WO2015101259A1 - 静电卡盘、腔室和静电卡盘的制作方法 - Google Patents

静电卡盘、腔室和静电卡盘的制作方法 Download PDF

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Publication number
WO2015101259A1
WO2015101259A1 PCT/CN2014/095353 CN2014095353W WO2015101259A1 WO 2015101259 A1 WO2015101259 A1 WO 2015101259A1 CN 2014095353 W CN2014095353 W CN 2014095353W WO 2015101259 A1 WO2015101259 A1 WO 2015101259A1
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WO
WIPO (PCT)
Prior art keywords
insulating layer
heat insulating
electrostatic chuck
layer sheet
heat
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PCT/CN2014/095353
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English (en)
French (fr)
Inventor
聂淼
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Priority to JP2016541702A priority Critical patent/JP6524098B2/ja
Priority to KR1020167016577A priority patent/KR20160088426A/ko
Publication of WO2015101259A1 publication Critical patent/WO2015101259A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0503—13th Group
    • H01L2924/05032—AlN

Definitions

  • the present invention relates to the field of semiconductor device manufacturing, and in particular, to a method for fabricating an electrostatic chuck, a chamber, and an electrostatic chuck.
  • Electrostatic chucks are often used to carry and hold wafers during semiconductor manufacturing to avoid wafer movement or misalignment during the process. Because electrostatic chucks have the advantage of reducing mechanical contact to the wafer, increasing the area at which the wafer can be efficiently processed, electrostatic chucks are often employed in the process chamber to carry and secure the wafer.
  • the existing chuck structure is as shown in FIG. 1.
  • the chuck seat 5 is provided with a heat insulating adhesive layer 4, a heater 3, a metal layer 2 and an insulating layer 1 from bottom to top, wherein two of the insulating layers 1 are disposed.
  • the electrodes 6 are connectable to the positive and negative electrodes of the external DC power source, so that electrostatic attraction can be generated to fix the wafer placed on the insulating layer 1.
  • the heater 3 is provided with a resistance wire capable of generating heat to heat the wafer after energization, and in order to improve the heating efficiency, an insulating adhesive layer 4 is disposed between the heater 3 and the chuck holder 5 to prevent heat from being applied to the card.
  • the tray 5 is delivered.
  • the heat insulating adhesive layer 4 employs a silicone adhesive having better heat insulating properties.
  • the insulating adhesive layer 4 is formed by coating a silicone adhesive on the heater 3 and/or the chuck holder 5 to form an insulating bond between the heater 3 and the chuck holder 5.
  • Layer 4 is used to bond the heater 3 and the chuck base 5 together and to insulate therebetween.
  • the applied silicone resin adhesive needs to have a large thickness.
  • the silicone resin adhesive is artificially coated, it is difficult to ensure the flatness of the coating, so that in the subsequent wafer processing, the wafer fixed by the electrostatic chuck may be inclined at an angle, which affects the temperature during heating. Uniformity, while also leading to the quality of the process of wafer processing.
  • manual coating It is also difficult to ensure the sealing property of the heat insulating adhesive layer 4, which easily causes a vacuum leak, resulting in failure of the entire electrostatic chuck manufacturing.
  • the present invention provides an electrostatic chuck, the electrostatic chuck includes a chuck seat, a heater and an insulating layer are disposed above the chuck seat, and the insulating layer is disposed above the heater. And an electrode for generating electrostatic attraction is disposed in the insulating layer, and the electrostatic chuck further includes a heat insulating layer sheet stacked on the chuck seat and the heater The heat insulation layer is formed between the two.
  • the heat insulation layer sheet comprises a plurality of heat insulation films.
  • the material of the heat insulation film is polyimide, and the heat insulation layer sheet is formed by vacuum heat pressing.
  • the heat insulating film has a thickness of 0.04 mm to 0.06 mm, and the heat insulating layer sheet has a thickness of 0.3 mm to 0.6 mm.
  • the upper surface of the heat insulation layer sheet is bonded to the heater, and the lower surface of the heat insulation layer sheet is bonded to the chuck seat.
  • the insulating layer is made of alumina ceramic or aluminum nitride ceramic.
  • the air guiding channel is further disposed in the insulating layer, and the air guiding channel is used to introduce a temperature regulating gas to make the temperature of the insulating layer uniform.
  • the electrostatic chuck further comprises a metal layer, the metal layer being disposed between the insulating layer and the heater.
  • the chuck seat is provided with a cooling channel for introducing a cooling liquid to cool the electrostatic chuck.
  • the present invention also provides a chamber, the chamber including A susceptor, and the chamber further includes an electrostatic chuck provided by any of the above aspects of the invention, the electrostatic chuck being disposed on the susceptor.
  • the present invention also provides a method of fabricating an electrostatic chuck for fabricating the electrostatic chuck provided by the present invention.
