaN插入层70上形成的电子阻挡层80为P型掺杂铝的氮化镓(pAlGaN)、P型氮化镓(pGaN)或两者组合(pAlGaN-GaN)的超晶格结构，电子阻挡层80的厚度为30nm～80nm，例如是50nm，电子阻挡层80可以能够增加对电子的阻挡，防止电子向P端泄露，进一步的提高发光效率。
在电子阻挡层80上形成的P型GaN层90为P型掺杂镁的氮化镓，镁的掺杂浓度范围是1e19～6e19cm-3，P型GaN层90的厚度为30nm～50nm，例如是40nm，由此形成外延结构。
综上，在本发明实施例提供的改善GaN基LED效率下降的外延结构中，在多量子阱层和P型电子阻挡层之间形成P型InGaN插入层，由于P型InGaN插入层中铟组分渐变，所以能够改善GaN势垒与插入层之间的晶格失配引起的极化电场，此外，跟传统电子阻挡层相比，铟镓氮具有比较小的禁带宽度，因而能够增加空穴注入效率，阻止电子向P端泄露，提高GaN基LED在大电流条件下的发光效率。
上述仅为本发明的优选实施例而已，并不对本发明起到任何限制作用。任何所属技术领域的技术人员，在不脱离本发明的技术方案的范围内，对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动，均属未脱离本发明的技术方案的内容，仍属于本发明的保护范围之内。

Claims (7)

  1. 一种改善GaN基LED效率下降的外延结构，所述外延结构包括衬底和依次堆叠在衬底上的GaN底层、超晶格应力释放层、多量子阱层、P型InGaN插入层、P型电子阻挡层以及P型GaN层。
  2. 如权利要求1所述的外延结构，其特征在于，所述P型InGaN插入层为脉冲式Mg掺杂。
  3. 如权利要求1所述的外延结构，其特征在于，所述Mg的掺杂浓度范围是1e18cm-3～1e19cm-3。
  4. 如权利要求1所述的外延结构，其特征在于，所述P型InGaN插入层中In的组分从0％至7％渐变。
  5. 如权利要求1所述的外延结构，其特征在于，所述P型InGaN插入层的厚度为3nm～12nm。
  6. 如权利要求1所述的外延结构，其特征在于，所述电子阻挡层为pAlGaN、或者由pAlGaN/pGaN组成的超晶格结构，所述电子阻挡层的厚度为30～80nm。
  7. 如权利要求1所述的外延结构，其特征在于，所述P型GaN层中镁的掺杂浓度范围是1e19cm-3～6e20cm-3，所述P型GaN层的厚度为30nm～50nm。
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* Cited by examiner, † Cited by third party
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CN113410345A (zh) * 2021-06-15 2021-09-17 厦门士兰明镓化合物半导体有限公司 紫外半导体发光元件
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134732B (zh) * 2014-07-24 2017-09-19 映瑞光电科技(上海)有限公司 一种改善GaN基LED效率下降的外延结构
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208732A (ja) * 1994-09-19 2002-07-26 Toshiba Corp 化合物半導体装置
CN101359710A (zh) * 2008-09-25 2009-02-04 上海蓝光科技有限公司 一种绿光发光二极管的制造方法
CN102185054A (zh) * 2011-04-02 2011-09-14 映瑞光电科技(上海)有限公司 发光二极管及其制造方法
CN102782808A (zh) * 2009-12-10 2012-11-14 同和电子科技有限公司 p型AlGaN层及其制造方法和Ⅲ族氮化物半导体发光元件
CN102969416A (zh) * 2012-11-01 2013-03-13 扬州中科半导体照明有限公司 一种氮化物led外延片及其生长方法
CN104134732A (zh) * 2014-07-24 2014-11-05 映瑞光电科技(上海)有限公司 一种改善GaN基LED效率下降的外延结构

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326963B2 (en) * 2004-12-06 2008-02-05 Sensor Electronic Technology, Inc. Nitride-based light emitting heterostructure
KR101018088B1 (ko) * 2008-11-07 2011-02-25 삼성엘이디 주식회사 질화물 반도체 소자
CN102157646A (zh) * 2011-05-03 2011-08-17 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
US20140077153A1 (en) * 2012-09-14 2014-03-20 Tsmc Solid State Lighting Ltd. Photonic Devices with Embedded Hole Injection Layer to Improve Efficiency and Droop Rate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208732A (ja) * 1994-09-19 2002-07-26 Toshiba Corp 化合物半導体装置
CN101359710A (zh) * 2008-09-25 2009-02-04 上海蓝光科技有限公司 一种绿光发光二极管的制造方法
CN102782808A (zh) * 2009-12-10 2012-11-14 同和电子科技有限公司 p型AlGaN层及其制造方法和Ⅲ族氮化物半导体发光元件
CN102185054A (zh) * 2011-04-02 2011-09-14 映瑞光电科技(上海)有限公司 发光二极管及其制造方法
CN102969416A (zh) * 2012-11-01 2013-03-13 扬州中科半导体照明有限公司 一种氮化物led外延片及其生长方法
CN104134732A (zh) * 2014-07-24 2014-11-05 映瑞光电科技(上海)有限公司 一种改善GaN基LED效率下降的外延结构

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113410345A (zh) * 2021-06-15 2021-09-17 厦门士兰明镓化合物半导体有限公司 紫外半导体发光元件
CN115224171A (zh) * 2022-09-20 2022-10-21 江西兆驰半导体有限公司 高光效发光二极管外延片及其制备方法、发光二极管
CN115224171B (zh) * 2022-09-20 2022-11-29 江西兆驰半导体有限公司 高光效发光二极管外延片及其制备方法、发光二极管
CN117410413A (zh) * 2023-12-14 2024-01-16 江西兆驰半导体有限公司 一种led外延片及其制备方法
CN117410413B (zh) * 2023-12-14 2024-03-08 江西兆驰半导体有限公司 一种led外延片及其制备方法
CN117810325A (zh) * 2024-02-29 2024-04-02 江西兆驰半导体有限公司 一种高光效的发光二极管外延片及其制备方法
CN117810325B (zh) * 2024-02-29 2024-05-28 江西兆驰半导体有限公司 一种高光效的发光二极管外延片及其制备方法

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