WO2015096367A1 - 有机电致发光显示器件、其制备方法及显示装置 - Google Patents

有机电致发光显示器件、其制备方法及显示装置 Download PDF

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WO2015096367A1
WO2015096367A1 PCT/CN2014/078107 CN2014078107W WO2015096367A1 WO 2015096367 A1 WO2015096367 A1 WO 2015096367A1 CN 2014078107 W CN2014078107 W CN 2014078107W WO 2015096367 A1 WO2015096367 A1 WO 2015096367A1
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active layer
layer
display device
organic electroluminescent
substrate
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French (fr)
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任章淳
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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Definitions

  • Embodiments of the present invention relate to the field of display technologies, and in particular, to an organic electroluminescent display. Piece, preparation method thereof and display device.
  • OLED Organic Electroluminese Display
  • LCD liquid crystal display
  • OLED devices generally include a thin film transistor array substrate and an organic electroluminescent structure;
  • the film transistor generally includes a gate electrode, an active layer, a source electrode, and a drain electrode, and the organic electroluminescent structure
  • the anode, the luminescent layer and the cathode are generally included.
  • the bottom emission type OLED device main body as shown in FIG. To include the substrate 1, the gate electrode 2, the gate insulating layer 3, the active layer 4, and the etching sequentially on the substrate 1.
  • the component formed by the figure includes at least: a gate electrode, an active layer, an etch barrier layer, a source electrode and a drain electrode, An insulating layer, a color filter, an anode, and a pixel defining layer.
  • a gate electrode an active layer
  • an etch barrier layer an etch barrier layer
  • a source electrode and a drain electrode an insulating layer
  • a color filter an anode
  • a pixel defining layer a pixel defining layer.
  • the color filter is generally Consisting of a monochromatic filter with three primary colors (red, green, blue) arranged in a cross, so in the production of color filters The film needs to be patterned separately using three masks.
  • embodiments of the present invention provide a Organic electroluminescent display device, preparation method thereof and display device thereof for simplifying preparation of OLED device Process, reducing production costs and reducing production time.
  • an organic electroluminescent display device comprising:
  • a thin film transistor on the substrate and including a gate electrode and an active layer insulated from each other, and a source electrode and a drain electrode electrically connected to the active layer;
  • An organic electroluminescent structure located on the substrate, and comprising an anode and a light layer stacked in sequence a layer and a cathode, the anode being electrically connected to the drain electrode,
  • the anode and the active layer are disposed in the same layer, and the active layer is made of a transparent oxide half Made of a conductor material, the anode is plasma-treated by the transparent oxide semiconductor Made of materials.
  • the active layer is transparent Made of an oxide semiconductor material
  • plasma treatment of the oxide semiconductor material can improve oxidation
  • the concentration of carriers in the semiconductor material so an oxide semiconductor material for preparing an active layer can be used.
  • the anode is prepared such that the anode and the active layer are disposed in the same layer. In this way, in the preparation of OLED devices When there is no need to add a new patterning process for preparing the anode, it is only necessary to change the composition of the corresponding mask.
  • the active layer and the anode can be simultaneously prepared, thereby simplifying the process steps, saving production costs, and improving Production efficiency and production time are shortened.
  • the active layer is located above the gate electrode; between the active layer and the gate electrode Provided with a gate insulating layer;
  • the source electrode and the drain electrode are both located above the active layer.
  • the gate electrode is located above the active layer; between the active layer and the gate electrode Provided with a gate insulating layer;
  • the source electrode and the drain electrode are both located between the active layer and the substrate.
  • the gate electrode is located above the active layer; between the active layer and the gate electrode Provided with a gate insulating layer;
  • the source electrode and the drain electrode are both located above the gate electrode, and the source electrode and the The drain electrode is connected to the active layer through a via.
  • the display device further includes: a color filter, the color filter is located in the organic Above the light-emitting structure or between the gate insulating layer and the organic electroluminescent structure.
  • the display device further includes: a color filter, the color filter is located in the organic Above the luminescent structure or under the organic electroluminescent structure.
  • the above organic electroluminescent display device is further included a metal reflective layer, the metal reflective layer being located in a region corresponding to the organic electroluminescent structure a domain, and the metal reflective layer is disposed in the same layer as the gate electrode and is made of the same material.
  • a display device comprising the above The organic electroluminescent display device provided by the various embodiments.
  • a method for preparing the present invention A method of any one of the organic electroluminescent display devices of the embodiment, comprising forming a thin film crystal on the substrate In the steps of the tube and the organic electroluminescent structure,
  • the formed anode is subjected to plasma treatment.
  • a method for preparing an organic electroluminescence display device The patterning process forms an active layer in the thin film transistor and an anode in the organic electroluminescent structure, without
  • the external patterning process for preparing the anode can be realized only by changing the composition of the corresponding mask to realize the active layer and Simultaneous preparation of the anode, which simplifies the process steps, saves production costs, and improves production efficiency. And shorten production time.
