WO2015190739A1 - Film métallique monocristallin contenant des atomes d'hydrogène ou des ions hydrogène et procédé pour le fabriquer - Google Patents

Film métallique monocristallin contenant des atomes d'hydrogène ou des ions hydrogène et procédé pour le fabriquer Download PDF

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WO2015190739A1
WO2015190739A1 PCT/KR2015/005552 KR2015005552W WO2015190739A1 WO 2015190739 A1 WO2015190739 A1 WO 2015190739A1 KR 2015005552 W KR2015005552 W KR 2015005552W WO 2015190739 A1 WO2015190739 A1 WO 2015190739A1
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single crystal
metal film
hydrogen
film containing
crystal metal
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PCT/KR2015/005552
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English (en)
Korean (ko)
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박호범
이민용
박선미
윤희욱
김한수
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한양대학교 산학협력단
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Priority claimed from KR1020150077600A external-priority patent/KR101767242B1/ko
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to US15/317,590 priority Critical patent/US20170191187A1/en
Publication of WO2015190739A1 publication Critical patent/WO2015190739A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process

Definitions

  • the present invention relates to a single crystal metal film containing hydrogen atoms or hydrogen ions and a method for manufacturing the same, and more particularly, to a single crystal metal containing hydrogen atoms or hydrogen ions oriented only on (111) crystal planes on or without a substrate. Membrane and its preparation method.
  • the growth rate of the metal particles does not increase continuously due to mutual stress between the particles and saturation as it is. To reach the state.
  • a single crystal copper substrate having a direct-growth (111) crystal plane can be produced through conventional sputtering or evaporation and subsequent heat treatment, but a single crystal copper film (Cu film) having such a (111) crystal plane ),
  • a single crystal copper film (Cu film) having such a (111) crystal plane There is a disadvantage in that an expensive underlayer such as expensive magnesium oxide (MgO) or sapphire (111) single crystal is necessary.
  • the metal thin film layer (Cu) by injecting and heat-treating a hydrogen / argon mixed gas under the conditions of 800 ⁇ 1000 °C, 1 ⁇ 760 torr on the substrate ) Is disclosed, but it can be seen that the metal thin film layer is formed on a substrate such as a silicon wafer, and does not have a single crystal structure oriented only to the (111) crystal plane (Patent Document 1).
  • Nonpatent literature 1 a method of obtaining a single crystal copper thin film oriented to a (111) crystal plane using platinum as a buffer layer on an MgO substrate, but also requires a complicated process of interposing a buffer layer such as platinum while using an expensive MgO substrate.
  • Non-Patent Document 3 a technique of growing a single crystal nickel film oriented to a (111) crystal plane having a thickness of 170 nm by an ultra-high vacuum laser ablation deposition method is known, but an expensive sapphire substrate is still used. It is not easy to commercialize because it has to go through a complicated process called vacuum laser ablation deposition method (Non-Patent Document 3).
  • the present inventors have conducted researches that can single crystallize a single crystal metal film even without an expensive substrate.
  • the present inventors have complicated processes by optimizing heat treatment conditions of a metal precursor having a specific thickness, including using hydrogen gas.
  • the present invention has been completed by focusing on the fact that a single crystal metal film containing hydrogen atoms or hydrogen ions oriented only to the (111) crystal plane can be produced regardless of the crystallinity of the metal precursor and the orientation of the crystal plane without going through.
  • Patent Literature 1 Korean Registered Patent No. 10-1132706
  • Non-Patent Document 1 T. Mewes et al., Surface Science 481 , 87-96 (2001)
  • Non-Patent Document 2 JM Purswani et al., Thin Solid Films 515 , 1166-1170 (2006).
  • Non-Patent Document 3 IV Malikov et al., Thin Solid Films 519 , 527-535 (2010)
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a single crystal metal film containing hydrogen atoms or hydrogen ions which are oriented only to the (111) crystal plane only by a heat treatment process and have improved electrical conductivity, and a method of manufacturing the same. It is to provide.
  • the present invention for achieving the above object provides a single crystal metal film containing hydrogen atoms or hydrogen ions oriented only on (111) crystal planes on or without a substrate.
  • the substrate is characterized in that the single crystal substrate or non-monocrystalline substrate.
