WO2016000374A1 - 发光二极管显示面板及其制作方法、显示装置 - Google Patents

发光二极管显示面板及其制作方法、显示装置 Download PDF

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Publication number
WO2016000374A1
WO2016000374A1 PCT/CN2014/090390 CN2014090390W WO2016000374A1 WO 2016000374 A1 WO2016000374 A1 WO 2016000374A1 CN 2014090390 W CN2014090390 W CN 2014090390W WO 2016000374 A1 WO2016000374 A1 WO 2016000374A1
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Prior art keywords
light emitting
display panel
protective film
emitting diode
light
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PCT/CN2014/090390
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English (en)
French (fr)
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李永谦
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京东方科技集团股份有限公司
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Priority to US14/762,032 priority Critical patent/US9640560B2/en
Priority to EP14882776.9A priority patent/EP3166148B1/en
Publication of WO2016000374A1 publication Critical patent/WO2016000374A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes

Definitions

  • At least one embodiment of the present invention is directed to an LED display panel and a method of fabricating the same, and a display device including the LED display panel.
  • the LED display Compared with the current market-leading liquid crystal display, the LED display has the advantages of simple process, wide viewing angle, fast response, high brightness, high contrast, bright color, wide working range, light weight, thin thickness and low power consumption. Series advantages.
  • At least one embodiment of the present invention provides a light emitting diode display panel, a method for fabricating the same, and a display device for solving the problem that the vapor deposition mask of the LED display panel is easy to scratch the thin film transistor back plate and cause static electricity when the light emitting structure is fabricated.
  • At least one embodiment of the present invention provides a light emitting diode display panel including a thin film transistor back plate, a light emitting structure, and a protective film, the protective film being located between the thin film transistor back plate and the light emitting structure, the protection A film covers the gate lines and the data lines in the display area of the LED display panel.
  • At least one embodiment of the present invention also provides a display device including the above-described light emitting diode display panel.
  • At least one embodiment of the present invention further provides a method of fabricating a light emitting diode display panel including a thin film transistor back plate and a light emitting structure, the manufacturing method comprising: manufacturing a thin film transistor back plate; and manufacturing a protective film, The protective film covers gate lines and data lines in a display area of the light emitting diode display panel; and one of the light emitting structures is fabricated over the protective film.
  • FIG. 1 is a schematic cross-sectional view of a light emitting diode display panel according to an embodiment of the present invention
  • FIG. 2 is a schematic plan view of a light emitting diode display panel according to an embodiment of the present invention.
  • FIG. 3 is a flow chart of a method for fabricating a light emitting diode display panel provided by the present invention.
  • 1 base substrate; 2: grid; 3: drain; 4: source; 5: passivation layer; 6: color filter film; 7: resin layer; 8: anode; Light-emitting region defining layer; 10: protective film; 11: light-emitting layer; 12: cathode; 13: circuit outside the display area; 21: gate line; 22: data line.
  • the inventor of the present application has noticed that in the process of fabricating a light-emitting diode display panel, when the light-emitting layer is evaporated by a mask evaporation method, the mask is closely attached to the thin film transistor back plate, if the mask is If the edge is defective, the thin film transistor back plate will be scratched when it is aligned, resulting in short circuit, static electricity and other undesirable phenomena. Moreover, the process of the luminescent layer is very complicated, and multiple processes such as vapor deposition and chemical vapor deposition are required, which is likely to generate strong static electricity and cause damage to the circuit.
  • At least one embodiment of the present invention first provides an LED display panel, which may be an organic light emitting diode (OLED) display panel.
  • OLED organic light emitting diode
  • the light emitting diode display panel includes a thin film transistor back plate, a light emitting structure, and a protective film 10, and the protective film 10 is located between the thin film transistor back plate and the light emitting structure.
  • the protective film 10 covers the gate lines and the data lines in the display area (AA area) of the light emitting diode display panel.
  • the protective film 10 forms a mesh structure covering the gate lines 21 and the data lines 22 in the display area.
