WO2015098401A1 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- WO2015098401A1 WO2015098401A1 PCT/JP2014/081182 JP2014081182W WO2015098401A1 WO 2015098401 A1 WO2015098401 A1 WO 2015098401A1 JP 2014081182 W JP2014081182 W JP 2014081182W WO 2015098401 A1 WO2015098401 A1 WO 2015098401A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- layer
- concavo
- light
- substrate
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a light emitting element used for a display, a lighting device, and the like.
- an organic light-emitting diode called an organic EL element as a light-emitting element expected as a next-generation display or lighting device.
- an organic EL device holes that have entered through the hole injection layer from the anode and electrons that have entered through the electron injection layer from the cathode are respectively transported to the light emitting layer and recombined on the organic molecules in the light emitting layer. The organic molecules are then excited and light is thereby emitted. Therefore, in order to use the organic EL element as a display device or a lighting device, it is necessary to efficiently extract light from the light emitting layer from the surface of the element. For this purpose, it is necessary to provide a hemispherical lens in the organic EL element.
- the light emitting element provided with such a hemispherical lens has a problem that the angle dependency of chromaticity (color change depending on the viewing angle) increases. all right.
- an object of the present invention is to provide a light-emitting element that has a sufficient luminous efficiency and has a small color change depending on the viewing angle.
- a lens member is disposed on a surface opposite to the one surface of the substrate;
- the light emitting portion and the lens member which are regions sandwiched in the thickness direction of the base material by the first electrode and the second electrode, coincide with each other in plan view,
- the ratio of the light emitting part diameter D2 and the lens member diameter D1 satisfies D2 / D1 ⁇ 0.7
- a light emitting device characterized in that a ratio of the distance d between the opposite surface of the base material and the center of the light emitting portion and the lens member diameter D1 satisfies d / D1 ⁇ 0.25.
- the lens member may be a hemispherical lens.
- the uneven structure layer may be formed of a sol-gel material.
- a coating layer that covers a surface of the uneven structure layer may be provided between the uneven structure layer and the first electrode.
- the base material may be a glass base material.
- the refractive index of the lens member may be 1.4 or more.
- the concavo-convex structure layer may have a concavo-convex pattern having an average concavo-convex pitch of 100 to 1500 nm and a standard deviation of concavo-convex depth of 10 to 100 nm.
- the lens member diameter D1 may be in the range of 1 to 100 mm
- the light emitting portion diameter D2 may be in the range of 0.5 to 70 mm
- the opposite surface of the base material And the distance d between the light emitting unit and the center of the light emitting unit may be within a range of 0.04 to 5 mm.
- the light emitting device of the present invention includes a lens member and a concavo-convex structure layer.
- the ratio r2 between the distance between the center of the part and the lens member diameter satisfies r2 ⁇ 0.25
- the light emitting device of the present invention can efficiently extract the light emitted from the light emitting part to the outside. Therefore, it has high luminous efficiency (current efficiency). Furthermore, the color change (angle dependency of chromaticity) due to the viewing angle is small. Therefore, the light-emitting element of the present invention is extremely effective for various light-emitting devices such as displays and lighting devices.
- FIG. 1A is a schematic view of a light emitting device according to an embodiment
- FIG. 1A is a schematic top view
- FIG. 1B is a schematic cross-sectional view as viewed from the II direction of FIG.
- FIG. 2A is a schematic view of a light emitting device according to another embodiment
- FIG. 2A is a schematic top view
- FIG. 2B is a schematic cross-sectional view as seen from the II direction of FIG.
- FIG. 9 (a) is a schematic top view
- FIG.9 (b) is FIG. It is the schematic sectional drawing seen from the II direction of a).
- FIG. 1A is a schematic top view of the light emitting device 100 of the present embodiment
- FIG. 1B is a schematic cross-sectional view thereof.
- the light emitting element 100 mainly includes a plate-like substrate 40, an uneven structure layer 142, a first electrode 92, an organic layer 94, a second electrode 98, and the lens member 20.
- the concavo-convex structure layer 142, the first electrode 92, the organic layer 94, and the second electrode 98 are formed in this order on one surface of the substrate, and a lens is formed on the surface opposite to the one surface of the substrate.
- a member 20 is arranged.
- the in-plane direction of the base material 40 is the XY direction, and the direction perpendicular thereto, that is, the height direction of the light emitting element 100 (the thickness direction of the base material) is the Z direction.
- the portion of the organic layer 94 sandwiched in the Z direction by the first electrode 92 and the second electrode 98 (the shaded portion in FIG. 1B) emits light when the light emitting element is energized, that is, It becomes the light emission part 94a.
- the light emitting portion 94a and the lens member 20 are provided so that the centers coincide with each other in plan view.
- the centers coincide in plan view means that one light emitting portion 94a overlaps only one lens member 20 when the light emitting element is seen in a plan view from a direction parallel to the optical axis of the lens member (Z direction). In addition, it means that the optical axis position of the lens member 20 and the center position of the light emitting portion 94a substantially coincide with each other in the XY in-plane direction.
- the diameter of the lens member 20 is D1
- the diameter of the light emitting portion 94a is D2
- the surface on which the lens member 20 of the base member 40 is disposed the lens member 20 of the base member 40.
- the ratio r1 between D2 and D1 satisfies r1 ⁇ 0.7, where d is the distance in the Z direction between the adhesive surface of the light emitting portion 94a and the center of the light emitting portion 94a in the Z direction.
- the ratio r2 between d and D1 satisfies r2 ⁇ 0.25.
- r1 and r2 exceed the upper limit, as can be seen from the examples and comparative examples described later, the light extraction efficiency of the light emitting section 94a is lowered, and the light emission efficiency (current efficiency) of the light emitting element is insufficient. May be. From the viewpoint of improving the light extraction efficiency by the lens member, it is desirable that the values of r1 and r2 are closer to 0. Therefore, it is preferable that r1 and r2 are in the ranges of 0 ⁇ r1 ⁇ 0.7 and 0 ⁇ r2 ⁇ 0.25, respectively.
- D1 is preferably in the range of 1 to 100 mm and D2 is preferably in the range of 0.5 to 70 mm from the viewpoints of ease of handling, mechanical strength, and the like.
- d is preferably in the range of 0.04 to 5 mm.
- the substrate 40 is not particularly limited, and a known transparent substrate that can be used for a light emitting element can be appropriately used.
- a substrate made of a transparent inorganic material such as glass; polyester (polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyarylate, etc.), acrylic resin (polymethyl methacrylate, etc.), polycarbonate, polyvinyl chloride, styrene resin ( ABS resin, etc.), cellulose resin (triacetyl cellulose, etc.), polyimide resin (polyimide resin, polyimideamide resin, etc.), a substrate made of a resin such as cycloolefin polymer; SiN, Laminated substrate formed by forming a gas barrier layer made of an inorganic material such as SiO 2 , SiC, SiO X N Y , TiO 2 , Al 2 O 3 and / or a gas barrier layer made of a resin material; a substrate
- the substrate 40 is preferably a substrate having heat resistance, weather resistance against UV light and the like.
- a substrate made of an inorganic material such as glass or a quartz substrate is more preferable.
- the concavo-convex structure layer 142 is formed from an inorganic material such as a sol-gel material
- the base material 40 is formed from an inorganic material, there is little difference in refractive index between the base material 40 and the concavo-convex structure layer, and light emission. This is preferable because unintended refraction and reflection in the element 100 can be prevented.
- a surface treatment or an easy-adhesion layer may be provided on the substrate 40, or a gas barrier layer may be provided for the purpose of preventing the ingress of gases such as moisture and oxygen. Also good.
- the thickness of the base material 40 is desirably thin in order to improve light extraction efficiency, and is preferably in the range of 40 to 3000 ⁇ m. When the thickness of the substrate 40 is less than the lower limit, handling may be difficult, and such a substrate is difficult to obtain.
- the uneven structure layer 142 is a layer having a fine uneven pattern formed on the surface.
- the fine concavo-convex pattern can be an arbitrary pattern such as a lens structure or a structure having functions such as light diffusion and diffraction. Among these, for example, an irregular concavo-convex pattern in which the concavo-convex pitch is not uniform and the direction of the concavo-convex has no directivity is preferable.
- the average pitch of the concavo-convex is preferably in the range of 100 to 1500 nm.
- the average pitch of the irregularities is more preferably in the range of 200 to 1200 nm.
- the average value of the uneven depth distribution is preferably in the range of 20 to 200 nm. If the average value of the depth distribution of the unevenness is less than the lower limit, the required diffraction tends not to occur because the depth is too small with respect to the wavelength of visible light. On the other hand, if the upper limit is exceeded, the diffracted light intensity is uneven.
- the electric field distribution inside the organic layer 94 of the light emitting element 100 is non-uniform, and the electric field concentrates on a specific location, so that leakage tends to occur or the element lifetime tends to be shortened. It is in.
- the average value of the uneven depth distribution is more preferably in the range of 30 to 150 nm.
- the standard deviation of the unevenness depth is preferably in the range of 10 to 100 nm. If the standard deviation of the depth of the unevenness is less than the lower limit, the required diffraction tends not to occur because the depth is too small with respect to the wavelength of visible light. On the other hand, if the upper limit is exceeded, the diffracted light intensity is uneven.
- the electric field distribution inside the organic layer 94 of the light emitting element 100 becomes non-uniform, and the electric field concentrates on a specific location, so that leakage tends to occur or the element life tends to be shortened. is there.
- the standard deviation of the unevenness depth is more preferably in the range of 15 to 75 nm.
- the average pitch of the unevenness means the average value of the unevenness pitch when the unevenness pitch on the surface where the unevenness is formed (adjacent protrusions or adjacent recesses).
- the average value of the pitch of such irregularities is as follows using a scanning probe microscope (for example, product name “E-sweep” manufactured by Hitachi High-Tech Science Co., Ltd.): Measuring method: Cantilever intermittent contact method
- Cantilever material Silicon Cantilever lever width: 40 ⁇ m
- Cantilever tip tip diameter 10 nm
- the average value of the uneven depth distribution and the standard deviation of the uneven depth can be calculated as follows.
- the shape of the surface unevenness is measured by using an inspection probe microscope (for example, product name “E-sweep” manufactured by Hitachi High-Tech Science Co., Ltd.) to measure the unevenness analysis image.
- an arbitrary 3 ⁇ m square (3 ⁇ m long, 3 ⁇ m wide) or 10 ⁇ m square (10 ⁇ m long, 10 ⁇ m wide) measurement is performed under the above-described conditions to obtain the uneven analysis image.
- region are each calculated
- the number of such measurement points varies depending on the type and setting of the measurement device used. For example, the product name “E-sweep” manufactured by Hitachi High-Tech Science Co., Ltd. is used as the measurement device. In this case, 65536 points (256 vertical points ⁇ 256 horizontal points) can be measured (measured at a resolution of 256 ⁇ 256 pixels) in a measurement area of 10 ⁇ m square.
- the measurement point P with the highest height from the surface of a base material is calculated
- a plane including the measurement point P and parallel to the surface of the substrate is defined as a reference plane (horizontal plane), and the depth value from the reference plane (the measurement value P is measured from the height value from the substrate).
- the difference obtained by subtracting the height from the base material at the point) is obtained as the data of the unevenness depth.
- Such unevenness depth data can be obtained by automatically calculating with software or the like in the measuring device depending on the measuring device (for example, product name “E-sweep” manufactured by Hitachi High-Tech Science Co., Ltd.)
- a value obtained by such automatic calculation can be used as the data of the unevenness depth.
- the values that can be calculated by obtaining the arithmetic mean and standard deviation thereof are the average value of the unevenness depth distribution and the standard deviation of the unevenness depth, respectively. adopt.
- the average pitch of the unevenness and the average value of the depth distribution of the unevenness can be obtained through the measurement method as described above regardless of the material of the surface on which the unevenness is formed.
- the Fourier transform image obtained by performing the two-dimensional fast Fourier transform processing on the irregularity analysis image obtained by analyzing the shape of the irregularity on the surface shows a circular or annular pattern.
- it includes such a quasi-periodic structure in which the distribution of the pitch of the projections and depressions has no directivity in the direction of the projections and depressions. Therefore, a substrate having such a quasi-periodic structure is suitable for a diffraction substrate used for a surface light emitting element such as an organic EL element as long as the uneven pitch distribution diffracts visible light.
- An inorganic material can be used as the material of the concavo-convex structure layer 142.
- silica, Ti-based material (TiO 2 or the like), ITO (indium-tin-oxide) -based material, ZnO, ZrO 2 , Al 2 O 3 , ZnS A sol-gel material such as BaTiO 3 or SrTiO 2 may be used.
- silica or TiO 2 is preferable in terms of film formability and refractive index.
- a cured product of the resin composition may be used as the material of the uneven structure layer 142.
- the resin composition include photo-curing resins and thermosetting resins having reactive vinyl groups such as acrylic acid oligomers and methacrylic acid oligomers, moisture curable resins such as 2-cyanoacrylates, and epoxy.
- examples thereof include heat- and chemical-curing (two-component mixed) type resins such as resin based resins, hot-melt type resins such as polyamide, polyester, and polyolefin, and ultraviolet curing type epoxy resins of cationic curing type.
- the resin composition may be various resins such as vinyl ether, oxetane, urethane, melamine, urea, phenol, cross-linked liquid crystal, fluorine and silicone monomers, oligomers and polymers.
- SiO x , SiN x , SiO x N y or the like formed using a polysilazane solution as a raw material may be used as the material of the concavo-convex structure layer 142.
- the thickness of the uneven structure layer 142 is preferably 100 nm to 10 ⁇ m.
- the thickness of the concavo-convex structure layer 142 is less than 100 nm, it becomes difficult to transfer the concavo-convex shape by imprint described later.
- the thickness of the concavo-convex structure layer exceeds 10 ⁇ m, structural defects such as cracks are likely to occur.
- the thickness of the concavo-convex structure layer means the average value of the distance from the bottom surface of the concavo-convex structure layer to the surface on which the concavo-convex pattern is formed.
- an adhesive layer may be provided between the substrate 40 and the uneven structure layer 142.
- the adhesive layer may be a silane coupling agent or the like.
- the silane coupling agent one having an acrylic or methacrylic group can be used.
- KBM-5103 manufactured by Shin-Etsu Chemical
- KBM-503 manufactured by Shin-Etsu Chemical
- Etc. can be used.
- the first electrode 92 can be a transparent electrode having transparency in order to transmit light from the organic layer 94 formed thereon to the substrate 40 side.
- the first electrode 92 is desirably laminated so that the concavo-convex structure formed on the surface of the concavo-convex structure layer 142 is maintained on the surface of the first electrode 92.
- the arrangement and shape of the first electrode 92 in the XY direction are not particularly limited.
- the material of the first electrode for example, indium oxide, zinc oxide, tin oxide, and indium tin oxide (ITO) that is a composite thereof, gold, platinum, silver, and copper are used. Among these, ITO is preferable from the viewpoints of transparency and conductivity.
- the thickness of the first electrode 92 is preferably in the range of 20 to 500 nm.
- the organic layer 94 is formed on the first electrode 92. However, as shown in FIG. 1A, the organic layer 94 may be formed on the concavo-convex structure layer 142 in a portion where the first electrode 92 is not formed.
- the organic layer 94 is not particularly limited as long as it can be used for the organic layer of the organic EL element, and a known organic layer can be appropriately used.
- the surface of the organic layer 94 may be configured such that the shape of the uneven structure layer 142 is maintained, or may be flat without maintaining the shape.
- Such an organic layer 94 may be a laminate of various organic thin films, for example, a laminate comprising a hole transport layer, a light emitting layer, and an electron transport layer.
