WO2015108043A1 - 樹脂組成物、リフレクター、リフレクター付きリードフレーム、及び半導体発光装置 - Google Patents
樹脂組成物、リフレクター、リフレクター付きリードフレーム、及び半導体発光装置 Download PDFInfo
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- WO2015108043A1 WO2015108043A1 PCT/JP2015/050700 JP2015050700W WO2015108043A1 WO 2015108043 A1 WO2015108043 A1 WO 2015108043A1 JP 2015050700 W JP2015050700 W JP 2015050700W WO 2015108043 A1 WO2015108043 A1 WO 2015108043A1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5425—Silicon-containing compounds containing oxygen containing at least one C=C bond
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
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- C—CHEMISTRY; METALLURGY
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0016—Plasticisers
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K7/00—Use of ingredients characterised by shape
- C08K7/02—Fibres or whiskers
- C08K7/04—Fibres or whiskers inorganic
- C08K7/14—Glass
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2237—Oxides; Hydroxides of metals of titanium
- C08K2003/2241—Titanium dioxide
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a resin composition, a reflector, a lead frame with a reflector, and a semiconductor light emitting device.
- an LED element which is one of semiconductor light emitting devices, is widely used as a light source such as an indicator lamp because of its small size, long life, and excellent power saving.
- LED elements with higher brightness have been manufactured at a relatively low cost, and therefore, use as a light source to replace fluorescent lamps and incandescent bulbs has been studied.
- LED elements are arranged on a surface mount type LED package, that is, a metal substrate (lead frame) such as aluminum or copper, and around each LED element.
- a reflector that reflects light in a predetermined direction is often used.
- the reflector deteriorates due to the temperature rise at the time of light emission of the LED element, and the reflectance thereof decreases. As a result, the luminance is lowered, and the life of the LED element is shortened. Therefore, heat resistance is required for the reflector.
- Patent Document 1 proposes a resin composition comprising a fluororesin (A) having a carbon-hydrogen bond and titanium oxide (B). Moreover, in patent document 2, the resin composition for reflectors containing a polymethyl pentene, a white pigment, spherical fused silica particle, and / or a modified cross-section glass fiber is proposed.
- the resin compositions described in Patent Document 1 and Patent Document 2 have not been examined for heat distortion resistance. Further, a resin composition containing fluorine as in Patent Document 1 generates a toxic gas such as hydrogen fluoride in the curing process by heat or radiation, and cannot be practically used from the viewpoint of environmental pollution.
- the present invention provides a resin composition that can exhibit excellent heat resistance (particularly, heat distortion resistance) even when formed into a molded body, a reflector using the resin composition, a lead frame with a reflector, and a semiconductor light emitting device. The purpose is to provide.
- the present invention is as follows.
- Olefin resin alkoxysilane compound having alkenyl group, titanium oxide, alumina, talc, clay, aluminum, aluminum hydroxide, mica, iron oxide, graphite, carbon black, calcium carbonate, zinc sulfide, zinc oxide,
- a resin composition comprising: at least one inorganic filler selected from the group consisting of barium sulfate and potassium titanate.
- a reflector comprising a cured product of the resin composition according to any one of [1] to [5].
- a lead frame with a reflector comprising a cured product of the resin composition according to any one of [1] to [5].
- An optical semiconductor element and a reflector that is provided around the optical semiconductor element and reflects light from the optical semiconductor element in a predetermined direction are provided on the substrate.
- a semiconductor light-emitting device comprising a cured product of the resin composition according to any one of [1] to [5], wherein a light reflecting surface of the reflector.
- a resin composition that can exhibit excellent heat resistance (particularly heat distortion resistance) even when formed into a molded body, a reflector using the resin composition, a lead frame with a reflector, and a semiconductor light emitting device are provided. Can be provided.
- the resin composition of the present invention includes an olefin resin, an alkoxysilane compound having an alkenyl group, titanium oxide, alumina, talc, clay, aluminum, aluminum hydroxide, mica, iron oxide, graphite, carbon black, calcium carbonate, sulfide. And at least one inorganic filler selected from the group consisting of zinc, zinc oxide, barium sulfate, and potassium titanate. According to the resin composition of the present invention, the dispersibility of the inorganic filler in the olefin resin is improved by the silane compound, and the light resistance is also excellent.
- the resin composition of this invention is an electron beam curable resin composition hardened
- the resin composition of the present invention will be described.
- the olefin resin is a polymer of a structural unit whose main chain is composed of a carbon-carbon bond, and the carbon bond may include a cyclic structure.
- a homopolymer may be sufficient and the copolymer formed by copolymerizing with another monomer may be sufficient. Since the carbon-carbon bond does not cause a hydrolysis reaction, it has excellent water resistance.
- the olefin resin examples include resins obtained by ring-opening metathesis polymerization of norbornene derivatives or hydrogenated products thereof, homopolymers of olefins such as ethylene and propylene, block copolymers of ethylene-propylene, random copolymers, Or a copolymer of ethylene and / or propylene and other olefins such as butene, pentene, hexene, and a copolymer of ethylene and / or propylene and other monomers such as vinyl acetate.
- polyethylene, polypropylene, and polymethylpentene are preferable, and polymethylpentene is more preferable.
