WO2015194397A1 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- WO2015194397A1 WO2015194397A1 PCT/JP2015/066318 JP2015066318W WO2015194397A1 WO 2015194397 A1 WO2015194397 A1 WO 2015194397A1 JP 2015066318 W JP2015066318 W JP 2015066318W WO 2015194397 A1 WO2015194397 A1 WO 2015194397A1
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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Definitions
- Embodiments of the present invention relate to a plasma processing apparatus.
- a plasma processing apparatus used for plasma processing generally has a processing container, a mounting table, a gas supply unit, and an exhaust device.
- the mounting table is provided in the processing container, and the gas supply unit and the exhaust device are connected to a space in the processing container.
- a plasma processing apparatus described in Patent Document 1 has been proposed as a plasma processing apparatus that meets such demands.
- the plasma processing apparatus described in Patent Document 1 has two baffle plates interposed between a mounting table and a processing container.
- the first space above the two baffle plates includes a region where the object to be processed is disposed, and a gas supply unit is connected to the first space.
- An exhaust device is connected to the second space below the two baffle members.
- the two baffle plates are annular plates extending in the horizontal direction, and a plurality of openings are formed in the two baffle plates, and these openings are arranged in the circumferential direction.
- the degree of overlapping of the openings of the two baffle plates in the vertical direction is adjusted by rotating one of the two baffle plates in the circumferential direction.
- the conductance between the first space and the second space is adjusted, and the pressure of the first space is adjusted.
- the pressure in the first space cannot be set to a high pressure unless the distance between the two baffle plates is extremely reduced. That is, unless the distance between the two baffle plates is extremely reduced, the conductance between the first space and the second space cannot be reduced. However, when the interval between the two baffle plates becomes narrow, these baffle plates come into contact with each other and particles may be generated.
- the thickness of these two baffle plates is increased. There is a need to.
- the thickness of the two baffle plates is large, the conductance between the first space and the second space is small even if the two baffle plates are arranged so that the openings of both are completely overlapped.
- the pressure in the first space cannot be lowered.
- the plasma enters the second space.
- the baffle plate driving device is increased in size in order to cope with the accompanying increase in the weight of the baffle plate. Therefore, increasing the thickness of the baffle plate and increasing the size of the opening formed in the baffle plate are not realistic.
- a plasma processing apparatus for performing plasma processing on an object to be processed.
- the plasma processing apparatus includes a processing container, a mounting table, a baffle structure, a gas supply unit, an exhaust device, and a driving device.
- the mounting table is provided in the processing container and has a mounting area on which the object to be processed is mounted.
- the baffle structure is interposed between the mounting table and the processing container below the mounting region, and includes a first space including the mounting region and a second space below the mounting region in the processing container. Stipulate.
- the baffle structure has a first member and a second member.
- the first member has a first cylindrical portion extending between the mounting table and the processing container, and a plurality of through holes elongated in the vertical direction are arranged in the circumferential direction in the first cylindrical portion. Is formed.
- the second member includes a second cylindrical portion having an inner diameter that is larger than the outer diameter of the cylindrical portion of the first member.
- the gas supply unit is connected to the first space.
- the exhaust device is connected to the second space. The driving device moves the second cylindrical portion up and down in a region including a gap between the first member and the processing container.
- the through hole of the first cylindrical portion is formed into the second cylinder by adjusting the vertical positional relationship between the first cylindrical portion of the first member and the second cylindrical portion of the second member. It is possible to adjust the ratio of being shielded from the second space by the portion. Thereby, the conductance between the first space and the second space can be adjusted. Further, in a state where the second cylindrical portion faces the entire through hole formed in the first cylindrical portion, the conductance between the first space and the second space is determined by the conductance between the two cylindrical portions. Therefore, even if the gap between the first cylindrical portion and the second cylindrical portion has a certain length, that is, without requiring strict accuracy for the gap, the first space and the second cylindrical portion. A small conductance can be obtained between the space.
- the plasma processing apparatus may further include a control unit that controls the driving device.
- the control unit controls the driving device so as to set the position of the second member in the vertical direction to the first position, and the second position of the second member in the vertical direction is different from the first position.
- a second control for controlling the driving device to set the position.
- the pressure in the first space can be set in the second control to a pressure different from the pressure set in the first space in the first control. Therefore, after the object to be processed is processed using the plasma processing apparatus under one of the low pressure and the high pressure, the object is processed under the other of the low pressure and the high pressure in the same plasma processing apparatus.
- the body can be processed. Thereby, it is possible to process a to-be-processed object, changing a pressure in the same plasma processing apparatus.
- control unit can further control the gas supply unit.
- the gas supply unit supplies the first gas
- the gas supply unit supplies the first gas
- a different second gas may be supplied. According to this embodiment, it becomes possible to process an object to be processed while changing the gas type and pressure using the same plasma processing apparatus.
- a plasma processing apparatus capable of increasing the pressure adjustment range of a space in which an object to be processed is arranged.
- FIG. 6 is a graph showing the results of Experimental Example 1 and Comparative Experimental Example 1. 6 is a graph showing the results of Experimental Example 2 and Comparative Experimental Example 2. 5 is a graph showing the results of Experimental Example 3 and Comparative Experimental Example 3.
- FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an embodiment.
- FIG. 1 schematically shows a longitudinal sectional structure of the plasma processing apparatus 10.
- a plasma processing apparatus 10 shown in FIG. 1 is a capacitively coupled parallel plate plasma etching apparatus.
- the plasma processing apparatus 10 includes a processing container 12.
- the processing container 12 is made of, for example, aluminum whose surface is anodized.
- the processing container 12 has a side wall 12s.
- the side wall 12s has a substantially cylindrical shape.
- the central axis of the side wall 12s substantially coincides with the axis Z extending in the vertical direction.
- An opening 12g for loading or unloading the wafer W is provided in the side wall 12s.
- the opening 12g can be opened and closed by a gate valve 52.
- a mounting table 14 is provided in the processing container 12.
- the mounting table 14 is supported by the support unit 16.
- the support portion 16 is a substantially cylindrical insulating member, and extends upward from the bottom of the processing container 12. In one embodiment, the support portion 16 supports the mounting table 14 in contact with the lower peripheral edge portion of the mounting table 14.
- the mounting table 14 includes a lower electrode 18 and an electrostatic chuck 20.
- the lower electrode 18 has a substantially disk shape and is made of a conductor.
- a first high frequency power supply HFS is connected to the lower electrode 18 via a matching unit MU1.
- the first high-frequency power source HFS is a power source that mainly generates high-frequency power for plasma generation, and generates high-frequency power of 27 to 100 MHz, in one example, 40 MHz.
- the matching unit MU1 has a circuit for matching the output impedance of the first high-frequency power supply HFS and the input impedance on the load side (lower electrode 18 side).
- the second high frequency power supply LFS is connected to the lower electrode 18 via the matching unit MU2.
- the second high frequency power supply LFS mainly generates high frequency power (high frequency bias power) for ion attraction into the wafer W and supplies the high frequency bias power to the lower electrode 18.
- the frequency of the high frequency bias power is a frequency in the range of 400 kHz to 13.56 MHz, and in one example, 3 MHz.
- the matching unit MU2 has a circuit for matching the output impedance of the second high-frequency power supply LFS with the input impedance on the load side (lower electrode 18 side).
- the electrostatic chuck 20 is provided on the lower electrode 18.
- the electrostatic chuck 20 has a structure in which an electrode 20a that is a conductive film is disposed between a pair of insulating layers or insulating sheets.
- a DC power source 22 is electrically connected to the electrode 20a via a switch SW.
- the upper surface of the electrostatic chuck 20 constitutes a placement region 20r on which a wafer W as a workpiece is placed.
- electrostatic force such as Coulomb force.
- a focus ring FR is provided so as to surround the edge of the wafer W.
- the focus ring FR can be made of, for example, silicon or quartz.
- a flow path 18 a is formed inside the lower electrode 18.
- a refrigerant for example, cooling water
- the refrigerant supplied to the flow path 18a is returned to the chiller unit via the pipe 26b.
- the mounting table 14 is provided with a gas supply line 28.
- the gas supply line 28 supplies the heat transfer gas from the heat transfer gas supply mechanism, for example, He gas, between the upper surface of the electrostatic chuck 20 and the back surface of the wafer W.
- the plasma processing apparatus 10 includes an upper electrode 30.
- the upper electrode 30 is disposed above the lower electrode 18 so as to face the lower electrode 18.
- the lower electrode 18 and the upper electrode 30 are provided substantially parallel to each other.
- the upper electrode 30 is supported on the ceiling portion of the processing container 12 via an insulating shielding member 32.
- the upper electrode 30 can include an electrode plate 34 and an electrode support 36.
- the electrode plate 34 faces the space in the processing container 12 and provides a plurality of gas discharge holes 34a.
- the electrode plate 34 can be made of a low resistance conductor or semiconductor with little Joule heat.
- the electrode support 36 supports the electrode plate 34 in a detachable manner and can be made of a conductive material such as aluminum.
- the electrode support 36 may have a water cooling structure.
- a gas diffusion chamber 36 a is provided inside the electrode support 36.
- a plurality of gas flow holes 36 b communicating with the gas discharge holes 34 a extend downward from the gas diffusion chamber 36 a.
- the electrode support 36 is formed with a gas introduction port 36c for introducing a processing gas to the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas introduction port 36c.
- a gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow rate controller group 44.
- the gas source group 40 has a plurality of gas sources. These multiple gas sources are sources of multiple gases of different gas types.
- the valve group 42 has a plurality of valves.
- the flow rate controller group 44 has a plurality of flow rate controllers such as mass flow controllers.
- the plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via corresponding valves included in the valve group 42 and corresponding flow controllers included in the flow controller group 44, respectively.
- gas is supplied in a state where the gas from one or more gas sources selected from the plurality of gas sources of the gas source group 40 is controlled in flow rate via a corresponding flow rate controller and valve. Supplyed to the tube 38.
- the gas supplied to the gas supply pipe 38 reaches the gas diffusion chamber 36a, and is introduced into the space in the processing container 12 through the gas flow hole 36b and the gas discharge hole 34a.