  • the step of forming a thin film transistor on the substrate comprises:
  • a gate electrode on the substrate, forming an active layer on the substrate on which the gate electrode is formed, in a shape a source electrode and a drain electrode are formed on the substrate on which the active layer is formed;
  • Forming a gate electrode on the substrate, and the organic electroluminescent structure on the substrate forms a metallic reflective layer. In this way, the preparation process can be further simplified, and the production cost can be saved. And improve production efficiency.
  • FIG. 1 is a schematic structural view of a conventional organic electroluminescence display device
  • FIG. 2a is a junction of an organic electroluminescent display device according to a first exemplary embodiment of the present invention.
  • FIG. 2b is a junction of an organic electroluminescent display device in accordance with a second exemplary embodiment of the present invention.
  • FIG. 2c is a junction of an organic electroluminescent display device according to a third exemplary embodiment of the present invention.
  • FIG. 3 is a structure of an organic electroluminescence display device according to a fourth exemplary embodiment of the present invention. Schematic;
  • 4a to 4i are schematic diagrams showing the process of preparing the organic electroluminescent display device shown in FIG. Figure.
  • each film layer in the drawings do not reflect the true proportion of the organic electroluminescent display device, and The partial structure of the organic electroluminescent display device is only for the purpose of illustrating the present invention.
  • numerous specific details are set forth A comprehensive understanding of the example. However, it will be apparent that one or more embodiments are in the absence of these specific details. It can also be implemented. In other instances, well-known structures and devices are shown in simplified form for simplicity. Drawing the drawings.
  • an organic electroluminescence according to various exemplary embodiments of the present invention
  • An optical display device taking a pixel unit in an organic electroluminescence display device as an example, including a substrate 01, And a thin film transistor and an organic electroluminescent structure on the substrate 01.
  • Thin film transistors include each other An insulated gate electrode 021 and an active layer 022, and a source electrode 023 electrically connected to the active layer 022 Leakage electrode 024.
  • the organic electroluminescent structure is included in a direction away from the substrate 01 (Fig. 2a to Fig. 2c and The anode 031, the light-emitting layer 032, and the cathode 033 are sequentially stacked in the upward direction in FIG.
  • the anode 031 is electrically connected to the drain electrode 024.
  • the anode 031 is disposed in the same layer as the active layer 022, and the active layer 022 Made of a transparent oxide semiconductor, the anode 031 is plasma treated by a transparent oxide semiconductor Made of materials.
  • the above organic electroluminescent device since the active layer is transparently oxidized Made of semiconductor materials, plasma treatment of oxide semiconductor materials can increase oxide half The concentration of carriers in the conductor material, so it is possible to prepare an anode by using an oxide semiconductor for preparing an active layer.
  • the pole thus sets the anode in the same layer as the active layer.
  • the external patterning process for preparing the anode can simultaneously prepare the active layer by changing the pattern of the corresponding mask.
  • anodes which simplifies process steps, saves production costs, increases production efficiency, and shortens production time between.
  • active The layer may be made of indium gallium zinc oxide (IGZO), zinc oxide (ZnO), indium zinc oxide (IZO) or indium tin Made of zinc oxide (ITZO).
  • IGZO indium gallium zinc oxide
  • ZnO zinc oxide
  • IZO indium zinc oxide
  • ITZO indium tin Made of zinc oxide
  • the active layer may also be other materials capable of implementing the solution of the present invention. It is made of materials and is not limited here.
  • FIG. 2a An organic electroluminescence display device according to a first exemplary embodiment of the present invention, as shown in FIG. 2a It is shown that the thin film transistor has a bottom gate type structure. More specifically, in the thin film transistor, the active layer 022 bit Above the gate electrode 021, the active layer 022 and the gate electrode 021 are mutually insulated by the gate insulating layer 06. The source electrode 023 and the drain electrode 024 are both located above the active layer 022. That is, the active layer 022 Located downstream of the gate electrode 021 in a direction away from the substrate 01, the source electrode 023 and the drain electrode 024 are The direction away from the substrate 01 is located downstream of the active layer 022.
  • the thin film transistor has a top gate type structure.
  • the gate electrode 021 may be located above the active layer 022, and in the active layer 022 and A gate insulating layer 06 is further disposed between the gate electrodes 021, that is, the gate electrode 021 is away from the substrate 01.
  • the upper side is located downstream of the active layer 022; the source electrode 023 and the drain electrode 024 may both be located on the active layer 022 and Between the substrates 01.
  • the gate electrode 021 may be located in the active layer Above the 022, and a gate insulating layer 06 is disposed between the active layer 022 and the gate electrode 021, that is, The edge gate electrode 021 is located downstream of the active layer 022 in a direction away from the substrate 01; the source electrode 023 and The drain electrode 024 may be located above the gate electrode 021, and the source electrode 023 and the drain electrode 024 pass through The via holes formed in the gate insulating layer 06 are connected to the active layer 022.
  • the organic electro The luminescent layer 032 in the illuminating structure can emit light of three primary colors (red, blue, and green), or more The light of the color.
  • the color filter can be omitted in the organic electroluminescence display device.
  • the luminescent layer 032 in the organic electroluminescent structure can also emit white light, which is not limited herein.
  • the display device in the organic electroluminescent structure
  • the display device should also include color filtering. Slice 04.
