WO2015097989A1 - スライス方法 - Google Patents
スライス方法 Download PDFInfo
- Publication number
- WO2015097989A1 WO2015097989A1 PCT/JP2014/005983 JP2014005983W WO2015097989A1 WO 2015097989 A1 WO2015097989 A1 WO 2015097989A1 JP 2014005983 W JP2014005983 W JP 2014005983W WO 2015097989 A1 WO2015097989 A1 WO 2015097989A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wire
- coolant
- copper
- concentration
- wafer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 113
- 229910052802 copper Inorganic materials 0.000 claims abstract description 113
- 239000010949 copper Substances 0.000 claims abstract description 113
- 239000002826 coolant Substances 0.000 claims abstract description 104
- 235000012431 wafers Nutrition 0.000 claims abstract description 59
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 239000006061 abrasive grain Substances 0.000 claims description 25
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 7
- 238000011109 contamination Methods 0.000 abstract description 47
- 238000007747 plating Methods 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 13
- 238000005520 cutting process Methods 0.000 description 10
- 239000000523 sample Substances 0.000 description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 8
- 229910017604 nitric acid Inorganic materials 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000002612 dispersion medium Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000012085 test solution Substances 0.000 description 4
- 229910001369 Brass Inorganic materials 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000012488 sample solution Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005461 lubrication Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000011328 necessary treatment Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a slicing method for cutting a silicon ingot into a wafer shape using a wire saw.
- a grown silicon single crystal ingot is first cut into blocks of a certain resistivity range after first inspecting resistivity and crystallinity.
- the grown ingot is not completely cylindrical and the diameter is not uniform. Therefore, each block body is subjected to outer peripheral grinding so that the diameter is uniform.
- an orientation flat and a notch are given to the block body which carried out the outer periphery grinding.
- each block body is cut into a number of wafers, and each wafer is chamfered, mechanically ground (lapping), etched, gettering treatment, oxygen donor erasing heat treatment, mirror polishing (polishing) and cleaning steps, etc. Constructed and produced as a wafer with high precision flatness.
- Slicing from each block body has been mainly performed with an inner peripheral blade when making a wafer having a diameter of 200 mm or less.
- This slicing with the inner peripheral blade requires a blade having an outer diameter 4 to 5 times the diameter of the block body, so it is difficult to accommodate a slice of a large diameter block having a diameter of 300 mm or more. For this reason, instead of the conventional slicing by the inner peripheral blade, the slicing by a wire saw has come to be frequently used.
- a wire extending from a wire supply reel is spirally wound around two or more wire guides so as to have a predetermined tension, and then extended toward the wire take-up reel.
- This is performed by a wire saw having a different configuration.
- the wire saw for example, in the case of the loose abrasive type, the wire is run from the wire supply reel to the wire take-up reel through the wire guide while supplying the coolant containing the abrasive grains to the wire, and the ingot The block body of the ingot is cut by bringing the block body into contact with the wire stretched between the wire guides.
- a wire to which abrasive grains are fixed is used, and the block body of the ingot is cut while supplying a coolant containing no abrasive grains to the wire.
- the wire saw having such a configuration since the wire is spirally wound around the wire guide, the wire is arranged in parallel at a predetermined interval at a position in contact with the block body. A plurality of wafers can be obtained by cutting the block body.
- a wire used for a wire saw is generally made of a wire such as a steel wire, and a copper alloy plating layer such as a copper plating layer or a brass plating is formed on the surface of the wire. .
- the reason for applying a copper plating layer or a copper alloy plating layer on the surface of the wire is to give a wire to a die having a predetermined hole diameter in order to give a rust prevention effect and in a wire drawing process in which the wire is drawn stepwise. This is in order to obtain a lubrication effect when passing through.
- a wire having copper plating on the surface is used, there is a problem that the sliced wafer is contaminated by high-concentration copper.
- a copper or copper alloy plating layer is formed on the surface of a wire made of iron or an iron alloy, and the final finish is drawn.
- the manufacturing method of the wire for wire saws which peels a copper alloy plating layer is disclosed (for example, refer patent document 1).
- lubrication is smoothly performed at the time of wire drawing, the surface is hardly damaged, and quality characteristics as a wire saw wire are not impaired.
- the copper or copper alloy plating layer on the surface is peeled off and used as a wire saw wire, it is described that the cut wafer or the like is not contaminated with metal impurities.
- An object of the present invention is to provide a slicing method capable of stably obtaining a silicon wafer with high cleanliness with reduced copper contamination using a wire saw.
- the present invention uses a wire saw and presses a silicon ingot against a wire while running the wire while supplying coolant to the wire wound around a plurality of wire guides.
- the copper contamination concentration varies from slice wafer to slice wafer.