- the polyethylene may be a homopolymer of ethylene, or ethylene and another comonomer copolymerizable with ethylene (for example, ⁇ -olefin such as propylene, 1-butene, 1-hexene, 1-octene, Copolymers with vinyl acetate, vinyl alcohol, etc.) may also be used.
- ⁇ -olefin such as propylene, 1-butene, 1-hexene, 1-octene, Copolymers with vinyl acetate, vinyl alcohol, etc.
- the polyethylene resin include high density polyethylene (HDPE), medium density polyethylene (MDPE), low density polyethylene (LDPE), linear low density polyethylene (LLDPE), very low density polyethylene (VLDPE), and ultra high molecular weight polyethylene ( UHMWPE), cross-linked polyethylene (PEX) and the like. These polyethylenes may be used alone or in combination of two or more.
- Polypropylene may be a homopolymer of propylene, or other comonomer copolymerizable with propylene (for example, ⁇ -olefin such as ethylene, 1-butene, 1-hexene, 1-octene, Copolymers with vinyl acetate, vinyl alcohol, etc.) may also be used. These polypropylenes may be used alone or in combination of two or more.
- ⁇ -olefin such as ethylene, 1-butene, 1-hexene, 1-octene, Copolymers with vinyl acetate, vinyl alcohol, etc.
- the polymethylpentene is preferably a homopolymer of 4-methylpentene-1, but 4-methylpentene-1 and other ⁇ -olefins such as ethylene, propylene, 1-butene, 1-pentene, 1-hexene, 1
- An ⁇ -olefin having 2 to 20 carbon atoms such as octene, 1-decene, 1-dodecene, 1-tetradecene, 1-octadecene, 1-eicocene, 3-methyl-1-butene, 3-methyl-1-pentene, etc.
- a copolymer mainly composed of 4-methylpentene-1 containing 90 mol% or more of 4-methyl-1-pentene may be used.
- the molecular weight of the homopolymer of 4-methylpentene-1 is preferably not less than 1,000, particularly preferably not less than 5,000, in terms of polystyrene as measured by gel permeation chromatography.
- the refractive index of an olefin resin is lower than that of a general resin, the difference in refractive index can be increased when combined with a high refractive index material such as titanium oxide particles, effectively improving the reflectance. It is possible.
- the refractive index is about 1.53 for polyethylene, about 1.48 for polypropylene, and about 1.46 for polymethylpentene, with polymethylpentene being more preferred.
- the presence of an aromatic ring in the resin structure makes it easier for colored components to occur due to absorption of ultraviolet light. Since generation of a colored component causes a decrease in light reflectance, it is preferable that the number of aromatic rings in the resin structure is small, and it is more preferable that aromatic rings are not substantially contained. Considering this point, for example, it is suitable for use as a reflector of a semiconductor light emitting device.
- the resin composition of the present invention contains an alkoxysilane compound having an alkenyl group.
- the number of carbon atoms in the organic chain is preferably 1 to 20, but is more preferably 1 to 10 because the hardness and density are lowered as the carbon number increases.
- the alkoxysilane compound having an alkenyl group is preferably a trialkoxysilane having an alkenyl group having 1 to 20 carbon atoms, more preferably a trialkoxysilane having an alkenyl group having 1 to 10 carbon atoms. .
- alkoxysilane compound examples include vinyltrimethoxysilane, vinyltriethoxysilane, propenyltrimethoxysilane, propenyltriethoxysilane, butenyltrimethoxysilane, butenyltriethoxysilane, pentenyltrimethoxysilane, pentenyltriethoxysilane, hexenyl.
- Trimethoxysilane hexenyltriethoxysilane, heptenyltrimethoxysilane, heptenyltriethoxysilane, octenyltrimethoxysilane, octenyltriethoxysilane, nonenyltrimethoxysilane, nonenyltriethoxysilane, decenyltrimethoxysilane , Decenyltriethoxysilane, undecenyltrimethoxysilane, undecenyltriethoxysilane, dodecenyltrimethoxysilane, dodecenyltrie Kishishiran, and the like. Of these, vinyltrimethoxysilane and octenyltrimethoxysilane are preferable.
- the content of the alkoxysilane compound having an alkenyl group is preferably 0.1 to 20 parts by mass, more preferably 0.5 to 10 parts by mass with respect to 100 parts by mass of the olefin resin. More preferably, it is part by mass.
- the filler can be dispersed in the resin. That is, the dispersibility of the inorganic filler in the olefin resin is improved by the silane compound, and excellent reflectance and light resistance can be exhibited.
- the number of aromatic rings is small, and it is more preferable that there are no aromatic rings.
- titanium oxide, alumina, talc, clay, aluminum, aluminum hydroxide, mica, iron oxide, graphite, carbon black, calcium carbonate, zinc sulfide, zinc oxide, barium sulfate, potassium titanate At least one inorganic filler selected from the group consisting of: Especially, it is preferable that a white pigment is included. By including a white pigment, it can be used for applications such as a reflector. As the white pigment, titanium oxide, zinc sulfide, zinc oxide, barium sulfate, potassium titanate and the like can be used alone or in combination, and titanium oxide is particularly preferable. Further, the shape of the inorganic filler is not particularly limited. For example, particles and fibers, irregular cross-section fibers, shapes with a large unevenness, and thin flakes can be used.
- the content of the inorganic filler is preferably 10 to 600 parts by mass, more preferably 30 to 500 parts by mass, and still more preferably 50 to 450 parts by mass with respect to 100 parts by mass of the olefin resin.