- phthalocyanine derivatives As a material of the hole transport layer, phthalocyanine derivatives, naphthalocyanine derivatives, porphyrin derivatives, N, N′-bis (3-methylphenyl)-(1,1′-biphenyl) -4,4′-diamine (TPD) ) And 4,4′-bis [N- (naphthyl) -N-phenyl-amino] biphenyl ( ⁇ -NPD), oxazole, oxadiazole, triazole, imidazole, imidazolone, stilbene derivatives, pyrazoline Derivatives, tetrahydroimidazole, polyarylalkanes, butadiene, 4,4 ′, 4 ′′ -tris (N- (3-methylphenyl) N-phenylamino) triphenylamine (m-MTDATA), but are not limited thereto.
- TPD N, N′-bis (3-methylphenyl)-
- the light emitting layer includes holes injected from the first electrode 92 and It is provided to recombine light emitted from the electrons injected from the second electrode 98.
- Materials that can be used for the light emitting layer include anthracene, naphthalene, pyrene, tetracene, coronene, perylene, phthaloperylene, naphthaloperylene, diphenyl.
- a mixture of light-emitting materials selected from the group consisting of a material system that emits light from a spin multiplet, for example, a phosphorescent material that emits phosphorescence, and a site composed of them.
- the phosphorescent light emitting material preferably contains a heavy metal such as iridium, etc.
- the above light emitting material is doped as a guest material in a host material having high carrier mobility
- Light may be emitted using dipole-dipole interaction (Felster mechanism), electron exchange interaction (Dexter mechanism), and materials for the electron transport layer include nitro-substituted fluorene derivatives, diphenylquinone derivatives, Thiopyran dioxide derivatives, heterocyclic tetracarboxylic anhydrides such as naphthaleneperylene, carbodiimide, Distyrylpyrazine derivatives, anthraquinodimethane and anthrone derivatives, oxadiazole derivatives, and organic metal complexes such as aluminum quinolinol complex (Alq3) can be cited.
- Felster mechanism dipole-dipole interaction
- Dexter mechanism electron exchange interaction
- materials for the electron transport layer include nitro-substituted fluorene derivatives, diphenylquinone derivatives, Thiopyran dioxide derivatives, heterocycl
- a thiadiazole derivative in which an oxygen atom of the oxadiazole ring is substituted with a sulfur atom, or a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group can also be used as an electron transport material.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. Note that the hole transport layer or the electron transport layer may also serve as the light emitting layer.
- a metal fluoride such as lithium fluoride (LiF) or Li 2 O 3 is used as an electron injection layer between the organic layer 94 and the second electrode 98.
- a layer formed of a metal oxide, an alkaline earth metal having high activity such as Ca, Ba, or Cs, an organic insulating material, or the like may be provided.
- a triazole derivative, oxadiazole derivative, imidazole derivative, polyarylalkane is used as a hole injection layer between the organic layer 94 and the first electrode 92.
- pyrazoline derivatives and pyrazolone derivatives phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aniline copolymers, or highly conductive You may provide the layer which consists of a molecular oligomer, especially a thiophene oligomer.
- the organic layer 94 is a laminate including a hole transport layer, a light emitting layer, and an electron transport layer
- the thicknesses of the hole transport layer, the light emitting layer, and the electron transport layer are each in the range of 1 to 200 nm, 5 A range of ⁇ 100 nm and a range of 5 ⁇ 200 nm are preferred.
- a region sandwiched in the Z direction by the first electrode 92 and a second electrode 98 described later is a light emitting portion 94a.
- the shape of the light emitting portion 94a is not particularly limited, but may be a shape such as a circle, an ellipse, or a polygon.
- the long diameter of the light emitting portion 94a is the light emitting portion diameter D2
- the light emitting portion 94a is polygonal, the length of the longest diagonal line among the diagonal lines of the light emitting portion 94a. Is the light emitting part diameter D2.
- the light emitting portion diameter D2 is preferably in the range of 0.5 to 70 mm. It is difficult to form the light emitting portion 94a having the diameter D2 less than the lower limit because an advanced patterning technique is required. When the light emitting portion diameter D2 exceeds the upper limit, it may be difficult to uniformly laminate the thin film constituting the organic EL element. Note that the value of the light emitting portion diameter D2 may be appropriately changed according to the value of the lens diameter D1.
- the second electrode 98 is formed on the organic layer 94. However, as shown in FIG. 1A, the second electrode 98 may be formed on the concavo-convex structure layer 142 in a portion where the organic layer 94 is not partially formed. .
- a substance having a small work function can be used as appropriate, and is not particularly limited. For example, a metal electrode such as aluminum, MgAg, MgIn, or AlLi can be used.
- the thickness of the second electrode 98 is preferably in the range of 50 to 500 nm. Further, the second electrode 98 may be laminated so that the concavo-convex structure formed on the surface of the concavo-convex structure layer 142 is maintained.
- the lens member 20 is used to efficiently extract light that repeatedly reflects in the substrate 40 to the outside.
- a lens member 20 is not particularly limited as long as it can be used for extracting light from the organic EL element, and has a structure capable of extracting light to the outside of the element.
- a known optical member can be used as appropriate.
- a lens member 20 for example, a convex lens (hemispherical lens, elliptical lens, etc.), concave lens, Fresnel lens, or the like may be used.
- a commercially available product may be used as appropriate as the lens member 20 for extracting such light to the outside.
- the major axis of the elliptic lens is the lens diameter D1
- the lens diameter D1 is preferably in the range of 1 to 100 mm.
- the lens diameter D1 is less than the lower limit, it is difficult to align the lens member 20 and the light emitting portion 94a so that the centers coincide with each other in plan view.
- the lens diameter D1 exceeds the upper limit, When the thickness is increased and the display is used as a display or a lighting device, the design property is lowered.
- the lens member 20 for taking out such light to the outside those having various sizes and shapes can be appropriately used according to the use, size, configuration, etc. of the optical element. Thickness is not considered important (when thickening is acceptable, it is preferable to use a hemispherical lens, and when thickness is considered important (thin is preferred), it is preferable to use a Fresnel lens.
- the material of the lens member 20 is not particularly limited, and a lens member made of a known material can be used as appropriate.
- a transparent inorganic material such as glass, a polyester resin such as polyethylene terephthalate, or a cellulose-based material.
- Transparent resin materials made of transparent polymers such as resins, acetate resins, polyether sulfone resins, polycarbonate resins, polyamide resins, polyimide resins, polyolefin resins, acrylic resins, etc. are used as appropriate. be able to.
- the lens member 20 is preferably a material having a refractive index higher than that of the substrate 40, more preferably a material having a refractive index of 1.4 or more at a wavelength of 589 nm, and within a range of 1.5 to 2.0.
- a material that is in addition, such a lens member 20 has an adhesive layer so as not to trap air between the base material 40 and the lens member 20 in order to suppress reflection between the base material 40 and the lens member 20. And it is preferable to adhere
- such a lens member 20 may have a protective layer laminated on the surface of the lens member 20 from the viewpoint of improving the friction resistance and scratch resistance of the surface thereof.
- a protective layer a transparent film or a transparent inorganic vapor deposition layer can be used as appropriate.
- a transparent film is not particularly limited, and a known transparent film can be appropriately used.
- polyester resins such as polyethylene terephthalate, cellulose resins, acetate resins, polyethersulfone resins, polycarbonates
- films made of transparent polymers such as resin, polyamide resin, polyimide resin, polyolefin resin, and acrylic resin.
- such a transparent film may be used by forming a pressure-sensitive adhesive layer or an adhesive layer on one surface and bonding them on the surface of the optical member.
- pressure-sensitive adhesives or adhesives include acrylic pressure-sensitive adhesives, ethylene-vinyl acetate copolymers, natural rubber pressure-sensitive adhesives, polyisobutylene, butyl rubber, styrene-butylene-styrene copolymers, and styrene-imprene- Synthetic rubber adhesives such as styrene block copolymers, polyurethane adhesives, and polyester adhesives may be used as appropriate.
- a known metal material capable of forming a transparent inorganic layer by vapor deposition can be used as appropriate, for example, Sn, In, Te, Examples thereof include oxides, nitrides, and sulfides of metals such as Ti, Fe, Co, Zn, Ge, Pb, Cd, Bi, Se, Ga, and Rb.
- a metal material TiO 2 can be preferably used from the viewpoint that deterioration due to oxidation can be sufficiently prevented, and ZnS is preferably used from the viewpoint that low luminance and high luminance can be obtained. Can be used.
- limit especially as a method of forming such an inorganic vapor deposition layer What is necessary is just to manufacture suitably using a well-known physical vapor deposition apparatus.
- the optical element 100 may include a sealing member 101 as shown in FIGS.
- the sealing member 101 is provided to face the base material 40, and forms a space (sealing space) 105 between the base material 40.
- the first electrode 92, the organic layer 94, and the second electrode 98 are located in the sealed space 105.
- the sealing member 101 can be fixed to the substrate 40 using the adhesive layer 103.
- the adhesive layer 103 may be positioned between the base material 40 and the sealing member 101 in the Z direction and may be positioned so as to surround the organic layer 94 in the XY plane direction.
- the sealing member 101 and the adhesive layer 103 prevent moisture and oxygen from entering the sealed space 105. Thereby, deterioration of the organic layer 94 etc.
- the adhesive layer 103 is not in contact with the light emitting portion 94a, and the adhesive layer 103 is formed at a predetermined interval from the light emitting portion 94a. Is preferred.
- the predetermined interval is preferably 1 ⁇ m or more, for example.
- the sealing member 101 may be any material having a high gas barrier property.
- a known gas barrier film used for packaging materials for example, a plastic film deposited with silicon oxide or aluminum oxide, a ceramic layer, and an impact relaxation polymer layer A laminated film, a metal foil laminated with a polymer film, a glass or metal sealing can, an engraved glass, or the like can be used.
- any adhesive generally used for glass, plastic substrates, etc. can be used without limitation, for example, polyvinyl acetate adhesive, acrylic acid oligomer, Photo-curing and thermosetting acrylic adhesives having reactive vinyl groups such as methacrylic acid oligomers, epoxy resin adhesives, moisture-curing adhesives such as 2-cyanoacrylates, etc., ethylene copolymer adhesives , Polyester adhesive, polyimide adhesive, amino resin adhesive made of urea resin or melamine resin, phenol resin adhesive, polyurethane adhesive, reactive (meth) acrylic adhesive, rubber
- an adhesive etc. can be mentioned, As an especially preferable adhesive, an acrylic adhesive, an epoxy adhesive, etc. can be mentioned. Kill. Of these, an epoxy adhesive having a small shrinkage upon curing is preferable.
- Examples of the epoxy adhesive include an epoxy resin composition composed of an epoxy resin and a curing agent, in which a compound containing an epoxy group and a curing agent containing an amine or an acid anhydride are mixed and bonded by a curing reaction. .
- acrylic adhesive examples include an adhesive composed of an acrylic pressure-sensitive adhesive component, an energy ray curable component, and a thermosetting adhesive component. Specific examples thereof include Three Bond Co., Ltd., 3003, 3027B, 3033B, 3042B, etc., and Cemedine Co., Ltd., Cemedine Y600, Y600H, and the like.
- the rubber-based adhesive examples include natural rubber mainly composed of cis-1,4-polyisoprene, synthetic rubber mainly composed of styrene / butadiene rubber (SBR), polyisobutylene, butyl rubber, or the like, or Adhesive elastomer selected from styrene / butadiene / styrene copolymer rubber (SBS), block rubber mainly composed of styrene / isoprene / styrene copolymer rubber (SIS), etc., with liquid or solid molecular weight at room temperature
- an adhesive imparting agent such as rosin resin, terpene resin, petroleum resin, chroman indene resin, which is a thermoplastic resin of amorphous oligomer (a dimer or higher medium molecular weight polymer) of several hundred to about 10,000, And blended with softeners such as mineral oil, liquid polybutene, liquid polyisobutylene, liquid polyacryl
- the vinyl ether adhesive for example, an adhesive made of a homopolymer such as vinyl methyl ether, vinyl ethyl ether, vinyl isobutyl ether or a copolymer (adhesive elastomer) with acrylate can be used. May contain the above-mentioned adhesion promoter, softener and the like.
- silicone-based adhesive for example, the above-mentioned adhesion to a polymer (or adhesive elastomer) having a residual silanol group (SiOH) at the end of a polymer chain represented by high molecular weight polydimethylsiloxane or polydimethyldiphenylsiloxane.
- SiOH silanol group
- the sealed space 105 may be filled with an inert gas or the like.
- an inert gas a rare gas such as He and Ar is preferably used in addition to N 2 , but a rare gas in which He and Ar are mixed is also preferable, and the ratio of the inert gas in the gas is 90 to 100 volume. % Is preferred.
- the sealed space 105 may be filled with a filler such as a solid or liquid resin, glass, fluorine-based inert oil, or a gel material. These fillers are preferably transparent or cloudy.
- a water-absorbing substance may be disposed in the sealed space 105.
- barium oxide can be used as the water-absorbing substance.
- a high-purity barium oxide powder manufactured by Aldrich is attached to the sealing member 101 using a fluororesin semi-permeable membrane (Microtex S-NTF8031Q manufactured by Nitto Denko) with an adhesive. , And can be disposed in the sealed space 105.
- a fluororesin semi-permeable membrane Mocrotex S-NTF8031Q manufactured by Nitto Denko
- water-absorbing substances marketed by Japan Coretex Co., Ltd., Futaba Electronics Co., Ltd., etc. can also be preferably used.
- This manufacturing method generally includes a step of forming a concavo-convex structure layer 142, a first electrode, an organic layer, and a second electrode on the base material 40, and a step of attaching the lens member 20 to the base material 40. .
- each process is demonstrated in order. In the following description, a case where a sol-gel material is used as the material of the uneven structure layer will be described as an example.
- the uneven structure layer 142 is formed on the substrate 40.
- the uneven structure layer 142 can be formed by, for example, a method described below.
- the concavo-convex structure layer 142 is preferably formed of an inorganic material because of its excellent heat resistance.
- the concavo-convex structure layer material silica, Ti-based materials (TiO 2, etc.) and ITO (indium tin oxide) are particularly preferable.
- a sol-gel material such as ZnO, ZrO 2 , Al 2 O 3 , TiO 2 , ZnS, ZrO, BaTiO 3 , or SrTiO 2 can be used.
- a metal alkoxide (silica precursor) sol-gel material is prepared as the concavo-convex structure layer material.
- TMOS tetramethoxysilane
- TEOS tetraethoxysilane
- tetra-i-propoxysilane tetra-n-propoxysilane
- tetra-i-butoxysilane tetra-n-butoxysilane
- tetra-n-butoxysilane tetra-n-butoxysilane
- tetra- Tetraalkoxide monomers represented by tetraalkoxysilane such as sec-butoxysilane, tetra-t-butoxysilane, methyltrimethoxysilane, ethyltrimethoxysilane, propyltrimethoxysilane, isopropyltrimethoxysilane, phenyltrimethoxysilane, Methyltriethoxysilane (MTES), ethyltriethoxysilane, propyltriethoxysilane,
- alkyltrialkoxysilanes or dialkyldialkoxysilanes in which the alkyl group has C4-C18 carbon atoms can also be used.
- Monomers having a vinyl group such as vinyltrimethoxysilane, vinyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxy
- Monomers having an epoxy group such as silane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, monomers having a styryl group such as p-styryltrimethoxysilane, 3-methacryloxypropylmethyl
- Monomers having a methacrylic group such as dimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryl
- Metal alkoxides may be used.
- some or all of the alkyl group and phenyl group of these compounds may be substituted with fluorine.
- metal acetylacetonate, metal carboxylate, oxychloride, chloride, a mixture thereof and the like can be mentioned, but not limited thereto.
- the metal species include, but are not limited to, Ti, Sn, Al, Zn, Zr, In, and a mixture thereof in addition to Si. What mixed suitably the precursor of the said metal oxide can also be used.