- the copper contamination concentration is kept low and constant, and the variation can be extremely suppressed.
- the copper concentration in the coolant is measured in advance, and a coolant of 80 ppm or less can be used.
- the copper concentration can be supplied to the wire using the coolant suppressed to a low concentration of 80 ppm or less, and a highly clean silicon wafer can be manufactured more stably. it can.
- the coolant after being supplied to the wire is collected in the tank, and when the coolant contained in the tank is supplied to the wire and circulated, the copper concentration of the coolant in the tank is controlled to 80 ppm or less. can do.
- the coolant after use at the time of cutting can be reused, the cost can be reduced, and the coolant in which the copper concentration is more reliably suppressed can be supplied to the wire.
- the dopant added to adjust the specific resistance of the silicon ingot to be cut can be boron.
- Boron interacts with copper to promote the penetration of copper into silicon, and copper contamination is likely to occur.
- the present invention can reduce copper contamination, it is particularly effective when boron, which easily causes copper contamination, is used as a dopant.
- the specific resistance of the silicon ingot to be cut can be set to 0.03 ⁇ ⁇ cm or less.
- the specific resistance is 0.03 ⁇ ⁇ cm or less, since a large amount of dopant is contained, more copper easily penetrates. Therefore, when the contamination reaches the saturation level, the copper contamination concentration in the slice wafer becomes a relatively high value, and the present invention that can reduce the copper contamination is particularly effective.
- the pH of the coolant supplied to the wire can be set within a range of 5-7.
- the diameter of the silicon ingot can be 450 mm or more.
- the temperature of the silicon ingot when slicing with a wire saw increases as the diameter of the ingot increases, and as the temperature increases, the diffusion of copper into the silicon becomes easier.
- the present invention that can reduce copper contamination is particularly effective when the diameter of the silicon ingot to be cut is large, such as when the diameter is 450 mm or more.
- the coolant may include abrasive grains.
- the present invention can also be used in, for example, a free-abrasive wire saw slice in which coolant containing abrasive grains is supplied to a wire.
- the slicing method of the present invention it is possible to reduce copper contamination on a sliced wafer obtained by cutting using a wire saw, and to provide a silicon wafer with high cleanliness stably. it can.
- the present invention will be described in detail as an example of an embodiment with reference to the drawings, but the present invention is not limited thereto.
- the copper concentration in the coolant is greatly related to the copper contamination generated in the slice wafer.
- the copper concentration in the coolant exceeds 80 ppm, the copper contamination concentration of the slice wafer increases and reaches a saturated state.
- it is 80 ppm or less it has been found that the copper contamination concentration of the slice wafer can be kept low, and thereby the variation of the copper contamination concentration for each slice wafer can be suppressed, and the present invention has been completed.
- FIG. 4 is a schematic view showing an example of a wire saw that can be used in the slicing method of the present invention.
- the wire saw 1 mainly includes a wire 2 for cutting a silicon ingot (hereinafter simply referred to as a work W), a plurality of wire guides 3 around which the wire 2 is wound, and tension on the wire 2. It comprises a wire tension applying mechanism 4, 4 ′ for applying, a work feeding mechanism 5 for holding and cutting the work W to be cut, a coolant supply mechanism 6, and the like.
- the work W is bonded to the work plate via a joining member, and the work plate is held by the work holding unit of the work feeding mechanism 5.
- the workpiece W held by the workpiece holding portion in this way can be sent out to the wire 2 disposed below using the LM guide of the workpiece feeding mechanism 5.
- the wire 2 is fed out from one wire reel 7 and enters the wire guide 3 via the wire tension applying mechanism 4.
- a wire array is formed by winding the wire 2 around the wire guide 3 about 300 to 400 times. Then, the wire 2 is wound around the wire reel 7 'through the other wire tension applying mechanism 4'. Tension is applied to the wire 2 wound in this manner, and the drive motor 10 can reciprocate at a reversal cycle time and travel speed set in the axial direction in advance.
- the wire 2 has the abrasive particles fixed on the surface of a wire element such as a steel wire.
- a wire element such as a steel wire.
- an electrodeposited diamond wire in which diamond abrasive grains are fixed to the wire element by Ni bonding can be used.
- diamond abrasive grains are firmly fixed to the wire element by nickel electrodeposition. Therefore, there is an advantage that the wire life is long.
- the fixing method is not particularly limited as long as the abrasive grains can be fixed to the wire.
- a nozzle 8 is disposed above the wire 2 so that the coolant 9 can be supplied to the wire 2.
- the number of nozzles 8 and the like are not particularly limited and can be appropriately determined.
- the coolant 9 for example, a propylene glycol (PG) mixed solution can be used.
