WO2015100897A1 - 阵列基板及其制备方法、显示装置 - Google Patents

阵列基板及其制备方法、显示装置 Download PDF

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WO2015100897A1
WO2015100897A1 PCT/CN2014/076621 CN2014076621W WO2015100897A1 WO 2015100897 A1 WO2015100897 A1 WO 2015100897A1 CN 2014076621 W CN2014076621 W CN 2014076621W WO 2015100897 A1 WO2015100897 A1 WO 2015100897A1
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Prior art keywords
thin film
film transistor
gate
forming
array substrate
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PCT/CN2014/076621
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English (en)
French (fr)
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李延钊
王刚
陈海晶
沈武林
方金钢
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京东方科技集团股份有限公司
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Priority to US14/422,818 priority Critical patent/US9443875B2/en
Publication of WO2015100897A1 publication Critical patent/WO2015100897A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]

Definitions

  • the invention belongs to the technical field of display device preparation, and particularly relates to an array substrate, a preparation method thereof and a display device. Background technique
  • the oxide semiconductor indium gallium zinc oxide (InGaZn0 4 ; IGZO ) is used as a material for the active layer of the thin film transistor because of its high mobility, uniformity and preparation at room temperature.
  • the thin film transistor structure is a bottom gate type structure.
  • FIG. 1 it is a basic 2T1C pixel structure including: 2 thin film transistors (ie, a first thin film transistor M1 and a second thin film transistor M2), and a storage capacitor C1, a first thin film transistor M1.
  • the source is connected to the gate of the second thin film transistor M2.
  • the source and drain electrodes 106 of the first and second thin film transistors M1 and M2 and their respective active regions 103 are connected through the second contact vias 105.
  • the gate electrode 102 of the second thin film transistor (drive transistor) M2 and the source 106 of the first thin film transistor (switching transistor) M1 are connected through the first contact via 104; by adjusting the gate voltage of the second thin film transistor M2 (ie, The source voltage of the first thin film transistor M1 can control the magnitude of the current flowing through the second thin film transistor M2, thereby controlling the amount of light emitted by the corresponding organic light emitting layer of each pixel unit.
  • the technician found that the AMOLED backplane (array substrate) often has leakage phenomenon, which seriously affects the yield of the product.
  • the first thin film transistor M1 is used as a switching transistor
  • the second thin film transistor M2 is used as a driving tube
  • the source and driving of the switching transistor are used.
  • Gate of the tube Electrical connections must be made through contact vias.
  • two contact via patterns are often formed on the photoresist by the same step exposure development (Mask-Photo) process, and then through the same channel.
  • Two contact vias are prepared by dry etching.
  • the long-time dry etching at the second contact via 105 causes the material of the active region 103 and the gate insulating layer disposed between the active region 103 and the gate 102 to be further etched and broken.
  • the source drain 106 deposited in the subsequent process is connected to the bottom gate 102, thereby causing serious leakage of the backplane, so that the backplane is finally scrapped and the yield is reduced.
  • the technical problem to be solved by the present invention includes providing a method for fabricating an array substrate for preventing leakage of a thin film transistor, an array substrate, and a display device in view of the above-described deficiencies of the conventional array substrate.
  • the technical solution adopted to solve the technical problem of the present invention is a method for preparing an array substrate, comprising the following steps:
  • an active region is formed first, and then a gate is formed, so that the gate is located above the active region, so that the gate metal is etched as a carrier when the second contact via is formed.
  • the resistance of the gate metal to the etch is greater than the resistance of the active region material to the etch, so that it can prevent the etch time from being contacted for the second contact when the first contact via and the second contact via are simultaneously formed.
  • the hole is relatively long and the gate metal disposed under the second contact via is etched through, thereby causing a problem of leakage of the array substrate.
  • the method further includes:
  • a buffer layer is formed on the substrate.
  • the buffer layer is made of silicon oxide or silicon nitride and has a thickness of between 5 and 500 nm.
  • the materials of the source, the drain and the connection of all the thin film transistors are made of any one of molybdenum, copper and aluminum, and the thickness is between l and 500 nm.