  • the substrate may be a silicon substrate, a metal oxide substrate, or a ceramic substrate.
  • the substrate is silicon (Si), silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ), zinc oxide (ZnO), zirconium dioxide (ZrO 2 ), nickel oxide (NiO), hafnium oxide (HfO 2 ), oxidizing agent Cobalt (CoO), cupric oxide (CuO), ferric oxide (FeO), magnesium oxide (MgO), alpha-aluminum oxide ( ⁇ -Al 2 O 3 ), aluminum oxide (Al 2 O 3 ), strontium titanate (SrTiO 3 ), lanthanum aluminate (LaAlO 3 ), titanium dioxide (TiO 2 ), tantalum dioxide (TaO 2 ), niobium dioxide (NbO 2 ), and boron nitride (BN) It is done.
  • the single crystal metal film containing hydrogen atoms or hydrogen ions includes copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), ruthenium (Ru), platinum (Pt), palladium (Pd), and gold (Au). ), Silver (Ag), aluminum (Al), chromium (Cr), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), iridium (Ir), and zirconium (Zr).
  • the single crystal metal film containing hydrogen atoms or hydrogen ions is characterized by being in the form of a foil, a flat plate, a block or a tube.
  • the present invention provides a method for preparing a monocrystalline metal precursor, comprising the steps of: i) preparing a monocrystalline metal precursor that is not amorphous, preferentially polycrystalline or (111) crystalline;
  • step ii) heat treating the metal precursor of step i) under a hydrogen atmosphere to form a single crystal metal film oriented only to the (111) crystal plane;
  • step iii) cooling the single crystal metal film oriented only to the (111) crystal plane of step ii); and providing a method for producing a single crystal metal film containing hydrogen atoms or hydrogen ions.
  • the metal precursor of step i) is copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), ruthenium (Ru), platinum (Pt), palladium (Pd), gold (Au), silver ( Ag), aluminum (Al), chromium (Cr), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), It is characterized in that any one selected from the group consisting of tungsten (W), uranium (U), vanadium (V), iridium (Ir), and zirconium (Zr).
  • the metal precursor of step i) is characterized in that the shape of the foil, plate, block or tubular.
  • the metal precursor of step i) is characterized in that the commercialized copper foil.
  • the commercialized copper foil is characterized in that the thickness ranges from 1 ⁇ m to 20 ⁇ m.
  • the thickness is characterized in that the maximum size of the copper particles present in the commercialized copper foil having a specific thickness in the range of 1 ⁇ m to 20 ⁇ m exceeds that specific thickness.
  • the thickness is characterized by imparting physical deformation to commercialized copper foils in the range of 1 ⁇ m to 20 ⁇ m.
  • the hydrogen atmosphere of step ii) is characterized in that the hydrogen is injected into 10 ⁇ 1,000 sccm, or hydrogen 10 ⁇ 1,000 sccm + argon 10 ⁇ 1,000 sccm.
  • Heat treatment of step ii) is characterized in that performed for 1 to 10 hours at 900 ⁇ 1600 °C, 1 mtorr ⁇ 300,000 torr.
  • Cooling of step iii) is characterized in that it is carried out slowly at a cooling rate of 10 ⁇ 50 °C / min.
  • Cooling of step iii) is characterized in that is carried out while injecting hydrogen at 10 ⁇ 1,000 sccm.
  • the present invention also provides a display driver chip comprising a single crystal metal film containing the hydrogen atom or hydrogen ion.
  • this invention provides the semiconductor element containing the single crystal metal film
  • the present invention provides a lithium secondary battery comprising the single crystal metal film containing the hydrogen atom or hydrogen ion.
  • the present invention provides a fuel cell including the single crystal metal film containing the hydrogen atom or hydrogen ion.
  • the present invention provides a solar cell including the single crystal metal film containing the hydrogen atom or hydrogen ion.
  • the present invention also provides a gas sensor comprising the single crystal metal film containing the hydrogen atom or hydrogen ion.
  • a single crystal metal film containing hydrogen atoms or hydrogen ions oriented only to (111) crystal planes by a simple heat treatment process from a metal precursor having crystallinity and preferential orientation of crystal planes without an expensive substrate is used for foil, plate, block or It is possible to form in a variety of tubular forms, and contains a hydrogen atom or hydrogen ions to improve the electrical conductivity can be applied to the display driving chip, semiconductor device, lithium secondary battery, fuel cell, solar cell or gas sensor material.