- abrasive grains are not fixed to the wire 2 in the loose abrasive system. Instead, a coolant 9 ′ containing abrasive grains is prepared and can be supplied from the nozzle 8.
- a coolant 9 ′ containing abrasive grains is prepared and can be supplied from the nozzle 8.
- an abrasive grain in this coolant what consists of SiC, for example can be used.
- the coolant supply mechanism 6 is provided with a tank 11 for recovering the used coolant 9 (or coolant 9 ') supplied to the wire 2 at the time of cutting.
- the coolant 9 whose temperature is adjusted from the tank 11 via the temperature adjusting mechanism 12 can be circulated and supplied from the nozzle 8.
- the coolant supply mechanism 6 is not limited to the tank 11 and the temperature adjustment mechanism 12.
- a centrifuge can be further provided to remove or collect chips, abrasive grains, and other impurities in the used coolant.
- the coolant 9 which performed those necessary treatments is stored in the tank 11.
- a part of the coolant can be collected or removed from the tank 11, and on the contrary, new clean coolant and abrasive grains can be additionally added to the tank 11.
- a silicon ingot is prepared.
- the silicon ingot prepared here is not particularly limited, and for example, a silicon single crystal rod grown by a CZ (Czochralski) method or an FZ (Floating Zone) method can be used.
- the diameter can be a relatively large one of 450 mm or more. This is because the larger the diameter of the silicon ingot, the higher the temperature when cutting with a wire saw, and the more easily copper diffuses into the silicon.
- the dopant can be boron. This is because boron interacts with copper and promotes the penetration of copper into silicon, and copper contamination is likely to occur.
- the specific resistance can be 0.03 ⁇ ⁇ cm or less. This is because, in such a low resistivity slice wafer, copper is more likely to penetrate, and when the copper contamination reaches, for example, a saturation level, the concentration value at that time is relatively high and adversely affects the semiconductor characteristics. .
- the silicon ingot is cut into a wafer using the wire saw 1.
- the prepared silicon ingot is processed into an appropriate shape by cutting it into blocks (work W), the work W is held by the work holding portion of the work feed mechanism 5, and sent downward.
- the coolant 9 (or coolant 9 ′) stored in the tank 11 is supplied from the nozzle 8 to the wire 2.
- the wire 2 is fed out from the wire reel 7 and wound around the wire reel 7 ′ through the wire tension applying mechanisms 4, 4 ′, thereby causing the wire 2 to travel.
- the workpiece W is pressed against the reciprocating wire 2 to cut it into a wafer shape to obtain a slice wafer.
- the used coolant 9 is collected into the tank 11 after appropriately performing necessary processing (centrifugation or the like) and supplied to the wire 2 again.
- cost can be reduced by reusing and supplying the coolant 9 after use.
- the coolant supplied to the wire 2 is not particularly limited except the copper concentration as described later.
- the pH is not limited, but can be in the range of 5 to 7, for example.
- Japanese Patent Application Laid-Open No. 63-272460 describes that copper contamination occurs when silicon is processed with a processing solution (alkali solution) containing copper. By setting the pH to 7 or less, This phenomenon can be prevented more effectively.
- an organic acid typified by citric acid can be added to the coolant to ensure that the pH is 7 or less.
- the pH of the coolant is not particularly limited, and may be made of SiC, for example, as conventionally used.
- the copper concentration in the coolant will be described in detail.
- the copper concentration in the coolant is 80 ppm or less. More preferably, it is 40 ppm or less. In order to avoid copper contamination on the slice wafer, naturally, the lower the better.
- a coolant containing abrasive grains is used as in the free abrasive grain method (that is, when the coolant is composed of abrasive grains and a dispersion medium)
- the value of 80 ppm or less is calculated from the weight of the dispersion medium in the coolant. Value.
- the value is calculated from the weight of the coolant itself.
- the copper concentration in the coolant is actually measured in advance before supply and confirmed to be 80 ppm or less.
- the coolant is preferably supplied to the wire. More specifically, the copper concentration of the coolant stored in the tank 11 connected to the nozzle 8 serving as the supply means is controlled to 80 ppm or less.
- the management method is not particularly limited, and can be appropriately determined according to the cost and the target copper concentration.
- the coolant in the tank 11 is periodically collected and its copper concentration is measured. If the measured value is high and is likely to exceed 80 ppm, a new coolant is added to the tank 11 to dilute it and the copper concentration is reduced. Can be lowered. Alternatively, a part of the coolant in the tank 11 can be replaced with a new coolant, thereby reducing the copper concentration.
- the measuring method of the copper concentration in a coolant is not specifically limited. It can be measured using an atomic absorption method or the like.