  • the material of the active region of all the thin film transistors is any one of indium gallium zinc oxide, indium zinc oxide, indium tin oxide, indium gallium tin oxide, amorphous silicon, and polycrystalline silicon, and the thickness thereof is 5 to 200 nm. between.
  • the gate material of all of the thin film transistors is any one of molybdenum, copper, and aluminum.
  • the technical solution adopted to solve the technical problem of the present invention is an array substrate, It is prepared by any of the above preparation methods.
  • the array substrate is an OLED array substrate
  • the first thin film transistor is a switching tube
  • the second thin film transistor is a driving tube.
  • the technical solution adopted to solve the technical problem of the present invention is a display device including the above array substrate.
  • 1 is a circuit diagram of a conventional 2T1C pixel structure
  • FIG. 2 is a schematic structural view of one side of a conventional array substrate
  • FIG. 3 is a schematic structural view of another side of a conventional array substrate
  • FIG. 4 is a structural view showing one side of an array substrate prepared by the method for preparing an array substrate according to Embodiment 1 of the present invention
  • FIG. 5 is a structural view showing another side of an array substrate prepared by the method for fabricating an array substrate according to Embodiment 1 of the present invention.
  • Fig. 6 is a schematic view showing the process of the method of fabricating the array substrate of the embodiment 1 of the present invention.
  • the reference numerals are: 101, substrate; 102, gate; 103, active region; 104, first contact via; 105, second contact via; 106, source/drain; 107, buffer layer 108, a gate insulating layer; 109, a connection line; 110, a planarization layer; 111, a deuterated layer; a first thin film transistor M1; and a second thin film transistor M2.
  • the method for preparing the array substrate provided in this embodiment will be described with reference to FIGS. 4, 5, and 6.
  • the preparation method specifically includes the following steps:
  • Step 1 Depositing a buffer layer 107 on the substrate 101 by sputtering.
  • the material of the buffer layer 107 may be silicon oxide, silicon nitride or an organic insulating material; Its thickness is preferably between 5 and 500 nm.
  • Step 2 On the substrate on which the buffer layer 107 is formed, a pattern including the first thin film transistor and the second thin film transistor active region 103 is formed by a patterning process.
  • the buffer layer 107 film may be deposited by magnetron sputtering, and then annealed at 300 ° C for 1 hour in an air atmosphere, and further, a patterned pattern of the active region 103 is formed by a patterning process.
  • the material of the active layer may be selected from any one of indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium tin oxide (ITO), indium gallium tin oxide (InGaSnO), amorphous silicon, polycrystalline silicon, etc., of course. It may be other semiconductor materials; its thickness is preferably between 5 and 200 nm.
  • Step 3 On the substrate on which the first thin film transistor and the second thin film transistor active region 103 are formed, a gate insulating layer 108 is formed, and the gate insulating layer 108 covers the thin film transistor active region 103.
  • the material of the gate insulating layer 108 is silicon oxide, silicon nitride, and an insulating material such as an organic insulating material; the thickness thereof is preferably between l and 300 nm.
  • Step 4 On the substrate on which the gate insulating layer 108 is formed, a pattern including the first thin film transistor and the second thin film transistor gate 102 is formed by a patterning process.
  • the material of the gate electrode 102 may be any one of molybdenum (Mo), copper (Cu), and aluminum (A1). Of course, it may be a metal material, an alloy material, or a composite conductive material; the thickness thereof is preferably from 1 to 300 nm. between.
  • a planarization layer 110 (electrical insulation) is formed on the substrate on which the first thin film transistor and the second thin film transistor gate 102 are formed.
  • the material of the planarization layer 110 may be silicon oxide or silicon nitride, and of course other insulating materials; the thickness is preferably between 5 and 500 mils.
  • Step 6 forming a second contact via 105 for electrically connecting the source and drain 106 of the first thin film transistor, the source and drain 106 of the second thin film transistor and the respective active layers 103 thereof by one patterning process, and
  • the first contact via 104 is electrically connected to the gate 102 of the second thin film transistor and the source 106 of the first thin film transistor.
