WO2016004709A1 - Oled显示器及其制备方法 - Google Patents

Oled显示器及其制备方法 Download PDF

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Publication number
WO2016004709A1
WO2016004709A1 PCT/CN2014/089908 CN2014089908W WO2016004709A1 WO 2016004709 A1 WO2016004709 A1 WO 2016004709A1 CN 2014089908 W CN2014089908 W CN 2014089908W WO 2016004709 A1 WO2016004709 A1 WO 2016004709A1
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electrode
buffer layer
oled display
substrate
sub
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PCT/CN2014/089908
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English (en)
French (fr)
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张鹏
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京东方科技集团股份有限公司
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Priority to US14/652,647 priority Critical patent/US9711577B2/en
Publication of WO2016004709A1 publication Critical patent/WO2016004709A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • Embodiments of the present invention relate to an OLED display and a method of fabricating the same.
  • OLED organic light emitting diode
  • OLEDs can be classified into top-emitting OLED displays and bottom-emitting OLED displays.
  • a transparent anode 11, an organic material functional layer 30, and an opaque metal cathode 12, which are sequentially disposed on the base substrate 10, are included. Since the anode of the bottom-emitting OLED display is transparent, the microcavity effect is not significant in the bottom-emitting OLED display, and the viewing angle of the bottom emission is larger than that of the top emission.
  • the viewing angle of the bottom-emitting OLED display is larger than that of the top-emitting OLED display, in actual use, it is desirable to use the OLED display to have a larger viewing angle to meet the needs of different angle viewing.
  • an OLED display includes a plurality of sub-pixel units, each of the sub-pixel units including a first electrode, an organic material functional layer, and a second electrode, which are sequentially disposed on a base substrate;
  • the sub-pixel unit further includes: a first buffer layer disposed between the base substrate and the first electrode;
  • a surface of the first buffer layer corresponding to the first electrode and away from the substrate substrate has a concave shape
  • the first electrode is a transparent electrode
  • the second electrode is an opaque metal electrode
  • the first electrode, the organic material functional layer, and the second electrode are conformally formed at the recess of the first buffer layer.
  • the surface of the recess of the first buffer layer is a curved surface that is curved toward the side of the substrate substrate.
  • the surface is a curved surface.
  • the first buffer layer has a thickness of 2 ⁇ m to 5 ⁇ m.
  • the material of the first buffer layer comprises polyimide.
  • the sub-pixel unit further includes a thin film transistor disposed between the base substrate and the first buffer layer.
  • the first electrode is electrically connected to a drain of the thin film transistor through at least a via provided on the first buffer layer.
  • the OLED display further includes a second buffer layer disposed between the base substrate and the thin film transistor, the second buffer layer being in contact with the substrate substrate.
  • the material of the second buffer layer includes at least one of silicon oxide and silicon nitride.
  • a method of fabricating an OLED display comprising:
  • a first buffer layer on the base substrate; wherein, in a region corresponding to the first electrode in each of the sub-pixel units, a surface of the first buffer layer away from a side of the substrate substrate has a concave arc shape shape;
  • the first electrode is a transparent electrode
  • the second electrode is an opaque metal electrode
  • the forming the first buffer layer on the base substrate comprises:
  • the first buffer layer film corresponding to the opening of the mask is dry etched by a shielding effect of the patterned mask to form the first buffer layer having a concave shape on the surface;
  • the opening of the mask corresponds to a predetermined area of the sub-pixel unit, and an area of the opening near a side of the first buffer layer film is larger than an area away from a side of the first buffer layer film.
  • the method further includes forming a thin film transistor between the base substrate and the first buffer layer in each of the sub-pixel units.
  • the dry etching of the first buffer layer film includes plasma etching.
  • An embodiment of the present invention provides a surface having a recessed arc shape by a surface of the first buffer layer and the first electrode corresponding portion and away from the substrate substrate, so that the surface of the second electrode Forming an arcuate shape having a depression such that light emitted from the luminescent layer of the functional layer of the organic material, when reaching the opaque second electrode surface, causes the reflected light to diverge more from the side of the transparent first electrode, thereby making the difference
  • the exit rate of the angled light increases, which in turn increases the viewing angle and luminous intensity of the OLED display.
  • FIG. 1 is a schematic structural view of an OLED display provided by the prior art
  • FIG. 2 is a schematic structural diagram 1 of an OLED display according to an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of an OLED display providing an increased viewing angle of an outgoing light according to an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram 2 of an OLED display according to an embodiment of the present disclosure.
  • FIG. 5 is a schematic structural diagram 3 of an OLED display according to an embodiment of the present disclosure.
  • FIGS. 6-8 are schematic diagrams showing a process of forming a first buffer layer having a curved arc shape on a surface according to an embodiment of the present invention.
