WO2015182576A1 - 半導体パッケージ及びその製造方法 - Google Patents
半導体パッケージ及びその製造方法 Download PDFInfo
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- WO2015182576A1 WO2015182576A1 PCT/JP2015/065014 JP2015065014W WO2015182576A1 WO 2015182576 A1 WO2015182576 A1 WO 2015182576A1 JP 2015065014 W JP2015065014 W JP 2015065014W WO 2015182576 A1 WO2015182576 A1 WO 2015182576A1
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- WIPO (PCT)
- Prior art keywords
- semiconductor package
- bonding
- aluminum
- insulating member
- fine particles
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000002131 composite material Substances 0.000 claims abstract description 42
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 34
- 239000010432 diamond Substances 0.000 claims abstract description 34
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000010419 fine particle Substances 0.000 claims abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 28
- 230000017525 heat dissipation Effects 0.000 claims abstract description 26
- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910001923 silver oxide Inorganic materials 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000004332 silver Substances 0.000 claims abstract description 15
- 238000007747 plating Methods 0.000 claims description 33
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 32
- 239000010931 gold Substances 0.000 description 13
- 239000002344 surface layer Substances 0.000 description 7
- 238000005219 brazing Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- -1 amine compounds Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C26/00—Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
- B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
- B23K35/3602—Carbonates, basic oxides or hydroxides
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/02—Alloys containing less than 50% by weight of each constituent containing copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/06—Alloys containing less than 50% by weight of each constituent containing zinc
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
- B22F2301/255—Silver or gold
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2302/00—Metal Compound, non-Metallic compound or non-metal composition of the powder or its coating
- B22F2302/25—Oxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Definitions
- the present invention relates to a semiconductor package and a manufacturing method thereof.
- a semiconductor element such as a semiconductor laser element used for optical communication or a high-function MPU (microprocessing unit)
- MPU microprocessing unit
- how efficiently the heat generated from the element is released can prevent malfunction. Is very important for. Since these semiconductor elements are generally housed and used in a semiconductor package, in order to operate the semiconductor element housed in the package safely and stably, the heat generated during the operation of the element is efficiently removed from the package. It is necessary to dissipate well. This heat dissipation is usually achieved by transferring heat from a semiconductor element as a heat source through a heat radiating member joined thereto.
- Patent Document 3 by forming a ⁇ -type SiC layer on the surface of diamond particles, the formation of low-conductivity metal carbide formed at the time of compounding is suppressed, and wettability with molten metal is improved. Thus, the thermal conductivity of the obtained metal-diamond composite material is improved.
- this metal-diamond composite material it has been proposed to use aluminum as a metal matrix (Patent Document 3).
- an insulating member is bonded onto the heat dissipation member using the bonding material A, and further bonded onto the heat dissipation member or the insulating member.
- the semiconductor is bonded using the material B.
- a brazing material or the like using an active metal is used for these bonding materials.
- an object of the present invention is to provide a semiconductor package that is inexpensive and excellent in heat dissipation.
- a semiconductor package is laminated in the order of a heat dissipation member, a bonding layer, and an insulating member, wherein the heat dissipation member is made of an aluminum-diamond composite including diamond particles and a metal containing aluminum,
- the content of diamond particles of the aluminum-diamond composite is 40% by volume or more and 75% by volume or less of the entire aluminum-diamond composite.
- the insulating member is alumina, silicon nitride, or aluminum nitride.
- At least one type of plating treatment containing Ni, Ag, or Au is performed on a joint portion between the heat dissipation member and the joining layer.
- At least one type of plating treatment containing Ni, Ag, or Au is performed on a joint portion between the insulating member and the joining layer.
- At least one type of plating treatment containing Ni, Ag, or Au is applied to the mounting portion of the semiconductor element of the heat dissipation member.
- a method of manufacturing a semiconductor package including a heat dissipation member, an insulating member, and a bonding layer, wherein the silver oxide having an average grain size of 1 nm to 100 ⁇ m at the junction between the heat dissipation member and the insulating member Providing a composite material including fine particles or organic coated silver fine particles, and heating the composite material at a temperature of 180 ° C. or higher and 550 ° C. or lower to form the composite material as a bonding layer for bonding the heat dissipation member and the insulating member.
