JP2007335875A - プラズマ特性を求める方法 - Google Patents
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Abstract
【解決手段】一実施形態において、プラズマ特性を求めるための方法は、プラズマに異なる周波数で結合された第1及び第2波形の電流及び電圧情報のメトリックを得て、周波数の異なる波形のそれぞれから得たメトリックを用いて少なくとも1つのプラズマ特性を求めることを含む。別の実施形態において、本方法は周波数の関数としてのプラズマのプラズマインピーダンスモデルを提供し、モデルを用いて少なくとも1つのプラズマ特性を求めることを含む。更に別の実施形態において、本方法は周波数の関数としてのプラズマのプラズマインピーダンスモデルを提供し、プラズマに結合され、少なくとも2つの異なる周波数を有する波形について電流と電圧を測定し、モデルと測定した波形の電流と電圧とからプラズマのイオン質量を求めることを含む。
【選択図】図2
Description
Claims (29)
- プラズマに結合された第1波形の電流及び電圧情報のメトリックを得て、
プラズマに結合された、第1波形とは異なる周波数を有する第2波形の電流及び電圧情報のメトリックを得て、
周波数の異なる波形からそれぞれ得たメトリックを用いて、少なくとも1つのプラズマ特性を求めることを含むプラズマ特性を求めるための方法。 - 少なくとも1つのプラズマ特性を求める工程が、プラズマのイオン質量を求めることを更に含む請求項1記載の方法。
- イオン質量を求める工程が、プラズマ内のイオン質量種の分布を求めることを更に含む請求項2記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、プラズマの非対称性を求めることを更に含む請求項1記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、プラズマの電子温度を求めることを更に含む請求項1記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、プラズマ内の電子−分子衝突頻度を求めることを更に含む請求項1記載の方法。
- 少なくとも1つのプラズマ特性を求める工程が、周波数依存性モデルを用いてプラズマを分析することを更に含む請求項1記載の方法。
- 周波数依存性モデルがプラズマのインピーダンスモデルを更に含む請求項7記載の方法。
- プラズマを維持するために利用する第1電源から第1波形を発生させ、
プラズマの特性を制御するために利用する電源から第2波形を発生させることを更に含む請求項1記載の方法。 - プラズマを維持するために利用する第1電源から第1波形を発生させ、
プラズマの動作特性を顕著に変えることのない低出力診断用電源から第2波形を発生させることを更に含む請求項1記載の方法。 - 低出力診断用電源から第2波形を発生させることが、約1ミリワット〜約10ワットでプラズマに結合させることを更に含む請求項10記載の方法。
- 第2波形のメトリックを得ることが、プラズマ高調波波形のメトリックを得ることを更に含む請求項1記載の方法。
- 第1波形のメトリックを得ることが、第2プラズマ高調波波形のメトリックを得ることを更に含む請求項12記載の方法。
- 第1波形のメトリックを得ることが、プラズマを維持するために利用する第1電源から第1波形を発生させることを更に含む請求項12記載の方法。
- 第1波形のメトリックを得ることが、プラズマの動作特性を顕著に変えることのない低出力診断用電源から第1波形を発生させることを更に含む請求項12記載の方法。
- プラズマのプラズマインピーダンスモデルを周波数の関数として提供し、
モデルを用いて少なくとも1つのプラズマ特性を求めることを更に含むプラズマ特性を求めるための方法。 - 少なくとも1つのプラズマ特性を求める工程が、プラズマに結合された、周波数が異なるRF波形の電流及び電圧情報を得ることを更に含む請求項16記載の方法。
- RF波形の電流及び電圧情報を得る工程が、プラズマ高調波波形のメトリックを測定することを更に含む請求項18記載の方法。
- RF波形の電流及び電圧情報を得る工程が、プラズマの動作特性を顕著に変えることのない低出力診断用電源により供給された波形のメトリックを測定することを更に含む請求項18記載の方法。
- RF波形の電流及び電圧情報を得る工程が、プラズマを維持するために利用する複数のRF電源により供給された波形のメトリックを測定することを更に含む請求項18記載の方法。
- RF波形の電流及び電圧情報を得る工程が、プラズマのイオン質量、プラズマ内のイオン質量種の分布、プラズマの非対称性、プラズマの電子温度、プラズマ内の電子−分子衝突頻度の少なくとも1つを求めることを更に含む請求項18記載の方法。
- RF波形の電流及び電圧情報を得る工程が、プラズマ内における塩素(Cl)種の分布を求めることを更に含む請求項18記載の方法。
- プラズマのプラズマインピーダンスモデルを周波数の関数として提供し、
プラズマに結合された、少なくとも2つの異なる周波数を有するRF波形の電流及び電圧を測定し、
モデルと測定した波形の電流と電圧とからプラズマのイオン質量を求めることを含むプラズマ特性を求めるための方法。 - プラズマのイオン質量を求める工程が、モデルと測定した波形の電流と電圧とからプラズマ内の電子−分子衝突頻度を求めることを更に含む請求項23記載の方法。
- 波形の電流と電圧を測定する工程が、高調波波形を測定することを更に含む請求項23記載の方法。
- 波形の電流と電圧を測定する工程が、プラズマの動作特性を顕著に変化させない低出力診断用電源により供給された波形のメトリックを測定することを更に含む請求項23記載の方法。
- 波形の電流と電圧を測定する工程が、プラズマを維持するために利用する複数のRF電源により供給された波形のメトリックを測定することを更に含む請求項23記載の方法。
- プラズマのイオン質量を求める工程が、プラズマ内の二原子種間の分布を求めることを更に含む請求項23記載の方法。
- プラズマのイオン質量を求める工程が、プラズマ内の処理ガスフラグメント間の分布を求めることを更に含む請求項23記載の方法。
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US11/424,705 US7286948B1 (en) | 2006-06-16 | 2006-06-16 | Method for determining plasma characteristics |