  • the OLED display 01 includes a plurality of sub-pixel units, and each of the sub-pixel units includes a substrate disposed in sequence. a first electrode 20 on the substrate 10, an organic material functional layer 30, and a second electrode 40; further the sub-pixel unit further includes: a first buffer disposed between the base substrate 10 and the first electrode 20 Layer 50. a surface of the first buffer layer 50 corresponding to the first electrode 20 and away from the substrate substrate 10 has a concave arc shape; the first electrode 20 is a transparent electrode, and the second electrode 40 is an opaque metal electrode.
  • the recess having an arc shape means that the surface of the first buffer layer 50 at the recess is a curved surface which is curved toward the substrate substrate side.
  • the surface of the first buffer layer 50 at the recess may be any suitable curved surface or other suitable shape that is curved toward the substrate substrate side.
  • the interface between the organic material functional layer 30 and the second electrode 40 is a plane, and light emitted from the light-emitting layer of the organic material functional layer 30 is incident on the light in a direction approximately perpendicular to the interface.
  • the surface of the second electrode 40, then the reflected light is also emitted from the first electrode 20 in a direction perpendicular to the interface, that is, for example, the outgoing light 1 in FIG.
  • the interface between the organic material functional layer 30 and the second electrode 40 is an arc-shaped interface protruding toward the first electrode 20.
  • the first electrode 20, the organic material functional layer 30, and the second electrode 40 are conformally formed in the recess of the first buffer layer, and therefore naturally have a shape curved toward the substrate substrate side.
  • the incident light rays form a certain incidence with the normal direction.
  • the angle, according to the principle of reflection, the reflected light will also exit from the first electrode 20 at an angle, that is, for example, the outgoing light 2 in FIG.
  • the material of the first buffer layer 50 is not limited as long as it can form an arc shape having a recess from a side surface of the base substrate 10.
  • an insulating layer is disposed between the first buffer layer 50 and the first electrode 20, and is specifically set according to actual conditions, and details are not described herein again.
  • the first buffer layer 50 is located below the first electrode 20, that is, the first buffer layer 50 located below is prepared to be formed, and is formed after the first electrode 20 located above, and thus, in the first buffer
  • the upper surface of the layer 50 corresponding to the first electrode 20 has a concave curved shape In the case where the first electrode 20 is formed thereon, it also has a concave arc shape, and the organic material functional layer 30 and the second electrode 40 located above the first electrode 20 also have a concave arc shape.
  • the first electrode 20 can be an anode or a cathode
  • the second electrode 40 can be a cathode or an anode. That is, if the first electrode 20 is an anode, the second electrode 40 is a cathode; if the first electrode 20 is a cathode, the second electrode 40 is an anode.
  • the organic material functional layer 30 may include at least a light-emitting layer, and further may further include an electron transport layer and a hole transport layer, on the basis of which the organic material may be improved in efficiency of injecting the light-emitting layer into the light-emitting layer.
  • the functional layer 30 may further include an electron injection layer disposed between the cathode and the electron transport layer, and a hole injection layer disposed between the hole transport layer and the anode.
  • the illuminating layer of the three sub-pixel units in one pixel unit may include a luminescent material of red, green, and blue light; of course, the luminescent layer may include only luminescent materials of white light, which is not limited herein.
  • the OLED display 01 may be a passive matrix type display or an active matrix type display, which is not limited herein.
  • the adjacent first electrodes 20 may be separated by a pixel isolation layer, and details are not described herein again.
  • An embodiment of the present invention provides an OLED display 01, including a plurality of sub-pixel units, each of the sub-pixel units including a first electrode 20, an organic material functional layer 30, and a second electrode sequentially disposed on the base substrate 10. 40. Further, the sub-pixel unit further includes: a first buffer layer 50 disposed between the base substrate 10 and the first electrode 20. a surface of the first buffer layer 50 corresponding to the first electrode 20 and away from the substrate substrate 10 has a concave arc shape; the first electrode 20 is a transparent electrode, and the second electrode 40 is an opaque metal electrode.
  • the first buffer layer 50 is corresponding to the first electrode 20 and
  • the surface away from the side of the base substrate 10 is disposed to have a concave arc shape such that the surface of the second electrode 40 is formed into an arc shape having a depression such that it is emitted from the light emitting layer of the organic material functional layer 30.
  • the first buffer layer 50 may have a thickness of 2 ⁇ m to 5 ⁇ m.
  • the OLED display 01 is not made too thick to meet the market demand for thinning, and the first buffer layer 50 having a concave curved shape surface cannot be prepared because it is too thin.
  • the material of the first buffer layer 50 may be polyimide (PI).
  • the structure of the PI is not dense.
  • the first buffer layer 50 having a concave curved surface is formed by, for example, dry etching, the portion of the PI material to be recessed can be easily etched. Drop and etch the desired effect.
  • the OLED display 01 provided by the embodiment of the present invention is an active matrix OLED display, that is, as shown in FIG. 4, considering that the passive matrix is applied to a large-size display.