  • XRD X-ray diffraction analysis
  • EBSD electron back scattering diffraction
  • FIGS. 2 (a) and 2 (b) show X-ray diffraction analysis (XRD) patterns and electron back scattering diffraction (EBSD) maps 200 of a single crystal copper film directly grown in the same direction on a conventional single crystal MgO 200 substrate, respectively.
  • XRD X-ray diffraction analysis
  • EBSD electron back scattering diffraction
  • Figure 3 (a) and (b) is an X-ray diffraction (XRD) pattern showing a scanning electron microscope (SEM) image and the crystal growth direction before and after the heat treatment, respectively, of the copper foil having conventionally superior orientation.
  • XRD X-ray diffraction
  • Figure 6 (a) and (b) is a scanning electron microscope (SEM) image and X-ray diffraction (XRD) pattern of the copper film heat-treated according to Example 1 of the present invention, respectively.
  • Figure 7 (a) and (b) is a scanning electron microscope (SEM) image and X-ray diffraction (XRD) pattern of the copper film heat-treated according to Comparative Example 1, respectively.
  • Example 8 (a) and (b) are electron back scattering diffraction (EBSD) patterns of copper films heat-treated according to Example 1 and Comparative Example 1 of the present invention, respectively.
  • EBSD electron back scattering diffraction
  • Example 9 is a graph showing the electrical conductivity of the copper film heat-treated according to Example 1 of the present invention and the electrical conductivity change of the copper film prepared from Comparative Examples 1 and 2.
  • the metal film when a metal film is formed on an amorphous or amorphous substrate such as a silicon oxide film (SiO 2 ), the metal film has a polycrystalline structure, and a metal foil or sheet such as copper, nickel, or cobalt without a substrate is formed. Even after heat treatment, since the metal foil or the sheet itself is polycrystalline, the formed metal film also has grains and grain boundaries, and is still poor in quality as polycrystalline.
  • a metal foil or sheet such as copper, nickel, or cobalt without a substrate is formed.
  • a copper film grown directly on a conventional single crystal (111) magnesium oxide (MgO) or (200) magnesium oxide substrate is grown in the same direction to have (111) single crystal or (200) single crystal copper without grain boundaries.
  • a film can be formed.
  • an expensive single crystal (111) or (200) magnesium oxide (MgO) or a sapphire substrate was necessary.
  • the crystal surface is first (111) crystal surface only by a special heat treatment process of the polycrystalline metal foil having the orientation
  • the single crystal metal film oriented only could be formed.
  • the present invention provides a single crystal metal film containing hydrogen atoms or hydrogen ions oriented only on (111) crystal planes on or without a substrate by performing heat treatment in a hydrogen atmosphere.
  • the present invention it is possible to form a single crystal metal film containing a hydrogen atom or a hydrogen ion without an expensive single crystal substrate such as magnesium oxide or sapphire, but it is possible to use a conventional single crystal substrate to form a single crystal metal film. Of course, it is also possible to use a non single-crystalline substrate.
  • the substrate may be a silicon substrate, a metal oxide substrate, or a ceramic substrate, and examples thereof include silicon (Si), silicon dioxide (SiO 2 ), and silicon nitride (Si 3 N 4).
  • BN boron nitride
  • the single crystal metal film containing hydrogen atoms or hydrogen ions oriented only to the (111) crystal plane of the present invention includes copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), ruthenium (Ru), and platinum.
  • Pt palladium (Pd), gold (Au), silver (Ag), aluminum (Al), chromium (Cr), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh) , Silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), iridium (Ir), and zirconium (Zr) Copper (Cu) is more preferred, but is not limited thereto.
  • the single crystal metal film containing hydrogen atoms or hydrogen ions oriented only to the (111) crystal plane of the present invention can be formed regardless of its shape, and may be formed in any form including foil, flat plate, block or tubular shape. Although possible, the foil form is preferred.
  • the present invention comprises the steps of: i) preparing a single crystalline metal precursor that is not amorphous, preferentially polycrystalline or (111) crystal plane;
  • step ii) heat treating the metal precursor of step i) under a hydrogen atmosphere to form a single crystal metal film oriented only to the (111) crystal plane;
  • a single crystal metal precursor for forming a single crystal metal film a single crystal metal precursor is prepared that is not amorphous, preferentially polycrystalline or (111) crystal plane.