  • “Overlay” herein refers to occlusion in the vertical direction.
  • the thin film transistor backplane may include a base substrate 1, a gate 2, a drain 3, a source 4, a passivation layer 5, and the like, and the light emitting structure includes an anode 8, a light emitting layer 11, and a cathode 12.
  • the step of protecting the film 10 may be performed before the mask vapor-deposits the light-emitting layer 11, so that at least a portion of the protective film 10 is in contact with the light-emitting layer 11 in the light-emitting structure, for example, at least a portion of the protective film 10 and the light-emitting structure
  • the one side of the layer 11 facing the thin film transistor back plate is in contact with each other, so that the protective film 10 can effectively prevent the mask from being scratched on the line region in the display region of the thin film transistor back plate when the mask is vapor-deposited and the resulting Circuit short circuit, static electricity and other issues.
  • the protective film 10 also covers the position of the circuit 13 on the periphery of the display area of the LED display panel.
  • the protective film 10 forms a rectangular frame structure covering the peripheral circuit at the periphery of the display area.
  • the circuit 13 on the periphery of the display area includes a drive circuit and the like.
  • the protective film 10 can effectively prevent the mask from being scratched on the peripheral circuit of the display region of the thin film transistor back plate and the short circuit, static electricity, and the like caused by the mask when the light-emitting layer 11 is evaporated.
  • the material of the protective film is not limited, and as long as it has good hardness, it is possible to prevent the mask from scratching the material of the thin film transistor back sheet.
  • a method of mask evaporation may also be employed in the fabrication of the cathode 12, and the step of fabricating the protective film 10 may also be performed before the mask vapor deposition of the cathode 12, and then at least a portion of the protective film 10 may be combined with the light emitting structure.
  • the one surface of the intermediate light-emitting layer 11 facing the cathode 12 is in contact with each other, so that the protective film 10 can effectively prevent the mask from scratching the light-emitting layer 11 when the cathode 12 is vapor-deposited.
  • the protective film 10 may be made of a conductive material and electrically connected to the cathode 12.
  • the material of the protective film 10 may be a transparent conductive material such as indium tin oxide (ITO) or a metal, and the ITO is annealed and crystallized. It has good hardness and is suitable as a protective film like metal.
  • the protective film 10 is connected in parallel with the cathode 12, and the protective film 10 not only functions as an electrostatic shield but also reduces the internal resistance (IR) pressure drop of the cathode 12. The better the conductivity of the protective film 10, the smaller the IR drop of the cathode 12 can be, and the light-emitting area can be appropriately increased.
  • the LED display panel shown in FIG. 1 is in a bottom illumination mode. Since the illumination region defining layer 9 has defined the range of the illumination region, and the light passes through the thin film transistor backplane, the structure itself is not required in the bottom illumination mode. Black matrix.
  • the cathode 12 is made of a transparent material. If the protective film 10 is also made of a transparent conductive material, such as ITO, then a black matrix is required to block the thin film transistor.
  • the LED display panel further includes a black matrix covering the gate lines and the data lines in the display area of the LED display panel.
  • the protective film 10 is made of a metal material, since the metal is opaque, the protective film 10 can simultaneously The light-shielding effect of the thin film transistor is realized, and the thin film transistor is not affected by the light. In this case, the subsequent black matrix process can be omitted, and the cost can be reduced.
  • the LED display panel provided by at least one embodiment of the present invention may include: a substrate 1; a gate 2, a drain 3, and a source formed on the substrate 1 a thin film transistor array of the pole 4; a passivation layer 5, a color filter film 6, and a resin layer 7 sequentially formed on the thin film transistor array, the resin layer 7 being a transparent resin layer; the above-described resin layer 7 being sequentially formed
  • the embodiment of the present invention is also applicable to the LED display panel of the top emission mode, and details are not described herein again.
  • a protective film process is added in the process of the LED display panel, which can effectively prevent the scratch of the thin film transistor back plate and the electrostatic discharge caused by the evaporation mask plate when the light emitting structure is fabricated.