  • Each of the sub-pixel units of the OLED display 01 may further include a thin film transistor 60 disposed between the base substrate 10 and the first buffer layer 50.
  • the thin film transistor 60 includes a gate 601, a gate insulating layer 602, a semiconductor active layer 603, a source 604, and a drain 605; and the thin film transistor 60 may be a top gate type or a bottom gate type.
  • the OLED display 01 further includes a gate line electrically connected to the gate 601, a gate line lead (not shown), and the like, and a data line and a data line lead electrically connected to the source 604 (Fig. Not identified in the middle).
  • the embodiment of the present invention is, for example, electrically connecting the drain 605 to the first electrode 20, and the first electrode 20 passes through a via provided on the first buffer layer 50 and the The drain 605 of the thin film transistor is electrically connected.
  • the OLED display 01 further includes a substrate disposed on the substrate
  • the second buffer layer 70 between the 10 and the thin film transistor 60 is in contact with the base substrate 10.
  • the second buffer layer 70 may be a single layer or a multilayer structure, and the material thereof may be, for example, SiN (silicon nitride), SiOx (silicon oxide), or the like.
  • the second buffer layer 70 helps to improve the surface flatness and adhesion of the base substrate 10, and also contributes to improvement of water vapor permeability resistance.
  • the OLED display 01 should further include an encapsulation layer for encapsulating an organic material, wherein the encapsulation layer may be a thin film package or may be The substrate package is not limited herein.
  • the embodiment of the invention further provides a method for preparing an OLED display, the OLED display 01 comprising a plurality of sub-pixel units.
  • the method includes the following steps:
  • a first buffer layer 50 is formed on the base substrate 10; wherein, in a region corresponding to the first electrode 20 in each of the sub-pixel units, the first buffer layer 50 is away from the The surface on one side of the base substrate 10 has a concave arc shape.
  • the first electrode 20, the organic material functional layer 30, and the second layer are sequentially formed in a region of each of the sub-pixel units. Electrode 40.
  • the first electrode 20 is a transparent electrode
  • the second electrode 40 is an opaque metal electrode.
  • the method of forming the first buffer layer 50 having a curved arcuate shape on the surface is not limited herein.
  • the upper surface of the corresponding portion of the first buffer layer 50 and the first electrode 20 has a recess.
  • the first electrode 20 formed thereon also has a concave arc shape
  • the organic material functional layer 30 and the second electrode 40 located above the first electrode 20 also have a concave arc. Shape.
  • An embodiment of the present invention provides a method for fabricating an OLED display including a plurality of sub-pixel units, including: forming a first buffer layer 50 on a substrate substrate 10; wherein, in each of the sub-pixel units, a corresponding first electrode a region of the first buffer layer 50 away from the surface of the base substrate 10 having a concave arc shape; on the substrate on which the first buffer layer 50 is formed, at each of the sub-pixels a region of the cell, which sequentially forms the first electrode 20, the organic material functional layer 30, and the The two electrodes 40; wherein the first electrode 20 is a transparent electrode, and the second electrode 40 is an opaque metal electrode.
  • a curved shape having a recess is formed on a surface of the first buffer layer 50 corresponding to the first electrode 20 and away from the substrate 10 to make the second electrode 40
  • the surface is formed into an arcuate shape having a depression such that light emitted from the light-emitting layer of the organic material functional layer 30 causes the reflected light to be more divergent from the side of the transparent first electrode 20 when it reaches the surface of the opaque second electrode 40.
  • the emission is such that the exit rate of light at different angles is increased, thereby increasing the viewing angle and luminous intensity of the OLED display 01.
  • step S10 may specifically include the following processes:
  • a first buffer layer film 50a is formed on the base substrate 10.
  • the structure of the PI is not dense, when the first buffer layer 50 having a concave curved surface is formed by dry etching as described below, the portion of the PI material that needs to be recessed can be easily etched away. And the desired effect is etched, and the material of the first buffer layer film 50a is a PI material.
  • the first buffer layer film 50a corresponding to the opening 801 of the mask is dry etched by the shielding action of the patterned mask 80, as shown in FIG.
  • the surface has the first buffer layer 50 having a concave curved shape.
  • the opening 801 of the mask corresponds to a predetermined area of the sub-pixel unit, and an area of the opening 801 adjacent to the side of the first buffer layer film 50a is larger than a side away from the side of the first buffer layer film 50a. area.
  • the dry etching is a technique of performing thin film etching by using a plasma.
  • a mask 80 having a shape as shown in FIG. 7 is used as a shield, that is, the mask 80 is used.
  • the shadow effect the region blocked by the mask plate 80 vertically (the mask plate 80 has a gap with the first buffer layer film 50a in this region) has a small plasma concentration, so the closer to the edge of the mask 80
  • the etching effect is less obvious, and the etched arc structure is shallower; while the area of the opening 801 of the reticle is directly entered by the plasma, the plasma concentration thereof is large, and the plasma concentration is large.