- the gas source group 40, the flow rate controller group 44, the valve group 42, the gas supply pipe 38, and the upper electrode 30 constitute a gas supply unit GS according to an embodiment, and the gas supply unit GS will be described later. Connected to the first space S1.
- an exhaust pipe 48 is connected to the bottom of the processing vessel 12, and an exhaust device 50 is connected to the exhaust pipe 48. Thereby, the exhaust device 50 is connected to the second space S2 described later.
- the exhaust device 50 has a vacuum pump such as a turbo molecular pump.
- the plasma processing apparatus 10 may further include a control unit Cnt.
- the control unit Cnt is a computer including a processor, a storage unit, an input device, a display device, and the like, and controls each unit of the plasma processing apparatus 10.
- an operator can perform a command input operation and the like to manage the plasma processing apparatus 10 using the input device, and the operating status of the plasma processing apparatus 10 is visualized by the display device. Can be displayed.
- the storage unit of the control unit Cnt causes the respective components of the plasma processing apparatus 10 to execute processes according to a control program for controlling various processes executed by the plasma processing apparatus 10 by the processor and processing conditions.
- a program for processing, that is, a processing recipe is stored.
- gas is supplied into the processing container 12 from one or more gas sources selected from the plurality of gas sources of the gas source group 40.
- a high frequency electric field is generated between the lower electrode 18 and the upper electrode 30 by applying high frequency power for plasma generation to the lower electrode 18.
- plasma of the gas supplied into the processing container 12 is generated.
- processing of the wafer W for example, etching is performed by the generated plasma.
- ions may be attracted to the wafer W by applying a high-frequency bias power to the lower electrode 18.
- the plasma processing apparatus 10 further includes a baffle structure 60.
- the baffle structure 60 is interposed between the mounting table 14 and the side wall 12s of the processing container 12 below the mounting region 20r.
- the baffle structure 60 defines a first space S1 and a second space S2 in the processing container 12.
- the first space S1 is a space including a placement area 20r on which the wafer W is placed.
- the second space S2 is a space below the placement area 20r.
- the gas supply unit GS described above is connected to the first space S1, and the exhaust device 50 described above is connected to the second space S2.
- FIG. 2, FIG. 3, FIG. 4, FIG. 5, and FIG. 2 and 3 are perspective views schematically showing the first cylindrical portion of the first member and the second cylindrical portion of the second member of the baffle structure of one embodiment.
- 4 and 5 are broken perspective views showing the first member and the second member of the baffle structure of one embodiment.
- FIG. 6 is an enlarged cross-sectional view illustrating a part of the first cylindrical portion of the first member of the baffle structure and a part of the second cylindrical portion of the second member of the embodiment.
- 2 and 3 are perspective views used for understanding the explanation, and the sizes of the illustrated first cylindrical portion and the second cylindrical portion, and the through holes formed in the first cylindrical portion. The size and the number are different from the actual size of the first cylindrical portion and the second cylindrical portion, and the size and the number of the through holes formed in the first cylindrical portion.
- the baffle structure 60 includes a first member 61 and a second member 62.
- the first member 61 is configured by coating Y 2 O 3 on the surface of a metal such as aluminum or stainless steel.
- the first member 61 has a first cylindrical portion 61a, a lower annular portion 61b, and an upper annular portion 61c.
- the first cylindrical portion 61a has a substantially cylindrical shape, and is provided such that its central axis substantially coincides with the axis Z.
- the plate thickness of the first cylindrical portion 61a is, for example, 5 mm.
- the outer diameter of the 1st cylindrical part 61a is 550 mm, for example.
- the first cylindrical portion 61 a extends between the mounting table 14 and the side wall 12 s of the processing container 12.
- the first cylindrical portion 61a has a plurality of through holes 61h.
- the plurality of through holes 61h penetrate the first cylindrical portion 61a in the radial direction (that is, the radial direction) with respect to the axis Z.
- the plurality of through holes 61h have a long slit shape in the vertical direction.
- the plurality of through holes 61h are arranged in the circumferential direction with respect to the axis Z at a substantially uniform pitch so as to be distributed over the entire circumference of the first cylindrical portion 61a.
- each of the plurality of through holes 61h that is, the width in the direction orthogonal to the vertical direction of each of the plurality of through holes 61h is approximately 3 from the viewpoint of suppressing plasma leakage into the second space S2. .5 mm or less.
- the length in the vertical direction of each of the plurality of through holes 61h can be arbitrarily set according to the pressure adjustment range of the first space S1. For example, the length in the vertical direction of each of the plurality of through holes 61h is 30 mm.
- the lower annular portion 61b has an annular shape.
- the lower annular portion 61b is continuous with the lower end of the first cylindrical portion 61a, and extends radially inward from the lower end of the first cylindrical portion 61a.
- the upper annular portion 61c has an annular shape.
- the upper annular portion 61c is continuous with the upper end of the first cylindrical portion 61a and extends radially outward from the upper end of the first cylindrical portion 61a.
- the first member 61 includes a first cylindrical portion 61a, a lower annular portion 61b, and an upper annular portion 61c, which are separate members.
- the first member 61 has a separation structure, and the first cylindrical portion 61a and the lower annular portion 61c are separated. It may be a member created by assembling the annular portion 61b and the upper annular portion 61c together. Alternatively, the first member 61 may be an integrally molded member having the first cylindrical portion 61a, the lower annular portion 61b, and the upper annular portion 61c.