- a method for manufacturing a semiconductor package is provided.
- a semiconductor package that is inexpensive and excellent in heat dissipation can be provided.
- FIG. 1 is a conceptual cross-sectional view of a semiconductor package of an embodiment of the present invention. It is a conceptual sectional view showing the example of mounting of the semiconductor element using the semiconductor package of the embodiment of the present invention.
- FIG. 1 is a conceptual cross-sectional view of the semiconductor package of this embodiment.
- the semiconductor package of this embodiment is formed by laminating the heat radiating member 2, the bonding layer 3, and the insulating member 1 in this order.
- the heat dissipating member 2 is preferably made of a flat aluminum-diamond composite containing diamond particles and a metal containing aluminum.
- the heat radiating member 2 may be composed of a composite portion of an aluminum-diamond composite and a surface layer provided on both surfaces of the composite portion.
- the content of diamond particles in the aluminum-diamond composite is preferably 40% by volume or more and 75% by volume or less of the entire composite composed of the composite part of the aluminum-diamond composite and the surface layer. If the diamond particle content is 40% by volume or more, sufficient thermal conductivity is obtained, and if the diamond particle content is 75% by volume or less, formation of a composite of diamond particles and aluminum is facilitated. .
- the surface layer covering both sides of the composite part of the aluminum-diamond composite is made of a material mainly containing a metal containing aluminum, such as an aluminum alloy, but contains a substance other than the metal containing aluminum. May be.
- the surface layer preferably contains 80% by mass or more of aluminum.
- the thickness of the heat dissipating member 2 of the present embodiment is preferably 100 ⁇ m or more and 5 mm or less. If the thickness of the heat dissipating member 2 is 100 ⁇ m or more, sufficient strength and rigidity can be obtained as the material of the semiconductor package. If the thickness of the heat dissipating member 2 is 5 mm or less, the cost of the member is reduced, and as a semiconductor package preferable. Although the thickness of the surface layer in the heat radiating member 2 is not particularly limited, it is preferable that each of the front and back layers is 20% or less of the thickness of the heat radiating member 2 because the heat radiating characteristics are improved.
- the joint between the heat radiation member 2 and the joining layer 3 may be plated. Moreover, since the heat radiating member 2 is used by being joined to the semiconductor element by soldering, the mounting portion of the semiconductor element of the heat radiating member 2 (joint portion between the heat radiating member and the semiconductor element) may be plated.
- Ni plating or two-layer plating of Ni plating and Au plating can be performed in consideration of solder wettability. It is also possible to use Ag plating instead of Au plating.
- the plating method is not particularly limited, and any of electroless plating and electroplating may be used.
- the plating thickness is preferably 0.5 ⁇ m or more and 10 ⁇ m or less. If the plating thickness is 0.5 ⁇ m or more, the generation of plating pinholes and solder voids (voids) during soldering can be prevented, and heat dissipation characteristics from the semiconductor element can be ensured. Moreover, if the plating thickness is 10 ⁇ m or less, the heat dissipation characteristics from the semiconductor element can be secured without being affected by the low thermal conductivity plating film.
- the purity of the plating film is not particularly limited as long as it does not hinder the solder wettability, and may contain other components such as phosphorus and boron.
- the bonding layer 3 of the present embodiment it is preferable to use a composite material containing silver oxide fine particles or organic coated silver fine particles, or a composite material containing silver oxide fine particles and organic coated silver fine particles.
- silver oxide fine particles examples include silver oxide (Ag 2 O, AgO), and at least one kind of metal selected from these groups can be used.
- the above-mentioned organic coated silver fine particles mean those in which the periphery of a silver core is covered with an organic protective film.
- the organic coating is not particularly limited as long as it is an organic substance containing C, H and / or O, and examples thereof include aliphatic carboxylic acids and amine compounds.
- the average particle size of the silver oxide fine particles or the organic coated silver fine particles is 1 nm to 100 ⁇ m, preferably 1 nm to 50 ⁇ m. When the average particle size is 100 ⁇ m or less, the gap between the particles can be reduced, and a dense bonding layer can be obtained. If the average particle size is 1 nm or more, the metal oxide particles themselves can be easily produced.