  • the method includes at least a heat insulating layer sheet forming step and a heat insulating layer sheet mounting step, wherein in the heat insulating layer sheet forming step, a heat insulating layer sheet is prepared; and the heat insulating layer sheet is prepared In the mounting step, a heat insulating layer sheet is stacked between the chuck holder and the heater to form a heat insulating layer.
  • a multilayer heat insulating film is first obtained, and then the multilayer heat insulating film is entirely processed to form a heat insulating layer sheet.
  • a heat insulating film having a multilayer material of polyimide is prepared, and then the multilayer heat insulating film is integrally formed into a heat insulating layer sheet by a vacuum hot pressing process.
  • a plurality of heat insulating films having a thickness of 0.04 mm to 0.06 mm are prepared, and then the multilayer heat insulating film is integrally formed into a thickness of 0.3 mm by a vacuum hot pressing process. ⁇ 0.6mm insulation layer sheet.
  • the upper surface of the heat insulating layer sheet is bonded to the heater, and the lower surface of the heat insulating layer sheet is adhered to the chuck holder Together form an insulating layer.
  • the heat insulating layer is formed by providing a prefabricated heat insulating layer sheet between the chuck holder and the heater, thereby effectively overcoming the flatness of the heat insulating adhesive layer in the prior art. It is difficult to ensure and the problem of vacuum leakage is easy to occur, which not only improves the yield of the electrostatic chuck, but also improves the quality of the process when the electrostatic chuck is used for semiconductor processing.
  • the electrostatic chuck provided by the invention can avoid the repeated coating and repeated equalization in the process of artificially coating the thermal insulation layer in the prior art, and reduces the complicated processing of the electrostatic chuck. degree.
  • the electrostatic chuck provided by the present invention is included in the chamber provided by the present invention, so that the chamber effectively overcomes the low flatness and easyness of the existing chamber due to the presence of the electrostatic chuck of the electrostatic chuck disposed therein. Problems such as low process quality during semiconductor processing due to problems such as vacuum leaks.
  • the electrostatic chuck manufacturing method provided by the present invention forms a heat insulating layer by first preparing a heat insulating layer sheet and then stacking the prepared heat insulating layer sheet between the chuck seat and the heater.
  • the heat insulating layer sheet is separately prepared in advance, it can effectively overcome the problems of low flatness of the heat insulating adhesive layer in the prior art and easy occurrence of vacuum leakage, which not only improves the yield of the electrostatic chuck.
  • the quality of the process when the electrostatic chuck is applied for semiconductor processing is also improved.
  • the electrostatic chuck manufacturing method provided by the invention can also avoid the repeated coating and repeated equalization problems in the process of artificially coating the rubber to form the heat insulating layer in the prior art, thereby reducing the complexity of the electrostatic chuck manufacturing and improving the complexity. Production efficiency.
  • FIG. 1 is a view showing an example of a structure of a conventional electrostatic chuck
  • FIG. 2 is a diagram showing an example of an electrostatic chuck structure according to an embodiment of the present invention.
  • FIG. 3 is a view showing an example of a structure of a heat insulating layer sheet according to an embodiment of the present invention.
  • FIG. 4 is a diagram showing an example of another electrostatic chuck structure according to an embodiment of the present invention.
  • FIG. 5 is a schematic flow chart of a method for fabricating an electrostatic chuck according to an embodiment of the present invention.
  • an electrostatic chuck is provided. As shown in FIGS. 2 to 4, the electrostatic chuck may be provided with a chuck holder 10, a heat insulating layer 40, a heater 20, and an insulating layer 30 from bottom to top. .
  • An electrode 31 for generating electrostatic attraction is further disposed in the insulating layer 30.
  • the two electrodes 31 can externally connect the positive and negative electrodes of the direct current power source to generate electrostatic attraction on the insulating layer 30 to fix the wafer.
  • the leads of the electrode 31 pass through the electrostatic chuck from the inside of the insulating layer 30 and pass out from the bottom surface of the chuck holder 10 to connect an external DC power source.
  • the insulating layer 40 is machined from a prefabricated insulating layer sheet.
  • the material of the heat insulating layer sheet may be a high temperature heat insulating material such as polyimide.
  • the heat insulating layer sheet is formed into a shape that matches the shape of the chuck holder 10 and the heater 20, and is placed between the chuck holder 10 and the heater 20 to form a heat insulating layer.
  • the heat insulating layer 40 can prevent heat generated by the heater 20 from being transferred to the chuck holder 10 when the electrostatic chuck is applied in a semiconductor processing process.
  • a corresponding through hole may be provided in the heat insulating layer 40 for the lead of the electrode 31 to be taken away. line.
  • the electrostatic chuck provided by the present invention adopts a prefabricated heat insulation layer sheet to insulate the chuck seat 10 from the heater 20, since the heat insulation layer sheet can be pre-processed, that is, the heat insulation layer
  • the sheet can be made in advance and independently so that its flatness can be better controlled. Therefore, the electrostatic chuck provided by the present invention overcomes the existing heater in comparison with the prior art. 3 and/or the use of manual coating on the chuck seat 5 to form an insulating adhesive layer is difficult to ensure flatness and easy to cause vacuum leakage, and at the same time reduces the difficulty in processing the electrostatic chuck.