  • Step 7 forming a pattern of the corresponding source and drain electrodes 106 on the contact vias 105 above the active regions 103 of the first and second thin film transistors by a patterning process, while above the gates 102 of the second thin film transistors Contact via 104 A metal connection line 109 for connecting the gate electrode 102 of the second thin film transistor and the source 106 of the first thin film transistor is formed.
  • the material of the source and drain electrodes 106 and the connection line 109 of the two thin film transistors may be any one of molybdenum (Mo), copper (Cu), and aluminum (A1), and may be metal materials, alloy materials, and composites. Conductive material; its thickness is between l ⁇ 500nm.
  • the etching time of the first contact via 104 is relatively long.
  • the carrier etched by the first contact via 104 is the gate 102, and the metal material of the gate 102 is relatively thick, and the ability to withstand etching is much higher than that of the active region 103. The ability to etch. Therefore, when the first contact via 104 and the second contact via 105 are simultaneously formed, the gate insulating layer 108 under the gate 102 and the gate can be prevented from being etched under the same etching time, thereby causing the gate. 102 is electrically connected to the active layer and even the source and drain electrodes 106, thereby causing leakage of the array substrate, thereby improving the yield of the product.
  • Step 8 Form a deuterated layer 111 on the substrate 101 that completes the above steps.
  • the material of the deuterated layer 111 may be silicon oxide or silicon nitride; and the thickness thereof is between 5 and 500 nm.
  • the gate is disposed between the active layer and the source and drain, so that when the first contact via 104 and the second contact via 105 are formed, the gate 102 metal is used as a long time.
  • the etched carrier, and thus the array substrate prepared, has greatly improved leakage resistance.
  • this embodiment only describes the preparation of two thin film transistors on the array substrate, and the pixel structure of the array substrate may be 2T1C type.
  • the present embodiment is also applicable to a 6T2C type pixel circuit, a timing control circuit, a scan driving circuit, a data driving circuit, a backplane testing circuit, an electrostatic prevention circuit, and a method of preparing a thin film transistor in other functional circuits of a TFT backplane.
  • the preparation principle is the same as the above method, and it is not described here that as long as the first contact via 104 and the second contact via 105 of the thin film transistor prepared by the above method are in the protection scope of the present invention. in.
  • the source and the drain of the thin film transistor are identical in structure. Therefore, the source and drain are also functionally interchangeable.
  • the drain is used as the signal input terminal and the source is used as the signal output terminal; however, the protection range of the present invention is not limited thereto, and the source is used as the signal input end of the TFT and the drain is used as the signal output terminal. It also falls within the scope of protection of the present invention.
  • Example 2
  • the embodiment provides an array substrate including a plurality of pixel units, each of the pixel units including a first thin film transistor and a second thin film transistor, and a gate electrode 102 and a first thin film of the second thin film transistor.
  • the transistor source 106 is connected through a first contact via 104 which is prepared by the preparation method described in Example 1.
  • the array substrate includes: an active region 103 of the first thin film transistor and the second thin film transistor formed over the buffer layer 107; a gate of the first thin film transistor and the second thin film transistor formed over the active region 103 An insulating layer 108; a gate electrode 102 of the first thin film transistor and the second thin film transistor formed over the gate insulating layer 108 and corresponding to the respective active regions 103, respectively; a planarization layer 110 formed over the gate electrode 102; Connecting to the source and drain electrodes 106 of the first and second thin film transistors of the respective active regions 103 through the planarization layer 110 and the gate insulating layer 108; and connecting to the first film through the planarization layer 110 The gate 102 of the transistor, and extending over the planarization layer 110, is coupled to the connection line 109 of the source 106 of the second thin film transistor.
  • the array substrate is an OLED array substrate
  • the first thin film transistor is a switching transistor
  • the second thin film transistor is a driving tube
  • the source 106 of the switching transistor is connected to the gate 102 of the driving tube.
  • the yield of the array substrate is greatly improved.
  • the source of the TFT may be used as a signal input terminal of the TFT, and the drain may be used as a signal output terminal.
  • the source of the switch will be connected to the data line.