- the silver oxide fine particles and the organic coated silver fine particles can be packed more finely by mixing fine particles having a small particle size and those having a large particle size.
- any reducing agent may be used as long as it has an action of reducing metal oxide particles.
- the reducing agent for example, in addition to alcohols, carboxylic acids, amines, organic substances containing aldehyde groups, ester groups, sulfanyl groups, ketone groups, etc., or compounds containing organic substances such as carboxylic acid metal salts may be used. good.
- Silver oxide fine particles and organic coated silver fine particles can be dispersed in a solvent or the like as necessary, and used as a paste-like bonding material.
- a dispersant, a viscosity modifier, other metal components that promote firing, and the like can be appropriately added to the paste.
- the organic components in these pastes are preferably those having a weight loss of 95% or more at the firing temperature of the silver oxide fine particles and organic coated silver fine particles. If the weight loss of the organic component is 95% or more, the bonding layer can be sufficiently densified.
- the weight reduction here means a numerical value measured at a temperature rising rate of 10 ° C./min in the atmosphere by a commercially available TG-DTA measuring device.
- the thickness of the bonding layer 3 is not particularly limited, but is preferably 5 ⁇ m or more and 200 ⁇ m or less in consideration of the supply amount of the bonding material and the simplicity of the bonding process.
- the material of the insulating member 1 for example, alumina, aluminum nitride, silicon nitride, beryllium oxide, or the like can be used.
- the insulating member 1 may be plated.
- the plating method is not particularly limited, and any of electroless plating and electroplating may be used. As a specific example, Ni plating or two-layer plating of Ni plating and Au plating can be applied, or Ag plating can be used instead of Au plating.
- the plating thickness is preferably 0.5 ⁇ m or more and 10 ⁇ m or less. If the plating thickness is 0.5 ⁇ m or more, plating pinholes can be prevented and heat dissipation characteristics from the semiconductor element can be secured. Further, when the thickness of the plating exceeds 10 ⁇ m, the cost becomes high.
- the bonding temperature of the bonding layer 3 to the insulating member 1 and the heat radiating member 2 must be lower than the melting point of other members used in the semiconductor package and sufficiently high for the organic solvent to volatilize. In order to reduce the stress of the semiconductor package after bonding, it is desirable that the bonding temperature is low. Specifically, if the bonding temperature is 180 ° C. or higher and 550 ° C. or lower, bonding is possible without affecting the temperature of other members. On the other hand, in the process of mounting a semiconductor on the obtained semiconductor package, the bonding temperature is preferably 300 ° C. or higher in order to avoid melting of the bonding layer 3 during bonding of solder.
- One of the suitable forms for forming the bonding layer 3 of the present embodiment is to apply a paste-like bonding material between the members and form the bonding layer through heating and pressing.
- the form of the bonding material is not limited to the paste shape, and a sheet-shaped bonding material can also be used.
- the semiconductor package according to the above embodiment is inexpensive and excellent in heat dissipation, and can be preferably applied to a power semiconductor module or the like.
- FIG. 2 is a conceptual cross-sectional view showing a mounting example of a semiconductor element using the semiconductor package of the embodiment of the present invention.
- the semiconductor 8 is bonded to the heat dissipation member 2 via the solder bonding layer 7.
- the lid member 5 is bonded to the insulating member 1 through the lid member bonding layer 4.
- the material of the lid material bonding layer 4 can be an Au brazing material or the same material as that of the bonding layer 3.
- Example 1 The content of diamond particles having an average particle diameter of 130 ⁇ m as a heat radiating member is 60% by volume of the entire aluminum-diamond composite, the aluminum surface layer having an aluminum content of 99% or more is 50 ⁇ m on both sides, and the total thickness is A 1.5 mm aluminum diamond composite was processed into a size of 10 mm ⁇ 10 mm.