  • the color filter 04 when the thin film transistor has a bottom gate type structure, the color filter 04 is away from the substrate 01. The direction is upstream of the organic electroluminescent structure. As shown in Figure 2a, the color filter 04 can be located Between the gate insulating layer 06 and the organic electroluminescent structure, in this case, the light is emitted from the organic electroluminescence The lower portion of the display device is ejected. In an alternative embodiment, the color filter 04 can also be located in an organic Above the electroluminescent structure, there is no limitation here, in which case the light is displayed from the organic electroluminescence The upper part of the device is fired.
  • color filter The sheet 04 is located upstream of the organic electroluminescent structure in a direction away from the substrate 01. As shown in Figure 2b and Figure 2c It is shown that the color filter 04 is located under the organic electroluminescent structure, in which case the light is from the organic electricity The lower portion of the light-emitting display device is emitted. In an alternative embodiment, the color filter 04 can also be in place. Above the organic electroluminescent structure, there is no limitation here, in which case the light is emitted from the organic electroluminescence The upper portion of the display device is ejected.
  • color filter 04 as shown in Figures 2a to 2c They are all disposed under the organic electroluminescent structure, and the OLED devices are all set to the bottom emission type, The medium light is emitted from the lower portion of the organic electroluminescence display device.
  • the light-emitting side of the OLED device can also be changed by providing a metal reflective layer, thereby The OLED device is provided in a top emission type in which light is emitted from an upper portion of the organic electroluminescence display device.
  • the above organic electroluminescence display device of the embodiment is as shown in FIG. 3 when a bottom gate type thin film transistor is used.
  • the method further includes: a metal reflective layer 05 on which the metal reflective layer 05 is located and the organic electroluminescence a region corresponding to the light structure, and the metal reflective layer 05 and the gate electrode 021 are disposed on the same layer and are identical Made of materials.
  • the metal reflective layer 05 and the gate electrode 021 can be formed in the same layer. In order to do this, it is not necessary to add another preparation process, and it is only necessary to change the composition of the corresponding mask. Now, the process steps are simplified, the production cost is saved, and the production efficiency is improved.
  • the side opposite to the color filter 04 is the light exit side of the OLED device.
  • metal reflection Both the layer 05 and the color filter 04 are disposed under the organic electroluminescent structure, and the OLED device is disposed It is a top emission type in which light is emitted from the upper portion of the organic electroluminescence display device.
  • the light emitting layer Part of the light emitted by 032 does not pass through the color filter directly from the light exit side of the OLED device ( Figure 3
  • the upper side of the middle is shot; the part passes through the color filter 05 and is reflected by the metal reflective layer 05.
  • the color filter 05 After passing through the color filter 05 again, it is emitted from the light-emitting side of the display device, and the specific optical path is as shown in FIG. The head is shown. However, in this case, since a part of the light of the light-emitting layer 032 does not pass through the color filter. The filtering effect is directly emitted from the light emitting side of the OLED device, thus affecting the OLED device. Color purity.
  • the thin film transistor 02 When the thin film transistor 02 is of a bottom gate type structure, the thin film transistor 02 may further include a source electrode. An etch barrier layer 025 between the 023 and the active layer 022.
  • the light emitting layer may be To include a hole injection layer, a hole transport layer, an organic light-emitting layer, and an electric layer respectively formed of different organic materials
  • a film layer such as a sub-transport layer or an electron injecting layer, in particular, a light-emitting layer structure belongs to the prior art, and is no longer defective here. Said.
  • An embodiment according to a further aspect of the present invention also provides a display device comprising the present invention
  • the organic electroluminescent display device of various embodiments is described.
  • the display device can be: mobile phone, tablet battery Brain, TV, monitor, laptop, digital photo frame, navigator, etc. have any display function Product or part.
  • Other essential components for the display device are those in the art. It should be understood by those skilled in the art that they are not described herein, nor should they be construed as limiting the invention.
  • the for the implementation of the display device reference may be made to the embodiment of the above organic electroluminescent display device, and the repetition is no longer repeated. Narration.
  • Embodiments according to still further aspects of the present invention also provide for the preparation of any of the above organic electroluminescence A method of optical display device, forming a step comprising a thin film transistor and an organic electroluminescent structure on a substrate suddenly
  • the formed anode is plasma treated to increase the concentration of carriers in the anode.
  • a method for preparing an organic electroluminescence display device The patterning process forms a pattern of an active layer of the thin film transistor and an anode of the organic electroluminescent structure, thus There is no need to add another patterning process for preparing the anode, and it is only necessary to change the composition of the corresponding mask. Simultaneous preparation of existing source layers and anodes, thereby simplifying process steps, saving production costs, and improving Production efficiency and reduced production time.
  • a pattern including a thin film transistor is formed on a substrate
  • the steps include:
  • the organic electroluminescence display device shown in FIG. 3 is taken as an example for the above organic electroluminescence. A method of preparing a display device will be described.
  • the method of preparing the organic electroluminescence display device shown in FIG. 3 includes the following steps:
  • the anode is quarantined Sub-body treatment to increase the density of carriers in the anode;
  • a cathode 033 is deposited on the light-emitting layer 032 as shown in Fig. 4i.