- the bottom 12b of the processing container 12 includes a substantially cylindrical support 12m.
- a cylindrical member 64 is provided above the support portion 12m.
- the cylindrical member 64 can be made of an insulator such as ceramic.
- the cylindrical member 64 extends along the outer peripheral surface of the support portion 16.
- An annular member 66 is provided on the cylindrical member 64 and the support portion 16.
- the annular member 66 may be made of an insulator such as ceramic.
- the annular member 66 extends along the upper surface of the lower electrode 18 to the vicinity of the edge of the electrostatic chuck 20. On the annular member 66, the above-described focus ring FR is provided.
- the inner edge portion of the lower annular portion 61 b of the first member 61 is disposed between the support portion 12 m and the cylindrical member 64.
- the support portion 12m and the cylindrical member 64 are fixed to each other by screws, for example. Accordingly, the inner edge portion of the lower annular portion 61 b of the first member 61 is sandwiched between the support portion 12 m and the cylindrical member 64.
- the side wall 12s of the processing container 12 includes an upper portion 12s1 and a lower portion 12s2.
- the plasma processing apparatus 10 includes a support member 68.
- the support member 68 has a substantially ring-shaped upper part 68a and a substantially ring-shaped lower part 68c, and the upper part 68a and the lower part 68c are connected via a substantially cylindrical intermediate part. Yes.
- the upper portion 68a of the support member 68 is sandwiched between the upper portion 12s1 and the lower portion 12s2 of the side wall 12s.
- the lower portion 68 c of the support member 68 extends radially inward in the processing container 12.
- the upper annular portion 61 c of the first member 61 is fixed to the lower portion 68 c of the support member 68.
- the upper annular portion 61c of the first member 61 is fixed to the lower portion 68c of the support member 68, for example, with a screw.
- the support member 68 includes an upper portion 68a, an intermediate portion, and a lower portion 68c that are separate members, that is, has a separation structure, and the upper portion 68a, the intermediate portion, and the lower portion 68c.
- the members may be created by assembling each other.
- the support member 68 may be an integrally molded member having an upper portion 68a, an intermediate portion, and a lower portion 68c.
- the second member 62 may be configured by applying a coating such as Y 2 O 3 on the surface of a metal such as aluminum or stainless steel.
- the second member 62 has a second cylindrical portion 62a and an annular portion 62b.
- the second cylindrical portion 62a has a substantially cylindrical shape, and is provided so that the central axis thereof substantially coincides with the axis Z.
- the second cylindrical portion 62a has an inner diameter that is larger than the outer diameter of the first cylindrical portion 61a.
- the inner diameter of the second cylindrical portion 62a is 550.4 mm
- the plate thickness of the second cylindrical portion 62a is 5 mm.
- the annular portion 62b of the second member 62 has a substantially ring shape.
- the annular portion 62b extends radially outward from the lower end of the second cylindrical portion 62a.
- the second member 62 has a second cylindrical portion 62a and an annular portion 62b which are separate members, that is, has a separation structure, and is created by assembling the second cylindrical portion 62a and the annular portion 62b to each other. It may be a member. Alternatively, an integrally molded member having the second cylindrical portion 62a and the annular portion 62b may be used.
- the annular portion 62b of the second member 62 is connected to a shaft body 69 as shown in FIG.
- the shaft body 69 is a feed screw in one embodiment, and the annular portion 62b is connected to the shaft body 69 via a nut.
- the shaft body 69 is connected to the drive device 70.
- the drive device 70 is, for example, a motor.
- the driving device 70 moves the second member 62 up and down along the shaft body 69.
- the second cylindrical portion 62a of the second member 62 moves up and down within a region including the gap between the first cylindrical portion 61a of the first member 61 and the side wall 12s of the processing container 12. ing.
- a plurality of shaft bodies arranged in the circumferential direction may be coupled to the annular portion 62 b of the second member 62.
- FIG. 7 is a cross-sectional view illustrating an example of the first member, the second member, and the shaft body.
- FIG. 8 is a perspective view schematically showing an example of a mechanism that realizes vertical movement of the second member.
- FIGS. 7 and 8 an example of a mechanism that realizes the vertical movement of the second member will be described with reference to FIGS. 7 and 8.
- FIG. 8 illustration of some components such as a coupler C1 and a coupler C2 to be described later is omitted.
- the shaft body 69 includes a threaded portion 69a, a shaft portion 69b, a coupler C1, and a coupler C2.
- the shaft portion 69b has a substantially cylindrical shape and extends in the vertical direction.
- the upper end of the shaft part 69 b is located in the processing container 12, and the lower end of the shaft part 69 b passes through the bottom part 12 b of the processing container 12 and is located outside the processing container 12.
- the lower end of the shaft portion 69b is connected to a rotation drive shaft 70a of a drive device 70 (a motor in one example) via a coupler C1.
- a sealing mechanism SL such as a magnetic fluid seal is provided between the shaft portion 69 b and the bottom portion 12 b of the processing container 12.
- the upper end of the shaft portion 69b is connected to the lower end of the screw portion 69a via the coupler C2.