- As a bonding layer a mixed powder obtained by mixing silver fine particles having an average particle diameter of 8 nm and silver fine particles having an average particle diameter of 190 nm coated with an amine compound (octylamine) at a mass ratio of 1: 7 is dispersed in terpineol, and a solid content ratio is 70. A mass% paste was used.
- the paste is applied to the aluminum-diamond composite with a thickness of 10 ⁇ m, and 1 mm thick alumina is used as an insulating member, bonding is performed at 520 ° C. under vacuum, Ni plating is performed, and Au plating is further performed. To obtain a semiconductor package.
- Example 2 A semiconductor package was obtained in the same manner as in Example 1 except that both the heat dissipating member and the insulating member were plated with Ni before bonding and Au plated after bonding.
- Example 3 A semiconductor package was obtained in the same manner as in Example 1 except that both the heat dissipating member and the insulating member were plated with Ni before bonding and further plated with Au.
- the diamond particle content of the heat radiating member is 60% by volume of the entire aluminum-diamond composite, the aluminum surface layer is 50 ⁇ m on both sides, and the overall thickness is 1.5 mm, and the size is 10 mm ⁇ 10 mm. processed.
- a brazing material of Ag: 40 mass%, Cu: 30 mass%, and Zn: 30 mass% was used as the bonding layer.
- the brazing paste was applied to the aluminum-diamond composite to a thickness of 10 ⁇ m, and bonded at 550 ° C. under vacuum using alumina having a thickness of 1 mm as an insulating member.
- the semiconductor package bonded in this way has an advantage of excellent heat dissipation.
- a composite material containing silver oxide fine particles or organic coating silver fine particles, which is relatively inexpensive, is used for the bonding layer. From this, it is understood that the present invention provides a semiconductor package that is inexpensive and excellent in heat dissipation.
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Abstract
Description
アルミニウムをマトリックスとする金属‐セラミックス複合体を放熱部材として用いる場合には、アルミニウムの溶融温度が600℃付近であることから、放熱部材と絶縁部材の接合材としては金を含有するろう材を用いるのが一般的であったが、金は地金の値段も高く、コストがかかるといった課題があった。
放熱部材2中の表面層の厚みは特に制限はないが、放熱特性が良好となることから、表裏層それぞれが放熱部材2の厚みの20%以下であることが好ましい。
メッキの厚みは0.5μm以上10μm以下であることが好ましい。メッキ厚みが0.5μm以上であれば、メッキピンホールや半田付け時の半田ボイド(空隙)の発生を防ぐことができ、半導体素子からの放熱特性を確保することができる。また、メッキの厚みが10μm以下であれば、低熱伝導率のメッキ膜の影響を受けず、半導体素子からの放熱特性を確保することができる。
