JP5544060B2 - プラズマ特性を求める方法 - Google Patents
プラズマ特性を求める方法 Download PDFInfo
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- JP5544060B2 JP5544060B2 JP2007157356A JP2007157356A JP5544060B2 JP 5544060 B2 JP5544060 B2 JP 5544060B2 JP 2007157356 A JP2007157356 A JP 2007157356A JP 2007157356 A JP2007157356 A JP 2007157356A JP 5544060 B2 JP5544060 B2 JP 5544060B2
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- 238000000034 method Methods 0.000 title claims description 63
- 238000009826 distribution Methods 0.000 claims description 24
- 230000001419 dependent effect Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 146
- 238000012545 processing Methods 0.000 description 54
- 150000002500 ions Chemical class 0.000 description 44
- 239000007789 gas Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 12
- 238000005259 measurement Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 8
- 150000001793 charged compounds Chemical class 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 230000015654 memory Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000002847 impedance measurement Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000000611 regression analysis Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Description
Claims (15)
- 単一給電でプラズマに結合された第1波形の電流及び電圧情報のメトリックを得て、
前記単一給電でプラズマに結合された、第1波形とは異なる周波数を有する第2波形の電流及び電圧情報のメトリックを得て、
周波数の異なる波形からそれぞれ得たメトリックを用いて、少なくとも1つのプラズマ特性を求めることを含むプラズマ特性を求めるための方法。 - 少なくとも1つのプラズマ特性を求める工程が、プラズマのイオン質量を求めることを更に含む請求項1記載の方法。
- イオン質量を求める工程が、プラズマ内のイオン質量種の形態の分布を求めることを更に含む請求項2記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、プラズマの非対称性を求めることを更に含む請求項1記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、プラズマの電子温度を求めることを更に含む請求項1記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、プラズマ内の電子−分子衝突頻度を求めることを更に含む請求項1記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、周波数依存性モデルを用いてプラズマを分析することを更に含む請求項1記載の方法。
- 周波数依存性モデルがプラズマのインピーダンスモデルを更に含む請求項7記載の方法。
- プラズマを維持するために利用する第1電源から第1波形を発生させ、
プラズマの特性を制御するために利用する電源から第2波形を発生させることを更に含む請求項1記載の方法。 - プラズマを維持するために利用する第1電源から第1波形を発生させ、
プラズマの動作特性を顕著に変えることのない低出力診断用電源から第2波形を発生させることを更に含む請求項1記載の方法。 - 低出力診断用電源から第2波形を発生させることが、1ミリワット〜10ワットでプラズマに結合させることを更に含む請求項10記載の方法。
- 第2波形のメトリックを得ることが、プラズマ高調波波形のメトリックを得ることを更に含む請求項1記載の方法。
- 第1波形のメトリックを得ることが、第2プラズマ高調波波形のメトリックを得ることを更に含む請求項12記載の方法。
- 第1波形のメトリックを得ることが、プラズマを維持するために利用する第1電源から第1波形を発生させることを更に含む請求項12記載の方法。
- 第1波形のメトリックを得ることが、プラズマの動作特性を顕著に変えることのない低出力診断用電源から第1波形を発生させることを更に含む請求項12記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/424705 | 2006-06-16 | ||
US11/424,705 US7286948B1 (en) | 2006-06-16 | 2006-06-16 | Method for determining plasma characteristics |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007335875A JP2007335875A (ja) | 2007-12-27 |
JP2007335875A5 JP2007335875A5 (ja) | 2010-07-22 |
JP5544060B2 true JP5544060B2 (ja) | 2014-07-09 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007157356A Expired - Fee Related JP5544060B2 (ja) | 2006-06-16 | 2007-06-14 | プラズマ特性を求める方法 |
Country Status (4)
Country | Link |
---|---|
US (5) | US7286948B1 (ja) |
JP (1) | JP5544060B2 (ja) |
KR (1) | KR100871515B1 (ja) |
CN (1) | CN101090597B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100362619C (zh) | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