- a measurement method using a coolant 9 ′ containing SiC abrasive grains is shown below. First, an appropriate amount is weighed from the coolant collected from the tank 11 to prepare a sample, mixed with a mixed acid of nitric acid and hydrofluoric acid, decomposed with microwaves, and diluted with a nitric acid solution to prepare a test solution. This test solution is diluted appropriately, and the amount of copper contained is determined by atomic absorption spectrometry.
- the copper concentration in the coolant is the SiC concentration in the coolant that has been measured in advance (weigh an appropriate amount from the slurry as a sample, This can be measured by weighing the residue obtained by evaporation to dryness), and the weight of the dispersion medium in the coolant is determined and calculated as the concentration relative to the weight of the dispersion medium.
- the copper concentration can be similarly calculated using the atomic absorption method. In this case, it is calculated from the weight of the entire coolant.
- the copper contamination concentration in the slice wafer can be reduced, and The copper contamination concentration can be made more uniform than before. Therefore, it is possible to stably manufacture a slice wafer having a high cleanliness with respect to copper which is an impurity as compared with the conventional case.
- Example 1 to 9 Comparative Examples 1 to 6
- the wire saw of FIG. 4 the wire is reciprocated while supplying coolant to the wire, and the silicon single crystal ingot is sliced into a wafer.
- coolant having a copper concentration adjusted to 80 ppm or less as in the present invention is supplied to the wire.
- Comparative Examples 1 to 6 unlike the present invention, a coolant whose copper concentration is adjusted to be higher than 80 ppm is supplied to the wire.
- the copper concentration in the coolant was analyzed by the following method. 250 mg is weighed from the coolant sampled from the wire saw, used as a sample, mixed with a mixed acid of nitric acid and hydrofluoric acid, decomposed with microwaves, and diluted with a nitric acid solution to prepare a test solution. This test solution was diluted appropriately and the amount of copper contained was quantified by atomic absorption spectrometry. In the measurement pretreatment, since the SiC abrasive grains contained in the coolant are not decomposed, the copper concentration in the coolant is obtained from the SiC concentration in the coolant measured in advance, and the weight of the dispersion medium in the coolant is obtained. It was calculated as the concentration relative to the weight of the dispersion medium.
- concentration of a slice wafer was performed with the following method. It is known that a wafer sliced with a wire saw has a crack layer and a strained layer on the surface, and this portion contains copper and other metals in a high concentration. For this reason, in order to measure the density
- sample for analysis was washed with a washing solution in which hydrofluoric acid, hydrochloric acid, hydrogen peroxide solution and pure water were mixed, and the whole sample was dissolved by the method disclosed in JP-A-2002-368052 to obtain a sample solution.
- the vapor containing hydrofluoric acid and nitric acid is exposed to the sample to decompose the entire amount of the sample.
- the decomposition product was subjected to silicon removal treatment, and then the residue obtained by evaporation to dryness was dissolved in dilute hydrofluoric acid to prepare a sample solution.
- the obtained sample solution was appropriately diluted with a nitric acid solution and analyzed by ICP-MS. These operations were performed using an analysis chip obtained by cleaving the slice wafer.
- the amount of copper diffusing into single crystal silicon increases as the concentration of boron contained in silicon increases.
- copper is easily diffused into silicon by forming a bond with boron. Therefore, when cutting a silicon single crystal having a relatively high boron concentration and a low specific resistance (0.03 ⁇ ⁇ cm or less) as in Examples 1 to 9, the boron concentration is lower than that and the specific resistance is high.
- the copper contamination concentration of the slice wafer tends to be higher than (for example, 0.04 ⁇ ⁇ cm or more). Therefore, the present invention that suppresses the copper concentration in the coolant to 80 ppm or less is particularly effective when the specific resistance is 0.03 ⁇ ⁇ cm or less.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.
- the slicing method of the present invention using the loose abrasive type wire saw has been shown.