  • the heat insulating layer sheet may include a multilayer heat insulating film 41.
  • the multilayer heat insulating film 41 can be laminated to form a heat insulating layer sheet, so that the heat insulating layer 40 formed of the heat insulating layer sheet can have a better heat insulating effect.
  • the number of layers of the heat insulating film 41 can be flexibly adjusted according to actual needs to obtain a desired thickness of the heat insulating layer sheet and heat insulating properties.
  • the material of the heat insulating film 41 may be polyimide, and the multilayer polyimide film may be laminated one by one. After the connection is completed, a heat insulating layer sheet is formed.
  • the multilayer polyimide film may be layer-by-layer bonded to form a heat insulating layer sheet; or, the multilayer polyimide film may be formed by heat-pressing under vacuum to form a heat insulating layer sheet, for example,
  • the multilayer polyimide film can be press-bonded in a vacuum by a vacuum hot press to form a heat insulating layer sheet.
  • the vacuum polyimide can firmly bond the multilayer polyimide film and is easy to process, so this mode is a preferred embodiment of the present invention.
  • the heat insulating film 41 made of polyimide may have a thickness of 0.04 mm to 0.06 mm, and the heat insulating layer sheet may have a thickness of 0.3 mm to 0.6 mm.
  • a polyimide film having a thickness of 0.05 mm may be selected, and the thickness of the heat insulating layer sheet formed by the multilayer polyimide film may be between 0.3 mm and 0.6 mm for processing and obtaining better separation. Thermal effect. It can be understood that the above is only a preferred embodiment provided by the present invention.
  • the thickness of the heat insulating layer sheet can be adjusted as needed, for example, if the heater 20 is heated at a higher temperature or a higher power, Then, the number of the heat insulation film 41 can be appropriately increased to increase the thickness of the heat insulation layer sheet, thereby improving the heat insulation effect; if the heater 20 is heated at a slightly lower temperature or a lower power, a smaller number of heat insulation films can be selected. 41 to reduce processing complexity.
  • the upper surface of the heat insulating layer 40 may be bonded to the heater 20, and the heat insulating layer The lower surface of 40 can be bonded to the chuck base 10. That is, as a preferred embodiment of the present invention, the prefabricated heat insulating layer 40 may be bonded and fixed to the heater 20 and the chuck base 10, respectively, by bonding.
  • the material of the insulating layer 30 may be alumina ceramic or aluminum nitride. ceramics.
  • the upper surface of the insulating layer 30 is provided with a protrusion 32, and a recess is formed between the adjacent protrusions 32.
  • an air guiding passage 33 is provided in the insulating layer 30, and the air guiding passage 33 communicates with a recess of the upper surface of the insulating layer 30 for introducing a gas into the recess.
  • the upper surface of the insulating layer 30 may be provided with a plurality of protrusions 32. When the wafer is placed on the insulating layer 30, the lower surface of the wafer will be in contact with the protrusion 32, and the inside of the insulating layer 30 may be provided with a gas guiding channel. 33.
  • the air guiding passage 33 can open a tempering gas such as a heating gas from the outside to the recess of the upper surface of the insulating layer 30, so that the heating gas fills the recess between the protrusions 32, and the above structure can be utilized from the insulating layer 30.
  • the heat and the heat from the heated gas provide a more uniform heating of the wafer.
  • the number of the air guiding passages 33 may be set according to actual needs.
  • the air guiding passages 33 may be disposed in a portion outside the insulating layer 30 and communicate with the recesses on the upper surface of the insulating layer 30 near the edges.
  • the heating gas introduced into the pilot gas passage 33 may be an inert gas having a certain heat such as helium gas, argon gas or the like.
  • the electrostatic chuck may further include a metal layer 50 stacked between the insulating layer 30 and the heater 20.
  • the metal layer 50 may be disposed on the heater 20, and the insulating layer 30 may be disposed on the metal layer 50.
  • the heater 20 may be heated to the metal layer 50, and then transferred by the metal layer 50.
  • the metal layer 50 may be a flat metal such that heat can be transferred to the insulating layer 30 more uniformly.
  • the metal layer 50 may be made of aluminum, and the metal layer 50 may be bonded and fixed to the insulating layer 30 and the heater 20, respectively, using an adhesive having better thermal conductivity.
  • a chucking channel 11 may be disposed in the chuck base 10, and the cooling channel 11 may be used to pass a cooling liquid to cool the electrostatic chuck.
  • the cooling liquid can be introduced into the cooling channel 11 to bring the electrostatic chuck into a thermal equilibrium state, and further, the cooling channel 11 is disposed to make the static electricity The chuck can quickly achieve a temperature drop when it needs to cool down.