- a silane coupling agent having a hydrolyzable group having affinity and reactivity with silica and an organic functional group having water repellency can be used as a precursor of silica.
- silane monomers such as n-octyltriethoxysilane, methyltriethoxysilane, and methyltrimethoxysilane
- vinylsilanes such as vinyltriethoxysilane, vinyltrimethoxysilane, vinyltris (2-methoxyethoxy) silane, vinylmethyldimethoxysilane
- Methacrylic silane such as 3-methacryloxypropyltriethoxysilane, 3-methacryloxypropyltrimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane
- 3-glycyl Epoxy silanes such as Sidoxypropyltriethoxysilane, 3-Mercaptopropyltrimethoxysilane, Mercaptosilanes such as 3-Mercaptopropyltriethoxysilane, 3-Octanoyl
- the mixing ratio thereof can be set to 1: 1, for example, as a molar ratio.
- This sol-gel material produces amorphous silica by performing hydrolysis and polycondensation reactions.
- an acid such as hydrochloric acid or an alkali such as ammonia is added.
- the pH is preferably 4 or less or 10 or more.
- the amount of water to be added can be 1.5 times or more in molar ratio with respect to the metal alkoxide species.
- Solvents for the sol-gel material solution include, for example, alcohols such as methanol, ethanol, isopropyl alcohol (IPA) and butanol, aliphatic hydrocarbons such as hexane, heptane, octane, decane and cyclohexane, benzene, toluene, xylene, mesitylene and the like Aromatic hydrocarbons, ethers such as diethyl ether, tetrahydrofuran and dioxane, ketones such as acetone, methyl ethyl ketone, isophorone and cyclohexanone, butoxyethyl ether, hexyloxyethyl alcohol, methoxy-2-propanol and benzyloxyethanol Ether alcohols, glycols such as ethylene glycol and propylene glycol, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, Glycol ethers such as
- sol-gel material solution polyethylene glycol, polyethylene oxide, hydroxypropyl cellulose, polyvinyl alcohol for viscosity adjustment, alkanolamine such as triethanolamine which is a solution stabilizer, ⁇ diketone such as acetylacetone, ⁇ ketoester, Formamide, dimethylformamide, dioxane and the like can be used.
- alkanolamine such as triethanolamine which is a solution stabilizer
- ⁇ diketone such as acetylacetone, ⁇ ketoester
- Formamide, dimethylformamide, dioxane and the like can be used.
- a material that generates acid or alkali by irradiating light such as energy rays typified by ultraviolet rays such as excimer UV light can be used. By adding such a material, the sol-gel material solution can be cured by irradiation with light.
- ⁇ A solution of the sol-gel material prepared as described above is applied onto a substrate.
- a surface treatment or an easy-adhesion layer may be provided on the base material, or a gas barrier layer may be provided for the purpose of preventing the ingress of gas such as moisture or oxygen.
- Any coating method such as a bar coating method, a spin coating method, a spray coating method, a dip coating method, a die coating method, and an ink jet method can be used as a sol-gel material coating method.
- the bar coating method, the die coating method, and the spin coating method are preferable because the sol-gel material can be applied uniformly and the application can be completed quickly before the sol-gel material gels.
- the substrate After applying the sol-gel material, the substrate may be held in the air or under reduced pressure in order to evaporate the solvent in the coating film. If this holding time is short, the viscosity of the coating film becomes too low to transfer the uneven pattern to the coating film, and if the holding time is too long, the polymerization reaction of the precursor proceeds and the viscosity of the coating film becomes too high. The uneven pattern cannot be transferred to the film. Further, after the application of the sol-gel material, the polymerization reaction of the precursor proceeds with the progress of the evaporation of the solvent, and the physical properties such as the viscosity of the sol-gel material change in a short time.
- the drying time range in which the pattern transfer can be satisfactorily wide is sufficiently wide. It can be adjusted by the amount of solvent used at the time of material preparation (concentration of sol-gel material) or the like.
- the concavo-convex structure layer 142 is formed by transferring the concavo-convex pattern of the mold onto the coating film of the sol-gel material using a mold for concavo-convex pattern transfer.
- a film-like mold or a metal mold can be used as the mold, but it is desirable to use a flexible or flexible film-like mold.
- the mold may be pressed against the coating film of the sol-gel material using a pressing roll. In the roll process using a pressure roll, the time for contact between the mold and the coating film is short compared to the press type.
- the uneven pattern of the mold 50 can be transferred to the coating film 42 on the substrate 40. That is, when the film mold 50 is pressed against the coating film 42 by the pressing roll 122, the film mold 50 is transferred to the surface of the coating film 42 on the substrate 40 while the film mold 50 and the substrate 40 are conveyed synchronously. Cover. At this time, the film-shaped mold 50 and the substrate 40 are brought into close contact with each other by rotating while pressing the pressing roll 122 against the back surface of the film-shaped mold 50 (the surface opposite to the surface on which the concavo-convex pattern is formed). In order to feed the long film-shaped mold 50 toward the pressing roll 122, it is convenient to use the film-shaped mold 50 as it is from the film roll around which the long film-shaped mold 50 is wound.
- the film mold used in the present embodiment is a film or a sheet, and may be a mold having an uneven transfer pattern on the surface.
- silicone resin polyethylene terephthalate (PET), polyethylene terephthalate (PEN), polycarbonate (PC), cycloolefin polymer (COP), polymethyl methacrylate (PMMA), polystyrene (PS), polyimide (PI), polyarylate Formed of an organic material.
- corrugated pattern may be directly formed in the said material, and may be formed in the uneven
- a photocurable resin, a thermosetting resin, or a thermoplastic resin can be used as the concavo-convex forming material.
- the dimensions of the film mold can be appropriately set according to the dimensions of the optical substrate to be mass-produced and the number (lot number) of optical substrates to be continuously manufactured in one manufacturing process.
- a long mold having a length of 10 m or more may be used, and the film-shaped mold wound around the roll may be continuously transferred to a plurality of substrates while being continuously fed from the roll.
- the width of the film mold can be 50 to 3000 mm and the thickness can be 1 to 500 ⁇ m.
- surface treatment or easy adhesion treatment may be performed in order to enhance adhesion.
- the concavo-convex pattern can be formed in an arbitrary shape by an arbitrary method.
- the uneven pattern of the film mold is a lens structure, a structure having functions such as light diffusion and diffraction, a stripe structure composed of dots, lines and spaces, a cylindrical shape, a conical shape, a truncated cone shape, a triangular prism shape, a triangular pyramid shape, a triangular shape It can be an arbitrary pattern such as a pillar structure such as a frustum shape, a quadrangular prism shape, a quadrangular pyramid shape, a quadrangular pyramid shape, a polygonal column shape, a polygonal pyramid shape, a polygonal frustum shape, or a hole structure.
- an irregular concavo-convex pattern in which the concavo-convex pitch is not uniform and the direction of the concavo-convex is not directional is desirable.
- the average pitch of the irregularities can be, for example, in the range of 100 to 1500 nm, and more preferably in the range of 200 to 1200 nm.
- the average value of the uneven depth distribution is preferably in the range of 20 to 200 nm, and more preferably in the range of 30 to 150 nm.
- the standard deviation of the unevenness depth is preferably in the range of 10 to 100 nm, and more preferably in the range of 15 to 75 nm.
- the light scattered and / or diffracted from such a concavo-convex pattern has a relatively broad wavelength band, not light of a single or narrow band wavelength, and the scattered light and / or diffracted light is directed. There is no sex and heads in all directions.
- the coating film may be pre-baked.
- Pre-baking promotes gelation of the coating film, solidifies the pattern, and makes it difficult to collapse during peeling.
- pre-baking it is preferably heated in the atmosphere at a temperature of 40 to 150 ° C. Note that the preliminary firing is not necessarily performed.
- energy represented by ultraviolet rays such as excimer UV light is used instead of pre-baking the coating film.
- a line may be irradiated.
- the mold After the mold is pressed or the sol-gel coating film is pre-baked, the mold is peeled off from the coating film.
- a known peeling method can be employed as a mold peeling method.
- the mold may be peeled off while heating, thereby releasing the gas generated from the coating film and preventing bubbles from being generated in the film.
- the peeling force may be smaller than that of a plate-shaped mold used in a press method, and the mold can be easily peeled off from the coating film without remaining in the mold.
- the coating since the coating is pressed while being heated, the reaction easily proceeds, and the mold is easily peeled off from the coating immediately after pressing.
- the peeling roll 123 is provided on the downstream side of the pressing roll 122, and the film-like mold 50 is rotated by supporting the film-like mold 50 against the coating film 42 by the peeling roll 123. It is possible to maintain the state of being attached to the surface only by the distance between the pressing roll 122 and the peeling roll 123 (a fixed time). Then, by changing the course of the film mold 50 so that the film mold 50 is pulled up above the peeling roll 123 on the downstream side of the peeling roll 123, the film mold 50 is peeled off from the coating film 42 on which the unevenness is formed. It is.
- the mold 50 can be peeled off more easily by peeling while heating at 40 to 150 ° C., for example.
- the coating film 42 may be cured, and thus the concavo-convex structure layer as shown in FIGS. 1 (a), (b) and FIGS. 2 (a), (b). 142 is formed.
- the concavo-convex structure layer made of the sol-gel material can be cured by the main baking. By this firing, the hydroxyl group contained in the silica (amorphous silica) constituting the coating film is eliminated, and the coating film becomes stronger.
- the main baking is preferably performed at a temperature of 200 to 1200 ° C. for about 5 minutes to 6 hours.
- the coating film is cured, and the concavo-convex structure layer 142 having the concavo-convex pattern corresponding to the concavo-convex pattern of the mold is formed.
- the concavo-convex structure layer 142 is made of silica, it becomes amorphous or crystalline, or a mixed state of amorphous and crystalline depending on the firing temperature and firing time.
- energy rays typified by ultraviolet rays such as excimer UV light Can be cured.
- a coating layer may be formed on the surface of the uneven structure layer.
- the coating layer preferably has a film thickness in the range of 25 to 150% of the standard deviation of the unevenness depth of the uneven structure layer. Thereby, when there are foreign matters or defects on the surface of the concavo-convex structure layer, they can be covered, and the leakage current of the manufactured light emitting element 100 can be effectively suppressed.
- the light-emitting element 100 including the coating layer having such a film thickness within the above range has good light extraction efficiency.
- the same material as the sol-gel material that can be used as the material of the uneven structure layer can be used, but the same material as that used as the material of the uneven structure layer should be used. Is desirable.
- the coating material and the uneven structure layer material are the same material, reflection of light at the interface between the cover layer and the uneven structure layer can be suppressed.
- the solvent of the sol-gel material solution used as the coating material the same solvent as that which can be used for the uneven structure layer material can be used.
- the additive of the sol-gel material solution of the coating material the same additive as that used for the above uneven structure layer material can be used.
- the sol-gel material solution of the coating material it is desirable to use a solution further diluted with a solvent than the sol-gel material solution of the uneven structure layer material. Thereby, it becomes easy to form the coating layer with a desired film thickness thinner than the uneven structure layer.
- the coating material may be composed of an inorganic material such as TiO 2 , ZnO, ZnS, ZrO, BaTiO 3 , SrTiO 2 or the like.
- TiO 2 is preferred from the relationship of the film forming property and refractive index.
- the coating layer may be formed using a curable resin material as the coating material.
- a curable resin material for example, a resin such as photo-curing and thermosetting, moisture-curing type, and chemical-curing type (two-component mixing) can be used as in the case of the base material.
- a resin such as photo-curing and thermosetting, moisture-curing type, and chemical-curing type (two-component mixing) can be used as in the case of the base material.
- various resins such as monomers, oligomers and polymers.
- a coating layer using a silane coupling agent as a coating material.
- adhesion between the coating layer and a layer such as an electrode formed thereon can be improved, and resistance in a cleaning process and a high-temperature treatment process in the manufacturing process of the light-emitting element is improved.
- the type of the silane coupling agent used in the coating layer is not particularly limited.
- RSiX 3 R is selected from a vinyl group, a glycidoxy group, an acrylic group, a methacryl group, an amino group, and a mercapto group.
- An organic functional group containing at least one kind, and X is a halogen element or an alkoxyl group can be used.
- the coating material may be an inorganic material or a curable resin material containing an ultraviolet absorbing material.
- the ultraviolet absorbing material has an action of suppressing deterioration of the film by absorbing ultraviolet rays and converting light energy into a harmless form such as heat.
- the ultraviolet absorber conventionally known ones can be used.
- a benzotriazole-based absorbent, a triazine-based absorbent, a salicylic acid derivative-based absorbent, a benzophenone-based absorbent, or the like can be used.
- a coating layer made of silica may be formed by applying a polysilazane solution as a coating material onto a concavo-convex structure layer and converting the formed coating film into a ceramic (silica modification).
- the concavo-convex structure layer 142 may be formed using a polysilazane solution as the concavo-convex structure layer material.
- “Polysilazane” is a polymer having a silicon-nitrogen bond, such as SiO 2 , Si 3 N 4 made of Si—N, Si—H, N—H, etc., and ceramics such as both intermediate solid solutions SiO X N Y. It is a precursor inorganic polymer. More preferred is a compound which is converted to silica by being ceramicized at a relatively low temperature as represented by the following general formula (1) described in JP-A-8-112879.
- R1, R2, and R3 each represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an alkylsilyl group, an alkylamino group, or an alkoxy group.
- perhydropolysilazane also referred to as PHPS
- R 1, R 2 and R 3 are hydrogen atoms, and the hydrogen part bonded to Si is partially an alkyl group or the like.
- Substituted organopolysilazanes are particularly preferred.
- silicon alkoxide-added polysilazane obtained by reacting polysilazane with silicon alkoxide for example, JP-A No. 5-23827
- glycidol-added polysilazane obtained by reacting glycidol for example, JP-A-6-122852
- an alcohol-added polysilazane obtained by reacting an alcohol for example, JP-A-6-240208
- a metal carboxylate-added polysilazane obtained by reacting a metal carboxylate for example, JP-A-6-299118
- an acetylacetonate complex-added polysilazane obtained by reacting a metal-containing acetylacetonate complex for example, JP-A-6-306329
- metal fine particles Pressurized polysilazane (e.g., JP-A-7-196986)
- hydrocarbon solvents such as aliphatic hydrocarbons, alicyclic hydrocarbons and aromatic hydrocarbons, halogenated hydrocarbon solvents, ethers such as aliphatic ethers and alicyclic ethers can be used.
- an amine or metal catalyst may be added.
- the surface of the concavo-convex structure layer (in the case of forming a coating layer, the surface of the coating layer) may be subjected to a hydrophobic treatment.
- a known method may be used for the hydrophobizing treatment.
- the surface is silica, it can be hydrophobized with dimethyldichlorosilane, trimethylalkoxysilane, or the like, or trimethylsilyl such as hexamethyldisilazane.
- a method of hydrophobizing with an agent and silicone oil may be used, or a surface treatment method of metal oxide powder using supercritical carbon dioxide may be used.
- the surface of the concavo-convex structure layer hydrophobic, moisture can be easily removed from the substrate in the optical element manufacturing process described later, thereby preventing the occurrence of defects such as dark spots in the optical element and device deterioration. be able to.
- a gas barrier layer may be provided on the surface of the concavo-convex structure layer or the surface of the coating layer for the purpose of preventing the entry of gas such as moisture and oxygen.
- a method for producing a film mold for transferring a concavo-convex pattern that is preferably used in forming the concavo-convex structure layer will be described.
- a matrix pattern for forming the concave / convex pattern of the mold is prepared.
- the irregular pattern of the matrix is, for example, a method using self-organization (microphase separation) by heating of a block copolymer described in WO2012 / 096368 by the present applicants (hereinafter referred to as “BCP (Block Copolymer” as appropriate).