  • the image data signal is accessed, and the drain of the switch is connected to the gate of the drive tube for controlling the current through the drive tube.
  • the embodiment provides a display device, which includes the array substrate described in Embodiment 2, and the display device may be: OLED panel, mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigation device, etc. A product or part that displays functionality.
  • the display device of this embodiment has the array substrate of the first embodiment, so that the yield is greatly improved.

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Abstract

一种阵列基板及其制备方法、显示装置。该制备方法包括：在基底（101）上通过构图形成包括第一薄膜晶体管和第二薄膜晶体管的有源区（103）的图形；在完成上述步骤的基底（101）上形成栅极绝缘层（108）；在完成上述步骤的基底（101）上，通过构图形成包括各薄膜晶体管的栅极（102）的图形；在完成上述步骤的基底（101）上形成隔离层（110）；在完成上述步骤的基底（101）上，形成用于各薄膜晶体管的源漏极（106）与各自有源区（103）电连接的第二接触过孔（105），以及用于第二薄膜晶体管的栅极（102）与第一薄膜晶管的源极（106）电连接的第一接触过孔（104）；在各薄膜晶体管的有源区（103）上的第二接触过孔（105）上形成相应的源、漏极（106）的图形，同时在第二薄膜晶体管的栅极（102）的第一接触过孔（104）上形成用于连接第二薄膜晶体管的栅极（102）和第一薄膜晶体管的源极（106）的连接线（109）。

Description

阵列基板及其制备方法、 显示装置 技术领域
本发明属于显示装置制备技术领域， 具体涉及一种阵列基板 及其制备方法、 显示装置。 背景技术
在 AMOLED 阵列基板制备工艺中， 氧化物半导体铟镓锌氧 化物（InGaZn04; IGZO ) 因其迁移率高、 均匀性好以及可在室温 下制备， 被用作薄膜晶体管有源层的材料， 通常该薄膜晶体管结 构为底栅型结构。
如图 1所示， 是最基本的 2T1C的像素结构， 其包括： 2个薄 膜晶体管 （即， 第一薄膜晶体管 Ml和第二薄膜晶体管 M2 ) , 以 及 1个存储电容器 C1 , 第一薄膜晶体管 Ml的源极与第二薄膜晶 体管 M2的栅极连接。
如图 2、 3所示， 在制作 2T1C结构的 AMOLED阵列基板时， 第一薄膜晶体管 Ml与第二薄膜晶体管 M2的源漏极 106和其各自 的有源区 103通过第二接触过孔 105连接， 第二薄膜晶体管 （驱 动管） M2的栅极 102和第一薄膜晶体管（开关管） Ml的源极 106 通过第一接触过孔 104连接； 通过调整第二薄膜晶体管 M2的栅 极电压 （即第一薄膜晶体管 Ml 的源极电压） 即可控制流过第二 薄膜晶体管 M2 的电流大小， 进而控制每个像素单元对应的有机 发光层的发光量。 但是， 在上述 AMOLED器件的制作过程中， 技 术人员发现 AMOLED背板（阵列基板）上经常出现漏电现象， 严 重影响产品的良品率。