  • the effect of the etch is also more pronounced and the depth of the etch will be deeper.
  • the predetermined area is an area larger than a certain recess depth in a region of the corresponding first electrode 20 of each of the sub-pixel units.
  • Dry etching the first buffer layer film 50a corresponding to the opening 801 of the mask means that the plasma entering from the opening 801 is as long as the mask 80 and the first buffer layer film There is a gap between 50a, and the plasma can be reached, and the first buffer layer film 50a can be etched.
  • the first buffer layer 50 may have a thickness of 2 ⁇ m to 5 ⁇ m.
  • the OLED display 01 is not made too thick to meet the market demand for thinning, and the first buffer layer 50 having a concave curved shape surface cannot be prepared because it is too thin.
  • the material of the first buffer layer 50 may be polyimide (PI).
  • the OLED display 01 provided by the embodiment of the present invention is an active matrix OLED display, that is, as shown in FIG. 4, In each of the sub-pixel units of the OLED display 01, a thin film transistor 60 between the base substrate 10 and the first buffer layer 50 is also formed.
  • the thin film transistor 60 includes a gate 601, a gate insulating layer 602, a semiconductor active layer 603, a source 604, and a drain 605; and the thin film transistor 60 may be a top gate type or a bottom gate type.
  • the first electrode 20 is electrically connected to the drain 605 of the thin film transistor through at least a via formed on the first buffer layer 50.
  • the method further includes: forming a second buffer layer 70 between the base substrate 10 and the thin film transistor 60, the second buffer layer 70 and the base substrate 10 contact.
  • the second buffer layer 70 may be a single layer or a multilayer structure, and the material thereof may be, for example, SiN (silicon nitride), SiOx (silicon oxide), or the like.
  • the second buffer layer 70 helps to improve the surface flatness and adhesion of the base substrate 10, and also contributes to improvement of water vapor permeability resistance.

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Abstract