KR100784824B1 (ko) * | 2005-11-04 | 2007-12-14 | 한국표준과학연구원 | 플라즈마 진단장치 및 진단방법 |
US7286948B1 (en) * | 2006-06-16 | 2007-10-23 | Applied Materials, Inc. | Method for determining plasma characteristics |
JP4936492B2 (ja) * | 2008-03-25 | 2012-05-23 | 国立大学法人大阪大学 | 放電イオン化電流検出器 |
US8473089B2 (en) | 2009-06-30 | 2013-06-25 | Lam Research Corporation | Methods and apparatus for predictive preventive maintenance of processing chambers |
US8271121B2 (en) * | 2009-06-30 | 2012-09-18 | Lam Research Corporation | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
US8983631B2 (en) * | 2009-06-30 | 2015-03-17 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
US8618807B2 (en) | 2009-06-30 | 2013-12-31 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
US8295966B2 (en) * | 2009-06-30 | 2012-10-23 | Lam Research Corporation | Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber |
US8538572B2 (en) | 2009-06-30 | 2013-09-17 | Lam Research Corporation | Methods for constructing an optimal endpoint algorithm |
JP5740246B2 (ja) * | 2011-08-15 | 2015-06-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US9275916B2 (en) * | 2013-05-03 | 2016-03-01 | Infineon Technologies Ag | Removable indicator structure in electronic chips of a common substrate for process adjustment |
US10622197B2 (en) * | 2015-07-21 | 2020-04-14 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US10553411B2 (en) | 2015-09-10 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion collector for use in plasma systems |
US10727089B2 (en) * | 2016-02-12 | 2020-07-28 | Lam Research Corporation | Systems and methods for selectively etching film |
US10536130B2 (en) | 2017-08-29 | 2020-01-14 | Mks Instruments, Inc. | Balancing RF circuit and control for a cross-coupled SIMO distribution network |
US10636686B2 (en) * | 2018-02-27 | 2020-04-28 | Lam Research Corporation | Method monitoring chamber drift |
US11209478B2 (en) * | 2018-04-03 | 2021-12-28 | Applied Materials, Inc. | Pulse system verification |
CN109165400B (zh) * | 2018-07-06 | 2021-10-01 | 东南大学 | 一种聚焦离子束刻蚀加工工艺参数的设计方法 |
KR20230031836A (ko) * | 2020-07-08 | 2023-03-07 | 램 리써치 코포레이션 | 복수의 생성기들 및 위상 제어를 사용하는 이온 에너지 전달을 위한 프로세스 제어 |
WO2022097760A1 (ko) * | 2020-11-03 | 2022-05-12 | 광운대학교 산학협력단 | 플라즈마 진단 시스템 및 방법 |
KR102340564B1 (ko) * | 2021-02-19 | 2021-12-20 | 한국표준과학연구원 | 플라즈마 이온 밀도 측정 장치와 이를 이용한 플라즈마 진단 장치 |
CN113657593B (zh) * | 2021-07-30 | 2024-02-02 | 西安理工大学 | 一种基于bp神经网络的等离子体参数诊断方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325019A (en) | 1992-08-21 | 1994-06-28 | Sematech, Inc. | Control of plasma process by use of harmonic frequency components of voltage and current |
US5467013A (en) * | 1993-12-07 | 1995-11-14 | Sematech, Inc. | Radio frequency monitor for semiconductor process control |
JP3483327B2 (ja) * | 1994-11-29 | 2004-01-06 | アネルバ株式会社 | プラズマ処理方法 |
US6197116B1 (en) * | 1996-08-29 | 2001-03-06 | Fujitsu Limited | Plasma processing system |
JP3349455B2 (ja) * | 1998-09-30 | 2002-11-25 | 宮崎沖電気株式会社 | 半導体製造装置のための管理方法および管理システム |
JP2000260595A (ja) * | 1999-03-11 | 2000-09-22 | Hitachi Ltd | プラズマ処理装置 |
JP3665265B2 (ja) * | 2000-12-28 | 2005-06-29 | 株式会社日立製作所 | プラズマ処理装置 |