在采用底栅型 TFT的 AMOLED显示装置中， 以采用 2T1C 为例， 在同一个像素单元中， 第一薄膜晶体管 Ml 作为开关管， 第二薄膜晶体管 M2作为驱动管， 开关管的源极与驱动管的栅极 需通过接触过孔进行电连接。 针对现有 AMOLED 显示装置中 AMOLED背板（阵列基板） 出现漏电的问题， 本发明的发明人发 现：
在第一接触过孔 104和第二接触过孔 105的制备过程中， 往 往采用同一步曝光显影 （Mask-Photo ) 工艺在光刻胶上制备出两 种接触过孔的图形， 再通过同一道干刻工艺刻蚀制备出两种接触 过孔。 但是在刻蚀过程中， 由于第一接触过孔 104所需的刻蚀深 度远大于第二接触过孔 105 的刻蚀深度， 因而对于第二接触过孔 105而言， 刻蚀时间过长。在第二接触过孔 105处的长时间的干法 过刻会造成此处的有源区 103的材料和设于有源区 103与栅极 102 间的栅极绝缘层被进一步刻蚀而断裂， 导致后续工艺所沉积的源 漏极 106与底部的栅极 102相连， 从而造成背板的严重漏电， 以 致背板最终报废， 良品率降低。
当然， 也可以采用将第一接触过孔 104和第二接触过孔 105 通过两次单独的构图工艺形成， 但是该方式工艺复杂、 生产效率 低。 发明内容
本发明所要解决的技术问题包括， 针对现有的阵列基板存在 的上述不足， 提供一种防止薄膜晶体管漏电的阵列基板的制备方 法、 阵列基板以及显示装置。
解决本发明技术问题所采用的技术方案是一种阵列基板的制 备方法， 包括如下步骤：
在基底上通过构图工艺形成包括第一薄膜晶体管和第二薄膜 晶体管的有源区的图形；
在完成上述步骤的基底上形成栅极绝缘层；
在完成上述步骤的基底上， 通过构图工艺形成包括第一薄膜 晶体管的栅极和第二薄膜晶体管的栅极的图形；
在完成上述步骤的基底上形成隔离层；
在完成上述步骤的基底上， 形成用于将第一薄膜晶体管的源 漏极、 第二薄膜晶体管的源漏极与其各自的有源区电连接的第二 接触过孔， 以及形成用于将第二薄膜晶体管的栅极与第一薄膜晶 管的源极电连接并位于第一薄膜晶体管的栅极的上方的第一接触 过孔； 以及
在完成上述步骤的基底上， 通过构图工艺在第一薄膜晶体管 和第二薄膜晶体管的有源区上方的第二接触过孔上形成相应的 源、 漏极的图形， 同时在第二薄膜晶体管的栅极上方的第一接触 过孔上方， 形成用于连接第二薄膜晶体管的栅极和第一薄膜晶体 管的源极的连接线。
本发明的阵列基板的制备方法中， 先形成有源区， 再形成栅 极， 故栅极位于有源区上方， 这样在形成第二接触过孔时以栅极 金属为刻蚀的承载体， 栅极金属对刻蚀的承受能力大于有源区材 料对刻蚀的承受能力， 故其可以防止在同时形成第一接触过孔和 第二接触过孔时， 由于刻蚀时间对于第二接触过孔相对较长而造 成设于第二接触过孔下方的栅极金属被刻蚀穿， 从而造成阵列基 板漏电的问题。
优选的是， 在基底上通过构图工艺形成包括第一薄膜晶体管 和第二薄膜晶体管的有源区的图形的步骤之前， 还包括：
在基底上形成緩冲层。
进一步优选的是， 所述緩冲层的材料为氧化硅或氮化硅， 其 厚度在 5~500nm之间。
进一步优选的是， 所有所述薄膜晶体管的源极、 漏极以及连 接线的材料均采用钼、 铜、 铝中任意一种， 且厚度均在 l~500nm 之间。
优选的是， 所有所述薄膜晶体管的有源区的材料为氧化铟镓 锌、 氧化铟锌、 氧化铟锡、 氧化铟镓锡、 非晶硅、 多晶硅中任意 一种， 其厚度在 5~200nm之间。
优选的是， 所有所述薄膜晶体管的栅极材料为钼、 铜、 铝中 任意一种。
解决本发明技术问题所采用的技术方案是一种阵列基板， 其 是由上述任意一种制备方法制备而成的。