- the screw part 69a extends in the vertical direction above the shaft part 69b.
- a nut 62n that is screwed into the threaded portion 69a is attached to the annular portion 62b of the second member 62.
- one or more shaft bodies 80 may be provided separately from the shaft body 69.
- the shaft body 80 has a substantially columnar shape, and extends in the vertical direction through a through hole provided in the annular portion 62 b of the second member 62.
- a bearing may be interposed between the shaft body 80 and the annular portion 62 b of the second member 62.
- the shaft body 80 can be fixed to the bottom 12b of the processing container 12 at the lower end and fixed to the support member 68 at the upper end, for example.
- the shaft body 80 is arranged in the circumferential direction with respect to the axis Z together with the shaft body 69.
- the shaft body 69 and the three shaft bodies 80 two shaft bodies 80 are depicted in FIG.
- the number of shaft bodies 80 is not limited to three. Further, a plurality of mechanisms including the shaft body 69, the coupler C1, the coupler C2, the sealing mechanism SL, and the driving device 70 may be arranged in the circumferential direction.
- the second cylindrical portion 62a moves downward, the plurality of through holes 61h formed in the first cylindrical portion 61a face the second cylindrical portion 62a. That is, it is not shielded by the second cylindrical portion 62a, and is in a state of directly communicating with the second space S2. That is, the first space S1 is in communication with the second space S2 only through the plurality of through holes 61h. In this state, the conductance of the gas flow path interposed between the first space S1 and the second space S2 is increased. Therefore, the pressure in the first space S1 is close to the pressure in the second space S2, and the pressure in the first space S1 can be set to a low pressure.
- the length GW in the radial direction of the gap GP between the first cylindrical portion 61a and the second cylindrical portion 62a can be set to a length of 0.4 mm, for example.
- FIG. 9 is a diagram showing an embodiment of a control system related to the baffle structure.
- the driving device 70 can be controlled by the control unit Cnt.
- the control unit Cnt receives signals from the displacement meter 90, the pressure gauge 92, and the pressure gauge 94.
- the change meter 90 measures the distance from the position in the vertical direction of the second member 62 or the reference position, and sends a signal indicating the measurement result to the control unit Cnt.
- the pressure gauge 92 measures the pressure in the first space S1 and sends a signal indicating the measurement result to the control unit Cnt.
- the pressure gauge 94 measures the pressure in the second space S2, and sends a signal indicating the measurement result to the control unit Cnt.
- the control unit Cnt receives the pressure in the first space S1 specified by the recipe, the signal indicating the measurement result of the displacement meter 90, the signal indicating the measurement result of the pressure gauge 92, and the signal indicating the measurement result of the pressure gauge 94. Then, a signal is sent to the driving device 70, and the vertical position of the second member 62 by the driving device 70 is controlled so that the pressure in the first space S1 becomes the pressure specified by the recipe.
- the plasma processing apparatus 10 by adjusting the vertical positional relationship between the first cylindrical portion 61a of the first member 61 and the second cylindrical portion 62a of the second member 62, the plurality of through holes 61h are formed in the first direction. It is possible to adjust the ratio of shielding with respect to the second space S2 by the two cylindrical portions 62a. Thereby, the conductance between 1st space S1 and 2nd space S2 can be adjusted.
- the conductance between the first space S1 and the second space S2 is mainly the gap GP between the two cylindrical portions. Is defined by the conductance. Therefore, even if the length in the radial direction of the gap GP between the first cylindrical portion 61a of the first member 61 and the second cylindrical portion 62a of the second member 62 is a certain length, that is, the gap GP. Therefore, a small conductance can be obtained between the first space S1 and the second space S2 without requiring strict accuracy.
- the first member 61 and the second member 62 have a cylindrical structure, so that Hard to bend. Therefore, even if the second member 62 is moved, the contact between the first cylindrical portion 61a and the second cylindrical portion 62a hardly occurs, and the generation of particles can be suppressed. Further, since the second member 62 can be formed thin, the second member 62 can be moved at high speed. Furthermore, since the plurality of through holes 1h are arranged in the circumferential direction, it is possible to reduce variation in the exhaust amount in the circumferential direction.
- the control unit Cnt performs the first control and the second control.
- the control unit Cnt controls the driving device 70 so as to set the position of the second member 62 in the vertical direction to the first position.
- the control unit Cnt controls the driving device 70 so as to set the position of the second member 62 in the vertical direction to a second position different from the first position.
- the first position may be a position above the second position or a position below.
- the pressure of the first space S1 is set to one of high pressure and low pressure by moving the second member 62 to the first position in the first control, and the first space S1.
- the wafer W can be processed. Further, by moving the second member 62 to the second position in the second control, the pressure in the first space S1 is set to the other of the high pressure and the low pressure, and the wafer W is processed in the first space S1. Can do.
- the first control and the second control may be alternately repeated.
- the control unit Cnt causes the gas supply unit GS to supply the first gas in the first control, and causes the gas supply unit GS to supply the second gas in the second control.
- the second gas is a gas different from the first gas, that is, a gas having a composition different from that of the first gas.
- the first control and the second control may be alternately repeated.