WO2002075332A1 (en) * | 2001-03-16 | 2002-09-26 | Tokyo Electron Limited | Impedance monitoring system and method |
WO2002097855A1 (en) * | 2001-05-29 | 2002-12-05 | Tokyo Electron Limited | Plasma processing apparatus and method |
JP3977114B2 (ja) * | 2002-03-25 | 2007-09-19 | 株式会社ルネサステクノロジ | プラズマ処理装置 |
US6879870B2 (en) * | 2002-04-16 | 2005-04-12 | Steven C. Shannon | Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber |
KR100628392B1 (ko) * | 2002-06-05 | 2006-09-26 | 동경 엘렉트론 주식회사 | 처리 장치의 다변량 해석 모델식 작성 방법, 처리장치용의 다변량 해석 방법, 처리 장치의 제어 장치, 처리장치의 제어 시스템 |
TWI264043B (en) * | 2002-10-01 | 2006-10-11 | Tokyo Electron Ltd | Method and system for analyzing data from a plasma process |
JP2004128236A (ja) * | 2002-10-03 | 2004-04-22 | Sony Corp | エッチング装置およびエッチング方法 |
JP5404984B2 (ja) * | 2003-04-24 | 2014-02-05 | 東京エレクトロン株式会社 | プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置 |
US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
US7169625B2 (en) * | 2003-07-25 | 2007-01-30 | Applied Materials, Inc. | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring |
US6902646B2 (en) * | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
US6849561B1 (en) * | 2003-08-18 | 2005-02-01 | Asm Japan K.K. | Method of forming low-k films |
US7015414B2 (en) * | 2003-09-30 | 2006-03-21 | Tokyo Electron Limited | Method and apparatus for determining plasma impedance |
JP4448335B2 (ja) * | 2004-01-08 | 2010-04-07 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US7105075B2 (en) * | 2004-07-02 | 2006-09-12 | Advanced Energy Industries, Inc. | DC power supply utilizing real time estimation of dynamic impedance |
US20060180570A1 (en) * | 2005-02-14 | 2006-08-17 | Mahoney Leonard J | Application of in-situ plasma measurements to performance and control of a plasma processing system |
US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
CN100411496C (zh) * | 2005-09-21 | 2008-08-13 | 大连理工大学 | 一种实现脉冲电源与等离子体负载间匹配的方法 |
US7286948B1 (en) * | 2006-06-16 | 2007-10-23 | Applied Materials, Inc. | Method for determining plasma characteristics |
-
2006
- 2006-06-16 US US11/424,705 patent/US7286948B1/en not_active Expired - Fee Related
- 2006-12-29 US US11/617,802 patent/US7440859B2/en not_active Expired - Fee Related
-
2007
- 2007-06-05 US US11/758,299 patent/US7620511B2/en not_active Expired - Fee Related
- 2007-06-08 KR KR1020070055985A patent/KR100871515B1/ko not_active IP Right Cessation
- 2007-06-14 JP JP2007157356A patent/JP5544060B2/ja not_active Expired - Fee Related
- 2007-06-15 CN CN2007101067418A patent/CN101090597B/zh not_active Expired - Fee Related
-
2009
- 2009-01-16 US US12/355,130 patent/US7848898B2/en not_active Expired - Fee Related
- 2009-01-16 US US12/355,108 patent/US20090132189A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7848898B2 (en) | 2010-12-07 |
US7440859B2 (en) | 2008-10-21 |
KR100871515B1 (ko) | 2008-12-05 |
US20090132189A1 (en) | 2009-05-21 |
US20070294043A1 (en) | 2007-12-20 |
CN101090597A (zh) | 2007-12-19 |
CN101090597B (zh) | 2012-07-04 |
JP2007335875A (ja) | 2007-12-27 |
US7286948B1 (en) | 2007-10-23 |
US20070289359A1 (en) | 2007-12-20 |
US20090130856A1 (en) | 2009-05-21 |
US7620511B2 (en) | 2009-11-17 |
KR20070120027A (ko) | 2007-12-21 |
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