优选的是， 所述阵列基板为 OLED阵列基板， 所述第一薄膜 晶体管为开关管， 所述第二薄膜晶体管为驱动管。
解决本发明技术问题所采用的技术方案是一种显示装置， 其 包括上述阵列基板。 附图说明
图 1为现有的 2T1C像素结构的电路示意图；
图 2为现有阵列基板的一个侧面的结构示意图；
图 3为现有阵列基板的另一个侧面的结构示意图；
图 4为本发明的实施例 1提供的阵列基板的制备方法制备的 阵列基板的一个侧面的结构图；
图 5为本发明的实施例 1提供的阵列基板的制备方法制备的 阵列基板的另一个侧面的结构图； 以及，
图 6为本发明的实施例 1的阵列基板的制备方法的过程示意 图。 其中附图标记为： 101、基底； 102、栅极； 103、有源区； 104、 第一接触过孔； 105、 第二接触过孔； 106、 源极 /漏极； 107、 緩冲 层； 108、 栅极绝缘层； 109、 连接线； 110、 平坦化层； 111、 飩 化层； 第一薄膜晶体管 Ml ; 第二薄膜晶体管 M2。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结 合附图和具体实施方式对本发明作进一步详细描述。
实施例 1 :
将结合图 4、 5、 6对本实施例提供的阵列基板的制备方法进 行描述， 该制备方法具体包括如下步骤：
步骤一、 采用溅射的方法在基底 101上沉积形成緩冲层 107。 该緩冲层 107的材料可以为氧化硅、 氮化硅或者为有机绝缘材料； 其厚度优选在 5~500nm之间。
步骤二、 在形成有緩冲层 107的基底上， 通过构图工艺形成 包括第一薄膜晶体管和第二薄膜晶体管有源区 103的图形。
具体地， 可以采用磁控溅射的方法沉积緩冲层 107薄膜， 之 后在空气氛围下 300°C退火 1小时， 并进而通过构图工艺形成所 需的有源区 103 的图形。 有源层的材料可以选择氧化铟镓锌 ( IGZO ) 、 氧化铟锌 （IZO ) 、 氧化铟锡 （ITO ) 、 氧化铟镓锡 ( InGaSnO ) , 非晶硅、 多晶硅等中任意一种， 当然也可以为其他 半导体材料； 其厚度优选在 5~200nm之间。
步骤三、 在形成有第一薄膜晶体管和第二薄膜晶体管有源区 103的基底上， 形成栅极绝缘层 108, 该栅极绝缘层 108覆盖薄膜 晶体管有源区 103。 优选地， 栅极绝缘层 108的材料为氧化硅、 氮 化硅，以及有机绝缘材料等绝缘材料均可；其厚度优选在 l~300nm 之间。
步骤四、 在形成栅极绝缘层 108的基底上， 通过构图工艺形 成包括第一薄膜晶体管和第二薄膜晶体管栅极 102的图形。 栅极 102的材料可以为钼 （Mo ) 、 铜 (Cu)、 铝 (A1)中的任意一种， 当然 也可以为金属材料、 合金材料以及复合导电材料均可； 其厚度优 选在 l~300nm之间。
步骤五、 在形成第一薄膜晶体管和第二薄膜晶体管栅极 102 的基底上， 形成平坦化层 110 (电学绝缘）。 平坦化层 110的材料 可以为氧化硅或氮化硅， 当然也可以是其他绝缘材料； 其厚度优 选在 5~500謹之间。
步骤六、 通过一次构图工艺形成用于第一薄膜晶体管的源、 漏极 106、 第二薄膜晶体管的源、 漏极 106与其各自的有源层 103 电连接的第二接触过孔 105, 以及用于第二薄膜晶体管的栅极 102 与第一薄膜晶管的源极 106电连接的第一接触过孔 104。
步骤七、 通过构图工艺在第一薄膜晶体管和第二薄膜晶体管 的有源区 103上方的接触过孔 105上形成相应的源、 漏极 106的 图形， 同时在第二薄膜晶体管的栅极 102上方的接触过孔 104上 方， 形成用于连接第二薄膜晶体管的栅极 102和第一薄膜晶体管 的源极 106连接的金属连接线 109。其中， 两个薄膜晶体管的源漏 极 106以及连接线 109的材料均可以采用钼 （Mo ) 、 铜 (Cu)、 铝 (A1)中任意一种， 当然也可以为金属材料、合金材料以及复合导电 材料； 其厚度均为 l~500nm之间。