  • One of the technical features of the present invention is to maximize the grain growth from the metal precursor having the crystallinity of the metal precursor and the preferential orientation of the crystal surface to single crystals of the (111) crystal surface through recrystallization and abnormal grain growth only by heat treatment. Since a single crystal metal film can be provided, all of the metal precursors of various crystal structures as described above may be starting materials.
  • metal precursor copper (Cu), nickel (Ni), cobalt (Co), iron (Fe), ruthenium (Ru), platinum (Pt), palladium (Pd), gold (Au), silver (Ag), aluminum (Al), chromium (Cr), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W) , Uranium (U), vanadium (V), iridium (Ir), and zirconium (Zr) can be used in any one of the group, and also in the form of the metal precursor, foil, plate, block or tubular Although any form may be included, foil form is preferable for formation of a uniform single crystal metal film by heat treatment, and in particular, commercially available copper foil, which is easily available and inexpensive, may be more preferably used.
  • the thickness of the metal precursor is another important parameter as a factor capable of forming a single crystal metal film oriented only on the (111) crystal plane.
  • the metal precursor when the metal precursor is in the form of a foil, preferably in the case of commercialized copper foil affects the solid solubility for carbon during the recrystallization process after heat treatment according to the thickness, according to the present invention
  • the commercially available copper foil preferably has a thickness in the range of 1 ⁇ m to 20 ⁇ m. If the thickness of the commercialized copper foil is less than 1 ⁇ m, it is too thin to perform a smooth heat treatment process, and recrystallization cannot be expected.
  • the single crystal metal is oriented only to the (111) crystal plane even if the heat treatment is performed under the same conditions. No film can be obtained, only a metal film having various crystal plane orientations as in conventional commercialized copper foil or having a crystal structure in which the (100) crystal plane is dominant is obtained.
  • various sizes of copper particles are mixed in commercialized copper foils having a thickness in the range of 1 ⁇ m to 20 ⁇ m, and the maximum size of copper particles in a commercialized copper foil of any specific thickness exceeds that specific thickness. It is preferable that a uniform single crystal copper film containing hydrogen atoms or hydrogen ions oriented only to the (111) crystal plane can be obtained.
  • the metal precursor which has a thickness of 1 ⁇ m to 20 ⁇ m, provides physical deformation, such as elongation, to commercialized copper foils to more efficiently contain hydrogen atoms or hydrogen ions during the heat treatment process. It is more preferable as it can.
  • step ii) the metal precursors of various crystal structures prepared in step i) are heat-treated under a hydrogen atmosphere to form a single crystal metal film oriented only to the (111) crystal plane.
  • step ii) prevents oxidation of the metal film and contains hydrogen atoms or hydrogen ions in the metal film to improve electrical conductivity for 1 to 10 hours at 900-1,600 ° C. and 1 mtorr to 30000 torr under hydrogen atmosphere. Perform.
  • the hydrogen atmosphere is preferably heat treated while being injected with 10 to 1,000 sccm of hydrogen or 10 to 1,000 sccm of hydrogen + 10 to 1,000 sccm of argon.
  • thermal energy increases as the melting point approaches about 1,083 ° C., so that grain growth may occur.
  • the sublimation of copper atoms on the surface of the foil is more extreme, resulting in deterioration of the roughness of the surface.
  • the bulk inside of the foil is recrystallized into the (111) crystal plane, which is the most thermodynamically stable state, so that the surface roughness is prevented from deteriorating, and the foil has a foil below a certain thickness so that grain growth can occur.
  • the reduced heat capacity of the smaller thickness requires low thermal energy to reach the thermodynamically stable state of the bulk inside the foil, and softens by thermally activated diffusion of metal atoms even at low temperatures. .
  • heat treatment using hydrogen causes penetration and absorption of hydrogen molecules to the copper surface to increase the flow rate, so that they contain hydrogen atoms or hydrogen ions, and also accelerate the migration of copper atoms. This results in a lower melting point and rearranges the surface in the semi-melting state in the same direction as the bulk particle direction.