US11/424705 | 2006-06-16 |
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JP2007335875A true JP2007335875A (ja) | 2007-12-27 |
JP2007335875A5 JP2007335875A5 (ja) | 2010-07-22 |
JP5544060B2 JP5544060B2 (ja) | 2014-07-09 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022010875A1 (en) * | 2020-07-08 | 2022-01-13 | Lam Research Corporation | Process control for ion energy delivery using multiple generators and phase control |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100362619C (zh) | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
KR100784824B1 (ko) * | 2005-11-04 | 2007-12-14 | 한국표준과학연구원 | 플라즈마 진단장치 및 진단방법 |
US7286948B1 (en) * | 2006-06-16 | 2007-10-23 | Applied Materials, Inc. | Method for determining plasma characteristics |
WO2009119050A1 (ja) * | 2008-03-25 | 2009-10-01 | 国立大学法人大阪大学 | 放電イオン化電流検出器 |
US8295966B2 (en) * | 2009-06-30 | 2012-10-23 | Lam Research Corporation | Methods and apparatus to predict etch rate uniformity for qualification of a plasma chamber |
US8473089B2 (en) | 2009-06-30 | 2013-06-25 | Lam Research Corporation | Methods and apparatus for predictive preventive maintenance of processing chambers |
US8983631B2 (en) * | 2009-06-30 | 2015-03-17 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
US8538572B2 (en) | 2009-06-30 | 2013-09-17 | Lam Research Corporation | Methods for constructing an optimal endpoint algorithm |
US8618807B2 (en) | 2009-06-30 | 2013-12-31 | Lam Research Corporation | Arrangement for identifying uncontrolled events at the process module level and methods thereof |
US8271121B2 (en) * | 2009-06-30 | 2012-09-18 | Lam Research Corporation | Methods and arrangements for in-situ process monitoring and control for plasma processing tools |
JP5740246B2 (ja) * | 2011-08-15 | 2015-06-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP5968130B2 (ja) * | 2012-07-10 | 2016-08-10 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US9275916B2 (en) * | 2013-05-03 | 2016-03-01 | Infineon Technologies Ag | Removable indicator structure in electronic chips of a common substrate for process adjustment |
US10622197B2 (en) * | 2015-07-21 | 2020-04-14 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US10553411B2 (en) | 2015-09-10 | 2020-02-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion collector for use in plasma systems |
US10727089B2 (en) * | 2016-02-12 | 2020-07-28 | Lam Research Corporation | Systems and methods for selectively etching film |
US10536130B2 (en) | 2017-08-29 | 2020-01-14 | Mks Instruments, Inc. | Balancing RF circuit and control for a cross-coupled SIMO distribution network |
US10636686B2 (en) * | 2018-02-27 | 2020-04-28 | Lam Research Corporation | Method monitoring chamber drift |