- a deposition gas is used as the first gas, and a corrosive gas is used as the second gas, so that the protective film is deposited on the film of the wafer W.
- the process and the etching process of the film of the wafer W can be performed alternately.
- the pressure to be set as the pressure of the first space S1 in the deposition processing is different from the pressure to be set as the pressure of the first space S1 in the etching processing. Therefore, the plasma processing can be performed in the same plasma processing apparatus 10 by alternately executing the first control and the second control.
- the plasma processing apparatus 10 it is possible to shorten the transition time required for switching the pressure in the first space S1 between such a deposition process and an etching process.
- the plasma treatment of the second example can be used for the purpose of successively etching the films of two different film types on the wafer W.
- the gas type of the gas to be used in the etching of one film and the pressure in the first space S1 are the same as those of the gas to be used in the etching of the other film It is different from the pressure of S1. Therefore, by alternately executing the first control and the second control, it is possible to perform such plasma processing in the same plasma processing apparatus 10.
- the plasma processing apparatus 10 it is possible to shorten the transition time required for switching the pressure of the first space S1 for switching from etching one film to etching the other film.
- the shape of the plurality of through holes 61h formed in the first cylindrical portion 61a may be any shape as long as the shape is long in the vertical direction.
- the shape of the through hole 61h may be an inverted triangular shape whose width becomes narrower as it goes downward.
- the shape of the through hole 61h may be a rhombus.
- the moving speed of the second member 62 by the driving device 70 may be constant speed or may change non-linearly.
- the pressure in the first space S1 during movement of the second member 62 can be changed linearly or nonlinearly.
- the driving device 70 is a motor, and the second member 62 is moved by driving the shaft body 69 that is a feed screw.
- the driving device 70 moves the second member 62 up and down. It may be a hydraulic or pneumatic cylinder for moving.
- the first high frequency power supply HFS is electrically connected to the lower electrode 18, but the first high frequency power supply HFS is electrically connected to the upper electrode 30. May be.
- the plasma processing apparatus 10 of the above-described embodiment is a capacitively coupled plasma processing apparatus.
- the plasma processing apparatus to which the idea disclosed by the description of the above-described embodiment can be applied is an arbitrary type of plasma.
- an inductively coupled plasma processing apparatus or a plasma processing apparatus using surface waves such as microwaves may be used.
- the pressure in the first space S1 and the pressure in the second space S2 were calculated under the following conditions.
- the “shielded state” described below indicates a state in which the second cylindrical portion 62a faces the entire through hole 61h, and thus the through hole 61h is shielded by the second cylindrical portion 62a. .
- the pressure in the first space S1 was 420 mTorr (5.6 ⁇ 10 1 Pa).
- the pressure in the second space S2 was 19.5 mTorr (2.6 Pa). Therefore, according to the plasma processing apparatus 10, the differential pressure between the first space S1 and the second space S2 can be increased, and as a result, the pressure of the first space S1 can be set to a high pressure. It was confirmed that.
- FIG. 10 is a diagram for explaining the comparative simulation 1, and shows the baffle plate 101 and the baffle plate 102 by expanding the circumferential direction in the horizontal direction in FIG.
- the thicknesses of both the baffle plate 101 and the baffle plate 102 were set to 3.5 mm.
- 3000 through holes 101h having a diameter of 3.5 mm are formed, and each of the through holes 101h is arranged in the radial direction.
- a configuration in which 200 sets of through-hole groups were evenly arranged in the circumferential direction was simulated.
- a configuration in which 200 through holes 102h having a long hole shape in the radial direction are arranged at an equal pitch in the circumferential direction was simulated.
- the length of the through hole 102h in the radial direction was 60 mm, and the width was set to 3.5 mm.
- the first space is changed while changing the flow rate of the N 2 gas both when the length L of the gap between the baffle plate 101 and the baffle plate 102 is set to 0.1 mm and when set to 0.6 mm.
- the pressure of S1 was calculated.
- FIG. 11 is a diagram illustrating the results of the simulation 1 for comparison.
- the horizontal axis indicates the flow rate of N 2 gas
- the vertical axis indicates the pressure in the first space S1.
- the “shielded state” indicates a state where the through hole 101h of the baffle plate 101 and the through hole 102h of the baffle plate 102 do not face each other as shown in FIG. Indicates a state in which the through hole 102 h of the baffle plate 102 faces the entire area of the through hole 101 h of the baffle plate 101.
- “L” indicates the length of the gap between the baffle plate 101 and the baffle plate 102.
- the pressure in the first space S1 could only be increased to a pressure of about 70 mm Torr (9.333 Pa). Further, when the length L of the gap between the baffle plate 101 and the baffle plate 102 is 0.1 mm, when a large amount of N 2 gas is supplied in a shielded state, the pressure in the first space S1 is reduced. The pressure could be increased to about 130 mm Torr (17.33 Pa).
- the pressure in the first space S1 is obtained as a result of the simulation 1 of the plasma processing apparatus 10 described above. It was considerably lower than the pressure in one space S1.
- setting the gap length L between the baffle plate 101 and the baffle plate 102 to be 0.1 mm is not a realistic setting because a situation such as contact between the baffle plate 101 and the baffle plate 102 is brought about. . From this, the superiority of the plasma processing apparatus 10 was confirmed.