  • the present invention effectively overcomes the prior art by providing a pre-made insulating layer sheet between the chuck holder and the heater to form a heat insulating layer.
  • the flatness of the heat-insulating adhesive layer is difficult to ensure and the problem of vacuum leakage is prone to occur, which not only improves the yield of the electrostatic chuck, but also improves the quality of the process when the electrostatic chuck is used for semiconductor processing.
  • the electrostatic chuck provided by the invention can avoid the problem of repeated coating and repeated equalization in the process of artificially coating the thermal insulation layer in the prior art, and reduces the processing complexity of the electrostatic chuck.
  • a chamber including a susceptor, and the chamber further includes the electrostatic chuck provided by the present invention described above, and the electrostatic chuck is disposed on the susceptor.
  • the chamber provided by the present invention comprises the electrostatic chuck provided by the present invention
  • the existing chamber is effectively overcome the low degree of flatness of the heat insulating adhesive layer due to the electrostatic chuck disposed therein and is prone to vacuum leakage, etc. Problems caused by low process quality during semiconductor processing.
  • the present invention also provides a method of fabricating an electrostatic chuck for fabricating the electrostatic chuck provided by the foregoing various embodiments.
  • the method includes at least a heat insulation layer sheet forming step 110 and a heat insulation layer sheet mounting step 120: in the heat insulation layer sheet forming step 110, preparing a heat insulating layer sheet; In the layer sheet mounting step 120, the insulating layer sheet is stacked between the chuck holder and the heater.
  • a heat insulation film is prepared, and then the one heat insulation film is folded into a plurality of layers to form a multilayer heat insulation film; or a plurality of layers are prepared first.
  • the heat insulating film is then laminated to form a plurality of heat insulating films; finally, the multilayer heat insulating film is formed to form a heat insulating layer sheet.
  • a multilayer heat insulating film can be formed into a heat insulating layer sheet by a vacuum hot pressing process.
  • polyimide has good thermal insulation properties and superior comprehensive properties, so the material of the thermal insulation film can be selected from polyimide.
  • the thickness of the single-layer heat insulating film may be 0.04 mm to 0.06 mm, and then the multilayer heat insulating film may be formed into a heat insulating layer sheet having a thickness of 0.3 mm to 0.6 mm by a vacuum hot pressing process.
  • the upper surface of the heat insulation layer sheet is bonded to the heater, and the lower surface of the heat insulation layer sheet is bonded to the chuck seat, thereby stacking the heat insulation layer sheets.
  • the chuck holder and the heater to form an electrostatic chuck.
  • the method for fabricating an electrostatic chuck provided by the present invention further includes a gas guiding passage setting step of disposing a gas guiding passage in the insulating layer for introducing a temperature regulating gas such as a heating gas to make the temperature of the insulating layer uniform.
  • the method for fabricating an electrostatic chuck provided by the present invention further includes a metal layer setting step of placing a metal layer between the insulating layer and the heater to more uniformly transfer heat to the insulating layer.
  • the method for fabricating the electrostatic chuck provided by the present invention further includes a cooling channel setting step of providing a cooling channel in the chuck holder for introducing a cooling liquid to cool the electrostatic chuck.
  • the electrostatic chuck manufacturing method provided by the present invention forms a heat insulating layer by first preparing a heat insulating layer sheet and then stacking the prepared heat insulating layer sheet between the chuck seat and the heater.
  • the heat insulating layer sheet is separately prepared in advance, it can effectively overcome the problems of low flatness of the heat insulating adhesive layer in the prior art and easy occurrence of vacuum leakage, which not only improves the yield of the electrostatic chuck.
  • the quality of the process when the electrostatic chuck is applied for semiconductor processing is also improved.
  • the electrostatic chuck manufacturing method provided by the present invention can also avoid the manual in the prior art.