  • the protective film is electrically conductive, it is connected to the cathode of the light emitting structure of the display panel, and the IR drop of the cathode can also be reduced.
  • the use of an opaque material such as metal to form the above protective film can protect the thin film transistor from light, thereby eliminating the latter black matrix process and reducing the cost.
  • At least one embodiment of the present invention further provides a display device including the above-described LED display panel provided by the embodiment of the present invention.
  • the display device can be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • At least one embodiment of the present invention also provides a method of fabricating a light emitting diode display panel (eg, an organic light emitting diode display panel), the light emitting diode display panel including a thin film transistor backplate and a light emitting structure, and the manufacturing method includes: manufacturing a thin film transistor back sheet; a protective film is formed to cover the gate lines and the data lines in the display area of the LED display panel; and above the protective film (ie, a protective film away from the thin film transistor back sheet) Side, as shown in Figure 1), fabricates one of the light-emitting structures.
  • a light emitting diode display panel eg, an organic light emitting diode display panel
  • the manufacturing method includes: manufacturing a thin film transistor back sheet; a protective film is formed to cover the gate lines and the data lines in the display area of the LED display panel; and above the protective film (ie, a protective film away from the thin film transistor back sheet) Side, as shown in Figure 1), fabricates one of the light-
  • the protective film may also cover circuitry on the periphery of the display area of the LED display panel.
  • the “layer” may be a light-emitting layer or a cathode in the light-emitting structure, and the layer usually needs to be deposited by mask evaporation, and the operation of mask evaporation is relatively simple compared with a photolithography process. However, the mask needs to be in close contact with the substrate.
  • the protective film serves to prevent the thin film transistor back plate or the light emitting layer from being scratched by the mask during the mask evaporation process, and avoids problems such as short circuit and static discharge caused by scratches.
  • the fabrication method further includes annealing the protective film between the step of fabricating a protective film and the step of fabricating one of the light-emitting structures over the protective film A step of.
  • fabricating one of the light-emitting structures over the protective film 10 includes: using a mask evaporation method on the protective film 10.
  • the light emitting layer 11 of the light emitting structure is formed.
  • the manufacturing method before the luminescent layer 11 of the light emitting structure is formed by a method of mask evaporation, the manufacturing method further includes: above the thin film transistor back plate (ie, the lining of the thin film transistor back plate) One side of the base substrate 1 is formed with an anode 8 of the light-emitting structure; a light-emitting region defining layer 9 is formed such that a portion of the light-emitting region defining layer 9 is formed on the anode 8, and a part of the protective film 10 is formed at The illuminating zone is defined on layer 9.
  • the manufacturing method further includes: forming a cathode 12 of the light-emitting structure, and at this time, the protective film 10 is A conductive material is made and electrically connected to the cathode 12.
  • the electrical connection of the protective film 10 to the cathode 12 not only functions as an electrostatic shield but also reduces the IR drop of the cathode 12. The better the conductivity of the protective film 10, the smaller the IR drop of the cathode 12, so that the light-emitting area can be appropriately increased.
  • the method of fabricating the LED display panel further includes the step of forming a black matrix.
  • FIG. 3 is a flow chart of a method for fabricating an LED display panel according to an embodiment of the present invention.
  • the method may include the following steps S1-S6, which are described one by one below.
  • a passivation layer a color filter film, and a resin layer are sequentially formed on the thin film transistor array, and the resin layer may be a transparent resin layer.
  • the protective film may also cover circuitry on the periphery of the display area of the LED display panel.
  • the protective film is made of a conductive material and is electrically connected to the cathode.
  • the light emitting layer of the light emitting structure may be an organic light emitting layer.
  • a protective film process is added in the process of the OLED display panel, which can effectively prevent the scratch of the thin film transistor back plate and the electrostatic discharge caused by the evaporation mask plate when the light emitting structure is fabricated.
  • the protective film is electrically conductive, it is connected to the cathode of the light emitting structure of the display panel, and the IR drop of the cathode can also be reduced.