- the plasma processing apparatus 10 including the baffle structure 60 including the first cylindrical portion 61a and the second cylindrical portion 62a having the same dimensions as those set in the simulation 1 50 sccm of N 2 gas is supplied into the processing vessel 12.
- the gain G when the frequency (hereinafter simply referred to as “frequency”) for alternately switching between the open state and the shield-like body was set to various frequencies was obtained.
- the “open state” is a state where the through hole 61h does not face the second cylindrical portion 62a.
- “Gain G” is defined by the following equation (1).
- comparative simulation 2 was performed.
- an exhaust device is provided for a plasma processing apparatus different from the plasma processing apparatus 10 in that an annular plate-shaped baffle plate is provided between the side wall 12 s of the processing vessel 12 and the mounting table 14 instead of the baffle structure 60.
- an annular plate-shaped baffle plate is provided between the side wall 12 s of the processing vessel 12 and the mounting table 14 instead of the baffle structure 60.
- the opening degree of the pressure control valve of 50 By adjusting the opening degree of the pressure control valve of 50, a shield-like body and an open state are formed, and various frequencies for alternately switching between the shield-like body and the open state are set, and the gain G is similarly obtained.
- the inner diameter of the baffle plate was set to 400 mm
- the outer shape of the baffle plate was set to 520 mm
- the thickness of the baffle plate was set to 6 mm.
- the baffle plate was an annular plate in which 6000 through holes having a diameter of 3 mm were evenly distributed. Moreover, in the comparative simulation 2, the state in which the pressure control valve of the exhaust device 50 has the minimum opening is set as the shielding state, and the state in which the pressure control valve of the exhaust device 50 has the maximum opening is in the open state. .
- FIG. 12 is a diagram showing the results of simulation 2 and comparative simulation 2.
- the horizontal axis indicates the frequency at which the open state and the shielding body are switched alternately
- the vertical axis indicates the gain G.
- the open state and the shield-like body are alternately switched by adjusting the opening degree of the pressure control valve of the exhaust device 50.
- the switched comparative simulation 2 it was possible to suppress a decrease in gain accompanying an increase in frequency.
- simulation 2 even when the frequency was 0.1 kHz, there was substantially no gain reduction, and even when the frequency was 1 kHz, a gain of ⁇ 20 dB was obtained. Therefore, according to the plasma processing apparatus 10, it was confirmed that a large increase / decrease in pressure can be realized at a high frequency.
- Comparative Experimental Example 1 500 sccm of N 2 gas is supplied into the processing vessel 12 of the plasma processing apparatus different from the plasma processing apparatus 10 of Experimental Example 1 in that the baffle plate of the simulation 2 is used instead of the baffle structure 60.
- the shield-like body was formed from the open state by controlling the pressure control valve of the exhaust device 50. And the time-dependent change of the pressure of 1st space S1 was observed. Further, the pressure rising time in the first space S1 and the pressure stabilization time in the first space S1 were obtained.
- the state in which the pressure control valve of the exhaust device 50 has the minimum opening is used as the shielding member, and the state in which the pressure control valve of the exhaust device 50 has the maximum opening is in the open state. did.
- FIG. 13 is a graph showing the results of Experimental Example 1 and Comparative Experimental Example 1.
- the horizontal axis indicates time
- the vertical axis indicates the pressure in the first space S1.
- FIG. 13 also shows the change over time of the pressure in the first space S1 of Experimental Example 1 and the change over time of the pressure of the first space S1 of Comparative Experimental Example 1.
- the stabilization time and rise time of Comparative Experimental Example 1 are 13.5 seconds and 6.7 seconds, respectively, while the stabilization time and rise time of Experimental Example 1 are 4.6 seconds and 2 seconds, respectively. 3 seconds.
- Experimental Example 2 500 sccm of N 2 gas is supplied into the processing vessel 12 of the plasma processing apparatus similar to that of Experimental Example 1, and the pressure of the first space S1 is changed by the movement of the second member 62 to the open state of Experimental Example 1. From 20 mTorr higher than the pressure in the first space S1 at 120 mTorr changed from 120 mTorr lower than the pressure in the first space S1 in the shielded state of Experimental Example 1, changes in the pressure in the first space S1 over time were observed. Further, the pressure stabilization time of the first space S1 and the pressure rise time of the first space S1 were obtained.
- the rise time is the pressure difference from the point in time when the amount of increase from the initial value of the pressure in the first space S1 reaches 10% of the pressure difference between the initial value and the ultimate pressure in the first space S1.
- the stabilization time is a time until substantially no change is observed in the pressure of the first space S1 after the shield is formed.
- Comparative Experimental Example 2 500 sccm of N 2 gas is supplied into the processing vessel 12 of the plasma processing apparatus similar to Comparative Experimental Example 1, and the pressure in the first space S1 is controlled from 20 mTorr by controlling the pressure control valve of the exhaust device 50. By changing the pressure to 120 mTorr, the change with time of the pressure in the first space S1 was observed. Further, the pressure stabilization time of the first space S1 and the pressure rise time of the first space S1 were obtained.
- FIG. 14 is a diagram showing the results of Experimental Example 2 and Comparative Experimental Example 2.