  • the repeated coating and repeated equalization problems in the process of coating the rubber to form the heat insulation layer reduce the complexity of the electrostatic chuck production and improve the production efficiency.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)

Abstract

一种静电卡盘、腔室和静电卡盘的制作方法。静电卡盘包括卡盘座（10），卡盘座（10）上方设置有加热器（20）和绝缘层（30），绝缘层（30）设置在加热器（20）上方，且绝缘层（30）内设置有用于产生静电引力的电极，且静电卡盘包括隔热层片材，隔热层片材叠置在卡盘座（10）和加热器（20）之间构成隔热层（40），相应地，还提供一种腔室。静电卡盘、腔室和静电卡盘的制作方法，有效克服了隔热粘合层的平整度难以保证且容易出现真空泄露的问题，同时，能够降低加工复杂度。

Description

静电卡盘、腔室和静电卡盘的制作方法 技术领域
本发明涉及半导体设备制造领域，尤其涉及一种静电卡盘、腔室和静电卡盘的制作方法。
背景技术
卡盘在半导体生产过程中常用于承载并固定晶片，以避免晶片在工艺过程中出现移动或者错位现象。由于静电卡盘具有减少了对晶片的机械接触、增大了晶片可被有效加工的面积等优势，因而在工艺腔室中经常采用静电卡盘来承载并固定晶片。
现有的卡盘结构如图1所示，卡盘座5上从下至上依次设置有隔热粘合层4、加热器3、金属层2和绝缘层1，其中绝缘层1中设置有两个电极6，且该两个电极6能够连接外部直流电源的正负极，从而能够产生静电引力以固定放置在绝缘层1上的晶片。加热器3中设置有电阻丝，能够在通电后产生热量对晶片进行加热，为了提高加热效率，在加热器3和卡盘座5之间设置了隔热粘合层4，以阻止热量向卡盘座5传递。
通常，隔热粘合层4采用的是具有较好隔热性能的硅树脂粘合剂。形成隔热粘合层4的方式为，将硅树脂粘合剂涂覆在加热器3和/或卡盘座5上，从而在加热器3和卡盘座5之间形成了隔热粘合层4，以将加热器3和卡盘座5粘接在一起并使二者之间隔热。为了具有较好的隔热效果，所涂覆的硅树脂粘合剂需要有较大的厚度。然而，人工涂覆硅树脂粘合剂时，难以保证涂覆的平整度，这样就可能在后续的晶片加工过程中，使静电卡盘所固定的晶片存在一定角度的倾斜，影响加热时的温度均匀性，同时还会导致晶片加工的工艺质量。此外，采用人工涂覆 的方式也难以保证隔热粘合层4的密封性，容易造成真空泄漏，导致整个静电卡盘制造失败。
发明内容
有鉴于此，本发明的目的在于提供一种静电卡盘以及腔室，以使静电卡盘中的隔热层片材具有较好的平整度。
为实现上述目的，本发明提供一种静电卡盘，所述静电卡盘包括卡盘座，所述卡盘座上方设置有加热器和绝缘层，所述绝缘层设置在所述加热器上方，且所述绝缘层内设置有用于产生静电引力的电极，并且所述静电卡盘还包括隔热层片材，所述隔热层片材叠置在所述卡盘座和所述加热器之间而构成隔热层。
其中，所述隔热层片材包括多层隔热膜。
其中，所述隔热膜的材料为聚酰亚胺，所述多层隔热膜经真空热压后形成所述隔热层片材。
其中，所述隔热膜的厚度为0.04mm～0.06mm，所述隔热层片材的厚度为0.3mm～0.6mm。
其中，所述隔热层片材上表面与所述加热器粘合，所述隔热层片材下表面与所述卡盘座粘合。
其中，所述绝缘层材质为氧化铝陶瓷或氮化铝陶瓷。
其中，所述绝缘层内还设置有导气通道，所述导气通道用于导入调温气体，以使所述绝缘层温度均匀。
其中，所述静电卡盘还包括金属层，所述金属层叠置在所述绝缘层与所述加热器之间。
其中，所述卡盘座内设置有冷却沟道，所述冷却沟道用于通入冷却液体以冷却所述静电卡盘。
作为本发明的另一个方面，本发明还提供一种腔室，所述腔室包括 基座，并且所述腔室还包括本发明上述任意方案提供的静电卡盘，所述静电卡盘设置在所述基座上。
作为本发明的又一个方面，本发明还提供一种静电卡盘的制作方法，用于制作本发明提供的静电卡盘。该方法至少包括隔热层片材制作步骤和隔热层片材安装步骤，其中，在所述隔热层片材制作步骤中，制备获得隔热层片材；在所述隔热层片材安装步骤中，使隔热层片材叠置在所述卡盘座和所述加热器之间而形成隔热层。
其中，在所述隔热层片材制作步骤中，先获得多层隔热膜，而后将多层隔热膜整体加工形成隔热层片材。
其中，在所述隔热层片材制作步骤中，先制备多层材料为聚酰亚胺的隔热膜，而后利用真空热压工艺而将多层隔热膜整体制成隔热层片材。