- the product performance for example, the light reflectivity, strength, and warping of the reflector
- it can prevent that a molded state is bad and product performance (for example, the light reflectivity of a reflector) falls.
- the average particle size of the inorganic filler is preferably 0.01 to 100 ⁇ m, more preferably 0.05 to 10 ⁇ m, and further preferably 0.10 to 1 ⁇ m in the primary particle size distribution in consideration of moldability. preferable.
- An average particle diameter can be calculated
- inorganic fillers other than the inorganic filler according to the present invention may be included.
- inorganic fillers those that are usually blended in a thermoplastic resin composition and a thermosetting resin composition such as an epoxy resin, an acrylic resin, or a silicone resin can be used alone or in combination.
- the shape and particle size of other inorganic fillers are not particularly limited. For example, particles and fibers, irregular cross-section fibers, shapes with a large unevenness, and thin flakes can be used.
- silica is used, and silica is preferably silica particles, glass fibers, and the like, and more preferably contains glass fibers.
- the average particle diameter of the silica particles is preferably 0.01 to 1000 ⁇ m, more preferably 0.1 to 200 ⁇ m, and further preferably 1 to 100 ⁇ m.
- the glass fiber has an average length (fiber length) of preferably 5 to 3000 ⁇ m, more preferably 20 to 200 ⁇ m, and even more preferably 40 to 100 ⁇ m. By setting the average particle diameter or fiber length within this range, the fibrous material is filled in a large amount, and the strength of the molded product can be increased.
- the mixture is incinerated in an electric furnace at a temperature of 600 ° C. for 2 hours, dispersed in the solution, the dispersed solution is dried on a slide glass, photographed with a microscope, and processed with image analysis software. Can be obtained.
- the content of the other inorganic filler is preferably 10 to 300 parts by mass, more preferably 30 to 200 parts by mass, and further preferably 50 to 120 parts by mass with respect to 100 parts by mass of the olefin resin. preferable.
- the resin composition of the present invention preferably contains a fluidity improver.
- a fluidity improver include triallyl isocyanurate, monoglycidyl diallyl isocyanurate, diglycidyl monoallyl isocyanurate, trimethallyl isocyanurate, monoglycidyl dimethallyl isocyanurate, diglycidyl monomethallyl isocyanurate, triary.
- liquidity of a resin composition can be evaluated by a melt volume rate (MVR).
- MVR is measured by a method based on the method described in JIS K 7210: 1999 MVR of thermoplastics. Specifically, the test is performed at a test temperature of 240 ° C. and a test load of 2.16 kg for 60 seconds.
- a soot melt flow tester manufactured by Thiast Co. can be used.
- additives can be added as long as the effects of the present invention are not impaired.
- various kinds of whisker, silicone powder, thermoplastic elastomer, organic synthetic rubber, fatty acid ester, glycerate ester, zinc stearate, calcium stearate, etc. internal release agents; benzophenone series , Salicylic acid-based, cyanoacrylate-based, isocyanurate-based, oxalic acid anilide-based, benzoate-based, hindered amine-based, benzotriazole-based, phenol-based antioxidants; hindered amine-based, benzoate-based light stabilizers, etc.
- an additive such as a crosslinking agent can be blended.
- the resin composition of the present invention has an inorganic filler, an alkoxy group that exhibits dehydration condensation reaction with the inorganic filler after hydrolysis, and a double bond having reactivity with the resin, it does not contain a crosslinking agent. However, it can exhibit excellent heat resistance.
- the resin composition of the present invention can be prepared by mixing the olefin resin described above, an alkoxysilane compound having an alkenyl group, an inorganic filler, and other inorganic fillers, if necessary, at a predetermined ratio.
- known means such as a two-roll or three-roll, a stirrer such as a homogenizer or a planetary mixer, or a melt kneader such as a polylab system or a lab plast mill can be applied. These may be performed at normal temperature, cooling state, heating state, normal pressure, reduced pressure state, or pressurized state.
- the resin composition of the present invention By using the resin composition of the present invention, various molded products can be molded, and a molded product (for example, a reflector) having a thinner thickness can be produced.
- the resin composition of this invention is preferably produced by an injection molding process in which injection molding is performed at a cylinder temperature of 200 to 400 ° C. and a mold temperature of 20 to 150 ° C. Further, any method may be used, but it is preferable to carry out the curing step after the injection molding step. For example, the electron beam irradiation process etc. which perform an electron beam irradiation process are mentioned.
- the acceleration voltage of an electron beam it can select suitably according to the resin to be used and the thickness of a layer.
- the resin to be used it is usually preferable to cure the uncured resin layer at an acceleration voltage of about 250 to 3000 kV.
- the transmission capability increases as the acceleration voltage increases. Therefore, when using a base material that deteriorates due to the electron beam as the base material, the transmission depth of the electron beam and the thickness of the resin layer are substantially equal.
- the accelerating voltage so as to be equal to each other, it is possible to suppress the irradiation of the electron beam to the base material, and to minimize the deterioration of the base material due to the excessive electron beam.
- the absorbed dose when irradiating with an electron beam is appropriately set depending on the composition of the resin composition, but is preferably an amount at which the crosslinking density of the resin layer is saturated, and the irradiated dose is preferably 50 to 600 kGy.