- BCP solvent annealing method a method using self-assembly of a block copolymer described in WO2013 / 161454 in a solvent atmosphere
- BKL (Buckling) method a photolithography method
- a concave / convex pattern of a matrix can be produced.
- a fine processing method such as a cutting method, an electron beam direct drawing method, a particle beam processing method and an operation probe processing method, and a fine processing method using self-organization of fine particles, or a sandblast method
- any material can be used as the material for forming the pattern, but a styrenic polymer such as polystyrene, a polyalkyl methacrylate such as polymethyl methacrylate, etc.
- a block copolymer consisting of two combinations selected from the group consisting of polyethylene oxide, polybutadiene, polyisoprene, polyvinyl pyridine, and polylactic acid is preferred.
- Etching by irradiating energy rays typified by ultraviolet rays such as excimer UV light, and etching by a dry etching method such as RIE (reactive ion etching) on the uneven pattern obtained by the solvent annealing treatment May be performed. Moreover, you may heat-process with respect to the uneven
- a mold on which the pattern is further transferred can be formed by an electroforming method or the like as follows.
- a seed layer that becomes a conductive layer for electroforming can be formed on a matrix having a pattern by electroless plating, sputtering, vapor deposition, or the like.
- the seed layer is preferably 10 nm or more in order to make the current density uniform in the subsequent electroforming process and to make the thickness of the metal layer deposited by the subsequent electroforming process constant.
- seed layer materials include nickel, copper, gold, silver, platinum, titanium, cobalt, tin, zinc, chromium, gold / cobalt alloy, gold / nickel alloy, boron / nickel alloy, solder, copper / nickel / chromium An alloy, a tin-nickel alloy, a nickel-palladium alloy, a nickel-cobalt-phosphorus alloy, or an alloy thereof can be used.
- a metal layer is deposited on the seed layer by electroforming (electroplating).
- the thickness of the metal layer can be, for example, 10 to 3000 ⁇ m in total including the thickness of the seed layer.
- any of the above metal species that can be used as a seed layer can be used as a material for the metal layer deposited by electroforming.
- the formed metal layer desirably has an appropriate hardness and thickness from the viewpoint of ease of processing such as pressing, peeling and cleaning of the resin layer for forming a subsequent mold.
- the metal layer including the seed layer obtained as described above is peeled off from the matrix having the concavo-convex structure to obtain a metal substrate.
- the peeling method may be physically peeled off, or the material forming the pattern may be removed by dissolving it using an organic solvent that dissolves them, for example, toluene, tetrahydrofuran (THF), chloroform or the like.
- an organic solvent that dissolves them for example, toluene, tetrahydrofuran (THF), chloroform or the like.
- the remaining material components can be removed by washing.
- wet cleaning using a surfactant or the like, or dry cleaning using ultraviolet rays or plasma can be used.
- remaining material components may be adhered and removed using an adhesive or an adhesive. In this way, a metal substrate having a pattern transferred from the matrix is obtained.
- the obtained metal substrate is used as a mold for transferring an uneven pattern, and the uneven structure layer can be formed by transferring the uneven pattern of the mold onto a coating film of a sol-gel material.
- a flexible mold like a film mold can be produced by transferring the concavo-convex structure (pattern) of the metal substrate to a film-shaped support substrate using the obtained metal substrate. For example, after the curable resin is applied to the support substrate, the resin layer is cured while pressing the uneven structure of the metal substrate against the resin layer.
- a support substrate for example, a base material made of an inorganic material such as glass, quartz, silicon, etc .; silicone resin, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), cycloolefin polymer (COP), polymethyl Examples thereof include base materials made of organic materials such as methacrylate (PMMA), polystyrene (PS), polyimide (PI), and polyarylate, and metal materials such as nickel, copper, and aluminum.
- the thickness of the support substrate can be in the range of 1 to 500 ⁇ m.
- the curable resin a resin such as photo-curing and heat-curing, moisture-curing type, chemical-curing type (two-component mixture) can be used. Specifically, for example, epoxy type, acrylic type, methacrylic type, vinyl ether type, oxetane type, urethane type, melamine type, urea type, polyester type, polyolefin type, phenol type, cross-linkable liquid crystal type, fluorine type, silicone type And various resins such as polyamide-based monomers, oligomers, and polymers.
- the thickness of the curable resin is preferably in the range of 0.5 to 500 ⁇ m.
- the thickness is less than the lower limit, the height of the irregularities formed on the surface of the cured resin layer tends to be insufficient, and if the thickness exceeds the upper limit, the influence of the volume change of the resin that occurs during curing increases and the irregular shape is well formed. It may not be possible.
- the method for applying the curable resin examples include spin coating, spray coating, dip coating, dropping, gravure printing, screen printing, letterpress printing, die coating, curtain coating, ink jet, and sputtering.
- Various coating methods such as a method can be employed.
- the conditions for curing the curable resin vary depending on the type of resin used.
- the curing temperature is in the range of room temperature to 250 ° C.
- the curing time is in the range of 0.5 minutes to 3 hours.
- a method of curing by irradiating energy rays such as ultraviolet rays or electron beams may be used.
- the irradiation amount is preferably in the range of 20 mJ / cm 2 to 5 J / cm 2 .
- the metal substrate is removed from the cured resin layer after curing.
- the method for removing the metal substrate is not limited to the mechanical peeling method, and a known method can be adopted. In this way, a mold having a cured resin layer in which irregularities are formed on the support substrate can be obtained.
- the substrate is washed with a brush, and then an aqueous solvent is used. Organic substances and the like are removed with the used alkaline cleaner and organic solvent.
- the first electrode 92 is formed on the uneven structure layer 142, and the uneven structure formed on the surface of the uneven structure layer 142 is formed on the first electrode 92. Is also laminated so that Thus, the first electrode 92 having an uneven pattern is formed.
- the substrate may be exposed to a high temperature of about 300 ° C. during sputtering.
- a photoresist is applied on the deposited first electrode, exposed with a mask pattern for the first electrode, developed with a developer, and then the first electrode is etched with an etchant to form a first of a predetermined pattern.
- An electrode 92 can be obtained. It is desirable that the obtained first electrode 92 is washed with a brush, an organic cleaning agent is removed with an alkaline cleaner using an aqueous solvent and an organic solvent, and then UV ozone treatment is performed.
- an organic layer 94 is laminated on the first electrode 92.
- a known method such as an evaporation method, a sputtering method, a spin coating method, or a die coating method can be appropriately employed.
- the organic layer 94 can be patterned by a known patterning method such as forming a film by placing a mask having a predetermined shape on the substrate.
- a second electrode (metal electrode) 98 is stacked on the organic layer 94.
- the metal electrode 98 can be laminated by employing a known method such as vapor deposition or sputtering.
- the patterning of the metal electrode 98 can be performed by a known patterning method such as forming a film by placing a mask having a predetermined shape on the substrate.
- the lens member 20 is disposed on the surface of the substrate 40 opposite to the surface on which the concavo-convex structure layer 142 is formed (the surface that becomes the light extraction surface after the optical element is formed).
- the lens member 20 can be attached on the base material 40 via an adhesive layer and / or an adhesive layer.
- the lens member 20 is bonded to the surface opposite to the surface on which the uneven structure layer 142 is disposed.
- the lens member 20 can be arranged on the base material 40 by applying an agent or a pressure-sensitive adhesive and arranging the lens member 20 on the applied adhesive or pressure-sensitive adhesive.
- attach the lens member 20 on the base material 40 can be utilized suitably, for example, an acrylic adhesive, ethylene -Synthetic rubber adhesives such as vinyl acetate copolymer, natural rubber adhesive, polyisobutylene, butyl rubber, styrene-butylene-styrene copolymer, styrene-imprene-styrene block copolymer, polyurethane adhesive, polyester Adhesives may be used as appropriate, and commercially available products (Noland UV-adhesive optical adhesives NOA60, NOA61, NOA71, NOA72, NOA81, Toa Gosei UV-3400) may be used.
- Noland UV-adhesive optical adhesives NOA60, NOA61, NOA71, NOA72, NOA81, Toa Gosei UV-3400 may be used.
- the pressure-sensitive adhesive has a refractive index equivalent to the refractive index of the base material 40. It is desirable to use an adhesive.
- the method for applying such a pressure-sensitive adhesive and adhesive is not particularly limited, and a known method can be appropriately employed.
- the pressure-sensitive adhesive and the adhesive may be applied to either the base material 40 or the lens member 20.
- positioning process may be implemented before formation of the uneven structure layer 142, may be implemented after formation of the uneven structure layer 142, or may be implemented after the below-mentioned sealing process. The order of performing these steps is not particularly limited.
- the optical element 100 including the lens member 20 as shown in FIGS. 1A and 1B is formed.
- the sealing member 101 may be attached to seal the stacked body formed in the above-described stacked body forming step.
- the adhesive layer 103 is formed so as to surround the organic layer 94 on the surface of the base material 40 on which the uneven structure layer 142 is disposed.
- the adhesive layer 103 can be formed at a desired position by applying an adhesive using a scanable dispenser and / or a movable stage. Further, the adhesive layer 103 can be formed with a desired line width by controlling the scanning speed and the discharge amount of the dispenser.
- the sealing member 101 is opposed to the base material 40, and is disposed above the concavo-convex structure layer 142, the first electrode 92, the organic layer 94, and the metal electrode 98, and adheres to the base material 40 through the adhesive layer 103.
- the space 105 between the base material 40 and the sealing member 101 is sealed.
- the adhesive layer 103 is formed of a material that is cured by energy ray irradiation, the adhesive layer 103 is cured by irradiating the adhesive layer 103 with energy rays after sealing.
- the adhesive layer 103 can be cured by irradiating light from an ultraviolet region to a visible region obtained from a high pressure mercury lamp or a halogen lamp from the sealing member side or the substrate side.
- the adhesive layer 103 is thermosetting, the adhesive layer 103 can be cured by heating in the range of 50 to 150 ° C., for example.
- the base material 40 and the sealing member 101 are integrated, and the organic layer 94 is disposed in the sealing space 105.
- the sealing member 101 is installed after the adhesive layer 103 is formed on the base material 40 in the above description. However, the space is separated from the base material 40 so as to face the base material 40. Then, after the sealing member 101 is installed, an adhesive layer 103 may be formed by injecting an adhesive into the space.
- the optical element 100 including the sealing member 101 as shown in FIGS. 2A and 2B is manufactured.
- the concavo-convex structure layer 142 is formed using a sol-gel material, but a curable resin material may be used in addition to the above-described inorganic material.
- a curable resin for example, a resin such as photo-curing and thermosetting, moisture-curing type, and chemical-curing type (two-component mixing) can be used. Specifically, epoxy, acrylic, methacrylic, vinyl ether, oxetane, urethane, melamine, urea, polyester, polyolefin, phenol, cross-linkable liquid crystal, fluorine, silicone, polyamide And various resins such as monomers, oligomers and polymers.
- a gas barrier layer may be provided on the surface of the concavo-convex structure layer 142 for the purpose of preventing intrusion of gas such as moisture and oxygen.
- the coating film is cured while pressing a mold having a fine concavo-convex pattern onto the applied curable resin layer.
- the uneven pattern of the mold can be transferred to the curable resin layer.
- the curable resin may be applied after being diluted with an organic solvent.
- an organic solvent used in this case, a solvent capable of dissolving the uncured resin can be selected and used.
- the curable resin can be selected from known solvents such as alcohol solvents such as methanol, ethanol and isopropyl alcohol (IPA), and ketone solvents such as acetone, methyl ethyl ketone and methyl isobutyl ketone (MIBK).
- solvents such as alcohol solvents such as methanol, ethanol and isopropyl alcohol (IPA), and ketone solvents such as acetone, methyl ethyl ketone and methyl isobutyl ketone (MIBK).
- solvents such as alcohol solvents such as methanol, ethanol and isopropyl alcohol (IPA)
- ketone solvents such as acetone, methyl ethyl ketone and methyl isobutyl ketone (MIBK).
- MIBK isobutyl ketone
- the method for applying the curable resin include spin coating, spray coating, dip coating, dropping, gravure printing, screen printing, letterpress printing, die coating, curtain coating
- the curing temperature is in the range of room temperature to 250 ° C.
- the curing time is in the range of 0.5 minutes to 3 hours.
- a method of curing by irradiating energy rays such as ultraviolet rays or electron beams may be used.
- the irradiation amount is preferably in the range of 20 mJ / cm 2 to 5 J / cm 2 .
- the material of the concavo-convex structure layer may be an inorganic material or a curable resin material containing an ultraviolet absorbing material.
- the ultraviolet absorbing material has an action of suppressing deterioration of the film by absorbing ultraviolet rays and converting light energy into a harmless form such as heat.
- As the ultraviolet absorber conventionally known ones can be used. For example, a benzotriazole-based absorbent, a triazine-based absorbent, a salicylic acid derivative-based absorbent, a benzophenone-based absorbent, or the like can be used.
- the adhesive layer 103 bonds the sealing member 101 to the substrate 40 via the concavo-convex structure layer 142, but FIG. As shown in (b), the adhesive layer 103 may be directly formed on the substrate 40. With such an arrangement, the concavo-convex structure layer 142 can be arranged in the sealed space 105. In such an arrangement, moisture and oxygen can be prevented from entering through the concavo-convex structure layer exposed outside the sealing space 105 and the light emitting element from being deteriorated. Further, as shown in FIGS. 9A and 9B, the adhesive layer 103 may be arranged so as to be in direct contact with both the uneven structure layer 142 and the substrate 40.
- the uneven structure layer 142 is disposed so as not to be exposed outside the adhesive layer 103 and the sealing space 105. In such an arrangement, it is possible to prevent deterioration of the light emitting element due to intrusion of moisture and oxygen through the uneven structure layer exposed outside the adhesive layer 103 and the sealing space 105, and the uneven structure.
- the effect of improving the adhesion of the adhesive layer 103 can be obtained by the surface area effect and the hooking effect of the layer 142.
- Example 1 and Comparative Examples 1 to 3 below light emitting elements were produced, and the angle dependency (color change in viewing angle) of the chromaticity of each light emitting element was evaluated.
- Example 1 ⁇ Production of film mold> First, in order to produce a diffraction grating substrate, a film mold having an uneven surface was produced using a BCP solvent annealing method.
- a block copolymer manufactured by Polymer Source comprising the following polystyrene (hereinafter abbreviated as “PS” where appropriate) and polymethyl methacrylate (hereinafter abbreviated as “PMMA” where appropriate) was prepared.
- PS segment Mn 680,000
- PMMA segment Mn 580,000
- Block copolymer Mn 1,260,000
- Volume ratio of PS segment to PMMA segment (PS: PMMA) 57: 43
- Molecular weight distribution (Mw / Mn) 1.28
- Tg of PS segment 107 ° C.
- PMMA segment Tg 134 ° C
- the volume ratio of PS segment and PMMA segment in the block copolymer has a polystyrene density of 1.05 g / cm 3 and a polymethyl methacrylate density of 1.19 g / cm 3.
- Mn number average molecular weight
- Mw weight average molecular weight
- the glass transition point (Tg) of the polymer segment was determined by using a differential scanning calorimeter (manufactured by Perkin-Elmer, product name “DSC7”) at a temperature increase rate of 20 ° C./min in the temperature range of 0 to 200 ° C. Measurement was performed while raising the temperature.
- the solubility parameters of polystyrene and polymethylmethacrylate are 9.0 and 9.3, respectively (see Chemical Handbook, Application, 2nd revised edition).
- the block copolymer solution was filtered through a membrane filter having a pore size of 0.5 ⁇ m to obtain a block copolymer solution.