- the horizontal axis indicates time
- the vertical axis indicates the pressure in the first space S1.
- FIG. 14 shows the change over time of the pressure in the first space S1 of Experimental Example 2 and the change over time of the pressure of the first space S1 of Comparative Experimental Example 2.
- the speed at which the pressure in the first space S1 increases is high, and the time for the pressure in the first space S1 to stabilize to the pressure of 120 mTorr is large. It was shortened to.
- the stabilization time and rise time of Comparative Experimental Example 2 are 1.92 seconds and 1.09 seconds, respectively
- the stabilization time and rise time of Experimental Example 1 are 0.93 seconds and 0 respectively. .42 seconds.
- Experimental Example 3 the same plasma processing apparatus as in Experimental Example 1 was used, and the relationship between the flow rate of the N 2 gas supplied into the processing container 12 and the pressure in the first space S1 was obtained in each of the shield and the open state. It was.
- Comparative Experimental Example 3 the same plasma processing apparatus as in Comparative Experimental Example 1 was used, and the relationship between the flow rate of N 2 gas supplied into the processing container 12 and the pressure in the first space S1 in each of the shield and the open state. Asked.
- FIG. 15 is a diagram illustrating the results of Experimental Example 3 and Comparative Experimental Example 3.
- the horizontal axis indicates the flow rate of N 2 gas
- the vertical axis indicates the pressure in the first space S1.
- the relationship between the pressure of the N 2 gas flow rate and the first space S1 in the open state of Experimental Example 3 the pressure of the N 2 gas flow rate and the first space S1 in the open state of Comparative Experiment Example 3 The relationship was almost the same. From this, it was confirmed that according to the baffle structure 60 used in Experimental Example 3, the same pressure controllability as the pressure control valve of the exhaust device 50 can be obtained in the low pressure region.
- the relationship between the flow rate of N 2 gas and the pressure in the first space S1 in the shielding state of Experimental Example 3 shows that the N 2 gas in the shielding state of Comparative Experimental Example 3 when the flow rate of N 2 gas is 500 sccm or less.
- the flow rate and the pressure in the first space S1 were substantially the same.
- the baffle structure 60 used in Experimental Example 3 has a higher pressure in the first space S1 than the pressure control valve of the exhaust device 50 used in Comparative Experimental Example 3.
- the pressure could be set. From this, it was confirmed that according to the baffle structure 60 used in Experimental Example 3, the pressure control valve of the exhaust device 50 can also have excellent pressure controllability in the high pressure region.
- SYMBOLS 10 Plasma processing apparatus, 12 ... Processing container, 12s ... Side wall, 14 ... Mounting stand, 18 ... Lower electrode, 20 ... Electrostatic chuck, 20r ... Mounting area, 30 ... Upper electrode, GS ... Gas supply part, 50 ... Exhaust device 60 ... baffle structure 61 ... first member 61a ... first cylindrical portion 61h ... through hole 62 ... second member 62a ... second cylindrical portion 69 ... shaft body 70 ... driving device Cnt ... control unit, S1 ... first space, S2 ... second space.
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Abstract
Description
<シミュレーション1の条件>
・第1円筒部61aの外径:550mm
・第1円筒部61aの板厚:5mm
・貫通孔61hの幅:3.5mm
・貫通孔61hの長さ:30mm
・第2円筒部62aの板厚:5mm
・第2円筒部62aの内径:550.4mm
・ガス供給部GSによるガス供給:N2ガス(200sccm)
・貫通孔61hの状態:遮蔽状態
G=log20(ΔP/(最大圧力差)) …(1)
Claims (3)
- 被処理体に対してプラズマ処理を行うためのプラズマ処理装置であって、
処理容器と、
前記処理容器内に設けられた載置台であり、前記被処理体が載置される載置領域を有する該載置台と、
前記載置領域よりも下方で前記載置台と前記処理容器との間に介在して、前記処理容器内に、前記載置領域を含む第1空間と前記載置領域よりも下方の第2空間とを規定するバッフル構造であり、
前記載置台と前記処理容器との間において延びる第1円筒部を含み、鉛直方向に長尺の複数の貫通孔が周方向に配列するよう該第1円筒部に形成された第1部材、及び、
前記第1円筒部の外径よりも大径の内径を有する第2円筒部を含む第2部材、
を有する該バッフル構造と、
前記第1空間に接続されたガス供給部と、
前記第2空間に接続された排気装置と、
前記第1部材と前記処理容器との間の間隙を含む領域で前記第2円筒部を上下に移動させるための駆動装置と、
を備える、プラズマ処理装置。 - 前記駆動装置を制御する制御部を更に備え、
前記制御部は、
前記第2部材の鉛直方向における位置を第1の位置に設定するよう前記駆動装置を制御する第1制御と、
前記第2部材の鉛直方向における位置を前記第1の位置とは異なる第2の位置に設定するよう前記駆動装置を制御する第2制御と、
を実行する請求項1に記載のプラズマ処理装置。 - 前記制御部は、
前記第1制御において前記ガス供給部に、第1のガスを供給させ、
前記第2制御において前記ガス供給部に、前記第1のガスと異なる第2のガスを供給させる、
請求項2に記載のプラズマ処理装置。
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