WO2016009626A1 - 膜厚制御装置、膜厚制御方法および成膜装置 - Google Patents

膜厚制御装置、膜厚制御方法および成膜装置 Download PDF

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WO2016009626A1
WO2016009626A1 PCT/JP2015/003491 JP2015003491W WO2016009626A1 WO 2016009626 A1 WO2016009626 A1 WO 2016009626A1 JP 2015003491 W JP2015003491 W JP 2015003491W WO 2016009626 A1 WO2016009626 A1 WO 2016009626A1
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Prior art keywords
rate
film thickness
unit
thickness control
filter unit
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PCT/JP2015/003491
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English (en)
French (fr)
Japanese (ja)
Inventor
小林　義和
伊藤　敦
治郎 猿渡
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株式会社アルバック
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Priority to CN201580033779.XA priority Critical patent/CN106471152B/zh
Priority to JP2016534107A priority patent/JP6060319B2/ja
Priority to KR1020167033200A priority patent/KR102035143B1/ko
Publication of WO2016009626A1 publication Critical patent/WO2016009626A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
    • G01B17/02—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
    • G01B17/02—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness
    • G01B17/025—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring thickness for measuring thickness of coating

Definitions

  • the present invention measures a film forming rate based on the oscillation frequency of a vibrator installed in a film forming apparatus, and can control a deposition source based on the measured film forming rate, a film
  • the present invention relates to a thickness control method and a film forming apparatus.
  • a technique called quartz crystal microbalance is used to measure the thickness of a film formed on a substrate and the film forming rate.
  • QCM quartz crystal microbalance
  • the heating temperature of the deposition material in the deposition source is feedback-controlled based on the measured deposition rate.
  • the output of the film thickness sensor may momentarily fluctuate greatly due to the influence of disturbance such as splashing of the deposition material or noise.
  • Patent Document 1 describes a method of measuring the resonance frequency of a quartz oscillator at constant time intervals, calculating a film thickness increase amount by taking a moving average of film thicknesses calculated based on these resonance frequencies. ing.
  • a film thickness control apparatus measures a film forming rate based on an oscillation frequency of a vibrator installed in a film forming apparatus having a deposition source, and the above film forming rate is measured based on the measured film forming rate.
  • a film thickness control device for controlling a deposition source which includes a rate calculation unit, a first filter unit, and a second filter unit.
  • the rate calculation unit is configured to calculate a rate conversion value for each unit time based on the oscillation frequency of the vibrator.
  • the first filter unit is configured to remove an abnormal value from the rate conversion value output from the rate calculation unit.
  • the second filter unit is configured to smooth the rate conversion value output from the first filter unit.
  • the film thickness control device since the first filter unit for removing the abnormal value from the rate conversion value output from the rate calculation unit is provided, the rate conversion value from which the abnormal value is removed is used.
  • the smoothing process in the second filter unit can be performed. Thereby, it is possible to suppress excessive feedback control to the deposition source caused by the abnormal value.
  • the configuration of the first filter unit is not particularly limited as long as it has a function capable of removing an abnormal value.
  • the first filter unit is configured to extract a representative value from the rate conversion value output from the rate calculation unit.
  • the said representative value should just be a rate conversion value with a low probability that it is an abnormal value.
  • the first filter unit is configured of a median operation filter.
  • the number of samples is not particularly limited, and can be arbitrarily set within a range that does not affect feedback control to the deposition source, for example.
  • the configuration of the second filter unit is not particularly limited as long as it is a filter having a smoothing function, and is typically configured of a moving average filter or a first-order low-pass filter.
  • Moving averages include simple moving averages, weighted moving averages, and the like.
  • the number of samples is not particularly limited, and can be arbitrarily set within a range that does not affect feedback control to the deposition source, for example.
  • the film thickness control device may further include a third filter unit.