本实施例中， 由于第一接触过孔 104的深度小于第二接触过 孔 105的深度， 因此， 对于第一接触过孔 104而言， 其刻蚀时间 相对过长。 但是， 第一接触过孔 104刻蚀的承载体为栅极 102, 而 栅极 102采用的金属材料厚度相对较厚， 其可承受刻蚀的能力远 高于有源区 103 的材料的可承受刻蚀的能力。 所以在同时形成第 一接触过孔 104和第二接触过孔 105时， 可以避免在相同的刻蚀 时间下造成栅极 102以及栅极下方的栅极绝缘层 108被刻穿， 从 而导致栅极 102与有源层甚至源、 漏极 106导通， 进而造成阵列 基板漏电的情况， 因此可以提高产品的良品率。
步骤八、 在完成上述步骤的基底 101 上形成飩化层 111 , 飩 化层 111的材料可以为氧化硅或氮化硅；其厚度为 5~500nm之间。 最终得到如图 4、 5所示的阵列基板结构。
经过上述步骤制备的薄膜晶体管中， 栅极设置于有源层和源漏 极之间， 从而， 在形成第一接触过孔 104和第二接触过孔 105时， 栅极 102金属用作长时间刻蚀的承载体， 因此所制备的阵列基板 的抗漏电性能大大提高了。
当然本实施例只是对阵列基板上中两个薄膜晶体管的制备进 行了具体描述， 该阵列基板的像素结构可以为 2T1C型。 同样， 本 实施例也适用于 6T2C型的像素电路、 时序控制电路、扫描驱动电 路、 数据驱动电路、 背板测试电路、 静电防止电路、 以及 TFT背 板的其他功能电路中薄膜晶体管的制备方法， 其制备原理与上述 方法相同， 在此就不——阐述了， 只要是采用上述方法制备的薄 膜晶体管的第一接触过孔 104和第二接触过孔 105的阵列基板均 在本发明的保护范围里。
在本实施例中，薄膜晶体管的源极和漏极在结构上是一样的， 因此源极和漏极在功能上也可以互换。 在实施例 1 的描述中， 以 漏极作为信号输入端， 源极作为信号输出端； 但本发明的保护范 围不限于此， 以源极作为 TFT的信号输入端， 漏极作为信号输出 端的方案也属于本发明的保护范围。 实施例 2:
如图 3所示， 本实施例提供一种阵列基板， 其包括多个像素 单元， 每个像素单元包括第一薄膜晶体管和第二薄膜晶体管， 且 第二薄膜晶体管的栅极 102与第一薄膜晶管源极 106通过第一接 触过孔 104连接， 所述阵列基板是由实施例 1所述的制备方法制 备而成。
具体地， 阵列基板包括： 形成在緩冲层 107上方的第一薄膜 晶体管和第二薄膜晶体管的有源区 103;形成在有源区 103上方的 第一薄膜晶体管和第二薄膜晶体管的栅极绝缘层 108;形成在栅极 绝缘层 108上方并且分别与各自有源区 103相对应的第一薄膜晶 体管和第二薄膜晶体管的栅极 102;形成在栅极 102上方的平坦化 层 110;穿透平坦化层 110和栅极绝缘层 108而连接至各自有源区 103的第一薄膜晶体管和第二薄膜晶体管的源极和漏极 106; 以及 穿透平坦化层 110而连接至第一薄膜晶体管的栅极 102、并且在平 坦化层 110上延伸而连接至第二薄膜晶体管的源极 106的连接线 109。
优选地， 该阵列基板为 OLED阵列基板， 第一薄膜晶体管为 开关管， 第二薄膜晶体管为驱动管， 开关管的源极 106与驱动管 的栅极 102连接。
当然， 在阵列基板中还应包括数据线、 扫描线等其他的已知 结构， 在此不再详细描述。
由于本实施例的阵列基板是采用实施例 1 的方法制备而成， 故该阵列基板的良品率得到大大提高。
在本实施例中，也可以将 TFT的源极作为 TFT的信号输入端， 漏极作为信号输出端。 这样， 开关管的源极将与数据线相连， 用 来接入图像数据信号， 而开关管的漏极则与驱动管的栅极连接， 用以控制通过驱动管的电流大小。 实施例 3:
