JP6705399B2 - ウェーハの製造方法 - Google Patents
ウェーハの製造方法 Download PDFInfo
- Publication number
- JP6705399B2 JP6705399B2 JP2017042010A JP2017042010A JP6705399B2 JP 6705399 B2 JP6705399 B2 JP 6705399B2 JP 2017042010 A JP2017042010 A JP 2017042010A JP 2017042010 A JP2017042010 A JP 2017042010A JP 6705399 B2 JP6705399 B2 JP 6705399B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- single crystal
- wire
- crystal ingot
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 235000012431 wafers Nutrition 0.000 claims description 63
- 239000013078 crystal Substances 0.000 claims description 41
- 238000005520 cutting process Methods 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 description 37
- 238000000034 method Methods 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 8
- 239000002002 slurry Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Laser Beam Processing (AREA)
Description
本発明のウェーハの製造方法(実施例1、2)と従来の方法(比較例)とで、それぞれ同じ長さのシリコン単結晶インゴットを切断した際の結果を比較した。実施例1、2では、図1のような本発明のウェーハ製造方法に従ったフローでシリコン単結晶インゴットを切断して複数のシリコンウェーハを製造した。一方、比較例では、図3のような従来の方法に従ったフローでシリコン単結晶インゴットを切断した。また、図1、3の工程4及び4’におけるシリコンウェーハの厚さを、実施例1、2、比較例の全てで880μmとなるように切断した。また、図1、3の工程5及び5’以降の加工条件は同条件とした。
Claims (2)
- シリコン単結晶インゴットを切断することでウェーハを製造する方法であって、
ワイヤソーを用いて前記シリコン単結晶インゴットをスライスすることでウェーハ状のワークを得た後に、レーザーを用いて前記ウェーハ状のワークを厚さ方向に分割することで、それぞれの前記ウェーハ状のワークから複数のウェーハを得、
前記レーザーを用いた前記ウェーハ状のワークの分割において、前記ウェーハ状のワークの片側の面に前記レーザーを照射して、ウェーハを一枚剥離し、続いて、反対側の面に前記レーザーを照射して、ウェーハを一枚剥離することにより、前記ウェーハ状のワークを厚さ方向に3枚に分割することを特徴とするウェーハの製造方法。 - 前記シリコン単結晶インゴットを直径が300mm以上のものとすることを特徴とする請求項1に記載のウェーハの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017042010A JP6705399B2 (ja) | 2017-03-06 | 2017-03-06 | ウェーハの製造方法 |
PCT/JP2018/005366 WO2018163752A1 (ja) | 2017-03-06 | 2018-02-16 | ウェーハの製造方法 |
TW107105867A TW201834050A (zh) | 2017-03-06 | 2018-02-22 | 晶圓的製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017042010A JP6705399B2 (ja) | 2017-03-06 | 2017-03-06 | ウェーハの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018148042A JP2018148042A (ja) | 2018-09-20 |
JP6705399B2 true JP6705399B2 (ja) | 2020-06-03 |
Family
ID=63448920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017042010A Active JP6705399B2 (ja) | 2017-03-06 | 2017-03-06 | ウェーハの製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6705399B2 (ja) |
TW (1) | TW201834050A (ja) |
WO (1) | WO2018163752A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210317394A1 (en) | 2018-08-06 | 2021-10-14 | Nissan Chemical Corporation | Cell culture system and cell mass production method using same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11170169A (ja) * | 1997-12-12 | 1999-06-29 | Toshiba Ceramics Co Ltd | 半導体ウェーハの製造方法およびその装置 |
JPH11333708A (ja) * | 1998-06-01 | 1999-12-07 | Shin Etsu Handotai Co Ltd | ラッピング装置及び方法 |
JP2006245498A (ja) * | 2005-03-07 | 2006-09-14 | Sharp Corp | 基板の製造方法およびその装置 |
JP6531885B2 (ja) * | 2013-10-07 | 2019-06-19 | 信越ポリマー株式会社 | 内部加工層形成単結晶部材およびその製造方法 |
JP2015123465A (ja) * | 2013-12-26 | 2015-07-06 | 信越ポリマー株式会社 | 基板加工装置及び基板加工方法 |
JP6562819B2 (ja) * | 2015-11-12 | 2019-08-21 | 株式会社ディスコ | SiC基板の分離方法 |
-
2017
- 2017-03-06 JP JP2017042010A patent/JP6705399B2/ja active Active
-
2018
- 2018-02-16 WO PCT/JP2018/005366 patent/WO2018163752A1/ja active Application Filing
- 2018-02-22 TW TW107105867A patent/TW201834050A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2018163752A1 (ja) | 2018-09-13 |
TW201834050A (zh) | 2018-09-16 |
JP2018148042A (ja) | 2018-09-20 |
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