其中，在所述隔热层片材制作步骤中，先制备出多个厚度为0.04mm～0.06mm隔热膜，而后利用真空热压工艺而将多层隔热膜整体制成厚度为0.3mm～0.6mm隔热层片材。
其中，在所述隔热层片材安装步骤中，将所述隔热层片材的上表面与所述加热器粘合，将所述隔热层片材下表面与所述卡盘座粘合而形成隔热层。
本发明的有益效果如下：
在本发明提供的静电卡盘中，通过在卡盘座和加热器之间设置预制的隔热层片材而形成隔热层，有效克服了现有技术中的隔热粘合层的平整度难以保证且容易出现真空泄露的问题，不仅提高了静电卡盘的良率，而且还提高了应用该静电卡盘进行半导体加工时的工艺质量。此外，本发明提供的静电卡盘还能够避免现有技术中人工涂胶形成隔热层的工艺过程中的反复涂覆、反复找平等问题，降低了静电卡盘的加工复杂 度。
在本发明提供的腔室中包含有本发明提供的静电卡盘，因此该腔室有效克服了现有腔室因其所配置的静电卡盘存在隔热粘合层的平整度较低且容易出现真空泄露等问题而导致的进行半导体加工时工艺质量低等问题。
本发明提供的静电卡盘制作方法，通过先制备隔热层片材，而后使制备好的隔热层片材叠置在卡盘座和加热器之间而形成隔热层。这样，由于隔热层片材是预先独立制备的，因此能够有效克服现有技术中的隔热粘合层的平整度低且容易出现真空泄露等问题，这不仅提高了静电卡盘的良率，而且还提高了应用该静电卡盘进行半导体加工时的工艺质量。此外，本发明提供的静电卡盘制作方法还能够避免现有技术中人工涂胶形成隔热层的工艺过程中的反复涂覆、反复找平等问题，降低了静电卡盘制作的复杂度，提高了制作效率。
附图说明
附图是用来提供对本发明的进一步理解，并且构成说明书的一部分，与下面的具体实施方式一起用于解释本发明，但并不构成对本发明的限制。在附图中：
图1为现有的静电卡盘结构示例图；
图2为本发明一个实施例提供的静电卡盘结构示例图；
图3为本发明一个实施例提供的隔热层片材结构示例图；
图4为本发明一个实施例提供的另一静电卡盘结构示例图；以及
图5为本发明一个实施例提供的静电卡盘的制作方法的流程示意图。
附图标记说明
1、30-绝缘层；2、50-金属层；3、20-加热器；4-隔热粘合层；5、 10-卡盘座；6、31-电极；11-冷却沟道；32-凸起；33-导气通道；40-隔热层；41-隔热膜。
具体实施方式
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限制本发明。
作为本发明的一个方面，提供一种静电卡盘，如图2至图4所示，该静电卡盘由下至上可以设置有卡盘座10、隔热层40、加热器20和绝缘层30。
其中，绝缘层30内还设置有用于产生静电引力的电极31。两个电极31能够外接直流电源的正负极，从而在绝缘层30上产生静电引力以固定晶片。通常，电极31的引线从绝缘层30的内部穿过静电卡盘并从卡盘座10的底面穿出以连接外部直流电源。
隔热层40是由预制的隔热层片材加工而来的。该隔热层片材的材料可以采用高温绝热材料，例如聚酰亚胺(polyimide)。制作静电卡盘时，将隔热层片材制作成与卡盘座10和加热器20形状相适配的形状，并将其放置在卡盘座10和加热器20之间而形成隔热层，以便该静电卡盘应用在半导体处理工艺时，该隔热层40能够阻止加热器20产生的热量向卡盘座10传递。并且，为使由绝缘层30引出的电极31的引线能够穿过隔热层40而到达卡盘座10的底面，在隔热层40上可以设置有相应的通孔，供电极31的引线走线。
本发明提供的静电卡盘中采用了预制的隔热层片材来实现卡盘座10与加热器20的隔热，由于该隔热层片材可以预先加工制成，即，该隔热层片材可以预先且独立地制作，这样就能够较好地控制其平整度。因此，与现有技术相比，本发明提供的静电卡盘克服了现有的在加热器 3和/或卡盘座5上利用人工涂覆来形成隔热粘合层时导致的难以保证平整度以及容易造成真空泄露的问题，同时降低了静电卡盘的加工难度。
更进一步地，如图3所示，隔热层片材可以包括多层隔热膜41。具体地，多层隔热膜41可以逐层叠置而形成隔热层片材，这样，可以使得由该隔热层片材形成的隔热层40具有更好的隔热效果。在实际应用中，当隔热层片材采用上述结构时，可以根据实际需求灵活调整隔热膜41的层数，以获得期望的隔热层片材的厚度以及隔热性能。
更进一步地，因聚酰亚胺具有较好的隔热性能以及优越的综合性能，因此隔热膜41的材料可以为聚酰亚胺，并且可以将多层聚酰亚胺膜逐层叠置并连接成为整体后形成隔热层片材。具体地，可以将多层聚酰亚胺膜逐层粘合后形成隔热层片材；或者，可以将多层聚酰亚胺膜通过真空热压后而形成隔热层片材，例如，可以将多层聚酰亚胺膜利用真空热压机在真空中压制连接成为一个整体而形成隔热层片材。采用真空热压能够使多层聚酰亚胺膜牢固连接，且加工较为便捷，因此该方式为本发明的一个优选实施方式。