  • An organic electroluminescent display device In the above steps, the anode and the active layer are purchased once. Process formation, metal reflective layer and gate electrode are formed by one patterning process to prepare anode and active The layer, the metal reflective layer, and the gate electrode use a total of two masks (Mask) for patterning.
  • Mosk masks
  • an anode, an active layer, a metal reflective layer, and The pattern of the gate electrode requires four mask patterning processes. Therefore, the preparation method of the embodiment of the present invention Compared with the existing preparation method, the preparation process can be simplified, the cost is high, and the production time is shortened.
  • the patterning process may include only a photolithography process, or may include a photolithography process and an etcher Further, other processes for forming a predetermined pattern, such as printing, inkjet, and the like, may also be included.
  • a photolithography process refers to the use of a photoresist, a mask, a process including film formation, exposure, and development.
  • the knot formed in accordance with the present invention The structure selects the corresponding composition process.
  • an organic electroluminescence display device includes a substrate, and a thin film transistor and an organic electroluminescent junction on the substrate
  • the thin film transistor includes a gate electrode and an active layer insulated from each other, and is electrically separated from the active layer a source electrode and a drain electrode;
  • the organic electroluminescent structure is included in a direction away from the substrate
  • the anode, the light-emitting layer and the cathode are sequentially stacked, and the anode and the drain electrode are electrically connected; the anode and the active
  • the layers are arranged in the same layer, the active layer is made of a transparent oxide semiconductor material, and the anode is made of the transparent oxide half.
  • the conductor is made of a plasma treated material.
  • the active layer is transparent Made of a bright oxide semiconductor material, plasma treatment of the oxide semiconductor material can increase oxygen The concentration of carriers in the semiconductor material, so an oxide semiconductor material for preparing an active layer can be used.
