CN106299052B - 一种用于LED的GaN外延结构以及制备方法 - Google Patents
一种用于LED的GaN外延结构以及制备方法 Download PDFInfo
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- CN106299052B CN106299052B CN201610841964.8A CN201610841964A CN106299052B CN 106299052 B CN106299052 B CN 106299052B CN 201610841964 A CN201610841964 A CN 201610841964A CN 106299052 B CN106299052 B CN 106299052B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000012010 growth Effects 0.000 claims abstract description 32
- 239000000470 constituent Substances 0.000 claims abstract description 15
- 230000004888 barrier function Effects 0.000 claims abstract description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 60
- 230000035882 stress Effects 0.000 description 23
- 238000005036 potential barrier Methods 0.000 description 5
- 238000010792 warming Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
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Priority Applications (1)
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CN201610841964.8A CN106299052B (zh) | 2016-09-22 | 2016-09-22 | 一种用于LED的GaN外延结构以及制备方法 |
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CN201610841964.8A CN106299052B (zh) | 2016-09-22 | 2016-09-22 | 一种用于LED的GaN外延结构以及制备方法 |
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CN106299052A CN106299052A (zh) | 2017-01-04 |
CN106299052B true CN106299052B (zh) | 2018-11-27 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808910A (zh) * | 2017-09-23 | 2018-03-16 | 苏州思创源博电子科技有限公司 | 一种led外延结构的制备方法 |
CN108878603A (zh) * | 2018-07-03 | 2018-11-23 | 贵州杰芯光电科技有限公司 | 一种氮化镓led的外延制备方法 |
CN110137319A (zh) * | 2019-05-21 | 2019-08-16 | 芜湖德豪润达光电科技有限公司 | Led外延结构及其制作方法 |
CN110635004A (zh) * | 2019-08-28 | 2019-12-31 | 映瑞光电科技(上海)有限公司 | GaN基发光二极管外延结构 |
CN112071963A (zh) * | 2020-08-10 | 2020-12-11 | 福建兆元光电有限公司 | 一种led外延片及制作方法 |
CN112635626A (zh) * | 2021-01-04 | 2021-04-09 | 厦门乾照光电股份有限公司 | 一种半导体外延结构及其制作方法、led芯片 |
CN114361302B (zh) * | 2022-03-17 | 2022-06-17 | 江西兆驰半导体有限公司 | 一种发光二极管外延片、发光二极管缓冲层及其制备方法 |
Citations (7)
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CN103199169A (zh) * | 2013-03-13 | 2013-07-10 | 扬州中科半导体照明有限公司 | 具有P型GaN的GaN基绿光LED中的外延生长结构 |
CN103474539A (zh) * | 2013-09-25 | 2013-12-25 | 湘能华磊光电股份有限公司 | 含有超晶格层的led结构外延生长方法及其结构 |
CN104134732A (zh) * | 2014-07-24 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | 一种改善GaN基LED效率下降的外延结构 |
CN104362233A (zh) * | 2014-10-29 | 2015-02-18 | 华灿光电(苏州)有限公司 | 一种GaN基发光二极管的外延片及其制备方法 |
CN104465925A (zh) * | 2014-12-16 | 2015-03-25 | 聚灿光电科技(苏州)有限公司 | 一种led芯片外延层的制作方法及led芯片结构 |
CN104659171A (zh) * | 2015-01-21 | 2015-05-27 | 西安神光皓瑞光电科技有限公司 | 一种光电器件的电子阻挡层结构 |
CN105633235A (zh) * | 2015-12-29 | 2016-06-01 | 山东浪潮华光光电子股份有限公司 | 一种n型GaN结构的GaN基LED外延结构及生长方法 |
-
2016
- 2016-09-22 CN CN201610841964.8A patent/CN106299052B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103199169A (zh) * | 2013-03-13 | 2013-07-10 | 扬州中科半导体照明有限公司 | 具有P型GaN的GaN基绿光LED中的外延生长结构 |
CN103474539A (zh) * | 2013-09-25 | 2013-12-25 | 湘能华磊光电股份有限公司 | 含有超晶格层的led结构外延生长方法及其结构 |
CN104134732A (zh) * | 2014-07-24 | 2014-11-05 | 映瑞光电科技(上海)有限公司 | 一种改善GaN基LED效率下降的外延结构 |
CN104362233A (zh) * | 2014-10-29 | 2015-02-18 | 华灿光电(苏州)有限公司 | 一种GaN基发光二极管的外延片及其制备方法 |
CN104465925A (zh) * | 2014-12-16 | 2015-03-25 | 聚灿光电科技(苏州)有限公司 | 一种led芯片外延层的制作方法及led芯片结构 |
CN104659171A (zh) * | 2015-01-21 | 2015-05-27 | 西安神光皓瑞光电科技有限公司 | 一种光电器件的电子阻挡层结构 |
CN105633235A (zh) * | 2015-12-29 | 2016-06-01 | 山东浪潮华光光电子股份有限公司 | 一种n型GaN结构的GaN基LED外延结构及生长方法 |
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Effective date of registration: 20211217 Address after: 274000 e7-1, Jiuwei Industrial Park, No. 2059, Zhonghua West Road, Wanfu office, high tech Zone, Heze City, Shandong Province Patentee after: Shandong Green Kairui Precision Instrument Co.,Ltd. Address before: 312300 Shangyu District, Shaoxing City, Zhejiang province Beizhen New River Village Patentee before: SHAOXING SHANGYU EMAX LIGHTING ELECTRIC APPLIANCE CO.,LTD. |