- a mixed solution of 1 g of KBM-5103 manufactured by Shin-Etsu Silicone Co., Ltd., 1 g of ion exchange water, 0.1 ml of acetic acid and 19 g of isopropyl alcohol was spin-coated on a glass substrate (after 10 seconds at a rotation speed of 500 rpm, followed by For 45 seconds at 800 rpm). It processed at 130 degreeC for 15 minute (s), and the silane coupling process glass was obtained.
- the obtained block copolymer solution was applied on a silane coupling treated glass as a base material with a film thickness of 140 to 160 nm by spin coating.
- the spin coating was performed at a rotational speed of 200 rpm for 10 seconds, and subsequently at 300 rpm for 30 seconds.
- the substrate on which the thin film was formed was left to stand in a desiccator previously filled with chloroform vapor for 24 hours at room temperature, thereby subjecting it to a solvent annealing treatment.
- a screw bottle filled with 100 g of chloroform was installed in the desiccator (capacity 5 L), and the atmosphere in the desiccator was filled with chloroform having a saturated vapor pressure. Unevenness was observed on the surface of the thin film after the solvent annealing treatment, and it was found that the block copolymer constituting the thin film was micro-layer separated.
- a thin nickel layer of about 20 nm was formed as a current seed layer on the surface of the thin film corrugated by the solvent annealing treatment by sputtering.
- the substrate with the thin film was placed in a nickel sulfamate bath, and electrocasting (maximum current density 0.05 A / cm 2 ) was performed at a temperature of 50 ° C. to deposit nickel until the thickness reached 250 ⁇ m.
- the substrate with a thin film was mechanically peeled from the nickel electroformed body thus obtained.
- the nickel electroformed body is immersed in a tetrahydrofuran solvent for 2 hours, and then partially coated on the surface of the electroformed body by repeating the application and curing of an acrylic UV curable resin three times.
- the polymer component that had been removed was removed. Then, it immersed in Nippon CB Chemical's Chemisole 2303, and it wash
- the nickel electroformed body was immersed in HD-2101TH manufactured by Daikin Chemicals Sales Co., Ltd. for about 1 minute, dried, and allowed to stand overnight.
- the nickel electroformed body was immersed in HDTH manufactured by Daikin Chemicals Sales Co., Ltd. and subjected to ultrasonic treatment for about 1 minute.
- a nickel mold subjected to the release treatment was obtained.
- a fluorine-based UV curable resin is applied onto a PET substrate (Toyobo Co., Ltd., Cosmo Shine A-4100), and irradiated with ultraviolet rays at 600 mJ / cm 2 while pressing a nickel mold, the fluorine-based UV curable resin.
- a PET substrate Toyobo Co., Ltd., Cosmo Shine A-4100
- the fluorine-based UV curable resin was cured.
- the nickel mold was peeled off from the cured resin.
- the film mold which consists of a PET board
- TEOS tetraethoxysilane
- DMDES dimethyldiethoxysilane
- S-386 surfactant S-386 (manufactured by Seimi Chemical) was added as an additive, and the mixture was stirred at 23 ° C. and humidity of 45% for 2 hours to obtain a sol-gel material solution of SiO 2 .
- a coating of sol-gel material was formed.
- a doctor blade manufactured by YOSHIMITSU SEIKI was used as a bar coater. This doctor blade was designed to have a coating film thickness of 5 ⁇ m, but an imide tape with a thickness of 35 ⁇ m was attached to the doctor blade so that the coating film thickness was adjusted to 40 ⁇ m.
- the film mold prepared as described above on the coating film was coated on a glass plate using a pressing roll heated to 80 ° C. Rotating movement while pressing against. After the pressing of the coating film was completed, the film mold was peeled off, and then main baking was performed by heating at 300 ° C. for 60 minutes using an oven. Thus, a concavo-convex structure layer onto which the concavo-convex pattern of the film mold was transferred was formed on the glass substrate.
- the pressing roll was a roll provided with a heater inside and coated with heat-resistant silicone having an outer periphery of 4 mm thick, and had a roll diameter ⁇ of 50 mm and an axial length of 350 mm.
- ⁇ Average depth of irregularities> A measurement area of 10 ⁇ m square (vertical 10 ⁇ m, horizontal 10 ⁇ m) was measured at an arbitrary position of the uneven structure layer, and an unevenness analysis image was obtained as described above. In such an unevenness analysis image, 100 or more distances in the depth direction from arbitrary concave portions and convex portions are measured, and the average is calculated to obtain the average depth of the unevenness. From the analysis image obtained in this example, the average depth of the concavo-convex pattern of the concavo-convex structure layer was 70 nm.
- ⁇ Fourier transform image of unevenness analysis image> A measurement area of an arbitrary 10 ⁇ m square (vertical 10 ⁇ m, horizontal 10 ⁇ m) of the concavo-convex structure layer was measured, and the concavo-convex analysis image was obtained as described above.
- the obtained unevenness analysis image was subjected to flat processing including primary inclination correction, and then subjected to two-dimensional fast Fourier transform processing to obtain a Fourier transform image.
- the Fourier transform image shows a circular pattern whose center is the origin where the absolute value of the wave number is 0 ⁇ m ⁇ 1 , and the circular pattern falls within the range where the absolute value of the wave number is 10 ⁇ m ⁇ 1 or less. It was confirmed to exist in the area.
- the circular pattern of the Fourier transform image is a pattern that is observed when bright spots are gathered in the Fourier transform image.
- “Circular” as used herein means that the pattern of bright spots appears to be almost circular, and is a concept that includes a part of the outer shape that appears to be convex or concave. .
- a pattern in which bright spots are gathered may appear to be almost circular, and this case is expressed as “annular”.
- annular includes those in which the outer circle of the ring and the inner circle appear to be substantially circular, and the outer circle of the ring and a part of the outer shape of the inner circle are convex or concave. It is a concept including what appears to be.
- the circular or annular pattern has an absolute value of wave number of 10 ⁇ m ⁇ 1 or less (more preferably in the range of 0.667 to 10 ⁇ m ⁇ 1 , more preferably in the range of 0.833 to 5 ⁇ m ⁇ 1 ).
- “Is present in the region” means that 30% or more (more preferably 50% or more, still more preferably 80% or more, particularly preferably 90% or more) of the luminescent spots constituting the Fourier transform image. Is in a region where the absolute value of the wave number is 10 ⁇ m ⁇ 1 or less (more preferably in the range of 0.667 to 10 ⁇ m ⁇ 1 , more preferably in the range of 0.833 to 5 ⁇ m ⁇ 1 ).
- the concavo-convex structure itself has neither pitch distribution nor directivity, the Fourier transform image also appears as a random pattern (no pattern), but the concavo-convex structure is isotropic in the XY direction as a whole, but the pitch distribution is In some cases, a circular or annular Fourier transform image appears. Further, when the concavo-convex structure has a single pitch, the ring appearing in the Fourier transform image tends to be sharp.
- the two-dimensional fast Fourier transform processing of the unevenness analysis image can be easily performed by electronic image processing using a computer equipped with two-dimensional fast Fourier transform processing software.
- ⁇ Average pitch of unevenness> A measurement area of an arbitrary 10 ⁇ m square (vertical 10 ⁇ m, horizontal 10 ⁇ m) of the concavo-convex structure layer was measured, and the concavo-convex analysis image was obtained as described above. In such an unevenness analysis image, 100 or more points were measured at intervals between arbitrary adjacent convex portions or adjacent concave portions, and the average was calculated as the average pitch of the unevenness. From the analysis image obtained in this example, the average pitch of the concavo-convex pattern of the concavo-convex structure layer was 900 nm.
- ⁇ Average value of uneven depth distribution> A measurement area of an arbitrary 10 ⁇ m square (vertical 10 ⁇ m, horizontal 10 ⁇ m) of the uneven structure layer was measured to obtain an unevenness analysis image. In that case, the data of the uneven
- the measurement point P having the highest height from the surface of the substrate among all measurement points was obtained.
- a plane including the measurement point P and parallel to the surface of the substrate is defined as a reference plane (horizontal plane), and a depth value from the reference plane (a height value from the substrate at the measurement point P is determined at each measurement point).
- the difference obtained by subtracting the height from the substrate was determined as the data of the unevenness depth.
- Such unevenness depth data can be automatically calculated by the software in E-sweep, and the automatically calculated value can be obtained as the unevenness depth data. Available as Thus, after calculating
- the average value (m) of the uneven depth distribution of the uneven structure layer obtained in this example was 70 nm.
- N denotes the total number of measurement points (total number of pixels)
- x i denotes the data of the i-th uneven depth measuring points
- m represents the average value of uneven depth distribution.
- the standard deviation ( ⁇ 1) of the concavo-convex depth of the concavo-convex structure layer was 48.1 nm.
- ITO is deposited on the concavo-convex structure layer to a thickness of 120 nm by a sputtering method, coated with a photoresist, exposed with a mask pattern for a transparent electrode (first electrode), developed with a developer, and then ITO Was etched with an etching solution to obtain a transparent electrode having a pattern as shown in the schematic top view of FIG.
- the obtained transparent electrode was washed with a brush, organic substances and the like were removed with an alkaline detergent and an organic solvent, and then subjected to UV ozone treatment.
- a lithium fluoride layer thickness: 1.5 nm
- a metal electrode aluminum, thickness: 50 nm
- a patterning mask was disposed on the substrate to form an organic layer and a metal electrode having a predetermined shape.
- the light emitting portion of the light emitting device of this example was circular and the diameter D2 was 4.2 mm.
- the hemispherical lens manufactured by Edmund
- the hemispherical lens was arranged so that the center of the light emitting portion coincided with the plan view.
- 1A and 1B schematically show the plane and cross-sectional structure of the manufactured light-emitting element.
- Comparative Example 1 For comparison with Example 1, a light emitting device was produced in the same manner as in Example 1 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate. A cross-sectional structure of the manufactured light-emitting element is schematically shown in FIG.
- Comparative Example 2 For comparison with Example 1, a light emitting device was produced in the same manner as in Example 1 except that the concavo-convex structure layer was not formed, the transparent electrode was directly formed on the substrate, and the hemispherical lens was not attached. .
- FIG. 5 schematically shows a cross-sectional structure of the manufactured light-emitting element.
- the distance ( ⁇ c) between the coordinate point of the 'chromaticity diagram and the coordinate point of the u'v' chromaticity diagram at each measurement position of ⁇ -80 ° to 80 ° was obtained. It means that the smaller the maximum value of ⁇ c, the smaller the angle dependency of the chromaticity of the light emitting element.
- the obtained numerical range of ⁇ c is shown in the table of FIG.
- ⁇ c of the light emitting element of Comparative Example 2 that does not include either the uneven structure layer or the hemispherical lens is less than 0.011
- ⁇ c of the light emitting element of Comparative Example 1 that does not include the uneven structure layer and includes only the hemispherical lens Is less than 0.022, and it was found that the angle dependency of chromaticity is increased by providing a hemispherical lens in the light emitting element.
- ⁇ c of the light-emitting element of Example 1 including both the uneven structure layer and the hemispherical lens is less than 0.012, the chromaticity angle caused by the hemispherical lens is provided by providing the light-emitting element with the uneven structure layer.
- the light emitting element of Comparative Example 3 had a large value of ⁇ c of less than 0.025, despite having both the concavo-convex structure layer and the hemispherical lens. Since the light-emitting element of Comparative Example 3 has different values of r1 and r2 from the light-emitting element of Example 1, in order to manufacture a light-emitting element having a small chromaticity angle dependency, that is, a small ⁇ c value, It was found that the values of r1 and r2 of the element need to be set to appropriate values.
- Example 2 A light emitting device was produced in the same manner as in Example 1 except that the mask used for patterning the transparent electrode and the metal electrode was changed to change the light emitting portion diameter D2 to 3.0 mm.
- the light emitting element had an r1 value of 0.30 and an r2 value of 0.07.
- Comparative Example 4 For comparison with Example 2, a light emitting device was produced in the same manner as in Example 2 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate. A cross-sectional structure of the manufactured light-emitting element is schematically shown in FIG.
- Comparative Example 5 For comparison with Example 2, a light emitting device was produced in the same manner as in Example 2 except that the uneven structure layer was not formed, a transparent electrode was formed directly on the substrate, and a hemispherical lens was not attached. A cross-sectional structure of the manufactured light-emitting element is schematically shown in FIG.
- Example 3 A light emitting device was produced in the same manner as in Example 2 except that the mask used for patterning the transparent electrode and the metal electrode was changed to change the light emitting portion diameter D2 to 5.2 mm.
- the light emitting element had an r1 value of 0.52 and an r2 value of 0.07.
- Comparative Example 6 For comparison with Example 3, a light emitting device was produced in the same manner as in Example 3 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate.
- Comparative Example 7 For comparison with Example 3, a light emitting device was produced in the same manner as in Example 3 except that the uneven structure layer was not formed, the transparent electrode was directly formed on the substrate, and the hemispherical lens was not attached. .
- Example 4 A light emitting device was produced in the same manner as in Example 2 except that the mask used for patterning the transparent electrode and the metal electrode was changed to change the light emitting portion diameter D2 to 6.7 mm.
- the light emitting element had an r1 value of 0.67 and an r2 value of 0.07.
- Comparative Example 8 For comparison with Example 4, a light emitting device was produced in the same manner as in Example 4 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate.
- Comparative Example 9 For comparison with Example 4, a light emitting device was produced in the same manner as in Example 4 except that the uneven structure layer was not formed, a transparent electrode was directly formed on the substrate, and a hemispherical lens was not attached. .
- Comparative Example 10 A light emitting device was produced in the same manner as in Example 2 except that the mask used for patterning the transparent electrode and the metal electrode was changed to change the light emitting portion diameter D2 to 7.9 mm.
- the light emitting element had an r1 value of 0.79 and an r2 value of 0.07.
- Comparative Example 11 For comparison with Comparative Example 10, a light emitting device was produced in the same manner as Comparative Example 10 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate.
- Comparative Example 12 For comparison with Comparative Example 10, a light emitting device was produced in the same manner as Comparative Example 10 except that the uneven structure layer was not formed, the transparent electrode was formed directly on the substrate, and the hemispherical lens was not attached. .
- Example 5 Instead of using a non-alkali glass with a thickness of 0.7 mm as a base material, a refractive liquid (manufactured by Shimadzu Device Co., Ltd.) is used as an adhesive, and the two bases of the above non-alkali glass are used as a base material. Otherwise, a light emitting device was fabricated in the same manner as in Example 2. The thickness of the base material in this example was 1.4 mm. The light emitting element had an r1 value of 0.30 and an r2 value of 0.14.
- a refractive liquid manufactured by Shimadzu Device Co., Ltd.
- Comparative Example 13 For comparison with Example 5, a light emitting device was produced in the same manner as in Example 5 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate.
- Comparative Example 14 For comparison with Example 5, a light emitting device was produced in the same manner as in Example 5 except that the uneven structure layer was not formed, a transparent electrode was formed directly on the substrate, and a hemispherical lens was not attached.
- Example 6 Instead of using a non-alkali glass with a thickness of 0.7 mm as a base material, using a refractive liquid (manufactured by Shimadzu Device Co.) as an adhesive, using the above-mentioned three bases of non-alkali glass laminated and bonded as a base material, Otherwise, a light emitting device was fabricated in the same manner as in Example 2.
- the thickness of the base material in the present example was 2.1 mm.
- the light emitting element had an r1 value of 0.30 and an r2 value of 0.21.
- Comparative Example 15 For comparison with Example 6, a light emitting device was produced in the same manner as in Example 6 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate.
- Comparative Example 16 For comparison with Example 6, a light emitting device was produced in the same manner as in Example 6 except that the uneven structure layer was not formed, the transparent electrode was formed directly on the substrate, and the hemispherical lens was not attached. .