  • the anode is prepared to set the anode and the active layer in the same layer. In this way, in the preparation of OLED devices When there is no need to add another patterning process for preparing the anode, it is only necessary to change the composition of the corresponding mask. Simultaneous preparation of the active layer and the anode can be achieved, thereby simplifying the process steps and saving production costs. High production efficiency and reduced production time.

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Abstract

一种有机电致发光显示器件、制备方法及显示装置。有机电致发光显示器件，包括：基板（01）；薄膜晶体管，位于基板（01）上，并包括相互绝缘的栅电极（021）和有源层（022）、以及与有源层（022）电性连接的源电极（023）和漏电极（024）；以及有机电致发光结构，位于基板（01）上，并包括依次层叠设置的阳极（031）、发光层（032）和阴极（033），阳极（031）与漏电极（024）电性连接。阳极（031）与有源层（022）设置在同一层，有源层（022）由透明氧化物半导体材料制成，阳极（031）由该透明氧化物半导体经过等离子体处理后的材料制成。在制备OLED器件时，不需要增加另外的制备阳极的构图工艺，仅需变更对应的膜层的构图即可实现有源层（022）和阳极（031）同时制备，从而可以简化工艺步骤，节省生产成本。

Description

有机电致发光显示器件、其制备方法及显示装置 技术领域
本发明的实施例涉及显示技术领域，尤其涉及一种有机电致发光显示器 件、其制备方法及显示装置。
背景技术
目前，有机电致发光显示器件(Organic Electroluminesecent Display，OLED) 与传统的液晶显示器件(Liquid Crystal Display，LCD)相比，由于具有响应快、 色域广、超薄、能实现柔性化等特点，已广泛应用于显示装置中。
OLED器件一般包括薄膜晶体管阵列基板和有机电致发光结构；其中，薄 膜晶体管一般包括栅电极、有源层、源电极以及漏电极，有机电致发光结构一 般包括阳极、发光层和阴极。具体地，如图1所示的底发射型的OLED器件主 要包括基板1，依次位于基板1上的栅电极2、栅极绝缘层3、有源层4、刻蚀 阻挡层5、源电极6、漏电极7、绝缘层8、彩色滤光片9、阳极10、像素界定 层1l、发光层12以及阴极13。
在制作具有上述结构的OLED器件时，需要使用掩膜板(Mask)进行构 图而形成的部件至少包括：栅电极、有源层、刻蚀阻挡层、源电极和漏电极、 绝缘层，彩色滤光片、阳极、以及像素界定层。其中，由于彩色滤光片一般是 由三原色(红，绿，蓝)交叉排列的单色滤光片组成的，因此在制作彩色滤光 片时需要分别使用3道掩模板进行构图。
综上，在制作现有的OLED器件时，需要使用多道掩模板进行构图。因此， 现有OLED器件的制作过程存在制备工艺复杂，制造流程繁多，成本高，耗时 长等问题。
发明内容
为克服现有技术中的上述和其它方面的缺陷，本发明的实施例提供了一种 有机电致发光显示器件、其制备方法及显示装置，用以简化OLED器件的制备 工艺，降低制作成本和缩短生产时间。
根据本发明一个方面的实施例，提供一种有机电致发光显示器件，包括：
基板；
薄膜晶体管，位于所述基板上，并包括相互绝缘的栅电极和有源层、以及 与所述有源层电性连接的源电极和漏电极；以及
有机电致发光结构，位于所述基板上，并包括依次层叠设置的阳极、发光 层和阴极，所述阳极与所述漏电极电性连接，
其中，所述阳极与所述有源层设置在同一层，所述有源层由透明氧化物半 导体材料制成，所述阳极由所述透明氧化物半导体经过等离子体处理后的材 料制成。
根据本发明上述实施例的上述有机电致发光器件，由于有源层采用透明 氧化物半导体材料制成，对氧化物半导体材料进行等离子体处理可以提高氧化 物半导体材料中载流子的浓度，因此可以采用制备有源层的氧化物半导体材料 来制备阳极，从而将阳极与有源层设置在同一层中。这样，在制备OLED器件 时，就不需要增加新的制备阳极的构图工艺，仅需变更对应的掩模板的构图即 可实现有源层和阳极同时制备，从而可以简化工艺步骤，节省生产成本，提高 生产效率，缩短生产时间。
在上述有机电致发光显示器件中，在所述薄膜晶体管中，
所述有源层位于所述栅电极的上方；在所述有源层和所述栅电极之间还 设置有栅极绝缘层；
所述源电极和所述漏电极均位于所述有源层的上方。
在上述有机电致发光显示器件中，在所述薄膜晶体管中，
所述栅电极位于所述有源层的上方；在所述有源层和所述栅电极之间还 设置有栅极绝缘层；
所述源电极和所述漏电极均位于所述有源层与所述基板之间。
在上述有机电致发光显示器件中，在所述薄膜晶体管中，
所述栅电极位于所述有源层的上方；在所述有源层和所述栅电极之间还 设置有栅极绝缘层；
所述源电极和所述漏电极均位于所述栅电极的上方，且所述源电极和所 述漏电极通过过孔与所述有源层连接。
在上述有机电致发光显示器件中，所述有机电致发光结构中的发光层发 白光，所述显示器件还包括：彩色滤光片，所述彩色滤光片位于所述有机电 致发光结构的上方，或位于所述栅极绝缘层与所述有机电致发光结构之间。
在上述有机电致发光显示器件中，所述有机电致发光结构中的发光层发 白光，所述显示器件还包括：彩色滤光片，所述彩色滤光片位于所述有机电 致发光结构之上，或位于所述有机电致发光结构之下。
为了节省生产成本和提高生产效率，上述有机电致发光显示器件还包 括：金属反射层，所述金属反射层位于与所述有机电致发光结构对应的区 域，且所述金属反射层与所述栅电极设置在同一层并由相同的材料制成。