提供一种有机发光二极管（OLED）显示器（01）及其制备方法。该OLED显示器（01）包括多个子像素单元，每个所述子像素单元均包括依次设置在衬底基板（10）上的第一电极（20）、有机材料功能层（30）、第二电极（40）。所述子像素单元还包括：设置在所述衬底基板（10）和所述第一电极（20）之间的第一缓冲层（50）。所述第一缓冲层（50）与所述第一电极（20）对应部分且远离所述衬底基板（10）一侧的表面具有凹陷的弧形形状；所述第一电极（20）为透明电极，所述第二电极（40）为不透明金属电极。

Description

OLED显示器及其制备方法 技术领域
本发明的实施例涉及一种OLED显示器及其制备方法。
背景技术
有机发光二极管(Organic Light Emitting Diode，简称OLED)显示器是一种有机薄膜电致发光器件，其具有制备工艺简单、成本低、易形成柔性结构、视角宽等优点；因此，利用有机发光二极管的显示技术已成为一种重要的显示技术。
从结构上来划分，OLED可以被分为顶发射OLED显示器和底发射OLED显示器。对于底发射OLED显示器，如图1所示，包括依次设置在衬底基板10上的透明阳极11、有机材料功能层30、不透明金属阴极12。由于底发射OLED显示器的阳极是透明的，所以微腔效应在底发射OLED显示器中的表现并不明显，同顶发射相比底发射的视角要大一些。
然而，虽然底发射OLED显示器的视角相对顶发射OLED显示器来说要大一些，但是，在实际使用中，人们还是希望所使用的OLED显示器具有更大的视角以满足不同的角度观看的需求。
发明内容
根据本发明的一个实施例提供一种OLED显示器，包括多个子像素单元，每个所述子像素单元均包括依次设置在衬底基板上的第一电极、有机材料功能层、第二电极；其中，所述子像素单元还包括：设置在所述衬底基板和所述第一电极之间的第一缓冲层；
所述第一缓冲层与所述第一电极对应部分且远离所述衬底基板一侧的表面具有凹陷的形状；
所述第一电极为透明电极，所述第二电极为不透明金属电极。
在一个示例中，所述第一电极、所述有机材料功能层和所述第二电极共形地形成在所述第一缓冲层的所述凹陷处。
在一个示例中，所述第一缓冲层的所述凹陷处的表面为向所述衬底基板侧弯曲的曲面。
在一个示例中，所述曲面为弧面。
在一个示例中，所述第一缓冲层的厚度为2μm～5μm。
在一个示例中，所述第一缓冲层的材料包括聚酰亚胺。
在一个示例中，所述子像素单元还包括设置在所述衬底基板和所述第一缓冲层之间的薄膜晶体管。
在一个示例中，所述第一电极至少通过设置在所述第一缓冲层上的过孔与所述薄膜晶体管的漏极电连接。
在一个示例中，所述OLED显示器还包括设置在所述衬底基板和所述薄膜晶体管之间的第二缓冲层，所述第二缓冲层与所述衬底基板接触。
在一个示例中，所述第二缓冲层的材料包括氧化硅和氮化硅中的至少一种。
根据本发明的另一个实施例提供一种OLED显示器的制备方法，所述OLED显示器包括多个子像素单元；所述方法包括：
在衬底基板上形成第一缓冲层；其中，在每个所述子像素单元中对应第一电极的区域，所述第一缓冲层远离所述衬底基板一侧的表面具有凹陷的弧形形状；
在形成有所述第一缓冲层的基板上，在每个所述子像素单元的区域，依次形成所述第一电极、有机材料功能层、第二电极；
其中，所述第一电极为透明电极，所述第二电极为不透明金属电极。
在一个示例中，所述在衬底基板上形成第一缓冲层包括：
在所述衬底基板上形成第一缓冲层薄膜；
利用图形化的掩模的遮蔽作用，对与所述掩模的开口对应的所述第一缓冲层薄膜进行干法刻蚀，形成表面具有凹陷的形状的所述第一缓冲层；
其中，所述掩模板的开口与所述子像素单元的预定区域对应，且所述开口的靠近所述第一缓冲层薄膜一侧的面积大于远离所述第一缓冲层薄膜一侧的面积。
在一个示例中，该方法还包括，在每个所述子像素单元中，在所述衬底基板和所述第一缓冲层之间形成薄膜晶体管。
在一个示例中，对所述第一缓冲层薄膜进行的干法刻蚀包括等离子体蚀刻。
本发明的实施例通过将所述第一缓冲层与所述第一电极对应部分且远离所述衬底基板一侧的表面设置成具有凹陷的弧形形状，以使所述第二电极的表面形成具有凹陷的弧形形状，这样从有机材料功能层的发光层发出的光在到达不透明的第二电极表面时，会使反射光更加发散的从透明的第一电极一侧出射，从而使得不同角度的光的出射率增加，进而增大了所述OLED显示器的视角以及发光强度。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为现有技术提供的一种OLED显示器的结构示意图；
图2为本发明实施例提供的一种OLED显示器的结构示意图一；
图3为本发明实施例提供的一种OLED显示器实现出射光视角增大的示意图；
图4为本发明实施例提供的一种OLED显示器的结构示意图二；
图5为本发明实施例提供的一种OLED显示器的结构示意图三；