  • the cathode is a transparent material, and if the protective film is also made of a transparent conductive material, such as indium tin oxide (ITO), then a black matrix must be fabricated to block the thin film transistor.
  • the LED display panel further includes a black matrix covering the gate lines and the data lines in the display area of the LED display panel.
  • the protective film is made of a metal material, since the metal is opaque, the protective film can simultaneously achieve a light-shielding effect on the thin film transistor, so that the thin film transistor is not affected by the light, and the subsequent black matrix process can be omitted at this time, cut costs.

Abstract

一种发光二极管显示面板及其制作方法、显示装置，所述发光二极管显示面板包括薄膜晶体管背板、发光结构以及保护膜（10），所述保护膜（10）位于所述薄膜晶体管背板和所述发光结构之间，所述保护膜（10）覆盖所述发光二极管显示面板显示区域中的栅线（21）和数据线（22）。该发光二极管显示面板的制程中增加了保护膜（10）工艺，可以有效防止制作发光结构时蒸镀掩膜板对薄膜晶体管背板的刮伤和由此引起的静电问题。

Description

发光二极管显示面板及其制作方法、显示装置 技术领域
本发明的至少一个实施例涉及一种发光二极管显示面板及其制作方法、以及包括所述发光二极管显示面板的显示装置。
背景技术
与目前占市场主导地位的液晶显示器相比，发光二极管显示器具有工艺简单、视角宽、响应速度快、亮度高、对比度高、色彩鲜艳、工作范围广、重量轻、厚度薄、功耗低等一系列优点。
发明内容
本发明的至少一个实施例提供一种发光二极管显示面板及其制作方法、显示装置，以解决发光二极管显示面板在制作发光结构时蒸镀掩膜板容易对薄膜晶体管背板造成刮伤以及引起静电的技术问题。
本发明的至少一个实施例提供一种发光二极管显示面板，其包括薄膜晶体管背板、发光结构以及保护膜，所述保护膜位于所述薄膜晶体管背板和所述发光结构之间，所述保护膜覆盖所述发光二极管显示面板显示区域中的栅线和数据线。
本发明的至少一个实施例还提供一种显示装置，其包括上述发光二极管显示面板。
本发明的至少一个实施例还提供一种发光二极管显示面板的制作方法，所述发光二极管显示面板包括薄膜晶体管背板和发光结构，所述制作方法包括：制造薄膜晶体管背板；制造保护膜，所述保护膜覆盖所述发光二极管显示面板显示区域中的栅线和数据线；以及在所述保护膜上方制造所述发光结构中的一层。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1是本发明实施例提供的发光二极管显示面板的截面示意图；
图2是本发明实施例提供的发光二极管显示面板的平面示意图；
图3是本发明提供的发光二极管显示面板的制作方法流程图。