根据本发明进一步方面的实施例，还提供一种显示装置，包括本发明的上 述各种实施例所提供的有机电致发光显示器件。
根据本发明更进一步方面的实施例，还提供了一种用于制备本发明的上述 实施例的任一种有机电致发光显示器件的方法，在基板上形成包括薄膜晶体 管和有机电致发光结构的步骤中，
采用一次构图工艺形成所述薄膜晶体管的有源层和所述有机电致发光结 构中的阳极；以及
对形成的所述阳极进行等离子体处理。
根据本发明实施例的有机电致发光显示器件的制备方法，由于采用一次 构图工艺形成薄膜晶体管中的有源层和有机电致发光结构中的阳极，不用另 外的制备阳极的构图工艺，仅需变更对应的掩模板的构图即可实现有源层和 阳极同时制备，从而可以简化工艺步骤，节省生产成本，提高生产效率，以 及缩短生产时间。
上述制备方法中，所述在基板上形成包括薄膜晶体管的步骤包括：
在基板上形成栅电极，在形成有所述栅电极的基板上形成有源层，在形 成有所述有源层的基板上形成源电极和漏电极；其中，
在基板上形成栅电极的同时，在所述基板上与所述有机电致发光结构对 应的区域形成金属反射层。这样，可以进一步地简化制备工艺，节省生产成本 和提高生产效率。
附图说明
图1为现有的有机电致发光显示器件的结构示意图；
图2a为根据本发明的第一种示例性实施例的有机电致发光显示器件的结 构示意图；
图2b为根据本发明的第二种示例性实施例的有机电致发光显示器件的结 构示意图；
图2c为根据本发明的第三种示例性实施例的有机电致发光显示器件的结 构示意图；
图3为根据本发明的第四种示例性实施例的有机电致发光显示器件的结构 示意图；以及
图4a至图4i为制备图3所示的有机电致发光显示器件的工艺过程示意 图。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体 实施方式对本发明作进一步详细描述。显然，所描述的实施例仅仅是本发明一 部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术 人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保 护的范围。
附图中各膜层的形状和大小不反映有机电致发光显示器件的真实比例，且 仅为有机电致发光显示器件的局部结构，目的只是示意说明本发明内容。另外， 在下面的详细描述中，为便于解释，阐述了许多具体的细节以提供对本披露实 施例的全面理解。然而明显地，一个或多个实施例在没有这些具体细节的情况 下也可以被实施。在其他情况下，公知的结构和装置以图示的方式体现以简 化附图。
如图2a至图2c所示，根据本发明的各种示例性实施例的一种有机电致发 光显示器件，以有机电致发光显示器件中的一个像素单元为例，包括基板01、 以及位于基板01上的薄膜晶体管和有机电致发光结构。薄膜晶体管包括相互 绝缘的栅电极021和有源层022、以及与有源层022电性连接的源电极023和 漏电极024。有机电致发光结构包括在远离基板01的方向上(图2a至图2c和 图3中向上的方向)依次层叠设置的阳极031、发光层032和阴极033，阳极 031与漏电极024电性连接。阳极031与有源层022设置在同一层，有源层022 由透明氧化物半导体制成，阳极031由透明氧化物半导体经过等离子体处理后 的材料制成。
根据本发明的实施例的上述有机电致发光器件，由于有源层由透明氧化 物半导体材料制成，对氧化物半导体材料进行等离子体处理可以提高氧化物半 导体材料中载流子的浓度，因此可以采用制备有源层的氧化物半导体来制备阳 极，从而将阳极与有源层同层设置。这样，在制备OLED器件时，就不需要另 外的制备阳极的构图工艺，仅需变更对应的掩模板的构图即可同时制备有源层 和阳极，从而可以简化工艺步骤，节省生产成本，提高生产效率，缩短生产时 间。
在本发明的进一步示例性实施例的上述有机电致发光显示器件中，有源 层可以由铟镓锌氧化物(IGZO)、氧化锌(ZnO)、铟锌氧化物(IZO)或铟锡 锌氧化物(ITZO)制成。当然，有源层也可以为能够实现本发明方案的其他材 料制成，在此不做限定。
根据本发明的第一种示例性实施例的有机电致发光显示器件，如图2a所 示，薄膜晶体管具有底栅型结构。更具体地，在薄膜晶体管中，有源层022位 于栅电极021的上方，在有源层022和栅电极021通过栅极绝缘层06相互绝 缘；源电极023和漏电极024均位于有源层022的上方。也就是说，有源层022 在远离基板01的方向上位于栅电极021的下游，源电极023和漏电极024在 远离基板01的方向上均位于有源层022的下游。
根据本发明的第二种和第三种示例性实施例的有机电致发光显示器件， 如图2b和图2c所示，薄膜晶体管具有顶栅型结构。具体地，在如图2c所示 的薄膜晶体管中，栅电极021可以位于有源层022的上方，且在有源层022和 栅电极021之间还设置有栅极绝缘层06，即栅电极021在远离基板01的方向 上位于有源层022的下游；源电极023和漏电极024可以均位于有源层022与 基板01之间。在如图2b所示的薄膜晶体管中，栅电极021可以位于有源层 022的上方，且在有源层022和栅电极021之间还设置有栅极绝缘层06，即绝 缘栅电极021在远离基板01的方向上位于有源层022的下游；源电极023和 漏电极024可以均位于栅电极021的上方，且源电极023和漏电极024通过形 成在栅极绝缘层06中的过孔与有源层022连接。
进一步地，在本发明实施例的上述有机电致发光显示器件中，有机电致 发光结构中的发光层032可以发三原色(红色、蓝色和绿色)的光，或者更多 颜色的光。这种情况下，有机电致发光显示器件中可以省去彩色滤光片。当 然，有机电致发光结构中的发光层032也可以发白光，在此不做限定。
在本发明实施例的上述有机电致发光显示器件中，有机电致发光结构中 的发光层032发白光时，如图2a至图2c所示，该显示器件还应包括彩色滤光 片04。