  • the foil having a preferred orientation through the cold rolling process it is possible to maximize the recrystallization and grain growth by reducing the energy barrier to the stabilized state compared to the manufacturing method with a foil having a variety of crystal surface orientation.
  • temperature, pressure, time, and hydrogen, or a rate of injecting hydrogen and argon mixed gas are variables. If the temperature is outside the above range, a single crystal metal film oriented only to the (111) crystal plane is not formed. Therefore, in the present invention, by controlling the process parameters for the heat treatment of step ii) within the above range it is possible to form a single crystal metal film oriented only to the (111) crystal plane by crystallizing the metal precursor.
  • the present invention is fundamentally different from the technical idea of forming a single crystalline metal thin film on a substrate using a conventional single crystal substrate, or forming a polycrystalline metal film by heat treating a metal precursor even when the substrate is not used.
  • the present invention heat-treats the metal precursor having an arbitrary size regardless of the size of the metal precursor as it is, under a hydrogen atmosphere. Since a single crystal metal film containing hydrogen atoms or hydrogen ions can be produced, commercialization by mass production can be realized.
  • a single crystal metal film containing hydrogen atoms or hydrogen ions oriented only to the (111) crystal plane which is an object of the present invention, can be prepared.
  • the cooling is preferably carried out slowly at a cooling rate of 10 ⁇ 50 °C / min.
  • care must be taken because cracks may occur in the process of uniformly growing the metal film.
  • in order to prevent the oxidation atmosphere that may occur during the cooling process may be cooled while injecting hydrogen at 10 ⁇ 1,000 sccm.
  • a display driving chip, a semiconductor device, a lithium secondary battery, a fuel cell, a solar cell or a gas comprising a single crystal metal film containing hydrogen atoms or hydrogen ions oriented only in the (111) crystal plane prepared in the present invention Sensors and the like can be provided.
  • a copper foil Alfar aesar, 99.9%, USA
  • hydrogen was injected at 100 sccm for 2 hours at 1,005 ° C. and 500 torr.
  • the heat treatment was performed to form a copper film.
  • the formed copper film was cooled at a rate of 10 ° C./min to prepare a single crystal copper film containing hydrogen atoms or hydrogen ions.
  • Table 1 shows the heat treatment process parameters according to Examples 1 and 2 and Comparative Examples 1 and 2.
  • Cooling rate is all 10 °C / min
  • Figure 4 shows the time-of-flight secondary ion mass spectroscopy (TOF-SIMS) to confirm the state of the surface of the copper film heat-treated according to Examples 1, 2 and Comparative Example 1 of the present invention It shows the result of performing. As shown in FIG. 4, according to Examples 1 and 2 of the present invention, it is confirmed that the inflow copper film contains hydrogen atoms or hydrogen ions while the flow rate is increased by heat treatment under a hydrogen atmosphere, and the copper film contains hydrogen atoms or hydrogen ions. Can be.
  • TOF-SIMS time-of-flight secondary ion mass spectroscopy
  • FIG. 5 (a) and 5 (b) show a scanning electron microscope (SEM) image and an X-ray diffraction (XRD) pattern of a commercially available copper foil according to Example 1 of the present invention, respectively.
  • SEM scanning electron microscope
  • XRD X-ray diffraction
  • Example 6 (a) and (b) show a scanning electron microscope (SEM) image and an X-ray diffraction (XRD) pattern of the copper film heat-treated according to Example 1 of the present invention, respectively, confirming that the copper film is free from grain boundary. From the X-ray diffraction pattern, it was confirmed that a single crystal copper film oriented only to the (111) crystal plane was formed due to recrystallization by heat treatment.
  • SEM scanning electron microscope
  • XRD X-ray diffraction
  • 8 (a) and 8 (b) show the electron backscatter diffraction (EBSD) characteristics in order to further analyze the crystal plane orientation of the copper film formed by heat treatment from Example 1 and Comparative Example 1 of the present invention, respectively.
  • 8 (a) shows no grain boundaries and defects in the entire area, and a single crystal copper film oriented only on the (111) plane is formed, while in FIG. 8 (b), grain boundaries and defects are observed. Is found.
  • Figure 9 shows the electrical conductivity of the single crystal copper film containing hydrogen atoms or hydrogen ions prepared in Example 1 of the present invention.