  • the third filter unit smoothes the rate conversion value output from the rate calculation unit, and outputs the smoothed rate conversion value to the first filter unit. This makes it possible to smooth the rate conversion value input to the first filter unit even when there is a relatively large change in the rate conversion value output from the rate calculation unit, so that the measurement accuracy decreases. Can be suppressed.
  • the configuration of the third filter unit is not particularly limited as long as it is a filter having a smoothing function, and is typically configured by a moving average filter or a first-order low-pass filter similar to the second filter unit.
  • the number of samples is not particularly limited, and can be arbitrarily set within a range that does not affect feedback control to the deposition source, for example.
  • a film thickness control method measures a film forming rate based on an oscillation frequency of a vibrator installed in a film forming apparatus having a deposition source, and the above film forming rate is measured based on the measured film forming rate.
  • a film thickness control method for controlling a deposition source including calculating a rate conversion value for each unit time based on the oscillation frequency of the vibrator. Outliers are removed from the calculated rate conversion value. The rate conversion value from which the outliers have been removed is smoothed. As described above, by removing the abnormal value from the rate converted value before the smoothing process of the rate converted value, it is possible to suppress a decrease in measurement accuracy of the film forming rate caused by the abnormal value.
  • a film forming apparatus includes a vacuum chamber, a deposition source, a film thickness sensor, and a film thickness monitor.
  • the vapor deposition source is disposed inside the vacuum chamber.
  • the film thickness sensor is disposed inside the vacuum chamber and has a vibrator that oscillates at a predetermined resonance frequency.
  • the film thickness monitor includes a rate calculation unit, a first filter unit, a second filter unit, and an output unit.
  • the rate calculation unit is configured to calculate a rate conversion value for each unit time based on the oscillation frequency of the vibrator.
  • the first filter unit is configured to remove an abnormal value from the rate conversion value output from the rate calculation unit.
  • the second filter unit is configured to smooth the rate conversion value output from the first filter unit.
  • the output unit is configured to generate a control signal for controlling the deposition source based on the rate conversion value output from the second filter unit.
  • FIG. 7 is a diagram showing a rate output obtained using a filter according to an embodiment of the present invention. It is a figure which compares and demonstrates the characteristic of the various filters with respect to a step response. It is a figure which shows the other example of the real data of the film-forming rate output from a film thickness sensor. It is a figure which shows the rate output obtained using the filter which concerns on a comparative example to real data of FIG. It is a figure which shows the rate output obtained using the filter which concerns on this embodiment to real data of FIG. It is a flowchart explaining the measuring method of the film-forming rate which concerns on other embodiment of this invention.
  • FIG. 1 is a schematic cross-sectional view showing a film forming apparatus according to an embodiment of the present invention.
  • the film forming apparatus of the present embodiment is configured as a vacuum evaporation apparatus.
  • the film forming apparatus 10 of the present embodiment includes a vacuum chamber 11, a vapor deposition source 12 disposed inside the vacuum chamber 11, a substrate holder 13 facing the vapor deposition source 12, and a film disposed inside the vacuum chamber 11. And a thickness sensor 14.
  • the vacuum chamber 11 is connected to the vacuum evacuation system 15, and is configured to be capable of maintaining the inside in a predetermined reduced pressure atmosphere.
  • the vapor deposition source 12 is configured to be capable of generating vapor (particles) of vapor deposition material.
  • the vapor deposition source 12 is electrically connected to the power supply unit 18, and constitutes an evaporation source that heats and evaporates the metal material or the organic material to release the vapor deposition particles.
  • the type of evaporation source is not particularly limited, and various types such as resistance heating type, induction heating type and electron beam heating type can be applied.
  • the substrate holder 13 is configured to be capable of holding a substrate W, which is a film formation target such as a semiconductor wafer or a glass substrate, toward the deposition source 12.
  • the film thickness sensor 14 incorporates a vibrator having a predetermined fundamental frequency (eigen frequency), and as described later, for measuring the film thickness and deposition rate of the metal film or organic film deposited on the substrate W. Construct a sensor head.