在附图中，1：衬底基板；2：栅极；3：漏极；4：源极；5：钝化层；6：彩色滤光膜；7：树脂层；8：阳极；9：发光区界定层；10：保护膜；11：发光层；12：阴极；13：显示区域外围的电路；21：栅线；22：数据线。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本申请的发明人注意到，在发光二极管显示面板的制作过程中，利用掩膜蒸镀的方法蒸镀发光层的时候需要将掩膜板与薄膜晶体管背板紧密贴合，如果掩膜板的边缘有缺陷，就会在对位的时候对薄膜晶体管背板造成刮伤，形成短路、静电等不良现象。并且发光层的制程非常复杂，需要多次蒸镀、化学气相沉积等工艺，这容易产生很强的静电而对电路造成伤害。
本发明的至少一个实施例首先提供一种发光二极管显示面板，所述发光二极管显示面板可以是有机发光二极管(OLED)显示面板。所述显示面板的截面示意图如图1所示，所述显示面板的平面示意图如图2所示。
所述发光二极管显示面板包括薄膜晶体管背板、发光结构以及保护膜10，保护膜10位于所述薄膜晶体管背板和所述发光结构之间。保护膜10覆盖所述发光二极管显示面板的显示区域(AA区)中的栅线和数据线，例如在图2中，保护膜10在显示区域形成覆盖栅线21和数据线22的网状结构。这里的“覆盖”指垂直方向上的遮挡。
本发明实施例中，薄膜晶体管背板可以包括衬底基板1、栅极2、漏极3、源极4和钝化层5等，所述发光结构包括阳极8、发光层11和阴极12，制作 保护膜10的步骤可以在掩膜蒸镀发光层11之前进行，因此保护膜10的至少一部分与所述发光结构中的发光层11相接触，例如，保护膜10的至少一部分与发光结构中发光层11的面向薄膜晶体管背板的一面相接触，这样，保护膜10可以有效防止掩膜蒸镀发光层11时掩膜板对薄膜晶体管背板显示区域中线路区的刮伤和由此引起的电路短路、静电等问题。
在一个实施例中，保护膜10还覆盖所述发光二极管显示面板显示区域外围的电路13的位置，例如在图2中，保护膜10在显示区域外围形成覆盖外围电路的矩形框状结构，所述显示区域外围的电路13包括驱动电路等。这样，保护膜10可以有效防止掩膜蒸镀发光层11时掩膜板对薄膜晶体管背板显示区域外围电路的刮伤和由此引起的电路短路、静电等问题。这里对保护膜的材料不做限定，只要是具有较好的硬度，能够防止掩膜板刮伤薄膜晶体管背板的材料即可。
除此之外，制作阴极12时也可能采用掩膜蒸镀的方法，所述制作保护膜10的步骤也可以在掩膜蒸镀阴极12之前进行，那么保护膜10的至少一部分可以与发光结构中发光层11的面向阴极12的一面相接触，这样，保护膜10可以有效防止掩膜蒸镀阴极12时掩膜板对发光层11的刮伤。
在至少一个实施例中，所述保护膜10可以由导电材料制成且与阴极12电连接，例如保护膜10的材料可以是氧化铟锡(ITO)等透明导电材料或者金属，ITO退火结晶后具有很好的硬度，与金属一样很适合作为保护膜。在这种情况中，保护膜10与阴极12并联，保护膜10不但起到静电屏蔽的作用，还能减少阴极12的内阻(IR)压降。保护膜10的导电性能越好，可以使阴极12的IR压降越小，从而能够适当增大发光面积。
图1中所示的发光二极管显示面板为底发光模式，由于发光区界定层9已经界定了发光区域的范围，而且光线会经过薄膜晶体管背板，其结构本身的特点使得底发光模式中不需要黑矩阵。
如果采用顶发光模式，所述阴极12采用透明材料，若所述保护膜10也由透明导电材料制成，例如由ITO制成，那么后续需要制作黑矩阵对薄膜晶体管挡光，此时所述发光二极管显示面板还包括黑矩阵，所述黑矩阵覆盖所述发光二极管显示面板显示区域中的栅线和数据线。
如果保护膜10由金属材料制成，由于金属不透光，保护膜10能够同时 实现对薄膜晶体管的遮光效果，使薄膜晶体管不受光照影响，此时可省略后续的黑矩阵制程，可以降低成本。
以图1中的底发光模式为例，本发明的至少一个实施例提供的发光二极管显示面板可以包括：衬底基板1；形成在衬底基板1上的包括栅极2、漏极3、源极4的薄膜晶体管阵列；依次形成在所述薄膜晶体管阵列上的钝化层5、彩色滤光膜6和树脂层7，树脂层7为透明树脂层；依次形成在树脂层7上的所述发光结构的阳极8、发光区界定层9、保护膜10、所述发光结构的发光层11和所述发光结构的阴极12。