图6-图8为本发明实施例提供的一种形成表面具有凹陷的弧形形状的第一缓冲层的过程示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供了一种OLED显示器01，如图2和图3所示，该OLED显示器01包括多个子像素单元，每个所述子像素单元均包括依次设置在衬底 基板10上的第一电极20、有机材料功能层30、第二电极40；进一步所述子像素单元还包括：设置在所述衬底基板10和所述第一电极20之间的第一缓冲层50。所述第一缓冲层50与所述第一电极20对应部分且远离所述衬底基板10一侧的表面具有凹陷的弧形形状；所述第一电极20为透明电极，所述第二电极40为不透明金属电极。这里的凹陷具有弧形形状是指第一缓冲层50的在凹陷处的表面为向衬底基板侧弯曲的弧面。然而，根据本发明的实施例并不限制于严格的弧面，第一缓冲层50的在凹陷处的表面可以为任何合适的向衬底基板侧弯曲的曲面或其他合适的形状。
对于传统的底发射OLED显示器，有机材料功能层30和第二电极40之间的界面是一个平面，从有机材料功能层30的发光层发出的光以近似垂直于该界面的方向入射到所述第二电极40的表面，那么反射回来的光也以垂直于界面的方向从第一电极20出射，即，例如如图3中的出射光1。而对于本发明提供的底发射OLED显示器，由于有机材料功能层30和第二电极40之间的界面是向第一电极20方向凸出的弧形界面。也就是说，第一电极20、有机材料功能层30和第二电极40共形地形成在第一缓冲层的凹陷处，因此，自然具有了向衬底基板侧弯曲的形状。这时，从有机材料功能层30的发光层发出的光以同样方向(竖直方向)入射到所述第二电极40的表面时，该入射光线就会和法线方向之间形成一定的入射角，根据反射原理，反射回来的光也会以一定角度从第一电极20出射，即，例如图3中的出射光2。
由此可以看出，当不透明的第二电极40靠近有机材料功能层30一侧的表面的形状发生改变时，从第二电极40反射之后从透明的第一电极20出射的这部分光的出射角度会更加发散，从而也使不同角度的光的出射率增加，进而可以增大所述OLED显示器01的视角。
需要说明的是，不对所述第一缓冲层50的材料进行限定，只要能使其远离所述衬底基板10的一侧表面形成具有凹陷的弧形形状即可。
当所述第一缓冲层50的材料为导电材料时，需在该第一缓冲层50和第一电极20之间设置绝缘层，具体根据实际情况进行设定，在此不再赘述。
由于所述第一缓冲层50位于所述第一电极20的下方，即：位于下方的第一缓冲层50需先制备形成，位于上方的第一电极20后制备形成，因此，在第一缓冲层50与所述第一电极20对应部分的上表面具有凹陷的弧形形状 的情况下，在其上方形成第一电极20也具有凹陷的弧形形状，同理位于所述第一电极20上方的有机材料功能层30和第二电极40也具有凹陷的弧形形状。
第一电极20可以为阳极或阴极，第二电极40可以为阴极或阳极。即：若第一电极20为阳极，则第二电极40阴极；若第一电极20为阴极，则第二电极40为阳极。
对于所述有机材料功能层30，其可以至少包括发光层，进一步还可以包括电子传输层和空穴传输层，在此基础上为了能够提高电子和空穴注入发光层的效率，所述有机材料功能层30还可以包括设置在阴极与所述电子传输层之间的电子注入层，以及设置在所述空穴传输层与阳极之间的空穴注入层。
基于此，当向阳极和阴极施加工作电压时，阳极中的空穴和阴极中的电子均注入到所述发光层中；空穴和电子在所述发光层中发生复合并释放出能量；该能量以光的形式发出，经过所述发光层中的不同发光材料而显示为不同颜色的光，并从所述有机材料功能层30的两侧均匀的射出。
一个像素单元中的三个子像素单元的所述发光层可以分别包括红光、绿光、蓝光的发光材料；当然，上述发光层也可以仅包括白光的发光材料，在此不做限定。
所述OLED显示器01可以是无源矩阵型显示器，也可以是有源矩阵型显示器，在此不做限定。
本发明实施例中，相邻的第一电极20之间可以通过像素隔离层进行隔离，在此不再赘述。
本发明所有实施例的附图均示意性的绘示出与发明点有关的图案层，对于与发明点无关的图案层不进行绘示或仅绘示出部分。
本发明实施例提供了一种OLED显示器01，包括多个子像素单元，每个所述子像素单元均包括依次设置在衬底基板10上的第一电极20、有机材料功能层30、第二电极40；进一步所述子像素单元还包括：设置在所述衬底基板10和所述第一电极20之间的第一缓冲层50。所述第一缓冲层50与所述第一电极20对应部分且远离所述衬底基板10一侧的表面具有凹陷的弧形形状；所述第一电极20为透明电极，所述第二电极40为不透明金属电极。
本发明实施例通过将所述第一缓冲层50与所述第一电极20对应部分且 远离所述衬底基板10一侧的表面设置成具有凹陷的弧形形状，以使所述第二电极40的表面形成具有凹陷的弧形形状，这样从有机材料功能层30的发光层发出的光在到达不透明的第二电极40表面时，会使反射光更加发散的从透明的第一电极20一侧出射，从而使得不同角度的光的出射率增加，进而增大了所述OLED显示器01的视角以及发光强度。
例如，所述第一缓冲层50的厚度可以为2μm～5μm。
这样，即不会使所述OLED显示器01太厚而无法满足薄型化的市场需求，又不会由于太薄而无法制备形成具有凹陷的弧形形状表面的所述第一缓冲层50。
例如，所述第一缓冲层50的材料可以为聚酰亚胺(PI)。