  • a vibrator for example, an AT-cut quartz vibrator having relatively excellent temperature characteristics is used, and the predetermined basic frequency is typically 5 to 6 MHz.
  • the film thickness sensor 14 is disposed inside the vacuum chamber 11 so as to face the deposition source 12.
  • the film thickness sensor 14 is typically disposed in the vicinity of the substrate holder 13.
  • the output of the film thickness sensor 14 is supplied to the measurement unit 17 (film thickness control device).
  • the measurement unit 17 measures the film thickness and the film formation rate based on the change of the resonant frequency of the vibrator, and controls the deposition source 12 so that the film formation rate becomes a predetermined value.
  • the relationship between the frequency change due to the adsorption of QCM and the mass load is the Sauerbrey equation shown by the following equation (1).
  • ⁇ Fs represents frequency change amount
  • ⁇ m mass change amount
  • f 0 fundamental frequency
  • ⁇ Q represents density of quartz
  • ⁇ Q represents shear stress of quartz
  • A represents electrode area
  • N represents constant. ing.
  • the film forming apparatus 10 further includes a shutter 16.
  • the shutter 16 is disposed between the vapor deposition source 12 and the substrate holder 13 and is configured to be able to open or shield the incident path of vapor deposition particles from the vapor deposition source 12 to the substrate holder 13 and the film thickness sensor 14 Ru.
  • the opening and closing of the shutter 16 is controlled by a control unit (not shown).
  • the shutter 16 is closed at the start of deposition until the emission of deposition particles is stabilized in the deposition source 12. Then, when the release of the vapor deposition particles is stabilized, the shutter 16 is opened. Thereby, the vapor deposition particles from the vapor deposition source 12 reach the substrate W on the substrate holder 13, and the film formation process of the substrate W is started. At the same time, the vapor deposition particles from the vapor deposition source 12 reach the film thickness sensor 14, and the film thickness of the vapor deposition film on the substrate W and the film formation rate thereof are monitored in the measurement unit 17.
  • FIG. 2 is a schematic block diagram showing one configuration example of the measurement unit 17.
  • the measurement unit 17 includes an oscillation circuit 41, a measurement circuit 42, and a controller 43.
  • the oscillation circuit 41 oscillates the vibrator 20 of the film thickness sensor 14.
  • the measurement circuit 42 is for measuring the resonant frequency of the vibrator 20 output from the oscillation circuit 41.
  • the controller 43 obtains the resonance frequency of the vibrator 20 every unit time via the measurement circuit 42, and calculates the deposition rate of the deposition material particles on the substrate W and the thickness of the deposition film deposited on the substrate W. .
  • the controller 43 further controls the deposition source 12 so that the deposition rate becomes a predetermined value.
  • the measurement circuit 42 includes a mixer circuit 51, a low pass filter 52, a low frequency counter 53, a high frequency counter 54, and a reference signal generation circuit 55.
  • the signal output from the oscillation circuit 41 is input to the high frequency counter 54, and first, the approximate value of the oscillation frequency of the oscillation circuit 41 is measured.
  • the approximate value of the oscillation frequency of the oscillation circuit 41 measured by the high frequency counter 54 is output to the controller 43.
  • the controller 43 oscillates the reference signal generation circuit 55 at a reference frequency (for example, 5 MHz) having a frequency close to the measured approximate value.
  • the signal of the frequency oscillated at the reference frequency and the signal output from the oscillation circuit 41 are input to the mixer circuit 51.
  • the mixer circuit 51 mixes the two types of input signals, and outputs the mixed signal to the low frequency counter 53 via the low pass filter 52.
  • the signal input from the oscillation circuit 41 is cos (( ⁇ + ⁇ ) t) and the signal input from the reference signal generation circuit is cos ( ⁇ t), cos ( ⁇ t) ⁇ cos (
  • An AC signal represented by the equation ( ⁇ + ⁇ ) t is generated. This equation is in the form of multiplying cos ( ⁇ t) and cos (( ⁇ + ⁇ ) t), and the AC signal represented by this equation is a high frequency component represented by cos ((2 ⁇ ⁇ + ⁇ ) t) And the signal of low frequency components represented by cos (.alpha.t).