- the present invention can naturally be applied to the slicing method using the fixed abrasive type wire saw. It is.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
続いて、各ブロック体が多数枚のウェーハに切断され、それぞれのウェーハについて、面取り、機械研削(ラッピング)、エッチング、ゲッタリング処理、酸素ドナー消去熱処理、鏡面研磨(ポリッシング)及び洗浄する工程等から構成され、高精度の平坦度を有するウェーハとして生産される。
このようなワイヤソーにおいて、例えば遊離砥粒方式のものでは、研削砥粒が含まれるクーラントをワイヤに供給しながら、ワイヤ供給リールからワイヤガイドを介してワイヤ巻き取りリールへとワイヤを走行させ、インゴットのブロック体をワイヤガイド間に張られたワイヤに接触させることで、インゴットのブロック体を切断する。
また、固定砥粒方式のものでは砥粒を固着したワイヤを用いており、砥粒を含まないクーラントをワイヤに供給しつつ、インゴットのブロック体を切断する。
このような構成を有するワイヤソーでは、ワイヤガイドの周囲にワイヤを螺旋状に巻き付けているので、ブロック体と接触する位置にはワイヤが所定の間隔で平行に配置されることになるため、一度のブロック体の切断で複数枚のウェーハを得ることができる。
特許文献1の方法では、伸線時の潤滑が円滑に行われて表面に傷等が発生し難く、ワイヤソー用ワイヤとしての品質特性を損なわない。そしてその後、表面の銅又は銅合金メッキ層を剥離してワイヤソー用ワイヤとして用いるので、切り出したウェーハ等が金属不純物で汚染されることがないと記載されている。
本発明者らがワイヤソーを用いたスライス方法について鋭意研究を行った結果、スライスウェーハに生じる銅汚染にはクーラント中の銅濃度が大きく関係していることが分かった。さらには、クーラント中の銅濃度が80ppmを超えるとスライスウェーハの銅汚染濃度が高くなり飽和状態に達することを見出した。また、その一方で80ppm以下であればスライスウェーハの銅汚染濃度を低く抑えられること、そしてそれによってスライスウェーハごとの銅汚染濃度のばらつきを抑制できることを見出し、本発明を完成させた。
このように巻掛けられたワイヤ2に張力を付与し、駆動モータ10によって軸方向へ予め設定した反転サイクル時間、走行速度で往復走行させることができるようになっている。
まず、シリコンインゴットを用意する。ここで用意するシリコンインゴットは特に限定されず、例えばCZ(Czochralski)法やFZ(Floating Zone)法により育成したシリコン単結晶棒とすることができる。
例えば、直径は450mm以上の比較的大きなものとすることができる。シリコンインゴットの直径が大きくなるほどワイヤソーでの切断時に高温になりやすく、シリコンへの銅の拡散も生じやすくなるからである。
また、ドーパントをボロンとすることができる。ボロンは銅と相互作用し、シリコンへの銅の侵入を促進する作用があり、銅汚染が発生し易いためである
また、比抵抗を0.03Ω・cm以下とすることができる。このような低抵抗率のスライスウェーハにおいて、より銅が侵入しやすく、銅汚染が例えば飽和レベルにまで達すると、そのときの濃度値は比較的高く、半導体特性に悪影響を与えてしまうためである。
まず、用意したシリコンインゴットをブロックに切断するなどして適切な形状に加工し(ワークW)、ワーク送り機構5のワーク保持部によりワークWを保持し、下方へと送りだす。
そして、タンク11内に貯められたクーラント9(またはクーラント9’)をノズル8からワイヤ2へと供給する。
また、ワイヤリール7からワイヤ2を繰り出し、ワイヤ張力付与機構4、4’を経てワイヤリール7’へと巻き取ることによって、ワイヤ2を走行させる。
このようにして、ワイヤ2にクーラント9を供給しつつ、往復走行するワイヤ2にワークWを押し当てることによってウェーハ状に切断し、スライスウェーハを得る。
そして、使用後のクーラント9は、適宜必要な処理(遠心分離など)が行われた後でタンク11へ回収され、ワイヤ2に再度供給される。このように使用後のクーラント9を再利用して循環供給することでコストの低減を図ることができる。
また、砥粒を含む場合、その砥粒も特に限定されず、例えば従来からよく用いられているように、SiCからなるものとすることができる。
なお、遊離砥粒方式のように砥粒を含むクーラントを用いる場合(すなわち、クーラントが砥粒と分散媒から構成されている場合)、80ppm以下という値は、クーラント中の分散媒の重量から算出した値とする。
一方、固定砥粒方式のように砥粒を含まないクーラントを用いる場合、そのクーラント自体の重量から算出した値とする。
より具体的には、供給手段であるノズル8に連結されたタンク11内に貯められたクーラントの銅濃度を80ppm以下に管理しておくことが挙げられる。管理方法は特に限定されず、コストや、目標とする銅濃度に応じて適宜決定することができる。例えば、タンク11内のクーラントを定期的に採取してその銅濃度を測定し、測定値が高く80ppmを超えそうであるならば、新たなクーラントをタンク11内に追加投入して薄め、銅濃度を下げることができる。またはタンク11内のクーラントの一部を新たなクーラントと交換し、それによって銅濃度を下げることができる。
一例として、SiC砥粒を含むクーラント9’での測定方法を以下に示す。まずタンク11内から採取したクーラントから適量を量り取って試料とし、硝酸とフッ酸の混酸と混ぜ合わせ、マイクロ波で分解処理をした後、硝酸溶液で希釈して検液を作製する。この検液を適宣希釈して、原子吸光法により含まれる銅の量を定量する。なお、前記の測定前処理において、クーラントに含まれるSiC砥粒は分解されないため、クーラント中の銅濃度は、予め測定しておいたクーラント中のSiC濃度(スラリから適量を量り取って試料とし、これを蒸発乾固した残渣物の重量を量ることよって測定できる)からクーラント中の分散媒重量を求め、分散媒重量に対する濃度として算出する。
クーラント中に砥粒を含まない場合(クーラント9)も同様に原子吸光法を用いて銅濃度を算出することができるが、この場合は、クーラント全体の重量から算出する。