如上所述，本发明实施例同样也适用于顶发光模式的发光二极管显示面板，在此不再赘述。
本发明实施例在发光二极管显示面板的制程中增加了保护膜工艺，可以有效防止制作发光结构时蒸镀掩膜板对薄膜晶体管背板的刮伤和由此引起的静电释放。当所述保护膜可导电时，使其与显示面板发光结构的阴极连接，还能减少阴极的IR压降。此外，当采用顶发光模式的时候，使用金属等不透明材料制作上述保护膜能够保护薄膜晶体管不受光照影响，从而省去后段黑矩阵制程，起到降低成本的作用。
本发明的至少一个实施例还提供了一种显示装置，该显示装置包括本发明实施例所提供的上述发光二极管显示面板。该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明的至少一个实施例还提供了一种发光二极管显示面板(例如有机发光二极管显示面板)的制作方法，所述发光二极管显示面板包括薄膜晶体管背板和发光结构，所述制作方法包括：制造薄膜晶体管背板；制造保护膜，使所述保护膜覆盖所述发光二极管显示面板显示区域中的栅线和数据线；以及在所述保护膜上方(即保护膜的远离薄膜晶体管背板的一侧，如图1所示)制造所述发光结构中的一层。
在一个实施例中，所述保护膜还可以覆盖所述发光二极管显示面板显示区域外围的电路。
所述“一层”可以是所述发光结构中的发光层或者阴极，该层通常需要掩膜蒸镀来制作完成的，与光刻等工艺相比，掩模蒸镀的操作工程相对简单， 但是掩膜板需要紧贴基板。所述保护膜起到防止掩膜蒸镀过程中薄膜晶体管背板或者发光层被掩膜板刮伤的作用，并避免因刮伤引起的电路短路、静电释放等问题。
在至少一个实施例中，所述制作方法还包括在所述制造保护膜的步骤和在所述保护膜上方制造所述发光结构中的一层的步骤之间进行的对所述保护膜进行退火的步骤。
以图1中所示的结构为例，在至少一个实施例中，在所述保护膜10上方制造所述发光结构中的一层包括：利用掩膜蒸镀的方法在所述保护膜10上形成所述发光结构的发光层11。
在一个实施例中，在利用掩膜蒸镀的方法形成所述发光结构的发光层11之前，所述制作方法还包括：在所述薄膜晶体管背板的上方(即薄膜晶体管背板的远离衬底基板1的一侧)形成所述发光结构的阳极8；形成发光区界定层9，使所述发光区界定层9的一部分形成在所述阳极8上，所述保护膜10的一部分形成在所述发光区界定层9上。
在一个实施例中，在利用掩膜蒸镀的方法形成所述发光结构的发光层11之后，所述制作方法还包括：形成所述发光结构的阴极12，此时，所述保护膜10由导电材料制成且与所述阴极12电连接。保护膜10与阴极12电连接不但可以起到静电屏蔽的作用，还能减少阴极12的IR压降。保护膜10的导电性能越好，阴极12的IR压降越小，从而能够适当增大发光面积。
如上所述，在顶发光模式下，如果所述保护膜由透明导电材料制成，那么所述发光二极管显示面板的制作方法还包括形成黑矩阵的步骤。
以在保护膜上制造发光结构中的发光层为例，图3是本发明实施例提供的发光二极管显示面板的制作方法流程图，该方法可以包括以下步骤S1-S6，下面逐一介绍这些步骤。
S1、提供衬底基板。
S2、在所述衬底基板上形成包括栅极、漏极、源极的薄膜晶体管阵列。
S3、在所述薄膜晶体管阵列上依次形成钝化层、彩色滤光膜和树脂层，所述树脂层可以是透明树脂层。
S4、在所述树脂层上形成发光结构的阳极和发光区界定层。
S5、在所述发光区界定层上形成保护膜，所述保护膜覆盖所述发光二极 管显示面板显示区域中的栅线和数据线。在一个示例中，所述保护膜还可以覆盖所述发光二极管显示面板显示区域外围的电路。
S6、在所述保护膜上形成所述发光结构的发光层和所述发光结构的阴极。例如，所述保护膜由导电材料制成且与所述阴极电连接。例如，发光结构的发光层可以为有机发光层。
本发明实施例在有机发光二极管显示面板的制程中增加了保护膜工艺，可以有效防止制作发光结构时蒸镀掩膜板对薄膜晶体管背板的刮伤和由此引起的静电释放。当所述保护膜可导电时，使其与显示面板发光结构的阴极连接，还能减少阴极的IR压降。