本实施例提供一种显示装置， 其包括实施例 2所述的阵列基 板， 该显示装置可以为： OLED面板、 手机、 平板电脑、 电视机、 显示器、 笔记本电脑、 数码相框、 导航仪等任何具有显示功能的 产品或部件。
本实施例的显示装置中具有实施例 1 中的阵列基板， 故其良 品率大大提高。
当然， 本实施例的显示装置中还包括其他的常规结构， 如电 源单元、 显示驱动单元等， 在此不再详细描述。 可以理解的是， 以上实施方式仅仅是为了说明本发明的原理 而采用的示例性实施方式， 然而本发明并不局限于此。 对于本领 域内的普通技术人员而言， 在不脱离本发明的精神和实质的情况 下， 可以做出各种变型和改进， 这些变型和改进也视为本发明的 保护范围。

Claims

1. 一种阵列基板的制备方法， 其特征在于， 包括如下步骤： 在基底上通过构图工艺形成包括第一薄膜晶体管和第二薄膜 晶体管的有源区的图形；
在完成上述步骤的基底上形成栅极绝缘层；
在完成上述步骤的基底上， 通过构图工艺形成包括第一薄膜 晶体管的栅极和第二薄膜晶体管的栅极的图形；
在完成上述步骤的基底上形成隔离层；
在完成上述步骤的基底上， 形成用于将第一薄膜晶体管的源 漏极、 第二薄膜晶体管的源漏极与其各自的有源区电连接的第二 接触过孔， 以及形成用于将第一薄膜晶体管的栅极与第二薄膜晶 管的源极电连接并位于第一薄膜晶体管的栅极的上方的第一接触 过孔； 以及
在完成上述步骤的基底上， 通过构图工艺在第一薄膜晶体管 和第二薄膜晶体管的有源区上方的所述第二接触过孔上形成相应 的源、 漏极的图形， 同时在第二薄膜晶体管的栅极上方的第一接 触过孔上方形成用于连接第二薄膜晶体管的栅极和第一薄膜晶体 管的源极的连接线。
2. 根据权利要求 1所述的阵列基板的制备方法，其特征在于， 在基底上通过构图工艺形成包括第一薄膜晶体管和第二薄膜晶体 管的有源区的图形的步骤之前， 还包括：
在基底上形成緩冲层。
3. 根据权利要求 2所述的阵列基板的制备方法，其特征在于， 所述緩冲层的材料为氧化硅或氮化硅， 其厚度在 5~500nm之间。
4. 根据权利要求 1所述的阵列基板的制备方法，其特征在于， 所有所述薄膜晶体管的源极、 漏极以及连接线的材料均采用钼、 铜、 铝中的任意一种； 且厚度均在 l~500nm之间。
5. 根据权利要求 1所述的阵列基板的制备方法，其特征在于， 所有所述薄膜晶体管的有源区的材料为氧化铟镓锌、 氧化铟锌、 氧化铟锡、 氧化铟镓锡、 非晶硅、 多晶硅中任意一种； 其厚度在 5~200nm之间。
6. 根据权利要求 1所述的阵列基板的制备方法，其特征在于， 所有所述薄膜晶体管的栅极材料为钼、 铜、 铝中任意一种。
7. 一种阵列基板， 其特征在于， 包括：
形成在基底上方的第一薄膜晶体管和第二薄膜晶体管的有源 区；
形成在所述有源区上方的第一薄膜晶体管和第二薄膜晶体管 的栅极绝缘层；
形成在所述栅极绝缘层上方并且分别与各自有源区相对应的 第一薄膜晶体管和第二薄膜晶体管的栅极；
形成在所述栅极上方的隔离层；
穿透所述隔离层和所述栅极绝缘层而连接至各自有源区的第 一薄膜晶体管和第二薄膜晶体管的源极和漏极； 以及
穿透所述隔离层而连接至第一薄膜晶体管的栅极、 并且在所 述隔离层上延伸而连接至第二薄膜晶体管的源极的连接线。
8. 根据权利要求 7所述的阵列基板， 其特征在于， 所述阵列 基板为 OLED阵列基板， 所述第一薄膜晶体管为开关管， 所述第 二薄膜晶体管为驱动管。
9. 一种显示装置， 其特征在于， 包括权利要求 7或 8所述的 阵列基板。
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