更进一步地，采用聚酰亚胺制成的隔热膜41的厚度可以为0.04mm～0.06mm，隔热层片材的厚度可以为0.3mm～0.6mm。优选地，可以选用厚度在0.05mm的聚酰亚胺膜，多层聚酰亚胺膜形成的隔热层片材的厚度可以在0.3mm～0.6mm之间以便于加工并获得较佳的隔热效果。可以理解的是，上述仅为本发明所提供的优选实施方式，在实际应用中，可以根据需要调整隔热层片材的厚度，例如，若加热器20加热的温度较高或功率较大，则可以适当增加隔热膜41的数量以增加隔热层片材的厚度，从而提高隔热效果；若加热器20加热的温度略低或功率较小，则可以选用较少数量的隔热膜41以减少加工复杂度。
更进一步地，隔热层40的上表面可以与加热器20粘合，隔热层 40的下表面可以与卡盘座10粘合。即，作为本发明的优选实施方式，预制的隔热层40可以通过粘合的方式分别与加热器20和卡盘座10连接固定。
更进一步地，由于氧化铝陶瓷和氮化铝陶瓷均具有较好的绝缘性、耐高温性以及较高的机械强度和导热性能，因此，绝缘层30的材质可以为氧化铝陶瓷或氮化铝陶瓷。
更进一步地，如图4所示，绝缘层30的上表面设置有凸起32，两两相邻的凸起32之间形成凹陷。并且，绝缘层30内还设置有导气通道33，该导气通道33与绝缘层30的上表面的凹陷连通，用于向所述凹陷导入气体。具体地，绝缘层30的上表面可以设置有多个凸起32，当晶片放置在绝缘层30上时，晶片的下表面将与凸起32接触，绝缘层30的内部可以设置有导气通道33，该导气通道33可以从外部向绝缘层30上表面的凹陷通入诸如加热气体的调温气体，使得加热气体充满凸起32间的凹陷处，采用上述结构，能够利用来自绝缘层30的热量以及来自加热气体的热量来对晶片进行更为均匀的加热。其中，导气通道33的数量可以根据实际需要设置，优选地，可以将导气通道33设置在绝缘层30靠外侧的部分内，并与绝缘层30上表面上的靠近边缘处的凹陷连通。向导气通道33内通入的加热气体可以为具有一定热量的惰性气体，如氦气、氩气等。
更进一步地，可以如图4所示，该静电卡盘还可以包括金属层50，该金属层50叠置在绝缘层30和加热器20之间。具体地，可以在加热器20上设置金属层50，并将绝缘层30设置在金属层50上，采用上述方式，可以使得加热器20先对金属层50加热，再由金属层50将热量传递至绝缘层30，金属层50可以为平板的金属，这样能够更加均匀地将热量传递至绝缘层30。金属层50可以由铝制成，并且可以采用导热性能较好的粘合剂将金属层50分别与绝缘层30和加热器20粘接固定。
更进一步地，卡盘座10内可以设置有冷却沟道11，该冷却沟道11可以用于通入冷却液体以冷却该静电卡盘。具体地，在利用静电卡盘对晶片进行控温的过程中，可以向冷却沟道11内通入冷却液体，以使得静电卡盘达到热平衡状态，此外，设置该冷却沟道11，可以使静电卡盘在需要降温时能够快速地实现温度下降。
上述为对本发明所提供的静电卡盘进行的描述，可以看出，本发明通过在卡盘座和加热器之间设置预制的隔热层片材而形成隔热层，有效克服了现有技术中的隔热粘合层的平整度难以保证且容易出现真空泄露的问题，不仅提高了静电卡盘的良率，而且还提高了应用该静电卡盘进行半导体加工时的工艺质量。此外，本发明提供的静电卡盘还能够避免现有技术中人工涂胶形成隔热层的工艺过程中的反复涂覆、反复找平等问题，降低了静电卡盘的加工复杂度。
作为本发明的另一方面，提供一种腔室，该腔室包括基座，且该腔室还包括上述本发明所提供的静电卡盘，且该静电卡盘设置在上述基座上。
由于本发明提供的腔室包含有本发明提供的静电卡盘，因此有效克服了现有腔室因其所配置的静电卡盘存在隔热粘合层的平整度较低且容易出现真空泄露等问题而导致的进行半导体加工时工艺质量低等问题。
作为本发明的又一个方面，本发明还提供一种静电卡盘的制作方法，用于制作前述各个实施例提供的静电卡盘。如图5所示，该方法至少包括隔热层片材制作步骤110和隔热层片材安装步骤120：在隔热层片材制作步骤110中，制备获得隔热层片材；在隔热层片材安装步骤120中，使隔热层片材叠置在卡盘座和加热器之间。
具体地，在隔热层片材制作步骤110中，先制备出一个隔热膜，而后将所述一个隔热膜折叠成多层而形成多层隔热膜；或者先制备出多个 隔热膜，而后将所述多个隔热膜层叠形成多层隔热膜；最后，将多层隔热膜制作形成隔热层片材。例如，可以利用真空热压工艺而将多层隔热膜制成隔热层片材。在实际应用中，因聚酰亚胺具有较好的隔热性能以及优越的综合性能，因此隔热膜的材料可以选用聚酰亚胺。并且，可以使单层隔热膜的厚度为0.04mm～0.06mm，而后利用真空热压工艺而将多层隔热膜制成厚度为0.3mm～0.6mm隔热层片材。