在顶发光模式中，所述阴极为透明材料，如果所述保护膜也由透明导电材料制成，例如由氧化铟锡(ITO)制成，那么后续必须制作黑矩阵对薄膜晶体管挡光，此时所述发光二极管显示面板还包括黑矩阵，所述黑矩阵覆盖所述发光二极管显示面板显示区域中的栅线和数据线。
如果所述保护膜由金属材料制成，由于金属不透光，所述保护膜能够同时实现对薄膜晶体管的遮光效果，使薄膜晶体管不受光照影响，此时可省略后续的黑矩阵制程，可以降低成本。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年7月1日递交的中国专利申请第201410309285.7号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (16)

  1. 一种发光二极管显示面板，包括薄膜晶体管背板、发光结构以及保护膜，其中，
    所述保护膜位于所述薄膜晶体管背板和所述发光结构之间，所述保护膜覆盖所述发光二极管显示面板显示区域中的栅线和数据线。
  2. 根据权利要求1所述的发光二极管显示面板，其中，所述保护膜还覆盖所述发光二极管显示面板显示区域外围的电路。
  3. 根据权利要求1或2所述的发光二极管显示面板，其中，所述保护膜的至少一部分与所述发光结构中的发光层相接触。
  4. 根据权利要求1-3任一所述的发光二极管显示面板，其中，所述发光结构包括阴极，所述保护膜由导电材料制成且与所述阴极电连接。
  5. 根据权利要求4所述的发光二极管显示面板，其中，所述保护膜由透明导电材料制成。
  6. 根据权利要求5所述的发光二极管显示面板，其中，所述发光二极管显示面板采用顶发光模式，所述发光二极管显示面板还包括黑矩阵。
  7. 根据权利要求5或6所述的发光二极管显示面板，其中，所述保护膜由氧化铟锡制成。
  8. 根据权利要求4所述的发光二极管显示面板，其中，所述保护膜由金属制成。
  9. 一种显示装置，包括权利要求1-8中任一项所述的发光二极管显示面板。
  10. 一种发光二极管显示面板的制作方法，其中，所述发光二极管显示面板包括薄膜晶体管背板和发光结构，所述制作方法包括：
    制造薄膜晶体管背板；
    制造保护膜，所述保护膜覆盖所述发光二极管显示面板显示区域中的栅线和数据线；以及
    在所述保护膜上方制造所述发光结构中的一层。
  11. 根据权利要求10所述的发光二极管显示面板的制作方法，其中，所述保护膜还覆盖所述发光二极管显示面板显示区域外围的电路。
  12. 根据权利要求10或11所述的发光二极管显示面板的制作方法，还包括：在所述制造保护膜的步骤和在所述保护膜上方制造所述发光结构中的一层的步骤之间进行的：
    对所述保护膜进行退火。
  13. 根据权利要求10-12任一所述的发光二极管显示面板的制作方法，其中，在所述保护膜上方制造所述发光结构中的一层包括：利用掩膜蒸镀的方法在所述保护膜上形成所述发光结构的发光层。
  14. 根据权利要求13所述的发光二极管显示面板的制作方法，在形成所述发光结构的发光层之前还包括：
    在所述薄膜晶体管背板的上方形成所述发光结构的阳极；以及
    形成发光区界定层；其中，所述发光区界定层的一部分形成在所述阳极上；所述保护膜的一部分形成在所述发光区界定层上。
  15. 根据权利要求13或14所述的发光二极管显示面板的制作方法，在形成所述发光结构的发光层之后还包括：
    形成所述发光结构的阴极，其中，所述保护膜由导电材料制成且与所述阴极电连接。
  16. 根据权利要求15所述的发光二极管显示面板的制作方法，其中，所述保护膜由透明导电材料制成，所述发光二极管显示面板的制作方法还包括：
    形成黑矩阵。
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