- the electron beam source is not particularly limited.
- various electron beam accelerators such as a cockroft Walton type, a bandegraft type, a resonant transformer type, an insulated core transformer type, a linear type, a dynamitron type, and a high frequency type. Can be used.
- the resin composition of the present invention as described above can be applied to various uses as a composite material applied on a substrate and cured, or a cured product of the resin composition.
- it can be applied as a heat-resistant insulating film, a heat-resistant release sheet, a heat-resistant transparent substrate, a light-reflecting sheet for solar cells, or a reflector for a light source for televisions, such as LEDs.
- the reflector of the present invention comprises a cured product obtained by curing the above-described resin composition of the present invention.
- the reflector may be used in combination with a semiconductor light emitting device described later, or may be used in combination with a semiconductor light emitting device made of another material.
- the reflector of the present invention mainly has an action of reflecting light from the LED element of the semiconductor light emitting device toward the lens (light emitting portion).
- the details of the reflector are the same as those of the reflector (reflector 12 described later) applied to the semiconductor light emitting device of the present invention, and are omitted here.
- the lead frame in the present invention indicates a substrate on which a reflector is placed. Any lead frame can be used as long as it is used in the field of semiconductor light emitting devices. Examples of the material of the lead frame include ceramics made of a sintered body such as alumina, aluminum nitride, mullite, and glass. In addition, a resin material having flexibility such as polyimide resin can be used. In particular, as the lead frame made of metal, aluminum, copper, and an alloy of copper are often used, and in order to improve the reflectance, the lead frame is often plated with a noble metal having a high reflectance such as silver. In particular, a reflector substrate made of metal is often called a lead frame.
- the lead frame with a reflector of the present invention comprises a cured product obtained by molding the above-described resin composition of the present invention. Specifically, the lead frame with a reflector of the present invention is manufactured by molding the resin composition of the present invention into a desired reflector shape by injection molding on the lead frame.
- the thickness of the lead frame with a reflector is preferably 0.1 to 3.0 mm, more preferably 0.1 to 1.0 mm, and further preferably 0.1 to 0.8 mm.
- a resin frame having a smaller thickness can be produced as compared with a resin frame produced using glass fibers.
- a resin frame having a thickness of 0.1 to 3.0 mm can be produced.
- the lead frame with a reflector according to the present invention formed in this way has no warp caused by containing a filler such as glass fiber even when the thickness is reduced, so that the form stability and handleability are improved. Also excellent.
- the lead frame with a reflector of the present invention can be made into a semiconductor light emitting device by mounting an LED chip on the reflector, further sealing with a known sealing agent, and die bonding to obtain a desired shape.
- the lead frame with a reflector of this invention acts as a reflector, it is functioning also as a frame which supports a semiconductor light-emitting device.
- the semiconductor light emitting device of the present invention is provided around an optical semiconductor element (for example, an LED element) 10 and the optical semiconductor element 10, and reflects light from the optical semiconductor element 10 in a predetermined direction.
- a reflector 12 is provided on the substrate 14. And at least one part (all in the case of FIG. 1) of the light reflection surface of the reflector 12 is comprised with the hardened
- the optical semiconductor element 10 emits radiated light (generally UV or blue light in a white light LED), for example, an active layer made of AlGaAs, AlGaInP, GaP or GaN sandwiched between n-type and p-type cladding layers. It is a semiconductor chip (light emitter) having a double heterostructure, and has a hexahedral shape with a side length of about 0.5 mm, for example. In the case of wire bonding mounting, it is connected to an electrode (connection terminal) (not shown) via a lead wire 16. Note that electrical insulation is maintained between the optical semiconductor element 10 and the electrode to which the lead wire 16 is connected by an insulating portion 15 formed of resin or the like.
- the shape of the reflector 12 conforms to the shape of the end portion (joint portion) of the lens 18 and is usually a cylindrical shape such as a square shape, a circular shape, or an oval shape, or an annular shape.
- the reflector 12 is a cylindrical body (annular body), and all the end faces of the reflector 12 are in contact with and fixed to the surface of the substrate 14.
- the inner surface of the reflector 12 may be expanded upward in a tapered shape (see FIG. 1).
- the reflector 12 can also function as a lens holder when the end portion on the lens 18 side is processed into a shape corresponding to the shape of the lens 18.
- the reflector 12 may have only the light reflecting surface side as a light reflecting layer 12a made of the resin composition of the present invention.
- the thickness of the light reflection layer 12a is preferably 500 ⁇ m or less, and more preferably 300 ⁇ m or less, from the viewpoint of reducing the thermal resistance.
- the member 12b on which the light reflecting layer 12a is formed can be made of a known heat resistant resin.
- the lens 18 is provided on the reflector 12, but this is usually made of resin, and various structures may be adopted and colored depending on the purpose and application.
- the space formed by the substrate 14, the reflector 12, and the lens 18 may be a transparent sealing portion, or may be a gap if necessary.
- This space portion is usually a transparent sealing portion filled with a light-transmitting and insulating material, and the force applied by directly contacting the lead wire 16 in wire bonding mounting and indirectly. Prevents electrical defects caused by the lead wire 16 being disconnected, cut, or short-circuited from the connection portion with the optical semiconductor element 10 and / or the connection portion with the electrode due to applied vibration, impact, etc. can do.