在隔热层片材制作步骤120中，将隔热层片材的上表面与加热器粘合，将隔热层片材下表面与卡盘座粘合，从而将隔热层片材叠置在卡盘座和加热器之间，以形成静电卡盘。
此外，本发明提供的静电卡盘的制作方法还包括导气通道设置步骤，即，在绝缘层内设置导气通道，用于导入诸如加热气体的调温气体，以使绝缘层温度均匀。
进一步地，本发明提供的静电卡盘的制作方法还包括金属层设置步骤，即，将金属层叠置在所述绝缘层与所述加热器之间，以更加均匀地将热量传递至绝缘层。
进一步地，本发明提供的静电卡盘的制作方法还包括冷却沟道设置步骤，即，在卡盘座内设置冷却沟道用于通入冷却液体以冷却该静电卡盘。
关于导气通道、金属层和冷却沟道的更多说明可以参看前述结合图4所做的说明，在此不再赘述。
本发明提供的静电卡盘制作方法，通过先制备隔热层片材，而后使制备好的隔热层片材叠置在卡盘座和加热器之间而形成隔热层。这样，由于隔热层片材是预先独立制备的，因此能够有效克服现有技术中的隔热粘合层的平整度低且容易出现真空泄露等问题，这不仅提高了静电卡盘的良率，而且还提高了应用该静电卡盘进行半导体加工时的工艺质量。此外，本发明提供的静电卡盘制作方法还能够避免现有技术中人工 涂胶形成隔热层的工艺过程中的反复涂覆、反复找平等问题，降低了静电卡盘制作的复杂度，提高了制作效率。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (15)

  1. 一种静电卡盘，所述静电卡盘包括卡盘座，所述卡盘座上方设置有加热器和绝缘层，所述绝缘层设置在所述加热器上方，且所述绝缘层内设置有用于产生静电引力的电极，其特征在于，所述静电卡盘还包括隔热层片材，所述隔热层片材叠置在所述卡盘座和所述加热器之间而构成隔热层。
  2. 根据权利要求1所述的静电卡盘，其特征在于，所述隔热层片材包括多层隔热膜。
  3. 根据权利要求2所述的静电卡盘，其特征在于，所述隔热膜的材料为聚酰亚胺，所述多层隔热膜经真空热压后形成所述隔热层片材。
  4. 根据权利要求3所述的静电卡盘，其特征在于，所述隔热膜的厚度为0.04mm～0.06mm，所述隔热层片材的厚度为0.3mm～0.6mm。
  5. 根据权利要求1至4中任意一项所述的静电卡盘，其特征在于，所述隔热层片材上表面与所述加热器粘合，所述隔热层片材下表面与所述卡盘座粘合。
  6. 根据权利要求1至4中任意一项所述的静电卡盘，其特征在于，所述绝缘层材质为氧化铝陶瓷或氮化铝陶瓷。
  7. 根据权利要求1至4中任意一项所述的静电卡盘，其特征在于，所述绝缘层内还设置有导气通道，所述导气通道用于导入调温气体，以使所述绝缘层温度均匀。
  8. 根据权利要求1至4中任意一项所述的静电卡盘，其特征在于，所述静电卡盘还包括金属层，所述金属层叠置在所述绝缘层与所述加热器之间。
  9. 根据权利要求1至4中任意一项所述的静电卡盘，其特征在于，所述卡盘座内设置有冷却沟道，所述冷却沟道用于通入冷却液体以冷却所述静电卡盘。
  10. 一种腔室，所述腔室包括基座，其特征在于，所述腔室还包括权利要求1至9中任意一项所述的静电卡盘，所述静电卡盘设置在所述基座上。
  11. 一种制作权利要求1所述的静电卡盘的方法，其特征在于，至少包括隔热层片材制作步骤和隔热层片材安装步骤，
    在所述隔热层片材制作步骤中，制备获得隔热层片材；
    在所述隔热层片材安装步骤中，使隔热层片材叠置在所述卡盘座和所述加热器之间而形成隔热层。
  12. 根据权利要求11所述的制作方法，其特征在于，在所述隔热层片材制作步骤中，先获得多层隔热膜，而后将多层隔热膜整体加工形成隔热层片材。
  13. 根据权利要求12所述的制作方法，其特征在于，在所述隔热层片材制作步骤中，先制备多层材料为聚酰亚胺的隔热膜，而后利用真空热压工艺而将多层隔热膜整体制成隔热层片材。
  14. 根据权利要求13所述的制作方法，其特征在于，在所述隔热层片材制作步骤中，先制备出多个厚度为0.04mm～0.06mm隔热膜，而后利用真 空热压工艺而将多层隔热膜整体制成厚度为0.3mm～0.6mm隔热层片材。
  15. 根据权利要求11至14中任意一项所述的制作方法，其特征在于，在所述隔热层片材安装步骤中，将所述隔热层片材的上表面与所述加热器粘合，将所述隔热层片材下表面与所述卡盘座粘合而形成隔热层。
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