US11209478B2 (en) * | 2018-04-03 | 2021-12-28 | Applied Materials, Inc. | Pulse system verification |
CN109165400B (zh) * | 2018-07-06 | 2021-10-01 | 东南大学 | 一种聚焦离子束刻蚀加工工艺参数的设计方法 |
WO2022097760A1 (ko) * | 2020-11-03 | 2022-05-12 | 광운대학교 산학협력단 | 플라즈마 진단 시스템 및 방법 |
KR102340564B1 (ko) * | 2021-02-19 | 2021-12-20 | 한국표준과학연구원 | 플라즈마 이온 밀도 측정 장치와 이를 이용한 플라즈마 진단 장치 |
CN113657593B (zh) * | 2021-07-30 | 2024-02-02 | 西安理工大学 | 一种基于bp神经网络的等离子体参数诊断方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000260595A (ja) * | 1999-03-11 | 2000-09-22 | Hitachi Ltd | プラズマ処理装置 |
JP2002203835A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Ltd | プラズマ処理装置 |
JP2004128236A (ja) * | 2002-10-03 | 2004-04-22 | Sony Corp | エッチング装置およびエッチング方法 |
JP2004534351A (ja) * | 2001-03-16 | 2004-11-11 | 東京エレクトロン株式会社 | インピーダンスをモニターするシステム並びに方法 |
WO2005034183A2 (en) * | 2003-09-30 | 2005-04-14 | Tokyo Electron Limited | Method and apparatus for determining plasma impedance |
JP2005228727A (ja) * | 2003-04-24 | 2005-08-25 | Tokyo Electron Ltd | プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325019A (en) | 1992-08-21 | 1994-06-28 | Sematech, Inc. | Control of plasma process by use of harmonic frequency components of voltage and current |
US5467013A (en) * | 1993-12-07 | 1995-11-14 | Sematech, Inc. | Radio frequency monitor for semiconductor process control |
JP3483327B2 (ja) * | 1994-11-29 | 2004-01-06 | アネルバ株式会社 | プラズマ処理方法 |
US6197116B1 (en) * | 1996-08-29 | 2001-03-06 | Fujitsu Limited | Plasma processing system |
JP3349455B2 (ja) * | 1998-09-30 | 2002-11-25 | 宮崎沖電気株式会社 | 半導体製造装置のための管理方法および管理システム |
WO2002097855A1 (en) * | 2001-05-29 | 2002-12-05 | Tokyo Electron Limited | Plasma processing apparatus and method |
JP3977114B2 (ja) * | 2002-03-25 | 2007-09-19 | 株式会社ルネサステクノロジ | プラズマ処理装置 |
US6879870B2 (en) * | 2002-04-16 | 2005-04-12 | Steven C. Shannon | Method and apparatus for routing harmonics in a plasma to ground within a plasma enhanced semiconductor wafer processing chamber |
TWI276162B (en) * | 2002-06-05 | 2007-03-11 | Tokyo Electron Ltd | Multi-variable analysis model forming method of processing apparatus, multi-variable analysis method for processing apparatus, control apparatus of processing apparatus, and control system of processing apparatus |
TWI264043B (en) * | 2002-10-01 | 2006-10-11 | Tokyo Electron Ltd | Method and system for analyzing data from a plasma process |
US7247218B2 (en) * | 2003-05-16 | 2007-07-24 | Applied Materials, Inc. | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power |
US7169625B2 (en) * | 2003-07-25 | 2007-01-30 | Applied Materials, Inc. | Method for automatic determination of semiconductor plasma chamber matching and source of fault by comprehensive plasma monitoring |
US6902646B2 (en) * | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
US6849561B1 (en) * | 2003-08-18 | 2005-02-01 | Asm Japan K.K. | Method of forming low-k films |