这是由于PI的结构并不致密，当通过例如干法刻蚀制备形成具有凹陷的弧形形状表面的所述第一缓冲层50时，可以很容易的将需要凹陷的那部分PI材料刻蚀掉，并且刻蚀出预期的效果。
在上述基础上，考虑到无源矩阵应用于大尺寸显示器时有其不足的一面，例如，本发明实施例提供的OLED显示器01为有源矩阵型OLED显示器，即，如图4所示，所述OLED显示器01的每个子像素单元还可以包括设置在所述衬底基板10和所述第一缓冲层50之间的薄膜晶体管60。
所述薄膜晶体管60包括栅极601、栅绝缘层602、半导体有源层603、源极604和漏极605；且所述薄膜晶体管60可以是顶栅型，也可以是底栅型。
当然，所述OLED显示器01还包括与所述栅极601电连接的栅线、栅线引线(图中未标识出)等，与所述源极604电连接的数据线、数据线引线(图中未标识出)等。
进一步的，考虑到若使漏极605与所述第二电极40电连接，势必需要所述第二电极40穿过有机材料功能层30和第一电极20，来与漏极605电连接，这样一方面可能导致第二电极40与第一电极20发生短路，另一方面由于有机材料功能层30材料的特殊性，制备工艺相对也复杂。基于此，本发明实施例例如为，将所述漏极605与所述第一电极20电连接，且所述第一电极20通过设置在所述第一缓冲层50上的过孔与所述薄膜晶体管的漏极605电连接。
例如，如图5所示，所述OLED显示器01还包括设置在所述衬底基板 10和所述薄膜晶体管60之间的第二缓冲层70，所述第二缓冲层70与所述衬底基板10接触。
所述第二缓冲层70可以是单层或多层结构，其材料例如可以是SiN(氮化硅)、SiOx(氧化硅)等。
通过所述第二缓冲层70有助于改善所述衬底基板10的表面平整度和附着力，而且还有助于改善抗水氧渗透性。
需要说明的是，由于有机材料功能层30材料的特殊性，本发明实施例中，OLED显示器01还应包括用于封装有机材料的封装层；其中，所述封装层可以是薄膜封装也可以是基板封装，在此不做限定。
本发明实施例还提供了一种OLED显示器的制备方法，所述OLED显示器01包括多个子像素单元。所述方法包括如下步骤：
S10、参考图2所示，在衬底基板10上形成第一缓冲层50；其中，在每个所述子像素单元中对应第一电极20的区域，所述第一缓冲层50远离所述衬底基板10一侧的表面具有凹陷的弧形形状。
S11、参考图2所示，在形成有所述第一缓冲层50的基板上，在每个所述子像素单元的区域，依次形成所述第一电极20、有机材料功能层30、第二电极40。
所述第一电极20为透明电极，所述第二电极40为不透明金属电极。
需要说明的是，此处不对表面具有凹陷的弧形形状的第一缓冲层50的形成方法进行限定。
由于先制备形成第一缓冲层50，然后在所述第一缓冲层50的上方制备形成第一电极20，因此，在第一缓冲层50与所述第一电极20对应部分的上表面具有凹陷的弧形形状的情况下，在其上方形成第一电极20也具有凹陷的弧形形状，同理位于所述第一电极20上方的有机材料功能层30和第二电极40也具有凹陷的弧形形状。
本发明实施例提供了一种包括多个子像素单元的OLED显示器的制备方法，包括：在衬底基板10上形成第一缓冲层50；其中，在每个所述子像素单元中对应第一电极20的区域，所述第一缓冲层50远离所述衬底基板10一侧的表面具有凹陷的弧形形状；在形成有所述第一缓冲层50的基板上，在每个所述子像素单元的区域，依次形成第一电极20、有机材料功能层30、第 二电极40；其中，所述第一电极20为透明电极，所述第二电极40为不透明金属电极。
本发明实施例通过在所述第一缓冲层50与所述第一电极20对应部分且远离所述衬底基板10一侧的表面形成具有凹陷的弧形形状，以使所述第二电极40的表面形成具有凹陷的弧形形状，这样从有机材料功能层30的发光层发出的光在到达不透明的第二电极40表面时，会使反射光更加发散的从透明的第一电极20一侧出射，从而使得不同角度的光的出射率增加，进而增大了所述OLED显示器01的视角以及发光强度。
例如，上述步骤S10，具体可以包括如下过程：
S101、如图6所示，在衬底基板10上形成第一缓冲层薄膜50a。
由于PI的结构并不致密，当下述通过干法刻蚀制备形成具有凹陷的弧形形状表面的所述第一缓冲层50时，可以很容易的将需要凹陷的那部分PI材料刻蚀掉，并且刻蚀出预期的效果，第一缓冲层薄膜50a的材料采用PI材料。
S102、如图7所示，利用图形化的掩模80的遮蔽作用，对与所述掩模的开口801对应的所述第一缓冲层薄膜50a进行干法刻蚀，形成如图8所示的表面具有凹陷的弧形形状的所述第一缓冲层50。
所述掩模的开口801与所述子像素单元的预定区域对应，且所述开口801的靠近所述第一缓冲层薄膜50a一侧的面积大于远离所述第一缓冲层薄膜50a一侧的面积。
需要说明的是，干法刻蚀是用等离子体进行薄膜刻蚀的技术，基于此，本发明实施例中采用如图7所示形状的掩模80作为屏蔽，即利用所述掩模板80的影子效应，被所述掩模板80竖直阻挡住的区域(该区域中掩模板80与所述第一缓冲层薄膜50a具有间隙)等离子体的浓度小，所以越靠近所述掩模板80的边缘，刻蚀的效果也就越不明显，刻蚀出来的弧形结构较浅；而正对所述掩模板的开口801的区域，由于等离子体可以直接进入，因而其等离子体浓度较大，刻蚀的效果也越明显，刻蚀的深度会更深。