- the optical semiconductor element 10 can be protected from moisture, dust, etc., and the reliability can be maintained over a long period of time.
- Examples of the material (transparent sealant composition) that imparts translucency and insulation usually include silicone resins, epoxy silicone resins, epoxy resins, acrylic resins, polyimide resins, polycarbonate resins, and the like. Of these, silicone resins are preferred from the viewpoints of heat resistance, weather resistance, low shrinkage, and discoloration resistance.
- the reflector 12 having a predetermined shape is molded from the resin composition of the present invention by transfer molding, compression molding, injection molding or the like using a mold having a cavity space having a predetermined shape.
- the separately prepared optical semiconductor element 10, electrodes, and lead wires 16 are fixed to the substrate 14 with an adhesive or a bonding member.
- a transparent sealant composition containing a silicone resin or the like is poured into the recess formed by the substrate 14 and the reflector 12, and cured by heating, drying, or the like to obtain a transparent sealing portion.
- the lens 18 is disposed on the transparent sealing portion to obtain the semiconductor light emitting device shown in FIG.
- the composition may be cured.
- Titanium oxide PF-691 (Ishihara Sangyo Co., Ltd. Rutile structure average particle size 0.21 ⁇ m)
- additives are as follows. ⁇ TAIC (triallyl isocyanurate) Nippon Kasei Co., Ltd. ⁇ IRGANOX 1010 (BASF ⁇ Japan Co., Ltd.) ⁇ PEP 36 (manufactured by ADEKA Corporation) ⁇ SZ-2000 (manufactured by Sakai Chemical Industry Co., Ltd.)
- Examples 1 to 8, 10 to 15, Comparative Examples 1 to 6 Various materials were blended and kneaded as shown in Tables 1 to 3 below to obtain resin compositions.
- the resin composition for evaluation 2 and evaluation 3 mix
- These resin compositions were press-molded into a size of 750 mm ⁇ 750 mm ⁇ thickness 0.5 mm under the conditions of 250 ° C., 30 seconds, and 20 MPa to produce a molded body (1).
- the compact (1) was irradiated with an electron beam at an acceleration voltage of 800 kV and an absorbed dose of 400 kGy. The following characteristics (evaluations 2 and 3) were evaluated. The results are shown in Tables 1 to 3 below.
- the resin composition according to the present invention was able to exhibit excellent heat deformation even when formed into a molded body. From the above, it can be said that the resin composition of the present invention is useful for reflectors and reflectors for semiconductor light emitting devices.
Abstract
Description