- Comparative Example 17 Instead of using a non-alkali glass with a thickness of 0.7 mm as a base material, a refractive liquid (manufactured by Shimadzu Device Co., Ltd.) is used as an adhesive, and the above-mentioned non-alkali glass is laminated and adhered as a base material. Otherwise, a light emitting device was fabricated in the same manner as in Example 2. The thickness of the base material in the present example was 2.8 mm. The light emitting element had an r1 value of 0.30 and an r2 value of 0.28.
- a refractive liquid manufactured by Shimadzu Device Co., Ltd.
- Comparative Example 18 In order to compare with Comparative Example 17, a light emitting device was produced in the same manner as Comparative Example 17 except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate.
- Comparative Example 19 For comparison with Comparative Example 17, a light emitting device was produced in the same manner as Comparative Example 17 except that the uneven structure layer was not formed, the transparent electrode was formed directly on the substrate, and the hemispherical lens was not attached. .
- Comparative Example 20 Instead of using a non-alkali glass with a thickness of 0.7 mm as a base material, a refractive liquid (manufactured by Shimadzu Device Co., Ltd.) is used as an adhesive, and the above-mentioned five non-alkali glass layers are used as a base material. Otherwise, a light emitting device was fabricated in the same manner as in Example 2. The thickness of the base material in this example was 3.5 mm. The light emitting element had an r1 value of 0.30 and an r2 value of 0.35.
- Comparative Example 21 For comparison with Comparative Example 20, a light emitting device was produced in the same manner as Comparative Example 20, except that the uneven structure layer was not formed and a transparent electrode was formed directly on the substrate.
- Comparative Example 22 For comparison with Comparative Example 20, a light emitting device was produced in the same manner as in Comparative Example 20, except that the uneven structure layer was not formed, the transparent electrode was formed directly on the substrate, and the hemispherical lens was not attached. .
- Example 5 and Comparative Example 13 are for Comparative Example 14, Example 6 and Comparative Example 15 are for Comparative Example 16, Comparative Examples 17 and 18 are for Comparative Example 19, and Comparative Examples 20 and 21 are.
- the current efficiency was measured by the following method. A voltage is applied to the organic EL element, and the applied voltage V and the current I flowing through the organic EL element are applied by an application measuring instrument (manufactured by ADC Corporation, R6244), and the total luminous flux L is all made by Spectra Corp. It measured with the light beam measuring apparatus.
- S is the light emitting area of the element.
- the value of the luminance L ′ was converted by the following calculation formula (F2) assuming that the light distribution characteristics of the organic EL element follow the Lambert rule.
- L ′ L / ⁇ / S (F2)
- the calculation result of the current efficiency magnification is shown in the table of FIG. First, the influence of the value of r1 on the current efficiency is analyzed. Comparing the calculation results of the current efficiency magnifications of the light emitting elements of Examples 2 to 4 and Comparative Examples 4, 6, 8, 10, and 11 in which the value of r2 is equal to 0.07 and the value of r1 is different, r1 is r1 In the light-emitting elements of Examples 2 to 4 and Comparative Examples 4, 6, and 8 that are within the range of ⁇ 0.7, the light-emitting elements of Comparative Examples 4, 6, and 8 that are provided with a hemispherical lens but are not provided with an uneven structure layer, The current efficiency was 1.92, 1.98, and 1.86 times that of the light-emitting elements of Comparative Examples 5, 7, and 9 that were not provided with either a hemispherical lens or an uneven structure layer.
- the light emitting elements of Examples 2 to 4 having both the concavo-convex structure layer have current efficiency of 2.19, 2.13, and 2.13 times that of the light emitting elements of Comparative Examples 5, 7, and 9, respectively. , Both exceeded twice.
- the light-emitting elements of Comparative Examples 10 and 11 in which r1 exceeds 0.7 the light-emitting element of Comparative Example 10 that includes a hemispherical lens but does not include an uneven structure layer does not include either a hemispherical lens or an uneven structure layer.
- the light emitting element of Comparative Example 10 which has a current efficiency of 1.72 times that of the light emitting element of Comparative Example 12 and includes both the hemispherical lens and the concavo-convex structure layer is 1.91 compared to the light emitting element of Comparative Example 12.
- the current efficiency was doubled. From the above, by providing the concavo-convex structure layer and the hemispherical lens in the optical element so that r1 is in the range of r1 ⁇ 0.7, the optical element having neither the concavo-convex structure layer nor the hemispherical lens is obtained. On the other hand, it has been found that the current efficiency of the light emitting element can be improved more than twice.
- the light-emitting elements of Examples 2, 5, and 6 including both the hemispherical lens and the concavo-convex structure layer are 2.19, 2.03, and 2.09, respectively, with respect to the light-emitting elements of Comparative Examples 5, 14, and 16, respectively.
- the current efficiency was 2.00 times.
- the light-emitting elements of Comparative Examples 17, 18, 20, and 21 in which r1 exceeds 0.25 the light-emitting elements of Comparative Examples 18 and 21 that are provided with a hemispherical lens but are not provided with a concavo-convex structure layer include a hemispherical lens and a concavo-convex structure.
- the light-emitting elements of Comparative Examples 17 and 20 having current efficiency of 1.39, 1, and 27 times that of the light-emitting elements of Comparative Examples 19 and 22 that do not include any of the layers, and both the hemispherical lens and the concavo-convex structure layer. Were 1.69 and 1.58 times the current efficiency of the light emitting elements of Comparative Examples 19 and 22, respectively. From the above, by providing the concavo-convex structure layer and the hemispherical lens in the optical element so that r2 falls within the range of r2 ⁇ 0.25, the optical element having neither the concavo-convex structure layer nor the hemispherical lens is obtained. On the other hand, it has been found that the current efficiency of the light emitting element can be improved more than twice.
- the optical element of the present invention is not limited to the above-described examples, and can be appropriately modified within the scope of the technical idea described in the claims.
- the light-emitting element described in the above embodiment is a bottom emission type organic EL element, but the light-emitting element of the present invention is not limited to this.
- the light emitting device of the present invention may be, for example, a top emission type organic EL device.
- the light-emitting element of the present invention includes a concavo-convex structure layer that functions as a diffraction grating and a lens member, has a sufficient light-emitting efficiency, and has a small color change due to a viewing angle.
- the light-emitting element of the present invention since the light-emitting element of the present invention has excellent light-emitting characteristics, it is extremely useful for various light-emitting devices such as displays and lighting devices, and contributes to energy saving.
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Abstract
Description
基材の一方の面上に凹凸構造層、第1電極、有機層、及び第2電極をこの順序で備え、
レンズ部材が前記基材の前記一方の面の反対側の面に配置されており、
前記有機層のうち前記第1電極及び前記第2電極によって前記基材の厚み方向に挟まれた領域である発光部と前記レンズ部材は、平面視上中心が一致し、
前記発光部径D2と前記レンズ部材径D1の比が、D2/D1≦0.7を満たし、
前記基材の前記反対側の面と前記発光部の中心との間の距離dと前記レンズ部材径D1の比が、d/D1≦0.25を満たすことを特徴とする発光素子が提供される。
基材40としては特に制限されず、発光素子に用いることが可能な公知の透明基板を適宜利用することができる。例えば、ガラス等の透明無機材料からなる基板;ポリエステル(ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエチレンナフタレート、ポリアリレート等)、アクリル系樹脂(ポリメチルメタクリレート等)、ポリカーボネート、ポリ塩化ビニル、スチレン系樹脂(ABS樹脂等)、セルロース系樹脂(トリアセチルセルロース等)、ポリイミド系樹脂(ポリイミド樹脂、ポリイミドアミド樹脂等)、シクロオレフィンポリマー等の樹脂からなる基板;これらの樹脂からなる基板の表面に、SiN、SiO2、SiC、SiOXNY、TiO2、Al2O3等の無機物からなるガスバリア層及び/又は樹脂材料からなるガスバリア層を形成してなる積層基板;これらの樹脂からなる基板及びこれらのガスバリア層を交互に積層してなる積層基板などを利用することができる。発光素子の用途からすれば、基材40は耐熱性、UV光等に対する耐候性を備える基材が望ましい。これらの点で、ガラスや石英基板等の無機材料からなる基材がより好ましい。特に、凹凸構造層142がゾルゲル材料などの無機材料から形成される場合には、基材40を無機材料から形成すると、基材40と凹凸構造層との間で屈折率の差が少なく、発光素子100内での意図しない屈折や反射を防止することができるので好ましい。基材40上には密着性を向上させるために、表面処理や易接着層を設けるなどをしてもよいし、水分や酸素等の気体の浸入を防ぐ目的で、ガスバリア層を設けるなどしてもよい。基材40の厚みは、光取り出し効率の向上のためには薄いことが望ましく、40~3000μmの範囲内であることが好ましい。基材40の厚みが前記下限未満である場合、取扱いが困難になることがあり、またその様な基材は入手が困難である。
凹凸構造層142は、微細な凹凸パターンが表面に形成された層である。微細な凹凸パターンは、レンズ構造や光拡散や回折等の機能を有する構造など、任意のパターンにし得る。中でも、例えば、凹凸のピッチが均一ではなく、凹凸の向きに指向性がないような不規則な凹凸パターンが好ましい。凹凸構造層142が回折格子として働くために、凹凸の平均ピッチは、100~1500nmの範囲内であることが好ましい。凹凸の平均ピッチが前記下限未満では、可視光の波長に対してピッチが小さくなりすぎるため、凹凸による光の回折が生じなくなる傾向にあり、他方、上限を超えると、回折角が小さくなり、回折格子としての機能が失われてしまう傾向にある。凹凸の平均ピッチは200~1200nmの範囲内であることがより好ましい。凹凸の深さ分布の平均値は、20~200nmの範囲内であることが好ましい。凹凸の深さ分布の平均値が前記下限未満では、可視光の波長に対して深さが小さすぎるために必要な回折が生じなくなる傾向にあり、他方、上限を超えると、回折光強度にむらが生じ、この結果、例えば、発光素子100の有機層94内部の電界分布が不均一となって特定の箇所に電界が集中することによってリークが生じ易くなったり、素子寿命が短くなったりする傾向にある。凹凸の深さ分布の平均値は30~150nmの範囲内であることがより好ましい。凹凸の深さの標準偏差は、10~100nmの範囲内であることが好ましい。凹凸の深さの標準偏差が前記下限未満では、可視光の波長に対して深さが小さすぎるために必要な回折が生じなくなる傾向にあり、他方、上限を超えると、回折光強度にむらが生じ、この結果、例えば、発光素子100の有機層94内部の電界分布が不均一となって特定の箇所に電界が集中することによってリークが生じ易くなったり、素子寿命が短くなったりする傾向にある。凹凸の深さの標準偏差は、15~75nmの範囲内であることがより好ましい。
測定方式:カンチレバー断続的接触方式
カンチレバーの材質:シリコン
カンチレバーのレバー幅:40μm
カンチレバーのチップ先端の直径:10nm
により、表面の凹凸を解析して凹凸解析画像を測定した後、かかる凹凸解析画像中における、任意の隣り合う凸部同士又は隣り合う凹部同士の間隔を100点以上測定し、その算術平均を求めることにより算出できる。