  • the signal generated by the mixer circuit 51 is input to the low pass filter 52, the high frequency component signal cos ((2 ⁇ ⁇ + ⁇ ) t) is removed, and only the low frequency component signal cos ( ⁇ t) is input to the low frequency counter 53. It is input. That is, the low frequency counter 53 has a low frequency component which is an absolute value
  • the low frequency counter 53 measures the frequency of the low frequency component signal and outputs the measured value to the controller 43.
  • the controller 43 calculates the frequency of the signal output from the oscillation circuit 41 from the frequency measured by the low frequency counter 53 and the frequency of the output signal of the reference signal generation circuit 55. Specifically, when the frequency of the output signal of the reference signal generation circuit 55 is smaller than the frequency of the output signal of the oscillation circuit 41, the frequency of the low frequency component signal is added to the output signal of the oscillation circuit 41, In the opposite case, subtraction is performed.
  • the oscillation frequency of the reference signal generation circuit 55 oscillates. It becomes lower than the actual oscillation frequency of the circuit 41. Therefore, in order to obtain the actual oscillation frequency of the oscillation circuit 41, the frequency
  • the resolution of the low frequency counter 53 can be assigned to measure the frequency
  • the oscillation frequency of the reference signal generation circuit 55 is controlled by the controller 43, and the oscillation frequency can be set so that the difference frequency
  • the value of the determined frequency is stored in the controller 43.
  • the controller 43 calculates the film thickness and the film forming rate of the vapor deposition material deposited on the substrate W from the value of the obtained frequency using the arithmetic expression represented by the above equation (1).
  • a filter having the processing procedure shown in FIG. 4 is used Be That is, first, from the change of the oscillation frequency of the vibrator obtained from the film thickness sensor, a rate conversion value obtained by converting this into a film forming rate is obtained (step 101). Subsequently, the acquired rate conversion value is smoothed by, for example, moving average calculation (step S102), and the smoothed rate conversion value is output as a deposition rate (step 103).
  • FIG. 5 shows an example of the output when the sensor output shown in FIG. 3 is smoothed by moving average calculation.
  • the fluctuation time (T) becomes long. That is, in the smoothing of the output by the moving average processing as described above, for example, if bumping occurs even once, the entire average value is increased by the abnormal value output at that time. Therefore, in such smoothing processing, feedback control to the deposition source excessively reacts due to a sudden abnormal value, and as a result, there is a problem that the control is disturbed (runaway).
  • the controller 43 of the measurement unit 17 is configured as shown in FIG.
  • FIG. 6 is a functional block diagram showing the configuration of the controller 43. As shown in FIG. The controller 43 has a rate calculation unit 431, a median calculation unit 432, a smoothing processing unit 433 and an output unit 434.
  • the controller 43 can be typically realized by hardware elements used for a computer such as a central processing unit (CPU), a random access memory (RAM), a read only memory (ROM), and necessary software.
  • a CPU central processing unit
  • RAM random access memory
  • ROM read only memory
  • PLD Programmable Logic Device
  • FPGA Field Programmable Gate Array
  • DSP Digital Signal Processor
  • the rate calculation unit 431 is configured to calculate a rate conversion value for each unit time based on the oscillation frequency of the vibrator 20 measured in the measurement circuit 42.
  • the rate calculation unit 431 calculates a rate conversion value by, for example, the above equation (1).
  • the median calculation unit 432 is configured as a “first filter unit” that removes an abnormal value from the rate conversion value output from the rate calculation unit 431. That is, median value calculation unit 432 acquires the rate conversion value (for each unit time) output in a step-like manner from the rate calculation unit in the order of time series by a predetermined number of samples, and reduces the acquired limited number of sample data Outputs data (rate conversion value) located at the center when arranged in order.