しかしながら、従来使用されてきた電子部品は耐熱性が十分とは言えず、特に赤外線加熱によるリフロー工程においては、部品表面の温度が局部的に高くなり変形が生じる等の問題があり、より耐熱性(特に、耐熱変形性)に優れた樹脂組成物及び電子部品が望まれていた。
以上から、本発明は、成形体とした場合においても優れた耐熱性(特に耐熱変形性)を発揮し得る樹脂組成物、当該樹脂組成物を用いたリフレクター、リフレクター付きリードフレーム、及び半導体発光装置を提供することを目的とする。
[3] 前記アルケニル基を有するアルコキシシラン化合物が、炭素数が1~20のアルケニル基を有するトリアルコキシシランである[1]又は[2]に記載の樹脂組成物。
[4] さらにシリカを含む[1]~[3]のいずれかに記載の樹脂組成物。
[5] さらに流動性向上剤を含む[1]~[4]のいずれかに記載の樹脂組成物。
[7] [1]~[5]のいずれかに記載の樹脂組成物の硬化物からなるリフレクター付きリードフレーム。
[8] 光半導体素子と、前記光半導体素子の周りに設けられ、該光半導体素子からの光を所定方向に反射させるリフレクターとを基板上に有し、
前記リフレクターの光反射面が[1]~[5]のいずれかに記載の樹脂組成物の硬化物からなる半導体発光装置。
本発明の樹脂組成物は、オレフィン樹脂と、アルケニル基を有するアルコキシシラン化合物と、酸化チタン、アルミナ、タルク、クレー、アルミニウム、水酸化アルミニウム、マイカ、酸化鉄、グラファイト、カーボンブラック、炭酸カルシウム、硫化亜鉛、酸化亜鉛、硫酸バリウム、チタン酸カリウムからなる群から選択される少なくとも1つの無機フィラーと、を含む。本発明の樹脂組成物によれば、上記シラン化合物によりオレフィン樹脂中への無機フィラーの分散性が向上し、また耐光性にも優れる。
以下、本発明の樹脂組成物について説明する。
オレフィン樹脂とは、主鎖が炭素-炭素結合からなる構成単位の重合体であり、炭素結合には環状の構造を含む場合もある。単独重合体でもよく、他のモノマーと共重合してなる共重合体でもよい。炭素-炭素結合は加水分解反応を起こさないので、耐水性に優れる。オレフィン樹脂としては、例えば、ノルボルネン誘導体を開環メタセシス重合させた樹脂あるいはその水素添加物、エチレン、プロピレン等のオレフィンのそれぞれ単独重合体、あるいはエチレン-プロピレンのブロック共重合体、ランダム共重合体、あるいはエチレン及び/又はプロピレンと、ブテン、ペンテン、ヘキセン等の他のオレフィンとの共重合体、更には、エチレン及び/又はプロピレンと、酢酸ビニル等の他の単量体との共重合体等が挙げられる。なかでも、ポリエチレン、ポリプロピレン、ポリメチルペンテンが好ましく、ポリメチルペンテンがより好ましい。
ポリプロピレンとは、プロピレンの単独重合体であってもよいし、プロピレンと、プロピレンと共重合可能な他のコモノマー(例えば、エチレン、1-ブテン、1-ヘキセン、1-オクテン等のα-オレフィン、酢酸ビニル、ビニルアルコール等)との共重合体であってもよい。これらのポリプロピレンは1種単独で使用してもよいし、2種以上を併用してもよい。
ポリメチルペンテンとしては4-メチルペンテン-1の単独重合体が好ましいが、4-メチルペンテン-1と他のα-オレフィン、例えばエチレン、プロピレン、1-ブテン、1-ペンテン、1-ヘキセン、1-オクテン、1-デセン、1-ドデセン、1-テトラデセン、1-オクタデセン、1-エイコセン、3-メチル-1-ブテン、3-メチル-1-ペンテン等の炭素数2ないし20のα-オレフィンとの共重合体で、4-メチル-1-ペンテンを90モル%以上含む4-メチルペンテン-1を主体とした共重合体でもよい。
4-メチルペンテン-1の単独重合体の分子量はゲルパーミッションクロマトグラフィーで測定したポリスチレン換算の重量平均分子量Mwが1,000以上、特に5,000以上が好ましい。
また、樹脂構造に芳香環が存在することで、紫外光の吸収による着色成分の生成が起こりやすくなる。着色成分が生成すると光の反射率の低下を引き起こすため、樹脂構造中の芳香環の数は少ない方が好ましく、芳香環は実質的に含まないことがより好ましい。かかる点を考慮すると、例えば、半導体発光装置のリフレクターとして使用するには好適である。
本発明の樹脂組成物においては、アルケニル基を有するアルコキシシラン化合物が含有されてなる。有機鎖の炭素数は1~20とすることが好ましいが、炭素数の増加により硬さや密度が低下するため、1~10であることがより好ましい。
アルケニル基を有するアルコキシシラン化合物としては、炭素数が1~20のアルケニル基を有するトリアルコキシシランであることが好ましく、炭素数が1~10のアルケニル基を有するトリアルコキシシランであることがさらに好ましい。当該アルコキシシラン化合物としては、ビニルトリメトキシシラン、ビニルトリエトキシシラン、プロペニルトリメトキシシラン、プロペニルトリエトキシシラン、ブテニルトリメトキシシラン、ブテニルトリエトキシシラン、ペンテニルトリメトキシシラン、ペンテニルトリエトキシシラン、ヘキセニルトリメトキシシラン、ヘキセニルトリエトキシシラン、ヘプテニルトリメトキシシラン、ヘプテニルトリエトキシシラン、オクテニルトリメトキシシラン、オクテニルトリエトキシシラン、ノネニルトリメトキシシラン、ノネニルトリエトキシシラン、デケニルトリメトキシシラン、デケニルトリエトキシシラン、ウンデケニルトリメトキシシラン、ウンデケニルトリエトキシシラン、ドデケニルトリメトキシシラン、ドデケニルトリエトキシシラン、等が挙げられる。なかでも、ビニルトリメトキシシラン、オクテニルトリメトキシシランが好ましい。
また本発明の樹脂組成物においては、酸化チタン、アルミナ、タルク、クレー、アルミニウム、水酸化アルミニウム、マイカ、酸化鉄、グラファイト、カーボンブラック、炭酸カルシウム、硫化亜鉛、酸化亜鉛、硫酸バリウム、チタン酸カリウムからなる群から選択される少なくとも1つの無機フィラーを含む。なかでも、白色顔料を含むことが好ましい。白色顔料を含むことで、リフレクター等の用途に供することができる。白色顔料としては、酸化チタン、硫化亜鉛、酸化亜鉛、硫酸バリウム、チタン酸カリウム等を単独もしくは混合して使用することが可能で、なかでも酸化チタンが好ましい。