平均粒径が100μm以下であれば、粒子間の隙間を小さくすることができ、緻密な接合層を得ることができる。また、平均粒径が1nm以上であれば、金属酸化物粒子自体の作製が容易となる。
還元剤としては、例えば、アルコール類、カルボン酸類、アミン類の他、アルデヒド基やエステル基、スルファニル基、ケトン基などを含む有機物、あるいはカルボン酸金属塩などの有機物を含有する化合物を用いても良い。
これらペースト中の有機成分は酸化銀微粒子や有機被膜銀微粒子の焼成温度で95%以上の重量減少があるものを用いることが好ましい。有機成分の重量減少が95%以上であれば結合層の緻密化が十分に達成できる。尚、ここでいう重量減少とは市販のTG‐DTA測定装置により大気中で10℃/minの昇温速度で測定を行った数値を言う。
メッキの厚みは0.5μm以上10μm以下であることが好ましい。メッキ厚みが0.5μm以上であれば、メッキピンホールを防ぐことができ、半導体素子からの放熱特性を確保することができる。また、メッキの厚みが10μmを超えるとコストが高くなってしまう。
また、接合後の半導体パッケージの応力を低減するためには接合温度が低い方が望ましい。具体的には180℃以上550℃以下の接合温度であれば、他の部材への温度の影響を与えずに接合が可能である。一方、得られた半導体パッケージに半導体を実装する工程において、半田の接合時に接合層3が溶融することを避けるために、接合温度は300℃以上であることが好ましい。
放熱部材として平均粒子径130μmのダイヤモンド粒子の含有量が、アルミニウム-ダイヤモンド系複合体全体の60体積%であり、アルミニウム含有量が99%以上のアルミニウム表面層が表裏ともに50μmであり、全体厚みが1.5mmのアルミダイヤモンド複合体を10mm×10mmのサイズに加工した。
接合層としてアミン化合物(オクチルアミン)により被膜された平均粒子径8nmの銀微粒子と平均粒子径190nmの銀微粒子を質量比1:7の割合で混合した混合粉末をターピネオールに分散させ固形分比率70質量%のペーストを用いた。当該のペーストを前記アルミニウム-ダイヤモンド複合体に10μmの厚さで塗工し、絶縁部材として厚み1mmのアルミナを用いて真空下で520℃にて接合を行い、Niメッキを施し、更にAuメッキを施し半導体パッケージを得た。
放熱部材、絶縁部材ともに接合前にNiメッキを施し、接合後にAuメッキを施した以外は実施例1と同様にして半導体パッケージを得た。
放熱部材、絶縁部材ともに接合前にNiメッキを施し、更にAuメッキを施した以外は実施例1と同様にして半導体パッケージを得た。
放熱部材としてダイヤモンド粒子の含有量が、アルミニウム-ダイヤモンド系複合体全体の60体積%であり、アルミニウム表面層が表裏ともに50μm、全体厚みが1.5mmのアルミダイヤモンド複合体を10mm×10mmのサイズに加工した。
接合層としてAg:40質量%、Cu:30質量%、Zn:30質量%のろう材を用いた。該ろう材のペーストを前記アルミニウム-ダイヤモンド複合体に10μmの厚さで塗工し、絶縁部材として厚み1mmのアルミナを用いて真空下で550℃にて接合を行った。
2 放熱部材
3 接合層
4 ふた材接合層
5 ふた材
6 リード
7 半田接合層
8 半導体
Claims (7)
- 放熱部材、接合層、絶縁部材の順に積層されている半導体パッケージであって、
前記放熱部材がダイヤモンド粒子とアルミニウムを含有する金属とを含むアルミニウム-ダイヤモンド系複合体からなり、
前記放熱部材と前記絶縁部材とを接合する前記接合層が平均粒径が1nm以上100μm以下の酸化銀微粒子又は有機被膜銀微粒子を含む複合材を用いて形成されていることを特徴とする半導体パッケージ。 - アルミニウム-ダイヤモンド系複合体のダイヤモンド粒子の含有量が、前記アルミニウム-ダイヤモンド系複合体全体の40体積%以上75体積%以下であることを特徴とする請求項1に記載の半導体パッケージ。
- 前記絶縁部材がアルミナ、窒化ケイ素又は窒化アルミニウムであることを特徴とする請求項1又は2に記載の半導体パッケージ。
- 前記放熱部材と前記接合層との接合部に、Ni、Ag又はAuを含有する少なくとも1種のメッキ処理が施されていることを特徴とする請求項1から3のいずれか一項に記載の半導体パッケージ。
- 前記絶縁部材と前記接合層との接合部に、Ni、Ag又はAuを含有する少なくとも1種のメッキ処理が施されていることを特徴とする請求項1から4のいずれか一項に記載の半導体パッケージ。
- 前記放熱部材の半導体素子の実装部に、Ni、Ag又はAuを含有する少なくとも1種のメッキ処理が施されていることを特徴とする請求項1から5のいずれか一項に記載の半導体パッケージ。
- 放熱部材と絶縁部材と接合層とを含む半導体パッケージを製造する方法であって、
前記放熱部材と前記絶縁部材との接合部に平均粒径が1nm以上100μm以下の酸化銀微粒子又は有機被膜銀微粒子を含む複合材を設ける工程と、
180℃以上550℃以下の温度で加熱し、前記複合材を前記放熱部材と前記絶縁部材とを接合する接合層とする工程とを含むことを特徴とする半導体パッケージの製造方法。
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CN201580027795.8A CN106415822B (zh) | 2014-05-27 | 2015-05-26 | 半导体封装体及其制造方法 |
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