(実施例1~9、比較例1~6)
図4のワイヤソーを用い、ワイヤにクーラントを供給しつつワイヤを往復走行させ、シリコン単結晶インゴットをウェーハ状にスライスする。このとき、実施例1~9では、本発明のように銅濃度を80ppm以下に調整したクーラントをワイヤに供給する。一方、比較例1~6では、本発明と異なって銅濃度を80ppmより高く調整したクーラントをワイヤに供給する。
まず、グリコール系の分散媒にSiC砥粒を分散した。このようにして作製したクーラントの銅濃度は5ppmだった。そこで、この作製したクーラントを図4と同様のワイヤソーに充填し、表面に真鍮メッキのあるワイヤを用いて、シリコンブロックをスライスし、ワイヤ表面のメッキ部を摩耗させることによりクーラントに銅を混入させて、クーラント中の銅濃度を調整した。ワイヤ表面の真鍮メッキ量とメッキの組成は分かっているので、摩耗させるワイヤの距離を調整することで、クーラント中の銅濃度を目的の濃度に調整した。
スライスするブロックは、ドーパントとしてボロンを添加して、MCZ法で引き上げたものを用いた。ブロックは、比抵抗が0.03Ω・cm、0.02Ω・cm、0.01Ω・cmのように異なるものを3種類準備した。そして、それぞれについて、使用したクーラントごとにスライスウェーハの銅汚染濃度を算出し、その濃度を比較した。
尚、本試験においてはワイヤには表面にメッキのないワイヤを使用して、スライス中にワイヤから銅がクーラント中に混入する事を防止した。
ワイヤソーから採取したクーラントから250mgを量り取って試料とし、硝酸とフッ酸の混酸と混ぜ合わせマイクロ波で分解処理をした後、硝酸溶液で希釈して検液を作製する。この検液を適宣希釈して、原子吸光法により含まれる銅の量を定量した。なお、前記の測定前処理において、クーラントに含まれるSiC砥粒は分解されないため、クーラント中の銅濃度は、あらかじめ測定しておいたクーラント中のSiC濃度から、クーラント中の分散媒重量を求め、分散媒重量に対する濃度として算出した。
ワイヤソーでスライスされたウェーハは、表面にクラック層や歪み層が存在し、この部分には銅やその他の金属が高濃度で含まれることが知られている。このため、ウェーハの内部に拡散した銅の濃度を測定するためには、この部分を取り除かなければならない。そこで、スライスウェーハの表面50ミクロンの部分(両面で100ミクロン)を、フッ酸と硝酸を混合した液でエッチングして除去し、残りの部分を分析用サンプルとした。
さらに、分析用サンプルをフッ酸と塩酸と過酸化水素水と純水を混合した洗浄液で洗浄し、特開2002-368052号公報に示されている方法で全量溶解して試料溶液を得た。
そして得られた試料溶液を硝酸溶液で適宣希釈してICP-MSで分析した。尚、これらの作業は、スライスウェーハを劈開した分析チップにて行った。
Claims (8)
- ワイヤソーを用い、複数のワイヤガイドに巻掛けされたワイヤに対してクーラントを供給しつつ、前記ワイヤを走行させながら、該ワイヤにシリコンインゴットを押し当てて切断し、複数枚のスライスウェーハを得るスライス方法であって、
前記ワイヤへ供給するクーラント中の銅濃度を80ppm以下とすることを特徴とするスライス方法。 - 前記ワイヤへクーラントを供給する前に、予め、クーラント中の銅濃度を測定し、80ppm以下のクーラントを用いることを特徴とする請求項1に記載のスライス方法。
- 前記ワイヤに供給された後のクーラントをタンクに回収するとともに、該タンク内に収容されたクーラントをワイヤに供給して循環使用するとき、
前記タンク内のクーラントの銅濃度を80ppm以下に管理することを特徴とする請求項1または請求項2に記載のスライス方法。 - 前記切断するシリコンインゴットの比抵抗を調整するために添加されているドーパントをボロンとすることを特徴とする請求項1から請求項3のいずれか一項に記載のスライス方法。
- 前記切断するシリコンインゴットの比抵抗を0.03Ω・cm以下とすることを特徴とする請求項1から請求項4のいずれか一項に記載のスライス方法。
- 前記ワイヤへ供給するクーラントのpHを5~7の範囲内とすることを特徴とする請求項1から請求項5のいずれか一項に記載のスライス方法。
- 前記シリコンインゴットの直径を450mm以上とすることを特徴とする請求項1から請求項6のいずれか一項に記載のスライス方法。
- 前記クーラントを、砥粒を含むものとすることを特徴とする請求項1から請求項7のいずれか一項に記載のスライス方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201480070306.2A CN105849872B (zh) | 2013-12-26 | 2014-12-01 | 切片方法 |
DE112014005468.2T DE112014005468B4 (de) | 2013-12-26 | 2014-12-01 | Schneidverfahren |
KR1020167016404A KR102109894B1 (ko) | 2013-12-26 | 2014-12-01 | 슬라이스 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013269043A JP6090154B2 (ja) | 2013-12-26 | 2013-12-26 | スライス方法 |
JP2013-269043 | 2013-12-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015097989A1 true WO2015097989A1 (ja) | 2015-07-02 |
Family
ID=53477901
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/005983 WO2015097989A1 (ja) | 2013-12-26 | 2014-12-01 | スライス方法 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6090154B2 (ja) |
KR (1) | KR102109894B1 (ja) |
CN (1) | CN105849872B (ja) |