具体地，当薄膜晶体管具有底栅型结构时，彩色滤光片04远离基板01的 方向上位于有机电致发光结构的上游。如图2a所示，彩色滤光片04可以位于 栅极绝缘层06与有机电致发光结构之间，在此情况下，光线从有机电致发光 显示器件的下部射出。在可替换的实施例中，彩色滤光片04也可以位于有机 电致发光结构的上方，在此不做限定，在此情况下，光线从有机电致发光显示 器件的上部射出。
在另一种示例性实施例中，当薄膜晶体管具有顶栅型结构时，彩色滤光 片04远离基板01的方向上位于有机电致发光结构的上游。如图2b和图2c所 示，彩色滤光片04位于有机电致发光结构之下，在此情况下，光线从有机电 致发光显示器件的下部射出。在可替换的实施例中，彩色滤光片04也可以位 于有机电致发光结构之上，在此不做限定，在此情况下，光线从有机电致发光 显示器件的上部射出。
具体地，在本发明实施例的上述有机电致发光显示器件中，一般设置彩 色滤光片的一侧为OLED器件的出光侧。如图2a至图2c所示，彩色滤光片04 都是设置于有机电致发光结构的下方，此时OLED器件都设置为底发射型，其 中光线从有机电致发光显示器件的下部射出。在可替换的实施例中，在OLED 器件中，也可以通过设置金属反射层来改变OLED器件的出光侧，从而将 OLED器件设置为顶发射型，其中光线从有机电致发光显示器件的上部射出。
在一种示例性实施例中，为了使发光层两侧所发出光的光都可以从OLED 器件的出光侧射出，以提高OLED器件的亮度，根据本发明第三种示例性实 施例的上述有机电致发光显示器件，在采用底栅型的薄膜晶体管时，如图3所 示，还包括：金属反射层05，金属反射层05在基板01上位于与该有机电致发 光结构对应的区域，且金属反射层05与栅电极021设置在同一层并由相同的 材料制成。这样在制备时，可以将金属反射层05与栅电极021在同一层制 备，这样不用增加另外的制备工艺，仅需变更对应的掩模板的构图即可实 现，简化了工艺步骤，节省了生产成本，提高了生产效率。
当金属反射层05与彩色滤光片04均位于有机电致发光结构的同一侧时， 与彩色滤光片04相对的一侧为OLED器件的出光侧。如图3所示，金属反射 层05与彩色滤光片04均设置于有机电致发光结构的下方，该OLED器件设置 为顶发射型，其中光线从有机电致发光显示器件的上部射出。具体地，发光层 032所发出的光，一部分不经过彩色滤光片直接从OLED器件的出光侧(图3 中的上侧)射出；一部分先经过彩色滤光片05，再经金属反射层05反射，然 后再次经过彩色滤光片05之后从显示器件的出光侧射出，具体光路如图3箭 头所示。但是这种情况，由于发光层032的光有一部分没有经过彩色滤光片的 滤光作用，就直接从OLED器件的出光侧射出了，因此会影响OLED器件的 色纯度。
在本发明实施例的上述有机电致发光显示器件中，如图2a和图3所示， 当薄膜晶体管02为底栅型结构时，在薄膜晶体管02中还可以包括位于源电极 023与有源层022之间的刻蚀阻挡层025。
进一步地，在本发明实施例的上述有机电致发光显示器件中，发光层可 以包含分别由不同有机材料形成的空穴注入层、空穴传输层、有机发光层、电 子传输层、电子注入层等膜层，具体地发光层结构属于现有技术，在此不再赘 述。
根据本发明进一步方面的实施例还提供了一种显示装置，包括本发明上 述各种实施例的有机电致发光显示器件。该显示装置可以为：手机、平板电 脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能 的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普 通技术人员应该理解具有的，在此不做赘述，也不应作为对本发明的限制。该 显示装置的实施可以参见上述有机电致发光显示器件的实施例，重复之处不再 赘述。
根据本发明更进一步方面的实施例还提供了制备上述任一种有机电致发 光显示器件的方法，在基板上形成包括薄膜晶体管和有机电致发光结构的步 骤中；
采用一次构图工艺形成薄膜晶体管的有源层和有机电致发光结构的阳 极：以及
对形成的阳极进行等离子体处理，以提高阳极中载流子的浓度。
根据本发明实施例的有机电致发光显示器件的制备方法，由于采用一次 构图工艺形成薄膜晶体管的有源层和有机电致发光结构的阳极的图形，因此 不用增加另外的制备阳极的构图工艺，仅需变更对应的掩模板的构图即可实 现有源层和阳极的同时制备，从而可以简化工艺步骤，节省生产成本，提高 生产效率，以及缩短生产时间。
进一步地，在上述制备方法中，在基板上形成包括薄膜晶体管的图形的 步骤包括：
在基板上形成栅电极，在形成有栅电极的基板上形成有源层，在形成有 有源层的基板上形成源电极和漏电极；
在基板上形成薄膜晶体管的栅电极的同时，在基板上与该有机电致发光 结构对应的区域形成金属反射层。这样，可以进一步地简化制备工艺，节省生 产成本。
下面以制备图3所示的有机电致发光显示器件为例，对上述有机电致发光 显示器件的制备方法进行说明。
具体地，制备图3所示的有机电致发光显示器件的方法包括以下步骤：
(1)通过一次构图工艺在在基板01上形成栅电极021和金属反射层05 的图形，如图4a所示；
(2)在栅电极021和金属反射层05上沉积栅极绝缘层06，如图4b所示；
(3)在栅极绝缘层06上形成彩色滤光片04的图形，如图4c所示；
(4)通过一次构图工艺在彩色滤光片04上形成有源层022和阳极031的 图形，如图4d所示；
(5)在有源层022上形成刻蚀阻挡层025的图形，如图4e所示；
在具体制备过程中，在形成刻蚀阻挡层025的图形之后，对阳极进行等离 子体处理，以提高阳极中载流子的密度；
(6)通过一次构图工艺在刻蚀阻挡层025上形成源电极023和漏电极024 的图形，如图4f所示；
(7)在源电极023和漏电极024上形成像素界定层07的图形，如图4g 所示；
(8)在阳极031上形成发光层032，如图4h所示；
(9)在发光层032上沉积阴极033，如图4i所示。