また、無機フィラーの形状は特に限定されるものではない。例えば、粒子状及び繊維状、異形断面繊維状、凹凸差の大きな形状、厚みの薄い薄片状といった形状のものが使用できる。
性能を損なわない限りは、本発明に係る無機フィラー以外のその他の無機フィラーが含まれていても良い。その他の無機フィラーとしては、通常、熱可塑樹脂組成物及びエポキシ樹脂、アクリル樹脂、シリコーン樹脂のような熱硬化樹脂組成物に配合されるものを単独もしくは混合して、使用することができる。その他の無機フィラーの形状及び粒径は特に限定されるものではない。例えば、粒子状及び繊維状、異形断面繊維状、凹凸差の大きな形状、厚みの薄い薄片状といった形状のものが使用できる。具体的には、シリカが用いられ、シリカとしてはシリカ粒子、ガラス繊維等が好ましく、ガラス繊維を含むことがより好ましい。当該シリカ粒子の平均粒径は0.01~1000μmであることが好ましく、0.1~200μmであることがより好ましく、1~100μmであることがさらに好ましい。またガラス繊維は平均長さ(繊維長)が5~3000μmであることが好ましく、20~200μmであることがより好ましく、40~100μmであることがさらに好ましい。この範囲内の平均粒径または繊維長さにすることにより、繊維状材料が成形物中に多く充填され、成形物の強度を高めることができる。
なお、繊維長は、混合物を温度600℃の電気炉で2時間灰化し、溶液中に分散させ、その分散溶液をスライドグラス上で乾燥させ、顕微鏡で写真撮影を行い、画像解析ソフトで処理することで求めることができる。
ここで、本発明の樹脂組成物は、無機フィラーと、加水分解後に無機フィラーと脱水縮合反応を示すアルコキシ基と、樹脂と反応性を有する二重結合を有するため、架橋処理剤を含有しなくても優れた耐熱性を発揮できる。
混合方法としては、2本ロールあるいは3本ロール、ホモジナイザー、プラネタリーミキサー等の撹拌機、ポリラボシステムやラボプラストミル等の溶融混練機等の公知の手段を適用することができる。これらは常温、冷却状態、加熱状態、常圧、減圧状態、加圧状態のいずれで行ってもよい。
すなわち、本発明の樹脂組成物に対し、シリンダー温度200~400℃、金型温度20~150℃で射出成形する射出成形工程より作製することが好ましい。さらにどのような方法でも構わないが、硬化工程を射出成形工程の後に実施することが好ましい。例えば、電子線照射処理を施す電子線照射工程などが挙げられる。
さらに、電子線源としては、特に制限はなく、例えばコックロフトワルトン型、バンデグラフト型、共振変圧器型、絶縁コア変圧器型、あるいは直線型、ダイナミトロン型、高周波型などの各種電子線加速器を用いることができる。
本発明のリフレクターは、既述の本発明の樹脂組成物を硬化した硬化物からなる。
当該リフレクターは、後述する半導体発光装置と組み合わせて用いてよいし、他の材料からなる半導体発光装置と組み合わせて用いてもよい。
本発明のリフレクターは、主として、半導体発光装置のLED素子からの光をレンズ(出光部)の方へ反射させる作用を有する。リフレクターの詳細については、本発明の半導体発光装置に適用されるリフレクター(後述するリフレクター12)と同じであるためここでは省略する。
本発明におけるリードフレームは、リフレクターを載置するための基板を示す。リードフレームは、半導体発光装置の分野で用いられるものあればいかなるものであっても使用可能である。リードフレームの材料としては、たとえば、アルミナや、窒化アルミニウム、ムライト、ガラスなどの焼結体から構成されるセラミック等を挙げることができる。これ以外にも、ポリイミド樹脂等のフレキシブル性を有する樹脂材料等を挙げることができる。特に金属よりなるリードフレームとしては、アルミニウム、銅及び銅の合金が用いられることが多く、反射率の向上のため銀などの反射率が高い貴金属によりめっきされることも多い。特に金属で形成されたリフレクター用基板は、リードフレームと呼称されることも多い。
本発明のリフレクター付きリードフレームは既述の本発明の樹脂組成物を成形した硬化物からなる。具体的には、リードフレームに、本発明の樹脂組成物を射出成形により所望のリフレクター形状に成形することで、本発明のリフレクター付きリードフレームが製造される。
本発明の樹脂組成物においては、例えばガラス繊維を用いて作製した樹脂フレームに比べてより厚みの小さい樹脂フレームを作製することができる。具体的には0.1~3.0mmの厚みの樹脂フレームを作製することができる。また、このようにして成形してなる本発明のリフレクター付きリードフレームは、厚みを小さくしても、ガラス繊維等のフィラーを含むことに起因する反りの発生がないため、形態安定性や取り扱い性にも優れる。
本発明の半導体発光装置は、図1に例示するように、光半導体素子(例えばLED素子)10と、この光半導体素子10の周りに設けられ、光半導体素子10からの光を所定方向に反射させるリフレクター12とを基板14上に有してなる。そして、リフレクター12の光反射面の少なくとも一部(図1の場合は全部)が既述の本発明のリフレクター組成物の硬化物で構成されてなる。
なお、光半導体素子10とリード線16が接続された上記電極とは、樹脂等で形成された絶縁部15により電気的絶縁が保たれている。
なお、リフレクター12の内面は、光半導体素子10からの光の指向性を高めるために、テーパー状に上方に広げられていてもよい(図1参照)。
また、リフレクター12は、レンズ18側の端部を、当該レンズ18の形状に応じた形に加工された場合には、レンズホルダーとしても機能させることができる。
まず、上記本発明の樹脂組成物を、所定形状のキャビティ空間を備える金型を用いたトランスファー成形、圧縮成形、射出成形等により、所定形状のリフレクター12を成形する。その後、別途、準備した光半導体素子10、電極及びリード線16を、接着剤又は接合部材により基板14に固定する。次いで、基板14及びリフレクター12により形成された凹部に、シリコーン樹脂等を含む透明封止剤組成物を注入し、加熱、乾燥等により硬化させて透明封止部とする。その後、透明封止部上にレンズ18を配設して、図1に示す半導体発光装置が得られる。