DE (1) | DE112014005468B4 (ja) |
TW (1) | TWI583487B (ja) |
WO (1) | WO2015097989A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112829096A (zh) * | 2020-12-30 | 2021-05-25 | 镇江耐丝新型材料有限公司 | 一种表面无黄铜镀层的切割钢丝及其制备方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003225700A (ja) * | 2002-01-31 | 2003-08-12 | Mimasu Semiconductor Industry Co Ltd | 廃スラッジの再利用システム |
JP2009220269A (ja) * | 2008-02-21 | 2009-10-01 | Sumco Corp | ワイヤソー用スラリー |
JP2010040935A (ja) * | 2008-08-07 | 2010-02-18 | Sumco Corp | エピタキシャルシリコンウェーハおよびその製造方法 |
JP2011005561A (ja) * | 2009-06-23 | 2011-01-13 | Shin Etsu Handotai Co Ltd | シリコンインゴットの切断方法および切断システム |
JP2011016185A (ja) * | 2009-07-08 | 2011-01-27 | Sumco Corp | スラリー流通経路の洗浄液およびその洗浄方法 |
WO2011105255A1 (ja) * | 2010-02-26 | 2011-09-01 | 株式会社Sumco | 半導体ウェーハの製造方法 |
JP2012015181A (ja) * | 2010-06-29 | 2012-01-19 | Kyocera Corp | 半導体基板の製造方法 |
JP2012024866A (ja) * | 2010-07-21 | 2012-02-09 | Sumco Corp | ワイヤソー切断スラッジの回収方法およびその装置 |
JP2012514349A (ja) * | 2008-12-31 | 2012-06-21 | エムイーエムシー・シンガポール・プライベイト・リミテッド | ソーカーフからシリコン粒子を回収及び浄化する方法 |
JP2013146802A (ja) * | 2012-01-17 | 2013-08-01 | Panasonic Corp | シリコン加工粉不純物除去装置及び方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW311108B (en) * | 1996-02-02 | 1997-07-21 | Nippei Toyama Corp | The slurry managing system and method for wire saws |
JP3244426B2 (ja) | 1996-03-26 | 2002-01-07 | 信越半導体株式会社 | ワイヤソー用ワイヤの製造方法及びワイヤソー用ワイヤ |
JP3219142B2 (ja) * | 1997-12-17 | 2001-10-15 | 信越半導体株式会社 | 半導体シリコンウエーハ研磨用研磨剤及び研磨方法 |
JP3255103B2 (ja) * | 1997-12-25 | 2002-02-12 | 信越半導体株式会社 | シリコンウエーハの保管用水及び保管する方法 |
US6884721B2 (en) * | 1997-12-25 | 2005-04-26 | Shin-Etsu Handotai Co., Ltd. | Silicon wafer storage water and silicon wafer storage method |
JP2002270568A (ja) * | 2001-03-12 | 2002-09-20 | Mimasu Semiconductor Industry Co Ltd | 半導体ウエーハの製造方法および金属モニタリング装置 |
JP2004075859A (ja) * | 2002-08-19 | 2004-03-11 | Chubu Kiresuto Kk | 研磨スラリーの清浄化法 |
JP2005057054A (ja) | 2003-08-04 | 2005-03-03 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハおよびその製造方法 |
JP5515593B2 (ja) * | 2009-10-07 | 2014-06-11 | 株式会社Sumco | ワイヤーソーによるシリコンインゴットの切断方法およびワイヤーソー |
US8932952B2 (en) * | 2010-04-30 | 2015-01-13 | Sumco Corporation | Method for polishing silicon wafer and polishing liquid therefor |
-
2013
- 2013-12-26 JP JP2013269043A patent/JP6090154B2/ja active Active
-
2014
- 2014-12-01 WO PCT/JP2014/005983 patent/WO2015097989A1/ja active Application Filing
- 2014-12-01 DE DE112014005468.2T patent/DE112014005468B4/de active Active
- 2014-12-01 KR KR1020167016404A patent/KR102109894B1/ko active IP Right Grant
- 2014-12-01 CN CN201480070306.2A patent/CN105849872B/zh active Active