这样，经过上述步骤(1)至(9)之后，得到图3所示的本发明实施 例的有机电致发光显示器件。在上述步骤中，阳极与有源层通过一次购图 工艺形成，金属反射层与栅电极通过一次构图工艺形成，制备阳极、有源 层、金属反射层以及栅电极总共使用了2道掩模板(Mask)进行构图.而在 现有的OLED器件的制备方法中，形成阳极、有源层、金属反射层以及 栅电极的图形需要4道掩模板构图工艺。因此，本发明实施例的制备方法与 现有的制备方法相比，可以简化制备工艺，节省成本高，以及缩短生产时间。
需要说明的是，在本发明实施例的上述有机电致发光显示器件的制备 方法中，构图工艺可以只包括光刻工艺，或，可以包括光刻工艺以及刻蚀工 艺，进一步地，还可以包括打印、喷墨等其他用于形成预定图形的工艺。一 般地，光刻工艺是指包括成膜、曝光、显影等工艺过程中利用光刻胶、掩模 板、曝光机等形成图形的工艺。在具体实施时，可根据本发明中所形成的结 构选择相应的构图工艺。
根据本发明实施例，提供一种有机电致发光显示器件、其制备方法及显示 装置。该显示器件包括基板，以及位于基板上的薄膜晶体管和有机电致发光结 构；其中，薄膜晶体管包括相互绝缘的栅电极和有源层、以及与有源层分别电 性连接的源电极和漏电极；有机电致发光结构包括在远离所述基板的方向上 依次层叠设置的阳极、发光层和阴极，阳极与漏电极电性连接；阳极与有源 层同层设置，有源层由透明氧化物半导体材料制成，阳极由该透明氧化物半 导体经过等离子体处理后的材料制成。由于在该OLED器件中，有源层采用透 明氧化物半导体材料制成，对氧化物半导体材料进行等离子体处理可以提高氧 化物半导体材料中载流子的浓度，因此可以采用制备有源层的氧化物半导体材 料来制备阳极，从而将阳极与有源层设置在同一层。这样，在制备OLED器件 时，就不需要增加另外的制备阳极的构图工艺，仅需变更对应的掩模板的构图 即可实现有源层和阳极同时制备，从而可以简化工艺步骤，节省生产成本，提 高生产效率，缩短生产时间。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发 明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及 其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (10)

  1. 一种有机电致发光显示器件，包括：
    基板；
    薄膜晶体管，位于所述基板上，并包括相互绝缘的栅电极和有源层、以及 与所述有源层电性连接的源电极和漏电极；以及
    有机电致发光结构，位于所述基板上，并包括依次层叠设置的阳极、发光 层和阴极，所述阳极与所述漏电极电性连接，
    其中，所述阳极与所述有源层设置在同一层，所述有源层由透明氧化物半 导体材料制成，所述阳极由所述透明氧化物半导体经过等离子体处理后的材 料制成。
  2. 如权利要求1所述的有机电致发光显示器件，其中，在所述薄膜晶体 管中，
    所述有源层位于所述栅电极的上方；在所述有源层和所述栅电极之间还 设置有栅极绝缘层；
    所述源电极和所述漏电极均位于所述有源层的上方。
  3. 如权利要求1所述的有机电致发光显示器件，其中，在所述薄膜晶体 管中，
    所述栅电极位于所述有源层的上方；在所述有源层和所述栅电极之间还 设置有栅极绝缘层；
    所述源电极和所述漏电极均位于所述有源层与所述基板之间。
  4. 如权利要求1所述的有机电致发光显示器件，其中，在所述薄膜晶体 管中，
    所述栅电极位于所述有源层的上方；在所述有源层和所述栅电极之间还 设置有栅极绝缘层；
    所述源电极和所述漏电极均位于所述栅电极的上方，且所述源电极和所 述漏电极通过过孔与所述有源层连接。
  5. 如权利要求2所述的有机电致发光显示器件，其中，所述有机电致发 光结构中的发光层发白光，所述显示器件还包括：彩色滤光片，所述彩色滤 光片位于所述有机电致发光结构的上方，或位于所述栅极绝缘层与所述有机 电致发光结构之间。
  6. 如权利要求3或4所述的有机电致发光显示器件，其特征在于，所述 有机电致发光结构中的发光层发白光，所述显示器件还包括：彩色滤光片， 所述彩色滤光片位于所述有机电致发光结构之上，或位于所述有机电致发光 结构之下。
  7. 如权利要求2或5所述的有机电致发光显示器件，还包括：金属反射 层，所述金属反射层位于与所述有机电致发光结构对应的区域，且所述金属 反射层与所述栅电极设置在同一层并由相同的材料制成。
  8. 一种显示装置，包括如权利要求1-7任一项所述的有机电致发光显示 器件。
  9. 一种用于制备如权利要求1-7任一项所述有机电致发光显示器件的方 法，在基板上形成包括薄膜晶体管和有机电致发光结构的步骤中，
    采用一次构图工艺形成所述薄膜晶体管的有源层和所述有机电致发光结 构中的阳极；以及
    对形成的所述阳极进行等离子体处理。
  10. 如权利要求9所述的制备方法，其中，所述在基板上形成包括薄膜晶 体管的步骤包括：
    在基板上形成栅电极，在形成有所述栅电极的基板上形成有源层，在形 成有所述有源层的基板上形成源电极和漏电极；其中，
    在基板上形成栅电极的同时，在所述基板上与所述有机电致发光结构对 应的区域形成金属反射层。
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CN1705415A (zh) * 2004-05-26 2005-12-07 统宝光电股份有限公司 有机电激发光显示器及其制作方法
CN102651455A (zh) * 2012-02-28 2012-08-29 京东方科技集团股份有限公司 Oled器件、amoled器件及其制造方法
CN103681773A (zh) * 2013-12-27 2014-03-26 京东方科技集团股份有限公司 一种有机电致发光显示器件、其制备方法及显示装置

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