第1電極92は、その上に形成される有機層94からの光を基材40側に透過させるために透過性を有する透明電極にし得る。また、第1電極92は、凹凸構造層142の表面に形成されている凹凸構造が第1電極92の表面に維持されるようにして積層されることが望ましい。なお、第1電極92のXY方向の配置及び形状は特に限定されない。
有機層94は、第1電極92上に形成されるが、図1(a)に示すように、第1電極92が形成されていない部分においては凹凸構造層142上に形成されてもよい。有機層94は、有機EL素子の有機層に用いることが可能なものであれば特に制限されず、公知の有機層を適宜利用することができる。また、有機層94の表面は、凹凸構造層142の形状が維持されるようにしてもよいし、形状を維持せずに平坦であってもよい。このような有機層94は、種々の有機薄膜の積層体であってもよく、例えば、正孔輸送層、発光層、及び電子輸送層からなる積層体であってもよい。ここで、正孔輸送層の材料としては、フタロシアニン誘導体、ナフタロシアニン誘導体、ポルフィリン誘導体、N,N’-ビス(3ーメチルフェニル)-(1,1’-ビフェニル)-4,4’-ジアミン(TPD)や4,4’-ビス[N-(ナフチル)-N-フェニル-アミノ]ビフェニル(α-NPD)等の芳香族ジアミン化合物、オキサゾール、オキサジアゾール、トリアゾール、イミダゾール、イミダゾロン、スチルベン誘導体、ピラゾリン誘導体、テトラヒドロイミダゾール、ポリアリールアルカン、ブタジエン、4,4’,4”-トリス(N-(3-メチルフェニル)N-フェニルアミノ)トリフェニルアミン(m-MTDATA)が挙げられるが、これらに限定されるものではない。また、発光層は、第1電極92から注入された正孔と第2電極98から注入された電子とを再結合させて発光させるために設けられている。発光層に使用できる材料としては、アントラセン、ナフタレン、ピレン、テトラセン、コロネン、ペリレン、フタロペリレン、ナフタロペリレン、ジフェニルブタジエン、テトラフェニルブタジエン、クマリン、オキサジアゾール、ビスベンゾキサゾリン、ビススチリル、シクロペンタジエン、アルミニウムキノリノール錯体(Alq3)などの有機金属錯体、トリ-(p-ターフェニル-4-イル)アミン、1-アリール-2,5-ジ(2-チエニル)ピロール誘導体、ピラン、キナクリドン、ルブレン、ジスチリルベンゼン誘導体、ジスチリルアリーレン誘導体、ジスチリルアミン誘導体及び各種蛍光色素等を用いることができる。またこれらの化合物のうちから選択される発光材料を適宜混合して用いることも好ましい。また、スピン多重項からの発光を示す材料系、例えば燐光発光を生じる燐光発光材料、およびそれらからなる部位を分子内の一部に有する化合物も好適に用いることができる。なお、前記燐光発光材料はイリジウムなどの重金属を含むことが好ましい。上述した発光材料をキャリア移動度の高いホスト材料中にゲスト材料としてドーピングして、双極子-双極子相互作用(フェルスター機構)、電子交換相互作用(デクスター機構)を利用して発光させても良い。また、電子輸送層の材料としては、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、ナフタレンペリレンなどの複素環テトラカルボン酸無水物、カルボジイミド、フルオレニリデンメタン誘導体、アントラキノジメタン及びアントロン誘導体、オキサジアゾール誘導体、アルミニウムキノリノール錯体(Alq3)などの有機金属錯体などが挙げられる。さらに上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引基として知られているキノキサリン環を有するキノキサリン誘導体も、電子輸送材料として用いることができる。更にこれらの材料を高分子鎖に導入した、またはこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。なお、正孔輸送層もしくは電子輸送層が発光層の役割を兼ねていてもよい。
第2電極98は、有機層94上に形成されるが、図1(a)に示すように、部分的に有機層94が形成されていない部分において凹凸構造層142上に形成されてもよい。第2電極98として、仕事関数の小さな物質を適宜用いることができ、特に限定されないが、例えば、アルミニウム、MgAg、MgIn、AlLi等の金属電極にし得る。また、第2電極98の厚みは50~500nmの範囲であることが好ましい。また、第2電極98は、凹凸構造層142の表面に形成されている凹凸構造が維持されるようにして積層されてもよい。
レンズ部材20は、基材40内において反射を繰り返してしまうような光を外部に効率よく取り出すべく利用されるものである。このようなレンズ部材20としては、有機EL素子の光の取り出しのために利用することが可能なものであればよく、特に制限されず、素子の外側へ光を取出すことが可能な構造を有する公知の光学部材を適宜利用することができる。このようなレンズ部材20としては、例えば、凸レンズ(半球レンズ、楕円レンズ等)、凹レンズ、フレネルレンズ等を使用してもよい。なお、このような光を外部に取出すためのレンズ部材20としては市販品を適宜利用してよい。なお、レンズ部材として楕円レンズを用いる場合、楕円レンズの長径をレンズ径D1とし、レンズ部材が多角形形状の場合はその対角線の長さの最大値をレンズ径D1とする。レンズ径D1は1~100mmの範囲内であることが好ましい。レンズ径D1が前記下限未満であるとレンズ部材20と発光部94aが平面視で中心が一致するように位置合わせをすることが困難になり、レンズ径D1が前記上限を超えると発光素子全体の厚みが厚くなり、ディスプレイや照明装置として用いた場合に意匠性が低下する。
光学素子100は図2(a)、(b)に示すように封止部材101を含んでもよい。封止部材101は基材40と対向して設けられ、基材40との間に空間(封止空間)105を形成する。第1電極92、有機層94、及び第2電極98は、この封止空間105内に位置する。封止部材101は接着剤層103を用いて基材40に対して固定することができる。接着剤層103は、Z方向においては基材40と封止部材101の間に位置し、XY面方向においては有機層94を取り囲むように位置してよい。封止部材101及び接着剤層103により、水分や酸素が封止空間105内に侵入することが防止される。これにより、有機層94等の劣化が抑制され、発光素子100の寿命が向上する。また、発光部94aから発光した光を有効に取り出すために、接着剤層103は発光部94aに接触しておらず、接着剤層103は発光部94aから所定の間隔を隔てて形成されることが好ましい。上記所定の間隔は例えば1μm以上であることが好ましい。
まず、基材40上に凹凸構造層142を形成する。凹凸構造層142は、例えば以下に説明するような方法によって形成することができる。
-Si(R1)(R2)-N(R3)-
式中、R1、R2、R3は、各々水素原子、アルキル基、アルケニル基、シクロアルキル基、アリール基、アルキルシリル基、アルキルアミノ基またはアルコキシ基を表す。
基材40の凹凸構造層142を形成した面とは反対側の面(光学素子の形成後に光の取り出し面となる面)にレンズ部材20を配置する。レンズ部材20は粘着剤層及び/又は接着剤層を介して基材40上に取り付けることができる。このように粘着剤層及び/又は接着剤層を介してレンズ部材20を基材40に取り付ける場合には、例えば、基材40の凹凸構造層142を配置した面とは反対側の面に接着剤又は粘着剤を塗布し、塗布した接着剤または粘着剤上にレンズ部材20を配置する等により、基材40にレンズ部材20を配置することができる。
さらに、図2(a)、(b)に示すように、封止部材101を取り付けて、上述の積層体形成工程で形成した積層体を封止してもよい。このような封止構造を作製するには、まず、基材40上の凹凸構造層142が配置された面において、有機層94を取り囲むように接着剤層103を形成する。走査可能なディスペンサ及び/または移動可能なステージ等を用いて接着剤を塗布することで、所望の位置に接着剤層103を形成することができる。また、ディスペンサの走査速度及び吐出量を制御することにより、所望の線幅で接着剤層103を形成できる。次いで、封止部材101を基材40に対向して、凹凸構造層142、第1電極92、有機層94及び金属電極98の上方に設置し、接着剤層103を介して基材40と接着させ、基材40と封止部材101の間の空間105を封止する。接着剤層103がエネルギー線照射によって硬化する材料で形成されている場合、封止後にエネルギー線を接着剤層103に照射して接着剤層103を硬化させる。例えば光硬化型接着剤の場合、高圧水銀灯やハロゲンランプにより得られる紫外領域から可視領域の光を封止部材側または基材側から照射することで、接着剤層103を硬化させることができる。また、接着剤層103が熱硬化性の場合は、接着剤層103を例えば50~150℃の範囲で加熱することによって硬化させることができる。これによって、基材40と封止部材101が一体化し、封止空間105内に有機層94が配置される。
<フィルムモールドの作製>
最初に、回折格子基板を作製するために、BCP溶媒アニール法を用いて凹凸表面を有するフィルムモールドを作製した。下記のようなポリスチレン(以下、適宜「PS」と略する)とポリメチルメタクリレート(以下、適宜「PMMA」と略する)とからなるPolymer Source社製のブロック共重合体を用意した。
PSセグメントのMn=680,000、
PMMAセグメントのMn=580,000、
ブロック共重合体のMn=1,260,000、
PSセグメントとPMMAセグメントの体積比(PS:PMMA)=57:43、
分子量分布(Mw/Mn)=1.28、PSセグメントのTg=107℃、
PMMAセグメントのTg=134℃
凹凸構造層の材料として、エタノール22mol、水5mol、濃塩酸0.004mol及びアセチルアセトン4molを混合した液に、テトラエトキシシラン(TEOS)0.75mol及びジメチルジエトキシシラン(DMDES)0.25molを滴下して加え、さらに添加材として界面活性剤S-386(セイミケミカル製)を0.5wt%加え23℃、湿度45%で2時間攪拌してSiO2のゾルゲル材料溶液を得た。このゾルゲル材料溶液を、屈折率が1.517(λ=589nm)である、100mm×100mm×0.7mm(厚み)の無アルカリガラス基板(日本電気硝子社製、OA10GF)上にバーコートしてゾルゲル材料の塗膜を形成した。バーコーターとしてドクターブレード(YOSHIMITSU SEIKI社製)を用いた。このドクターブレードは塗膜の膜厚が5μmとなるような設計であったがドクターブレードに35μmの厚みのイミドテープを張り付けて塗膜の膜厚が40μmとなるように調整した。ゾルゲル材料溶液(凹凸構造層材料)の塗布60秒後に、塗膜(ゾルゲル材料層)に上記のようにして作製したフィルムモールドを、80℃に加熱した押圧ロールを用いてガラス板上の塗膜に押し付けながら回転移動した。塗膜の押圧が終了後、フィルムモールドを剥離し、次いでオーブンを用いて300℃で60分加熱して本焼成を行った。こうしてフィルムモールドの凹凸パターンが転写された凹凸構造層がガラス基板上に形成された。なお、押圧ロールは、内部にヒータを備え、外周が4mm厚の耐熱シリコーンが被覆されたロールであり、ロール径φが50mm、軸方向長さが350mmのものを用いた。
測定モード:ダイナミックフォースモード
カンチレバー:SI-DF40(材質:Si、レバー幅:40μm、チップ先端の直径:10nm)
測定雰囲気:大気中
測定温度:25℃
凹凸構造層の任意の位置に10μm角(縦10μm、横10μm)の測定領域を測定して、上記のようにして凹凸解析画像を求めた。かかる凹凸解析画像中における、任意の凹部及び凸部との深さ方向の距離を100点以上測定し、その平均を算出して凹凸の平均深さとする。この例で得られた解析画像より凹凸構造層の凹凸パターンの平均深さは70nmであった。
凹凸構造層の任意の10μm角(縦10μm、横10μm)の測定領域を測定して上記のようにして凹凸解析画像を求めた。得られた凹凸解析画像に対し、1次傾き補正を含むフラット処理を施した後に、2次元高速フーリエ変換処理を施すことによりフーリエ変換像を得た。フーリエ変換像は波数の絶対値が0μm-1である原点を略中心とする円状の模様を示しており、且つ前記円状の模様が波数の絶対値が10μm-1以下の範囲内となる領域内に存在することが確認された。
凹凸構造層の任意の10μm角(縦10μm、横10μm)の測定領域を測定して上記のようにして凹凸解析画像を求めた。かかる凹凸解析画像中における、任意の隣り合う凸部同士又は隣り合う凹部同士の間隔を100点以上測定し、その平均を算出して凹凸の平均ピッチとした。この例で得られた解析画像より凹凸構造層の凹凸パターンの平均ピッチは900nmであった。
凹凸構造層の任意の10μm角(縦10μm、横10μm)の測定領域を測定して凹凸解析画像を求めた。その際に測定領域内の16384点(縦128点×横128点)以上の測定点における凹凸深さのデータをナノメートルスケールでそれぞれ求めた。この実施例で用いたE-sweepでは、3μm角の測定領域内において65536点(縦256点×横256点)の測定(256×256ピクセルの解像度での測定)を行った。このようにして測定される凹凸深さ(nm)に関して、先ず、全測定点のうち、基板の表面からの高さが最も高い測定点Pを求めた。そして、かかる測定点Pを含み且つ基板の表面と平行な面を基準面(水平面)として、その基準面からの深さの値(測定点Pにおける基板からの高さの値から各測定点における基板からの高さを差し引いた差分)を凹凸深さのデータとして求めた。なお、このような凹凸深さデータは、E-sweep中のソフトにより自動的に計算して求めることが可能であり、このような自動的に計算して求められた値を凹凸深さのデータとして利用できる。このようにして、各測定点における凹凸深さのデータを求めた後、凹凸の深さ分布の平均値(m)は、下記式(I)を用いて計算することにより求めることができる。
上述の深さ分布の平均値(m)の測定方法と同様にして凹凸構造層の10μm角の測定領域内の16384点(縦128点×横128点)以上の測定点において凹凸深さのデータを求めた。この例では、65536点(縦256点×横256点)での測定点を採用した。その後、各測定点の凹凸深さのデータに基づいて凹凸深さ分布の平均値(m)と凹凸深さの標準偏差(σ)を計算した。なお、平均値(m)は、上述のように、上記式(I)を計算して求めることができる。一方、凹凸深さの標準偏差(σ)は、下記式(II):
を計算して求めることができ、凹凸構造層の凹凸深さの標準偏差(σ1)は48.1nmであった。
次に凹凸構造層上に、ITOをスパッタ法で厚み120nmで成膜し、フォトレジスト塗布して透明電極(第1電極)用マスクパターンで露光した後、現像液でレジストを現像し、次いでITOをエッチング液でエッチングして、図1(a)の概略上面図に示したようなパターンの透明電極を得た。得られた透明電極をブラシで洗浄し、アルカリ性洗浄剤および有機溶剤で有機物等を除去した後、UVオゾン処理した。このように処理された透明電極上に、有機層として、正孔輸送層(4,4’,4’’トリス(9-カルバゾール)トリフェニルアミン、厚み:35nm)、発光層(トリス(2-フェニルピリジナト)イリジウム(III)錯体をドープした4,4’,4’’トリス(9-カルバゾール)トリフェニルアミン、厚み15nm、トリス(2-フェニルピリジナト)イリジウム(III)錯体をドープした1,3,5-トリス(N-フェニルベンズイミダゾール-2-イル)ベンゼン、厚み15nm)、電子輸送層(1,3,5-トリス(N-フェニルベンズイミダゾール-2-イル)ベンゼン、厚み:65nm)をそれぞれ蒸着法で積層した。さらに、フッ化リチウム層(厚み:1.5nm)、金属電極(アルミニウム、厚み:50nm)を蒸着した。有機層及び金属電極の成膜時には、基材上にパターニングマスクを配置し、所定の形状の有機層及び金属電極を形成した。本実施例の発光素子の発光部は円形であり直径D2は4.2mmであった。
屈折液(島津デバイス社製)を接着剤として用いて、ガラス基板の凹凸構造層を形成した面と反対側の面上に、直径D1が10mmであり、屈折率が1.517(λ=589nm)である半球レンズ(Edmund社製)を配置し、ガラス基板上に半球レンズを接着した。なお、半球レンズは発光部と平面視上中心が一致するように配置した。
実施例1と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、実施例1と同様にして発光素子を作製した。作製した発光素子の断面構造を模式的に表すと図4のようになる。
実施例1と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は、実施例1と同様にして発光素子を作製した。作製した発光素子の断面構造を模式的に表すと図5のようになる。
直径が10mmの半球レンズの代わりに直径が5mmの半球レンズを用いた以外は、実施例1と同様にして発光素子を作製した。比較例3の発光素子において、r1(=D2/D1)は0.84、r2(=d/D1)は0.14であった。
実施例1及び比較例1~3で作製した有機EL素子について、有機EL素子のガラス基板に垂直な方向(Z方向)を測定角度θ=0°とし、測定角度θを-80°から80°まで5°ずつ変化させた33点の測定位置において、波長450~700nmの発光スペクトル強度をそれぞれ測定した。このような発光スペクトル強度の測定は、測定装置としてTopcon社製、製品名「SR-3A」を用い、有機EL素子に約4Vの電圧を印加して、発光素子上の任意の測定点から発せられる光のスペクトルを測定することにより行った。また、発光スペクトル強度の測定に際しては、発光スペクトルを受光する受光部と、発光素子の表面上の測定点との間の距離が100cmとなるようにした。
透明電極及び金属電極のパターニングに用いるマスクを変更して発光部径D2を3.0mmに変更した以外は、実施例1と同様にして発光素子を作製した。この発光素子のr1の値は0.30、r2の値は0.07であった。
実施例2と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、実施例2と同様にして発光素子を作製した。作製した発光素子の断面構造を図4に模式的に示す。
実施例2と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は実施例2と同様にして発光素子を作製した。作製した発光素子の断面構造を図5に模式的に示す。
透明電極及び金属電極のパターニングに用いるマスクを変更して発光部径D2を5.2mmに変更した以外は、実施例2と同様にして発光素子を作製した。この発光素子のr1の値は0.52、r2の値は0.07であった。
実施例3と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、実施例3と同様にして発光素子を作製した。
実施例3と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は、実施例3と同様にして発光素子を作製した。
透明電極及び金属電極のパターニングに用いるマスクを変更して発光部径D2を6.7mmに変更した以外は、実施例2と同様にして発光素子を作製した。この発光素子のr1の値は0.67、r2の値は0.07であった。
実施例4と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、実施例4と同様にして発光素子を作製した。
実施例4と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は、実施例4と同様にして発光素子を作製した。
透明電極及び金属電極のパターニングに用いるマスクを変更して発光部径D2を7.9mmに変更した以外は、実施例2と同様にして発光素子を作製した。この発光素子のr1の値は0.79、r2の値は0.07であった。
比較例10と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、比較例10と同様にして発光素子を作製した。
比較例10と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は、比較例10と同様にして発光素子を作製した。
厚み0.7mmの無アルカリガラスを基材として用いる代わりに、屈折液(島津デバイス社製)を接着剤として用いて上記の無アルカリガラス2枚を重ねあわせて接着したものを基材として用い、それ以外は実施例2と同様にして発光素子を作製した。本実施例における基材の厚みは1.4mmであった。この発光素子のr1の値は0.30、r2の値は0.14であった。
実施例5と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は実施例5と同様にして発光素子を作製した。
実施例5と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は実施例5と同様にして発光素子を作製した。
厚み0.7mmの無アルカリガラスを基材として用いる代わりに、屈折液(島津デバイス社製)を接着剤として用いて上記の無アルカリガラス3枚を重ねあわせて接着したものを基材として用い、それ以外は実施例2と同様にして発光素子を作製した。本実施例における基材の厚みは2.1mmであった。この発光素子のr1の値は0.30、r2の値は0.21であった。
実施例6と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、実施例6と同様にして発光素子を作製した。
実施例6と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は、実施例6と同様にして発光素子を作製した。
厚み0.7mmの無アルカリガラスを基材として用いる代わりに、屈折液(島津デバイス社製)を接着剤として用いて上記の無アルカリガラス4枚を重ねあわせて接着したものを基材として用い、それ以外は実施例2と同様にして発光素子を作製した。本実施例における基材の厚みは2.8mmであった。この発光素子のr1の値は0.30、r2の値は0.28であった。
比較例17と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、比較例17と同様にして発光素子を作製した。
比較例17と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は、比較例17と同様にして発光素子を作製した。