- 2014-12-15 TW TW103143685A patent/TWI583487B/zh active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003225700A (ja) * | 2002-01-31 | 2003-08-12 | Mimasu Semiconductor Industry Co Ltd | 廃スラッジの再利用システム |
JP2009220269A (ja) * | 2008-02-21 | 2009-10-01 | Sumco Corp | ワイヤソー用スラリー |
JP2010040935A (ja) * | 2008-08-07 | 2010-02-18 | Sumco Corp | エピタキシャルシリコンウェーハおよびその製造方法 |
JP2012514349A (ja) * | 2008-12-31 | 2012-06-21 | エムイーエムシー・シンガポール・プライベイト・リミテッド | ソーカーフからシリコン粒子を回収及び浄化する方法 |
JP2011005561A (ja) * | 2009-06-23 | 2011-01-13 | Shin Etsu Handotai Co Ltd | シリコンインゴットの切断方法および切断システム |
JP2011016185A (ja) * | 2009-07-08 | 2011-01-27 | Sumco Corp | スラリー流通経路の洗浄液およびその洗浄方法 |
WO2011105255A1 (ja) * | 2010-02-26 | 2011-09-01 | 株式会社Sumco | 半導体ウェーハの製造方法 |
JP2012015181A (ja) * | 2010-06-29 | 2012-01-19 | Kyocera Corp | 半導体基板の製造方法 |
JP2012024866A (ja) * | 2010-07-21 | 2012-02-09 | Sumco Corp | ワイヤソー切断スラッジの回収方法およびその装置 |
JP2013146802A (ja) * | 2012-01-17 | 2013-08-01 | Panasonic Corp | シリコン加工粉不純物除去装置及び方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI583487B (zh) | 2017-05-21 |
CN105849872A (zh) | 2016-08-10 |
KR20160101927A (ko) | 2016-08-26 |
JP2015126069A (ja) | 2015-07-06 |
TW201531376A (zh) | 2015-08-16 |
KR102109894B1 (ko) | 2020-05-12 |
CN105849872B (zh) | 2019-04-19 |
DE112014005468T5 (de) | 2016-08-18 |
DE112014005468B4 (de) | 2023-03-23 |
JP6090154B2 (ja) | 2017-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI334622B (en) | Unpolished semiconductor wafer and method for producing an unpolished semiconductor wafer | |
JP6172053B2 (ja) | 固定砥粒ワイヤ及びワイヤソー並びにワークの切断方法 | |
US20140318522A1 (en) | Method for slicing workpiece | |
CN108136567B (zh) | 线工具用金刚石磨粒以及线工具 | |
JP2010074056A (ja) | 半導体ウェーハおよびその製造方法 | |
US20120085333A1 (en) | Apparatus and method for sawing single crystal ingot | |
JP6090154B2 (ja) | スライス方法 | |
US20130333682A1 (en) | Method for simultaneously slicing a multiplicity of wafers from a cylindrical workpiece | |
JP4912729B2 (ja) | 炭化珪素単結晶インゴットの外形加工方法 | |
JP3760187B2 (ja) | 単結晶インゴットの加工方法 | |
KR102367641B1 (ko) | 워크의 절단방법 및 가공액 | |
CN109716486B (zh) | 硅锭的切割方法、硅晶圆的制造方法及硅晶圆 | |
EP3981566A1 (en) | Method for cutting polycrystalline silicon rod, method for manufacturing cut rod of polycrystalline silicon rod, method for manufacturing nugget of polycrystalline silicon rod, and polycrystalline silicon rod cutting device | |
JP6705399B2 (ja) | ウェーハの製造方法 | |
JP5888203B2 (ja) | ワイヤソー用スラリーの製造方法 | |
JP5578409B2 (ja) | 半導体ウェーハ製造方法 | |
CN117256040A (zh) | 用于由半导体材料制成的圆柱形棒生产圆盘的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14873395 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20167016404 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 112014005468 Country of ref document: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14873395 Country of ref document: EP Kind code of ref document: A1 |