预定区域为每个所述子像素单元的对应第一电极20的区域中，大于一定凹陷深度的区域。
对与所述掩模的开口801对应的所述第一缓冲层薄膜50a进行干法刻蚀是指，对从所述开口801处进入的等离子体，只要掩模80和第一缓冲层薄膜 50a之间具有间隙，该等离子体可以到达，便可以对所述第一缓冲层薄膜50a进行刻蚀。
例如，所述第一缓冲层50的厚度可以为2μm～5μm。
这样，即不会使所述OLED显示器01太厚而无法满足薄型化的市场需求，又不会由于太薄而无法制备形成具有凹陷的弧形形状表面的所述第一缓冲层50。
例如，所述第一缓冲层50的材料可以为聚酰亚胺(PI)。
在上述基础上，考虑到无源矩阵应用于大尺寸显示器时有其不足的一面，例如，本发明实施例提供的OLED显示器01为有源矩阵型OLED显示器，即，参考图4所示，在所述OLED显示器01的每个子像素单元中，还形成位于所述衬底基板10和所述第一缓冲层50之间的薄膜晶体管60。
所述薄膜晶体管60包括栅极601、栅绝缘层602、半导体有源层603、源极604和漏极605；且所述薄膜晶体管60可以是顶栅型，也可以是底栅型。
进一步的，所述第一电极20至少通过形成在所述第一缓冲层50上的过孔与所述薄膜晶体管的漏极605电连接。
例如，参考图5所示，所述方法还包括：在所述衬底基板10和所述薄膜晶体管60之间形成第二缓冲层70，所述第二缓冲层70与所述衬底基板10接触。所述第二缓冲层70可以是单层或多层结构，其材料例如可以是SiN(氮化硅)、SiOx(氧化硅)等。
通过所述第二缓冲层70有助于改善所述衬底基板10的表面平整度和附着力，而且还有助于改善抗水氧渗透性。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年7月9日递交的中国专利申请第201410325827.X号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (14)

  1. 一种OLED显示器，包括多个子像素单元，每个所述子像素单元均包括依次设置在衬底基板上的第一电极、有机材料功能层、第二电极；其中，所述子像素单元还包括：设置在所述衬底基板和所述第一电极之间的第一缓冲层；
    所述第一缓冲层与所述第一电极对应部分且远离所述衬底基板一侧的表面具有凹陷的形状；
    所述第一电极为透明电极，所述第二电极为不透明金属电极。
  2. 根据权利要求1所述的OLED显示器，其中，所述第一电极、所述有机材料功能层和所述第二电极共形地形成在所述第一缓冲层的所述凹陷处。
  3. 根据权利要求1或2所述的OLED显示器，其中，所述第一缓冲层的所述凹陷处的表面为向所述衬底基板侧弯曲的曲面。
  4. 根据权利要求3所述的OLED显示器，其中，所述曲面为弧面。
  5. 根据权利要求1至4任一项所述的OLED显示器，其中，所述第一缓冲层的厚度为2μm～5μm。
  6. 根据权利要求1至5任一项所述的OLED显示器，其中，所述第一缓冲层的材料包括聚酰亚胺。
  7. 根据权利要求1至6任一项所述的OLED显示器，其中，所述子像素单元还包括设置在所述衬底基板和所述第一缓冲层之间的薄膜晶体管。
  8. 根据权利要求7所述的OLED显示器，其中，所述第一电极至少通过设置在所述第一缓冲层上的过孔与所述薄膜晶体管的漏极电连接。
  9. 根据权利要求7所述的OLED显示器，其中，所述OLED显示器还包括设置在所述衬底基板和所述薄膜晶体管之间的第二缓冲层，所述第二缓冲层与所述衬底基板接触。
  10. 根据权利要求9所述的OLED显示器，其中，所述第二缓冲层的材料包括氧化硅和氮化硅中的至少一种。
  11. 一种OLED显示器的制备方法，所述OLED显示器包括多个子像素单元；所述方法包括：
    在衬底基板上形成第一缓冲层；其中，在每个所述子像素单元中对应第一电极的区域，所述第一缓冲层远离所述衬底基板一侧的表面具有凹陷的弧形形状；
    在形成有所述第一缓冲层的基板上，在每个所述子像素单元的区域，依次形成所述第一电极、有机材料功能层、第二电极；
    其中，所述第一电极为透明电极，所述第二电极为不透明金属电极。
  12. 根据权利要求11所述的方法，其中，所述在衬底基板上形成第一缓冲层包括：
    在所述衬底基板上形成第一缓冲层薄膜；
    利用图形化的掩模的遮蔽作用，对与所述掩模的开口对应的所述第一缓冲层薄膜进行干法刻蚀，形成表面具有凹陷的形状的所述第一缓冲层；
    其中，所述掩模板的开口与所述子像素单元的预定区域对应，且所述开口的靠近所述第一缓冲层薄膜一侧的面积大于远离所述第一缓冲层薄膜一侧的面积。
  13. 根据权利要求11或12所述的方法，还包括，在每个所述子像素单元中，在所述衬底基板和所述第一缓冲层之间形成薄膜晶体管。
  14. 根据权利要求11所述的方法，其中，对所述第一缓冲层薄膜进行的干法刻蚀包括等离子体蚀刻。
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