厚み0.7mmの無アルカリガラスを基材として用いる代わりに、屈折液(島津デバイス社製)を接着剤として用いて上記の無アルカリガラス5枚を重ねあわせて接着したものを基材として用い、それ以外は実施例2と同様にして発光素子を作製した。本実施例における基材の厚みは3.5mmであった。この発光素子のr1の値は0.30、r2の値は0.35であった。
比較例20と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成した以外は、比較例20と同様にして発光素子を作製した。
比較例20と比較するために、凹凸構造層を形成せず、基材上に直接透明電極を形成し、さらに半球レンズを取り付けなかった以外は、比較例20と同様にして発光素子を作製した。
実施例2~6及び比較例4~22で作製した発光素子の輝度1000cd/m2における電流効率を求めた。実施例2及び比較例4の光学素子の電流効率について、凹凸構造層及びレンズ部材を備えない比較例5の光学素子の電流効率に対する倍率をそれぞれ算出した。同様に、実施例3及び比較例6の光学素子は比較例7の光学素子に対して、実施例4及び比較例8は比較例9に対して、比較例10及び11は比較例12に対して、実施例5及び比較例13は比較例14に対して、実施例6及び比較例15は比較例16に対して、比較例17及び18は比較例19に対して、比較例20及び21は比較例22に対して、電流効率の倍率を算出した。なお、電流効率は以下の方法で測定した。有機EL素子に電圧を印加し、印加電圧V及び有機EL素子に流れる電流Iを印加測定器(株式会社エーディーシー社製、R6244)にて、また全光束量Lをスペクトラ・コープ社製の全光束測定装置にて測定した。このようにして得られた印加電圧V、電流I及び全光束量Lの測定値から輝度値L’を算出し、電流効率については、下記計算式(F1):
電流効率=(L’/I)×S・・・(F1)
を用いて、有機EL素子の電流効率を算出した。上記式において、Sは素子の発光面積である。なお、輝度L’の値は、有機EL素子の配光特性がランバート則にしたがうものと仮定し、下記計算式(F2)で換算した。
L’=L/π/S・・・(F2)
94 有機層、94a 発光部、 98 第2電極
100 発光素子、101 封止部材、142 凹凸構造層
Claims (10)
- 基材の一方の面上に凹凸構造層、第1電極、有機層、及び第2電極をこの順序で備え、
レンズ部材が前記基材の前記一方の面の反対側の面に配置されており、
前記有機層のうち前記第1電極及び前記第2電極によって前記基材の厚み方向に挟まれた領域である発光部と前記レンズ部材は、平面視上中心が一致し、
前記発光部径D2と前記レンズ部材径D1の比が、D2/D1≦0.7を満たし、
前記基材の前記反対側の面と前記発光部の中心との間の距離dと前記レンズ部材径D1の比が、d/D1≦0.25を満たすことを特徴とする発光素子。 - 前記レンズ部材が半球レンズである請求項1に記載の発光素子。
- 前記凹凸構造層がゾルゲル材料から形成されている請求項1または2に記載の発光素子。
- 前記凹凸構造層と前記第1電極との間に、前記凹凸構造層の表面を被覆する被覆層を備える請求項1~3のいずれか一項に記載の発光素子。
- 前記基材がガラス基材である請求項1~4のいずれか一項に記載の発光素子。
- 前記レンズ部材の屈折率が1.4以上である請求項1~5のいずれか一項に記載の発光素子。
- 前記凹凸構造層が、凹凸の平均ピッチが、100~1500nmであり、凹凸深さの標準偏差が10~100nmである凹凸パターンを有する請求項1~6のいずれか一項に記載の発光素子。
- 前記レンズ部材径D1が1~100mm の範囲内である請求項1~7のいずれか一項に記載の発光素子。
- 前記発光部径D2が0.5~70mmの範囲内である請求項1~8のいずれか一項に記載の発光素子。
- 前記基材の前記反対側の面と前記発光部の中心との間の前記距離dが0.04~5mmの範囲内である請求項1~9のいずれか一項に記載の発光素子。
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Publication number | Priority date | Publication date | Assignee | Title |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109585663A (zh) * | 2017-09-29 | 2019-04-05 | 上海和辉光电有限公司 | 一种制备oled器件的方法和oled器件 |
KR102497780B1 (ko) * | 2017-12-15 | 2023-02-08 | 삼성디스플레이 주식회사 | 투명 표시 장치의 제조 방법 |
CN109273507B (zh) * | 2018-09-30 | 2020-06-05 | 霸州市云谷电子科技有限公司 | 一种显示面板 |
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CN110571356B (zh) | 2019-10-14 | 2022-04-08 | 京东方科技集团股份有限公司 | 一种发光器件、制作方法、显示面板及显示装置 |
CN112186121B (zh) * | 2020-10-06 | 2022-08-09 | 深圳市中升薄膜材料有限公司 | 一种用于amoled显示面板的复合光学膜 |
Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05238827A (ja) | 1992-02-26 | 1993-09-17 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06122852A (ja) | 1992-10-09 | 1994-05-06 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06240208A (ja) | 1993-02-19 | 1994-08-30 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06299118A (ja) | 1993-04-20 | 1994-10-25 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06306329A (ja) | 1993-02-24 | 1994-11-01 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH07196986A (ja) | 1993-12-28 | 1995-08-01 | Tonen Corp | コーティング用組成物 |
JPH08112879A (ja) | 1994-10-14 | 1996-05-07 | Tonen Corp | SiO2 被覆プラスチックフィルム及びその製造方法 |
JP2003031353A (ja) * | 2001-07-10 | 2003-01-31 | Matsushita Electric Ind Co Ltd | 発光素子およびその製造方法ならびにそれを用いた表示パネル |
JP2008066027A (ja) * | 2006-09-05 | 2008-03-21 | Fuji Electric Holdings Co Ltd | 凹凸表面を有する基板およびそれを用いた有機el素子 |
JP2008098083A (ja) * | 2006-10-16 | 2008-04-24 | Toppan Printing Co Ltd | 有機el表示体、並びに、それに用いる光学用部品 |
JP2008117735A (ja) * | 2006-11-08 | 2008-05-22 | Toppan Printing Co Ltd | 光学用部品、並びに、それを用いた有機el(エレクトロルミネッセンス)表示体 |
WO2011007878A1 (ja) | 2009-07-16 | 2011-01-20 | Jx日鉱日石エネルギー株式会社 | 回折格子及びそれを用いた有機el素子、並びにそれらの製造方法 |
JP2011054526A (ja) * | 2009-09-04 | 2011-03-17 | Fujifilm Corp | 有機電界発光装置及びその製造方法 |
JP2011054407A (ja) | 2009-09-01 | 2011-03-17 | Panasonic Electric Works Co Ltd | 有機発光素子 |
JP2011060720A (ja) * | 2009-09-14 | 2011-03-24 | Fujifilm Corp | 有機電界発光表示装置 |
JP2011071012A (ja) * | 2009-09-28 | 2011-04-07 | Fujifilm Corp | 有機電界発光表示装置 |
WO2012096368A1 (ja) | 2011-01-14 | 2012-07-19 | Jx日鉱日石エネルギー株式会社 | 微細パターン転写用のモールドの製造方法及びそれを用いた回折格子の製造方法、並びに該回折格子を有する有機el素子の製造方法 |
WO2012147759A1 (ja) | 2011-04-27 | 2012-11-01 | Jx日鉱日石エネルギー株式会社 | 有機el素子用の光取出し透明基板及びそれを用いた有機el素子 |
WO2013018149A1 (en) * | 2011-08-04 | 2013-02-07 | Hitachi, Ltd. | Data storage system using method for dynamically allocating physical data storage space |
WO2013161454A1 (ja) | 2012-04-26 | 2013-10-31 | Jx日鉱日石エネルギー株式会社 | 微細パターン転写用のモールドの製造方法及びそれを用いた凹凸構造を有する基板の製造方法、並びに該凹凸構造を有する基板を有する有機el素子の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100730114B1 (ko) * | 2004-04-19 | 2007-06-19 | 삼성에스디아이 주식회사 | 평판표시장치 |
WO2006095612A1 (ja) * | 2005-03-10 | 2006-09-14 | Konica Minolta Holdings, Inc. | 有機エレクトロルミネッセンス用樹脂フィルム基板および有機エレクトロルミネッセンスデバイス |
EP1830422A3 (en) * | 2006-03-03 | 2012-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
JP4937845B2 (ja) * | 2006-08-03 | 2012-05-23 | 日立マクセル株式会社 | 照明装置および表示装置 |
US8502440B2 (en) * | 2008-04-22 | 2013-08-06 | Zeon Corporation | Organic electroluminescent light source |
JP2009283279A (ja) * | 2008-05-22 | 2009-12-03 | Seiko Epson Corp | 有機el装置及び電子機器 |
JP2011029172A (ja) * | 2009-06-30 | 2011-02-10 | Fujifilm Corp | 有機el装置及びその設計方法 |
JP2011199174A (ja) * | 2010-03-23 | 2011-10-06 | Fujifilm Corp | 発光層形成用固形材料、並びに有機電界発光素子及びその製造方法 |
JP4911270B2 (ja) * | 2010-06-29 | 2012-04-04 | 日本ゼオン株式会社 | 面光源装置及び照明器具 |
JP5614323B2 (ja) * | 2011-02-18 | 2014-10-29 | 三菱レイヨン株式会社 | 有機エレクトロルミネッセンス素子 |
JP5763517B2 (ja) * | 2011-12-16 | 2015-08-12 | Jx日鉱日石エネルギー株式会社 | 有機el素子 |
CN103947000B (zh) * | 2011-11-18 | 2016-05-25 | 吉坤日矿日石能源株式会社 | 有机el元件 |
US9508956B2 (en) * | 2011-12-28 | 2016-11-29 | Oji Holdings Corporation | Organic light emitting diode, manufacturing method for organic light emitting diode, image display device, and illumination device |
EP2826754A4 (en) * | 2012-03-16 | 2015-12-30 | Jx Nippon Oil & Energy Corp | METHOD OF PRODUCTION AND MANUFACTURING DEVICE FOR OPTICAL SUBSTRATE WITH CONCAVE-KONVEX PATTERN BASED ON A FILM-FORM AND PRODUCTION PROCESS FOR A DEVICE COMPRISING AN OPTICAL SUBSTRATE |
US9614136B2 (en) * | 2012-04-02 | 2017-04-04 | Asahi Kasei Kabushiki Kaisha | Optical substrate, semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
KR101657604B1 (ko) * | 2012-06-11 | 2016-09-30 | 제이엑스 에네루기 가부시키가이샤 | 유기 el 소자 및 그 제조 방법 |
CN104749879A (zh) * | 2012-06-13 | 2015-07-01 | 旭化成电子材料株式会社 | 功能转印体、功能层的转印方法、封装物以及功能转印膜辊 |
WO2015084073A1 (ko) * | 2013-12-04 | 2015-06-11 | 주식회사 엘지화학 | 유기전자장치용 기판의 제조 방법 |
KR102117395B1 (ko) * | 2013-12-16 | 2020-06-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN106465495B (zh) * | 2014-04-28 | 2018-12-28 | 捷客斯能源株式会社 | 发光元件 |
-
2014
- 2014-11-26 KR KR1020167015780A patent/KR101894342B1/ko active IP Right Grant
- 2014-11-26 CN CN201480071210.8A patent/CN105850228A/zh active Pending
- 2014-11-26 WO PCT/JP2014/081182 patent/WO2015098401A1/ja active Application Filing
- 2014-11-26 AU AU2014371573A patent/AU2014371573B2/en not_active Expired - Fee Related
- 2014-11-26 JP JP2015554686A patent/JP6612130B2/ja not_active Expired - Fee Related
- 2014-11-26 EP EP14875433.6A patent/EP3089550A4/en not_active Withdrawn
- 2014-11-28 TW TW103141367A patent/TWI669840B/zh not_active IP Right Cessation
-
2016
- 2016-05-24 US US15/163,188 patent/US20160268555A1/en not_active Abandoned
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05238827A (ja) | 1992-02-26 | 1993-09-17 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06122852A (ja) | 1992-10-09 | 1994-05-06 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06240208A (ja) | 1993-02-19 | 1994-08-30 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06306329A (ja) | 1993-02-24 | 1994-11-01 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH06299118A (ja) | 1993-04-20 | 1994-10-25 | Tonen Corp | コーティング用組成物及びコーティング方法 |
JPH07196986A (ja) | 1993-12-28 | 1995-08-01 | Tonen Corp | コーティング用組成物 |
JPH08112879A (ja) | 1994-10-14 | 1996-05-07 | Tonen Corp | SiO2 被覆プラスチックフィルム及びその製造方法 |
JP2003031353A (ja) * | 2001-07-10 | 2003-01-31 | Matsushita Electric Ind Co Ltd | 発光素子およびその製造方法ならびにそれを用いた表示パネル |
JP2008066027A (ja) * | 2006-09-05 | 2008-03-21 | Fuji Electric Holdings Co Ltd | 凹凸表面を有する基板およびそれを用いた有機el素子 |
JP2008098083A (ja) * | 2006-10-16 | 2008-04-24 | Toppan Printing Co Ltd | 有機el表示体、並びに、それに用いる光学用部品 |
JP2008117735A (ja) * | 2006-11-08 | 2008-05-22 | Toppan Printing Co Ltd | 光学用部品、並びに、それを用いた有機el(エレクトロルミネッセンス)表示体 |
WO2011007878A1 (ja) | 2009-07-16 | 2011-01-20 | Jx日鉱日石エネルギー株式会社 | 回折格子及びそれを用いた有機el素子、並びにそれらの製造方法 |
JP2011054407A (ja) | 2009-09-01 | 2011-03-17 | Panasonic Electric Works Co Ltd | 有機発光素子 |
JP2011054526A (ja) * | 2009-09-04 | 2011-03-17 | Fujifilm Corp | 有機電界発光装置及びその製造方法 |
JP2011060720A (ja) * | 2009-09-14 | 2011-03-24 | Fujifilm Corp | 有機電界発光表示装置 |
JP2011071012A (ja) * | 2009-09-28 | 2011-04-07 | Fujifilm Corp | 有機電界発光表示装置 |
WO2012096368A1 (ja) | 2011-01-14 | 2012-07-19 | Jx日鉱日石エネルギー株式会社 | 微細パターン転写用のモールドの製造方法及びそれを用いた回折格子の製造方法、並びに該回折格子を有する有機el素子の製造方法 |
WO2012147759A1 (ja) | 2011-04-27 | 2012-11-01 | Jx日鉱日石エネルギー株式会社 | 有機el素子用の光取出し透明基板及びそれを用いた有機el素子 |
WO2013018149A1 (en) * | 2011-08-04 | 2013-02-07 | Hitachi, Ltd. | Data storage system using method for dynamically allocating physical data storage space |
WO2013161454A1 (ja) | 2012-04-26 | 2013-10-31 | Jx日鉱日石エネルギー株式会社 | 微細パターン転写用のモールドの製造方法及びそれを用いた凹凸構造を有する基板の製造方法、並びに該凹凸構造を有する基板を有する有機el素子の製造方法 |
Non-Patent Citations (2)
Title |
---|
KAGAKU BINRAN; OUYOU HEN: "Handbook of Chemistry, Applied Chemistry" |
See also references of EP3089550A4 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020021559A (ja) * | 2018-07-30 | 2020-02-06 | 双葉電子工業株式会社 | 有機el素子及びその製造方法 |
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US20160268555A1 (en) | 2016-09-15 |
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KR101894342B1 (ko) | 2018-09-03 |
EP3089550A1 (en) | 2016-11-02 |
JP6612130B2 (ja) | 2019-11-27 |
KR20160086398A (ko) | 2016-07-19 |
JPWO2015098401A1 (ja) | 2017-03-23 |
TWI669840B (zh) | 2019-08-21 |
AU2014371573A1 (en) | 2016-06-16 |
TW201535823A (zh) | 2015-09-16 |
CN105850228A (zh) | 2016-08-10 |
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