JP4448335B2 (ja) * | 2004-01-08 | 2010-04-07 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
US7105075B2 (en) * | 2004-07-02 | 2006-09-12 | Advanced Energy Industries, Inc. | DC power supply utilizing real time estimation of dynamic impedance |
US20060180570A1 (en) * | 2005-02-14 | 2006-08-17 | Mahoney Leonard J | Application of in-situ plasma measurements to performance and control of a plasma processing system |
US7359177B2 (en) * | 2005-05-10 | 2008-04-15 | Applied Materials, Inc. | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output |
CN100411496C (zh) * | 2005-09-21 | 2008-08-13 | 大连理工大学 | 一种实现脉冲电源与等离子体负载间匹配的方法 |
US7286948B1 (en) * | 2006-06-16 | 2007-10-23 | Applied Materials, Inc. | Method for determining plasma characteristics |
-
2006
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- 2006-12-29 US US11/617,802 patent/US7440859B2/en not_active Expired - Fee Related
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2007
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- 2007-06-08 KR KR1020070055985A patent/KR100871515B1/ko not_active IP Right Cessation
- 2007-06-14 JP JP2007157356A patent/JP5544060B2/ja not_active Expired - Fee Related
- 2007-06-15 CN CN2007101067418A patent/CN101090597B/zh not_active Expired - Fee Related
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2009
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- 2009-01-16 US US12/355,108 patent/US20090132189A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000260595A (ja) * | 1999-03-11 | 2000-09-22 | Hitachi Ltd | プラズマ処理装置 |
JP2002203835A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Ltd | プラズマ処理装置 |
JP2004534351A (ja) * | 2001-03-16 | 2004-11-11 | 東京エレクトロン株式会社 | インピーダンスをモニターするシステム並びに方法 |
JP2004128236A (ja) * | 2002-10-03 | 2004-04-22 | Sony Corp | エッチング装置およびエッチング方法 |
JP2005228727A (ja) * | 2003-04-24 | 2005-08-25 | Tokyo Electron Ltd | プラズマモニタリング方法、プラズマモニタリング装置及びプラズマ処理装置 |
WO2005034183A2 (en) * | 2003-09-30 | 2005-04-14 | Tokyo Electron Limited | Method and apparatus for determining plasma impedance |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022010875A1 (en) * | 2020-07-08 | 2022-01-13 | Lam Research Corporation | Process control for ion energy delivery using multiple generators and phase control |
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US7848898B2 (en) | 2010-12-07 |
US20070294043A1 (en) | 2007-12-20 |
US20090132189A1 (en) | 2009-05-21 |
JP5544060B2 (ja) | 2014-07-09 |
US7286948B1 (en) | 2007-10-23 |
CN101090597A (zh) | 2007-12-19 |
KR20070120027A (ko) | 2007-12-21 |
US7620511B2 (en) | 2009-11-17 |
US20070289359A1 (en) | 2007-12-20 |
KR100871515B1 (ko) | 2008-12-05 |
US7440859B2 (en) | 2008-10-21 |
US20090130856A1 (en) | 2009-05-21 |
CN101090597B (zh) | 2012-07-04 |
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