なお、透明封止剤組成物が未硬化の状態でレンズ18を載置してから、組成物を硬化させてもよい。
なお、本実施例1~8、10~15及び比較例1~6において使用した材料は下記の通りである。
・ポリメチルペンテン :TPX RT18(三井化学(株)製)
・ポリエチレン:ハイゼックス1300((株)プライムポリマー製)
・ポリプロピレン:プライムポリプロ137G((株)プライムポリマー製)
・7-オクテニルトリメトキシシラン
・ビニルトリメトキシシラン
・3-メタクリロキシプロピルトリメトキシシラン
・3-アクリロキシプロピルトリメトキシシラン
・ヘキシルトリメトキシシラン
・酸化チタン PF-691(石原産業(株)製 ルチル型構造 平均粒径0.21μm)
・ガラス繊維 PF70E-001(日東紡(株)製、繊維長70μm)
添加剤については下記の通りである。
・TAIC(トリアリルイソシアヌレート) 日本化成(株)製
・IRGANOX 1010 (BASF・ジャパン(株)製)
・PEP 36 ((株)ADEKA製)
・SZ-2000 (堺化学工業(株)製)
下記表1~表3に示すように各種材料を配合、混練し、樹脂組成物を得た。
なお、評価2及び評価3用の樹脂組成物は、各種材料を配合し、押出機(日本プラコン(株) MAX30:ダイス径3.0mm)とペレタイザー((株)東洋精機製作所 MPETC1)を用いて行い作製した。
これらの樹脂組成物につき、250℃、30秒、20MPaの条件で、750mm×750mm×厚さ0.5mmにプレス成形し、成形体(1)を作製した。
成形体(1)に、加速電圧を800kVで400kGyの吸収線量にて電子線を照射した。これらの下記諸特性(評価2,3)を評価した。結果を下記表1~表3に示す。
・ペレット化
評価1用に下記のようにして樹脂組成物のペレット化を行った。まず、各種材料を計量し、ポリラボシステム(バッチ式2軸)により混練し、樹脂組成物を得た。その後、切断することでペレットを作製した。ペレット化の可否の結果を下記表1~表3に示す。
なお、表中のAはペレット化が可能であること、Bはペレットとならないことを示す。
・耐熱性
成形体(1)の各試料の貯蔵弾性率を、RSAG2(TA INSTRUMENTS製)により、測定温度25~400℃、昇温速度5℃/min、Strain 0.1%の条件にて測定した。270℃での貯蔵弾性率を下記表1~表3に示す。
・耐熱性
成形体(1)の各試料を、150℃で24時間の処理後での外観変化(変色性)を目視で確認した。結果を下記表1~表3に示す。
なお、表中のAは上記処理前後で外観変化、すなわち変色がないこと、Bはわずかに変色が見られたこと、Cは処理後に外観変化(変色)が見られたことを示す。
12・・・リフレクター
14・・・基板
15・・・絶縁部
16・・・リード線
18・・・レンズ
Claims (8)
- オレフィン樹脂と、アルケニル基を有するアルコキシシラン化合物と、酸化チタン、アルミナ、タルク、クレー、アルミニウム、水酸化アルミニウム、マイカ、酸化鉄、グラファイト、カーボンブラック、炭酸カルシウム、硫化亜鉛、酸化亜鉛、硫酸バリウム、チタン酸カリウムからなる群から選択される少なくとも1つの無機フィラーと、を含む樹脂組成物。
- 前記オレフィン樹脂が、ポリエチレン、ポリプロピレン及びポリメチルペンテンの少なくともいずれかである請求項1に記載の樹脂組成物。
- 前記アルケニル基を有するアルコキシシラン化合物が、炭素数が1~20のアルケニル基を有するトリアルコキシシランである請求項1又は2に記載の樹脂組成物。
- さらにシリカを含む請求項1~3のいずれか1項に記載の樹脂組成物。
- さらに流動性向上剤を含む請求項1~4のいずれか1項に記載の樹脂組成物。
- 請求項1~5のいずれか1項に記載の樹脂組成物の硬化物からなるリフレクター。
- 請求項1~5のいずれか1項に記載の樹脂組成物の硬化物からなるリフレクター付きリードフレーム。
- 光半導体素子と、前記光半導体素子の周りに設けられ、該光半導体素子からの光を所定方向に反射させるリフレクターとを基板上に有し、
前記リフレクターの光反射面が請求項1~5のいずれか1項に記載の樹脂組成物の硬化物からなる半導体発光装置。
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US10763404B2 (en) | 2015-10-05 | 2020-09-01 | Maven Optronics Co., Ltd. | Light emitting device with beveled reflector and manufacturing method of the same |
TWI677114B (zh) * | 2015-10-05 | 2019-11-11 | 行家光電股份有限公司 | 具導角反射結構的發光裝置 |
JP6443429B2 (ja) * | 2016-11-30 | 2018-12-26 | 日亜化学工業株式会社 | パッケージ及びパッケージの製造方法、発光装置及び発光装置の製造方法 |
JP2020055910A (ja) * | 2018-09-28 | 2020-04-09 | 日亜化学工業株式会社 | 樹脂組成物、及び発光装置 |
TWI692816B (zh) * | 2019-05-22 | 2020-05-01 | 友達光電股份有限公司 | 顯示裝置及其製作方法 |
CN115716959B (zh) * | 2022-11-23 | 2024-03-29 | 金旸(厦门)新材料科技有限公司 | 一种低气味聚丙烯-聚酰胺合金材料及其制备方法 |
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TWI644957B (zh) | 2018-12-21 |
US20160372645A1 (en) | 2016-12-22 |
CN105916931A (zh) | 2016-08-31 |
JP2015131910A (ja) | 2015-07-23 |
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