  • the number of samples is not particularly limited, and can be arbitrarily set within a range that does not affect feedback control to the deposition source, for example.
  • FIGS. 7A and 7B are diagrams for explaining how to calculate the median in the case where the number of samples is an odd number.
  • the number of samples is five.
  • the median value in this case is "4" of "order 3".
  • 8A and 8B are diagrams for explaining how to calculate the median in the case where the number of samples is an even number.
  • the number of samples is six.
  • the median in this case is "3.5" which is an arithmetic mean value for "3" of "order 3" and "4" of "order 4".
  • the smoothing processing unit 433 is configured as a “second filter unit” that smoothes the rate conversion value (median value) output from the median calculation unit 432.
  • the smoothing processing unit 433 is typically configured by a moving average filter or a first-order low pass filter. Moving averages include simple moving averages, weighted moving averages, and the like. The number of samples is not particularly limited, and can be arbitrarily set within a range that does not affect feedback control to the deposition source, for example.
  • the output unit 434 generates and outputs a signal necessary for the processing of the subsequent stage based on the rate conversion value smoothed by the smoothing processing unit 433.
  • a display signal output to a monitor (not shown) as film forming rate information or film thickness information, a recording signal for recording the respective information on a predetermined recording medium, and a heating temperature of the vapor deposition material in the vapor deposition source 12
  • the control signal etc. which are output to the power supply unit 18 for controlling are included.
  • FIG. 9 is a flowchart showing the processing procedure of the controller 43.
  • the controller 43 first acquires the oscillation frequency of the vibrator 20 measured in the measurement circuit 42, and calculates the rate conversion value for each unit time in the rate calculation unit 431 (step 201).
  • the controller 43 removes the abnormal value by extracting the median from the rate conversion value output from the rate calculation unit 431 in the median calculation unit 432 (step 202).
  • the controller 43 causes the smoothing processor 433 to smooth the rate conversion value output from the median calculator 432 (step 203).
  • the controller 43 causes the output unit 434 to generate the predetermined signal based on the smoothed rate conversion value, and outputs the signal to the corresponding device (monitor, recording device, deposition source 12 or the like).
  • the filter according to the present embodiment includes the median value calculation unit 432 that removes an abnormal value from the rate conversion value output from the rate calculation unit 431. Therefore, the filter is smoothed based on the rate conversion value from which the abnormal value is removed.
  • the smoothing process in the quantization processing unit 433 can be performed. As a result, it is possible to suppress the decrease in the measurement accuracy of the deposition rate caused by the abnormal value. Moreover, when performing feedback control to the deposition source 12 based on the measured rate, it is possible to suppress excessive feedback control to the deposition source 12 caused by an abnormal value.
  • the abnormal value is removed from the rate conversion value before the smoothing process of the rate conversion value, the abnormal value is not included in the calculation of the smoothing process. it can. Therefore, it becomes possible to acquire rate information or film thickness information that is not affected by an abnormal value.
  • the actual data of the measured value including the abnormal value shown in FIG. 3 is shown in FIG. 10 after being processed by the filter of this embodiment.
  • the calculation time in the smoothing processing unit 433 can be shortened, and the delay time of feedback to the deposition source 12 due to smoothing can be shortened.
  • the delay time can be shortened by using the filter including the median calculation of the present embodiment as shown in FIG.
  • the number of samples for median calculation in median value calculation unit 432 and the number of samples for moving average calculation in smoothing processing unit 433 are not limited to the same numbers as described above, and can be appropriately set. is there.
  • the follow-up property is high although the rise is slow compared to the moving average calculation.
  • the deposition material is a material having high sublimation such as aluminum
  • the stability of the rate is relatively high, and even if the filter time is set to a relatively long time, the problem often does not occur. From this point of view, the rate measurement accuracy may be improved by increasing the number of median calculation points more than the number of moving average calculations.