  • the electrical conductivity changes of the copper films prepared from Comparative Examples 1 and 2 are also shown.
  • FIG. 9 it can be seen that the single crystal copper film containing the hydrogen atom or the hydrogen ions prepared in Example 1 of the present invention showed an improvement effect of about 22.4% as a result of the increase in electrical conductivity.
  • a single crystal metal film containing hydrogen atoms or hydrogen ions oriented only to (111) crystal planes only under a heat treatment process under a hydrogen atmosphere from a metal precursor having crystallinity and preferential orientation of crystal planes without an expensive substrate is foil or plate , Block or tube type, and can be formed in various forms, and it contains hydrogen atoms or hydrogen ions to improve electrical conductivity, so it can be applied to materials for display driving chips, semiconductor devices, lithium secondary batteries, fuel cells, solar cells, or gas sensors. Can be.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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Abstract

La présente invention concerne un film métallique monocristallin contenant des atomes d'hydrogène ou des ions hydrogène, qui est orienté uniquement avec la face cristalline (111) sur un substrat ou sans substrat, et un procédé pour le fabriquer. Selon la présente invention, un film métallique monocristallin contenant des ions hydrogène, qui est orienté uniquement avec la face cristalline (111), peut être formé en diverses formes, telles qu'une feuille, une plaque plate, un bloc et un tube, même sans substrat coûteux, seulement en soumettant un précurseur métallique ayant une cristallinité et une orientation préférée de face cristalline à un processus de traitement à chaud sous une atmosphère d'hydrogène. En outre, la conductivité électrique étant améliorée parce qu'il contient des atomes d'hydrogène ou des ions hydrogène, le film métallique monocristallin peut être utilisé en tant que matériau pour une puce de commande d'affichage, un dispositif semiconducteur, une batterie secondaire au lithium, une pile à combustible, une cellule solaire ou un capteur de gaz.
PCT/KR2015/005552 2014-06-09 2015-06-03 Film métallique monocristallin contenant des atomes d'hydrogène ou des ions hydrogène et procédé pour le fabriquer WO2015190739A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/317,590 US20170191187A1 (en) 2014-06-09 2015-06-03 Single crystal metal film containing hydrogen atoms or hydrogen ions and method for manufacturing same

Applications Claiming Priority (4)

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KR20140069286 2014-06-09
KR10-2014-0069286 2014-06-09
KR10-2015-0077600 2015-06-01
KR1020150077600A KR101767242B1 (ko) 2014-06-09 2015-06-01 수소 원자 또는 수소 이온을 함유하는 단결정 금속막 및 그 제조방법

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163303A (ja) * 1992-11-17 1994-06-10 Japan Energy Corp 単結晶磁性薄膜の製造方法
WO2011105530A1 (fr) * 2010-02-26 2011-09-01 独立行政法人産業技術総合研究所 Stratifié de film de carbone
JP2012188315A (ja) * 2011-03-10 2012-10-04 National Institute For Materials Science 金属酸化物からなる板状単結晶体、その金属酸化物薄膜、それらの製造方法、および、それらを用いた抵抗変化型素子
KR20130020351A (ko) * 2011-08-19 2013-02-27 한국전기연구원 그래핀 박막의 형성방법 및 그 방법에 의해 제조된 그래핀
KR20130112228A (ko) * 2012-04-03 2013-10-14 한국전기연구원 금속산화물에 의해 전도성이 향상된 그래핀 투명 전도성 필름

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163303A (ja) * 1992-11-17 1994-06-10 Japan Energy Corp 単結晶磁性薄膜の製造方法
WO2011105530A1 (fr) * 2010-02-26 2011-09-01 独立行政法人産業技術総合研究所 Stratifié de film de carbone
JP2012188315A (ja) * 2011-03-10 2012-10-04 National Institute For Materials Science 金属酸化物からなる板状単結晶体、その金属酸化物薄膜、それらの製造方法、および、それらを用いた抵抗変化型素子
KR20130020351A (ko) * 2011-08-19 2013-02-27 한국전기연구원 그래핀 박막의 형성방법 및 그 방법에 의해 제조된 그래핀
KR20130112228A (ko) * 2012-04-03 2013-10-14 한국전기연구원 금속산화물에 의해 전도성이 향상된 그래핀 투명 전도성 필름

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