  • FIGS. 12 to 14 are other experimental results explaining the difference between the filter according to the present embodiment including median value calculation and moving average calculation and the filter according to a comparative example including only moving average calculation.
  • Figure 12 shows the actual data of the deposition rate calculated based on the change in the resonant frequency of the vibrator (film thickness sensor), and the measured data when the actual data is processed using the filter according to the comparative example.
  • 13 and FIG. 14 show measurement data when the actual data is processed using the filter according to the present embodiment.
  • the number of moving average calculation points in the comparative example is 40 points, and the number of median value calculation and moving average calculation points in the present embodiment is 20 points. According to the present embodiment, it is possible to suppress the variation of the rate at the start of measurement to be smaller than that of the comparative example.
  • the fluctuation range of the rate can be reduced, and the fluctuation time when the rate instantaneously fluctuates greatly can be shortened. Therefore, according to the present embodiment, the measurement accuracy of the deposition rate is higher than that of the comparative example, and stable feedback control to the deposition source 12 can be realized.
  • FIG. 15 is a flowchart showing the processing procedure of the controller 43 in another embodiment of the present invention.
  • configurations different from the first embodiment will be mainly described, and the same configurations as those of the above-described embodiment are denoted by the same reference numerals, and the description thereof will be omitted or simplified.
  • the controller 43 is configured to smooth the rate conversion value before executing median value calculation of the rate conversion value output from the rate calculation unit 431 (steps 301 to 303). As a result, even if there is a relatively large change in the rate conversion value output from the rate calculation unit 431, the rate conversion value input to the median calculation unit 432 can be smoothed. It is possible to suppress the decrease.
  • the rate conversion value output from median value calculation unit 432 is smoothed in smoothing processing unit 433 as described above, and the obtained measurement data is output to an external device via output unit 434. (FIG. 6, steps 304 and 305).
  • the controller 43 further includes a smoothing processing unit that smoothes the rate conversion value output from the rate calculation unit 431 and outputs the smoothed value to the median value calculation unit 432 as a “third filter unit”.
  • the smoothing processing unit may have the same configuration as that of the smoothing processing unit 433 as the “second filter unit”, or may have a different configuration.
  • the configuration is not particularly limited as long as the smoothing processing unit as the “third filter unit” is a filter having a smoothing function, and typically, a moving average filter or a first-order lowpass similar to that of the second filter unit Composed of filters.
  • the number of samples is not particularly limited, and can be arbitrarily set within a range that does not affect feedback control to the deposition source, for example.
  • the number of samples used for the smoothing process in the third filter unit is set to 1/2 or less of the number of samples used for the median calculation. This makes it possible to ensure high-accuracy rate measurement while suppressing an increase in delay time.
  • the median operation and the moving average operation are configured to be performed at least once, but they may be repeatedly performed twice or more.
  • median calculation and moving average calculation may be further performed on the rate converted value subjected to median calculation and moving average calculation.
  • the vacuum evaporation apparatus was mentioned as an example and demonstrated as a film-forming apparatus, it is not restricted to this, This invention is applicable also to other film-forming apparatuses, such as a sputter apparatus.
  • the deposition source is composed of a sputtering cathode including a target.

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PCT/JP2015/003491 2014-07-15 2015-07-10 膜厚制御装置、膜厚制御方法および成膜装置 WO2016009626A1 (ja)

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CN201580033779.XA CN106471152B (zh) 2014-07-15 2015-07-10 膜厚控制装置、膜厚控制方法和成膜装置
JP2016534107A JP6060319B2 (ja) 2014-07-15 2015-07-10 膜厚制御装置、膜厚制御方法および成膜装置
KR1020167033200A KR102035143B1 (ko) 2014-07-15 2015-07-10 막 두께 제어 장치, 막 두께 제어 방법 및 성막 장치

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* Cited by examiner, † Cited by third party
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WO2019070426A1 (en) * 2017-10-05 2019-04-11 Applied Materials, Inc. CLASSIFICATION OF DEFECT DETECTION
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